Evaporation mask and method for manufacturing electronic devices

Abstract

The object of the present invention is to provide a vapor deposition mask that suppresses the occurrence of breakage, and a method for manufacturing an electronic device using the vapor deposition mask. The vapor deposition mask of the present invention is disposed between a substrate to be vapor-deposited and a vapor deposition source, for depositing vapor deposition material from the vapor deposition source onto the surface of the substrate through openings. It is characterized by comprising: a thin film having an opening region having a plurality of openings, and a surrounding region surrounding the opening region; and a support substrate supporting the thin film in the surrounding region, the side surface of the support substrate including a conical surface, the cone angle between the conical surface and the opposite surface of the thin film opposite the support substrate being less than 80°.

Description

[0001] This patent application is a divisional application of the patent application with application number 202480035638.0, application date November 14, 2024, entitled "Evaporation Mask and Method for Manufacturing Electronic Device". Technical Field

[0002] This invention relates to vapor deposition masks and methods for manufacturing electronic devices. Background Technology

[0003] For example, vapor deposition masks are known for being used in the fabrication of organic EL displays for the separation of RGB three colors.

[0004] Patent documents 1 and 2 disclose vapor deposition masks having a first layer (outer frame substrate) and a second layer (mask substrate). Multiple openings are formed in the second layer (mask substrate). The first layer (outer frame substrate) is a substrate that supports the second layer (mask substrate).

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: International Publication No. 2023 / 145955

[0008] Patent Document 2: Japanese Patent Application Publication No. 2022-175723 Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] The high precision required for vapor deposition masks necessitates thinner masks and high-precision processing, which leads to potential damage during operation or cleaning in the manufacturing process.

[0011] Patent documents 1 and 2 did not solve the above-mentioned problems by improving the shape of the first layer (outer frame substrate).

[0012] The object of the present invention is to provide a vapor deposition mask that suppresses the occurrence of breakage, and a method for manufacturing an electronic device using the vapor deposition mask.

[0013] Methods for solving problems

[0014] The vapor deposition mask of this embodiment is disposed between a substrate to be vaporized and a vapor deposition source, and is used to vaporize vapor deposition material from the vapor deposition source onto the surface of the substrate through openings. It is characterized by comprising: a thin film having an opening region having a plurality of openings and a surrounding region surrounding the opening region; and a support substrate supporting the thin film in the surrounding region, the side surface of which includes a conical surface, the cone angle between the conical surface and the surface parallel to the surface supporting the thin film being less than 80°.

[0015] The effects of the invention

[0016] According to the present invention, damage caused by operations or cleaning during the manufacturing process of vapor deposition masks can be suppressed, thereby improving the yield. Attached Figure Description

[0017] [ Figure 1 [Illustration 1] is a cross-sectional view showing an example of the vapor deposition mask of this embodiment.

[0018] [ Figure 2 ] is showing with Figure 1 A cross-sectional view of an example of a different vapor deposition mask.

[0019] [ Figure 3 [This is a magnified cross-sectional view of the support substrate of the vapor deposition mask.]

[0020] [ Figure 4 [Illustration 1] is a cross-sectional view showing a method for manufacturing an electronic device using the vapor deposition mask of this embodiment.

[0021] [ Figure 5 [This is a process diagram illustrating an example of a method for manufacturing a vapor deposition mask according to this embodiment.]

[0022] [ Figure 6 [This is a process diagram illustrating an example of a method for manufacturing a vapor deposition mask according to this embodiment.]

[0023] [ Figure 7 [Illustration 1] is a cross-sectional view showing an example of a vapor deposition mask of another embodiment.

[0024] [ Figure 8 [Illustration 1] is a cross-sectional view showing an example of a vapor deposition mask of another embodiment.

[0025] [ Figure 9 [Illustration 1] is a cross-sectional view showing an example of a vapor deposition mask of another embodiment.

[0026] [ Figure 10 [Illustration 1] is a cross-sectional view showing an example of a vapor deposition mask of another embodiment.

[0027] [ Figure 11 [] is a planar view of the mask for the experimental example.

[0028] [ Figure 12 (a) is an SEM image showing the support substrate used in the experiment, and (b) is a schematic diagram of (a).

[0029] [ Figure 13 (a) is an SEM image showing the support substrate used in the experiment, and (b) is a schematic diagram of (a).

[0030] [ Figure 14 (a) is a partially enlarged plan view of the vapor deposition mask used in the experiment, (b) is a partially cross-sectional view of the vapor deposition mask, and (c) is a perspective view showing the area near the supporting substrate of the thin film magnified. Detailed Implementation

[0031] Hereinafter, embodiments will be described with reference to the accompanying drawings. However, the drawings are schematic or conceptual, and the dimensions and ratios of each drawing may not be the same as the actual situation. Furthermore, even when the drawings represent the same parts, the dimensional relationships and ratios may sometimes differ. In particular, the embodiments shown below exemplify structures used to embody the technical concept of the present invention, rather than representing the specific technical concept of the present invention. It should be noted that in the following description, elements having the same function and structure are labeled with the same symbols, and repeated descriptions are omitted. Additionally, the lower and upper limits of the numerical ranges include error ranges.

[0032] <The Process of Invention>

[0033] Virtual reality / augmented reality (VR / AR) technology and related markets are growing rapidly. Furthermore, as this growth continues, display panels suitable for VR / AR are undergoing miniaturization, increasing pixel density (PPI), improving response speed, and expanding color gamut. With technological advancements, the widespread adoption of silicon-based organic light-emitting diode (OLED) microdisplay panels is becoming increasingly significant.

[0034] Silicon-based OLED microdisplay technology is poised for further miniaturization or higher PPI. Furthermore, to effectively prepare for high-value-added industries like AR and VR, ultra-high resolution displays exceeding 1000 ppi are expected. Consequently, the demand for vapor deposition masks used in RGB separation processes for OLED microdisplays is gradually increasing.

[0035] To achieve high precision in vapor deposition masks, it is necessary to reduce the thickness of the thin film with multiple openings and process it with high accuracy. However, when the film is thinned, it is prone to breakage due to bending or vibration, which can cause cracks to initiate from weak points. Therefore, problems arise, such as increased susceptibility to breakage during handling or cleaning in the vapor deposition mask manufacturing process, leading to reduced yield.

[0036] Therefore, the inventors conducted in-depth research and developed a vapor deposition mask that can suppress breakage by appropriately shaping the support substrate of the supporting film.

[0037] <Summary description of the vapor deposition mask 1 in this embodiment>

[0038] Figure 1 This is a cross-sectional view of the vapor deposition mask 1 of this embodiment. The vapor deposition mask 1 is a stacked structure of a thin film 2 and a support substrate 4. Figure 1 The vapor deposition mask 1 shown is preferably composed of an SOI (Silicon on Insulator) substrate 9, which includes an insulating layer 3 and a silicon substrate 30, supporting a substrate 4. Alternatively, Figure 1 The vapor deposition mask 1 shown is composed of an SOI substrate 9 comprising a thin film 2, an insulating layer 3, and a support substrate 4 (in this case, the support substrate 4 does not include the insulating layer 3). The support substrate 4 is, for example, a silicon substrate, but is not limited thereto. (The following will be discussed...) Figures 8-10 The embodiment is illustrated in a manner that supports substrate 4 / insulating layer 3 / film 2.

