Multi-stream gas circuits, chamber kits, processing chambers, and related apparatus and methods for semiconductor manufacturing

Abstract

Embodiments of this disclosure relate to multi-flow gas circuits, chamber fittings, processing chambers, and related apparatus and methods suitable for semiconductor manufacturing. In one or more embodiments, the processing chamber includes a chamber body, a heat source, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves is in fluid communication with a first set of injection passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of injection passages. The second set of injection passages alternates with the first set of injection passages relative to each other along multiple flow levels.

Description

Technical Field

[0001] Embodiments of this disclosure relate to multi-flow gas circuits, chamber fittings, processing chambers, and related apparatus and methods suitable for semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate includes depositing a material (e.g., a dielectric material or a semiconductor material) on the upper surface of the substrate. Material can be deposited in a transverse flow chamber by flowing a process gas parallel to the surface of the substrate positioned on a support and thermally decomposing the process gas to deposit the material from the gas onto the substrate surface.

[0003] However, operations (e.g., epitaxial deposition operations) can be lengthy, expensive, and inefficient, and may have limited capacity and throughput. Furthermore, hardware and operation can be limited relative to the structures that can be formed on the substrate. Additionally, processing may involve inhomogeneities, which can impair device performance and / or reduce throughput. These problems can be exacerbated in batch processing operations.

[0004] Therefore, there is a need to improve the equipment and methods used in semiconductor processing. Summary of the Invention

[0005] Embodiments of this disclosure relate to multi-flow gas circuits, chamber fittings, processing chambers, and related apparatus and methods suitable for semiconductor manufacturing.

[0006] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body. The chamber body includes a processing volume, a plurality of injection passages formed within the chamber body and arranged at multiple flow levels, and one or more exhaust passages formed within the chamber body. The processing chamber includes one or more heat sources configured to heat the processing volume and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves is in fluid communication with the first set of injection passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with the second set of injection passages. The second set of injection passages alternates with the first set of injection passages relative to each other along multiple flow levels.

[0007] In one or more embodiments, a gas circuit suitable for semiconductor manufacturing includes a first flow controller, a first set of valves in fluid communication with the first flow controller, and a first supply valve and a first supply line in fluid communication with the first flow controller. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves alternates with the first set of valves relative to each other. The gas circuit includes a second supply valve and a second supply line in fluid communication with the second flow controller.

[0008] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body, and the chamber body includes a plurality of jet passages arranged at multiple flow levels. The processing chamber includes a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves is in fluid communication with the first set of jet passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with the second set of jet passages. The second set of jet passages alternates with the first set of jet passages relative to each other along a first zone of multiple flow levels. The gas circuit includes a third flow controller and a third set of valves in fluid communication with the third flow controller. The third set of valves is in fluid communication with the third set of jet passages. The gas circuit includes a fourth flow controller and a fourth set of valves in fluid communication with the fourth flow controller. The fourth set of valves is in fluid communication with the fourth set of jet passages. The fourth set of jet passages alternates with the third set of jet passages relative to each other along a second zone of multiple flow levels.

[0009] In one or more embodiments, a substrate processing method includes causing a first airflow to flow into a first set of flow levels in a processing chamber, and simultaneously causing a second airflow to flow into a second set of flow levels in the processing chamber. The first and second set of flow levels alternate with each other. The method includes heating one or more substrates positioned in the processing chamber.

[0010] In one or more embodiments, a non-transitory computer-readable medium includes a plurality of instructions that, when executed, cause a plurality of operations to be performed. The plurality of operations include opening a first set of valves to allow a first airflow to flow into a first set of flow levels, and simultaneously opening a second set of valves to allow a second airflow to flow into a second set of flow levels. The first and second sets of flow levels alternate relative to each other. The plurality of operations include supplying power to one or more heat sources.

[0011] In one or more embodiments, a non-transitory computer-readable medium includes a plurality of instructions that, when executed, cause a plurality of operations to be performed. The plurality of operations include opening a first supply valve along a first supply line to supply a first gas flow to a first set of flow levels. The plurality of operations include closing a second supply valve along a second supply line and opening a connection valve between the first and second supply lines to supply the first gas flow to a second set of flow levels.

[0012] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body and one or more heat sources configured to heat a processing volume. The chamber body includes a processing volume, a plurality of injection passages formed in the chamber body and arranged at multiple flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes a first arcuate support, a second arcuate support spaced apart from the first arcuate support, and a plate supported by the second arcuate support, the plate including a plurality of openings formed therein.

[0013] In one or more embodiments, a chamber fitting suitable for semiconductor manufacturing operations includes a first arcuate support, a second arcuate support, and a plate sized and shaped to be positioned on the second arcuate support. The plate includes a plurality of openings formed therein. The chamber fitting also includes a third arcuate support and a second plate sized and shaped to be positioned on the third arcuate support.

[0014] In one or more embodiments, a substrate processing method includes flowing a first airflow into a first flow level of a processing chamber and flowing over a substrate. The method includes flowing a second airflow over a plate disposed above or below the substrate. The flow includes flowing the second airflow over the substrate after passing over the plate. The method includes heating the substrate. Attached Figure Description

[0015] To enable a detailed understanding of the features described above, a more specific description of the disclosure (briefly summarized above) may be obtained with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of the disclosure, and since other equivalent embodiments are permissible with respect to the disclosure, they are not intended to limit the scope of the disclosure.

[0016] Figure 1 This is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0017] Figure 2 According to one or more embodiments Figure 1 A schematic cross-sectional side view of the processing chamber shown.

[0018] Figures 3A to 3D This is a schematic partial cross-sectional side view of the processing chamber and gas circuit during the substrate processing method.

[0019] Figure 4 This is based on the use of one or more embodiments. Figures 3A to 3D A schematic cross-sectional side view of the substrate structure formed by the method shown.

[0020] Figure 5 This is based on the use of one or more embodiments. Figures 3A to 3D A schematic cross-sectional side view of the substrate structure formed by the method shown.

[0021] Figure 6 This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0022] Figures 7A to 7B This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0023] Figure 8 This is based on the use of one or more embodiments. Figure 6 The method shown or Figures 7A to 7B A schematic cross-sectional side view of the substrate structure formed by the method shown.

[0024] Figure 9 This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0025] Figure 10 This is based on the use of one or more embodiments. Figure 9 A schematic cross-sectional side view of the substrate structure formed by the method shown.

[0026] Figure 11 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0027] Figure 12 This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0028] Figure 13 This is based on the use of one or more embodiments. Figure 12 A schematic cross-sectional side view of the substrate structure formed by the method shown.

[0029] Figure 14 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0030] Figures 15A to 15F This is a schematic partial cross-sectional side view of the processing chamber and gas circuit during the substrate processing method.

[0031] Figure 16 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0032] Figures 17A to 17F This is a schematic partial cross-sectional side view of the processing chamber and gas circuit during the substrate processing method.

[0033] Figure 18 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0034] Figure 19 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0035] Figure 20 This is a schematic cross-sectional side view of a substrate structure according to one or more embodiments.

[0036] Figures 21A to 21B This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0037] Figures 22A to 22B This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0038] Figures 23A to 23B This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0039] Figures 24A to 24B This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0040] Figure 25 According to one or more embodiments Figure 24B A schematic partial top view of the second flow level.

[0041] Figure 26 According to one or more embodiments Figure 24A A schematic partial top view of the first flow level.

[0042] Figure 27 According to one or more embodiments Figure 24A and Figure 24B A schematic perspective top view of the pumping ring shown.

[0043] Figure 28 According to one or more embodiments Figure 24A and Figure 24B A schematic perspective top view of the cover plate shown.

[0044] Figure 29 This is a schematic perspective top view of a pumping ring according to one or more embodiments.

[0045] Figure 30 This is a schematic partial cross-sectional side view of a processing chamber and gas circuit during a substrate processing method according to one or more embodiments.

[0046] For the sake of visual clarity, Figures 3A to 3D , Figure 6 , Figures 7A to 7B , Figure 9 , Figure 12 , Figures 15A to 15F , Figures 17A to 17F , Figures 21A to 21B , Figures 22A to 22B , Figures 23A to 23B ,and Figures 24A to 24B The shading is omitted. For visual clarity, Figure 1 and Figure 2 Some shading lines have been omitted.

[0047] To facilitate understanding, the same reference numerals are used where possible to designate the same elements common in the figures. Elements and features of one embodiment are contemplated to be advantageously incorporated into other embodiments without being described separately. Detailed Implementation

[0048] Embodiments of this disclosure relate to multi-flow gas loops, chamber fittings, processing chambers, and related apparatus and methods suitable for semiconductor manufacturing. Embodiments of this disclosure relate to multi-flow methods and related apparatus suitable for semiconductor manufacturing. The subject matter described herein can be used to process a single substrate at a time or to process two or more substrates simultaneously.

[0049] This disclosure anticipates that terms (e.g., "couples", "coupling", "couple", and "coupled") may include, but are not limited to, the use of bolts, threaded connections, rods, and / or screws for insertion, engagement, welding, fusion, interlocking, and / or fastening. This disclosure anticipates that terms (e.g., "couples", "coupling", "couple", and "coupled") may include, but are not limited to, integrated formation. This disclosure anticipates that terms (e.g., "couples", "coupling", "couple", and "coupled") may include, but are not limited to, direct coupling and / or indirect coupling (e.g., indirect coupling through components (e.g., links, blocks, and / or frames)).

[0050] Figure 1 This is a schematic cross-sectional side view of a processing chamber 100 according to one or more embodiments. For visual clarity, Figure 1 No illustration Figure 2 The side heat sources 118a and 118b are shown. The processing chamber 100 includes a chamber body 130 defining an internal volume 124. The internal volume 124 includes a processing volume 128.

[0051] The chamber fitting 150 is positioned within the processing volume 128 and is supported at least partially by substrate support assemblies 119 (e.g., stage assemblies and / or ring assemblies). The chamber fitting 150 includes a first plate 1032, a second plate 171, and supports multiple substrates 107 (two illustrated) for simultaneous processing (e.g., epitaxial deposition) at multiple levels. The first plate 1032 is contemplated to be omitted in this disclosure. Figure 1 In the illustrated implementation, chamber fitting 150 supports two substrates. Chamber fitting 150 can support other numbers of substrates (including but not limited to three substrates 107, four substrates 107, six substrates 107, or eight substrates 107). Processing chamber 100 includes an upper window 116 (e.g., a dome) disposed between cover 104 and processing volume 128.

[0052] Processing chamber 100 includes a lower window 115 disposed below processing volume 128. One or more upper heat sources 106 are positioned above processing volume 128 and upper window 116. The one or more upper heat sources 106 may be radiant heat sources (e.g., lamps, such as halogen lamps). The one or more upper heat sources 106 are disposed between upper window 116 and cover 104. The upper heat sources 106 may be positioned to promote uniform heating of substrate 107. One or more lower heat sources 138 are positioned below processing volume 128 and lower window 115. The one or more lower heat sources 138 may be radiant heat sources (e.g., lamps, such as halogen lamps). The lower heat sources 138 are disposed between lower window 115 and base plate 134 of internal volume 124. The lower heat sources 138 may be positioned to promote uniform heating of substrate 107.

[0053] For the various heat sources described herein, this disclosure contemplates the use of other heat sources (other than or in place of lamps). For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers can be used for the various heat sources described herein.

