A hole transport material and a preparation method thereof
Patent Information
- Application Number
- CN202411657596.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-19
- Publication Date
- 2026-05-29
AI Technical Summary
In existing perovskite solar cells, Spiro-OMeTAD, as the hole transport layer material, has low mobility and is easily volatilized, which affects long-term stability. Furthermore, the introduced ion dopants are easily volatilized under light or heat, leading to accelerated ion migration and affecting cell stability.
By introducing ring-opening cross-linkable epoxy groups at the end of Spiro-OMeTAD, a cross-linked network structure is formed, which prevents water, oxygen and other substances from entering the hole transport layer, inhibits ion migration, and forms a high-density cross-linked network structure through the ring-opening reaction of multiple epoxy groups, thereby improving hole transport efficiency and battery stability.
It improves hole transport efficiency, suppresses ion migration, enhances the long-term stability of perovskite solar cells, and avoids material decomposition and volatilization of ion dopants.
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Figure CN122103068A_ABST
