Metal thin film deposition methods

Abstract

This application relates to the field of vapor deposition technology, specifically to a method for depositing metal thin films, comprising: placing a substrate in a vacuum chamber, the substrate surface having a predetermined deposition region; directionally delivering precursor vapor to the vicinity of the predetermined deposition region via a gas injection device to form a vapor-rich region near the predetermined deposition region; simultaneously applying an electron beam and a laser beam, both focused on the vapor-rich region, causing the precursor vapor to dissociate, thereby depositing a metal thin film on the substrate surface. This application enables sufficient dissociation of the precursor, significantly reduces residual impurities, and effectively improves the quality of the prepared metal thin film.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, and more specifically, to a method for depositing metal thin films. Background Technology

[0002] With the continuous miniaturization of semiconductor process nodes (e.g., entering 3nm and below), and the development of high-end fields such as quantum computing, microelectromechanical systems (MEMS), and aerospace sensors, the key interconnects and electrode structures of various functional devices have fully entered the nanoscale. Against this backdrop, unprecedentedly stringent requirements have been placed on the deposition precision, material purity, structural compactness, and interface stability of nanoscale metal thin films. Currently, the mainstream nanoscale metal direct-write techniques mainly rely on focused ion beam induced deposition (FIBID) and focused electron beam induced deposition (FEBID). These two techniques introduce metal-organic precursor vapors into a vacuum chamber and use highly focused ion or electron beams to induce precursor decomposition in specific areas of the sample surface.

[0003] However, existing technologies still have significant drawbacks: on the one hand, FIBID systems typically employ liquid metal ion sources (such as Ga...). + During the deposition process, gallium ions are inevitably injected into the substrate and incorporated into the metal film, causing severe interface contamination and lattice damage, resulting in increased contact resistance and decreased device reliability. On the other hand, although FEBID avoids ion contamination, its dissociation mechanism is highly dependent on low-energy secondary electrons (with energy concentrated in 1–6 eV). The energy required for the complete dissociation of commonly used metal carbonyl precursors (such as W(CO)6, Fe(CO)5, etc.) is often higher than this range, resulting in insufficient dissociation of the precursors. The deposited products contain a large amount of non-metallic impurities such as carbon and oxygen, causing the metal film to exhibit problems such as porosity, looseness, poor adhesion, high resistivity, and insufficient long-term stability. Summary of the Invention

[0004] The purpose of this application is to provide a metal thin film deposition method that enables the precursor to be fully dissociated, significantly reduces residual impurities, and effectively improves the preparation quality of the metal thin film.

[0005] This application is implemented as follows: This application provides a method for metal thin film deposition, including: A substrate is placed in a vacuum chamber, and the surface of the substrate has a predetermined deposition area; The precursor vapor is directionally delivered to the vicinity of the preset deposition area through a gas injection device to form a vapor enrichment zone near the preset deposition area; An electron beam and a laser beam are applied simultaneously and focused onto the vapor-rich region via a confocal optical system, causing the precursor vapor to dissociate and deposit a metal thin film on the substrate surface.

[0006] As an optional implementation, before the precursor vapor is directionally delivered to the vicinity of the preset deposition area via a gas injection device to form a vapor-rich zone near the preset deposition area, the method further includes the following steps: An oxygen-containing activation gas is introduced into the vacuum chamber so that the substrate is in an oxygen-containing activation gas atmosphere. An electron beam is used to scan and irradiate a predetermined deposition area of ​​the substrate, causing the oxygen-containing activation gas to generate active oxides under the action of the electron beam, thereby activating the surface of the predetermined deposition area.

[0007] As an optional implementation, the step of introducing an oxygen-containing activating gas into the vacuum chamber to place the substrate in an oxygen-containing activating gas atmosphere includes: Water vapor is introduced into the vacuum chamber; wherein the flow rate of the water vapor is 0.2-1 sccm.

[0008] As an optional implementation, the step of irradiating a predetermined deposition area of ​​the substrate with an electron beam, causing the oxygen-containing activation gas to generate active oxides under the action of the electron beam, thereby activating the surface of the predetermined deposition area, includes: The electron beam scan irradiates the preset deposition area for 5-20 seconds; wherein the landing voltage of the electron beam is 0.6-20KV and the exposure beam current is 20pA-500nA.

