Display device, electronic device including the same, and method for manufacturing the display device

Abstract

Disclosed are a display device, an electronic device including the same, and a method for manufacturing the display device. The display device includes a substrate including a light emitting area and a non-light emitting area; an anode electrode disposed on one surface of the substrate to overlap the light emitting area; a light emitting layer disposed on the anode electrode; an element insulating layer disposed on the light emitting layer and defining an opening; a cathode electrode disposed on the element insulating layer and in contact with the light emitting layer in a portion overlapping the opening; and an insulating pattern disposed to surround the opening in a plan view and disposed between the light emitting layer and the element insulating layer, wherein the insulating pattern includes a curved portion curved in a direction perpendicular to the one surface of the substrate.

Description

[0001] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2024-0179083, filed on December 5, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] This disclosure relates to a display device, an electronic device including the display device, and a method for manufacturing the display device. Background Technology

[0003] With the development of the information society, the demand for display devices for displaying images has increased in various forms. For example, display devices are already used in various electronic devices such as smartphones, digital cameras, laptops, navigation devices, and smart TVs. Display devices can be flat panel display devices, such as liquid crystal displays, field emission displays, or organic light-emitting displays. In flat panel display devices, the light-emitting display element can include a self-illuminating light-emitting element in each pixel of the display panel, thereby displaying images without a backlight unit that provides light to the display panel.

[0004] With the recent development of various electronic devices, the demand for high-resolution display devices is increasing. Because high-resolution display devices are expected to have high pixel density, the spacing between the light-emitting elements stacked with each light-emitting area can be narrowed. Therefore, high-resolution display devices can be formed using patterning processes to form individual pixels instead of masking processes. Summary of the Invention

[0005] Embodiments of this disclosure provide a high-resolution display device having a plurality of light-emitting elements spaced apart from each other in a narrow area.

[0006] However, the embodiments of this disclosure are not limited to those set forth herein. The above and other embodiments of this disclosure will become more apparent to those skilled in the art upon reference to the detailed description of this disclosure given below.

[0007] In the disclosed embodiments, the display device includes: a substrate including a light-emitting region and a non-light-emitting region; an anode electrode disposed on a surface of the substrate and superimposed on the light-emitting region; a light-emitting layer disposed on the anode electrode; an element insulating layer disposed on the light-emitting layer and defining an opening; a cathode electrode disposed on the element insulating layer and in contact with the light-emitting layer in the portion superimposed on the opening; and an insulating pattern configured to surround the opening in a plan view and disposed between the light-emitting layer and the element insulating layer, wherein the insulating pattern includes a curved portion that bends in a direction perpendicular to a surface of the substrate.

[0008] In an embodiment, the insulating pattern may contact the light-emitting layer, the cathode electrode, and the component insulating layer, and the insulating pattern is completely surrounded by the light-emitting layer, the cathode electrode, and the component insulating layer.

[0009] In an embodiment, the length of the curved portion of the insulating pattern can be about 50 nanometers or more and about 500 nanometers or less.

[0010] In an embodiment, the insulating pattern may include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

[0011] In an embodiment, the insulating pattern may include: a first insulating pattern in contact with the light-emitting layer; and a second insulating pattern disposed between the first insulating pattern and the component insulating layer.

[0012] In an embodiment, the tensile stress value of the second insulating pattern may be greater than the tensile stress value of the first insulating pattern.

[0013] In an embodiment, a first curved portion included in a first insulating pattern and a second curved portion included in a second insulating pattern may contact each other, and the first curved portion and the second curved portion are curved in the same direction.

[0014] In one embodiment, the side surface of the insulating pattern facing the opening can be completely covered by the cathode electrode.

[0015] In an embodiment, the tilt angle formed by one surface of the substrate and the side surface of the light-emitting layer can be about 60 degrees or more and about 90 degrees or less.

[0016] In an embodiment, the element insulating layer may contact and cover the side surfaces of the insulating pattern and the light-emitting layer.

[0017] In one embodiment, the curved portion of the insulating pattern may protrude further than the side surface of the light-emitting layer in the direction toward the non-light-emitting area.

[0018] In an embodiment, the display device may further include a pixel defining layer that covers the edge of the anode electrode and defines an opening, wherein a portion of the light-emitting layer located in the opening defined by the pixel defining layer may contact the anode electrode, and a portion of the light-emitting layer exposed through the opening defined by the element insulating layer may contact the cathode electrode.

[0019] In the disclosed embodiments, a method for manufacturing a display device includes: forming a light-emitting layer and an insulating layer on a substrate including an anode electrode; removing a portion of the insulating layer and the light-emitting layer by performing a dry etching process; forming a bent portion of the insulating layer by performing an ashing process; forming an insulating pattern after forming an element insulating layer defining an opening; and forming a cathode electrode on the light-emitting layer and the element insulating layer, wherein the insulating layer includes a first insulating layer and a second insulating layer, and the tensile stress value of the second insulating layer may be greater than the tensile stress value of the first insulating layer.

[0020] In an embodiment, during the step of forming the curved portion of the insulating layer by performing an ashing process, the edges of the first insulating layer and the edges of the second insulating layer may be bent in a direction perpendicular to one surface of the substrate.

[0021] In a disclosed embodiment, an electronic device includes: a display device including a substrate, the substrate including a light-emitting region and a non-light-emitting region; and at least one selected from a display module, a processor, a memory, and a power module connected to the display device, wherein the display device includes: an anode electrode disposed on a surface of the substrate to overlap with the light-emitting region; a light-emitting layer disposed on the anode electrode; an element insulating layer disposed on the light-emitting layer and defining an opening; a cathode electrode disposed on the element insulating layer and contacting the light-emitting layer in a portion overlapping with the opening; and an insulating pattern configured to surround the opening in a plan view and disposed between the light-emitting layer and the element insulating layer, and the insulating pattern including a curved portion curved in a direction perpendicular to a surface of the substrate.

[0022] In an embodiment, the insulating pattern may contact the light-emitting layer, the cathode electrode, and the component insulating layer, and the insulating pattern is completely surrounded by the light-emitting layer, the cathode electrode, and the component insulating layer.

[0023] In an embodiment, the length of the curved portion of the insulating pattern can be about 50 nanometers or more and about 500 nanometers or less.

[0024] In an embodiment, the insulating pattern may include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

[0025] In an embodiment, the insulating pattern may include: a first insulating pattern that contacts the light-emitting layer; and a second insulating pattern that is disposed between the first insulating pattern and the component insulating layer and contacts both the first insulating pattern and the component insulating layer.

[0026] In an embodiment, the tensile stress value of the second insulating pattern may be greater than the tensile stress value of the first insulating pattern.

[0027] According to an embodiment of the display device, a high-resolution display device can be provided having a plurality of light-emitting elements arranged to be spaced apart from each other in a narrow area.

[0028] However, the effects of the embodiments are not limited to those set forth herein. The above and other effects of the embodiments will become more apparent to those skilled in the art upon which the embodiments pertain by referring to the claims. Attached Figure Description

[0029] The above and other features of the embodiments of this disclosure will become more apparent from the detailed description of the embodiments with reference to the accompanying drawings, in which: Figure 1 This is a perspective view showing a display device according to an embodiment; Figure 2 yes Figure 1 A schematic cross-sectional view of the display device; Figure 3 It is shown Figure 2 A plan view showing the arrangement of multiple pixels in the display area; Figure 4 It is along Figure 3 A schematic cross-sectional view taken by line X1-X1'; Figure 5 Is with Figure 4 An enlarged schematic cross-sectional view of the display element layer superimposed on the first light-emitting area; Figure 6 yes Figure 5 An enlarged sectional view of region "A" in the diagram; Figure 7 According to another embodiment, along Figure 3 A schematic cross-sectional view taken by line X1-X1'; Figure 8 Is with Figure 7 An enlarged schematic cross-sectional view of the display element layer superimposed on the first light-emitting area; Figure 9 According to another embodiment, along Figure 3 A schematic cross-sectional view taken by line X1-X1'; Figure 10 It shows the manufacturing process. Figure 4 A flowchart of the method for displaying the element layer; Figure 11 It is shown Figure 10 A cross-sectional view of process S100; Figures 12 to 14 It is shown Figure 10 A cross-sectional view of process S200; Figure 15 and Figure 16 It is shown Figure 10 A cross-sectional view of process S300; Figures 17 to 20 It is shown Figure 10 A cross-sectional view of the S400 process; Figure 21 It is shown Figure 10 A cross-sectional view of the S500 process; Figure 22 This is a block diagram of an electronic device according to an embodiment; and Figure 23 Schematic diagrams of electronic devices according to various embodiments are shown. Detailed Implementation

[0030] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout refer to the same elements.

[0031] It will be understood that when an element is referred to as being "on" another element, it can be directly on said other element, or there can be an intermediary element between them. Conversely, when an element is referred to as being "directly on" another element, there is no intermediary element.

