Light emitting diode package structure

Abstract

A light emitting diode package structure is disclosed. The light emitting diode package structure includes a light emitting diode chip, a wavelength conversion layer, a dielectric layer, a distributed Bragg reflector, a conductive member and a reflective layer. The light emitting diode chip includes a light emitting surface and a plurality of side surfaces. The wavelength conversion layer is disposed on the light emitting surface of the light emitting diode chip, and the wavelength conversion layer includes a plurality of side surfaces. The dielectric layer covers the side surfaces of the light emitting diode chip, and the distributed Bragg reflector is disposed under the light emitting diode chip. The conductive member is disposed under the distributed Bragg reflector and electrically connected to the light emitting diode chip through the distributed Bragg reflector, and the reflective layer is disposed on the side surfaces of the wavelength conversion layer.

Description

Technical Field

[0001] This invention relates to light-emitting diode (LED) packaging structures, and particularly to LED packaging structures including a reflective layer. Background Technology

[0002] Light-emitting devices include light-emitting elements arranged in various ways. However, light-emitting elements may be excited by adjacent light-emitting elements, causing crosstalk between them. This makes it difficult to control the light emitted by the desired light-emitting elements in the device. Additionally, there may be a problem of light leakage due to excessive lateral emission from the light-emitting elements. Summary of the Invention

[0003] The light-emitting diode (LED) package structure of the present invention includes an LED chip, a wavelength conversion layer, a dielectric layer, a dispersed Bragg reflector layer, a conductive element, and a reflective layer. The LED chip includes a light-emitting surface and multiple side surfaces. The wavelength conversion layer is disposed on the light-emitting surface of the LED chip and includes multiple side surfaces. The dielectric layer covers the side surfaces of the LED chip, and the dispersed Bragg reflector layer is disposed beneath the LED chip. The conductive element is disposed beneath the dispersed Bragg reflector layer and passes through the dispersed Bragg reflector layer to be electrically connected to the LED chip. The reflective layer is disposed on the side surface of the wavelength conversion layer.

[0004] The LED packaging structure of this invention can be applied to various types of electronic devices. To make the features and advantages of this invention more apparent and understandable, various embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0005] The following detailed description, in conjunction with the accompanying drawings, will provide a better understanding of the embodiments of the present invention. It is worth noting that, according to industry standard practice, some features may not be drawn to scale. In fact, for clarity of description, the dimensions of different features may be increased or decreased.

[0006] Figure 1 This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention;

[0007] Figures 2 to 19 These are some embodiments of the present invention, showing cross-sectional schematic diagrams of the light-emitting diode package structure at various stages of the forming method;

[0008] Figure 20 This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention;

[0009] Figure 21This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention;

[0010] Figure 22 This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention;

[0011] Figure 23 This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention.

[0012] Symbol explanation:

[0013] 1, 2, 3, 4, 5: Light Emitting Diode Package Structure

[0014] 10: First substrate

[0015] 20: Second substrate

[0016] 11: First peeling layer

[0017] 12A: First adhesive layer

[0018] 12B: Second adhesive layer

[0019] 12C: Third adhesive layer

[0020] 13: Light Emitting Diode Chip

[0021] 13A: Light-emitting surface

[0022] 13B: Electrode surface

[0023] 13C: Side surface

[0024] 130: Electrode

[0025] 14: Dielectric layer

[0026] 14T, 16T, 21T, 32T, 40T, 50T, 90T: Top surface

[0027] 14S: Inner surface

[0028] 14M: Second Surface

[0029] 14A, 16A: Outer surface

[0030] 16: Distributed Bragg reflector

[0031] 21: Mask layer

[0032] 30, 32: Reflective layer

[0033] 31: Upper reflective layer

[0034] 32A, 40A, 50A: Outer surface

[0035] 40: Filler material layer

[0036] 50: Protective layer

[0037] 50I: Inner surface

[0038] 16B, 32B, 50B, 90B: Lower surface

[0039] 70: Conductive components

[0040] 80: Conductive pad

[0041] 90: Wavelength conversion layer

[0042] 90S: Side surface

[0043] First surface: 40F, 70F

[0044] D1: First Direction

[0045] D2: Second Direction Detailed Implementation

[0046] The following provides a detailed description of the packaging structures of various embodiments of the present invention. It should be understood that the following description provides many different embodiments for implementing some embodiments of the present invention. The specific elements and arrangements described below are merely for simple and clear description of some embodiments of the present invention. Of course, these are merely examples and not for limiting the present invention. Furthermore, similar and / or corresponding element symbols may be used in different embodiments to identify similar and / or corresponding elements in order to clearly describe the present invention. However, the use of these similar and / or corresponding element symbols is only for simple and clear description of some embodiments of the present invention and does not represent any association between the different embodiments and / or structures discussed.

[0047] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in various embodiments to describe the relative relationship of one element to another in the figures. It is understood that if the apparatus in the figures is flipped upside down, the element described as being on the "lower" side will become the element on the "higher" side. Embodiments of the invention may be used in conjunction with the accompanying drawings. Figure 1It is understood that the accompanying drawings of this invention are also considered part of the disclosure. Furthermore, when referring to a first element being on or over a second element, this may include situations where the first and second elements are in direct contact, or situations where they are not in direct contact, i.e., where one or more other elements may be spaced between them. However, if the first element is directly on the second element, it indicates that the first and second elements are in direct contact. Moreover, it should be understood that the ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify elements, are not intended to imply any prior ordinal number for that (or those) element, nor to represent the order of one element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish an element with a given name from another element with the same name. The claims and specification may not use the same terminology; for example, a first element in the specification may be a second element in a claim.

