Sample concentration device

Abstract

The application relates to a sample concentration device, comprising a sample containing component and a temperature control module, the sample containing component comprising a sample containing groove, the sidewall of the sample containing groove comprising a sample concentration area, the sample concentration area extending along the depth direction of the sample containing groove; the temperature control module is configured to control the temperature of the sample concentration area, so that a temperature interval is formed in the sample concentration area, the temperature in the temperature interval continuously decreases from top to bottom along the depth direction, and the temperature interval comprises a dew point temperature at the position of the sample containing groove, and the position corresponding to the dew point temperature in the sample concentration area is a target liquid level. According to the sample concentration device, the liquid level concentration of the sample is accurately controlled to the target liquid level by the dew point temperature, and the sample is kept at the target liquid level, so that the concentration precision is improved.

Description

Technical Field

[0001] This application relates to the field of concentration technology, and more particularly to sample concentration apparatus. Background Technology

[0002] Sample concentration is used to increase the concentration of solutes, for example, by removing part of the solvent from the sample. Solvent evaporation is a common concentration method, which can be achieved using concentrators such as fully automated water bath nitrogen blowing concentrators and rotary evaporators. However, in the prior art, these concentrators are only suitable for concentrating large quantities of samples, and their concentration accuracy is not high, especially for small quantities of samples.

[0003] To address the issue that the aforementioned concentrators are only suitable for large-dose samples, existing technologies include chip-type concentrators for concentrating small-dose samples (see CN1696639A and CN107189929A). However, these chip-type concentrators are complex in structure and can only concentrate specific samples.

[0004] To address the issue of low concentration accuracy in concentrators, existing technologies employ methods to improve concentration accuracy by detecting sample liquid levels. For example, a level gauge is installed on the concentration device. During the concentration process, the level gauge detects the sample liquid level in real time and transmits the detected information to the control system. The control system then determines whether the sample liquid level is at the target level. When the sample liquid level is at the target level, the control system stops the heating element. However, this approach complicates the control process of the concentration device. Furthermore, even after the heating element stops heating, the sample temperature remains high, causing the sample to continue evaporating and resulting in the sample liquid level falling below the target level. This is particularly problematic for small-dose samples, severely impacting concentration accuracy. Summary of the Invention

[0005] This application provides a sample concentration device to solve the problem of low concentration accuracy.

[0006] Specifically, the sample concentration device of this application includes:

[0007] A sample receiving component, the sample receiving component including a sample receiving groove, the sidewall of the sample receiving groove including a sample concentration region extending along the depth direction of the sample receiving groove; and

[0008] A temperature control module is configured to control the temperature of the sample concentration area to form a temperature range within the sample concentration area. The temperature within the temperature range decreases continuously from top to bottom along the depth direction, and the temperature range includes the dew point temperature at the location of the sample container. The position in the sample concentration area corresponding to the temperature and the dew point temperature is the target liquid level.

[0009] When using the sample concentration device of this application to concentrate a sample, the volume of the concentrated sample can be determined based on the sample volume and the concentration factor. Based on the volume of the concentrated sample, the target liquid level can be determined in the sample holding tank. By adjusting the temperature above the target liquid level to be higher than the dew point temperature and adjusting the temperature at the target liquid level to the dew point temperature through the temperature control module, the evaporation and condensation can be kept in balance when the liquid level of the sample drops to the target liquid level, thereby keeping the liquid level of the sample at the target liquid level and thus improving the accuracy of sample concentration. Attached Figure Description

[0010] To make the content of this application easier to understand, the embodiments of this application will be described in further detail below with reference to the accompanying drawings. Wherein:

[0011] Figure 1 A schematic diagram illustrating the working principle of this application is shown.

[0012] Figure 2 A schematic diagram of a sample receiving component according to a first embodiment of this application is shown.

[0013] Figure 3 A schematic diagram of a sample receiving component according to a second embodiment of this application is shown.

[0014] Figure 4 A schematic diagram of a sample receiving component according to a third embodiment of this application is shown.

[0015] Figure 5 A schematic diagram of a sample receiving component according to a fourth embodiment of this application is shown.

[0016] Figure 6 A schematic diagram of a sample receiving component according to a fifth embodiment of this application is shown.

[0017] Figure 7 A schematic diagram of a sample concentration apparatus according to a first embodiment of this application is shown.

[0018] Figure 8 A schematic diagram of a sample concentration apparatus according to a first embodiment of this application is shown.

[0019] Figure 9 A schematic diagram of a sample concentration apparatus according to a fifth embodiment of this application is shown.

[0020] Figure 10 A temperature simulation diagram of a sample concentration apparatus according to the first embodiment of this application is shown.

[0021] Figure 11 A temperature simulation diagram of a sample concentration apparatus according to the fifth embodiment of this application is shown.

[0022] Figure 12 A schematic diagram of a sample concentration apparatus according to an embodiment of this application is shown, wherein the covering component is a lid.

[0023] Figure 13 A schematic diagram of a sample concentration apparatus according to an embodiment of this application is shown, wherein the covering component is a chamber.

[0024] Figure 14 A schematic diagram of a sample concentration apparatus according to an embodiment of this application is shown, wherein the covering component is a lid, and a humidity control module is provided on the lid.

[0025] Figure 15 A schematic diagram of a sample concentration apparatus according to an embodiment of this application is shown, wherein the sample concentration apparatus includes a photodetector component.

[0026] Figure 16 A schematic diagram of a sample concentration apparatus according to an embodiment of this application is shown, wherein the sample concentration apparatus includes a photodetector component.

[0027] Figure 17 A flowchart of the sample concentration method of this application is shown.

[0028] Figure 18 A schematic diagram of a method for manufacturing a sample concentration apparatus according to an embodiment of this application is shown.

[0029] Figure 19 A schematic diagram of a method for manufacturing a sample concentration apparatus according to another embodiment of this application is shown.

[0030] Figure label:

[0031] 100. Sample containing components;

[0032] 110. Sample receiving slot; 111. Opening; 113. Side; 115. Bottom;

[0033] 130. Sidewall; 131. Sample concentration region; 1311. First position; 1313. Second position; 133. First variable temperature region; 135. Middle region; 137. Second variable temperature region;

[0034] 150. Bottom wall;

[0035] 200. Temperature control module;

[0036] 210. Heating components;

[0037] 230. Refrigeration components;

[0038] 300. Covering components;

[0039] 310. Lid;

[0040] 330. Warehouse body;

[0041] 400. Humidity control module;

[0042] 410. Humidification unit;

[0043] 430. Drying unit;

[0044] 500. Optical detection component;

[0045] 510. Light source;

[0046] 520. Detector;

[0047] 540. Light-blocking layer. Detailed Implementation

[0048] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely for explaining the present invention and not for limiting the present invention. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present invention are shown in the accompanying drawings, and not all of them.

