Multi-domain separation and purification atomic layer deposition apparatus and method

Abstract

This invention relates to a multi-domain separation and purification atomic layer deposition (ALD) apparatus and method, comprising a reaction chamber, a multi-domain separation component disposed within the reaction chamber, a substrate support structure disposed at the bottom of the reaction chamber, a temperature control component, a gas supply system connected to the upper end of the reaction chamber, a vacuum extraction system connected to the lower end of the reaction chamber, and an equipment control system. The multi-domain separation component divides the interior of the reaction chamber into a reaction source buffer zone, a main reaction zone, and a purification buffer zone. This invention not only achieves spatial separation of the reaction and purification processes through innovative chamber spatial structure design and dynamic airflow control, but also significantly improves purification efficiency, reduces cross-contamination, and enhances precursor utilization.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a multi-domain separation and purification atomic layer deposition equipment and method. Background Technology

[0002] Atomic layer deposition (ALD), due to its self-limiting surface reaction mechanism, can achieve atomic-level thickness control, excellent three-dimensional conformal coverage and large-area uniformity, and has been widely used in semiconductor manufacturing and surface modification of new energy materials.

[0003] Current mass-produced ALD equipment generally adopts a single reaction chamber structure, with reaction and purification alternating within the same physical space. A typical cycle includes: precursor A pulse, inert gas purification, precursor B pulse, and inert gas purification. This structure has the following common problems in actual processes: 1) The shared cavity for reaction and purification leads to a high risk of cross-contamination. In a single-cavity structure, precursor molecules and byproducts not only exist near the substrate but also adsorb / retain on the cavity walls, top cover, gas distribution components, and extraction channels. Even during the purification phase, residual molecules may continue to desorb and diffuse back into the reaction area, undergoing gas-phase side reactions with the next pulsed precursor or forming undesirable reactions on the substrate surface. This can introduce particles, impurities, or film defects, especially in precursor systems with high reactivity, easy polymerization, or complex byproducts.

[0004] 2) A significant conflict exists between conservative purification time settings and increased production capacity. To reduce cross-contamination, processes typically employ longer purification times or larger inert gas flow rates. However, this significantly prolongs single-cycle time, reduces throughput, and increases inert gas consumption. Conversely, shortening purification time or increasing pulse dosage to increase production capacity can lead to insufficient purification, allowing residual precursors to persist, causing cross-contamination and narrowing the process window.

[0005] 3) Purification of complex structural substrates or substrates with high specific surface area is challenging. For porous electrodes, nanostructure arrays, and other high aspect ratio structures or porous substrates, gas exchange is slow in pores and "dead zones." Single-chamber purging purification often fails to achieve a stable residual level within a limited time, leading to increased randomness of residues between cycles and decreased deposition repeatability.

[0006] 4) Fixed purification sequences lack adaptability to changes in operating conditions. During mass production, the pressure of the precursor source bottle, valve response, pump load, and the degree of contamination in the cavity will change over time. Fixed purification sequences cannot be adjusted according to the real-time residual status, which can easily lead to two types of problems: "insufficient purification" or "over-purification," resulting in fluctuations in membrane performance or wasted efficiency.

[0007] Existing improvement solutions mostly focus on increasing pumping speed, optimizing the air intake distribution structure, or using faster valves. However, they do not fundamentally change the basic paradigm of the reaction and purification spaces sharing the same reaction space, making it difficult to fundamentally achieve both "low cross-contamination" and "high efficiency" simultaneously. Therefore, there is an urgent need for an ALD device and method that can physically separate the reaction space and purification space within the chamber and achieve closed-loop regulation of purification based on the process status, in order to improve film quality, production capacity, and long-term stability. Summary of the Invention

[0008] In view of the above problems, the present invention provides a multi-domain separation and purification atomic layer deposition device and method, which not only achieves spatial separation of the reaction and purification processes through innovative cavity space structure design and dynamic airflow control, but also significantly improves purification efficiency, reduces cross-contamination, and enhances precursor utilization.