[0032] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, without departing from the teaching herein, “first element,” “first component,” “first region,” “first layer,” or “first part” discussed below may be referred to as a second element, second component, second region, second layer, or second part.

[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms that include “at least one.” Thus, an element mentioned in the claims and subsequently referenced as “the” includes one element and multiple elements. For example, unless the context clearly indicates otherwise, “an element” has the same meaning as “at least one element.” “At least one” should not be construed as limited to “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will also be understood that when the terms “comprising” or “including” and / or variations thereof are used in this specification, it indicates the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or groups thereof.

[0034] Furthermore, relative terms such as “below” or “bottom” and “above” or “top” may be used herein to describe the relationship between one element and another as shown in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the relative terms are intended to also include different orientations of the device. For example, if the device in one of the drawings is flipped, an element described as being “below” the other element will subsequently be oriented “above” the other element. Thus, depending on the specific orientation of the drawing, the term “below” can include both “below” and “above” orientations. Similarly, if the device in one of the drawings is flipped, an element described as being “below” or “under” the other element will subsequently be positioned “above” the other element. Thus, the terms “below” or “under” can include both “above” and “below” orientations.

[0035] As used herein, “about” or “approximately” includes the stated value and means: within an acceptable range of deviation from the stated value, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system), as determined by one of ordinary skill in the art. For example, a term such as “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0036] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms (such as those defined in a general dictionary) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and the disclosure, and shall not be interpreted in an idealized or overly formal sense, unless expressly defined herein.

[0037] The embodiments are described herein with reference to cross-sectional views, which are schematic representations of idealized embodiments. Thus, variations in the illustrated shapes are expected, for example, due to manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but will include, for example, deviations in shape caused by manufacturing processes. For example, areas shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the areas, nor are they intended to limit the scope of the presented claims.

[0038] In the following description, embodiments will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 This is a perspective view showing a display device according to an embodiment.

[0040] Reference Figure 1 Embodiments of display device 10 display moving or still images. Display device 10 can refer to any electronic device that provides a display screen. For example, display device 10 may include televisions, laptops, monitors, billboards, Internet of Things devices, mobile phones, smartphones, tablet PCs, electronic watches, smartwatches, watch phones, head-mounted displays, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigators, game consoles, digital cameras, camcorders, etc.

[0041] exist Figure 1In this document, a first direction (X-axis direction), a second direction (Y-axis direction), and a third direction (Z-axis direction) are defined. The first direction (X-axis direction) and the second direction (Y-axis direction) can be perpendicular to each other, the first direction (X-axis direction) and the third direction (Z-axis direction) can be perpendicular to each other, and the second direction (Y-axis direction) and the third direction (Z-axis direction) can be perpendicular to each other. It is understood that the first direction (X-axis direction) represents the horizontal direction in the drawing, the second direction (Y-axis direction) represents the vertical direction in the drawing, and the third direction (Z-axis direction) represents the up-down direction in the drawing, i.e., the thickness direction of the display device 10. In the following description, unless otherwise stated, the term "direction" can refer to two directions extending towards opposite sides along that direction. Furthermore, when two "directions" extend to opposite sides to distinguish them from each other, one side will be referred to as "one side in that direction," and the other side will be referred to as "the other side in that direction." Figure 1 In Chinese, the direction pointed to by the arrow indicating direction is called one side, and the opposite direction is called the other side.

[0042] In the following description, for ease of description, when referring to the surface of each component constituting the display device 10, the surface facing the direction of displaying the image (i.e., in the third direction (Z-axis direction)) is referred to as the upper surface, and the surface opposite to said one surface is referred to as the other surface. However, this disclosure is not limited thereto, and one surface and the other surface of the component may be referred to as the front surface and the rear surface, respectively, or may also be referred to as the first surface and the second surface. In addition, when describing the relative position of each component of the display device 10, the side in the third direction (Z-axis direction) may be referred to as the upper side, and the other side in the third direction (Z-axis direction) may be referred to as the lower side.

[0043] The shape (or planar shape) of the display device 10 can be varied. In embodiments, for example, the display device 10 can have a shape such as a rectangle with a long width, a rectangle with a long length, a square, a quadrilateral with rounded corners (vertices), other polygons, or a circle.

[0044] In an embodiment, the display device 10 may include a display panel 100, a display driver 200, a circuit board 300, and a touch driver 400.

[0045] The display panel 100 may include a main region MA and a sub-region SBA. The main region MA may include a display region DA and a non-display region NDA. The display region DA includes pixels for displaying images, and the non-display region NDA is arranged around the display region DA. The main region MA and the sub-region SBA may include flexible materials that can be bent, folded, rolled, etc.

[0046] The display area DA is the area where images can be displayed, and the non-display area NDA is the area where images are not displayed. The display area DA can also be referred to as the active area, and the non-display area NDA can also be referred to as the inactive area. The display area DA typically occupies the center of the display device 10. The non-display area NDA can be the area outside the display area DA. The non-display area NDA can be defined as the edge (or periphery) area of ​​the display panel 100. The non-display area NDA may include lines supplying signals to the display area DA and lines connecting the display driver 200 and the display area DA.

[0047] A sub-region SBA can be a region extending from one side of a main region MA. When the sub-region SBA is curved, it can overlap with the main region MA in the thickness direction (e.g., the third direction (Z-axis direction)). The sub-region SBA may include a display driver 200 and a display pad (or "solder pad") connected to the circuit board 300. In another embodiment, the sub-region SBA may be omitted, and the display driver 200 and the display pad may be positioned or disposed in a non-display area NDA.

[0048] The display driver 200 can output signals and voltages for driving the display panel 100. The display driver 200 can be formed as an integrated circuit (IC) and mounted on the display panel 100 using a chip-on-glass (COG) method, a chip-on-plastic (COP) method, or an ultrasonic bonding method. In one embodiment, for example, the display driver 200 can be arranged in a sub-region SBA and can be stacked with the main region MA in the thickness direction by bending the sub-region SBA. In another embodiment, for example, the display driver 200 can be mounted on a circuit board 300.

[0049] The circuit board 300 can be attached to the display pad of the display panel 100 using an anisotropic conductive film (ACF). The circuit board 300 can be electrically connected to the display pad. The circuit board 300 can be a flexible printed circuit board, a rigid printed circuit board, or a flexible film such as a chip on film.

[0050] The touch driver 400 can be mounted on the circuit board 300. The touch driver 400 can be connected to the touch sensor layer of the display panel 100. Figure 2 (180 in the text).

[0051] Figure 2 yes Figure 1 A schematic cross-sectional view of the display device.

[0052] Reference Figure 2An embodiment of the display panel 100 may include a display layer DPL, a touch sensor layer 180, and a color filter layer 190. The display layer DPL may include a substrate 110, a thin-film transistor layer 130, a display element layer 150, and a thin-film encapsulation layer 170.

[0053] The substrate 110 may be a matrix substrate or a matrix component. The substrate 110 may be a flexible substrate that can be bent, folded, rolled, etc. In embodiments, for example, the substrate 110 may include, but is not limited to, a polymer resin such as polyimide (PI). In another embodiment, the substrate 110 may include a glass material or a metal material.

[0054] Thin-film transistor layer 130 may be positioned (or disposed) on substrate 110. Thin-film transistor layer 130 may be positioned in a portion superimposed with display area DA, non-display area NDA, and sub-region SBA. Thin-film transistor layer 130 may include multiple thin-film transistors (…). Figure 7 (TFT in the text).

[0055] The display element layer 150 may be positioned on the thin-film transistor layer 130. The display element layer 150 may be positioned in a portion superimposed on the display area DA. The display element layer 150 may include, but is not limited to, at least one selected from organic light-emitting diodes (LEDs) including organic light-emitting layers, quantum dot LEDs including quantum dot light-emitting layers, inorganic LEDs including inorganic semiconductors, and microLEDs.

[0056] A thin-film encapsulation layer 170 may be positioned on the display element layer 150. The thin-film encapsulation layer 170 may be positioned in the portion overlapping the display area DA and the non-display area NDA. The thin-film encapsulation layer 170 may cover the upper and side surfaces of the display element layer 150 and may protect the display element layer 150 from external oxygen and moisture. The thin-film encapsulation layer 170 may include at least one inorganic film and at least one organic film for encapsulating the display element layer 150.

[0057] Touch sensor layer 180 can be positioned on thin-film encapsulation layer 170. Touch sensor layer 180 can be positioned in the portion superimposed with display area DA and non-display area NDA. Touch sensor layer 180 can sense user touch using mutual capacitance or self-capacitance methods.

[0058] A color filter layer 190 can be positioned on the touch sensor layer 180. The color filter layer 190 can be positioned in the portion overlapping the display area DA and the non-display area NDA. The color filter layer 190 can absorb a portion of the light introduced from the outside of the display device 10 to reduce reflected light caused by external light. Therefore, the color filter layer 190 can effectively prevent color distortion caused by the reflection of external light.