[0049] This application defines certain directional terms. Unless otherwise stated, the directional terms used, such as "up," "down," "left," "right," "inner," and "outer," are used for ease of understanding and therefore do not constitute a limitation on the scope of protection of this application.

[0050] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0051] In the description of this application, unless otherwise expressly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0052] definition

[0053] Dew point temperature: The temperature at which air reaches saturation when cooled, under constant water vapor content and pressure; that is, the temperature at which water vapor in the air condenses into dew. When the air is saturated with water vapor, the air temperature and dew point temperature are the same; when the air is not saturated, the air temperature is higher than the dew point temperature; when the air is supersaturated with water vapor, the air temperature is lower than the dew point temperature. The difference between the air temperature and the dew point temperature indicates how far the air is from saturation. The dew point temperature can be calculated using conventional formulas found in existing technology, which will not be detailed here. The dew point temperature can be measured using a dew point meter.

[0054] Working principle

[0055] According to the definition of dew point temperature, when the temperature of the sample is higher than the dew point temperature, the evaporation rate of the sample is greater than the condensation rate, so the liquid level of the sample will gradually decrease; when the temperature of the sample is equal to the dew point temperature, the evaporation rate and condensation rate of the sample reach equilibrium, so the liquid level of the sample remains basically unchanged.

[0056] like Figure 1 As shown, when it is necessary to concentrate a sample from the initial liquid level to the target liquid level below the initial liquid level, the temperature of the sample above the target liquid level can be made higher than the dew point temperature, the temperature at the target liquid level can be equal to the dew point temperature, and the temperature below the target liquid level can be lower than the dew point temperature. Thus, the sample can be lowered from the initial liquid level to the target liquid level. When the sample is lowered to the target liquid level, since the temperature of the upper surface of the sample is equal to the dew point temperature, the evaporation rate and condensation rate of the sample reach equilibrium, and the upper surface of the sample remains at the target liquid level.

[0057] Specifically, the volume of the concentrated sample can be calculated based on its volume before concentration and the required concentration factor. Based on the concentrated volume and the geometry of the sample container, the position of the upper surface of the concentrated sample within the container can be calculated, thus determining the target liquid level. By adjusting the temperature of the sample container's sidewalls to ensure that the temperature above the target liquid level is higher than the dew point temperature, the temperature at the target liquid level is equal to the dew point temperature, and the temperature below the target liquid level is lower than the dew point temperature, the upper surface of the sample can ultimately be maintained at the target liquid level.

[0058] Sample Concentration Device

[0059] The sample concentration device of this application is suitable for concentrating small doses of samples, but does not exclude the concentration of medium and large doses of samples.

[0060] As an example, a sample can be a biological sample dissolved in a solvent. Additionally, a sample can also be a biological sample existing in sample form, such as saliva, blood, tissue fluid, bacterial culture medium, protein or nucleic acid extracts, etc.

[0061] It should be noted that the term "small dose" refers to a sample volume between 1 μL and 3200 μL, for example, sample volumes of 1, 2, 3, 4, 5, 10, 15, 20, 30, 40, 50, 100, 150, 200, 300, 400, 500, 1000, 1200, 1500, 2000, 2500, 3000, and 3200 μL. The terms "medium and large doses" refer to sample volumes greater than 3200 μL, for example, sample volumes of 4000, 5000, 6000, 7000, 8000, 9000, 10000, and 100000 μL.

[0062] For small-dose samples, due to their small overall volume, evaporation has a significant impact on volume. When concentrating them using conventional heating methods in existing technologies, it is difficult to control the sample volume, thus making it difficult to control the concentration accuracy. Furthermore, even for medium and large-dose samples, the problem of difficulty in controlling the concentration accuracy remains.

[0063] The sample concentration apparatus of this application improves concentration accuracy by creating a temperature gradient, including the dew point temperature, inside the sample to precisely control the concentration process.

[0064] like Figure 2As shown, the sample concentration device includes a sample receiving component 100. In this application, the detailed structure of the sample receiving component 100 is described using an example of the sample receiving component 100 being placed flat on a horizontal support surface such as a table. It will be understood that when the placement orientation of the sample receiving component 100 changes, such as when it is tilted or inverted, the positional relationships between the various structures described below will change accordingly.

[0065] like Figure 2 As shown, the sample receiving component 100 includes a sample receiving groove 110 for receiving a sample that needs to be concentrated. Specifically, the sample receiving groove 110 has an opening 111 at the top, and the sides 113 and bottom 115 of the sample receiving groove 110 are closed. The sample can be added into the sample receiving groove 110 through the opening 111 and is confined by the sides 113 and bottom 115, thereby being received within the sample receiving groove 110.

[0066] As an example, a pipette (not shown) can be used to add a sample to the sample receiving slot 110, or a pipette can be used to remove a sample from the sample receiving slot 110.

[0067] like Figure 2 As shown, in the longitudinal section of the sample receiving groove 110, the side surface 113 may include one or more straight lines, one or more curved lines, or a combination of one or more straight lines and one or more curved lines; similarly, the bottom surface 115 may include one or more straight lines, one or more curved lines, or a combination of straight lines and curves. Curves include circular arcs, conic sections, spline curves, polynomial curves, etc.

[0068] Specifically, the side 113 may include a straight line, which may be set vertically or at an angle.

[0069] As an example, the sample receiving groove 110 can be prism-shaped, pyramid-shaped, or other geometric shapes. Specifically, the sample receiving groove 110 can be triangular prism, quadrangular prism, inverted cone, truncated cone, etc.

[0070] exist Figure 2 In this design, the sample receiving groove 110 is shaped like an inverted truncated cone. Along the depth direction of the sample receiving groove 110, its width decreases uniformly from top to bottom, facilitating the calculation of its volume. This, in turn, makes it easier to calculate the height of the sample's upper surface when a sample of known volume is contained within the sample receiving groove 110. Furthermore, the inverted truncated cylindrical shape of the sample receiving groove 110 results in a larger surface area on the sample's upper surface compared to other locations, which is beneficial for the sample to evaporate from its upper surface into the air.

[0071] Understandably, the number of sample receiving slots 110 can be one or more.

[0072] When there are multiple sample receiving slots 110, the multiple sample receiving slots 110 can be arranged regularly or irregularly. When the multiple sample receiving slots 110 are arranged regularly, the multiple sample receiving slots 110 can be arranged in a linear array or a circular array, etc.

[0073] Furthermore, when there are multiple sample receiving slots 110, the multiple sample receiving slots 110 may have the same or different shapes.

[0074] In one specific implementation, such as Figure 3 As shown, the sample receiving component 100 may include three sample receiving slots 110 arranged side by side, and the three sample receiving slots 110 have the same shape.

[0075] like Figure 2 As shown, the sample receiving component 100 (or sample receiving groove 110) includes a bottom wall 150 constituting the bottom surface 115 and a side wall 130 constituting the side surface 113.

