Miniature light emitting diode chip package structure and light source machine

Abstract

The application discloses a micro light emitting diode chip packaging structure. The structure comprises a substrate, a micro light emitting diode chip arranged on a first surface of the substrate, and a connector arranged on a second surface of the substrate opposite to the first surface. The application sets the micro light emitting diode chip and the connector in a vertical direction and realizes electrical connection, thereby reducing the total surface area of the packaging structure, reducing the electrical connection distance between the micro light emitting diode chip and the connector, and improving the response speed of the micro light emitting diode chip.

Description

Technical Field

[0001] This invention generally relates to the field of micro light-emitting diode (LED) chip packaging technology. Specifically, this invention relates to a micro LED chip packaging structure and a light source. Background Technology

[0002] Micro-LEDs are an emerging display technology that miniaturizes traditional LEDs to the micrometer scale and integrates these tiny LED arrays onto a single chip, enabling the formation of high-density display panels. Compared to traditional LEDs, micro-LEDs offer advantages such as high brightness, high contrast, high response speed, high efficiency, long lifespan, wide color gamut, and small size, and have already found widespread application.

[0003] The package structure of a miniature light-emitting diode (LED) chip, acting as a bridge connecting the LED chip and external circuitry, is crucial to the performance of the LED. However, in existing technologies, connectors are typically placed on the substrate next to the LED chip. This not only results in an excessively large package area but also leads to complex electrical connections and slow response times between the connector and the LED chip. Summary of the Invention

[0004] To at least partially solve the above-mentioned problems in the prior art, the present invention proposes a micro light-emitting diode chip packaging structure, comprising:

[0005] substrate;

[0006] A miniature light-emitting diode chip is disposed on the first surface of the substrate; and

[0007] A connector is disposed on a second surface of the substrate opposite to the first surface.

[0008] In one embodiment of the present invention, the connector is arranged below the micro light-emitting diode chip.

[0009] In one embodiment of the present invention, the substrate is a ceramic substrate, wherein the ceramic substrate has an internal electrical connection channel and an external electrical connection pad on its surface.

[0010] In one embodiment of the present invention, a first end of the connector is electrically connected to the electrical connection channel, and a second end of the connector is electrically connected to the electrical connection component.

[0011] In one embodiment of the present invention, the micro light-emitting diode chip is electrically connected to the electrical connection channel via the electrical connection pad.

[0012] In one embodiment of the present invention, the electrical connection component includes a gold finger, a metal contact, a pin, or a metal sheet.

[0013] In one embodiment of the present invention, the connector includes a circuit board and gold fingers coated on the circuit board.

[0014] In one embodiment of the present invention, the ceramic substrate comprises:

[0015] A mounting seam, provided on the second surface, is for inserting the circuit board; and

[0016] A contact portion is provided in the mounting seam for electrical contact with the gold fingers on the circuit board.

[0017] In one embodiment of the present invention, the circuit board is inserted into the mounting seam by an interference fit.

[0018] In one embodiment of the present invention, the circuit board is inserted into the mounting seam by form fit or force fit and is fixed in the mounting seam by adhesive.

[0019] In one embodiment of the present invention, a recess is provided on a first surface of the substrate, wherein the micro light-emitting diode chip is disposed in the recess.

[0020] In one embodiment of the present invention, a first portion of the micro LED chip is located within the recess, and a second portion of the micro LED chip extends beyond the recess and is located outside the recess.

[0021] In one embodiment of the present invention, the shape of the recess is specified as square, circular, rectangular, polygonal or other irregular shape.

[0022] In one embodiment of the present invention, the size of the recess is matched with the size of the micro light-emitting diode chip, and the depth of the recess is 20 micrometers to 300 micrometers.

[0023] In one embodiment of the present invention, the thickness of the substrate is specified to be greater than or equal to 100 micrometers.

[0024] In one embodiment of the present invention, a first surface of the micro light-emitting diode chip is connected to the substrate, and an active region is provided on a second surface of the micro light-emitting diode chip opposite to the first surface.

[0025] In one embodiment of the present invention, the shape and size of the micro light-emitting diode chip are matched with the shape and size of the recess.

[0026] In one embodiment of the present invention, the shape of the micro light-emitting diode chip is specified as square, circular, rectangular, polygonal or other irregular shape.

[0027] In one embodiment of the present invention, the micro light-emitting diode chip packaging structure is characterized by further comprising:

[0028] A molded body disposed on the micro light-emitting diode chip, wherein the molded body has a window to expose the active region.

[0029] In one embodiment of the present invention, a first portion of the molded body is disposed on the micro light-emitting diode chip, and a second portion of the molded body is disposed on the substrate.

[0030] In one embodiment of the present invention, the molded body is a wire bonding protective adhesive and covers the wire bonding.

[0031] In one embodiment of the present invention, the material of the molded body is selected from the group consisting of epoxy resin, silicone resin, ethylene-vinyl acetate copolymer, and polyimide.

[0032] In one embodiment of the present invention, the micro light-emitting diode chip packaging structure further includes:

[0033] A light-transmitting protective layer is arranged on the window.

[0034] In one embodiment of the invention, the window is provided with a support notch for supporting a light-transmitting protective layer.

[0035] In one embodiment of the present invention, the width of the support notch is 120 micrometers to 150 micrometers, and the depth of the support notch is 70 micrometers to 300 micrometers.

[0036] In one embodiment of the present invention, a gap exists between the light-transmitting protective layer and the active region.

[0037] In one embodiment of the present invention, the material of the light-transmitting protective layer is selected from the group consisting of: quartz glass, silicate glass, soda-lime glass, fluoride glass, plexiglass, and sapphire.

[0038] In one embodiment of the present invention, the micro light-emitting diode chip packaging structure further includes:

[0039] A protective layer adhesive is disposed at the support notch between the light-transmitting protective layer and the molded body, wherein the light-transmitting protective layer is bonded and fixed to the mold window by the protective layer adhesive.

[0040] In one embodiment of the present invention, the material of the protective layer adhesive includes: ethylene-vinyl acetate copolymer.

[0041] In one embodiment of the present invention, the micro light-emitting diode chip packaging structure further includes:

[0042] A chip adhesive is disposed between the substrate and the micro LED chip to bond the micro LED chip to the substrate.

[0043] In one embodiment of the present invention, the material of the chip adhesive is selected from the group consisting of conductive adhesive, silver paste, or die bonding film.

[0044] In one embodiment of the present invention, the micro light-emitting diode chip packaging structure further includes:

[0045] Wire bonding is performed on the side of the micro LED chip to electrically connect the micro LED chip to the electrical connection pads of the substrate.

[0046] In one embodiment of the present invention, the edge region of the micro light-emitting diode chip is provided with a plurality of input / output ports, wherein the wire bonding connects the electrical connection pads to the plurality of input / output ports.

[0047] In one embodiment of the present invention, the micro light-emitting diode chip is square in shape, wherein the plurality of input / output ports are arranged on a first side and a second side opposite to the first side of the micro light-emitting diode chip, and the bonding wires are arranged on the first side and the second side opposite to the first side of the micro light-emitting diode chip to electrically connect the circuit board to the plurality of input / output ports.

[0048] In one embodiment of the present invention, the material of the bonding wire includes gold or aluminum.

[0049] In one embodiment of the invention, the molded body is arranged on the punching wire to cover the punching wire.