[0039] Thin film 2 is preferably a silicon single crystal layer, also known as a semiconductor layer or active layer.

[0040] like Figure 1 As shown, the vapor deposition mask 1 has multiple opening regions 15 and surrounding regions 16 around the opening regions 15, and a structure formed by stacking a thin film 2 and a support substrate 4 is formed in the surrounding regions 16. On the other hand, only the thin film 2 is disposed in the opening regions 15, that is, the support substrate 4 is removed. In addition, multiple tiny openings 5 ​​are formed in each opening region 15.

[0041] like Figure 1 As shown, the thin film 2 has a surface 2a and a back surface 2b that are opposite each other in the thickness direction. A support substrate 4 is provided on the back surface 2b side.

[0042] like Figure 4 As shown, surface 2a is the surface opposite to the substrate 10 to be vapor-deposited, and back surface 2b is the back surface opposite to the vapor deposition source 11.

[0043] like Figure 4 As shown, multiple openings 5 ​​are formed in the thin film 2, penetrating between the surface 2a and the back surface 2b. Figure 4As shown, the opening width of each opening 5 gradually narrows from the back surface 2b towards the surface 2a. Therefore, the sidewall surface 5a of the opening 5 is inclined. Furthermore, in Figure 4 In this context, the opening width W1 is defined by its width dimension along the surface direction of surface 2a. Thus, in... Figure 4 In the diagram, the opening width W1 is shown at the narrowest point. It should be noted that... Figure 4 In the diagram, the symbols for the opening width W1 and the side wall surface 5a are only illustrated for one opening 5, but the same applies to the other openings 5. Furthermore, the interval between adjacent openings 5 ​​is defined as the opening gap dimension W2. It should be noted that the opening gap dimension W2 is defined along the dimension of surface 2a.

[0044] Although not limited, the opening width W1 is about 1μm to 20μm, preferably 3μm or more and 15μm or less, and more preferably 5μm or more and 10μm or less.

[0045] In addition, although there is no limitation, the opening size W2 is about 1μm to 20μm, preferably 1μm or more and 15μm or less, and more preferably 3μm or more and 10μm or less.

[0046] The planar pattern of the openings 5 ​​(the shape seen from directly above the film 2 towards the surface 2a) should not be limited; for example, rectangles (including squares), polygons other than rectangles, circles, and ellipses can be examples. Furthermore, all openings 5 ​​can have the same planar pattern or some can be different. Additionally, the openings 5 ​​can be arranged regularly, irregularly, or a mixture of regular and irregular arrangements.

[0047] The outer periphery of the thin film 2 is preferably a rectangular or disk-shaped wafer. Although the diameter is not limited (the length of one side in the case of a rectangle), it is preferably about 100 mm to 500 mm. In this way, even if the diameter of the thin film 2 increases, each opening 5 can be formed uniformly.

[0048] The insulating layer 3 can be an oxide layer or a nitride layer, preferably an oxide layer, and more specifically, preferably a silicon oxide (SiO2) layer. The insulating layer 3 is also referred to as a BOX layer (Buried Oxide Layer). Although the thickness of the insulating layer 3 is not limited, it is, for example, about 100 nm to 20 μm.

[0049] Figure 1 The insulating layer 3 shown is not present in the opening region opposite to the opening 5 of the thin film 2 and is removed. On the back surface 2b of the thin film 2, the insulating layer 3 only remains in the area surrounding the opening region. The insulating layer 3 serves as an etching barrier layer for the thin film 2, and stable processing is possible by having the insulating layer 3.

[0050] like Figure 1 As shown, the support substrate 4, which includes the insulating layer 3 and the silicon substrate 30, can function as the columnar portion 16a and the outer peripheral frame 16b of the surrounding region 16 of the opening region 15 on the back side 2b of the thin film 2. Therefore, the thin film 2 can be maintained in a stretched state by the support substrate 4, without the need for tensioning treatment, and the vapor deposition mask 1 of this embodiment can also be made to fit tightly with the substrate 10 to be vapor deposited using an electrostatic chuck utilizing electrostatic force. It should be noted that, as Figure 1 As shown, the columnar portion 16a is located further inside than the outer peripheral frame 16b, and they are all of the same height. However, for example, the height of the columnar portion 16a could also be lower than that of the outer peripheral frame 16b. However, by making the heights consistent, higher strength can be maintained.

[0051] In addition, although Figure 1 Although not shown in the figure, alignment marks for position alignment can be formed in the outer peripheral region on the surface 2a side of the thin film 2. The alignment marks can be formed, for example, in a concave shape on the surface 2a, and can be formed to a depth extending to the insulating layer 3.

[0052] <Detailed Description of Supporting Substrate 4 in this Embodiment>

[0053] like Figure 1 As shown, the support substrate 4 has a first surface 4a opposite to the thin film 2 and a second surface 4b opposite to the first surface 4a. The first surface 4a is close to... Figure 4 The second surface 4b of the substrate 10 shown is close to the surface of the vapor-deposited substrate 10. Figure 4 The surface of one side of the vapor deposition source 11 shown.

[0054] like Figure 1 As shown, a side surface 4e is provided on the support substrate 4, connecting the edge portion 4c of the first surface 4a and the edge portion 4d of the second surface 4b. An opening region 15 of the thin film 2 is provided on the inner side surrounded by this side surface 4e.

[0055] like Figure 1 As shown, the side surface 4e is inclined in such a way that the width of the supporting substrate 4 gradually increases from the second side 4b to the first side 4a of the supporting substrate 4.

[0056] In this embodiment, the cone angle θ of side surface 4e is defined as the angle between the surface parallel to the surface supporting the thin film 2. The "surface supporting the thin film 2" refers to the back surface 2b of the thin film 2 and the first surface 4a of the supporting substrate 4. Figure 1In this design, the boundary surface between the silicon substrate 30 and the insulating layer 3 (referred to as "third surface 4f") is used as the "parallel surface". The "parallel surface" can also be any surface other than the third surface 4f, such as the first surface 4a, but it is preferable to use a surface where the cone angle θ is easily measured. Here, since the insulating layer 3 constituting the support substrate 4 is extremely thin compared to the silicon substrate 30, the cone angle θ is preferably measured using a side surface 4e of the silicon substrate 30 that can be clearly determined through SEM images, etc. Therefore, as... Figure 1 In this way, defining the cone angle θ by the angle between the third surface 4f of the silicon substrate 30 and the side surface 4e of the silicon substrate 30 can derive a more accurate angle.

[0057] Furthermore, in this embodiment, the cone angle θ of the side surface 4e is less than 80°. When the cone angle θ of the side surface 4e is 80° or more, during the mask shaking (up and down 3 times) in the cleaning process described later, the area subjected to water pressure during shaking is narrower compared to when the cone angle θ of the side surface 4e is less than 80°, thus the load applied per unit area becomes larger. As a result, the load applied to the edge portion 4c of the first surface 4a of the support substrate 4 becomes larger, and the film 2 is more prone to breakage. The cone angle θ is preferably 70° or less, more preferably 60° or less, further preferably 50° or less, further more preferably 40° or less, and further more preferably 30° or less. Although the lower limit value of the cone angle θ is not limited, it is preferably, for example, 5° or more or 10° or more.