[0054] The upper window 116 and the lower window 115 may be transparent to infrared radiation (e.g., transmitting at least 80% (e.g., at least 95%) of infrared radiation). The upper window 116 and the lower window 115 may be made of quartz material (e.g., transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window. The outer window support 194 supports the inner window 193 and is at least partially disposed within a support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window. The outer window support 188 supports the inner window 187.

[0055] A substrate support assembly 119 is disposed within a processing volume 128. One or more pads 180 are disposed within the processing volume 128 and surround the substrate support assembly 119. The one or more pads 180 facilitate shielding of a chamber body 130 from the effects of processing chemicals within the processing volume 128. The chamber body 130 is at least partially disposed between an upper window 116 and a lower window 115. The one or more pads 180 are disposed between the processing volume 128 and the chamber body 130. The one or more pads 180 include an upper pad 181 and one or more lower pads 183.

[0056] Processing chamber 100 includes one or more gas injection passages 182 formed in chamber body 130 and in fluid communication with processing volume 128. Figure 1 (Multiple shown in the figure), and one or more gas exhaust passages 172 formed in the chamber body 130 opposite to one or more gas injection passages 182 (in Figure 1 (Multiple are shown in the figure). One or more gas exhaust passages 172 are in fluid communication with the processing volume 128. Each of one or more gas injection passages 182 and one or more gas exhaust passages 172 is formed to pass through one or more sidewalls of the chamber body 130 and through one or more gaskets 180 lined to one or more sidewalls of the chamber body 130.

[0057] Each gas injection passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 formed in one or more gas liner 180 (in Figure 1 (Multiple diagrams are shown in the image). One or more supply conduit systems are in fluid communication with one or more gas injection passages 182. Figure 1 In this configuration, the internal supply conduit system 121 and the external supply conduit system 122 are in fluid communication with multiple gas injection passages 182. The internal supply conduit system 121 includes an internal gas box 123 mounted to the chamber body 130 and in fluid communication with the internal gas injection passages 182. The external supply conduit system 122 includes multiple external gas boxes 117 mounted to the chamber body 130 and in fluid communication with the external gas injection passages 182. This disclosure contemplates the use of various gas supply systems (e.g., with...). Figure 1 Different supply conduit systems, gas injection paths, and / or gas boxes are shown.

[0058] The processing chamber 100 includes a chamber fitting 150. The chamber fitting 150 includes a plurality of preheating rings 111a-111d positioned outside the substrate 107 and the first and second plates 1032, 171. Figure 1 The diagram shows four preheating rings 111a-111d. Other numbers (e.g., two or three) of preheating rings 111 can be used. The chamber fitting 150 divides the processing volume into multiple flow levels 153 (in... Figure 1 The diagram illustrates three flow levels. In one or more embodiments, the chamber fitting 150 includes at least two (e.g., at least three) flow levels 153. One or more gas injection passages 182 are positioned to correspond to a plurality of injection levels, such that each gas injection passage 182 corresponds to one of the plurality of injection levels. Each injection level is aligned with a respective flow level 153. Preheating rings 111a-111d are coupled to one or more gaskets 180 and / or at least partially supported by one or more gaskets 180. In one or more embodiments, each of the preheating rings 111a-111d includes a complete ring or one or more ring segments (e.g., C-shaped ring segments and / or multiple ring segments).

[0059] The chamber fitting 150 includes a plurality of arcuate supports 112a-112c. A first arcuate support 112a is configured to support one of the base plates 107, a second arcuate support 112b is configured to support a plate 169, and a third arcuate support 112c supports another of the base plates 107. The chamber fitting 150 also includes one or more support rod structures 1081 (multiple shown) supporting the arcuate supports 112a-112c. The one or more support rod structures 1081 are sized and shaped to extend through the arcuate supports 112a-112c and into a second plate 171. In one or more embodiments, each of the arcuate supports 112a-112c includes a complete ring or one or more ring segments (e.g., C-shaped ring segments and / or multiple ring segments).

[0060] During operation (e.g., during epitaxial deposition operation), one or more process gases P1 are supplied to the processing volume 128 via an external supply conduit system 122 and via one or more gas injection passages 182. One or more process gases P1 are supplied from one or more gas sources 196 in fluid communication with one or more gas injection passages 182. Each of the gas injection passages 182 is configured to guide one or more process gases P1 toward the chamber fitting 150 in a generally radially inward direction. Thus, in one or more embodiments, the gas injection passage 182 may be part of a crossflow gas ejector. The flow of one or more process gases P1 may be divided into at least some (e.g., two or more) of a plurality of flow levels 153. For at least the uppermost flow level 153 (or a single flow level 153 – if a single flow level 153 is used), one or more process gases P1 may be guided along a streamlined flow path (using a second plate 171) such that dispersed flow away from the uppermost substrate 107 (or a single substrate 107 – if a single substrate 107 is used) is reduced or eliminated.

[0061] Processing chamber 100 includes an exhaust duct system 190. One or more processing gases P1 can be exhausted through exhaust gas openings formed in one or more gaskets 180, exhaust gas passages formed in the chamber body 130, and then through an exhaust gas box 1091. One or more processing gases P1 can flow from the exhaust gas box 1091 to an optional-common exhaust box 1092, and then out through ducts using one or more pump devices 197 (e.g., one or more vacuum pumps).

[0062] For example, one or more processing gases P1 may include purifying gases, cleaning gases, and / or deposition gases. For example, deposition gases may include one or more active gases carried by one or more carrier gases. For example, one or more active gases may include silicon- and / or germanium-containing gases (e.g., silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), and / or germanane (GeH4)), chlorine-containing etching gases (e.g., hydrogen chloride (HCl)), and / or dopant gases (e.g., phosphine (PH3) and / or diborane (B2H6)). For example, one or more inert gases (e.g., purifying gases and / or carrier gases) may include one or more of argon (Ar), helium (He), nitrogen (N2), hydrogen chloride (HCl), and / or hydrogen (H2).

[0063] Inert gas P2 (e.g., purified gas) supplied from inert gas source 129 is introduced into the bottom region 105 of internal volume 124 through one or more lower gas inlets 184 formed in the sidewall of chamber body 130. Inert gas P2 can also be supplied via internal supply conduit system 121 and above plate 169 positioned between two substrates 107.

[0064] One or more lower gas inlets 184 are located at a height below one or more gas injection passages 182. If one or more gaskets 180 are used, sections of one or more gaskets 180 may be located between one or more gas injection passages 182 and one or more lower gas inlets 184. One or more lower gas inlets 184 are configured to guide inert gas P2 in a generally radially inward direction. One or more lower gas inlets 184 may be configured to guide inert gas P2 in an upward direction. During the film formation process, the substrate support assembly 119 is located at a position that can facilitate the flow of inert gas P2 generally along the flow path across the back side of the first plate 1032. Inert gas P2 exits the bottom region 105 and is discharged from the processing chamber 100 through one or more lower gas exhaust passages 102 located on the opposite side of the processing volume 128 relative to one or more lower gas inlets 184.

[0065] The substrate support assembly 119 includes a first lifting frame 199 and a second lifting frame 198, the second lifting frame 198 being at least partially disposed around the first lifting frame 199. The first lifting frame 199 includes a first arm 1021 coupled to an outer ring 1033, such that raising and lowering the first lifting frame 199 raises and lowers the substrate 107, the first plate 1032, the second plate 171, and the plate 169. A plurality of lifting rods 189 are suspended from the first plate 1032. Lowering the first plate 1032 and / or raising the second lifting frame 198 actuates the lifting rods 189 into contact with the arm 1022 of the second lifting frame 198. Continuous lowering of the first plate 1032 and / or raising of the second lifting frame 198 actuates the lifting rods 189 into contact with the substrate 107 and / or the plate 169, such that the lifting rods 189 raise the substrate 107 and / or the plate 169. The bottom region 105 of the processing chamber 100 is defined between the base plate 134 and the box 1030. For example... Figure 1 As shown, the lifting rod 189 can be configured to abut against the arm 1022 and rise from the arm 1022.

[0066] A first shaft 126 of the first lifting frame 199, a second shaft 125 of the second lifting frame 198, and a segment 151 of the lower window 115 extend through a port formed in the bottom 135 and the base plate 134 of the chamber body 130. Each shaft 125, 126 is coupled to one or more individual motors 164 configured to independently raise, lower, and / or rotate the base plate 107 and plate 169 using the first lifting frame 199, and to independently raise and lower the lifting rod 189 using the second lifting frame 198. The first lifting frame 199 includes a first shaft 126 and a plurality of first arms 1021 configured to support the first plate 1032, the base plate support 112, and the second plate 171.

[0067] The arc-shaped supports 112a-112c are supported by the first lifting frame 199 and are part of the box 1030 in the processing volume 128. The plurality of injection passages 182 are in fluid communication with the respective flow paths above the plurality of arc-shaped supports 112a-112c.

[0068] The second lifting frame 198 includes a second shaft 125 configured to interface with and support the lifting rod 189 and a plurality of second arms 1022. A bellows assembly 158 surrounds and encloses a portion of the shafts 125, 126 disposed outside the chamber body 130 to facilitate the reduction or elimination of vacuum leakage outside the chamber body 130.

[0069] An opening 136 (substrate transfer opening) is formed through one or more sidewalls of the chamber body 130. The opening 136 can be used to transfer the plate 169 and / or substrate 107 to or from the arcuate supports 112a-112c (e.g., into and out of the internal volume 124). In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve, allowing the substrate to pass through it. For visual clarity, Figure 1 and Figure 2 The opening 136 in the middle is shown as a dashed line.

[0070] The processing chamber 100 may include one or more sensors 191, 192, 282 (e.g., temperature sensors (e.g., optical pyrometers) or other metering sensors) that measure the temperature (or other parameters) within the processing chamber 100 (e.g., on the surfaces of the upper window 116, the first plate 1032, the second plate 171, the plate 169, the arcuate supports 112a-112c, the preheating rings 111a-111d, and / or the substrate 107). One or more sensors 191, 192, 282 are disposed on the cover 104. Figure 2 One or more sensors 282 (e.g., lower pyrometers) are disposed on the lower side of the lower window 115. One or more sensors 282 may be disposed adjacent to and / or disposed on the bottom 135 of the chamber body 130.

[0071] In one or more embodiments, the upper sensors 191, 192 are oriented toward the top of the second plate 171 and / or the top of the fourth preheating ring 111d. In one or more embodiments, the side sensor 281 (e.g., a side temperature sensor) is oriented toward one or more of the arcuate supports 112a-112c and / or the preheating rings 111a-111d. In one or more embodiments, one or more lower sensors 282 are oriented toward the bottom of the chamber fitting 150 (e.g., the lower surface of the first plate 1032, the bottom of the second plate 171, and / or the bottom of the first preheating ring 111a).

[0072] Processing chamber 100 includes a controller 1070 configured to control processing chamber 100 or its components. For example, controller 1070 can control the operation of components of processing chamber 100 using direct control of the components or by controlling a controller associated with the components. In operation, controller 1070 enables the collection of data and feedback from individual chambers to coordinate and control the performance of processing chamber 100.

[0073] The controller 1070 typically includes a central processing unit (CPU) 1071, memory 1072, and support circuitry 1073. The CPU 1071 can be one of any type of general-purpose processor capable of being used in an industrial environment. Memory 1072, or a non-transitory computer-readable medium, can be accessed by the CPU 1071 and can be one or more of memory types, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. Support circuitry 1073 is coupled to the CPU 1071 and may include cache, clock circuitry, input / output subsystems, power supply, etc.

