Method for manufacturing optical detection device, semiconductor device and optical detection device

Abstract

This invention provides a photodetector, a semiconductor device, and a method for manufacturing the photodetector that can reduce reliability degradation. The photodetector includes: a semiconductor substrate; an organic insulating film made of a light-transmitting organic material and disposed on a first side of the semiconductor substrate; a groove disposed on the organic insulating film and the semiconductor substrate, the groove having the semiconductor substrate as its bottom surface; a first inorganic insulating film made of a light-transmitting inorganic material and disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; and a second inorganic insulating film made of a light-transmitting inorganic material and disposed on the first inorganic insulating film. The semiconductor substrate has a first region on one side of the groove and a second region on the other side of the groove on its first side. The surface of the first inorganic insulating film is flat at least above the groove.

Description

Technical Field

[0001] This disclosure relates to a photodetector, a semiconductor device, and a method for manufacturing the photodetector. Background Technology

[0002] In recent years, the following imaging devices have been used in digital video cameras, digital cameras and the like: multiple charge-coupled devices (CCD) and complementary metal-oxide semiconductor (CMOS) elements arranged in two dimensions.

[0003] In CMOS image sensors, one method for achieving simultaneous charge accumulation is a global shutter structure that temporarily holds the signal in memory. In the case of the global shutter structure, the memory is located in the pixel, and the charge accumulated in the light-receiving unit is simultaneously transferred to the memory in all pixels and held until a read is performed on each row, thereby making the exposure time consistent across all pixels (see Patent Documents 1 and 2). Citation List Patent documents

[0004] Patent Document 1: Japanese Patent Application Publication No. 2012-129797 Patent Document 2: Japanese Patent Application Publication No. 2013-21533 Summary of the Invention The problem the invention aims to solve

[0005] Camera devices, such as CMOS image sensors, are manufactured by fabricating multiple camera devices on a substrate and then monolithically (cutting) the camera devices. For example, when moisture enters a single chip from the side, dew condenses and can potentially reduce the reliability of the camera device, such as causing image quality degradation.

[0006] This disclosure was developed in view of this situation, and the purpose of this disclosure is to provide a method for manufacturing a photodetector, a semiconductor device, and a photodetector capable of suppressing reliability degradation. Solution to the problem

[0007] A photodetector according to one aspect of this disclosure includes: a semiconductor substrate; an organic insulating film made of a light-transmitting organic material and disposed on a first side of the semiconductor substrate; a groove disposed in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; a first inorganic insulating film made of a light-transmitting inorganic material disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; and a second inorganic insulating film made of a light-transmitting inorganic material and disposed on the first inorganic insulating film. The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first side. The surface of the first inorganic insulating film is flat at least above the groove.

[0008] According to this configuration, since the groove separating the organic insulating film exists in the boundary region between the first and second regions, moisture can be prevented from entering the first region from the second region through the organic insulating film. Furthermore, in the first inorganic insulating film, at least the surface above the groove is flat, and the second inorganic insulating film is disposed on the flattened surface. Because the film-forming surface of the second inorganic insulating film is flat at least above the groove, it is easy to form a second inorganic insulating film with a uniform film thickness. As a result, even if seams (micro-gaps) appear in the first inorganic insulating film, the open end of the seam can be sealed by the second inorganic insulating film with a uniform film thickness, and moisture can be prevented from entering the interior of the photodetector from the open end of the seam. In summary, since the moisture-proof performance of the photodetector can be improved, the reduction in the reliability of the photodetector can be suppressed.

[0009] A semiconductor device according to one aspect of this disclosure includes: a semiconductor substrate; an organic insulating film made of an organic material and disposed on a first side of the semiconductor substrate; a groove disposed in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as a bottom surface; a first inorganic insulating film made of an inorganic material disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; and a second inorganic insulating film made of an inorganic material disposed on the first inorganic insulating film. The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first side. The surface of the first inorganic insulating film is flat at least above the groove.

[0010] According to this configuration, since the groove separating the organic insulating film exists in the boundary region between the first and second regions, moisture can be prevented from entering the first region from the second region through the organic insulating film. Furthermore, in the first inorganic insulating film, at least the surface above the groove is flat, and the second inorganic insulating film is disposed on the flattened surface. Since the film-forming surface of the second inorganic insulating film is flat at least above the groove, it is easy to form a second inorganic insulating film with a uniform film thickness. As a result, even if seams (micro-gaps) appear in the first inorganic insulating film, the opening end of the seam can be sealed by the second inorganic insulating film with a uniform film thickness, and moisture can be prevented from entering the semiconductor device from the opening end of the seam. In summary, since the moisture resistance of the semiconductor device can be improved, the reduction in the reliability of the semiconductor device can be suppressed.

[0011] According to one aspect of the present invention, a method for manufacturing a photodetector includes the following steps: forming an organic insulating film made of a light-transmitting organic material on a first side of a semiconductor substrate; etching the organic insulating film and the semiconductor substrate to form a groove in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; forming a first inorganic insulating film made of a light-transmitting inorganic material on the first side of the semiconductor substrate to cover the organic insulating film and fill the groove; forming a planarization film on the first inorganic insulating film to planarize the surface of the first side of the semiconductor substrate; etching back the planarization film and the first inorganic insulating film to planarize the surface of the first inorganic insulating film at least above the groove; and forming a second inorganic insulating film made of a light-transmitting inorganic material on the planarized surface of the first inorganic insulating film.

[0012] Based on this configuration, it is possible to manufacture a highly reliable camera device with high moisture resistance. Attached Figure Description

[0013] Figure 1 This is a block diagram illustrating an example of the overall configuration of a camera device according to an embodiment of the present disclosure. Figure 2 This is a plan view showing an example of the configuration of the pixel region of a camera device according to an embodiment of the present disclosure. Figure 3 This is a cross-sectional view showing an example of the configuration of an effective pixel region according to an embodiment of the present disclosure. Figure 4 This is a cross-sectional view showing an example of the configuration of the groove and its surrounding portion of the pixel region according to an embodiment of the present disclosure. Figure 5A This is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 5BThis is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 5C This is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 5D This is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 5E This is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 5F This is a cross-sectional view illustrating a method for manufacturing a pixel region according to an embodiment of the present disclosure. Figure 6 This is a cross-sectional view showing the configuration of the groove and its periphery in a pixel region according to a comparative example of this disclosure. Figure 7A This is a cross-sectional view showing a method for manufacturing a pixel region according to a comparative example of the present disclosure. Figure 7B This is a cross-sectional view showing a method for manufacturing a pixel region according to a comparative example of the present disclosure. Figure 7C This is a cross-sectional view showing a method for manufacturing a pixel region according to a comparative example of the present disclosure. Figure 7D This is a cross-sectional view showing a method for manufacturing a pixel region according to a comparative example of the present disclosure. Figure 8 This is a cross-sectional view showing the configuration of the effective pixel region of a pixel region according to a first variation of an embodiment of the present disclosure. Figure 9 This is a cross-sectional view showing the configuration of the groove and its periphery of a pixel region according to a first modified embodiment of the present disclosure. Figure 10 This is a cross-sectional view showing the configuration of the effective pixel region of a pixel region according to a second variation of an embodiment of the present disclosure. Figure 11 This is a cross-sectional view showing the configuration of the groove and its periphery in a pixel region according to a second variation of an embodiment of the present disclosure. Figure 12 This is a cross-sectional view showing the configuration of the effective pixel region of a pixel region according to a third variation of an embodiment of the present disclosure. Figure 13 This is a cross-sectional view showing the configuration of the groove and its periphery in a pixel region according to a third variation of an embodiment of the present disclosure. Figure 14 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology according to this disclosure can be applied. Figure 15This is a diagram showing an example of the camera unit's installation location. Detailed Implementation

[0014] In the following description, embodiments of the present disclosure will be described with reference to the accompanying drawings. In the illustrations of the drawings referenced in the following description, identical or similar portions are indicated by identical or similar reference numerals. It should be noted that the drawings are schematic, and the relationships between thicknesses and planar dimensions, thickness ratios between layers, etc., differ from actual dimensions. Therefore, the following description should be considered to determine specific thicknesses and dimensions. Furthermore, it is self-evident that the dimensional relationships and scale portions differ between the drawings.

