Monolithic modular microwave source with integrated process gas distribution

Abstract

Embodiments disclosed herein include a housing for a source array. In one embodiment, the housing includes an electrically conductive body, where the electrically conductive body includes a first surface and a second surface opposite the first surface. In one embodiment, a plurality of openings are formed through the electrically conductive body, and a channel is disposed in the second surface of the electrically conductive body. In one embodiment, a cover is over the channel, and the cover includes a first aperture through a thickness of the cover. In one embodiment, the housing further includes a second aperture through a thickness of the electrically conductive body. In one embodiment, the second aperture intersects the channel.

Description

[0001] This application is a divisional application of the invention patent application filed on September 17, 2020, with application number 202080066972.4 and invention title "Monolithic Modular Microwave Source with Integrated Processing Gas Distribution".

[0002] Cross-references to related applications

[0003] This application claims priority to U.S. non-provisional application No. 16 / 586,482, filed September 27, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0004] The implementation relates to the field of semiconductor manufacturing, and more particularly to a monolithic source array with integrated processing gas distribution for high-frequency sources. Background Technology

[0005] Some high-frequency plasma sources include an applicator that passes through an opening in a dielectric plate. This opening allows the applicator (e.g., a dielectric cavity resonator) to be exposed to the plasma environment. However, it has been shown that plasma is also generated within the opening in the dielectric plate surrounding the applicator. This can potentially create plasma inhomogeneities within the processing chamber. Furthermore, exposing the applicator to the plasma environment can lead to faster degradation of the applicator.

[0006] In some implementations, the applicator is positioned above or within a cavity, entering (but not penetrating) the dielectric. This configuration reduces coupling with the cavity interior and therefore does not provide optimal plasma generation. The coupling of high-frequency electromagnetic radiation with the cavity interior is reduced in part due to the additional interface between the dielectric and the applicator, across which the high-frequency electromagnetic radiation needs to propagate. Furthermore, variations at each applicator and across the interface of different processing tools (e.g., applicator positioning, surface roughness of the applicator and / or dielectric, angle of the applicator relative to the dielectric, etc.) can lead to plasma inhomogeneities.

[0007] In particular, plasma inhomogeneities are more likely to occur (within a single processing chamber and / or across different processing chambers, e.g., chamber matching) when the applicator is a discrete component. For example, in the case of discrete components, small variations (e.g., component, processing tolerance, etc.) can lead to plasma inhomogeneities, which can negatively affect the processing conditions within the chamber. Summary of the Invention

[0008] The embodiments disclosed herein include a housing for a source array. In one embodiment, the housing includes a conductor, wherein the conductor includes a first surface and a second surface opposite to the first surface. In one embodiment, a plurality of openings are formed through the conductor, and a channel is disposed in the second surface of the conductor. In one embodiment, a cover is placed over the channel, and the cover includes a first hole extending through the thickness of the cover. In one embodiment, the housing further includes a second hole extending through the thickness of the conductor. In one embodiment, the second hole intersects with the channel.

[0009] The implementation may also include components for processing the tool, the components including a monolithic source array and a housing. In one embodiment, the monolithic source array includes a dielectric plate having a first surface and a second surface opposite to the first surface, and a plurality of protrusions extending from the first surface of the dielectric plate. In one embodiment, a plurality of gas distribution holes open from the first surface of the dielectric plate to the second surface. In one embodiment, the housing is attached to the monolithic source array and includes a conductor having a third surface and a fourth surface opposite to the third surface. In one embodiment, a plurality of openings pass through the conductor, and each opening surrounds a different one of the plurality of protrusions. In one embodiment, a channel is disposed in the fourth surface of the conductor and a cover is provided over the channel. In one embodiment, the cover includes a plurality of first holes fluidly coupled to the gas distribution holes. In one embodiment, the housing also includes a second hole through the conductor, the second hole intersecting the channel.

[0010] Implementations may also include processing tools. In one embodiment, the processing tool includes a chamber and an assembly that interfaces with the chamber. In one embodiment, the assembly includes a monolithic source array having a plurality of protrusions and a plurality of gas distribution holes extending through the thickness of the monolithic source array. In one embodiment, the monolithic source array further includes a housing having a conductor and an opening through the conductor for receiving the plurality of protrusions. In one embodiment, a channel in the conductor is fluidly coupled to the gas distribution holes. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of a processing tool according to one embodiment, the processing tool including a modular high-frequency emission source having a monolithic source array including a plurality of applicators.