[0076] like Figure 2 As shown, the sidewall 130 includes a sample concentration region 131, which, when a sample is contained in the sample receiving groove 110, extends along the depth direction of the sample receiving groove 110 (i.e., Figure 2 (Up and down direction), the sample can come into contact with the sample concentration area 131, and then these samples will gradually evaporate, causing the upper surface of the sample to gradually descend.

[0077] In one possible implementation, such as Figure 2 As shown, the entire sidewall 130 is made of thermally conductive material, therefore the temperature of the entire sidewall 130 can be adjusted to facilitate sample evaporation. In other words, in Figure 2 In this context, the entire sidewall 130 can be considered as the sample concentration region 131. It should be noted that, for... Figure 2 The sample containing component 100 has both the initial liquid level and the target liquid level located in the sample concentration region 131.

[0078] In another possible implementation, such as Figure 4 As shown, the upper part of the sidewall 130 is made of heat-insulating material, and the lower part of the sidewall 130 is made of heat-conducting material. Therefore, the temperature of the lower part of the sidewall 130 can be adjusted to facilitate sample evaporation. That is to say, in Figure 3 In the middle, the lower part of the sidewall 130 can be regarded as the sample concentration region 131. It should be noted that, for Figure 4 The sample containing component 100 typically has its initial and target liquid levels located in the lower part of the sidewall 130, i.e., in the sample concentration region 131.

[0079] In yet another possible implementation, such as Figure 5 As shown, the upper part of the sidewall 130 is made of thermally conductive material, and the lower part of the sidewall 130 is made of thermally insulating material. Therefore, the temperature of the upper part of the sidewall 130 can be adjusted to facilitate sample evaporation. That is, in Figure 4 In the middle, the upper part of the sidewall 130 can be regarded as the sample concentration region 131. It should be noted that, for Figure 5 The sample containing component 100 typically has its initial and target liquid levels located on the upper part of the sidewall 130, i.e., in the sample concentration region 131.

[0080] In yet another possible implementation, such as Figure 6 As shown, the upper and lower parts of the sidewall 130 are made of thermally conductive material, while the middle part is made of thermally insulating material. Therefore, the temperature of the upper and lower parts of the sidewall 130 can be adjusted, but the temperature of the middle part is difficult to adjust accurately. In this case, the entire sidewall 130 can be considered as the sample concentration region 131. However, it should be noted that the initial liquid level of the sample is usually located in the upper part of the sidewall 130, and the target liquid level is usually located in the middle part of the sidewall 130. For example, during concentration, the temperature of the upper part of the sidewall 130 can be made higher than the dew point temperature, and the temperature of the lower part of the sidewall 130 can be made lower than the dew point temperature. The sample surface located in the upper part of the sidewall 130 will gradually move downwards until it reaches a certain position in the middle of the sidewall 130, where the temperature of the sample surface equals the dew point temperature.

[0081] It should be noted that the term "thermal conductive material" refers to a material with a thermal conductivity greater than 50 W / (m K), such as silicon, ceramics, various metals, silicon carbide, aluminum nitride, etc. Conversely, thermal insulation materials can be porous silicon, silicon nitride, polyimide, etc.

[0082] It should be noted that the bottom wall 150 can be made of thermally conductive material or thermally insulating material. Furthermore, the bottom wall 150 and the side walls 130 can be made of the same material or different materials.

[0083] When there are multiple sample receiving slots 110, the sidewalls 130 of different sample receiving slots 110 can use the same or different thermally conductive materials; similarly, the bottom walls 150 of different sample receiving slots 110 can use the same or different thermally conductive materials.

[0084] Furthermore, when there are multiple sample receiving slots 110, the sidewalls 130 of different sample receiving slots 110 can have the same or different structures. For example, the sidewalls 130 of some sample receiving slots 110 adopt a structure such as... Figure 2 The structure shown has other sample receiving slots 110 with sidewalls 130 made of, for example, Figure 5 The structure shown.

[0085] like Figure 7 As shown, to regulate the temperature of the sample concentration zone 131, the sample concentration apparatus further includes a temperature control module 200. The temperature control module 200 is configured to control the temperature of the sample concentration zone 131, creating a temperature range within the zone. The temperature within this range decreases continuously from top to bottom along the depth direction of the sample container 110, and the temperature range includes the dew point temperature at the location of the sample container 110. Thus, the temperature near the top of the temperature range is higher than the dew point temperature, and the temperature of the samples corresponding to these locations is also higher than the dew point temperature. Therefore, the samples at these locations can evaporate into the air until the sample level drops to the target level, where the sample temperature equals the dew point temperature. Evaporation and condensation of the sample remain in equilibrium, thus maintaining the sample level at the target level.

[0086] The term "location of sample container 110" can refer to the space inside sample container 110. Furthermore, when the environment above sample container 100 is relatively stable (e.g., air pressure and airflow velocity remain essentially constant), the term "location of sample container 110" can also refer to the space connected to the interior of sample container 110 and located above sample container 110. Additionally, when the environment around sample container 110 (e.g., to the side, below, etc.) is relatively stable, the term "location of sample container 110" can also refer to the space connected to both the interior and top of sample container 110 and located around sample container 110.

[0087] As an example, the term "location of sample container 110" could refer to the evaporation chamber, which will be described later.

[0088] It should be noted that the dew point temperature can be lower than the ambient temperature at the location of the sample container 110, so that the overall temperature of the sample is relatively low, avoiding the sample from evaporating too quickly and thus reducing the concentration accuracy.

[0089] In one example, the ambient temperature at the location of the sample container 110 can be 26°C, the relative humidity can be 70%, and the dew point temperature is approximately 20°C.

[0090] In another example, the ambient temperature at the location of the sample container 110 can be 24°C, the relative humidity can be 75%, and the dew point temperature can be approximately 19°C.

[0091] like Figure 7As shown, the temperature control module 200 includes a heating element 210 and a cooling element 230. The heating element 210 heats a first position 1311 in the sample concentration region 131 so that the temperature of the first position 1311 is greater than the dew point temperature. The cooling element 230 heats a second position 1313 in the sample concentration region 131, located below the first position 1311 along the depth direction of the sample receiving tank 110, so that the temperature of the second position 1313 is less than the dew point temperature. Thus, a continuously varying temperature range is formed in the sample concentration region 131, with the temperature decreasing continuously from the first position 1311 to the second position 1313. Therefore, there must exist a position between the first position 1311 and the second position 1313 where the temperature equals the dew point temperature. The position where the temperature equals the dew point temperature is the target liquid level. Once the structure and material of the sidewall 130 are determined, the thermal conductivity of each position of the sidewall 130 is known. The sidewall 130 can be simulated or calculated to determine the temperature distribution of the sidewall 130 when the temperature of the first position 1311 and the second position 1313 changes, thereby determining the target liquid level.

