Light emitting device and display apparatus including the same

Abstract

Light emitting devices and display apparatuses are provided. A light emitting device includes a light emitting structure; a first-conductivity-type base layer; a transparent electrode layer; a reflective electrode layer contacting the transparent electrode layer and extending in a horizontal direction; an upper insulating layer surrounding the first-conductivity-type base layer; a first contact electrode disposed conformally on an upper surface of the first-conductivity-type base layer; and a second contact electrode penetrating the upper insulating layer and contacting the reflective electrode layer. A vertical level of each of uppermost surfaces of the first contact electrode and the second contact electrode is higher than a vertical level of an uppermost surface of the first-conductivity-type base layer, and a vertical level of a lowermost surface of the second contact electrode is lower than a vertical level of a lowermost surface of the first-conductivity-type base layer.

Description

Cross-reference of related applications

[0001] This application is based on and claims priority to Korean Patent Application No. 10-2024-0172765, filed on November 27, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to a light-emitting device and a display device including the light-emitting device, and more specifically, to a light-emitting device having excellent light extraction efficiency and a display device including the light-emitting device. Background Technology

[0003] Light-emitting devices (i.e., light sources that convert electrical energy into light energy) have been widely used as light sources in various display devices, such as lighting fixtures, TVs, mobile phones, PCs, laptops, personal digital assistants (PDAs), digital cameras, camcorders, viewfinders, microdisplays, 3D displays, augmented reality displays, and smartwatches. Recently, micron- or nanon-scale ultra-miniature light-emitting devices using compound semiconductors have been developed, and there is a need to develop light-emitting devices with novel structures to improve the light extraction efficiency in these ultra-miniature devices. Summary of the Invention

[0004] On the one hand, a light-emitting device having a structure that can improve light extraction efficiency and a display device including the light-emitting device are provided.

[0005] According to one or more embodiments, a light-emitting device is provided, comprising: a light-emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer extending vertically from top to bottom; a first conductivity type substrate layer located on the light-emitting structure; a transparent electrode layer below and covering the second conductivity type semiconductor layer; a reflective electrode layer contacting the transparent electrode layer and extending horizontally; an upper insulating layer surrounding the first conductivity type substrate layer; a first contact electrode conformally disposed on an upper surface of the first conductivity type substrate layer; and a second contact electrode penetrating the upper insulating layer and contacting the reflective electrode layer. The uppermost surface of each of the first and second contact electrodes has a vertical horizontal level higher than that of the uppermost surface of the first conductivity type substrate layer in the vertical direction, and the lowermost surface of the second contact electrode has a vertical horizontal level lower than that of the lowermost surface of the first conductivity type substrate layer in the vertical direction.

[0006] According to another aspect of one or more embodiments, a light-emitting device is provided, the light-emitting device comprising: a light-emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer extending vertically from top to bottom; a first conductivity type substrate layer on the light-emitting structure; a transparent electrode layer below and covering the second conductivity type semiconductor layer; a first reflective electrode layer contacting a lower surface of the first conductivity type substrate layer and extending horizontally; a second reflective electrode layer contacting a lower surface of the transparent electrode layer and extending horizontally; an upper insulating layer surrounding the first conductivity type substrate layer; a first contact electrode penetrating the upper insulating layer and contacting the first reflective electrode layer; and a second contact electrode penetrating the upper insulating layer and contacting the second reflective electrode layer. The uppermost surface of each of the first and second contact electrodes has a vertical level higher than the uppermost surface of the first conductivity type substrate layer in the vertical direction, and the lowermost surface of each of the first and second contact electrodes has a vertical level equal to or lower than the lowermost surface of the first conductivity type substrate layer in the vertical direction.

[0007] According to another aspect of one or more embodiments, a display device is provided, the display device comprising: a driving circuit board including interconnects and transistors; and a light-emitting device disposed on the driving circuit board. The light-emitting device includes: a light-emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer extending vertically from top to bottom; a first conductivity type substrate layer on the light-emitting structure; a transparent electrode layer below and covering the second conductivity type semiconductor layer; a reflective electrode layer contacting the transparent electrode layer and extending horizontally; an upper insulating layer surrounding the first conductivity type substrate layer; a first contact electrode conformally disposed on an upper surface of the first conductivity type substrate layer; and a second contact electrode penetrating the upper insulating layer and contacting the reflective electrode layer. The uppermost surface of each of the first and second contact electrodes has a vertical horizontal plane higher than the vertical horizontal plane of the uppermost surface of the first conductivity type substrate layer in the vertical direction, and the lowermost surface of the second contact electrode has a vertical horizontal plane lower than the vertical horizontal plane of the lowermost surface of the first conductivity type substrate layer in the vertical direction, and the second contact electrode is connected to the transistor via interconnects.

[0008] According to another aspect of one or more embodiments, a display device is provided, the display device comprising: a driving circuit board including interconnects and transistors; and a light-emitting device disposed on the driving circuit board. The light-emitting device includes: a light-emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer in a vertical direction from top to bottom; a first conductivity type substrate layer on the light-emitting structure; a transparent electrode layer below and covering the second conductivity type semiconductor layer; a first reflective electrode layer contacting a lower surface of the first conductivity type substrate layer and extending in a horizontal direction; a second reflective electrode layer contacting a lower surface of the transparent electrode layer and extending in a horizontal direction; an upper insulating layer surrounding the first conductivity type substrate layer; a first contact electrode penetrating the upper insulating layer and contacting the first reflective electrode layer; and a second contact electrode penetrating the upper insulating layer and contacting the second reflective electrode layer. The vertical horizontal level of each of the uppermost surfaces of the first contact electrode and the second contact electrode is higher than the vertical horizontal level of the uppermost surface of the first conductivity type substrate layer in the vertical direction, and the vertical horizontal level of each of the lowermost surfaces of the first contact electrode and the second contact electrode is equal to or lower than the vertical horizontal level of the lowermost surface of the first conductivity type substrate layer in the vertical direction, and the second contact electrode is connected to the transistor via an interconnect. Attached Figure Description

[0009] Various embodiments will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which: Figure 1 This is a plan view showing a light-emitting device according to an embodiment; Figure 2 It is along Figure 1 A cross-sectional view taken by line A-A'; Figure 3 It is along Figure 1 A cross-sectional view taken from line B-B'; Figures 4 to 9 This is a diagram illustrating a light-emitting device according to some embodiments; Figure 10 This is a cross-sectional view showing a display device according to an embodiment; Figures 11 to 20 This is a cross-sectional view illustrating the sequential process of a method for manufacturing a light-emitting device according to an embodiment; Figures 21 to 32 This is a cross-sectional view illustrating the sequential process of a method for manufacturing a light-emitting device according to some embodiments; Figure 33 This is a block diagram of an electronic device including a light-emitting device or a display device according to an embodiment; Figure 34 This is a diagram illustrating a wearable device according to an embodiment, which is an electronic device including a light-emitting device or a display device; Figure 35 This is an illustration of augmented reality glasses as an electronic device including a light-emitting device or a display device, according to an embodiment; Figure 36 This is a diagram illustrating a mobile device as an electronic device including a light-emitting device or a display device according to an embodiment; Figure 37 This is a diagram illustrating a head-up display device according to an embodiment, which is an electronic device including a light-emitting device or a display device; and Figure 38 This is an illustration of a large signboard as an electronic device including a light-emitting device or a display device, according to an embodiment. Detailed Implementation

[0010] Various embodiments will be described in detail below with reference to the accompanying drawings.

[0011] For ease of understanding, terms such as upper / lower surface, above / below, top / bottom, etc., are used based on the orientation shown in the accompanying drawings. Therefore, even the same surface may be referred to differently as upper and lower surfaces depending on the orientation shown in the drawings.

[0012] Figure 1 This is a plan view showing the light-emitting device 10 according to an embodiment. Figure 2 It is along Figure 1 A cross-sectional view taken from line A-A'. Figure 3 It is along Figure 1 The cross-sectional view taken by line B-B'.

[0013] Refer to together Figures 1 to 3 The light-emitting device 10 may include a first conductivity type substrate 102 and a plurality of light-emitting structures 110 disposed under the main surface 102M of the first conductivity type substrate 102.

[0014] The light-emitting structure 110 may be included below the main surface 102M of the first conductivity type substrate layer 102 along a vertical direction perpendicular to the main surface 102M (e.g., Figure 1 The first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 are stacked sequentially in the Z direction (the same applies below).