[0015] Furthermore, the definitions of directions such as up and down in the following description are for illustrative purposes only and are not intended to limit the technical concept of this disclosure. For example, it is self-evident that when an object is rotated 90° for observation, up and down are converted to left and right, and when an object is rotated 180° for observation, up and down are reversed.

[0016] Furthermore, in the following description, terms such as X-axis direction, Y-axis direction, and Z-axis direction are sometimes used to describe directions. For example, the X-axis direction and Y-axis direction are directions parallel to the back surface 10b of the semiconductor substrate 10. The Z-axis direction is the normal direction of the back surface 10b of the semiconductor substrate 10 and is also the thickness direction of the semiconductor substrate 10. The X-axis direction, Y-axis direction, and Z-axis direction are orthogonal to each other.

[0017] Furthermore, in the following description, "plan view" refers to a view taken from the normal direction of the back surface 10b of the semiconductor substrate 10, for example, a view taken from the Z-axis direction.

[0018] <Example> (Example of the overall structure of a camera device) Figure 1 This is a block diagram illustrating an overall configuration example of an imaging device 1 according to an embodiment of the present disclosure. The imaging device 1 is an example of a "light detection device" of the present disclosure, and for example, is a back-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor used in electronic devices such as digital cameras or digital camcorders. The imaging device 1 captures incident light (image light) from a subject via an optical lens system (not shown), converts the amount of incident light forming an image on the imaging surface into an electrical signal on a pixel-by-pixel basis, and outputs the electrical signal as a pixel signal.

[0019] like Figure 1 As shown, the camera device 1 includes multiple pixels 12, a vertical drive circuit 13, a column signal processing circuit 14, a horizontal drive circuit 15, an output circuit 16, and a control circuit 17.

[0020] Pixel 12 is a light-receiving area that receives light collected by an optical system (not shown). Multiple pixels 12 are arranged in a matrix within pixel regions 11 of the semiconductor substrate 10. Each row of pixels 12 is connected to a vertical drive circuit 13 via horizontal signal lines 22, and each column is connected to a column signal processing circuit 14 via vertical signal lines 23. Each of the multiple pixels 12 outputs a pixel signal at a level corresponding to the amount of light received. An image of the subject is constructed based on these pixel signals.

[0021] The vertical drive circuit 13 provides drive signals for driving (transfer, selection, reset, etc.) each pixel 12 to each row of the plurality of pixels 12 via the horizontal signal line 22. The column signal processing circuit 14 performs correlated double sampling (CDS) processing on the pixel signals output from the plurality of pixels 12 via the vertical signal line 23, thereby performing AD conversion on the pixel signals and removing reset noise.

[0022] The horizontal drive circuit 15 sequentially provides drive signals to the column signal processing circuit 14 for each column of pixels 12, causing the column signal processing circuit 14 to output pixel signals to the data output signal line 24. The output circuit 16 amplifies the pixel signals provided from the column signal processing circuit 14 via the data output signal line 24 according to the timing of the drive signals from the horizontal drive circuit 15, and outputs them to the subsequent signal processing circuit. The control circuit 17 controls the driving of each block within the imaging device 1. For example, the control circuit 17 generates a clock signal according to the driving cycle of each block and provides it to each block.

[0023] Pixel 12 includes a photodiode 31, a transmission transistor 32, a floating diffuser 33, an amplifying transistor 34, a selecting transistor 35, and a reset transistor 36. The transmission transistor 32, the floating diffuser 33, the amplifying transistor 34, the selecting transistor 35, and the reset transistor 36 constitute a readout circuit 30 (an example of a "semiconductor device" of this disclosure), which reads out the charge (pixel signal) converted by photodiode 31.

[0024] The photodiode 31 is a photoelectric conversion unit that converts incident light into electrical charge and accumulates the charge through photoelectric conversion. It has a grounded anode terminal and a cathode terminal connected to the transmission transistor 32. The transmission transistor 32 is driven according to the transmission signal TRG provided from the vertical drive circuit 13. When the transmission transistor 32 is turned on, the charge accumulated in the photodiode 31 is transferred to the floating diffusion section 33. The floating diffusion section 33 is a floating diffusion region with a predetermined storage capacity that is connected to the gate electrode of the amplifying transistor 34, and temporarily stores the charge transferred from the photodiode 31.

[0025] The amplifying transistor 34 outputs a pixel signal to the vertical signal line 23 via the selecting transistor 35, which corresponds to the level of the charge accumulated in the floating diffuser 33 (i.e., the potential of the floating diffuser 33). In other words, through the configuration in which the floating diffuser 33 is connected to the gate electrode of the amplifying transistor 34, the floating diffuser 33 and the amplifying transistor 34 serve as a conversion unit that amplifies the charge generated in the photodiode 31 and converts the charge into a pixel signal with a level corresponding to the charge.

[0026] The selection transistor 35 is driven by the selection signal SEL provided from the vertical drive circuit 13. When the selection transistor 35 is turned on, the pixel signal output from the amplification transistor 34 can be output to the vertical signal line 23. The reset transistor 36 is driven by the reset signal RST provided from the vertical drive circuit 13. When the reset transistor 36 is turned on, the charge accumulated in the floating diffuser 33 is discharged to the drain power supply Vdd, and the charge amount in the floating diffuser 33 is reset.

[0027] (Example of pixel region composition) Figure 2 This is a plan view showing an example of the configuration of the pixel region 11 of the imaging device 1 according to an embodiment of the present disclosure. Figure 2 As shown, pixel region 11 includes an effective pixel region 111 (an example of the "first region" of this disclosure), an ineffective pixel region 112 (an example of the "second region" of this disclosure) disposed between the effective pixel region 110 and the outer periphery of the semiconductor substrate 10, and a boundary region 113 disposed between the effective pixel region 111 and the ineffective pixel region 112. For example, the ineffective pixel region 112 is disposed at both ends of the effective pixel region 111 in the X-axis and Y-axis directions, separated by the boundary region 113. In the plan view, the effective pixel region 111 is surrounded by the ineffective pixel region 112, wherein the boundary region 113 is inserted between the effective pixel region 111 and the ineffective pixel region 112.