[0009] As an optional implementation, after the simultaneous application of an electron beam and a laser beam, both focused on the vapor-rich region to dissociate the precursor vapor and deposit a metal thin film on the substrate surface, the method further includes the following steps: After the metal thin film is deposited to a preset thickness, the electron beam and laser beam are turned off; Extract the remaining precursor vapor from the vacuum chamber; The metal thin film is scanned and irradiated with a high-energy electron beam to remove residual carbon impurities in situ; wherein the accelerating voltage of the high-energy electron beam is greater than the accelerating voltage of the electron beam used in the deposition stage.

[0010] As an optional implementation, the accelerating voltage of the high-energy electron beam is 20-30kV.

[0011] As an optional implementation, the step of directionally delivering precursor vapor to the vicinity of the preset deposition area via a gas injection device to form a vapor enrichment zone near the preset deposition area further includes: The precursor vapor and nitrogen dioxide are simultaneously or alternately introduced through a gas injection device.

[0012] As an alternative implementation, the laser beam is generated by a KrF excimer laser, an ArF excimer laser, or an F2 excimer laser.

[0013] As an optional implementation, the electron beam and the laser beam are coaxial or have a predetermined spatial overlap region.

[0014] As an optional implementation, the oxygen-containing activating gas includes at least one of water vapor, oxygen, and nitrogen dioxide.

[0015] The beneficial effects of this application include: The metal thin film deposition method provided in this application effectively solves the problems of incomplete precursor dissociation due to insufficient secondary electron energy, high carbon and oxygen impurity content, loose structure, poor adhesion, and high resistivity in existing technologies by synergistically combining laser beams and electron beams in space and time. Simultaneously, it completely avoids the problems associated with Ga in the FIBID process. + Contamination and lattice damage caused by ion implantation; the resulting nanoscale metal thin films have high purity, high density, excellent interfacial adhesion, low resistivity and good long-term stability, which can meet the stringent requirements of advanced semiconductor devices, quantum computing chips and high-reliability micro-nano systems for high-performance metal interconnects. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is one of the schematic diagrams illustrating the co-irradiation of a vapor-rich region by an electron beam and a laser beam according to an embodiment of this application; Figure 2 This is a second schematic diagram of the vapor enrichment region jointly irradiated by an electron beam and a laser beam according to an embodiment of this application; Figure 3 This is a schematic diagram of high-energy electron beam scanning irradiation of a metal thin film according to an embodiment of this application; Figure 4 This is a schematic diagram illustrating the introduction of an oxygen-containing activating gas in an embodiment of this application; Figure 5 This is a schematic diagram of the vacuum chamber extracting excess oxygen-containing activation gas in an embodiment of this application.

[0018] Icons: 100-Substrate; 101-Vacuum chamber; 102-Preset deposition area; 103-Vapor enrichment area; 104-Electron beam; 105-Laser beam; 106-Oxygen-containing activation gas; 107-Metal thin film; 108-High-energy electron beam; 109-Gas injection device. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0022] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] Existing technologies still have the following drawbacks: On the one hand, FIBID systems typically employ liquid metal ion sources (such as Ga...). +During the deposition process, gallium ions are inevitably injected into the substrate and incorporated into the metal film, causing severe interface contamination and lattice damage, resulting in increased contact resistance and decreased device reliability. On the other hand, although FEBID avoids ion contamination, its dissociation mechanism is highly dependent on low-energy secondary electrons (with energy concentrated in 1–6 eV). The energy required for the complete dissociation of commonly used metal carbonyl precursors (such as W(CO)6, Fe(CO)5, etc.) is often higher than this range, resulting in insufficient dissociation of the precursors. The deposited products contain a large amount of non-metallic impurities such as carbon and oxygen, causing the metal film to exhibit problems such as porosity, looseness, poor adhesion, high resistivity, and insufficient long-term stability.

[0024] To address the aforementioned technical problems, this application provides a method for metal thin film deposition.

