Fluorescence detection device

Abstract

Provided is a fluorescence detection device that can be easily downsized as a whole. In the fluorescence detection device, a light suppression layer has a plurality of opening portions surrounded by side walls of through holes, a plurality of sample-receiving portions in which samples are received are arranged, the opening portions are arranged at positions overlapping the sample-receiving portions, and a light-receiving element is arranged so as to surround the sample-receiving portions in plan view.

Description

Technical Field

[0001] This invention relates to a fluorescence detection device. Background Technology

[0002] A detection device is known that has an optical system with a dichroic mirror to detect fluorescence reflected from a sample (e.g., Patent Document 1).

[0003] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2005-321753 Summary of the Invention

[0004] The technical problem that the invention aims to solve However, the detection device described in Reference 1 is a structure that allows the excitation light to be reflected by a dichroic mirror and irradiate the sample. Therefore, the number of parts increases and the overall detection device may become larger.

[0005] The purpose of this invention is to provide a fluorescence detection device that can be easily miniaturized as a whole.

[0006] Means for solving technical problems One aspect of the fluorescence detection device of the present invention includes: a substrate; a light source for irradiating a sample with excitation light; and a detection unit for detecting fluorescence, the detection unit having: a light-transmitting layer having a first surface and a second surface opposite to the first surface; a through-hole penetrating the light-guide layer from the first surface to the second surface in a direction perpendicular to the substrate; a light-receiving element covered by the light-guide layer for receiving fluorescence emitted by the sample through the excitation light; and a light-suppressing layer disposed on the light-guide layer for suppressing the transmission of the excitation light, the light-suppressing layer having a plurality of openings surrounded by the sidewalls of the through-hole, and a plurality of receiving portions for receiving the sample disposed at positions overlapping with the receiving portions, the light-receiving element being disposed such that it surrounds the receiving portions when viewed from above. Attached Figure Description

[0007] Figure 1 This is a top view showing the fluorescence detection device of the first embodiment.

[0008] Figure 2 This is a block diagram illustrating an example of the configuration of the fluorescence detection device according to the first embodiment.

[0009] Figure 3 This is a circuit diagram showing the sensor pixels of the first embodiment.

[0010] Figure 4 This is a top view showing the light guide layer of the fluorescence detection device according to the first embodiment.

[0011] Figure 5 This is a top view showing the light suppression layer of the fluorescence detection device in the first embodiment.

[0012] Figure 6 yes Figure 4 Sectional view of VI-VI'.

[0013] Figure 7 yes Figure 4 Sectional view of VII-VII′.

[0014] Figure 8A This is a cross-sectional view of a fluorescence detection device according to a modified example 1 of the first embodiment.

[0015] Figure 8B This is a cross-sectional view of a fluorescence detection device according to a modified example 2 of the first embodiment.

[0016] Figure 9 This is a top view of the fluorescence detection device according to the second embodiment.

[0017] Figure 10 yes Figure 9 X-X' sectional view.

[0018] Figure 11 This is a top view of the fluorescence detection device according to the third embodiment.

[0019] Figure 12 yes Figure 11 Sectional view of XII-XII'.

[0020] Figure 13 This is a top view of the fluorescence detection device according to the fourth embodiment.

[0021] Figure 14 yes Figure 13 Sectional view of XIV-XIV'. Detailed Implementation

[0022] The embodiments for carrying out the invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments described below. Furthermore, the constituent elements described below include elements readily conceived by those skilled in the art, and substantially the same elements. Moreover, the constituent elements described below can be appropriately combined. In addition, the disclosure is merely an example, and appropriate modifications that maintain the spirit of the invention and are readily conceived by those skilled in the art are naturally included within the scope of the present invention. Furthermore, in order to make the description clearer, the drawings sometimes schematically show the width, thickness, shape, etc., of various parts compared to the actual embodiment, but this is merely an example and does not limit the interpretation of the present invention. Additionally, in this specification and the drawings, the same reference numerals are sometimes used for elements that are the same as those described with respect to previously presented figures, and detailed descriptions are appropriately omitted.

[0023] In this specification and claims, when describing the arrangement of other structures on top of a certain structure, the phrase "on top of" includes, unless otherwise specified, two scenarios: one where other structures are arranged directly above a certain structure in connection with it, and the other where other structures are arranged above a certain structure but separated by other structures.

[0024] (First Implementation) Figure 1 This is a top view showing the fluorescence detection device of the first embodiment. (Example) Figure 1 As shown, the fluorescence detection device 1 includes a sensor section 10 and a detection section 50. The detection section 50 has a plurality of light-receiving elements 31 and a plurality of receiving sections 300 on a substrate 21. The receiving sections 300 are arranged in a matrix, for example. The receiving sections 300 are holding sections for holding samples. The detection section 50 has a light guide layer 51. The plurality of light-receiving elements 31 disposed inside the light guide layer 51 are arranged in a grid pattern surrounding the receiving sections 300 when viewed from above.

