Preparation of laminated conductive film and application thereof in crystalline silicon heterojunction solar cell
By sputtering silicon films onto the surface of transparent conductive films to form multilayer conductive films, the problem of conductivity degradation of AZO films during air and heat treatment is solved, improving the stability and lifespan of crystalline silicon heterojunction solar cells and simplifying the production process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU OCEAN UNIV
- Filing Date
- 2026-03-18
- Publication Date
- 2026-06-05
AI Technical Summary
Existing transparent conductive films such as AZO are prone to conductivity degradation in air and during heat treatment, and are unstable under the action of acidic substances, affecting the performance and lifespan of crystalline silicon heterojunction solar cells.
By using magnetron sputtering technology to sputter silicon films onto the surface of transparent conductive films to form multilayer conductive films, the fabrication process is simplified and the conductivity and stability are improved.
The conductivity of the multilayer conductive film is improved during air and heat treatment, and it has good acid resistance, which improves the environmental stability and lifespan of solar cells and reduces production costs and process complexity.
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Figure CN122161204A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of solar cell technology, specifically to the preparation of a multilayer conductive film and its application in crystalline silicon heterojunction solar cells. Background Technology
[0002] Transparent conductive films have wide applications in optoelectronic fields such as displays and photovoltaics. Currently, most transparent conductive films are based on indium oxide (ITO) doped films. However, indium is a rare element, making ITO-based transparent conductive films expensive and facing sustainability challenges.
[0003] Therefore, the development of indium-free or low-indium transparent conductive films has attracted great interest. Aluminum-doped zinc oxide (AZO) is the most studied indium-free transparent conductive film, but its conductivity is relatively poor, and more importantly, its stability is poor. The conductivity of AZO is easily degraded in air and during the heat treatment of devices. This affects the application of AZO films in crystalline silicon / amorphous silicon (or nano-silicon) heterojunction solar cells.
[0004] Furthermore, during prolonged operation, the encapsulating film of solar cell modules decomposes, producing acidic substances that corrode the transparent conductive film, thus affecting the performance of the solar cell. Although existing literature reports that coating the surface of the transparent conductive film with films such as silicon oxide or silicon nitride is beneficial to improving the stability of the transparent conductive film and preventing its electrical performance from deteriorating rapidly, these films are electrically insulating materials. Therefore, these protective layers need to be prepared additionally after all cell processes (including electrode preparation), increasing process complexity and reducing production efficiency.
[0005] In the module stage, these insulating layers can also hinder the electrical contact between the interconnect strips and the cell electrodes to some extent, leading to an increase in series resistance and ultimately affecting module performance. Summary of the Invention
[0006] The purpose of this invention is to provide a method for preparing a multilayer conductive film and its application in crystalline silicon heterojunction solar cells, thereby addressing the problems mentioned in the background section. This invention utilizes magnetron sputtering technology to sequentially prepare a transparent conductive film and a silicon film, forming a multilayer conductive film. This process is highly efficient and significantly improves conductivity. The application of this multilayer conductive film in crystalline silicon heterojunction solar cells enhances the reliability of the solar cells during long-term operation of photovoltaic modules and facilitates better electrical contact between interconnect strips and cell electrodes within the module.
[0007] To achieve the above objectives, the present invention provides the following technical solution: Preparation of a multilayer conductive film, comprising the following steps: Step 1: Place a clean silicon wafer or glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level less than 3×10⁻⁶. -4 The working environment is characterized by argon or argon-oxygen mixture (oxygen content less than 5%) being introduced at a flow rate of 10 sccm to 35 sccm, with a pressure of 0.1 Pa to 1 Pa. Step 3: Sputter a transparent conductive film target onto a silicon wafer or glass substrate using DC sputtering or RF sputtering technology for 10-50 minutes at a sputtering power of 10W-150W to obtain a transparent conductive film with a thickness of 70nm-100nm covering the substrate surface. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again to create a working environment with a chamber pressure of 0.5 Pa - 1.5 Pa; Step 5: Turn on the silicon target power supply and use DC sputtering or RF sputtering technology to sputter the silicon target on the surface of the transparent conductive film. The sputtering time is 1 min to 10 min and the sputtering power is 50 W to 150 W. The surface of the transparent conductive film is covered with a silicon film to form a stacked conductive film.
