Quantum dot complex, quantum dot composition, light emitting element, and electronic device

Abstract

Disclosed is a quantum dot complex, a quantum dot composition, a light-emitting element, and an electronic device. The quantum dot complex comprises quantum dots and a ligand, wherein the ligand comprises a compound including an anchor portion and a tail portion, the anchor portion comprising a portion represented by any one of chemical formulas 1-1 to 1-5, and the tail portion comprising C... 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl or -NHC 18 -C 30 The alkenyl group, based on the total weight of the said content sub-dot complex, has a ligand content of less than 7.0 wt%.

Description

Technical Field

[0001] This invention relates to quantum dot composites, quantum dot compositions comprising the same, light-emitting elements comprising the same, and electronic devices comprising the same. Background Technology

[0002] Quantum dots, as nanocrystals of semiconductor materials, exhibit the quantum confinement effect. When a quantum dot receives light from an excitation source and reaches an excited state, it releases energy equivalent to its band gap. At this point, even with the same material, the wavelength varies depending on the particle size. Therefore, by adjusting the size of the quantum dots, light in the desired wavelength range can be obtained, exhibiting excellent color purity and high luminous efficiency, thus enabling applications in various components.

[0003] Furthermore, in optical components, quantum dots can be used as materials to perform various optical functions (e.g., light conversion). As nanoscale semiconductor nanocrystals, quantum dots can have different band gaps by controlling the size and composition of the nanocrystals, thereby emitting light of various wavelengths.

[0004] Optical components incorporating quantum dots as described above can have a thin-film morphology (e.g., a thin-film morphology patterned per sub-pixel). The optical components described above can also be used as color conversion components in devices comprising multiple light sources.

[0005] However, the quantum dots are easily oxidized by moisture and oxygen, which leads to a decrease in luminescence efficiency.

[0006] To address this issue, a scheme has been proposed to coordinate reactive ligands around quantum dots, with known examples of such ligands being conjugated ligands. However, there is still a need to improve the performance of light-emitting elements incorporating such ligands. Summary of the Invention

[0007] The purpose of this invention is to provide a quantum dot complex with improved charge injection characteristics by adjusting the ligand structure and content on the surface of quantum dots, a quantum dot composition including the same, a light-emitting element including the same, and an electronic device including the same.

[0008] According to one aspect, a content-containing sub-dot complex is provided.

[0009] As a quantum dot complex comprising quantum dots and ligands

[0010] The ligand includes a compound comprising an anchoring portion and a tail portion.

[0011] The anchoring portion includes a part represented by any one of the following chemical formulas 1-1 to 1-5:

[0012]

[0013] In chemical formulas 1-1 to 1-5, * indicates a site that binds to the tail.

[0014] The tail portion includes C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl or -NHC 18 -C 30 alkenyl,

[0015] Based on the total weight of the content sub-point complex, the content of the ligand is less than 7.0 wt%.

[0016] According to one implementation, the anchoring portion of the ligand can be connected to the surface of the quantum dot via covalent bonds, ionic bonds, or coordination bonds.

[0017] According to one implementation example, the tail portion may include C. 19 -C 30 alkenyl, -OC 18 -C 30 alkenyl or -NHC 18 -C 30 alkenyl, the C 19 -C 30 alkenyl, the -OC 18 -C 30 alkenyl groups and the -NHC group 18 -C 30 The double bonds included in an alkenyl group can include trans bonds.

[0018] According to one implementation example, the melting point of the ligand may be below 30°C.

[0019] According to one embodiment, the content sub-dot complex can be dispersed in a nonpolar solvent.

[0020] According to one implementation example, the ligand may include any one of the following compounds:

[0021]

[0022] According to one embodiment, the quantum dot may have a core-shell structure, the core-shell structure comprising: a core, including a semiconductor compound; and a shell, including an oxide of a metal, an oxide of a quasi-metal, or an oxide of a non-metal, a semiconductor compound, or a combination thereof.

[0023] According to one embodiment, the semiconductor compound may include: group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV compounds; or any combination thereof.

[0024] According to one embodiment, the oxide of the metal, the oxide of the metalloid, or the oxide of the nonmetal may independently include SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof.

[0025] According to one embodiment, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZn SeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, Al Sb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, In NSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InA lNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS 3. InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, AgInGaS2, CuInGaS2, SnS, SnSe, SnTe, PbS, PbS e, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, SiC, SiGe or any combination thereof.

[0026] According to one implementation example, the semiconductor compound included in the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0027] According to another aspect, a quantum dot composition is provided, comprising the above-mentioned quantum dot composite.

[0028] According to another aspect, a light-emitting element is provided, comprising: a first electrode; a second electrode facing the first electrode; and an intermediate layer disposed between the first electrode and the second electrode and including a light-emitting layer, wherein the intermediate layer comprises the content sub-dot composite as the light-emitting element.

[0029] According to one implementation example, the light-emitting layer may include the content sub-dot complex.

[0030] In one implementation example, the first electrode is the anode, and the second electrode is the cathode.

[0031] The intermediate layer may further include: a hole transport region disposed between the first electrode and the light-emitting layer and including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting auxiliary layer or any combination thereof; and / or an electron transport region disposed between the second electrode and the light-emitting layer and including a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof.

[0032] According to another aspect, an electronic device is provided, including the aforementioned light-emitting element.

[0033] According to one implementation example, the electronic device further includes a thin-film transistor.

[0034] The thin-film transistor includes a source electrode and a drain electrode.

[0035] The first electrode of the light-emitting element can be electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

[0036] According to one embodiment, the electronic device may further include a display module, a processor, a memory, and a power module.

[0037] According to one implementation example, the electronic device may include an image display electronic device, a wearable electronic device, or a vehicle electronic device.

[0038] According to one embodiment, the electronic device may be one of the following: smartphone, tablet PC, laptop computer, television (TV), desktop monitor, smart glasses, head-mounted display, smartwatch, car dashboard, center fascia, center information display (CID) arranged in the car dashboard, and room mirror display.

[0039] According to one embodiment, the charge injection characteristics of the content dot complex are excellent, and therefore the luminous efficiency of the light-emitting element using the content dot complex is excellent. Attached Figure Description

[0040] Figure 1 This is a diagram schematically illustrating the various structures of a light-emitting element according to an embodiment of the present invention.

[0041] Figure 2 This is a cross-sectional view of an electronic device according to an embodiment of the present invention.

[0042] Figure 3 This is a cross-sectional view of an electronic device according to another embodiment of the present invention.

[0043] Figure 4 This is a block diagram of an electronic device according to an embodiment of the present invention.

[0044] Figure 5 This is a schematic diagram illustrating an electronic device according to various embodiments of the present invention.

[0045] Explanation of reference numerals in the attached figures

[0046] 100: Light-emitting element; 110: First electrode

[0047] 130: Intermediate layer; 150: Second electrode Detailed Implementation

[0048] This invention can be modified in many ways and can have many embodiments, specific embodiments of which will be illustrated in the accompanying drawings for detailed description in the following description. The effects and features of the invention, as well as the methods for achieving these effects and features, will become clear with reference to the embodiments described in detail below, taken in conjunction with the accompanying drawings. However, the invention is not limited to the embodiments disclosed below, but can be implemented in many different forms.

[0049] In the following embodiments, unless explicitly stated in the context, singular expressions include plural expressions.

[0050] In the following embodiments, terms such as "comprising" or "having" indicate the presence of features or constituent elements described in the specification, rather than pre-excluding the possibility of adding more than one other feature or constituent element.

[0051] In the following embodiments, when referring to a membrane, region, constituent element, or other part being located above or on another part (membrane, region, constituent element), it includes not only the case where it is located immediately above the other part, but also the case where other membranes, regions, constituent elements, etc. are sandwiched between them.

[0052] When describing the invention with reference to the accompanying drawings, the same or corresponding constituent elements are given the same reference numerals, and repeated descriptions of them are omitted.

[0053] For ease of explanation, the dimensions of the constituent elements in the accompanying drawings may be exaggerated or reduced. For example, for ease of explanation, the dimensions and thicknesses of the various components shown in the figures are arbitrarily depicted, and therefore the invention is not necessarily limited to the contents illustrated.

[0054] [Content Sub-dot Complex]

[0055] In the prior art, in order to improve the electron injection of quantum dot complexes including quantum dots and ligands, it is known that the ligands have a conjugated structure, but the improvement is minimal.

[0056] According to one aspect, a content-containing sub-dot complex is provided.

[0057] As a quantum dot complex comprising quantum dots and ligands

[0058] The ligand includes a compound comprising an anchoring portion and a tail portion.

[0059] The anchoring part includes a portion (moiety) represented by any one of the following chemical formulas 1-1 to 1-5:

[0060]

[0061] In chemical formulas 1-1 to 1-5, * indicates a site that binds to the tail.

[0062] The tail portion includes C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl or -NHC 18 -C 30 alkenyl,

[0063] Based on the total weight of the content sub-point complex, the content of the ligand is less than 7.0 wt%.

[0064] For example, the ligand may be a compound consisting of the anchor portion and the tail portion.