[0025] Figure 2 This is a block diagram illustrating an example configuration of the fluorescence detection device according to the first embodiment. For example... Figure 2 As shown, the sensor unit 10 includes a substrate 21, a plurality of sensor pixels 3 (light-receiving elements 31) disposed on the substrate 21, a gate line driving circuit 15, a signal line driving circuit 16, and a detection control circuit 11.

[0026] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is the area where multiple sensor pixels 3 are disposed. Here, each sensor pixel 3 has a light-receiving element 31 and a light sensor with a housing portion 300, and also includes a capacitor element Ca and a driving transistor Tr, which will be described later. The peripheral area GA is the area between the outer periphery of the detection area AA and the outer edge of the substrate 21, and is the area where multiple sensor pixels 3 are not disposed. The gate line driving circuit 15, the signal line driving circuit 16, and the detection control circuit 11 are disposed in the peripheral area GA. The substrate 21 is a driving circuit substrate for driving sensors for each defined detection area, and is also referred to as a backplane or an active matrix substrate.

[0027] Furthermore, in the following description, the first direction Dx is a direction within a plane parallel to the substrate 21. The second direction Dy is a direction within a plane parallel to the substrate 21, and is orthogonal to the first direction Dx. Alternatively, the second direction Dy may not be orthogonal to the first direction Dx but may intersect it. The third direction Dz is a direction orthogonal to both the first direction Dx and the second direction Dy, and is the normal direction of the principal surface of the substrate 21. Additionally, "top view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0028] Each of the multiple sensor pixels 3 has the function of outputting an electrical signal corresponding to the light incident on its respective light-receiving element 31, and can detect the intensity of fluorescence generated in the housing 300 via the detection circuit 48 described later. The light-receiving element 31 is a photoelectric conversion element, such as an OPD (Organic Photodiode) or PIN (Positive Intrinsic Negative) photodiode using organic semiconductors. The multiple sensor pixels 3 (multiple light-receiving elements 31) are arranged in a matrix in the detection area AA of the substrate 21.

[0029] The detection control circuit 11 supplies control signals Sa and Sb (see reference) to the gate line drive circuit 15 and the signal line drive circuit 16 respectively. Figure 2 ), and supplies a reset signal RST to the reset transistor TrR (in Figure 2 Not shown in the image, please refer to the diagram. Figure 3 The gate line drive circuit 15 outputs the gate drive signal to the gate line GL (see reference 15) based on the control signal Sa. Figure 3 The signal line drive circuit 16 electrically connects the signal line SL selected based on the control signal Sb to the detection control circuit 11.

[0030] Sensor pixel 3 outputs an electrical signal as a detection signal Vdet to signal line drive circuit 16. Detection control circuit 11 processes the detection signals Vdet from multiple sensor pixels 3 and outputs the sensor value Vo based on the detection signal Vdet to host IC (not shown). Thus, fluorescence detection device 1 detects the sample 54 (refer to...) Figure 7 Information related to ( ).

[0031] like Figure 2 As shown, the detection control circuit 11 includes a detection signal amplitude adjustment circuit 41, an A / D conversion circuit 42, and a signal processing circuit 43. The detection signal amplitude adjustment circuit 41 and the A / D conversion circuit 42 of the detection control circuit 11 are connected to the signal line SL (refer to...). Figure 3 The detection circuit 48 is connected to and performs signal processing on the detection signal Vdet.

[0032] Next, an example of the configuration of the sensor unit 10 will be described. Figure 3 This is a circuit diagram showing the sensor pixels of the first embodiment. For example... Figure 3 As shown, the capacitor element Ca is a capacitor (sensor capacitor) formed on the light-receiving element 31 and connected in parallel with the light-receiving element 31.

[0033] exist Figure 3The diagram shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy, out of a plurality of gate lines GL. Additionally, it shows two signal lines SL(n) and SL(n+1) arranged in the first direction Dx, out of a plurality of signal lines SL. Sensor pixel 3 is the region surrounded by the gate lines GL and the signal lines SL.

[0034] The driving transistor Tr is disposed correspondingly to a plurality of light-receiving elements 31. The driving transistor Tr is composed of a thin film transistor, and in this example, it is composed of an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0035] Multiple gate lines GL are respectively connected to the gates of multiple driving transistors Tr arranged in the first direction Dx. Multiple signal lines SL are respectively connected to one of the source and drain of multiple driving transistors Tr arranged in the second direction Dy. The other of the source and drain of multiple driving transistors Tr is connected to the cathode of the light-receiving element 31 and the capacitor element Ca.

