Tunnel junction vertical cavity surface emitting laser structure and forming method thereof

Abstract

The invention provides a tunnel junction type vertical cavity surface emitting laser structure and a forming method thereof, the tunnel junction type vertical cavity surface emitting laser structure comprises a substrate on which a first distributed Bragg reflector layer, an active layer and an etching stop layer which are sequentially stacked from bottom to top are formed, and the etching stop layer contains arsenic element; the first tunnel junction layer is formed on the etching stop layer and exposes part of the top surface of the etching stop layer, the second tunnel junction layer is formed on the first tunnel junction layer, and the second tunnel junction layer contains phosphorus; the second distributed Bragg reflector layer covers the second tunnel junction layer and extends to cover the exposed top surface of the etch stop layer. Because the second tunnel junction layer contains phosphorus, the light absorption of the second tunnel junction layer to the working wavelength can be reduced, thereby improving the output power of the device and reducing the threshold current. In addition, since the etching stop layer contains the arsenic element, the film layer quality of the second distributed Bragg reflector layer can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a tunnel junction vertical cavity surface-emitting laser structure and its formation method. Background Technology

[0002] In current vertical-cavity surface-emitting lasers (VCSELs), traditional oxide-confined VCSELs have certain limitations. For example, the formation of the oxide spacer layer introduces stress and leads to severe current congestion, affecting the lifespan and output performance of the VCSEL. Furthermore, the low thermal conductivity and high thermal resistance of the oxide spacer layer limit heat transfer efficiency. This causes premature thermal flip-flop current, thus reducing the laser's peak power. Compared to oxide-confined VCSELs, Li-VCSELs (all-epitaxial andoxide-free lithographically defined VCSELs) exhibit better heat dissipation, device performance, and reliability. Summary of the Invention

[0003] The purpose of this invention is to provide a tunnel junction vertical cavity surface emitter laser structure and its formation method, so as to improve output power and reduce threshold current.

[0004] To achieve the above objectives, the present invention provides a tunnel-junction vertical-cavity surface-emitting laser structure, comprising:

[0005] A substrate on which a first distributed Bragg mirror layer, an active layer and an etch stop layer are formed in a stacked manner from bottom to top, wherein the etch stop layer contains arsenic.

[0006] A first tunneling layer and a second tunneling layer, wherein the first tunneling layer is formed on the etch stop layer and exposes a portion of the top surface of the etch stop layer, and the second tunneling layer is formed on the first tunneling layer and contains phosphorus.

[0007] A second distributed Bragg reflector layer covers the second tunnel junction layer and extends to cover the top surface of the exposed etch stop layer.

[0008] Optionally, in the tunnel junction vertical cavity surface-emitting laser structure, the material of the first tunnel junction layer is P-type aluminum gallium arsenide, and the material of the second tunnel junction layer is N-type gallium arsenide phosphide.

[0009] Optionally, in the tunnel junction vertical cavity surface-emitting laser structure, the material of the etching stop layer is indium gallium arsenide phosphide.

[0010] Optionally, in the tunnel junction vertical cavity surface emission laser structure, the tunnel junction vertical cavity surface emission laser structure further includes an N-type spacer layer and a P-type spacer layer, the N-type spacer layer being located between the active layer and the first distributed Bragg mirror layer, and the P-type spacer layer being located between the active layer and the etch stop layer.

[0011] Optionally, in the tunnel junction vertical cavity surface-emitting laser structure, both the N-type spacer layer and the P-type spacer layer are made of aluminum gallium arsenide.

[0012] Based on the same inventive concept, the present invention also provides a method for forming a tunnel-type vertical cavity surface-emitting laser structure, comprising:

[0013] A substrate is provided on which a first distributed Bragg mirror layer, an active layer and an etch stop layer are formed in a bottom-to-top stacked manner, wherein the etch stop layer contains arsenic.

[0014] A first tunnel junction layer and a second tunnel junction layer are formed. The first tunnel junction layer is formed on the etch stop layer and exposes part of the top surface of the etch stop layer. The second tunnel junction layer is formed on the first tunnel junction layer and contains phosphorus.

[0015] A second distributed Bragg reflector layer is formed, which covers the second tunnel junction layer and extends to cover the top surface of the exposed etch stop layer.