[0009] To achieve the above and other related objectives, the present invention provides the following technical solution: A multi-domain separation and purification atomic layer deposition apparatus includes a reaction chamber, a multi-domain separation component disposed within the reaction chamber, a substrate support structure disposed at the bottom of the reaction chamber, a temperature control component, a gas supply system connected to the upper end of the reaction chamber, a vacuum extraction system connected to the lower end of the reaction chamber, and an equipment control system. The multi-domain separation component divides the interior of the reaction chamber into a reaction source buffer zone, a main reaction zone, and a purification buffer zone. The multi-domain separation component includes an annular dividing guide disposed at the upper part of the reaction chamber, a spray structure disposed in the middle of the reaction chamber, and an isolation and communication structure disposed at the lower part of the reaction chamber. The vacuum extraction system includes a reaction extraction interface connected below the main reaction zone and a purification extraction interface connected below the purification buffer zone.

[0010] Furthermore, the annular separator is disposed between the reaction source buffer zone and the purification buffer zone, and an electrically controlled flow resistance channel is provided on the annular separator.

[0011] Furthermore, the spray structure is disposed between the reaction source buffer zone and the main reaction zone.

[0012] Furthermore, the isolation and connection structure is disposed between the main reaction domain and the purification buffer domain, and the isolation and connection structure is provided with an electrically controlled flow resistance channel II, which is distributed circumferentially along the main reaction domain to adjust the gas flow conduction between the main reaction domain and the purification buffer domain.

[0013] Furthermore, the temperature control component includes a sample heater, a purification heater, a patch thermocouple one, and a patch thermocouple two. The sample heater is disposed inside the substrate support structure. The purification heater is annularly distributed and installed on the inner sidewall of the purification buffer zone. The patch thermocouple one is installed on the end face of the isolation and communication structure within the main reaction zone, and the patch thermocouple two is installed on the end face of the isolation and communication structure within the purification buffer zone.

[0014] Furthermore, the gas supply system includes a precursor A supply pipeline, a precursor B supply pipeline, a purified gas pipeline, a pulse injection pipeline, and a pulse switching valve. The pulse switching valve is configured to selectively switch the gas from any one of the precursor A supply pipeline, the precursor B supply pipeline, and the purified gas pipeline and deliver it to the pulse injection pipeline, thereby sending it into the reaction source buffer zone within the reaction chamber.

[0015] Furthermore, the reaction pumping interface is connected to the vacuum pumping pump group via a reaction pumping branch, and a reaction pumping proportional valve is provided on the reaction pumping interface.

[0016] Furthermore, the purification and exhaust interface is connected to the vacuum pump group via a purification and exhaust branch, and a purification and exhaust proportional valve is provided on the purification and exhaust branch.

[0017] To achieve the above and other related objectives, the present invention also provides a multi-domain separation and purification atomic layer deposition method, applied to the aforementioned multi-domain separation and purification atomic layer deposition apparatus, comprising: S1. Preparation stage: Turn on the vacuum extraction system, and coordinate the opening of the reaction extraction proportional valve and the purification extraction proportional valve to make the pressure of the main reaction zone and the purification buffer zone reach their respective process set values. At the same time, set the temperature of the purification buffer zone to be higher than the temperature of the main reaction zone (205). S2. Precursor A pulse injection: Set the electronically controlled flow resistance channel one and electronically controlled flow resistance channel two to a high flow resistance state, so that precursor A enters the reaction source buffer through the pulse injection pipe, and is injected into the main reaction domain through the spray structure for surface reaction. S3. First purification: Inert gas is injected into the reaction source buffer zone through the pulse injection pipeline and injected into the main reaction zone through the spray structure for surface purging. The electrically controlled flow resistance channel one and electrically controlled flow resistance channel two are set to a low flow resistance state. At the same time, the opening of the purification exhaust proportional valve and the reaction exhaust proportional valve are adjusted so that the pressure in the purification buffer zone is lower than that in the main reaction zone, thereby achieving separate purification of the reaction zone and the buffer zone. S4. Precursor B pulse injection: Set the electronically controlled flow resistance channel one and electronically controlled flow resistance channel two to a high flow resistance state, so that the precursor B enters the reaction source buffer through the pulse injection pipe, and is injected into the main reaction domain through the spray structure for surface reaction. S5. Second purification: Repeat the purification process of step S3; S6. Repeat steps S2 to S5 to complete the set atomic layer deposition cycle.

