Perovskite component and method of manufacturing the same

Abstract

This invention provides a perovskite module and its preparation method, comprising the following steps: scribing a conductive substrate with a P1 line; sequentially depositing a hole transport layer, a perovskite absorber layer, and a first electron transport layer on the conductive substrate after the P1 scribing; then scribe a P2 isolation line along the same side as the P1 scribing line, cutting the perovskite absorber layer and the first electron transport layer; depositing a second electron transport layer; then scribe a P2 contact conduction line along the same side as the P2 isolation line, cutting the second electron transport layer, the first electron transport layer, and the perovskite absorber layer; depositing an electrode layer; then scribe a P3 line along the same side as the P2 contact conduction line, penetrating the electrode layer, the second electron transport layer, the first electron transport layer, and at least part of the perovskite absorber layer, to obtain the perovskite module. This invention improves the stability of the battery, avoids direct contact between environmental moisture and the perovskite during the scribing process, and improves the module efficiency.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to a perovskite module and its preparation method. Background Technology

[0002] In recent years, perovskite has been enthusiastically sought after by industry and research institutions as a photovoltaic technology with the potential to improve efficiency and reduce costs. However, defects at the interfaces between the perovskite and various components can easily lead to a decrease in the photoelectric conversion power of the module under the influence of light, heat, and moisture. To address this, a passivation layer has been introduced to significantly eliminate defects between the perovskite layer and the electrode layer, thereby improving efficiency and stability. However, due to the P1P2P3 connection method, contact between the perovskite layer and the electrode layer between sub-cells is unavoidable. Traditionally, after the perovskite absorber layer is fabricated, a P2 line is drawn. Although the time is short, there is still the problem that direct contact with moisture affects the efficiency of the moisture-sensitive perovskite layer.

[0003] Therefore, there is an urgent need to provide a process to avoid direct contact between ambient moisture and perovskite during laser scribing, thereby improving module efficiency and stability. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a perovskite module and its fabrication method. The present invention divides the P2 scribing into P2 isolation scribing for isolation and passivation and P2 contact conduction scribing for connection, thereby avoiding direct contact between the perovskite cross-section and the electrode between the two sub-cells in traditional fabrication methods. This eliminates interfaces with numerous defects and improves cell stability. Simultaneously, the P2 isolation scribing is positioned between the first and second electron transport layers, effectively preventing direct contact between ambient moisture and the perovskite during scribing, significantly improving module efficiency and stability.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] In a first aspect, the present invention provides a method for preparing a perovskite component, the method comprising the following steps:

[0007] Scribing line P1 on the conductive substrate.

[0008] A hole transport layer, a perovskite absorption layer, and a first electron transport layer are sequentially deposited on the conductive substrate after the P1 line is drawn.

[0009] On the first electron transport layer, an isolation line P2 is drawn along the same direction as the line P1, cutting the perovskite absorption layer and the first electron transport layer.

[0010] A second electron transport layer is deposited, and P2 contact conduction lines are made along the same side as the P2 isolation lines to cut the second electron transport layer.

[0011] An electrode layer is deposited on the second electron transport layer.

[0012] On the electrode layer, a line P3 is drawn along the same direction as the P2 contact conduction line, penetrating the electrode layer, the second electron transport layer, the first electron transport layer, and at least part of the perovskite absorption layer to obtain the perovskite assembly.

[0013] This invention divides the P2 scribing into P2 isolation scribing (referred to as P2-ISO scribing) for isolation and passivation and P2 contact conduction scribing (referred to as P2-CON scribing) for connection. This avoids direct contact between the perovskite cross-section and the electrode between the two sub-cells in traditional manufacturing methods, eliminating interfaces with numerous defects and thus improving cell stability. At the same time, the P2-ISO scribing is located between the first electron transport layer and the second electron transport layer, which can effectively prevent environmental moisture from directly contacting the perovskite during the scribing process, significantly improving module efficiency and stability.

[0014] In this invention, P2-ISO scribing is performed after the deposition of the perovskite absorber layer and the first electron transport layer. The first electron transport layer has already covered and protected the perovskite layer, which avoids the problem of device humidity stability degradation caused by directly performing P2 scribing after the deposition of the traditional perovskite absorber layer.

