A plasma processing chamber, rps cleaning method, and processing apparatus
By setting additional electrodes in the plasma processing chamber and applying reverse pulse signals to adjust the distribution of plasma clusters, the problem of uneven cleaning in the reaction chamber was solved, resulting in more efficient cleaning and improved product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU MICROVIA NANO EQUIP TECH CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
AI Technical Summary
In plasma-enhanced chemical vapor deposition or atomic layer deposition, existing technologies cannot guarantee that all locations in the reaction chamber are uniformly exposed to RPS clean gas, resulting in deposit residues that affect the process reaction and product yield.
A first auxiliary electrode is set in the plasma processing chamber, and the spray plate, heating plate and auxiliary electrode are respectively connected through three radio frequency power sources. A reverse pulse signal is applied to adjust the distribution of plasma clusters so that the RPS cleaning gas is uniformly contacted at all positions in the chamber.
This process ensures thorough cleaning of the reaction chamber, prevents the formation of deposits and particle adhesion, and improves process reliability and product yield.
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Figure CN122246032A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor processing equipment technology, specifically to a plasma processing chamber, an RPS cleaning method, and processing equipment. Background Technology
[0002] Currently, in the fabrication of plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) thin films, the deposition reaction chamber typically consists of a spray plate acting as the upper electrode and a heating plate supporting the silicon wafer and acting as the lower electrode. During the process, radio frequency (RF) is applied to generate plasma, which participates in the reaction and forms the thin film. Typically, reactive gases flow into the chamber from above the spray plate, and excess gases and reaction byproducts are extracted from the chamber through a vacuum ring.
[0003] In related technologies, the reaction chamber must be cleaned after each coating process. Existing cleaning methods generally involve using a remote plasma source (RPS) for chamber cleaning. That is, the cleaning gas is activated by the remote plasma source, flows through the spray plate, and diffuses evenly to clean the inner wall of the reaction chamber, the spray plate, and the heating plate, etc.
[0004] In the process of implementing the embodiments of this disclosure, at least the following problems were found in the related art:
[0005] When performing PRS cleaning by injecting RPS cleaning gas into the reaction chamber through a remote plasma source, it is impossible to ensure that all locations in the reaction chamber are fully exposed to the RPS cleaning gas. This can lead to residual deposits in the reaction chamber, forming particles that adhere to the surface, thus affecting the process reaction and even the product yield.
[0006] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention
[0007] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.
[0008] This disclosure provides a plasma processing chamber, an RPS cleaning method, and a processing device to ensure that all locations inside the reaction chamber are fully exposed to RPS cleaning gas, thereby preventing residual deposits from forming in the reaction chamber.
[0009] In some embodiments, the plasma processing chamber includes:
[0010] A cavity, in which a spray plate and a heating plate are arranged opposite each other;
[0011] The first auxiliary electrode is disposed at the bottom of the cavity and below the heating plate;
[0012] A first radio frequency power source is electrically connected to the spray plate and is used to apply a first radio frequency signal to the spray plate;
[0013] A second radio frequency power source is electrically connected to the heating plate and is used to apply a second radio frequency signal to the heating plate;
[0014] A third radio frequency power source is electrically connected to the first additional electrode and is used to apply a third radio frequency signal to the first additional electrode.
[0015] Wherein, the first radio frequency signal and the third radio frequency signal are opposite pulse signals; or...
[0016] The second radio frequency signal and the third radio frequency signal are reverse pulse signals.
[0017] Optionally, the first radio frequency power source is configured to output radio frequency power corresponding to the first radio frequency signal to the spray plate;
[0018] The second radio frequency power source is configured to output radio frequency power corresponding to the second radio frequency signal to the heating plate;
[0019] The third radio frequency power source is configured to output radio frequency power corresponding to the third radio frequency signal to the first additional electrode.
[0020] Optionally, when the first radio frequency signal and the third radio frequency signal are opposite pulse signals, the plasma cluster formed by the RPS cleaning gas for the cavity is concentrated in the region where positions A and B of the cavity are located.
[0021] When the second radio frequency signal and the third radio frequency signal are reverse pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where position B of the cavity is located.
[0022] Wherein, position A is between the spray plate and the heating plate, and position B is between the heating plate and the first additional electrode.
[0023] Optionally, the plasma processing chamber further includes:
[0024] The second auxiliary electrode is disposed at the top of the cavity and above the spray plate;
[0025] A fourth radio frequency power source, electrically connected to the second additional electrode, is used to apply a fourth radio frequency signal to the second additional electrode.