[0058] It should be noted that, in Figure 1 In this embodiment, the side surface 4e preferably has a cone angle θ of less than 80°, but it can also be a partial offset angle. For example, in the portion of the insulating layer 3, the side surface can be a vertical surface or an inverted cone surface.

[0059] By tilting the side 4e of the support substrate 4 supporting the film 2, the concentration of force applied to the film 2 can be mitigated (dispersed) when the support substrate 4 is operated as a frame or during the cleaning process. As a result, damage such as cracks between the openings 5 ​​of the film 2 can be suppressed, and the yield can be improved.

[0060] Figure 2 It is shown that... Figure 1 A cross-sectional view of an example of a different vapor deposition mask. Figure 3 This is a magnified cross-sectional view of the support substrate of the vapor deposition mask.

[0061] exist Figure 1 In the middle, the side 4e of the supporting substrate 4 is inclined at a generally constant cone angle θ from the second side 4b to the first side 4a, but in Figure 2 In the middle, the side surface 4e is formed by the first conical surface 6 and the second conical surface 7. For example... Figure 2 As shown, the cone angles between the first cone surface 6 and the second cone surface 7 and the first surface 4a are different. Figure 2 In the diagram, the first cone angle of the first cone surface 6 is represented by θ1, and the second cone angle of the second cone surface 7 is represented by θ2. For example... Figure 2 As shown, cone angle θ1 > cone angle θ2. Moreover, the second cone surface 7 with a smaller cone angle θ2 is formed on the side closer to the thin film 2 (the side in contact with the insulating layer 3) than the first cone surface 6.

[0062] like Figure 2 As shown, the first cone angle θ1 is approximately 90°, therefore, the first cone surface 6 is approximately vertical. Hereinafter, the first cone surface 6 will sometimes be referred to as "vertical surface 6". "Approximately" includes an error of up to 5%. The first cone angle θ1 may not be approximately 90°, but is preferably approximately 90° or close to it.

[0063] On the other hand, with Figure 1 Similarly, the second cone angle θ2 is preferably less than 80°, more preferably less than 70°, even more preferably less than 60°, even more preferably less than 50°, even more preferably less than 40°, and even more preferably less than 30°.

[0064] In this way, the cone angle of the side 4e of the supporting substrate 4 is formed by two or more segments, and the cone angle is smaller the closer it is to the thin film 2, thereby reducing the width between cells and improving the surface mounting efficiency into the mask. Figure 14 (a) shows a partially enlarged plan view of the vapor deposition mask 1 used in the experiment described later. Figure 14 (a) shows the cells 8 arranged in a matrix. Cells 8 have multiple openings 5 ​​in the x and y directions. It should be noted that... Figure 14 (a) Representatively, only one unit 8 and opening 5 are marked with symbols. A columnar portion 16a supporting the substrate 4 is disposed on the back side between units 8 (see also...). Figure 1 , Figure 2 ). Figure 14 (b) is extraction Figure 14 (a) shows a partial cross-sectional view of one of the units 8.

[0065] Reducing the spacing of the units 8 means reducing the width of the columnar portion 16a of the supporting substrate 4. Here, in order to further improve the breakage suppression effect, it is desirable to minimize the second cone angle θ2 of the second cone surface 7 on the side of the thin film 2. However, when a single cone surface ( Figure 1 When constructing the structure, it should not be formed with an excessively gentle inclination. Therefore, by forming the first cone surface away from the film 2 from the vertical surface 6 or a cone surface with a high cone angle close to it, and further reducing the second cone angle θ2 of the second cone surface 7 close to the film 2, it is possible to improve the damage suppression effect while reducing the spacing of the units 8.

[0066] Figure 3(a) is a partially enlarged schematic diagram showing a portion of the support substrate 4 in this embodiment. Figure 3 In (a), with Figure 2 Similarly, the side surface 4e of the support substrate 4 is composed of a first conical surface 6 and a second conical surface 7 with different cone angles. The first conical surface (vertical surface) 6 with a high cone angle is located on the side away from the thin film 2, and the second conical surface 7 with a low cone angle is formed on the side closer to the thin film 2. The vertical surface 6 and the second conical surface 7 are formed continuously.

[0067] like Figure 3 As shown in (a), the height dimension (= the height dimension of the support substrate 4) extending vertically from the second surface 4b to the first surface 4a is defined as t1. Furthermore, the height dimension of the second conical surface 7 is defined as t2, which is the height dimension of the vertical surface v obtained by extending vertically from the inflection point p of the first conical surface 6 and the second conical surface 7 to the first surface 4a. Additionally, the protruding width of the second conical surface from the vertical surface v is defined as w.

[0068] In this embodiment, t2 / t1 is preferably 0.3 or more and less than 0.85. Furthermore, w / t2 is preferably 0.4 or more and 1.4 or less. Therefore, regardless of the height dimension t1 of the support substrate 4, the strength of the support substrate 4 can be improved, and the contact area towards the thin film 2 can be ensured, thereby improving the breakage suppression effect. Here, when the side surface 4e is composed of three or more conical surfaces, the conical surface that is closest to the thin film 2 is the one that is subject to t2 / t1 and w / t2.

[0069] Figure 3 (b) The side 4e of the support substrate 4 shown is also with Figure 3 (a) Similarly, it is formed by the first conical surface (vertical surface) 6 and the second conical surface 17, but with Figure 3 (a) The difference is that the second cone 17 is formed in a concave shape rather than in a straight line. In this way, by forming the second cone 17 in a concave shape, the second cone angle θ2 can be further reduced, that is, the second cone 7 can be formed in a more gentle shape.

[0070] Here, in Figure 3 In (b), regarding the second cone angle θ2 of the second cone surface 17, a tangent line L tangent to the second cone surface 17 can be drawn from the edge portion 4c of the first surface 4a, and the second cone angle θ2 is determined by the angle between the first surface 4a and the tangent line L. In this case, the second cone angle θ2 of the second cone surface 17 formed by the concave surface is 50° or less, preferably 30° or less, and more preferably 10° or less.

[0071] exist Figure 3 In this paper, the first surface 4a is used as the reference surface for the height dimensions t1, t2 and the protrusion width w, but the third surface 4f of the silicon substrate 30 (see reference) can also be used. Figure 2(etc.) are used as reference planes to measure the height dimensions t1, t2, and the protrusion width w. In particular, in Figure 3 In configuration (b), the measurement of the second cone angle θ2 is sometimes more clearly and easily performed on the side of the silicon substrate 30, therefore it is preferable to measure the portion after removing the insulating layer 3. Since the insulating layer 3 is extremely thin, the above-mentioned value range will not change even if t2 / t1 and w / t2 are measured only by the silicon substrate 30 after removing the insulating layer 3.

