A method for fabricating organic field-effect transistors based on dry transfer of single-crystal film.

By employing single-crystal film dry transfer technology and functional modification, the contact resistance problem of bottom-contact organic field-effect transistors has been solved, resulting in high-performance transistors with high mobility and low contact resistance, suitable for flexible electronic devices.

CN122138558APending Publication Date: 2026-06-02ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG UNIV
Filing Date
2026-03-02
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

Existing technologies struggle to fabricate high-performance bottom-contact organic field-effect transistors that combine high mobility, high frequency response, and short-channel characteristics. This is mainly due to limitations in contact resistance, including interface roughness, morphological discontinuities, disordered molecular orientation, and the high-density interface states and Fermi level pinning effect at the interface between the metal electrode and the organic semiconductor.

Method used

The single-crystal dry transfer technology is adopted. By functionalizing the substrate and treating the substrate surface with substances such as phenyltrichlorosilane, and combining it with self-assembled monolayer to modify the source and drain electrodes, the organic semiconductor layer and the source and drain electrodes are in close contact. Vacuum heat treatment is used to ensure interface bonding and optimize interface energy level matching.

Benefits of technology

This technology improves the intrinsic mobility of organic field-effect transistors and reduces contact resistance, achieving a high-performance bottom contact structure with good stability and parameter consistency, making it suitable for flexible electronic devices.

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Abstract

This invention provides a method for fabricating an organic field-effect transistor (OFET) based on dry transfer of a single-crystal film. The method includes the following steps: depositing an organic semiconductor layer and a dielectric layer sequentially from bottom to top on a first substrate; forming source and drain electrodes on a second substrate; peeling off the composite organic semiconductor layer and dielectric layer from the first substrate and transferring them to cover the second substrate where the source and drain electrodes are formed, such that the source and drain electrodes on the second substrate are in contact with the organic semiconductor layer to form a carrier channel structure; and forming a gate electrode on the dielectric layer after film transfer to obtain the organic field-effect transistor. The organic field-effect transistor fabricated using the technical solution of this application exhibits extremely low contact resistance and high intrinsic mobility, thereby fully utilizing the intrinsic transport performance of organic semiconductors and showing significant advantages in improving the performance of OFET devices.
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