Semiconductor light emitting device

Abstract

A highly reliable semiconductor light emitting device that suppresses deterioration of a phosphor is provided. The semiconductor light emitting device includes a lead frame, a semiconductor light emitting element, a frame body, and a phosphor portion. The lead frame includes a first electrode body having an element mounting surface and a second electrode body arranged separately from the first electrode body. The semiconductor light emitting element is arranged on the element mounting surface of the first electrode body. The frame body is formed over surfaces of the first electrode body and the second electrode body. The frame body forms a recess together with the element mounting surface and the surface of the second electrode body. The phosphor portion fills the recess to cover the semiconductor light emitting element. The phosphor portion is made of a first resin material containing a first phosphor that is excited by light emitted from the semiconductor light emitting element to generate fluorescent light. The first phosphor is a KSF phosphor. The first resin material is a phenyl silicone resin.

Description

Technical Field

[0001] This invention relates to a semiconductor light-emitting device including a semiconductor light-emitting element. Background Technology

[0002] A semiconductor light-emitting device employing a lead frame has been disclosed. For example, Japanese Patent No. 5766976 discloses a semiconductor light-emitting device having a lead frame, a semiconductor light-emitting element disposed on the lead frame, and a sealing material covering the semiconductor light-emitting element on the lead frame and made of a dielectric resin containing a phosphor.

[0003] For example, in the semiconductor light-emitting device disclosed in Japanese Patent No. 5766976, the use of KSF phosphors as phosphors is taken into consideration. KSF phosphors exhibit hydrolytic properties when in contact with moisture. Therefore, for example, if moisture that has entered the sealing material during the use of the semiconductor light-emitting device reaches the KSF phosphor, the chromaticity of the emitted light may change due to the hydrolysis of the KSF phosphor, and the desired light may not be obtained from the semiconductor light-emitting device. In other words, the reliability of the semiconductor light-emitting device may be reduced. Summary of the Invention

[0004] The present invention was made in view of the above-mentioned problems, and the object of the present invention is to provide a highly reliable semiconductor light-emitting device that suppresses the degradation of phosphors.

[0005] The semiconductor light-emitting device according to the present invention includes a lead frame, a semiconductor light-emitting element, a frame body, and a phosphor portion. The lead frame includes a first electrode body having an element mounting surface and a second electrode body disposed separately from the first electrode body. The semiconductor light-emitting element is disposed on the element mounting surface of the first electrode body. The frame body is formed above the surfaces of the first and second electrodes. The frame body, together with the surface of the element mounting surface and the surface of the second electrode body, forms a recess. The phosphor portion fills the recess to cover the semiconductor light-emitting element. The phosphor portion is made of a first resin material containing a first phosphor that is excited by light emitted from the semiconductor light-emitting element to generate fluorescence. The first phosphor is a KSF phosphor. The first resin material is a phenyl silicone resin. Attached Figure Description

[0006] Figure 1 This is a top view of the light-emitting device according to Embodiment 1;

[0007] Figure 2 This is a cross-sectional view of the light-emitting device according to Embodiment 1;

[0008] Figure 3 This is a cross-sectional view of the light-emitting device according to Embodiment 1;

[0009] Figure 4 This is an enlarged view of the cross-section of the constituent components of the light-emitting device according to Embodiment 1;

[0010] Figure 5 This is a table illustrating the verification results of the light-emitting device according to Embodiment 1 and the comparative example;

[0011] Figure 6 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0012] Figure 7 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0013] Figure 8 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0014] Figure 9 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0015] Figure 10 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0016] Figure 11 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1;

[0017] Figure 12 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1; and

[0018] Figure 13 This is a top view illustrating an exemplary manufacturing process of the light-emitting device according to Embodiment 1.

[0019] Description of reference numerals in the attached figures

[0020] 100 light-emitting devices

[0021] 11-lead frame

[0022] 13-frame structure

[0023] 15 light-emitting elements

[0024] 16 protective elements

[0025] 18 Sealing body section

[0026] 19 Fluorescent Parts

[0027] 21, 22 Adhesive components

[0028] 24 Media Resin

[0029] 25 First fluorescent cells

[0030] 26 Second fluorescent cells

[0031] 27 light scattering particles Detailed Implementation

[0032] Embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Note that the same reference numerals are used for the same components in the drawings, and descriptions of repeated components are omitted.

[0033] [Implementation Method 1]

[0034] use Figures 1 to 3 The configuration of the light-emitting device 100 according to Embodiment 1 is described. Figure 1 This is a top view of the light-emitting device 100. Figure 2 It is along Figure 1 The cross-sectional view of the light-emitting device 100 shown is taken from line 2-2. Figure 3 It is along Figure 1 The cross-sectional view of the light-emitting device 100 shown is taken along line 3-3. Figure 2 and Figure 3 In the diagram, the vertical direction is the height direction of the light-emitting device 100.

