Impedance matched dual drive push-pull electro-optic modulator

Abstract

The application discloses a kind of impedance-matched double-drive push-pull electro-optical modulators, belong to silicon-based photonics technical field.It includes optical waveguide phase shifter and electrode, electrode is the structure of GSGSG structure coplanar waveguide traveling wave electrode and direct current electrode cooperation, optical waveguide phase shifter includes two groups of parallel phase shifter groups, direct current electrode is arranged between the two waveguide arms of each phase shifter group, electrode ground electrode G1, G2, G3 are electrically connected by Contect_G, electrode adopts multilayer interconnection structure and waveguide arm of optical waveguide phase shifter to realize electric connection.The above-mentioned kind of impedance-matched double-drive push-pull electro-optical modulator effectively restricts radio frequency electric field, greatly reduces the electric field leakage and microwave loss caused by waveguide layout asymmetry, ensures the stability of direct current bias point and the quality of radio frequency modulation signal, while also help to optimize layout, chip overall structure is more compact, more suitable for large-scale, high-density optoelectronic integration.

Description

Technical Field

[0001] This invention relates to the field of silicon-based photonics technology, and more particularly to an impedance-matched dual-drive push-pull electro-optic modulator. Background Technology

[0002] The rise of the Internet, cloud computing, artificial intelligence (AI), and high-performance computing (HPC) has led to an exponential increase in data traffic within data centers and between chips. Traditional electrical interconnects face fundamental bottlenecks at high speeds, including significant signal attenuation, soaring power consumption, and physical size limitations. Optical signals, with their inherent advantages of ultra-high bandwidth, low loss, resistance to electromagnetic interference, and parallel transmission, are considered the only feasible solution to overcome the bottlenecks of electrical interconnects. However, traditional lithium niobate platforms are bulky, costly, and power-consuming, and are incompatible with complementary metal-oxide-semiconductor (CMOS) processes, making integration difficult and unable to meet the core requirements of data centers for "low cost, high density, and large-scale manufacturing."

[0003] Silicon photonics platforms have been extensively studied due to their compatibility with CMOS processes. Silicon-based electro-optic modulators, as core signal conversion devices in photonic integrated circuits, directly determine the overall system performance. Among them, the Mach-Zehnder interferometer (MZI) structure is widely used due to its wide spectrum and high stability. Currently, common silicon-based electro-optic modulators are divided into dual-drive differential electro-optic modulators and single-drive push-pull modulators. Traditional single-drive push-pull structures often rely on a single RF signal to drive both arms of the MZI, which easily introduces phase errors and amplitude imbalances at high frequencies, leading to degraded extinction ratios and signal distortion. On the other hand, although some solutions adopt a dual-drive differential architecture, they usually only optimize RF performance, failing to achieve coordinated management of DC bias and RF modulation, as well as isolated signal transmission. Furthermore, there is an inherent trade-off between modulation efficiency and bandwidth, accompanied by severe signal crosstalk and large device size. At high speeds, issues such as the synchronization of drive signals, radio frequency losses, and high signal reflection and high-frequency transmission performance degradation caused by impedance mismatch become key bottlenecks restricting further performance breakthroughs. Summary of the Invention

[0004] The purpose of this invention is to provide an impedance-matched dual-drive push-pull electro-optic modulator to solve the above-mentioned technical problems.

[0005] To achieve the above objectives, the present invention provides an impedance-matched dual-drive push-pull electro-optic modulator, comprising an optical waveguide phase shifter and electrodes. The electrodes are coplanar waveguide traveling wave electrodes and DC electrodes with a GSGSG structure working in tandem. The optical waveguide phase shifter includes two sets of parallel phase shifter groups. A DC electrode is provided between the two waveguide arms of each set of phase shifters. The ground electrodes G1, G2, and G3 of the electrodes are electrically connected to each other through Contact_G. The electrodes adopt a multilayer interconnection structure to achieve electrical connection with the waveguide arms of the optical waveguide phase shifter.