[0065] The ligands present on the surface of quantum dots play a role in dispersing the quantum dots in the solvent. If the length of such ligands is short, the dispersibility in the solvent is poor; if the length of the ligands is long, the dispersibility in the solvent is relatively good.

[0066] In addition, when the amount of ligands present on the surface of the quantum dot is large, the charge injection characteristics may be poor.

[0067] The inventors of this invention have discovered that when the tail of the ligand of the content dot complex according to one embodiment has a tail length equivalent to more than 19 chain atoms (including carbon atoms, oxygen atoms and nitrogen atoms), it exhibits excellent dispersibility in a solvent.

[0068] Additionally, the tail portion of the ligand contains a value greater than C. 30 Alkyl groups or greater than C 30 In the case of alkenyl groups, the resistance increases, which may lead to poor charge injection characteristics.

[0069] The C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl groups and -NHC 18 -C 30 The alkenyl group can be unsubstituted or substituted.

[0070] The C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl groups and -NHC 18 -C 30 The alkenyl group can be unsubstituted or can be C6-C. 60 Aryl substitution. For example, the C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30alkenyl, -NHC 18 -C 30 Alkyl groups and -NHC 18 -C 30 The middle part of the alkenyl group can be C6-C 60 Aryl substitution. For example, the C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl groups and -NHC 18 -C 30 The terminal portion of the alkenyl group (i.e., the opposite end to the anchoring portion) may not be bound by C6-C. 60 Aryl substitution.

[0071] In addition, when the alkyl and alkenyl portions at the tail include N, O, etc., other than carbon, they may deviate from the expected polarity.

[0072] The inventors of this invention have discovered that, based on the total weight of the content of the dot matrix complex, when the content of the ligand in the dot matrix complex according to one embodiment is 7.0 wt% or less, the charge injection characteristics are excellent, and therefore the luminous efficiency of light-emitting elements including the ligand of the dot matrix complex is excellent.

[0073] The content of the ligands is a value measured by a thermogravimetric analyzer (TGA).

[0074] According to one implementation example, the content of the ligand can be from 5.0 wt% to 7.0 wt%, based on the total weight of the content sub-dot complex.

[0075] When the content of the ligand is less than 5.0 wt%, the solvent dispersibility may be poor, and thus the luminous efficiency of the light-emitting element including the ligand may be poor.

[0076] When the content of the ligand is greater than 7.0 wt%, the charge injection characteristics may be poor, and thus the luminous efficiency of light-emitting elements including the ligand may be poor.

[0077] According to one implementation example, the anchoring portion of the ligand can be connected to the surface of the quantum dot via covalent bonds, ionic bonds, or coordination bonds.

[0078] In addition to the portion represented by any one of chemical formulas 1-1 to 1-5, the anchoring portion may also include a metal. For example, the metal may be Zn. For example, the anchoring portion may be in the form of zinc carboxylate or zinc carbamate.

[0079] According to one implementation example, the tail portion may include C. 19 -C 30 alkenyl, -OC 18 -C 30 alkenyl or -NHC 18 -C 30 alkenyl, the C 19 -C 30 alkenyl, -OC 18 -C 30 alkenyl and -NHC 18 -C 30 The double bonds included in an alkenyl group can include trans bonds.

[0080] For example, the C 19 -C 30 alkenyl, -OC 18- C 30 alkenyl and -NHC 18 -C 30 The double bonds in an alkenyl group can all be trans bonds.

[0081] According to one implementation example, the melting point of the ligand can be below 30°C. In the case of the anchoring portion and the tail portion as described above, the melting point of the ligand comprising them can be below 30°C.

[0082] According to one embodiment, the content sub-dot complex can be dispersed in a nonpolar solvent. The nonpolar solvent may, for example, include C1-C24. 60 Alkanes (e.g., n-hexane), alkylbenzenes (e.g., toluene, xylene), or any combination thereof. The alkyl group of the alkylbenzene may be C1-C6. 60 alkyl.

[0083] According to one implementation example, the ligand may include any one of the following compounds:

[0084]

[0085] The melting points (mp) of ligand compounds 1 to 6 are 24°C, 30°C, 30°C, 28°C, -45°C, and -53°C, respectively.

[0086] The quantum dot will be described later.

[0087] According to another aspect, a quantum dot composition comprising the said quantum dot complex is provided.

[0088] According to one embodiment, the viscosity (@25°C) of the quantum dot composition can be from 5 cP to 80 cP. When the viscosity of the composition is within this range, the quantum dot composition is suitable for solution processes (e.g., inkjet printing). If desired, the quantum dot composition may also include a dispersant, for example. The dispersant may include common anionic surfactants, cationic surfactants, and nonionic polymers.

[0089] According to one embodiment, the viscosity (@25°C) of the quantum dot composition can be from 2 cP to 30 cP.

[0090] When the viscosity is within the specified range, there is no difficulty in forming a layer using the quantum dot composition according to an embodiment of the invention via a solution process (e.g., spin coating or inkjet printing).

[0091]

【right Figure 1 [Explanation]

[0092] Figure 1 This is a schematic cross-sectional view of a light-emitting element 100 according to an embodiment of the present invention. The light-emitting element 100 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0093] The following will refer to Figure 1 The structure and manufacturing method of a light-emitting element 100 according to an embodiment of the present invention will be described below.

[0094]

First Electrode 110

[0095] exist Figure 1 A substrate may be additionally disposed on the lower part of the first electrode 110 or the upper part of the second electrode 150. A glass substrate or a plastic substrate may be used as the substrate. Alternatively, the substrate may be a flexible substrate, for example, comprising plastics with excellent heat resistance and durability such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0096] The first electrode 110 can be formed, for example, by providing a first electrode material on the substrate using a deposition or sputtering method. When the first electrode 110 is an anode, a high work function material capable of easily injecting holes can be used as the first electrode material.

[0097] The first electrode 110 can be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. To form the first electrode 110 as a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof can be used as the material for the first electrode. Alternatively, to form the first electrode 110 as a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof can be used as the material for the first electrode.

[0098] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure comprising multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0099] [Middle Layer 130]

[0100] An intermediate layer 130 may be disposed on the upper part of the first electrode 110. The intermediate layer 130 includes a light-emitting layer.

[0101] The intermediate layer 130 may further include a hole transport region disposed between the first electrode 110 and the light-emitting layer and an electron transport region disposed between the light-emitting layer and the second electrode 150.

[0102] In addition to various organic substances, the intermediate layer 130 may also include metal-containing compounds such as organometallic compounds, inorganic substances such as quantum dots, etc.

[0103] Additionally, the intermediate layer 130 may include: i) two or more emitting units stacked sequentially between the first electrode 110 and the second electrode 150; and ii) a charge generation layer disposed between the two emitting units. When the intermediate layer 130 includes the emitting units and charge generation layer as described above, the light-emitting element 100 may be a tandem light-emitting element.

[0104] Hole transport region in intermediate layer 130

[0105] The hole transport region may have the following structures: i) a single-layer structure consisting of a single layer composed of a single material; ii) a single-layer structure consisting of a single layer containing multiple different materials; or iii) a multi-layer structure comprising multiple layers containing multiple different materials.

[0106] The hole transport region may include a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof.

[0107] For example, the hole transport region may have a multilayer structure consisting of hole injection layer / hole transport layer, hole injection layer / hole transport layer / light emission auxiliary layer, hole injection layer / light emission auxiliary layer, hole transport layer / light emission auxiliary layer, or hole injection layer / hole transport layer / electron blocking layer stacked sequentially starting from the first electrode 110.

[0108] The hole transport region may include a compound represented by the following chemical formula 201, a compound represented by the following chemical formula 202, or any combination thereof:

[0109] <Chemical Formula 201>

[0110]

[0111] <Chemical Formula 202>

[0112]

[0113] In the aforementioned chemical formulas 201 and 202,

[0114] L 201 To L 204 Independent of each other, for at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups,

[0115] L 205 It can be *-O-*′, *-S-*′, *-N(Q) 201 )-*′、by at least one R 10a C1-C, whether substituted or not 20 Alkylene, by at least one R 10a C2-C, whether substituted or not 20alkenyl group, with at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups,

[0116] xa1 to xa4 are independent integers from 0 to 5.

[0117] xa5 is an integer from 1 to 10.

[0118] R 201 To R 204 And Q 201 Independent of each other, for at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups,

[0119] R 201 and R 202 Optionally, it can be used via a single bond, by at least one R 10a Substituted or unsubstituted C1-C5 alkylene groups or those with at least one R 10a Substituted or unsubstituted C2-C5 alkenyl groups are linked together to form a structure with at least one R 10a C8-C, whether replaced or not 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., see compound HT16 below, etc.),

[0120] R 203 and R 204 Optionally, it can be used via a single bond, by at least one R 10a Substituted or unsubstituted C1-C5 alkylene groups or those with at least one R 10a Substituted or unsubstituted C2-C5 alkenyl groups are linked together to form a structure with at least one R 10a C8-C, whether replaced or not 60 Polycyclic groups, and

[0121] na1 can be any integer from 1 to 4.