[0074] The various methods and operations disclosed herein can generally be implemented under the control of CPU 1071 by CPU 1071 executing computer instruction code stored in memory 1072 (or in the memory of a particular processing chamber) as, for example, software routines. When the computer instruction code is executed by CPU 1071, CPU 1071 controls the components of processing chamber 100 to operate according to the various methods and operations described herein. In one or more embodiments, memory 1072 (a non-transitory computer-readable medium) includes instructions stored therein that, when executed, cause the methods and operations described herein to be performed. For example, controller 1070 may be in communication with a heat source, gas source, and / or vacuum pump of processing chamber 100 to enable multiple operations.

[0075] The first plate 1032 and / or one or more pads 180 (e.g., upper pad 181 and / or one or more lower pads 183) are formed of one or more of quartz (e.g., transparent quartz (e.g., pure quartz), opaque quartz (e.g., white quartz, gray quartz, and / or black quartz)), silicon carbide (SiC), graphite coated with SiC and / or opaque quartz, and / or one or more ceramics (e.g., bauxite (alumina (Al2O3)), aluminum nitride (AlN), silicon nitride (Si3N4), boron nitride (BN), and / or boron carbide (B4C))).

[0076] Figure 2 According to one or more embodiments Figure 1 A schematic cross-sectional side view of the processing chamber 100 shown. Figure 2 The cross-sectional view shown is relative to Figure 1 The cross-sectional view shown is rotated 55 degrees.

[0077] The processing chamber 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistance heaters, side LEDs, and / or side lasers) located outside the processing volume 128. One or more second side heat sources 118b are opposite to one or more first side heat sources 118a spanning the processing volume 128.

[0078] exist Figure 2 For visual clarity, the preheating rings 111a-111d are not illustrated. In addition to one or more sensors 191, 192 positioned above the processing volume 128 and the second plate 171, the processing chamber 100 may include one or more sensors 281 (e.g., temperature sensors (e.g., optical pyrometers) or other metering sensors) that measure the temperature (or other parameters) within the processing chamber 100. Multiple windows 257 (if used) may be disposed in the gap between one or more liner (e.g., upper liner 181 and / or one or more lower liner 183) or formed in one or more liner 180. One or more sensors 281 are side sensors (e.g., side pyrometers) positioned outside the processing volume 128 and outside the preheating rings 111a-111d (e.g.,...). Figure 1 As shown), and the outer side of multiple windows 257. For example, one or more sensors 281 may be radially aligned with multiple windows 257 (as shown). Figure 2 (As shown).

[0079] One or more side sensors 281 (e.g., one or more pyrometers) can be used to measure the temperature (or other parameters) within the processing volume 128 from individual sides of the processing volume 128. The side sensors 281 are arranged in a plurality of sensor horizontal (in...) Figure 2 The diagram shows two sensor levels. In one or more embodiments, the number of sensor levels is equal to the number of heat source levels. Each side of the sensor 281 may be horizontally oriented, or may be directed (e.g., oriented downwards at an angle) toward the respective level of the substrate 107 and / or substrate support 112 of the housing 1030.

[0080] This disclosure is intended to omit side heat sources 118a, 118b, window 257, and / or side sensor 281.

[0081] Figures 3A to 3D This is a schematic partial cross-sectional side view of the processing chamber 100 and the gas circuit 300 during the substrate processing method.

[0082] Gas circuit 300 includes a first flow controller 310, a first set of valves 311 and 312 in fluid communication with the first flow controller 310, and a first supply valve 313 and a first supply line 314 in fluid communication with the first flow controller 310. The first set of valves 311 and 312 are in fluid communication with a first set of injection passages 182a. Gas circuit 300 includes a second flow controller 320, a second set of valves 321 and 322 in fluid communication with the second flow controller 320, and a second supply valve 323 and a second supply line 324 in fluid communication with the second flow controller 320. The second set of valves 321 and 322 alternates with the first set of valves 311 and 312 relative to each other. The second set of valves 321 and 322 is in fluid communication with a second set of injection passages 182b. The second set of injection passages 182b alternates with the first set of injection passages 182a relative to each other along multiple flow levels. Gas circuit 300 includes a third flow controller 330, a valve 331 in fluid communication with the third flow controller 330, and a third supply valve 332 and a third supply line 333 in fluid communication with the third flow controller 330. In one or more embodiments, flow controllers 310, 320, and 330 each include one or more mass flow controllers. In one or more embodiments, flow controllers 310, 320, and 330 are flow ratio controllers (FRCs). Valve 331 is in fluid communication with a lower injection passage 182c below the first set of injection passages 182a and the second set of injection passages 182b.

[0083] Gas circuit 300 includes a connecting valve 315, which is in fluid communication between a first supply line 314 and a second supply line 324 located downstream of the first supply valve 313 and the second supply valve 323. A second connecting valve 325 is in fluid communication between a third supply line 333 located downstream of the first supply valve 313 and the first supply line 314. A third connecting valve 335 is in fluid communication between a third supply line 333 located downstream of the second supply valve 323 and the second supply line.

[0084] like Figure 3A As shown, the method includes flowing a first airflow into a first set of flow levels 153A of a processing chamber 100, and simultaneously flowing a second airflow into a second set of flow levels 153B of the processing chamber 100. The first set of flow levels 153A and the second set of flow levels 153B alternate with each other. The method also includes heating one or more substrates 107 positioned in the processing chamber 100. Figure 3A The illustration shows a substrate 107 in a first position (e.g., an upper position). In one or more embodiments, the one or more substrates 107 include a plurality of substrates 107 (in... Figure 3A(Two examples are shown in the diagram). In one or more embodiments, the first gas flow includes a first active gas R1, while the second gas flow includes an inert gas G1. Figure 3A In this configuration, the first supply valve 313 and the first set of valves 311 and 312 are opened to supply the first active gas R1 through the first supply line 314 and the first flow controller 310. The second supply valve 323 and the second connecting valve 325 are closed, while the third supply valve 332, valve 331, and the second set of valves 321 and 322 are opened to supply the inert gas G1 through the third supply line 333 and the connecting line 326. Figure 3A In the middle, connecting valve 315 is closed. Figure 3A In the illustrated implementation, the processing chamber 100 includes five arc-shaped supports 112a-112e and six preheating rings 111a-111f. Other numbers are anticipated. The exhaust valve 391 is in fluid communication with one or more pump units 197.

[0085] When in the first position, the first set of flow levels 153a respectively correspond to the first sides of the plurality of substrates 107, such that in one or more embodiments, the first active gas R1 treats the first sides of the plurality of substrates 107 respectively. For example, the first active gas R1 may respectively form layers, respectively clean (e.g., pre-clean), or etch the first sides of the plurality of substrates 107. As an example, the first active gas R1 may respectively form a first layer 401 (e.g., ...) on the first sides of the plurality of substrates 107. Figure 4 (As shown).

[0086] like Figure 3B As shown, the method includes simultaneously introducing a second gas flow (including inert gas G1) into both a first flow level 153A and a second flow level 153B. Figure 3B In this process, the first supply valve 313 is closed to stop the first active gas R1, while the second connection valve 325 is opened to supply inert gas G1 to the first flow level 153a through the connection line 326.

[0087] like Figure 3C As shown, the method includes moving one or more substrates 107 from a first position to a second position (e.g., a lower position) and allowing a second active gas R2 to flow into a second set of flow levels 153b. When in the second position, the second set of flow levels 153b corresponds to a first side of each of the plurality of substrates 107, such that the second active gas R2 processes the first layer 401 respectively. For example, the second active gas R2 can form layers, clean (e.g., pre-clean), or etch the first layer 401 respectively. As an example, the second active gas R2 can form a second layer 402 (e.g., ...) on the first layer 401 of the plurality of substrates 107 respectively. Figure 4(As shown). The second active gas R2 has a different composition than the first active gas R1. In one or more embodiments, the first layer 401 has a first composition, while the second layer 402 has a second composition different from the first composition. Figure 3C In this process, the third connecting valve 335 is closed, while the second supply valve 323 is opened to supply the second active gas R2 through the second supply line 324 and the second set of valves 321 and 322.

[0088] like Figure 3D As shown, the method includes simultaneously introducing a second gas flow (including inert gas G1) into a second flow level 153B and a first flow level 153A. Figure 3D In this process, the second supply valve 323 is closed to stop the second active gas R2, while the second connection valve 325 is opened to supply inert gas G1 to the first flow level 153a through the connection line 326.

[0089] In one or more embodiments, the inert gas G1 comprises a purifying gas. In one or more embodiments, the first active gas R1 and the second active gas R2 each comprise a deposition gas, a cleaning gas (e.g., for pre-cleaning the substrate 107 or components of the cleaning process chamber 100), and / or an etching gas. The cleaning gas may comprise plasma and / or atomic radicals. In one or more embodiments, the first active gas R1 is one of a deposition gas, an etching gas, or a cleaning gas, and the second active gas R2 is the other of a deposition gas, an etching gas, or a cleaning gas.

[0090] Figure 4 This is based on the use of one or more embodiments. Figures 3A to 3D A schematic cross-sectional side view of the substrate structure 400 formed by the method shown. A first layer 401 is formed on a first side of the substrate 107, and a second layer 402 is formed on the first layer 401.

[0091] Figure 5 This is based on the use of one or more embodiments. Figures 3A to 3D A schematic cross-sectional side view of the substrate structure 500 formed by the method shown. Multiple first layers 401 and multiple second layers 402 are formed alternately on a first side of the substrate 107. This process can be repeated through one or more iterations. Figures 3A to 3D The operation is used to create the stack of layers 401 and 402. For example, in Figure 3D Afterwards, substrate 107 can move upwards back to its original position. Figure 3A The first position shown can be repeated. Figures 3A to 3D The operation.

[0092] Figure 6This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 300 during a substrate processing method according to one or more embodiments.

[0093] exist Figure 6 In this configuration, the first supply valve 313 and the first set of valves 311 and 312 are opened to supply the first active gas R1 through the first supply line 314 and the first flow controller 310, and the second supply valve 323 and the second set of valves 321 and 322 are opened to supply the second active gas R2 through the second supply line 324 and the second flow controller 320. Connecting valve 315, the second connecting valve 325, and the third connecting valve 335 are closed, and the third supply valve 332 and valve 331 are opened to supply inert gas G1 through the third supply line 333 and the third flow controller 330. Figure 6 In the middle, connecting valve 315 is closed.

[0094] The first set of flow levels 153a corresponds to the first side of the plurality of substrates 107, and the second set of flow levels 153b corresponds to the second side of the plurality of substrates 107. In one or more embodiments, Figure 6 A first active gas R1 processes (e.g., by forming a layer, etching, or cleaning) a first side of substrate 107, while a second gas flow R2 simultaneously processes a second side of substrate 107. In one or more embodiments, Figure 6 The first active gas R1 in the substrate 107 forms a first layer 801 on the first side (e.g., Figure 8 As shown), while the second airflow R2 simultaneously forms a second layer 802 on the second side of the substrate 107 (as shown). Figure 8 (As shown). In Figure 6 In the implementation method, the first gas flow includes a first active gas R1, and the second gas flow includes a second active gas R2.