[0015] In this invention, the purpose of setting the second electron transport layer is to transport electrons, while also preventing harmful substances such as oxygen and moisture in the air from penetrating into the battery, thus playing a buffering role. Therefore, it can also be called a buffer layer.

[0016] It should be noted that the P2 isolation line is drawn along the same side as the P1 line. "Same side" means that the P2 isolation line and the P1 isolation line are parallel on their projection onto the same plane. If the P1 line is along the length of the conductive glass, then the P2 isolation line is also drawn in the same direction. Other meanings of "same side" are the same. The specific drawing positions are shown in the attached figure. Figure 2 To be continued Figure 7 As shown.

[0017] Preferably, the conductive substrate is conductive glass.

[0018] Preferably, the conductive substrate comprises a stacked glass layer and a transparent electrode, and P1 scribing cuts the transparent electrode.

[0019] Preferably, the transparent electrode comprises an ITO (indium tin oxide) layer or an FTO (fluorine-doped tin oxide) layer.

[0020] Preferably, the P1 line is drawn by laser scribing; the laser power of the laser scribing is 9-11W, for example, 9W, 10W or 11W, etc., the laser frequency is 100-500KHz, for example, 100KHz, 200KHz, 300KHz, 400KHz or 500KHz, etc., and the scribing speed is 100-500mm / s, for example, 100mm / s, 200mm / s, 300mm / s, 400mm / s or 500mm / s, etc.

[0021] Preferably, the line width of the P1 line is 15-20μm, for example, it can be 15μm, 16μm, 17μm, 18μm, 19μm or 20μm, and the depth is 170-450nm, for example, it can be 170nm, 200nm, 250nm, 300nm, 350nm, 400nm or 450nm, etc.

[0022] Preferably, the length of the P1 scribe line exceeds the length of the parallel edge on the same side of the conductive glass, and the excess range is 1-5mm, for example, it can be 1mm, 2mm, 3mm, 4mm or 5mm, etc.

[0023] Preferably, when the transparent electrode is an ITO layer, the depth of the P1 line is 170-200 nm.

[0024] Preferably, when the transparent electrode is an FTO layer, the depth of the P1 scribing is 400-450 nm.

[0025] Preferably, the material of the hole transport layer comprises nickel oxide and / or a single-molecule self-assembled material. Exemplary examples include 2-(9H-carbazole-9-yl)-4,6-bis(4-methoxyphenyl)-1,3,5-triazine (MeO-2PACz), 4-(9H-carbazole-9-yl)-2,6-bis(4-methylphenyl)-1,3,5-triazine (Me-4PACz), or [4-(7H-dibenzocarbazole-7-yl)butyl]phosphoric acid (4PADCBz), etc.

[0026] Preferably, the hole transport layer is prepared by spin coating or blade coating.

[0027] Preferably, the thickness of the perovskite absorber layer is 600-800 nm, for example, it can be 600 nm, 700 nm or 800 nm.

[0028] Preferably, the chemical formula of the perovskite absorber layer is ABX3, wherein A includes any one or a combination of at least two of formamidinium ions, methylamine ions and cesium ions, B includes lead ions and / or tin ions, and X is a halide ion.

[0029] Preferably, the preparation method of the perovskite absorber layer includes spin coating or blade coating. In the spin coating method, the spin coating rate is 3000-4000 rpm, for example, 3000 rpm, 3500 rpm or 4000 rpm, etc., the spin coating time is 25-40 s, for example, 25 s, 30 s, 35 s or 40 s, etc., the annealing temperature after spin coating is 100-110℃, for example, 100℃, 105℃ or 110℃, etc., the annealing time is 25-35 min, for example, 25 min, 30 min or 35 min, etc.

[0030] Preferably, the first electron transport layer includes C 60 layer.

[0031] Preferably, the thickness of the first electron transport layer is 15-30 nm, for example, it can be 15 nm, 20 nm, 25 nm or 30 nm.

[0032] Preferably, the first electron transport layer is deposited by thermal evaporation; the evaporation rate of the thermal evaporation method is 0.008-0.02 nm / s, for example, it can be 0.008 nm / s, 0.01 nm / s, 0.015 nm / s or 0.02 nm / s, etc.