[0026] Optionally, the first radio frequency signal and the fourth radio frequency signal are reverse pulse signals; or, the second radio frequency signal and the fourth radio frequency signal are reverse pulse signals.
[0027] Optionally, the fourth radio frequency power source is configured to output radio frequency power corresponding to the fourth radio frequency signal to the second additional electrode.
[0028] Optionally, when the first radio frequency signal and the fourth radio frequency signal are opposite pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where position C of the cavity is located.
[0029] When the second radio frequency signal and the fourth radio frequency signal are reverse pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where positions A and C of the cavity are located.
[0030] Wherein, position A is between the spray plate and the heating plate, and position C is between the spray plate and the second additional electrode.
[0031] Optionally, the plasma processing chamber further includes:
[0032] The pulse signal control unit is electrically connected to the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and the fourth radio frequency power source respectively, and is used to provide pulse control signals to control the first radio frequency signal, the second radio frequency signal, the third radio frequency signal and / or the fourth radio frequency signal individually or synchronously.
[0033] In some embodiments, the RPS cleaning method includes:
[0034] After the coating process is completed, RPS cleaning gas is introduced into the plasma processing chamber as described in any one of claims 1 to 8;
[0035] The first, second, third, and / or fourth radio frequency power sources of the plasma processing cavity are controlled by a pulse signal control unit so that the plasma clusters formed by the RPS cleaning gas are distributed in a specific area of the cavity.
[0036] After cleaning, excess gas and reaction byproducts should be removed from the cavity.
[0037] In some embodiments, the processing apparatus includes a plasma processing chamber as described in this application, wherein the plasma processing chamber includes:
[0038] An air intake module is configured to introduce RPS cleaning gas into the plasma processing chamber as described in any one of claims 1 to 8 after the coating process is completed;
[0039] The cleaning module is configured to control the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and / or the fourth radio frequency power source of the plasma processing cavity through a pulse signal control unit, so that the plasma clusters formed by the RPS cleaning gas are distributed in a specific area of the cavity.
[0040] The extraction module is configured to remove excess gas and reaction byproducts from the cavity after cleaning is completed.
[0041] The plasma processing chamber, RPS cleaning method, and processing equipment provided in this disclosure can achieve the following technical effects:
[0042] By placing a first auxiliary electrode at the bottom of the cavity, below the heating plate, and connecting the spray plate, heating plate, and first auxiliary electrode to three radio frequency power sources respectively, and then applying reverse pulse signals through the three radio frequency power sources, the position of the plasma cluster formed by the RPS cleaning gas in the cavity can be adjusted. This ensures that all positions in the cavity, especially the bottom of the heating plate, can fully and uniformly contact the RPS cleaning gas, achieving thorough cleaning, preventing the formation of deposit particles, ensuring process reliability, and improving product yield.
[0043] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description
[0044] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein:
[0045] Figure 1 This is a schematic diagram of the structure of a plasma processing chamber provided in an embodiment of this disclosure;
[0046] Figure 2 This is a schematic diagram of another plasma processing chamber provided in an embodiment of this disclosure;
[0047] Figure 3 This is a schematic diagram of another plasma processing chamber provided in an embodiment of this disclosure;
[0048] Figure 4 This is a schematic diagram of another plasma processing chamber provided in an embodiment of this disclosure;
[0049] Figure 5 This is a schematic diagram of another plasma processing chamber provided in an embodiment of this disclosure;
[0050] Figure 6 This is a schematic diagram of another plasma processing chamber provided in an embodiment of this disclosure;
[0051] Figure 7 This is a flowchart of an RPS cleaning method provided in an embodiment of this disclosure;
[0052] Figure 8 This is a schematic diagram of the frame structure of a processing device provided in an embodiment of this disclosure.
[0053] Figure label:
[0054] 1-Cavity; 2-Spray plate; 3-Heating plate; 4-First auxiliary electrode; 5-Second auxiliary electrode; 6-First radio frequency power source; 7-Second radio frequency power source; 8-Third radio frequency power source; 9-Fourth radio frequency power source; 10-Radio frequency matching unit; 11-Pulse signal control unit; 12-Plasma cluster. Detailed Implementation
[0055] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.
[0056] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this disclosure described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.
[0057] In this disclosure, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for better description of the embodiments of this disclosure and their implementations, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Furthermore, some of the aforementioned terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this disclosure according to the specific circumstances.
[0058] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.
[0059] Unless otherwise stated, the term "multiple" means two or more.
[0060] In this embodiment of the disclosure, the character " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B means: A or B.
[0061] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.
[0062] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.
