Power converter device
By employing a dual-sided cooled package and planar transformer design in the power converter device, the miniaturization and thermal management challenges of existing technologies are addressed, achieving a compact size and efficient circuit interconnection, improving switching performance and cost efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INFINEON TECH AUSTRIA AG
- Filing Date
- 2025-12-08
- Publication Date
- 2026-06-16
AI Technical Summary
Existing power converter devices face challenges in miniaturization, thermal management, layout optimization, and manufacturing process complexity, especially when interconnected by mechanical components on multiple substrates, resulting in large device form factors and complex manufacturing.
The dual-sided cooling package design encapsulates the semiconductor material in an insulating material and connects the two PCB substrates through integrated electronic devices. Circuit interconnection is achieved using planar transformers and conductive insertion elements, reducing conductivity loss and thermal management issues.
It achieves a compact size, enhanced switching performance, reduced conduction and terminal losses, improved cost efficiency and thermal management, and simplified manufacturing process.
Smart Images
Figure CN122225848A_ABST
Abstract
Description
Technical Field
[0001] This specification relates to embodiments of power converter devices. Background Technology
[0002] Power converter devices are fundamental electronic circuits that play a crucial role in modern power management systems. Their primary function is to convert the voltage of a current source from one level to another, ensuring stable and efficient power delivery to various electronic devices and systems. Power converter devices, such as DC-DC converters, are in high demand in rapidly developing industries such as data centers, automotive, consumer electronics, and industrial machinery and vehicles, where DC-DC converters must meet extremely high standards.
[0003] The implementation of power converter devices typically faces several technical challenges in meeting requirements regarding miniaturization and power density, performance enhancement (such as reduced losses and fewer parasitic components), layout optimization, thermal management, integration complexity, and cost.
[0004] Several power converter designs are known in the prior art, such as:
[0005] A power converter device implemented on a single substrate, comprising surface mount devices (SMDs) and reactive components mounted on the substrate, can be manufactured using simple and widely adopted fabrication processes. However, mounting all components of a power converter device on a single substrate requires significant space on the substrate. Optimizing the thermal and electrical performance of such a single-substrate assembly can be challenging. Furthermore, the substrate stacking of conventional components, such as PCB boards, is determined by the requirements of the transformer.
[0006] Power converter devices that embed bare dies or pre-packaged transistors in a PCB substrate do not require more space, switching loop characteristics can be reduced, and thermal management can be improved. However, the manufacturing process can be complex because the requirements for embedding semiconductors in the PBD substrate may conflict with the requirements for integrating magnetism into the same PCB.
[0007] Power converter devices situated on multiple substrates (e.g., PCBs) can overcome the design challenges mentioned above regarding embedding semiconductors within substrates. Specifically, transformers and other reactive components can be placed on one substrate, while the semiconductors are placed on different substrates. The two substrates are typically interconnected via mechanical components, such as copper blocks or vias. However, the process of interconnecting substrates using mechanical components can be complex, and the resulting power converter device may still have a relatively large form factor.
[0008] Therefore, there is a need for improved power converter devices that overcome the problems mentioned above. Summary of the Invention
[0009] The subject matter of independent claim 1 is presented. Features of exemplary embodiments are defined in the dependent claims.
[0010] According to an embodiment, the power converter device includes: a first substrate including a first circuit, wherein the first circuit includes at least one switching unit arranged as a semiconductor material in at least one integrated electronic device; and a second substrate including a second circuit, wherein the first substrate and the second substrate are connected to each other via the connection of the integrated electronic device and the second circuit.
[0011] In the example, the switching unit includes a metal-oxide-semiconductor field-effect transistor (MOSFET).
[0012] In the example, the integrated electronic device is configured as a dissipative package, particularly as a double-sided cooling package, which encapsulates semiconductor material within an insulating material.
[0013] In the example, the first side of the integrated electronic device includes at least a first access terminal of a first circuit, wherein the first access terminal is connected to a second circuit. In this example, the second side is opposite to the first side and includes at least a second access terminal, particularly a source terminal or a drain terminal, wherein the second access terminal is connected to a first substrate, particularly to a strip conductor on the first substrate.
[0014] In the example, the second circuit includes a transformer, specifically a planar transformer.
[0015] In the example, the transformer includes at least two windings.