[0059] Since the color filter layer 190 is disposed directly on the touch sensor layer 180, the display device 10 may not require a separate substrate for the color filter layer 190. Therefore, the display device 10 can have a relatively small thickness. According to an embodiment, the color filter layer 190 may also be omitted.

[0060] In an embodiment, such as Figure 2 As shown, the portion of the display layer DPL that overlaps with the sub-region SBA can be bent. With a portion of the display layer DPL bent, the display driver 200, the circuit board 300, and the touch driver 400 can overlap with the main region MA in the third direction (Z-axis direction).

[0061] Figure 3 It is shown Figure 2 A plan view showing the arrangement of multiple pixels in the display area.

[0062] Reference Figure 3 In an embodiment, multiple pixels PX may be set or formed in a portion that overlaps with the display area DA.

[0063] In an embodiment, pixel PX may include a light-emitting region EA defined by an opening OP. The opening OP will be described later.

[0064] The light-emitting region EA may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3 that emit light of different colors respectively. In an embodiment, the first light-emitting region EA1 may emit red light of a first color, the second light-emitting region EA2 may emit green light of a second color, and the third light-emitting region EA3 may emit blue light of a third color, but this disclosure is not limited thereto.

[0065] In some embodiments, a first sub-pixel SP1 comprising at least one first emitting region EA1, a second sub-pixel SP2 comprising at least one second emitting region EA2, and a third sub-pixel SP3 comprising at least one third emitting region EA3 arranged adjacent to each other can construct or jointly define a pixel group PXG. The pixel group PXG can be the smallest unit emitting white light. However, the type and / or number of emitting regions EA constituting the pixel group PXG can be varied or modified according to embodiments.

[0066] In an embodiment, such as Figure 3 As shown, the size and shape of each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may be identical to each other, but this disclosure is not limited thereto. In embodiments, the size and shape of each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 can be freely adjusted according to desired characteristics.

[0067] According to an embodiment, the non-emitting region NLA can be positioned around each of the first emitting region EA1, the second emitting region EA2, and the third emitting region EA3, either in a plan view or when viewed in a third direction (i.e., the Z-axis direction). The non-emitting region NLA can help prevent the mixing of light emitted from each of the first emitting region EA1, the second emitting region EA2, and the third emitting region EA3.

[0068] Figure 4 It is along Figure 3 A schematic cross-sectional view taken by line X1-X1'. Figure 4 It is a display device and Figure 3 A cross-sectional view of the overlapping portion of the display area, showing a schematic cross-section of the display element layer.

[0069] Reference Figure 4 In this embodiment, the thin-film transistor layer 130 may be positioned (or disposed) on the substrate 110. The thin-film transistor layer 130 may include a first buffer layer 111, a thin-film transistor TFT, a gate insulating layer 113, a first interlayer insulating layer 121, a capacitor electrode CPE, a second interlayer insulating layer 123, a first connection electrode CNE1, a first via layer 125, a second connection electrode CNE2, and a second via layer 127.

[0070] A first buffer layer 111 may be positioned on a substrate 110. The first buffer layer 111 may include an inorganic membrane capable of preventing the penetration of air or moisture. In an embodiment, for example, the first buffer layer 111 may include a plurality of inorganic membranes stacked alternately.

[0071] Thin-film transistors (TFTs) can be disposed on the first buffer layer 111 and can form a pixel circuit connected to each of a plurality of pixels. In embodiments, for example, the thin-film transistor TFT can be a driving transistor or a switching transistor of the pixel circuit. The thin-film transistor TFT may include an active layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0072] The active layer ACT can be positioned on the first buffer layer 111. The active layer ACT can be stacked with the gate electrode GE in the third direction (Z-axis direction) and can be insulated from the gate electrode GE by the gate insulating layer 113. In a portion of the active layer ACT, the material of the active layer ACT can be made into a conductor to form the source electrode SE and the drain electrode DE.

[0073] The gate electrode GE can be positioned on the gate insulating layer 113. The gate electrode GE can be stacked with the active layer ACT, and the gate insulating layer 113 is placed between the gate electrode GE and the active layer ACT.

[0074] The gate insulating layer 113 can be positioned on the active layer ACT. The gate insulating layer 113 can cover the active layer ACT and the first buffer layer 111, and can insulate the active layer ACT and the gate electrode GE from each other. The gate insulating layer 113 can be provided with a contact hole through which the first connection electrode CNE1 extends or is disposed.

[0075] The first interlayer insulating layer 121 may cover the gate electrode GE and the gate insulating layer 113. The first interlayer insulating layer 121 may be provided with a contact hole through which the first connection electrode CNE1 extends or is disposed. The contact hole of the first interlayer insulating layer 121 may be connected to the contact hole of the gate insulating layer 113 and the contact hole of the second interlayer insulating layer 123.

[0076] The capacitor electrode CPE can be positioned on the first interlayer insulating layer 121. The capacitor electrode CPE can be stacked with the gate electrode GE in the third direction (Z-axis direction). The capacitor electrode CPE and the gate electrode GE can form a capacitor.

[0077] The second interlayer insulating layer 123 may cover the capacitor electrode CPE and the first interlayer insulating layer 121. The second interlayer insulating layer 123 may be provided with contact holes through which the first connection electrode CNE1 extends or is disposed. The contact holes of the second interlayer insulating layer 123 may be connected to the contact holes of the first interlayer insulating layer 121 and the contact holes of the gate insulating layer 113.

[0078] The first connection electrode CNE1 can be positioned on the second interlayer insulating layer 123. The first connection electrode CNE1 can electrically connect the drain electrode DE of the thin-film transistor TFT and the second connection electrode CNE2 to each other. The first connection electrode CNE1 can be inserted into a contact hole formed in the first interlayer insulating layer 121, the second interlayer insulating layer 123 and the gate insulating layer 113, and contact the drain electrode DE of the thin-film transistor TFT.

[0079] The first via layer 125 can cover the first connecting electrode CNE1 and the second interlayer insulating layer 123. The first via layer 125 can planarize the lower structure. The first via layer 125 can be provided with contact holes through which the second connecting electrode CNE2 extends or is disposed.

[0080] The second connecting electrode CNE2 can be positioned on the first via layer 125. The second connecting electrode CNE2 can be inserted into a contact hole formed in the first via layer 125 and contact the first connecting electrode CNE1. The second connecting electrode CNE2 can electrically connect the first connecting electrode CNE1 and the anode electrode AE ​​to each other.

[0081] The second via layer 127 may cover the second connecting electrode CNE2 and the first via layer 125. The second via layer 127 may be provided with contact holes through which the anode electrode AE ​​extends or is disposed.

[0082] The display element layer 150 may be positioned on the second via layer 127. The display element layer 150 may include a light-emitting element ED, a pixel defining layer 151, an element insulating layer 155, and an insulating pattern 160.

[0083] The light-emitting area EA included in the display device 10 may be defined by an opening OP. The opening OP may include an opening OP1 defined by the pixel defining layer 151 and an opening OP2 defined by the insulating pattern 160. The opening OP will be described later.

[0084] The light-emitting element ED may include a first light-emitting element ED1 arranged in a first light-emitting region EA1, a second light-emitting element ED2 arranged in a second light-emitting region EA2, and a third light-emitting element ED3 arranged in a third light-emitting region EA3.

[0085] The first light-emitting element ED1 may include a first anode electrode AE1, a first light-emitting layer EL1, and a cathode electrode CE; the second light-emitting element ED2 may include a second anode electrode AE2, a second light-emitting layer EL2, and a cathode electrode CE; and the third light-emitting element ED3 may include a third anode electrode AE3, a third light-emitting layer EL3, and a cathode electrode CE. The cathode electrode CE may be a common electrode.

[0086] Light-emitting elements ED, which are superimposed on the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 respectively, can emit light of different colors depending on the material of the light-emitting layer EL. In an embodiment, for example, the first light-emitting element ED1 can emit red light, the second light-emitting element ED2 can emit green light, and the third light-emitting element ED3 can emit blue light.

[0087] The anode electrode AE ​​can be positioned on the second via layer 127. The anode electrode AE ​​can be electrically connected to the drain electrode DE of the thin-film transistor TFT via the first connection electrode CNE1 and the second connection electrode CNE2.

[0088] The anode electrode AE ​​may include a first anode electrode AE1 disposed in a first light-emitting region EA1, a second anode electrode AE2 disposed in a second light-emitting region EA2, and a third anode electrode AE3 disposed in a third light-emitting region EA3. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be positioned spaced apart from each other.

[0089] The anode electrode AE ​​may have a stacked film structure in which a material layer with a high work function and a reflective material layer are stacked. The material layer includes indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3), or is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3). The reflective material layer includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof, or is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof. In embodiments, for example, the anode electrode AE ​​may have a multilayer structure of ITO / Mg, ITO / MgF2, ITO / Ag, and ITO / Ag / ITO, but is not limited thereto.