[0012] Figure 2 This is a block diagram of a modular high-frequency transmission module according to one implementation method.

[0013] Figure 3 It is an exploded perspective view of the components according to one implementation method.

[0014] Figure 4A This is a plan view of a cover plate and gas distribution pipeline according to one embodiment.

[0015] Figure 4B According to one implementation method Figure 4A The diagram shows the cross-section of the cover plate along line B-B'.

[0016] Figure 5A This is a perspective view of the bottom surface of a conductive housing according to one embodiment.

[0017] Figure 5B It is according to one implementation method along line B-B' Figure 5A A cross-sectional view of the conductive outer shell.

[0018] Figure 6 This is a cross-sectional diagram of a component according to one embodiment, which more clearly shows the gas distribution network.

[0019] Figure 7 This is a cross-sectional view of a processing tool according to one embodiment, the processing tool including components having an integrated gas distribution network.

[0020] Figure 8 A block diagram of an exemplary computer system that can be used in conjunction with a high-frequency plasma tool according to one embodiment is shown. Detailed Implementation

[0021] The system described herein includes a monolithic source array with integrated gas distribution for a high-frequency source. Numerous specific details are set forth in the following description to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that embodiments can be practiced without these specific details. In other instances, well-known aspects have not been described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0022] As described above, a high-frequency plasma source with a discrete applicator can lead to plasma inhomogeneity within the cavity, and suboptimal injection of high-frequency electromagnetic radiation into the cavity. Plasma inhomogeneity can occur for various reasons, such as assembly problems, manufacturing tolerances, degradation, and similar causes. Suboptimal injection of high-frequency electromagnetic radiation into the cavity may (in part) be caused by the interface between the applicator and the dielectric plate.

[0023] Therefore, the embodiments disclosed herein include monolithic source arrays. In one embodiment, the monolithic source array includes a dielectric plate and a plurality of protrusions extending upward from the surface of the dielectric plate. In particular, the protrusions and the dielectric plate form a monolithic component. That is, the protrusions and the dielectric plate are made of a single piece of material. The dimensions of the protrusions are suitable for use as applicators. For example, holes can be fabricated into the protrusions to accommodate a monopole antenna. Thus, the protrusions can be used as dielectric cavity resonators.

[0024] Implementing the source array as a monolithic component offers several advantages. One benefit is the ability to maintain tight manufacturing tolerances, ensuring high uniformity between parts. Discrete applicators require assembly, while monolithic source arrays eliminate potential assembly variations. Furthermore, since there is no longer a physical interface between the applicator and the dielectric, using a monolithic source array improves the ability to inject high-frequency electromagnetic radiation into the chamber.

[0025] The monolithic source array also provides improved plasma uniformity within the chamber. Specifically, the plasma-exposed surface of the dielectric plate does not contain any gaps to accommodate the applicator. Furthermore, the lack of a solid interface between the protrusions and the dielectric plate improves the diffusion of the lateral electric field within the dielectric plate.

[0026] Monolithic source arrays also require a different gas distribution scheme than previous solutions. Previously, gas flowed into the chamber through openings in the dielectric plate housing the applicator. Since these openings have been removed, a different solution is needed. Therefore, the embodiments disclosed herein include gas distribution schemes implemented by different components of the assembly. For example, horizontal gas distribution can be achieved within the housing surrounding the monolithic source array. Therefore, only vertical gas distribution holes need to be drilled in the monolithic source array. That is, in some embodiments, the monolithic source array does not require horizontal gas routing channels. This simplifies the manufacture of the monolithic source array and reduces costs.

[0027] Now refer to Figure 1A cross-sectional illustration of a plasma processing tool 100 according to one embodiment is shown. In some embodiments, the processing tool 100 can be a processing tool suitable for any type of processing operation utilizing plasma. For example, the processing tool 100 can be a processing tool for plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), etching and selective removal processes, and plasma cleaning. Additional embodiments may include a processing tool 100 that utilizes high-frequency electromagnetic radiation without generating plasma (e.g., microwave heating, etc.). As used herein, “high-frequency” electromagnetic radiation includes radio frequency radiation, very-high-frequency radiation, ultra-high-frequency radiation, and microwave radiation. “High frequency” can refer to frequencies between 0.1 MHz and 300 GHz.