[0035] [Overview of the light-emitting device 100]

[0036] The light-emitting device 100 is configured to include a lead frame 11, a frame body 13, a light-emitting element 15, a protective element 16, a sealing body 18, and a phosphor body 19. Figure 1 In the diagram, the fluorescent part 19 is omitted to avoid complicating the illustration, and the sealing part 18 is drawn with shading. Furthermore, in... Figure 1 In the diagram, the line segment that passes through the center of the upper surface of the light-emitting device 100 and divides the width of the light-emitting device 100 in the left-right direction into two halves is represented by a dashed line as the center line CL.

[0037] [Leader Frame 11]

[0038] First, the configuration of the lead frame 11 is described. The lead frame 11 is composed of a first electrode body 11A and a second electrode body 11B arranged separately from each other on the same plane. Each of the first electrode body 11A and the second electrode body 11B is a metal plate having a rectangular upper surface shape. In the lead frame 11, as... Figure 1 As shown, the short side of the first electrode body 11A is opposite to the long side of the second electrode body 11B.

[0039] The gap between the first electrode 11A and the second electrode 11B is filled with an insulating resin material that constitutes the frame 13. In other words, the first electrode 11A and the second electrode 11B are insulated from each other by the resin material that forms the frame 13 and is disposed between them.

[0040] When the light-emitting device 100 is viewed from above, in the top view, the first electrode body 11A has a larger size than the second electrode body 11B, and the upper surface of the first electrode body 11A is the light-emitting element mounting surface on which the light-emitting element 15 can be placed. In addition, the upper surface of the second electrode body 11B is the protective element mounting surface on which the protective element 16 can be placed.

[0041] like Figure 3 As shown, the first electrode body 11A has a protruding portion 11P that laterally protrudes in an eave-like manner from the side surface including the long side of the first electrode body 11A. Similarly, the second electrode body 11B has a protruding portion 11P (not shown) that laterally protrudes in an eave-like manner from the side surface including the short side of the second electrode body 11B. In other words, each of the first electrode body 11A and the second electrode body 11B has a stepped structure including the protruding portion 11P on its side surface.

[0042] Each of the first electrode body 11A and the second electrode body 11B has a base material made of copper (Cu) and is configured to have nickel (Ni) and silver (Ag) laminated sequentially on the surface of the base material. In the following text, the designation for the metal laminates on the base material is also described as Ni / Ag.

[0043] It should be noted that aluminum (Al) and iron-nickel-cobalt alloys (Fe-Ni-Co) can also be used as base materials. In addition, titanium (Ti) / gold (Au), Ni / Au, Ti / Ag, etc. can also be used on the surface of the base material.

[0044] [Framework 13]

[0045] Next, the frame body 13 will be described. The frame body 13 is a frame-shaped body formed along the outer edges of the corresponding upper surfaces of the first electrode body 11A and the second electrode body 11B, and forms a recess as a bottom surface with the upper surfaces of the first electrode body 11A and the second electrode body 11B.

[0046] The inner surface 13S of the recess forming the frame body 13 slopes outward, causing the space within the recess to expand upward. In other words, the recess formed by the frame body 13 and the lead frame 11 has a downwardly recessed inverted truncated quadrangular pyramid shape.

[0047] The end 11AE, including the short side of the first electrode body 11A, and the end 11BE, including the long side of the second electrode body 11B, protrude outward from the side of the frame body 13. That is, the ends 11AE and 11BE protrude and extend from the side. In other words, the frame body 13 is formed such that each of the ends 11AE of the first electrode body 11A and the ends 11BE of the second electrode body 11B is exposed.

[0048] As described above, the frame body 13 has a filling portion 13A that fills the gap between the first electrode body 11A and the second electrode body 11B (see [link]). Figure 1 and Figure 2 Additionally, the frame body 13 covers the two side surfaces including the long side of the first electrode body 11A and the two side surfaces including the short side of the second electrode body 11B. That is, it covers the entire side surface to the outer edges of the corresponding upper surfaces of the first electrode body 11A and the second electrode body 11B, thereby covering the protruding portion 11P (see...). Figure 3 ).

[0049] Compared to the case without the protruding portion 11P, by providing the protruding portion 11P on the side surfaces of the first electrode body 11A and the second electrode body 11B, the contact area between the lead frame 11 and the frame body 13 increases when the lead frame 11 is covered by the frame body 13 in the same manner. This increases the fixing strength between the lead frame 11 and the frame body 13, making it difficult for the frame body 13 to separate from the lead frame 11.

[0050] In the light-emitting device 100 of the embodiment, the frame body 13 is made of a heat-resistant thermoplastic polycyclohexane terephthalate (PCT) resin as a base material (medium resin), which contains titanium oxide (TiO2) particles as light-scattering particles. By constructing this material, the frame body 13 has the function of diffusely reflecting light incident on the frame body 13.

[0051] In addition, the frame 13 has sufficient heat resistance to the heat generated when the light-emitting device 100 is soldered to the circuit board (e.g., about 240°C). Instead of PCT resin, high-melting-point nylons such as PA6T and PA9T, as well as thermosetting resins such as epoxy resin, silicone resin, and acrylic resin can be used.

