A method and system for regulating micro-order based on metastable energy window

Abstract

The application relates to the technical field of semiconductor device special equipment manufacturing, and discloses a micro-order regulation method and system based on a metastable energy window. The method emits a pulse photon beam with a specific frequency to the surface of a semiconductor target material, so that lattice atoms enter a metastable energy window; the reflection spectrum of the semiconductor target material is collected in real time during the pulse intermittent period, and lattice vibration mode features are extracted; the lattice vibration mode features are compared with preset metastable energy window boundary threshold values, the photon density and the duration of the next pulse photon beam are dynamically adjusted according to the comparison result, and lattice atoms are repaired by short-range atomic rearrangement in the metastable energy window. The scheme limits energy injection to the metastable interval, and blocks the long-range diffusion path of doped atoms.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing technology, and discloses a method and system for microscopic order control based on metastable energy windows. Background Technology

[0002] In semiconductor manufacturing processes, after ion implantation, the semiconductor target needs to undergo annealing to repair lattice defects and activate impurities. Current conventional methods employ rapid thermal annealing or laser annealing, irradiating the semiconductor target surface with an external heating source or high-energy light source to raise the target temperature to a set threshold. During this process, the control system adjusts the heating power according to a preset temperature-time curve. This annealing process is an open-loop control mechanism; energy is continuously injected until the target lattice absorbs enough energy to complete rearrangement, after which the heat source is cut off to cool the target. In existing processes, the termination of energy implantation relies solely on preset macroscopic time parameters or static temperature monitoring, failing to provide real-time intervention in the microscopic state of the lattice atoms during annealing.

[0003] The core technical problem with the existing solutions is that the energy injection process cannot be confined within the metastable range of lattice atoms. Due to the lack of a dynamic response mechanism to the real-time state of lattice atoms, the preset energy injection amount usually directly exceeds the metastable range, causing the target material to locally enter a state of complete melting or high stability. Substituted dopants in the metastable state gain long-range migration kinetic energy after crossing the range boundary, triggering severe diffusion of dopants across lattice positions. Summary of the Invention

[0004] The purpose of this invention is to provide a method and system for microscopic order control based on metastable energy windows, which can effectively solve the problems in the background art mentioned above.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A method for microscopic order control based on a metastable energy window includes: emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target, causing the lattice atoms of the semiconductor target to enter the metastable energy window; During the pulse interval of the pulsed photon beam, the reflection spectrum of the semiconductor target is acquired in real time, and the lattice vibration mode characteristics are extracted from the reflection spectrum. The lattice vibration mode characteristics are compared with a preset metastable energy window boundary threshold. Based on the comparison results, the photon density and duration of the next pulsed photon beam are dynamically adjusted so that the lattice atoms can complete the lattice defect repair through short-range atomic rearrangement within the metastable energy window.

[0006] Preferably, the step of emitting a pulsed photon beam of a specific frequency onto the surface of the semiconductor target includes: acquiring the lattice absorption spectrum of the semiconductor target; The matching resonant absorption wavelength is determined based on the lattice absorption spectrum, and a pulsed photon beam of the specific frequency is generated based on the resonant absorption wavelength so that the energy of the pulsed photon beam is directly absorbed by the lattice atoms and converted into lattice kinetic energy.

[0007] Preferably, extracting lattice vibration mode features from the reflection spectrum includes: performing a Fourier transform on the reflection spectrum to obtain a frequency domain spectral signal; Phonon characteristic peaks are separated from the frequency domain spectral signal, and the peak frequency and full width at half maximum (FWHM) of the phonon characteristic peaks are used as the lattice vibration mode characteristics.

[0008] Preferably, comparing the lattice vibration mode features with a preset metastable energy window boundary threshold includes: determining whether the peak frequency of the phonon feature peak falls within a preset frequency safety range, and whether the full width at half maximum (FWHM) is less than a preset broadening threshold. If the peak frequency falls within the frequency safety range and the half-width at half-maximum (WHM) is less than the broadening threshold, then the lattice atom is determined to be within the metastable energy window.

[0009] Preferably, the step of dynamically adjusting the photon density and duration of the next pulsed photon beam based on the comparison result includes: when it is determined that the lattice atoms are within the metastable energy window, keeping the photon density and duration of the next pulsed photon beam unchanged; When it is determined that the peak frequency does not fall within the frequency safety range or the half-width is greater than the broadening threshold, the output of the next pulse photon beam is cut off.

[0010] Preferably, the step of dynamically adjusting the photon density and duration of the next pulsed photon beam based on the comparison result further includes: when it is determined that the peak frequency is close to the upper limit of the frequency safety range, reducing the photon density of the next pulsed photon beam by a preset step size and extending the duration of the pulse interval so that the lattice atoms return to the central region of the metastable energy window.