[0028] The effective pixel region 111 includes pixels 12 disposed on the semiconductor substrate 10 (see...). Figure 1 The signal generated by photoelectric conversion in pixel 12 is output. For example, in the effective pixel area 111, multiple pixels 12 are arranged side by side in both the row and column directions. Hereinafter, the pixels 12 in the effective pixel area 111 are also referred to as effective pixels. The effective pixels are connected to the column signal processing circuit 14 (see vertical signal line 23) via vertical signal line 23. Figure 1 The effective pixel receives the incident light, amplifies the pixel signal generated by photoelectric conversion, and outputs the amplified pixel signal to the column signal processing circuit 14.

[0029] Invalid pixel region 112 does not output signals generated by photoelectric conversion. For example, in invalid pixel region 112, multiple pixels 12 are arranged side by side in both the row and column directions. Hereinafter, the pixels 12 located in invalid pixel region 11B are also referred to as invalid pixels. Invalid pixels are not connected to column signal processing circuit 14 (see...). Figure 1 ), and also does not output pixel signals to column signal processing circuit 14. Alternatively, the invalid pixel area 11B may not have pixel 12 set.

[0030] The groove H is set in the boundary region 113. In the plan view, the groove H surrounds the effective pixel region 11A without gaps. (See later...) Figure 4 Explain the configuration of the groove H and its surrounding area.

[0031] Figure 3 This is a cross-sectional view showing an example of the configuration of the effective pixel region 111 of the pixel region 11 according to an embodiment of the present disclosure. Figure 3 The cross-sectional view shown is along Figure 2 The enlarged cross-sectional view taken by line A-A' in the plan view shown. Figure 4 This is a cross-sectional view showing an example of the configuration of the groove H and its surrounding portion of the pixel region 11 according to an embodiment of the present disclosure. Figure 4 The cross-sectional view shown is along Figure 2 The enlarged cross-sectional view taken by line B-B' in the plan view shown.

[0032] like Figure 3 As shown, the imaging device 1 includes: a semiconductor substrate 10; and a back surface 10b of the semiconductor substrate 10 made of a light-transmitting material (on the back surface 10b of the semiconductor substrate 10). Figure 3 and Figure 4 The membrane comprises: an anti-reflective film 51 on the upper surface (of which the membrane is located); an inorganic insulating film 53 made of a light-transmitting inorganic material and disposed on the anti-reflective film 51; an organic insulating film 55 made of a light-transmitting organic material and disposed on the inorganic insulating film 53 (an example of the "first organic insulating film" of this disclosure); a color filter CF disposed on the organic insulating film 55; an organic insulating film 57 made of a light-transmitting organic material and disposed on the color filter CF (an example of the "second organic insulating film" of this disclosure); an inorganic insulating film 61 made of a light-transmitting inorganic material and disposed on the organic insulating film 57 (an example of the "first inorganic insulating film" of this disclosure); and an inorganic insulating film 63 made of a light-transmitting inorganic material and disposed on the inorganic insulating film 61 (an example of the "second inorganic insulating film" of this disclosure). The color filter CF is located between the organic insulating film 55 and the organic insulating film 57. The laminated film of the anti-reflective film 51 and the inorganic insulating film 53 is an example of the "insulating film" of this disclosure.

[0033] Transparent materials are those that can transmit light of the wavelength component to be detected (e.g., visible light, infrared, etc.). Transparent materials are preferably colorless and transparent, but are not limited to this, and can also be colored and transparent. This also applies to transparent inorganic and organic materials.

[0034] like Figure 3 and Figure 4 As shown, the semiconductor substrate 10 has a front surface 10a and a back surface 10b (an example of the "first surface" of this disclosure) and is made of, for example, silicon. On the semiconductor substrate 10, corresponding photodiodes (PDs) 31 of a plurality of pixels 12 are arranged in a two-dimensional matrix. For example, in the pixel region 11 of the semiconductor substrate 10, the photodiodes 31 of effective pixels are arranged in the effective pixel region 111, the photodiodes 31 of ineffective pixels are arranged in the ineffective pixel region 112, and no pixels are arranged in the boundary region 113 between the effective pixel region 111 and the ineffective pixel region 112. Alternatively, pixels may not be arranged not only in the boundary region 113 but also in the ineffective pixel region 112.

[0035] like Figure 3 As shown, in the effective pixel region 111, a component separation section 41 is disposed between a photodiode 31 of one pixel 12 and a photodiode 31 of another pixel 12 that are adjacent to each other in the X-axis and Y-axis directions. The component separation section 41 electrically separates the adjacent photodiodes 31 from each other. For example, the component separation section 41 includes a trench disposed from the back surface 10b of the semiconductor substrate 10 toward the front surface 10a and an insulating film (e.g., a silicon oxide film) filled in the trench. The trench may or may not penetrate the semiconductor substrate 10 in the thickness direction (e.g., in the Z-axis direction). Figure 3 The trench is shown in a manner in which it does not penetrate the semiconductor substrate 10 (i.e., the trench is located at the middle position in the depth direction of the semiconductor substrate 10).

[0036] For example, Figure 3 and Figure 4 The antireflective film 51 shown has a laminated structure in which a fixed charge film and an oxide film are laminated, and, for example, an insulating thin film with a high dielectric constant (high-k) can be used by an atomic layer deposition (ALD) method. Specifically, hafnium oxide (HfO2), aluminum oxide (Al2O3), titanium oxide (TiO2), strontium titanate (STO), etc., can be used. As an example, the antireflective film 51 can be formed by laminating a hafnium oxide film, an aluminum oxide film, and a silicon oxide film.

[0037] For example, the inorganic insulating film 53 is a silicon oxide (SiO2) film. Alternatively, the inorganic insulating film 53 can be a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, etc. The inorganic insulating film 53 can be any one or more laminated films including silicon oxide (SiO2) film, silicon nitride (SiN) film, and silicon oxynitride (SiON) film.

[0038] The organic insulating film 55 is a planarization film used to planarize the base of the color filter CF. For example, the organic insulating film 55 is made of a light-transmitting organic material such as acrylic resin or styrene resin.

[0039] A color filter CF is disposed on an organic insulating film 55. The color filter CF has multiple filter components. For example, the color filter CF has a first filter component, a second filter component, and a third filter component for each pixel 12. As an example, the first filter component, the second filter component, and the third filter component are a green filter component (G), a red filter component (R), and a blue filter component (B), respectively.

[0040] Note that the first, second, and third filter components are not limited to those described above and can be filter components of any color. Furthermore, at least one or more of the first, second, and third filter components may not be color filter components, and may, for example, be filter components that attenuate visible light, such as transparent resin that transmits visible light or ND filters formed by adding carbon black dye to transparent resin. The filter components of each pixel 12 are isolated from each other by partition walls 43.

[0041] The organic insulating film 57 is a planarization film used to planarize the upper part of the color filter CF. For example, the organic insulating film 57 is made of a light-transmitting organic material such as acrylic resin or styrene resin.

[0042] For example, the inorganic insulating film 61 is a silicon nitride (SiN) film. Alternatively, the inorganic insulating film 61 can be a silicon oxide (SiO2) film, a silicon oxynitride (SiON) film, etc. In the effective pixel region 111, an on-chip lens OCL (an example of the "lens body" of this disclosure) is disposed on the light incident surface side of the inorganic insulating film 61 (in the light incident surface side of the inorganic insulating film 61). Figure 3 and Figure 4 (In the middle, on the upper surface side). For example, an on-chip lens 90 is arranged in each of the plurality of pixels 12.

[0043] For example, the inorganic insulating film 63 is a silicon nitride (SiN) film. Alternatively, the inorganic insulating film 61 can be a silicon oxide (SiO2) film, a silicon oxynitride (SiON) film, etc.

