Method, device, equipment, medium and product for junction temperature early warning of IGCT

Abstract

The application discloses a junction temperature early warning method, device, equipment, medium and product of an IGCT. The method comprises the following steps: when the IGCT performs an off action or within a preset time after the off action is performed, a first reverse voltage pulse is applied to a gate cathode path of the IGCT, and a first gate cathode current generated after the gate cathode path is excited by the first reverse voltage pulse is collected; feature extraction is performed on the first gate cathode current to obtain a current peak value, a current platform mean value and a current integral charge; the current peak value, the current platform mean value and the current integral charge are input into a preset junction temperature conversion model to map an estimated junction temperature value corresponding to the IGCT; and a junction temperature early warning result is generated based on the estimated junction temperature value and a preset junction temperature early warning rule. The application can improve the accuracy of IGCT junction temperature early warning.

Description

Technical Field

[0001] This invention relates to the field of power electronic devices, and more particularly to junction temperature early warning methods, devices, equipment, media, and products for IGCT. Background Technology

[0002] IGCTs (Integrated Gate Commutated Thyristors) are core switching devices in high-voltage, high-power converters, playing a crucial role in power conversion and transmission in applications such as flexible DC transmission and high-power frequency conversion drives. Due to limitations in chip thermal capacity and package heat dissipation, the power consumption generated during continuous switching operations causes a sustained rise in junction temperature. When the junction temperature exceeds the rated limit, it accelerates chip material fatigue and can lead to thermal breakdown in severe cases. Since IGCTs typically operate under high-voltage, high-current conditions, thermal failure not only damages the device itself but can also affect other devices in the same bridge arm and even the entire power unit, causing system downtime and significant economic losses. Therefore, timely warnings and protective lockouts before the junction temperature rises to a dangerous threshold are crucial for ensuring the safe operation of conversion equipment and extending device lifespan.

[0003] Existing technologies indirectly estimate junction temperature by measuring the on-state voltage drop of an integrated gate commutated thyristor (IGCT) in the on-state, thereby achieving junction temperature monitoring. However, this method has significant drawbacks: Firstly, the on-state voltage drop is not only affected by the junction temperature but also strongly correlated with factors such as the instantaneous value of the anode current and the degree of device aging. It is difficult to accurately separate the temperature component from the measured value, resulting in low accuracy of junction temperature monitoring. Secondly, this method can only be used to measure when the device is in the on-state. However, the integrated gate commutated thyristor (IGCT) enters the blocking state after being turned off, at which time the on-state voltage drop data cannot be obtained. This results in the inability to effectively monitor the junction temperature at the most critical moment of turn-off, creating a time blind spot in early warning decision-making. This makes it difficult to meet the real-time protection needs under high-risk operating conditions, leading to insufficient accuracy in junction temperature early warning. Summary of the Invention

[0004] This invention provides a method, apparatus, device, medium, and product for IGCT junction temperature early warning, which can improve the accuracy of IGCT junction temperature early warning.

[0005] In a first aspect, an embodiment of the present invention provides a junction temperature early warning method for an IGCT, the IGCT including a gate and a cathode, the method comprising: During the IGCT's shutdown operation or within a preset time after the shutdown operation, a first reverse voltage pulse is applied to the gate-cathode path of the IGCT, and the first gate-cathode current generated by the gate-cathode path after being excited by the first reverse voltage pulse is collected, wherein the gate-cathode path is determined by the gate and the cathode of the IGCT. Feature extraction is performed on the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to map the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

[0006] By applying a first reverse voltage pulse at the moment when the junction temperature is highest and the risk is greatest during the IGCT's turn-off action or within a preset time immediately following the turn-off action, the temperature measurement timing is precisely anchored at the turn-off instant. This solves the problem that traditional temperature measurement methods cannot capture the true junction temperature during the turn-off process, ensuring the timeliness and accuracy of junction temperature data in the time domain and laying the foundation for improving the accuracy of junction temperature early warning. By collecting the first gate-cathode current generated after the gate-cathode path is excited by the first reverse voltage pulse, and utilizing the physical characteristic that the breakdown current of the gate-cathode PN junction is strongly correlated with the junction temperature when it enters the avalanche conduction region under reverse voltage pulse excitation, the existing gate-cathode control channel is reused as a temperature measurement channel. This eliminates the need for additional temperature sensors or modifications to the device package, avoiding measurement deviations caused by the sensor installation position being off-center from the junction hotspot. The measurement principle ensures a strong correlation between the collected electrical signal and the junction temperature, providing reliable raw data support for improving the accuracy of junction temperature early warning. Feature extraction is performed on the first gate-cathode current to obtain the current peak value, current plateau average value, and current integrated charge. From the current waveform reflecting the breakdown characteristics of the gate-cathode PN junction, the current peak value, current plateau average value, and current integrated charge are extracted. The system utilizes multiple dimensions of features with the strongest temperature correlation to overcome the shortcomings of single features, such as susceptibility to noise interference and incomplete information. This provides rich and robust feature inputs for junction temperature conversion, ensuring the accuracy of junction temperature early warning from the feature level. The system maps the peak current, average current plateau, and current integral charge inputs to a junction temperature conversion model built based on historical junction temperature values ​​and historical gate cathode currents. The model fits the relationship between multi-dimensional features and junction temperature, transforming the original current features into accurate junction temperature values. This solves the technical challenge of separating temperature components from measured values ​​using the traditional on-state voltage drop method, ensuring high accuracy of junction temperature early warning from the data conversion level. Based on the estimated junction temperature value obtained from the mapping and the preset junction temperature early warning rules, the system generates junction temperature early warning results. By comparing the real-time junction temperature with the early warning rules, it outputs early warning information promptly when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of simultaneous temperature measurement during shutdown and immediate early warning, solving the problem of time delay in early warning decisions caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. This ensures the timeliness and accuracy of junction temperature early warning from the protection decision level, ultimately achieving high-precision early warning for IGCT junction temperature anomalies. This application can improve the accuracy of IGCT junction temperature early warning.