[0015] The light-emitting structure 110 may include a miniature light-emitting diode (LED). In some embodiments, the light-emitting structure 110 may include a miniature LED that emits at least one light selected from red, green, and blue. As used herein, the term miniature LED may refer to light emitted in the horizontal direction (e.g., Figure 1 LEDs with a width of approximately 100 μm or less in the X or Y direction (the same applies below).

[0016] The light-emitting structure 110 can be configured to emit light having a wavelength λ selected in the range of about 400 nm to about 700 nm. The light-emitting structure 110 may include a first light-emitting structure 110R, a second light-emitting structure 110G, and a third light-emitting structure 110B that emit light with different wavelengths (see [link to documentation]). Figure 1 ).

[0017] The first luminescent structure 110R may be configured to emit light having a first wavelength selected in the range of about 580 nm to about 700 nm. The light having the first wavelength may be red light. Here, the wavelength range of red light may refer to a wavelength range of about 580 nm to less than about 700 nm, and at least one peak of the emission spectrum may exist in the wavelength range of red light.

[0018] The second luminescent structure 110G can be configured to emit light having a second wavelength selected in the range of about 490 nm to about 580 nm. The light having the second wavelength can be green light. Here, the wavelength range of green light can refer to a wavelength range of about 490 nm or greater and less than about 580 nm, and at least one peak of the emission spectrum can exist in the wavelength range of green light.

[0019] The third emitting structure 110B can be configured to emit light having a third wavelength selected in the range of about 400 nm to about 490 nm. The third wavelength light can be blue light. Here, the wavelength range of blue light can refer to a wavelength range of about 400 nm or greater and less than about 490 nm, and at least one peak of the emission spectrum can be present in the wavelength range of blue light.

[0020] The first conductivity type substrate layer 102, the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may each include an epitaxial nitride semiconductor layer. The first conductivity type substrate layer 102 and the first conductivity type semiconductor layer 112 may each include a nitride semiconductor layer doped with a dopant of the same conductivity type (e.g., an n-type dopant), and the average doping concentration of the first conductivity type substrate layer 102 may be greater than the average doping concentration of the first conductivity type semiconductor layer 112. The first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116 may each include a single layer or multiple layers, wherein the multiple layers include multiple layers with different dopant concentrations and different compositions.

[0021] In the light-emitting structure 110, the first conductivity type semiconductor layer 112 can be integrally connected to the first conductivity type substrate layer 102 via the main surface 102M. For example, note that a dashed line is shown at the main surface 102M. However, this dashed line is only for ease of explanation, and when the first conductivity type semiconductor layer 112 is integrally connected to the first conductivity type substrate layer 102, the line will actually not exist / be invisible. The width of the first conductivity type substrate layer 102 in the horizontal direction may be greater than the width of the light-emitting structure 110 in the horizontal direction.

[0022] In the light-emitting device 10, the upper surface of the first conductivity type substrate 102 is an uneven surface 102P, and a portion of the uneven surface 102P may include a groove 102R having a depth and a flat bottom surface. The depth may be predefined. The uneven surface 102P of the first conductivity type substrate 102 may be the result of texturing processing to increase luminous efficiency, and the groove 102R of the first conductivity type substrate 102 may be the result of reducing the resistance of the first contact electrode 192 as described below. However, in some embodiments, the uneven surface 102P and / or the groove 102R may be omitted from the upper surface of the first conductivity type substrate 102.

[0023] In some embodiments, the first conductivity type substrate layer 102 and the first conductivity type semiconductor layer 112 may comprise the same material. For example, the first conductivity type substrate layer 102 and the first conductivity type semiconductor layer 112 may comprise n-type gallium nitride (n-GaN).

[0024] The first conductivity type semiconductor layer 112 may include an n-type superlattice structure. For example, the first conductivity type semiconductor layer 112 may include an InGaN / GaN superlattice structure. In this case, the first conductivity type semiconductor layer 112 may have a superlattice structure in which InGaN films and GaN films are stacked alternately. In the first conductivity type semiconductor layer 112, the superlattice structure may include a pair structure of InGaN films and GaN films with about 10 to about 50 periods.

[0025] In some embodiments, the first conductivity type semiconductor layer 112 may include having In x Al y Ga 1-x-y A nitride semiconductor with a composition of N (0≤x<1, 0≤y<1, 0≤x+y<1). In some embodiments, the first conductivity type semiconductor layer 112 may include n-type gallium nitride (n-GaN) doped with silicon (Si), germanium (Ge), or carbon (C). In some embodiments, the first conductivity type semiconductor layer 112 may include a semiconductor layer of aluminum indium gallium phosphide (AlInGaP) or aluminum indium gallium arsenide (AlInGaAs).

[0026] In the light-emitting structure 110, the active layer 114 can be configured to emit light with a specific energy through the recombination of electrons and holes. The active layer 114 may have a single quantum well structure or a multi-quantum well structure in which quantum barrier layers and quantum well layers are arranged alternately. In some embodiments, the active layer 114 may have a single quantum well structure or a multi-quantum well structure comprising a pair of structures with one to fifteen cycles, the pair of structures including a quantum barrier layer and a quantum well layer.

[0027] In some embodiments, the active layer 114 may include a quantum well layer and a quantum barrier layer comprising a compound semiconductor. For example, the active layer 114 may include any pair of structures selected from InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, and InGaN / InAlGaN.

[0028] In some embodiments, the quantum well layer and the quantum barrier layer may include In with different compositions. x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) layers. For example, a quantum well layer may include undoped In. x Ga 1-x The N (0 < x < 1) layer may include an undoped GaN layer or a GaN layer doped with silicon (Si).

[0029] In some embodiments, when the quantum well layer included in the active layer 114 is In x Ga 1-x When there are N (0 < x < 1) layers, the band gap energy in the active layer 114 can be controlled according to the indium (In) content ratio in the quantum well layer, thereby adjusting the emission wavelength band.

[0030] In the light-emitting structure 110, the second conductivity type semiconductor layer 116 may include a nitride semiconductor doped with a dopant opposite to that doped in the first conductivity type semiconductor layer 112 (e.g., a p-type dopant). In some embodiments, the second conductivity type semiconductor layer 116 may include an In... x Al y Ga 1-x-y Nitride semiconductors with a composition of N (0 ≤ x < 1, 0 ≤ y < 1, 0 ≤ x + y < 1). For example, the second conductivity type semiconductor layer 116 may include p-type gallium nitride (p-GaN) doped with magnesium (Mg) or zinc (Zn). In some embodiments, the second conductivity type semiconductor layer 116 may include a semiconductor layer of aluminum indium gallium phosphide (AlInGaP) or aluminum indium gallium arsenide (AlInGaAs).

[0031] The transparent electrode layer 130 may cover the second conductivity type semiconductor layer 116 from below. The transparent electrode layer 130 may be in contact with the second conductivity type semiconductor layer 116 and may be spaced apart from the active layer 114 in the vertical direction, with the second conductivity type semiconductor layer 116 located between the transparent electrode layer 130 and the active layer 114.

[0032] The transparent electrode layer 130 may have the same or similar width in the horizontal direction as the light-emitting structure 110. The transparent electrode layer 130 may include a transparent conductive material. In some embodiments, the transparent electrode layer 130 may include indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc magnesium oxide (ZnMgO), or combinations thereof.

[0033] The sidewalls of each of the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 included in the light-emitting structure 110, as well as the sidewalls of the transparent electrode layer 130, may be covered with a reflective structure 150. The reflective structure 150 may include a distributed Bragg reflector. The reflective structure 150 may have a structure in which multiple insulating layers are sequentially stacked.

[0034] The reflective structure 150 can play a role in controlling light distribution by reflecting light traveling from the interior of the light-emitting structure 110 to the sidewalls. Because the reflective structure 150 includes a distributed Bragg reflector layer, it can be used as a bandpass filter to suppress the transmission of light with specific wavelengths, and the light distribution can be effectively controlled due to the difference in transmittance based on the angle of incidence. The reflective structure 150 can increase the intensity of light emitted from a specific region by utilizing the difference in transmittance based on the angle of incidence of light emitted from the light-emitting structure 110.