[0036] A sensor power signal VDDSNS is supplied from the power supply circuit (not shown) to the anode of the light-receiving element 31. Additionally, a sensor reference voltage COM, which serves as the initial potential for the signal line SL and the capacitor element Ca, is supplied from the power supply circuit via the reset transistor TrR.

[0037] When light illuminates sensor pixel 3 during exposure, a current corresponding to the amount of light flows in the light-receiving element 31, thereby accumulating charge in the capacitor element Ca. When the drive transistor Tr is turned on during readout, current flows through the signal line SL according to the charge accumulated in the capacitor element Ca. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line drive circuit 16. Thus, the fluorescence detection device 1 can detect a signal corresponding to the amount of light illuminating the light-receiving element 31 for each sensor pixel 3.

[0038] During readout, switch SSW is turned on, and detection circuit 48 is connected to signal line SL. Detection signal amplitude adjustment circuit 41 of detection circuit 48 converts the signal to a voltage corresponding to the current or charge supplied from signal line SL. A reference potential (Vref) with a fixed potential is input to the non-inverting input (+) of detection signal amplitude adjustment circuit 41, and signal line SL is connected to the inverting input (-). In this embodiment, a signal identical to the sensor reference voltage COM is input as the reference potential (Vref) voltage. Furthermore, detection signal amplitude adjustment circuit 41 includes a capacitor element Cb and a reset switch RSW. During reset, reset switch RSW is turned on, and the charge on capacitor element Cb is reset.

[0039] As mentioned above, Figure 2 and Figure 3 The detection signal amplitude adjustment circuit 41 shown is a circuit that adjusts the amplitude of the detection signal Vdet output from the sensor pixel 3, and includes, for example, an amplifier.

[0040] like Figure 2 and Figure 3 As shown, the A / D conversion circuit 42 converts the analog signal output from the detection signal amplitude adjustment circuit 41 into a digital signal. Figure 2 As shown, the signal processing circuit 43 processes the digital signal from the A / D conversion circuit 42 and sends the sensor value Vo to the host IC (not shown). Thus, the signal processing circuit 43 can be described as a circuit that processes the detection signal Vdet from multiple light-receiving elements 31.

[0041] Furthermore, the driving transistor Tr is not limited to n-type TFTs; it can also be constructed from p-type TFTs. In addition, Figure 3 The pixel circuit of the sensor pixel 3 shown is just one example. The sensor pixel 3 can be equipped with multiple transistors corresponding to a light-receiving element 31.

[0042] Figure 4 This is a top view showing the light guide layer of the fluorescence detection device according to the first embodiment. Figure 5 This is a top view showing the light suppression layer of the fluorescence detection device in the first embodiment. Figure 6 yes Figure 4 VI-VI′ sectional view. Figure 7 yes Figure 4 Sectional view of VII-VII′.

[0043] like Figure 4 The shaded area and Figure 7 As shown, the light guide layer 51 covers the light-receiving element 31 and is disposed on the insulating film 27. It is a transparent layer provided for efficiently guiding the fluorescence L2. A through-hole 53 extending from the first surface 511 of the light guide layer 51 to the second surface 512 of the light guide layer 51 forms a receiving portion 300. The receiving portion 300 has an opening bottom surface 53a of the through-hole 53 in the second surface 512. Figure 4 and Figure 7 As shown, the sidewall 513 of the receiving section 300 decreases in size as it approaches the insulating film 27. Figure 4 As shown, a housing 300 is disposed at a position surrounded by a gate line GL and a signal line SL. The housing 300 is circular when viewed from above. However, the shape of the housing 300 is not particularly limited, and it can also be quadrilateral or polygonal when viewed from above.

[0044] like Figure 4As shown, a light-receiving element 31 is arranged to surround a receiving portion 300. Furthermore, as... Figure 5 As shown, the light suppression layer 69 is disposed above the light guide layer 51 relative to the third direction Dz, and is positioned overlapping the light receiving element 31 when viewed from above. The light suppression layer 69 will be described later. Figure 7 Detailed explanation in the text. Furthermore, relative to being located in... Figure 7 The light-receiving elements 31 around a housing 300 shown are sometimes referred to as light-receiving elements 31a and light-receiving elements 31b for ease of explanation.

[0045] Figure 4 The driving transistor Tr shown has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GL and is disposed intersecting the gate electrode 64 when viewed from above. The gate electrode 64 is connected to the gate line GL and extends in a direction orthogonal to the gate line GL (second direction Dy).