[0007] Furthermore, the amplitude of the first reverse voltage pulse is higher than the gate turn-off bias voltage of the IGCT and lower than the gate cathode avalanche tolerance of the IGCT.

[0008] By setting the amplitude of the first reverse voltage pulse to be higher than the gate turn-off bias voltage, it is ensured that the reverse voltage pulse can break through the conventional blocking state of the gate cathode PN junction, allowing it to enter the repeatable avalanche conduction region. This excites the gate cathode breakdown current, which is strongly correlated with the junction temperature, thus solving the problem that conventional driving voltages cannot allow the gate cathode path to enter the avalanche region and obtain an effective temperature measurement signal. This ensures the reliability of the temperature measurement signal from the perspective of excitation conditions. At the same time, by limiting the amplitude of the first reverse voltage pulse to below the gate cathode avalanche tolerance, it is ensured that each avalanche conduction is within the safe range that the device can withstand. This avoids irreversible damage to the gate cathode structure due to excessive excitation, solving the problem that the excitation signal may damage the device in traditional methods. This ensures the repeatability and long-term stability of the temperature measurement process from a safety perspective, thereby laying a safe and reliable excitation foundation for improving the accuracy of junction temperature early warning.

[0009] Furthermore, the IGCT also includes a sampling resistor connected in series in the loop of the gate cathode path, and the application of a first reverse voltage pulse to the gate cathode path of the IGCT specifically includes: A second reverse voltage pulse is applied to the gate cathode path of the IGCT; The second gate cathode current generated by the sampling resistor after being excited by the second reverse voltage pulse is collected; The compensation voltage is calculated based on the second gate cathode current and the resistance value of the sampling resistor; The second reverse voltage pulse is compensated using the compensation voltage to obtain the first reverse voltage pulse applied to the gate cathode path of the IGCT.

[0010] By applying a second reverse voltage pulse and acquiring the second gate cathode current, the voltage drop loss introduced by the sampling resistor is calculated in real time, and the second reverse voltage pulse is dynamically compensated using a compensation voltage to obtain the first reverse voltage pulse actually applied to the gate cathode path. This solves the problem that the actual excitation voltage is lower than the set value and the gate cathode path cannot stably enter the avalanche conduction region due to the series connection of the sampling resistor. From the perspective of excitation accuracy, it ensures that the gate cathode path can enter the repeatable avalanche conduction region under the same voltage conditions during each measurement, eliminating the inconsistency of measurement conditions caused by the sampling resistor, and providing a precise, controllable and repeatable excitation basis for improving the accuracy of junction temperature early warning.

[0011] Furthermore, the acquisition of the first gate cathode current generated after the gate cathode path is excited by the first reverse voltage pulse specifically includes: The voltage across the sampling resistor is differentially sampled to obtain a differential voltage signal; The first gate cathode current is calculated based on the differential voltage signal and the resistance value of the sampling resistor.

[0012] By differentially sampling the voltage across the sampling resistor, common-mode interference in the gate circuit under high dv / dt conditions during turn-off is effectively suppressed, ensuring the purity and accuracy of the voltage signal acquisition. Based on the differential voltage signal and the resistance value of the sampling resistor, the first gate cathode current is accurately calculated, solving the problem of inaccurate measurement in traditional sampling methods under high-voltage and fast-changing conditions. This provides high-fidelity current data for junction temperature conversion from the signal acquisition level, thus laying a reliable signal acquisition foundation for improving the accuracy of junction temperature early warning.

[0013] Furthermore, before performing feature extraction on the first gate cathode current to obtain the current peak value, current plateau mean value, and current integrated charge, the method further includes: The first gate cathode current is filtered to obtain the third gate cathode current; The third cathode current is denoised to obtain the fourth cathode current; The fourth gate cathode current is subjected to baseline correction processing to obtain the fifth gate cathode current; Extract a segment of the fifth gate cathode current within a preset time window, and perform feature normalization processing on the gate cathode current segment to obtain a normalized current segment.

[0014] By sequentially filtering, denoising, and baseline correction on the first cathode current, high-frequency noise, random interference, and baseline drift in the original signal are eliminated. Current segments within a preset time window are extracted to accurately pinpoint avalanche conduction periods strongly correlated with junction temperature. The extracted current segments are then normalized to eliminate the influence of individual device differences and operating condition fluctuations. This solves problems such as low signal-to-noise ratio, invalid information interference, and data inconsistency in the original signal. From the signal preprocessing level, high-quality and highly consistent normalized current data is provided for junction temperature conversion, thus laying a precise preprocessing foundation for improving the accuracy of junction temperature early warning.