[0016] In the example, at least one access terminal of the second circuit is directly connected to a first access terminal on the first side of the integrated electronic device, in particular, is soldered to a first access terminal on the first side of the integrated electronic device.
[0017] In the example, the power converter device includes conductive insertion elements, particularly copper plates or pillars, arranged between the integrated electronic device and the second circuit.
[0018] In this example, the power converter includes multiple switching units and is configured as a full-bridge to full-bridge DC-DC converter. In this example, the first full-bridge may include a standard MOSFET full-bridge, and the second full-bridge may include four-quadrant devices. Alternatively, both the first and second full-bridges may include standard MOSFET full-bridges.
[0019] In the example, the first substrate and the second substrate are each configured as a printed circuit board (PCB).
[0020] The present invention also relates to the use of dissipative packages, particularly dual-sided cooling packages, in power converter devices according to any of the preceding claims.
[0021] Based on some embodiments described herein, a design is proposed that includes compact size, enhanced switching performance, reduced conduction and terminal losses, and improved cost efficiency.
[0022] Those skilled in the art will recognize the additional features and advantages upon reading the following detailed description and viewing the accompanying drawings. Attached Figure Description
[0023] The components in the accompanying drawings are not necessarily to scale; rather, the focus is on illustrating the principles of the invention. Furthermore, in the drawings, the same reference numerals denote corresponding components. In the drawings:
[0024] Figure 1(A) schematically illustrates a top view of prior art components of a power converter device;
[0025] Figure 1(B) schematically illustrates a bottom view of the prior art components of the power converter device shown in Figure 1(A);
[0026] Figure 2(A) schematically and exemplary illustrates the equivalent circuit of the power converter device according to the first embodiment;
[0027] Figure 2(B) schematically and exemplary illustrates a switching unit arranged in an integrated electronic device;
[0028] Figure 2(C) schematically and exemplary illustrates the switching unit according to the first configuration;
[0029] Figure 2(D) schematically and exemplary illustrates the switching unit according to the second configuration;
[0030] Figure 2(E) schematically and exemplary illustrates a top view of a first substrate of a power converter device according to a first embodiment;
[0031] Figure 2(F) schematically and exemplary illustrates a bottom view of the second substrate of the power converter device according to the first embodiment;
[0032] Figure 2(G) shows a cross-sectional view of an electronic device via corresponding electrical contact patches arranged on a first substrate and connected to a second substrate;
[0033] Figure 2(H) schematically and exemplary illustrates a side view of a power converter device according to a first embodiment;
[0034] Figure 2 (I) schematically and exemplary illustrates a perspective view of a power converter device according to a first embodiment;
[0035] Figure 3(A) schematically and exemplary illustrates the equivalent circuit of the power converter device according to the second embodiment;
[0036] Figure 3(B) schematically and exemplary illustrates a top view of a first substrate of a power converter device according to a second embodiment;
[0037] Figure 3(C) schematically and exemplary illustrates a bottom view of the second substrate of the power converter device according to the second embodiment;
[0038] Figure 3(D) schematically and exemplary illustrates a side view of a power converter device according to a second embodiment;
[0039] Figure 4 A perspective view of a power converter device according to a third embodiment is schematically and exemplaryly illustrated.
[0040] Figure 5 A perspective view of a power converter device according to a fourth embodiment is schematically and exemplaryly illustrated. Detailed Implementation
[0041] In the following detailed description, reference is made to the accompanying drawings, which form a part of this document, and in which specific embodiments in which the invention may be practiced are illustrated by way of illustration.
[0042] In this regard, directional terms such as "top," "bottom," "below," "front," "behind," "back," "leading," "trailing," "above," "horizontal," and "vertical" may be used with reference to the orientation of the accompanying drawings. Because portions of the embodiments can be positioned in multiple different orientations, all directional terms are used for illustrative purposes and are by no means limiting. It should be understood that other embodiments can be utilized, and structural or logical changes can be made without departing from the scope of the invention. Therefore, the following detailed description is not intended to be limiting, and the scope of the invention is defined by the appended claims.
[0043] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the accompanying drawings. Each example is provided by way of explanation and is not intended to be limiting of the invention. For example, features illustrated or described in part of one embodiment may be used in other embodiments or in combination with other embodiments to produce yet another embodiment. The invention is intended to include such modifications and variations. Examples are described using concrete language, which should not be construed as limiting the scope of the appended claims. The drawings are not to scale and are for illustrative purposes only. For clarity, unless otherwise stated, the same elements are indicated by the same reference numerals in different drawings.