[0044] Note that, in order to suppress the reflection of light incident on the on-film lens OCL at the interface between the on-film lens OCL and the inorganic insulating film 63, the inorganic insulating film 63 is preferably made of the same material as the inorganic insulating film 61 constituting the on-film lens OCL or a material with a lower refractive index than the inorganic insulating film 61.

[0045] For example, when the inorganic insulating film 61 is a SiN film, the inorganic insulating film 63 is preferably a SiN film, a SiON film, or a SiO2 film. SiON films or SiO2 films have a lower refractive index than SiN films. Furthermore, when the inorganic insulating film 61 is a SiON film, the inorganic insulating film 63 is preferably a SiON film or a SiO2 film. SiO2 films have a lower refractive index than SiON films. When the inorganic insulating film 61 is a SiO2 film, the inorganic insulating film 63 is also preferably a SiO2 film.

[0046] like Figure 4 As shown, a groove H is disposed in an organic insulating film 57, an organic insulating film 55, an inorganic insulating film 53, an anti-reflective film 51, and a semiconductor substrate 10, wherein the semiconductor substrate 10 is the bottom surface HB. The side surface of the groove H is inclined, such that the width of the groove H increases as it approaches the opening side of the groove H from the bottom surface HB (in... Figure 4 The width of the groove H is [missing information - likely a number or feature]. The groove is enlarged (i.e., becomes a right cone shape) from the top side. Figure 4 The length along the X-axis.

[0047] For example, the side of the groove H has a side HSb (an example of the “first side” of this disclosure) disposed on the semiconductor substrate 10, a side HSm (an example of the “third side” of this disclosure) disposed on the anti-reflective film 51 and the inorganic insulating film 53, and a side HST (an example of the “second side” of this disclosure) disposed on the organic insulating film 55 and the organic insulating film 57.

[0048] Each of the sides HSb, HSm, and HSt is inclined, such that the width of the groove H increases as it approaches the opening side from the bottom surface HB of the groove H (i.e., it is conical). Furthermore, side HSt is recessed relative to sides HSm and HSb in the direction that widens the width of the groove H. A height difference is created between side HSt and side HSm.

[0049] The inorganic insulating film 61 covers the organic insulating films 55 and 57 and fills the groove H. As described above, since the sides of the groove H are inclined in a positive cone shape, for example, it is easier to fill the groove H with the inorganic insulating film 61 without gaps compared to the case where the sides are inclined in an inverted cone shape.

[0050] In addition, such as Figure 4As shown, the surface of the inorganic insulating film 61 (i.e., the interface between the inorganic insulating film 61 and the inorganic insulating film 63) is continuously flat from the effective pixel region 111 around the groove H through the region above the groove H to the ineffective pixel region 112. As a result, it is easy to form an inorganic insulating film 63 with a uniform film thickness from the effective pixel region 111 around the groove H through the region above the groove H to the ineffective pixel region 112.

[0051] Here, the film-forming surfaces of the portion of the inorganic insulating film 61 filled into the groove H are the bottom surface HB and the side surfaces HSb, HSm, and HSt of the groove H. The bottom surface HB of the groove H is a plane parallel to or substantially parallel to the back surface 10b of the semiconductor substrate 10. The side surfaces HSb, HSm, and HSt of the groove H are inclined surfaces relative to the back surface 10b of the semiconductor substrate 10. The inclination angles of the side surfaces HSb, HSm, and HSt are different from each other.

[0052] With Figure 4 As with the inorganic insulating film 61 shown, when multiple regions with different tilt angles exist on the film-forming surface, seams are likely to appear starting from the corners between adjacent regions (e.g., the corner between the bottom surface HB and the side surface HSb, the corner between the side surface HSb and the side surface HSm, the corner between the upper surface of the inorganic insulating film 53 and the side surface HST, etc.). Seams are tiny gaps that are generated during film formation.

[0053] In the camera device 1 according to an embodiment of the present disclosure, such as Figure 4 As shown, even when a seam 611 is formed in the inorganic insulating film 61 filling the groove H, the open end 611E of the seam 611 (i.e., the portion appearing on the surface of the inorganic insulating film 61 in the seam 611) can be covered by the inorganic insulating film 63. As described above, since the inorganic insulating film 63 is formed to have a uniform film thickness from the effective pixel area 111 around the groove H through the area above the groove H to the ineffective pixel area 112, the open end 611E of the seam 611 can be closed with high reproducibility.

[0054] Note that, although Figure 4 This illustration shows a configuration where the color filter CF is not positioned in the region adjacent to the recess H within the effective pixel region 111, but this embodiment is not limited thereto. In embodiments of this disclosure, similar to... Figure 3 The color filter CF can also be arranged in the effective pixel area 111 in the area adjacent to the groove H.

[0055] Although not shown, the gate electrode (i.e., the transmission gate) of the transmission transistor 32, the amplification transistor 34, the selection transistor 35, and the reset transistor 36 (see...) Figure 1 The wiring layer connected thereto is disposed on the front surface 10a side of the semiconductor substrate 10.

[0056] (Manufacturing method) Next, a method for manufacturing the camera device 1 according to an embodiment of the present disclosure will be described. Here, a method for manufacturing the camera device 1 will be described. Figure 4 The manufacturing method of the imaging device 1 shown is illustrated. Note that the imaging device 1 is manufactured using various apparatuses such as film deposition apparatuses (including chemical vapor deposition (CVD) apparatuses, sputtering apparatuses, and ALD apparatuses), etching apparatuses, and chemical mechanical polishing (CMP) apparatuses. These apparatuses are collectively referred to as manufacturing apparatuses.

[0057] Figures 5A to 5F This is a cross-sectional view illustrating a method for manufacturing pixel region 11 according to an embodiment of the present disclosure. Note that... Figures 5A to 5F Corresponding to Figure 4 The recess H and its surrounding area of ​​pixel region 11 shown.

[0058] exist Figure 5A In this process, the manufacturing apparatus forms an anti-reflective film 51 on the back side 10b of the semiconductor substrate 10. Next, the manufacturing apparatus forms an inorganic insulating film 53 on the anti-reflective film 51. Next, the manufacturing apparatus forms an organic insulating film 55 on the inorganic insulating film 53. For example, the organic insulating film 55 is formed by spin coating. As a result, the color filter CF (see [link to product]) formed in subsequent steps... Figure 3 The base of the filter is planarized. Next, the manufacturing apparatus forms a color filter CF (see [reference]) on the organic insulating film 55 in the effective pixel region 111. Figure 3 ).

[0059] Next, the manufacturing apparatus forms an organic insulating film 57. The organic insulating film 57 is formed on the color filter CF in the effective pixel region 111, and also on the organic insulating film 55 in the ineffective pixel region 112 and the boundary region 113 (see...). Figure 4 For example, an organic insulating film 57 is formed by spin coating. As a result, the upper part of the color filter CF (see...) Figure 3 () is flattened.

[0060] Next, the manufacturing apparatus forms a resist pattern 71 on the organic insulating film 55. For example, the resist pattern 71 has a shape that opens above the planned area where the groove H is to be formed and covers other areas. Next, as... Figure 5B As shown, the manufacturing apparatus uses a resist pattern 71 as a mask to sequentially dry etch organic insulating films 57 and 55, inorganic insulating film 53, anti-reflective film 51, and the back surface 10b side of semiconductor substrate 10 to form a groove H. After forming the groove H, as... Figure 5CAs shown, the manufacturing apparatus removes the resist pattern 71.