[0028] Generally, embodiments include a processing tool 100, which includes a chamber 178. In the processing tool 100, the chamber 178 may be a vacuum chamber. The vacuum chamber may include a pump (not shown) to remove gas from the chamber to provide the required vacuum. Additional embodiments may include a chamber 178 including one or more gas lines 170 for supplying processing gas into the chamber 178 and an exhaust line 172 for removing byproducts from the chamber 178. Although not shown, it is understood that gas may also be injected into the chamber 178 via a monolithic source array 150 (e.g., as a nozzle) to uniformly distribute the processing gas over a substrate 174.

[0029] In one embodiment, the substrate 174 may be supported on a chuck 176. For example, the chuck 176 can be any suitable chuck, such as an electrostatic chuck. The chuck 176 may also include cooling lines and / or heaters to provide temperature control to the substrate 174 during processing. Due to the modular configuration of the high-frequency emission module described herein, embodiments allow the processing tool 100 to accommodate a substrate 174 of any size. For example, the substrate 174 may be a semiconductor chip (e.g., 200 mm, 300 mm, 450 mm, or larger). Alternative embodiments also include substrates 174 other than semiconductor chips. For example, embodiments may include a processing tool 100 configured for processing glass substrates (e.g., for display technologies).

[0030] According to one embodiment, the processing tool 100 includes a modular high-frequency emission source 104. The modular high-frequency emission source 104 may include an array of high-frequency emission modules 105. In one embodiment, each high-frequency emission module 105 may include an oscillator module 106, an amplification module 130, and an applicator 142. As shown, the applicator 142 is schematically shown as being integrated into a monolithic source array 150. However, it is to be understood that the monolithic source array 150 may be a monolithic structure including one or more portions of the applicator 142 (e.g., a dielectric resonator) and a dielectric plate facing the interior of the chamber 178.

[0031] In one embodiment, the oscillator module 106 and the amplification module 130 may include electrical components, which are solid-state electrical components. In one embodiment, each of the plurality of oscillator modules 106 may be communicatively coupled to a different amplification module 130. In some embodiments, the ratio between the oscillator modules 106 and the amplification modules 130 may be 1:1. For example, each oscillator module 106 may be electrically coupled to a single amplification module 130. In one embodiment, the plurality of oscillator modules 106 may generate incoherent electromagnetic radiation. Therefore, the electromagnetic radiation induced in chamber 178 will not interact in a manner that creates undesirable interference patterns.

[0032] In one embodiment, each oscillator module 106 generates high-frequency electromagnetic radiation that is transmitted to the amplification module 130. After being processed by the amplification module 130, the electromagnetic radiation is transmitted to the applicator 142. In one embodiment, the applicator 142 each emits electromagnetic radiation into a chamber 178. In some embodiments, the applicator 142 couples the electromagnetic radiation into a processing gas in the chamber 178 to generate plasma.

[0033] Now refer to Figure 2A schematic diagram of a solid-state high-frequency emission module 105 according to one embodiment is shown. In one embodiment, the high-frequency emission module 105 includes an oscillator module 106. The oscillator module 106 may include a voltage control circuit 210 for providing an input voltage to a voltage-controlled oscillator 220 to generate high-frequency electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between approximately 1V and 10V DC. The voltage-controlled oscillator 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to one embodiment, the input voltage from the voltage control circuit 210 causes the voltage-controlled oscillator 220 to oscillate at a desired frequency. In one embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 0.1 MHz and 30 MHz. In one embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 30 MHz and 300 MHz. In one embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 300 MHz and 1 GHz. In one embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 1 GHz and 300 GHz.

[0034] According to one embodiment, electromagnetic radiation is transmitted from a voltage-controlled oscillator 220 to an amplification module 130. The amplification module 130 may include a driver / preamplifier 234 and a main power amplifier 236, each coupled to a power supply 239. According to one embodiment, the amplification module 130 may operate in pulse mode. For example, the amplification module 130 may have a duty cycle between 1% and 99%. In a more specific embodiment, the amplification module 130 may have a duty cycle between approximately 15% and 50%.