[0006] Preferably, the two phase shifter groups are a first phase shifter group and a second phase shifter group. The two waveguide arms of the first phase shifter group are respectively provided with ground electrode G1 and radio frequency electrode S1 on both sides. The two waveguide arms of the second phase shifter group are respectively provided with ground electrode G3 and radio frequency electrode S2 on both sides. The ground electrode G2 is located between the first phase shifter group and the second phase shifter group.

[0007] Preferably, the multilayer interconnect structure includes, from bottom to top, a via 1 layer, a metal 1 layer, a via 2 layer, and a metal 2 layer. The via 1 layer is used to realize the electrical connection between the metal 1 layer and the silicon device layer, and the via 2 layer is used to realize the signal transmission between the metal 1 layer and the metal 2 layer.

[0008] Preferably, the electrodes consist of ground electrodes G1, G2, G3, radio frequency electrodes S1, S2, and DC electrodes DC1, DC2. The radio frequency electrodes S1, S2, and DC electrodes DC1, DC2 are mainly formed on metal layer 1, and the ground electrodes G1, G2, G3 have a double-layer electrode structure along the length of the device.

[0009] Preferably, the electrodes form a G-DC-SGS-DC-G structure, integrating the DC bias function and the RF function onto the modulator device to achieve built-in structured impedance matching.

[0010] Preferably, the radio frequency signal is transmitted to the metal layer 2 through the through-hole 2 layer at both ends of the radio frequency electrodes S1 and S2, respectively.

[0011] Preferably, the Contact_G on the metal layer 2 is located above the RF electrodes S1 and S2 and extends along the length direction of the RF electrodes S1 and S2. The Contact_G is used to balance the RF electric field distribution and reduce RF electric field leakage and microwave loss.

[0012] Preferably, G1, S1, G3, and S2 transmit radio frequency electrical signals through metal layer 1, metal layer 2, and interconnecting vias between each layer, so that the radio frequency signals and DC signals do not cross or couple on the plane.

[0013] Preferably, DC electrodes DC1 and DC2 transmit DC signals in metal layer 1 and provide DC bias voltage to the corresponding optical waveguide phase shifter through through-hole layer 1.

[0014] Preferably, the modulator further includes a first waveguide beamsplitter and a second waveguide beam combiner. The first waveguide beamsplitter is a 1×2 MMI structure or a bidirectional grating coupler, and the second waveguide beam combiner is a 2×1 MMI structure or a bidirectional grating coupler. The bidirectional grating coupler of the first waveguide beamsplitter serves as both an input optical interface and an optical beam splitter, and the bidirectional grating coupler of the second waveguide beam combiner serves as both an output optical interface and an optical beam combiner.

[0015] Therefore, the present invention employs the above-mentioned impedance-matched dual-drive push-pull electro-optic modulator, which has the following beneficial effects: 1. The G-DC-SGS-DC-G structure formed by the electrodes realizes built-in structured impedance matching, which effectively improves the terminal impedance of the modulator, solves the signal reflection problem caused by impedance mismatch in traditional modulators, and optimizes the transmission performance of high-frequency signals.

[0016] 2. The Contact_G on the metal layer 2 extends along the length of the RF electrodes S1 and S2 and is located above them. This can reduce RF electric field leakage and microwave loss caused by waveguide asymmetry, improve the RF loss problem of traditional modulators, and increase the electro-optic bandwidth.

[0017] 3. A multi-layer interconnection structure is adopted to realize the independent transmission of DC signals and radio frequency signals, so that the two types of signals do not cross or couple on the plane, and realize the coordinated management of DC bias and radio frequency modulation.

[0018] 4. The optical waveguide phase shifter is designed as two parallel phase shifter groups with a dual-drive push-pull architecture, which improves the phase error and amplitude imbalance problems that are prone to occur in the traditional single-drive push-pull structure, effectively reduces half-wave voltage and device power consumption, and reduces signal distortion.

[0019] 5. The DC bias function and RF function are integrated into the modulator device body, eliminating the need for additional external impedance matching networks and other auxiliary structures. This achieves a high degree of chip integration and is fully compatible with CMOS technology, meeting the application requirements of silicon photonics platforms.