[0122] For example, chemical formulas 201 and 202 may each include at least one of the groups represented by chemical formulas CY201 to CY217:

[0123]

[0124] In the chemical formulas CY201 to CY217, for R 10b and R 10c For further explanation, please refer to the description of R in this manual. 10a The explanation, and the CY ring 201 To CY 204 They can be C3-C independently of each other. 20 Carbocyclic groups or C1-C 20 Heterocyclic groups, wherein at least one hydrogen atom of the chemical formulas CY201 to CY217 can be R as described in this specification. 10a Replaced or not replaced.

[0125] According to one implementation example, the cyclic CY in chemical formulas CY201 to CY217 201 To CY 204 They can be phenyl groups, naphthol groups, phenanthrene groups, or anthracene groups, each independent of the other.

[0126] According to another implementation, chemical formula 201 and chemical formula 202 may each include at least one of the groups represented by chemical formulas CY201 to CY203.

[0127] According to another implementation, the chemical formula 201 may include at least one of the groups represented by the chemical formulas CY201 to CY203 and at least one of the groups represented by the chemical formulas CY204 to CY217.

[0128] According to another implementation example, in the chemical formula 201, xa1 can be 1, R 201 It can be a group represented by one of the chemical formulas CY201 to CY203, and xa2 can be 0, R 202 It can be a group represented by one of the chemical formulas CY204 to CY207.

[0129] According to another implementation, each of the chemical formulas 201 and 202 may not include the groups represented by the chemical formulas CY201 to CY203.

[0130] According to another implementation, each of the chemical formulas 201 and 202 may not include the groups represented by the chemical formulas CY201 to CY203, but may include at least one of the groups represented by the chemical formulas CY204 to CY217.

[0131] As yet another example, each of the chemical formulas 201 and 202 may not include the groups represented by the chemical formulas CY201 to CY217.

[0132] For example, the hole transport region may include one of the following compounds: HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA: 4,4',4"-tris(N-carbazolyl)triphenylamine), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA: Polyaniline / Dodecylbenzenesulfonic acid), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS: Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), polyaniline / camphorsulfonic acid (PANI / CSA: Polyaniline / Camphor sulfonic acid). acid), polyaniline / poly(4-styrenesulfonate) (PANI / PSS: Polyaniline / Poly(4-styrenesulfonate)) or any combination thereof:

[0133]

[0134]

[0135]

[0136]

[0137]

[0138] The thickness of the hole transport region can be approximately to approximately (For example, about to approximately When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be approximately [missing information]. to approximately (For example, about to approximately The thickness of the hole transport layer can be approximately... to approximately (For example, about to approximately When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer satisfy the ranges described above, satisfactory hole transport characteristics can be obtained without substantially increasing the driving voltage.

[0139] The light-emitting auxiliary layer is a layer that increases luminous efficiency by compensating for the optical resonance distance caused by the wavelength of light emitted from the light-emitting layer. The electron-blocking layer is a layer that prevents electron leakage from the light-emitting layer to the hole transport region. The aforementioned material that may be included in the hole transport region may be contained in both the light-emitting auxiliary layer and the electron-blocking layer.

[0140] p-dopants

[0141] In addition to the substances described above, the hole transport region may include a charge-generating substance for improving conductivity. The charge-generating substance may be uniformly or non-uniformly dispersed (e.g., in the form of a single layer consisting of the charge-generating substance) within the hole transport region.

[0142] The charge-generating substance may be, for example, a p-doper.

[0143] For example, the lowest unoccupied molecular orbital (LUMO) level of the p-doped agent can be below -3.5 eV.

[0144] According to one embodiment, the p-doper may include quinone derivatives, cyano-containing compounds, compounds containing elements EL1 and EL2, or any combination thereof.

[0145] Examples of the quinone derivatives may include TCNQ, F4-TCNQ, etc.

[0146] Examples of the cyano-containing compounds may include HAT-CN, compounds represented by the following chemical formula 221, etc.

[0147]

[0148] <Chemical Formula 221>

[0149]

[0150] In the chemical formula 221,

[0151] R 221 To R 223 Independent of each other, for at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10aC1-C, whether substituted or not 60 Heterocyclic groups,

[0152] The R 221 To R 223 At least one of them can be a C3-C substituted with the following groups independently. 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 20 Alkyl groups; or any combination thereof.

[0153] In the compound containing elements EL1 and EL2, element EL1 can be a metal, a metalloid, or a combination thereof, and element EL2 can be a nonmetal, a metalloid, or a combination thereof.

[0154] Examples of the metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt. (Co, Rhodium (Rh), Iridium (Ir), Nickel (Ni), Palladium (Pd), Platinum (Pt), Copper (Cu), Silver (Ag), Gold (Au), etc.); later transition metals (e.g., Zinc (Zn), Indium (In), Tin (Sn), etc.); and lanthanides (e.g., Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), etc.).

[0155] Examples of the quasi-metals may include silicon (Si), antimony (Sb), tellurium (Te), etc.

[0156] Examples of the nonmetals may include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0157] For example, the compounds containing elements EL1 and EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides, quasi-metal iodides, etc.), metal tellurides, or any combination thereof.

[0158] Examples of the metal oxides may include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxides (e.g., ReO3, etc.), etc.

[0159] Examples of the metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, etc.

[0160] Examples of the alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0161] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0162] Examples of the transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, etc.). Halides of chromium (e.g., CrF3, CrCl3, CrBr3, CrI3), molybdenum (e.g., MoF3, MoCl3, MoBr3, MoI3), tungsten (e.g., WF3, WCl3, WBr3, WI3), manganese (e.g., MnF2, MnCl2, MnBr2, MnI2), technetium (e.g., TcF2, TcCl2, TcBr2, TcI2), and rhenium (e.g., ReF2, ReCl2, ReB). Iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2), and iridium halides (e.g., IrF2, IrCl2, Ir...). Halides of various metals include: Br2, IrI2, etc.; nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.); palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.); platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.); copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.); silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.); and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.).

[0163] Examples of the post-transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), and tin halides (e.g., SnI2, etc.).

[0164] Examples of the lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, etc.

[0165] Examples of the quasi-metal halide may include antimony halides (e.g., SbCl5, etc.).

[0166] Examples of the metal tellurides may include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, etc.). FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0167] [The light-emitting layer in intermediate layer 130]

[0168] When the light-emitting element 100 is a full-color light-emitting element, the light-emitting layer can be patterned into a red light-emitting layer, a green light-emitting layer, and / or a blue light-emitting layer according to independent sub-pixels. Alternatively, the light-emitting layer can have a structure in which two or more of the red, green, and blue light-emitting layers are stacked in a contacting or spaced manner, or have a structure in which two or more of the red, green, and blue light-emitting materials are mixed without distinguishing between layers, thereby emitting white light.

[0169] The light-emitting layer may include a substrate and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, or any combination thereof.

[0170] Based on 100 parts by weight of the main body, the content of dopant in the light-emitting layer can be from about 0.01 parts by weight to about 15 parts by weight.

[0171] Alternatively, the light-emitting layer may include the aforementioned quantum dot composite (hereinafter also referred to as "quantum dot").

[0172] Additionally, the luminescent layer may include a delayed fluorescent material. This delayed fluorescent material can function as either a host or a dopant in the luminescent layer.

[0173] The thickness of the light-emitting layer can be approximately to approximately (For example, about to approximately When the thickness of the light-emitting layer meets the above-mentioned range, excellent light-emitting characteristics can be exhibited without substantially increasing the driving voltage.

[0174]

Quantum dot

[0175] The light-emitting layer may include quantum dots.

[0176] In this specification, a quantum dot refers to a crystal of a semiconductor compound, which may include any material capable of emitting light of various wavelengths depending on the size of the crystal. Quantum dots can also emit light of various wavelengths by adjusting the elemental ratios within the quantum dot compound.

[0177] The diameter of the quantum dot can be, for example, from about 1 nm to 10 nm.

[0178] The quantum dots can be synthesized by wet chemical processes, metal-organic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes.

[0179] The wet chemical process is a method for growing quantum dot crystals by mixing organic solvents and precursor materials. During crystal growth, the organic solvent acts as a dispersant naturally coordinated to the surface of the quantum dot crystals and regulates the crystal growth. Therefore, the growth of quantum dot particles can be controlled more easily and at a lower cost than vapor deposition methods (such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)).

[0180] The quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0181] Examples of the group II-VI semiconductor compounds may include: binary compounds, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, C dZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.

[0182] Examples of the group III-V semiconductor compounds may include: binary compounds, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. Additionally, the group III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0183] Examples of the III-VI semiconductor compounds may include: binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds, such as InGaS3, InGaSe3, etc.; or any combination thereof.

[0184] Examples of the group I-III-VI semiconductor compounds may include: ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc., or any combination of AgInGaS, AgInGaS2, CuInGaS2, etc.

[0185] Examples of the IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds, such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0186] The group IV elements or compounds may include: single elements, such as Si and Ge; binary compounds, such as SiC and SiGe; or any combination thereof.

[0187] Each element included in a multi-component compound, such as the binary compound, the ternary compound, and the quaternary compound, may exist in the particles at a uniform or non-uniform concentration.