[0035] In one embodiment, electromagnetic radiation can be transmitted to the thermal breaker 249 and the applicator 142 after being processed by the amplification module 130. However, due to output impedance mismatch, a portion of the power transmitted to the thermal breaker 249 may be reflected back. Therefore, some embodiments include a detector module 281 that allows the levels of the forward power 283 and the reflected power 282 to be sensed and fed back to the control circuit module 221. It should be understood that the detector module 281 may be located at one or more different locations in the system (e.g., between the circulator 238 and the thermal breaker 249). In one embodiment, the control circuit module 221 interprets the forward power 283 and the reflected power 282 and determines the levels of the control signal 285 communicatively coupled to the oscillator module 106 and the control signal 286 communicatively coupled to the amplification module 130. In one embodiment, the control signal 285 adjusts the oscillator module 106 to optimize the high-frequency radiation coupled to the amplification module 130. In one embodiment, control signal 286 adjusts amplification module 130 to optimize the output power coupled to applicator 142 via thermal breaker 249. In one embodiment, in addition to impedance matching in custom thermal breaker 249, feedback control of oscillator module 106 and amplification module 130 may allow the reflected power level to be less than about 5% of the forward power. In some embodiments, feedback control of oscillator module 106 and amplification module 130 may allow the reflected power level to be less than about 2% of the forward power.

[0036] Therefore, this implementation allows for an increase in the percentage of forward power to be coupled into the processing chamber 178, and also increases the available power coupled into the plasma. Furthermore, impedance tuning using feedback control is superior to impedance tuning in typical slot-plate antennas. In slot-plate antennas, impedance tuning involves moving two dielectric blocks formed in the applicator. This involves mechanical movement of two separate components within the applicator, which increases the complexity of the applicator. Moreover, mechanical movement may not be as precise as the frequency change provided by a voltage-controlled oscillator 220.

[0037] Now for reference Figure 3 This represents an exploded perspective view of component 370 according to one embodiment. In one embodiment, component 370 includes a monolithic source array 350, a housing 372, and a cover plate 376. As indicated by the arrows, the housing 372 is mounted on and surrounds the monolithic source array 350, and the cover plate 376 covers the housing 372. In the illustrated embodiment, component 370 is shown with a substantially circular shape. However, it should be understood that component 370 may have any desired shape (e.g., polygonal, elliptical, wedge-shaped, or similar).

[0038] In one embodiment, the monolithic source array 350 includes a dielectric plate 360 ​​and a plurality of protrusions 366 extending upward from the dielectric plate 360. In one embodiment, the dielectric plate 360 ​​and the plurality of protrusions 366 are a monolithic structure. That is, there is no physical interface between the bottom of the protrusions 366 and the dielectric plate 360. As used herein, a “physical interface” refers to a first surface of a first discrete body contacting a second surface of a second discrete body.

[0039] Each of the protrusions 366 is part of the applicator 142 for injecting high-frequency electromagnetic radiation into the processing chamber 178. Specifically, the protrusions 366 serve as dielectric cavity resonators for the applicator 142. In one embodiment, the monolithic source array 350 comprises a dielectric material. For example, the monolithic source array 350 may be a ceramic material. In one embodiment, a suitable ceramic material for the monolithic source array 350 is Al2O3. The monolithic structure can be manufactured from a single piece of material. In other embodiments, the monolithic source array 350 can be roughened using a molding process, followed by machining to provide a final structure with the desired dimensions. For example, green state machining and firing can be used to provide the desired shape of the monolithic source array 350. In the illustrated embodiment, the protrusions 366 are shown as having a circular cross-section (when viewed along a plane parallel to the dielectric plate 360). However, it should be understood that the protrusions 366 may include many different cross-sections. For example, the cross-section of the protrusion 366 can have any centrally symmetric shape.

[0040] In one embodiment, housing 372 includes a conductor 373. For example, conductor 373 may be aluminum or the like. Housing includes a plurality of openings 374. Openings 374 can extend completely through the thickness of conductor 373. The openings 374 can be sized to receive protrusions 466. For example, as housing 372 is displaced toward monolithic source array 350 (as indicated by the arrow), protrusions 466 will be inserted into openings 374. In one embodiment, openings 374 may have a diameter of approximately 15 mm or greater.