[0008] As a further embodiment of the present invention, in step three, the transparent conductive film is one of the following: tin-doped indium oxide, tungsten-doped indium oxide, aluminum-doped zinc oxide, and tin oxide, or a composite film of two or more of them mixed together.
[0009] As a further embodiment of the present invention, in step three, the transparent conductive film target material includes one or two of aluminum-doped zinc oxide target material, tin-doped indium oxide target material, tungsten-doped indium oxide target material, and tin oxide target material.
[0010] As a further embodiment of the present invention, in step five, the silicon film is a doped silicon film or an intrinsic silicon film with conductive properties.
[0011] As a further embodiment of the present invention, in step five, the silicon film is amorphous or nanocrystalline, and the thickness of the silicon film is 5-20 nm.
[0012] As a further embodiment of the present invention, in step five, the sheet resistance of the stacked conductive film is 40-500Ω / □.
[0013] As a further embodiment of the present invention, the application of the stacked conductive film in a crystalline silicon heterojunction solar cell, wherein the solar cell substrate is a crystalline silicon substrate, and on one side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, a p-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outward. On the other side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, an n-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outwards.
[0014] As a further embodiment of the present invention, the p-type hydrogenated amorphous silicon film can also be a p-type hydrogenated nanocrystalline silicon film, and the n-type hydrogenated amorphous silicon can also be an n-type hydrogenated nanocrystalline silicon film.
[0015] Compared with existing technologies, the advantages of this invention are as follows: This invention involves sequentially preparing a transparent conductive film and a silicon film using magnetron sputtering technology to form a multilayer conductive film. The preparation process is simple and efficient, and the conductivity is significantly improved during air environment and heat treatment. The multilayer conductive film exhibits good heat resistance in air; after heat treatment at 100℃-400℃, the conductivity not only does not decrease but is actually improved. Furthermore, the multilayer film structure enhances the stability of the transparent conductive film in acidic substances. The structure balances ease of preparation, good acid resistance, and high heat resistance.
[0016] The preparation of the multilayer conductive film is carried out in the same equipment and the same magnetron sputtering chamber, which results in low preparation cost and real-time control of preparation parameters and forming thickness according to actual needs.
[0017] The application of multilayer conductive films in crystalline silicon heterojunction solar cells is simple in preparation and has high production efficiency. It is conducive to achieving low series resistance, high production line compatibility, and improves the environmental stability of photovoltaic modules during long-term operation. It can effectively extend the service life of solar cells and is suitable for the large-scale production of high-efficiency, long-life crystalline silicon heterojunction solar cells. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the structure of the stacked conductive film of the present invention on a glass substrate; Figure 2 This is a schematic diagram of an application structure of the stacked conductive film of the present invention in a crystalline silicon heterojunction solar cell. Detailed Implementation
[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Example 1
[0020] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: Sputter AZO target material on glass substrate using radio frequency magnetron sputtering technology. The AZO target material is aluminum-doped zinc oxide with an Al doping amount of 2wt%. Sputtering is performed for 32 minutes with a sputtering power of 100W to obtain a transparent conductive film with a thickness of 90nm covering the surface of the glass substrate. The transparent conductive film is an AZO film layer. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again to create a working environment with a chamber pressure of 1 Pa; Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target on the surface of the transparent conductive film. The sputtering time is 3 minutes and the sputtering power is 100W. The transparent conductive film is covered with a silicon film with a thickness of 10nm to form a stacked conductive film.
[0021] Please see the appendix Figure 1 A multilayer conductive film was obtained by attaching it to a glass substrate, and the sheet resistance was measured to be 338 W / □. After annealing at 250°C for 20 minutes in air, the sheet resistance decreased to 259 W / □. A multilayer conductive film was formed by covering the AZO film surface with a silicon film, thus improving conductivity. Example 2
[0022] As a comparative example of Example 1, the difference from Example 1 is that the surface of the AZO film layer is not covered with a silicon film.