[0188] Furthermore, the quantum dots can have a single structure with a uniform concentration of each element included in the corresponding quantum dot, or a core-shell dual structure. For example, the material included in the core can be different from the material included in the shell.

[0189] The shell of the quantum dot can function as a protective layer to prevent chemical denaturation of the core and maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and the shell can have a concentration gradient where the concentration of elements present in the shell gradually decreases towards the center.

[0190] Examples of the shell for the quantum dot may include oxides of metals, quasi-metals, or non-metals, semiconductor compounds, or combinations thereof. Examples of oxides of metals, quasi-metals, or non-metals may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; or any combination thereof. Examples of semiconductor compounds may include group II-VI, group III-V, group III-VI, group I-III-VI, group IV-VI semiconductor compounds, or any combination thereof as described in this specification. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0191] Quantum dots can have a full width at half maximum (FWHM) of emission wavelengths below approximately 45 nm (specifically below approximately 40 nm, and more specifically below approximately 30 nm), and within this range, color purity or color reproducibility can be improved. Furthermore, light emitted through such quantum dots is directed in all directions, thus improving wide viewing angles.

[0192] Furthermore, quantum dots can take the form of spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplates, etc.

[0193] By adjusting the size of the quantum dots, the band gap can be tuned, thus allowing the acquisition of light with multiple wavelength bands in the quantum dot emitting layer. Therefore, by using quantum dots of different sizes, light-emitting elements emitting multiple wavelengths of light can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be configured to combine multiple colors of light to emit white light.

[0194] Electron transport region in intermediate layer 130

[0195] The electron transport region may have the following structures: i) a monolayer structure consisting of a single layer composed of a single material; ii) a monolayer structure consisting of a single layer containing multiple different materials; or iii) a multilayer structure comprising multiple layers containing multiple different materials.

[0196] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0197] For example, the electron transport region may have a structure of electron transport layers / electron injection layers or hole blocking layers / electron transport layers / electron injection layers stacked sequentially from the light-emitting layer.

[0198] The electron transport region (e.g., a hole-blocking layer or an electron transport layer within the electron transport region) may include a nitrogen-containing C1-C layer containing at least one π-electron-poor material. 60 Cyclic group (πelectron-deficient nitrogen-containing C1-C) 60 Metal-free compounds (cyclic group).

[0199] For example, the electron transport region may include a compound represented by the following chemical formula 601.

[0200] <Chemical Formula 601>

[0201] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0202] In the chemical formula 601,

[0203] Ar 601 and L 601 Independent of each other, for at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups,

[0204] xe11 is 1, 2, or 3.

[0205] xe1 is 0, 1, 2, 3, 4, or 5.

[0206] R 601For being at least one R 10a C3-C, whether substituted or not 60 Carbocyclic group, with at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0207] For the Q 601 To Q 603 For further details, please refer to the description of Q1 in this instruction manual.

[0208] xe21 is 1, 2, 3, 4, or 5.

[0209] The Ar 601 L 601 and R 601 At least one of them can be independently of each other as a result of at least one R. 10a Nitrogen-containing C1-C atoms with substituted or unsubstituted π electrons 60 Cyclic groups.

[0210] For example, in the case where xe11 in the chemical formula 601 is 2 or more, two or more Ar 601 They can be connected to each other using a single key.

[0211] As another example, Ar in chemical formula 601 601 It can be an anthracene group that has been substituted or not.

[0212] As yet another example, the electron transport region may include a compound represented by the following chemical formula 601-1:

[0213] <Chemical Formula 601-1>

[0214]

[0215] In the chemical formula 601-1,

[0216] X 614 For N or C(R) 614 ), X 615 For N or C(R) 615 ), X 616 For N or C(R) 616 ), X 614 To X 616At least one of them is N,

[0217] For L 611 To L 613 The descriptions refer to the L respectively. 601 Explanation.

[0218] The descriptions of xe611 to xe613 are respectively based on the description of xe1.

[0219] For R 611 To R 613 The descriptions refer to the descriptions of R respectively. 601 The explanation,

[0220] R 614 To R 616 They can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl group, with at least one R 10a C3-C, whether substituted or not 60 The carbocyclic group or is surrounded by at least one R 10a C1-C, whether substituted or not 60 Heterocyclic groups.

[0221] For example, xe1 and xe611 to xe613 in the chemical formula 601 and the chemical formula 601-1 can be 0, 1 or 2 independently of each other.

[0222] The electron transport region may include one of the following compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0223]

[0224]

[0225]

[0226]

[0227] The thickness of the electron transport region can be approximately to approximately For example, about to approximately When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer or the electron transport layer can be independently determined by approximately [missing information]. to approximately (For example, about to approximately The thickness of the electron transport layer can be approximately to approximately (For example, about to approximately When the thickness of the hole blocking layer and / or electron transport layer meets the range described above, satisfactory electron transport characteristics can be obtained without substantially increasing the driving voltage.

[0228] In addition to the substances described above, the electron transport region (e.g., the electron transport layer in the electron transport region) may also include a metallic substance.

[0229] The metal-containing substance may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ion of the alkali metal complex may be Li, Na, K, Rb, or Cs ions, and the metal ion of the alkaline earth metal complex may be Be, Mg, Ca, Sr, or Ba ions. The ligands coordinated to the metal ions of the alkali metal and alkaline earth metal complexes may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0230] For example, the metal-containing substance may include a Li complex. The Li complex may, for example, include compounds such as ET-D1 (LiQ) or ET-D2:

[0231]

[0232] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0233] The electron injection layer may have the following structures: i) a single-layer structure consisting of a single layer composed of a single substance; ii) a single-layer structure consisting of a single layer containing multiple different substances; or iii) a multi-layer structure including multiple layers containing multiple different substances.

[0234] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0235] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0236] The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may include oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, respectively, or any combination thereof.

[0237] The alkali metal compound may include alkali metal oxides such as Li2O, Cs2O, K2O, etc., alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc., or any combination thereof. The alkaline earth metal compound may include BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying 0 < x < 1), Ba x Ca 1-xAlkaline earth metal oxides such as O (where x is a real number satisfying 0 < x < 1). The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. Alternatively, the rare earth metal-containing compound may include lanthanide metal tellurides. Examples of the lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, etc.

[0238] The alkali metal complex, alkaline earth metal complex, and rare earth metal complex may include: i) one of the ions of the alkali metal, alkaline earth metal, and rare earth metal as described above; and ii) a ligand bonded to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0239] The electron injection layer may be composed only of the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof as described above, or may further include an organic substance (for example, a compound represented by the chemical formula 601).

[0240] According to one implementation example, the electron injection layer may i) consist of an alkali metal-containing compound (for example, an alkali metal halide), or ii) consist of a) an alkali metal-containing compound (for example, an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer or a RbI:Yb co-deposited layer, etc.

[0241] When the electron injection layer further includes an organic substance, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic substance.

[0242] The thickness of the electron injection layer can be approximately to approximately about to approximately When the thickness of the electron injection layer meets the range described above, satisfactory electron injection characteristics can be obtained without substantially increasing the driving voltage.

[0243] [Second Electrode 150]

[0244] A second electrode 150 is arranged on the upper part of the intermediate layer 130 as described above. The second electrode 150 can be a cathode that serves as an electron injection electrode. In this case, a metal, alloy, conductive compound, or any combination thereof with a low work function can be used as the material for the second electrode 150.

[0245] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0246] The second electrode 150 may have a single-layer structure or a multi-layer structure including multiple layers.

[0247]

Overlay

[0248] A first cover layer may be disposed on the outer side of the first electrode 110, and / or a second cover layer may be disposed on the outer side of the second electrode 150. Specifically, the light-emitting element 100 may have: a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in sequence; a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are stacked in sequence; or a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are stacked in sequence.

[0249] The light generated by the light-emitting layer in the intermediate layer 130 of the light-emitting element 100 can be extracted outward through the first electrode 110, which serves as a semi-transparent electrode or a transmissive electrode, and the first cover layer. The light generated by the light-emitting layer in the intermediate layer 130 of the light-emitting element 100 can be extracted outward through the second electrode 150, which serves as a semi-transparent electrode or a transmissive electrode, and the second cover layer.

[0250] The first and second capping layers can increase the external luminous efficiency based on the principle of constructive interference. Therefore, the light extraction efficiency of the light-emitting element 100 is increased, thereby improving the luminous efficiency of the light-emitting element 100.

[0251] Each of the first and second capping layers may include a material having a refractive index of 1.6 or higher (at 589 nm).

[0252] The first and second covering layers can be independently of each other as an organic covering layer including organic matter, an inorganic covering layer including inorganic matter, or an organic-inorganic composite covering layer including both organic and inorganic matter.

[0253] At least one of the first and second capping layers may independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may be selectively substituted with substituents comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to one embodiment, at least one of the first and second capping layers may independently comprise an amino-containing compound.

[0254] For example, at least one of the first and second capping layers may independently include a compound represented by chemical formula 201, a compound represented by chemical formula 202, or any combination thereof.