[0011] Preferably, during the process of repairing lattice defects by short-range atomic rearrangement, the method further includes: real-time monitoring of the offset of the lattice absorption spectral lines; When the offset exceeds the allowable error range, the resonant absorption wavelength is re-determined based on the offset lattice absorption spectrum, and the frequency of the subsequent pulsed photon beam is adjusted based on the re-determined resonant absorption wavelength.

[0012] Preferably, it further includes: identifying plasma oscillation noise bands in the frequency domain spectral signal; A notch filter is used to filter out the plasma oscillation noise band to prevent the plasma oscillation noise band from interfering with the extraction of the phonon characteristic peaks and to improve the extraction accuracy of the lattice vibration mode features.

[0013] Preferably, after reducing the photon density of the next pulsed photon beam by a preset step size, the method further includes: controlling the pulsed photon beam to perform a two-dimensional scanning movement on the surface of the semiconductor target. For each spatial position of the two-dimensional scanning movement, the extraction of the lattice vibration mode features and the adjustment of the photon density are performed independently, so that all lattice atoms on the entire surface of the semiconductor target are repaired within the metastable energy window.

[0014] Preferably, it includes: a transient energy source for emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target, causing the lattice atoms of the semiconductor target to enter a metastable energy window; A spectral acquisition device is used to acquire the reflection spectrum of the semiconductor target in real time during the pulse interval of the pulsed photon beam, and extract lattice vibration mode features from the reflection spectrum; A pulse controller is used to compare the lattice vibration mode characteristics with a preset metastable energy window boundary threshold, and dynamically adjust the photon density and duration of the next pulse photon beam according to the comparison result, so that the lattice atoms can complete the lattice defect repair through short-range atomic rearrangement within the metastable energy window.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention extracts lattice vibrational mode features by real-time acquisition of reflection spectra during pulse intervals, and compares these features with the threshold values ​​of the metastable energy window. Based on the comparison results, the photon density and duration of the next pulse photon beam are dynamically adjusted. This closed-loop control mechanism strictly restricts the energy injection process within the metastable energy window, ensuring that lattice atoms only undergo short-range atomic rearrangements, thus blocking the long-range migration paths of substitutional dopants caused by energy injection crossing the metastable region.

[0016] 2. By obtaining the lattice absorption spectrum, the resonant absorption wavelength is determined to generate a pulsed photon beam, which directly converts photon energy into lattice kinetic energy. The atomic state is determined by combining the peak frequency and full width at half maximum (FWHM) of the phonon characteristic peaks in the frequency domain spectral signal. When the characteristic peaks approach the upper limit of the boundary, the photon density is reduced and the pulse interval is extended to make the atoms retreat to the central region. The photon beam frequency is readjusted by monitoring the absorption spectrum shift, and a notch filter is used to filter out the plasma oscillation noise band, thus eliminating interference factors in the spectral extraction process. Attached Figure Description

[0017] Figure 1 This is an overall flowchart of the microscopic order regulation method of the present invention; Figure 2 This is a flowchart of the pulsed photon beam generation and frequency dynamic calibration of the present invention; Figure 3 This is a flowchart of the reflection spectrum processing and lattice vibration mode feature extraction of the present invention; Figure 4 This is a flowchart illustrating the logic of metastable energy window boundary threshold comparison and state determination in this invention. Figure 5 This is a flowchart of the dynamic adjustment of the photon beam and the two-dimensional scanning control of the target surface in this invention; Figure 6 This is a flowchart illustrating the architecture and signal interaction of the present invention. Detailed Implementation

[0018] Please refer to the attached document. Figure 1 This embodiment provides a method of first emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target. The energy of the pulsed photon beam is absorbed by the lattice atoms of the semiconductor target and converted into the kinetic energy of the lattice atoms, causing the instantaneous energy of the lattice atoms to enter a metastable energy window. The metastable energy window is the energy range within which lattice atoms can undergo short-range atomic rearrangement but not long-range migration, and its mathematical definition is as follows:

[0019] in, A set of metastable energy windows. The instantaneous average energy of the lattice atoms within the semiconductor target material. The minimum energy threshold required for lattice defect repair is the critical energy at which lattice atoms overcome lattice constraints and undergo short-range atomic rearrangement. When the instantaneous energy of lattice atoms is below this threshold, the atoms cannot undergo sufficient displacement to fill lattice vacancies or repair dislocation defects. The critical energy threshold for long-range migration of lattice atoms is the minimum energy required for an atom to escape its original equilibrium position in the lattice and diffuse over a long distance within the target material. When the instantaneous energy of a lattice atom exceeds this threshold, the substitutional dopant atom will gain enough kinetic energy to escape its lattice position, leading to a serious doping diffusion problem.