[0044] In this specification, the term "substrate" can generally be understood as an insulating material layer on which components of a power converter device are mounted. These components can be interconnected on the substrate by means of interconnecting elements, such as conductive paths. In the example, the first and second substrates are each configured as a printed circuit board (PCB).
[0045] The term “switching unit” as used in this article can be used to refer to electronic switches, such as diodes, or transistors configured for non-periodic or periodic switching.
[0046] As used in this specification, the term "gate driver" can be understood as a power amplifier circuit that receives a low-power input, for example, from a controller, and generates a high-current drive input for a switching unit, such as for the gate of a MOSFET transistor that can be implemented as a switching unit. The gate driver can be viewed as an interface between a control signal (of a digital or analog controller) and the switching unit. The control signal can be a periodic signal originating from a microcontroller.
[0047] As used in this specification, the term "power converter device" is intended to describe a device that converts a current source from one voltage level to another. In the example, the device is a DC-to-DC converter. In alternative examples, the device may be a DC-to-AC, AC-to-DC, or AC-to-AC converter. The device may be a semiconductor device and may be configured to convert 48 V to 12 V or 48 V to 1 V.
[0048] Figure 1A and Figure 1B A prior art power converter device 100 located on two substrates is shown, wherein Figure 1A and Figure 1BOpposite sides of a power converter device 100 are shown. In the prior art example shown, a first substrate 300 including a first circuit 310 and a second substrate 500 including a second circuit 510 are interconnected by mechanical components 601, 603, which are shown as copper blocks. In the prior art example, substrates 300, 500 are implemented as a PCB board, and the first circuit 310 includes two full-bridges of a full-bridge DC-DC power converter. The second circuit 510 includes a planar transformer. However, the prior art method shown requires a rather complex, multi-stage manufacturing process, in which substrates 300, 500 are... Figure 1A and Figure 1B The mechanical components 601 and 603 shown are mechanically and / or electronically interconnected.
[0049] First refer to Figure 2A-2I The first embodiment of the power converter device 1 configured as a DC-to-DC power converter should be interpreted as follows:
[0050] Figure 2A An equivalent circuit of a power converter device 1 is shown. The power converter device 1 includes, for example, a first circuit 31 on a first substrate 3 (first dashed boundary box), which includes eight switching units 33A-33H, each of which is arranged as a semiconductor material in at least one integrated electronic device. In the illustrated embodiment, each switching unit 33A-33H includes a MOSFET transistor.
[0051] exist Figure 2A In the power converter device 1 shown, switching units 33A-33H are arranged on a first substrate 3 as two full-bridge circuits. The first substrate 3 also includes four gate driver circuits 35A-35D, which are connected to the gates of the MOSFET transistors in the switching units 33A-33H. The gate driver circuits 35A-35D can be provided in the housing of an integrated electronic device or as discrete modules mounted on the first substrate 3.
[0052] The power converter device 1 also includes a second substrate 5 (second dashed bounding box), which is of the same type as the first substrate 3 in the illustrated embodiment, i.e., both substrate 3 and substrate 5 are PCB substrates. In alternative embodiments, the first substrate 3 and the second substrate 5 may be of different types. A second circuit 51 is mounted on the second substrate 5 and includes a transformer 511 in the illustrated embodiment. The transformer 511 may be a planar transformer, which allows voltage transformation and allows thermocouple isolation between the input and output sides of the power converter device 1. In the illustrated embodiment, the transformer 511 includes two windings. In alternative embodiments, the transformer 511 may include more than two windings, such as, for example, three windings. Furthermore, the second circuit 51 may alternatively or additionally include components such as a capacitor C, an inductor L, and / or an LC circuit. For example, the transformer 511 in the second circuit 51 may include a so-called primary resonant slot, which includes a capacitor and an inductor, and a center-tapped winding in a secondary slot. Alternatively, the second circuit 51 may include a transformer with a primary resonant slot and a single secondary winding, or a transformer including two secondary slots. Figure 2A The input voltage V of power converter device 1 is also shown. IN Connector, output voltage V OUT Connectors, and corresponding grounding connectors GND1 and GND2.