[0046] One end of the semiconductor layer 61 is connected to the source electrode 62 via contact hole CH2. The source electrode 62 is connected to the bonding pad 66 and is led out to the lower electrode 23 of the light-receiving element 31 (see reference). Figure 6 The lower electrode 23 is connected to the connection pad 66 via contact hole CH1 in the central part of the semiconductor layer 61. Through this structure, the source electrode 62 of the driving transistor Tr is electrically connected to the light-receiving element 31. Additionally, the other end of the semiconductor layer 61 is connected to the drain electrode 63 via contact hole CH3. The drain electrode 63 is connected to the signal line SL.

[0047] like Figure 6 As shown, the fluorescence detection device 1 has a circuit forming layer 70, an insulating film 27, and a light-receiving element 31 sequentially stacked on a substrate 21. The substrate 21 is an insulating substrate, such as a glass substrate made of quartz or alkali-free glass.

[0048] A circuit forming layer 70 is disposed on the substrate 21. An insulating film 27 covers the signal line SL and is disposed on the circuit forming layer 70 containing the driving transistor Tr. The insulating film 27 is an organic planarization film formed of an organic insulating material.

[0049] like Figure 6 As shown, the circuit forming layer 70 has an undercoat 91, a gate insulating film 92, and an interlayer insulating film 93 as insulating films.

[0050] The primer film 91 is, for example, a two-layer stacked structure having insulating films 91a and 91b. The primer film 91 is, for example, formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. Furthermore, the structure of the primer film 91 is not limited to... Figure 6The structure shown. For example, the primer film 91 can be a single layer or a stack of three or more layers.

[0051] A light-shielding film 670 is disposed on the insulating film 91a. The light-shielding film 670 is disposed between the semiconductor layer 61 and the substrate 21. The light-shielding film 670 can suppress the intrusion of light from the substrate 21 side into the channel region of the semiconductor layer 61.

[0052] The driving transistor Tr is composed of a thin-film transistor and is disposed on the substrate 21. A semiconductor layer 61 is disposed on the base coating film 91. A gate insulating film 92 covers the semiconductor layer 61 and is disposed on the base coating film 91. The gate insulating film 92 is, for example, an inorganic insulating film such as silicon oxide. A gate electrode 64 is disposed on the gate insulating film 92.

[0053] In this embodiment, the driving transistor Tr has a top-gate structure. The driving transistor Tr is not limited to this; it can be a bottom-gate structure or a dual-gate structure with gate electrodes 64 disposed on both the upper and lower sides of the semiconductor layer 61.

[0054] An interlayer insulating film 93 covers the gate electrode 64 and is disposed on the gate insulating film 92. The interlayer insulating film 93 may have, for example, a stacked structure of a silicon nitride film and a silicon oxide film. A source electrode 62 and a drain electrode 63 are disposed on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a contact hole CH2 disposed in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a contact hole CH3 disposed in the gate insulating film 92 and the interlayer insulating film 93.

[0055] Additionally, the contact hole CH1 is disposed on the lower electrode 23, penetrating the insulating film 27 in the thickness direction (third direction Dz). The lower electrode 23 is connected to the connection pad 66 at the bottom of the contact hole CH1.

[0056] An insulating film 27 is disposed on the interlayer insulating film 93, covering the source electrode 62 and drain electrode 63 of the driving transistor Tr. In this embodiment, the contact hole CH1 of the insulating film 27 is disposed in the region overlapping with the source electrode 62.

[0057] A light-receiving element 31 is disposed on an insulating film 27. The light-receiving element 31 has a lower electrode 23, a lower buffer layer 37, an active layer 36, an upper buffer layer 38, and an upper electrode 24. The light-receiving element 31 is constructed by sequentially stacking the lower electrode 23, lower buffer layer 37, active layer 36, upper buffer layer 38, and upper electrode 24. The light-receiving element 31 is an OPD (Organic Photodiode) using an organic semiconductor as the active layer 36. The shape of the light-receiving element 31, when viewed from above, is, for example, rectangular in shape with a circular opening inside. Alternatively, the outer shape of the light-receiving element 31 can also be square.

[0058] The lower electrode 23 is the cathode electrode of the light-receiving element 31, and is formed of a conductive material such as ITO (Indium Tin Oxide). The lower electrode 23 is disposed separately for each light-receiving element 31. In addition, the lower buffer layer 32, the active layer 36, the upper buffer layer 38, and the upper electrode 24 are disposed continuously across multiple light-receiving elements 31. Specifically, the lower buffer layer 37, the active layer 36, the upper buffer layer 38, and the upper electrode 24 are disposed overlapping with the lower electrode 23 of the adjacent light-receiving element 31. The lower electrode 23 is electrically connected to the source electrode 62 at the bottom of the contact hole CH1 near the driving transistor Tr. Furthermore, the lower buffer layer 32, the active layer 36, the upper buffer layer 33, and the upper electrode 24 can also be disposed separately for each sensor pixel 3.