[0020] After a single pulse of the pulsed photon beam is emitted, a pulse interval period begins. During this interval, the reflection spectrum of the semiconductor target surface is acquired in real time. The duration of the pulse interval period is longer than the total time required for reflection spectrum acquisition to ensure that the spectral acquisition process is not interfered with by the strong light emitted during the pulsed photon beam. The acquired reflection spectrum carries information about the vibrational state of the semiconductor target lattice.

[0021] After acquiring the reflection spectrum, lattice vibrational mode features are extracted from it. Lattice vibrational mode features are physical quantities characterizing the vibrational states of lattice atoms and the degree of lattice order, and are directly related to the instantaneous energy of lattice atoms and the lattice defect density. The mapping relationship between lattice vibrational mode features and the instantaneous energy of lattice atoms is defined by the following formula:

[0022] in, The peak angular frequency of the phonon characteristic peak corresponding to the lattice vibration. denoted as , which represents the characteristic phonon angular frequency of the lattice atoms in the ground state of the semiconductor target material, corresponding to the intrinsic vibrational frequency of a perfect, defect-free lattice under zero-temperature conditions. This is the cohesive energy of the semiconductor target lattice, i.e., the total energy required to break the lattice structure per unit volume. This formula establishes a quantitative mapping relationship between the phonon peak frequency, which can be obtained through spectral measurement, and the instantaneous energy of lattice atoms, which cannot be directly measured. It provides a quantitative basis for determining the energy range of lattice atoms through spectral characteristics.

[0023] Furthermore, the lattice vibrational mode characteristics also include physical quantities characterizing the lattice order, which are characterized by the full width at half maximum (FWHM) of the phonon characteristic peaks. The quantitative relationship between FWHM and lattice defect density is defined by the following formula:

[0024] in, The full width at half maximum (FWHM) of the phonon characteristic peak. The intrinsic half-width at half-maximum (HWHM) of a perfect crystal lattice in the ground state is determined by the intrinsic phonon scattering characteristics of the lattice. This is the additional broadening factor corresponding to lattice defects, which is positively correlated with the total density of defects such as vacancies, dislocations, and interstitial atoms within the lattice. For Boltzmann constant, The instantaneous temperature of the semiconductor target lattice is given by the formula. This formula shows that when the instantaneous energy of the lattice atoms is higher than the defect repair threshold, as the energy increases, the lattice defects are gradually repaired, the defect density decreases, and the full width at half maximum (FWHM) of the phonon characteristic peaks decreases accordingly. The FWHM value can be used to quantitatively determine the progress of lattice defect repair.

[0025] After extracting the lattice vibration mode features, these features are compared with preset metastable energy window boundary thresholds. The preset metastable energy window boundary thresholds are pre-calibrated based on the material properties of the semiconductor target and include frequency boundary thresholds corresponding to the upper and lower limits of the metastable energy window, as well as a full width at half maximum (FWHM) threshold corresponding to the lattice order. The core parameters of the metastable energy window for different semiconductor materials are shown in Table 1.

[0026] Table 1. Core parameters of metastable energy windows for different semiconductor materials. ; In Table 1, The phonon characteristic peak angular frequency corresponding to the lower limit of the metastable energy window is given by... It is calculated using the aforementioned frequency-energy mapping formula; The phonon characteristic peak angular frequency corresponding to the upper limit of the metastable energy window is given by... It is calculated using the aforementioned frequency-energy mapping formula; The preset broadening threshold corresponds to the maximum allowable half-width at half-maximum (WHM) after lattice defect repair. In practical applications, the corresponding boundary threshold parameters are selected from Table 1 according to the material type of the semiconductor target to be processed, thus completing the parameter configuration for the comparison process.

[0027] After comparing the lattice vibration mode characteristics with preset boundary thresholds, the photon density and duration of the next pulse photon beam are dynamically adjusted based on the comparison results. Photon density, the total number of pulse photons per unit area, determines the total energy injected into the lattice atoms by a single pulse; pulse duration, the emission duration of a single pulse photon beam, determines the energy injection rate. By adjusting the photon density and duration, the total energy injected into the lattice can be precisely controlled, ensuring that the instantaneous energy of the lattice atoms is always confined within a metastable energy window. Under this energy constraint, lattice atoms can only obtain the kinetic energy for short-range atomic rearrangement, and the distance they can move does not exceed 5 lattice constants. They can only fill adjacent lattice vacancies and repair local dislocation defects, but cannot obtain the kinetic energy required for long-range migration, thus blocking the diffusion path of substitutional dopants and completing the repair of lattice defects.