[0052] To provide this light scattering function, in the light-emitting device 100 of the embodiment, the TiO2 particles in the frame 13 have a particle size of 200 nm to 300 nm, and the amount of TiO2 particles added to the PCT resin is 16 wt% to 54 wt%.

[0053] [Light-emitting element 15]

[0054] Next, the light-emitting element 15 is described. The light-emitting element 15 is an element having a rectangular upper surface shape and is bonded to the upper surface of the first electrode body 11A of the lead frame 11 via an adhesive member 21. The light-emitting element 15 is a light-emitting diode (LED) having an aluminum gallium nitride (AlGaN) crystal semiconductor structure layer, which includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (all of which are not illustrated).

[0055] In the light-emitting device 100, an n-electrode (not shown) disposed in an n-type semiconductor layer of the semiconductor structure layer is electrically connected to a first electrode body 11A via a bonding wire W1 made of gold (Au). Additionally, a p-electrode (not shown) disposed in a p-type semiconductor layer of the semiconductor structure layer is electrically connected to a second electrode body 11B via a bonding wire W2 made of Au.

[0056] In the light-emitting device 100, the first electrode body 11A serves as the cathode electrode, and the second electrode body 11B serves as the anode electrode. Therefore, when an external voltage is applied to power the light-emitting element 15, light is emitted from the light-emitting layer of the semiconductor structure layer. When a current is applied to the light-emitting element 15, blue light with a peak wavelength of approximately 450 nm is emitted from the light-emitting layer.

[0057] The adhesive member 21 for bonding the light-emitting element 15 to the first electrode body 11A is made of silsesquioxane (SQ)-based silicone resin, which is a base material containing TiO2 particles (as light-scattering particles). By constructing this material, the adhesive member 21 has the function of diffusely reflecting light emitted from the light-emitting element 15 and incident on the adhesive member 21.

[0058] In addition, SQ-based silicone resin has a higher Shore hardness than PCT resin and dimethyl silicone resin, and makes the connection stable when wire bonding is performed using bonding wire W1 or bonding wire W2.

[0059] [Protective Component 16]

[0060] Next, the protection element 16 is described. The protection element 16 is an element having a rectangular upper surface shape and is attached to the upper surface of the second electrode body 11B of the lead frame 11. The protection element 16 is a Zener diode (ZD), which bypasses the current flowing in the opposite direction to avoid damage to the light-emitting element 15 when a voltage in the opposite direction is applied to the electrode of the light-emitting element 15.

[0061] The protective element 16 has a lower surface electrode (not shown) disposed on its lower surface, which is bonded to the second electrode body 11B via a conductive adhesive member 22. The adhesive member 22 is a so-called silver paste containing silver (Ag) particles (which are conductive particles) in epoxy resin. Note that a so-called epoxy solder containing tin-silver-copper (Sn-Ag-Cu) particles can also be used.

[0062] Furthermore, in the light-emitting device 100, the upper surface electrode (not shown) disposed on the upper surface of the protective element 16 is electrically connected to the first electrode body 11A via a bonding wire W3 made of Au. That is, the protective element 16 is bidirectional.

[0063] In addition to Zener diodes, a rheostat (variable resistor) can also be used as a protection element 16. The rheostat is powered from the outside to drive the light-emitting element 15 while protecting the light-emitting element 15 from surge currents that may momentarily exceed the steady-state flow and obtaining a constant voltage.

[0064] [Sealed body 18]

[0065] Next, the sealing portion 18 will be described. The sealing portion 18 is a cover that extends from the middle of the inner surface 13S of the frame body 13 to the corresponding upper surfaces of the first electrode body 11A and the second electrode body 11B, and is formed in a frame shape along the inner surface. That is, when viewed from inside the recess, the sealing portion 18 seals the interface between the frame-shaped portion of the frame body 13 and the corresponding upper surfaces of the first electrode body 11A and the second electrode body 11B. The sealing portion 18 can reach the upper end of the inner surface 13S of the frame body 13.

[0066] like Figure 1 As shown, the sealing portion 18 covers the area of ​​the upper surface of the first electrode body 11A in the recess, excluding the element mounting surface on which the light-emitting element 15 is disposed. More specifically, the sealing portion 18 is formed to surround the light-emitting element 15 in a manner that does not contact the adhesive member 21 or the light-emitting element 15. The sealing portion 18 only needs to not cover the outer surface of the light-emitting element 15. For example, the sealing portion 18 may contact or cover the adhesive member 21.

[0067] like Figure 1 and Figure 2 As shown, the sealing body portion 18 covers the entire surface of the protective element 16 in the recess while also covering the entire upper surface of the second electrode body 11B and the filling portion 13A of the frame body 13. That is, in this respect, the sealing body portion 18 seals (covers) the end of the interface between the frame body 13 and the lead frame 11, which is exposed in the recess formed by the frame body 13 and the lead frame 11.

[0068] In addition, the sealing body portion 18 continuously covers the connection portion of the bonding line W1 connected to the first electrode body 11A, the connection portion of the bonding line W2 connected to the second electrode body 11B, and the connection portion of the bonding line W3 connected to the upper surface electrode of the protective element 16.