[0033] Preferably, a passivation layer is also deposited between the perovskite absorber layer and the first electron transport layer.

[0034] Preferably, the material of the passivation layer includes any one or a combination of at least two of phenylethyl ammonium iodide (PEAI), polyimide (PI), and 1,3-propane diammonium iodide (PIDAI).

[0035] Preferably, the thickness of the passivation layer is 5-15 nm, for example, it can be 5 nm, 10 nm or 15 nm.

[0036] In this invention, a passivation layer of suitable thickness helps to prevent ions from migrating between the electrode and the perovskite.

[0037] Preferably, the passivation layer is deposited using a spin coating method or a blade coating method.

[0038] Preferably, the interval between the P2 isolation line and the P1 line is 30-50μm, for example, it can be 30μm, 35μm, 40μm, 45μm or 50μm.

[0039] Preferably, the P2 isolation scribing is performed using laser overlay scribing; the specific parameters of the laser overlay scribing include:

[0040] The laser power is 7-9W, for example, 9W, 10W or 11W, etc.; the laser frequency is 250-500KHz, for example, 250KHz, 300KHz, 350KHz, 400KHz or 500KHz, etc.; and the scribing speed is 300-500mm / s, for example, 300mm / s, 350mm / s, 400mm / s, 450mm / s or 500mm / s, etc.

[0041] Preferably, the P2 isolation lines include 3-7 parallel lines, such as 3, 4, 5, 6 or 7 lines; wherein the line spacing between the parallel lines is 8-15μm, such as 8μm, 9μm, 10μm, 11μm, 12μm, 13μm, 14μm or 15μm.

[0042] In this invention, using 3-7 parallel scribing lines helps to achieve the required scribing width.

[0043] In this invention, since both the P1 isolation scribe line and the P2 contact conductive scribe line are composed of several parallel lines, the line spacing between the parallel scribe lines is limited to 8-15 μm, which allows the scribe lines to overlap. This helps to ensure that there are no residues of the first electron transport layer and perovskite layer within the width of the P2 isolation scribe line, and ensures that there are no residues of the second electron transport layer within the range of the P2 contact conductive scribe line, thus helping to improve battery efficiency.

[0044] Preferably, the line width of the P2 isolation line is 50-65nm, for example, it can be 50nm, 55nm, 60nm or 65nm, etc.

[0045] In this invention, a P2 isolation scribe line of suitable width helps to ensure low current transmission resistance.

[0046] It should be noted that the line width of the P2 isolation line refers to the overall width of the P2 isolation line.

[0047] Preferably, the material of the second electron transport layer includes copper bath (BCP) or ytterbium oxide.

[0048] Preferably, the thickness of the second electron transport layer is 7-10 nm, for example, it can be 7 nm, 8 nm, 9 nm or 10 nm.

[0049] Preferably, the second electron transport layer is deposited by thermal evaporation; the evaporation rate of the thermal evaporation method is 0.005-0.1 nm / s, for example, it can be 0.005 nm / s, 0.01 nm / s, 0.05 nm / s or 0.1 nm / s, etc.

[0050] Preferably, the P2 contact conduction lines are scribing using a laser overlay scribing method; the specific parameters of the laser overlay scribing include:

[0051] The laser power is 7-9W, for example, 7W, 8W or 9W, etc.; the laser frequency is 250-500KHz, for example, 250KHz, 300KHz, 350KHz, 400KHz or 500KHz, etc.; and the scribing speed is 300-500mm / s, for example, 300mm / s, 350mm / s, 400mm / s, 450mm / s or 500mm / s, etc.

[0052] Preferably, the area of ​​the P2 contact conduction marking overlaps with the area of ​​the P2 isolation marking.

[0053] Preferably, in the P2 contact conductive scribing, the line spacing between parallel scribings is 8-15μm, for example, it can be 8μm, 9μm, 10μm, 11μm, 12μm, 13μm, 14μm or 15μm, etc.

[0054] In this invention, the spacing between parallel scribing lines is limited to 8-15 μm to ensure overlap between the scribing lines and to thoroughly remove the second electron transport layer at the bottom of the scribing groove.

[0055] Preferably, the center position of the P2 contact conduction line coincides with the center position of the P2 isolation line.