[0016] Optionally, in the method for forming the tunnel junction type vertical cavity surface-emitting laser structure, the method for forming the first tunnel junction layer and the second tunnel junction layer includes:

[0017] A first tunnel junction material layer and a second tunnel junction material layer are sequentially formed on the etching stop layer, wherein the first tunnel junction material layer covers the etching stop layer and the second tunnel junction material layer covers the first tunnel junction material layer;

[0018] The second tunnel junction material layer and the first tunnel junction material layer are sequentially etched using a wet etching process to form the second tunnel junction layer and the first tunnel junction layer.

[0019] Optionally, in the method for forming the tunnel junction vertical cavity surface-emitting laser structure, the material of the first tunnel junction layer is P-type aluminum gallium arsenide, and the material of the second tunnel junction layer is N-type gallium arsenide phosphide.

[0020] Optionally, in the method for forming the tunnel junction vertical cavity surface-emitting laser structure, the material of the etching stop layer is indium gallium arsenide phosphide.

[0021] Optionally, in the method for forming the tunnel junction type vertical cavity surface-emitting laser structure, before forming the first tunnel junction layer, the method further includes:

[0022] An N-type spacer layer and a P-type spacer layer are formed, wherein the N-type spacer layer is located between the active layer and the first distributed Bragg mirror layer, and the P-type spacer layer is located between the active layer and the etch stop layer.

[0023] In the tunnel junction vertical-cavity surface-emitting laser (VCSEL) structure and its formation method provided by this invention, the VCSEL structure includes: a substrate on which a first distributed Bragg mirror layer, an active layer, and an etch stop layer are formed, stacked sequentially from bottom to top, wherein the etch stop layer contains arsenic; a first tunnel junction layer and a second tunnel junction layer, wherein the first tunnel junction layer is formed on the etch stop layer and exposes part of the top surface of the etch stop layer, and the second tunnel junction layer is formed on the first tunnel junction layer and contains phosphorus; and a second distributed Bragg mirror layer, covering the second tunnel junction layer and extending to cover the exposed top surface of the etch stop layer. Because the second tunnel junction layer contains phosphorus, the absorption of light at the operating wavelength by the second tunnel junction layer can be reduced, thereby increasing the output power of the device and reducing the threshold current. Furthermore, the presence of arsenic in the etch stop layer is beneficial for improving the film quality of the second distributed Bragg mirror layer formed on its surface, thereby facilitating lattice matching. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the tunnel-type vertical cavity surface-emitting laser structure provided in an embodiment of the present invention.

[0025] Figure 2 This is a schematic flowchart of the method for forming a tunnel-type vertical cavity surface-emitting laser structure provided in an embodiment of the present invention.

[0026] Figures 3 to 8 This is a schematic diagram of the structure formed in the method for forming a tunnel-type vertical cavity surface-emitting laser structure provided in the embodiment of the present invention.

[0027] The reference numerals in the attached figures are explained as follows:

[0028] 100 - Substrate; 110 - First distributed Bragg mirror layer; 120 - N-type spacer layer; 130 - Active layer; 140 - P-type spacer layer; 150 - Etch stop layer; 160 - First tunnel junction material layer; 160a - First tunnel junction layer; 170 - Second tunnel junction material layer; 170a - Second tunnel junction layer; 180 - Patterned photoresist layer; 190 - Second distributed Bragg mirror layer. Detailed Implementation

[0029] The tunnel-junction vertical-cavity surface-emitting laser structure and its formation method proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, different proportions may be used in different drawings to illustrate different aspects.

[0030] Figure 1 This is a schematic diagram of the tunnel-type vertical cavity surface-emitting laser structure provided in an embodiment of the present invention. Figure 1 As shown, the tunnel junction vertical cavity surface emission laser structure includes: a substrate 100, and a first distributed Bragg mirror layer 110, an active layer 130, an etch stop layer 150, a first tunnel junction layer 160a, a second tunnel junction layer 170a, and a second distributed Bragg mirror layer 190 formed on the substrate 100. The second tunnel junction layer 170a contains phosphorus, which reduces the light absorption of the second tunnel junction layer 170a at the operating wavelength (e.g., 850 nm), thereby increasing the output power of the device and reducing the threshold current.

[0031] In this embodiment, the substrate 100 can be made of GaAs (gallium arsenide).