[0041] In the illustrated embodiment, housing 372 is shown as a single conductor 373. However, it is to be understood that housing 372 may include one or more discrete conductive components. Discrete components may be individually grounded, or discrete components may be mechanically or by any form of metallic bonding to form a single conductor 373.

[0042] In one embodiment, cover 376 may include a conductor 379. In one embodiment, conductor 379 is formed of the same material as conductor 373 of housing 372. For example, cover 376 may include aluminum. In one embodiment, cover 376 may be secured to housing 372 using any suitable fastening mechanism. For example, cover 376 may be secured to housing 372 using bolts or the like. In some embodiments, cover 376 and housing 372 may also be implemented as a single monolithic structure. In one embodiment, both cover 376 and housing are electrically grounded during operation of the processing tool.

[0043] Now for reference Figure 4A and Figure 4B According to one embodiment, more detailed plan and cross-sectional views of the cover plate 476 are shown. As shown, gas lines are coupled to a first surface 412 of the cover plate 476. For example, a single input 415 may be split into multiple first gas lines 417A-C. Each first gas line 417 may be further distributed at a separator 413 to second gas lines 418A-F. The second gas lines 418 are coupled to the cover plate 476 (e.g., via a coupler 419 bolted to the cover plate 476). In one embodiment, the coupler 419 may secure an O-ring (not shown) that seals the junction between the end of the second gas line 418 and the hole 414 through the cover plate 476. Figure 4B As shown, the hole 414 extends from the first surface 412 through the conductor 479 to the second surface 411 of the cover plate 476.

[0044] In one embodiment, each first gas line 417 is substantially the same length, and each second gas line 418 is substantially the same length. Thus, the length of each path (from input 415 to one of the holes 414 in cover 476) is substantially uniform. Although one example of a gas routing scheme has been provided, it should be understood that any number of holes 414 and any number of gas lines 417 / 418 can be used to guide the process gas to cover 476.

[0045] Now for reference Figure 5A The diagram shows a perspective view of a housing 572 according to one embodiment. The illustrated embodiment depicts a second surface 533 of the housing 572. The second surface 533 is the surface facing the monolithic source array, while the first surface 534 faces the cover plate. As shown, the housing 572 includes a conductor 573 having a plurality of openings 574.

[0046] In one embodiment, a plurality of gas distribution channels are disposed in the second surface 533. The gas distribution channels are covered by a cap 531. In one embodiment, the cap 531 is welded to a conductor 573 to provide an hermetically tight seal. The gas distribution channels and cap 531 distribute gas from the outer periphery of the housing 572 toward the axial center of the housing 572. In the illustrated embodiment, each gas distribution channel and cap 531 surrounds one or more openings 574. However, it should be understood that other embodiments may include gas distribution channels employing any path. In the illustrated embodiment, a single continuous gas distribution channel and cap 531 is shown. However, it should be understood that embodiments may include any number of gas distribution channels (e.g., one or more gas distribution channels that may or may not be fluidly coupled together), and each gas distribution channel may have a different cap. Furthermore, it should be understood that the openings 574 and the gas distribution channels are not fluidly coupled to each other. That is, during operation, the process gas flows through the gas distribution channels, and the process gas may not pass through the openings 574.

[0047] In one embodiment, a group 532 of the first holes 537 may pass through the cover 531. The group 532 of the first holes 537 provides an outlet location for gas within the gas distribution channel. In one embodiment, the number of first holes 537 in each group 532 may be non-uniform. For example, group 532A may have one or two holes 537, group 532B may have three or four holes 537, and group 532C may have more than four holes 537. That is, a group closer to the axial center of the housing 572 may have a greater number of holes 537 than a group closer to the periphery of the housing 572. In one embodiment, each group 532 may be surrounded by an O-ring or other sealing member. The O-ring is pressed against the monolithic source array to provide a seal.

[0048] Now for reference Figure 5B This illustrates the line B-B' according to one embodiment. Figure 5A A cross-sectional view of the outer casing 572 is shown. The cross-sectional view shows the gas distribution channel 530 more clearly. The channel 530 is recessed into the second surface 533 of the conductor 573. In the cross-sectional view, the channel 530 is shown as discontinuous, but it should be understood that portions of the channel 530 may be wrapped around... Figure 5B Around the opening 574 outside the plane, so as to fluidly couple portions of channel 530 together. For example, the shown portions of channel 530A are fluidly coupled together, while the shown portions of channel 530B are fluidly coupled together.