[0015] Furthermore, the step of generating a junction temperature warning result based on the estimated junction temperature value and the preset junction temperature warning rule specifically includes: Determine whether the estimated junction temperature value is greater than or equal to a preset first threshold; If satisfied, determine whether the estimated junction temperature value is less than a preset second threshold. If satisfied, generate a first-level warning message. If not satisfied, determine whether the estimated junction temperature value is greater than or equal to the second threshold. If satisfied, it is determined whether the estimated junction temperature value is less than a preset third threshold. If satisfied, secondary intervention information is generated. If not satisfied, it is determined whether the estimated junction temperature value is greater than or equal to the third threshold. If satisfied, tertiary protection information is generated. The secondary intervention information includes shutdown frequency limiting information, drive derating information, and cooling enhancement control information. The tertiary protection information includes pulse lockout information, fault alarm information, and shutdown protection information. Based on the first-level early warning information, the second-level intervention information, and the third-level protection information, the junction temperature early warning result is determined.

[0016] This method generates junction temperature warning results based on the estimated junction temperature value obtained from the mapping and the preset junction temperature warning rules. By comparing the real-time junction temperature with the warning rules, warning information is output in a timely manner when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of shutdown synchronous temperature measurement and real-time warning, solving the problem of time delay in warning decision-making caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. It ensures the timeliness and accuracy of junction temperature warning from the perspective of protection decision-making, and ultimately achieves high-precision warning of abnormal junction temperature in IGCT.

[0017] Secondly, an embodiment of the present invention provides a junction temperature early warning device for an IGCT, wherein the IGCT includes a gate and a cathode, and the device includes a first module and a second module. The first module is configured to apply a first reverse voltage pulse to the gate-cathode path of the IGCT when the IGCT performs a turn-off action or within a preset time after the turn-off action, and to collect the first gate-cathode current generated by the gate-cathode path after being excited by the first reverse voltage pulse, wherein the gate-cathode path is determined by the gate and the cathode of the IGCT. The second module is used to extract features from the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to perform mapping processing on the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

[0018] By applying a first reverse voltage pulse at the moment of highest junction temperature and greatest risk during the IGCT's turn-off action or within a preset time immediately following the turn-off action, the temperature measurement timing is precisely anchored at the turn-off instant. This solves the problem that traditional temperature measurement methods cannot capture the true junction temperature during the turn-off process, ensuring the timeliness and accuracy of junction temperature data in the time domain and laying the foundation for improving the accuracy of junction temperature early warning. By collecting the first gate-cathode current generated after the gate-cathode path is excited by the first reverse voltage pulse, and utilizing the strong correlation between the breakdown current and junction temperature of the gate-cathode PN junction when it enters the avalanche conduction region under reverse voltage pulse excitation, the existing gate-cathode control channel is reused as a temperature measurement channel. This eliminates the need for additional temperature sensors or modifications to the device package, avoiding measurement deviations caused by sensor installation positions deviating from junction hotspots. The measurement principle ensures a strong correlation between the collected electrical signal and the junction temperature, providing reliable raw data support for improving the accuracy of junction temperature early warning. The second module extracts features from the first gate-cathode current to obtain the current peak, current plateau average, and current integrated charge. From the current waveform reflecting the breakdown characteristics of the gate-cathode PN junction... This method extracts multiple features most strongly correlated with junction temperature, overcoming the limitations of single features being susceptible to noise interference and lacking comprehensive information. This provides rich and robust feature inputs for junction temperature conversion, ensuring the accuracy of junction temperature early warning from a feature-level perspective. The method maps peak current, average current plateau, and current integral charge inputs to a junction temperature conversion model built based on historical junction temperature values ​​and historical gate-cathode currents. The model is then used to fit the relationship between multi-dimensional features and junction temperature, transforming the original current features into accurate junction temperature values. This solves the problem that the traditional on-state voltage drop method struggles to separate temperature from measured values. The technical challenge of temperature component analysis ensures high accuracy of junction temperature early warning from the data conversion level. Junction temperature early warning results are generated based on the estimated junction temperature value obtained from mapping and preset junction temperature early warning rules. By comparing the real-time junction temperature with the early warning rules, early warning information is output in a timely manner when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of simultaneous temperature measurement during shutdown and immediate early warning, solving the problem of time delay in early warning decisions caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. From the protection decision level, this ensures the timeliness and accuracy of junction temperature early warning, ultimately achieving high-precision early warning for abnormal junction temperatures in IGCT.

[0019] Thirdly, another embodiment of the present invention provides a terminal device, including: a processor, a memory, a communication interface, and a communication bus, wherein the processor, the memory, and the communication interface communicate with each other through the communication bus; The memory is used to store at least one executable instruction that causes the processor to perform the operation of the junction temperature early warning method of IGCT.

[0020] Fourthly, another embodiment of the present invention provides a computer-readable storage medium including a stored computer program, wherein the computer program, when running, controls the device or apparatus containing the computer-readable storage medium to perform a junction temperature early warning method for IGCT.

[0021] Fifthly, another embodiment of the present invention provides a computer program product, including a computer program or instructions, which, when executed by a communication device, implements a junction temperature early warning method for IGCT. Attached Figure Description

[0022] To more clearly illustrate the technical solution of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 This is a flowchart illustrating an embodiment of the junction temperature early warning method for IGCT provided in this application; Figure 2 This is a schematic diagram of the junction temperature early warning device for an IGCT provided in this application. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0026] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0027] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0028] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0029] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0030] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0031] In the field of power electronics, the integrated gate commutated thyristor (IGCT) is a core switching device in high-voltage, high-power converters, and its junction temperature early warning is crucial for ensuring power safety. Current methods indirectly estimate junction temperature and provide early warnings by measuring the on-state voltage drop of the IGCT in the on-state. However, this method has fundamental flaws: the on-state voltage drop is not only affected by the junction temperature but also strongly correlated with factors such as the instantaneous value of the anode current and the degree of device aging, making it difficult to accurately separate the temperature component, resulting in low accuracy in junction temperature monitoring. Furthermore, this method can only measure when the device is on, failing to obtain data during the turn-off phase, the moment when the junction temperature is most critical. This creates a time blind spot in early warning decisions, making it difficult to meet the immediate protection needs under high-risk operating conditions, and resulting in poor accuracy in junction temperature early warning.