[0028] This embodiment constructs a complete closed-loop control mechanism by acquiring and extracting spectra during the pulse interval, and by comparing features and dynamically adjusting pulse parameters. This mechanism keeps the energy of lattice atoms within the metastable energy window, avoiding the doping diffusion problem caused by energy injection exceeding the metastable range during open-loop control.

[0029] In one alternative embodiment, please refer to the appendix. Figure 2The process of emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target first involves acquiring the lattice absorption spectrum of the semiconductor target. Based on this spectrum, a matching resonant absorption wavelength is determined, and a pulsed photon beam of a specific frequency is generated. The lattice absorption spectrum is a curve showing the change in the lattice absorption coefficient of the semiconductor target with the incident light wavelength. The wavelength position where resonant absorption occurs in the lattice can be determined through the lattice absorption spectrum. When the wavelength of the pulsed photon beam matches the resonant absorption wavelength, the energy of the pulsed photons can be directly absorbed by the lattice atoms and converted into the kinetic energy of lattice vibrations. This avoids nonradiative transitions and plasma excitation caused by electron absorption of photon energy, improving the efficiency and controllability of energy transfer.

[0030] The process of obtaining lattice absorption lines involves vertically irradiating a semiconductor target with a broadband light source while simultaneously collecting the transmitted and reflected light intensities. The lattice absorption coefficients corresponding to different wavelengths are then calculated using the following formula:

[0031] in, The incident light wavelength is The lattice absorption coefficient at that time The thickness of the light-absorbing layer of the semiconductor target material. wavelength The corresponding transmitted light intensity, wavelength The corresponding incident light intensity, For semiconductor target surface at wavelength The spectral reflectance at that point. By calculating the corresponding absorption coefficients for all wavelengths across the broad spectral range, the complete lattice absorption spectrum is obtained. .

[0032] After obtaining the lattice absorption spectrum, the resonant absorption wavelength is determined. The resonant absorption wavelength is the wavelength corresponding to the maximum value of the lattice absorption coefficient, satisfying... The photon energy corresponding to this wavelength perfectly matches the optical phonon vibration energy of the crystal lattice, enabling resonant absorption and direct conversion of photon energy into lattice kinetic energy. Based on this resonant absorption wavelength, a pulsed photon beam of a specific frequency is generated, with the center frequency of the pulsed photon beam being... ,in It is the speed of light in a vacuum.

[0033] Please refer to the attached document. Figure 3After acquiring the reflection spectrum during the pulse interval, the process of processing the reflection spectrum and extracting the lattice vibration mode features is as follows: First, the acquired reflection spectrum is converted from the wavelength domain to the frequency domain to obtain a discrete sampling signal of frequency-intensity. Then, a discrete Fourier transform is performed on the discrete sampling signal to obtain the frequency domain spectral signal. The mathematical expression of the discrete Fourier transform is as follows:

[0034] in, For frequency domain spectral signals at frequency points Complex amplitude at the location, The first part of the reflection spectrum signal converted to the frequency domain Discrete sampling points, This represents the total number of sampling points for the reflectance spectral signal. The unit is the imaginary unit. By using the discrete Fourier transform, the spectral signal in the time domain is converted into a frequency domain signal, which can separate the frequency components corresponding to different vibration modes, providing a basis for the extraction of phonon characteristic peaks.

[0035] After obtaining the frequency domain spectral signal, the plasma oscillation noise band within the signal is identified. This noise band represents the frequency component corresponding to the free electron plasma oscillations excited by the pulsed photon beam. It manifests as a continuous spectral band with a wide bandwidth and high amplitude in the frequency domain spectral signal. This noise band covers the frequency range of phonon characteristic peaks, interfering with their extraction. After identifying the center frequency and bandwidth of the plasma oscillation noise band, a notch filter is used to filter it out. The notch filter's... The domain transfer function is as follows:

[0036] in, For a second-order notch filter Domain transfer function, The center angular frequency of the plasma oscillation noise band. Let be the pole radius of the filter, with a value ranging from 0.95 to 1. <1, used to control the notch bandwidth of the filter. The closer the value is to 1, the narrower the notch bandwidth of the filter, the better the filtering effect on the target frequency, and the smaller the influence on adjacent frequency components. After filtering the frequency domain spectral signal with a notch filter, the interference of plasma oscillation noise band can be completely eliminated, and the extraction accuracy of lattice vibration mode features can be improved.

[0037] After filtering, phonon characteristic peaks are separated from the frequency domain spectral signal. Phonon characteristic peaks are discrete peak values ​​of the corresponding lattice vibration modes in the frequency domain spectral signal. The peak frequency and full width at half maximum (FWHM) of the phonon characteristic peaks are used as lattice vibration mode characteristics.

