A cobalt-chromium-ruthenium target material, a preparation method thereof and application thereof

Abstract

The application discloses a cobalt-chromium-ruthenium target material and a preparation method and application thereof, and belongs to the technical field of semiconductors, and comprises the following raw materials in mass fraction: Co element 10-50%, Cr element 5-20%, and the balance being Ru element. The application forms a cobalt-chromium-ruthenium ternary alloy by introducing the Ru element, utilizes the synergistic effect of the elements, significantly reduces the film resistance, refines the microstructure, enhances the barrier capability and improves the ultra-thin film forming quality, thereby breaking through the performance bottleneck of a binary system and meeting the needs of the electronic information manufacturing field.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and particularly relates to a cobalt-chromium-ruthenium target material, its preparation method, and its application. Background Technology

[0002] As semiconductor chips evolve towards multifunctionality and nanoscale dimensions, higher performance requirements are placed on integrated circuit materials. Currently, Al and Cu wiring are the two most mainstream technologies for semiconductor circuit wiring. In practical applications, a barrier layer needs to be added between Al and Cu to prevent diffusion into the dielectric layer. Cobalt-chromium-ruthenium thin films are widely used as diffusion barrier layer materials in chips due to their excellent magnetic properties, enhanced mechanical properties and wear resistance, outstanding corrosion resistance and chemical stability, and good electrical properties. However, the preparation of cobalt-chromium-ruthenium targets is challenging because the phase equilibrium and microstructure evolution of the ternary system (cobalt, chromium, ruthenium) is more complex than in binary systems. This poses a significant challenge to the homogenization of the target material, easily leading to compositional segregation, second-phase precipitation, low density, or abnormal grain growth, resulting in non-uniform target structure. This, in turn, affects the compositional consistency and performance stability of the sputtered film, failing to meet the performance requirements of the semiconductor industry.

[0003] Therefore, how to provide a cobalt-chromium-ruthenium target material with a simple preparation process, controllable microstructure, and controllable preparation cost is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention proposes a cobalt-chromium-ruthenium target material, its preparation method, and its application.

[0005] To achieve the above objectives, the present invention provides the following technical solution: A cobalt-chromium-ruthenium target material comprises the following raw materials by mass fraction: The composition is 10-50% Co, 5-20% Cr, and the balance is Ru.

[0006] Preferably, the raw materials include the following mass fractions: The composition of the elements is 49.39% Co, 19.81% Cr, and 30.8% Ru.

[0007] More preferably, the Ru element is added in the form of a ruthenium salt; The ruthenium salt is RuCl3·nH2O.

[0008] More preferably, the above raw material proportions are based on the mass of each element.

[0009] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: Ruthenium is chemically plated onto the surface of pure cobalt powder, then mixed with pure chromium powder for reduction treatment, and the reduced powder is then densified and sintered to obtain the cobalt-chromium-ruthenium target material.

[0010] Beneficial effects: The target material obtained by the method of the present invention has high density and uniform composition.

[0011] Preferably, before the chemical plating of ruthenium, a pretreatment step of pure cobalt powder is included: the pure cobalt powder is placed in a sulfuric acid solution and ultrasonically treated, then filtered and washed until neutral, thus completing the pretreatment of the pure cobalt powder.

[0012] Beneficial effects: The sulfuric acid solution in this invention can activate cobalt powder, thereby making it easier to plate ruthenium onto the sample surface.

[0013] More preferably, the concentration of the sulfuric acid solution is 0.05-0.5 mol / L.

[0014] More preferably, the ultrasonic treatment time is 30-60 minutes.

[0015] Beneficial effects: Sufficient ultrasound time can fully activate the cobalt powder.

[0016] Preferably, the electroless ruthenium plating includes the following steps: Using a mixed solution of RuCl3·nH2O, C4H6O6, and NH4Cl as the plating solution, pure cobalt powder was placed in the plating solution and sonicated. Then, hydrazine hydrate (N2H4·H2O) was added dropwise under stirring to perform chemical plating of ruthenium. After the reaction was completed, the solid was collected, washed, and dried to obtain ruthenium-plated cobalt mixed powder.

[0017] Beneficial effect: Under stirring conditions, ruthenium electroless plating on cobalt surfaces is more uniform.