[0255] According to another implementation, at least one of the first and second capping layers may independently include one of the compounds HT28 to HT33, one of the compounds CP1 to CP6, β-NPB, or any combination thereof:

[0256]

[0257] Electronic devices

[0258] The light-emitting element 100 can be included in various electronic devices. For example, an electronic device including the light-emitting element 100 can be a light-emitting device, an authentication device, etc.

[0259] In addition to the light-emitting element 100, the electronic device (e.g., the light-emitting device) may further include: i) a color filter; ii) a color conversion layer; or iii) a color filter and a color conversion layer. The color filter and / or color conversion layer may be arranged in the direction of travel of at least one of the light emitted from the light-emitting element 100. For example, the light emitted from the light-emitting element 100 may be blue light or white light. The description of the light-emitting element 100 refers to the description above.

[0260] The electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.

[0261] A pixel-defining film is arranged between the plurality of sub-pixel regions to define each sub-pixel region.

[0262] The color filter may further include multiple color filter areas and a light-blocking pattern arranged between the multiple color filter areas, and the color conversion layer may further include multiple color conversion areas and a light-blocking pattern arranged between the multiple color conversion areas.

[0263] The plurality of color filter regions (or plurality of color conversion regions) include: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or plurality of color conversion regions) may include quantum dots. Specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. A description of quantum dots is provided in this specification. Each of the first region, the second region, and / or the third region may also include a scatterer.

[0264] The region comprising quantum dots can be formed using a composition comprising a quantum dot complex according to an embodiment of the invention.

[0265] For example, the light-emitting element can emit a first light, the first region can absorb the first light and emit light of color 1-1, the second region can absorb the first light and emit light of color 2-1, and the third region can absorb the first light and emit light of color 3-1. In this case, the first-1 color light, the second-1 color light, and the third-1 color light can have different maximum emission wavelengths. Specifically, the first light can be blue light, the first-1 color light can be red light, the second-1 color light can be green light, and the third-1 color light can be blue light.

[0266] In addition to the light-emitting element 100 as described above, the electronic device may also include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode 110 or the second electrode 150 of the light-emitting element 100.

[0267] The thin-film transistor may also include a gate electrode, a gate insulating film, etc.

[0268] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, etc.

[0269] The electronic device may further include a sealing portion for sealing the light-emitting element 100. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting element 100. The sealing portion allows light from the light-emitting element 100 to be extracted to the outside while preventing external air and moisture from penetrating into the light-emitting element 100. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one organic layer and / or inorganic layer. In the case where the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0270] In addition to the color filter and / or color conversion layer, various functional layers may be additionally arranged on the sealing portion, depending on the purpose of the electronic device. Examples of such functional layers may include a touchscreen layer, a polarizing layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer.

[0271] The authentication device may be, for example, a biometric authentication device for authenticating an individual by utilizing biological information from a living organism (e.g., fingertips, pupils, etc.).

[0272] In addition to the light-emitting element 100 as described above, the authentication device may also include a biometric information collector.

[0273] The electronic device can be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic manuals, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, endoscopic display devices), fish finders, various measuring instruments, meters (e.g., meters for vehicles, airplanes, and ships), projectors, etc.

[0274] Electronic devices

[0275] The light-emitting element 100 can be included in various electronic devices.

[0276] For example, an electronic device including the light-emitting element 100 may be one of the following: a flat panel display, a curved display, a computer monitor, a medical display, a television, a billboard, indoor or outdoor lighting and / or signal lights, a head-up display, a fully transparent or partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a portable telephone, a tablet computer, a tablet phone, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a camcorder, a viewfinder, a microdisplay, a 3D display, a virtual reality display or an augmented reality display, a vehicle, a video wall including multiple displays tiled together, a theater screen or stadium screen, a phototherapy device, and a billboard.

[0277] The light-emitting element 100 has excellent luminous efficiency and long lifespan. Therefore, the electronic device including the light-emitting element 100 can have characteristics such as high brightness, high resolution, and low power consumption.

[0278]

【right Figure 2 and Figure 3 [Explanation]

[0279] Figure 2 This is a cross-sectional view of an electronic device 180 according to an embodiment of the present invention.

[0280] Figure 2 The electronic device 180 includes a substrate SUB, a thin-film transistor (TFT), a light-emitting element, and a package 300 that seals the light-emitting element.

[0281] The substrate SUB can be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 can be disposed on the substrate SUB. The buffer layer 210 serves to prevent impurities from penetrating through the substrate SUB and to provide a flat surface on the upper part of the substrate SUB.

[0282] A thin-film transistor (TFT) may be disposed on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0283] The active layer 220 may include inorganic semiconductors, organic semiconductors, or oxide semiconductors such as silicon or polysilicon, and includes a source region, a drain region, and a channel region.

[0284] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be disposed on the upper part of the active layer 220, and the gate electrode 240 may be disposed on the upper part of the gate insulating film 230.

[0285] An interlayer insulating film 250 may be disposed on the upper part of the gate electrode 240. The interlayer insulating film 250 is disposed between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270, thereby insulating the gate electrode 240 from the source electrode 260 and from the drain electrode 270.

[0286] An active electrode 260 and a drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may be arranged to contact the exposed source and drain regions of the active layer 220.

[0287] The thin-film transistor (TFT) described above can be electrically connected to a light-emitting element to drive the light-emitting element, and can be protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element may be disposed on the passivation layer 280. The light-emitting element includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0288] The first electrode 110 may be disposed on the passivation layer 280. The passivation layer 280 is disposed in such a way that it does not completely cover the drain electrode 270 but exposes a predetermined area of ​​the drain electrode 270, and the first electrode 110 may be disposed to be connected to the exposed drain electrode 270.

[0289] A pixel defining film 290, including an insulating material, can be disposed on the first electrode 110. The pixel defining film 290 exposes a predetermined area of ​​the first electrode 110, and an intermediate layer 130 can be formed in the exposed area. The pixel defining film 290 can be a polyimide-based organic film or a polyacrylic acid-based organic film. (Although not illustrated in...) Figure 3However, more than a portion of the intermediate layer 130 can extend to the top of the pixel-limiting film 290 and be arranged in the form of a common layer.

[0290] A second electrode 150 is disposed on the intermediate layer 130, and a cover layer 170 may be additionally formed on the second electrode 150. The cover layer 170 may be formed to cover the second electrode 150.

[0291] An encapsulation portion 300 may be disposed on the cover layer 170. The encapsulation portion 300 may be disposed on the light-emitting element and serves to protect the light-emitting element from moisture or oxygen. The encapsulation portion 300 may include an inorganic film, including silicon nitride (SiN). x ), silicon oxide (SiO) x Indium tin oxide, indium zinc oxide, or combinations thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resins (e.g., aliphatic glycidyl ether, etc.) or any combination thereof; or combinations of inorganic and organic membranes.

[0292] Figure 3 This is a cross-sectional view of an electronic device 190 according to another embodiment of the present invention.

[0293] Apart from the fact that the light-blocking pattern 500 and the functional area 400 are additionally arranged on the upper part of the packaging section 300, Figure 3 Electronic devices 190 and Figure 2 The electronic device 180 is the same electronic device. The functional region 400 may be: i) a color filter region; ii) a color conversion region; or iii) a combination of a color filter region and a color conversion region. According to one implementation example, it includes... Figure 3 The light-emitting elements of an electronic device can be cascaded light-emitting elements.

[0294]

【right Figure 4 [Explanation]

[0295] The light-emitting element according to the embodiments can be applied to a variety of electronic devices. An electronic device according to one embodiment may include the light-emitting element described above; in addition to the light-emitting element, the electronic device may also include modules or devices with other additional functions.

[0296] Figure 4 This is a block diagram of an electronic device 10 according to one embodiment. (Refer to...) Figure 4According to one embodiment, the electronic device 10 may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0297] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0298] The memory 13 can store the data information required for the operation of the processor 12 or the display module 11. If the processor 12 executes the application stored in the memory 13, the image data signal and / or input control signal can be transmitted to the display module 11, which can process the received signal and output the image information through the display screen.

[0299] The power module 14 may include a power supply module such as a power adapter or battery device and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 10.

[0300] At least one of the various configurations of the electronic device 10 described above can be included within the light-emitting element according to the above embodiments. Furthermore, a portion of each module functionally included within a single module can also be included within the light-emitting element, while another portion can be disposed independently of the light-emitting element. For example, the light-emitting element may include a display module 11, while the processor 12, memory 13, and power module 14 can be provided as other devices within the electronic device 10, rather than as part of the light-emitting element.

[0301]

【right Figure 5 [Explanation]

[0302] Figure 5 This is a schematic diagram illustrating an electronic device according to various embodiments.

[0303] Reference Figure 5The various electronic devices that utilize the light-emitting elements according to the embodiments include not only image display electronic devices such as smartphones 10_1a, tablet computers 10_1b, laptop computers 10_1c, televisions (TVs) 10_1d, and desktop monitors 10_1e, but also wearable electronic devices including display modules, such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c; vehicle electronic devices 10_3 including display modules, such as dashboards, central dashboards, central information displays (CIDs) arranged on instrument panels, and room mirror displays; etc.