[0053] Figure 2B The diagram shows opposing surfaces 333 and 335 of a switching unit 33 arranged in an integrated electronic device 331, which includes a first surface 333 and opposing second surfaces 335. The switching unit 33 shown in the integrated electronic device 331... Figure 2E The first embodiment shown uses this. The integrated electronic device 331 is configured as a dissipative package, such as a so-called dual-side-cooled package, encapsulating the semiconductor material in an insulating material. The dual-side-cooled package can be, for example, a so-called OptiMOS. TM Package. Integrated electronic device 331 includes a first access terminal 337A on a first surface 333 and three second access terminals 337B, 338, and 339 on a second surface 335. One of the second access terminals 337B is indicated by the same reference numeral as the first access terminal 337A, i.e., reference numeral 337, because the two access terminals 337A and 337B are electrically connected to each other.
[0054] In a first configuration of the switching unit 33 including a MOSFET transistor, the first access terminal 337A and the first second access terminal 337B are the drain access terminals of the MOSFET transistor, the second second access terminal 338 is the gate access terminal of the MOSFET transistor, and the third second access terminal 399 is the source access terminal of the MOSFET transistor. In a second configuration of the switching unit 33, the first access terminal 337A and the first second access terminal 337B are the source access terminals of the MOSFET transistor, the second second access terminal 338 is the gate access terminal of the MOSFET transistor, and the third second access terminal 399 is the drain access terminal of the MOSFET transistor.
[0055] Figure 2C and Figure 2D The diagram illustrates two configurations of a switching unit not included in an integrated electronic device according to a first configuration and a second configuration.
[0056] Figure 2C The first configuration shown can also be referred to as a source-down configuration, wherein the first access terminal 337A and the first second access terminal 337B are drain access terminals of the MOSFET transistor, the second second access terminal 338 is the gate access terminal of the MOSFET transistor, and the third second access terminal 399 is the source access terminal of the MOSFET transistor.
[0057] Figure 2D The second configuration shown can also be referred to as a drain-down configuration, wherein the first access terminal 337A and the first second access terminal 337B are source access terminals of the MOSFET transistor, the second second access terminal 338 is the gate access terminal of the MOSFET transistor, and the third second access terminal 399 is the drain access terminal of the MOSFET transistor.
[0058] The above text Figure 2C and Figure 2D In the configuration shown, the second access terminals 337B, 338, and 339 can be located on the lead frame, allowing the MOSFET transistor to be mounted on the substrate. The first access terminal 337A can also be referred to as a clamp and can be implemented as a copper clamp, allowing vertical current to flow through the MOSFET transistor. Additionally, the clamp enables cooling from both sides of the MOSFET transistor, improving its thermal performance.
[0059] Figure 2EA top view of the first substrate 3 of the power converter device 1 according to the first embodiment is shown. Switching units 33A, 33B, 33E, and 33F are configured in a drain-down configuration, and switching units 33C, 33D, 33G, and 33H are configured in a source-down configuration and are arranged in... Figure 2B In the integrated electronic devices 331A-331F shown, switching units 33A, 33B, 33E, and 33F configured in a drain-down configuration and switching units 33C, 33D, 33G, and 33H configured in a source-down configuration are arranged in the same type of electronic device 331. Figure 2E Only the second access terminal is indicated, which is connected to the conductive path on substrate 3 for interconnection. Figure 2A The components shown in the equivalent circuit. Figure 2E In this configuration, the second access terminal is designated as the source (S), drain (D), and gate (G). Therefore, the first access terminals of switching units 33A, 33B, 33E, and 33F can be connected to the top side of switching units 33A, 33B, 33E, and 33F as source access terminals. Similarly, the first access terminals of switching units 33C, 33D, 33G, and 33H can be connected to the top side of switching units 33C, 33D, 33G, and 33H as drain access terminals.
[0060] same, Figure 2E Four gate driver circuits 35A-35D are shown, which are connected to the gate access terminals G of the MOSFET transistors in the switching units 33A-33H arranged in the integrated electronic devices 331A-331F.
[0061] Figure 2F A bottom view of the second substrate 5 of the power converter device 1 according to the first embodiment is shown. A transformer is arranged on the opposite side of the second substrate 5 and... Figure 2F The transformer is not visible in the image. In other examples, the transformer may also be located on the inside of the second substrate 5 or arranged around the second substrate 5. The ends of the two transformer coils are guided through vias, i.e., holes in the material of the second substrate 5, to the bottom side of the second substrate 5, wherein each of these vias is electrically connected to contact patches 53A-53D. Contact patches 53A-53D comprise a conductive material, such as copper, for electrically connecting the transformer coils via contact patches 53A-53D.