[0049] In one embodiment, processing gas is supplied to channel 530 from a second hole 535 perpendicularly passing through conductor 573. That is, the second hole 535 intersects with channel 530. The second hole 535 can be fluidly coupled to hole 414 via cover plate 476. In one embodiment, the second hole 535 is located near the edge of housing 572, and channel 530 horizontally distributes processing gas. Cover 531 is over channel 530 and provides a seal, except at the location of group 532 of first hole 537. Groups 532B and 532C are visible in the illustrated cross-section, and group 532A is... Figure 5B Outside the plane shown. The distribution of the group 532 of the first hole 537 along the channel 530 provides uniform gas distribution across the workpiece surface in the processing tool.

[0050] Now for reference Figure 6 The diagram shows a cross-sectional view of a portion of a component 670 according to one embodiment. Component 670 includes a monolithic source array 650, a housing 672, and a cover plate 676.

[0051] In one embodiment, the second surface 633 of the conductor 673 is supported by the first surface 661 of the dielectric plate 660. In the illustrated embodiment, the conductor 673 is directly supported by the first surface 661; however, it should be understood that a thermal interface material or the like can separate the conductor 673 from the first surface 661. In one embodiment, the second surface 662 of the dielectric plate 660 faces away from the housing 672. A protrusion 666 of the monolithic source array 650 is fitted into an opening in the housing 672. In one embodiment, a cover plate 676 covers the housing 672 and the protrusion 666. For example, the second surface 611 of the cover plate 676 covers the first surface 634 of the housing 672. A monopole antenna 668 can pass through the cover plate 676 and extend into a hole 665 at the axial center of the protrusion 666. The width of the hole 665 can be greater than the width of the monopole antenna 668. Therefore, in some embodiments, tolerances for thermal expansion are provided to prevent damage to the monolithic source array 650. The monopole antenna 668 is electrically coupled to a power supply (e.g., high-frequency transmission module 105).

[0052] In one embodiment, a gas distribution network passes through components of assembly 670. Initially, gas is introduced into assembly 670 via gas line 618. Gas line 618 is coupled to a first surface 612 of cover plate 676 via coupler 619. An O-ring (not shown) may be located between coupler 619 and first surface 612. The processed gas then travels through orifice 614, which passes through cover plate 676. Gas distribution continues through orifice 635, which passes through conductor 673 of housing 672. In one embodiment, an O-ring or similar object (not shown) may surround the interface between orifice 614 and orifice 635 to provide a seal.

[0053] As shown, orifice 635 intersects with channel 630. Channel 630 laterally distributes the processed gas. Channel 630 is sealed by cap 631, and the gas is distributed outside housing 672 through group 632 of orifices 637 in cap 631. In one embodiment, the gas then flows through orifice 663 through dielectric plate 660. Orifice 663 can be aligned with orifice 637 in group 632. In one embodiment, the diameter of orifice 663 through dielectric plate 660 is larger than the diameter of orifice 637 through cap 631. In one embodiment, an O-ring or similar (not shown) surrounds the interface between orifice 637 in cap 631 and orifice 663 through dielectric plate 660.

[0054] Now refer to Figure 7 The illustration shows a cross-sectional view of a workpiece 700 according to an embodiment, the processing tool 700 including an assembly 770. In one embodiment, the processing tool includes a chamber 778 sealed by the assembly 770. For example, the assembly 770 may abut against one or more O-rings 781 to provide a vacuum seal to the internal volume 783 of the chamber 778. In other embodiments, the assembly 770 may engage with the chamber 778. That is, the assembly 770 may be part of the sealed chamber 778 of a cover. In one embodiment, the processing tool 700 may include a plurality of processing volumes (which may be fluidly coupled together), wherein each processing volume has a different assembly 770. In one embodiment, a chuck 779 or the like may support a workpiece 774 (e.g., a chip, substrate, etc.).