[0095] Figures 7A to 7B This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 300 during a substrate processing method according to one or more embodiments.

[0096] exist Figure 7A In this process, the first active gas R1 flows into the first flow level 153a, while the inert gas G1 simultaneously flows into the second flow level 153b and the lower flow level 153c. Figure 7A In the middle, the gas circuit 300 can utilize a similar Figure 3A Configure it in this way. Figure 7A In the implementation method, the first gas flow includes a first active gas R1, and the second gas flow includes an inert gas G1.

[0097] exist Figure 7BIn this process, the second active gas R2 flows into the second flow level 153b, while the inert gas G1 simultaneously flows into the first flow level 153a and the lower flow level 153c. Figure 7A and Figure 7B In the middle, substrate 107 is in the first position. Figure 7A In the middle, the gas circuit 300 can utilize a similar Figure 3C Configure it in this way.

[0098] Gas circuit 300 can utilize similar Figure 7A and Figure 7B Between and / or Figure 7B After Figure 3B and Figure 3D The substrate 107 is configured in such a manner that, when the substrate 107 is in the first position, inert gas G1 is supplied to the first flow level 153a, the second flow level 153b, and the lower flow level 153c.

[0099] In one or more embodiments, Figure 7A The operations respectively process (e.g., by forming a layer, etching, or cleaning) the first side of the substrate 107, while Figure 7B The operations then proceed to process the second side of substrate 107. In one or more embodiments, Figure 7A The operation forms a first layer 801 on the first side of the substrate 107. Figure 8 (as shown), and Figure 7B The operation then forms a second layer 802 on the second side of the substrate 107. Figure 8 (As shown).

[0100] Figure 8 This is based on the use of one or more embodiments. Figure 6 The method shown or Figures 7A to 7B A schematic cross-sectional side view of the substrate structure 800 formed by the method shown.

[0101] Figure 9 This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 300 during a substrate processing method according to one or more embodiments.

[0102] exist Figure 9In this process, a first gas flow including a first active gas R1 is simultaneously supplied to both a first flow level 153a and a second flow level 153b. A first supply valve 313 along the first supply line 314 is opened to supply the first gas flow (including the first active gas R1) to the first flow level 153a, a second supply valve 323 along the second supply line 324 is closed, and a connecting valve 315 between the first supply line 314 and the second supply line 324 is opened to supply the first gas flow (including the first active gas R1) to the second flow level 153b.

[0103] Figure 10 This is based on the use of one or more embodiments. Figure 9 The diagram shows a schematic cross-sectional side view of the substrate structure 1000 formed by the method shown. A first layer 1001 is formed on a first side of the substrate 107, and a second layer 1002 is formed on a second side of the substrate 107. The second layer 1002 may have the same composition as the first layer 1001. The second layer 1002 may have the same thickness as the first layer 1001 or a different thickness.

[0104] Figure 11 This is a schematic cross-sectional side view of a substrate structure 1100 according to one or more embodiments.

[0105] By first Figure 6 operation or Figures 7A to 7B The operation involves forming a first layer 401 on a first side of the substrate 107 and a layer 1101 on a second side of the substrate 107 to form a substrate structure 1100. Then, the following can be performed: Figures 3C to 3D The operation is performed to form the second layer 402 on the first layer 401. Then, Figures 3A to 3D The operation can be performed once or multiple times to form one or more stacks of the first layer and the second layers 401, 402 on the second layer 402. Layer 1101 may have the same composition as the second layer 402. Layer 1101 may have the same thickness as the second layer 402 or a different thickness.

[0106] Figure 12 This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 300 during a substrate processing method according to one or more embodiments.

[0107] The gas circuit 300 also includes a fourth supply valve 343 and a fourth supply line 344 in fluid communication with the second flow controller 320. A first gas flow including a first active gas R1 processes (e.g., by forming a layer, etching, or cleaning) a first side of a plurality of substrates 107, while a second gas flow from the fourth supply valve 343 and the fourth supply line 344 includes a second active gas R3 processing a second side of the plurality of substrates 107. In one or more embodiments, the first gas flow including the first active gas R1 forms a first layer 401 on a first side of a plurality of substrates 107, while the second gas flow from the fourth supply valve 343 and the fourth supply line 344 forms a second layer 1301 on a second side of a plurality of substrates 107. Figure 13 The second active gas R3 (as shown in the figure).

[0108] Figure 13 This is based on the use of one or more embodiments. Figure 12 A schematic cross-sectional side view of the substrate structure 1300 formed by the method shown.

[0109] The first layer 401 has a first component, while the second layer 1301 has a second component that is different from the first component.

[0110] Figure 14 This is a schematic cross-sectional side view of a substrate structure 1400 according to one or more embodiments.

[0111] By first Figure 12 The first layer 401 and the second layer 1301 are formed through operations to form the substrate structure 1400. Then, the following can be performed: Figures 3C to 3D The operation (using reactive gas R2 (which can be referred to as the third reactive gas)) is used to form layer 402 (which can be referred to as the third layer) on the first layer 401. Then, Figures 3A to 3D The operation can be performed once or multiple times to form one or more stacks of the first layer and the third layers 401, 402 on the third layer 402. The second layer 1301 may have a different composition than the first layer 401 and the third layer 402.

[0112] Figures 15A to 15F This is a schematic partial cross-sectional side view of the processing chamber 100 and the gas circuit 300 during the substrate processing method.

[0113] exist Figures 15A to 15F In the implementation shown, relative to Figures 3A to 3D As shown, the positions of the first flow level 153a and the second flow level 153b are interchanged. Figures 15A to 15F In the implementation shown, relative to Figures 3A to 3DThe positions shown are swapped with those of the first group of valves 311, 312, the first flow controller 310, the first supply valve 313, and the first supply line 314, and the second group of valves 321, 322, the second flow controller 320, the second supply valve 323, and the second supply line 324.

[0114] exist Figure 15A In the process, a first gas flow including a first active gas R1 flows into a first flow level 153a through a first flow controller 310, while a second gas flow including an inert gas G1 flows into a second flow level 153b through a second flow controller 320.

[0115] exist Figure 15B In this process, the flow of the first active gas R1 is stopped, while the inert gas G1 flows into the first flow level 153a through the first flow controller 310, and at the same time, the inert gas G1 flows into the second flow level 153b.

[0116] exist Figure 15A and Figure 15B In the middle, the substrate 107 is in a first position (e.g., the upper position).

[0117] exist Figure 15C In this process, substrate 107 moves from a first position to a second position (e.g., a lower position). Figure 15C In the process, a first gas flow including a first active gas R1 is repeatedly introduced into a first flow level 153A, while a second gas flow including an inert gas G1 continues to flow through a second flow controller 320 into a second flow level 153b.

[0118] When in the first position, the first set of flow levels 153a respectively correspond to the first side of the plurality of substrates 107 ( Figure 15A , Figure 15B , Figure 15E ,and Figure 15F (the lower side of the middle), while when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 (the lower side of the middle), and when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 (the lower side of the middle), while when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 ( Figure 15C and Figure 15D The upper side of the substrate). When the multiple substrates are respectively in the first position and the second position, the first active gas R1 processes (e.g., by forming a layer, etching, or cleaning) the first and second sides of the multiple substrates 107. In one or more embodiments, when the multiple substrates 107 are respectively in the first position and the second position, the first active gas R1 forms a first layer 401, 1601 on the first and second sides of the multiple substrates 107, respectively. Figure 16 (As shown).

[0119] exist Figure 15DIn this process, the flow of the first active gas R1 is stopped, while the inert gas G1 flows into the first flow level 153a through the first flow controller 310, and at the same time, the inert gas G1 flows into the second flow level 153b.

[0120] exist Figure 15E In this process, the substrate moves from the second position back to the first position, while the second active gas R2 flows into the second flow level 153b. The inert gas G1 and the second active gas R2 flow simultaneously into the first flow level 153a.

[0121] exist Figure 15F In this process, the flow of the second active gas R2 is stopped, while the inert gas G1 flows into the second flow level 153b through the second flow controller 320, and at the same time, the inert gas G1 flows into the first flow level 153a.

[0122] Figure 16 This is a schematic cross-sectional side view of a substrate structure 1600 according to one or more embodiments.

[0123] By first Figure 15A The operation is to form a first layer 1601 on a first side of the substrate 107 and to perform Figure 15C The operation involves forming a first layer 401 on the second side of the substrate 107 to form a substrate structure 1600. Then, the following can be performed: Figure 15E The operation is performed to form the second layer 402 on the first layer 401. Then, Figure 15C and Figure 15E The operation can be performed once or multiple times to form one or more stacks of the first layer and the second layers 401, 402 on the second layer 402. The first layer 1601 may have the same composition as the first layer 401. The first layer 1601 may have the same thickness as the first layer 401 or a different thickness. This disclosure is intended to be omitted. Figure 15A and Figure 15B The operation allows the first layer 1601 to be omitted.

[0124] Figures 17A to 17F This is a schematic partial cross-sectional side view of the processing chamber 100 and the gas circuit 300 during the substrate processing method.

[0125] exist Figure 17A In this process, a first gas flow including a first active gas R1 flows through a first flow controller 310 into a first flow level 153a, while a second gas flow including an inert gas G1 flows simultaneously through a second flow controller 320 and a third flow controller 330 into a second flow level 153b and a lower flow level 153c. Figure 17AIn the middle, the gas circuit 300 can utilize a similar Figure 15A Configure it in this way.

[0126] exist Figure 17B In this process, the flow of the first active gas R1 is stopped, while the inert gas G1 flows into the first flow level 153a through the first flow controller 310, and at the same time, the inert gas G1 flows into the second flow level 153b.

[0127] exist Figure 17A and Figure 17B In the middle, the substrate 107 is in a first position (e.g., the upper position).

[0128] exist Figure 17C In this process, substrate 107 moves from a first position to a second position (e.g., a lower position). Figure 17C In the process, the first gas flow, including the first active gas R1, is repeatedly introduced into the first flow level 153A.

[0129] The second active gas R2 flows simultaneously with the first gas flow including the first active gas R1 into a first subgroup (e.g., a lower flow level 153b) of the second flow level 153b. The second active gas R2 also flows into the lower flow level 153c via a second connecting valve 325, a third flow controller 330, and a valve 331. The first subgroup may include one or more flow levels 153b. Figure 17C In this implementation, the first subgroup includes flow level 153b between the first group of flow levels 153a. The inert gas G1 may optionally flow into a second subgroup (e.g., a higher flow level 153b) of the second group of flow levels 153b.

[0130] When in the first position, the first set of flow levels 153a respectively correspond to the first side of the plurality of substrates 107 ( Figure 17A , Figure 17B , Figure 17E ,and Figure 17F (the lower side of the middle), while when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 (the lower side of the middle), and when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 (the lower side of the middle), while when in the second position, the first set of flow levels 153a respectively correspond to the second side of the plurality of substrates 107 ( Figure 17C and Figure 17D The upper side of the substrate). When the multiple substrates are respectively in the first position and the second position, the first active gas R1 processes (e.g., by forming a layer, etching, or cleaning) the first and second sides of the multiple substrates 107. In one or more embodiments, when the multiple substrates 107 are respectively in the first position and the second position, the first active gas R1 forms a first layer 401, 1801 on the first and second sides of the multiple substrates 107, respectively. Figure 18(As shown). When the plurality of substrates 107 are in the second position, the second active gas R2 treats the first side of the plurality of substrates 107 respectively (e.g., the first layer 1801 on the first side (if used)). In one or more embodiments, when the plurality of substrates 107 are in the second position, the second active gas R2 forms a second layer 1802 on the first layer 1801 on the first side of the plurality of substrates 107 respectively.