[0023] An AZO film layer is formed through the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: Sputter AZO target material onto glass substrate using radio frequency magnetron sputtering technology for 32 minutes at a sputtering power of 100W to obtain a transparent conductive film with a thickness of 90nm covering the surface of the glass substrate. The transparent conductive film is an AZO film layer. An AZO film was obtained attached to a glass substrate, and its sheet resistance was measured to be 390 W / □. Then, it was annealed at 250°C for 20 minutes in an air atmosphere, and the sheet resistance after annealing was measured to be 1184 W / □. This indicates that the conductivity of the AZO film alone decreases sharply during the heat treatment process. Example 3
[0024] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4The working environment is characterized by the introduction of argon-oxygen gas at 27 sccm (oxygen content of 2.7%), with a pressure of 0.1 Pa. Step 3: ITO target material is sputtered on the glass substrate using DC magnetron sputtering technology. The ITO target material is tin-doped indium oxide target material with a tin doping amount of 3wt%. The sputtering time is 21 minutes and the sputtering power is 35W. A transparent conductive film with a thickness of 90nm is obtained covering the surface of the glass substrate. The transparent conductive film is an ITO film layer. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again at a flow rate of 35 sccm to create a working environment with a chamber pressure of 1 Pa. Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target onto the surface of the transparent conductive film. The sputtering time is 3 minutes, and the sputtering power is 100W. The transparent conductive film surface is covered with a silicon film, which is a phosphorus-doped silicon film with conductive properties. The silicon film is amorphous and 10nm thick, forming a stacked conductive film.
[0025] The sheet resistance of the multilayer conductive film was measured to be 68 W / □. After annealing at 250°C for 20 minutes in air, the sheet resistance decreased to 48 W / □. A silicon film was then deposited on the surface of the ITO film to form a multilayer conductive film, thus improving its conductivity. Example 4
[0026] As a comparative example of Example 3, the difference from Example 3 is that the surface of the ITO film layer is not covered with a silicon film.
[0027] The ITO film layer is formed through the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by the introduction of argon-oxygen gas at a flow rate of 15 sccm at 27 sccm and a pressure of 0.1 Pa. Step 3: Sputter an ITO target onto the glass substrate using DC sputtering technology. The ITO target is a tin-doped indium oxide target. Sputtering is performed for 21 minutes at a sputtering power of 35W to obtain a transparent conductive film with a thickness of 90nm covering the surface of the glass substrate. The transparent conductive film is an ITO film layer.
[0028] A pure ITO film was obtained, and its sheet resistance was measured to be 69 W / □. Then, it was annealed in air at 250°C for 20 minutes, and the sheet resistance after annealing was measured to be 246 W / □. This indicates that the conductivity of the pure ITO film is significantly reduced after annealing in air at 250°C. Example 5
[0029] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: An AZO-ITO composite film was prepared on a glass substrate using co-sputtering technology. The AZO target RF sputtering power was 100W, the ITO target DC sputtering power was 25W, the co-sputtering time was 12 minutes and 45 seconds, and the rotation speed of the turntable carrying the sample was 10 rpm. A 90nm thick AZO-ITO composite transparent conductive film was obtained covering the surface of the glass substrate. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again to create a working environment with a chamber pressure of 1 Pa; Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target onto the surface of the transparent conductive film. The sputtering time is 3 minutes, and the sputtering power is 100W. The surface of the transparent conductive film is covered with a silicon film. The silicon film thickness is 10nm, forming a multilayer conductive film.
[0030] A simple multilayer conductive film was obtained, with a sheet resistance of 258 W / □. After immersion in an acetic acid solution at pH 4 for 2 hours, the sheet resistance was measured to be 249 W / □. The AZO-ITO film surface is coated with a silicon film to form a multilayer conductive film, which helps maintain its performance stability in acidic solutions, thus contributing to the long-term reliability of the photovoltaic module. Example 6
[0031] As a comparative example of Example 5, the difference from Example 5 is that the surface of the AZO-ITO film layer is not covered with a silicon film.