[0061] Next, as Figure 5D As shown, the manufacturing apparatus forms an inorganic insulating film 61 on the back side 10b of the semiconductor substrate 10 to cover the organic insulating film 57 and fill the groove H. For example, the inorganic insulating film 61 is formed by CVD. (Refer to...) Figure 4 As mentioned above, since there are multiple regions with different tilt angles on the film-forming surface of the portion of the inorganic insulating film 61 that fills the groove H, a seam 611 may occur. Furthermore, a recess 612 reflecting the shape of the groove H is formed on the surface of the inorganic insulating film 61.

[0062] Next, as Figure 5E As shown, the manufacturing apparatus forms an organic insulating film 73 (an example of a "planarization film" of this disclosure) on an inorganic insulating film 61. For example, the organic insulating film 73 is formed by spin coating. As a result, the recess 612 is filled with the organic insulating film 73, and the upper part of the back surface 10b of the semiconductor substrate 10 is planarized.

[0063] Next, the manufacturing apparatus partially forms a photoresist 75 on the inorganic insulating film 61. For example, the shape of the photoresist 75 is the same as or substantially the same as the shape of the on-chip lens OCL (see...). Figure 3 and Figure 4 Photoresist 75 is formed only above the planned area where the on-chip lens OCL is to be formed.

[0064] Next, the manufacturing apparatus etches back an organic insulating film 73 containing photoresist 75 and an inorganic insulating film 61 located below the organic insulating film 73. As a result, as... Figure 5F As shown, the surface of the inorganic insulating film 61 extends from the effective pixel region 111 around the groove H (see... Figure 4 ) Through the area above the groove H to the invalid pixel area 112 (see Figure 4 The image is planarized. Furthermore, in the effective pixel area 111, an on-chip lens OCL reflecting the shape of the photoresist 75 is formed.

[0065] Note that in this etching process, it is preferable to set dry etching conditions such that the etching rate of the organic insulating film 73 and the etching rate of the inorganic insulating film 61 are the same or substantially the same. Furthermore, in this etching process, it is more preferable to set dry etching conditions such that the etching rates of the photoresist 75, the organic insulating film 73, and the inorganic insulating film 61 are the same or substantially the same.

[0066] Next, the manufacturing apparatus forms an on-chip lens OCL in the effective pixel region 111 and forms an inorganic insulating film 63 on the inorganic insulating film 61 that is planarized above the groove H (see Figure 3 and Figure 4 The above steps have completed the process. Figure 3 and Figure 4 The pixel area shown is 11.

[0067] (Comparative example) Next, a comparative example will be described to compare with the embodiments of this disclosure. Figure 6 This is a cross-sectional view showing the configuration of the groove H' and its surrounding portion in the pixel region 11' according to a comparative example of this disclosure. Figure 6 In the comparative example shown, the bottom surface of the groove H' is exposed from the inorganic insulating films 61 and 63. Furthermore, the sides of the groove H' are covered by the inorganic insulating film 63, but not by the inorganic insulating film 61. Because multiple regions with different tilt angles exist on the film-forming surface of the inorganic insulating film 63, a seam 631 is formed in the inorganic insulating film 63. The open end of the seam 631 is not covered by other inorganic insulating films and is exposed.

[0068] Figures 7A to 7D This is a cross-sectional view illustrating a manufacturing method of pixel region 11' according to a comparative example of this disclosure. Figure 7A As shown, in the manufacturing method of pixel region 11' according to the comparative example, after forming the on-chip lens OCL on the inorganic insulating film 61, a resist pattern 71' is formed. The resist pattern 71' has a shape that opens above the planned area where the groove H' is to be formed and covers other areas. Next, as... Figure 7B As shown, the manufacturing apparatus uses a resist pattern 71' as a mask to sequentially dry etch the inorganic insulating film 61, organic insulating films 57 and 55, inorganic insulating film 53, anti-reflective film 51, and the back surface 10b side of the semiconductor substrate 10 to form a groove H'. After forming the groove H', the manufacturing apparatus removes the resist pattern 71'.

[0069] Next, as Figure 7C As shown, the manufacturing apparatus forms an inorganic insulating film 63. At this time, a seam 631 appears in the inorganic insulating film 63. Then, as... Figure 7D As shown, the manufacturing apparatus etches back the inorganic insulating film 63. Through the above steps, the process is completed. Figure 6 The pixel region shown is 11'.

[0070] In a comparative example, it is also conceivable to further form another insulating film (not shown) on the inorganic insulating film 63 on which the seam 631 is formed. However, even when this method is used, since there are multiple regions with different tilt angles in the inorganic insulating film 61, which serves as the film-forming surface of the other insulating film, it is likely that another insulating layer with uneven film thickness will be formed, and it is considered difficult to completely prevent the opening end of the seam 631. Furthermore, since another insulating film is formed on the on-chip lens OCL, the optical properties of the on-chip lens OCL may fluctuate.

[0071] (Effects of the example) As described above, the imaging device 1 according to an embodiment of the present disclosure includes: a semiconductor substrate 10; organic insulating films 55 and 57 made of a light-transmitting organic material and disposed on the back side 10b of the semiconductor substrate 10; a groove H disposed on the organic insulating films 55 and 57 and the semiconductor substrate 10, making the semiconductor substrate 10 the bottom surface; an inorganic insulating film 61 made of a light-transmitting inorganic material and disposed on the back side 10b of the semiconductor substrate 10, the inorganic insulating film 61 covering the organic insulating films 55 and 57 and filling the groove H; and an inorganic insulating film 63 made of a light-transmitting inorganic material and disposed on the inorganic insulating film 61. The semiconductor substrate 10 has an effective pixel region 111 located on one side separated by the groove H and an ineffective pixel region 112 located on the other side separated by the groove H on the back side 10b. The surface of the inorganic insulating film 61 is flat at least above the groove H. More preferably, the surface of the inorganic insulating film 61 is continuously flat from the effective pixel region 111 around the groove H through the region above the groove H to the ineffective pixel region 112.

[0072] According to this configuration, since a groove H separating the organic insulating films 55 and 57 exists in the boundary region 113 between the effective pixel region 111 and the ineffective pixel region 112, moisture can be prevented from entering the effective pixel region 111 from the ineffective pixel region 112 through the organic insulating films 55 and 57. Furthermore, in the inorganic insulating film 61, at least the surface above the groove H is flat, and the inorganic insulating film 63 is disposed on the flattened surface. Since the film-forming surface of the inorganic insulating film 63 is flat at least above the groove H, it is easy to form an inorganic insulating film 63 with a uniform film thickness. As a result, even if a seam 611 (micro-gap) appears in the inorganic insulating film 61, the opening end of the seam 611 can be sealed by the inorganic insulating film 63 with a uniform film thickness, and moisture can be prevented from entering the camera device 1 from the opening end of the seam 611. In summary, since the moisture-proof performance of the camera device 1 can be improved, the reduction in the reliability of the camera device 1 can be suppressed.