[0025] The metal thin film deposition method provided in this application includes: Reference Figure 1 As shown, a substrate 100 is placed in a vacuum chamber 101, and the surface of the substrate 100 has a predetermined deposition area 102. Reference Figure 1 , Figure 2 As shown, the precursor vapor is directionally transported to the vicinity of the preset deposition area 102 through the gas injection device 109 to form a vapor enrichment area 103 near the preset deposition area 102. Reference Figure 1 , Figure 2 As shown, an electron beam 104 and a laser beam 105 are applied simultaneously, and the electron beam 104 and the laser beam 105 are focused into the vapor enrichment region 103 by a confocal optical system, causing the precursor vapor to dissociate, so as to deposit a metal thin film 107 on the surface of the substrate 100.

[0026] It should be noted that the precursor is usually a metal-organic precursor, M(CO). X For example, W(CO)6, Fe(CO)5, etc.

[0027] It should be noted that in traditional focused electron beam induced deposition (FEBID), the low secondary electron energy (typically 1–6 eV) makes it difficult to completely dissociate the highly stable precursor, resulting in a high carbon and oxygen impurity content, loose structure, and poor adhesion in the deposited film. This application integrates a laser source and its focusing optics system, generating a laser beam 105 that can effectively excite and break metal-ligand bonds, causing them to pre-dissociate into intermediate fragments (such as M(CO)). X-N This significantly reduces the activation energy required for further dissociation of the remaining ligands.

[0028] It should be noted that the mechanism of the laser beam 105 is that photons excite precursor molecules adsorbed on or near the surface of the substrate 100 through electronic transitions; electrons are excited by collisional ionization. Both can occur simultaneously or produce a cascade effect, and molecules are more easily ionized after photoexcitation. Therefore, in this embodiment, the laser beam 105 and the electron beam 104 act synchronously or quasi-synchronously on the precursor vapor enrichment region 103 on or near the surface of the substrate 100; wherein, synchronization includes the laser beam 105 and the electron beam 104 focusing on the same region at the same time; when the laser beam 105 and the electron beam 104 arrive simultaneously, photons excite molecules, and the resulting photoexcited molecules are immediately dissociated by electron collisions.

[0029] Quasi-synchronous means that the laser beam 105 first irradiates the precursor, and after a short time interval (e.g., 1–10 microseconds, preferably about 5 microseconds), the electron beam 104 is then focused onto the area that has been pre-treated by the laser.

[0030] This time interval is sufficient to maintain the high reactivity of laser-induced excited-state molecules or free radicals, while preventing premature oxidation and waste of the precursor. In this spatiotemporal synergistic strategy, the laser achieves soft dissociation of the precursor, while the electron beam 104 utilizes its nanoscale focusing capability to achieve precise positioning and deep dissociation. The coupling of these two significantly improves the overall dissociation efficiency and metal nucleation quality; it not only compensates for the insufficient energy of a single electron beam 104 but also greatly improves the overall dissociation efficiency and integrity of the precursor, thereby avoiding Ga in FIBID. + Under the premise of ion contamination, a nanoscale metal thin film 107 with high purity, high density, strong interfacial bonding and electrical properties close to those of bulk materials is obtained, which meets the stringent requirements of advanced semiconductors, quantum devices and high-reliability micro-nano systems for metal interconnection.

[0031] This application embodiment effectively solves the problems of incomplete precursor dissociation due to insufficient secondary electron energy, high carbon and oxygen impurity content, loose structure, poor adhesion, and high resistivity in the metal thin film 107 caused by the synergistic effect of laser beam 105 and electron beam 104 in space and time in the prior art. At the same time, it completely avoids the problems of Ga in the FIBID process. + Contamination and lattice damage caused by ion implantation; the resulting nanoscale metal thin film 107 has high purity, high density, excellent interfacial adhesion, low resistivity and good long-term stability, which can meet the stringent requirements of advanced semiconductor devices, quantum computing chips and high-reliability micro-nano systems for high-performance metal interconnects.

[0032] As an alternative implementation, the laser beam 105 is generated by a KrF excimer laser, an ArF excimer laser, or an F2 excimer laser.

[0033] It should be noted that the laser beam 105 is generated by a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), or an F2 excimer laser (157 nm), with photon energies of approximately 5.0 eV, 6.4 eV, and 7.9 eV, respectively. These energies are sufficient to effectively excite and break the metal-ligand bonds (such as M–C and C–O bonds) in the precursor molecule, causing it to pre-dissociate into highly active intermediate fragments.