[0304] [Preparation Method]

[0305] Each layer, including the hole transport region, the light-emitting layer, and each layer, including the electron transport region, can be formed in the predetermined area using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI).

[0306] The color filter area, color conversion area, etc., can be formed in the predetermined area using spin coating, casting, inkjet printing, etc.

[0307] In the case where the layers comprising the hole transport region, the light-emitting layer, and the layers comprising the electron transport region are formed separately by means of a vacuum deposition method, for example, a deposition temperature of about 100°C to about 500°C and a deposition temperature of about 10 -8 To about 10 -3 The vacuum degree of Tor and about to approximately Within the deposition rate range, deposition conditions are selected considering the material to be included in the layer to be formed and the structure of the layer to be formed.

[0308] When forming layers including a hole transport region, a light-emitting layer, and layers including an electron transport region separately by spin coating, deposition conditions can be selected, for example, at a coating speed of about 2000 rpm to about 5000 rpm and a heat treatment temperature range of about 80°C to 200°C, taking into account the material to be included in the layer to be formed and the structure of the layer to be formed.

[0309] The composition according to one embodiment of the present invention can be used in solution processes such as spin coating or inkjet printing.

[0310] [Definition of the term]

[0311] In this specification, C3-C 60 A carbocyclic group is a cyclic group consisting of 3 to 60 carbon atoms, formed using only carbon as the ring-forming atom. (C1-C) 60 Heterocyclic groups refer to cyclic groups with 1 to 60 carbon atoms, including heteroatoms as cyclic atoms in addition to carbon. The C3-C... 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be either monocyclic groups consisting of a single ring or polycyclic groups consisting of two or more rings condensed together. For example, the C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0312] In this specification, the cyclic group includes the C3-C... 60 Carbocyclic groups and C1-C 60 Both heterocyclic groups.

[0313] In this specification, the π-electron-rich C3-C 60 Cyclic groups (πelectron-rich C3-C) 60 Cyclic group refers to a nitrogen-containing C1-C group that does not include the cyclic group consisting of 3 to 60 carbon atoms as the cyclic part, and is π-electron-poor. 60 Cyclic group (πelectron-deficient nitrogen-containing C1-C) 60 A cyclic group refers to a heterocyclic group with 1 to 60 carbon atoms, including *-N=*′ as the cyclic part.

[0314] For example:

[0315] The C3-C 60 The carbocyclic group can be: i) group T1 or ii) a condensed ring group formed by the condensation of two or more groups T1 (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, cyclopentadienyl group, naphthyl group, chamomile ring group, indane group, acenaphthene group, phenanthrene group, phenanthrene group, anthracene group, fluoranthene group, benzo[9,10]phenanthrene group, pyrene group, Groups, perylene groups, pentanene groups, heptaphenyl groups, tetraphenyl groups, fentanyl groups, hexaphenyl groups, pentaphenyl groups, rutin groups, fentanyl groups, ovoid groups, indole groups, fluorene groups, spirodifluorene groups, benzo[a]fluorene groups, indole[a]phenanthrene groups, or indole[a]anthracene groups),

[0316] The C1-C 60The heterocyclic group can be: i) group T2; ii) a condensation ring group formed by the condensation of two or more groups T2; or iii) a condensation ring group formed by the condensation of one or more groups T2 and one or more groups T1 (e.g., pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzothiophene group, benzofuran group, carbazole group, dibenzothiophene group, dibenzothiophene group, dibenzofuran group, indolecarbazole group, indolecarbazole group, benzofuran-carbazole group, benzothiophenecarbazole group, benzothiophenecarbazole group, benzoindolecarbazole group, benzocarbazole group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group, benzofuran-dibenzothiophene). Groups, benzothiophene, dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benziisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzo[…] Quinoline group, benzoisoquinoline group, quinoxaloline group, benzoquinoxaloline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamoline group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0317] The π-electron-rich C3-C 60 The cyclic group can be: i) group T1; ii) a condensed cyclic group formed by the condensation of two or more groups T1; iii) group T3; iv) a condensed cyclic group formed by the condensation of two or more groups T3; or v) a condensed cyclic group formed by the condensation of one or more groups T3 and one or more groups T1 (e.g., the C3-C group). 60Carbocyclic groups, 1H-pyrrole groups, thiorrole groups, borole groups, 2H-pyrrole groups, 3H-pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiorrole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiorrole groups, dibenzothiophene Groups, including dibenzofuran group, indole-carbazole group, indole-carbazole group, benzofuran-carbazole group, benzothiophene-carbazole group, benzothiophene-carbazole group, benzoindole-carbazole group, benzocarbazole group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group, benzofuran-dibenzothiophene group, benzothiophene-dibenzothiophene group, etc.

[0318] The nitrogen-containing C1-C with depleted π electrons 60 The cyclic group can be: i) group T4; ii) a condensed cyclic group formed by the condensation of two or more groups T4; iii) a condensed cyclic group formed by the condensation of one or more groups T4 and one or more groups T1; iv) a condensed cyclic group formed by the condensation of one or more groups T4 and one or more groups T3; or v) a condensed cyclic group formed by the condensation of one or more groups T4, one or more groups T1, and one or more groups T3 (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, etc.). Benzooxazole group, benzoisooxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0319] The group T1 can be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, adamantane group, norbornane (or bicyclo[2.2.1]heptane) group, norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a phenyl group.

[0320] The group T2 can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borole group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathiorrole group, azaborolecyclopentadiene group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, tetraazine group, pyrrolidinyl group, imidazoalkyl group, dihydropyrrole group, piperidine group, tetrahydropyridine group, dihydropyridine group, hexahydropyrimidine group, tetrahydropyrimidine group, dihydropyrimidine group, piperazine group, tetrahydropyrazine group, dihydropyrazine group, tetrahydropyridazine group, or dihydropyridazine group.

[0321] The group T3 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borole group, and

[0322] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0323] The terms cyclic group, C3-C in this specification 60 carbonyl group, C1-C 60 Heterocyclic groups, π-electron-rich C3-C 60 Cyclic groups or nitrogen-containing C1-C groups with depleted π electrons 60A cyclic group refers to a group whose structure, according to the chemical formula used in this term, is condensed with any cyclic group. It can be a monovalent group or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.). For example, a "phenyl group" can be a benzo[a] group, a phenyl group, a phenylene group, etc., which can be readily understood by those skilled in the art based on the structure of a chemical formula that includes a "phenyl group".

[0324] For example, unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl groups, monovalent non-aromatic condensed polycyclic groups, and monovalent non-aromatic condensed heterocyclic groups; divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hypoaryl groups, divalent non-aromatic condensed polycyclic groups, and divalent non-aromatic condensed heterocyclic groups.

[0325] In this specification, C1-C 60 Alkyl groups refer to monovalent groups of straight-chain or branched aliphatic hydrocarbons having 1 to 60 carbon atoms. Specific examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isohexyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, tert-decyl, etc. The C1-C groups in this specification... 60 Alkylene refers to a group having a C1-C... 60 Divalent groups with the same structure as alkyl groups.

[0326] In this specification, C2-C 60 Alkenyl refers to the group at C2-C 60The alkyl group, either intermediate or terminal, comprises one or more monovalent hydrocarbon groups consisting of a carbon-carbon double bond; specific examples include vinyl, propenyl, butenyl, etc. The C2-C groups in this specification... 60 alkenyl groups refer to those having a similar structure to the C2-C group. 60 Divalent groups with the same structure as alkenyl groups.

[0327] In this specification, C2-C 60 Alkyne refers to the group at C2-C 60 Alkyl groups, either intermediately or terminally, include one or more monovalent hydrocarbon groups comprising a carbon-carbon triple bond; specific examples include ethynyl and propynyl groups. The C2-C groups in this specification... 60 The alkynyl group refers to the group having a similar structure to the C2-C group. 60 Divalent groups with the same structure as alkynyl groups.

[0328] In this specification, C1-C 60 Alkoxy groups refer to those with -OA 101 (where A) 101 It is the C1-C 60 Alkyl groups are monovalent groups in the chemical formula of alkyl groups, and specific examples include methoxy, ethoxy, isopropoxy, etc.

[0329] In this specification, C3-C 10 Cycloalkyl refers to a monovalent saturated hydrocarbon cyclic group with 3 to 10 carbon atoms. Specific examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantanyl, norbornanyl (or bicycloheptanyl), bicyclopentyl, bicyclohexyl, bicyclooctyl, etc. In this specification, C3-C... 10 Cycloalkylene refers to compounds with C3-C66 atoms. 10 Divalent groups with the same structure as cycloalkyl groups.

[0330] In this specification, C1-C 10 Heterocyclic alkyl groups refer to monovalent cyclic groups with 1 to 10 carbon atoms, including at least one heteroatom as a cyclic atom in addition to carbon atoms. Specific examples include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, and tetrahydrothienyl. In this specification, C1-C 10 Heterocyclic alkyl refers to a group having a C1-C2 structure similar to the aforementioned C1-C2. 10Divalent groups with the same structure as heterocyclic alkyl groups.