[0056] Preferably, when the P2 isolation scribing includes 3-7 parallel scribings, the number of parallel scribings in the P2 contact conduction scribing is 1-3 fewer than the number of parallel scribings in the P2 isolation scribing, for example, 1, 2 or 3.

[0057] In this invention, the number of parallel lines in the P2 contact conduction scribing is limited to 1-3 fewer than the number of parallel lines in the P2 isolation scribing. The purpose of this is to avoid damaging the second electron transport layer and passivation layer on the perovskite sidewall when performing the P2 contact conduction scribing.

[0058] Preferably, the thickness of the electrode layer is 100-150nm, for example, it can be 100nm, 110nm, 120nm, 130nm, 140nm or 150nm.

[0059] Preferably, the electrode layer is made of silver or copper.

[0060] Preferably, the P3 scribe line is located on the side of the P2 contact conduction scribe line that is away from the P1 scribe line.

[0061] It should be noted that the side furthest from the P1 scribe line refers to the P2 contact conduction scribe line distributed between the P3 scribe line and the P1 scribe line, as shown in the attached figure. Figure 7 As shown.

[0062] Preferably, the P3 line is scribing using laser overlay scribing; the specific parameters of the laser overlay scribing include:

[0063] The laser power is 7-9W, for example, 7W, 8W or 9W, the laser frequency is 250-500KHz, for example, 250KHz, 300KHz, 350KHz, 400KHz or 500KHz, and the scribing speed is 100-300mm / s, for example, 100mm / s, 150mm / s, 200mm / s, 250mm / s or 300mm / s.

[0064] Preferably, the P3 scribe line includes 4-10 parallel scribe lines, such as 4, 6, 8 or 10, and the line spacing between the parallel scribe lines is 4-8 μm, such as 4 μm, 5 μm, 6 μm, 7 μm or 8 μm.

[0065] Preferably, the distance between the center of the P3 scribe line and the center of the P2 contact conduction scribe line is 40-60 μm, for example, it can be 40 μm, 50 μm or 60 μm.

[0066] Preferably, the preparation method includes the following steps:

[0067] (a) A conductive glass is provided, and a P1 line is scribed on the conductive glass using laser scribing. The laser power for scribing is 9-11W, the laser frequency is 100-500KHz, and the scribing speed is 100-500mm / s. The conductive glass includes stacked glass layers and transparent electrodes, and the P1 line cuts the transparent electrodes. The width of the P1 line is 15-20μm, and the depth is 170-450nm. The length of the P1 line exceeds the length of the parallel edge on the same side of the conductive glass, and the excess range is 1-5mm.

[0068] (b) The conductive glass after P1 scribing is cleaned, and then a hole transport layer, a perovskite absorber layer, and a first electron transport layer are sequentially deposited on the surface of the conductive glass after P1 scribing. Then, a P2 isolation scribing is performed along the same side as the P1 scribing using laser overlay scribing, cutting the perovskite absorber layer, passivation layer, and first electron transport layer. The interval between the P2 isolation scribing and the P1 scribing is 30-50 μm, the laser power for scribing is 7-9 W, the laser frequency is 250-500 kHz, and the scribing speed is 300-500 mm / s. The hole transport layer is made of nickel oxide and / or a single-molecule self-assembled material; the passivation layer is made of any one or a combination of at least two of phenylethyl ammonium iodide, polyimide, and phenyl dimethyl ammonium iodide; the passivation layer has a thickness of 5-15 nm; the perovskite absorber layer has a thickness of 600-800 nm; and the first electron transport layer includes C… 60 The first electron transport layer has a thickness of 15-30 nm; the P2 isolation scribe line includes 3-7 parallel scribe lines with a line spacing of 8-15 μm between the parallel scribe lines; the width of the P2 isolation scribe line is 45-90 μm.

[0069] (c) A second electron transport layer is deposited on the first electron transport layer with P2 isolation scribing. P2 contact conduction scribing is performed along the same side as the P2 isolation scribing using laser overlay scribing to cut the second electron transport layer. The scribing laser power is 7-9W, the laser frequency is 250-500KHz, and the scribing speed is 300-500mm / s. The material of the second electron transport layer includes copper bath or ytterbium oxide, and the thickness of the second electron transport layer is 7-10nm. The number of parallel scribings in the P2 contact conduction scribing is 1-3 fewer than the number of parallel scribings in the P2 isolation scribing. The line spacing between the parallel scribings in the P2 contact conduction scribing is 8-15μm, and the center position of the P2 contact conduction scribing is consistent with the center position of the P2 isolation scribing.