[0018] The present invention has the following positive effects: 1. Improved purification efficiency and speed: This invention, through a "spatial separation purification" mechanism, creates an independent, rapid lateral discharge channel for the waste gas flow, significantly shortening the time required to remove residues from the reaction zone. Compared to traditional longitudinal purging, it can significantly reduce the time for a single purification cycle, thereby increasing the overall process throughput.

[0019] 2. Reduced risk of cross-contamination: During the purification stage, residues in the reaction source buffer zone are directly laterally removed, preventing them from entering the main reaction zone in the next cycle. Simultaneously, byproducts in the main reaction zone are also rapidly laterally removed, rather than remaining in the upper part of the chamber. This physical separation significantly reduces the possibility of non-ideal mixing reactions between different precursors in the gas phase or on the wall surface, which is beneficial for depositing higher purity and more uniform films.

[0020] 3. Effectively improves precursor utilization and economy: During the injection stage, the high flow resistance setting limits the leakage of precursors into the purification buffer zone, forcing more precursor molecules to flow to the substrate to participate in the reaction, reducing direct waste.

[0021] 4. Enhanced process controllability and stability: Independent dual-path extraction, zoned temperature control, and electrically adjustable flow resistance channels provide multi-dimensional and precise control over the process. Optimized volume ratio and purification buffer zone heating strategy jointly ensure the long-term high efficiency and stability of the "waste extraction channel," improving process repeatability and reliability.

[0022] 5. Compact structure and easy to implement: This solution innovatively separates and integrates existing ALD cavity structures, eliminating the need for extremely complex external systems. Through ingenious internal component design and control logic, it achieves a leap in performance. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the multi-domain separation adaptive purification atomic layer deposition apparatus of the present invention; Figure 2 This is a schematic diagram of the cavity structure of the multi-domain separation adaptive purification atomic layer deposition device of the present invention; Figure 3 This is a schematic diagram of the multi-domain separation adaptive purification atomic layer deposition method of the present invention.

[0024] Explanation of the labels in the diagram: 101-Reaction chamber, 102-Multi-domain separation component, 103-Base support structure, 104-Temperature control component, 105-Gas supply system, 106-Vacuum extraction system, 107-Equipment control system, 201-Annular partition guide, 202-Spray structure, 203-Isolation and connection structure, 204-Reaction source buffer zone, 205-Main reaction zone, 206-Purification buffer zone, 207-Electrically controlled flow resistance channel one, 208-Electrically controlled flow resistance channel two, 401-Sample Product heater, 402-Purification heater, 403-Surface mount thermocouple one, 404-Surface mount thermocouple two, 501-Precursor A supply line, 502-Precursor B supply line, 503-Purification gas line, 504-Pulse injection line, 505-Pulse switching valve, 601-Reaction extraction port, 602-Reaction extraction branch, 603-Reaction extraction proportional valve, 604-Purification extraction port, 605-Purification extraction branch, 606-Purification extraction proportional valve, 607-Vacuum extraction pump set. Detailed Implementation

[0025] The exemplary embodiments of this disclosure are described below with reference to the accompanying drawings, including various details of the embodiments to aid understanding, and should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of this disclosure. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0026] Example 1: As Figure 1 or Figure 2 As shown, a multi-domain separation and purification atomic layer deposition apparatus includes a reaction chamber 101, a multi-domain separation component 102 disposed within the reaction chamber 101, a substrate support structure 103 disposed at the bottom of the reaction chamber 101, a temperature control component 104, a gas supply system 105 connected to the upper end of the reaction chamber 101, a vacuum extraction system 106 connected to the lower end of the reaction chamber 101, and an equipment control system 107. The multi-domain separation component 102 divides the interior of the reaction chamber 101 into... The reaction source buffer zone 204, the main reaction zone 205, and the purification buffer zone 206 are included. The multi-domain separation component 102 includes an annular dividing guide 201 disposed on the upper part of the reaction chamber 101, a spray structure 202 disposed in the middle of the reaction chamber 101, and an isolation and communication structure 203 disposed on the lower part of the reaction chamber 101. The vacuum extraction system 106 includes a reaction extraction interface 601 connected below the main reaction zone 205 and a purification extraction interface 604 connected below the purification buffer zone 206.