[0063] In related technologies, semiconductor chip manufacturing and cleaning processes include the generation of plasma, and the positive ions and / or free radicals generated after plasma dissociation. These positive ions and / or free radicals are used to directly or indirectly influence changes on the surfaces of components exposed within a cavity. Plasma is typically generated by applying radio frequency (RF) power to a reactive gas in a controlled environment, thereby exciting and converting the reactive or cleaning gas into the desired plasma.
[0064] Combination Figure 1As shown, this embodiment of the present disclosure provides a plasma processing chamber, including a chamber 1, a first auxiliary electrode 4, a first radio frequency (RF) power source 6, a second RF power source 7, and a third RF power source 8. A spray plate 2 and a heating plate 3 are disposed opposite each other within the chamber 1. The first auxiliary electrode 4 is located at the bottom of the chamber 1 and below the heating plate 3. The first RF power source 6 is electrically connected to the spray plate 2 via an RF matching connector 10, and is used to apply a first RF signal RF1 to the spray plate 2. The second RF power source 7 is electrically connected to the heating plate 3 via the RF matching connector 10, and is used to apply a second RF signal RF2 to the heating plate 3. The third RF power source 8 is electrically connected to the first auxiliary electrode 4 via the RF matching connector 10, and is used to apply a third RF signal RF3 to the first auxiliary electrode 4. The first RF signal RF1 and the third RF signal RF3 are reverse pulse signals; or, the second RF signal RF2 and the third RF signal RF3 are reverse pulse signals.
[0065] The plasma processing chamber provided in this embodiment of the present disclosure is used by setting a first auxiliary electrode 4 at the bottom of the chamber 1, below the heating plate 3, and connecting the spray plate 2, the heating plate 3, and the first auxiliary electrode 4 to three radio frequency power sources respectively. Reverse pulse signals are then applied via the three radio frequency power sources. This allows adjustment of the position of the plasma cluster 12 formed by the RPS cleaning gas within the chamber 1, ensuring that all positions within the chamber 1, especially the bottom of the heating plate 3, are fully and uniformly contacted with the RPS cleaning gas. This achieves thorough cleaning, prevents particle adhesion and deposit formation, ensures process reliability, and improves product yield.
[0066] Optionally, the first radio frequency power source 6 of this application is configured to output radio frequency power corresponding to the first radio frequency signal RF1 to the spray plate 2. The second radio frequency power source 7 of this application is configured to output radio frequency power corresponding to the second radio frequency signal RF2 to the heating plate 3. The third radio frequency power source 8 of this application is configured to output radio frequency power corresponding to the third radio frequency signal RF3 to the first auxiliary electrode 4.
[0067] Specifically, combined Figure 2 As shown, when the first radio frequency signal RF1 and the third radio frequency signal RF3 are reverse pulse signals, the spray plate 2 serves as the upper electrode and the first additional electrode 4 serves as the lower electrode. The first radio frequency power source 6 and the third radio frequency power source 8 apply a negative bias voltage near the spray plate 2. The negative bias voltage generates a plasma sheath near the spray plate 2, causing the plasma cluster 12 formed by the RPS cleaning gas used in the cavity 1 to concentrate in the regions where positions A and B of the cavity 1 are located.
[0068] At the same time, combined Figure 3As shown, when the second radio frequency signal RF2 and the third radio frequency signal RF3 are reverse pulse signals, the heating plate 3 serves as the upper electrode and the first additional electrode 4 serves as the lower electrode. The first radio frequency power source 6 and the third radio frequency power source 8 apply a negative bias voltage near the heating plate 3. The negative bias voltage generates a plasma sheath near the heating plate 3, causing the plasma cluster 12 formed by the RPS cleaning gas used for the cavity 1 to concentrate in the region where position B of the cavity 1 is located.
[0069] Position A is between the spray plate 2 and the heating plate 3, and position B is between the heating plate 3 and the first auxiliary electrode 4. "Inverted pulse signal" refers to two pulse signals with the same phase and frequency, and a sum of duty cycles of 100%. Simply put, when the first RF signal RF1 is high, the third RF signal RF3 is low. Similarly, when the second RF signal RF2 is high, the third RF signal RF3 is low.
[0070] This allows for better adjustment of key cleaning areas as needed, and adjustment of the distribution of RPS cleaning gas in chamber 1, thereby improving the effectiveness of RPS cleaning.