[0069] In the light-emitting device 100 of the embodiment, similar to the adhesive member 21, the sealing body 18 is made of a silsesquioxane alkyl silicone resin containing TiO2 particles as light-scattering particles as the base material. By constructing this material, the sealing body 18 has the function of diffusely reflecting light emitted from the light-emitting element 15 and incident on the sealing body 18.

[0070] [Fluorescent body 19]

[0071] Next, the phosphor portion 19 will be described. The phosphor portion 19 is a cover formed by filling the recess formed by the lead frame 11 and the frame body 13 and covering the light-emitting element 15 and the sealing portion 18. The height of the upper surface of the phosphor portion 19 is the same as the height of the upper surface of the frame-shaped portion forming the recess of the frame body 13.

[0072] Here, refer to Figure 4 The detailed configuration of the phosphor part 19 is described. Figure 4 This is a diagram illustrating the configuration of the phosphor portion 19. Figure 4 In the middle, the dotted line indicates a portion of the cross-sectional surface of the phosphor part 19.

[0073] like Figure 4 As shown, the phosphor portion 19 is composed of a translucent dielectric resin 24 containing a first phosphor 25, a second phosphor 26, and light-scattering particles 27 having light-scattering properties. The first phosphor 25 and the second phosphor 26 are excited by light emitted from the light-emitting element 15 to produce fluorescence with different wavelengths from each other.

[0074] The dielectric resin 24 is made of phenyl silicone resin. Specifically, the phenyl silicone resin used as the dielectric resin 24 has the following configuration: wherein the main chain is composed of siloxane bonds (Si-O-Si), and the methyl groups (-CH3) and phenyl groups (-C6H5) as side chains are bonded to the silicon (Si) of the siloxane bonds, as shown in the following chemical formula 1.

[0075] [Chemical Formula 1]

[0076]

[0077] The first phosphor 25 is a phosphor that generates red fluorescence with a peak wavelength of approximately 630 nm in response to blue light emitted from the light-emitting element 15. In the light-emitting device 100, the first phosphor 25 is KSF (K2SiF6:Mn) in which manganese (Mn) as an activator is added to potassium fluoride silicon fluoride (K2SiF6) as a parent crystal. 4 +) fluorescent particles.

[0078] A protective film 25F with translucency and moisture resistance is formed on the surface of the first phosphor 25. The protective film 25F is, for example, aluminum oxide (Al2O3). For example, the protective film 25F is formed by atomic layer deposition (ALD). In the light-emitting device 100 of this embodiment, the protective film 25F has a thickness of 10 nm to 100 nm.

[0079] To further enhance the moisture resistance of the KSF phosphor constituting the first phosphor 25, the first phosphor 25 may be composed of a KSF phosphor and a K2SiF6 layer without added Mn formed to cover the surface of the KSF phosphor, and a protective film 25F may be formed on the K2SiF6 layer.

[0080] The second phosphor 26 is a phosphor that generates green fluorescence with a peak wavelength of approximately 540 nm in response to blue light emitted from the light-emitting element 15. In the light-emitting device 100, the second phosphor 26 is β-silicon (β-silicon: Eu) added with europium (Eu) as an activator. 2 +) fluorescent particles.

[0081] In the light-emitting device 100 of the embodiment, each of the first phosphor 25 and the second phosphor 26 has a particle size of 10 μm to 35 μm, and the amount of the first phosphor 25 added to the medium resin 24 and the amount of the second phosphor 26 added to the medium resin 24 are each 35 wt%. In addition, the weight composite ratio of the first phosphor 25 and the second phosphor 26 to the medium resin 24 is 70:30.

[0082] When blue light emitted from the light-emitting element 15 enters the phosphor section 19, a portion of the blue light passes directly through the dielectric resin 24, and a portion of the blue light excites the first phosphor 25 and the second phosphor 26, thereby generating fluorescence from the excited phosphors.

[0083] Therefore, the excitation light that does not contribute to fluorescence generation but passes through the dielectric resin 24, as well as the fluorescence emitted from the first phosphor 25 and the second phosphor 26, are emitted from the upper surface of the phosphor portion 19. As a result, white light, which is a mixture of blue light, red fluorescence, and green fluorescence, is emitted from the upper surface of the phosphor portion 19. In other words, the upper surface of the phosphor portion 19 is the light-emitting surface of the light-emitting device 100.

[0084] In the light-emitting device 100, the light-scattering particles 27 are made of yttrium phosphate (YPO4), which has excellent forward scattering properties. To protect the light-scattering particles 27 from moisture, similar to the first phosphor 25, a protective film made of Al2O3 can be formed on the surface of the light-scattering particles 27.

[0085] Besides YPO4, alumina (Al2O3), titanium dioxide (TiO2), and zirconium oxide (ZrO2) can be used as light-scattering particles.27 When using alumina, titanium dioxide, or zirconium oxide, a moisture-resistant protective film is not required.

[0086] In the light-emitting device 100 of this embodiment, as described above, the phosphor portion 19 is composed of a dielectric resin 24, which is made of a phenyl silicone resin containing a first phosphor 25 as a KSF phosphor and a second phosphor 26 as a β-silicon phosphor.