[0050] In one embodiment of the present invention, the micro light-emitting diode chip includes a memory chip and a display chip, wherein the memory chip is disposed on a first surface of the substrate, and the display chip is disposed on the memory chip, wherein the memory chip and the display chip are electrically connected to the substrate by wire bonding.

[0051] In one embodiment of the present invention, the substrate is a ceramic substrate, wherein the ceramic substrate has an internal electrical connection channel and an external electrical connection pad on its surface.

[0052] In one embodiment of the present invention, the wire bonding connects the memory chip and the display chip to the electrical connection pads, and the electrical connection pads connect the memory chip and the display chip to the electrical connection channel.

[0053] In one embodiment of the present invention, the bonding wires are arranged on the sides of the memory chip and the display chip.

[0054] In one embodiment of the present invention, the edge regions of the memory chip and the display chip are provided with a plurality of input / output ports, wherein the bonding wires electrically connect the substrate to the plurality of input / output ports.

[0055] In one embodiment of the present invention, the memory chip and the display chip are square in shape, wherein the plurality of input / output ports are arranged on a first side of the memory chip and a second side opposite to the first side, and the bonding wires are arranged on the first side of the memory chip and the second side opposite to the first side to electrically connect the substrate to the plurality of input / output ports.

[0056] In one embodiment of the present invention, the memory chip is specified to be one or more layers.

[0057] In one embodiment of the present invention, the size of the memory chip is larger than the size of the micro light-emitting diode chip.

[0058] In one embodiment of the present invention, the shape of the memory chip is specified as square, circular, rectangular, polygonal, or irregular.

[0059] In one embodiment of the present invention, the micro light-emitting diode chip includes a memory chip and a display chip, wherein the memory chip is disposed on a first surface of the substrate, the display chip is disposed on the memory chip, and the display chip has a first through-silicon via (TSV) inside, and the display chip and the memory chip are electrically connected through the first TSV.

[0060] In one embodiment of the present invention, the memory chip is provided with a second through-silicon via (TSV), wherein the memory chip is electrically connected to the substrate through the second TSV.

[0061] In one embodiment of the present invention, the first through-silicon via includes:

[0062] A first through-hole is disposed inside the display chip and communicates a first surface of the display chip and a second surface opposite to the first surface, wherein the first through-hole is filled with a conductive material; and

[0063] A first through-hole contact is disposed on a first surface of the display chip, and the first through-hole contact is connected to a first through-hole, wherein the first through-hole contact is used for electrical contact between the display chip and the memory chip. In one embodiment of the present invention, the second through-silicon via includes:

[0064] A second via is disposed inside the memory chip and connects a first surface of the memory chip to a second surface opposite to the first surface, wherein the second via is filled with a conductive material; and

[0065] A second through-hole contact is disposed on a first surface of the memory chip, and the second through-hole contact is connected to the second through-hole, wherein the second through-hole contact is used for electrical contact between the memory chip and the substrate.

[0066] In one embodiment of the present invention, the diameter of the first through-silicon via and / or the second through-silicon via is specified to be 20 to 30 micrometers.

[0067] In one embodiment of the present invention, the aspect ratio of the first through-silicon via and / or the second through-silicon via is specified as 10:1.

[0068] In one embodiment of the present invention, the interior of the first through-silicon via and / or the second through-silicon via is filled with conductive metal.

[0069] In one embodiment of the present invention, the conductive metal is specified to include gold or copper.

[0070] In one embodiment of the present invention, the memory chip is specified to be one or more layers.

[0071] In one embodiment of the present invention, the multilayer memory chips are electrically connected through a second through-silicon via (TSV), wherein the second TSV contact is used for electrical contact between the plurality of memory chips.

[0072] The present invention also proposes a light source device, which includes the aforementioned micro light-emitting diode chip packaging structure.

[0073] The present invention has at least the following beneficial effects:

[0074] (1) A micro LED chip is arranged on the first surface of a substrate, and a connector is arranged on the second surface of the substrate opposite to the first surface. A ceramic substrate with electrical connection channels and electrical connection pads is used, so that the micro LED chip and the connector are arranged in the vertical direction and electrically connected, thereby reducing the total surface area of ​​the package structure and reducing the electrical connection distance between the micro LED chip and the connector, and improving the response speed of the micro LED chip.

[0075] (2) The present invention constructs a molded body on a micro light-emitting diode chip through a molding process. The molded body is wire bonded for insulation protection, and has a window to expose the active area. The molded body also has a support notch for supporting a transparent protective layer, thereby protecting the active area. This structure has the advantages of simple structure and easy process implementation.

[0076] (3) By using a ceramic substrate and a gold finger connector, the present invention can easily achieve a firm fixation of the gold finger connector in the slit of the ceramic substrate (e.g., by interference fit, shape fit, force fit, etc.), eliminating the need for welding and bonding procedures. Moreover, ceramics are easy to mold, and the structure of their front and back sides is easy to form. Furthermore, ceramics have high hardness and good insulation, which can better protect the electrical circuits in the substrate and the micro LED chips arranged on it. Attached Figure Description

[0077] To further illustrate the advantages and other features of the various embodiments of the present invention, a more specific description of the embodiments of the present invention will be presented with reference to the accompanying drawings. It is understood that these drawings depict only typical embodiments of the invention and are therefore not intended to limit its scope. In the drawings, identical or corresponding parts will be indicated by the same or similar reference numerals for clarity.

[0078] Figure 1 A schematic diagram of a micro light-emitting diode chip package structure according to the first embodiment of the present invention is shown.

[0079] Figure 2 A schematic diagram of a micro light-emitting diode chip package structure is shown in the second embodiment of the present invention.

[0080] Figure 3 A schematic diagram of a micro light-emitting diode chip package structure according to a third embodiment of the present invention is shown.

[0081] Figure 4 A schematic diagram of a micro light-emitting diode chip package structure according to the fourth embodiment of the present invention is shown.

[0082] Figure 5A and Figure 5B A schematic diagram of the micro light-emitting diode chip packaging structure in the fifth embodiment of the present invention is shown.

[0083] Figures 6A to 6D A schematic diagram of the micro light-emitting diode chip packaging structure in the sixth embodiment of the present invention is shown.

[0084] Figure 7 A schematic diagram and optical path diagram of the light source machine according to the present invention are shown.

[0085] Figures 8A-8C An optical path diagram of the light source machine according to the present invention is shown.

[0086] Figure 9 A first embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown.

[0087] Figure 10 A second embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown.

[0088] Figure 11 A third embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown. Detailed Implementation

[0089] It should be noted that the components in the various figures may be shown exaggeratedly for illustrative purposes and are not necessarily to scale. In each figure, the same reference numerals are used for components that are identical or have the same function.

[0090] In this invention, unless otherwise specified, "arranged on," "arranged above," and "arranged on" do not exclude the possibility of an intermediate element between them. Furthermore, "arranged on or above" merely indicates the relative positional relationship between two components, and in certain cases, such as when the product orientation is reversed, it can also be converted to "arranged below or under," and vice versa.

[0091] In this invention, the various embodiments are merely intended to illustrate the solutions of the invention and should not be construed as limiting.

[0092] In this invention, unless otherwise specified, the quantifiers “a” and “one” do not exclude scenarios involving multiple elements.