[0073] Furthermore, the inorganic insulating film 61 covers the organic insulating films 55 and 57 and fills the groove H. The portion of the inorganic insulating film 61 that fills the groove H supports the organic insulating films 55 and 57 on the sides and acts as a sidewall. As a result, even if unexpected stress is applied between the color filter CF, the organic insulating films 55 and 57, and the inorganic insulating films 61 and 63, the effects of stress can be suppressed.

[0074] In the aforementioned imaging device 1, the effective pixel area 111 is preferably surrounded by the groove H. As a result, the organic insulating films 55 and 57 can be completely separated between the effective pixel area 111 and the ineffective pixel area 112, and moisture can be further prevented from entering the effective pixel area 111 from the ineffective pixel area 112 through the organic insulating films 55 and 57.

[0075] A method for manufacturing an imaging device 1 according to an embodiment of the present disclosure includes: forming organic insulating films 55 and 57 made of a light-transmitting organic material on the back side 10b side of a semiconductor substrate 10; etching the organic insulating films 55 and 57 and the semiconductor substrate 10 to form a groove H on the organic insulating films 55 and 57 and the semiconductor substrate 10, with the semiconductor substrate 10 serving as the bottom surface; forming an inorganic insulating film 61 made of a light-transmitting inorganic material on the back side 10b side of the semiconductor substrate 10 to cover the organic insulating films 55 and 57 and fill the groove H; forming an organic insulating film 73 on the inorganic insulating film 61 to planarize the surface of the back side 10b side of the semiconductor substrate 10; etching back the organic insulating film 73 and the inorganic insulating film 61 to planarize the surface of the inorganic insulating film 61 at least above the groove H; and forming an inorganic insulating film 63 made of a light-transmitting inorganic material on the planarized surface of the inorganic insulating film 61. Based on this configuration, a highly reliable imaging device 1 with high moisture resistance can be manufactured.

[0076] (Modifications of the embodiments) In the above embodiments, for example, such as Figure 3 and Figure 4 As shown, the camera device 1 includes organic insulating films 55 and 57. However, in embodiments of this disclosure, either or both of the organic insulating films 55 and 57 may be omitted.

[0077] (1) First variant example Figure 8 This is a cross-sectional view showing the configuration of the effective pixel region 111 of the pixel region 11A according to a first variation of the present disclosure. Figure 9 This is a cross-sectional view showing the configuration of the groove H and its surrounding portion of the pixel region 11A according to a first modified example of an embodiment of the present disclosure. Figure 8 and Figure 9 The pixel region 11A shown is Figure 3 and Figure 4 The example shown is a variation of pixel region 11. Figure 8 and Figure 9 As shown, no organic insulating film 55 is provided in pixel area 11A.

[0078] like Figure 8 As shown, in the effective pixel area 111, the color filter CF is arranged on the inorganic insulating film 53, wherein no organic insulating film 55 is inserted between the color filter CF and the inorganic insulating film 53. Furthermore, as... Figure 9 As shown, in the region adjacent to the groove H in the effective pixel region 111 and in the invalid pixel region 114, the organic insulating film 57 is arranged on the inorganic insulating film 53, and no organic insulating film 55 is inserted between the organic insulating film 57 and the inorganic insulating film 53.

[0079] Even in this manner, the camera device 1 achieves effects similar to those described in the above embodiments. That is, even if a seam 611 (a small gap) appears in the inorganic insulating film 61, the open end of the seam 611 can be sealed by the inorganic insulating film 63 having a uniform film thickness, preventing moisture from entering the camera device 1 from the open end of the seam 611. As a result, since the moisture-proof performance of the camera device 1 can be improved, any reduction in the reliability of the camera device 1 can be suppressed.

[0080] (2) Second variation Figure 10 This is a cross-sectional view showing the configuration of the effective pixel region 111 of the pixel region 11B according to a second variation of an embodiment of the present disclosure. Figure 11 This is a cross-sectional view showing the configuration of the groove H and its periphery in the pixel region 11B according to a second variation of an embodiment of the present disclosure. Figure 10 and Figure 11 The pixel region 11B shown is Figure 3 and Figure 4 The example shown is a variation of pixel region 11. Figure 10 and Figure 11 As shown, no organic insulating film 57 is provided in pixel region 11B.

[0081] like Figure 10 As shown, in the effective pixel region 111, an inorganic insulating film 61 is arranged on the color filter CF, wherein no organic insulating film 57 is inserted between the inorganic insulating film 61 and the color filter CF. Furthermore, as... Figure 11 As shown, in the effective pixel region 111 adjacent to the groove H and in the ineffective pixel region 114, the inorganic insulating film 61 is arranged on the organic insulating film 55, wherein no organic insulating film 57 is inserted between the inorganic insulating film 61 and the organic insulating film 55. Even in this way, the imaging device 1 has an effect similar to that of the above embodiment.

[0082] (3) Third variation Figure 12 This is a cross-sectional view showing the configuration of the effective pixel region 111 of the pixel region 11C according to a third variation of the present disclosure. Figure 13 This is a cross-sectional view showing the configuration of the groove H and its surrounding portion of the pixel region 11C according to a third variation of an embodiment of the present disclosure. Figure 12 and Figure 13 The pixel region 11C shown is Figure 3 and Figure 4 The example shown is a variation of pixel region 11. Figure 12 and Figure 13 As shown, neither organic insulating films 55 nor 57 are disposed in pixel region 11C.

[0083] like Figure 12 As shown, in the effective pixel area 111, the color filter CF is sandwiched between inorganic insulating films 53 and 61 in the vertical direction, wherein no organic insulating films 55 and 57 are inserted between the color filter CF and the inorganic insulating films 53 and 61. Furthermore, as... Figure 13 As shown, in the region adjacent to the groove H in the effective pixel region 111 and in the ineffective pixel region 114, the inorganic insulating film 61 is arranged on the inorganic insulating film 53, wherein no organic insulating films 55 and 57 are inserted between the inorganic insulating film 61 and the inorganic insulating film 53. Even in this way, the imaging device 1 has an effect similar to that of the above embodiment.

[0084] <Examples of applications of moving objects> The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can also be implemented as a device installed on various mobile bodies such as automobiles, electric vehicles, hybrid vehicles, autonomous two-wheelers, bicycles, personal motor vehicles, airplanes, unmanned aerial vehicles, ships, and robots.

[0085] Figure 14 This is a block diagram illustrating an example of a schematic configuration of a vehicle control system, which serves as an example of a mobile body control system to which the technology of this disclosure may be applied.

[0086] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 14In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and a comprehensive control unit 12050. Furthermore, as functional components of the comprehensive control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0087] The drive system control unit 12010 controls the operation of equipment related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 functions as a control device for various devices such as: drive force generating devices for generating vehicle driving force, such as internal combustion engines and drive motors; drive force transmission mechanisms for transmitting driving force to the wheels; steering mechanisms for adjusting the vehicle's steering angle; and braking devices for generating vehicle braking force.

[0088] The vehicle body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the vehicle body system control unit 12020 functions as a control device for various devices such as: keyless entry system; smart key system; power windows; or various lights such as headlights, reversing lights, brake lights, turn signals, fog lights, etc. In this case, radio waves or signals from a portable device that replaces the key can be input to the vehicle body system control unit 12020. The vehicle body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locks, power windows, lights, etc.