[0035] The reflective electrode layer 170 can penetrate the reflective structure 150 in the vertical direction and contact the transparent electrode layer 130, and can be spaced apart from the second conductivity type semiconductor layer 116 in the vertical direction. The transparent electrode layer 130 is located between the reflective electrode layer 170 and the second conductivity type semiconductor layer 116.

[0036] The reflective electrode layer 170 may include, but is not limited to, silver (Ag), nickel (Ni), aluminum (Al), chromium (Cr), rhodium (Rh), iridium (Ir), palladium (Pd), ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), or combinations thereof, which have the property of reflecting light.

[0037] The lower insulating layer 160 may cover the reflective structure 150 and the reflective electrode layer 170 from below, and may be located in the lower part of the light-emitting device 10 in the vertical direction. Depending on the location where the lower insulating layer 160 is formed, the lower insulating layer 160 may include a first lower insulating layer 162, a second lower insulating layer 164, and a third lower insulating layer 166.

[0038] In some embodiments, the lower insulating layer 160 may include silicon oxide, silicon nitride, or a combination thereof. In some embodiments, the lower insulating layer 160 may include tetraethyl orthosilicate (TEOS), undoped silicate glass (USG), phosphosilicate glass (PSG), borosilicate glass (BSG), borophosphosilicate glass (BPSG), fluoride silicate glass (FSG), spin-coated glass (SOG), polysilazane, or a combination thereof.

[0039] The reflective electrode layer 170 may include a portion that contacts the lower insulating layer 160 and a portion that contacts the reflective structure 150. The number of reflective electrode layers 170 may be the same as the number of light-emitting structures 110.

[0040] The upper insulating layer 180 may vertically cover the reflective structure 150 and the reflective electrode layer 170 from above, and surround the side surface of the first conductivity type substrate layer 102. The upper insulating layer 180 may include a through-hole 180H that penetrates the upper insulating layer 180 and exposes the upper surface of the reflective electrode layer 170.

[0041] In some embodiments, the upper insulating layer 180 may include the same or similar material as the material constituting the lower insulating layer 160 described above.

[0042] The first contact electrode 192 may cover a portion of the upper surface of the first conductivity type substrate 102 and a portion of the upper surface of the upper insulating layer 180 (e.g., in...). Figure 3 (As best seen in the image). That is, the first contact electrode 192 can be conformally formed along the uneven surface 102P and the groove 102R formed on the upper surface of the first conductivity type substrate layer 102. Therefore, the first contact electrode 192 can be electrically connected to the first conductivity type semiconductor layer 112 through the first conductivity type substrate layer 102.

[0043] The second contact electrode 194 may cover a portion of the upper surface of the upper insulating layer 180 and the inner wall of the through hole 180H. That is, the second contact electrode 194 may contact the upper surface of the reflective electrode layer 170 through the through hole 180H. Therefore, the second contact electrode 194 can be electrically connected to the second conductivity type semiconductor layer 116 through the reflective electrode layer 170 and the transparent electrode layer 130.

[0044] In some embodiments, the first contact electrode 192 and the second contact electrode 194 may comprise the same material. For example, each of the first contact electrode 192 and the second contact electrode 194 may comprise a transparent electrode material.

[0045] In some embodiments, the first contact electrode 192 and the second contact electrode 194 may comprise different materials. For example, the first contact electrode 192 may comprise a transparent electrode material, and the second contact electrode 194 may comprise a reflective electrode material.

[0046] In some embodiments, a plurality of second contact electrodes 194 may be provided to correspond to the first to third light-emitting structures 110R, 110G, and 110B. In some embodiments, the first contact electrode 192 may be a common electrode corresponding to all of the first to third light-emitting structures 110R, 110G, and 110B.

[0047] In the light-emitting device 10, when in a planar view (e.g., Figure 1 When viewed in the image, the first contact electrode 192 can cover the entirety of the first to third light-emitting structures 110R, 110G, and 110B, and the plurality of second contact electrodes 194R, 194G, and 194B can be spaced apart from each other and arranged to face at least one side surface of the respective first to third light-emitting structures 110R, 110G, and 110B. For example, in some embodiments, the plurality of second contact electrodes 194R, 194G, and 194B can be respectively arranged at the corners of the first conductivity type substrate layer 102, such as... Figure 1 As shown in the example.

[0048] In the light-emitting device 10, when in a cross-sectional view (e.g., Figure 2 When viewed in the image, the uppermost surface of the second contact electrode 194 may be higher in the vertical direction than the uppermost surface of the first conductive type substrate 102, and the lowermost surface of the second contact electrode 194 may be lower in the vertical direction than the lowermost surface of the first conductive type substrate 102. In other words, the second contact electrode 194 may be arranged horizontally next to the first conductive type substrate 102, but the length of the second contact electrode 194 in the vertical direction may be greater than the length of the first conductive type substrate 102 in the vertical direction.

[0049] In the light-emitting device 10, when in a cross-sectional view (e.g., Figure 3When observed in the light-emitting device 10, the direction facing the uppermost surface of each of the first contact electrode 192 and the second contact electrode 194 is the same as the direction facing the light-emitting surface. In other words, the vertical level of the uppermost surface of each of the first contact electrode 192 and the second contact electrode 194 is the same, and the vertical level of each of the first contact electrode 192 and the second contact electrode 194 is higher than the vertical level of the uppermost surface of the first conductivity type substrate layer 102. These features can be features of various embodiments obtained by the manufacturing method of the light-emitting device 10 described below.

[0050] In the light-emitting device 10, the first contact electrode 192 connected to the first conductivity type semiconductor layer 112 and the second contact electrode 194 connected to the second conductivity type semiconductor layer 116 are formed in the same manufacturing process, and both the first contact electrode 192 and the second contact electrode 194 are formed in the same direction (the direction of the light-emitting surface), thereby improving the light extraction efficiency in the ultra-small light-emitting device (i.e., micro LED).

[0051] Figures 4 to 9 This is a schematic diagram of a light-emitting device according to some embodiments.

[0052] In detail, Figure 4 This is a plan view of the light-emitting device 20 according to an embodiment, and Figure 5 It is along Figure 4 The cross-sectional view taken from line C-C'. Figure 6 This is a plan view of the light-emitting device 30 according to an embodiment, and Figure 7 It is along Figure 6 The cross-sectional view taken by line D-D'. Figure 8 This is a plan view of the light-emitting device 40 according to an embodiment, and Figure 9 It is along Figure 8 The cross-sectional view taken from line E-E'.

[0053] Most of the components included in the light-emitting devices 20, 30 and 40 described below and the materials forming these components are consistent with the above reference. Figures 1 to 3 The descriptions are essentially the same or similar. Figures 4 to 8 In, the same components are used with Figures 1 to 3 The same reference numerals are used in the reference numerals, and repeated descriptions of them are omitted for the sake of brevity. Therefore, for ease of description, the differences from the light-emitting device 10 described above will be mainly described.

[0054] Refer to together Figure 4 and Figure 5 The light-emitting device 20 may include a first conductivity type substrate 102 and a plurality of light-emitting structures 110 disposed below the main surface 102M of the first conductivity type substrate 102.

[0055] The light-emitting device 20 may include a first reflective electrode layer 172 that penetrates the reflective structure 150 in the vertical direction and contacts the main surface 102M of the first conductivity type substrate layer 102, and a second reflective electrode layer 174 that penetrates the reflective structure 150 in the vertical direction and contacts the transparent electrode layer 130.

[0056] The light-emitting device 20 may include an upper insulating layer 180 that covers the reflective structure 150, the first reflective electrode layer 172, and the second reflective electrode layer 174 from above and surrounds the side surface of the first conductivity type substrate layer 102. The upper insulating layer 180 may include a first through-hole 182H that penetrates the upper insulating layer 180 and exposes the upper surface of the first reflective electrode layer 172, and a second through-hole 184H that penetrates the upper insulating layer 180 and exposes the upper surface of the second reflective electrode layer 174.

[0057] The first contact electrode 192A may cover a portion of the upper surface of the upper insulating layer 180 and the inner wall of the first through-hole 182H. That is, the first contact electrode 192A may pass through the first through-hole 182H to contact the upper surface of the first reflective electrode layer 172. Therefore, the first contact electrode 192A can be electrically connected to the first conductive type semiconductor layer 112 through the first reflective electrode layer 172 and the first conductive type substrate layer 102.