[0018] More preferably, the ultrasound duration is 30-60 minutes.

[0019] Preferably, the molar ratio of RuCl3·nH2O, C4H6O6, and NH4Cl in the plating solution is 0.04:0.24:0.48.

[0020] Beneficial effect: This ratio allows for uniform plating of the required ruthenium onto the surface of cobalt powder.

[0021] Preferably, the chemical ruthenium plating time is 1-5 hours.

[0022] Beneficial effect: The reaction can be completed within this reaction time.

[0023] More preferably, the mixing with pure chromium powder involves placing the ruthenium-plated cobalt mixed powder and pure cobalt powder in an agate ball mill jar for high-energy ball milling.

[0024] More preferably, the high-energy ball mill is a dry mill, with a milling speed of 300-400 r / min, a milling time of 1-24 h, and a ball-to-material ratio of 10:1-20:1.

[0025] The grinding balls used in the dry grinding process are agate balls, and the jar is also made of agate.

[0026] Preferably, the reducing agent in the reduction treatment is hydrogen gas; The reduction treatment is performed at a temperature of 300-500℃ for 1-4 hours.

[0027] Beneficial effects: The above reduction process can remove oxidation on the powder surface and improve the density of the sintered sample.

[0028] More preferably, the densification sintering is performed by placing the reduced powder in a graphite mold (graphite mold size 100-300mm) and then placing it in a spark plasma sintering furnace for densification sintering.

[0029] Preferably, the densification sintering temperature is 800-1200℃, the time is 5-40 min, and the vacuum degree is <10. -3 Pa.

[0030] More preferably, the heating rate is 100℃ / min.

[0031] Beneficial effects: The above sintering conditions enable the target material to achieve a high density.

[0032] Application of a cobalt-chromium-ruthenium target in computer disk manufacturing.

[0033] More preferably, the field of electronic information manufacturing includes the fabrication of hard disks.

[0034] Compared with the prior art, the present invention has the following advantages and technical effects: This invention introduces Ru to form a cobalt-chromium-ruthenium ternary alloy. Utilizing the synergistic effect of these elements, it significantly reduces thin-film resistance while refining the microstructure, enhancing barrier properties, and improving the quality of ultrathin films. This overcomes the performance bottleneck of binary systems and meets the needs of the electronic information manufacturing field. Furthermore, the method provided by this invention is simple, the raw materials are readily available, and it is easy to promote and apply. Attached Figure Description

[0035] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings: Figure 1 This is a process flow diagram of the preparation method of the cobalt-chromium-ruthenium target material in Example 1 of the present invention; Figure 2SEM scan image (a) of the cobalt-chromium-ruthenium target obtained in Example 1 of the present invention and energy dispersive spectroscopy (EDS) image (b) of the corresponding points therein; Figure 3 The image shows a SEM scan (a) of the target material obtained in Comparative Example 1 of this invention and an energy dispersive spectroscopy (EDS) image (b) of the corresponding point. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0038] Unless otherwise specified, all raw materials used in the embodiments of this invention were purchased through commercial channels; The purity of the pure chromium powder is 99.999%, and the particle size is 10-30μm. The purity of the pure cobalt powder is 99.999%, and the particle size is 10-30μm; The purity of pure ruthenium powder is 99.999%, and the particle size is 10-30μm.

[0039] The grinding balls in the agate grinding jar are made of agate, and the jar itself is made of agate.

[0040] Unless otherwise specified, room temperature or normal temperature in the embodiments of the present invention refers to 25±3℃.

[0041] Example 1 A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0042] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L, deionized water 1 L) after pH adjustment to >12 by saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 3 h with a ball-to-material ratio of 10:1. The mixed powder of ruthenium-plated cobalt powder and pure chromium powder was then placed in a tube furnace and reduced at 350 °C for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 -3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0043] Example 2 A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0044] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L deionized water 1 L) after adjusting pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 6 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a tube furnace and reduced at 350 °C for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 - 3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0045] Example 3 A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0046] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L, deionized water 1 L) after adjusting pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 9 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a tube furnace and reduced at 350 °C for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 - 3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0047] Example 4 A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0048] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L, deionized water 1 L) after adjusting pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 ml) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 ℃ for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 12 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a tube furnace and reduced at 350 ℃ for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 -3 Under vacuum conditions of Pa, the cobalt-chromium-ruthenium target was obtained by densification sintering at 1100 °C for 5 min at a heating rate of 100 °C / min.

