An Er-doped WS2 / PbSe heterojunction photodetector and a method for regulating photoelectric properties

By using Er-doped WS2/PbSe heterojunctions and combining them with external electric field modulation, the problems of insufficient light absorption and low carrier mobility of WS2/PbSe heterojunctions have been solved, realizing the modulation of photoelectric properties of high-performance broadband photodetectors, which are suitable for ultraviolet and infrared light detection.

CN122227684APending Publication Date: 2026-06-16RUISHI (SHENZHEN) DISPLAY TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
RUISHI (SHENZHEN) DISPLAY TECHNOLOGY CO LTD
Filing Date
2026-03-13
Publication Date
2026-06-16

AI Technical Summary

Technical Problem

Existing WS2 and PbSe heterojunctions in photodetectors suffer from insufficient light absorption and low carrier mobility, and are difficult to effectively control using traditional methods.

Method used

A type-II heterojunction was formed by using an Er-doped WS2/PbSe heterojunction structure and controlling the band structure and light absorption properties through first-principles calculations. The carrier mobility and light absorption coefficient were adjusted by combining an external electric field.

Benefits of technology

It significantly improves carrier mobility, broadens the light absorption range, enhances the absorption capacity of ultraviolet and infrared light, and improves the performance and stability of photodetectors, making it suitable for high-performance broadband photodetectors.

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Abstract

The application discloses an Er-doped WS2 / PbSe heterojunction photoelectric detector and a photoelectric property regulation method, relates to the technical field of photoelectric detection, and the Er-doped WS2 / PbSe heterojunction photoelectric detector comprises, from bottom to top, a substrate, a WS2 monolayer and a PbSe monolayer; wherein the WS2 monolayer is doped with a rare earth element Er. The application solves the problem of weak light absorption capacity of the intrinsic WS2 / PbSe heterojunction by doping with the rare earth element Er, significantly improves the carrier mobility, introduces an impurity energy level, expands the light absorption range, enhances the absorption capacity of ultraviolet light and infrared light, improves the light absorption capacity and widens the absorption spectrum; the WS2 / PbSe van der Waals heterojunction obtained by doping with the rare earth element Er has excellent thermal stability and structural stability, can still maintain stable structure and photoelectric properties at 300K, and provides a new material and method for preparing a high-performance, wide-band photoelectric detector.
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