[0032] See Figure 1 To improve the accuracy of junction temperature early warning for IGCT, an embodiment of the present invention provides a junction temperature early warning method for IGCT, wherein the IGCT includes a gate and a cathode, and the method includes steps S101 to S102. Step S101: When the IGCT performs a turn-off action or within a preset time after performing the turn-off action, a first reverse voltage pulse is applied to the gate cathode path of the IGCT, and the first gate cathode current generated by the gate cathode path after being excited by the first reverse voltage pulse is collected, wherein the gate cathode path is determined by the gate and the cathode of the IGCT. In some embodiments, during the time the IGCT performs a shutdown action or within a preset time after performing the shutdown action, the specific steps include: real-time monitoring of the shutdown command signal from the upper-level controller; when a shutdown command is detected, determining that the IGCT is about to enter the shutdown action process, and immediately starting the pulse generation process; or starting the pulse generation process within a preset time immediately after the IGCT performs the shutdown action, which can ensure that the application time of the first reverse voltage pulse is synchronized with the start time of the shutdown action.

[0033] It should be noted that the preset time specifically refers to a preset short period of time after the shutdown command is issued, during the voltage establishment process between the anode and cathode of the IGCT, or after the IGCT enters the blocking state, such as a time interval of 50 microseconds to 100 microseconds after the shutdown is completed. The specific window position and width can be determined through preliminary calibration tests according to the actual working conditions and measurement requirements.

[0034] In some embodiments, the amplitude of the first reverse voltage pulse is higher than the gate turn-off bias voltage of the IGCT and lower than the gate-cathode avalanche withstand capability of the IGCT. Specifically, a typical value of the gate turn-off bias voltage is obtained from the IGCT datasheet or through prior testing, and this value is used as the lower limit reference for the amplitude; the measured value of the gate-cathode avalanche withstand capability is obtained through avalanche breakdown testing, and this value is used as the upper limit reference for the amplitude; a voltage value with sufficient safety margin is selected between the lower limit reference and the upper limit reference as the set amplitude of the first reverse voltage pulse.

[0035] It should be noted that the pulse signal can be applied in the form of a step voltage or a controlled slope voltage, and the duration and maximum allowable current are limited, so that the device gate cathode path can stably enter the repeatable avalanche conduction region or the breakdown conduction region.

[0036] By setting the amplitude of the first reverse voltage pulse to be higher than the gate turn-off bias voltage, it is ensured that the reverse voltage pulse can break through the conventional blocking state of the gate cathode PN junction, allowing it to enter the repeatable avalanche conduction region. This excites the gate cathode breakdown current, which is strongly correlated with the junction temperature, thus solving the problem that conventional driving voltages cannot allow the gate cathode path to enter the avalanche region and obtain an effective temperature measurement signal. This ensures the reliability of the temperature measurement signal from the perspective of excitation conditions. At the same time, by limiting the amplitude of the first reverse voltage pulse to below the gate cathode avalanche tolerance, it is ensured that each avalanche conduction is within the safe range that the device can withstand. This avoids irreversible damage to the gate cathode structure due to excessive excitation, solving the problem that the excitation signal may damage the device in traditional methods. This ensures the repeatability and long-term stability of the temperature measurement process from a safety perspective, thereby laying a safe and reliable excitation foundation for improving the accuracy of junction temperature early warning.

[0037] In some embodiments, the IGCT further includes a sampling resistor connected in series in the loop of the gate cathode path. Applying a first reverse voltage pulse to the gate cathode path of the IGCT specifically includes: applying a second reverse voltage pulse to the gate cathode path of the IGCT; acquiring a second gate cathode current generated by the sampling resistor after being excited by the second reverse voltage pulse; calculating a compensation voltage based on the second gate cathode current and the resistance value of the sampling resistor; and compensating the second reverse voltage pulse with the compensation voltage to obtain the first reverse voltage pulse applied to the gate cathode path of the IGCT. Specifically, a second reverse voltage pulse is generated according to a preset initial amplitude and applied to the gate cathode path; the second gate cathode current flowing in the current loop is acquired in real time through the sampling resistor; the actual voltage drop generated by the sampling resistor under the current current is calculated according to the resistance value of the sampling resistor and the acquired second gate cathode current value to obtain the compensation voltage; the calculated compensation voltage is superimposed on the initial amplitude to obtain the compensated target amplitude; the output voltage is readjusted according to the compensated target amplitude, a first reverse voltage pulse is generated and applied to the gate cathode path to ensure that the actual voltage on the gate cathode path reaches the preset avalanche turn-on voltage.

[0038] By applying a second reverse voltage pulse and acquiring the second gate cathode current, the voltage drop loss introduced by the sampling resistor is calculated in real time, and the second reverse voltage pulse is dynamically compensated using a compensation voltage to obtain the first reverse voltage pulse actually applied to the gate cathode path. This solves the problem that the actual excitation voltage is lower than the set value and the gate cathode path cannot stably enter the avalanche conduction region due to the series connection of the sampling resistor. From the perspective of excitation accuracy, it ensures that the gate cathode path can enter the repeatable avalanche conduction region under the same voltage conditions during each measurement, eliminating the inconsistency of measurement conditions caused by the sampling resistor, and providing a precise, controllable and repeatable excitation basis for improving the accuracy of junction temperature early warning.