[0093] It should also be noted that, in the embodiments of the present invention, only a portion of the components or parts may be shown for clarity and simplicity. However, those skilled in the art will understand that, under the teachings of the present invention, necessary components or parts can be added as needed for specific scenarios. Furthermore, unless otherwise stated, features in different embodiments of the present invention can be combined with each other. For example, a feature in the second embodiment can replace a corresponding or functionally identical or similar feature in the first embodiment, and the resulting embodiment will also fall within the scope of disclosure or description of this application.

[0094] It should also be noted that, within the scope of this invention, the terms "same," "equal," and "equal to" do not imply that the two values ​​are absolutely equal, but rather allow for a certain reasonable margin of error. In other words, the terms also encompass "substantially the same," "substantially equal," and "substantially equal to." Similarly, in this invention, the directional terms "perpendicular to," "parallel to," etc., also encompass the meanings of "substantially perpendicular to" and "substantially parallel to."

[0095] Furthermore, the numbering of the steps in the methods of the present invention does not limit the execution order of the method steps. Unless otherwise specified, the method steps may be executed in different orders.

[0096] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0097] Figure 1 A schematic diagram of a micro light-emitting diode chip package structure according to a first embodiment of the present invention is shown. Figure 1 As shown, the structure includes a substrate 101, a micro light-emitting diode chip 102, a connector 103, a chip adhesive 104, a wire bonding 105, a molded body 106, a light-transmitting protective layer 107, and a protective layer adhesive 108.

[0098] In some embodiments, a recess is provided on a first surface of the substrate 101 for accommodating the micro-LED chip 102. In some embodiments, the shape of the recess is square, circular, rectangular, polygonal, or other irregular shape. In some embodiments, the size of the recess matches the size of the micro-LED chip, and the depth of the recess is 20 micrometers to 300 micrometers.

[0099] In some embodiments, the substrate 101 has an internal electrical connection channel and an external electrical connection pad on its surface. In some embodiments, the thickness of the substrate 101 is greater than or equal to 100 mm. In some embodiments, the substrate 101 is a ceramic substrate.

[0100] In some embodiments, the micro-LED chip 102 is disposed in a recess on the substrate 101. A first surface of the micro-LED chip 102 is connected to the substrate 101, and an active region 1021 is provided on a second surface of the micro-LED chip 102 opposite to the first surface. In some embodiments, a first portion of the micro-LED chip 102 is located within the recess, and a second portion of the micro-LED chip 102 extends beyond the recess and is located outside the recess.

[0101] In some embodiments, the shape and size of the micro-LED chip 102 correspond to the shape and size of the recess. In some embodiments, the shape of the micro-LED chip 102 is square, circular, or other optional shapes. In some embodiments, the size of the micro-LED chip 102 does not exceed 1 cm, preferably not exceeding 20 micrometers. The micro-LED structure is formed in an array within the micro-LED chip 102, with a resolution such as 720*480, 640*480, 1920*1080, 1280*720, 2K, or 4K. The diameter of the micro-LED structure is in the nanometer range, for example, 20 nm to 100 nm.

[0102] The micro LED chip 102 includes an integrated circuit (IC) backplane and an active region 1021 disposed on the IC backplane. The active region 1021 includes a micro LED array, which includes a plurality of micro LEDs. Each micro LED can form at least a portion of a pixel element on the micro LED chip 102.

[0103] In some embodiments, the IC backplane may be electrically connected to each microLED in the microLED array via individual metal interconnects. In some embodiments, each microLED may be electrically controlled individually by the IC backplane. In some embodiments, the IC backplane may be electrically connected to the electrodes of the microLED chip 102 via metal interconnects. In some embodiments, a dielectric layer may be formed in the gaps between the microLEDs. In some embodiments, a dielectric layer may also be formed in the gaps between interconnects.

[0104] In some embodiments, each micro-LED in the micro-LED array may include a micrometer-scale mesa structure. In some embodiments, the micrometer-scale mesa structure may include, from bottom to top, a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer. That is, in the three-layer structure, the first type epitaxial layer is closest to the IC backplane; the light-emitting layer is located above the first type epitaxial layer and further away from the IC backplane; and the second type epitaxial layer is located above the light-emitting layer and furthest away from the IC backplane. In some embodiments, the light-emitting layer is formed of multiple stacked quantum well layers, particularly superlattice stacked quantum well layers. Preferably, the superlattice stacked quantum well layers include multiple pairs of quantum well layers stacked with quantum barrier layers. In some embodiments, the first type epitaxial layer is a semiconductor material having a first conductivity type and includes multiple semiconductor layers. The main substrate material of the first type epitaxial layer may be, but is not limited to, materials such as Ga, N, As, P, In, or Al. Furthermore, the first type epitaxial layer may include, from top to bottom, a waveguide layer, a confinement layer, a transition layer, and a window layer; additionally, an ohmic contact layer may be formed below the window layer. In some embodiments, the second epitaxial layer is a semiconductor material having a second conductivity type and includes multiple semiconductor layers. The main substrate material of the second epitaxial layer may be, but is not limited to, materials such as Ga, N, As, P, In, or Al. Furthermore, the first epitaxial layer may include, from top to bottom, a confinement layer and a waveguide layer; additionally, in some embodiments, an ohmic contact layer may be formed on the confinement layer.

[0105] In some embodiments, a top conductive layer may be formed on the top surface of the micro-LED array. In some embodiments, the top conductive layer may be shared by all micro-LEDs in the micro-LED array. In some embodiments, the light-emitting layer may include at least one quantum well layer. In some embodiments, the micro-LED array may include a single-layer micro-LED structure. In some embodiments, the micro-LED array may include a multi-layer vertically stacked micro-LED structure.

[0106] In some embodiments, the micro-LED array may include blue micro-LEDs. In some embodiments, the spacing between the micro-LED arrays, i.e., the minimum center-to-center distance between the micro-LEDs, may be between about 2 micrometers and about 50 micrometers. In some embodiments, the number of pixels on the micro-LED chip 102 may be between thousands and millions.

[0107] In some embodiments, the connector 103 is disposed on a second surface of the substrate 101 opposite to the first surface, wherein the connector 103 is connected to an electrical connection channel inside the substrate 101. In some embodiments, the connector 103 is disposed below the micro LED chip 102. In some embodiments, the connector 103 may extend to an electrical connection component for electrical expansion, the electrical connection component including a gold finger, metal contact, pin, or metal strip.

[0108] In some embodiments, a chip adhesive 104 is provided between the substrate 101 and the micro LED chip 102, wherein the substrate 101 and the micro LED chip 102 are bonded together by the chip adhesive 104. In some embodiments, the material of the chip adhesive 104 may be conductive adhesive or die bond film (DAF). The conductive adhesive may be silver paste or other metal pastes with low conductivity (e.g., gold, copper, nickel, etc.). The chip adhesive has excellent bonding performance and thermal conductivity, and can remain stable in high-temperature environments, providing reliable mechanical connection and thermal management for the chip.

[0109] In some embodiments, the wire bonding 105 electrically connects the electrical connection pads on the surface of the substrate 101 to the micro-LED chip 102. In some embodiments, the edge region of the micro-LED chip 102 is provided with a plurality of input / output ports, wherein the wire bonding 105 electrically connects the substrate 101 to the plurality of input / output ports. Here, the term "edge region" refers to a region with a physical boundary distance of 20 micrometers to 400 micrometers from the micro-LED chip.