[0059] The properties of the active layer 36 (e.g., voltage and current characteristics, resistance value) vary depending on the light irradiated. Organic materials are used as the material for the active layer 36. Specifically, the active layer 36 is a bulk heterostructure consisting of a p-type organic semiconductor and an n-type fullerene derivative (PCBM) that is an n-type organic semiconductor. Examples of low-molecular-weight organic materials that can be used for the active layer 36 include C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (copper fluoride phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (a derivative of perylene).

[0060] The active layer 36 can be formed using these low-molecular-weight organic materials via a dry process. In this case, the active layer 36 can be, for example, a laminate of CuPc and F16CuPc, or a laminate of rubrene and C60. The active layer 36 can also be formed via a wet process. In this case, the active layer 36 uses a material composed of a combination of the aforementioned low-molecular-weight organic materials and high-molecular-weight organic materials. Examples of high-molecular-weight organic materials used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 36 can be a film of P3HT mixed with PCBM, or a film of F8BT mixed with PDI.

[0061] The lower buffer layer 37 is an electron transport layer, and the upper buffer layer 38 is a hole transport layer. The lower buffer layer 37 and the upper buffer layer 38 are provided to facilitate the arrival of electrons and holes generated in the active layer 36 at the lower electrode 23 or the upper electrode 24. The lower buffer layer 37 (electron transport layer) is directly connected to the lower electrode 23. The active layer 36 is directly connected to the lower buffer layer 37. The electron transport layer is made of materials such as ethoxylated polyethyleneimine (PEIE).

[0062] The upper buffer layer 38 (hole transport layer) is directly connected to the active layer 36, and the upper electrode 24 is directly connected to the upper buffer layer 38. The hole transport layer is made of a metal oxide layer. Tungsten oxide (WO3) and molybdenum oxide (MoO3) are used as metal oxide layers.

[0063] Furthermore, the materials and manufacturing methods of the lower buffer layer 37, active layer 36, and upper buffer layer 38 are merely one example; other materials and manufacturing methods are also possible. For instance, the lower buffer layer 37 and upper buffer layer 38 are not limited to single-layer films; they may also include hole-blocking layers and electron-blocking layers to form a laminated film. Additionally, the structure of the sensor pixel circuit adopts a structure appropriate to the orientation of the diodes.

[0064] The upper electrode 24 is disposed on the upper buffer layer 38. The upper electrode 24 is the anode electrode of the light-receiving element 31 and is formed continuously throughout the detection area AA. In other words, the upper electrode 24 is continuously disposed on multiple light-receiving elements 31. The upper electrode 24 is opposed to multiple lower electrodes 23 through the lower buffer layer 37, the active layer 36, and the upper buffer layer 38. The upper electrode 24 is formed, for example, from a transparent conductive material such as ITO or IZO. Alternatively, the upper electrode 24 can be made of a thin film of metal such as silver (Ag), aluminum (Al), or gold (Au) that is transparent by setting its thickness to about tens of nm. In addition, the upper electrode 24 can also be a laminate of multiple transparent conductive materials.

[0065] Therefore, by placing the driving transistor Tr and the light-receiving element 31 on the same substrate 21, a thin and large-area fluorescence detection device can be constructed.

[0066] like Figure 7 As shown, the fluorescence detection device 1 includes a light source 60, a substrate 21, a circuit forming layer 70, an insulating film 27, and a detection unit 50. The fluorescence detection device 1 has the substrate 21, the circuit forming layer 70, the insulating film 27, and the detection unit 50 sequentially stacked on a third direction Dz perpendicular to the substrate 21.

[0067] When the fluorescence detection device 1 irradiates the sample 54 with excitation light L1 of a specified wavelength, the substance within the sample 54 is excited and emits fluorescence L2, which has a spectroscopic characteristic with a peak wavelength slightly deviating from the wavelength of the excitation light. The fluorescence detection device 1 can observe the intensity of the fluorescence L2 and the luminescence intensity distribution of the fluorescence L2.

[0068] The light source 60 is a light-emitting element that emits light by oscillating a predetermined excitation light L1 towards the upper surface of the detection unit 50.

[0069] The detection unit 50 includes: a light guide layer 51 that is transparent and has a first surface 511 and a second surface 512 opposite to the first surface 511; a through hole 53 that extends from the first surface 511 to the second surface 512; and a light receiving element 31 that is covered by the light guide layer 51 and receives the fluorescence L2 emitted by the sample 54 due to the excitation light L1.

[0070] Figure 7 The light guide layer 51 shown is formed, for example, from an inorganic insulating film such as silicon nitride (SiN) or silicon oxide nitride (SiON). Alternatively, the light guide layer 51 can also be an organic material such as acrylic resin that is transparent to light.