[0049] Example 5 A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0050] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: A cobalt-chromium-ruthenium target material comprises the following raw materials in mass fractions: 49.39% cobalt, 19.81% chromium and 30.8% ruthenium.

[0051] A method for preparing a cobalt-chromium-ruthenium target material includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L) adjusted to pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 ml) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 ℃ for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 14 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a tube furnace and reduced at 350 °C for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 -3 Under vacuum conditions of Pa, the cobalt-chromium-ruthenium target was obtained by densification sintering at 1100 °C for 5 min at a heating rate of 100 °C / min.

[0052] Comparative Example 1 A cobalt-chromium-ruthenium target material with the same chemical composition as in Example 1.

[0053] A method for preparing a cobalt-chromium-ruthenium target material differs from Example 1 only in that the manner in which ruthenium exists in the mixed powder is changed, and a chemical plating process is omitted. Specifically, it includes the following steps: According to the chemical composition of the cobalt-chromium-ruthenium target material in this comparative example, pure cobalt powder, pure chromium powder, and pure ruthenium powder were weighed out. The raw material powders were mixed and ball-milled at 300 r / min for 3 h. Then, the mixed powder was placed in a tube furnace and reduced at 350 ℃ for 3 h with hydrogen gas to obtain the reduced mixed powder. The reduced mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace under a vacuum degree <10 -3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0054] Comparative Example 2 A cobalt-chromium-ruthenium target material with the same chemical composition as in Example 1.

[0055] A method for preparing a cobalt-chromium-ruthenium target material, differing from Example 1 only in that high-energy ball milling is replaced by stirring and mixing to achieve uniformity, specifically including the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L) adjusted to pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-cobalt plating powder was stirred and mixed with 1.981 g of pure chromium powder. Then, the mixed powder of ruthenium-cobalt plating powder and pure chromium powder was placed in a tube furnace and reduced by hydrogen gas at 350 °C for 3 h to obtain the reduced ruthenium-cobalt-chromium plating mixed powder. The reduced ruthenium-cobalt-chromium plating mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 -3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0056] Comparative Example 3 A cobalt-chromium-ruthenium target material with the same chemical composition as in Example 1.

[0057] A method for preparing a cobalt-chromium-ruthenium target material differs from Example 1 only in that step (2) does not include a reduction process. Specifically, it includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L) adjusted to pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 3 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace under a vacuum degree <10 -3 Under vacuum conditions of Pa, the temperature was increased to 1100℃ at a heating rate of 100℃ / min for densification sintering for 5 min to obtain cobalt-chromium-ruthenium target material.

[0058] Comparative Example 4 A cobalt-chromium-ruthenium target material with the same chemical composition as in Example 1.

[0059] A method for preparing a cobalt-chromium-ruthenium target material differs from Example 1 only in that the sintering temperature in step (2) is replaced with 1200 ℃, and specifically includes the following steps: (1) According to the above proportion, 10 g of cobalt powder was added to 0.1 mol / L H2SO4 solution and sonicated for 60 min. The resulting mixture was vacuum filtered and washed until neutral. The obtained powder was added to about 20 mL of plating solution (RuCl3·nH2O 0.04 mol / L, C4H6O6 0.24 mol / L, NH4Cl 0.48 mol / L) adjusted to pH>12 with saturated KOH and sonicated for 30 min. Then, N2H4·H2O (30 mL) was added dropwise under magnetic stirring to carry out chemical plating reaction for 1 h. The mixture obtained after the reaction was vacuum filtered. The solid product obtained by filtration was washed until neutral and placed in a vacuum drying oven and dried at 60 °C for 24 h to obtain ruthenium-plated cobalt powder. (2) 8.019 g of the obtained ruthenium-plated cobalt powder and 1.981 g of pure chromium powder were added to an agate ball mill jar for high-energy ball milling at a speed of 300 r / min for 3 h with a ball-to-material ratio of 10:1. Then, the mixed powder of ruthenium-plated cobalt powder and pure chromium powder was placed in a tube furnace and reduced at 350 ℃ for 3 h with hydrogen gas to obtain the reduced ruthenium-plated cobalt-chromium mixed powder. The reduced ruthenium-plated cobalt-chromium mixed powder was placed in a graphite mold (graphite mold size 200 mm) and placed in a spark plasma sintering furnace at a vacuum degree <10 -3 Under vacuum conditions of Pa, the cobalt-chromium-ruthenium target was obtained by densification sintering at 1200 °C for 5 min at a heating rate of 100 °C / min.