[0131] exist Figure 17D In this process, the flow of the first active gas R1 and the flow of the second active gas R2 are stopped, while the inert gas G1 flows into the first flow level 153a through the first flow controller 310, and at the same time, the inert gas G1 flows into the second flow level 153b.

[0132] exist Figure 17E In this process, the substrate moves from the second position back to the first position, and the first active gas R1 flows into the first group of flow levels 153a, while the second active gas R2 flows into the second group of flow levels 153b simultaneously with the flow of the first active gas R1. The second active gas R2 flows into the second subgroup of the second group of flow levels 153b (e.g., flow levels 153b between the first group of flow levels 153a) simultaneously with the flow of the first gas stream including the first active gas R1. The second active gas R2 also flows into the uppermost flow level 153b of the second group. The inert gas G1 flows into the lower flow level 153c.

[0133] exist Figure 17F In this process, the flow of the first active gas R1 and the flow of the second active gas R2 are stopped, while the inert gas G1 flows into the second flow level 153b through the second flow controller 320, and at the same time, the inert gas G1 flows into the first flow level 153a through the first flow controller 310.

[0134] Figure 18 This is a schematic cross-sectional side view of a substrate structure 1800 according to one or more embodiments.

[0135] By first Figure 17A The operation is to form a first layer 1801 on a first side of the substrate 107 and to perform Figure 17C The operation involves forming a first layer 401 on the second side of the substrate 107 and forming a second layer 1802 on the first layer 1801 (on the first side of the substrate 107) to form a substrate structure 1800. Then, the following can be performed: Figure 17E The operation involves forming a second layer 402 on the first layer 401 (on the second side of the substrate 107), and forming another first layer 1801 on the second layer 1802 (on the first side of the substrate 107). Then, Figure 17C and Figure 17E The operation can be repeated once or multiple times to form one or more additional layers of the first and second layers 401, 402 on the second side, and one or more additional layers of the first and second layers 1801, 1802 on the first side. The first layer 1801 may have the same composition as the first layer 401, and / or the second layer 1802 may have the same composition as the second layer 1802. The first layer 1801 may have the same thickness as the first layer 401 or a different thickness, and / or the second layer 1802 may have the same thickness as the second layer 402 or a different thickness.

[0136] Figure 19 This is a schematic cross-sectional side view of a substrate structure 1900 according to one or more embodiments.

[0137] By conducting Figure 17C and Figure 17E The operation is omitted. Figure 17A The operation forms the substrate structure 1900. For example, in Figure 17C In this process, a first gas flow including a first active gas R1 flows into a first flow level 153a, while a second gas flow including a second active gas R2 flows into a second flow level 153b. Figure 17E In the middle, the substrate 107 is from the first position (e.g., Figure 17C Move from the lower position in the middle to the second position (e.g., Figure 17E (The upper position in the middle). Figure 17E In this process, the first gas flow is repeatedly introduced into the first group of flow levels 153a, while the second gas flow simultaneously flows into a subgroup of the second group of flow levels 153b (e.g., flow levels 153b between the first group of flow levels 153a). The second active gas R2 also flows into the uppermost flow level 153b of the second group.

[0138] Figure 17C and Figure 17E The operation can be repeated once or multiple times to form one or more additional stacks of the first layer and the second layer 401, 402 and the first layer and the second layer 1801, 1802.

[0139] Figure 20 This is a schematic cross-sectional side view of a substrate structure 2000 according to one or more embodiments.

[0140] By first Figure 6 operation or Figure 7A and Figure 7B The operation involves forming a layer 2002 on a first side of the substrate 107 and forming a first layer 401 on a second side of the substrate 107, and then performing... Figure 3CThe operation is performed to form a second layer 402 on the first layer 401 on the second side of the substrate 107, thereby forming a substrate structure 2000. For example, the substrate 107 can be formed from... Figure 6 or Figures 7A to 7B The first position (e.g., the upper position) is moved to Figure 3C The second position (e.g., the position below).

[0141] Then, Figures 3A to 3D The operation can be performed once or multiple times to form one or more stacks of the first layer and the second layers 401, 402 on the second layer 402. Layer 2002 may have the same composition as the second layer 402. Layer 2002 may have the same thickness as the second layer 402 or a different thickness.

[0142] Figures 21A to 21B This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 2100 during a substrate processing method according to one or more embodiments.

[0143] Gas circuit 2100 is similar to gas circuit 300 and includes one or more aspects, features, components, operations, and / or properties. A first set of valves 311, 312 is in fluid communication with a first flow controller 310 and a first set of injection passages 182a corresponding to a first set of flow levels 153a.

[0144] The second set of valves 321, 322 are in fluid communication with the second flow controller 320 and the second set of injection passages 182b corresponding to the second set of flow levels 153b. The second set of injection passages 182b and the first set of injection passages 182a alternate with each other along the first region 2101 of the plurality of flow levels 153.

[0145] Gas circuit 2100 includes a third flow controller 2130, a third set of valves 2131 and 2132 in fluid communication with the third flow controller 2130 and a third set of injection passages 182c corresponding to a third flow level 153c, a fourth flow controller 2140, and a fourth set of valves 2141 and 2142 in fluid communication with the fourth flow controller 2140 and a fourth set of injection passages 182d corresponding to a fourth flow level 153d. The fourth set of injection passages 182d and the third set of injection passages 182c alternate relative to each other along a second region 2102 of a plurality of flow levels 153. Gas circuit 2100 includes a third supply valve 2113 and a third supply line 2114 in fluid communication with the third flow controller 2130, and a fourth supply valve 2123 and a fourth supply line 2124 in fluid communication with the fourth flow controller 2140. Gas circuit 2100 includes a fourth connecting valve 2115, which is in fluid communication between a first supply line 2114 and a second supply line 2124 located downstream of the first supply valve 2113 and the second supply valve 2123. Gas circuit 2100 includes a second connecting line 2126, a fifth connecting valve 2125, and a sixth connecting valve 2135. Valve 2127 may be disposed along the second supply line 2124 between the sixth connecting valve 2135 and the fourth connecting valve 2115. Gas circuit 2100 includes a fifth flow controller 2150 in fluid communication with valve 331 and an intermediate injection passage 182e corresponding to intermediate flow level 153e. A third plate 2171 is disposed above the second plate 171.

[0146] exist Figures 21A to 21B In the implementation shown, the processing chamber includes ten preheating rings 111a-111j and six arc-shaped support members 112a-112f.

[0147] exist Figure 21A The method includes causing a third airflow to flow into a third flow level 153c, while simultaneously causing a first airflow to flow into a first flow level 153a, and causing a fourth airflow to flow simultaneously with the third airflow into a fourth flow level 153d. The third flow level 153c and the fourth flow level 153d alternate relative to each other. The first airflow includes a first active gas R1, the second airflow includes an inert gas G1, the third airflow includes a second active gas R2, and the fourth airflow includes an inert gas G1. In one or more embodiments, the first active gas R1 is a deposition gas, and the second active gas R2 is a cleaning gas for cleaning the processing chamber 100 below the first plate 1032. In one or more embodiments, the first active gas R1 is an etching gas or a cleaning gas (e.g., a pre-cleaning gas), and the second active gas R2 is a cleaning gas for cleaning the processing chamber 100 below the first plate 1032.

[0148] exist Figure 21A In the middle, the substrate 107 is in a first position (e.g., the upper position).

[0149] exist Figure 21B In this process, substrate 107 moves from a first position to a second position (e.g., a lower position). A second active gas R2 flows into a first set of flow levels 153a, and inert gas G1 is repeatedly flowed into a second set of flow levels 153b. A third active gas R3 flows into a third set of flow levels 153c, and inert gas G1 is repeatedly flowed into a fourth set of flow levels 153d. In one or more embodiments, the second active gas R2 is a cleaning gas for cleaning the processing chamber 100 above the third plate 2171, while the third active gas R3 is a deposition gas. In one or more embodiments, the second active gas R2 is a cleaning gas for cleaning the processing chamber 100 above the third plate 2171, while the third active gas R3 is an etching gas or a cleaning gas (e.g., a pre-cleaning gas).

[0150] Figures 22A to 22B This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 2100 during a substrate processing method according to one or more embodiments. The method is similar to... Figures 3A to 3D The method is shown and includes one or more aspects, features, components, operations, and / or properties thereof.

[0151] A single substrate 107 is processed in one step, omitting the second substrate 171. In Figure 22A In this process, a first active gas R1 flows into a first flow level 153a to form a first layer 401 on the substrate 107, while an inert gas G1 flows into a second flow level 153b. This disclosure anticipates that valve 2235 can be disposed along a second supply line 324 between connecting valve 315 and third connecting valve 335.

[0152] exist Figure 22B In the process, the second active gas R2 flows into the first flow level 153a to etch the first layer 401 on the substrate 107, while the inert gas G1 flows into the second flow level 153b.

[0153] This disclosure is expected to Figure 22B It is possible Figure 22A Previously carried out, Figure 22B The active gas R2 is a pre-cleaning gas for cleaning substrate 107 (e.g., removing oxides from substrate 107), while Figure 22AThe active gas R1 is the deposition gas used to deposit the first layer 401 on the cleaned substrate 107. The second active gas R2 used for etching and / or pre-cleaning may include plasma, and / or may be plasma-assisted. In one or more embodiments, the second active gas R2 includes atomic radicals (e.g., atomic hydrogen radicals and / or atomic argon radicals).

[0154] Figures 23A to 23B This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 2100 during a substrate processing method according to one or more embodiments. The method is similar to... Figures 3A to 3D The method is shown and includes one or more aspects, features, components, operations, and / or properties thereof.

[0155] A single substrate 107 is processed in one step, including a second substrate 171 and a third substrate 2171. In Figure 23A In the process, the first gas flow (e.g., the first active gas R1) passes through at least one of the first set of valves 311, 312 (e.g., Figure 23A The lower valve 311) flows into at least one of the first flow levels 153a (e.g., Figure 23A In the lower flow level 153a of the first set of flow levels 153a, a first layer 401 is formed on the substrate 107. The lower flow level 153a may be referred to as the first flow level. Inert gas G1 may optionally flow or not flow into flow level 153b. First active gas R1 flows through one or more sidewalls of the chamber body and flows across the substrate 107 in a crossflow manner from one side of the substrate 107. The second flow level 2353 between the first set of flow levels 153a includes a plurality of gas exhaust passages 2372 on opposite sides of the processing volume 128. The gas exhaust passages 2372 may be at least partially circumferentially in fluid communication with each other around the processing volume 128. For example, the gas exhaust passages 2372 may include one or more openings extending arcuately in the chamber body 130. Figure 23A In the middle, the substrate 107 is in a first position (e.g., the lower position).

[0156] A first arc-shaped support member 112b supports a base plate 107. A second arc-shaped support member 112c, spaced apart from the first arc-shaped support member 112b, supports a plate 2369. A third arc-shaped support member 112d, spaced apart from the second arc-shaped support member 112c, supports a second plate 171. A fourth arc-shaped support member 112e, spaced apart from the third arc-shaped support member 112d, supports a third plate 2171. The second plate 171 is positioned above the plate 2369, and the third plate 2171 is positioned above the second plate 171.