[0087] Here, the KSF fluorophore exhibits the property of hydrolysis upon contact with moisture. Specifically, when the KSF fluorophore comes into contact with moisture, its decomposition proceeds according to the following chemical formula 2, producing manganese dioxide (MnO2) and hydrogen fluoride (HF).

[0088] [Chemical Formula 2]

[0089]

[0090] In the light-emitting device 100, as described above, the KSF phosphor and the β-silicon phosphor are excited by the excitation light (blue light) emitted from the light-emitting element 15 to generate fluorescence, thereby emitting white light mixed with blue light, red fluorescence and green fluorescence from the upper surface of the phosphor portion 19.

[0091] For example, if the hydrolysis of KSF phosphors takes place in a light-emitting device that mixes blue, red, and green light to produce white light, the red component that makes up the white light may be reduced, and the balance of the emission intensities of blue, red, and green light may be lost.

[0092] For example, if only the KSF phosphor undergoes hydrolysis in the medium resin 24 and the red component is reduced, the light emitted from the light-emitting device 100 may shift the original chromaticity of white towards cyan (the complementary color of red), resulting in a so-called chromaticity deviation. In other words, there is a risk that white light with the desired chromaticity cannot be obtained from the light-emitting device 100.

[0093] Furthermore, the HF produced by chemical formula 2 above is a strong acid and is harmful to the dielectric resin. Therefore, for example, when silicone resin is used as the dielectric resin, HF breaks the siloxane bonds of the silicone resin. As a result, there is a risk of softening and deterioration due to the decrease in the molecular weight of the dielectric resin. For example, low molecular weight dielectric resins can be eluted by exudation, leading to phenomena such as volume reduction and discoloration of the silicone resin.

[0094] Furthermore, the MnO2 produced by the above-described chemical formula 2 has a brown appearance, and when the MnO2 is produced in the medium resin, the phosphor portion 19 appears to change color to pale yellow or brown. If this occurs, the translucency of the phosphor portion 19 may decrease.

[0095] When the hydrolysis of the KSF phosphor occurs in the phosphor section 19, as described above, chromaticity deviations in the emitted light may occur due to factors such as a reduction in the red component and deterioration of the dielectric resin. As a result, there is a risk that the desired light may not be obtained from the light-emitting device 100. In other words, the reliability of the light-emitting element may be reduced.

[0096] In the light-emitting device 100 of this embodiment, the dielectric resin 24 used in the phosphor portion 19 is made of phenyl silicone resin as described above. The phenyl silicone resin used for the dielectric resin 24 has a so-called bulk configuration (side chain) where the phenyl group is a three-dimensional bulk when observed at the molecular level. Due to this configuration (side chain), the phenyl silicone resin has moisture-proof properties, making it difficult for moisture to penetrate into the resin.

[0097] Therefore, in the light-emitting device 100 of this embodiment, the phosphor portion 19 is formed of a medium resin having such properties, and thus, for example, even if moisture adheres to the surface of the phosphor portion 19, the adhered moisture is difficult to penetrate. That is, moisture is unlikely to reach the first phosphor 25, which is the KSF phosphor. As a result, using the light-emitting device 100 of this embodiment, hydrolysis of the KSF phosphor is unlikely to occur.

[0098] Furthermore, due to the large-volume configuration (side chains) of the phenyl silicone resin as described above, it can suppress the diffusion of impurities such as corrosive gases and moisture. Therefore, even if moisture permeates through the dielectric resin 24 of the phosphor portion 19 and the permeated moisture causes hydrolysis of the KSF phosphor, the phenyl group becomes a steric hindrance to the HF generated by the hydrolysis. This makes it difficult for HF to reach the siloxane bonds in the silicone resin, and it is unlikely that deterioration will occur due to the decomposition of the main chain and side chains of the dielectric resin 24 by HF.

[0099] In the light-emitting device 100 of this embodiment, a protective film 25F made of moisture-resistant Al2O3 is formed on the surface of the first phosphor 25, which is a KSF phosphor. Therefore, compared with the case where the protective film 25F is not formed, the moisture resistance of the first phosphor 25 itself can be improved. That is, the hydrolysis of the first phosphor 25 can be suppressed.

[0100] Furthermore, in the light-emitting device 100 of this embodiment, the interface between the lead frame 11 and the frame body 13 in the recess of the light-emitting device 100 is sealed by the sealing body portion 18. Therefore, it is possible to prevent moisture and impurities such as corrosive gases from penetrating into the recess through the interface.

[0101] Especially near the light-emitting element 15, the light density of blue light is high, and the temperature is high due to the heat generated by the light-emitting element 15. As a result, the hydrolysis of the KSF phosphor is promoted in this environment. Therefore, by providing the sealing body portion 18, the hydrolysis of the KSF phosphor in the environment can be suppressed. In addition, delamination between the lead frame 11 and the frame body 13 can be avoided.