[0090] In one embodiment, the pixel defining layer 151 may be positioned to contact the second via layer 127 in the portion overlapping with the non-light-emitting region NLA. The pixel defining layer 151 may cover the edge of the anode electrode AE.

[0091] The pixel defining layer 151 can define an opening OP1, that is, the opening OP1 can be defined to pass through the pixel defining layer 151. The pixel defining layer 151 can be positioned around the opening OP1. The pixel defining layer 151 can expose the anode electrode AE ​​in the portion that overlaps with the opening OP1.

[0092] The pixel limiting layer 151 can insulate and separate the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 from each other.

[0093] The pixel defining layer 151 may include an inorganic insulating material. In an embodiment, for example, the pixel defining layer 151 may include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

[0094] In one embodiment, the light-emitting layer EL can be positioned on the anode electrode AE. The light-emitting layer EL can contact the anode electrode AE ​​in the portion overlapping with the opening OP1, and can be positioned on the pixel defining layer 151 in the portion not overlapping with the opening OP1.

[0095] The light-emitting layer EL may include a first light-emitting layer EL1, a second light-emitting layer EL2, and a third light-emitting layer EL3, respectively disposed in a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 may emit light of different colors. In an embodiment, for example, the first light-emitting layer EL1 may emit red light, the second light-emitting layer EL2 may emit green light, and the third light-emitting layer EL3 may emit blue light; however, this disclosure is not limited thereto.

[0096] The luminescent layer (EL) can be formed during the manufacturing process using photolithography. In other words, the EL can be formed using photolithography and etching processes without the use of a separate fine metal mask. The manufacturing process of the EL will be described later.

[0097] Typically, display devices used in high-resolution products may have multiple light-emitting elements (EDs) formed within a narrow area. This can mean that the distance between the multiple EDs is very narrow. Therefore, setting the multiple EDs to have a minimum spacing can be a key factor in high-resolution displays.

[0098] The display device 10 according to the embodiment can effectively provide multiple light-emitting layers EL in a minimum area by forming a light-emitting layer EL included in the light-emitting element ED via a photolithography process. In other words, the display device 10 according to the embodiment can minimize the spacing W1 between the first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 by forming a light-emitting layer EL included in the light-emitting element ED via a photolithography process.

[0099] The component insulating layer 155 can be positioned on the pixel defining layer 151 and the light-emitting layer EL. The component insulating layer 155 can cover the edge of the light-emitting layer EL. The component insulating layer 155 can be in contact with the pixel defining layer 151 and the light-emitting layer EL.

[0100] The component insulating layer 155 may define the opening OP2. The component insulating layer 155 may be positioned around the opening OP2. The component insulating layer 155 may expose the light-emitting layer EL in the portion overlapping with the opening OP2.

[0101] The component insulating layer 155 may include an inorganic insulating material. In an embodiment, for example, the component insulating layer 155 may include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

[0102] The cathode electrode CE can be positioned on the light-emitting layer EL and the element insulating layer 155. The cathode electrode CE can contact the light-emitting layer EL in the portion overlapping with the opening OP2, and can cover the element insulating layer 155 and the pixel defining layer 151 in the portion not overlapping with the opening OP2. In other words, the cathode electrode CE can be completely formed on the first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3, and can be a common electrode.

[0103] The cathode electrode CE can receive either a common voltage or a low potential voltage. Specifically, when the anode electrode AE ​​receives a voltage corresponding to the data voltage and the cathode electrode CE receives a low potential voltage, the light-emitting layer EL can emit light when a potential difference is formed between the anode electrode AE ​​and the cathode electrode CE.

[0104] The insulating pattern 160 can be positioned on the light-emitting layer EL. In an embodiment, the insulating pattern 160 can be positioned in a third direction (Z-axis direction) between the light-emitting layer EL and the component insulating layer 155. The insulating pattern 160 can be positioned around the opening OP2.

[0105] In the cross-section, the insulating pattern 160 can contact the light-emitting layer EL, the component insulating layer 155, and the cathode electrode CE, and can be completely surrounded by the light-emitting layer EL, the component insulating layer 155, and the cathode electrode CE.

[0106] The insulating pattern 160 can be formed to protect the light-emitting layer EL from repeated etching processes during the manufacturing process of the display device 10. Therefore, the insulating pattern 160 can be temporarily formed during the manufacturing process of the display device 10 to completely cover the upper surface of the light-emitting layer EL, and then formed into the shape shown by subsequent processes.

[0107] In one embodiment, the insulating pattern 160 may include a curved portion that bends to one side in a third direction (Z-axis direction).

[0108] In an embodiment, for example, if the insulating pattern 160 is formed to protrude further than the side surface of the light-emitting layer EL in a direction parallel to the first direction (X-axis direction), this can increase the spacing W1 between the first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3. Therefore, the display device 10 according to the embodiment can help minimize the spacing W1 between the first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 by forming the insulating pattern 160 to bend to one side in the third direction (Z-axis direction). The shape of the insulating pattern 160 will be described later.

[0109] The insulating pattern 160 may include a first insulating pattern 161 and a second insulating pattern 163. The first insulating pattern 161 may be positioned to contact the light-emitting layer EL, and the second insulating pattern 163 may be positioned to contact the first insulating pattern 161 and the component insulating layer 155 between the first insulating pattern 161 and the component insulating layer 155.

[0110] The first insulating pattern 161 may include an inorganic insulating material. In an embodiment, for example, the first insulating pattern 161 may include at least one selected from silicon nitride, silicon oxynitride, and silicon oxide.

[0111] The second insulating pattern 163 may include an inorganic insulating material. In an embodiment, for example, the second insulating pattern 163 may include at least one selected from silicon nitride, silicon oxynitride, and silicon oxide.

[0112] The thin-film encapsulation layer 170 can be positioned on the display element layer 150. The thin-film encapsulation layer 170 can be positioned in the portion overlapping the light-emitting region EA and the non-light-emitting region NLA. The thin-film encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175 stacked in sequence.

[0113] The first encapsulation layer 171 can be positioned on the cathode electrode CE. The first encapsulation layer 171 can have a uniform thickness according to the contour of the underlying structure and can cover the underlying structure. Therefore, the first encapsulation layer 171 can include a step or a stepped structure.

[0114] The first encapsulation layer 171 can effectively prevent oxygen or moisture from penetrating into the light-emitting element ED.

[0115] The first encapsulation layer 171 may include an inorganic insulating material, for example, at least one selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0116] The second encapsulation layer 173 can be positioned on the first encapsulation layer 171. The second encapsulation layer 173 can flatten the step formed by the first encapsulation layer 171. In addition, the second encapsulation layer 173 can protect the display element layer 150 from the influence of foreign substances.

[0117] The second encapsulation layer 173 may include a polymeric material. In embodiments, for example, the second encapsulation layer 173 may include a silicone resin, an acrylic resin, an epoxy resin, or a mixture thereof.

[0118] The third encapsulation layer 175 may be positioned on the second encapsulation layer 173. The third encapsulation layer 175 may include one or more inorganic insulating materials and may effectively prevent oxygen or moisture from penetrating into the display element layer 150 and the first encapsulation layer 171. The third encapsulation layer 175 may include the same material as the first encapsulation layer 171. Any repeated detailed descriptions of the material of the third encapsulation layer 175 will be omitted.

[0119] Figure 5 Is with Figure 4 An enlarged schematic cross-sectional view of the display element layer superimposed on the first light-emitting area. Figure 6 yes Figure 5 An enlarged sectional view of region "A" in the image.

[0120] Reference Figure 5 and Figure 6 According to the embodiment, the display element layer 150 may include a first light-emitting element ED1, a pixel defining layer 151, an element insulating layer 155 and an insulating pattern 160 in the portion superimposed with the first light-emitting region EA1.

[0121] The first light-emitting layer EL1 included in the first light-emitting element ED1 may include an upper surface e1 and a side surface e3. The upper surface e1 may be a surface facing the cathode electrode CE, and the side surface e3 may be a surface facing the element insulating layer 155 facing the non-light-emitting region NLA. The upper surface e1 and the side surface e3 may be connected to each other.

[0122] In an embodiment, the side surface e3 of the first light-emitting layer EL1 may be a sloped surface. The side surface e3 of the first light-emitting layer EL1 may have a high taper angle. In an embodiment, for example, the slope angle θe formed by the side surface e3 of the first light-emitting layer EL1 and a surface of the pixel defining layer 151 may be in the range of about 60 degrees or more to about 90 degrees or less.

[0123] In the embodiment, as described above, the light-emitting layer EL can be formed by photolithography. Therefore, the first light-emitting layer EL1 can have a side surface e3, which has a substantially predetermined shape without tail defects (or elongated, tail-like extensions) caused by mask shadows.

[0124] According to the contact structure, the upper surface e1 of the first light-emitting layer EL1 may include a first portion e1a and a second portion e1b. The first portion e1a may be the portion in contact with the cathode electrode CE, and the second portion e1b may be the portion in contact with the insulating pattern 160. The second portion e1b may be in contact with the first insulating pattern 161 of the insulating pattern 160.