[0038] Please refer to the attached document. Figure 4 After extracting the lattice vibration mode features, these features are compared with a preset metastable energy window boundary threshold. Specifically, this involves determining whether the peak frequency of the phonon characteristic peaks falls within a preset frequency safety range and whether the full width at half maximum (FWHM) is less than a preset broadening threshold. The frequency safety range is... ,in This represents the angular frequency corresponding to the lower limit of the metastable energy window. The angular frequency corresponding to the upper limit of the metastable energy window is pre-calibrated by the aforementioned frequency-energy mapping relationship. When the peak frequency falls within the frequency safety range, it indicates that the instantaneous energy of the lattice atoms is within the metastable energy window; when the full width at half maximum (FWHM) is less than the preset broadening threshold, it indicates that the lattice defect density is within a controllable range and the lattice order meets the repair requirements. If the peak frequency falls within the frequency safety range and the FWHM is less than the broadening threshold, then the lattice atoms are determined to be within the metastable energy window.

[0039] The process of dynamically adjusting the photon density and duration of the next pulse photon beam based on the comparison results is as follows: when it is determined that the lattice atoms are within the metastable energy window, the photon density and duration of the next pulse photon beam are kept unchanged, and the current energy injection rate is maintained so that the lattice atoms continue to perform short-range atomic rearrangement within the metastable energy window to complete the repair of lattice defects; when it is determined that the peak frequency does not fall into the frequency safety range or the half-width is greater than the broadening threshold, the output of the next pulse photon beam is cut off and the energy injection is stopped to avoid the energy of the lattice atoms from exceeding the boundary of the metastable energy window or irreversible damage caused by excessive lattice defect density.

[0040] The key parameters for spectral signal processing and feature extraction involved in this embodiment are shown in Table 2.

[0041] Table 2 Key Parameters for Spectral Signal Processing and Feature Extraction ; In Table 2, the resonant absorption wavelength range corresponds to the wavelength interval of the lattice resonant absorption of the corresponding semiconductor material, the phonon characteristic peak frequency range corresponds to the frequency interval of the optical phonon vibration of the corresponding semiconductor material, and the plasma noise center frequency range corresponds to the center frequency interval of the plasma oscillation generated by the corresponding semiconductor material under pulsed photon beam irradiation. The notch filter pole radius and the number of discrete Fourier transform sampling points are configured according to the resolution requirements of the spectral acquisition. In practical applications, the corresponding parameters are selected from Table 2 according to the material type of the semiconductor target to be processed to complete the parameter configuration for the spectral signal processing and feature extraction process.

[0042] This embodiment refines the method for determining the frequency of the pulsed photon beam, refines the processing flow of the reflection spectrum, eliminates the interference of plasma oscillation noise through notch filtering, and clarifies the logic for determining the lattice state and the corresponding pulse adjustment strategy.

[0043] In another alternative embodiment, please refer to the appendix. Figure 5 The process of dynamically adjusting the photon density and duration of the next pulse photon beam based on the comparison results also includes reducing the photon density of the next pulse photon beam by a preset step size and extending the pulse interval when the peak frequency is determined to be approaching the upper limit of the frequency safety range, so that the lattice atoms return to the central region of the metastable energy window. (Upper limit of the frequency safety range) The upper limit of the energy corresponding to the metastable energy window, when the peak frequency approaches When the instantaneous energy of the lattice atoms is about to exceed the critical threshold for long-range migration, there is a risk of dopant atom diffusion. It is necessary to reduce the energy injection by adjusting the pulse parameters so that the energy of the lattice atoms falls back to a safe range.

[0044] The criterion for determining whether the peak frequency approaches the upper limit of the frequency safety range is that the peak frequency... and the upper limit of the frequency safety range The absolute value of the difference is less than the preset approximation threshold. ,Right now ,in The peak frequency of the phonon characteristic peaks extracted within the current pulse period. To approximate a pre-calibrated frequency threshold, the corresponding lattice energy approaches the critical distance of the long-range migration threshold. When the above criteria are met, a photon density adjustment operation is performed, and the adjustment amount is calculated using the following formula:

[0045] in, The photon density of the next pulse photon beam, The photon density of the current pulsed photon beam. The preset adjustment step size for photon density is a fixed positive value. This formula shows that the adjustment amount of photon density is positively correlated with the difference between the peak frequency and the upper limit of the range. The larger the difference, the greater the reduction in photon density, thus avoiding over-adjustment that could cause the lattice energy to fall below the defect repair threshold.