[0071] In addition, the refractive index of the light guide layer 51 is preferably higher than that of the substrate 21 or the fluorescent solution, and preferably has high transmittance for fluorescence L2 and low transmittance for excitation light L1.

[0072] The bottom surface 53a of the opening is blocked by the upper surface 270 of the insulating film 27. The light guide layer 51 is located on the upper surface 270 of the insulating film 27 and is integrally formed with the insulating film 27.

[0073] Multiple receiving portions 300 for receiving the sample 54 are arranged and surrounded by the sidewalls 513 of the through holes 53.

[0074] like Figure 7 As shown, the detection unit 50 includes a light suppression layer 69. The light suppression layer 69 is a layer that suppresses the transmission of excitation light, and includes a light-shielding layer 67 and a reflective layer 68. The detection unit 50 is stacked in the order of light-guiding layer 51, reflective layer 68, and light-shielding layer 67. The light-shielding layer 67 has a plurality of openings 67a extending through a third direction Dz, and the reflective layer 68 has a plurality of openings 68a extending through a third direction Dz. The openings 67a and 68a are positioned overlapping with the receiving unit 300.

[0075] In addition, such as Figure 5 As shown, the shapes of the openings 67a and 68a are the same size and shape as the receiving portion 300 when viewed from above, for example, they are circular when viewed from above.

[0076] The light-shielding layer 67 suppresses the transmission of the excitation light L1 emitted from the light source 60 by blocking the excitation light L1. The light-shielding layer 67 is formed of a black resin, a metal such as molybdenum (Mo), etc., which have light-shielding properties and high absorption rate of the excitation light L1.

[0077] Therefore, the excitation light L1 incident on the light-shielding layer 67 can be blocked, and the excitation light L1 can be suppressed from reaching the light-receiving element 31.

[0078] The reflective layer 68 suppresses the transmission of the excitation light L1 emitted from the light source 60 by reflecting the excitation light L1. The reflective layer 68 is formed of a resin, metal, or the like, which has a high reflectivity for the fluorescent L2.

[0079] Thus, the fluorescence L2 can be reflected and propagated into the light guide layer 51, so that the fluorescence L2 can be incident on the light receiving element 31.

[0080] The receiving section 300 and the openings 67a and 68a are filled with the specimen, and the specimen 54 is contained inside the receiving section 300.

[0081] Here, the specimen refers to a substance, for example, a sample stained with fluorescent dye, dispersed in a liquid, or dissolved in a solvent to form a fluorescent solution. There are no particular limitations on the fluorescent dye or solvent, as long as it is suitable for the analyte.

[0082] Fluorescent substances used as sample 54 include, for example, organic pigments (fluorescein, rhodamine or their derivatives, Texas red, sulforhodamine), amino acids (tryptophan, phenylalanine, tyrosine), base pair derivatives, chlorophyll, rare earth elements, fluorescent proteins, fluorescent probes, etc.

[0083] Therefore, the excitation light L1 and the fluorescence L2 can be separated without using a cutoff filter, thus making it easy to miniaturize the entire device.

[0084] Furthermore, the light suppression layer 69 suppresses the excitation light L1 from incident onto the light-receiving element 31. Therefore, the fluorescence L2 generated in each containment section 300 based on the sample is incident onto the light-receiving element 31 while the excitation light L1 is suppressed. As a result, the detection accuracy of the fluorescence L2 generated in each containment section 300 based on the sample is improved.

[0085] Here, the light guide layer 51 is transparent, therefore... Figure 7 The fluorescence L2 generated in the specific receiving section 300 shown may reach not only the intended receiving element 31, but also the receiving elements 31a and 31b. However, the receiving... Figure 7 The amount of fluorescence L2 generated in the specific receiving section 300 shown is greater in the light-receiving element 31 that was originally intended to receive it than in the adjacent light-receiving elements 31a and 31b. Therefore, regarding the detected fluorescence intensity, Figure 7 Around the specific receiving portion 300 shown, the light-receiving element 31, which is closest to the receiving portion 300, has the highest light-receiving element, while the light-receiving elements 31a and 31b, which are farther away from the receiving portion 300, have a lower light-receiving element. In other words, the light-receiving element 31 is more strongly affected by the fluorescence L2 generated in the specific receiving portion 300, while the fluorescence L2 generated in the receiving portion 300 closest to the light-receiving element 31a and 31b has a weaker effect. Conversely, the light-receiving elements 31a and 31b are each strongly affected by the fluorescence L2 generated in the receiving portion 300 closest to the light-receiving element 31, while the fluorescence L2 generated in the specific receiving portion 300 closest to the light-receiving element 31 has a weaker effect.

[0086] Therefore, if the intensity distribution among multiple light-receiving elements 31, including light-receiving elements 31a and 31b, is statistically determined, the detection area AA (refer to) can be measured. Figure 1 The fluorescence intensity distribution within the plane of the container 300 is determined. As a result, based on the fluorescence intensity distribution, it is possible to determine which containment section 300 has a high fluorescence intensity.