[0125] The first part e1a can be positioned at the center of the upper surface e1, and the second part e1b can be positioned at the edge of the upper surface e1 or defining the edge portion of the upper surface e1. The second part e1b can be positioned around the first part e1a in a plan view or when viewed in a third direction (Z-axis direction).

[0126] In the embodiments described above, the first insulating pattern 161 and the second insulating pattern 163 may include inorganic insulating materials.

[0127] In one embodiment, the tensile stress (value) in the second insulating pattern 163 may be greater than the tensile stress (value) in the first insulating pattern 161. In another embodiment, for example, when the first insulating pattern 161 is an inorganic material exhibiting compressive stress properties, the second insulating pattern 163 may have a tensile stress value of approximately zero (0) or greater. In yet another embodiment, for example, when the first insulating pattern 161 is an inorganic material exhibiting tensile stress properties, the second insulating pattern 163 may have a tensile stress with an absolute value greater than the absolute value of the tensile stress in the first insulating pattern 161.

[0128] In an embodiment, such as Figure 6 As shown, the first insulating pattern 161 included in the insulating pattern 160 may have a flat portion 161p and a curved (or bent) portion 161b. The flat portion 161p and the curved portion 161b are integrally formed as a single, indivisible part, but may have different positional shapes. In embodiments, for example, the flat portion 161p may be positioned or extended in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and the curved portion 161b may be positioned or extended in a third direction (Z-axis direction) or in a direction perpendicular to the substrate 110. In other words, the first insulating pattern 161 may have an "L" shape or a shape mirror-symmetrical to an "L" shape.

[0129] In this embodiment, the flat portion 161p may contact the first light-emitting layer EL1. The flat portion 161p may include a side surface 1pc facing or defining the opening OP2. The side surface 1pc of the flat portion 161p may contact the cathode electrode CE and may be completely covered by the cathode electrode CE.

[0130] In one embodiment, the curved portion 161b may extend from the flat portion 161p and may not contact the first light-emitting layer EL1. The curved portion 161b may contact the element insulating layer 155.

[0131] In an embodiment, the bent portion 161b may include a first surface 1ba. The first surface 1ba of the bent portion 161b may be a surface of the bent portion 161b that contacts the element insulating layer 155.

[0132] In an embodiment, at the point where the first surface 1ba of the curved portion 161b and the side surface e3 of the first light-emitting layer EL1 meet each other, the tilt angle θp formed by the first surface 1ba of the curved portion 161b and the side surface e3 of the first light-emitting layer EL1 can be an obtuse angle.

[0133] In the manufacturing process of the display device 10, the bent portion 161b can be temporarily positioned in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and then bent toward one side in a third direction (Z-axis direction) after undergoing an ashing process. Figure 15 In other words, in the process of manufacturing the display device 10, the curved portion 161b can be extended and connected from the flat portion 161p in a first direction (X-axis direction), and then bent toward one side in a third direction (Z-axis direction) by a subsequent process. Its manufacturing process will be described in more detail later.

[0134] In an embodiment, the length L1b of the curved portion 161b of the first insulating pattern 161 in the third direction (Z-axis direction) may have a value of about 50 nanometers or more and about 500 nanometers or less. For example, if the length L1b of the curved portion 161b has a value of about 50 nanometers or less or about 500 nanometers or more, the shape of the curved portion 161b may not be formed as shown, that is, the shape of the curved portion 161b may be different from the shape described above.

[0135] In an embodiment, the second insulating pattern 163 may have a flat portion 163p and a curved portion 163b. The flat portion 163p and the curved portion 163b are integrally formed as a single, indivisible part, but may have different positional shapes. In an embodiment, for example, the flat portion 163p may be positioned or extended in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and the curved portion 163b may be positioned or extended in a third direction (Z-axis direction) or in a direction perpendicular to the substrate 110.

[0136] The second insulating pattern 163 may have a shape similar to the first insulating pattern 161. In other words, the second insulating pattern 163 may have an "L" shape or a shape that is mirror-symmetrical to an "L" shape.

[0137] In one embodiment, the flat portion 163p may include a side surface 3pc facing the opening OP2. The side surface 3pc of the flat portion 163p may contact the cathode electrode CE and may be completely covered by the cathode electrode CE.

[0138] In an embodiment, the side surface 3pc of the flat portion 163p included in the second insulating pattern 163 and the side surface 1pc of the flat portion 161p included in the first insulating pattern 161 can be positioned on the same plane. As described above, being positioned on the same plane can have the same meaning as being aligned on the same plane and / or substantially positioned on an extended imaginary plane.

[0139] In one embodiment, the curved portion 163b may extend from the flat portion 163p and may contact the curved portion 161b. The curved portion 163b included in the second insulating pattern 163 may be bent in the same direction as the curved portion 161b included in the first insulating pattern 161.

[0140] In the manufacturing process of the display device 10, the bent portion 163b can be temporarily positioned in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and then bent towards the side in a third direction (Z-axis direction) by a subsequent ashing process. Figure 15 In other words, in the process of manufacturing the display device 10, the curved portion 163b can be extended and connected from the flat portion 163p in a first direction (X-axis direction), and then bent toward one side in a third direction (Z-axis direction) by a subsequent process. Its manufacturing process will be described in more detail later.

[0141] In an embodiment, the length L3b of the curved portion 163b of the second insulating pattern 163 in the third direction (Z-axis direction) may have a value of about 50 nanometers or more and about 500 nanometers or less. For example, if the length L3b of the curved portion 163b has a value of about 50 nanometers or less or about 500 nanometers or more, the shape of the curved portion 163b may not be formed as shown, that is, the shape of the curved portion 163b may be different from the shape described above.

[0142] In this embodiment, the component insulating layer 155 may conformally cover the insulating pattern 160 with a uniform thickness. However, the meaning of uniform thickness as described above may include 10% or less of process tolerance.

[0143] The component insulating layer 155 may contact and cover the insulating pattern 160, extend from the insulating pattern 160 to cover the side surface e3 of the first light-emitting layer EL1, and extend from the side surface e3 of the first light-emitting layer EL1 to cover a portion of the pixel defining layer 151. The component insulating layer 155 may completely cover the side surface e3 of the first light-emitting layer EL1.

[0144] The component insulating layer 155 can be used to effectively prevent the light-emitting layer EL from being exposed to the atmosphere or environment during the manufacturing process of the display device 10. Its manufacturing process will be described later.

[0145] In an embodiment, the cathode electrode CE may completely cover the element insulating layer 155 in the portion not overlapping with the opening OP2, and may extend from the element insulating layer 155 to cover the pixel defining layer 151.

[0146] According to an embodiment, the first encapsulation layer 171 can completely cover the cathode electrode CE, and the second encapsulation layer 173 can flatten the step (or step structure) formed by the first encapsulation layer 171. Any repeated detailed descriptions will be omitted.

[0147] Although for ease of description, the features (or structure and characteristics) of the display element layer 150 located in the portion superimposed with the first light-emitting region EA1 are shown and described above, it will be understood that the features of the display element layer 150 located in the portion superimposed with the second light-emitting region EA2 and the third light-emitting region EA3 may be the same as the features of the display element layer 150 located in the portion superimposed with the first light-emitting region EA1.

[0148] Figure 7 According to another embodiment, along Figure 3 A schematic cross-sectional view taken by line X1-X1'. Figure 8 Is with Figure 7 An enlarged schematic cross-sectional view of the display element layer superimposed on the first light-emitting area.

[0149] Apart from Figures 1 to 6 In addition, refer to Figure 7 and Figure 8 The light-emitting area EA in the display device 30 may be defined by an opening OP. The opening OP may include an opening OP1 defined by the pixel defining layer 151 and an opening OP3 defined by the insulating pattern 160.

[0150] The insulating pattern 160 included in the display device 30 may have a different shape than the insulating pattern 160 included in the display device 10. In the following description, any repetitive detailed description of the same structure of the display device 30 as that of the display device 10 will be omitted, and the different structures will be described primarily.

[0151] In an embodiment, such as Figure 8 As shown, the first light-emitting layer EL1 included in the display device 30 may include an upper surface e1 and a side surface e3. The upper surface e1 may be a surface facing the cathode electrode CE, and the side surface e3 may be a surface facing the element insulating layer 155 in the portion facing the non-light-emitting region NLA. The upper surface e1 and the side surface e3 may be connected to each other.

[0152] The side surface e3 of the first light-emitting layer EL1 may be an inclined surface. The side surface e3 of the first light-emitting layer EL1 may have a high taper angle. In an embodiment, for example, the inclination angle θe formed by the side surface e3 of the first light-emitting layer EL1 and a surface of the pixel defining layer 151 may be in the range of about 60 degrees or more to about 90 degrees or less. The aforementioned surface of the pixel defining layer 151 may be a surface extending in a first direction (X-axis direction).