[0062] For assembling the power converter 1, the first access terminals of the switching units 33A-33H are electrically and mechanically connected to contact patches 53A-53D on the second substrate 5. Figure 2A The equivalent circuit shown corresponds to this. Electrical and mechanical connections can be made by directly soldering the first access terminal to the corresponding contact patches 53A-53D.
[0063] Figure 2G It shows how by arranging in such Figure 2E On the first substrate 3 shown and connected to as Figure 2F The figure shows a cross-sectional view in the vertical direction of the integrated electronic devices 331A-331D of the corresponding electrical contact patches 53A, 53B of the second substrate 5.
[0064] exist Figure 2G The diagram illustrates second access terminals 337B, 338, and 339 of MOSFET transistor electronic devices 331A-331D, which are respectively adjacent to each other to facilitate understanding of the invention. In examples of the invention, the second access terminals 337B, 338, and 339 can be distributed as follows: Figure 2B On the second surface 335 of the electronic devices 331A-331D shown. Figure 2G In the accompanying drawings, the access terminals are designated by reference numerals 337A, 337B, 338, and 339, and are further indicated as source (S), drain (D), and gate (G) to facilitate understanding of the invention. Figure 2E In the embodiment shown, the second access terminals 337B, 338, and 339 are connected to the substrate 3, i.e., connected to the conductive path on the substrate 3, while the first access terminal 337A of the electronic devices 331A-331D, located on the corresponding first surface 333 of the electronic devices 331A-331D, is connected to... Figure 2G The electrical contact patches 53A and 53B of the second substrate 5 shown are, with Figure 2A The equivalent circuit corresponds to this.
[0065] exist Figure 2H The image shows a side view of the assembled power converter device 1 according to the first embodiment, and... Figure 2I A perspective view of a power converter device 1 according to a first embodiment is shown, wherein a first substrate 3 and a second substrate 5 are connected to each other via a direct connection between integrated electronics 331A-331F and a second circuit 51. Here, the first substrate 3 and the second substrate 5 are bridged via a top side (i.e., a first access terminal of the integrated electronics 331A-331F). This configuration allows for a reduced coverage area corresponding to lateral layouts known in the prior art. Heat distribution in the power converter device 1 can be improved due to vertical current flowing through the MOSFET transistors, and conductivity losses and loop inductance from the access terminals of the MOSFET transistors used internally by the integrated electronics 331A-331F can be reduced / eliminated. Furthermore, the configuration described herein can be manufactured using standard PCB fabrication methods.
[0066] Figure 3A An equivalent circuit of the power converter device 1 according to the second embodiment is shown. Figure 3AThe equivalent circuit shown is Figure 2A The equivalent circuit of the first embodiment shown differs in that only one of the two full bridges includes switching units 33A-33D comprising MOSFET transistors. The second full bridge in the second embodiment includes switching units 33E-33H comprising four-quadrant devices.
[0067] Figure 3B A top view of the first substrate 3 of the power converter device 1 according to the second embodiment is shown. Switching units 33A-33H are according to... Figure 3A The equivalent circuit shown is arranged on the first substrate 3. The second access terminal located on the second side of the switching units 33A-33H in the integrated electronic devices 331A-331F is... Figure 3B The three terminals are represented as source S, drain D, and gate G.
[0068] As shown in the figure, the inventive concept of this invention is applicable and can also be applied to topologies different from those described in the first embodiment.
[0069] Figure 3C A bottom view of the second substrate 5 of the power converter device 1 according to the second embodiment is shown. The second substrate 5 is similar to the second substrate 5 of the first embodiment, except that the geometry of the contact patches 53A-53D and the distance between the contact patches 53A-53D can be varied to make electrical and mechanical contact with the switching units 33A-33H of the second embodiment, which are arranged on the corresponding first substrate 3.
[0070] Figure 3D A side view of the power converter device 1 according to the second embodiment is shown.