[0058] The second contact electrode 194A may cover a portion of the upper surface of the upper insulating layer 180 and the inner wall of the second through-hole 184H. That is, the second contact electrode 194A may contact the upper surface of the second reflective electrode layer 174 through the second through-hole 184H. Therefore, the second contact electrode 194A can be electrically connected to the second conductivity type semiconductor layer 116 through the second reflective electrode layer 174 and the transparent electrode layer 130.

[0059] In some embodiments, the first contact electrode 192A and the second contact electrode 194A may comprise the same material. That is, each of the first contact electrode 192A and the second contact electrode 194A may comprise a reflective electrode material.

[0060] In the light-emitting device 20, when in a planar view (e.g., Figure 4 When viewed in the image, the first contact electrode 192A and the plurality of second contact electrodes 194AR, 194AG and 194AB can be located at the corners of the first conductivity type substrate layer 102.

[0061] In the light-emitting device 20, when in a cross-sectional view (e.g., Figure 5When viewed in the image, the uppermost surface of each of the first contact electrode 192A and the second contact electrode 194A may be higher in the vertical direction than the uppermost surface of the first conductive type substrate 102, and the lowermost surface of each of the first contact electrode 192A and the second contact electrode 194A may be equal to or lower in the vertical direction than the lowermost surface of the first conductive type substrate 102. In other words, each of the first contact electrode 192A and the second contact electrode 194A is arranged next to the first conductive type substrate 102, but the vertical length of each of the first contact electrode 192A and the second contact electrode 194A may be greater than the vertical length of the first conductive type substrate 102.

[0062] In the light-emitting device 20, a first contact electrode 192A connected to a first conductivity type semiconductor layer 112 and a second contact electrode 194A connected to a second conductivity type semiconductor layer 116 are formed during the same manufacturing process. The first contact electrode 192A and the second contact electrode 194A are both formed in the same direction (in the direction of the light-emitting surface), and both the first contact electrode 192A and the second contact electrode 194A include reflective electrode material, thereby improving the light extraction efficiency in the ultra-small light-emitting device (i.e., micro LED).

[0063] Refer to together Figure 6 and Figure 7 The light-emitting device 30 may include a first conductivity type substrate 102 and a light-emitting structure 110A located below the main surface 102M of the first conductivity type substrate 102.

[0064] In the light-emitting device 30, the light-emitting structure 110A may include a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 that are sequentially stacked in a vertical direction perpendicular to the main surface 102M of the first conductivity type substrate layer 102.

[0065] The light-emitting device 30 may include a single light-emitting structure 110A that emits light having a wavelength. The light-emitting structure 110A may be configured to emit light having a wavelength λ in the range of about 400 nm to about 700 nm.

[0066] In some embodiments, the light-emitting structure 110A may be configured to emit red light having a wavelength in the range of about 580 nm to about 700 nm. In some embodiments, the light-emitting structure 110A may be configured to emit green light having a wavelength in the range of about 490 nm to about 580 nm. In some embodiments, the light-emitting structure 110A may be configured to emit blue light having a wavelength in the range of about 400 nm to about 490 nm.

[0067] In some embodiments, the first contact electrode 192 and the second contact electrode 194 may comprise the same material. That is, each of the first contact electrode 192 and the second contact electrode 194 may comprise a transparent electrode material.

[0068] In the light-emitting device 30, a first contact electrode 192 connected to a first conductivity type semiconductor layer 112 and a second contact electrode 194 connected to a second conductivity type semiconductor layer 116 are formed during the same manufacturing process, and both the first contact electrode 192 and the second contact electrode 194 are formed in the same direction (the direction of the light-emitting surface), thereby improving the light extraction efficiency in an ultra-small light-emitting device (i.e., a micro LED) that emits one of red, green and blue.

[0069] Refer to together Figure 8 and Figure 9 The light-emitting device 40 may include a first conductivity type substrate 102 and a light-emitting structure 110A located below the main surface 102M of the first conductivity type substrate 102.

[0070] In the light-emitting device 40, the light-emitting structure 110A may include a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 that are sequentially stacked in a vertical direction perpendicular to the main surface 102M of the first conductivity type substrate layer 102.

[0071] The light-emitting device 40 may include a single light-emitting structure 110A that emits light having a wavelength. The light-emitting structure 110A may be configured to emit light having a wavelength λ in the range of about 400 nm to about 700 nm.

[0072] In some embodiments, the light-emitting structure 110A may be configured to emit red light having a wavelength in the range of about 580 nm to about 700 nm. In some embodiments, the light-emitting structure 110A may be configured to emit green light having a wavelength in the range of about 490 nm to about 580 nm. In some embodiments, the light-emitting structure 110A may be configured to emit blue light having a wavelength in the range of about 400 nm to about 490 nm.

[0073] The light-emitting device 40 may include a first reflective electrode layer 172 that penetrates the reflective structure 150 in the vertical direction and contacts the main surface 102M of the first conductivity type substrate layer 102, and a second reflective electrode layer 174 that penetrates the reflective structure 150 in the vertical direction and contacts the transparent electrode layer 130.

[0074] The light-emitting device 40 may include an upper insulating layer 180 that covers the reflective structure 150, the first reflective electrode layer 172, and the second reflective electrode layer 174 from above and surrounds the side surface of the first conductivity type substrate layer 102. The upper insulating layer 180 may include a first through-hole 182H that penetrates the upper insulating layer 180 and exposes the upper surface of the first reflective electrode layer 172, and a second through-hole 184H that penetrates the upper insulating layer 180 and exposes the upper surface of the second reflective electrode layer 174.

[0075] The first contact electrode 192A can be positioned to cover a portion of the upper surface of the upper insulating layer 180 and the inner wall of the first through-hole 182H. That is, the first contact electrode 192A can contact the upper surface of the first reflective electrode layer 172 through the first through-hole 182H. Therefore, the first contact electrode 192A can be electrically connected to the first conductive type semiconductor layer 112 through the first reflective electrode layer 172 and the first conductive type substrate layer 102.

[0076] The second contact electrode 194A can be positioned to cover a portion of the upper surface of the upper insulating layer 180 and the inner wall of the second through-hole 184H. That is, the second contact electrode 194A can contact the upper surface of the second reflective electrode layer 174 through the second through-hole 184H. Therefore, the second contact electrode 194A can be electrically connected to the second conductivity type semiconductor layer 116 through the second reflective electrode layer 174 and the transparent electrode layer 130.

[0077] In some embodiments, the first contact electrode 192A and the second contact electrode 194A may comprise the same material. That is, each of the first contact electrode 192A and the second contact electrode 194A may comprise a reflective electrode material.

[0078] In the light-emitting device 40, a first contact electrode 192A connected to a first conductivity type semiconductor layer 112 and a second contact electrode 194A connected to a second conductivity type semiconductor layer 116 are formed during the same manufacturing process. The first contact electrode 192A and the second contact electrode 194A are both formed in the same direction (in the direction of the light-emitting surface), and both the first contact electrode 192A and the second contact electrode 194A include reflective electrode material, thereby improving the light extraction efficiency in an ultra-small light-emitting device (i.e., a micro LED) that emits one of red, green, and blue light.

[0079] Figure 10 This is a cross-sectional view showing a display device 1000 according to an embodiment.

[0080] Reference Figure 10 The display device 1000 may include a light-emitting device 10 and a circuit board 200 on which the light-emitting device 10 is mounted.

[0081] The light-emitting device 10 is substantially the same as or similar to the light-emitting device described above. Figure 10 In, the same components are used with Figures 1 to 3 The same reference numerals are used throughout, and repeated descriptions thereof are omitted for brevity. For ease of description, light-emitting device 10 is shown; however, in various embodiments, display device 1000 may include any of the light-emitting devices 20, 30, and 40 described above instead of light-emitting device 10. Light-emitting device 10 may be mounted and bonded to circuit board 200 using adhesive material 310.

[0082] The circuit board 200 may be a driver circuit board including transistors TR. In some embodiments, the circuit board 200 may include an application-specific integrated circuit (ASIC) with driver circuitry. In some embodiments, the circuit board 200 may include a flexible substrate. In this case, the display device 1000 may be implemented as a rollable, stretchable, or bendable display device.

[0083] The circuit board 200 may include a semiconductor substrate 210, a driving circuit formed on the semiconductor substrate 210 and including a transistor TR, an interconnect portion 226 electrically connected to the transistor TR, and an interconnect line 228 connected to the interconnect portion 226.