[0032] In this embodiment, the first distributed Bragg reflector layer 110 can be an N-plane distributed Bragg reflector layer (N-DBR). The first distributed Bragg reflector layer 110 is a film layer made of two materials with different refractive indices and an optical thickness of 1 / 4 wavelength.

[0033] Optionally, the first distributed Bragg reflector layer 110 may include, but is not limited to, periodically stacked AlGaAs and AlAs.

[0034] In this embodiment, the active layer 130 is located on the first distributed Bragg mirror layer 110. The active layer 130 includes multiple quantum wells, and all quantum wells are alternately grown from two semiconductor materials with different band gaps to allow electrons and holes to recombine in the quantum wells and emit photons. The materials of the quantum wells include, but are not limited to, InGaAs and GaAs.

[0035] A further embodiment includes an N-spacer 120, which is located between the active layer 130 and the first distributed Bragg mirror layer 110. The N-spacer 120 can be made of aluminum gallium arsenide (AlGaAs).

[0036] A further embodiment includes a P-spacer 140, which is located between the active layer 130 and the etch stop layer 150. The material of the P-spacer 140 can be aluminum gallium arsenide (AlGaAs).

[0037] In this embodiment, the N-type spacer layer 120 and the P-type spacer layer 140 are used to limit carrier overflow and adjust beam quality.

[0038] like Figure 1 As shown, the etch stop layer 150 is located on the P-type spacer layer 140, and the etch stop layer 150 covers the top surface of the P-type spacer layer 140. The material of the etch stop layer 150 is indium gallium arsenide phosphide (InGaAsP). The presence of arsenic in the etch stop layer 150 is beneficial for improving the film quality of the second distributed Bragg mirror layer 190 formed on its surface, thereby facilitating lattice matching.

[0039] like Figure 1 As shown, the first tunnel junction 160a is formed on the etch stop layer 150 and exposes a portion of the top surface of the etch stop layer 150. Exemplarily, the sidewalls of the first tunnel junction 160a expose the top surface of the etch stop layer 150. Alternatively, the periphery of the first tunnel junction 160a exposes the top surface of the etch stop layer 150.

[0040] The first tunnel junction 160a is made of P-type aluminum gallium arsenide, for example, p ++ AlGaAs.

[0041] Continue to refer to Figure 1 As shown, the second tunnel junction 170a is formed on the first tunnel junction 160a, covering the top surface of the first tunnel junction 160a, and contains phosphorus. The material of the second tunnel junction 170a is N-type gallium arsenide phosphorus, for example, n... ++ Compared to GaAs, the material of the second tunneling layer 170a is n-type GaAsP. ++ GaAsP allows the second tunnel junction layer 170a to absorb less light at the operating wavelength (850nm), which is beneficial for improving the output power of the device and reducing the threshold current.

[0042] In this embodiment, the second tunnel junction layer 170a and the first tunnel junction layer 160a constitute a tunnel junction structure.

[0043] like Figure 1As shown, the second distributed Bragg mirror layer 190 covers the second tunnel junction layer 170a and extends to cover the exposed top surface of the etch stop layer 150. That is, the second distributed Bragg mirror layer 190 covers the top surface of the second tunnel junction layer 170a and extends to cover the side surfaces of the second tunnel junction layer 170a, the side surfaces of the first tunnel junction layer 160a, and the exposed top surface of the etch stop layer 150 (i.e., the top surface not covered by the first tunnel junction layer 160a). Because the etch stop layer 150 contains arsenic, it is beneficial to improve the film quality of the second distributed Bragg mirror layer 190 formed on its surface, thereby facilitating lattice matching.

[0044] In this embodiment, the second distributed Bragg reflector layer 190 can be an N-plane distributed Bragg reflector layer (N-DBR), which is a film layer made of two materials with different refractive indices stacked together.

[0045] Optionally, the second distributed Bragg reflector layer 190 includes, but is not limited to, periodically stacked AlGaAs and AlAs.

[0046] Furthermore, since the second distributed Bragg mirror layer 190 covers the second tunnel junction layer 170a and extends to cover the exposed top surface of the etch stop layer 150, and the top surface of the second tunnel junction layer 170a is higher than the top surface of the etch stop layer 150, the top surface of the portion of the second distributed Bragg mirror layer 190 located above the second tunnel junction layer 170a is higher than the top surface of the portion of the second distributed Bragg mirror layer 190 located above the etch stop layer. This facilitates the confinement of light and electricity within the device.