[0157] like Figure 23AAs shown, plate 2369 is sized and shaped to be positioned on the second arcuate support 112c, second plate 171 is sized and shaped to be positioned on the third arcuate support 112d, and third plate 2171 is sized and shaped to be positioned on the fourth arcuate support 112e. In one or more embodiments, the inner dimension ID1 (e.g., inner diameter) of the second arcuate support 112c is smaller than the inner dimension ID2 (e.g., inner diameter) of the first arcuate support 112b.

[0158] exist Figure 23B In this process, substrate 107 moves from a first position to a second position (e.g., an upper position). Plate 2369 is disposed between substrate 107 and second plate 171. Plate 2369 is similar to plate 169 and includes one or more aspects, features, components, operations, and / or properties thereof. A plurality of openings 2370 are formed through plate 2369, such that plate 2369 can be used as... Figure 23B The gas distribution plate (e.g., a spray head) is included. In one or more embodiments, the plurality of openings include a plurality of through holes extending through the plate 2369. In one or more embodiments, the second plate 171 has a solid cross-section spanning the outer dimension (e.g., outer diameter) of the second plate 171. In one or more embodiments, the third plate 2171 has a solid cross-section spanning the outer dimension (e.g., outer diameter) of the third plate 2171.

[0159] Plate 2369 comprises (e.g., formed therefrom and / or coated therewith) one or more of the following: quartz (e.g., transparent quartz (e.g., pure quartz), opaque quartz (e.g., white quartz, gray quartz, and / or black quartz)), silicon carbide (SiC), graphite coated with SiC and / or opaque quartz, and / or one or more ceramics (e.g., bauxite (alumina (Al2O3)), aluminum nitride (AlN), silicon nitride (Si3N4), boron nitride (BN), and / or boron carbide (B4C)). In one or more embodiments, plate 2369 is formed of or coated with SiC. In one or more embodiments, plate 2369. The materials described for plate 2369 can be used for the aforementioned plate 169, second plate 171, third plate 2171, and / or first plate 1032. Plate 2369 may be transparent or opaque. In one or more embodiments, plate 2369 includes at least one opaque outer surface 2369a, 2369b (in... Figure 23A and Figure 23B (Multiple are shown in the diagram). At least one opaque outer surface 2369a, 2369b may be part of any opaque material described herein.

[0160] The second gas flow (e.g., the second active gas R2) passes through at least one of the first set of valves 311, 312 (e.g., Figure 23BThe upper valve 312) flows into at least one of the first flow levels 153a (e.g., Figure 23B The second active gas R2 flows into the higher flow level 153a of the first set of flow levels 153a. The higher flow level 153a may be referred to as the third flow level. The second active gas R2 flows into the higher flow level 153a, passes through the plate 2369 disposed above the substrate 107, and enters the second flow level 2353 to etch the first layer 401 on the substrate 107. The second active gas R2 flows above the substrate 107 after flowing through the plate 2369. In one or more embodiments, the second active gas R2 flows through the opening 2370. The second active gas R2 flows into the substrate 107 from above the substrate 107, and the second active gas R2 flows radially above the substrate 107. As an example, the second active gas R2 flows radially outward across the substrate 107. This disclosure contemplates that the plate 2369 may be disposed below the substrate 107, and the second active gas R2 may flow into the substrate 107 from below the substrate 107.

[0161] Inert gas G1 may optionally flow or not flow into flow level 153b. A second active gas R2 can be pumped circumferentially from flow level 2353 using gas venting passage 2372. One or more second venting valves 2391, 2392 (two shown) are in fluid communication with flow level 2353 and one or more second pumping devices 2397, 2398. In one or more embodiments, one or more second venting valves 2391, 2392 are in... Figure 23A It was shut down during operation, and then... Figure 23A and Figure 23B Between and Figure 23B It is opened during operation. Figure 23A and Figure 23B Before moving the substrate 107, one or more second exhaust valves 2391, 2392 can be opened. In one or more embodiments, one or more second exhaust valves 2391, 2392 are... Figure 23A It is opened at least partially during the period. The exhaust valve 391 can... Figure 23A It was opened during the period, and Figure 23B It can be turned on or off during this period.

[0162] exist Figure 23A and Figure 23B Subsequently, inert gas G1 and / or clean gas can flow through flow levels 153a, 153b, and 2353.

[0163] This disclosure is expected to Figure 23B It is possible Figure 23A Previously carried out, Figure 23BThe active gas R2 is a pre-cleaning gas for cleaning substrate 107 (e.g., removing oxides from substrate 107), while Figure 23A The active gas R1 is the deposition gas used to deposit the first layer 401 on the cleaned substrate 107. The second active gas R2 used for etching and / or pre-cleaning may include plasma, and / or may be plasma-assisted. In one or more embodiments, the second active gas R2 includes atomic radicals (e.g., atomic hydrogen radicals and / or atomic argon radicals).

[0164] This disclosure contemplates that the second active gas R2 may flow from above the third plate 2171 (e.g., through the cover 104 of the processing chamber 100), through the third plate 2171, through the second plate 171, and through the opening 2370 of the plate 2369. The second plate 171 and / or the third plate 2171 may include one or more openings formed therein to allow the second active gas R2 to flow through it before flowing through the opening 2370 of the plate 2369. In such an embodiment, the upper heat source 106 may be omitted, and a lower heat source 138 may be included.

[0165] Figures 24A to 24B This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 2100 during a substrate processing method according to one or more embodiments. The method is similar to... Figures 23A to 23B The method is shown and includes one or more aspects, features, components, operations, and / or properties thereof.

[0166] exist Figure 24A In the process, the first gas flow (e.g., the first active gas R1) passes through at least one of the first set of valves 311 (e.g., Figure 24A The lower valve 311) flows into at least one of the first flow levels 153a (e.g., Figure 24A In the lower flow level 153a), a first layer 401 is formed on the substrate 107. The lower flow level 153a may be referred to as the first flow level. The inert gas G1 may optionally flow or not flow into the lower flow level 153b of the second set of flow levels 153b. The first active gas R1 flows through one or more sidewalls of the chamber body and flows across the substrate 107 in a crossflow manner from one side of the substrate 107.

[0167] The second plate 171 includes a plurality of second openings 2470 formed therein. In one or more embodiments, a first number of the plurality of openings 2370 is greater than a second number of the plurality of second openings 2470. In one or more embodiments, the plurality of second openings 2470 is larger than the plurality of openings 2370. The second plate 171 can be used in addition to plate 2369 as... Figure 24BThe second gas distribution plate (e.g., a second spray head) is included. In one or more embodiments, the plurality of second openings 2470 include a plurality of through holes extending through the second plate 171.

[0168] exist Figure 24B In the process, the second gas flow (e.g., the second active gas R2) passes through at least one of the first set of valves 311, 312 (e.g., Figure 24B The upper valve 312) flows into at least one of the first flow levels 153a (e.g., Figure 24B The second active gas R2 flows into the higher flow level 153a of the first set of flow levels 153a. The higher flow level 153a may be referred to as the third flow level. The second active gas R2 flows into the higher flow level 153a, passes through the second plate 171 disposed above the plate 2369, passes through the plate 2369 disposed above the substrate 107, and enters the second flow level 2353 to etch the first layer 401 on the substrate 107. The second active gas R2 flows above the substrate 107 after flowing through the second plate 171 and the plate 2369. This disclosure contemplates that the plate 2369 and / or the second plate 171 may be disposed below the substrate 107. In one or more embodiments, the second active gas R2 flows through the second opening 2470 and flows through the opening 2370. The second active gas R2 flows into the substrate 107 from above the substrate 107, and the second active gas R2 flows radially above the substrate 107.

[0169] Inert gas G1 may optionally flow or not flow into flow level 153b and / or the first flow level 153a. A second active gas R2 may be pumped circumferentially from flow level 2353 using gas venting passage 2372. In one or more embodiments, the chamber body includes a pumping ring 2410, which includes an arcuate vent opening 2430 in fluid communication with one or more venting passages 2372 of the second flow level 2353. In one or more embodiments, the arcuate vent opening 2430 extends circumferentially around the processing volume 128. The arcuate vent opening 2430 extends circumferentially around the body of the pumping ring 2410. The arcuate vent opening 2430 is disposed between the pumping ring 2410 and a cover plate 2420. The cover plate 2420 is disposed on the pumping ring 2410. As the second active gas R2 flows out of the second flow level 2353, it flows over the protrusion 2414 of the pumping ring 2410, through one or more openings 2422 of the cover plate 2420, and into the arcuate exhaust opening 2430. Then, the second active gas R2 flows through one or more openings 2411 of the pumping ring 2410 into one or more exhaust passages 2372. The one or more openings 2422 may include a plurality of openings circumferentially arranged around the processing volume 128. The one or more openings 2411 may include a plurality of openings that may span the processing volume 128 opposite to each other.

[0170] Pumping ring 2410 and cover plate 2420 can be used Figure 23A and Figure 23B The method is illustrated. In one or more embodiments, the pumping ring 2410 comprises metal, while the cover plate 2420 comprises the same material as described for one or more gaskets 180 and / or plates 2369. In one or more embodiments, the pumping ring 2410 comprises the same material as described for one or more gaskets 180 and / or plates 2369.

[0171] In one or more embodiments, one or more second exhaust valves 2391, 2392 are Figure 24A It was shut down during operation, and then... Figure 24A and Figure 24B Between and Figure 24B It is opened during operation. Figure 24A and Figure 24B Before moving the substrate 107, one or more second exhaust valves 2391, 2392 can be opened. In one or more embodiments, one or more second exhaust valves 2391, 2392 are... Figure 24A It is opened at least partially during the period. The exhaust valve 391 can... Figure 24A It was opened during the period, and Figure 24BThe flow can be turned on or off during this period. In one or more embodiments, the inert gas IG1 can flow simultaneously with the flow of the second active gas R2 through a lower flow level 153a.

[0172] exist Figure 24A and Figure 24B Subsequently, inert gas G1 and / or clean gas can flow through flow levels 153a, 153b, and 2353.

[0173] This disclosure is expected to Figure 24B It is possible Figure 24A Previously carried out, Figure 24B The active gas R2 in the process can be a pre-cleaning gas for cleaning the substrate 107 (e.g., removing oxides from the substrate 107), while Figure 24A The active gas R1 can be the deposition gas used to deposit the first layer 401 on the cleaned substrate 107.

[0174] This disclosure contemplates that the second active gas R2 may flow from above the third plate 2171 (e.g., through the cover 104 of the processing chamber 100), through the third plate 2171, through the second opening 2470 of the second plate 171, and through the opening 2370 of the plate 2369. The third plate 2171 may include one or more openings formed therein to allow the second active gas R2 to flow through it before flowing through the second opening 2470 of the third plate 2171. In such an embodiment, the upper heat source 106 may be omitted, and a lower heat source 138 may be included.

[0175] This disclosure is expected to be made in the future. Figure 23A and Figure 24B and / or Figure 24A and Figure 24B The third plate 2171 and / or the second plate 171 may be omitted. This disclosure contemplates that one or more of the plates 2369, the second plate 171, or the third plate 2171 may be coupled together (e.g., fused together and / or integrated together).