[0046] While reducing photon density, the duration of the pulse interval is extended. The adjustment amount of the pulse interval is calculated using the following formula:

[0047] in, The length of the next pulse interval. This represents the length of the current pulse interval. The preset adjustment step size for the pulse interval is a fixed positive value. Extending the pulse interval aims to provide lattice atoms with sufficient time to release excess energy through phonon-phonon scattering and phonon-defect scattering, causing the instantaneous energy of the lattice atoms to fall from near the upper limit of the metastable energy window back to the central region of the metastable energy window, i.e., the instantaneous lattice energy approaches... The position ensures that lattice atoms have enough energy for short-range atomic rearrangement while completely avoiding the risks of long-range migration.

[0048] During the process of lattice defect repair through short-range atomic rearrangement, the shift of the lattice absorption spectrum is monitored in real time. During defect repair, as the lattice order increases and lattice stress is released, the lattice constant of the semiconductor target undergoes a slight change, causing a shift in the resonant absorption wavelength of the lattice absorption spectrum. If the initial resonant absorption wavelength is used to generate the pulsed photon beam, a mismatch between photon energy and lattice vibration energy will occur, reducing energy absorption efficiency and affecting the controllability of the repair process.

[0049] The shift of the lattice absorption spectral line is calculated using the following formula:

[0050] in, This represents the offset of the lattice absorption spectral line. For the first The resonant absorption wavelength was remeasured after one pulse cycle. This is the initially calibrated resonant absorption wavelength. When the offset... Exceeding the preset allowable error range At that time, the resonant absorption wavelength is re-determined based on the offset lattice absorption spectrum, and the frequency of the subsequent pulsed photon beam is adjusted based on the re-determined resonant absorption wavelength, so that the frequency of the pulsed photon beam always matches the resonant absorption wavelength of the lattice, ensuring the efficiency and stability of energy injection.

[0051] After reducing the photon density of the next pulsed photon beam according to a preset step size, the pulsed photon beam is controlled to perform a two-dimensional scanning movement on the semiconductor target surface. For each spatial position of the two-dimensional scanning movement, the extraction of lattice vibration mode features and the adjustment of photon density are performed independently, so that all lattice atoms on the semiconductor target surface are repaired within the metastable energy window. The two-dimensional scanning movement adopts a continuous serpentine scanning path, and the scanning step size is matched with the spot diameter of the pulsed photon beam on the semiconductor target surface. The spots of adjacent scanning positions overlap by a preset proportion to avoid repair blind spots.

[0052] During the two-dimensional scanning movement, the scanning movement is paused at each new spatial position to execute a complete closed-loop control process, including pulsed photon beam emission, reflection spectrum acquisition, lattice vibration mode feature extraction, feature comparison, and pulse parameter adjustment. The closed-loop control process for each spatial position is completely independent, with pulse parameters adjusted independently based on the lattice state at that position, unaffected by parameters at adjacent positions. This independent control mechanism can adapt to differences in lattice defect density and initial stress state at different locations on the semiconductor target surface, avoiding problems of insufficient or excessive repair in localized areas.

[0053] The key parameters for two-dimensional scanning global repair and dynamic adjustment involved in this embodiment are shown in Table 3.

[0054] Table 3 Key Parameters for Two-Dimensional Scan Global Repair and Dynamic Adjustment ; Table 3 lists the target specifications for semiconductor targets of different sizes and doping types. The ratio of scanning step size to spot diameter is configured based on the target's repair uniformity requirements. The spot overlap ratio ensures full coverage of the scanning area. The photon density adjustment step size, pulse interval adjustment step size, frequency approximation threshold, and wavelength offset tolerance are calibrated based on the target's material properties and repair accuracy requirements. In practical applications, the corresponding parameters are selected from Table 3 according to the specifications of the semiconductor target to be processed and the repair requirements to complete the parameter configuration for the two-dimensional scanning and dynamic adjustment process.

[0055] This embodiment refines the dynamic adjustment strategy when the lattice state approaches the boundary of the safe range, adds a real-time correction mechanism for the resonant absorption wavelength, ensures the stability of energy injection, and adapts to the differences in lattice state at different locations through two-dimensional scanning and independent closed-loop control.

[0056] In yet another alternative embodiment, please refer to the appendix. Figure 6A microscopic order control system based on a metastable energy window is provided. This system is used to implement the aforementioned microscopic order control method. The system includes a transient energy source, a spectral acquisition device, and a pulse controller.

[0057] A transient energy source is used to emit pulsed photon beams of a specific frequency onto the surface of a semiconductor target, causing the lattice atoms of the semiconductor target to enter a metastable energy window. The transient energy source includes a wavelength tuning unit, a pulse generation unit, a beam shaping unit, and a two-dimensional scanning unit. The wavelength tuning unit adjusts the center frequency of the output pulsed photon beam according to the calibrated resonant absorption wavelength, matching the wavelength of the pulsed photon beam with the resonant absorption wavelength of the lattice. The pulse generation unit generates pulsed photon beams with a set photon density and duration, and can dynamically adjust the photon density and duration of the pulses according to adjustment commands. The beam shaping unit shapes the spot shape of the pulsed photon beam, creating a uniform energy distribution on the surface of the semiconductor target. The two-dimensional scanning unit controls the two-dimensional scanning movement of the pulsed photon beam on the surface of the semiconductor target.