[0087] (Modification 1 of the first embodiment) Figure 8A This is a cross-sectional view of a fluorescence detection device according to a modified example 1 of the first embodiment.

[0088] like Figure 8AAs shown, in the fluorescence detection device 1a of the first embodiment's modified example 1, it is also possible to have a structure in which the reflective layer 68 is not provided, but only the light-shielding layer 67 is provided on the light guide layer 51. In this way, the excitation light L1 incident on the light-shielding layer 67 can be blocked, and the excitation light L1 can be suppressed from reaching the light-receiving element 31.

[0089] (Modification 2 of the first embodiment) Figure 8B This is a cross-sectional view of a fluorescence detection device according to a modified example 2 of the first embodiment.

[0090] like Figure 8B As shown, in the fluorescence detection device 1b of the first embodiment's modified example 2, it is also possible to have a structure in which the light-shielding layer 67 is not provided, but only the reflective layer 68 is provided on the light guide layer 51. In this way, the excitation light L1 incident on the reflective layer 68 is reflected as the reflected light L3, and the excitation light L1 can be suppressed from reaching the light receiving element 31.

[0091] (Second Implementation) Figure 9 This is a top view of the fluorescence detection device according to the second embodiment. Figure 10 yes Figure 9 XX′ sectional view. Furthermore, in the following description, the same reference numerals are used for the same constituent elements as those described in the above embodiments, and repeated descriptions are omitted.

[0092] like Figure 9 and Figure 10 As shown, the fluorescence detection device 1A includes a substrate 21, a circuit forming layer 70, an insulating film 27, and a detection unit 50. The detection unit 50 also includes a light-shielding film LS1. The light-shielding film LS1 is formed of a black resin, a metal such as molybdenum (Mo), etc., which have light-shielding properties for fluorescence L2 and have a high absorption rate of fluorescence L2.

[0093] like Figure 9 As shown, when viewed from above, the light-shielding film LS1 is positioned where it overlaps with the gate line GL and signal line SL, thus surrounding each light-receiving element 31. Figure 10 As shown, the light-shielding film LS1 is covered by the light-guiding layer 51.

[0094] Without using the light-shielding film LS1 to surround adjacent light-receiving elements 31, it is possible to use another light-receiving element 31 to detect the fluorescence L2 emitted from the sample in the receiving section adjacent to one light-receiving element 31. However, when each light-receiving element 31 is surrounded by the light-shielding film LS1, the fluorescence L2 emitted from one light-receiving element 31 is not detected without using another light-receiving element 31.

[0095] Therefore, leakage of fluorescence L2 from the light-receiving element 31 surrounded by the light-shielding film LS1 can be suppressed, and the fluorescence detection accuracy of the sample in each housing part 300 of the light-receiving element 31 can be improved.

[0096] Furthermore, the light-shielding film LS1 can also be made of a metal (such as silver (Ag), aluminum (Al), etc.) that has light-shielding properties for the fluorescence L2 and high reflectivity of the fluorescence L2. In this case, the fluorescence L2 that propagates in the light guide layer 51 and reaches the light-shielding film LS1 is reflected by the light-shielding film LS1. When the reflected light propagates again in the light guide layer 51, a portion of it illuminates the light-receiving element 31, thereby expecting an increase in detection intensity.

[0097] (Third Implementation) Figure 11 This is a top view of the fluorescence detection device according to the third embodiment. Figure 12 yes Figure 11 A schematic cross-sectional view of section XII-XII′. Furthermore, in the following description, the same reference numerals are used for the same constituent elements as those described in the above embodiments, and repeated descriptions are omitted.

[0098] Figure 12 The fluorescence detection device 1B shown includes a substrate 21, a circuit forming layer 70, an insulating film 27, and a detection unit 50. For example... Figure 11 As shown, the shape of the light-receiving element 31 is hexagonal when viewed from above.

[0099] Figure 11 and Figure 12 The light-receiving element 31 shown has two sides along the second direction Dy. One side is positioned to overlap with the signal line SL when viewed from above. The other side is positioned not to overlap with the signal line SL when viewed from above.

[0100] When viewed from above, the signal line SL extends in a curved manner, crossing between adjacent light-receiving elements 31 in the second direction Dy.

[0101] Here, if the signal line SL is arranged between adjacent light-receiving elements 31 in the same manner as in the first embodiment, the bending angle of the signal line SL becomes larger and the length of the signal line SL becomes longer. However, in the third embodiment, by arranging the signal line SL to overlap with the light-receiving element 31 when viewed from above, the bending angle of the signal line SL becomes smaller and the length of the signal line SL becomes shorter, thus suppressing adverse conditions such as signal delay.