[0084] Semiconductor substrate 210 may include an impurity region forming the source / drain region SD of transistor TR. Semiconductor substrate 210 may include a through electrode 224 (such as a through-silicon via (TSV)) connected to transistor TR, and a substrate interconnect 222 connected to the through electrode 224.

[0085] The circuit board 200 may include a first insulating layer 212 covering the transistor TR, interconnect portion 226 and interconnect line 228 that constitute the driving circuit.

[0086] The circuit board 200 may also include a second insulating layer 214 on the first insulating layer 212, a first conductor 232 located within the second insulating layer 214, and a second conductor 234 that penetrates the second insulating layer 214 and is connected to the interconnect 228.

[0087] The display device 1000 may include a peripheral insulating layer 320 surrounding the periphery of the light-emitting device 10 and a second insulating layer 214 of the circuit board 200, and adhesive material 310 on the first conductor 232 and the second conductor 234.

[0088] The display device 1000 may include a first connecting line 332, which extends horizontally through the outer insulating layer 320 and is connected to the first wire 232 and the first contact electrode 192 of the light-emitting device 10.

[0089] The display device 1000 may include a second connecting line 334, which extends horizontally through the peripheral insulating layer 320 and is connected to the second wire 234 and the second contact electrode 194 of the light-emitting device 10.

[0090] In the display device 1000, each of the second contact electrodes 194R, 194G and 194B of the light-emitting device 10 can be connected to the corresponding transistor TR via the second connection line 334 and the second wire 234.

[0091] Because the display device 1000 includes a first connecting line 332 connected to the first contact electrode 192 and a second connecting line 334 connected to the second contact electrode 194 in the same direction (direction of the light-emitting surface) of the light-emitting device 10, the light extraction efficiency of the ultra-small light-emitting device (i.e., micro LED) included therein can be improved.

[0092] Figures 11 to 20 This is a cross-sectional view illustrating the sequential process of a method for manufacturing a light-emitting device according to an embodiment.

[0093] In some embodiments, where implementation is otherwise feasible, a particular process sequence may be performed in a different order than that described. For example, two processes described sequentially may be performed substantially simultaneously, or they may be performed in the reverse order described.

[0094] Reference Figure 11 A first conductivity type substrate layer 102, a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 can be sequentially formed on the growth substrate 100, and a transparent electrode layer 130 and a first lower insulating layer 162 can be formed on the second conductivity type semiconductor layer 116.

[0095] Next, a portion of each of the first lower insulating layer 162, transparent electrode layer 130, second conductive type semiconductor layer 116, active layer 114, and first conductive type semiconductor layer 112 is etched using an etching process that uses a mask pattern as an etching mask, such that a plurality of light-emitting structures 110 spaced apart from each other, a plurality of transparent electrode layers 130 covering the plurality of light-emitting structures 110, and a plurality of first lower insulating layers 162 can be retained on the first conductive type substrate layer 102.

[0096] Reference Figure 12 ,exist Figure 11 In the resulting structure, a reflective structure 150 and a second lower insulating layer 164 can be formed to conformally cover the surface of each of the first conductive type substrate layer 102, the plurality of light-emitting structures 110, the plurality of transparent electrode layers 130 and the plurality of first lower insulating layers 162.

[0097] Reference Figure 13 A portion of each of the plurality of first lower insulating layers 162, reflective structures 150, and second lower insulating layers 164 can be etched, such that in Figure 12 The resulting structure exposes the upper surface of multiple transparent electrode layers 130 to form multiple openings OP.

[0098] Reference Figure 14 ,exist Figure 13 In the resulting structure, a reflective electrode layer 170 can be formed to conformally cover a plurality of openings OP of a plurality of transparent electrode layers 130, as well as a reflective structure 150 and a second lower insulating layer 164 surrounding the openings OP.

[0099] Multiple reflective electrode layers 170 may be formed to correspond to multiple light-emitting structures 110. The multiple reflective electrode layers 170 are formed to conformally cover multiple openings OP and a second lower insulating layer 164, thereby being electrically connected to multiple transparent electrode layers 130, but may be cut off between the light-emitting structures 110.

[0100] Reference Figure 15 ,exist Figure 14 In the resulting structure, a third lower insulating layer 166 can be formed to cover the reflective electrode layer 170 and the second lower insulating layer 164. The third lower insulating layer 166 can be formed to have a flat upper surface.

[0101] Reference Figure 16 ,exist Figure 15 In the resulting structure, an adhesive layer BL can be formed on the upper surface of the third lower insulating layer 166, and a carrier substrate 100S can be attached to the adhesive layer BL.

[0102] Next, the carrier substrate 100S can be flipped so that it faces downward in the vertical direction, so that the first conductive type substrate layer 102 can be placed facing upward.

[0103] Reference Figure 17 , can be Figure 16 The upper surface of the first conductive type substrate 102 of the obtained structure is textured to form an uneven surface 102P.

[0104] Next, a groove 102R with a specific depth and a flat bottom surface can be formed in a portion of the uneven surface 102P of the first conductivity type substrate layer 102. The specific depth of the groove 102R can be greater than the length of the uneven surface 102P from peak to valley in the vertical direction. The groove 102R can be formed by a dry etching process, and therefore can have a tapered shape with a width that narrows downwards.

[0105] Reference Figure 18 ,exist Figure 17In the resulting structure, the outer portion of the first conductivity type substrate layer 102 can be removed to expose the reflective electrode layer 170, and an upper insulating layer 180 can be formed to cover the exposed reflective electrode layer 170 and a portion of the first conductivity type substrate layer 102.

[0106] Next, a through-hole 180H can be formed that penetrates the upper insulating layer 180 and exposes the upper surface of the reflective electrode layer 170. The through-hole 180H can be formed by a dry etching process and therefore can have a tapered shape with a width that tapers downwards.

[0107] Reference Figure 19 , can Figure 18 A contact forming layer 190 is conformally formed on the upper surface of the upper insulating layer 180, the inner wall of the through hole 180H, the upper surface of the exposed reflective electrode layer 170, and the upper surface (uneven surface 102P and groove 102R) of the first conductivity type substrate layer 102. That is, the contact forming layer 190 can be formed to cover all the upwardly exposed surfaces.

[0108] Reference Figure 20 ,exist Figure 19 In the resulting structure, a portion of the contact forming layer 190 can be etched using an etching process that employs a mask pattern as the etching mask to form the first contact electrode 192 and the second contact electrode 194, respectively. Therefore, the first contact electrode 192 and the second contact electrode 194 may comprise the same material.

[0109] However, in the case where one of the first contact electrode 192 and the second contact electrode 194 is formed first and the other is formed subsequently, the first contact electrode 192 and the second contact electrode 194 may comprise different materials.

[0110] The first contact electrode 192 may be formed to cover a portion of the upper surface of the first conductivity type substrate layer 102 and a portion of the upper surface of the upper insulating layer 180. That is, the first contact electrode 192 may be conformally formed on the uneven surface 102P and the groove 102R formed on the upper surface of the first conductivity type substrate layer 102.

[0111] The second contact electrode 194 may be formed as a portion of the upper surface of the insulating layer 180 and the inner wall of the through hole 180H. That is, the second contact electrode 194 may pass through the through hole 180H to contact the upper surface of the reflective electrode layer 170.

[0112] Return to reference Figures 1 to 3 From Figure 20 The resulting structure is used to remove the adhesive layer BL and the carrier substrate 100S to manufacture the light-emitting device 10.

[0113] Figures 21 to 32This is a cross-sectional view illustrating the sequential process of a method for manufacturing a light-emitting device according to some embodiments.

[0114] For example, Figures 21 to 24 A portion of a method for manufacturing a light-emitting device 20 according to an embodiment is shown. Figures 25 to 28 A portion of a method for manufacturing a light-emitting device 30 according to an embodiment is shown. Figures 29 to 32 A portion of a method for manufacturing a light-emitting device 40 according to an embodiment is shown.

[0115] Reference Figure 21 A first conductivity type substrate layer 102, a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 are sequentially formed on the growth substrate 100, and a transparent electrode layer 130 and a first lower insulating layer 162 are formed on the second conductivity type semiconductor layer 116.