[0034] Building upon this, by spatially confocalizing and temporally synchronizing or quasi-synchronizing the laser beam 105 and electron beam 104 onto the precursor vapor-rich region 103 on the surface of the substrate 100, a synergistic effect of photo-preactivation and electron fine dissociation is achieved—the laser lowers the subsequent dissociation energy barrier, while the electron beam 104 provides nanoscale positioning and deep decomposition capabilities. This strategy significantly improves the integrity of precursor dissociation, greatly reduces carbon and oxygen residues, and completely avoids ion contamination in existing technologies, thereby directly depositing a high-purity, highly dense, strongly adherent, and electrically excellent nano-metallic thin film 107 in the predetermined region.

[0035] Reference Figure 1 , Figure 2 As shown, the electron beam 104 and the laser beam 105 are co-focused on the vapor enrichment region 103, even though they are not on the same axis.

[0036] Preferably, the electron beam 104 and the laser beam 105 are coaxial or have a predetermined spatial overlap area.

[0037] It should be noted that in this embodiment, the electron beam 104 and the laser beam 105 adopt a coaxial optical path design, or are precisely adjusted to form a preset spatial overlap region on the surface of the substrate 100, ensuring that they act on the same nanoscale target position. This design ensures that the photoexcitation and pre-dissociation effect of the laser on the precursor and the localized induced decomposition of the electron beam 104 are highly coordinated in space, avoiding the decrease in dissociation efficiency or deposition position deviation caused by beam spot offset, thereby achieving high-precision, high-purity, point-to-point deposition of the metal thin film 107.

[0038] As an optional implementation, before the precursor vapor is directionally delivered to the vicinity of the preset deposition region 102 via the gas injection device 109 to form a vapor enrichment region 103 near the preset deposition region 102, the method further includes the following steps: Reference Figure 4 As shown, oxygen-containing activation gas 106 is introduced into the vacuum chamber 101 so that the substrate 100 is in an atmosphere of oxygen-containing activation gas 106. An electron beam 104 is used to scan and irradiate a preset deposition region 102 of the substrate 100, causing an oxygen-containing activation gas 106 to generate active oxides under the action of the electron beam 104, thereby activating the surface of the preset deposition region 102.

[0039] It should be noted that before the precursor vapor is directionally transported to the vicinity of the preset deposition area 102 via the gas injection device 109 to form the vapor enrichment area 103, this method also includes a surface activation pretreatment step: First, an oxygen-containing activation gas 106 (such as water vapor, oxygen, or nitrogen dioxide) is introduced into the vacuum chamber 101, so that the substrate 100 is in a local oxygen-containing activation gas 106 atmosphere; then, the preset deposition area 102 of the substrate 100 is scanned and irradiated using a focused electron beam 104, causing the oxygen-containing activation gas 106 (e.g., H2O molecules) to dissociate in situ under the action of the electron beam 104 to generate active oxide species (such as hydroxyl radicals, atomic oxygen O, etc.), selectively cleaning and chemically activating the surface of the target area. This process not only effectively removes surface hydrocarbon contaminants, but more importantly, it introduces a high density of active hydroxyl groups (-OH) or other oxygen-containing functional groups on the surface of the substrate 100 (such as SiO2, Si, or metal oxides). During the subsequent deposition of the metal thin film 107, the metal precursor or nascent metal atoms can react chemically with these functional groups to form covalent or coordination bonds of the metal-oxygen-substrate type 100, rather than physical adsorption that relies solely on weak van der Waals forces as in traditional FEBID.

[0040] Since the binding energy of covalent bonds is typically tens to hundreds of kJ / mol, while van der Waals forces are only about 0.1–5 kJ / mol, the difference is more than a hundred times. Therefore, the improved interface bonding is significantly enhanced, greatly improving the adhesion, thermal stability and long-term reliability of the metal film 107, and effectively solving problems such as easy peeling of nanoscale metal structures and unstable contact resistance.

[0041] For example, introducing an oxygen-containing activation gas 106 into the vacuum chamber 101 to place the substrate 100 in an atmosphere of the oxygen-containing activation gas 106 includes: Water vapor is introduced into the vacuum chamber 101; wherein the flow rate of water vapor is 0.2-1 sccm.