[0039] In some embodiments, acquiring the first gate cathode current generated after the gate cathode path is excited by the first reverse voltage pulse specifically includes: differentially sampling the voltage across the sampling resistor to obtain a differential voltage signal; and calculating the first gate cathode current based on the differential voltage signal and the resistance value of the sampling resistor. Specifically, the two ends of the sampling resistor are connected to the two input terminals of the differential sampling circuit, the difference between the voltages at the two ends is acquired, and the common-mode voltage change shared by the two ends is suppressed to obtain a differential voltage signal; the differential voltage signal is converted into a digital quantity, and the resistance value of the sampling resistor and the differential voltage value are substituted into Ohm's law to calculate the first gate cathode current value at the current moment.

[0040] It should be noted that the acquisition of the first cathode current can also adopt the isolated sampling method, which electrically isolates the sampling front end from the subsequent signal processing unit to block the common-mode current from coupling into the signal processing unit; the sampling resistor can be led out using Kelvin leads, the differential sampling circuit input is symmetrically wired, and a limiting and low-pass filter network is configured at the front end to suppress high-frequency spike interference.

[0041] By differentially sampling the voltage across the sampling resistor, common-mode interference in the gate circuit under high dv / dt conditions during turn-off is effectively suppressed, ensuring the purity and accuracy of the voltage signal acquisition. Based on the differential voltage signal and the resistance value of the sampling resistor, the first gate cathode current is accurately calculated, solving the problem of inaccurate measurement in traditional sampling methods under high-voltage and fast-changing conditions. This provides high-fidelity current data for junction temperature conversion from the signal acquisition level, thus laying a reliable signal acquisition foundation for improving the accuracy of junction temperature early warning.

[0042] Step S102: Feature extraction is performed on the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to perform mapping processing on the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

[0043] In some embodiments, before extracting features from the first gate cathode current to obtain the current peak, current plateau mean, and current integral charge, the method further includes: filtering the first gate cathode current to obtain a third gate cathode current; denoising the third gate cathode current to obtain a fourth gate cathode current; performing baseline correction on the fourth gate cathode current to obtain a fifth gate cathode current; and extracting a gate cathode current segment of the fifth gate cathode current within a preset time window, and performing feature normalization on the gate cathode current segment to obtain a normalized current segment. Specifically, the acquired digital sequence of the first gate cathode current is sequentially passed through a low-pass digital filter to remove high-frequency noise, through a wavelet denoising algorithm to eliminate random interference, and through a baseline correction algorithm to eliminate signal drift to obtain the fifth gate cathode current; according to a preset time window parameter, a data segment corresponding to the time period is extracted from the fifth gate cathode current sequence, which is the gate cathode current segment; the gate cathode current segment is subjected to min-max normalization to map all amplitudes to a uniform numerical range to obtain a normalized current segment.

[0044] By sequentially filtering, denoising, and baseline correction on the first cathode current, high-frequency noise, random interference, and baseline drift in the original signal are eliminated. Current segments within a preset time window are extracted to accurately pinpoint avalanche conduction periods strongly correlated with junction temperature. The extracted current segments are then normalized to eliminate the influence of individual device differences and operating condition fluctuations. This solves problems such as low signal-to-noise ratio, invalid information interference, and data inconsistency in the original signal. From the signal preprocessing level, high-quality and highly consistent normalized current data is provided for junction temperature conversion, thus laying a precise preprocessing foundation for improving the accuracy of junction temperature early warning.

[0045] In some embodiments, feature extraction is performed on the first cathode current to obtain the current peak value, the current plateau mean value, and the current integrated charge. Specifically, this includes: storing the normalized current segment after preprocessing the first cathode current in a cache array; traversing the entire current segment sequence to find the maximum value as the current peak value; identifying the interval in the current waveform that has entered a stable phase; calculating the arithmetic mean of all sampling points in the interval as the current plateau mean value; performing integration on the entire current waveform on the time axis; multiplying the current value of each sampling point by the sampling time interval and summing the results to obtain the current integrated charge.

[0046] In some embodiments, feature extraction is performed on the first cathode current to obtain relevant formulas for the current peak value, the average current plateau value, and the current integral charge, specifically including: Peak gate cathode current: ; Gate cathode current plateau mean: ; Gate cathode current integrated charge: ; In the formula, This represents the peak current. It is a function of the gate cathode current as a function of time; For time; This represents the average value of the current plateau. The start time of the avalanche conduction smooth interval; The end time of the stable avalanche conduction zone; The charge is the integral of the current; This is the start time of the time window; This is the end time of the time window.

[0047] In some embodiments, the junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT, specifically including: during the device calibration stage, placing the IGCT on a temperature-controlled heating platform and setting multiple different temperature points as reference junction temperatures; at each temperature point, after the IGCT temperature stabilizes, applying a reverse voltage pulse signal identical to the first reverse voltage pulse mentioned above, and acquiring the gate cathode current waveform corresponding to the IGCT; extracting the current peak value, current plateau mean value, and current integrated charge from the current waveforms acquired at each temperature point to form a feature quantity dataset; using the reference junction temperature as the output variable, and the current peak value, current plateau mean value, and current integrated charge as input variables, establishing a mapping relationship between the feature quantities and the junction temperature, thereby obtaining the junction temperature conversion model.

[0048] For example, the junction temperature conversion model can be a multinomial fitting model, a piecewise fitting model, a multi-parameter regression model, or a machine learning model.