[0020] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a cross-sectional view of portion A-A' of the present invention; Figure 3 This is a cross-sectional view of portion B-B' of the present invention; Figure 4 This is a cross-sectional view of the C-C' portion of the present invention.

[0022] Figure Labels 101. First waveguide beamsplitter; 102. Second waveguide beamsplitter; 103. Strip-to-ridge structure; 104. Optical waveguide phase shifter; 104-1. First waveguide arm; 104-2. Second waveguide arm; 104-3. Third waveguide arm; 104-4. Fourth waveguide arm; 105. Electrode; 106. Ridge-to-strip structure; 107. First waveguide beam combiner; 108. Second waveguide beam combiner; 201. Silicon substrate layer; 202. Silicon dioxide substrate layer; 203. Silicon device layer; 204. Through-hole layer 1; 205. Metal layer 1; 206. Through-hole layer 2; 207. Metal layer 2. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages disclosed in the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the embodiments of the present invention and are not intended to limit the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of this application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.

[0024] It should be noted that the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, such as a process, method, system, product, or server that includes a series of steps or units, not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or device.

[0025] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0026] like Figures 1-4As shown, the present invention provides an impedance-matched dual-drive push-pull electro-optic modulator, which comprises a silicon substrate layer 201, a silicon dioxide substrate layer 202, and a silicon device layer 203, and integrates a multilayer interconnect structure and various optoelectronic devices. The multilayer interconnect structure includes, from bottom to top, a via 1 layer 204, a metal 1 layer 205, a via 2 layer 206, and a metal 2 layer 207. The optoelectronic devices specifically include a first waveguide beamsplitter 101, two second waveguide beamsplitters 102, four strip-to-ridge structures 103, an optical waveguide phase shifter 104, an electrode 105, four ridge-to-strip structures 106, two first waveguide beam combiners 107, and one second waveguide beam combiner 108. The silicon device layer 203 is a silicon-based platform and the core carrier for fabricating silicon-based optical devices. It can ensure the integration compatibility of all optical devices and meet the large-scale manufacturing requirements of CMOS technology. The first waveguide beam splitter 101, the second waveguide beam splitter 102, the strip-to-ridge structure 103, the optical waveguide phase shifter 104, the ridge-to-strip structure 106, the first waveguide beam combiner 107, and the second waveguide beam combiner 108 are all fabricated on the silicon device layer 203. The electrode 105 is composed of a through-hole layer 1 204, a metal layer 1 205, a through-hole layer 2 206, and a metal layer 2 207. It is used to transmit electrical signals to the optical waveguide phase shifter 104 and realize electro-optic modulation control. It is the core control component for realizing the modulation conversion of electrical signals to optical signals.

[0027] The core optical modulation components of this modulator are the optical waveguide phase shifter 104 and the electrode 105. Electrode 105 is a coplanar waveguide traveling-wave electrode with a GSGSG structure. This electrode structure can significantly reduce the signal electrode spacing, effectively reducing the overall device width, improving integration density while reducing signal crosstalk. The optical waveguide phase shifter 104 is a P- and N-doped ridge-shaped silicon-based optical waveguide. Efficient changes in the refractive index of the silicon waveguide can be achieved through carrier concentration modulation. The ridge structure is more conducive to the interaction between electrical and optical signals, improving electro-optical performance. The modulation efficiency is achieved through four waveguide arms: waveguide arm 104-1, waveguide arm 104-2, waveguide arm 104-3, and waveguide arm 104-4. These four waveguide arms form two parallel phase shifter groups. Waveguide arm 104-1 and waveguide arm 104-2 form the first phase shifter group, while waveguide arm 104-3 and waveguide arm 104-4 form the second phase shifter group. The phase shifter group adopts a single-drive push-pull design, which can effectively reduce the PN junction capacitance and significantly reduce microwave transmission loss. A DC electrode is provided between the two waveguide arms of each phase shifter group. The ground electrodes G1, G2, and G3 of electrode 105 are electrically connected to each other through Contact_G. Contact_G can realize the electrical connection of G1, G2, and G3, and at the same time balance the distribution of the radio frequency electric field, reduce the leakage of the radio frequency electric field caused by the asymmetry of the waveguide layout, and avoid the imbalance of modulation efficiency caused by the uneven distribution of the waveguides on both sides of the radio frequency signal electrode. In addition, electrode 105 adopts the above-mentioned multi-layer interconnection structure and is electrically connected to the waveguide arm of the optical waveguide phase shifter 104, ensuring the precise control of the electrical signal on the optical waveguide phase shifter 104, and realizing the efficient conversion of electrical signal to optical signal.