[0331] In this specification, C3-C 10 Cycloalkenyl groups refer to monovalent cyclic groups with 3 to 10 carbon atoms. They represent groups with at least one carbon-carbon double bond within the ring, but lack aromaticity. Specific examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl. In this specification, C3-C... 10 Cycloalkylene refers to the group that is related to the C3-C 10 Cycloalkenyl groups are divalent groups with the same structure.

[0332] In this specification, C1-C 10 Heterocyclic alkenyl groups refer to monovalent cyclic groups with 1 to 10 carbon atoms, including at least one heteroatom as a cyclic atom in addition to carbon atoms, and possessing at least one double bond within the ring. The C1-C... 10 Specific examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, 2,3-dihydrothiophenyl, etc. The C1-C groups in this specification... 10 Heterocyclic alkenyl groups refer to those having the same characteristics as the C1-C1 group. 10 Divalent groups with the same structure as heterocyclic alkenyl groups.

[0333] In this specification, C6-C 60 Aryl groups are monovalent groups in aromatic ring systems with 6 to 60 carbon atoms, C6-C. 60 A aryl group refers to a divalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms. The C6-C... 60 Specific examples of aryl groups include phenyl, cyclopentadienyl, naphthyl, chamomilecycloyl, indoleyl, acenaphthel, phenanthyl, anthracene, fluoranthyl, benzo[9,10]phenanthyl, pyrene, Compounds, perylene, pentylenyl, hepta-enyl, tetraphenyl, fenyl, hexaphenyl, pentaphenyl, rutinyl, phenphenyl, and ovoidyl, etc. In the C6-C... 60 Aryl and C6-C 60 When a aryl group comprises two or more rings, the two or more rings can be condensed together.

[0334] In this specification, C1-C 60 A heteroaryl group is a monovalent group in a heterocyclic aromatic system that includes at least one heteroatom as a cyclic atom in addition to a carbon atom, and has 1 to 60 carbon atoms. (C1-C) 60 A heteroaryl group is a divalent group in a heterocyclic aromatic system that, in addition to a carbon atom, includes at least one heteroatom as a cyclic atom and has 1 to 60 carbon atoms. The C1-C60 Specific examples of heteroaryl groups include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cenolinyl, phenanthrolinel, phthalazinyl, naphthidyl, etc. In the C1-C... 60 heteroaryl and C1-C 60 When a heteroaryl group comprises two or more rings, the two or more rings can condense together.

[0335] In this specification, a monovalent non-aromatic condensed polycyclic group refers to a monovalent group in which two or more rings are condensed together, and the cyclic atoms consist only of carbon atoms, and the entire molecule possesses non-aromaticity (e.g., having 8 to 60 carbon atoms). Specific examples of such monovalent non-aromatic condensed polycyclic groups include indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indo[a]phenanthryl, indo[a]anthrayl, etc. In this specification, a divalent non-aromatic condensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic groups.

[0336] In this specification, a non-aromatic condensed heteropolycyclic group refers to a group of two or more rings condensed together, which includes at least one heteroatom as a cyclic atom in addition to carbon atoms, and the entire molecule is a non-aromatic monovalent group (e.g., having 1 to 60 carbon atoms). Specific examples of the monovalent non-aromatic condensed heterocyclic groups include pyrrolyl, thiophene, furanyl, indoleyl, benzoindoleyl, naphthoindoleyl, isoindoleyl, benzoisoindoleyl, naphthoisoindoleyl, benzothiophene, benzofuranyl, carbazoleyl, dibenzothiophene, dibenzofuranyl, azacarbazoleyl, azafluorenyl, azadibenzothiophene, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl Azolyl, benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazoleyl, indolocarbazoleyl, benzofuranocarbazoleyl, benzothiophenecarbazoleyl, benzothiophenecarbazoleyl, benzoindolocarbazoleyl, benzocarbazoleyl, benzonaphthofuranyl, benzonaphthothiophenyl, benzonaphthothiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, benzothiophenecarbazoleyl, etc. The divalent non-aromatic condensed heteropolycyclic groups in this specification refer to divalent groups having the same structure as the monovalent non-aromatic condensed heteropolycyclic groups described herein.

[0337] In this specification, C6-C 60 Aryloxy group refers to -OA 102 (where A) 102 It is the C6-C 60 Aryl), the C6-C 60 Arylthio refers to -SA 103 (where A) 103 It is the C6-C 60 Aryl).

[0338] In this instruction manual, "C7-C" 60 "Aryl group" refers to -A 104 A 105 (where A) 104 It is C1-C 54 Alkylene, A 104 It is C6-C 59 Aryl), C2-C in this specification 60 Heteroaryl refers to -A 106 A 107 (where A)106 It is C1-C 59 Alkylene, A 107 It is C1-C 59 (Miscellaneous aromatic compounds).

[0339] The "R" in this instruction manual 10a "Can be:

[0340] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl, cyano, or nitro;

[0341] The radicals -deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, and C3-C are used. 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or any combination thereof replacing or not replacing C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy;

[0342] The radicals -deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 heteroaryl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q)22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C, or any combination thereof, may or may not be substituted. 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl or C2-C 60 heteroaryl; or

[0343] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ),

[0344] The Q1 to Q3, Q... in this specification 11 To Q 13 Q 21 To Q 23 And Q 31 To Q 33 Independently, they are: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 alkoxy; or

[0345] Deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or any combination thereof substituted or unsubstituted C3-C 60 Carbocyclic groups or C1-C 60 Heterocyclic group; C7-C 60 Aryl or C2-C 60 Heteroaryl alkyl groups.

[0346] In this specification, a heteroatom refers to any atom other than a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0347] The transition metals mentioned in this specification include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

[0348] In this specification, "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, and "tert-Bu" or "Bu" refers to... t "" refers to tert-butyl, and "OMe" refers to methyl methacrylate (MMA).

[0349] In this specification, "biphenyl" refers to a phenyl group that has been substituted with a phenyl group. The "biphenyl" in this specification belongs to the category where the substituent is C6-C6. 60 "Aryl" is "substituted phenyl".

[0350] In this specification, "terphenyl" refers to a phenyl group substituted with a biphenyl group. The "terphenyl" in this specification refers to a phenyl group whose substituent is a C6-C substituent. 60 Aryl-substituted C6-C 60 "Aryl" is "substituted phenyl".

[0351] The number of carbon atoms in the definition of a substituent is exemplary. For example, in C1-C... 60 The maximum number of carbon atoms in an alkyl group is 60, which is exemplary. The definition of alkyl also applies to C1-C1 alkyl groups. 20 Alkyl groups. The same applies to other cases.

[0352] In the compound structures described in this specification, any hydrogen atom may optionally be replaced by deuterium.

[0353] In this specification, unless otherwise defined, * and *' refer to the binding site with an adjacent atom in the corresponding chemical formula.

[0354] In the following, an embodiment of the compound and light-emitting element of the present invention will be described in more detail through examples.

[0355]

Example

[0356] Preparation of content-containing dot complexes

[0357] Comparative Example 1

[0358] Based on the total weight of the quantum dot complex, the ligand content of the quantum dots (ZnSe shell and InP core, 10 nm) coordinated with the native ligand [oleic acid] was 11.9 wt%, wt% as measured by TGA.

[0359] Comparative Example 2

[0360] Quantum dots coordinated with oleic acid were washed with ethanol (0.2M) containing dissolved ZnCl2, and the precipitate obtained by centrifugation was dried to prepare a quantum dot complex with a ligand content of 10.9 wt% based on the total weight of the quantum dot complex.

[0361] Comparative Example 3

[0362] Except that a 0.3 M ZnCl2 ethanol solution was used to make the content of oleic acid as a ligand reach 8.5 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 2.

[0363] Comparative Example 4

[0364] Oleylamine (melting point (mp): 25 °C) was added as a ligand to achieve a content of 14.3 wt% based on the total weight of the content dot complex, and then stirred at 120 °C for 30 minutes. Afterwards, ethanol was added, centrifuged, and then dispersed in hexane to prepare the content dot complex.

[0365] Comparative Example 5

[0366] Except for the addition of oleylamine as a ligand to achieve a content of 11.6 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0367] Comparative Example 6

[0368] Except for the addition of oleylamine as a ligand to achieve a content of 8.7 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0369] Comparative Example 7

[0370] Except for the addition of 2-ethylhexanoic acid (mp: -59°C) as a ligand to achieve a content of 9.6 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0371] Comparative Example 8

[0372] Except for the addition of 2-ethylhexanoic acid as a ligand to achieve a content of 8.8 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0373] Comparative Example 9

[0374] Except for the addition of 2-ethylhexanoic acid as a ligand to achieve a content of 7.1 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0375] Comparative Example 10

[0376] Except for the addition of 10,12-heptacosadiynoic acid (mp: 43°C) as a ligand to achieve a content of 6.3 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0377] Comparative Example 11

[0378] Except that compound 100 (mp: -15°C) was used as a ligand to achieve a content of 6.3 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 1.