[0072] In addition, in this embodiment, such as Figure 2 As shown, the distance D from the edge 4c of the first surface 4a on the side of the thin film 2 of the supporting substrate 4 to the opening 5 of the thin film 2 closest to the edge 4c is preferably 30 μm or more and 100 μm or less. This distance D is the distance in the horizontal direction (the direction of the surface parallel to the first surface 4a).

[0073] When the distance D is too small, damage is easily caused during the process of forming multiple openings 5 ​​in the thin film 2, especially due to the effects of cleaning and other processes in the manufacturing process. On the other hand, when the distance D is too large, the width of the columnar portion 16a and the outer peripheral frame 16b constituting the support substrate 4 becomes small and thin, thus failing to maintain strength. Therefore, from the viewpoint of damage suppression and strength, the distance D is set to 30 μm or more and 100 μm or less. In this configuration, the side surface 4e of the support substrate 4 only needs to have an inclined conical surface, and the cone angle is not limited, but... Figure 1 , Figure 2 As explained, it is preferred to be less than 80°, more preferably 70° or less, even more preferably 60° or less, even more preferably 50° or less, even more preferably 40° or less, and even more preferably 30° or less.

[0074] The vapor deposition mask 1 of this embodiment described in detail above can independently exist as the following invention.

[0075] (1) The invention in which the side surface 4e of the support substrate 4 includes a conical surface with a cone angle θ less than 80° between the surface parallel to the surface of the support film 2 (see reference). Figure 1 ).

[0076] (2) The side surface 4e of the support substrate 4 has at least a first conical surface 6 and a second conical surface 7 with different cone angles between the surfaces parallel to the surface of the support film 2, the cone angle of the second conical surface 7 being smaller than that of the first conical surface 6 and formed on the side close to the film 2, and the cone angle θ2 of the second conical surface being less than 80° (see the invention). Figure 2 , Figure 3 ).

[0077] (3) The side surface 4e of the support substrate 4 has at least a first conical surface 6 and a second conical surface 7 with different cone angles between the surfaces parallel to the surface of the support film 2. The second conical surface 7 is formed on the side closer to the film 2 than the first conical surface 6. When the height dimension of the support substrate 4 is set to t1, the height dimension of the second conical surface 7 is set to t2, and the protrusion width of the second conical surface 7 is set to w, t2 / t1 is 0.3 or more and less than 0.85, and w / t2 is 0.4 or more and less than 1.4 (see the invention mentioned above). Figure 3 ).

[0078] (4) The side surface 4e of the support substrate 4 includes a conical surface, and the distance D between the edge portion 4c of the side of the support substrate 4 opposite to the thin film 2 and the opening 5 closest to the support substrate 4 is 30 μm or more and 100 μm or less (see the invention mentioned above). Figure 2 , Figure 14 ).

[0079] It should be noted that in this embodiment, multiple inventions (1) to (4) described above can be combined. For example, invention (2) and invention (3) can be combined, or invention (1) and invention (4) can be combined.

[0080] <Regarding the relationship between thin film 2 and supporting substrate 4>

[0081] like Figure 1 As shown, the sidewalls 5a of the multiple openings 5 ​​formed in the thin film 2 are inclined, and the cone angle of these sidewalls 5a is set as θ3. Figure 1 As shown, the cone angle θ3 of the opening 5 is defined as the angle between the surface 2a of the thin film 2 (the surface opposite to the substrate being deposited) and the sidewall surface 5a. This cone angle θ3 is different from the cone angle θ of the side surface 4e of the supporting substrate 4. It should be noted that the cone angle of the supporting substrate 4 compared with the cone angle θ3 is as follows: Figure 2 , Figure 3 In the case where side 4e is formed by multiple cones, the cone closest to the side of film 2 (in) Figure 2 , Figure 3 The cone angle θ2 of the second cone surface (7, 17) is compared.

[0082] Furthermore, the cone angle θ3 of the opening 5 of the thin film 2 is preferably greater than the cone angles θ and θ2 of the side surface 4e of the supporting substrate 4.

[0083] In ultra-high resolution displays, the narrow aperture spacing limits the reduction of the cone angle θ3. Although not limited, the cone angle θ3 of the aperture 5 is in the range of 80° or more and less than 90°. On the other hand, in order to improve the breakage suppression effect, the cone angles θ and θ2 of the side surface 4e of the support substrate 4 are preferably small, and it is desirable to control them so that the cone angles θ and θ2 are less than the cone angle θ3.

[0084] Furthermore, in this embodiment, the film 2 and the support substrate 4 have different thicknesses. Specifically, the film 2 is thinner than the support substrate 4. While there is no upper limit to the thickness of the film 2, it is preferably 10 μm or less, and more preferably 5 μm or less. Due to its thinness, the evaporation efficiency is improved, and it is easier to achieve high precision. In addition, while there is no lower limit to the thickness of the film 2, from the viewpoints of processability and durability, it is preferably 1 μm or more.

[0085] On the other hand, the thickness of the support substrate 4 (equivalent to) Figure 3 (a) The height dimension t1 shown is, for example, about 100 μm to 1000 μm. In the support substrate 4, the silicon substrate 30 accounts for the majority, and the silicon substrate 30 accounts for about 80% or more, preferably about 90% or more, more preferably about 95% or more, and even more preferably 99% or more of the height dimension t1.

[0086] Considering the pattern accuracy (rectangularity) and evaporation efficiency of the vapor-deposited film 13 formed on the vapor-deposited substrate 10 via the vapor deposition mask 1, the thickness of the thin film 2 is preferably thinner. On the other hand, considering mask strength and support stability for the thin film 2, the support substrate 4 is preferably thicker. Therefore, it is preferable to control the thickness of the support substrate 4 to be greater than the thickness of the thin film 2.

[0087] As mentioned above, the thickness of the thin film 2 is preferably thin, but the thinner it is, the more easily it is damaged. When the thickness of the thin film 2 is less than 5 μm, the impact of damage is particularly large. Therefore, it is preferable to minimize the cone angle θ of the side surface 4e of the supporting substrate 4; or to form it from multiple cone surfaces with different cone angles. Figure 3 (a) shown side 4e; or as shown Figure 3 As shown in (b), a concave surface is formed into a conical surface, thereby improving the damage suppression effect.

[0088] <Regarding the manufacturing method of the vapor deposition mask 1 in this embodiment>

[0089] Figure 5 This is a process diagram illustrating the first manufacturing method of the vapor deposition mask 1 according to this embodiment. Here, Figure 5 and the following Figure 6 The vapor deposition mask 1 shown in the manufacturing process only shows the vicinity of a certain opening area 15, but in reality, it forms simultaneously. Figure 1 The multiple opening regions 15 are shown. Figure 5 In (a), an SOI substrate 9 is prepared. The SOI substrate 9 is composed of a stacked structure of a thin film 2, an insulating layer 3, and a silicon substrate 30 (the insulating layer 3 and the silicon substrate 30 are combined to form a support substrate 4). The material and thickness of each layer, etc., are specified in [the diagram / section]. Figure 1 Please refer to those instructions.

[0090] It should be noted that, in the case of SOI substrate 9, although the diameter is not limited, it can be up to about 500 mm in this embodiment.