[0070] (d) An electrode layer with a thickness of 100-150 nm is deposited on a second electron transport layer having a P2 contact conduction scribe line. A P3 scribe line is then etched along the same side as the P2 contact conduction scribe line using a laser overlay scribe method. The P3 scribe line is located on the side of the P2 contact conduction scribe line away from the P1 scribe line and penetrates the electrode layer, the second electron transport layer, the first electron transport layer, the passivation layer, and at least part of the perovskite absorption layer. The laser power for scribe line is 7-9 W, the laser frequency is 250-500 kHz, and the scribe line speed is 100-300 mm / s. The P3 scribe line includes 4-10 parallel scribe lines with a line spacing of 4-8 μm between them. The distance between the center of the P3 scribe line and the center of the P2 contact conduction scribe line is 40-60 μm.

[0071] (e) The components processed in step (d) are cleaned to obtain the perovskite components.

[0072] It should be noted that the cleaned area is the area 7-15mm away from the edge of the component (e.g., 7mm, 10mm, 12mm or 15mm, etc.).

[0073] In a second aspect, the present invention provides a perovskite component, which is prepared by the preparation method described in the first aspect.

[0074] The numerical range described in this invention includes not only the point values ​​listed above, but also any point values ​​within the numerical ranges not listed above. Due to space limitations and for the sake of brevity, this invention will not exhaustively list all the specific point values ​​included in the range.

[0075] Compared with the prior art, the present invention has the following beneficial effects:

[0076] This invention divides the P2 scribing into P2 isolation scribing for passivation and P2 contact conduction scribing for connection, thereby avoiding direct contact between the perovskite cross-section and the electrode between the two sub-cells in traditional manufacturing methods, eliminating interfaces with numerous defects, and thus improving cell stability. At the same time, the P2 isolation scribing is set between the first electron transport layer and the second electron transport layer, which can effectively prevent environmental moisture from directly contacting the perovskite during the scribing process, significantly improving module efficiency and stability. Attached Figure Description

[0077] Figure 1 This is a process flow diagram of the perovskite component fabrication provided in Example 1 of the present invention.

[0078] Figure 2 This is a schematic diagram of the perovskite component structure after step (2) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0079] Figure 3 This is a schematic diagram of the perovskite component structure after step (4) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0080] Figure 4 This is a schematic diagram of the perovskite component structure after step (5) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0081] Figure 5 This is a schematic diagram of the perovskite component structure after step (6) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0082] Figure 6This is a schematic diagram of the perovskite component structure after step (7) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0083] Figure 7 This is a schematic diagram of the perovskite component structure after step (9) of the fabrication process of the perovskite component provided in Embodiment 1 of the present invention.

[0084] Wherein, 1-glass layer; 2-FTO layer; 3-hole transport layer; 4-perovskite absorber layer; 5-passivation layer; 6-first electron transport layer; 7-second electron transport layer; 8-electrode layer. Detailed Implementation

[0085] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0086] Example 1

[0087] This embodiment provides a method for preparing a perovskite component, and its preparation process flow diagram is shown below. Figure 1 As shown, the preparation method includes the following steps:

[0088] (1) Provide a conductive substrate with a side length of 5cm. First, clean the conductive substrate with a cleaning solution at 40°C, and then clean it with deionized water to remove dirt from the surface of the conductive substrate.

[0089] (2) A number of P1 lines were made on the conductive substrate using green picosecond laser scribing to cut it into several sub-cells; the laser power of scribing was 9.5W, the laser frequency was 250KHz, and the scribing speed was 300mm / s; the conductive substrate was conductive glass, which included a stacked glass layer and a transparent electrode (FTO) layer with a thickness of 350nm, and the FTO layer was cut by P1 scribing; the width of the P1 scribing was 15μm and the depth was 438nm; two reference points were set on the outer side of the P1 scribing; the line spacing between the P1 scribings was 6mm; the resistance of the P1 scribing perpendicular to its length direction was greater than 200MΩ; Figure 2 A schematic diagram of the component structure after this step is completed is shown.