[0102] In the light-emitting device 100 of this embodiment, as described above, the moisture resistance of the dielectric resin 24 is improved by using phenyl silicone resin as the dielectric resin 24, the moisture resistance of the first phosphor 25 is improved by forming a protective film 25F on the surface of the first phosphor 25, and the intrusion of impurities caused by the sealing of the interface between the lead frame 11 and the frame body 13 is suppressed by the sealing body portion 18. This configuration with these three points can prevent the deterioration of the phosphor portion 19. Therefore, using the light-emitting device 100 of this embodiment, a highly reliable light-emitting device can be provided.

[0103] In the light-emitting device 100 of this embodiment, of the three points described above, it is only necessary to improve the moisture resistance of the dielectric resin 24 by using phenyl silicone resin. Forming a protective film 25F on the first phosphor 25 or forming a sealing portion 18 in the recess is not necessary.

[0104] In the light-emitting device 100 of this embodiment, the protective element 16 is not required. That is, in one aspect, only the light-emitting element 15 can be connected to the first electrode body 11A of the lead frame 11.

[0105] [Verification Test]

[0106] The following uses Figure 5 The verification of the light-emitting device 100 of the embodiment and the light-emitting device of the comparative example are described, and the results thereof are presented. Figure 5 This is a table of photographs of the upper surface of an embodiment sample having a light-emitting device 100 after testing the sample, and a comparative sample of a comparative example.

[0107] First, a comparative sample is described. The light-emitting device used as the comparative sample differs from the light-emitting device 100 in that it uses dimethyl silicone resin as the medium resin 24 used in the phosphor section 19 of the light-emitting device 100. Other points, such as the content ratio of the first phosphor 25 (KSF phosphor) and the second phosphor 26 (β-Syron phosphor) to the medium resin 24, are the same as those described for the light-emitting device 100.

[0108] Next, the details of the test are described. In this test, each of the implementation sample and the comparative sample was subjected to a moisture-proof and energized test. Specifically, the implementation sample and the comparative sample were placed in an environment with a temperature of 85°C and a humidity of 85%, and the condition of each sample was observed after 1000 hours and 2000 hours while a current of 170mA was applied to each sample.

[0109] In this test, the change of the surface state of each sample over time was confirmed when the thickness of the protective film 25F formed on the surface of the KSF phosphor, which serves as the first phosphor 25, was set to 0 nm (no protective film 25F), 10 nm, 30 nm, 50 nm, 70 nm, and 100 nm.

[0110] according to Figure 5 The table shows that, firstly, when comparing the surface state changes of the embodiment samples and comparative samples over time with the protective film 25F having a thickness of 0 nm (i.e., without the protective film 25F), the surface of the embodiment samples did not change significantly between 1000 and 2000 hours. In contrast, discoloration of the phosphor portion 19 was confirmed in the comparative samples, particularly after 2000 hours.

[0111] Furthermore, in comparative samples with a protective film 25F thickness ranging from 10 nm to 50 nm, a discoloration of the phosphor portion 19 was confirmed after 2000 hours. In particular, this phenomenon was confirmed in the center of the upper surface of the phosphor portion 19 (i.e., in the region directly above the light-emitting element 15).

[0112] Here, although the dimethyl silicone resin of the media resin 24 in the phosphor portion 19 used for the comparative sample has excellent light and heat resistance, it has the property of large gaps within the resin, which makes it easy for moisture to penetrate. In other words, the dimethyl silicone resin has relatively low moisture resistance.

[0113] The surface changes observed in the comparative sample after 2000 hours are believed to be due to the aforementioned properties of dimethylsilicone resin. Moisture permeates into the dielectric resin 24 of the phosphor portion 19 in the comparative sample and comes into contact with the KFS phosphor contained in the dielectric resin 24, thereby causing hydrolysis of the KFS phosphor. In other words, it is believed that when dimethylsilicone resin is used as the dielectric resin 24 of the phosphor portion 19, it cannot suppress the degradation of the phosphor portion 19.

[0114] On the other hand, in the embodiment sample, even when the protective film 25F is not formed on the surface of the first phosphor 25, or when the thickness of the protective film 25F increases, the surface of the phosphor portion 19 does not change much. This is believed to be because the moisture resistance of the dielectric resin 24 is greatly improved by using phenyl silicone resin as the dielectric resin 24, and moisture penetration into the phosphor portion 19 is suppressed.

[0115] Therefore, in the embodiment sample having the configuration of the light-emitting device 100 of this embodiment, compared with the comparative sample, using phenyl silicone resin in the dielectric resin 24 of the phosphor portion 19 suppresses the deterioration of the phosphor portion 19. Furthermore, in the embodiment sample, by setting the thickness of the protective film 25F within the range of 10 nm to 100 nm, the surface condition of the phosphor portion 19 can be maintained in a good state.

[0116] [Manufacturing method of light-emitting device 100]

[0117] The following uses Figures 6 to 13 To describe the method for manufacturing the light-emitting device 100. Figures 6 to 13 Each of these is a top view illustrating an exemplary manufacturing process of the light-emitting device 100. Although the number of continuously arranged lead frames 11 is the same as the number of light-emitting devices 100 manufactured in a single operation, in... Figures 6 to 13 Only two of them are shown as examples.