[0110] In some embodiments, the micro LED chip 102 is square in shape, and the plurality of input / output ports are arranged on a first side and a second side opposite to the first side of the micro LED chip 102. The bonding wires 105 are arranged on the first side and the second side opposite to the first side of the micro LED chip 102 to electrically connect the input / output ports to the substrate 101. In some embodiments, the bonding wires 105 are gold wires, aluminum wires, or other conductive metal materials.

[0111] In some embodiments, the molded body 106 is disposed on the micro LED chip 102, wherein the molded body 106 has a window to expose the active region 1021 of the micro LED chip 102.

[0112] In some embodiments, the molded body 106 is constructed by a molding process, wherein a support notch is formed on the molded body 106 for supporting the light-transmitting protective layer 107. In some embodiments, the width of the support notch is 120 micrometers to 150 micrometers, and the depth of the support notch is 70 micrometers to 300 micrometers.

[0113] In some embodiments, a first portion of the molded body 106 is disposed on the micro light-emitting diode chip 102, and a second portion of the molded body 106 is disposed on the substrate 101.

[0114] In some embodiments, the molded body 106 covers the bonding wire 105 to provide insulation protection for the bonding wire 105. In some embodiments, the material of the molded body 106 includes epoxy resin, silicone resin, ethylene-vinyl acetate copolymer, and polyimide (EVA glue), preferably epoxy resin, silicone, or ethylene-vinyl acetate copolymer.

[0115] In some embodiments, the light-transmitting protective layer 107 is disposed on the micro-LED chip 102, wherein the light-transmitting protective layer 107 is used to protect the active region 1021 on the micro-LED chip 102. In some embodiments, a gap is left between the light-transmitting protective layer 107 and the active region 1021 to prevent the light-transmitting protective layer 107 from contacting the surface of the active region 1021.

[0116] In some embodiments, the material of the light-transmitting protective layer 107 includes light-transmitting materials such as quartz glass, silicate glass, soda-lime glass, fluoride glass, plexiglass, and sapphire, and preferably glass, silicon dioxide, or magnesium fluoride.

[0117] In some embodiments, the protective layer adhesive 108 is disposed at a support step on the molded body 106, wherein the light-transmitting protective layer 107 is bonded and fixed to the support step by the protective layer adhesive 108. In some embodiments, the material of the protective layer adhesive 108 may be an ethylene-vinyl acetate copolymer. Optionally, the protective layer adhesive 108 has a plurality of support particles inside, wherein the support particles, when mixed with the protective layer adhesive 108, form a support structure. In some embodiments, the particle size of the support particles is 5 micrometers to 10 micrometers. In some embodiments, the material of the support particles includes silica, epoxy resin, and other optional plastics.

[0118] Figure 2 A schematic diagram of a micro light-emitting diode chip package structure according to a second embodiment of the present invention is shown. Figure 2As shown, the structure includes a substrate 101, a micro LED chip 102, a connector 103, a chip adhesive 104, wire bonding 105, and a molded body 106. This structure is largely the same as the packaging structure in the first embodiment, and will not be described in detail here. The difference between the second embodiment and the first embodiment is that the light-transmitting protective layer 107 and the protective layer adhesive 104 are omitted. Correspondingly, the support notch on the molded body 105 is also omitted.

[0119] Figure 3 A schematic diagram of a micro light-emitting diode chip package structure according to a third embodiment of the present invention is shown. Figure 3 As shown, the structure includes a substrate 101, a micro LED chip 102, a connector 103, a chip adhesive 104, a wire bonding assembly 105, a molded body 106, a light-transmitting protective layer 107, and a protective layer adhesive 108. This structure is largely the same as the packaging structure in the first embodiment, and will not be described in detail here. The difference between the third embodiment and the first embodiment is that the recess on the first surface of the substrate 101 is eliminated, and the micro LED chip 102 is directly disposed on the first surface of the substrate 101.

[0120] Figure 4 A schematic diagram of a micro light-emitting diode chip package structure according to a fourth embodiment of the present invention is shown. Figure 4 As shown, the structure includes a substrate 101, a micro LED chip 102, a connector 103, a chip adhesive 104, wire bonding 105, and a molded body 106. This structure is largely the same as the packaging structure in the third embodiment, and will not be described in detail here. The difference between the fourth embodiment and the third embodiment is that the light-transmitting protective layer 107 and the protective layer adhesive 104 are omitted. Correspondingly, the support notch on the molded body 105 is also omitted.

[0121] Figure 5A and Figure 5B A schematic diagram of the micro light-emitting diode chip package structure according to the fifth embodiment of the present invention is shown. Figure 5A and Figure 5B As shown, the structure includes a substrate 101, a micro light-emitting diode chip 102, a connector 103, a chip adhesive 104, a wire bonding 105, a molded body 106, a light-transmitting protective layer 107, a protective layer adhesive 108, and a memory chip 109, wherein the light-transmitting protective layer 107 and the protective layer adhesive 108 are optional components.

[0122] The fifth embodiment is largely the same in structure as the first or second embodiment, and will not be described again here. The difference between the fifth embodiment and the first or second embodiment is that the memory chip 109 is disposed on the first surface of the substrate 101, and the micro light-emitting diode chip 102 is disposed on the memory chip 109, and the wire bonding 105 electrically connects the memory chip 109 and the micro light-emitting diode chip 102 to the substrate 101.

[0123] In some embodiments, the wire bonding 105 electrically connects the memory chip 109 and the micro light-emitting diode chip 102 to the electrical connection pads of the substrate 101, and electrically connects the memory chip 109 and the micro light-emitting diode chip 102 to the electrical connection channels of the substrate 101 through the electrical connection pads.

[0124] In some embodiments, the bonding wire 105 is arranged on the side of the memory chip 109 and the micro light-emitting diode chip 102.

[0125] In some embodiments, the edge regions of the memory chip 109 and the micro LED chip 102 are provided with a plurality of input / output ports, wherein the bonding wire 105 electrically connects the substrate 101 to the plurality of input / output ports.

[0126] In some embodiments, the memory chip 109 and the micro LED chip 102 are square in shape, wherein the plurality of input / output ports are arranged on a first side of the memory chip 109 and a second side opposite to the first side, and the wire bonding is arranged on the first side of the memory chip 109 and the second side opposite to the first side to electrically connect the substrate to the plurality of input / output ports.

[0127] In some embodiments, the memory chip 109 may be one or more layers, and the size of the memory chip 109 may be larger than the size of the micro light-emitting diode chip 102. In some embodiments, the shape of the memory chip 109 may be square, circular, rectangular, polygonal, or irregular.

[0128] Figures 6A to 6DA schematic diagram of a micro LED chip packaging structure according to a sixth embodiment of the present invention is shown. This structure includes a substrate 101, a micro LED chip 102, a connector 103, a chip adhesive 104, wire bonding 105, a molded body 106, a light-transmitting protective layer 107, a protective layer adhesive 108, and a memory chip 109, wherein the light-transmitting protective layer 107 and the protective layer adhesive 108 are optional components. The sixth embodiment is largely the same as the fifth embodiment in terms of structure, and will not be described in detail here. The difference between the sixth and fifth embodiments is that the micro LED chip 102 and the memory chip 109 have through-silicon vias 110 inside to replace the wire bonding 105 for electrical connection.