[0092] In one possible implementation, the heating end of the heating element 210 can heat the first position 1311 via heat conduction. For example, the heating end of the heating element 210 is directly connected to the first position 1311 (see...). Figure 7 This heats the first position 1311. Alternatively, the heating end of the heating element 210 can be indirectly connected to the first position 1311 (see [link]). Figure 8 For example, a heat-conducting component made of a heat-conducting material is provided between the heating end of the heating component 210 and the first position 1311, thereby heating the first position 1311.

[0093] In another possible implementation, the heating end of the heating component 210 can also heat the first position 1311 by thermal radiation. For example, the heating end of the heating component 210 is close to but does not contact the first position 1311, and the heating component 210 radiates heat outward to heat the first position 1311.

[0094] As an example, the heating element 210 may be a heating electrode or a semiconductor cooling chip.

[0095] In one possible implementation, the cooling end of the cooling component 230 can cool the second position 1313 via heat conduction. For example, the cooling end of the cooling component 230 is directly connected to the second position 1313 (see...). Figure 7 This allows for cooling of the second position 1313. Alternatively, the cooling end of the cooling component 230 may be indirectly connected to the second position 1313 (see [link]). Figure 8For example, a heat-conducting component made of a heat-conducting material is provided between the cooling end of the cooling component 230 and the second position 1313, thereby cooling the second position 1313.

[0096] In another possible implementation, the cooling end of the cooling component 230 can also cool the second position 1313 through thermal radiation. For example, the cooling end of the cooling component 230 is close to but does not contact the second position 1313, and the cooling component 230 absorbs heat from the outside to cool the second position 1313.

[0097] As an example, the refrigeration component 230 can be liquid nitrogen.

[0098] It should be noted that the term "first position 1311" refers to a specific location (or region) within the sample concentration region 131, but not the entire sample concentration region 131. In other words, not the entire sample concentration region 131 is directly or indirectly heated by the heating element 210; only the first position 1311 is directly or indirectly heated, while other locations within the sample concentration region 131 are indirectly heated through heat conduction with the first position 1311. The temperature of the first position 1311 can be T_hot.

[0099] Understandably, due to heat loss during heat conduction, the temperature at locations other than the first position 1311 in the sample concentration region 131 will be lower than that at the first position 1311, and generally, the further away from the first position 1311, the lower the temperature. Furthermore, when the material of the sample concentration region 131 is homogeneous, it can be assumed that the temperature within the temperature range gradually and uniformly decreases from top to bottom along the depth direction of the sample receiving tank 110.

[0100] It should be noted that the term "second position 1313" refers to a specific location (or region) within the sample concentration region 131, but not the entire sample concentration region 131. In other words, not the entire sample concentration region 131 is directly or indirectly cooled by the cooling component 230; only the second position 1313 is directly or indirectly cooled, while other locations within the sample concentration region 131 are indirectly cooled through heat conduction with the second position 1313. The temperature of the second position 1313 can be T_cold.

[0101] Understandably, due to heat loss during heat conduction, the temperature at locations other than the second position 1313 in the sample concentration region 131 will be higher than that at the second position 1313, and generally, the further away from the second position 1313, the higher the temperature. Furthermore, when the material of the sample concentration region 131 is homogeneous, it can be assumed that the temperature within the temperature range gradually and uniformly decreases from top to bottom along the depth direction of the sample receiving tank 110.

[0102] exist Figure 2 Since the entire sidewall 130 can be considered as the sample concentration region 131, it is only necessary to ensure that the first position 1311 is higher than the second position 1313. For example, the first position 1311 is the top of the sidewall 130, and the second position 1313 is the bottom of the sidewall 130. Another example is that the first position 1311 is the middle of the sidewall 130, and the second position 1313 is the bottom of the sidewall 130. Yet another example is that the first position 1311 is the top of the sidewall 130, and the second position 1313 is the middle of the sidewall 130.

[0103] exist Figure 4 Since the lower part of the sidewall 130 can be regarded as the sample concentration region 131, it is only necessary to ensure that the first position 1311 and the second position 1313 are both located within the sample concentration region 131 and the first position 1311 is higher than the second position 1313. For example, the first position 1311 is located at the upper end of the lower part of the sidewall 130, and the second position 1313 is located at the lower end of the lower part of the sidewall 130.

[0104] exist Figure 5 Since the upper part of the sidewall 130 can be regarded as the sample concentration region 131, it is only necessary to ensure that the first position 1311 and the second position 1313 are both located within the sample concentration region 131 and the first position 1311 is higher than the second position 1313. For example, the first position 1311 is located at the upper end of the upper part of the sidewall 130, and the second position 1313 is located at the lower end of the upper part of the sidewall 130.

[0105] exist Figure 6 In this way, since the middle part of the side wall 130 is made of heat insulation material, the first position 1311 is set on the upper part of the side wall 130 and the second position 1313 is set on the lower part of the side wall 130. In this way, the temperature at a certain position in the middle of the side wall 130 can be equal to the dew point temperature.

[0106] like Figure 7 As shown, the sidewall 130 includes a first variable temperature region 133 made of a thermally conductive material. The sample concentration region 131 is located within the first variable temperature region 133. When the heating element 210 heats the first position 1311 of the sample concentration region 131 and the cooling element 230 cools the second position 1313 of the sample concentration region 131, a temperature range in which the temperature continuously decreases from top to bottom is formed within the first variable temperature region 133. When the heating element 210 makes the temperature of the first position 1311 higher than the dew point temperature and the cooling element 230 makes the temperature of the second position 1313 lower than the dew point temperature, this temperature range may include the dew point temperature. Figure 4 and Figure 5 In this case, you can refer to Figure 7 Applicable, the sidewall 130 may also include a first variable temperature region 133.

[0107] like Figure 9 As shown, the sidewall 130 includes a first variable temperature region 133, a middle region 135, and a second variable temperature region 137, which are stacked sequentially from top to bottom along the depth direction of the sample receiving groove 110. The thermal conductivity of the middle region 135 is lower than that of the first variable temperature region 133 and the second variable temperature region 137. In particular, the thermal conductivity of the middle region 135 is at least one order of magnitude lower than that of the first variable temperature region 133 and the second variable temperature region 137, thereby enabling a significant temperature change to be formed between the upper and lower surfaces of the middle region 135.

[0108] In one specific embodiment, the material of the first variable temperature region 133 can be silicon, the material of the intermediate region 135 can be silicon oxide, and the material of the second variable temperature region 137 can be silicon. Since the thermal conductivity of silicon oxide is two orders of magnitude lower than that of silicon, the temperature changes drastically around the intermediate region 135. The temperature of the upper surface of the intermediate region 135 is slightly higher than the dew point temperature, the temperature of the lower surface of the intermediate region 135 is slightly lower than the dew point temperature, and the temperature at a certain position in the intermediate region 135 is equal to the dew point temperature.