[0153] The upper surface e1 of the first light-emitting layer EL1 may have a portion that contacts the cathode electrode CE and a portion that contacts the insulating pattern 160. Any repeated detailed descriptions thereof will be omitted.

[0154] The insulating pattern 160 included in the display device 30 may define the opening OP3. The insulating pattern 160 may be positioned around the opening OP3. The insulating pattern 160 may expose the light-emitting layer EL in the portion overlapping with the opening OP3.

[0155] In an embodiment, such as Figure 7 As shown, the opening OP1 defined by the pixel defining layer 151 and the opening OP3 defined by the insulating pattern 160 are identical to each other, but this disclosure is not limited thereto.

[0156] The tensile stress in the second insulating pattern 163 can be greater than the tensile stress in the first insulating pattern 161. Any repeated detailed descriptions thereof will be omitted.

[0157] Therefore, the first insulating pattern 161 and the second insulating pattern 163 included in the display device 30 may include a curved portion that bends toward one side in the third direction (Z-axis direction).

[0158] The first insulating pattern 161 included in the display device 30 may include a bent (or folded) portion 161b. In an embodiment, for example, the first bent portion 161b may be bent toward one side in a third direction (Z-axis direction).

[0159] The curved portion 161b included in the display device 30 may include a first surface 1bu. The first surface 1bu of the curved portion 161b may be a surface facing the pixel defining layer 151. The first surface 1bu may be curved, and the slope of the first surface 1bu may decrease (or decrease) as it moves toward the light-emitting region EA.

[0160] At the point where the first surface 1bu of the curved portion 161b included in the display device 30 and the side surface e3 of the first light-emitting layer EL1 meet each other, the tilt angle θu formed by the first surface 1bu of the curved portion 161b included in the display device 30 and the side surface e3 of the first light-emitting layer EL1 can be an obtuse angle.

[0161] In the manufacturing process of the display device 30, the bent portion 161b included in the display device 30 can be temporarily positioned in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and then bent towards one side in a third direction (Z-axis direction) by a subsequent ashing process. Figure 15 ).

[0162] The tensile stress values ​​of the second insulating pattern 163 and the first insulating pattern 161 included in the display device 30 may be different from each other. In other words, the bending shape of the insulating pattern 160 included in the display device 10 and the bending shape of the insulating pattern 160 included in the display device 30 may vary depending on the tensile stress of the first insulating pattern 161 and the second insulating pattern 163 included in each display device.

[0163] The length L1b' of the curved portion 161b of the first insulating pattern 161 included in the display device 30 may have a value of about 50 nanometers or greater and about 500 nanometers or less. Any repeated detailed descriptions thereof will be omitted.

[0164] The second insulating pattern 163 included in the display device 30 may include a bent portion 163b. In an embodiment, for example, the bent portion 163b may be bent toward one side in a third direction (Z-axis direction).

[0165] The second insulating pattern 163 included in the display device 30 may have a shape similar to the first insulating pattern 161. In other words, the curved portion 163b included in the second insulating pattern 163 may be bent in the same direction as the curved portion 161b included in the first insulating pattern 161.

[0166] In the manufacturing process of the display device 30, the curved portion 163b included in the display device 30 may be temporarily positioned in a first direction (X-axis direction) or in a direction parallel to the substrate 110, and then bent toward one side in a third direction (Z-axis direction) by subsequent processes.

[0167] The curved portion 163b included in the display device 30 may include a first surface 3bu. The first surface 3bu of the curved portion 163b may be a surface of the curved portion 163b that contacts the first insulating pattern 161. The first surface 3bu may be curved, and the slope of the first surface 3bu may decrease as it moves toward the light-emitting region EA.

[0168] The length L3b' of the curved portion 163b of the second insulating pattern 163 included in the display device 30 may have a value of about 50 nanometers or more and about 500 nanometers or less.

[0169] In an embodiment, the element insulating layer 155 may also be included in the display device 30 to conformally cover the insulating pattern 160 included in the display device 30 with a uniform thickness. However, the meaning of uniform thickness as described above may include 10% or less of a process tolerance.

[0170] The element insulating layer 155 and cathode electrode CE included in the display device 30 may have the same structure and characteristics as the element insulating layer 155 and cathode electrode CE included in the display device 10. Any repeated detailed descriptions thereof will be omitted.

[0171] According to the embodiment, the display device 30 can help minimize the spacing distance W3 between the first light-emitting layer EL1, the second light-emitting layer EL2 and the third light-emitting layer EL3 by forming the insulating pattern 160 to bend toward one side in the third direction (Z-axis direction).

[0172] Figure 9 According to another embodiment, along Figure 3 A schematic cross-sectional view taken by line X1-X1'.

[0173] Apart from Figures 1 to 8 In addition, refer to Figure 9 Including Figure 9 The display element layer 150 in the display device 50 shown may have the same characteristics as those included in the display device 50. Figure 4 The display element layer 150 in the display device 10 shown has a different shape. In the following text, any repetitive detailed descriptions of the same or similar structures of the display device 50 as those of the display device 10 will be omitted, and the different structures will be described primarily.

[0174] In an embodiment, the display element layer 150 included in the display device 50 may be positioned on the second via layer 127. The display element layer 150 may include a light-emitting element ED, an element insulating layer 155, and an insulating pattern 160. In such an embodiment, this may be omitted. Figure 4 The pixel-defining layer 151 shown.

[0175] The light-emitting layer EL included in the display device 50 can be positioned to contact the anode electrode AE. The width of the light-emitting layer EL included in the display device 50 in the first direction (X-axis direction) can be smaller than the width of the anode electrode AE. Therefore, a portion of the anode electrode AE ​​included in the display device 50 can be exposed and not covered by the light-emitting layer EL.

[0176] The first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 included in the display device 50 can be spaced apart from each other by the component insulating layer 155.

[0177] The light-emitting layer EL included in the display device 50 can be formed by photolithography during the manufacturing process. Therefore, the light-emitting layer EL included in the display device 50 can have the same side shape as the light-emitting layer EL included in the display device 10 described above. Any repeated detailed descriptions thereof will be omitted.

[0178] The insulating layer 155 included in the display device 50 may define an opening OP5. The light-emitting area EA included in the display device 50 may be defined by the opening OP5.

[0179] The element insulating layer 155 included in the display device 50 may expose the light-emitting layer EL in the portion overlapping with the opening OP5, and may be positioned around the opening OP5.

[0180] The component insulating layer 155 included in the display device 50 can contact and cover the insulating pattern 160 in the portion overlapping with the non-light-emitting region NLA. By extending from the insulating pattern 160, the component insulating layer 155 included in the display device 50 can contact and cover the side surface of the light-emitting layer EL and the anode electrode AE ​​in the portion overlapping with the non-light-emitting region NLA.

[0181] The component insulating layer 155 included in the display device 50 can insulate and separate the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3 from each other.

[0182] The insulating pattern 160 included in the display device 50 may have the same shape as the insulating pattern 160 included in the display device 10. In an embodiment, the insulating pattern 160 included in the display device 50 may include a first insulating pattern 161 and a second insulating pattern 163, and the first insulating pattern 161 and the second insulating pattern 163 may include curved portions that are bent in a direction toward one side in a third direction (Z-axis direction). Any repeated detailed descriptions thereof will be omitted.

[0183] The cathode electrode CE included in the display device 50 can contact the light-emitting layer EL in the portion superimposed with the opening OP5, and can completely cover the element insulating layer 155 in the portion superimposed with the non-light-emitting area NLA. The cathode electrode CE included in the display device 50 can be spaced apart from the anode electrode AE ​​through the element insulating layer 155. Any repeated detailed descriptions thereof will be omitted.

[0184] According to the embodiment, the display device 50 can help minimize the spacing distance W5 between the first light-emitting layer EL1, the second light-emitting layer EL2 and the third light-emitting layer EL3 by forming the insulating pattern 160 bent toward one side in the third direction (Z-axis direction) and forming the element insulating layer 155 to cover the insulating pattern 160 and the light-emitting layer EL, while separating and insulating the anode electrode AE.

[0185] Figure 10 It shows the manufacturing process. Figure 4 The flowchart shows the method for displaying the element layer.

[0186] Reference Figure 10 The method (S1) for manufacturing a display element layer 150 included in a display device 10 according to the embodiment may include a process of forming a light-emitting layer and an insulating layer on a substrate including an anode electrode (S100), a process of removing a portion of the insulating layer and the light-emitting layer by performing a dry etching process (S200), a process of forming a bent portion of the insulating layer by performing an ashing process (S300), a process of forming an insulating pattern after forming an element insulating layer defining an opening (S400), and a process of forming a cathode electrode on the light-emitting layer and the element insulating layer (S500).

[0187] Figure 11 It is shown Figure 10 A cross-sectional view of process S100.

[0188] Reference Figure 11 The process of forming a light-emitting layer and an insulating layer on a substrate including an anode electrode is described (S100).