[0129] In some embodiments, the micro LED chip 102 has a through-silicon via (TSV) 110 inside, wherein the micro LED chip 102 and the memory chip 109 are electrically connected in the vertical direction through the TSV 110. In some embodiments, the TSV 110 includes a first via and a first via contact. The first via is disposed inside the micro LED chip 102 and connects a first surface of the micro LED chip to a second surface opposite to the first surface. The first via contact is disposed on the first surface of the micro LED chip 102, and the first via is filled with a conductive material. The first via contact is connected to the first via and is used for electrical contact between the micro LED chip 102 and the memory chip 109. In some embodiments, the diameter of the TSV 110 is 20 to 30 micrometers, and the aspect ratio of the TSV 110 is 10:1. In some embodiments, the interior of the first TSV and / or the second TSV is filled with a conductive metal, wherein the conductive metal may be gold or copper.

[0130] In some embodiments, a through-silicon via (TSV) 110 is also provided inside the memory chip 109, wherein the memory chip 109 is electrically connected to the substrate 101 through the TSV 110, or the multiple layers of memory chips 100 are electrically connected through the TSV 110, thereby eliminating the need for wire bonding 105.

[0131] Figure 7 A schematic diagram of a light source 700 according to the present invention is shown.

[0132] like Figure 7 As shown, the light source 700 according to the present invention has the following components:

[0133] • Encapsulation composites 702A-702C are attached to the light source body 706 by adhesive 103, wherein the encapsulation composites 702A-702C include light-emitting panels 701A-701C, and the light-emitting panels 701A-701C include:

[0134] The first light-emitting panel 701A is configured to emit a first color of light. The first color of light is, for example, monochromatic light, such as red light. It should be noted that this is merely exemplary, and other light-emitting panels emitting monochromatic or mixed light are conceivable under the teachings of this invention.

[0135] The second light-emitting panel 701B is configured to emit a second color of light. This second color of light is, for example, monochromatic light, such as green light. It should be noted that this is merely exemplary, and other monochromatic or mixed-color light-emitting panels are conceivable under the teachings of this invention.

[0136] The third light-emitting panel 701C is configured to emit a third color of light. This third color of light is, for example, monochromatic light, such as blue light. It should be noted that this is merely exemplary, and other monochromatic or mixed-color light-emitting panels are conceivable under the teachings of this invention.

[0137] Here, the brightness and / or chromaticity of the light source can be adjusted by adjusting the brightness of the first to third light-emitting panels 701A-701C. For example, a luminous intensity of 3 (red):6 (green):1 (blue) can be selected, and then these lights can be mixed to generate white light. The formation of other colors of light is also conceivable. The luminous intensity of the light-emitting panels 701A-701C can be adjusted by lighting up the corresponding number of micro-light-emitting diodes in each light-emitting panel 701A-701C or by adjusting the brightness of each micro-light-emitting diode.

[0138] Depending on the application, the encapsulation composite 702A-702C may also include components such as a molding compound, a flexible circuit board, and a substrate. For specific implementation details, please refer to [link to relevant documentation]. Figure 9-11 And its description.

[0139] • The light source body 706 has:

[0140] The first optical waveguide 704A is configured to couple the first color light emitted by the first light-emitting panel 701A into the fourth optical waveguide 704D.

[0141] The second optical waveguide 704B is configured to couple the second color light emitted by the second light-emitting panel 701B into the fourth optical waveguide 704D.

[0142] The third optical waveguide 704C is configured to couple the third-color light emitted by the third light-emitting panel 701C to the fourth optical waveguide 704D; and

[0143] The fourth optical waveguide 704D is configured to couple the first to third color light into the lens 705.

[0144] The first to fourth optical waveguides 704A-704D can be optical fibers or other light-guiding materials. For example, the first to fourth optical waveguides 704A-704D can include: silica glass optical fiber (mainly SiO2), composite optical fiber (mainly oxides such as SiO2, Na2O, and CaO), silicate optical fiber, fluoride optical fiber, plastic-clad optical fiber, all-plastic optical fiber, liquid-core optical fiber, etc. Optical coupling input from the first to third optical waveguides 704A-704C to the fourth optical waveguide 704D can be achieved, for example, through fiber optic connectors. They can be connected to a common fiber optic connector, and their outputs can be connected to the fourth optical waveguide 704D to achieve fiber optic signal combining. Alternatively, the fiber optic connector can be omitted, and optical coupling input can be achieved by placing a narrowband reflective film at the fiber interface. For information on optical waveguides 704A-704D and their optical paths, see [link to relevant documentation]. Figures 8A-8C And its description. Alternatively, it can be specified that the refractive indices of the first optical waveguide 704A and the third optical waveguide 704C are greater than the refractive index of the second optical waveguide 704B, and the refractive indices of the first optical waveguide 704A and the third optical waveguide 704C are less than the refractive index of the fourth optical waveguide 704D. In this way, transmission occurs when light enters the material with a lower refractive index from the material with a higher refractive index, and reflection occurs when light enters the material with a lower refractive index from the material with a lower refractive index (the angle of incidence is greater than the critical angle). The critical angle can be reduced by setting a large difference in refractive indices between the materials.

[0145] Lens 705 is configured to output light input to the fourth waveguide 704D as output light. Lens 705 can be configured to guide, shape, or simply transmit the output light. For example, lens 705 can focus the output light to form a point light source, collimate it to form parallel light, or simply transmit or filter it.

[0146] Figures 8A-8C An optical path diagram of the light source machine according to the present invention is shown, wherein Figure 8A The optical path of light input from the first light-emitting panel 701A to the first optical waveguide 704A is shown. Figure 8B The optical path of light input from the second light-emitting panel 701B to the second optical waveguide 704B is shown, and Figure 8C The optical path of light input from the third light-emitting panel 701C to the third optical waveguide 704C is shown.

[0147] like Figures 8A-8C As shown, each of the first to third optical waveguides 704A-704C includes:

[0148] • A columnar portion 707 has a flat bottom surface that is larger than the light-emitting surface of the light-emitting panel to couple the light emitted therefrom. The columnar portion 707 is, for example, cylindrical, with a circular bottom surface that is exactly the circumcircle of the square light-emitting window of the light-emitting panel. The cross-section of the columnar portion 707 can also be elliptical or other shapes, as long as its area is larger than the area of ​​the light-emitting window.

[0149] A wedge-shaped portion, having a wedge angle and inclined surfaces 708 and 709, wherein the inclined surfaces of adjacent optical waveguides coincide with each other. The wedge angle is, for example, 90° and is formed by two inclined surfaces 708 and 709. Here, the outer surfaces of the two inclined surfaces of the second optical waveguide 704B located in the middle are coated with a narrow-band reflective film, and the inclined surfaces 709 of the first and third optical waveguides 704A and 704C near the fourth optical waveguide are coated with a narrow-band reflective film. This narrow-band reflective film is configured to transmit light incident from its first side (e.g., the inner side or the side facing the light-emitting panel) and reflect light incident from its second side (the outer side, or the side facing away from the light-emitting panel), i.e., transmit light of a certain wavelength and reflect light of other wavelengths. The narrow-band reflective film can be, for example, a material with selective transmission characteristics for specific wavelengths of light and reflective characteristics for other wavelengths (e.g., a metal oxide coating such as indium tin oxide (ITO)) to achieve a unidirectional light transmission effect. Furthermore, the transmittance of light to specific wavelengths can be controlled by adjusting the thickness and composition of the coating. For example, the upper slope of the first optical waveguide can be coated with a coating that is transmissive to the first color of light and reflective to other colors of light (such as the second and third colors), and the two slopes of the second optical waveguide can be coated with a coating that is transmissive to the second color of light and reflective to other colors of light (such as the first and third colors). The upper slope of the third optical waveguide can be coated with a coating that is transmissive to the third color of light and reflective to other colors of light (such as the first and second colors). The lower slopes of the first and third optical waveguides can be left uncoated. In this way, the combined optical coupling output of the three colors of light can be achieved.