[0379]

[0380] Comparative Example 12

[0381] Except for the addition of oleylcarbamic acid (compound 3) (mp: 30°C) as a ligand to achieve a content of 7.1 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0382] Example 1

[0383] Except for the addition of oleylcarbamic acid (compound 3) as a ligand to achieve a content of 6.3 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0384] Example 2

[0385] Except for the addition of oleylcarbamic acid (compound 3) as a ligand to achieve a content of 6.2 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0386] Example 3

[0387] Except for the addition of oleylcarbamic acid (compound 3) as a ligand to achieve a content of 5.8 wt% based on the total weight of the content dot complex, the content dot complex was prepared in the same manner as in Comparative Example 4.

[0388] Dispersion evaluation

[0389] The content of the sub-dot complexes of the comparative examples and embodiments was added to n-hexane at a content of 3 wt%, and the presence or absence of precipitation was observed. The results are shown in Table 1.

[0390] Table 1

[0391] Dispersion Comparative Example 1 ○ Comparative Example 2 ○ Comparative Example 3 × Comparative Example 4 ○ Comparative Example 5 ○ Comparative Example 6 × Comparative Example 7 ○ Comparative Example 8 × Comparative Example 9 × Comparative Example 10 × Comparative Example 11 × Comparative Example 12 ○ Example 1 ○ Example 2 ○ Example 3 ○

[0392] O: No sediment

[0393] × ： There is sediment

[0394] Preparation of quantum dot compositions

[0395] Example 4

[0396] The composition was prepared by adding the content-rich sub-dot complex of Example 1 to n-hexane at a content of 3 wt% and stirring. The viscosity of the composition was 7 cP (@25°C).

[0397] Example 5

[0398] Except for the use of the content sub-dot complex of Example 2, the composition was prepared using the same method as in Example 4. The viscosity of the composition was 7 cP (@25°C).

[0399] Comparative Example 13

[0400] Except for the use of the content sub-dot complex of Comparative Example 2, the composition was prepared using the same method as in Example 4. The viscosity of the composition was 7 cP (@25°C).

[0401] Comparative Example 14

[0402] Except for the use of the content sub-dot complex of Comparative Example 7, the composition was prepared using the same method as in Example 4. The viscosity of the composition was 7 cP (@25°C).

[0403] Comparative Example 15

[0404] Except for the use of the content sub-dot complex of Comparative Example 12, the composition was prepared using the same method as in Example 4. The viscosity of the composition was 7 cP (@25°C).

[0405] Manufacturing of light-emitting elements

[0406] Example 6

[0407] 15Ω / cm 2 The Ag / ITO glass substrate was cut into 50mm×50mm×0.5mm sizes, ultrasonically cleaned with isopropanol and pure water for 5 minutes each, then irradiated with ultraviolet light for 15 minutes and exposed to ozone for cleaning, and then placed in a vacuum deposition apparatus.

[0408] A hole injection layer (HIL) of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS, Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)), a hole transport layer (HTL) of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB: poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)]], a quantum dot (QD) light-emitting layer (the quantum dot composition of Example 4), an electron transport layer (ETL) (ZnMgO), and a cathode (Al) were sequentially prepared on top of an ITO substrate.

[0409] The HIL, HTL, QD light-emitting layer, and ETL were all fabricated using inkjet coating methods. The cathode was prepared by deposition. The HIL was fabricated as... The thickness of HTL was prepared as The thickness of the QD light-emitting layer is used to fabricate the QD light-emitting layer as follows: The thickness of ETL is used to prepare ETL as The thickness. HIL and HTL, after forming the film, at 10 -3 Chemical vapor deposition (CVD) was performed under Torr, followed by a baking process at 230°C for 30 minutes. After the QD luminescent layer and ETL were formed into a thin film, they were then subjected to a 10-minute baking process. -3 Chemical vapor deposition (CVD) was performed under Torr, followed by a baking process at 100°C for 10 minutes.

[0410] Example 7

[0411] Except for the use of the quantum dot composition of Example 5 in the QD emitting layer, the emitting element was manufactured in the same manner as in Example 6.

[0412] Comparative Example 17

[0413] Except that the quantum dot composition of Comparative Example 13 was used, the light-emitting element was manufactured in the same manner as in Example 6.

[0414] Comparative Example 18

[0415] Except that the quantum dot composition of Comparative Example 14 was used, the light-emitting element was manufactured in the same manner as in Example 6.

[0416] Comparative Example 19

[0417] Except that the quantum dot composition of Comparative Example 15 was used, the light-emitting element was manufactured in the same manner as in Example 6.

[0418] To evaluate the characteristics of the light-emitting elements manufactured in the examples and comparative examples, the driving voltage was measured, and the results are shown in Table 2. The driving voltage, luminous efficiency, and lifetime of the quantum dot light-emitting elements were measured using a Keithley SMU 236 source meter and a PR650 luminance meter. The lifetime measurement was based on luminance as T. 90 At this time, T 90 This indicates the time required for the brightness to reach 90% of its initial brightness.

[0419] Table 2

[0420]

[0421] As can be seen from the results in Table 2, compared with the device in the comparative example, the device in the embodiment has a lower driving voltage and increased luminous efficiency and lifespan.

[0422] As described above, the present invention has been illustrated with reference to the embodiments shown in the accompanying drawings. However, these are merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent embodiments can be achieved. Therefore, the true scope of protection of the present invention should be determined by the technical concept of the claims.

Claims

1. A quantum dot complex, said quantum dot complex comprising quantum dots and ligands, wherein, The ligand includes a compound comprising an anchoring portion and a tail portion. The anchoring portion includes a part represented by any one of the following chemical formulas 1-1 to 1-5: In chemical formulas 1-1 to 1-5, * indicates a site that binds to the tail. The tail portion includes C 19 -C 30 Alkyl, C 19 -C 30 alkenyl, -OC 18 -C 30 Alkyl, -OC 18 -C 30 alkenyl, -NHC 18 -C 30 Alkyl or -NHC 18 -C 30 alkenyl, Based on the total weight of the content sub-point complex, the content of the ligand is less than 7.0 wt%.

2. The content sub-dot complex as described in claim 1, wherein, The anchoring portion of the ligand is connected to the surface of the quantum dot via covalent bonds, ionic bonds, or coordination bonds.

3. The content sub-dot complex as described in claim 1, wherein, The tail portion includes C 19 -C 30 alkenyl, -OC 18 -C 30 alkenyl or -NHC 18 -C 30 alkenyl, The C 19 -C 30 alkenyl, the -OC 18 -C 30 alkenyl groups and the -NHC group 18 -C 30 The double bonds included in the alkenyl group include trans bonds.

4. The content sub-dot complex as described in claim 1, wherein, The melting point of the ligand is below 30°C.

5. The content sub-dot complex as described in claim 1, wherein, The content sub-dot complex can be dispersed in nonpolar solvents.

6. The content sub-dot complex as described in claim 1, wherein, The ligand includes any one of the following compounds:

7. The content sub-dot complex as described in claim 1, wherein, The quantum dot has a core-shell structure, which includes: a core, including a semiconductor compound; and a shell, including an oxide of a metal, an oxide of a quasi-metal, or an oxide of a non-metal, a semiconductor compound, or a combination thereof.

8. The content sub-dot complex as described in claim 7, wherein, The semiconductor compounds include: group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV compounds; or any combination thereof.

9. The content sub-dot complex as described in claim 7, wherein, The oxides of the metal, the oxides of the metalloids, or the oxides of the nonmetals independently include SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof.

10. The content sub-dot complex as described in claim 7, wherein, The semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZ nSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN , InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs , InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, I nGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, AgInGaS2, CuInGaS2, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, SiC, SiGe or any combination thereof.

11. The content sub-dot complex as described in claim 7, wherein, The semiconductor compounds included in the shell include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

12. A quantum dot composition comprising the quantum dot complex according to any one of claims 1 to 11.

13. A light-emitting element, the light-emitting element comprising: First electrode; The second electrode is opposite to the first electrode; as well as An intermediate layer, disposed between the first electrode and the second electrode, includes a light-emitting layer. The intermediate layer comprises the content sub-dot complex as described in any one of claims 1 to 11.

14. The light-emitting element as claimed in claim 13, wherein, The luminescent layer includes the content sub-dot complex.

15. The light-emitting element as claimed in claim 13, wherein, The first electrode is the anode. The second electrode is the cathode. The intermediate layer further includes: a hole transport region disposed between the first electrode and the light-emitting layer and including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting auxiliary layer or any combination thereof; and / or an electron transport region disposed between the second electrode and the light-emitting layer and including a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof.

16. An electronic device comprising a light-emitting element as described in any one of claims 13 to 15.

17. The electronic device of claim 16, wherein, The electronic device also includes thin-film transistors. The thin-film transistor includes a source electrode and a drain electrode. The first electrode of the light-emitting element is electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

18. The electronic device of claim 16, further comprising: Display module, processor, memory, and power module.

19. The electronic device of claim 16, wherein, The electronic device includes an image display electronic device, a wearable electronic device, or a vehicle electronic device.

20. The electronic device of claim 16, wherein, The electronic device is one of the following: smartphone, tablet computer, laptop computer, television, desktop monitor, smart glasses, head-mounted display, smartwatch, car dashboard, central dashboard, central information display arranged in the car dashboard, and interior mirror display.

Images