[0089] The exterior information detection unit 12030 detects information related to the exterior of the vehicle, including the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to a camera unit 12031. The exterior information detection unit 12030 causes the camera unit 12031 to capture images of the exterior of the vehicle and receives the captured images. Based on the received images, the exterior information detection unit 12030 can perform processing such as detecting objects like people, vehicles, obstacles, signs, and text on the road surface, or processing such as detecting the distance to the object.

[0090] The camera unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The camera unit 12031 can output the electrical signal as an image, or it can output the electrical signal as information related to the measured distance. In addition, the light received by the camera unit 12031 can be visible light, or it can be non-visible light such as infrared light.

[0091] The in-vehicle information detection unit 12040 detects information related to the interior of the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver state detection unit 12041 that detects the driver's state. For example, the driver state detection unit 12041 includes a camera that captures images of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's level of fatigue or concentration, or determine whether the driver is dozing off.

[0092] Based on information related to the exterior or interior of the vehicle acquired by the exterior information detection unit 12030 or the interior information detection unit 12040, the microcomputer 12051 can calculate the control target values ​​for the drive force generating device, steering mechanism, or braking device, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control aimed at realizing the functions of ADAS (Advanced Driver Assistance System), including collision avoidance or impact mitigation, distance-based following, constant speed driving, collision warning, lane departure warning, etc.

[0093] Furthermore, based on information related to the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform coordinated control, such as autonomous driving, which enables the vehicle to drive autonomously without the need for driver operation, by controlling the drive force generating device, steering mechanism, braking device, etc.

[0094] Furthermore, based on information about the vehicle's exterior obtained by the exterior information detection unit 12030, the microcomputer 12051 can output control commands to the body system control unit 12020. For example, based on the position of the vehicle in front or oncoming vehicle detected by the exterior information detection unit 12030, the microcomputer 12051 can perform coordinated control, such as switching the headlights from high beam to low beam to prevent glare.

[0095] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying vehicle occupants or external to the vehicle. Figure 14 In the example shown, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are shown as output devices. For example, the display unit 12062 may include at least one of an onboard display and a head-up display.

[0096] Figure 15This is a diagram showing an example of the mounting position of the camera unit 12031.

[0097] exist Figure 15 In the vehicle 12100, camera units 12101, 12102, 12103, 12104 and 12105 are included, serving as camera unit 12031.

[0098] For example, cameras 12101, 12102, 12103, 12104, and 12105 are arranged at the front nose, side mirrors, rear bumper, and trunk lid of vehicle 12100, as well as at the upper part of the windshield inside the passenger compartment. Camera 12101 at the front nose and camera 12105 at the upper part of the windshield inside the passenger compartment primarily acquire images of the front of vehicle 12100. Cameras 12102 and 12103 at the side mirrors primarily acquire images of the sides of vehicle 12100. Camera 12104 at the rear bumper or trunk lid primarily acquires images of the rear of vehicle 12100. The images of the front area acquired by cameras 12101 and 12105 are mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0099] Notice, Figure 15 An example of the camera range of camera units 12101 to 12104 is shown. Camera range 12111 represents the camera range of camera unit 12101 located on the front nose. Camera ranges 12112 and 12113 represent the camera ranges of camera units 12102 and 12103 located on the side mirrors, respectively. Camera range 12114 represents the camera range of camera unit 12104 located on the rear bumper or trunk door. For example, by superimposing the image data captured by camera units 12101 to 12104, a top-view image of vehicle 12100 is obtained.

[0100] At least one of the camera units 12101 to 12104 may have the function of acquiring distance information. For example, at least one of the camera units 12101 to 12104 may be a stereo camera composed of multiple camera elements, or may be a camera element having pixels for phase difference detection.

[0101] For example, based on distance information obtained from cameras 12101 to 12104, microcomputer 12051 can determine the distance to each three-dimensional object within the camera range 12111 to 12114 and how that distance changes over time (relative speed to vehicle 12100), and thereby extract three-dimensional objects as the preceding vehicle: those that are closest to the preceding vehicle on the driving path of vehicle 12100, and those that are traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or more). Furthermore, microcomputer 12051 can set a pre-determined inter-vehicle distance with respect to the preceding vehicle and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. Therefore, coordinated control for purposes such as autonomous driving, enabling the vehicle to operate autonomously without driver intervention, can be performed.

[0102] For example, based on distance information obtained by cameras 12101 to 12104, microcomputer 12051 can classify three-dimensional object data into three-dimensional object data such as two-wheeled vehicles, ordinary cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, microcomputer 12051 distinguishes obstacles around vehicle 12100 into obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle. If the collision risk is equal to or greater than a set value and a collision may occur, microcomputer 12051 issues a warning to the driver via audio speaker 12061 or display unit 12062, and executes forced deceleration or evasive steering via drive system control unit 12010. Thus, microcomputer 12051 can assist driving to avoid collisions.

[0103] At least one of the camera units 12101 to 12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the images captured by the camera units 12101 to 12104. For example, this pedestrian identification is performed by: extracting feature points from the images captured by the camera units 12101 to 12104, which are infrared cameras; and performing pattern matching processing on a series of feature points representing the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the camera units 12101 to 12104 and thereby identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to overlay a square outline for emphasis on the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 to display an icon or the like representing a pedestrian at a desired location.

[0104] Examples of vehicle control systems to which the technology according to this disclosure can be applied have been described above. The technology according to this disclosure can be applied to the camera unit 12031, etc., in the above-described configuration. Specifically, having Figures 1 to 4 The imaging device 1 shown can be applied to the imaging unit 12031. By applying the technology according to this disclosure to the imaging unit 12031, the moisture resistance of the imaging device included in the imaging unit 12031 can be improved, and the reduction in reliability can be suppressed.

[0105] <Other Embodiments> As described above, this disclosure has been illustrated with reference to embodiments, variations, and application examples, but it should not be construed as limiting this disclosure by the descriptions and drawings that form part of it. Various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art based on this disclosure. For example, the "light detection device" and "semiconductor device" of this disclosure are not limited to applications in imaging devices such as back-illuminated CMOS image sensors. The "light detection device" of this disclosure can be applied to ranging devices such as ToF. Furthermore, for example, the "semiconductor device" of this disclosure can be applied to various semiconductor devices, such as integrated circuits (ICs) such as central processing units (CPUs) and digital signal processors (DSPs), analog ICs, digital-to-analog (D / A) converters, analog-to-digital (A / D) converters, and memory ICs such as dynamic random access memory (DRAM) and NAND.

[0106] As stated above, it goes without saying that this technology includes various embodiments not described herein. At least one of various omissions, substitutions, or changes can be made to components without departing from the spirit of the above embodiments. Furthermore, the effects described herein are merely illustrative and not restrictive, and other effects may also exist.