[0028] Two sets of phase shifters are configured in a corresponding relationship with the RF electrodes. The ground electrode G1 and the RF electrode S1 are respectively set on both sides of the two waveguide arms of the first phase shifter group. The ground electrode G3 and the RF electrode S2 are respectively set on both sides of the two waveguide arms of the second phase shifter group. The ground electrode G2 is set between the first phase shifter group and the second phase shifter group. The addition of the ground electrode G2 between S1 and S2 can effectively reduce crosstalk between signals and block the RF signal coupling between S1 and S2. The ground electrode G2 is connected to G1 and G3 through Contact_G, and together they form a dual-drive traveling wave electrode with the structure of G1, S1, G2, S2, G3. Together with the DC electrodes DC1 and DC2, they form electrode 105. The dual-drive architecture, combined with the series phase shifter group, can obtain a larger phase difference under the same driving voltage, effectively reducing the half-wave voltage and device power consumption.

[0029] The multilayer interconnect structure provides the foundation for the transmission of electrical signals and device control. Among them, the via 1 layer 204 is used to realize the electrical connection between the metal 1 layer 205 and the silicon device layer 203. The radio frequency or DC electrical signal of the metal 1 layer 205 can be transmitted to the optical waveguide phase shifter 104 through the via 1 layer 204 to realize the control of the optical waveguide phase shifter 104. It is a key channel for the transmission of electrical signals to optical devices, ensuring the accuracy of the electrical signal modulation of the optical device. The via 2 layer 206 is used to realize the transmission of radio frequency electrical signals between the metal 1 layer 205 and the metal 2 layer 207, realizing low-loss transmission of radio frequency signals between metal layers and ensuring the signal synchronization of the multilayer electrode structure. The metal 2 layer 207 can transmit radio frequency electrical signals and connect to the ground electrodes G1, G2, and G3 in the electrode 105 through the Contact_G.

[0030] Electrode 105 consists of ground electrodes G1, G2, and G3, radio frequency electrodes S1 and S2, and DC electrodes DC1 and DC2. The radio frequency electrodes S1 and S2 and the DC electrodes DC1 and DC2 are primarily formed on metal layer 1 205. Ground electrodes G1, G2, and G3 belong to a coplanar waveguide traveling wave electrode system, which, together with the radio frequency electrodes S1 and S2, constitutes a GGSSG structure of coplanar waveguide traveling wave electrodes. Electrode 105 forms a G-DC-SGS-DC-G structure, integrating DC bias and radio frequency functions onto the modulator device. This eliminates the need for additional biasers or complex electrode routing, achieving built-in, structured impedance matching. It eliminates the need for external biasers or impedance matching networks, effectively improving the modulator's terminal impedance and resolving signal reflection problems caused by impedance mismatch in traditional modulators, thus facilitating stable transmission of high-frequency signals. Ground electrodes G1, G2, and G3 form a double-layer electrode structure along the length of the device. The coplanar waveguide traveling wave electrodes (G1, S1, G2, S2, G3) can be ordinary rectangular electrodes or other electrode structures such as T-shaped slow-wave electrodes, allowing for flexible selection based on bandwidth and loss requirements, thus improving the modulator's adaptability to different scenarios. Radio frequency (RF) signals are transmitted to metal layer 207 only at the two ends of RF electrodes S1 and S2 via vias 206. The main body of the transmission occurs on metal layer 1 205. RF electrodes S1 and S2 are primarily composed of vias 204 and metal layer 1 205, transmitting RF signals. Finally, together with ground electrodes G1, G2, and G3, they are connected to the modulator's RF interface via metal layer 207. This design reduces RF signal transmission loss in the multi-layer structure, ensuring high-frequency signal transmission quality. The Contact_G connects G1, G2, and G3 at intervals along the length of the device in the metal layer 207. This balances the waveguide distribution on both sides of the RF signal electrodes, avoiding modulation efficiency imbalance caused by uneven electric field. The Contact_G is located above the RF electrodes S1 and S2 and extends along their length. It balances the RF electric field distribution, reduces RF electric field leakage and microwave loss caused by asymmetrical waveguide layout, and reduces electric field leakage caused by uneven waveguide distribution on both sides of the RF signal electrodes S1 and S2. It effectively constrains the RF electric field distribution, improves the electro-optic bandwidth of the device, and makes the frequency response flatter.