[0102] Furthermore, as a result, compared with the fluorescence detection device 1 of the first embodiment, the area of ​​the light-receiving element located at a distance equal to that of the receiving portion 300 is increased, thereby improving the fluorescence detection accuracy of the sample in each receiving portion 300 of the light-receiving element 31.

[0103] (Fourth Implementation) Figure 13 This is a top view of the fluorescence detection device according to the fourth embodiment. Figure 14 yes Figure 13 A schematic cross-sectional view of section XIV-XIV′. Furthermore, in the following description, the same reference numerals are used for components that are the same as those described in the above embodiments, and repeated descriptions are omitted.

[0104] The fluorescence detection device 1C includes a substrate 21, a circuit forming layer 70, an insulating film 27, a detection section 50, and a partition 80 disposed on the detection section 50.

[0105] The partition 80 is configured to surround multiple light-receiving elements 31 when viewed from above. The partition 80 is disposed on the light-suppressing layer 69. The partition 80 is formed, for example, of acrylic resin. The enclosed area 800, which is surrounded by multiple receiving portions 300, multiple openings 67a, 68a and the partition 80, is filled with the specimen.

[0106] The sample 54 is housed inside the housing 300. Additionally, the sample 54 is housed on the light suppression layer 69 within the enclosing region 800.

[0107] Therefore, the amount of sample 54 can be increased, thereby increasing the absolute value of fluorescence intensity.

[0108] In the enclosed region 800, the fluorescence L2 emitted by the sample 54 due to the excitation light L1 is either totally reflected at the interface between the air and the sample, or directly incident on the light-receiving element 31.

[0109] As a result, the absolute intensity of fluorescence increases, thus the SNR (Signal to Noise Ratio) becomes higher, which enables the improvement of fluorescence detection accuracy of the sample in each housing portion 300 of the light-receiving element 31.

[0110] The preferred embodiments of the present invention have been described above, but the present invention is not limited to such embodiments. The content disclosed in the embodiments is merely an example, and various modifications can be made without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention are of course also within the technical scope of the present invention. Without departing from the spirit of the above-described embodiments and variations, at least one of various omissions, substitutions, and modifications of the constituent elements can be made.

[0111] Explanation of reference numerals in the attached figures 1, 1a, 1b, 1A, 1B, 1C Fluorescence Detection Devices 10. Sensor Department 21 substrate 31 Light-receiving element 50 Testing Department 51 Light guide layer 53 Through Hole 54 Samples 60 light source 67. Light-shielding layer 68 Reflective layer 69 Light suppression layer 67a, 68a openings 80 Dike Containment Department 300 513 Sidewall 511 First Page 512 Second page GL gate line LS1 light-blocking film SL signal line Tr drives the transistor.

Claims

1. A fluorescence detection device, comprising: substrate; The light source illuminates the sample with excitation light; and The testing department detects fluorescence. The detection unit includes: a light-transmitting layer having a first surface and a second surface opposite to the first surface; a through-hole penetrating the light-guide layer from the first surface to the second surface in a direction perpendicular to the substrate; a light-receiving element covered by the light-guide layer for receiving fluorescence emitted by the sample due to the excitation light; and a light-suppressing layer disposed on the light-guide layer for suppressing the transmission of the excitation light. The light suppression layer has multiple openings. The fluorescence detection device is provided with multiple receiving sections, which are surrounded by the sidewalls of the through hole and are used to receive the sample. The opening is positioned to overlap with the receiving portion. The light-receiving element is arranged to surround the receiving portion when viewed from above.

2. The fluorescence detection device as described in claim 1, wherein, The light suppression layer includes a light-shielding layer with light-shielding properties and a light-reflecting layer.

3. The fluorescence detection device as described in claim 1, wherein, The light-suppressing layer includes a light-shielding layer with light-shielding properties.

4. The fluorescence detection device as described in claim 1, wherein, The light suppression layer includes a reflective layer that reflects light.

5. The fluorescence detection device as described in claim 2, wherein, It has a driving transistor for controlling the light-receiving element. The driving transistor is disposed on the substrate.

6. The fluorescence detection device as described in claim 5, wherein, The receiving portion is surrounded by adjacent gate lines and adjacent signal lines. The detection unit has a light-shielding film disposed between adjacent light-receiving elements within the light guide layer. The light-shielding film is positioned to overlap with the gate line and the signal line when viewed from above.

7. The fluorescence detection device as described in claim 2 or 6, wherein, The light-receiving element is hexagonal when viewed from above.

8. The fluorescence detection device as described in claim 2 or 5, wherein, It has a dike installed above the detection unit. The dam is configured to surround multiple light-receiving elements when viewed from above.

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