[0048] In this document, the terms "approximately," "about," and "substantially" generally indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantities are approximate, meaning that the terms "approximately," "about," or "substantially" are implied even without specific mention. The phrases "the range is between the first and second values" or "the first value ~ the second value" indicate that the range includes the first value, the second value, and other values ​​in between. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10%, 5%, 3%, 2%, 1%, or 0.5% between the first and second values. If the first direction is perpendicular to the second direction, the angle between the first and second directions can be between 80 and 100 degrees. If the first direction is parallel to the second direction, the angle between the first and second directions can be between 0 and 10 degrees.

[0049] In this invention, the directions are not limited to the three axes of a Cartesian coordinate system such as the X-axis, Y-axis, and Z-axis, and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other, but are not limited thereto. For ease of explanation, in the following text, the X-axis direction is the first direction D1 (width direction), the Y-axis direction is the second direction D2 (length direction), and the Z-axis direction is the third direction D3 (thickness or depth direction). In some embodiments, the top view described herein is a cross-sectional view of the XY plane, and the cross-sectional view described herein is a cross-sectional view of the XZ plane. In some embodiments, the third direction D3 may be the normal direction of the light-emitting element. In some embodiments, the phrase "a gap between one element and another element" means that the gap exists between the first boundary of one element and the second boundary of another element, and the second boundary may be the boundary closest to the first boundary.

[0050] refer to Figure 1 This is a cross-sectional schematic diagram of the light-emitting diode package structure according to some embodiments of the present invention. For example... Figure 1 As shown, a light-emitting diode (LED) package structure 1 includes an LED chip 13, a wavelength conversion layer 90, a dielectric layer 14, a distributed Bragg reflection (DBR) layer 16, a conductive element 70, and a reflective layer 32.

[0051] like Figure 1 As shown, in some embodiments, the light-emitting diode chip 13 includes a light-emitting surface 13A, an electrode surface 13B, a plurality of side surfaces 13C, and an electrode 130. The electrode surface 13B and the light-emitting surface 13A are opposite to each other, and the side surfaces 13C are located between the electrode surface 13B and the light-emitting surface 13A. In some embodiments, the light-emitting diode chip 13 does not have a growth substrate.

[0052] like Figure 1 As shown, in some embodiments, a wavelength conversion layer 90 is disposed on the light-emitting surface 13A of the light-emitting diode chip 13, and the wavelength conversion layer 90 includes an upper surface 90T and a plurality of side surfaces 90S. In some embodiments, a third adhesive layer 12C is provided between the wavelength conversion layer 90 and the light-emitting surface 13A of the light-emitting diode chip 13. That is, the wavelength conversion layer 90 can be attached to the light-emitting surface 13A of the light-emitting diode chip 13 through the third adhesive layer 12C.

[0053] like Figure 1As shown, in some embodiments, a dielectric layer 14 covers the side surface 13C of the light-emitting diode chip 13, and the dielectric layer 14 is disposed on the dispersed Bragg reflector layer 16. In some embodiments, the dielectric layer 14 surrounds the side surface 13C of the light-emitting diode chip 13. In some embodiments, the dispersed Bragg reflector layer 16 is disposed under the light-emitting diode chip 13, and the electrode surface 13B of the light-emitting diode chip 13 contacts the dispersed Bragg reflector layer 16.

[0054] like Figure 1 As shown, in some embodiments, the conductive element 70 is disposed under the dispersed Bragg reflector layer 16 and passes through the dispersed Bragg reflector layer 16 to be electrically connected to the electrodes 130 of the light-emitting diode chip 13, wherein the conductive element 70 may be a metal pillar.

[0055] like Figure 1 As shown, in some embodiments, the reflective layer 32 is disposed on the side surface 90S of the wavelength conversion layer 90. In some embodiments, the reflective layer 32 may be L-shaped and inverse L-shaped.

[0056] like Figure 1 As shown, in some embodiments, the light-emitting diode package structure 1 further includes a protective layer 50 disposed on the reflective layer 32. In some embodiments, the protective layer 50 has an upper surface 50T, an inner surface 50I, a lower surface 50B, and an outer surface 50A, wherein the reflective layer 32 is disposed on the lower surface 50B and the inner surface 50I of the protective layer 50, and exposes the upper surface 50T and the outer surface 50A of the protective layer 50. The protective layer 50 can protect the reflective layer 32 and prevent the reflective layer 32 from being damaged by external impact.

[0057] like Figure 1 As shown, in some embodiments, the light-emitting diode package structure 1 further includes a filler material layer 40 disposed under the dispersed Bragg reflector layer 16 and surrounding the conductive element 70.

[0058] like Figure 1 As shown, the light-emitting diode (LED) package structure 1 further includes a conductive pad 80. In some embodiments, the conductive pad 80 is electrically connected to the conductive element 70. In some embodiments, the conductive pad 80 is made of a conductive material. In some embodiments, the conductive pad 80 is electrically connected to an external circuit outside the LED package structure 1. Therefore, external current can be applied to the LED chip 13 via the conductive pad 80, the conductive element 70, and the electrode 130. In some embodiments, the LED package structure 1 is a cube or cuboid.

[0059] Reference Figures 2 to 19These are cross-sectional schematic diagrams of the light-emitting diode package structure 1 at various stages of the forming method, according to some embodiments of the present invention.

[0060] like Figure 2 As shown, a first substrate 10 is provided. In some embodiments, the first substrate 10 may be or may include: group III-V compounds, such as gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), aluminum nitride (AlN), and aluminum gallium nitride (AlGaN); group IV elements or group IV compounds, such as silicon (Si), silicon carbide (SiC), and diamond (C); other suitable materials; or combinations thereof, but the invention is not limited thereto. In some embodiments, the first substrate 10 may be or may include glass, quartz, sapphire, ceramic, other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the first substrate 10 may be or may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the first substrate 10 may be or may include a flexible substrate, a rigid substrate, or a combination thereof, but the invention is not limited thereto. For example, the first substrate 10 may be a sapphire substrate. In some embodiments, the first substrate 10 may be or may include a light-transmitting substrate, a semi-light-transmitting substrate, or an opaque substrate, but the invention is not limited thereto.