[0090] (3) Clean the conductive substrate after several P1 lines are drawn, i.e., first use cleaning solution, then rinse with deionized water, and then dry at 80°C.

[0091] (4) Deposition of hole transport layer, perovskite absorption layer, passivation layer and first electron transport layer:

[0092] A 0.5 g / L 4PADCBz solution was spin-coated onto a conductive substrate and then annealed at 100 °C for 10 min to form a hole transport layer. The spin-coating rate was 3000 rpm and the spin time was 30 s.

[0093] A perovskite absorber layer with a thickness of 800 nm was spin-coated onto the hole transport layer using a spin-coating method. Its chemical formula is FA. 0.92 MA 0.03 Cs 0.05 The specific parameters for PbI3 spin coating include: spin coating rate of 4000 rpm, spin coating time of 30 s, annealing temperature of 100 ℃, and annealing time of 30 min.

[0094] A passivation layer of PI material with a thickness of 10 nm was spin-coated onto the perovskite absorber layer using a spin-coating method. The spin-coating rate was 3000 rpm, the spin-coating time was 30 s, the annealing temperature was 100℃, and the annealing time was 5 min.

[0095] A 20 nm thick C layer was thermally deposited on the passivation layer at a deposition rate of 0.01 nm / s. 60 The layer serves as the first electron transport layer.

[0096] Figure 3 A schematic diagram of the component structure after this step is completed is shown.

[0097] (5) P2 isolation scribing is performed along the same side as P1 scribing using a green picosecond laser to cut the perovskite absorption layer and the first electron transport layer; in the same sub-cell, the interval between P2 isolation scribing and P1 scribing is 50 μm; the laser power for scribing is 7.5 W, the laser frequency is 500 kHz, and the scribing speed is 500 mm / s; P2 isolation scribing includes 5 parallel scribings with a line spacing of 10 μm between them; the line width of P2 isolation scribing is 60 μm and the depth is 350 nm.

[0098] Figure 4 A schematic diagram of the component structure after this step is completed is shown.

[0099] (6) Deposition of the second electron transport layer:

[0100] A copper bath layer (BCP layer) with a thickness of 8 nm was deposited on the first electron transport layer using a thermal evaporation method at an evaporation rate of 0.05 nm / s as the second electron transport layer.

[0101] Figure 5 A schematic diagram of the component structure after this step is completed is shown.

[0102] (7) The P2 contact conduction line is etched along the same side as the P2 isolation line using a green picosecond laser to cut the second electron transport layer. The laser power is 7.5W, the laser frequency is 500KHz, and the etch speed is 500mm / s. The number of parallel lines in the P2 contact conduction line is 2 fewer than the number of parallel lines in the P2 isolation line. The line spacing between the parallel lines in the P2 contact conduction line is 10μm. The center position of the P2 contact conduction line is the same as the center position of the P2 isolation line.

[0103] Figure 6 A schematic diagram of the component structure after this step is completed is shown.

[0104] (8) Electrode layer deposition: A 100nm thick electrode layer is deposited on the passivation layer by vapor deposition using the vapor deposition method. The material is silver.

[0105] The P3 scribing was performed using a green picosecond laser along the same side as the P2 contact conduction scribing. The P3 scribing was located on the side of the P2 contact conduction scribing away from the P1 scribing and penetrated the electrode layer, the second electron transport layer, the first electron transport layer, the passivation layer, and the perovskite absorption layer. The laser power for scribing was 8W, the laser frequency was 500KHz, and the scribing speed was 150mm / s. The P3 scribing consisted of 5 parallel scribings with a line spacing of 5μm. The distance between the center of the P3 scribing and the center of the P2 contact conduction scribing was 50μm.

[0106] Figure 7 A schematic diagram of the component structure after this step is completed is shown.

[0107] (9) Use an infrared galvanometer to clean the edge of the component after step (4). The cleaned area is set to be 8 mm away from the edge of the component to obtain the perovskite component.

[0108] Example 2

[0109] The difference between this embodiment and Embodiment 1 is that the P2 isolation scribing includes 3 parallel scribings with a line spacing of 15μm between the parallel scribings and a width of 50μm for the P2 isolation scribings; the P3 scribings penetrate the electrode layer, the second electron transport layer, the first electron transport layer, the passivation layer, and part of the perovskite absorption layer.