[0109] Furthermore, the material of the first variable temperature region 133 can also be ceramic, various metals, silicon carbide, aluminum nitride, etc. Similarly, the material of the second variable temperature region 137 can also be ceramic, various metals, silicon carbide, aluminum nitride, etc. The materials of the first variable temperature region 133 and the second variable temperature region 137 can be the same or different.

[0110] In addition, the material of the middle region 135 can also be porous silicon, silicon nitride, polyimide, etc.

[0111] exist Figure 9 In this process, the thickness of the first variable temperature region 133 can be from 50 micrometers to 2000 micrometers. The thickness of the intermediate region 135 can be from 500 nanometers to 3000 nanometers, and the thickness of the second variable temperature region can be from 5 micrometers to 200 micrometers. Therefore, compared to the first variable temperature region 133 and the second variable temperature region 137, the intermediate region 135 has a very small thickness, so that the temperature at the location of the intermediate region 135 can be considered as the dew point temperature.

[0112] When the heating element 210 makes the temperature of the first variable temperature zone 133 greater than the dew point temperature, and the cooling element 230 makes the temperature of the second variable temperature zone 137 less than the dew point temperature, the temperature at a certain position in the intermediate zone 135 can be equal to the dew point temperature.

[0113] In order to allow the position in the sample concentration region 131 corresponding to the dew point temperature to be adjusted up and down so as to concentrate the sample by different factors, the heating element 210 and the cooling element 230 can have at least the following two types.

[0114] In the first type, the amount of heat released by the heating element 210 per unit time can be adjusted. Thus, by controlling the heating element 210, the temperature of the first position 1311 can be adjusted, thereby adjusting the upper limit of the temperature range. For example, when it is necessary to raise the upper limit of the temperature range, the heating element 210 can release more heat per unit time. Conversely, when it is necessary to lower the upper limit of the temperature range, the heating element 210 can release less heat per unit time.

[0115] Similarly, the amount of heat released by the cooling component 230 within a unit time can also be adjusted. Thus, by controlling the cooling component 230, the temperature of the second position 1313 can be adjusted, thereby adjusting the lower limit of the temperature range. For example, when it is necessary to raise the lower limit of the temperature range, the cooling component 230 can absorb less heat per unit time. Conversely, when it is necessary to lower the lower limit of the temperature range, the cooling component 230 can absorb more heat per unit time.

[0116] By adjusting the heating element 210 and / or the cooling element 230, the temperature range in the sample concentration region 131 can be changed, thereby adjusting the position in the sample concentration region 131 corresponding to the dew point temperature.

[0117] In the second type, the amount of heat released by the heating element 210 per unit time cannot be adjusted. In this case, a heating element 210 that can generate appropriate heat per unit time can be selected to adjust the upper limit of the temperature range. For example, if it is necessary to raise the upper limit of the temperature range, a heating element 210 that releases more heat per unit time can be selected. For example, if it is necessary to lower the upper limit of the temperature range, a heating element 210 that releases less heat per unit time can be selected.

[0118] Similarly, if the amount of heat released by the cooling component 230 per unit time cannot be adjusted, a cooling component 230 that can absorb a suitable amount of heat per unit time can be selected to adjust the lower limit of the temperature range. For example, if it is necessary to raise the lower limit of the temperature range, a cooling component 230 that absorbs less heat per unit time can be selected. Conversely, if it is necessary to lower the lower limit of the temperature range, a cooling component 230 that absorbs more heat per unit time can be selected.

[0119] By replacing the heating element 210 and / or the cooling element 230, the temperature range in the sample concentration region 131 can be changed, thereby adjusting the position in the sample concentration region 131 corresponding to the dew point temperature.

[0120] It should be noted that the heating element 210 of the first type can be used in combination with the cooling element 230 of the second type.

[0121] In summary, by adjusting the upper and lower limits of the temperature range, the temperature range can include the dew point temperature at the location of the sample container 110. The position in the sample concentration area 131 corresponding to the temperature and dew point temperature is the target liquid level (or target position), which is the final liquid level after the sample evaporates. When the liquid level of the sample is at the target liquid level, the liquid level of the sample remains at the target liquid level, thus completing the concentration process.

[0122] In one implementation, the sample container is prism-shaped or pyramidal, and the formula for calculating the target liquid level is as follows:

[0123] h=H*(Td-T_cold) / (T_hot-T_cold), where:

[0124] h represents the target liquid level;

[0125] H is the total height of the sample container;

[0126] Td is the dew point temperature, where... T is the temperature at the location of the sample container, and RH is the relative humidity at the location of the sample container.

[0127] T_cold is the temperature at the bottom of the sample container, and T_cold is less than Td;

[0128] T_hot is the temperature at the top of the sample container, and T_hot is greater than Td.

[0129] like Figure 10 As shown, for Figure 7 In one specific embodiment of the sample concentration apparatus shown, the total height H of the sample receiving tank 110 is 700 micrometers, the temperature T_hot at the first position 1311 is 85°C, the temperature T_cold at the second position 1313 is 15°C, the ambient temperature at the location of the sample receiving tank 110 is 26°C, the relative humidity is 70%, and the dew point temperature is approximately 20°C. Under these operating conditions, the target liquid level h can be calculated to be 50 micrometers according to the formula described above.

[0130] like Figure 11 As shown, for Figure 9 In one specific embodiment of the sample concentration apparatus shown, the total height H of the sample receiving tank 110 is 700 micrometers, the temperature T_hot at the first position 1311 is 80°C, the temperature T_cold at the second position 1313 is 10°C, the ambient temperature at the location of the sample receiving tank 110 is 24°C, the relative humidity is 75%, and the dew point temperature is approximately 19°C. Under these conditions, the target liquid level h can be calculated to be 90 micrometers according to the formula described above.

[0131] Optionally, to detect whether the liquid level of the concentrated sample is at the target level, the sample concentration apparatus may further include a liquid level sensor (not shown) for detecting the liquid level of the sample in the sample container 110. Those skilled in the art will understand that a liquid level sensor is not necessary in the sample concentration apparatus of this application, because in this application, temperature control does not rely on the liquid level measured by the liquid level sensor. Instead, this application ensures that the sample liquid level is at the target level by creating a temperature gradient in the sample. However, in some embodiments, the liquid level sensor may be activated to measure the liquid level of the sample after concentration, thereby verifying whether the liquid level of the concentrated sample is at the target level. In still other embodiments, the liquid level sensor may be activated continuously or at fixed time intervals throughout the concentration process. It is conceivable that by comparing the measured data of temperature settings and / or liquid level drop rates with empirical or theoretical data, early warnings can be provided when necessary (e.g., in cases of significant deviations from empirical data), thereby providing effective monitoring of the concentration process.

[0132] It should be noted that the liquid level sensor can be an optical, capacitive, or acoustic sensor.