[0032] The AZO-ITO film layer is formed through the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: An AZO-ITO composite film was prepared on a glass substrate using co-sputtering technology. The AZO target RF sputtering power was 100W, the ITO target DC sputtering power was 25W, the co-sputtering time was 12 minutes and 45 seconds, and the rotation speed of the turntable carrying the sample was 10 rpm. A 90nm thick AZO-ITO composite transparent conductive film was obtained covering the surface of the glass substrate. The sheet resistance of the AZO-ITO composite film was measured to be 269 W / □. After soaking in an acetic acid solution with a pH of 4 for 2 hours, the TCO was dissolved after the acetic acid treatment, and the sheet resistance could not be measured. Example 7
[0033] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: Sputter AZO target material on glass substrate using radio frequency sputtering technology. The AZO target material is aluminum-doped zinc oxide with an Al doping amount of 2wt%. Sputtering is performed for 32 minutes with a sputtering power of 100W to obtain a transparent conductive film with a thickness of 90nm covering the surface of the glass substrate. The transparent conductive film is an AZO film layer. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again at a flow rate of 35 sccm to create a working environment with a chamber pressure of 1 Pa. Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target onto the surface of the transparent conductive film. The sputtering time is 3 minutes, and the sputtering power is 100W. The surface of the transparent conductive film is covered with a silicon film. The silicon film thickness is 10nm, forming a multilayer conductive film.
[0034] The sheet resistance of this multilayer conductive film was measured to be 338 W / □. After annealing at 200°C for 20 minutes in air, the sheet resistance decreased to 291 W / □. The conductivity of the multilayer conductive film not only did not deteriorate after heat treatment at 200°C, but was actually improved. Example 8
[0035] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: An AZO-ITO composite film was prepared on a glass substrate using co-sputtering technology. The AZO target RF sputtering power was 100W, the ITO target DC sputtering power was 25W, the co-sputtering time was 12 minutes and 45 seconds, and the rotation speed of the turntable carrying the sample was 10 rpm. A 90nm thick AZO-ITO composite transparent conductive film was obtained covering the surface of the glass substrate. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again at a flow rate of 35 sccm to create a working environment with a chamber pressure of 1 Pa. Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target onto the surface of the transparent conductive film. The sputtering time is 3 minutes, and the sputtering power is 100W. The surface of the transparent conductive film is covered with a silicon film. The silicon film thickness is 10nm, forming a multilayer conductive film.
[0036] The sheet resistance of this multilayer conductive film was measured to be 238 W / □. After annealing at 200°C for 20 minutes in air, the sheet resistance was measured to be 160 W / □. This indicates that the conductivity was not only not deteriorated after heat treatment, but was actually improved. Example 9
[0037] The preparation of a multilayer conductive film includes the following steps: Step 1: Place the clean glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level of 1×10⁻⁶. -4 The working environment is characterized by argon gas being introduced at a flow rate of 35 sccm and a pressure of 0.1 Pa. Step 3: An AZO-ITO composite film was prepared on a glass substrate using co-sputtering technology. The AZO target RF sputtering power was 100W, the ITO target DC sputtering power was 25W, the co-sputtering time was 12 minutes and 45 seconds, and the rotation speed of the turntable carrying the sample was 10 rpm. A 90nm thick AZO-ITO composite transparent conductive film was obtained covering the surface of the glass substrate. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again at a flow rate of 35 sccm to create a working environment with a chamber pressure of 1 Pa. Step 5: Turn on the silicon target power supply and use radio frequency sputtering technology to sputter the silicon target onto the surface of the transparent conductive film. The sputtering time is 3 minutes, and the sputtering power is 100W. The transparent conductive film surface is covered with a silicon film, which is a doped silicon film with conductive properties. The silicon film thickness is 10nm, forming a stacked conductive film.
[0038] The sheet resistance of this multilayer conductive film was measured to be 238 W / □. After annealing at 250°C for 20 minutes in air, the sheet resistance was measured to be 155 W / □.
