A novel infrared nonlinear optical crystal Ag4Ge3S7 and its preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Filing Date
- 2026-03-27
- Publication Date
- 2026-05-29
AI Technical Summary
The application of existing infrared nonlinear optical crystal materials such as AgGaS2, AgGaSe2 and ZnGeP2 in the infrared band is limited by problems such as low laser damage threshold, severe two-photon absorption and thermal expansion anisotropy, making it difficult to obtain large-size, high-quality crystals and thus limiting their practical applications.
A novel infrared nonlinear optical crystal, Ag4Ge3S7, was synthesized using a high-temperature solid-state reaction method. By constructing a Ge2+/Ge4+ mixed-valence state Ge–S functional framework and Ag–S coordination network, a stable non-centrosymmetric structure was formed, providing a stable local coordination environment and charge balance. The material exhibits good thermal and chemical stability.
Ag4Ge3S7 exhibits strong nonlinear effects under 2100nm laser irradiation, with a signal intensity 1.15 times that of AgGaS2. It also possesses good thermal and chemical stability, making it suitable for infrared laser frequency conversion applications.
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