[0047] In this embodiment, the tunnel junction vertical cavity surface-emitting laser structure can be a Li-VCSEL (fully epitaxial oxide-free lithography defined vertical cavity surface-emitting laser).

[0048] This embodiment provides a method for forming a tunnel junction vertical cavity surface-emitting laser (VCSEL) structure, used to fabricate the tunnel junction VCSEL structure described above. Figure 2 As shown, the method for forming a tunnel-type vertical cavity surface-emitting laser structure provided in this embodiment includes:

[0049] Step S1: Provide a substrate on which a first distributed Bragg mirror layer, an active layer and an etch stop layer are formed, stacked sequentially from bottom to top, wherein the etch stop layer contains arsenic.

[0050] Step S2: Form a first tunnel junction layer and a second tunnel junction layer. The first tunnel junction layer is formed on the etch stop layer and exposes part of the top surface of the etch stop layer. The second tunnel junction layer is formed on the first tunnel junction layer and contains phosphorus.

[0051] Step S3: Form a second distributed Bragg reflector layer, which covers the second tunnel junction layer and extends to cover the top surface of the exposed etch stop layer.

[0052] Figures 3 to 8 This is a schematic diagram of the structure formed in the method for forming a tunnel-type vertical cavity surface-emitting laser structure provided in an embodiment of the present invention. The following will be combined with... Figures 3 to 8 The method for forming the tunnel-type vertical cavity surface-emitting laser structure provided in this embodiment will be described in more detail.

[0053] First, such as Figure 3 As shown, step S1 is performed, providing a substrate 100, the material of which can be GaAs (gallium arsenide).

[0054] Then, as Figure 3 As shown, a first distributed Bragg mirror layer 110 is formed on the substrate 100. Specifically, the first distributed Bragg mirror layer 110 can be an N-plane distributed Bragg mirror layer (N-DBR), which is a film layer made of two materials with different refractive indices and an optical thickness of 1 / 4 wavelength.

[0055] Optionally, the first distributed Bragg reflector layer 110 may include, but is not limited to, periodically stacked AlGaAs and AlAs.

[0056] Next, as Figure 4 As shown, an N-type spacer 120, an active layer 130, and a P-type spacer 140 are sequentially formed on the first distributed Bragg mirror layer 110. The N-type spacer 120 covers the top surface of the first distributed Bragg mirror layer 110, and the active layer 130 covers the top surface of the N-type spacer 120. That is, the N-type spacer 120 is located between the active layer 130 and the first distributed Bragg mirror layer 110, and the P-type spacer 140 covers the top surface of the active layer 130.

[0057] In this embodiment, the active layer 130 includes multiple quantum wells, and all quantum wells are alternately grown from two semiconductor materials with different band gaps, so that electrons and holes recombine in the quantum wells and emit photons. The materials of the quantum wells include, but are not limited to, InGaAs and GaAs, and the active layer 130 can be formed by metal-organic chemical vapor deposition (MOCVD).

[0058] The N-type spacer layer 120 and the P-type spacer layer 140 are used to limit carrier overflow and adjust beam quality. The materials of the N-type spacer layer 120 and the P-type spacer layer 140 can both be aluminum gallium arsenide (AlGaAs), and both the N-type spacer layer 120 and the P-type spacer layer 140 can be formed by metal-organic chemical vapor deposition (MOCVD).

[0059] Next, as Figure 5 As shown, an etch stop layer 150 is formed on the P-type spacer layer 140, covering the top surface of the P-type spacer layer 140, i.e., the P-type spacer layer 140 is located between the active layer 130 and the etch stop layer 150. The etch stop layer 150 contains arsenic, which helps improve the film quality of the second distributed Bragg mirror layer 190 subsequently formed on the surface of the etch stop layer 150, thereby facilitating lattice matching. Furthermore, the etch stop layer 150 can also serve as an etch stop film for subsequent wet etching processes.

[0060] Specifically, the material of the etch stop layer 150 can be, for example, indium gallium arsenide phosphide (InGaAsP), and the etch stop layer 150 can be formed by a metal-organic chemical vapor deposition (MOCVD) process. The phosphorus element in the etch stop layer 150 is formed using a phosphorus source during the MOCVD process.