[0049] In some embodiments, the peak current, the average current plateau, and the integrated current charge are input into a preset junction temperature conversion model to perform mapping processing on the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Specifically, this includes: substituting the extracted peak current, average current plateau, and integrated current charge as input parameters into the junction temperature conversion model; the junction temperature conversion model calculates the estimated junction temperature value corresponding to the IGCT at the current time based on the pre-established mapping relationship.

[0050] In some embodiments, generating a junction temperature warning result based on the estimated junction temperature value and a preset junction temperature warning rule specifically includes: determining whether the estimated junction temperature value is greater than or equal to a preset first threshold; if so, determining whether the estimated junction temperature value is less than a preset second threshold; if so, generating a first-level warning message; if not, determining whether the estimated junction temperature value is greater than or equal to the second threshold; if so, determining whether the estimated junction temperature value is less than a preset third threshold; if so, generating a second-level intervention message; if not, determining whether the estimated junction temperature value is greater than or equal to the third threshold; if so, generating a third-level protection message, wherein the second-level intervention message includes shutdown frequency limiting information, drive derating information, and cooling enhancement control information, and the third-level protection message includes pulse lockout information, fault alarm information, and shutdown protection information; and determining the junction temperature warning result based on the first-level warning message, the second-level intervention message, and the third-level protection message. Specifically, the junction temperature warning rule includes three progressively increasing junction temperature thresholds: the first threshold is the starting threshold for junction temperature warning, the second threshold is the trigger threshold for junction temperature intervention, and the third threshold is the critical threshold for junction temperature protection. All three threshold values ​​are based on the safe operating junction temperature range and failure critical junction temperature calibration of the IGCT. The estimated junction temperature value obtained through mapping is compared with the preset first threshold to determine if the estimated junction temperature value is greater than or equal to the first threshold. If not, the device junction temperature is considered to be within the normal operating range, and no warning information is generated. If it is, the estimated junction temperature value is further checked to see if it is less than the preset second threshold. If it is, the device junction temperature is considered to be in a slightly abnormal state, and a level one warning information is generated to remind maintenance personnel to pay attention to the device's operating status. If not, the estimated junction temperature value is checked again to see if it is greater than or equal to the second threshold. If the estimated junction temperature value is greater than or equal to the second threshold, then further checks are performed. The system first determines whether the estimated junction temperature is less than a preset third threshold. If it is, the device junction temperature is determined to be in a moderately abnormal state, and a secondary intervention message is generated, which includes turn-off frequency limiting information, drive derating information, and cooling enhancement control information. This message is sent to the IGCT control unit to trigger corresponding operating parameter adjustments to reduce the device junction temperature rise rate. If the estimated junction temperature is not less than the third threshold, the device junction temperature is determined to be in a severely abnormal state, approaching the failure threshold. A tertiary protection message is generated, which includes pulse lockout information, fault alarm information, and shutdown protection information. This message immediately triggers the IGCT's protection action, locking out subsequent drive pulses to prevent device failure in the next operation. At the same time, a fault alarm is issued, and shutdown protection is triggered according to the actual operating conditions. Finally, based on the actual judgment result, the primary warning message, secondary intervention message, or tertiary protection message is determined as the final junction temperature warning result.

[0051] It should be noted that pulse blocking is the most critical action in junction temperature protection. This is because if the IGCT performs the next shutdown action when the junction temperature is close to the failure edge, it is very likely to fail. Blocking subsequent pulses can fundamentally avoid this type of failure problem and is the most friendly protection solution for devices and equipment.

[0052] This method generates junction temperature warning results based on the estimated junction temperature value obtained from the mapping and the preset junction temperature warning rules. By comparing the real-time junction temperature with the warning rules, warning information is output in a timely manner when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of shutdown synchronous temperature measurement and real-time warning, solving the problem of time delay in warning decision-making caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. It ensures the timeliness and accuracy of junction temperature warning from the perspective of protection decision-making, and ultimately achieves high-precision warning of abnormal junction temperature in IGCT.

[0053] By applying a first reverse voltage pulse at the moment when the junction temperature is highest and the risk is greatest during the IGCT's turn-off action or within a preset time immediately following the turn-off action, the temperature measurement timing is precisely anchored at the turn-off instant. This solves the problem that traditional temperature measurement methods cannot capture the true junction temperature during the turn-off process, ensuring the timeliness and accuracy of junction temperature data in the time domain and laying the foundation for improving the accuracy of junction temperature early warning. By collecting the first gate-cathode current generated after the gate-cathode path is excited by the first reverse voltage pulse, and utilizing the physical characteristic that the breakdown current of the gate-cathode PN junction is strongly correlated with the junction temperature when it enters the avalanche conduction region under reverse voltage pulse excitation, the existing gate-cathode control channel is reused as a temperature measurement channel. This eliminates the need for additional temperature sensors or modifications to the device package, avoiding measurement deviations caused by the sensor installation position being off-center from the junction hotspot. The measurement principle ensures a strong correlation between the collected electrical signal and the junction temperature, providing reliable raw data support for improving the accuracy of junction temperature early warning. Feature extraction is performed on the first gate-cathode current to obtain the current peak value, current plateau average value, and current integrated charge. From the current waveform reflecting the breakdown characteristics of the gate-cathode PN junction, the current peak value, current plateau average value, and current integrated charge are extracted. The system utilizes multiple dimensions of features with the strongest temperature correlation to overcome the shortcomings of single features, such as susceptibility to noise interference and incomplete information. This provides rich and robust feature inputs for junction temperature conversion, ensuring the accuracy of junction temperature early warning from the feature level. The system maps the peak current, average current plateau, and current integral charge inputs to a junction temperature conversion model built based on historical junction temperature values ​​and historical gate cathode currents. The model fits the relationship between multi-dimensional features and junction temperature, transforming the original current features into accurate junction temperature values. This solves the technical challenge of separating temperature components from measured values ​​using the traditional on-state voltage drop method, ensuring high accuracy of junction temperature early warning from the data conversion level. Based on the estimated junction temperature value obtained from the mapping and the preset junction temperature early warning rules, the system generates junction temperature early warning results. By comparing the real-time junction temperature with the early warning rules, it outputs early warning information promptly when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of simultaneous temperature measurement during shutdown and immediate early warning, solving the problem of time delay in early warning decisions caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. This ensures the timeliness and accuracy of junction temperature early warning from the protection decision level, ultimately achieving high-precision early warning for IGCT junction temperature anomalies. This application can improve the accuracy of IGCT junction temperature early warning.