[0091] exist Figure 5 In (b), a mask layer 14 is patterned on the surface of the thin film 2. The mask layer 14 is preferably a photoresist, which can be patterned by exposure and development. A plurality of through holes 14a are formed in the mask layer 14. The through holes 14a are opening patterns used to form openings 5 ​​in the thin film 2.

[0092] Next, in Figure 5 In (c), the thin film 2 exposed from the through-hole 14a of the mask layer 14 is dry-etched. For example, in this embodiment, the thin film 2 is deeply-etched. In the so-called Bosch process, for example, the following method is preferred: repeatedly etching Si using SF6 and forming a polymer film using C4F8 to deeply etch silicon, such that sidewall protection and bottom etching are alternated.

[0093] At this point, the composition and flow rate of the etching gas, the internal pressure of the etching chamber, and the power of the high-frequency power supply should be adjusted appropriately to achieve the desired effect. Figure 5 (c) shows the formation of an inverted cone surface.

[0094] For example, in a dry etching apparatus, SF6 and C4F8 gases are used alternately to perform the Bosch process. Anisotropic dry etching using fluoride ions is performed by using the same gases as in the following mode: isotropic dry etching using fluoride radicals is performed with SF6 gas, and an anisotropic dry etching using fluoride ions is performed by applying a bias voltage to the substrate to be etched. For example, the processing conditions are set as follows: SF6 gas 0–500 sccm, C4F8 gas 0–300 sccm, Platen LF 0–1500 W, Coil RF 300–1500 W, and chamber pressure 1–10 Pa, and various conditions are adjusted.

[0095] Through the Bosch process described above, multiple openings 5 ​​can be formed at the depth of the thin film 2. At this time, the cone angle θ3 of the sidewall surface 5a of the opening 5 can be adjusted appropriately.

[0096] Next, in Figure 5 In the process shown in (d), the mask layer 14 is removed. Thus, an SOI substrate 9 with multiple openings 5 ​​formed on the thin film 2 is completed.

[0097] Next, in Figure 5 In the process shown in (e), a protective layer 20 is formed on the surface of the thin film 2. This provides adequate protection for the entire surface of the thin film 2. While not limited to a single type, the protective layer 20 may be, for example, a photoresist film.

[0098] Next, in Figure 5 In the process shown in (f), a mask layer 21 is formed on the surface of the silicon substrate 30, which corresponds to the back side of the SOI substrate 9. Although not limited, the mask layer 21 is a resist pattern. Figure 5 As shown in (f), the mask layer 21 is not formed in the opening region 15 opposite to the opening 5 formed in the thin film 2 in the thickness direction, but is only disposed in the surrounding region 16 (see also) Figure 1 It should be noted that it is also possible to... Figure 5 (b) In the process of forming mask layer 21 together with mask layer 14.

[0099] Then, in Figure 5 In the process shown in (g), for example, the silicon substrate 30 not covered by the mask layer 21 is removed by dry etching. Figure 5 In the process shown in (h), the insulating layer 3 exposed by the removal of the silicon substrate 30 is removed by wet etching. At this time, the thin film 2 is not affected by the wet etching and maintains the shape with multiple openings 5.

[0100] Then, in Figure 5 In the process shown in (i), the protective layer 20 and the mask layer 21 are removed. Thus, the vapor deposition mask 1 is completed.

[0101] Figure 6 This is a process diagram illustrating the second manufacturing method of the vapor deposition mask 1 according to this embodiment. Figure 6 In (a), an SOI substrate 9 is prepared. The SOI substrate 9 is composed of a stacked structure of a thin film 2, an insulating layer 3, and a silicon substrate 30. The material and thickness of each layer are specified in [the diagram / section]. Figure 1 Please refer to those instructions.

[0102] It should be noted that, in the case of SOI substrate 9, although the diameter is not limited, it can be up to about 500 mm in this embodiment.

[0103] Next, in Figure 6 In the process shown in (b), a mask layer 21 is formed on the surface of the silicon substrate 30, which corresponds to the back side of the SOI substrate 9. Although not limited, the mask layer 21 is a resist pattern. Figure 5 (f) Similarly, a mask layer 21 is provided only in the area surrounding the SOI substrate 9.

[0104] Next, in Figure 6 In the process shown in (c), for example, the silicon substrate 30 not covered by the mask layer 21 is removed by dry etching. Figure 6 In the process shown in (d), the insulating layer 3 exposed due to the removal of the silicon substrate 30 is removed by wet etching.

[0105] Next, in Figure 6In step (e), a mask layer 22 is formed on the back side of the thin film 2. While not limited, the mask layer 22 can be formed using a resist pattern. Figure 6 As shown in (e), multiple openings 22a are patterned in the mask layer 22 by exposure and development.

[0106] Next, in Figure 6 In step (f), the thin film 2 exposed from the opening 22a is etched. This etching process is a dry etching process, although it is not limited, but it is preferable to use an etching gas containing fluorine compounds and oxygen, and further, depending on the circumstances, a rare gas.

[0107] Fluorine compounds can be selected from one or more of CF4, SF6, NF3, BF3, PF5 and F2. In addition, rare gases can be selected from one or more of helium or argon.

[0108] For example, in a dry etching apparatus, CF4 gas, O2 gas, and Ar gas are used for etching. The processing conditions are set as follows: CF4 gas 10–100 sccm, O2 gas 0–100 sccm, Ar gas 0–200 sccm, IPC power 200–1000 W, RIE power 0–1000 W, and chamber pressure 1–10 Pa, and various conditions are adjusted.

[0109] exist Figure 6 In step (f), an opening 5 can be formed in the thin film 2 whose width gradually decreases as it moves away from the mask layer 22 (towards the surface 2a of the thin film 2). Thus, the sidewall 5a of the opening 5 can be formed from the conical surface. Then, in Figure 6 In step (g), the mask layer 22 is removed. Thus, the vapor deposition mask 1 is completed.

[0110] exist Figure 5 (g) and Figure 6 In the process shown in (c), although the method of forming the side surface 4e of the silicon substrate 30 constituting the support substrate 4 by a conical surface is not limited, etching is performed, for example, in a dry etching apparatus, using CF4 gas, O2 gas and Ar gas. Fluorine compounds can be selected from one or more of CF4, SF6, NF3, BF3, PF5 and F2, and rare gases can be selected from one or more of helium or argon.

[0111] The processing conditions were set as follows: CF4 gas 10–100 sccm, O2 gas 0–100 sccm, Ar gas 0–200 sccm, IPC power 200–1000 W, RIE power 0–1000 W, and chamber pressure 1–10 Pa, and various conditions were adjusted. As a result, the side surface 4e of the silicon substrate 30 can be formed from the conical surface.

[0112] In addition, such as Figure 3 As shown in (a) and (b), when the side surface 4e of the support substrate 4 is formed by the combination of the first conical surface (vertical surface) 6 and the second conical surfaces 7 and 17, it can be achieved, for example, by combining the vertical process and the dry etching process described above.