[0071] Figure 4 A perspective view of a power converter device 1 according to a third embodiment is shown. The power converter device 1 of the third embodiment differs from the power converter devices of the first and second embodiments in that the first substrate 3 and the second substrate 5 are not connected to each other via a direct connection between the integrated electronics and the second circuit 51. Instead, the power converter device 1 includes conductive insertion elements 7A-7D, which are implemented as flat copper plates and arranged between access terminals on the integrated electronics 331A-331F and contact patches of the second circuit 51. First access terminals can be soldered to one side of the respective conductive insertion elements 7A-7D, and contact patches of the first circuit 51 can be soldered to the opposite side of the respective conductive insertion elements 7A-7D.
[0072] The height of the conductive insert elements 7A-7D can be customized to create space for taller components to be placed between the first substrate 3 and the second substrate 5. Similarly, the copper-based conductive insert elements 7A-7D can serve as a heat sink and provide additional thermal enhancement. Furthermore, the conductive insert elements 7A-7D can contribute to the mechanical stability of the component and can be used to mitigate reliability issues such as those caused by thermal cycling.
[0073] Figure 5 A perspective view of a power converter device 1 according to a fourth embodiment employing conductive insertion elements 7A-7D is shown. Figure 5 In this embodiment, the conductive insertion elements 7A-7D are implemented as U-shaped copper elements and are arranged between the integrated electronic device and the contact patch of the second circuit 51. The U-shaped copper elements can increase mechanical stability, relieve thermomechanical stress on the access terminal, and facilitate mechanical assembly.
[0074] As described above, the conductive insertion elements 7A-7D of Embodiments 3 and 4 can be used with the power converter device 1 according to Embodiments 1 and 2.
Claims
1. A power converter device (1), comprising: A first substrate (3) includes a first circuit (31), wherein the first circuit (31) includes at least one switching unit (33A-33H), the at least one switching unit (33A-33H) being arranged as a semiconductor material in at least one integrated electronic device (331A-331H); as well as The second substrate (5) includes the second circuit (51). Its features are, The first substrate (3) and the second substrate (5) are connected to each other through the connection of the integrated electronic device (331A-331H) and the second circuit (51).
2. The power converter device (1) according to claim 1, characterized in that, The switching unit (33A-33H) includes a metal-oxide-semiconductor field-effect transistor (MOSFET).
3. The power converter device (1) according to claim 1 or 2, characterized in that, The integrated electronic device (331A-331H) is configured as a dissipative package, particularly as a double-sided cooling package, encapsulating the semiconductor material in an insulating material.
4. The power converter device (1) according to any one of the preceding claims, characterized in that, The first side (333) of the integrated electronic device (331A-331H) includes at least a first access terminal (337A) of the first circuit (31), wherein the first access terminal (337A) is connected to the second circuit (51).
5. The power converter device (1) according to claim 4, characterized in that, The second side (335) opposite to the first side (333) includes at least a second access terminal (337B, 338, 339), particularly a source terminal or a drain terminal, wherein the second access terminal (337B, 338, 339) is connected to the first substrate (3), particularly to a strip conductor on the first substrate (3).
6. The power converter device (1) according to any one of the preceding claims, characterized in that, The second circuit (51) includes a transformer (511), particularly a planar transformer.
7. The power converter device (1) according to claim 6, characterized in that, The transformer (511) includes at least two windings.
8. The power converter device (1) according to any one of claims 4 to 7, characterized in that, At least one access terminal (53A-53D) of the second circuit (51) is directly connected to the first access terminal (337A) on the first side (333) of the integrated electronic device (331A-331H), and in particular is soldered to the first access terminal (337A) on the first side (333) of the integrated electronic device (331A-331H).
9. The power converter device (1) according to any one of claims 4 to 7, characterized in that... Conductive insertion elements (7A-7D), particularly copper plates or pillars, are arranged between the integrated electronic device (331A-331H) and the second circuit (51).
10. The power converter device (1) according to any one of the preceding claims, characterized in that, The power converter device (1) includes multiple switching units (33A-33H) and is configured as a full-bridge to full-bridge DC-DC converter.
11. The power converter device (1) according to claim 10, characterized in that, The first full-bridge includes a standard MOSFET full-bridge, and the second full-bridge includes four-quadrant devices.
12. The power converter device (1) according to any one of the preceding claims, characterized in that, The first substrate (3) and the second substrate (5) are each configured as printed circuit board (PCB).
13. Use of a dissipative package, particularly a dual-sided cooling package, in a power converter device (1) according to any one of the preceding claims.