[0116] Next, a portion of each of the first lower insulating layer 162, transparent electrode layer 130, second conductivity type semiconductor layer 116, active layer 114, and first conductivity type semiconductor layer 112 is etched using an etching process that uses a mask pattern as an etching mask, such that a plurality of light-emitting structures 110, a plurality of transparent electrode layers 130 covering the light-emitting structures 110, and a plurality of first lower insulating layers 162 that are separated from each other on the first conductivity type substrate layer 102 can be retained.

[0117] Reference Figure 22 In the Figure 21 The resulting structure execution and Figure 12 and Figure 13 Following a process similar to that of the first reflective electrode layer 172 and the second reflective electrode layer 174 can be formed, wherein the first reflective electrode layer 172 is in contact with a portion of the main surface 102M of the first conductive type substrate layer 102, and the second reflective electrode layer 174 covers a plurality of openings OP of a plurality of transparent electrode layers 130 exposed, as well as a reflective structure 150 and a second lower insulating layer 164 around the openings OP.

[0118] Reference Figure 23 In the Figure 22 The resulting structure execution and Figures 15 to 17 After a process similar to that of the first conductive type substrate layer 102, the outer portion of the first conductive type substrate layer 102 can be removed to expose the first reflective electrode layer 172 and the second reflective electrode layer 174, and an upper insulating layer 180 can be formed to cover the exposed first reflective electrode layer 172 and the second reflective electrode layer 174.

[0119] Next, a first through-hole 182H can be formed to penetrate the upper insulating layer 180 and expose the upper surface of the first reflective electrode layer 172, and a second through-hole 184H can be formed to penetrate the upper insulating layer 180 and expose the upper surface of the second reflective electrode layer 174.

[0120] Reference Figure 24 ,exist Figure 23 In the resulting structure, a portion of the contact forming layer (not shown) can be etched using an etching process that employs a mask pattern as the etching mask to separately form the first contact electrode 192A and the second contact electrode 194A. Therefore, the first contact electrode 192A and the second contact electrode 194A may comprise the same material.

[0121] The first contact electrode 192A may be formed to cover the inner wall of the first through hole 182H and the upper surface of the first reflective electrode layer 172. The second contact electrode 194A may be formed to cover the inner wall of the second through hole 184H and the upper surface of the second reflective electrode layer 174.

[0122] Return to reference Figure 4 and Figure 5 From Figure 24 The resulting structure is used to remove the adhesive layer BL and the carrier substrate 100S to manufacture the light-emitting device 20.

[0123] Reference Figure 25 A first conductivity type substrate layer 102, a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 are sequentially formed on the growth substrate 100, and a transparent electrode layer 130 and a first lower insulating layer 162 are formed on the second conductivity type semiconductor layer 116.

[0124] Next, a portion of each of the first lower insulating layer 162, transparent electrode layer 130, second conductive type semiconductor layer 116, active layer 114, and first conductive type semiconductor layer 112 can be etched using an etching process that uses a mask pattern as an etching mask, such that a light-emitting structure 110A, a transparent electrode layer 130 covering a light-emitting structure 110A, and a first lower insulating layer 162 can remain on the first conductive type substrate layer 102.

[0125] Reference Figure 26 In the Figure 25 The resulting structure execution and Figure 12 and Figure 13 Following a process similar to that described above, an opening OP covering the exposed transparent electrode layer 130 and a reflective structure 150 surrounding the opening OP and a reflective electrode layer 170 of the second lower insulating layer 164 can be formed.

[0126] Reference Figure 27 In the Figure 26 The resulting structure execution and Figures 15 to 17 After a process similar to that of the first conductivity type substrate layer 102, the outer portion of the first conductivity type substrate layer 102 can be removed to expose the reflective electrode layer 170, and an upper insulating layer 180 can be formed to cover the exposed reflective electrode layer 170.

[0127] Next, a through hole 180H can be formed that penetrates the upper insulating layer 180 and exposes the upper surface of the reflective electrode layer 170.

[0128] Reference Figure 28 ,exist Figure 27 In the resulting structure, a portion of the contact forming layer (not shown) can be etched using an etching process that employs a mask pattern as an etching mask to form the first contact electrode 192 and the second contact electrode 194. Therefore, the first contact electrode 192 and the second contact electrode 194 may comprise the same material.

[0129] The first contact electrode 192 may be formed to cover most of the upper surface of the first conductivity type substrate layer 102 and a portion of the upper surface of the upper insulating layer 180. That is, the first contact electrode 192 may be conformally formed on the uneven surface 102P formed on the upper surface of the first conductivity type substrate layer 102.

[0130] The second contact electrode 194 may be formed to cover part of the upper surface of the insulating layer 180 and the inner wall of the through hole 180H. That is, the second contact electrode 194 may pass through the through hole 180H to contact the upper surface of the reflective electrode layer 170.

[0131] Return to reference Figure 6 and Figure 7 From Figure 28 The resulting structure is used to remove the adhesive layer BL and the carrier substrate 100S to manufacture the light-emitting device 30.

[0132] Reference Figure 29 A first conductivity type substrate layer 102, a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 are sequentially formed on the growth substrate 100, and a transparent electrode layer 130 and a first lower insulating layer 162 are formed on the second conductivity type semiconductor layer 116.

[0133] Next, a portion of each of the first lower insulating layer 162, transparent electrode layer 130, second conductive type semiconductor layer 116, active layer 114, and first conductive type semiconductor layer 112 is etched using an etching process that uses a mask pattern as an etching mask, such that a light-emitting structure 110A, a transparent electrode layer 130 covering a light-emitting structure 110A, and a first lower insulating layer 162 can be retained on the first conductive type substrate layer 102.

[0134] Reference Figure 30 In the Figure 29 The resulting structure execution and Figure 12 and Figure 13 Following a process similar to that of the first reflective electrode layer 172 and the second reflective electrode layer 174, the first reflective electrode layer 172 is in contact with a portion of the main surface 102M of the first conductive type substrate layer 102, and the second reflective electrode layer 174 covers the opening OP of the exposed transparent electrode layer 130 and the reflective structure 150 and the second lower insulating layer 164 surrounding the opening OP.

[0135] Reference Figure 31 In the Figure 30 The resulting structure execution and Figures 15 to 17 After a process similar to that of the first conductive type substrate layer 102, the outer portion of the first conductive type substrate layer 102 can be removed to expose the first reflective electrode layer 172 and the second reflective electrode layer 174, and an upper insulating layer 180 can be formed to cover the exposed first reflective electrode layer 172 and the second reflective electrode layer 174.

[0136] Next, a first through-hole 182H can be formed to penetrate the upper insulating layer 180 and expose the upper surface of the first reflective electrode layer 172, and a second through-hole 184H can be formed to penetrate the upper insulating layer 180 and expose the upper surface of the second reflective electrode layer 174.

[0137] Reference Figure 32 ,exist Figure 31 In the resulting structure, a portion of the contact forming layer (not shown) can be etched using an etching process that employs a mask pattern as the etching mask to separately form the first contact electrode 192A and the second contact electrode 194A. Therefore, the first contact electrode 192A and the second contact electrode 194A may comprise the same material.

[0138] The first contact electrode 192A may be formed to cover the inner wall of the first through hole 182H and the upper surface of the first reflective electrode layer 172. The second contact electrode 194A may be formed to cover the inner wall of the second through hole 184H and the upper surface of the second reflective electrode layer 174.

[0139] Return to reference Figure 8 and Figure 9 From Figure 32 The resulting structure is used to remove the adhesive layer BL and the carrier substrate 100S to manufacture the light-emitting device 40.

[0140] Figure 33 This is a block diagram of an electronic device 1101 including a light-emitting device or a display device according to an embodiment.

[0141] Reference Figure 33The electronic device 1101 can be installed within the network environment 1100.

[0142] In network environment 1100, electronic device 1101 can communicate with another electronic device 1102 via a first network 1198 (such as a short-range wireless communication network), or can communicate with another electronic device 1104 and / or server 1108 via a second network 1199 (such as a long-range wireless communication network). Electronic device 1101 can communicate with electronic device 1104 via server 1108.

[0143] Electronic device 1101 may include a processor 1120, a memory 1130, an input device 1150, an audio output device 1155, a display device 1160, an audio module 1170, a sensor module 1176, an interface 1177, a haptic module 1179, a camera module 1180, a power management module 1188, a battery 1189, a communication module 1190, a subscriber identification module 1196, and / or an antenna module 1197. Some of these components may be omitted from electronic device 1101, or other components may be added. Some of these components may be implemented as a single integrated circuit. For example, sensor module 1176 (such as a fingerprint sensor, iris sensor, or light sensor) may be embedded in the display device 1160 (such as a display).