[0061] like Figure 2 As shown, following the steps described above, a first debond layer 11 is formed on the first substrate 10. In some embodiments, the first debond layer 11 may be or may include laser-release adhesive, UV-release adhesive, thermal-release adhesive, other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the first debond layer 11 completely covers the upper surface of the first substrate 10, but the invention is not limited thereto. In other embodiments, the first debond layer 11 may partially cover the upper surface of the first substrate 10. For example, the first debond layer 11 may partially cover the upper surface of the first substrate 10 corresponding to the position of the light-emitting diode chip 13 to be subsequently formed.

[0062] like Figure 2 As shown, in some embodiments, multiple light-emitting diode chips 13 are arranged side-by-side on a first release layer 11 on a first substrate 10. It is worth noting that, in this invention, for clarity, Figure 2Only one light-emitting diode (LED) chip 13 is fabricated on the first release layer 11 of the first substrate 10. In some embodiments, the LED chip 13 may be or may include a thin-film flip-chip LED or a flip-chip LED. A thin-film flip-chip LED is an LED chip 13 without a growth substrate, meaning the LED chip 13 does not have a growth substrate.

[0063] In some embodiments, LED chips 13 are first disposed on an adhesive layer of a temporary substrate (not shown), and the adhesive layer and the temporary substrate thereon are removed by a laser transfer process or a similar process, thereby transferring multiple LED chips 13 onto a first release layer 11. However, the present invention is not limited thereto. In some embodiments, LED chips 13 can be transferred onto the first release layer 11 by a pick-up process.

[0064] Continue to refer to Figure 2 In some embodiments, a first adhesive layer 12A may be provided between the light-emitting diode chip 13 and the first release layer 11. In some embodiments, the first adhesive layer 12A may be first provided on the first release layer 11, and the light-emitting diode chip 13 may be attached to the first adhesive layer 12A. In some embodiments, alternatively, the first adhesive layer 12A may be first provided on the light-emitting diode chip 13, and the light-emitting diode chip 13 may be transferred to the first release layer 11 together with the first adhesive layer 12A.

[0065] In some embodiments, the first adhesive layer 12A may be or may include polyimide (PI), polybenzoxazole (PBO), epoxy resin, transparent silicone resin, other suitable materials or combinations thereof, but the invention is not limited thereto.

[0066] Continue to refer to Figure 2 In some embodiments, the light-emitting diode chip 13 has a light-emitting surface 13A, an electrode surface 13B, and a plurality of side surfaces 13C. The electrode surface 13B and the light-emitting surface 13A are opposite to each other, and the plurality of side surfaces 13C are located between the electrode surface 13B and the light-emitting surface 13A. Here, the electrode surface 13B refers to the surface of the light-emitting diode chip 13 itself used to mount the electrode 130, and not the surface of the electrode 130 itself. The light-emitting surface 13A is configured to generate a light source. Figure 2As shown, the light-emitting surface 13A of the light-emitting diode chip 13 faces the first substrate 10, while the electrode surface 13B faces away from the first substrate 10. That is, the light-emitting surface 13A of the light-emitting diode chip 13 faces and contacts the first adhesive layer 12A.

[0067] like Figure 3 As shown, following the above steps, a dielectric layer 14 is disposed on the side surface 13C of the light-emitting diode chip 13. The dielectric layer 14 directly contacts the side surface 13C of the light-emitting diode chip 13 and exposes the electrodes 130 and electrode surfaces 13B of the light-emitting diode chip 13; that is, the dielectric layer 14 covers the side surface of the light-emitting diode chip. In some embodiments, the dielectric layer 14 continuously and uninterruptedly surrounds the side surface 13C of the light-emitting diode chip 13. The dielectric layer 14 may be or may include epoxy resin, polyimide (PI), polybenzoxazole (PBO), silicone, silicon dioxide, or silicon nitride. In some embodiments, the dielectric layer 14 may be an insulating dielectric material.

[0068] like Figure 4 As shown, following the steps described above, a dispersed Bragg reflector layer 16 is formed on the dielectric layer 14, the electrode surface 13B, and the electrode 130, exposing a portion of the surface of the electrode 130. In some embodiments, the dispersed Bragg reflector layer 16 can be patterned to form openings in the dispersed Bragg reflector layer 16, exposing a portion of the surface of the electrode 130. In some embodiments, the dispersed Bragg reflector layer 16 comprises thin films of two or more homogeneous or heterogeneous materials with different refractive indices stacked together. For example, the dispersed Bragg reflector layer 16 may be composed of alternating stacks of silicon dioxide (SiO2) and titanium dioxide (TiO2), alternating stacks of silicon dioxide (SiO2) / alumina (Al2O3) / titanium dioxide (TiO2), or alternating stacks of titanium dioxide (TiO2) / silicon dioxide (SiO2) / tantalum pentoxide (Ta2O5).

[0069] In some embodiments, the dispersed Bragg reflector layer 16 is formed using deposition processes such as vapor deposition, atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), as well as subsequent patterning processes.

[0070] like Figure 5As shown, following the above steps, a plurality of conductive elements 70 are disposed on the dispersed Bragg reflector layer 16, wherein the conductive elements 70 pass through the openings of the dispersed Bragg reflector layer 16 and are electrically connected to the electrodes 130 on the electrode surface 13B. In some embodiments, the conductive elements 70 are metal pillars. It is worth noting that using conductive elements 70 can significantly increase the thickness and volume of the metal layer, which greatly benefits the heat dissipation, stress relief, current distribution, pressure buffering during subsequent die bonding, and improvement of device life of the light-emitting diode chip 13.