[0133] Optionally, in order to facilitate the determination of the dew point temperature at the location of the sample container 110 and to make the dew point temperature relatively stable, the sample concentration device may also include a covering component 300. The covering component 300 is used to form a sealed evaporation chamber above the sample container 110 to prevent the evaporation chamber from being connected to the complex external environment, thereby ensuring that the dew point temperature in the evaporation chamber is relatively stable.

[0134] like Figure 12 As shown, in one possible embodiment, the covering member 300 includes a lid 310 adapted to close on top of the sample receiving member 100, thereby covering the sample receiving groove 110 and forming a sealed evaporation chamber above the sample receiving groove 110. The lid 310 and the top of the sample receiving groove 110 can be detachably disposed to allow for adding and removing samples from the sample receiving groove 110.

[0135] like Figure 13As shown, in another possible embodiment, the covering component 300 includes a compartment 330, which includes a sealable accommodating space. The sample receiving component 100 can be located within the accommodating space, so that the compartment 330 covers the sample receiving slot 110, thereby forming a sealed evaporation chamber above the sample receiving slot 110. The compartment 330 may include a box body and a lid, the lid being detachably mounted on the box body. When the lid is closed, the accommodating space is sealed; when the lid is open, the accommodating space is open. The sample receiving component 100 can be fixed to the box body or detachably mounted on the box body.

[0136] like Figure 14 As shown, based on the covering component 300, the sample concentration device may also include a humidity control module 400, which is connected to the evaporation chamber and is used to control the humidity in the evaporation chamber, thereby controlling the dew point temperature.

[0137] As an example, the humidity control module 400 can be mounted on the cover component 300, such as on the cover 310 or the chamber 330. However, the humidity control module 400 can also be installed independently, for example, by connecting only the output or input of the humidity control module 400 to the evaporation chamber.

[0138] like Figure 14 As shown, the humidity control module 400 may include a humidification unit 410 and / or a drying unit 430. The humidification unit 410 is used to increase the humidity in the evaporation chamber, and the drying unit 430 is used to decrease the humidity in the evaporation chamber. The dew point temperature in the evaporation chamber can be adjusted through the humidification unit 410 and / or the drying unit 430.

[0139] For example, before concentration begins, the dew point temperature in the evaporation chamber is adjusted to the target dew point temperature by means of the humidification unit 410 and / or the drying unit 430. As another example, during and after concentration, the dew point temperature in the evaporation chamber is kept constant by means of the humidification unit 410 and / or the drying unit 430.

[0140] As an example, the humidification unit 410 can introduce water vapor into the evaporation chamber.

[0141] As an example, the drying unit 430 can introduce a dry gas, such as nitrogen, helium, or neon, into the evaporation chamber. By introducing the dry gas into the evaporation chamber, water vapor in the evaporation chamber can be expelled.

[0142] like Figure 15As shown, optionally, the sample concentration apparatus may also include a light detection component 500, which is configured to detect emitted light (e.g., fluorescence or phosphorescence) or absorbed light (e.g., ultraviolet or visible light) in a sample located in the sample receiving slot 110.

[0143] like Figure 15 As shown, in one possible implementation, the optical detection assembly includes a light source 510, a detector 520, and a data analysis system (not shown). The light source 510 is configured to emit light that illuminates the sample. The light source may be a point source, preferably a quantum source. The detector 520 is configured to receive light signals emitted from or absorbed by the sample and to generate a detection signal in response to the received light signals. The detector 520 and the data analysis system can be connected in a wired or wireless manner, and the data analysis system is configured to receive the detection signals and generate detection results in response to the received detection signals.

[0144] like Figure 15 As shown, the light source 510 can be set in the bottom wall 150, and the light-emitting end of the light source 510 faces the sample receiving groove 110, so that the light emitted by the light source 510 can directly illuminate the sample located inside the sample receiving groove 110.

[0145] like Figure 15 As shown, the detector 520 can be positioned below the bottom wall 150. To allow light emitted from the sample to reach the detector 520, the portion of the bottom wall 150 corresponding to the bottom of the sample receiving groove 110 is transparent.

[0146] In one possible implementation, such as Figure 15 As shown, in the vertical direction, the light source 510 can be located between the bottom of the tank and the detector 520, and the light source 510 and the detector 520 do not interfere with each other (i.e., the light source 510 and the detector 520 are misaligned), so that the light emitted by the light source 510 can illuminate the sample, and the light signal emitted by the sample can illuminate the detector 520.

[0147] In one possible implementation, such as Figure 16 As shown, the optical detection assembly also includes a light-blocking layer 540, which is disposed on the side of the light source 510 away from the sample receiving slot 110, preventing light emitted from the light source 510 from propagating towards the side away from the sample receiving slot 110. The light-blocking layer can be stacked on top of the transparent bottom wall 150. Furthermore, another light-blocking layer 150 can be stacked below the transparent bottom wall 150. The detector 520 is disposed on the lower light-blocking layer 540, thus allowing the detector 520 to detect only the light signal emitted from the sample in one of the sample receiving slots 110. A cooling component 230 can be connected below the lower light-blocking layer 540.

[0148] exist Figure 16 In the embodiment shown, the light-blocking layer 540 is made of an opaque material and is a thermally conductive material.

[0149] The following is a possible application scenario for the sample concentration device provided in this application:

[0150] Currently, detection methods such as immunocellular assays, flow cytometry, PCR quantitative detection, or immunomagnetic bead enrichment combined with chemiluminescence or fluorescence methods are common. However, immunocellular assays have limitations, including the limited number of cells that can be detected and low efficiency; flow cytometry has low sensitivity; and PCR detection is time-consuming, complex, and difficult to accurately detect samples with low levels of contamination, requiring pre-enrichment treatment. Furthermore, some cells are not culturable and cannot be detected using traditional plate detection methods. The sample concentration device described in this application provides a highly integrated, rapid, and efficient cell quantification detection device capable of simultaneously detecting both low and high concentration samples.

[0151] In this scenario, the following steps are included:

[0152] 1. Perform fluorescent staining on the sample to be tested so that the target sample can be excited with fluorescence;

[0153] 2. Inject a quantitative amount of the sample to be tested into the sample concentration device to concentrate the sample;

[0154] 3. After concentration, turn on the light source 510 to excite fluorescence in the target sample;

[0155] 4. Detector 520 receives the light signal of the fluorescence;

[0156] 5. Upload the optical signal to the data analysis system for counting and display.

[0157] Concentrating low-concentration samples can greatly improve detection efficiency.

[0158] Sample Concentration Methods

[0159] The sample concentration method of this application is implemented using the sample concentration apparatus described above, such as... Figure 17 As shown, the sample concentration methods include:

[0160] S10: Adjust the temperature of the sample in the sample container 110 so that when the actual liquid level of the sample drops to the target liquid level, the actual liquid level is controlled to be maintained at the target liquid level; wherein, the target liquid level is the liquid level in the sample container 110 corresponding to the target volume of the sample, and the target volume is determined according to the initial volume of the sample and the preset concentration factor.