[0113] As a vertical process, such as in a dry etching apparatus, the Bosch process is implemented by alternating the use of SF6 and C4F8 gases. Anisotropic dry etching using fluoride ions is implemented by using the same gases as in the following mode: isotropic dry etching using fluoride radicals is performed with SF6 gas, and an anisotropic dry etching using fluoride ions is performed by applying a bias voltage to the substrate to be etched. For example, the processing conditions are set as follows: SF6 gas 0–500 sccm, C4F8 gas 0–300 sccm, Platen LF 0–1500 W, Coil RF 300–1500 W, and chamber pressure 1–10 Pa, with various conditions adjusted.

[0114] Alternatively, the vertical process and wet etching process described above can be combined.

[0115] As a wet etching process, for example, a mixture of hydrofluoric acid, nitric acid, and acetic acid or electrolytic etching with hydrofluoric acid are used; anisotropic etching with potassium hydroxide and TMAH is used to obtain the desired angle. As an example, a mixture of hydrofluoric acid, nitric acid, and acetic acid is used for treatment, and the treatment temperature is set to 20°C to 40°C.

[0116] Alternatively, by combining the above-mentioned dry etching process and wet etching process, or by changing the etching conditions during the dry etching process, it is possible to form the side surface 4e of the support substrate 4 from multiple cone surfaces with different cone angles.

[0117] It should be noted that, in Figure 5 (h) and Figure 6 In (d), during the process of removing the insulating layer 3 constituting the support substrate 4, the side surface of the remaining insulating layer 3 is easily formed to mimic the cone angle of the silicon substrate 30. However, depending on the conditions, the side surface of the insulating layer 3 is sometimes formed as a roughly vertical surface and sometimes as an inverted cone surface. Furthermore, the insulating layer 3 is extremely thin compared to the silicon substrate 30, making it sometimes difficult to determine the side surface of the insulating layer 3. Therefore, as... Figure 1 and Figure 2 As shown, the cone angles θ and θ2 of the side surface 4e of the support substrate 4 are preferably measured using the angle of the side surface 4e of the silicon substrate 30.

[0118] According to the manufacturing method of this embodiment, the cone angles θ and θ2 of the side surface 4e of the support substrate 4 can be adjusted to be less than 80°.

[0119] Furthermore, in this embodiment, it is preferable to control the above etching conditions so that when the height dimension of the vertically extended direction from the second surface 4b of the support substrate 4 to the first surface 4a is set to t1, the height dimension of the second conical surface 7 is set to t2, and the protrusion width of the second conical surface 7 is set to w, t2 / t1 is 0.3 or more and less than 0.85, and w / t2 is 0.4 or more and less than 1.4.

[0120] In addition, in this embodiment, such as Figure 2 As shown, it is preferable to adjust the above etching conditions so that the distance D between the edge portion 4c of the first surface 4a of the support substrate 4 and the opening 5 closest to the support substrate 4 is 30 μm or more and 100 μm or less.

[0121] <Method for manufacturing electronic devices according to this embodiment>

[0122] In this embodiment, such as Figure 4 As shown, a vapor deposition mask 1 is positioned between the substrate 10 to be vapor-deposited and the vapor deposition source 11. At this time, the surface 2a side of the thin film 2 of the vapor deposition mask 1 faces the substrate 10 to be vapor-deposited, and the back surface 2b side of the thin film 2 faces the vapor deposition source 11. A plurality of openings 5 ​​are formed in the thin film 2, with the opening width narrower on the substrate 10 side than on the vapor deposition source 11 side.

[0123] The vapor deposition mask 1 is placed on the support (not shown) of the vapor deposition apparatus. At this time, the vapor deposition mask 1 and the substrate 10 to be vapor-deposited can be fixed by an electrostatic chuck. The vapor deposition mask 1 and the substrate 10 to be vapor-deposited are rotated about the axis center of the support.

[0124] Evaporation material (evaporation particles) 12 from evaporation source 11 reaches the surface 10a of the substrate 10 to be evaporated through the opening 5 of evaporation mask 1, so that evaporation film 13 is formed.

[0125] In this embodiment, examples of electronic devices include OLED microdisplay panels, liquid crystal panels, and solar cells, and the method for manufacturing OLED microdisplay panels as organic electronic devices is particularly applicable.

[0126] While the embodiments and variations have been described above, other embodiments may also be achieved by combining the above embodiments and variations in whole or in part.

[0127] Furthermore, the present invention is not limited to the above-described embodiments and modifications, and various changes, substitutions, and modifications can be made without departing from the spirit of the technical concept. In addition, if the technical concept can be implemented in another way according to technological advancements or derived technologies, this method can also be used. Therefore, the claims cover all embodiments that can be included within the scope of the technical concept.

[0128] to and Figure 1 The embodiments of the vapor deposition mask 1 with different layer configurations will be described.

[0129] Figure 1 The vapor deposition mask 1 shown is formed from an SOI substrate, but for example, as Figure 7 As shown, the film 31, such as SiN or SiO2, can also be formed on the surface of a frame-shaped silicon substrate 30, and a plurality of openings 32 can be formed in the film 31 in the central region where the silicon substrate 30 has been removed. The film can be formed by CVD, but from the viewpoint of easy stress control, SiN is preferred.

[0130] Figure 7 The silicon substrate 30 shown constitutes the support substrate of this embodiment, and preferably has at least one of the above-described inventions (1) to (4). As a result, the damage suppression effect can be improved.

[0131] exist Figures 8 to 10 In other embodiments shown, with Figure 1 The same SOI substrate 9 is used, but in Figure 8 In the process, a SiN layer 33 is formed on the back side of the SOI substrate 9 (the side supporting the substrate 4, the side opposite to the evaporation source 11). Figure 9 In the process, a SiN layer 33 is formed on the surface side of the SOI substrate 9 (the side of semiconductor layer 2, the side opposite to the substrate 10 to be deposited). Figure 10 In this configuration, SiN layers 33 are formed on both the back side and the surface side of the SOI substrate 9. In the configuration where the SiN layer 33 is formed on the surface side (semiconductor layer 2 side) of the SOI substrate 9, as follows... Figure 9 and Figure 10 As shown, openings 5 ​​are formed continuously together with semiconductor layer 2.

[0132] By setting the SiN layer 33, stress control of the vapor deposition mask can be easily achieved, and strain can be suppressed.

[0133] Furthermore, the SiN layer 33 formed on the surface side of the SOI substrate 9 is preferably thinner than the SiN layer 33 formed on the back side of the SOI substrate 9. Although not limited, the film thickness of the SiN layer 33 formed on the surface side of the SOI substrate 9 is about 0.05 μm to 0.5 μm, and the film thickness of the SiN layer 33 formed on the back side of the SOI substrate 9 is about 0.05 μm to 3 μm. Since the semiconductor layer 2 is thinner than the support substrate 4, and multiple openings 5 ​​are formed in the semiconductor layer 2, the SiN layer 33 formed on the surface side of the SOI substrate 9 is formed thinner than the SiN layer 33 formed on the back side of the SOI substrate 9 in order to control stress evenly on both the surface and back sides.