[0039] In step three, the transparent conductive film is a composite film made of tin-doped indium oxide and aluminum-doped zinc oxide.
[0040] In step five, the silicon film is a phosphorus-doped silicon film with conductive properties, and the silicon film is amorphous or nanocrystalline. Example 10
[0041] Please see the appendix Figure 2 The application of the stacked conductive film in crystalline silicon heterojunction solar cells, wherein the solar cell substrate is a crystalline silicon substrate, and on one side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, a p-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the crystalline silicon surface outward. On the other side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, an n-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outwards. Example 11
[0042] The application of the aforementioned stacked conductive film in a crystalline silicon heterojunction solar cell: the solar cell substrate is a crystalline silicon substrate, and on one side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, a p-type hydrogenated nanocrystalline silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the crystalline silicon surface outwards. On the other side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, an n-type hydrogenated nanocrystalline silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outwards.
[0043] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the scope of the invention. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0044] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A method for preparing a multilayer conductive film, characterized in that: Includes the following steps: Step 1: Place a clean silicon wafer or glass substrate into the magnetron sputtering chamber; Step 2: Evacuate the magnetron sputtering chamber to a vacuum level less than 3×10⁻⁶. -4 The working environment is characterized by argon or argon-oxygen mixture (oxygen content less than 5%) being introduced at a flow rate of 10 sccm to 35 sccm, with a pressure of 0.1 Pa to 1 Pa. Step 3: Sputter a transparent conductive film target onto a silicon wafer or glass substrate using DC sputtering or RF sputtering technology for 10-50 minutes at a sputtering power of 10W-150W to obtain a transparent conductive film with a thickness of 70nm-100nm covering the substrate surface. Step 4: In the same magnetron sputtering chamber, argon gas is introduced again to create a working environment with a chamber pressure of 0.5 Pa - 1.5 Pa; Step 5: Turn on the silicon target power supply and use DC sputtering or RF sputtering technology to sputter the silicon target on the surface of the transparent conductive film. The sputtering time is 1 min to 10 min and the sputtering power is 50 W to 150 W. The surface of the transparent conductive film is covered with a silicon film to form a stacked conductive film.
2. The method for preparing a multilayer conductive film according to claim 1, characterized in that: In step three, the transparent conductive film is one of the following: tin-doped indium oxide, tungsten-doped indium oxide, aluminum-doped zinc oxide, or tin oxide, or a composite film of two or more of these.
3. The method for preparing a multilayer conductive film according to claim 1, characterized in that: In step three, the transparent conductive film target material includes one or two of the following: aluminum-doped zinc oxide target material, tin-doped indium oxide target material, tungsten-doped indium oxide target material, and tin oxide target material.
4. The method for preparing a multilayer conductive film according to claim 1, characterized in that: In step five, the silicon film is a doped silicon film or an intrinsic silicon film with conductive properties.
5. The method for preparing a multilayer conductive film according to claim 4, characterized in that: In step five, the silicon film is amorphous or nanocrystalline, and the thickness of the silicon film is 5-20 nm.
6. The method for preparing a multilayer conductive film according to claim 1, characterized in that: In step five, the sheet resistance of the stacked conductive film is 40-500 Ω / □.
7. The application of the stacked conductive film according to any one of claims 1-6 in a crystalline silicon heterojunction solar cell, characterized in that: The solar cell substrate is a crystalline silicon substrate. On one side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, a p-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outwards. On the other side of the crystalline silicon substrate, an intrinsic hydrogenated amorphous silicon film, an n-type hydrogenated amorphous silicon film, a transparent conductive film, a silicon film, and a silver electrode are deposited sequentially from the surface of the crystalline silicon outwards.
8. The application of the stacked conductive film according to claim 7 in a crystalline silicon heterojunction solar cell, characterized in that: The p-type hydrogenated amorphous silicon film can also be a p-type hydrogenated nanocrystalline silicon film, and the n-type hydrogenated amorphous silicon can also be an n-type hydrogenated nanocrystalline silicon film.