[0118] The light-emitting device 100 is manufactured according to a series of steps including a lead frame fabrication process, a frame body formation process, an element bonding process, a sealing body formation process, a phosphor formation process, and an individualization process. In the lead frame fabrication process, a plate material including a lead frame 11 is fabricated. In the frame body formation process, a frame body 13 is formed. In the element bonding process, a light-emitting element 15 and a protective element 16 are bonded to the lead frame 11. In the sealing body formation process, a sealing body 18 is formed. In the phosphor formation process, a phosphor 19 is formed.

[0119] [Leader Frame Fabrication Method]

[0120] First, a sheet of Cu is prepared, and then the prepared sheet is punched out using a mold and processed. Specifically, as follows... Figure 6 As shown, the plates forming the first electrode body 11A and the second electrode body 11B are shaped as follows: a portion of each of the first electrode body 11A and the second electrode body 11B is supported by a support frame FL.

[0121] At this time, a gap 11G is also provided between the first electrode body 11A and the second electrode body 11B. For example, the protruding portions 11P of the first electrode body 11A and the second electrode body 11B are formed by etching the back surfaces of the first electrode body 11A and the second electrode body 11B.

[0122] Next, an Ni / Ag plating layer is formed on the surface of the plate on which the first electrode body 11A and the second electrode body 11B will be formed by electroplating. Thus, a lead frame 11 is formed, each lead frame 11 including the first electrode body 11A and the second electrode body 11B.

[0123] It should be noted that metals other than Cu, such as aluminum (Al) and iron-nickel-cobalt alloys (Fe-Ni-Co), can also be used as the base material for the lead frame 11. In addition, besides Ni / Ag, titanium (Ti) / Au, Ni / Au, Ti / Ag, etc. can also be used as coatings.

[0124] Furthermore, the method for processing the substrate to prepare the first electrode body 11A and the second electrode body 11B is not limited to stamping with a die. For example, the substrate can be processed by etching using a resist mask.

[0125] [Frame Forming Process]

[0126] Next, as Figure 7 As shown, a frame body 13 is formed on the lead frame 11. Specifically, by insert molding, the lead frame 11 having a support frame FL is placed and fixed in a mold having a recess, and a precursor resin containing TiO2 particles as light scattering particles in PCT resin, which is a thermoplastic resin, is pressed into the recess.

[0127] Then, by heating the mold at 150°C for 120 minutes, a lead frame 11 with a frame body 13 is obtained. At this time, a filling portion 13A is also formed to fill the gap 11G between the first electrode body 11A and the second electrode body 11B.

[0128] In addition to PCT resin, PA6T and PA9T resins, which are the same as thermoplastic resins, can also be used as the medium resin for the framework 13. Thermosetting resins such as silicone resin, epoxy resin, and acrylic resin can also be used. Furthermore, in addition to TiO2, alumina (Al2O3), zirconium oxide (ZrO2), etc., can be used as light-scattering particles.

[0129] [Component bonding process]

[0130] Next, as Figure 8 As shown, the light-emitting element 15 and the protective element 16 are bonded to the lead frame 11. Specifically, firstly, an adhesive member 21, which serves as an insulating adhesive (die attachment material), is applied to the light-emitting element mounting area on the upper surface of the first electrode body 11A. Next, the light-emitting element 15 is placed on the adhesive member 21 applied to the upper surface of the first electrode body 11A using a mounting tool.

[0131] Then, the adhesive component 22, which serves as a conductive adhesive (die attachment material), is applied to the protective element mounting area on the upper surface of the second electrode body 11B. Next, the protective element 16 is placed onto the adhesive component 22 applied to the upper surface of the second electrode body 11B using an installer. Afterward, the light-emitting element 15 and the protective element 16 are joined and mounted by heating the lead frame 11 at approximately 180°C for 30 minutes.

[0132] Finally, the n-electrode of the light-emitting element 15 is connected to the first electrode body 11A via bonding line W1, and the p-electrode of the light-emitting element 15 is connected to the second electrode body 11B via bonding line W2. Additionally, the upper surface electrode of the protective element 16 is connected to the first electrode body 11A via bonding line W3.

[0133] [Sealing Body Forming Process]

[0134] Next, a sealing body portion 18 is formed along the frame-shaped portion that forms the recess of the frame body 13. First, as... Figure 9 As shown, precursor resin 18M is applied in appropriate amounts to the short side end of the first electrode body 11A and to the filling portion 13A of the frame body 13. In the precursor resin 18M, TiO2 particles with a particle size of 1 nm to 500 nm are contained in the SQ resin.

[0135] Then, as Figure 10 As shown, by allowing the corresponding precursor resins 18M applied to the short side end of the first electrode body 11A and the filling portion 13A of the frame body 13 to stand for a period of time, the precursor resins 18M are wetted and spread from the corresponding application positions along the inner surface 13S of the frame body 13 toward the central line CL.