[0042] An electron beam 104 is used to scan and irradiate a predetermined deposition region 102 of the substrate 100, causing an oxygen-containing activation gas 106 to generate active oxides under the action of the electron beam 104, thereby activating the surface of the predetermined deposition region 102, including: The electron beam 104 scans and irradiates the preset deposition area 102 for 5-20 seconds; wherein the landing voltage of the electron beam 104 is 0.6-20KV and the exposure beam current is 20pA-500nA.

[0043] It should be noted that before the precursor vapor is directionally delivered to the vicinity of the preset deposition area 102 via the gas injection device 109, it is necessary to extract excess oxygen-containing activation gas 106 by vacuuming, such as... Figure 5 As shown.

[0044] As an optional implementation, after simultaneously applying an electron beam 104 and a laser beam 105, and focusing both the electron beam 104 and the laser beam 105 onto the vapor-rich region 103 to dissociate the precursor vapor and deposit a metal thin film 107 on the surface of the substrate 100, the method further includes the following steps: Reference Figure 3 As shown, after the metal thin film 107 is deposited to a preset thickness, the electron beam 104 and the laser beam 105 are turned off; Extract the remaining precursor vapor from vacuum chamber 101; A high-energy electron beam 108 is used to scan and irradiate the metal thin film 107 to remove residual carbon impurities in situ; wherein, the accelerating voltage of the high-energy electron beam 108 is greater than the accelerating voltage of the electron beam 104 used in the deposition stage.

[0045] The preset thickness of the metal thin film 107 can be set by those skilled in the art as needed, and this application does not impose any special limitations on it. For example, after the metal thin film 107 is deposited to 50-80 nanometers, the electron beam 104 and the laser beam 105 are simultaneously turned off.

[0046] It should be noted that when the metal thin film 107 reaches the preset thickness, the electron beam 104 and laser beam 105 are simultaneously turned off to terminate the deposition reaction. Then, the residual precursor vapor in the vacuum chamber 101 is removed to prevent unexpected deposition or side reactions during subsequent processing. Next, a high-energy electron beam 108 is used to scan and irradiate the deposited metal thin film 107 to achieve in-situ removal of residual carbon impurities and densification of the film. The accelerating voltage of the high-energy electron beam 108 is significantly higher than that of the electron beam 104 used in the deposition stage (e.g., 1-5 kV in the deposition stage, increased to 10-30 kV in the post-processing stage), thereby giving electrons stronger penetration ability and higher energy transfer efficiency, effectively breaking residual organic bonds such as CC and CH in the film, and promoting the desorption of carbon in volatile forms such as CO and CO2. This post-processing process significantly improves the purity, density, and conductivity of the metal thin film 107 without introducing high temperatures or chemical corrosion, further enhancing its structural stability and device reliability.

[0047] As an optional implementation, the method of directionally delivering precursor vapor to the vicinity of a predetermined deposition region 102 via the gas injection device 109 to form a vapor enrichment zone 103 near the predetermined deposition region 102 further includes: Precursor vapor and nitrogen dioxide are simultaneously or alternately introduced through the gas injection device 109.

[0048] For example, a silicon substrate 100 is placed in a vacuum chamber 101, and an electron beam 104 and a KrF excimer laser beam 105 are confocalized onto a predetermined deposition region 102. Iron pentacarbonyl (Fe(CO)5) precursor vapor and nitrogen dioxide (NO2) are simultaneously introduced through a gas injection device 109, controlling the local gas phase partial pressure to be 4 × 10⁻⁶. -4 mbar and 2×10 -4 A mixed vapor enrichment region 103 containing precursors and NO2 is formed in a predetermined area using mbar. Under simultaneous irradiation by an electron beam 104 (accelerating voltage 5kV) and a laser beam 105, NO2 decomposes under irradiation to generate reactive oxygen species and nitrogen oxide free radicals, effectively promoting the breaking of Fe-CO bonds in Fe(CO)5 and oxidizing and removing carbon and oxygen from the ligands. After deposition, an iron thin film of approximately 70 nm is obtained; the metal purity is above 90%, and the film structure is dense with good adhesion.