[0107] Note that this disclosure may also have the following components. (1) A light detection device, comprising: Semiconductor substrate; An organic insulating film, made of a light-transmitting organic material, is disposed on the first side of the semiconductor substrate; A groove is provided in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film, made of a light-transmitting inorganic material, is disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; and The second inorganic insulating film, made of a light-transmitting inorganic material, is disposed on the first inorganic insulating film, wherein... The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first surface side, and The surface of the first inorganic insulating film is flat at least above the groove. (2) According to the light detection device described in (1) above, the first region is surrounded by the groove. (3) According to the optical detection device described in (2) above, wherein, The first region is an effective pixel region, which includes pixels disposed on the semiconductor substrate and is configured to output signals generated by photoelectric conversion in the pixels. The second region is an invalid pixel region that does not output signals generated through photoelectric conversion. (4) According to any one of (1) to (3) above, the light detection device, wherein, The side surface of the groove includes: A first side surface, which is disposed on the semiconductor substrate; and The second side is disposed on the organic insulating film, and The second side is retracted relative to the first side in a direction that widens the width of the groove. (5) The light detection device according to any one of (1) to (4) further includes: an insulating film made of a light-transmitting material and disposed between the first surface of the semiconductor substrate and the organic insulating film. (6) According to the optical detection device described in (5) above, wherein, The groove is disposed in the organic insulating film, the insulating film, and the semiconductor substrate. The side surface of the groove includes: A first side surface is disposed on the semiconductor substrate; The second side, which is disposed on the organic insulating film; and The third side is disposed on the insulating film, and The second side is retracted relative to the third side in a direction that widens the width of the groove. (7) According to any one of (1) to (6) above, the light detection device, wherein, The organic insulating film comprises: First organic insulating film; and A second organic insulating film is disposed on the first organic insulating film. (8) The optical detection device according to (7) above further includes: A color filter is disposed on the first surface side of the semiconductor substrate, wherein... The color filter is located between the first organic insulating film and the second organic insulating film. (9) The light detection device according to any one of (1) to (8) above further includes a lens body disposed on the first inorganic insulating film. (10) A semiconductor device, comprising: Semiconductor substrate; An organic insulating film, made of organic material, is disposed on the first side of the semiconductor substrate; A groove is provided in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film, made of inorganic material, is disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; and A second inorganic insulating film, made of inorganic material, is disposed on the first inorganic insulating film, wherein... The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first surface side, and The surface of the first inorganic insulating film is flat at least above the groove. (11) A method for manufacturing an optical detection device, the method comprising the following steps: An organic insulating film made of a light-transmitting organic material is formed on the first side of a semiconductor substrate; The organic insulating film and the semiconductor substrate are etched to form a groove in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film made of a light-transmitting inorganic material is formed on the first side of the semiconductor substrate to cover the organic insulating film and fill the groove; A planarization film is formed on the first inorganic insulating film to planarize the surface of the first side of the semiconductor substrate; The planarization film and the first inorganic insulating film are etched back to planarize the surface of the first inorganic insulating film at least above the groove; and A second inorganic insulating film made of a light-transmitting inorganic material is formed on the planarized surface of the first inorganic insulating film. List of reference numerals

[0108] 1: Camera device 10: Semiconductor substrate 10a: Front surface 10b: Back 11: Pixel area 11A: Effective pixel area 11B: Invalid pixel area 12: pixels 13: Vertical drive circuit 14: Column signal processing circuit 15: Horizontal drive circuit 16: Output Circuit 17: Control Circuit 22: Horizontal signal line 23: Vertical signal line 24: Data output signal line 30: Readout Circuit 31: Photodiode (PD) 32: Transmission transistor 33: Floating Diffusion Section 34: Amplifying transistor 35: Selecting a transistor 36: Reset transistor 41: Component Separation Section 43: Partition wall 51: Anti-reflective film 53, 61, 63: Inorganic insulating film 55, 57, 73: Organic insulating film 71: Resist Pattern 75: Photoresist 90: On-chip lens 111: Effective pixel area 112: Invalid pixel area 113: Boundary Area 611: Seam 611E: Open end 612: concave part 631: Seam 12000: Vehicle Control System 12001: Communication Network 12010: Drive system control unit 12020: Body System Control Unit 12030: External Information Detection Unit 12031: Camera Department 12040: In-vehicle information detection unit 12041: Driver Status Monitoring Department 12050: Integrated Control Unit 12051: Microcomputer 12052: Audio / Image Output Unit 12061: Audio Speaker 12062: Display Unit 12063: Instrument panel 12100: Vehicles 12101, 12102, 12103, 12104, 12105: Camera Department 12111, 12112, 12113, 12114: Camera range CF: Color Filter H: Groove HB: Bottom HSb, HSm, HSt: Side view I: In-vehicle network OCL: On-Chip Lens.

Claims

1. A light detection device, comprising: Semiconductor substrate; An organic insulating film, made of a light-transmitting organic material, is disposed on the first side of the semiconductor substrate; A groove is provided in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film, made of a light-transmitting inorganic material, is disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; as well as The second inorganic insulating film, made of a light-transmitting inorganic material, is disposed on the first inorganic insulating film, wherein... The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first surface side, and The surface of the first inorganic insulating film is flat at least above the groove.

2. The optical detection device according to claim 1, wherein, The first region is surrounded by the groove.

3. The optical detection device according to claim 2, wherein, The first region is an effective pixel region, which includes pixels disposed on the semiconductor substrate and outputs signals generated by photoelectric conversion in the pixels. The second region is an invalid pixel region that does not output signals generated through photoelectric conversion.

4. The optical detection device according to claim 1, wherein, The side surface of the groove includes: A first side surface, which is disposed on the semiconductor substrate; and The second side is disposed on the organic insulating film, and The second side is retracted relative to the first side in a direction that widens the width of the groove.

5. The optical detection device according to claim 1, comprising: An insulating film made of a light-transmitting material and disposed between the first surface of the semiconductor substrate and the organic insulating film.

6. The optical detection device according to claim 5, wherein, The groove is disposed in the organic insulating film, the insulating film, and the semiconductor substrate. The side surface of the groove includes: A first side surface is disposed on the semiconductor substrate; The second side, which is disposed on the organic insulating film; and The third side is disposed on the insulating film, and The second side is retracted relative to the third side in a direction that widens the width of the groove.

7. The optical detection device according to claim 1, wherein, The organic insulating film comprises: First organic insulating film; and A second organic insulating film is disposed on the first organic insulating film.

8. The optical detection device according to claim 7, further comprising: A color filter is disposed on the first surface side of the semiconductor substrate, wherein... The color filter is located between the first organic insulating film and the second organic insulating film.

9. The optical detection device according to claim 1 further includes a lens body disposed on the first inorganic insulating film.

10. A semiconductor device, comprising: Semiconductor substrate; An organic insulating film, made of organic material, is disposed on the first side of the semiconductor substrate; A groove is provided in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film, made of inorganic material, is disposed on the first side of the semiconductor substrate, covering the organic insulating film and filling the groove; as well as A second inorganic insulating film, made of inorganic material, is disposed on the first inorganic insulating film, wherein... The semiconductor substrate has a first region on one side separated by the groove and a second region on the other side separated by the groove on the first surface side, and The surface of the first inorganic insulating film is flat at least above the groove.

11. A method for manufacturing a light detection device, the method comprising the following steps: An organic insulating film made of a light-transmitting organic material is formed on the first side of a semiconductor substrate; The organic insulating film and the semiconductor substrate are etched to form a groove in the organic insulating film and the semiconductor substrate, with the semiconductor substrate serving as the bottom surface; A first inorganic insulating film made of a light-transmitting inorganic material is formed on the first side of the semiconductor substrate to cover the organic insulating film and fill the groove; A planarization film is formed on the first inorganic insulating film to planarize the surface of the first side of the semiconductor substrate; The planarization film and the first inorganic insulating film are etched back to planarize the surface of the first inorganic insulating film at least above the groove; as well as A second inorganic insulating film made of a light-transmitting inorganic material is formed on the planarized surface of the first inorganic insulating film.

Images