[0161] As a first implementation of controlling the actual liquid level to remain at the target liquid level, controlling the actual liquid level to remain at the target liquid level includes: making the temperature at the actual liquid level of the sample equal to the dew point temperature at the location of the sample container 110.

[0162] As a second way to control the actual liquid level to remain at the target liquid level, controlling the actual liquid level to remain at the target liquid level includes: making the vapor partial pressure at the location of the sample container 110 equal to the saturated vapor pressure.

[0163] As a third way to control the actual liquid level to remain at the target liquid level, controlling the actual liquid level to remain at the target liquid level includes: making the relative humidity at the location of the sample container 110 equal to the saturation humidity.

[0164] Specifically, S10 may also include:

[0165] S11: The temperature of the sample located between the initial liquid level and the target liquid level is greater than the dew point temperature, the temperature of the sample located at the target liquid level is equal to the dew point temperature, and the temperature of the sample located below the target liquid level is less than the dew point temperature; wherein, the initial liquid level is the liquid level in the sample container 110 corresponding to the initial volume of the sample.

[0166] Specifically, S11 may also include:

[0167] S12: The temperature of the sample concentration area 131 of the side wall 130 is adjusted by the temperature control module 200 set on the side wall 130 of the sample container 110; wherein the initial liquid level and the target liquid level are both located in the sample concentration area.

[0168] Furthermore, when the sidewall 130 includes the first variable temperature region 133, S12 may also include:

[0169] S12a: The heating component 210 of the temperature control module 200 heats the first position 1311 of the sample concentration region 130 so that the temperature of the first position 1311 is greater than the dew point temperature; and the cooling component 230 of the temperature control module 200 cools the second position 1313 in the sample concentration region 131 that is lower than the first position 1311 so that the temperature of the second position 1313 is less than the dew point temperature.

[0170] Alternatively, when the sidewall 130 includes a first variable temperature region 133, an intermediate region 135, and a second variable temperature region 137, S12 may further include:

[0171] S12b: The heating element 210 heats the upper end of the first variable temperature zone 133, and the cooling element 230 cools the lower end of the first variable temperature zone 133, so that the temperature at the target liquid level is equal to the dew point temperature.

[0172] Furthermore, when the sample concentration device also includes a liquid level sensor, the sample concentration method further includes:

[0173] S31: Detect the actual liquid level of the sample;

[0174] S32: Determine whether the actual liquid level is at the target liquid level.

[0175] Furthermore, when the sample concentration device also includes a covering component 300, the sample concentration method further includes:

[0176] S40: During sample concentration, the covering component 300 forms a sealed evaporation chamber above the sample receiving tank.

[0177] Furthermore, when the sample concentration apparatus also includes a covering component 300 and a humidity control device, the sample concentration method may further include:

[0178] S50: During sample concentration, the humidity control module 400 controls the humidity in the evaporation chamber to keep the dew point temperature constant.

[0179] Detection methods

[0180] The detection methods include the aforementioned sample concentration methods, and the detection methods also include:

[0181] S60: After the sample concentration is completed, the photodetector 500 performs photodetection on the sample located in the sample container.

[0182] Specifically, in one possible implementation, S60 may include:

[0183] S61: Light source 510 generates light that shines into the sample, generating a light signal in the sample;

[0184] S62: Detector 520 receives light signals emitted from or absorbed by the sample and generates a detection signal in response to the light signals;

[0185] S63: The data analysis system receives the detection signal and generates a detection result in response to the detection signal.

[0186] Manufacturing method

[0187] As described above, the sample concentration apparatus of this application is particularly suitable for concentrating small doses of samples. To facilitate the concentration of small doses, the sample receiving tank has a small size, such as on the micrometer scale. Therefore, the sample receiving component 100 can be manufactured using MEMS processes.

[0188] like Figure 18As shown, when the sample containing component 100 includes only the first variable temperature region 133 and excludes the intermediate region 135 and the second variable temperature region 137, the method for manufacturing the sample concentration device includes:

[0189] a. Obtain a silicon wafer with a thickness of 200 micrometers to 1500 micrometers, and polish the upper and lower surfaces of the silicon wafer;

[0190] b. Using a low-pressure chemical vapor deposition (LPCVD) process, silicon oxide layers of tetraethyl orthosilicate (TEOS), borosilicate glass (BPSG), and phosphorus silicate glass (PSG) are grown on the upper and lower surfaces of a silicon wafer, respectively. The thickness of the silicon oxide layers ranges from 300 micrometers to 1000 micrometers, with high optical transmittance and controllable stress.

[0191] c. Using processes such as magnetron sputtering / evaporation deposition, Ti&Pt / Ti&Mo is deposited on the silicon oxide layer on the upper surface of the silicon wafer to form a heating electrode (i.e., heating component 210). The thickness of the deposited Ti is 10 nanometers to 40 nanometers, and the thickness of the deposited Pt or Mo is 150 nanometers to 350 nanometers.

[0192] d. A silicon oxide layer is deposited on the upper surface of the heating electrode and the upper surface of the upper silicon oxide layer by means of processes such as plasma enhanced chemical vapor deposition (PECVD) or sub-atmospheric pressure chemical vapor deposition (SACVD) to improve passivation performance. The thickness of the silicon oxide layer in this step is 2 micrometers to 4 micrometers.

[0193] e. Etch pads on the heated electrodes to create wet etching or deep silicon mask windows; and

[0194] f. Use wet etching solutions, such as potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH), for wet etching; or use dry etching to fabricate a sample concentration device.

[0195] It should be noted that, between step b and step c, the manufacturing method may further include:

[0196] A layer of LPCVD silicon nitride can be added to the surface of the silicon oxide layer on the upper surface of the silicon wafer as a mask for wet etching, with a thickness of 100 nanometers to 300 nanometers.

[0197] like Figure 19 As shown, when the sample containing component 100 includes both a first variable temperature region 133 and an intermediate region 135 and a second variable temperature region 137, the manufacturing method of the sample concentration device includes:

[0198] a. Obtain a silicon wafer with a thickness of 200 micrometers to 1500 micrometers, and polish the upper and lower surfaces of the silicon wafer;

[0199] b. Deposit a silicon oxide layer of tetraethyl orthosilicate (TEOS), borosilicate glass (BPSG), or phosphosilicate glass (PSG) with a thickness of 500 nm to 2500 nm using a low-pressure chemical vapor deposition (LPCVD) process. This layer has high optical transmittance and controllable stress (as a thermal insulation material, i.e., the middle region 135).