[0150] Alternatively or additionally, it can be specified that the refractive indices of the first optical waveguide 704A and the third optical waveguide 704C are greater than the refractive index of the second optical waveguide 704B, and that the refractive indices of the first optical waveguide 704A and the third optical waveguide 704C are less than the refractive index of the fourth optical waveguide 704D. In this way, transmission occurs when light enters the material with a lower refractive index from the material with a higher refractive index, and reflection or total internal reflection occurs when light enters the material with a lower refractive index from the material with a lower refractive index (the angle of incidence is greater than the critical angle). The critical angle can be reduced by setting a larger difference in refractive indices between the materials.

[0151] Similarly, the fourth optical waveguide 704D includes:

[0152] • Input wedge section, which has a wedge angle and an inclined surface, wherein the inclined surface of the fourth optical waveguide coincides with that of the adjacent optical waveguide.

[0153] • Output wedge section, which has a wedge angle and an inclined surface. The fourth optical waveguide 704D has a similar shape to the first to third optical waveguides, for example, it is also cylindrical.

[0154] The optical path in each optical waveguide is described below.

[0155] like Figure 8A As shown, light A originates from the second light-emitting panel 701B in the second optical waveguide 704B. It propagates through the columnar portion of the second optical waveguide 704B and is transmitted into the first and third optical waveguides 704A and 704C when it reaches the top inclined surface. This is because the inclined surface is equipped with a narrow-band reflective film, or the refractive index of the second optical waveguide 704B is less than that of the first and third optical waveguides 704A and 704C, allowing light A to directly transmit into them. In the first and third optical waveguides 704A and 704C, light A continues to propagate until it passes through the upper inclined surface of the first and third optical waveguides 704A and 704C and enters the fourth optical waveguide 704D. This is because these two inclined surfaces are equipped with narrow-band reflective films, or the refractive index of the first and third optical waveguides 704A and 704C is less than that of the fourth optical waveguide 704D, allowing light A to directly transmit into the fourth optical waveguide 704D. After propagating in the fourth optical waveguide 704D, light A finally enters the lens and is output.

[0156] like Figure 8B As shown, light B originates from the first light-emitting panel 701A in the first optical waveguide 704A. It propagates through the columnar portion of the first optical waveguide 704A to the upper inclined surface at the top, where it is transmitted into the fourth optical waveguide 704D. It is then reflected at the lower inclined surface and passes upwards through the upper inclined surface before being transmitted into the fourth optical waveguide 704D. This is because the upper inclined surface is equipped with a narrow-band reflective film, while the lower inclined surface is the back side of the narrow-band reflective film of the second optical waveguide 704B, making it reflective. Alternatively, the refractive index of the first optical waveguide 704A is less than that of the fourth optical waveguide 704D but greater than that of the second optical waveguide 704B, allowing light B to directly transmit into the fourth optical waveguide 704D at the upper inclined surface, while being reflected at the lower inclined surface and propagating upwards to the upper inclined surface before being transmitted into the fourth optical waveguide 704D. After propagating in the fourth optical waveguide 704D, light B finally enters the lens and is output.

[0157] like Figure 8C As shown, similar to Figure 8BLight C in the third waveguide 704C originates from the third light-emitting panel 701C, propagates through the columnar portion of the third waveguide 704C, and is transmitted into the fourth waveguide 704D at the upper inclined surface. It is then reflected at the lower inclined surface and passes upwards through the upper inclined surface before being transmitted into the fourth waveguide 704D. This is because the upper inclined surface has a narrow-band reflective film, while the lower inclined surface is the back of the narrow-band reflective film of the second waveguide 704B, making it reflective. Alternatively, the refractive index of the third waveguide 704C is less than that of the fourth waveguide 704D but greater than that of the second waveguide 704B, allowing light B to directly transmit into the fourth waveguide 704D at the upper inclined surface, while being reflected at the lower inclined surface and propagating upwards to the upper inclined surface before being transmitted into the fourth waveguide 704D. After propagating in the fourth waveguide 704D, light B finally enters the lens and is output.

[0158] Finally, in the fourth optical waveguide 704D, the three colors of light from the three light-emitting panels 701A-701C are mixed with each other to generate mixed color light or a corresponding image, which is then shaped and / or filtered or / or transmitted through a lens before being output.

[0159] Figure 9 A first embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown.

[0160] like Figure 9 As shown, the encapsulation composite 800 is based on molding and includes the following components:

[0161] • Light-emitting panels 701A-701C. Light-emitting panels 701A-701C can be disposed on a substrate or a circuit board, and the circuit board can be disposed on the substrate or without a substrate. Light-emitting panels 701A-701C have a light-emitting surface or a light-emitting area, i.e., the area where the micro-LED array is located. This light-emitting surface should not be obstructed and should therefore be exposed by the molding compound.

[0162] A circuit board 803 is electrically connected to the light-emitting panels 701A-701C. Specifically, the circuit board 803 can be connected to the driving circuitry of the light-emitting panels 701A-701C to connect them to an external power supply or control source. The circuit board 803 may have connecting lines configured to connect the interface area of ​​the light-emitting panels to an external interface. The circuit board 803 may also have an external interface 804 configured to connect an external power supply and / or control signals to power and / or control the light-emitting panels 701A-701C. The external interface 804 can be a pin-type interface or a gold-finger type interface; other types of interfaces are also conceivable. The circuit board 803 is preferably a flexible printed circuit board, and the connecting lines are traces arranged on the flexible printed circuit board.

[0163] A molding compound 802 surrounds the light-emitting panels 701A-701C and exposes the light-emitting surface and interface area of ​​the light-emitting panels. The molding compound 802 has an adhesive application area 201 for bonding to the light source body via adhesive. The adhesive in the adhesive application area can be, for example, a transparent adhesive, or the adhesive can be left unapplied on the light-emitting surface of the light-emitting panel. The material of the molding compound 802 may include, for example, epoxy resin, silicone resin, and polyimide.

[0164] The beneficial effects of the molded encapsulation-based encapsulation composite according to the present invention are that the molded encapsulation can tightly encapsulate the light-emitting panel and its wire bonding together, thereby improving the mechanical strength of the encapsulation composite and reducing space occupation.

[0165] Figure 10 A second embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown.

[0166] like Figure 10 As shown, the packaging complex 900 is based on a flip-chip (FC) package and includes the following components:

[0167] • Substrate 907, which is used to support the light-emitting panels 701A-C. The substrate 907 can be a transparent substrate, such as a glass substrate, or it can be a substrate of other materials, such as GaAs, GaP, InP, SiC, ZnO, and sapphire substrates. In one embodiment of the present invention, the thickness of the substrate is approximately 700 micrometers.

[0168] • The light-emitting panel 701A-C is mounted on the substrate using a flip-chip configuration. Flip-chip means that its wiring extends downwards from the back and through conductors in the reinforcement or substrate to the contact 905. The advantage of flip-chip is that electrical connections are achieved via solder balls or through-hole contacts, eliminating the need for wire bonding and increasing the durability of the circuitry.