[0136] Specifically, the precursor resin 18M applied to the short side of the first electrode body 11A covers the interface between the short side of the first electrode body 11A and the frame body 13 from the application position, while wetting and spreading to cover the interface between the long side of the first electrode body 11A and the frame body 13.

[0137] Furthermore, the precursor resin 18M applied to the filling portion 13A spreads along the filling portion 13A from the application position to cover the interface between the long and short sides of the second electrode body 11B and the frame body 13, as well as the interface between the long side of the first electrode body 11A and the frame body 13.

[0138] Therefore, as Figure 11 As shown, the precursor resin 18M is wetted and spread, thereby causing the corresponding precursor resins 18M applied to the short side end of the first electrode body 11A and the filling portion 13A of the frame body 13 to eventually coalesce with each other near the central line CL. Then, by heating at 180°C for five minutes, the sealing body portion 18 is formed.

[0139] At this time, the sealing body 18 covers the connection portion between the first electrode body 11A and the bonding line W1, the connection portion between the second electrode body 11B and the bonding line W2, and the connection portion between the upper surface electrode of the protective element 16 and the bonding line W3. That is, in this aspect, the sealing body 18 seals the connection portions between the respective electrode bodies and the bonding lines W1 to W3.

[0140] [Fluorescent Body Formation Process]

[0141] Next, as Figure 12 As shown, a phosphor portion 19 is formed, filling the recess formed by the lead frame 11 and the frame body 13 and covering the light-emitting element 15. Specifically, a precursor resin that will become the phosphor portion 19 is filled into the recess. In the precursor resin, KSF phosphor, β-siliconium phosphor, and YPO4 particles are contained in a phenyl silicone resin.

[0142] The upper and side surfaces of the light-emitting element 15 are covered by the precursor resin by filling the recess with the precursor resin. Then, the phosphor portion 19 is formed by heating the precursor resin at 150°C for one hour and curing the resin material.

[0143] [Personalized Process]

[0144] Finally, as Figure 13 As shown, each of the multiple light-emitting devices 100 manufactured in a single process is individualized by cutting the tie bars from the support frame FL into element units. The light-emitting device 100 can be manufactured using the above process.

[0145] The light-emitting device 100 described in the above embodiments can be used as a light source, for example, in a surface mount (SMD) LED package or in a plastic leaded chip carrier (PLCC) LED package.

[0146] It should be understood that the foregoing description and accompanying drawings currently illustrate preferred embodiments of the invention. Of course, various modifications, additions, and alternative designs will become apparent to those skilled in the art based on the foregoing teachings without departing from the spirit and scope of the disclosed invention. Therefore, it should be understood that the invention is not limited to the disclosed examples but can be practiced within the full scope of the appended claims.

[0147] Cross-reference to related applications

[0148] This application is based on and claims priority to Japanese Patent Application No. 2024-210158, filed on December 3, 2024, the entire contents of which are incorporated herein by reference.

Claims

1. A semiconductor light-emitting device, the semiconductor light-emitting device comprising: A lead frame, the lead frame including a first electrode body having a component mounting surface and a second electrode body disposed separately from the first electrode body; A semiconductor light-emitting element, the semiconductor light-emitting element being disposed on the element mounting surface of the first electrode body; A frame body is formed above the surfaces of the first electrode body and the second electrode body, and the frame body together with the component mounting surface and the surface of the second electrode body form a recess; as well as A phosphor portion fills the recess to cover the semiconductor light-emitting element, the phosphor portion being made of a first resin material containing a first phosphor that is excited to produce fluorescence by light emitted from the semiconductor light-emitting element. Wherein, the first phosphor is a KSF phosphor, and The first resin material is phenyl silicone resin.

2. The semiconductor light-emitting device according to claim 1, wherein, A moisture-proof protective film is formed on the surface of the first phosphor.

3. The semiconductor light-emitting device according to claim 2, wherein, The protective film is made of Al2O3.

4. The semiconductor light-emitting device according to claim 1, further comprising: A sealing body portion extends from the inner surface of the frame body forming the recess to a region along the inner surface of the frame body on the surfaces of the first electrode body and the second electrode body, and is formed in a frame shape along the inner surface, the sealing body portion being made of a second resin material.

5. The semiconductor light-emitting device according to claim 4, wherein, The second resin material is silsesquioxane alkyl silicone resin.

6. The semiconductor light-emitting device according to claim 4, wherein, The sealing body has a second resin material as a base material and contains light-scattering particles.

7. The semiconductor light-emitting device according to claim 1, wherein, The phosphor portion includes a second phosphor, which produces fluorescence with a shorter wavelength compared to the first phosphor.

8. The semiconductor light-emitting device according to claim 7, wherein, The second phosphor is a β-cerone phosphor.

9. The semiconductor light-emitting device according to claim 1, wherein, The phosphor contains light-scattering particles with light-scattering properties.

10. The semiconductor light-emitting device according to claim 9, wherein, The light-scattering particles are made of YPO4.

11. The semiconductor light-emitting device according to claim 9, wherein, A moisture-proof protective film is formed on the surface of the light-scattering particles.

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