[0071] In some embodiments, the conductive element 70 is formed using methods such as electroplating, vapor deposition, screen printing, and vacuum spraying. In some embodiments, the thickness of the conductive element 70 is between 5 μm and 200 μm. In some embodiments, the conductive element 70 may be or may include a conductive material. For example, the conductive material may include metals, metal compounds, other suitable conductive materials, or combinations thereof, but the present invention is not limited thereto. For example, the metal may be copper (Cu), tin (Sn), silver (Ag), gold (Au), nickel (Ni), indium (In), platinum (Pt), titanium (Ti), magnesium (Mg), zinc (Zn), germanium (Ge), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), molybdenum (Mo), or alloys thereof. For example, the metal compound may be tantalum nitride (TaN), titanium nitride (TiN), tungsten silicide (WSi2), indium tin oxide (ITO), etc., but the present invention is not limited thereto.

[0072] like Figure 6 As shown, following the above steps, a filling material layer 40 is disposed on the dispersed Bragg reflector layer 16, wherein the filling material layer 40 surrounds and covers the conductive element 70.

[0073] In some embodiments, the filler layer 40 may be or may include polyimide (PI), epoxy resin, silicone resin, other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the light transmittance of the filler layer 40 may be less than 10% by adding black dispersed particles such as carbon black to the filler layer 40, thereby making the filler layer 40 appear black.

[0074] In some embodiments, the filler layer 40 includes diffused particles. In some embodiments, the diffused particles include silicon dioxide (SiO2), titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), boron oxide (BN), or zirconium dioxide (ZrO2). In some embodiments, the diffused particles include hollow silicon dioxide (SiO2) or solid silicon dioxide (SiO2). In some embodiments, the filler layer 40 contains two or more different sizes of diffused particles. For example, the filler layer 40 contains two, three, four, or five or more different sizes of diffused particles. In some embodiments, the diffused particles may be elongated or spherical. In some embodiments, the filler layer 40 contains two or more spherical diffused particles with different radii.

[0075] like Figure 7 As shown, following the steps described above, a portion of the filler material layer 40 is removed to expose the first surface 70F of the conductive element 70. For example, the filler material layer 40 can be removed by chemical mechanical polishing, etching, other suitable methods, or combinations thereof, but the invention is not limited thereto. In some embodiments, after exposing the first surface 70F of the conductive element 70, the first surface 40F of the filler material layer 40 is coplanar with the first surface 70F of the conductive element 70.

[0076] like Figure 8 As shown, following the above steps, a conductive pad 80 is disposed on the conductive element 70, and the conductive pad 80 is electrically connected to the conductive element 70. In some embodiments, the upper surface of the conductive pad 80 is not coplanar with the first surface 40F of the filling material layer 40.

[0077] In some embodiments, the conductive pad 80 covers the conductive element 70 and a portion of the filler material layer 40 in the vertical direction. In other words, in a top-view orientation, the conductive pad 80 overlaps with and directly contacts the conductive element 70, and the ends or peripheries of the conductive pad 80 overlap with and directly contact a portion of the filler material layer 40. In some embodiments, the top-view area of ​​the conductive pad 80 may be larger than the top-view area of ​​the conductive element 70. Thus, in a top-view orientation, the conductive pad 80 can completely overlap with and directly contact the conductive element 70, and both ends or the entire periphery of the conductive pad 80 overlap with and directly contact a portion of the filler material layer 40.

[0078] In some embodiments, the conductive pads 80 may have the same shape. In some embodiments, the conductive pads 80 may have different shapes. In some embodiments, the conductive pads 80 are square. In some embodiments, the conductive pads 80 are square with a triangular notch.

[0079] In some embodiments, the conductive pad 80 may be or may include a conductive material. For example, the conductive material may include metals, metal compounds, other suitable conductive materials, or combinations thereof, but the invention is not limited thereto. For example, the metal may be copper (Cu), tin (Sn), platinum (Pt), titanium (Ti), aluminum (Al), molybdenum (Mo), titanium (Ti), magnesium (Mg), palladium (Pd), iridium (Ir), gold (Au), silver (Ag), nickel (Ni), indium (In), chromium (Cr), tungsten (W), zinc (Zn), germanium (Ge), or alloys thereof. In some embodiments, the metal compound may be indium tin oxide (ITO), tantalum nitride (TaN), tungsten silicide (WSi2), titanium nitride (TiN), etc.

[0080] like Figure 9 As shown, following the above steps, the second substrate 20 is first bonded to the conductive element 70 and the conductive pad 80, and the first substrate 10 is flipped over. In some embodiments, the second adhesive layer 12B is disposed on the second substrate 20 and bonded to the conductive element 70 and the conductive pad 80, that is, the conductive pad 80 faces the second adhesive layer 12B and contacts the second adhesive layer 12B.

[0081] In some embodiments, the second substrate 20 may be or may include: group IV elements or group IV compounds, such as silicon (Si), silicon carbide (SiC), diamond (C); group III-V compounds, such as gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), aluminum nitride (AlN), aluminum gallium nitride (AlGaN); other suitable materials; or combinations thereof, but the invention is not limited thereto. In some embodiments, the second substrate 20 may be or may include sapphire, glass, quartz, ceramic, other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the second substrate 20 may be or may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but the invention is not limited thereto. In some embodiments, the second substrate 20 may be or may include a flexible substrate, a rigid substrate, or combinations thereof, but the invention is not limited thereto. For example, the second substrate 20 may be a sapphire substrate. In some embodiments, the second substrate 20 may be or may include a light-transmitting substrate, a semi-light-transmitting substrate, or an opaque substrate, but the present invention is not limited thereto.

[0082] In some embodiments, the second adhesive layer 12B may be or may include polyimide (PI), polybenzoxazole (PBO), epoxy resin, transparent silicone resin, other suitable materials or combinations thereof, but the invention is not limited thereto.

[0083] like Figure 9 As shown, the first substrate 10 is removed. For example, depending on the type of the first release layer 11, the first release layer 11 can be de-adhesive by means of heating, laser, UV light, etc., so as to remove the first substrate 10 thereon.