[0200] c. Bond the two silicon wafers together;

[0201] d. Thinning and polishing result in a surface roughness Ra better than 2 nanometers;

[0202] e. Deposit a silicon oxide layer of tetraethyl orthosilicate (TEOS), borosilicate glass (BPSG), or phosphosilicate glass (PSG) with a thickness of 500 nm to 2000 nm using a low-pressure chemical vapor deposition (LPCVD) process.

[0203] A layer of LPCVD silicon nitride can be added to the surface as a mask for etching, with a thickness of 100 nanometers to 300 nanometers;

[0204] f. Ti&Pt / Ti&Mo are deposited through processes such as magnetron sputtering / evaporation coating, with the thickness of deposited Ti ranging from 10 nanometers to 40 nanometers and the thickness of deposited Pt or Mo ranging from 150 nanometers to 350 nanometers.

[0205] g. Silicon oxide is deposited using processes such as plasma-enhanced chemical vapor deposition (PECVD) or sub-atmospheric chemical vapor deposition (SACVD) to improve passivation performance, with a thickness of 2000 nm to 4000 nm.

[0206] h. Etch pads to create wet etching or deep silicon mask windows;

[0207] i. Use wet etching solutions, such as potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH), to perform wet etching; or use dry etching to fabricate a sample concentration device.

[0208] It should be noted that, between step b and step c, the manufacturing method may further include:

[0209] A layer of LPCVD silicon nitride, with a thickness of 100 to 300 nanometers, can be added to the surface of the first silicon oxide layer on the upper surface of the silicon wafer as a mask for wet etching.

[0210] With a surface silicon thickness of 5 to 50 micrometers and a silicon oxide thickness of 500 to 3000 nanometers, a better dew point temperature distribution effect can be achieved.

[0211] The size of the wet etching window ranges from 280 micrometers to 2500 micrometers.

[0212] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present application and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A sample concentration device, characterized in that, include: A sample receiving component, the sample receiving component including a sample receiving groove, the sidewall of the sample receiving groove including a sample concentration region, the sample concentration region extending along the depth direction of the sample receiving groove; as well as A temperature control module is configured to control the temperature of the sample concentration area to form a temperature range within the sample concentration area. The temperature within the temperature range decreases continuously from top to bottom along the depth direction, and the temperature range includes the dew point temperature at the location of the sample container. The position in the sample concentration area corresponding to the temperature and the dew point temperature is the target liquid level.

2. The sample concentration apparatus according to claim 1, characterized in that, The dew point temperature is lower than the ambient temperature at the location of the sample container.

3. The sample concentration apparatus according to claim 1 or 2, characterized in that, The temperature control module includes: A heating element, wherein the heating element is used to heat a first location in the sample concentration region such that the temperature at the first location is greater than the dew point temperature; and A cooling component is used to cool a second location in the sample concentration region so that the temperature at the second location is lower than the dew point temperature. Along the depth direction, the first position is higher than the second position to form the temperature range.

4. The sample concentration apparatus according to claim 3, characterized in that, The sidewall also includes a first variable temperature region made of thermally conductive material, and the sample concentration region is located within the first variable temperature region.

5. The sample concentration apparatus according to claim 4, characterized in that, The distance between the lower end of the first variable temperature zone and the bottom wall of the sample container is zero.

6. The sample concentration apparatus according to claim 5, characterized in that, The second position is the lower end of the first variable temperature region.

7. The sample concentration apparatus according to claim 6, characterized in that, The first position is the upper end of the first variable temperature region.

8. The sample concentration apparatus according to claim 4, characterized in that, The thermal conductivity of the first variable temperature region is greater than 50 W / (m K).

9. The sample concentration apparatus according to claim 4, characterized in that, The material of the first variable temperature region is selected from one of ceramics, silicon, metal, silicon carbide, and aluminum nitride.

10. The sample concentration apparatus according to claim 3, characterized in that, The sidewall further includes a first variable-temperature region, a middle region, and a second variable-temperature region stacked sequentially from top to bottom along the depth direction. The thermal conductivity of the middle region is lower than that of the first variable-temperature region and the second variable-temperature region. The first position is located within the first variable temperature region, and the second position is located within the second variable temperature region.

11. The sample concentration apparatus according to claim 10, characterized in that, The material of the first variable temperature region is selected from one of ceramics, silicon, metal, silicon carbide, and aluminum nitride; and / or The material of the intermediate region is selected from one of silicon oxide, porous silicon, silicon nitride, and polyimide; and / or The material of the second variable temperature region is selected from one of ceramics, silicon, metal, silicon carbide, and aluminum nitride.

12. The sample concentration apparatus according to claim 10, characterized in that, The thickness of the intermediate region is 500 nanometers to 3000 nanometers.

13. The sample concentration apparatus according to claim 12, characterized in that, The thickness of the first variable temperature region is 50 micrometers to 2000 micrometers; and / or The thickness of the second variable temperature region is 5 micrometers to 200 micrometers.

14. The sample concentration apparatus according to claim 10, characterized in that, The distance between the lower end of the second variable temperature zone and the bottom wall of the sample container is zero.

15. The sample concentration apparatus according to claim 1, characterized in that, The sample-containing component is manufactured using MEMS manufacturing processes.

16. The sample concentration apparatus according to claim 1, characterized in that, The sample concentration device also includes: A liquid level sensor, used to detect the liquid level of a sample.

17. The sample concentration apparatus according to claim 1, characterized in that, The sample concentration device also includes: A covering component for forming a sealed evaporation chamber above the sample receiving slot.

18. The sample concentration apparatus according to claim 17, characterized in that, The covering component includes: A lid that covers the sample-receiving component.

19. The sample concentration apparatus according to claim 17, characterized in that, The covering component includes: The container includes a sealable accommodating space, and the sample accommodating component is disposed within the accommodating space.

20. The sample concentration apparatus according to claim 17, characterized in that, The sample concentration device also includes: A humidity control module is connected to the evaporation chamber and is used to control the humidity inside the evaporation chamber.

21. The sample concentration apparatus according to claim 20, characterized in that, The humidity control module is mounted on the covering component.

22. The sample concentration apparatus according to claim 20, characterized in that, The humidity control module includes: A humidification unit, wherein the humidification unit is used to increase the humidity in the evaporation chamber; and / or A drying unit is used to reduce the humidity in the evaporation chamber.

23. The sample concentration apparatus according to claim 1, characterized in that, The sample concentration device also includes: A light detection component configured to detect emitted or absorbed light from a sample located within the sample receiving slot.

24. The sample concentration apparatus according to claim 23, characterized in that, The optical detection component includes: A light source configured to emit light that illuminates the sample; A detector configured to receive light signals emitted from or absorbed by the sample and to generate a detection signal in response to the received light signals; and A data analysis system configured to receive the detection signal and generate a detection result in response to the received detection signal.

25. The sample concentration apparatus according to claim 24, characterized in that, The bottom wall of the sample container is transparent at a position corresponding to the bottom of the sample container, and the detector is located below the bottom of the container.

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