[0061] Next, as Figure 8 As shown, step S2 is performed to form a first tunnel junction layer 160a and a second tunnel junction layer 170a. The first tunnel junction layer 160a is formed on the etch stop layer 150 and exposes part of the top surface of the etch stop layer 150. The second tunnel junction layer 170a is formed on the first tunnel junction layer 160a and contains phosphorus.

[0062] Specifically, the method for forming the first tunnel junction 160a and the second tunnel junction 170a includes: First, as... Figure 6As shown, a first tunnel junction material layer 160 and a second tunnel junction material layer 170 are sequentially formed on the etch stop layer 150. The first tunnel junction material layer 160 covers the etch stop layer 150, and the second tunnel junction material layer 170 covers the first tunnel junction material layer 160. The thickness of the first tunnel junction material layer 160 and the thickness of the second tunnel junction material layer 170 can be 8 nm-15 nm.

[0063] In this embodiment, the material of the first tunnel junction material layer 160 is P-type aluminum gallium arsenide, for example, p ++ AlGaAs. The material of the second tunnel junction material layer 170 is N-type gallium arsenide phosphide, for example, n... ++ GaAsP. The first tunnel junction material layer 160 and the second tunnel junction material layer 170 are both formed by metal-organic chemical vapor deposition (MOCVD).

[0064] Then, as Figure 8 As shown, the second tunnel junction material layer 170 and the first tunnel junction material layer 160 are sequentially etched by a wet etching process to form the second tunnel junction layer 170a and the first tunnel junction layer 160a.

[0065] More specifically, the method for etching the second tunnel junction material layer 170 and the first tunnel junction material layer 160 using a wet etching process includes: Figure 7 As shown, a patterned photoresist layer 180 is first formed on the second tunnel junction material layer 170, and the patterned photoresist layer 180 exposes a portion of the second tunnel junction material layer 170; as Figure 8 As shown, using a patterned photoresist layer 180 as a mask, a wet etching process is employed to sequentially etch the exposed second tunnel junction material layer 170 to form a second tunnel junction layer 170a, exposing a portion of the first tunnel junction material layer 160. The exposed first tunnel junction material layer 160 is then further etched to form a first tunnel junction layer 160a. The second tunnel junction layer 170a is located on the top surface of the first tunnel junction layer 160a. Afterward, the patterned photoresist layer 180 is removed. Because the second tunnel junction layer 170a contains phosphorus, this reduces the light absorption of the second tunnel junction layer 170a at the operating wavelength (e.g., 850 nm), thereby increasing output power and reducing threshold current.

[0066] In this embodiment, when etching the second tunnel junction material layer 170 and the first tunnel junction material layer 160 by a wet etching process, the etching solution used in the wet etching process includes a mixed solution of phosphoric acid, hydrogen peroxide and water.

[0067] Next, as Figure 1As shown, step S3 is performed to form a second distributed Bragg mirror layer 190. The second distributed Bragg mirror layer 190 covers the second tunnel junction layer 170a and extends to cover the exposed top surface of the etch stop layer 150. Since the etch stop layer 150 contains arsenic, the formation of the second distributed Bragg mirror layer 190 is beneficial for improving the quality of the secondary epitaxial film on the surface of the etch stop layer 150, i.e., for improving the quality of the second distributed Bragg mirror layer 190, thereby facilitating lattice matching.

[0068] In this embodiment, the second distributed Bragg reflector layer 190 can be an N-plane distributed Bragg reflector layer (N-DBR), which is a film layer made of two materials with different refractive indices stacked together.

[0069] Optionally, the second distributed Bragg mirror layer 190 may include, but is not limited to, periodically stacked AlGaAs and AlAs. The second distributed Bragg mirror layer 190 may be formed by a metal-organic chemical vapor deposition (MOCVD) process.