[0060] Technical effects: 1. Performance Characterization Figure 2 and Figure 3 The images shown are SEM scans of the targets obtained in Example 1 and Comparative Example 1, and their corresponding energy dispersive spectroscopy (EDS) plots. Figure 2The element composition of each point is shown in Table 1: Table 1 Figure 3 The element composition of each point is shown in Table 2: Table 2 It can be seen that, compared with Comparative Example 1, the elemental composition of the target material obtained by the present invention is more uniform.

[0061] 2. Density The density of the obtained target material was tested according to the Archimedes displacement method, and the results are shown in Table 3: Table 3 It can be seen that the target materials obtained in the embodiments of the present invention have a relatively high overall density, with Example 5 reaching 99%, which is the best performance; while the density of the comparative examples is relatively low, with Comparative Example 3 at only 94.3%. This indicates that different preparation methods have a significant impact on the density of the target materials, and the method provided in the embodiments of the present invention is more advantageous.

[0062] The above are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A cobalt-chromium-ruthenium target material, characterized in that, Raw materials including the following mass fractions: The composition is 10-50% Co, 5-20% Cr, and the balance is Ru.

2. The cobalt-chromium-ruthenium target material according to claim 1, characterized in that, Raw materials including the following mass fractions: The composition of the elements is 49.39% Co, 19.81% Cr, and 30.8% Ru.

3. A method for preparing a cobalt-chromium-ruthenium target as described in claim 1 or 2, characterized in that, Includes the following steps: Ruthenium is chemically plated onto the surface of pure cobalt powder, then mixed with pure chromium powder and subjected to reduction treatment. The reduced powder is then densified and sintered to obtain the cobalt-chromium-ruthenium target material.

4. The method for preparing a cobalt-chromium-ruthenium target material according to claim 3, characterized in that, Before the electroless ruthenium plating, a pretreatment step of pure cobalt powder is also included: the pure cobalt powder is placed in a sulfuric acid solution and ultrasonically treated, then filtered and washed until neutral, thus completing the pretreatment of the pure cobalt powder.

5. The method for preparing a cobalt-chromium-ruthenium target according to claim 3, characterized in that, The electroless ruthenium plating process includes the following steps: Using a mixed solution of RuCl3·nH2O, C4H6O6 and NH4Cl as the plating solution, pure cobalt powder was placed in the plating solution and sonicated. Then, hydrazine hydrate was added dropwise under stirring to perform chemical plating of ruthenium. After the reaction was completed, the solid was collected, washed, and dried to obtain ruthenium-plated cobalt mixed powder.

6. The method for preparing a cobalt-chromium-ruthenium target according to claim 5, characterized in that, In the plating solution, the molar ratio of RuCl3·nH2O, C4H6O6, and NH4Cl is 0.04:0.24:0.

48.

7. The method for preparing a cobalt-chromium-ruthenium target material according to claim 3, characterized in that, The mixing method is as follows: the ruthenium-plated cobalt powder and pure chromium powder are added into an agate ball milling jar for high-energy ball milling. The high-energy ball milling speed is 300 r / min, the ball milling time is 3-9 h, and the ball-to-material ratio is 10:1-20:

1.

8. The method for preparing a cobalt-chromium-ruthenium target according to claim 3, characterized in that, The reducing agent in the reduction treatment is hydrogen gas; the temperature of the reduction treatment is 300-500℃, and the time is 1-4h.

9. The method for preparing a cobalt-chromium-ruthenium target according to claim 3, characterized in that, The densification sintering temperature is 800-1200℃, the time is 5-40 min, and the vacuum degree is <10. -3 Pa.

10. The application of a cobalt-chromium-ruthenium target as described in claim 1 or 2 in the field of computer disk manufacturing.

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