[0144] Processor 1120 executes software (such as program 1140) to control one or more other components (such as hardware, software components, etc.) connected to processor 1120 of electronic device 1101 and performs various data processing or operations. As part of data processing or arithmetic operations, processor 1120 may load commands and / or data received from other components (such as sensor module 1176, communication module 1190, etc.) into volatile memory 1132, process the commands and / or data stored in volatile memory 1132, and store the resulting data in non-volatile memory 1134. Non-volatile memory 1134 includes internal memory 1136 and external memory 1138. Processor 1120 may include a main processor 1121 (central processing unit, application processor, etc.) and auxiliary processors 1123 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently or in conjunction with the main processor 1121. The auxiliary processor 1123 can use less power than the main processor 1121 and can perform specialized functions.

[0145] The auxiliary processor 1123 can control functions and / or states related to some components of the electronic device 1101 (such as the display device 1160, sensor module 1176, and communication module 1190) on behalf of the main processor 1121 when the main processor 1121 is inactive (sleep state), or it can control, together with the main processor 1121, some functions and / or states related to some components of the electronic device 1101 when the main processor 1121 is active (application execution state). The auxiliary processor 1123 (image signal processor, communication processor, etc.) can also be implemented as part of other functionally related components (camera module 1180, communication module 1190, etc.).

[0146] The memory 1130 may store various data required by the components of the electronic device 1101 (processor 1120, sensor module 1176, etc.). The data may include, for example, input data and / or output data for software (such as program 1140) and instructions associated with the software. The memory 1130 may include volatile memory 1132 and / or non-volatile memory 1134.

[0147] Program 1140 may be stored as software in memory 1130 and may include operating system 1142, middleware 1144 and / or application 1146.

[0148] Input device 1150 can receive commands and / or data from an external source (such as a user) of electronic device 1101 that will be used in components of electronic device 1101 (such as processor 1120). Input device 1150 may include a remote control, microphone, mouse, keyboard and / or digital pen (such as a stylus).

[0149] Audio output device 1155 can output audio signals to the outside of electronic device 1101. Audio output device 1155 may include a speaker and / or a receiver. The speaker can be used for general purposes (such as playing multimedia or recording), and the receiver can be used to receive incoming calls. The receiver may be integrated into the speaker or implemented as a separate, independent device.

[0150] Display device 1160 can visually provide information to the outside of electronic device 1101. Display device 1160 may include a display, holographic device, or projector, and control circuitry for controlling the corresponding device. Display device 1160 may include the features described above. Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device 1000. The display device 1160 may include touch circuitry configured to detect touch and / or sensor circuitry (such as a pressure sensor) configured to measure the intensity of the force generated by the touch.

[0151] Audio module 1170 can convert sound into electrical signals, or vice versa, convert electrical signals into sound. Audio module 1170 can acquire sound through input device 1150, or output sound through audio output device 1155 and / or through a speaker and / or headphones of another electronic device (such as electronic device 1102) directly or wirelessly connected to electronic device 1101.

[0152] Sensor module 1176 can detect the operating status (power, temperature, etc.) or external environmental status (user status, etc.) of electronic device 1101, and generate electrical signals and / or data corresponding to the detected status. Sensor module 1176 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0153] Interface 1177 may support one or more specified protocols that allow electronic device 1101 to connect directly or wirelessly to another electronic device (such as electronic device 1102). Interface 1177 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0154] Connection terminal 1178 may include a connector for physically connecting electronic device 1101 to another electronic device (such as electronic device 1102). Connection terminal 1178 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0155] The haptic module 1179 can convert electrical signals into mechanical stimuli (vibration, movement, etc.) or electrical stimuli that can be perceived by the user through touch or kinesthesia. The haptic module 1179 may include a motor, a piezoelectric element, and / or an electrical stimulation device.

[0156] Camera module 1180 can capture still images and video. Camera module 1180 may include a lens assembly comprising one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in camera module 1180 can collect light emitted from an object that is the target of image capture.

[0157] The power management module 1188 manages the power supplied to the electronic device 1101. The power management module 1188 may be implemented as part of a power management integrated circuit (PMIC).

[0158] Battery 1189 can power components of electronic device 1101. Battery 1189 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0159] Communication module 1190 supports the establishment of direct (wired) communication channels and / or wireless communication channels between electronic device 1101 and another electronic device (electronic device 1102, electronic device 1104, server 1108, etc.), and supports communication through the established communication channels. Communication module 1190 may include one or more communication processors that operate independently of processor 1120 (such as an application processor) and support direct and / or wireless communication. Communication module 1190 may include wireless communication module 1192 (cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS) communication module) and / or wired communication module 1194 (local area network (LAN) communication module, power line communication module, etc.). Any of these communication modules can communicate with other electronic devices via a first network 1198 (short-range communication network, such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 1199 (long-range communication network, such as cellular network, Internet, or computer network (LAN, WAN, etc.)). These different types of communication modules can be integrated into a single component (such as a single chip) or implemented as multiple separate components (multiple chips). The wireless communication module 1192 can use subscriber information (such as International Mobile Subscriber Identity (IMSI)) stored in the subscriber identification module 1196 to verify and authenticate electronic devices 1101 within communication networks (such as the first network 1198 and / or the second network 1199).

[0160] Antenna module 1197 can transmit signals and / or power to or receive signals and / or power from an external source, such as another electronic device. Antenna module 1197 may include a radiator comprising conductive patterns on a substrate, such as a PCB. Antenna module 1197 may include one or more antennas. When multiple antennas are included, communication module 1190 can select an antenna suitable for a communication method used in a communication network such as a first network 1198 and / or a second network 1199. Signals and / or power can be transmitted or received between communication module 1190 and other electronic devices via the selected antenna. In addition to antennas, other components, such as RFICs, may also be included as part of antenna module 1197.

[0161] Some components of electronic device 1101 can connect to each other and exchange signals (commands, data, etc.) through communication methods between peripheral devices (bus, general purpose input / output (GPIO), serial peripheral interface (SPI), mobile industrial processor interface (MIPI), etc.).

[0162] Commands or data can be sent or received between electronic device 1101 and external electronic device 1104 via server 1108 connected to the second network 1199. Other electronic devices 1102 and 1104 can be devices of the same or different types as electronic device 1101. All or part of the operations performed in electronic device 1101 can be performed in one or more of the other electronic devices 1102, 1104, and server 1108. For example, when electronic device 1101 needs to perform a function or service, it can request one or more other electronic devices to perform part or all of that function or service, instead of performing it itself. The one or more other electronic devices receiving the request can perform additional functions or services related to the request and send the execution results to electronic device 1101. For this purpose, cloud computing, distributed computing, and / or client-server computing technologies can be used.

[0163] Electronic device 1101 can be applied to various devices. Depending on the function of the device, various components of electronic device 1101 can be appropriately modified, and components suitable for performing the function of the device can be added. The application of electronic device 1101 is described below.

[0164] Figure 34 This is a diagram illustrating a wearable device as an electronic device including a light-emitting device or a display device according to an embodiment.

[0165] Reference Figure 34 The wearable display 1200 may include the above-mentioned references. Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device 1000. The wearable display device 1200 can be, for example, a smartwatch worn on the wrist. The wearable display 1200 can be described by referring to the above... Figure 33 The electronic device described is used to achieve this.

[0166] Figure 35 This is a diagram illustrating augmented reality glasses 1300, which is an electronic device including a light-emitting device or a display device, according to an embodiment.

[0167] Reference Figure 35 Augmented reality glasses (or virtual reality glasses) 1300 may include a projection system 1310 for forming an image and elements 1320 for guiding the image from the projection system 1310 to the user's eyes. The projection system 1310 may include elements described above. Figures 1 to 9 The light-emitting devices described are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device is 1000.

[0168] Figure 36This is a diagram illustrating a mobile device 1400, which is an electronic device including a light-emitting device or a display device according to an embodiment.

[0169] Reference Figure 36 The mobile device 1400 may include a display device 1410. The display device 1410 may include the components described above. Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The display device 1000 is described. The display device 1410 may have a foldable structure, for example, a multi-fold structure.