[0031] G1, S1, G3, and S2 transmit radio frequency (RF) signals through metal layer 1 (205), metal layer 2 (207), and interconnecting vias between the layers. DC electrodes DC1 and DC2 transmit DC signals through metal layer 1 (205) and provide DC bias voltage to the corresponding optical waveguide phase shifter 104 through via layer 1 (204). DC bias electrode DC1 is placed between the first waveguide arm 104-1 and the second waveguide arm 104-2, and DC bias electrode DC2 is placed between the third waveguide arm 104-3 and the fourth waveguide arm 104-4. This achieves separate transmission of RF signals and DC signals, ensuring that the two types of signals do not cross or couple on the plane, avoiding cross-coupling between RF signals and DC signals, ensuring the stability of the DC bias point, and improving the transmission quality of RF modulation signals while avoiding modulation distortion caused by signal interference.

[0032] The optical signal transmission and modulation of this modulator follow a complete optical path flow. The first waveguide beamsplitter 101 is a 1×2 MMI structure, designed from a strip waveguide. Its input end can be connected to an end-face coupler or a grating coupler, serving as an optical input interface to split the input light into two beams, which are then fed into two second waveguide beamsplitters 102 respectively. The MMI structure can achieve uniform beam splitting of the optical signal, ensuring the consistency of the subsequent two optical path modulations. The second waveguide beamsplitter 102 is also a 1×2 MMI structure, designed from a strip waveguide. Its input end is connected to the first waveguide beamsplitter 101, further splitting the received light into two beams, thereby generating four optical signals. The secondary beam splitting design adapts to the modulation requirements of four waveguide arms, ensuring power balance of each optical signal. The strip-to-ridge structure 103 is a gradient structure that transforms a strip waveguide into a ridge waveguide. It can connect to the second waveguide beam splitter 102 and the optical waveguide phase shifter 104, enabling a smooth transition from strip waveguide to ridge waveguide, reducing mode loss during optical transmission, and improving optical signal transmission efficiency. After passing through the strip-to-ridge structure 103, the four optical signals enter the four waveguide arms of the optical waveguide phase shifter 104. Under the action of the electrical signal of the electrode 105, the optical waveguide phase shifter 104 changes the refractive index of the silicon waveguide by the applied voltage, thereby achieving electro-optic modulation of the optical wave phase.

[0033] The ridge-to-strip structure 106 is a gradient structure that transforms a ridge waveguide into a strip waveguide. It connects the optical waveguide phase shifter 104 and the first waveguide combiner 107, enabling a smooth transition from the ridge waveguide to the strip waveguide, reducing mode loss after optical modulation, and ensuring effective transmission of the modulated optical signal. The modulated optical signal is transmitted from the ridge waveguide to the strip waveguide via the ridge-to-strip structure 106. The first waveguide combiner 107 is a 2×1 MMI structure designed from a strip waveguide. Its input end is connected to the two ridge-to-strip structures 106, which combine the light from the first phase shifter group and the second phase shifter group respectively. It converts the phase change in the optical waveguide phase shifter 104 into an intensity change and outputs it to the second waveguide combiner 108. It is a key component for realizing the conversion from phase modulation to intensity modulation. The second waveguide combiner 108 is a 2×1 The MMI structure, designed with strip waveguides, further combines the light output from the two first waveguide combiners 107, enabling efficient synthesis of two modulated optical signals, ensuring the integrity of the output optical signal, and meeting the interface adaptation requirements of subsequent optical transmission links. Its output end is connected to an end-face coupler or a grating coupler, serving as the optical output interface of the modulator.