[0134] Furthermore, at least one of the supporting substrate 4 and the thin film 2 can be a polycrystalline silicon structure. Therefore, since polycrystalline silicon does not have a defined cleavage plane, it is less prone to fracture in the cleavage direction compared to using monocrystalline silicon which has cleavage planes.

[0135] Furthermore, fabricating large substrates from monocrystalline silicon is technically difficult, but by making the evaporation mask 1 a polycrystalline silicon structure, it is easy to form silicon substrates larger than monocrystalline silicon substrates. Additionally, by making the planar shape of the evaporation mask 1 polygonal (e.g., quadrilateral), compared to making the evaporation mask 1 circular, chamfering efficiency can be improved, and the number of facets can also be increased. It should be noted that the large-size silicon substrate is preferably 500mm × 500mm or larger.

[0136] Example

[0137] The effects of the present invention will be described below through embodiments and comparative examples. It should be noted that the present invention is not limited to any of the following embodiments.

[0138] like Figure 11 As shown, 30 cells were formed within the vapor deposition mask to confirm the damage caused by cleaning.

[0139] The vapor deposition mask used is an SOI substrate, which consists of a silicon substrate (675 μm), an insulating layer (0.5 μm), and a thin film (4 μm). Thicknesses are indicated in parentheses. The thin film is a Si layer, and the insulating layer is a SiO2 layer. It should be noted that the silicon substrate and the insulating layer are combined to form a support substrate for the supporting thin film. The outer diameter of the SOI substrate is 200 mm.

[0140] In the thin film, multiple openings with an opening width of 5–10 μm are formed in each unit. Additionally, the side surface 4e of the support substrate 4 is composed of… Figure 1 The taper shown is 1 segment or Figure 3 (a) and Figure 3 (b) shows the formation of the two taper segments. The taper angle was observed and measured using SEM. The apparatus used for measurement was a SU3500 manufactured by Hitachi High-Technologies Corporation.

[0141] In the experiment, the cleaning was repeated using Experiment 1 to Experiment 10 with different cone angles to confirm the damage status of 30 units within the mask.

[0142] Figure 12 (a) is a SEM image of the support substrate in Experiment Example 5. Figure 12 (b) is its schematic diagram. For example... Figure 12As shown in (b), in Experimental Example 5, the surface is formed by two inclined sections: a vertical surface and a conical surface, with the conical surface being concave. Furthermore, the cone angle θ2 of the conical surface is 10°. Additionally, Figure 13 (a) is a SEM image of the support substrate in Experiment Example 8. Figure 13 (b) is its schematic diagram. For example... Figure 13 As shown in (b), in Experiment 8, the cone is formed by two inclined sections: a vertical plane and a conical surface, with the conical surface being approximately straight. Furthermore, the cone angle θ2 is 60°. It should be noted that in this experiment, as... Figure 2 As shown, the cone angle θ2 of the side surface of the silicon substrate was measured.

[0143] Cleaning is performed by placing the vapor deposition mask vertically (with the direction orthogonal to the mask thickness direction along the vertical direction). One cycle consists of sulfuric acid immersion, pure water immersion, and mask shaking (up and down 3 times), and this cycle is repeated 5 times.

[0144] The condition of being unable to function as a vapor deposition mask, such as peeling or cracking, is defined as "damage". The presence or absence of cracks is confirmed by visual inspection or microscopic observation, thereby evaluating whether there is damage.

[0145] The experimental results of Examples 1 to 10 are shown in Table 1 below.

[0146]

[0147] As shown in Table 1, Experiments 1 through 3 are... Figure 1 The diagram shows a slanted shape. In Experiment 4, the entire side of the supporting substrate is a vertical surface. Experiments 5 through 10 are... Figure 3 The two inclined shapes shown in (a) and (b) are both combinations of vertical and conical surfaces.

[0148] Regarding the "judgment" shown in Table 1, cases with a breakage rate of less than 2% are marked as ◎, cases with a breakage rate of more than 2% but less than 5% are marked as ○, cases with a breakage rate of more than 5% but less than 10% are marked as △, and cases with a breakage rate of more than 10% are marked as ×.

[0149] As shown in Table 1, in the experimental cases with a cone angle of 80° to 90°, the breakage rate was very high, and was therefore marked as ×. Therefore, based on these experimental results, the preferred cone angle is set to less than 80°, and the more preferred cone angle is set to less than 70°.

[0150] Furthermore, by forming two inclined sections, the breakage rate can be effectively reduced. In particular, by setting a portion of the vertical surface, such as... Figure 12 As shown, it is easy to reduce the cone angle θ2. In addition, when the cone angle is 10° to 30°, it becomes a very gentle cone surface, which can make the breakage rate about 0%.

[0151] Next, as shown in Table 2, the distance D, opening width W1, and opening size W2 were adjusted appropriately, and the breakage rate was measured.

[0152] It should be noted that the experimental example with a cone angle of 30° in Table 2 was fabricated using a combination of dry etching and wet etching processes to achieve the desired result. Figure 2 The second cone angle θ2 shown is a two-segment shape of 30°. Regarding the experimental example with a cone angle of 60° in Table 2, it was fabricated using only a dry etching process to become... Figure 1 The slanted shape shown.

[0153] like Figure 14 As shown, distance D refers to the distance from the edge 4c of the first surface 4a on the side of the thin film 2 supporting the substrate 4 to the opening 5 of the thin film 2 closest to that edge 4c. Figure 14 As shown in (b), the opening width W1 refers to the width dimension of the opening 5 along the surface 2a of the film 2. In addition, the opening spacing dimension W2 refers to the distance between the openings on the surface 2a of the film 2.

[0154] The cleaning method was the same as that used in Table 1. As an evaluation of the cleaning process, after cleaning, the cracks and breaks that occurred at 40 openings near the support substrate were observed under a microscope, and the breakage rate was calculated. The experimental results are shown in Table 2 below.

[0155]

[0156] As shown in Table 2, in Experiments 11 to 14, the breakage rate was higher than 10% when the distance D was 10 μm, and was therefore judged as ×. That is, when the distance D is too close, breakage or cracks are easily generated due to the influence of cleaning and other processes in the manufacturing process.

[0157] Therefore, in this embodiment, the distance D is set to be between 30 μm and 100 μm. Furthermore, it is preferred that the opening width is approximately 5–10 μm and the opening spacing is approximately 3–10 μm.

[0158] This application is based on Japanese Special Petition 2023-195185, filed on November 16, 2023. Its entire contents are contained herein.

Claims

1. A vapor deposition mask, which is disposed between a substrate to be vapor-deposited and a vapor deposition source, for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate to be vapor-deposited through an opening, characterized in that it comprises: A thin film having: a plurality of opening regions having a plurality of said openings, and a surrounding region surrounding each opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion includes a conical surface with a cone angle of less than 80° between the surface parallel to the surface supporting the film. The outer frame and the columnar portion are formed at the same height. The vapor deposition mask is configured such that a thin film having the opening is supported on a silicon substrate, which serves as the support substrate; or the support substrate has an insulating layer and a silicon substrate, with the insulating layer positioned between the silicon substrate and the thin film. The thin film is composed of SiN.