[0027] In this embodiment, the annular separator 201 is disposed between the reaction source buffer zone 204 and the purification buffer zone 206, and the annular separator 201 is provided with an electrically controlled flow resistance channel 207.

[0028] In this embodiment, the spray structure 202 is disposed between the reaction source buffer zone 204 and the main reaction domain 205.

[0029] In this embodiment, the isolation and connection structure 203 is disposed between the main reaction domain 205 and the purification buffer domain 206. The isolation and connection structure 203 is provided with an electrically controlled flow resistance channel 208, which is distributed circumferentially along the main reaction domain 205 and is used to adjust the gas flow between the main reaction domain 205 and the purification buffer domain 206.

[0030] In this embodiment, the temperature control component 104 includes a sample heater 401, a purification heater 402, a patch thermocouple one 403, and a patch thermocouple two 404. The sample heater 401 is disposed inside the substrate support structure 103. The purification heater 402 is installed in a ring on the inner sidewall of the purification buffer zone 206. The patch thermocouple one 403 is installed on the end face of the isolation and communication structure 203 in the main reaction zone 205. The patch thermocouple two 404 is installed on the end face of the isolation and communication structure 203 in the purification buffer zone 206.

[0031] In this embodiment, the gas supply system 105 includes a precursor A supply pipeline 501, a precursor B supply pipeline 502, a purified gas pipeline 503, a pulse injection pipeline 504, and a pulse switching valve 505. The pulse switching valve 505 is configured to selectively switch the gas from any of the precursor A supply pipeline 501, precursor B supply pipeline 502, and purified gas pipeline 503 and deliver it to the pulse injection pipeline 504, and then send it into the reaction source buffer 204 within the reaction chamber 101.

[0032] In this embodiment, the reaction pumping interface 601 is connected to the vacuum pumping pump group 607 via the reaction pumping branch 602, and a reaction pumping proportional valve 603 is provided on the reaction pumping interface 601.

[0033] In this embodiment, the purification and exhaust interface 604 is connected to the vacuum pump group 607 via the purification and exhaust branch 605, and a purification and exhaust proportional valve 606 is provided on the purification and exhaust branch 605.

[0034] In this embodiment, as Figure 3As shown, a multi-domain separation and purification atomic layer deposition method, applied to the aforementioned multi-domain separation and purification atomic layer deposition equipment, includes: S1. Preparation stage: Turn on the vacuum extraction system 106, and coordinate the opening of the reaction extraction proportional valve 603 and the purification extraction proportional valve 606 to make the pressure of the main reaction zone 205 and the purification buffer zone 206 reach their respective process set values. At the same time, set the temperature of the purification buffer zone 206 to be higher than the temperature of the main reaction zone 205. S2. Precursor A pulse injection: Set the electronically controlled flow resistance channel 1 207 and the electronically controlled flow resistance channel 208 to a high flow resistance state, so that the precursor A enters the reaction source buffer 204 through the pulse injection pipe 504, and is injected into the main reaction domain 205 through the spray structure 202 for surface reaction. S3. First purification: Inert gas is introduced into the reaction source buffer zone 204 through the pulse injection pipe 504, and injected into the main reaction zone 205 through the spray structure 202 for surface purging. The electrically controlled flow resistance channel 1 207 and the electrically controlled flow resistance channel 208 are set to a low flow resistance state. At the same time, the opening of the purification extraction proportional valve 606 and the reaction extraction proportional valve 603 is adjusted so that the pressure in the purification buffer zone 206 is lower than that in the main reaction zone 205, thereby achieving separate purification of the reaction zone and the buffer zone. S4. Precursor B pulse injection: Set the electronically controlled flow resistance channel 1 207 and electronically controlled flow resistance channel 208 to a high flow resistance state, so that the precursor B enters the reaction source buffer 204 through the pulse injection pipe 504 and is injected into the main reaction domain 205 through the spray structure 202 for surface reaction. S5. Second purification: Repeat the purification process of step S3; S6. Repeat steps S2 to S5 to complete the set atomic layer deposition cycle.

[0035] Example 2: Based on the multi-domain separation and purification atomic layer deposition system of Example 1, the present invention will be further described and explained below.