[0176] This disclosure also contemplates that one or more of plate 2369, second plate 171 (if used), or third plate 2171 (if used) may be disposed on a stationary portion of the processing chamber 100 (e.g., the inner protrusion of one or more pads 180). In such an embodiment, plates 169, 171, and 2171 may remain stationary as the housing 1030 supporting the substrate 107 is raised and lowered. In such an embodiment, a second active gas R2 may flow from above the plates (e.g., through cover 104).

[0177] Figure 25 According to one or more embodiments Figure 24BA schematic partial top view of the second flow level 2353 shown.

[0178] The arc-shaped exhaust opening 2430 is located between the first wall 2412 (e.g., inner wall) of the pumping ring 2410 and the second wall 2425 (e.g., outer wall) of the cover plate 2420. Figure 25 The diagram shows the second active gas R2 flowing radially.

[0179] Figure 26 According to one or more embodiments Figure 24A A schematic partial top view of the first flow level 153b shown.

[0180] Figure 26 The diagram shows the first active gas R1 flowing in a crossflow manner.

[0181] Figure 27 According to one or more embodiments Figure 24A and Figure 24B A schematic perspective top view of the pumping ring 2410 shown.

[0182] One or more openings 2411 of the pumping ring 2410 are formed in the outer protrusion 2413.

[0183] Figure 28 According to one or more embodiments Figure 24A and Figure 24B A schematic perspective top view of the cover plate 2420 shown.

[0184] Cover plate 2420 includes a tapered outer surface 2416 that corresponds to the pumping ring 2410. Figure 27 (As shown) the conical inner surface 2426 of the boundary.

[0185] Figure 29 This is a schematic perspective top view of a pumping ring 2910 according to one or more embodiments.

[0186] Pumping ring 2910 can be used as a replacement Figure 24A , Figure 24B ,and Figure 28 The pumping ring 2410 is shown. The pumping ring 2910 includes one or more aspects, features, components, operations, and / or properties of the pumping ring 2410.

[0187] An arc-shaped exhaust opening 2430 extends circumferentially around the body of the pumping ring 2910. A cover plate 2420 may be used or omitted with respect to the pumping ring 2910. As the second active gas R2 flows out of the second flow level 2353, the second active gas R2 flows through one or more openings 2922 and enters the arc-shaped exhaust opening 2430. The second active gas R2 then flows through one or more openings 2911 of the pumping ring 2910 and the second arc-shaped exhaust opening 2930 of the pumping ring 2910 into one or more exhaust passages 2372. The one or more openings 2922 may include a plurality of openings circumferentially arranged around the processing volume 128. The one or more openings 2911 may include a plurality of openings that may span the processing volume 128 opposite to each other.

[0188] In one or more embodiments, controller 1070 controls the components described herein (e.g., valves and / or flow controllers) to cause operation of the methods described herein. For example, regarding Figure 21A and Figure 21B The controller 1070 can open the first set of valves 311 and 312 to allow a first airflow (including the first active gas R1) to flow into the first flow level 153b, and the controller 1070 can open the second set of valves 321 and 322 to allow a second airflow (including the purified gas G1) to flow into the second flow level 153b. When the first active gas R1 flows, the controller 1070 can also power one or more heat sources (e.g., heat sources 106 and 138). The controller 1070 can power a lifting device (e.g., one or more motors 164) to lift the substrate 107 from... Figure 21A The first position in the middle is moved to Figure 21B The controller 1070 can then close the first connection valve 315 and open the second supply valve 323 to allow the third gas flow (including the second active gas R2) to flow into the second flow level 153b. The controller 1070 can also close the first supply valve 313 and open the second connection valve 325 to allow the second gas flow (including the inert gas G1) to flow into the first flow level 153a.

[0189] As another example, regarding Figure 3C The controller 1070 can close the first connection valve 315 and the first supply valve 313. The controller 1070 can also open the second connection valve 325 to allow the second gas flow (including inert gas G1) to flow into the first flow level 153a, and open the second supply valve 323 to allow the third gas flow (including the second active gas R2) to flow into the second flow level 153b.

[0190] As another example, regarding Figure 3CThe controller 1070 can close the first connection valve 315 and the first supply valve 313. The controller 1070 can also open the second connection valve 325 to allow the second gas flow (including inert gas G1) to flow into the first flow level 153a, and open the second supply valve 323 to allow the third gas flow (including the second active gas R2) to flow into the second flow level 153b.

[0191] As another example, regarding Figure 6 The controller 1070 can close the first supply valve 313. The controller 1070 can also open the connection valve 315 to allow the second gas flow (including the second active gas G2) to flow into the first flow level 153a. Then, the controller 1070 can close the second supply valve 323, open the third supply valve 332, and open the third connection valve 335 to allow the third gas flow (including the inert gas G1) to flow into the second flow level 153b.

[0192] This disclosure contemplates that simultaneously flowing active gases may involve the same pressure and / or the same temperature. This disclosure also contemplates that active gases involving different pressures and / or different temperatures may flow sequentially relative to each other. As described herein, the process (e.g., deposition or cleaning) may be applied to one side of the substrate and / or to both sides of the substrate.

[0193] Figure 30 This is a schematic partial cross-sectional side view of the processing chamber 100 and gas circuit 2100 during a substrate processing method according to one or more embodiments. The method is similar to... Figures 24A to 24B The method is shown and includes one or more aspects, features, components, operations, and / or properties thereof.

[0194] exist Figure 30 In the implementation shown, the first plate 1032, the substrate 107, 2370, the plate 2369, the plate 171, and / or the second plate 2171 can be supported by one or more inner protrusions of the respective arcuate support members 112a-112e.

[0195] Preheating rings 111a-111f each include a recessed inner surface defining the inner protrusions 3061a-3061f. The inner diameters of the recessed inner surfaces and the inner protrusions 3061a-3061f gradually decrease from the lowermost preheating ring 111f to the uppermost preheating ring 111e. For example, the first preheating ring 111a includes a first inner protrusion 3061a having a first inner diameter, the second preheating ring 3061b includes a second inner protrusion 3061b having a second inner diameter smaller than the first inner diameter, and the third preheating ring 111c includes a third inner protrusion 3061c having a third inner diameter smaller than the second inner diameter.

[0196] The arc-shaped supports 112a-112e each include a recessed outer surface defining the outer protrusions 3063a-3063e. The outer diameter of the recessed outer surface and the outer protrusions 3063a-3063e gradually decreases from the lowermost arc-shaped support 112a to the uppermost arc-shaped support 112e. The inner protrusions 3061a-306e of the preheating rings 111a-111f overlap with the outer edges 3063a-3063e of the arc-shaped supports 112a-112e.

[0197] The benefits of this disclosure include modularity in processing applications using a single processing chamber and / or a single gas loop (e.g., forming various device structures (e.g., complex structures) and / or performing various cleaning operations); higher membrane growth rates; enhanced gas activation; uniform membrane growth; increased throughput; and reduced chamber footprint. The benefits of this disclosure also include enhanced device performance and regional thermal control and adjustability.

[0198] This can facilitate the benefits of processing a single substrate at once and / or processing multiple substrates in batches simultaneously.

[0199] It is anticipated that one or more aspects disclosed herein can be combined. As an example, the processing chamber 100, controller 1070, gas circuit 300, and fourth supply valve 343... Figures 3A to 3D The methods shown, the substrate structure 400 and / or related methods, Figure 6 The method shown Figure 7A and Figure 7B The methods shown, the substrate structure 800 and / or related methods, Figure 9 The methods shown, substrate structure 1000 and / or associated methods, substrate structure 1100 and / or associated methods, Figure 12 The methods shown, substrate structure 1300 and / or associated methods, substrate structure 1400 and / or associated methods, Figures 15A to 15F The methods shown, the substrate structure 1600 and / or related methods, Figures 17A to 17F The methods shown, substrate structure 1800 and / or associated methods, substrate structure 1900 and / or associated methods, substrate structure 2000 and / or associated methods, gas circuit 2100, Figure 21A and Figure 21B The method shown Figure 22A and Figure 22B The method shown Figure 23A and Figure 23B The method shown Figure 24A and Figure 24B The method shown Figure 25 The second flow level 2353 is shown. Figure 26One or more aspects, features, components, operations, and / or properties of various implementations of the first flow level 153b, pumping ring 2410, pumping ring 2910, and / or cover plate 2420 can be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the benefits described above.

[0200] Although the foregoing embodiments relating to this disclosure are provided, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, the scope of which is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: The main body of the chamber includes: Processing volume, Multiple injection paths are formed within the chamber body and arranged at multiple flow levels. One or more exhaust passages are formed in the chamber body; One or more heat sources are configured to heat the processing volume; and A gas circuit, in fluid communication with the main body of the chamber, comprises: First flow controller, The first set of valves is in fluid communication with the first flow controller, and the first set of valves is also in fluid communication with the first set of injection passages. Second flow controller, The second set of valves is in fluid communication with the second flow controller and is in fluid communication with the second set of injection passages, which alternate with the first set of injection passages relative to each other along the plurality of flow levels.

2. The processing chamber of claim 1, wherein the gas circuit further comprises: The first supply valve and the first supply pipeline are in fluid communication with the first flow controller.

3. The processing chamber of claim 2, wherein the gas circuit further comprises: The second supply valve and the second supply line are in fluid communication with the second flow controller.

4. The processing chamber of claim 3, wherein the gas circuit further comprises: A connecting valve is provided, which provides fluid communication between the first supply line and the second supply line at a location downstream of the first supply valve and the second supply valve.

5. The processing chamber of claim 4, wherein the gas circuit further comprises: Third flow controller; and The valve is in fluid communication with the lower injection passage below the first group of injection passages and the second group of injection passages.

6. The processing chamber of claim 5, wherein the gas circuit further comprises: The third supply valve and the third supply line are in fluid communication with the third flow controller.

7. The processing chamber of claim 6, wherein the gas circuit further comprises: The second connecting valve is located downstream of the first supply valve, and the third supply line is in fluid communication with the first supply line.

8. The processing chamber of claim 7, wherein the gas circuit further comprises: A third connecting valve is located downstream of the second supply valve, and the third supply line is in fluid communication with the second supply line.

9. The processing chamber of claim 6, wherein the gas circuit further comprises: The fourth supply valve and the fourth supply line are in fluid communication with the second flow controller.

10. The processing chamber of claim 1, wherein the first flow controller and the second flow controller are each a flow ratio controller (FRC).

11. The processing chamber of claim 1, further comprising a box disposed in the processing volume, the box including a plurality of arcuate supports, and the plurality of injection passages being in fluid communication with respective flow paths above the plurality of arcuate supports.

12. A gas circuit suitable for semiconductor manufacturing, the gas circuit comprising: First flow controller; The first set of valves is in fluid communication with the first flow controller; The first supply valve and the first supply pipeline are in fluid communication with the first flow controller; Second flow controller; The second set of valves is in fluid communication with the second flow controller, and the second set of valves alternates with the first set of valves relative to each other. and The second supply valve and the second supply line are in fluid communication with the second flow controller.

13. The gas circuit of claim 12, wherein the gas circuit further comprises: A connecting valve is provided, which provides fluid communication between the first supply line and the second supply line at a location downstream of the first supply valve and the second supply valve.

14. The gas circuit of claim 13, wherein the gas circuit further comprises: Third flow controller; and The valve is in fluid communication with the third flow controller.

15. The gas circuit of claim 14, wherein the gas circuit further comprises: The third supply valve and the third supply line are in fluid communication with the third flow controller.