2. A vapor deposition mask, which is disposed between a substrate to be vapor-deposited and a vapor deposition source, for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate to be vapor-deposited through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion includes a conical surface with a cone angle of less than 80° between the surface parallel to the surface supporting the film. The outer frame and the columnar portion are formed at the same height. The evaporation mask is formed from an SOI substrate, which has the thin film, the supporting substrate, and an insulating layer formed between the thin film and the supporting substrate. A SiN layer is formed on the side of the thin film where the opening is formed, i.e., the surface side, or the side of the supporting substrate where the evaporation source is formed, i.e., the back side, or both the surface side and the back side.

3. The vapor deposition mask according to claim 1 or claim 2, characterized in that, The cone angle is less than 70°.

4. The vapor deposition mask according to claim 1 or claim 2, characterized in that, The cone angle is less than 60°.

5. The vapor deposition mask according to claim 1 or claim 2, characterized in that, The conical surface is formed by a concave surface.

6. A vapor deposition mask, which is disposed between a substrate to be vapor-deposited and a vapor deposition source for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion has at least a first conical surface and a second conical surface with different cone angles between them and the surface parallel to the surface supporting the film. The cone angle of the second cone surface is smaller than that of the first cone surface, and it is formed on the side close to the film. The cone angle of the second cone surface is less than 80°. The outer frame and the columnar portion are formed at the same height. The vapor deposition mask is configured such that a thin film having the opening is supported on a silicon substrate, which serves as the support substrate; or the support substrate has an insulating layer and a silicon substrate, with the insulating layer positioned between the silicon substrate and the thin film. The thin film is composed of SiN.

7. A vapor deposition mask, which is disposed between a substrate to be vapor-deposited and a vapor deposition source, for depositing vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion has at least a first conical surface and a second conical surface with different cone angles between them and the surface parallel to the surface supporting the film. The cone angle of the second cone surface is smaller than that of the first cone surface, and it is formed on the side close to the film. The cone angle of the second cone surface is less than 80°. The outer frame and the columnar portion are formed at the same height. The evaporation mask is formed from an SOI substrate, which has the thin film, the supporting substrate, and an insulating layer formed between the thin film and the supporting substrate. A SiN layer is formed on the side of the thin film where the opening is formed, i.e., the surface side, or the side of the supporting substrate where the evaporation source is formed, i.e., the back side, or both the surface side and the back side.

8. The vapor deposition mask according to claim 6 or claim 7, characterized in that, The first conical surface is approximately vertical.

9. The vapor deposition mask according to claim 6 or claim 7, characterized in that, The cone angle of the second cone surface is less than 70°.

10. A vapor deposition mask, disposed between a substrate to be vaporized and a vapor deposition source, for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion has at least a first conical surface and a second conical surface with different cone angles between them and the surface parallel to the surface supporting the film. The second conical surface is formed on a side closer to the film than the first conical surface. The outer frame and the columnar portion are formed at the same height. When the height of the supporting substrate is set to t1, the height of the second conical surface is set to t2, and the protrusion width of the second conical surface is set to w, t2 / t1 is 0.3 or more and less than 0.85, and w / t2 is 0.4 or more and less than 1.

4. The vapor deposition mask is configured such that a thin film having the opening is supported on a silicon substrate, which serves as the support substrate; or the support substrate has an insulating layer and a silicon substrate, with the insulating layer positioned between the silicon substrate and the thin film. The thin film is composed of SiN.

11. A vapor deposition mask, which is disposed between a substrate to be vapor-deposited and a vapor deposition source for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. Each side of the outer peripheral frame and the columnar portion has at least a first conical surface and a second conical surface with different cone angles between them and the surface parallel to the surface supporting the film. The second conical surface is formed on a side closer to the film than the first conical surface. The outer frame and the columnar portion are formed at the same height. When the height of the supporting substrate is set to t1, the height of the second conical surface is set to t2, and the protrusion width of the second conical surface is set to w, t2 / t1 is 0.3 or more and less than 0.85, and w / t2 is 0.4 or more and less than 1.

4. The evaporation mask is formed from an SOI substrate, which has the thin film, the supporting substrate, and an insulating layer formed between the thin film and the supporting substrate. A SiN layer is formed on the side of the thin film where the opening is formed, i.e., the surface side, or the side of the supporting substrate where the evaporation source is formed, i.e., the back side, or both the surface side and the back side.

12. A vapor deposition mask, disposed between a substrate to be vaporized and a vapor deposition source, for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. The side of the support substrate has an inclined portion. The outer frame and the columnar portion are formed at the same height. The distance between the edge of the support substrate on the side opposite to the thin film and the opening closest to the support substrate is 30 μm or more. The vapor deposition mask is configured such that a thin film having the opening is supported on a silicon substrate, which serves as the support substrate; or the support substrate has an insulating layer and a silicon substrate, with the insulating layer positioned between the silicon substrate and the thin film. The thin film is composed of SiN.

13. A vapor deposition mask, disposed between a substrate to be vaporized and a vapor deposition source, for vapor deposition of vapor deposition material from the vapor deposition source onto the surface of the substrate through an opening, characterized in that it comprises: A thin film having: an opening region having a plurality of said openings, and a surrounding region surrounding said opening region; and A support substrate that supports the thin film in the surrounding area. The support substrate has an outer peripheral frame and a columnar portion located further inward than the outer peripheral frame. The side of the support substrate has an inclined portion. The outer frame and the columnar portion are formed at the same height. The distance between the edge of the support substrate on the side opposite to the thin film and the opening closest to the support substrate is 30 μm or more. The evaporation mask is formed from an SOI substrate, which has the thin film, the supporting substrate, and an insulating layer formed between the thin film and the supporting substrate. A SiN layer is formed on the side of the thin film where the opening is formed, i.e., the surface side, or the side of the supporting substrate where the evaporation source is formed, i.e., the back side, or both the surface side and the back side.

14. The vapor deposition mask according to claim 1, claim 2, claim 6, claim 7, claim 10, claim 11, claim 12, or claim 13, characterized in that, The sidewall of the opening of the thin film has a conical surface whose opening width narrows from the vapor deposition source side to the vapor deposition substrate side, and the cone angle between the thin film surface and the sidewall surface on the vapor deposition substrate side is greater than the cone angle of the supporting substrate.

15. The vapor deposition mask according to claim 1, 2, 6, 7, 10, 11, 12, or 13, characterized in that, The supporting substrate is thicker than the thin film.

16. The vapor deposition mask according to claim 1, 2, 6, 7, 10, 11, 12, or 13, characterized in that, The thickness of the film is less than 5 μm.

17. The vapor deposition mask according to claim 1, claim 2, claim 6, claim 7, claim 10, claim 11, claim 12, or claim 13, characterized in that, At least one of the thin film or the supporting substrate is a polycrystalline silicon structure.

18. A method for manufacturing an electronic device, characterized in that, The evaporation mask according to claim 1, 2, 6, 7, 10, 11, 12, or 13 is configured between the substrate to be evaporated and the evaporation source, such that the thin film is opposite to the substrate to be evaporated. The vapor deposition material is deposited onto the surface of the substrate through the opening.

Images