[0084] like Figure 10 As shown, following the steps described above, the first adhesive layer 12A and the first release layer 11 on the light-emitting surface 13A and the dielectric layer 14 of the light-emitting diode chip 13 are removed to expose the light-emitting surface 13A of the light-emitting diode chip 13. For example, the first adhesive layer 12A and the first release layer 11 can be removed by a removal fabrication process such as etching, polishing, other suitable methods, or combinations thereof.

[0085] Continue to refer to Figure 10 After removing the first adhesive layer 12A and the first release layer 11, the upper surface 14T of the dielectric layer 14 can be coplanar with the light-emitting surface 13A, but the present invention is not limited thereto. In some embodiments, the dielectric layer 14 continuously surrounds the side surface 13C of the light-emitting diode chip 13. Before the aforementioned fabrication process of removing the first adhesive layer 12A and the first release layer 11, the dielectric layer 14 prevents the light-emitting diode chip 13 from falling off. Furthermore, after the fabrication process of removing the first adhesive layer 12A and the first release layer 11, the dielectric layer 14 fixes the light-emitting diode chip 13 in the light-emitting diode package structure 1.

[0086] like Figure 11 As shown, following the above steps, a third adhesive layer 12C is disposed on the light-emitting surface 13A of the light-emitting diode chip 13 and the upper surface 14T of the dielectric layer 14. In some embodiments, the third adhesive layer 12C may be silicone, epoxy resin, polyimide (PI), polybenzoxazole (PBO), other suitable materials, or combinations thereof, but the present invention is not limited thereto. In some embodiments, the third adhesive layer 12C may be a light-transmitting material.

[0087] refer to Figure 12Following the steps described above, the wavelength conversion layer 90 is disposed on the third adhesive layer 12C. In some embodiments, the wavelength conversion layer 90 may be phosphor-in-glass (PIG), for example, a phosphor is disposed within the glass to avoid thermal quenching of fluorescence, such as with phosphor powder. In some embodiments, the wavelength conversion layer 90 may be a phosphor mixture colloid, which may be silicone resin, forming a phosphor sheet. In some embodiments, the wavelength conversion layer 90 is disposed on the third adhesive layer 12C on the light-emitting diode chip 13 to bond the wavelength conversion layer 90 to the light-emitting diode chip 13 via the third adhesive layer 12C. In some embodiments, the wavelength conversion layer 90 may be placed on the light-emitting surface 13A of the light-emitting diode chip 13 without the need for bonding using the third adhesive layer 12C (not shown). In some embodiments, the wavelength conversion layer 90 may include a red light conversion material, a blue light conversion material, a green light conversion material, a yellow light conversion material, other suitable light conversion materials, or combinations thereof. In some embodiments, the red light conversion material may include red quantum dots or red phosphors, but the invention is not limited thereto. For example, the red light conversion material may include (Sr,Ca)AlSiN3:Eu 2+ Ca2Si5N8:Eu 2+ Sr(LiAl3N4):Eu 2+ The invention may include manganese-doped red fluoride phosphors, their analogues, or combinations thereof, but is not limited thereto. The manganese-doped red fluoride phosphor may include K2GeF6:Mn 4+ K2SiF6:Mn 4+ K2TiF6:Mn 4+ The invention may include, but is not limited to, analogues or combinations thereof. In some embodiments, the blue light conversion material may include blue quantum dots or blue phosphors, but the invention is not limited to these. In some embodiments, the green light conversion material may include green quantum dots or green phosphors, but the invention is not limited to these. For example, the green light conversion material may include lumbrotite (LuAG) phosphor, yttrium aluminum garnet (YAG) phosphor, β-SiAlON phosphor, silicate phosphor, analogues, or combinations thereof, but the invention is not limited to these. In some embodiments, the yellow light conversion material may include yellow quantum dots or yellow phosphors. For example, the yellow light conversion material may include yttrium aluminum garnet (YAG) phosphor.

[0088] In some embodiments, the light-emitting diode chip 13 may emit blue light, and the wavelength conversion layer 90 may include a yellow light-converting material. For example, the yellow light-converting material may be yttrium aluminum garnet (YAG) phosphor. Therefore, the light emitted by the light-emitting diode chip 13 may become white light after passing through the wavelength conversion layer 90. In some embodiments, the light-emitting diode chip 13 may emit blue light, and the wavelength conversion layer 90 may include a combination of green and red light-converting materials. For example, the wavelength conversion layer 90 may include green cyronitrile phosphor and red K₂SiF₆:Mn. 4+ Therefore, the light emitted by the LED chip 13 can become white light after passing through the wavelength conversion layer 90. In some embodiments, the wavelength conversion layer 90 may include a combination of green phosphor and two red phosphors, wherein, for example, the wavelength conversion layer 90 may include green silane phosphor and red K2SiF6:Mn. 4+ With red (Sr,Ca)AlSiN3:Eu 2+ In some embodiments, the wavelength conversion layer 90 may include red quantum dots and green quantum dots.

[0089] like Figure 13 As shown, following the steps described above, in some embodiments, a mask layer 21 is disposed on the wavelength conversion layer 90. In some embodiments, the mask layer 21 may be formed by spin coating, other suitable fabrication processes, or a combination thereof, but the invention is not limited thereto. In some embodiments, the mask layer 21 includes a photoresist, but the invention is not limited thereto.

[0090] like Figure 14 As shown, following the above steps, a cutting and manufacturing process is performed, using mask layer 21 as a protective layer for a group (e.g., Figure 13 The mask layer 21 between one set of LED chips 13 and another set of LED chips 13 (not shown), the wavelength conversion layer 90 beneath it, and the dielectric layer 14 beneath the wavelength conversion layer 90 are cut until the dielectric layer 14 is reached. In some embodiments, the cutting process between the two sets of LED chips 13 can be performed using tools such as cutting tools, lasers, plasma dicing, other suitable methods or tools, or combinations thereof. For example, the cutting tool can be a diamond cutting tool.