[0034] In this invention, each device can achieve the same function using different alternative structures. The first waveguide beam splitter 101 can be a 1×2 MMI structure or a bidirectional grating coupler. This bidirectional grating coupler can serve as both an input optical interface and a beam splitter. The second waveguide beam combiner 108 can be a 2×1 MMI structure or a bidirectional grating coupler. This bidirectional grating coupler can serve as both an output optical interface and a beam combiner. The bidirectional grating coupler combines the functions of an interface and beam splitting / combining, reducing the number of integrated devices, further improving the integration of the modulator, and adapting to the application requirements of high-density optoelectronic integration.

[0035] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of the present invention, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. An impedance-matched dual-drive push-pull electro-optic modulator, characterized in that: It includes an optical waveguide phase shifter and electrodes. The electrodes are coplanar waveguide traveling wave electrodes and DC electrodes with a GSGSG structure working together. The optical waveguide phase shifter contains two sets of parallel phase shifter groups. A DC electrode is provided between the two waveguide arms of each set of phase shifters. The ground electrodes G1, G2, and G3 of the electrodes are electrically connected to each other through Contact_G. The electrodes adopt a multi-layer interconnection structure to achieve electrical connection with the waveguide arms of the optical waveguide phase shifter.

2. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 1, characterized in that: The two phase shifter groups are the first phase shifter group and the second phase shifter group. The ground electrode G1 and the radio frequency electrode S1 are respectively set on both sides of the two waveguide arms of the first phase shifter group. The ground electrode G3 and the radio frequency electrode S2 are respectively set on both sides of the two waveguide arms of the second phase shifter group. The ground electrode G2 is located between the first phase shifter group and the second phase shifter group.

3. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 1, characterized in that: The multilayer interconnect structure includes, from bottom to top, a via 1 layer, a metal 1 layer, a via 2 layer, and a metal 2 layer. The via 1 layer is used to realize the electrical connection between the metal 1 layer and the silicon device layer, and the via 2 layer is used to realize the signal transmission between the metal 1 layer and the metal 2 layer.

4. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 3, characterized in that: The electrodes consist of ground electrodes G1, G2, G3, radio frequency electrodes S1, S2, and DC electrodes DC1, DC2. The radio frequency electrodes S1, S2 and DC electrodes DC1, DC2 are mainly formed in metal layer 1, while the ground electrodes G1, G2, G3 are double-layer electrode structures along the length of the device.

5. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 4, characterized in that: The electrodes form a G-DC-SGS-DC-G structure, integrating DC bias and RF functions onto the modulator device to achieve built-in structured impedance matching.

6. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 5, characterized in that: Radio frequency signals are transmitted to metal layer 2 through vias at both ends of radio frequency electrodes S1 and S2, respectively.

7. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 6, characterized in that: The Contact_G on the metal layer 2 is located above the RF electrodes S1 and S2 and extends along the length of the RF electrodes S1 and S2. The Contact_G is used to balance the RF electric field distribution and reduce RF electric field leakage and microwave loss.

8. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 7, characterized in that: G1, S1, G3, and S2 transmit radio frequency electrical signals through metal layer 1, metal layer 2, and interconnecting vias between each layer, ensuring that the radio frequency signals and DC signals do not cross or couple on the plane.

9. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 8, characterized in that: DC electrodes DC1 and DC2 transmit DC signals in metal layer 1 and provide DC bias voltage to the corresponding optical waveguide phase shifter through through-hole layer 1.

10. The impedance-matched dual-drive push-pull electro-optic modulator according to claim 1, characterized in that: The modulator also includes a first waveguide beamsplitter and a second waveguide beam combiner. The first waveguide beamsplitter is a 1×2 MMI structure or a bidirectional grating coupler, and the second waveguide beam combiner is a 2×1 MMI structure or a bidirectional grating coupler. The bidirectional grating coupler of the first waveguide beamsplitter serves as both an input optical interface and an optical beam splitter, and the bidirectional grating coupler of the second waveguide beam combiner serves as both an output optical interface and an optical beam combiner.

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