Large-area perovskite single crystal film and preparation method and application thereof

By preparing precursors using metal halide and halide imidazole solutions with specific components, and combining in-situ growth and crystal nucleation control techniques, the problem of preparing large-area perovskite single crystal films was solved, enabling the application of high-quality perovskite single crystal films in optoelectronic devices, especially exhibiting excellent performance in X-ray detectors.

CN122248946APending Publication Date: 2026-06-19NANCHANG CAMPUS OF JIANGXI UNIV OF SCI & TECH
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Patent Information

Application Number
CN202610451052.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-08
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing technologies struggle to fabricate large-area, high-quality perovskite single-crystal films, especially when used in optoelectronic devices where they suffer from high grain boundary defect density, poor stability, and high fabrication costs.

Method used

A precursor was prepared using a metal halide and halide imidazole solution with specific components. Combined with in-situ growth and crystal nucleation control technology, crystal nuclei were formed by stimulating the corner of a conductive substrate with a sharp object, thus achieving the growth of a large-area perovskite single crystal film.

Benefits of technology

Large-area perovskite single-crystal films without obvious grain boundaries and defects were prepared, which are suitable for a variety of optoelectronic devices, especially exhibiting high sensitivity and good working stability in the field of X-ray detection.

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Abstract

The invention provides a large-area perovskite single crystal film and a preparation method and application thereof, and belongs to the technical field of semiconductors. The structural general formula of the large-area perovskite single crystal film is AmBnXz, in the formula, A is imidazole positive ions, and m is equal to 1-3; b is a metal cation, and n is equal to 1-2; x is halogen anion, and z is 3-9. The preparation method of the large-area perovskite single crystal film comprises the following steps: mixing a metal halide precursor solution and a halogenated imidazole precursor solution; a conductive substrate is placed on a heating table for preheating, the mixed solution is dispensed on the conductive substrate for in-situ growth, then annealing treatment is performed, any corner of the upper surface of the conductive substrate is stimulated by adopting a sharp object, and after cooling, the large-area perovskite single crystal film is prepared and can be used for preparing photoelectric devices. The perovskite material with specific components is provided, in-situ growth and crystal nucleus regulation and control means are combined, the high-quality and large-area single crystal film without obvious crystal boundaries and defects is prepared, the process is simple, and industrial popularization is facilitated.
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