[0091] like Figure 15As shown, following the above steps, a reflective layer 30 is formed on the side surface 90S of the wavelength conversion layer 90 and the upper surface 21T of the mask layer 21. In some embodiments, the reflective layer 30 can be formed by sputtering, electron beam evaporation, electroplating, chemical vapor deposition, resistance heating evaporation, other suitable formation processes, or combinations thereof, but the present invention is not limited thereto. In some embodiments, the reflective layer 30 can be formed by blanket deposition. In some embodiments, the reflective layer 30 has an upper reflective layer 31 and a reflective layer 32.

[0092] In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may include a reflective material. For example, the reflective material may include titanium (Ti), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), alloys thereof, the like, or combinations thereof, but the invention is not limited thereto. In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may include aluminum (Al), or the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may be aluminum (Al) and substantially exclude copper (Cu). In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may include an aluminum-copper alloy (AlCu), and the weight of copper in the aluminum-copper alloy accounts for 0.1% to 20% of the total weight of the aluminum-copper alloy. In some embodiments, the aluminum-copper alloy may include 0.1% to 20% copper and 80% to 99.9% aluminum, respectively, according to the total weight of the aluminum-copper alloy. For example, the weight of copper in the aluminum-copper alloy may be 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 10%, 15%, 20% of the total weight of the aluminum-copper alloy, or any value or range of values ​​between the foregoing values, but the invention is not limited thereto. For example, the weight of copper in the aluminum-copper alloy may be 0.1% to 0.5% of the total weight of the aluminum-copper alloy. When the weight of copper is too high, the reflectivity of the aluminum-copper alloy is insufficient. In other embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may comprise an aluminum-copper alloy (AlCu), and the number of copper atoms in the aluminum-copper alloy may be 0.1% to 20% of the total number of atoms in the aluminum-copper alloy; or the mass of copper in the aluminum-copper alloy may be 0.1% to 20% of the total mass of the aluminum-copper alloy; or the volume of copper in the aluminum-copper alloy may be 0.1% to 20% of the total volume of the aluminum-copper alloy.

[0093] In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may include a dispersed Bragg mirror. In some embodiments, the dispersed Bragg mirror may be formed on the side surface 90S of the wavelength conversion layer 90 using atomic layer deposition (ALD).

[0094] like Figure 16As shown, following the above steps, a removal fabrication process is performed to remove the upper reflective layer 31 and the mask layer 21 of the reflective layer 30, forming a reflective layer 32, thereby exposing the upper surface 90T of the wavelength conversion layer 90. In some embodiments, the removal fabrication process may involve immersing in a photoresist remover solution or rinsing off the photoresist solution, i.e., the mask layer 21 and the upper reflective layer 31 are removed by the photoresist remover solution, leaving the reflective layer 32. In some embodiments, the reflective layer 32 is disposed on the side surface 90S of the wavelength conversion layer 90, the inner surface 14S of the dielectric layer 14, and the second surface 14M of the dielectric layer 14. Accordingly, the reflective layer 32 can improve the luminous efficiency of the light-emitting element 10.

[0095] like Figure 16 As shown, in the first direction D1, the reflective layer 32 on the side surface 90S of the wavelength conversion layer 90 may have a thickness t1. In some embodiments, the thickness t1 may be greater than 500 Å. However, the invention is not limited thereto. In some embodiments, the thickness t1 may be 0.05 μm to 10 μm. For example, the thickness t1 may be 0.05 μm, 0.08 μm, 0.1 μm, 0.3 μm, 0.7 μm, 1 μm, 3 μm, 5 μm, 7 μm, 9 μm, or 10 μm. In some embodiments, when the thickness t1 of the reflective layer 32 is too thin, it is difficult to effectively reflect the light emitted from the light-emitting diode chip 13. When the thickness t1 of the reflective layer 32 is too thick, the volume of the reflective layer 32 becomes too large. In some embodiments, the thickness t1 gradually increases along the second direction D2. In some embodiments, the thickness t1 gradually increases along the second direction D2, that is, it is thinner closer to the dielectric layer 14 and thicker closer to the upper surface 90T of the wavelength conversion layer 90.

[0096] like Figure 16 As shown, in some embodiments, after the removal fabrication process, the reflective layer 32 can be L-shaped or an inverted L-shaped. The reflective layer 32 can prevent the light emitted by the light-emitting diode chip 13 from leaking from the side surface 13C of the light-emitting diode chip 13 to the side surface 90S of the wavelength conversion layer 90. Furthermore, the reflective layer 32 can prevent the light emitted by one light-emitting diode chip 13 from interfering with the light-emitting diode chip 13 of another light-emitting diode package structure 1, that is, the reflective layer 32 can prevent crosstalk between the light-emitting diode chips 13 of each light-emitting diode package structure 1.

[0097] Following the steps described above, a protective layer 50 is formed on the reflective layer 32. After forming the protective layer 50 on the upper surface 90T of the wavelength conversion layer 90 and the reflective layer 32, the protective layer 50 on the upper surface 90T of the wavelength conversion layer 90 is then removed. Finally, as... Figure 17As shown, a protective layer 50 is disposed on the reflective layer 32. In some embodiments, the upper surface 50T of the protective layer 50, the upper surface 90T of the wavelength conversion layer 90, and the upper surface 32T of the reflective layer 32 are coplanar. In some embodiments, the protective layer 50 is formed by a molding process. In some embodiments, the protective layer 50 may include epoxy resin, polyimide (PI), or silicone resin. In some embodiments, the protective layer 50 may further include fillers. In some embodiments, the fillers include titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), boron oxide (BN), aluminum oxide (Al2O3), or zirconium dioxide (ZrO2). In some embodiments, the fillers include hollow silicon dioxide (SiO2) or solid silicon dioxide (SiO2). In some embodiments, the protective layer 50 includes two or more different sizes of fillers. For example, the protective layer 50 includes two, three, four, or five or more different sizes of diffusing particles. In some embodiments, the diffusing particles may be spherical or elongated. In some embodiments, the protective layer 50 includes two or more spherical diffusing particles of different radii.