[0070] In summary, the tunnel junction vertical-cavity surface-emitting laser (VCSEL) structure and its formation method provided by this invention include a substrate on which a first distributed Bragg mirror layer, an active layer, and an etch stop layer are formed, stacked sequentially from bottom to top. The etch stop layer contains arsenic. A first tunnel junction layer and a second tunnel junction layer are also present. The first tunnel junction layer is formed on the etch stop layer and exposes a portion of its top surface. The second tunnel junction layer is formed on the first tunnel junction layer and contains phosphorus. A second distributed Bragg mirror layer covers the second tunnel junction layer and extends to cover the exposed top surface of the etch stop layer. Because the second tunnel junction layer contains phosphorus, its absorption of the operating wavelength is reduced, thereby increasing the device's output power and reducing the threshold current. Furthermore, the presence of arsenic in the etch stop layer improves the film quality of the second distributed Bragg mirror layer formed on its surface, thus facilitating lattice matching.

[0071] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to mutually. In addition, different parts between embodiments can also be combined with each other, and this invention does not limit this.

[0072] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A tunnel-type vertical cavity surface-emitting laser structure, characterized in that, include: A substrate on which a first distributed Bragg mirror layer, an active layer and an etch stop layer are formed in a stacked manner from bottom to top, wherein the etch stop layer contains arsenic. A first tunneling layer and a second tunneling layer, wherein the first tunneling layer is formed on the etch stop layer and exposes a portion of the top surface of the etch stop layer, and the second tunneling layer is formed on the first tunneling layer and contains phosphorus. A second distributed Bragg reflector layer covers the second tunnel junction layer and extends to cover the top surface of the exposed etch stop layer.

2. The tunnel-type vertical cavity surface-emitting laser structure as described in claim 1, characterized in that, The material of the first tunnel junction is P-type aluminum gallium arsenide, and the material of the second tunnel junction is N-type gallium arsenide phosphide.

3. The tunnel-type vertical cavity surface-emitting laser structure as described in claim 1, characterized in that, The material of the etching stop layer is indium gallium arsenide phosphide.

4. The tunnel-type vertical cavity surface-emitting laser structure as described in claim 1, characterized in that, The tunnel junction vertical cavity surface emitter laser structure further includes an N-type spacer layer and a P-type spacer layer. The N-type spacer layer is located between the active layer and the first distributed Bragg mirror layer, and the P-type spacer layer is located between the active layer and the etch stop layer.

5. The tunnel-type vertical cavity surface-emitting laser structure as described in claim 4, characterized in that, Both the N-type spacer layer and the P-type spacer layer are made of aluminum gallium arsenide.

6. A method for forming a tunnel-type vertical cavity surface-emitting laser structure, characterized in that, include: A substrate is provided on which a first distributed Bragg mirror layer, an active layer and an etch stop layer are formed in a bottom-to-top stacked manner, wherein the etch stop layer contains arsenic. A first tunnel junction layer and a second tunnel junction layer are formed. The first tunnel junction layer is formed on the etch stop layer and exposes part of the top surface of the etch stop layer. The second tunnel junction layer is formed on the first tunnel junction layer and contains phosphorus. A second distributed Bragg reflector layer is formed, which covers the second tunnel junction layer and extends to cover the top surface of the exposed etch stop layer.

7. The method for forming a tunnel-type vertical cavity surface-emitting laser structure as described in claim 6, characterized in that, The method for forming the first tunnel layer and the second tunnel layer includes: A first tunnel junction material layer and a second tunnel junction material layer are sequentially formed on the etching stop layer, wherein the first tunnel junction material layer covers the etching stop layer and the second tunnel junction material layer covers the first tunnel junction material layer; The second tunnel junction material layer and the first tunnel junction material layer are sequentially etched using a wet etching process to form the second tunnel junction layer and the first tunnel junction layer.

8. The method for forming a tunnel-type vertical cavity surface-emitting laser structure as described in claim 6, characterized in that, The material of the first tunnel junction is P-type aluminum gallium arsenide, and the material of the second tunnel junction is N-type gallium arsenide phosphide.

9. The method for forming a tunnel-type vertical cavity surface-emitting laser structure as described in claim 6, characterized in that, The material of the etching stop layer is indium gallium arsenide phosphide.

10. The method for forming a tunnel-type vertical cavity surface-emitting laser structure as described in claim 6, characterized in that, Before the formation of the first tunnel layer, the process also includes: An N-type spacer layer and a P-type spacer layer are formed, wherein the N-type spacer layer is located between the active layer and the first distributed Bragg mirror layer, and the P-type spacer layer is located between the active layer and the etch stop layer.

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