[0169] A reinforcing body 901 is disposed on a substrate 907 and surrounds the light-emitting panels 701A-C, exposing their light-emitting surfaces and contact portions electrically connected to the electrodes of the light-emitting panels 701A-C. The material of the reinforcing body may include, for example, epoxy resin, silicone resin, and polyimide.

[0170] • Flexible circuit board 903, the bottom of which is electrically connected to the contact portion via solder balls. Flexible circuit board 903 is also flip-chip packaged here, with its bottom electrically connected to contact 905, thus effectively avoiding wire bonding. The flexible circuit board 903 may also include contacts, such as gold fingers 904, for electrical connection to an external power supply or controller.

[0171] • Reinforcing part 906, which fixes the bottom of the flexible circuit board 903 to the reinforcing body 901 and the substrate 907.

[0172] The beneficial effect of the flip-chip-based packaging complex according to the present invention is that the electrical connection is achieved through solder balls or through-hole contacts, without the need for wire bonding, thus eliminating the need for wire bonding and increasing the durability of the circuit.

[0173] Figure 11 A third embodiment of the packaging method of the miniature light-emitting diode panel of the light source machine according to the present invention is shown.

[0174] like Figure 11 As shown, the encapsulation composite 1100 is based on a ceramic substrate and includes the following components:

[0175] • Ceramic substrate 1101, which is configured to carry light-emitting panels 701A-701C.

[0176] • Light-emitting panels 701A-701C are disposed on a ceramic substrate 1101, wherein the light-emitting surface 1108 of the light-emitting panels 701A-701C is exposed. The light-emitting panels 701A-701C are bonded to the glass substrate 1101 by adhesive 1109.

[0177] • A molding compound 1102 is configured to encapsulate the light-emitting panels 701A-701C and / or their leads 1105 and 1106 on a ceramic substrate 1101, wherein the molding compound 1102 has a window to expose the light-emitting surface 1108 of the light-emitting panels. The molding compound 1102 may be, for example, a gold wire protectant.

[0178] A glass baffle 1103 is disposed on the window of the molding compound 1102 and bonded to the molding compound by a glass adhesive 1110 to protect the light-emitting panels 701A-701C from external damage, while also having a light-transmitting function. The glass adhesive 1110 may contain solid particles, which can provide support for the glass baffle 1103 after the glass adhesive has cured.

[0179] • A memory chip 1104 is disposed between the ceramic substrate 1104 and the light-emitting panels 701A-701C. The memory chip 1104 may be used, for example, to store control programs or calibration programs for the light-emitting panels 701A-701C, or other programs or data used for debugging or controlling the light-emitting panels 701A-701C.

[0180] • The first lead 1105 includes a pair of leads configured to electrically connect the cathode and anode of the light-emitting panels 701A-701C to a first contact on the ceramic substrate 1101, wherein the first lead 1105 and the first contact are encapsulated in a molding compound 1102.

[0181] • The second lead 1106 includes a pair of leads configured to electrically connect the cathode and anode of the memory chips 701A-701C to a second contact on the ceramic substrate 1101, wherein the second lead 1106 and the second contact are encapsulated in a plastic package 1102.

[0182] Connector 1107 is disposed on the side of ceramic substrate 1101 facing away from light-emitting panels 701A-701C. Conductive lines are provided in ceramic substrate 1101, passing through the ceramic substrate to electrically connect the light-emitting panels to connector 1107. Connector 1107 includes, for example, gold fingers and pins.

[0183] The beneficial effects of the ceramic substrate-based encapsulation composite according to the present invention are that the ceramic substrate provides better bottom support and protection, and the glass baffle also provides better protection for the light-emitting panel. Furthermore, the connector is directly disposed on the back side of the ceramic substrate and uses an interface such as gold fingers, allowing direct connection to the circuit board without soldering or wire bonding.

[0184] Although various embodiments of the invention have been described above, it should be understood that they are presented by way of example only and not as limitations. It will be apparent to those skilled in the art that various combinations, modifications, and alterations can be made without departing from the spirit and scope of the invention. Therefore, the breadth and scope of the invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined solely by the appended claims and their equivalents.

Claims

1. A micro light-emitting diode chip packaging structure, characterized in that, include: substrate; A miniature light-emitting diode chip is disposed on the first surface of the substrate; as well as A connector is disposed on a second surface of the substrate opposite to the first surface.

2. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The connector is positioned below the micro LED chip.

3. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The substrate is a ceramic substrate, wherein the ceramic substrate has an internal electrical connection channel and an electrical connection pad on its first surface.

4. The micro light-emitting diode chip packaging structure according to claim 3, characterized in that, The first end of the connector is electrically connected to the electrical connection channel, and the second end of the connector is electrically connected to the electrical connection component.

5. The micro light-emitting diode chip packaging structure according to claim 3, characterized in that, The micro LED chip is electrically connected to the electrical connection channel via the electrical connection pads.

6. The micro light-emitting diode chip packaging structure according to claim 4, characterized in that, The electrical connection components include gold fingers, metal contacts, pins, or metal sheets.

7. The micro LED chip packaging structure with a back connector according to claim 4, characterized in that, The connector includes a circuit board and gold fingers coated on the circuit board.

8. The micro LED chip packaging structure with a rear connector according to claim 7, characterized in that, The ceramic substrate includes: A mounting seam, provided on the second surface, is for inserting the circuit board; and A contact portion is provided in the mounting seam for electrical contact with the gold fingers on the circuit board.

9. The micro LED chip packaging structure with a back connector according to claim 8, characterized in that, The circuit board is inserted into the mounting seam via an interference fit.

10. The micro LED chip packaging structure with a back connector according to claim 8, characterized in that, The circuit board is inserted into the mounting seam by form fit or force fit and is fixed in the mounting seam by adhesive.

11. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The first surface of the substrate has a recess, wherein the micro light-emitting diode chip is arranged in the recess.

12. The micro light-emitting diode chip packaging structure according to claim 11, characterized in that, The first portion of the micro LED chip is located within the recess, and the second portion of the micro LED chip extends beyond the recess and is located outside the recess.

13. The micro light-emitting diode chip packaging structure according to claim 11, characterized in that, The shape of the pit can be square, circular, rectangular, polygonal, or irregular.

14. The micro light-emitting diode chip packaging structure according to claim 11, characterized in that, The size of the recess is matched with the size of the micro LED chip, and the depth of the recess is 20 micrometers to 300 micrometers.

15. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The thickness of the substrate is greater than or equal to 100 mm.

16. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The first side of the micro LED chip is connected to the substrate, and an active region is provided on the second side of the micro LED chip opposite to the first side.

17. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The shape and size of the micro LED chip are matched with the shape and size of the recess.

18. The micro light-emitting diode chip packaging structure according to claim 17, characterized in that, The micro LED chip can be square, circular, rectangular, polygonal, or other irregular shapes.

19. The micro light-emitting diode chip packaging structure according to claim 16, characterized in that, Also includes: A molded body disposed on the micro light-emitting diode chip, wherein the molded body has a window to expose the active region.

20. The micro light-emitting diode chip packaging structure according to claim 19, characterized in that, The first part of the molded body is disposed on the micro light-emitting diode chip, and the second part of the molded body is disposed on the substrate.

21. The micro light-emitting diode chip packaging structure according to claim 19, characterized in that, The molded body is a wire bonding protective adhesive and covers the wire bonding.