[0189] In an embodiment of the method for manufacturing a display element layer, a plurality of anode electrodes AE are formed on a thin-film transistor layer 130. The anode electrodes AE may include a first anode electrode AE1, a second anode electrode AE2, and a third anode electrode AE3, and the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be spaced apart from each other by a pixel defining layer 151.

[0190] In this process, the formation of the anode electrode AE ​​can be performed by forming a film formation process (e.g., sputtering) of at least one of the metal materials selected above and a patterning process of the metal material (e.g., etching).

[0191] Although not shown in the accompanying drawings, a thin-film transistor layer 130 can be disposed on the substrate 110, and the structure of the thin-film transistor layer 130 is similar to that described above. Figure 4 The descriptions have the same structure. Any repeated detailed descriptions will be omitted.

[0192] Next, a first light-emitting layer EL1 is formed on the anode electrode AE. The first light-emitting layer EL1 can cover the anode electrode AE ​​and the thin-film transistor layer 130. The process of forming the first light-emitting layer EL1 according to the embodiment can be performed by a thermal evaporation method. This process can be performed without using a separate fine metal mask. Therefore, the first light-emitting layer EL1 can completely cover the anode electrode AE ​​and the thin-film transistor layer 130.

[0193] Next, a first insulating layer M1 and a second insulating layer M2 are sequentially stacked on the first light-emitting layer EL1. The first insulating layer M1 and the second insulating layer M2 can contact and completely cover the first light-emitting layer EL1. In this process, the first insulating layer M1 and the second insulating layer M2 can function as a hard mask.

[0194] Figures 12 to 14 It is shown Figure 10 A cross-sectional view of process S200.

[0195] Reference Figures 12 to 14 The process of removing a portion of the insulating layer and the light-emitting layer by performing a dry etching process is described (S200).

[0196] In an embodiment of the method for manufacturing a display element layer, a photoresist PR1 is formed on a second insulating layer M2, and the photoresist PR1 is used as a mask to perform a dry etching process.

[0197] In embodiments, for example, a dry etching process can be performed using reactive ion etching (RIE) processes employing reactive gases such as CHF3, CH3F, CH2F2, C2HF6, CF4, C2F6, and C3F6, as well as sputtering gases such as Ar and O2 / Ar. In this case, an inductively coupled plasma (ICP) source or a capacitively coupled plasma (CCP) source can be used as the plasma source.

[0198] In this process, such as Figure 12 As shown, the photoresist PR1 can be positioned in the portion superimposed with the first anode electrode AE1. The dry etching process can be performed in two separate processes.

[0199] First, remove the first insulating layer M1 and the second insulating layer M2.

[0200] In this process, such as Figure 13 As shown, portions of the first insulating layer M1 and the second insulating layer M2 that are not stacked with the photoresist PR1 can be removed simultaneously. In an embodiment, for example, portions of the first insulating layer M1 and the second insulating layer M2 that are not stacked with the photoresist PR1 can be removed isotropically. Therefore, the first light-emitting layer EL1 that is not stacked with the photoresist PR1 can be exposed.

[0201] Next, as Figure 14 As shown in the figure, the first light-emitting layer EL1 is removed.

[0202] In this process, the process of removing the first light-emitting layer EL1 and the process of removing the first insulating layer M1 and the second insulating layer M2 can use different process gases.

[0203] In this process, the portion of the first luminescent layer EL1 that is not superimposed with the photoresist PR1 can be removed, thereby exposing the second anode electrode AE2 and the third anode electrode AE3.

[0204] In this process, the side surface e3 of the first light-emitting layer EL1 can be a sloping surface, can have a high taper angle, and can have a clear profile without tail defects. Any repeated detailed descriptions will be omitted.

[0205] In this process, such as Figure 14 As shown, the first insulating layer M1 and the second insulating layer M2 may have tips that protrude further than the side surface e3 of the first light-emitting layer EL1. The tips included in the first insulating layer M1 and the second insulating layer M2 may be portions protruding in a first direction (X-axis direction). Therefore, an undercut can be formed between the side surface e3 of the first light-emitting layer EL1 and the first insulating layer M1. The second insulating layer M2 may be positioned to contact the photoresist PR1.

[0206] Figure 15 and Figure 16 It is shown Figure 10 A cross-sectional view of process S300.

[0207] Reference Figure 15 and Figure 16 The process for forming the bent portion of the insulating layer by performing an ashing process is described (S300).

[0208] In an embodiment, such as Figure 15 and Figure 16 As shown, the photoresist PR1 is removed by performing an ashing process. In this process, the photoresist PR1 can be removed, and the first light-emitting layer EL1 can be protected by a first insulating layer M1 and a second insulating layer M2, which are used as a hard mask.

[0209] As described above, in the display device 10 according to the embodiment, by forming a second insulating pattern 163 (second insulating layer M2) with a relatively large tensile stress value to contact the first insulating pattern 161 (first insulating layer M1), the first insulating layer M1 and the second insulating layer M2 with curved portions can be formed without a separate additional process. Therefore, in this process, the tips of the first insulating layer M1 and the second insulating layer M2 can be bent toward one side in the third direction (Z-axis direction).

[0210] In this process, based on the stress characteristics of each of the first insulating layer M1 and the second insulating layer M2, the tips of the first insulating layer M1 and the second insulating layer M2 can be formed as follows: Figure 7 The shape of the insulating pattern 160 shown.

[0211] Figures 17 to 20 It is shown Figure 10 A cross-sectional view of the S400 process.

[0212] Reference Figures 17 to 20 The process of forming an insulating pattern after forming a component insulating layer with defined openings is described (S400).

[0213] In this embodiment, a component insulating layer 155 is formed that completely covers the first light-emitting layer EL1, the first insulating layer M1, and the second insulating layer M2. In this process, the component insulating layer 155 may completely cover the second anode electrode AE2, the third anode electrode AE3, and the pixel defining layer 151.

[0214] In this process, the process of forming the element insulating layer 155 can be performed by depositing inorganic insulating materials.

[0215] In this process, the component insulating layer 155 can effectively prevent the first light-emitting layer EL1 from being exposed to the atmosphere or process environment.

[0216] Next, after forming photoresist PR2 on the element insulating layer 155 in the portion overlapping with the tips of the first insulating layer M1 and the second insulating layer M2, a dry etching process is performed.

[0217] In this process, the component insulating layer 155 that is not stacked with the photoresist PR2 can be completely removed; therefore, the component insulating layer 155 can be formed as follows: Figure 18 The shape shown.

[0218] In one embodiment, the component insulating layer 155 may define a temporary opening OPm and expose a second insulating layer M2 in the portion overlapping with the temporary opening OPm. The component insulating layer 155 may be positioned around the temporary opening OPm.

[0219] The component insulating layer 155 can completely cover the tips of the first insulating layer M1 and the second insulating layer M2, and can extend from the tips of the first insulating layer M1 and the second insulating layer M2 to completely cover the side surface e3 of the first light-emitting layer EL1. In addition, the component insulating layer 155 can contact the pixel defining layer 151.

[0220] In this process, the second anode electrode AE2, the third anode electrode AE3, and the pixel defining layer 151 can be exposed again. Although not shown in the figures, the photoresist PR2 is removed by performing an ashing process.

[0221] Subsequently, by repeating the same process described above, a second light-emitting layer EL2, a first insulating layer M1, a second insulating layer M2, and a component insulating layer 155 are formed on the second anode electrode AE2, and by repeating the same process again, a third light-emitting layer EL3, a first insulating layer M1, a second insulating layer M2, and a component insulating layer 155 are formed on the third anode electrode AE3. Any repeated detailed descriptions will be omitted.

[0222] In this process, the first insulating layer M1, the second insulating layer M2 and the element insulating layer 155 covering the first anode electrode AE1 and the first light-emitting layer EL1, the first insulating layer M1, the second insulating layer M2 and the element insulating layer 155 covering the second anode electrode AE2 and the second light-emitting layer EL2, and the first insulating layer M1, the second insulating layer M2 and the element insulating layer 155 covering the third anode electrode AE3 and the third light-emitting layer EL3 can be spaced apart from each other.

[0223] Since the display device 10 according to the embodiment includes a first insulating layer M1 and a second insulating layer M2 covering the upper surface of the light-emitting layer EL and an element insulating layer 155 covering the side surface of the light-emitting layer EL in the manufacturing process, damage defects to the light-emitting layer EL can be effectively prevented even during repeated etching processes. Therefore, the display device 10 according to the embodiment can be manufactured easily or efficiently.

[0224] Next, as Figure 19 As shown, the first insulating layer M1 and the second insulating layer M2 located in the portion superimposed with the temporary opening OPm are removed by performing a dry etching process.

[0225] In this process, the first insulating layer M1 can be formed as follows: Figure 20 The first insulating pattern 161 shown in the figure has a shape, and the second insulating layer M2 can be formed as follows: Figure 20 The shape of the second insulating pattern 163 shown is illustrated. As a result, a shape like... Figure 4 The insulating pattern 160 shown is shown.