[0054] See Figure 2 Based on the above method embodiments, corresponding device embodiments are provided; An embodiment of the present invention provides a junction temperature early warning device for an IGCT, wherein the IGCT includes a gate and a cathode, and the device includes a first module 100 and a second module 200. The first module 100 is used to apply a first reverse voltage pulse to the gate cathode path of the IGCT when the IGCT performs a turn-off action or within a preset time after the turn-off action, and to collect the first gate cathode current generated by the gate cathode path after being excited by the first reverse voltage pulse, wherein the gate cathode path is determined by the gate and the cathode of the IGCT. The second module 200 is used to extract features from the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to perform mapping processing on the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

[0055] By applying a first reverse voltage pulse at the moment of highest junction temperature and greatest risk during the IGCT's turn-off action or within a preset time immediately following the turn-off action, the temperature measurement timing is precisely anchored at the turn-off instant. This solves the problem that traditional temperature measurement methods cannot capture the true junction temperature during the turn-off process, ensuring the timeliness and accuracy of junction temperature data in the time domain and laying the foundation for improving the accuracy of junction temperature early warning. By collecting the first gate-cathode current generated after the gate-cathode path is excited by the first reverse voltage pulse, and utilizing the strong correlation between the breakdown current and junction temperature of the gate-cathode PN junction when it enters the avalanche conduction region under reverse voltage pulse excitation, the existing gate-cathode control channel is reused as a temperature measurement channel. This eliminates the need for additional temperature sensors or modifications to the device package, avoiding measurement deviations caused by sensor installation positions deviating from junction hotspots. The measurement principle ensures a strong correlation between the collected electrical signal and the junction temperature, providing reliable raw data support for improving the accuracy of junction temperature early warning. The second module extracts features from the first gate-cathode current to obtain the current peak, current plateau average, and current integrated charge. From the current waveform reflecting the breakdown characteristics of the gate-cathode PN junction... This method extracts multiple features most strongly correlated with junction temperature, overcoming the limitations of single features being susceptible to noise interference and lacking comprehensive information. This provides rich and robust feature inputs for junction temperature conversion, ensuring the accuracy of junction temperature early warning from a feature-level perspective. The method maps peak current, average current plateau, and current integral charge inputs to a junction temperature conversion model built based on historical junction temperature values ​​and historical gate-cathode currents. The model is then used to fit the relationship between multi-dimensional features and junction temperature, transforming the original current features into accurate junction temperature values. This solves the problem that the traditional on-state voltage drop method struggles to separate temperature from measured values. The technical challenge of temperature component analysis ensures high accuracy of junction temperature early warning from the data conversion level. Junction temperature early warning results are generated based on the estimated junction temperature value obtained from mapping and preset junction temperature early warning rules. By comparing the real-time junction temperature with the early warning rules, early warning information is output in a timely manner when the junction temperature reaches or exceeds the threshold. This achieves closed-loop control of simultaneous temperature measurement during shutdown and immediate early warning, solving the problem of time delay in early warning decisions caused by the inability to obtain junction temperature data at the shutdown moment in traditional methods. From the protection decision level, this ensures the timeliness and accuracy of junction temperature early warning, ultimately achieving high-precision early warning for abnormal junction temperatures in IGCT.

[0056] It is understood that the above-described device embodiments correspond to the method embodiments of the present invention, and can realize the junction temperature early warning method for IGCT provided by any of the above-described method embodiments of the present invention.

[0057] It should be noted that the device embodiments described above are merely illustrative, and some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Furthermore, in the accompanying drawings of the device embodiments provided by this invention, the connection relationships between modules indicate that they have communication connections, which can specifically be implemented as one or more communication buses or signal lines. Those skilled in the art can understand and implement this without any creative effort.

[0058] Based on the above embodiment of the junction temperature early warning method for IGCT, another embodiment of the present invention provides a terminal device, which includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, it implements the junction temperature early warning method for IGCT according to any embodiment of the present invention.

[0059] For example, in this embodiment, the computer program can be divided into one or more modules, which are stored in the memory and executed by the processor to complete the present invention. The one or more modules may be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of the computer program in the terminal device.

[0060] The terminal device may be a desktop computer, laptop, handheld computer, or cloud server, etc. The terminal device may include, but is not limited to, a processor and a memory.

[0061] The processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor. The processor is the control center of the terminal device, connecting all parts of the terminal device via various interfaces and lines.