[0036] This embodiment provides a specific implementation of a multi-domain separation and purification ALD device for depositing alumina (Al2O3) thin films, focusing on the structural details and key parameter settings of the device.

[0037] The reaction chamber 101 is made of stainless steel, with its inner walls electropolished to reduce surface adsorption. All components of the multi-domain separation assembly 102 are made of corrosion-resistant aluminum alloy and undergo hard anodizing surface treatment. The annular separator guide 201 is an annular component with an inverted L-shaped cross-section, its horizontal portion connecting to the sidewall of the chamber, and its vertical portion extending downwards. The electrically controlled flow resistance channel 207 consists of multiple slit-type valves evenly distributed circumferentially, driven by piezoelectric ceramics, capable of linearly and rapidly adjusting the opening between 0% and 100%, with a response time of less than 100 milliseconds.

[0038] Spray structure 202: It is a porous flow equalization plate with hundreds of micro-guide holes distributed on it. The opening ratio is optimized by computational fluid dynamics simulation to ensure that the precursor gas can enter the main reaction domain 205 uniformly and smoothly to form an approximate piston flow.

[0039] Isolation and connection structure 203: This is an annular baffle that physically separates the bottom of the main reaction zone 205 from the surrounding purification buffer zone 206. Electrically controlled flow resistance channel 208 consists of multiple circular holes circumferentially formed on this baffle. Each hole is connected to an independent miniature electromagnetic needle valve, allowing for synchronous control and adjustment of flow conduction.

[0040] Temperature control component 104: Sample heater 401 is an embedded resistance heater that can stably control the substrate temperature between 80°C and 350°C. Purification heater 402 is an armored heating strip wrapped around the inner wall of the purification buffer zone 206. Through feedback from patch thermocouple one 403 and patch thermocouple two 404, the equipment control system 107 sets the temperature of the purification buffer zone to be 25°C higher than that of the main reaction zone. This temperature difference helps the byproducts of trimethylaluminum (TMA) and water (H2O) to remain in a gaseous state in the purification buffer zone and be effectively removed.

[0041] Vacuum extraction system 106: The reaction extraction port 601 is located directly below the center of the base support structure 103. The purification extraction port 604 is located on the bottom side of the cavity and is directly connected to the purification buffer zone 206. The two extraction branches eventually converge to the vacuum extraction pump group 607. Both the reaction extraction proportional valve 603 and the purification extraction proportional valve 606 are high-precision electric butterfly valves, controlled by the program of the equipment control system 107.

[0042] Example 3: Based on the multi-domain separation and purification atomic layer deposition system of Example 1, the present invention will be further described and explained below.

[0043] This embodiment provides a specific process method for atomic layer deposition of titanium nitride (TiN) thin films, focusing on timing control and parameter coordination.

[0044] 1. Process preparation The substrate support structure 103, which contains a silicon substrate, is fed into the reaction chamber 101 and sealed.

[0045] Start the dry vortex pump and set the process parameters through the equipment control system 107. Set the pressure of the main reaction zone 205 to 150 Pa and the pressure of the purification buffer zone 206 to 100 Pa. The system establishes and maintains this pressure difference by automatically adjusting the reaction extraction proportional valve 603 and the purification extraction proportional valve 606.

[0046] Start the temperature control component 104. Set the base temperature to 250℃. Set the temperature of the purification buffer zone 206 to 275℃, i.e., maintain a positive temperature difference of 25℃.

[0047] 2. A complete TiN ALD cycle Each cycle contains the following four sub-steps, which are automatically executed by the equipment control system 107: Step A: Pulse injection of tetrakis(dimethylamino)titanium (TDMAT) precursor; Flow control settings: Both the electrically controlled flow resistance channel 1 (207) and the electrically controlled flow resistance channel 2 (208) are set to "high flow resistance state". In this embodiment, this state corresponds to a valve opening of 5%, allowing only a very small amount of leakage.

[0048] Gas injection: The pulse switching valve 505 is switched to the supply line 501 connected to precursor A. The pulse valve is opened to inject a mixture of Ar gas carrying TDMAT vapor into the pulse injection line 504 for 0.5 seconds. The gas enters the reaction source buffer 204.