[0055] In one embodiment, component 770 may be substantially similar to component 670 described above. For example, component 770 includes a monolithic source array 750, a housing 772, and a cover plate 776. The monolithic source array 750 may include a dielectric plate 760 and a plurality of protrusions 766 extending upward from the dielectric plate 760. The housing 772 may have openings sized to receive the protrusions. In one embodiment, a monopole antenna 768 may extend into a hole 765 in the protrusion 766. The monopole antenna 768 may pass through the housing 772 and the top plate 576 above the protrusions 766.

[0056] In one embodiment, chamber volume 783 may be adapted to impinge plasma 782. That is, chamber volume 783 may be a vacuum chamber. For impinging plasma 782, process gas may be flowed into chamber volume 783. Process gas may enter assembly 770 via gas line 718. The process gas then passes through hole 714 through cover plate 776 and into hole 735 in housing 772. Hole 735 intersects with gas distribution channel 730, which laterally distributes the process gas. The process gas exits channel 730 through group 732 of holes 737 in cover above channel 730. The process gas then passes through gas distribution hole 763, which passes through dielectric plate 760 of monolithic source array 750, and into chamber volume 783.

[0057] Now refer to Figure 8 A block diagram of an exemplary computer system 860 of a processing tool according to one embodiment is shown. In one embodiment, the computer system 860 is coupled to and controls processing within the processing tool. The computer system 860 may be connected (e.g., networked) to a local area network (LAN), an intranet, an extranet, or other machines on the Internet. The computer system 860 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 860 may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a cellular phone, a web browsing device, a server, a network router, a switch, or a bridge, or any machine capable of executing a set of instructions (sequential or otherwise) specifying the actions to be taken by the machine. Further, although only a single machine is illustrated with respect to the computer system 860, the term "machine" should also be considered to include any series of machines (e.g., computers) that individually or jointly execute a set (or more) of instructions to perform any one or more of the methods discussed herein.

[0058] Computer system 860 may include a computer program product or software 822 having a non-transitory machine-readable medium having instructions stored on the non-transitory machine-readable medium, the instructions being used to program computer system 860 (or other electronic device) to perform actions according to an embodiment. Machine-readable medium includes any mechanism for storing or transmitting information in a form that can be read by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media includes machine-readable storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory, etc.), machine-readable transmission media (e.g., electrical, optical, acoustic, or other forms of propagation signals (e.g., infrared signals, digital signals, etc.)), etc.

[0059] In one embodiment, the computer system 860 includes a processor 802, a main memory 804 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (e.g., synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)) etc.) that communicate with each other via a bus 830, a static memory 806 (e.g., flash memory, static random access memory (SRAM) etc.), and an auxiliary memory 818 (e.g., a data storage device).

[0060] System processor 802 represents one or more general-purpose processing devices, such as microprocessors, central processing units, or the like. More specifically, the system processor may be a Complex Instruction Set Computing (CISC) microprocessor, a Reduced Instruction Set Computing (RISC) microprocessor, a Very Long Instruction Word (VLIW) microprocessor, a system processor implementing other instruction sets, or a system processor implementing combinations of instruction sets. System processor 802 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal system processors (DSPs), network system processors, or the like. System processor 802 is configured to execute processing logic 826 to perform the operations described herein.

[0061] The computer system 860 may further include a system network interface device 808 for communication with other devices or machines. The computer system 860 may also include a video display unit 810 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), a digit input device 812 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 816 (e.g., a speaker).

[0062] Auxiliary storage 818 may include machine-accessible storage medium 832 (or more specifically, computer-readable storage medium) storing one or more sets of instructions (e.g., software 822) that implement one or more of the methods or functions described herein. Software 822 may also reside ( wholly or at least partially) in main memory 804 and / or system processor 802 during execution by computer system 860, which also constitute machine-readable storage media. Software 822 may be further transmitted or received on network 820 via system network interface device 808. In one embodiment, network interface device 808 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0063] Although machine-accessible storage medium 832 is shown as a single medium in one exemplary embodiment, the term "machine-readable storage medium" should also be understood to include single or multiple media (e.g., centralized or distributed databases and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be understood to include any medium capable of storing or encoding a set of instructions for execution by a machine and causing the machine to perform one or more of the methods. Therefore, the term "machine-readable storage medium" should be understood to include (but is not limited to) solid-state memory as well as optical and magnetic media.

[0064] Specific exemplary embodiments have been described in the foregoing specification. It is obvious that various modifications can be made to these embodiments without departing from the scope of the following claims. Therefore, the specification and drawings should be viewed from an illustrative rather than a limiting perspective.