[0071] Optionally, combined Figure 4 As shown, the plasma processing chamber of this application further includes a second auxiliary electrode 5 and a fourth radio frequency power source 9. The second auxiliary electrode 5 is disposed at the top of the chamber 1 and above the spray plate 2. The fourth radio frequency power source 9 is electrically connected to the second auxiliary electrode 5 through a radio frequency matching unit 10, and is used to apply a fourth radio frequency signal RF4 to the second auxiliary electrode 5, that is, the fourth radio frequency power source 9 is configured to output radio frequency power corresponding to the fourth radio frequency signal RF4 to the second auxiliary electrode 5. In this application, the first radio frequency signal RF1 and the fourth radio frequency signal RF4 are reverse pulse signals; or, the second radio frequency signal RF2 and the fourth radio frequency signal RF4 are reverse pulse signals.
[0072] Specifically, combined Figure 5 As shown, when the first radio frequency signal RF1 and the fourth radio frequency signal RF4 are reverse pulse signals, the second auxiliary electrode 5 serves as the upper electrode and the spray plate 2 serves as the lower electrode. The first radio frequency power source 6 and the fourth radio frequency power source 9 apply a negative bias voltage near the spray plate 2. The negative bias voltage generates a plasma sheath near the spray plate 2, causing the plasma cluster 12 formed by the RPS cleaning gas used in the cavity 1 to concentrate in the region where position C of the cavity 1 is located.
[0073] At the same time, combined Figure 6As shown, when the second radio frequency signal RF2 and the fourth radio frequency signal RF4 are reverse pulse signals, the second radio frequency signal RF2 serves as the upper electrode and the heating plate 3 serves as the lower electrode. The second radio frequency power source 7 and the fourth radio frequency power source 9 apply a negative bias voltage near the heating plate 3. The negative bias voltage generates a plasma sheath near the heating plate 3, causing the plasma cluster 12 formed by the RPS cleaning gas used for the cavity 1 to concentrate in the region where positions A and C of the cavity 1 are located.
[0074] Position A is between the spray plate 2 and the heating plate 3, and position C is between the spray plate 2 and the second auxiliary electrode 5. "Inverted pulse signal" refers to two pulse signals with the same phase and frequency, and a sum of duty cycles of 100%. Simply put, when the second radio frequency signal RF2 is high, the fourth radio frequency signal RF4 is low. When the fourth radio frequency signal RF4 is high, the second radio frequency signal RF2 is low.
[0075] This allows for better adjustment of key cleaning areas as needed, and adjustment of the distribution of RPS cleaning gas in chamber 1, thereby improving the effectiveness of RPS cleaning.
[0076] Optionally, the plasma processing chamber of this application further includes a pulse signal control unit 11. The pulse signal control unit 11 of this application is electrically connected to the first radio frequency power source 6, the second radio frequency power source 7, the third radio frequency power source 8 and the fourth radio frequency power source 9, respectively, to provide pulse control signals to control the first radio frequency signal RF1, the second radio frequency signal RF2, the third radio frequency signal RF3 and / or the fourth radio frequency signal RF4 individually or synchronously.
[0077] Combination Figure 7 As shown, this disclosure provides an RPS cleaning method, including:
[0078] Step 701: After the coating process is completed, RPS cleaning gas is introduced into the plasma processing chamber of this application.
[0079] Step 702: Control the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and / or the fourth radio frequency power source of the plasma processing cavity through the pulse signal control unit, so that the plasma cluster formed by the RPS cleaning gas is distributed in a specific area of the cavity.
[0080] Step 703: After cleaning, remove excess gas and reaction byproducts from the chamber.
[0081] The RPS cleaning method provided in this disclosure involves placing a first auxiliary electrode at the bottom of the cavity, below the heating plate, and connecting the spray plate, heating plate, and first auxiliary electrode to three radio frequency power sources, respectively. Reverse pulse signals are then applied via these three radio frequency power sources. This allows adjustment of the position of the plasma clusters formed by the RPS cleaning gas within the cavity, ensuring that all locations within the cavity, especially the bottom of the heating plate, are fully and uniformly contacted with the RPS cleaning gas. This achieves thorough cleaning, prevents particle adhesion and deposit formation, ensures process reliability, and improves product yield.
[0082] Combination Figure 8 As shown, this disclosure provides a processing apparatus, including a plasma processing chamber as described in this application, wherein the plasma processing chamber includes:
[0083] The air intake module 801 is configured to introduce RPS cleaning gas into the plasma processing chamber of this application after the coating process is completed;
[0084] The cleaning module 802 is configured to control the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and / or the fourth radio frequency power source of the plasma processing cavity through the pulse signal control unit, so that the plasma cluster formed by the RPS cleaning gas is distributed in a specific area of the cavity.
[0085] The extraction module 803 is configured to extract excess gas and reaction byproducts from the chamber after cleaning is completed.