[0110] The remaining preparation methods and parameters are consistent with those in Example 1.

[0111] Example 3

[0112] The difference between this embodiment and Embodiment 1 is that the P2 isolation line includes 7 parallel lines, the line spacing between the parallel lines is 8μm, and the width of the P2 isolation line is 68μm.

[0113] The remaining preparation methods and parameters are consistent with those in Example 1.

[0114] Example 4

[0115] The difference between this embodiment and Embodiment 1 is that in the P2 contact conduction scribe line, the spacing between parallel scribe lines is 8μm.

[0116] The remaining preparation methods and parameters are consistent with those in Example 1.

[0117] Example 5

[0118] The difference between this embodiment and Embodiment 1 is that in the P2 contact conduction scribe line, the spacing between parallel scribe lines is 15μm.

[0119] The remaining preparation methods and parameters are consistent with those in Example 1.

[0120] Example 6

[0121] The difference between this embodiment and Embodiment 1 is that no passivation layer is deposited.

[0122] The remaining preparation methods and parameters are consistent with those in Example 1.

[0123] Example 7

[0124] The difference between this embodiment and embodiment 1 is that the number of parallel lines in the P2 contact conduction scribe line is the same as the number of parallel lines in the P2 isolation scribe line, which is 5.

[0125] The remaining preparation methods and parameters are consistent with those in Example 1.

[0126] Example 8

[0127] The difference between this embodiment and Embodiment 1 is that the P3 scribing line is a scribing line with a width of 16μm.

[0128] The remaining preparation methods and parameters are consistent with those in Example 1.

[0129] Comparative Example 1

[0130] The difference between this comparative example and Example 1 is that a second electron transport layer is not provided, and P2 contact conduction marking is not performed.

[0131] The remaining preparation methods and parameters are consistent with those in Example 1.

[0132] Performance testing

[0133] Efficiency and humidity stability tests were conducted on the perovskite modules provided in the above embodiments and comparative examples. The efficiency test conditions were: AM1.5G (standard solar spectrum 1.5G), 1 day of sunlight; the humidity stability test conditions were: stored for 15 days in an environment with a temperature of 27-30°C and a humidity of 30-33%.

[0134] The test results are shown in Table 1.

[0135] Table 1

[0136]

[0137] analyze:

[0138] As shown in the table above, this invention divides the P2 scribing into P2 isolation scribing for passivation and P2 contact conduction scribing for connection, thereby avoiding direct contact between the perovskite cross-section and the electrode between the two sub-cells in the traditional manufacturing method, eliminating the interface with a large number of defects, and thus improving the stability of the cell. At the same time, the P2 isolation scribing is set between the first electron transport layer and the second electron transport layer, which can effectively prevent the ambient moisture from directly contacting the perovskite during the scribing process, significantly improving the efficiency and stability of the module.

[0139] As can be seen from Examples 1 and 6, if a passivation layer is not deposited, the battery efficiency is low and the humidity stability is significantly reduced.

[0140] As can be seen from Examples 1 and 7, if the number of parallel lines in the P2 contact conduction scribe line is the same as the number of parallel lines in the P2 isolation scribe line, the humidity stability of the battery will decrease significantly.

[0141] As can be seen from Examples 1 and 8, if the P3 scribing is a scribing line with a width of 16μm, then compared with the overlapping line, not only is the initial efficiency low, but the humidity stability is also significantly reduced.

[0142] As can be seen from Example 1 and Comparative Example 1, if a second electron transport layer is not provided and P2 contact conduction lines are not performed, the initial efficiency of the battery is extremely low and the humidity stability drops sharply.

[0143] The applicant declares that the present invention is illustrated by the above embodiments, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials used in the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing a perovskite component, characterized in that, The preparation method includes: Scribing line P1 onto the conductive substrate; A hole transport layer, a perovskite absorption layer, and a first electron transport layer are sequentially deposited on the conductive substrate after the P1 line is drawn. On the first electron transport layer, a P2 isolation line is made along the same direction as the P1 line to cut the perovskite absorption layer and the first electron transport layer. Deposit a second electron transport layer, perform P2 contact conduction scribing along the same direction as the P2 isolation scribing, and cut the second electron transport layer; An electrode layer is deposited on the second electron transport layer; On the electrode layer, a line P3 is drawn along the same direction as the P2 contact conduction line, penetrating the electrode layer, the second electron transport layer, the first electron transport layer, and at least part of the perovskite absorption layer to obtain the perovskite assembly.