[0049] Reaction: Driven by the high pressure difference, the gas mainly flows downward through the spray structure 202 into the main reaction domain 205, where it undergoes a self-limiting chemical adsorption reaction on the surface of the silicon substrate at 250°C.

[0050] Step B: First purification, to remove residual TDMAT and reaction byproducts; Flow control settings: Quickly switch the electrically controlled flow resistance channel 1 207 and electrically controlled flow resistance channel 208 to "low flow resistance state". At the same time, increase the opening of the purification exhaust proportional valve 606 to 85% and decrease the opening of the reaction exhaust proportional valve 603 to 15%.

[0051] Gas injection: The pulse switching valve 505 switches to the purified gas pipeline 503 to continuously or pulsedly introduce high-purity Ar gas into the system.

[0052] Separate purification: The above operation causes the pressure in the purification buffer zone 206 to drop sharply to about 80 Pa, while the pressure in the main reaction zone 205 temporarily increases, forming a transverse airflow from the main reaction zone and the reaction source buffer zone toward the purification buffer zone.

[0053] The residual TDMAT that did not participate in the reaction in the reaction source buffer 204 is carried by Ar gas and migrates laterally to the purification buffer 206 through the fully open electrically controlled flow resistance channel 207.

[0054] The residual TDMAT in the gas phase of the main reaction domain 205 and the byproducts generated by the surface reaction are carried by Ar gas and rapidly extracted laterally from the reaction area through the fully open circumferentially open electrically controlled flow resistance channel 208, and enter the purification buffer domain 206.

[0055] All exhaust gas entering the purification buffer zone 206 is preferentially extracted at high speed through the purification exhaust port 604. This purification process lasts for 3.0 seconds.

[0056] Step C: Pulse injection of ammonia (NH3) precursor; Flow control settings: Same as step A, reset the two electronically controlled flow resistance channels to high flow resistance state (opening degree 5%).

[0057] Gas injection: Pulse switching valve 505 switches to precursor B supply line 502, injecting NH3 / Ar mixed gas for 1.0 second.

[0058] Reaction: NH3 enters the main reaction domain 205 and reacts with the TDMAT ligand layer adsorbed on the surface to generate a TiN film and release new byproducts.

[0059] Step D: Second purification, removing residual NH3 and reaction byproducts.

[0060] Flow control setup and operation: Completely repeat the flow control setup and gas injection operation from step B. The purification time remains 3.0 seconds to thoroughly remove all residues.

[0061] 3. Execute in a loop Repeating the above ABCD steps constitutes one complete TiN ALD cycle. In this embodiment, 600 cycles are set, ultimately obtaining a uniform and dense titanium nitride film with a thickness of approximately 30 nm on a silicon substrate.

[0062] In summary, this invention not only achieves spatial separation of the reaction and purification processes through innovative cavity space structure design and dynamic airflow control, but also significantly improves purification efficiency, reduces cross-contamination, and enhances precursor utilization.

[0063] The specific embodiments described above do not constitute a limitation on the scope of protection of this disclosure. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A multi-domain separation and purification atomic layer deposition apparatus, comprising a reaction chamber (101), a multi-domain separation component (102) disposed within the reaction chamber (101), a substrate support structure (103) disposed at the bottom of the reaction chamber (101), a temperature control component (104), a gas supply system (105) connected to the upper end of the reaction chamber (101), a vacuum extraction system (106) connected to the lower end of the reaction chamber (101), and an equipment control system (107), characterized in that: The multi-domain separation component (102) divides the interior of the reaction chamber (101) into a reaction source buffer zone (204), a main reaction zone (205), and a purification buffer zone (206). The multi-domain separation component (102) includes an annular dividing guide (201) disposed on the upper part of the reaction chamber (101), a spray structure (202) disposed in the middle part of the reaction chamber (101), and an isolation communication structure (203) disposed on the lower part of the reaction chamber (101). The vacuum extraction system (106) includes a reaction extraction interface (601) connected to the lower part of the main reaction zone (205) and a purification extraction interface (604) connected to the lower part of the purification buffer zone (206).

2. The multi-domain separation and purification atomic layer deposition equipment according to claim 1, characterized in that: The annular separator (201) is disposed between the reaction source buffer zone (204) and the purification buffer zone (206), and an electrically controlled flow resistance channel (207) is provided on the annular separator (201).

