High electron mobility transistor device and method of forming the same

Abstract

The application provides a high electron mobility transistor device and a forming method thereof. The high electron mobility transistor device is formed by forming a high-resistance buffer layer on a gradient buffer layer. The high-resistance buffer layer comprises a first carbon-doped region and at least two second carbon-doped regions. The carbon-doped concentration of the second carbon-doped regions is greater than that of the first carbon-doped region. All the second carbon-doped regions correspond to all the field plate regions one by one, and the second carbon-doped regions are located at the edges of the field plate regions away from the gate regions. In this way, selective high doping can be realized, so that the carbon-doped concentration of the second carbon-doped regions of the high-resistance buffer layer is greater than that of the first carbon-doped region. Therefore, the carbon-doped concentration of the edges of the field plate regions can be increased, the peak electric field intensity of the edges of the field plate regions is reduced, the overall average electric field is more uniform, the dynamic resistance of the device is optimized, and the voltage resistance of the device is improved.

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