[0086] Using the processing apparatus provided in this embodiment, a first additional electrode is disposed at the bottom of the cavity, below the heating plate, and three radio frequency power sources are respectively connected to the spray plate, the heating plate, and the first additional electrode. Reverse pulse signals are then applied via the three radio frequency power sources. This allows adjustment of the position of the plasma clusters formed by the RPS cleaning gas within the cavity, ensuring that all positions within the cavity, especially the bottom of the heating plate, are fully and uniformly contacted with the RPS cleaning gas. This achieves thorough cleaning, prevents the formation of deposit particles, ensures process reliability, and improves product yield.
[0087] The foregoing description and accompanying drawings fully illustrate embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the order of operation may vary. Parts and features of some embodiments may be included or substituted for parts and features of other embodiments. Embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.
Claims
1. A plasma processing chamber, comprising: include: A cavity, in which a spray plate and a heating plate are arranged opposite each other; The first auxiliary electrode is disposed at the bottom of the cavity and below the heating plate; A first radio frequency power source is electrically connected to the spray plate and is used to apply a first radio frequency signal to the spray plate; A second radio frequency power source is electrically connected to the heating plate and is used to apply a second radio frequency signal to the heating plate; A third radio frequency power source is electrically connected to the first additional electrode and is used to apply a third radio frequency signal to the first additional electrode. Wherein, the first radio frequency signal and the third radio frequency signal are opposite pulse signals; or, the second radio frequency signal and the third radio frequency signal are opposite pulse signals.
2. The plasma processing chamber of claim 1, wherein, The first radio frequency power source is configured to output radio frequency power corresponding to the first radio frequency signal to the spray plate; The second radio frequency power source is configured to output radio frequency power corresponding to the second radio frequency signal to the heating plate; The third radio frequency power source is configured to output radio frequency power corresponding to the third radio frequency signal to the first additional electrode.
3. The plasma processing chamber of claim 1, wherein, When the first radio frequency signal and the third radio frequency signal are reverse pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where positions A and B of the cavity are located. When the second radio frequency signal and the third radio frequency signal are reverse pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where position B of the cavity is located. Wherein, position A is between the spray plate and the heating plate, and position B is between the heating plate and the first additional electrode.
4. The plasma processing chamber of claim 1, wherein, Also includes: The second auxiliary electrode is disposed at the top of the cavity and above the spray plate; A fourth radio frequency power source, electrically connected to the second additional electrode, is used to apply a fourth radio frequency signal to the second additional electrode.
5. The plasma processing chamber of claim 4, wherein, The first radio frequency signal and the fourth radio frequency signal are opposite pulse signals; or, the second radio frequency signal and the fourth radio frequency signal are opposite pulse signals.
6. The plasma processing chamber of claim 4, wherein, The fourth radio frequency power source is configured to output radio frequency power corresponding to the fourth radio frequency signal to the second additional electrode.
7. The plasma processing chamber of claim 6, wherein, When the first radio frequency signal and the fourth radio frequency signal are opposite pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where position C of the cavity is located. When the second radio frequency signal and the fourth radio frequency signal are reverse pulse signals, the plasma cluster formed by the RPS cleaning gas used in the cavity is concentrated in the region where positions A and C of the cavity are located. Wherein, position A is between the spray plate and the heating plate, and position C is between the spray plate and the second additional electrode.
8. The plasma processing chamber of any of claims 4 to 7, wherein, Also includes: The pulse signal control unit is electrically connected to the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and the fourth radio frequency power source respectively, and is used to provide pulse control signals to control the first radio frequency signal, the second radio frequency signal, the third radio frequency signal and / or the fourth radio frequency signal individually or synchronously.
9. A method of RPS cleaning, characterized by, include: After the coating process is completed, RPS cleaning gas is introduced into the plasma processing chamber as described in any one of claims 1 to 8; The first, second, third, and / or fourth radio frequency power sources of the plasma processing cavity are controlled by a pulse signal control unit so that the plasma clusters formed by the RPS cleaning gas are distributed in a specific area of the cavity. After cleaning, excess gas and reaction byproducts should be removed from the cavity.
10. A processing device, characterized by Includes the plasma processing chamber as described in any one of claims 1 to 8, wherein the plasma processing chamber comprises: The air intake module is configured to introduce RPS cleaning gas into the plasma processing chamber after the coating process is completed; The cleaning module is configured to control the first radio frequency power source, the second radio frequency power source, the third radio frequency power source and / or the fourth radio frequency power source of the plasma processing cavity through a pulse signal control unit, so that the plasma clusters formed by the RPS cleaning gas are distributed in a specific area of the cavity. The extraction module is configured to remove excess gas and reaction byproducts from the cavity after cleaning is completed.