3. The multi-domain separation and purification atomic layer deposition apparatus according to claim 1, characterized in that: The spray structure (202) is disposed between the reaction source buffer zone (204) and the main reaction zone (205).

4. The multi-domain separation and purification atomic layer deposition apparatus according to claim 1, characterized in that: The isolation and connection structure (203) is disposed between the main reaction domain (205) and the purification buffer domain (206). The isolation and connection structure (203) is provided with an electrically controlled flow resistance channel (208), which is distributed circumferentially along the main reaction domain (205) and is used to adjust the gas flow between the main reaction domain (205) and the purification buffer domain (206).

5. The multi-domain separation and purification atomic layer deposition apparatus according to claim 1, characterized in that: The temperature control component (104) includes a sample heater (401), a purification heater (402), a patch thermocouple one (403), and a patch thermocouple two (404). The sample heater (401) is disposed inside the substrate support structure (103). The purification heater (402) is installed in a ring on the inner sidewall of the purification buffer zone (206). The patch thermocouple one (403) is installed on the end face of the isolation and communication structure (203) in the main reaction zone (205). The patch thermocouple two (404) is installed on the end face of the isolation and communication structure (203) in the purification buffer zone (206).

6. The multi-domain separation and purification atomic layer deposition apparatus according to claim 1, characterized in that: The gas supply system (105) includes a precursor A supply line (501), a precursor B supply line (502), a purified gas line (503), a pulse injection line (504), and a pulse switching valve (505). The pulse switching valve (505) is configured to selectively switch the gas from any of the precursor A supply line (501), the precursor B supply line (502), and the purified gas line (503) and deliver it to the pulse injection line (504), and then send it into the reaction source buffer (204) in the reaction chamber (101).

7. The multi-domain separation and purification atomic layer deposition apparatus according to claim 1, characterized in that: The reaction pumping port (601) is connected to the vacuum pumping pump group (607) via the reaction pumping branch (602), and a reaction pumping proportional valve (603) is provided on the reaction pumping port (601).

8. The multi-domain separation and purification atomic layer deposition apparatus according to claim 7, characterized in that: The purification and exhaust port (604) is connected to the vacuum pump group (607) via the purification and exhaust branch (605), and a purification and exhaust proportional valve (606) is provided on the purification and exhaust branch (605).

9. A multi-domain separation and purification atomic layer deposition method, characterized in that, The multi-domain separation and purification atomic layer deposition apparatus according to any one of claims 1-8 comprises: S1. Preparation stage: Turn on the vacuum extraction system (106), and coordinate the opening of the reaction extraction proportional valve (603) and the purification extraction proportional valve (606) to make the pressure of the main reaction zone (205) and the purification buffer zone (206) reach their respective process set values. At the same time, set the temperature of the purification buffer zone (206) to be higher than the temperature of the main reaction zone (205). S2. Pulse injection of precursor A: Set the first (207) and the second (208) of the electrically controlled flow resistance channel to a high flow resistance state, so that the precursor A enters the reaction source buffer (204) through the pulse injection pipe (504) and is injected into the main reaction domain (205) through the spray structure (202) for surface reaction; S3. First purification: Inert gas is introduced into the reaction source buffer zone (204) through the pulse injection pipe (504) and injected into the main reaction zone (205) through the spray structure (202) for surface purging. The first electrically controlled flow resistance channel (207) and the second electrically controlled flow resistance channel (208) are set to a low flow resistance state. At the same time, the opening of the purification extraction proportional valve (606) and the reaction extraction proportional valve (603) are adjusted so that the pressure in the purification buffer zone (206) is lower than that in the main reaction zone (205), thereby realizing the separate purification of the reaction zone and the buffer zone. S4. Pulse injection of precursor B: Set the first (207) and the second (208) of the electrically controlled flow resistance channel to a high flow resistance state, so that the precursor B enters the reaction source buffer (204) through the pulse injection pipe (504) and is injected into the main reaction domain (205) through the spray structure (202) for surface reaction; S5. Second purification: Repeat the purification process of step S3; S6. Repeat steps S2 to S5 to complete the set atomic layer deposition cycle.

Images