2. The preparation method according to claim 1, characterized in that, The conductive substrate includes a stacked glass layer and a transparent electrode, and P1 scribing cuts the transparent electrode; And / or, the P1 line is scribing by laser scribing; the laser power of the laser scribing is 9-11W, the laser frequency is 100-500KHz, and the scribing speed is 100-500mm / s; And / or, the line width of the P1 scribe line is 15-20 μm and the depth is 170-450 nm; And / or, the length of the P1 scribe line exceeds the length of the parallel side of the conductive substrate on the same side, and the excess ranges from 1 to 5 mm.

3. The preparation method according to claim 1, characterized in that, The hole transport layer is made of nickel oxide and / or monomolecular self-assembled materials. And / or, the thickness of the perovskite absorber layer is 600-800 nm; And / or, the first electron transport layer includes C 60 layer; And / or, the thickness of the first electron transport layer is 15-30 nm; And / or, the first electron transport layer is deposited using a thermal evaporation method; the evaporation rate of the thermal evaporation method is 0.008-0.02 nm / s; And / or, a passivation layer is also deposited between the perovskite absorber layer and the first electron transport layer; And / or, the material of the passivation layer includes any one or a combination of at least two of phenylethyl ammonium iodide, polyimide and 1,3-propane diammonium iodide; And / or, the thickness of the passivation layer is 5-15 nm.

4. The preparation method according to claim 1, characterized in that, The interval between the P2 isolation line and the P1 line is 30-50 μm; And / or, the P2 isolation scribing is performed using laser overlay scribing; the specific parameters of the laser overlay scribing include: The laser power is 7-9W, the laser frequency is 250-500KHz, and the scribing speed is 300-500mm / s.

5. The preparation method according to claim 1, characterized in that, The P2 isolation lines include 3-7 parallel lines; wherein the spacing between the parallel lines is 8-15 μm. And / or, the line width of the P2 isolation line is 45-90μm.

6. The preparation method according to claim 1, characterized in that, The material of the second electron transport layer includes copper bath or ytterbium oxide; And / or, the thickness of the second electron transport layer is 7-10 nm; And / or, the second electron transport layer is deposited using a thermal evaporation method; the evaporation rate of the thermal evaporation method is 0.005-0.1 nm / s.

7. The preparation method according to claim 1, characterized in that, The P2 contact conduction lines are scribing using a laser overlay scribing method; the specific parameters of the laser overlay scribing include: The laser power is 7-9W, the laser frequency is 250-500KHz, and the scribing speed is 300-500mm / s; And / or, the area of ​​the P2 contact conduction scribe overlaps with the area of ​​the P2 isolation scribe; And / or, in the P2 contact conduction scribe line, the line spacing between parallel scribe lines is 8-15 μm; And / or, the center position of the P2 contact conduction scribe line is consistent with the center position of the P2 isolation scribe line.

8. The preparation method according to claim 5, characterized in that, When the P2 isolation scribing includes 3-7 parallel scribings, the number of parallel scribings in the P2 contact conduction scribing is 1-3 fewer than the number of parallel scribings in the P2 isolation scribing.

9. The preparation method according to claim 1, characterized in that, The P3 line is located on the side of the P2 contact conduction line that is away from the P1 line. And / or, the P3 line is scribing is performed using laser overlay scribing; the specific parameters of the laser overlay scribing include: The laser power is 7-9W, the laser frequency is 250-500KHz, and the scribing speed is 100-300mm / s; And / or, the P3 scribe line comprises 4-10 parallel scribe lines, with a line spacing of 4-8 μm between the parallel scribe lines; And / or, the distance between the center of the P3 scribe line and the center of the P2 contact conduction scribe line is 40-60 μm.

10. A perovskite component, characterized in that, The perovskite component is prepared using the preparation method described in any one of claims 1-9.

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