[0062] Based on the above-described method embodiments, another embodiment of the present invention provides a computer-readable storage medium including a stored computer program, wherein, when the computer program is executed, it controls the device where the computer-readable storage medium is located to execute the junction temperature early warning method for IGCT described in any of the above-described method embodiments of the present invention.

[0063] The modules / units integrated in the device / terminal equipment, if implemented as software functional units and sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the above embodiments of the present invention can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0064] Based on the above-described method embodiments, another embodiment of the present invention provides a computer program product, including a computer program or instructions, which, when executed by a communication device, implements a junction temperature early warning method for IGCT.

[0065] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A junction temperature early warning method for IGCT, characterized in that, IGCT includes a gate and a cathode, and the method includes: During the IGCT's shutdown operation or within a preset time after the shutdown operation, a first reverse voltage pulse is applied to the gate-cathode path of the IGCT, and the first gate-cathode current generated by the gate-cathode path after being excited by the first reverse voltage pulse is collected, wherein the gate-cathode path is determined by the gate and the cathode of the IGCT. Feature extraction is performed on the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to map the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

2. The junction temperature early warning method for IGCT as described in claim 1, characterized in that, The amplitude of the first reverse voltage pulse is higher than the gate turn-off bias voltage of the IGCT and lower than the gate cathode avalanche tolerance of the IGCT.

3. The junction temperature early warning method for IGCT as described in claim 1, characterized in that, The IGCT also includes a sampling resistor connected in series in the loop of the gate cathode path, and the application of a first reverse voltage pulse to the gate cathode path of the IGCT specifically includes: A second reverse voltage pulse is applied to the gate cathode path of the IGCT; The second gate cathode current generated by the sampling resistor after being excited by the second reverse voltage pulse is collected; The compensation voltage is calculated based on the second gate cathode current and the resistance value of the sampling resistor; The second reverse voltage pulse is compensated using the compensation voltage to obtain the first reverse voltage pulse applied to the gate cathode path of the IGCT.

4. The junction temperature early warning method for IGCT as described in claim 3, characterized in that, The acquisition of the first gate cathode current generated after the gate cathode path is excited by the first reverse voltage pulse specifically includes: The voltage across the sampling resistor is differentially sampled to obtain a differential voltage signal; The first gate cathode current is calculated based on the differential voltage signal and the resistance value of the sampling resistor.

5. The junction temperature early warning method for IGCT as described in claim 1, characterized in that, Before performing feature extraction on the first cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge, the method further includes: The first gate cathode current is filtered to obtain the third gate cathode current; The third cathode current is denoised to obtain the fourth cathode current; The fourth gate cathode current is subjected to baseline correction processing to obtain the fifth gate cathode current; Extract a segment of the fifth gate cathode current within a preset time window, and perform feature normalization processing on the gate cathode current segment to obtain a normalized current segment.

6. The junction temperature early warning method for IGCT as described in claim 1, characterized in that, The step of generating a junction temperature warning result based on the estimated junction temperature value and the preset junction temperature warning rule specifically includes: Determine whether the estimated junction temperature value is greater than or equal to a preset first threshold; If satisfied, determine whether the estimated junction temperature value is less than a preset second threshold. If satisfied, generate a first-level warning message. If not satisfied, determine whether the estimated junction temperature value is greater than or equal to the second threshold. If satisfied, it is determined whether the estimated junction temperature value is less than a preset third threshold. If satisfied, secondary intervention information is generated. If not satisfied, it is determined whether the estimated junction temperature value is greater than or equal to the third threshold. If satisfied, tertiary protection information is generated. The secondary intervention information includes shutdown frequency limiting information, drive derating information, and cooling enhancement control information. The tertiary protection information includes pulse lockout information, fault alarm information, and shutdown protection information. Based on the first-level early warning information, the second-level intervention information, and the third-level protection information, the junction temperature early warning result is determined.

7. A junction temperature early warning device for IGCT, characterized in that, IGCT includes a gate and a cathode, and the device includes a first module and a second module; The first module is configured to apply a first reverse voltage pulse to the gate-cathode path of the IGCT when the IGCT performs a turn-off action or within a preset time after the turn-off action, and to collect the first gate-cathode current generated by the gate-cathode path after being excited by the first reverse voltage pulse, wherein the gate-cathode path is determined by the gate and the cathode of the IGCT. The second module is used to extract features from the first gate cathode current to obtain the current peak value, the average current plateau value, and the current integrated charge. The current peak value, the average current plateau value, and the current integrated charge are then input into a preset junction temperature conversion model. The current peak value, the average current plateau value, and the current integrated charge are used to perform mapping processing on the junction temperature conversion model to obtain the estimated junction temperature value corresponding to the IGCT. Based on the estimated junction temperature value and the preset junction temperature warning rule, a junction temperature warning result is generated. The junction temperature conversion model is constructed based on the historical junction temperature value and historical gate cathode current of the IGCT.

8. A terminal device, characterized in that, include: The processor, memory, communication interface, and communication bus are provided, wherein the processor, memory, and communication interface communicate with each other via the communication bus. The memory is used to store at least one executable instruction that causes the processor to perform the operation of the junction temperature early warning method for IGCT as described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes a stored computer program, wherein, when the computer program is executed, it controls the device or apparatus containing the computer-readable storage medium to perform the junction temperature early warning method for IGCT as described in any one of claims 1 to 6.

10. A computer program product, comprising a computer program or instructions, characterized in that, When the computer program or instructions are executed by the communication device, the junction temperature early warning method for IGCT as described in any one of claims 1 to 6 is implemented.

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