[0058] The spectral acquisition unit is used to acquire the reflection spectrum of a semiconductor target in real time during the pulse interval of a pulsed photon beam, and extract lattice vibrational mode features from the reflection spectrum. The spectral acquisition unit includes a broadband probe light source, a beam splitting unit, a photoelectric detection unit, and a signal processing unit. The broadband probe light source emits probe light onto the surface of the semiconductor target during the pulse interval, providing a light source for the acquisition of the reflection spectrum; the beam splitting unit separates the incident probe light from the reflected light from the semiconductor target surface, and splits the reflected light into spectral components of different wavelengths; the photoelectric detection unit converts the split spectral components into corresponding electrical signals; the signal processing unit processes the acquired reflection spectrum signal, including wavelength-to-frequency domain conversion, Fourier transform, noise filtering, phonon characteristic peak identification, and parameter extraction, ultimately outputting the lattice vibrational mode features.

[0059] The pulse controller compares the lattice vibration mode characteristics with a preset metastable energy window boundary threshold, and dynamically adjusts the photon density and duration of the next pulse photon beam based on the comparison result, enabling lattice atoms to repair lattice defects through short-range atomic rearrangement within the metastable energy window. The pulse controller includes a parameter storage unit, a feature comparison unit, a pulse adjustment unit, and a timing control unit. The parameter storage unit stores preset metastable energy window boundary thresholds, spectral processing parameters, pulse adjustment parameters, and scanning control parameters. The feature comparison unit receives lattice vibration mode features output by the spectral acquisition unit, compares them with preset boundary thresholds, and outputs the comparison results. The pulse adjustment unit generates pulse parameter adjustment commands based on the comparison results and sends them to the pulse generation unit and wavelength tuning unit of the transient energy source to dynamically adjust the photon density, duration, and center frequency of the next pulse photon beam. The timing control unit generates a synchronization timing signal for the entire system, controls the pulse emission timing of the transient energy source, the spectral acquisition timing of the spectral acquisition unit, and the movement timing of the two-dimensional scanning unit, ensuring that the spectral acquisition process is entirely within the pulse interval period and avoiding interference from intense pulse light on spectral acquisition.

[0060] The synchronization timing generated by the timing control unit must meet the following constraints:

[0061]

[0062]

[0063] in, This represents the start time of spectral acquisition. This is the end time of spectral acquisition. The pulse number. The duration of a single pulsed photon beam. This refers to the pulse interval length corresponding to a single pulse. This is the delay time after the pulse emission ends, used to avoid interference from pulse afterglow on spectral acquisition. The duration of a single spectral acquisition is defined by these constraints. These constraints ensure that the entire process of a single spectral acquisition occurs within the pulse interval, avoiding optical interference and guaranteeing the accuracy of the spectral acquisition.

[0064] The system's workflow is as follows: First, the parameter storage unit of the pulse controller loads the preset parameters corresponding to the semiconductor target to be processed. The wavelength tuning unit of the transient energy source sets the center frequency of the pulsed photon beam according to the initially calibrated resonant absorption wavelength. The pulse generation unit generates a pulsed photon beam according to the initial parameters and emits it to the target position on the semiconductor target surface through the beam shaping unit and the two-dimensional scanning unit, so that the lattice atoms enter the metastable energy window. After the pulse emission is completed, a pulse interval period is entered. The timing control unit triggers the spectral acquisition unit to start spectral acquisition. The broadband detection light source emits detection light. The beam splitting unit and the photoelectric detection unit collect the reflection spectrum. The signal processing unit processes the reflection spectrum, extracts the lattice vibration mode features, and sends them to the pulse controller. The feature comparison unit of the pulse controller compares the lattice vibration mode features with the preset boundary threshold. The pulse adjustment unit generates a pulse parameter adjustment command according to the comparison result and sends it to the transient energy source to adjust the photon density, duration, and center frequency of the next pulse. After the repair process at the current position is completed, the two-dimensional scanning unit controls the pulsed photon beam to move to the next spatial position and repeats the above closed-loop control process until the entire surface of the semiconductor target is repaired.

[0065] The core functions and parameter correspondences of each module in the system involved in this embodiment are shown in Table 4.

[0066] Table 4. Correspondence of Core Functions and Parameters of Each Module in the Micro-order Regulation System ; In Table 4, the adjustable parameter range of each module is configured according to the material type, size specifications and repair requirements of the semiconductor target. The corresponding method flow is the execution step of the module in the micro-order control method.