22. The micro light-emitting diode chip packaging structure according to claim 19, characterized in that, The material of the molded body is selected from the group consisting of epoxy resin, silicone resin, ethylene-vinyl acetate copolymer, and polyimide.

23. The micro light-emitting diode chip packaging structure according to claim 19, characterized in that, Also includes: A light-transmitting protective layer is arranged on the window.

24. The micro light-emitting diode chip packaging structure according to claim 23, characterized in that, The window has a support notch for supporting the light-transmitting protective layer.

25. The micro light-emitting diode chip packaging structure according to claim 24, characterized in that, The width of the support notch is 120 to 150 micrometers, and the depth of the support notch is 70 to 300 micrometers.

26. The micro light-emitting diode chip packaging structure according to claim 23, characterized in that, There is a gap between the light-transmitting protective layer and the active region.

27. The micro light-emitting diode chip packaging structure according to claim 23, characterized in that, The material of the light-transmitting protective layer is selected from the group consisting of: quartz glass, silicate glass, soda-lime glass, fluoride glass, plexiglass, and sapphire.

28. The micro light-emitting diode chip packaging structure according to claim 23, characterized in that, Also includes: A protective layer adhesive is disposed at the support notch between the light-transmitting protective layer and the molded body, wherein the light-transmitting protective layer is bonded and fixed to the mold window by the protective layer adhesive.

29. The micro light-emitting diode chip packaging structure according to claim 28, characterized in that, The adhesive material for the protective layer includes: ethylene-vinyl acetate copolymer.

30. The micro light-emitting diode chip packaging structure according to claim 16, characterized in that, Also includes: A chip adhesive is disposed between the substrate and the micro LED chip to bond the micro LED chip to the substrate.

31. The micro light-emitting diode chip packaging structure according to claim 30, characterized in that, The material of the chip adhesive is selected from the group consisting of conductive adhesive, silver paste, or die bonding film.

32. The micro light-emitting diode chip packaging structure according to claim 3, characterized in that, Also includes: Wire bonding is performed on the side of the micro LED chip to electrically connect the micro LED chip to the electrical connection pads of the substrate.

33. The micro LED chip packaging structure according to claim 32, wherein the edge region of the micro LED chip is provided with a plurality of input / output ports, wherein the wire bonding electrically connects the electrical connection pads to the plurality of input / output ports.

34. The micro light-emitting diode chip packaging structure according to claim 33, characterized in that, The micro LED chip is square in shape, wherein the plurality of input / output ports are arranged on a first side and a second side opposite to the first side of the micro LED chip, and the wire bonding is arranged on the first side and the second side opposite to the first side of the micro LED chip to electrically connect the circuit board to the plurality of input / output ports.

35. The micro light-emitting diode chip packaging structure according to claim 32, characterized in that, The wire bonding material includes gold or aluminum.

36. The micro light-emitting diode chip packaging structure according to claim 32, characterized in that, The molded body is arranged on the punching line to cover the punching line.

37. The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The micro light-emitting diode chip includes a memory chip and a display chip, wherein the memory chip is disposed on a first surface of the substrate, and the display chip is disposed on the memory chip, wherein the memory chip and the display chip are electrically connected to the substrate by wire bonding.

38. The micro light-emitting diode chip packaging structure according to claim 37, characterized in that, The substrate is a ceramic substrate, wherein the interior of the ceramic substrate has electrical connection channels, and the surface of the ceramic substrate has electrical connection pads.

39. The micro light-emitting diode chip packaging structure according to claim 38, characterized in that, The wire bonding connects the memory chip and the display chip to the electrical connection pads, and the electrical connection pads connect the memory chip and the display chip to the electrical connection channel.

40. The micro light-emitting diode chip packaging structure according to claim 37, characterized in that, The wire bonding is arranged on the side of the memory chip and the display chip.

41. The multilayer micro light-emitting diode chip packaging structure based on wire bonding according to claim 40, wherein the edge regions of the memory chip and the display chip are provided with a plurality of input / output ports, wherein the wire bonding electrically connects the substrate to the plurality of input / output ports.

42. The micro light-emitting diode chip packaging structure according to claim 41, characterized in that, The memory chip and the display chip are square in shape, wherein the plurality of input / output ports are arranged on a first side of the memory chip and a second side opposite to the first side, and the wire bonding is arranged on the first side of the memory chip and the second side opposite to the first side to electrically connect the substrate to the plurality of input / output ports.

43. The micro light-emitting diode chip packaging structure according to claim 37, characterized in that, The memory chip may consist of one or more layers.

44. The micro light-emitting diode chip packaging structure according to claim 37, characterized in that, The size of the memory chip is larger than the size of the micro light-emitting diode chip.

45. The micro light-emitting diode chip packaging structure according to claim 37, characterized in that, The memory chip can be square, circular, rectangular, polygonal, or irregular in shape.

46. ​​The micro light-emitting diode chip packaging structure according to claim 1, characterized in that, The micro LED chip includes a memory chip and a display chip. The memory chip is disposed on a first surface of the substrate, and the display chip is disposed on the memory chip. The display chip has a first through-silicon via (TSV) inside, and the display chip and the memory chip are electrically connected through the first TSV.

47. The micro light-emitting diode chip packaging structure according to claim 46, characterized in that, The memory chip has a second through-silicon via (TSV) inside, and the memory chip is electrically connected to the substrate through the second TSV.

48. The micro light-emitting diode chip packaging structure according to claim 46, characterized in that, The first through-silicon via includes: A first through-hole, disposed inside the display chip and connecting a first surface of the display chip and a second surface opposite to the first surface, wherein the first through-hole is filled with a conductive material. A first through-hole contact is disposed on a first surface of the display chip, the first through-hole contact is connected to the first through-hole, wherein the first through-hole contact is used for electrical contact between the display chip and the memory chip.

49. The micro light-emitting diode chip packaging structure according to claim 47, characterized in that, The second through-silicon via includes: A second via is disposed inside the memory chip and connects a first surface of the memory chip to a second surface opposite to the first surface, wherein the second via is filled with a conductive material; and A second through-hole contact is disposed on a first surface of the memory chip, and the second through-hole contact is connected to the second through-hole, wherein the second through-hole contact is used for electrical contact between the memory chip and the substrate.

50. The micro light-emitting diode chip packaging structure according to any one of claims 46 to 49, characterized in that, The diameter of the first through-silicon via and / or the second through-silicon via is 20 to 30 micrometers.

51. The micro light-emitting diode chip packaging structure according to claim 50, characterized in that, The aspect ratio of the first through-silicon via and / or the second through-silicon via is 10:

1.

52. The micro light-emitting diode chip packaging structure according to claim 51, characterized in that, The interior of the first through-silicon via and / or the second through-silicon via is filled with conductive metal.

53. The micro light-emitting diode chip packaging structure according to claim 52, characterized in that, The conductive metal includes gold or copper.

54. The micro light-emitting diode chip packaging structure according to claim 49, characterized in that, The memory chip may consist of one or more layers.

55. The micro light-emitting diode chip packaging structure according to claim 54, characterized in that, The multilayer memory chips are electrically connected through the second through-silicon via, wherein the second through-silicon via contact is used for electrical contact between the multiple memory chips.

56. A light source machine, characterized in that, include: The micro light-emitting diode chip packaging structure according to any one of claims 1 to 55.

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