[0170] Figure 37 This is a diagram illustrating a head-up display device 1500, which is an electronic device including a light-emitting device or a display device according to an embodiment.

[0171] Reference Figure 37 The head-up display device 1500 for automobiles may include a display 1510 disposed in a region of the automobile and an optical path changing member 1520 that alters the optical path so that the driver can view an image generated in the display 1510. The display 1510 may include the features described above. Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device is 1000.

[0172] Figure 38 This is a diagram illustrating a large sign 1600, which is an electronic device including a light-emitting device or a display device according to an embodiment.

[0173] Reference Figure 38 Signage 1600 may include the above references Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device 1000. The sign 1600 can be used for outdoor advertising using a digital information display and can control the advertising content via a communication network, etc. The sign 1600 can, for example, be described above... Figure 33 The electronic device described is used to achieve this.

[0174] In some embodiments, in addition to the electronic devices described above, references to the above text may also be made to the electronic devices described above. Figures 1 to 9 The described light-emitting devices are 10, 20, 30, or 40, or as mentioned above. Figure 10 The described display device 1000 can also be applied to various products, such as rollable TVs and stretchable displays.

[0175] Although various embodiments have been specifically shown and described with reference to the accompanying drawings, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A light-emitting device, comprising: A light-emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer running vertically from top to bottom; A first conductivity type substrate layer is located on the light-emitting structure; A transparent electrode layer is located below and covers the second type of conductive semiconductor layer; A reflective electrode layer that contacts the transparent electrode layer and extends in the horizontal direction; An upper insulating layer surrounds the first conductivity type base layer; The first contact electrode is conformally disposed on the upper surface of the substrate layer of the first conductivity type; as well as The second contact electrode penetrates the upper insulating layer and contacts the reflective electrode layer. Wherein, the vertical horizontal level of each of the uppermost surfaces of the first contact electrode and the second contact electrode in the vertical direction is higher than the vertical horizontal level of the uppermost surface of the first conductivity type substrate layer in the vertical direction, and The vertical level of the lowest surface of the second contact electrode in the vertical direction is lower than the vertical level of the lowest surface of the first conductive type substrate layer in the vertical direction.

2. The light-emitting device as described in claim 1, wherein: The through-hole is formed to expose the upper surface of the reflective electrode layer through the upper insulating layer, and The second contact electrode is conformally formed on the inner wall of the through hole.

3. The light-emitting device as described in claim 1, wherein, The first contact electrode includes a portion extending along the upper surface of the substrate layer of the first conductivity type and the upper surface of the upper insulating layer.

4. The light-emitting device as described in claim 1, wherein, Each of the first contact electrode and the second contact electrode includes a transparent electrode.

5. The light-emitting device as described in claim 1, wherein, The horizontal width of the first conductive type substrate layer is greater than the horizontal width of the light-emitting structure.

6. The light-emitting device as claimed in claim 1, wherein: The upper surface of the first conductivity type substrate layer has an uneven structure. A portion of the uneven structure includes a groove with a certain depth and a flat bottom surface, and The first contact electrode is conformally formed on the uneven structure and the groove.

7. The light-emitting device as claimed in claim 1, wherein: The light-emitting structure is configured as a plurality of structures, and the plurality of light-emitting structures emit light of different wavelengths. The second contact electrode is configured as a plurality of electrodes, and the plurality of second contact electrodes respectively correspond to the plurality of light-emitting structures, and The first contact electrode is a common electrode that corresponds to all of the plurality of light-emitting structures.

8. The light-emitting device as claimed in claim 7, wherein: In the plan view, the first contact electrode covers the entirety of the plurality of light-emitting structures, and The plurality of second contact electrodes are spaced apart from the plurality of light-emitting structures, so as to face at least one side surface of the plurality of light-emitting structures respectively.

9. The light-emitting device as claimed in claim 1, wherein: The light-emitting structure is configured to emit light with a single wavelength, and The first contact electrode and the second contact electrode are respectively configured as a single first contact electrode and a single second contact electrode to correspond to the single light-emitting structure.

10. The light-emitting device as claimed in claim 9, wherein: In the plan view, the first contact electrode covers the entire single light-emitting structure, and The second contact electrode is spaced apart from the single light-emitting structure so as to face at least one side surface of the single light-emitting structure.

11. A light-emitting device, comprising: A light-emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer running vertically from top to bottom; A first conductivity type substrate layer is disposed on the light-emitting structure; A transparent electrode layer is located below and covers the second type of conductive semiconductor layer; A first reflective electrode layer, which contacts the lower surface of the first conductivity type substrate layer and extends in the horizontal direction; A second reflective electrode layer is in contact with the lower surface of the transparent electrode layer and extends in the horizontal direction; An upper insulating layer surrounds the first conductivity type base layer; The first contact electrode penetrates the upper insulating layer and contacts the first reflective electrode layer; as well as The second contact electrode penetrates the upper insulating layer and contacts the second reflective electrode layer. Wherein, the vertical horizontal level of each of the uppermost surfaces of the first contact electrode and the second contact electrode in the vertical direction is higher than the vertical horizontal level of the uppermost surface of the first conductivity type substrate layer in the vertical direction, and The vertical level of each of the lowermost surfaces of the first contact electrode and the second contact electrode in the vertical direction is equal to or lower than the vertical level of the lowermost surface of the first conductivity type substrate in the vertical direction.

12. The light-emitting device as claimed in claim 11, wherein, The vertical horizontal level of the uppermost surface of the first reflective electrode layer in the vertical direction is higher than the vertical horizontal level of the uppermost surface of the second reflective electrode layer.

13. The light-emitting device of claim 11, further comprising: A first through-hole penetrates the upper insulating layer and exposes the upper surface of the first reflective electrode layer; The second through-hole penetrates the upper insulating layer and exposes the upper surface of the second reflective electrode layer. The first contact electrode is conformally formed on the inner wall of the first through hole, and the second contact electrode is conformally formed on the inner wall of the second through hole.

14. The light-emitting device as claimed in claim 11, wherein, The vertical horizontal plane of the uppermost surface of the first contact electrode is the same as that of the uppermost surface of the second contact electrode.

15. The light-emitting device as claimed in claim 11, wherein, The first contact electrode and the second contact electrode each include a reflective electrode.

16. The light-emitting device as claimed in claim 11, wherein, The horizontal width of the first conductive type substrate layer is greater than the horizontal width of the light-emitting structure.

17. The light-emitting device as claimed in claim 11, wherein: The light-emitting structure is configured as a plurality of structures, and the plurality of light-emitting structures emit light of different wavelengths. The second contact electrode is configured as a plurality of electrodes, and the plurality of second contact electrodes respectively correspond to the plurality of light-emitting structures, and The first contact electrode is a common electrode that corresponds to all of the plurality of light-emitting structures.

18. The light-emitting device as claimed in claim 17, wherein, In the plan view, the first contact electrode and the second contact electrode are spaced apart from the plurality of light-emitting structures so as to face at least one side of the plurality of light-emitting structures.

19. The light-emitting device as claimed in claim 11, wherein: The light-emitting structure is configured to emit light with a single wavelength, and The first contact electrode and the second contact electrode are respectively configured as a single first contact electrode and a single second contact electrode to correspond to the single light-emitting structure.

20. A display device, comprising: A driver circuit board, which includes interconnects and transistors; as well as The light-emitting device is disposed on the driving circuit board. The light-emitting device includes: A light-emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer running vertically from top to bottom; A first conductivity type substrate layer is disposed on the light-emitting structure; A transparent electrode layer is located below and covers the second type of conductive semiconductor layer; A reflective electrode layer that contacts the transparent electrode layer and extends in the horizontal direction; An upper insulating layer surrounds the first conductivity type base layer; A first contact electrode, conformally disposed on the upper surface of a substrate layer of the first conductivity type; and The second contact electrode penetrates the upper insulating layer and contacts the reflective electrode layer. Wherein, the vertical horizontal level of each of the uppermost surfaces of the first contact electrode and the second contact electrode in the vertical direction is higher than the vertical horizontal level of the uppermost surface of the first conductivity type substrate layer in the vertical direction. The lowermost surface of the second contact electrode is at a lower vertical level than the lowermost surface of the first conductivity type substrate layer in the vertical direction. The second contact electrode is connected to the transistor via the interconnect.

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