[0098] In some embodiments, the step of forming the protective layer 50 may be omitted. That is, the light-emitting diode package structure 1 may not include the protective layer 50 and can continue with subsequent fabrication processes. Omitting the step of forming the protective layer 50 can save manufacturing costs and utilize the reflective layer 32 to avoid crosstalk problems between the light-emitting diode chips 13. In some embodiments, the light-emitting diode package structure 1 may not include the protective layer 50. Viewed from the cross-sectional direction, the reflective layer 32 may be L-shaped, an inverted L-shaped, square, or rectangular.

[0099] Please refer to Figure 18 In some embodiments, the second substrate 20 and the second adhesive layer 12B are removed. For example, depending on the type of the second adhesive layer 12B, its adhesiveness can be lost by methods such as heating, UV light, laser, or laser lift-off, thereby removing the second substrate 20. Then, the second adhesive layer 12B can be removed by physical or chemical methods. It is worth noting that the second adhesive layer 12B and the second substrate 20 can also be removed simultaneously in the same step using a suitable fabrication process, and are not limited to the methods described above.

[0100] Please refer to Figure 19 For a set (e.g., Figure 18The protective layer 50 between one (shown) LED chip 13 and another (not shown) LED chip 13, and the underlying reflective layer 32, dispersed Bragg reflective layer 16, and filler material layer 40 are individually cut to form a structure as shown in the figure. Figure 1 The diagram shows a separate light-emitting diode (LED) package structure 1. In some embodiments, the cutting process between the two sets of LED chips 13 can be performed using methods such as cutting tools, lasers, plasma dicing, other suitable methods or tools, or combinations thereof. For example, the cutting tool can be a diamond cutting tool. (See reference...) Figure 19 In some embodiments, the outer surfaces of the light-emitting diode package structure 1 are coplanar, that is, the outer surface 50A of the protective layer 50, the outer surface 32A of the reflective layer 32, the outer surface 14A of the dielectric layer 14, the outer surface 16A of the dispersed Bragg reflective layer 16, and the outer surface 40A of the filling material layer 40 are coplanar.

[0101] It is worth mentioning that, Figure 14 The cutting and manufacturing process allows for different cutting depths. For example... Figure 20 As shown, Figure 20 This is a cross-sectional schematic diagram of a light-emitting diode (LED) package structure 2 according to some embodiments of the present invention. The cutting depth can reach the lower surface 90B of the wavelength conversion layer 90. In the second direction D2, the lower surface 32B of the reflective layer 32 is approximately on the same plane as the lower surface 90B of the wavelength conversion layer 90, and the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 90B of the wavelength conversion layer 90. In some embodiments, the LED package structure 2 may not include the protective layer 50. Viewed from the cross-sectional direction, the reflective layer 32 may be L-shaped, an inverted L-shaped, square, or rectangular.

[0102] like Figure 21 As shown, Figure 21 The diagram shows a cross-sectional view of the LED packaging structure 3 according to some embodiments of the present invention. The cutting depth can be cut from the wavelength conversion layer 90 to the bottom of the third adhesive layer 12C, but not to the dielectric layer 14, that is, to the boundary between the third adhesive layer 12C and the dielectric layer 14. In the second direction D2, the lower surface 32B of the reflective layer 32 is approximately on the same plane as the light-emitting surface 13A of the LED chip 13, and the lower surface 50B of the protective layer 50 is located slightly higher than the light-emitting surface 13A of the LED chip 13.

[0103] In some embodiments, the third adhesive layer 12C is not required for bonding; that is, the LED package structure 3 may not include the third adhesive layer 12C. The wavelength conversion layer 90 may be placed on the light-emitting surface 13A of the LED chip 13, and the cutting depth may reach the lower surface 90B of the wavelength conversion layer 90. In the second direction D2, the lower surface 32B of the reflective layer 32 is approximately on the same plane as the light-emitting surface 13A of the LED chip 13, and the lower surface 50B of the protective layer 50 is slightly higher than the light-emitting surface 13A of the LED chip 13. In some embodiments, the LED package structure 3 may not include the protective layer 50. Viewed from the cross-sectional direction, the reflective layer 32 may be L-shaped, an inverted L-shaped, square, or rectangular.

[0104] like Figure 22 The diagram shows a cross-sectional view of a light-emitting diode (LED) package structure 4 according to some embodiments of the present invention. The cutting depth can extend from the wavelength conversion layer 90 to the bottom of the dielectric layer 14, but does not reach the dispersed Bragg reflector layer 16, i.e., it cuts to the boundary between the dielectric layer 14 and the dispersed Bragg reflector layer 16. The lower surface 32B of the reflector layer 32 contacts the upper surface 16T of the dispersed Bragg reflector layer 16. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the electrode surface 13B of the LED chip 13.

[0105] In some embodiments, the third adhesive layer 12C is not required for bonding; that is, the LED package structure 4 may not include the third adhesive layer 12C. The wavelength conversion layer 90 may be placed on the light-emitting surface 13A of the LED chip 13. The cutting depth can be from the wavelength conversion layer 90 to the bottom of the dielectric layer 14, but not to the dispersed Bragg reflector layer 16, i.e., to the boundary between the dielectric layer 14 and the dispersed Bragg reflector layer 16. The lower surface 32B of the reflective layer 32 contacts the upper surface 16T of the dispersed Bragg reflector layer 16. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the electrode surface 13B of the LED chip 13. In some embodiments, the LED package structure 4 may not include the protective layer 50. Viewed from the cross-sectional direction, the reflective layer 32 may be L-shaped, an inverted L-shaped, square, or rectangular.