[0226] In this process, it is possible to... Figure 4As shown, an opening OP2 is formed in the component insulating layer 155. An insulating pattern 160 can be positioned around the opening OP2, and the light-emitting layer EL can be exposed in the portion overlapping with the opening OP2.

[0227] Figure 21 It is shown Figure 10 A cross-sectional view of the S500 process.

[0228] Reference Figure 21 The process for forming a cathode electrode on the light-emitting layer and the component insulating layer is described (S500).

[0229] In this process, the cathode electrode (CE) can be formed using a sputtering process. This process can be performed in a vacuum chamber.

[0230] In this process, the cathode electrode CE can contact the first light-emitting layer EL1, the second light-emitting layer EL2 and the third light-emitting layer EL3 in the portion superimposed with the opening OP2, and can extend from the portion superimposed with the opening OP2 in the portion superimposed with the non-light-emitting region NLA to cover the element insulating layer 155 and the pixel defining layer 151.

[0231] As a result, it can form Figure 4 The display element layer 150 shown is shown.

[0232] The display device 10 according to the embodiment can form an insulating pattern 160 with a curved portion by making the tensile stress in the second insulating pattern 163 greater than the tensile stress in the first insulating pattern 161 (or setting the tensile stress in the second insulating pattern 163 to be greater than the tensile stress in the first insulating pattern 161) without a separate process.

[0233] Specifically, in the manufacturing process of the display device 10, the second insulating pattern 163 can be bent toward one side in the third direction (Z-axis direction) or toward a direction perpendicular to the substrate 110. Therefore, the first insulating pattern 161, positioned to contact the second insulating pattern 163, can also be bent in the same direction. Thus, the display device 10 according to the embodiment can be manufactured easily or efficiently.

[0234] Figure 22 This is a block diagram of an electronic device according to an embodiment.

[0235] Apart from Figures 1 to 21 In addition, refer to Figure 22 The display devices 10, 30, or 50 according to the embodiments can be applied to various electronic devices 1. The electronic device 1 according to the embodiments may include the above-described display devices 10, 30, or 50, and may also include modules or devices with additional functions in addition to the display devices 10, 30, or 50.

[0236] The electronic device 1 according to the embodiment may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0237] The processor 12 may include at least one selected from a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0238] The data required for the operation of the processor 12 or the display module 11 can be stored in the memory 13. When the processor 12 executes the application stored in the memory 13, image data signals and / or input control signals can be sent to the display module 11, and the display module 11 can process the provided signals and output image information through the display screen.

[0239] The power module 14 may include a power supply module (such as a power adapter or battery device) and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.

[0240] At least one of the components of the electronic device 1 described above may be included in the display device according to the above embodiments. Additionally, some modules that are functionally included within a single module may be included in the display device, while other modules may be disposed separately from the display device. In an embodiment, for example, the display device includes a display module 11, and the processor 12, memory 13, and power module 14 may be disposed within the electronic device 1 as other devices instead of within the display device.

[0241] Figure 23 Schematic diagrams of electronic devices according to various embodiments are shown.

[0242] Apart from Figures 1 to 22 In addition, refer to Figure 23 The various electronic devices 1 that employ the display devices 10, 30, or 50 according to the embodiments may include not only image display electronic devices such as smartphones 1_1a, tablet PCs 1_1b, laptop computers 1_1c, televisions (TVs) 1_1d, and desktop monitors 1_1e, but also wearable electronic devices including display modules such as smart glasses 1_2a, head-mounted displays 1_2b, and smartwatches 1_2c, as well as vehicle electronic devices 1_3 including display modules such as central information displays (CIDs) arranged on the instrument cluster, central dashboard, or instrument panel of a vehicle, and interior mirror displays.

[0243] According to an embodiment, the display device and the method of manufacturing the display device can provide high-resolution images and resolve contact defects between the anode and the cathode.

[0244] However, the effects of this disclosure are not limited to those set forth herein. The above and other effects of this disclosure will become more apparent to those skilled in the art upon reference to the claims.

[0245] The invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.

[0246] Although the invention has been specifically shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made herein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A display device, the display device comprising: The substrate includes luminescent and non-luminescent regions; An anode electrode is disposed on one surface of the substrate to overlap with the light-emitting region; A light-emitting layer is disposed on the anode electrode; An insulating layer is disposed on the light-emitting layer and defines an opening; A cathode electrode is disposed on the insulating layer of the element and in contact with the light-emitting layer in the portion overlapping with the opening; as well as An insulating pattern is configured to surround the opening in a plan view and be disposed between the light-emitting layer and the element insulating layer. The insulating pattern includes a curved portion that bends in a direction perpendicular to one surface of the substrate.

2. The display device according to claim 1, wherein, The insulating pattern is in contact with the light-emitting layer, the cathode electrode, and the component insulating layer, and The insulating pattern is completely surrounded by the light-emitting layer, the cathode electrode, and the element insulating layer.

3. The display device according to claim 2, wherein, The length of the curved portion of the insulating pattern is 50 nanometers or greater and 500 nanometers or less.

4. The display device according to claim 1, wherein, The insulating pattern includes at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

5. The display device according to claim 4, wherein, The insulating pattern includes: A first insulating pattern is in contact with the light-emitting layer; and A second insulating pattern is disposed between the first insulating pattern and the insulating layer of the component.

6. The display device according to claim 5, wherein, The tensile stress value of the second insulating pattern is greater than that of the first insulating pattern.

7. The display device according to claim 6, wherein, The first curved portion included in the first insulating pattern and the second curved portion included in the second insulating pattern are in contact with each other, and The first curved portion and the second curved portion are curved in the same direction.

8. The display device according to claim 1, wherein, The side surface of the insulating pattern facing the opening is completely covered by the cathode electrode.

9. The display device according to claim 1, wherein, The tilt angle formed by one surface of the substrate and the side surface of the light-emitting layer is 60 degrees or greater and 90 degrees or less.

10. The display device according to claim 9, wherein, The insulating layer of the element contacts and covers the side surfaces of the insulating pattern and the light-emitting layer.

11. The display device according to claim 10, wherein, The curved portion of the insulating pattern protrudes further than the side surface of the light-emitting layer in the direction toward the non-light-emitting area.

12. The display device of claim 1, further comprising a pixel defining layer covering the edge of the anode electrode and defining an opening. in, The portion of the light-emitting layer within the opening defined by the pixel-defining layer contacts the anode electrode, and The portion of the light-emitting layer exposed through the opening defined by the element's insulating layer contacts the cathode electrode.

13. A method for manufacturing a display device, the method comprising: A light-emitting layer and an insulating layer are formed on a substrate including an anode electrode; A portion of the insulating layer and the light-emitting layer is removed by performing a dry etching process; The curved portion of the insulating layer is formed by performing an ashing process; An insulating pattern is formed after the element insulating layer with defined openings is formed; as well as A cathode electrode is formed on the light-emitting layer and the insulating layer of the element. The insulating layer includes a first insulating layer and a second insulating layer, and The tensile stress value of the second insulating layer is greater than that of the first insulating layer.

14. The method according to claim 13, wherein, In the step of forming the curved portion of the insulating layer by performing the ashing process, the edges of the first insulating layer and the second insulating layer are curved in a direction perpendicular to one surface of the substrate.

15. An electronic device, the electronic device comprising: A display device includes a substrate, the substrate including a light-emitting region and a non-light-emitting region; as well as At least one selected from the display module, processor, memory, and power module is connected to the display device. The display device further includes: An anode electrode is disposed on one surface of the substrate to overlap with the light-emitting region; A light-emitting layer is disposed on the anode electrode; An insulating layer is disposed on the light-emitting layer and defines an opening; A cathode electrode is disposed on the insulating layer of the element and contacts the light-emitting layer in the portion overlapping with the opening; and An insulating pattern is configured to surround the opening in a plan view and be disposed between the light-emitting layer and the element insulating layer, and The insulating pattern includes a curved portion that bends in a direction perpendicular to one surface of the substrate.

16. The electronic device according to claim 15, wherein, The insulating pattern is in contact with the light-emitting layer, the cathode electrode, and the component insulating layer, and The insulating pattern is completely surrounded by the light-emitting layer, the cathode electrode, and the element insulating layer.

17. The electronic device according to claim 16, wherein, The length of the curved portion of the insulating pattern is 50 nanometers or greater and 500 nanometers or less.

18. The electronic device according to claim 15, wherein, The insulating pattern includes at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

19. The electronic device according to claim 18, wherein, The insulating pattern includes: A first insulating pattern is in contact with the light-emitting layer; and A second insulating pattern is disposed between the first insulating pattern and the insulating layer of the component.

20. The electronic device according to claim 19, wherein, The tensile stress value of the second insulating pattern is greater than that of the first insulating pattern.

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