Claims

1. A conductive plate configured for use in a cover assembly of a microwave source, comprising: A conductor having a plurality of openings extending through the conductor, each opening being configured to accommodate a dielectric resonator; The conductor includes a first surface that mates with the cover plate and a second surface that mates with the nozzle to form the cover assembly; Multiple gas distribution channels are disposed within the second surface of the conductor; Each of the plurality of gas distribution channels extends from the outer edge adjacent to the conductor toward the axial center of the conductor along straight and curved paths, and includes: build, At least one first hole extending from the channel to the first surface, and Multiple second holes extending through the cover.

2. The conductive plate according to claim 1, wherein, One of the plurality of gas channels corresponds to one of the plurality of openings surrounding the conductor.

3. The conductive plate according to claim 2, wherein, A portion of the plurality of second holes extending through the cover is located above one of the plurality of gas channels corresponding to one of the plurality of openings surrounding the conductor.

4. The conductive plate according to claim 2, wherein, One of the plurality of gas channels has a linear portion between the corresponding one of the plurality of openings and the axial center of the conductor.

5. The conductive plate according to claim 4, wherein, A first portion of the plurality of second holes extending through the cover is located above one of the plurality of gas channels corresponding to one of the plurality of openings surrounding the conductor, and wherein a second portion of the plurality of second holes extending through the cover is located at the end of the linear portion adjacent to the axial center of the conductor.

6. The conductive plate according to claim 4, wherein, The second of the plurality of openings in the conductor is adjacent to the first side of the linear portion.

7. The conductive plate according to claim 6, wherein, The third of the plurality of openings in the conductor is adjacent to the second side of the linear portion, and the second side is opposite to the first side.

8. The conductive plate according to claim 1, wherein, The cover is welded to the conductor.

9. The conductive plate according to claim 1, wherein, The cover bolts are fixed to the conductor.

10. The conductive plate according to claim 1, wherein, The diameter of each of the plurality of openings passing through the conductor is approximately 15 mm or greater.

11. A cover assembly for a microwave source, configured to generate plasma within a processing chamber, comprising: A conductor having a first surface, a second surface opposite to the first surface, and an opening extending from the first surface to the second surface; A dielectric resonator arranged in the opening; A cover plate that mates with the first surface; A monopole antenna that passes through the cover plate and extends into the dielectric resonator; A nozzle that mates with the second surface and has a plurality of holes extending through the nozzle; Multiple gas distribution channels are disposed within the second surface of the conductor; Each of the plurality of gas distribution channels extends from the outer edge adjacent to the conductor toward the axial center of the conductor along straight and curved paths, and includes: Cover plate, At least one first hole, said at least one hole extending from the gas distribution channel to the first surface and connectable to a gas line through a hole in the cover plate, and Multiple second holes extend through the cover plate and are substantially aligned with the holes of the nozzle, so that gas introduced into the gas distribution channel enters the processing chamber through the nozzle.

12. The cover assembly according to claim 11, wherein, One of the plurality of gas channels surrounds an opening in the conductor.

13. The cover assembly according to claim 12, wherein, A portion of the plurality of second holes extending through the cover is located below one of the plurality of gas channels surrounding the opening in the conductor.

14. The cover assembly according to claim 12, wherein, One of the plurality of gas channels has a linear portion between the opening and the axial center of the conductor.

15. The cover assembly according to claim 14, wherein, A first portion of the plurality of second holes extending through the cover is located above one of the plurality of gas channels surrounding the opening in the conductor, and a second portion of the plurality of second holes extending through the cover is located at the end of the linear portion adjacent to the axial center of the conductor.

16. The cover assembly of claim 14, wherein, The conductor includes a second opening adjacent to the first side of the linear portion.

17. The cover assembly according to claim 16, wherein, The conductor includes a third opening adjacent to a second side of the linear portion, the second side being opposite to the first side.

18. The cover assembly according to claim 11, wherein, The cover is welded to the conductor.

19. The cover assembly according to claim 11, wherein, The cover bolts are fixed to the conductor.

20. The cover assembly according to claim 11, wherein, Each of the plurality of openings passing through the conductor has a diameter of approximately 15 millimeters or greater.

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