[0067] This embodiment constructs a complete microscopic order control system through the coordinated operation of a transient energy source, a spectral acquisition device, and a pulse controller. This system confines the energy of lattice atoms within a metastable energy window, completes the repair of lattice defects, and avoids the long-range migration of doped atoms.

Claims

1. A method for microscopic order control based on metastable energy windows, characterized in that, include: A pulsed photon beam of a specific frequency is emitted onto the surface of a semiconductor target, causing the lattice atoms of the semiconductor target to enter a metastable energy window; During the pulse interval of the pulsed photon beam, the reflection spectrum of the semiconductor target is acquired in real time, and the lattice vibration mode characteristics are extracted from the reflection spectrum. The lattice vibration mode characteristics are compared with a preset metastable energy window boundary threshold. Based on the comparison results, the photon density and duration of the next pulsed photon beam are dynamically adjusted so that the lattice atoms can complete the lattice defect repair through short-range atomic rearrangement within the metastable energy window.

2. The method according to claim 1, characterized in that, The method of emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target includes: acquiring the lattice absorption spectrum of the semiconductor target; The matching resonant absorption wavelength is determined based on the lattice absorption spectrum, and a pulsed photon beam of the specific frequency is generated based on the resonant absorption wavelength.

3. The method according to claim 1, characterized in that, Extracting lattice vibration mode features from the reflection spectrum includes: performing a Fourier transform on the reflection spectrum to obtain a frequency domain spectral signal; Phonon characteristic peaks are separated from the frequency domain spectral signal, and the peak frequency and full width at half maximum (FWHM) of the phonon characteristic peaks are used as the lattice vibration mode characteristics.

4. The method according to claim 3, characterized in that, The step of comparing the lattice vibration mode characteristics with a preset metastable energy window boundary threshold includes: determining whether the peak frequency of the phonon characteristic peak falls within a preset frequency safety range, and whether the full width at half maximum (FWHM) is less than a preset broadening threshold. If the peak frequency falls within the frequency safety range and the half-width at half-maximum (WHM) is less than the broadening threshold, then the lattice atom is determined to be within the metastable energy window.

5. The method according to claim 4, characterized in that, The step of dynamically adjusting the photon density and duration of the next pulsed photon beam based on the comparison result includes: when it is determined that the lattice atom is within the metastable energy window, keeping the photon density and duration of the next pulsed photon beam unchanged; When it is determined that the peak frequency does not fall within the frequency safety range or the half-width is greater than the broadening threshold, the output of the next pulse photon beam is cut off.

6. The method according to claim 4, characterized in that, The method of dynamically adjusting the photon density and duration of the next pulse photon beam based on the comparison result further includes: when it is determined that the peak frequency is close to the upper limit of the frequency safety range, reducing the photon density of the next pulse photon beam by a preset step size and extending the duration of the pulse interval so that the lattice atoms return to the central region of the metastable energy window.

7. The method according to claim 2, characterized in that, The process of repairing lattice defects by short-range atomic rearrangement of lattice atoms also includes: real-time monitoring of the offset of the lattice absorption spectral lines; When the offset exceeds the allowable error range, the resonant absorption wavelength is re-determined based on the offset lattice absorption spectrum, and the frequency of the subsequent pulsed photon beam is adjusted based on the re-determined resonant absorption wavelength.

8. The method according to claim 3, characterized in that, After obtaining the frequency domain spectral signal, the method further includes: identifying the plasma oscillation noise band in the frequency domain spectral signal; A notch filter is used to filter out the plasma oscillation noise band, thereby improving the extraction accuracy of the lattice vibration mode features.

9. The method according to claim 6, characterized in that, After reducing the photon density of the next pulsed photon beam by a preset step size, the method further includes: controlling the pulsed photon beam to perform a two-dimensional scanning movement on the surface of the semiconductor target. For each spatial position of the two-dimensional scanning movement, the extraction of the lattice vibration mode features and the adjustment of the photon density are performed independently.

10. A microscopic order control system based on a metastable energy window, characterized in that, A method for microscopic order control based on a metastable energy window, as described in any one of claims 1-9, includes: a transient energy source for emitting a pulsed photon beam of a specific frequency onto the surface of a semiconductor target, thereby causing the lattice atoms of the semiconductor target to enter the metastable energy window; A spectral acquisition device is used to acquire the reflection spectrum of the semiconductor target in real time during the pulse interval of the pulsed photon beam, and extract lattice vibration mode features from the reflection spectrum; A pulse controller is used to compare the lattice vibration mode characteristics with a preset metastable energy window boundary threshold, and dynamically adjust the photon density and duration of the next pulse photon beam according to the comparison result.

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