[0106] like Figure 23 As shown, Figure 23This is a cross-sectional schematic diagram of the light-emitting diode package structure 5 according to some embodiments of the present invention. The cutting depth can be cut from the wavelength conversion layer 90 to the lower surface 16B of the dispersed Bragg reflector layer 16, but not to the filling material layer 40, that is, to the boundary between the dispersed Bragg reflector layer 16 and the filling material layer 40. The lower surface 32B of the reflector layer 32 is in contact with the upper surface 40T of the filling material layer 40. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 16B of the dispersed Bragg reflector layer 16.

[0107] In some embodiments, the third adhesive layer 12C is not required for bonding; that is, the LED package structure 5 may not include the third adhesive layer 12C. The wavelength conversion layer 90 may be placed on the light-emitting surface 13A of the LED chip 13. The cutting depth can be from the wavelength conversion layer 90 to the lower surface 16B of the dispersed Bragg reflector layer 16, but not to the filling material layer 40, i.e., to the boundary between the dispersed Bragg reflector layer 16 and the filling material layer 40. The lower surface 32B of the reflector layer 32 contacts the upper surface 40T of the filling material layer 40. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 16B of the dispersed Bragg reflector layer 16. In some embodiments, the LED package structure 5 may not include the protective layer 50. Viewed from the cross-sectional direction, the reflector layer 32 may be L-shaped, an inverted L-shaped, square, or rectangular.

[0108] Therefore, any one or more of the LED package structures 1, 2, 3, 4, and 5 can be arbitrarily combined and applied to adaptive smart headlamps. Multiple independent LED package structures 1, 2, 3, 4, and 5 are installed inside the adaptive smart headlamp. The reflective layer 32 of each independent LED package structure 1, 2, 3, 4, and 5 can prevent the light emitted by the LED chip 13 of LED package structure 1 from interfering with the LED chip 13 of another LED package structure 1, thus avoiding crosstalk between the LED chips 13 of each independent LED package structure 1, 2, 3, 4, and 5.

[0109] In some embodiments, the adaptive headlamp may include any or more of the light-emitting diode package structures 1, 2, 3, 4, and 5, which may be arbitrarily combined with each other and a circuit board (not shown), but the invention is not limited thereto. In some embodiments, the adaptive headlamp may include a processor (not shown) and an image capturing device (not shown). In some embodiments, the processor may be electrically connected to the package structure to perform calculations. In some embodiments, the processor may include a multi-core CPU, a central processing unit (CPU), a graphics processing unit (GPU), the like, or a combination thereof, but the invention is not limited thereto. In some embodiments, the image capturing device may include a light detection and ranking (LIDAR), a video recorder, a camera, the like, or a combination thereof, but the invention is not limited thereto. In some embodiments, the image capturing device may capture and transmit images to the processor. In some embodiments, the image capturing device may capture road images, pedestrian images, or vehicle images and transmit the road images, pedestrian images, or vehicle images to the processor. In some embodiments, the processor analyzes the captured images to determine whether one or more of the plurality of light-emitting diode package structures 1 are lit or turned off. For example, at least one of the multiple LED package structures 1 can be turned on or off depending on the environment. In some embodiments, the LED chips 13 of the LED package structure 1 within the adaptive headlamp can all be controlled independently.

[0110] Components in the embodiments of this invention can be freely mixed and matched as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this invention is not limited to the manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps described in the specific embodiments of the specification. Any manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps that are currently or will be developed can be understood from the disclosure of this invention, and can be used according to this invention as long as they can perform substantially the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of this invention includes the aforementioned manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps. No embodiment or claim of this invention needs to achieve all the objects, advantages, and / or features disclosed in this invention.

[0111] The above outlines several embodiments to enable those skilled in the art to better understand the viewpoints of the embodiments of the present invention. Those skilled in the art should understand that they can design or modify other manufacturing processes and structures based on the embodiments of the present invention to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent manufacturing processes and structures do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions, and replacements without departing from the spirit and scope of the present invention.

Claims

1. A light-emitting diode (LED) package structure, comprising: A light-emitting diode chip, wherein the light-emitting diode chip includes a light-emitting surface and multiple side surfaces; A wavelength conversion layer is disposed on the light-emitting surface of the light-emitting diode chip, and the wavelength conversion layer includes multiple side surfaces; A dielectric layer covering this side surface of the light-emitting diode chip; A distributed Bragg reflector layer is disposed under the light-emitting diode chip; A conductive element is disposed beneath the dispersed Bragg reflector layer and passes through the dispersed Bragg reflector layer to be electrically connected to the light-emitting diode chip; and A reflective layer is disposed on the side surface of the wavelength conversion layer.

2. The light-emitting diode packaging structure as described in claim 1, wherein the reflective layer is L-shaped.

3. The light-emitting diode packaging structure as described in claim 1 further includes a protective layer disposed on the reflective layer.

4. The LED packaging structure as described in claim 2 further includes a protective layer having an upper surface, an inner surface, a lower surface, and an outer surface, wherein the reflective layer is disposed on the lower surface and the inner surface of the protective layer, exposing the upper surface and the outer surface of the protective layer.

5. The light-emitting diode packaging structure as claimed in claim 1, wherein the dielectric layer comprises epoxy resin, polyimide, polybenzoxazole, silicone resin, silicon oxide, or silicon nitride.

6. The light-emitting diode packaging structure as described in claim 1, wherein the conductive element is a metal pillar.

7. The light-emitting diode packaging structure of claim 1 further includes a filler material layer disposed under the dispersed Bragg reflector layer and surrounding the conductive element.

8. The light-emitting diode packaging structure as described in claim 1, wherein the light-emitting diode chip does not have a growth substrate.

9. The light-emitting diode packaging structure of claim 3, wherein the protective layer may include diffused particles.

10. The light-emitting diode packaging structure of claim 7, wherein the filler material layer comprises carbon black.

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