[0049] For example, a pulsed alternating injection strategy is adopted: first, the gas injection device 109 is turned on to introduce W(CO)6 precursor vapor for 0.5 seconds, allowing it to adsorb and form a monolayer in a preset area; then, the precursor passage is turned off, and NO2 gas is immediately introduced for 0.3 seconds, and the adsorbed precursor is oxidized and dissociated under simultaneous irradiation by electron beam 104 and 248nm laser; the above adsorption-reaction cycle is repeated 20 times to complete the deposition of tungsten nanodot array. This method effectively avoids particulate contamination caused by premature reaction between the precursor and NO2 in the gas phase, resulting in a dense tungsten film structure with high purity.

[0050] It should be noted that nitrogen dioxide not only participates in the deposition process as an oxygen-containing reactive gas, but also decomposes under the action of electron beam 104 and / or laser beam 105 to generate active nitrogen oxide free radicals. These highly active species can efficiently oxidize and remove hydrocarbon components in precursor ligands, promote metal-carbon bond breaking, and thus significantly improve the purity of metal film 107.

[0051] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for depositing metal thin films, characterized in that, include: A substrate is placed in a vacuum chamber, and the surface of the substrate has a predetermined deposition area; The precursor vapor is directionally delivered to the vicinity of the preset deposition area through a gas injection device to form a vapor enrichment zone near the preset deposition area; An electron beam and a laser beam are applied simultaneously and focused onto the vapor-rich region via a confocal optical system, causing the precursor vapor to dissociate and deposit a metal thin film on the substrate surface.

2. The metal thin film deposition method according to claim 1, characterized in that, Before the precursor vapor is directionally delivered to the vicinity of the preset deposition area via a gas injection device to form a vapor enrichment zone near the preset deposition area, the method further includes the following steps: An oxygen-containing activation gas is introduced into the vacuum chamber so that the substrate is in an oxygen-containing activation gas atmosphere. An electron beam is used to scan and irradiate a predetermined deposition area of ​​the substrate, causing the oxygen-containing activation gas to generate active oxides under the action of the electron beam, thereby activating the surface of the predetermined deposition area.

3. The metal thin film deposition method according to claim 2, characterized in that, The step of introducing an oxygen-containing activation gas into the vacuum chamber to place the substrate in an oxygen-containing activation gas atmosphere includes: Water vapor is introduced into the vacuum chamber; wherein the flow rate of the water vapor is 0.2-1 sccm.

4. The metal thin film deposition method according to claim 3, characterized in that, The step of irradiating a predetermined deposition area of ​​the substrate with an electron beam to generate active oxides from the oxygen-containing activation gas under the action of the electron beam, thereby activating the surface of the predetermined deposition area, includes: The electron beam scan irradiates the preset deposition area for 5-20 seconds; wherein the landing voltage of the electron beam is 0.6-20KV and the exposure beam current is 20pA-500nA.

5. The metal thin film deposition method according to any one of claims 1-4, characterized in that, After the simultaneous application of an electron beam and a laser beam, both focused on the vapor-rich region to dissociate the precursor vapor and deposit a metal thin film on the substrate surface, the method further includes the following steps: After the metal thin film is deposited to a preset thickness, the electron beam and laser beam are turned off; Extract the remaining precursor vapor from the vacuum chamber; The metal thin film is scanned and irradiated with a high-energy electron beam to remove residual carbon impurities in situ; wherein the accelerating voltage of the high-energy electron beam is greater than the accelerating voltage of the electron beam used in the deposition stage.

6. The metal thin film deposition method according to claim 5, characterized in that, The accelerating voltage of the high-energy electron beam is 20-30kV.

7. The metal thin film deposition method according to any one of claims 1-4 and claim 6, characterized in that, The step of directionally delivering precursor vapor to the vicinity of the preset deposition area via a gas injection device to form a vapor enrichment zone near the preset deposition area further includes: The precursor vapor and nitrogen dioxide are simultaneously or alternately introduced through a gas injection device.

8. The metal thin film deposition method according to any one of claims 1-4 and claim 6, characterized in that, The laser beam is generated by a KrF excimer laser, an ArF excimer laser, or an F2 excimer laser.

9. The metal thin film deposition method according to any one of claims 1-4 and claim 6, characterized in that, The electron beam is coaxial with the laser beam or has a predetermined spatial overlap region.

10. The metal thin film deposition method according to claim 2, characterized in that, The oxygen-containing activating gas includes at least one of water vapor, oxygen, and nitrogen dioxide.

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