16. The gas circuit of claim 15, wherein the gas circuit further comprises: The second connecting valve is located downstream of the first supply valve, and the third supply line is in fluid communication with the first supply line.

17. The gas circuit of claim 16, wherein the gas circuit further comprises: A third connecting valve is located downstream of the second supply valve, and the third supply line is in fluid communication with the second supply line.

18. The gas circuit of claim 15, wherein the gas circuit further comprises: The fourth supply valve and the fourth supply line are in fluid communication with the second flow controller.

19. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: The chamber body includes multiple injection passages arranged at multiple flow levels; and A gas circuit, in fluid communication with the main body of the chamber, comprises: First flow controller, The first set of valves is in fluid communication with the first flow controller, and the first set of valves is also in fluid communication with the first set of injection passages. Second flow controller, The second set of valves is in fluid communication with the second flow controller and with the second set of injection passages. The second set of injection passages alternates with the first set of injection passages relative to each other along a first zone of the plurality of flow levels. Third flow controller, The third set of valves is in fluid communication with the third flow controller, and the third set of valves is also in fluid communication with the third set of injection passages. Fourth flow controller, The fourth set of valves is in fluid communication with the fourth flow controller and is in fluid communication with the fourth set of injection passages, which alternate with the third set of injection passages relative to each other along the second zone of the plurality of flow levels.

20. The processing chamber of claim 19, wherein the gas circuit further comprises: The first supply valve and the first supply pipeline are in fluid communication with the first flow controller; The second supply valve and the second supply line are in fluid communication with the second flow controller; The third supply valve and the third supply line are in fluid communication with the third flow controller; and The fourth supply valve and the fourth supply line are in fluid communication with the fourth flow controller.

21. A substrate processing method, the method comprising: The first airflow is introduced into the first set of flow levels in the processing chamber; Simultaneously with the flow of the first airflow, a second airflow is introduced into a second set of flow levels within the processing chamber, the first and second sets of flow levels alternating relative to each other; and Heating is applied to one or more substrates positioned within the processing chamber.

22. The method of claim 21, wherein the first gas flow comprises a first reactive gas, the second gas flow comprises an inert gas, and the method further comprises: Move the one or more substrates from the first position to the second position; The second reacting gas flows into the second set of flow levels; and Simultaneously with the flow of the second reactant gas, the inert gas is flowed into the first set of flow levels.

23. The method of claim 22, wherein: The one or more substrates include multiple substrates; When in the first position, the first set of flow levels respectively correspond to the first side of the plurality of substrates, such that the first reactant gas forms a first layer on the first side of the plurality of substrates respectively; and When in the second position, the second set of flow levels respectively correspond to the first side of the plurality of substrates, such that the second reactant gas forms a second layer on the first layer, the first layer having a first component and the second layer having a second component different from the first component.

24. The method of claim 21, wherein the one or more substrates comprise a plurality of substrates, the first set of flow levels respectively correspond to a first side of the plurality of substrates, and the second set of flow levels respectively correspond to a second side of the plurality of substrates.

25. The method of claim 24, wherein the first gas flow comprises a first reactive gas that processes a first side of the plurality of substrates respectively, and the second gas flow comprises a second reactive gas that processes a second side of the plurality of substrates respectively, the first reactive gas having a first component, and the second reactive gas having a second component different from the first component.

26. The method of claim 25, wherein the method further comprises: Move the plurality of substrates from the first position to the second position; The second reactant gas flows into the second set of flow levels; and Simultaneously, an inert gas is introduced into the first set of flow levels while the second reactive gas flows into the second set of flow levels.

27. The method of claim 24, wherein the first gas flow comprises a first reactive gas forming a first layer on the first side of the plurality of substrates respectively, and the second gas flow comprises an inert gas, and the method further comprises: A second reactive gas is introduced into the second set of flow levels to form a second layer on the second side of the plurality of substrates, wherein the first layer has a first component and the second layer has a second component different from the first component; and Simultaneously, the inert gas is flowed into the first set of flow levels while the second reactive gas flows into the second set of flow levels.

28. The method of claim 24, wherein the method further comprises: Move the plurality of substrates from the first position to the second position; and The third reactive gas flows into the second group of flow levels.

29. The method of claim 28, wherein the method further comprises: Simultaneously with the flow of the third reacting gas, an inert gas is introduced into the first set of flow levels.

30. The method of claim 21, wherein the first gas flow comprises a first reactive gas, the second gas flow comprises an inert gas, and the method further comprises: Move the one or more substrates from a first position to a second position; and Repeat the process of allowing the first airflow to enter the first set of flow levels.

31. The method of claim 30, wherein: The one or more substrates include multiple substrates; When in the first position, the first set of flow levels corresponds to the first side of the plurality of substrates, and when in the second position, the first set of flow levels corresponds to the second side of the plurality of substrates. When in the first position and the second position, the first reactive gas treats the first side and the second side of the plurality of substrates, respectively; and The method further includes: Move the plurality of substrates from the second position to the first position. The second reacting gas flows into the second set of flow levels, and Simultaneously with the flow of the second reactant gas, the inert gas is flowed into the first set of flow levels.

32. The method of claim 21, wherein the one or more substrates comprise a plurality of substrates, the first gas flow comprises a first reactive gas, the second gas flow comprises an inert gas, and the method further comprises: Move the plurality of substrates from the first position to the second position; Repeat the process of allowing the first airflow to enter the first set of flow levels; Simultaneously with the flow of the first airflow, the second reactant gas flows into the first subgroup of the second flow level; Move the plurality of substrates from the second position to the first position; Repeatedly allow the first airflow to enter the first set of flow levels; and Simultaneously with the flow of the first gas flow, the second reactive gas flows into the second subgroup of the second flow level.

33. The method of claim 21, wherein the one or more substrates comprise a plurality of substrates, the first gas flow comprises a first reactive gas, the second gas flow comprises a second reactive gas, and the method further comprises: Move the plurality of substrates from the first position to the second position; Repeatedly allow the first airflow to enter the first set of flow levels; and Simultaneously with the flow of the first gas flow, the second reactive gas flows into the subgroup of the second flow level.

34. The method of claim 21, further comprising: Simultaneously with the flow of the first airflow, a third airflow is introduced into the third set of flow levels of the processing chamber; and Simultaneously with the flow of the third airflow, a fourth airflow is introduced into the fourth set of flow levels of the processing chamber, the third set of flow levels and the fourth set of flow levels alternating with each other.

35. The method of claim 34, wherein the one or more substrates comprise a plurality of substrates, the first gas flow comprises a first reactive gas, the second gas flow and the fourth gas flow comprise inert gases, the third gas flow comprises a second reactive gas, and the method further comprises: Move the plurality of substrates from the first position to the second position; The second reactant gas is allowed to flow into the first set of flow levels; The inert gas is repeatedly introduced into the second set of flow levels; The third reactant gas flows into the third set of flow levels; and The inert gas is repeatedly flowed into the fourth flow level.

36. A non-transitory computer-readable medium comprising a plurality of instructions, said plurality of instructions, when executed, causing a plurality of operations to be performed, said plurality of operations comprising: Open the first set of valves to allow the first airflow to enter the first set of flow levels; Simultaneously with the flow of the first airflow, a second set of valves is opened to allow a second airflow into a second set of flow levels, the first and second sets of flow levels alternating relative to each other; and Power one or more heat sources.

37. The non-transitory computer-readable medium of claim 36, wherein the plurality of operations further comprises: Power is supplied to the lifting device to move one or more substrates from a first position to a second position; Close the first connecting valve and the first supply valve; Open the second connection valve to allow the second airflow to enter the first set of flow levels; and Open the second supply valve to allow the third airflow to enter the second set of flow levels.

38. The non-transitory computer-readable medium of claim 36, wherein the plurality of operations further comprises: Power is supplied to the lifting device to move one or more substrates from a first position to a second position; Close the first supply valve and open the connection valve to allow the second airflow to enter the first set of flow levels; and Close the second supply valve and open the third supply valve to allow the third airflow to enter the second set of flow levels.

39. A non-transitory computer-readable medium comprising a plurality of instructions, said plurality of instructions, when executed, causing a plurality of operations to be performed, said plurality of operations comprising: Open the first supply valve along the first supply line to supply the first gas flow to the first set of flow levels; Close the second supply valve along the second supply line; and Open the connection valve between the first supply line and the second supply line to supply the first airflow to the second set of flow levels.

40. The non-transitory computer-readable medium of claim 39, wherein the first set of flow levels and the second set of flow levels alternate relative to each other.

41. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: The main body of the chamber includes: Processing volume, Multiple injection channels, formed within the chamber body and arranged in multiple flow levels, and One or more exhaust passages are formed in the main body of the chamber; One or more heat sources are configured to heat the processing volume; First arc-shaped support component; The second arc-shaped support member is spaced apart from the first arc-shaped support member; and The plate is supported by the second arc-shaped support member, and the plate includes a plurality of openings formed therein.

42. The processing chamber of claim 41, wherein the inner dimension of the second arc-shaped support is smaller than the inner dimension of the first arc-shaped support.

43. The processing chamber of claim 41, further comprising: The third arc-shaped support member is spaced apart from the second arc-shaped support member; and The second plate is sized to be supported by the third arc-shaped support.

44. The processing chamber of claim 43, wherein the second plate has a solid cross-section spanning the outer dimensions of the second plate.

45. The processing chamber of claim 43, wherein the second plate includes a plurality of second openings formed therein, wherein a first number of the plurality of openings is greater than a second number of the plurality of second openings.

46. ​​The processing chamber of claim 45, wherein the plurality of second openings are larger than the plurality of openings.

47. The processing chamber of claim 46, wherein the second plate is disposed above the plate, and the third plate is disposed above the second plate.

48. The processing chamber of claim 45, wherein the processing chamber further comprises: The fourth arc-shaped support member is spaced apart from the third arc-shaped support member; and The third plate is supported by the fourth arc-shaped support member, wherein the third plate has a solid cross-section spanning the outer dimensions of the third plate.

49. The processing chamber of claim 41, wherein the chamber body comprises: The pumping ring includes an arcuate exhaust opening that is in fluid communication with one or more exhaust passages.

50. The processing chamber of claim 49, wherein the arcuate exhaust opening extends circumferentially around the processing volume.

51. The processing chamber of claim 49, wherein the arc-shaped exhaust opening is disposed between the pumping ring and the cover plate.

52. A chamber fitting suitable for semiconductor manufacturing operations, the chamber fitting comprising: First arc-shaped support component; Second arc-shaped support component; A plate, sized and shaped to be positioned on the second arcuate support, the plate including a plurality of openings formed therein; Third arc-shaped support component; and The second plate is sized and shaped to be positioned on the third arc-shaped support.

53. The chamber fitting of claim 52, wherein the plate comprises at least one opaque outer surface.

54. The chamber fitting of claim 53, wherein the plate comprises silicon carbide (SiC).

55. The chamber fitting of claim 52, wherein the plurality of openings comprises a plurality of through holes.

56. The chamber fitting of claim 52, wherein the inner dimension of the second arcuate support is smaller than the inner dimension of the first arcuate support.

57. The chamber fitting of claim 52, wherein the second plate has a solid cross-section spanning the outer dimensions of the second plate.

58. A substrate processing method, the method comprising: The first airflow enters the first flow horizontal plane of the processing chamber and flows above the substrate; A second airflow is allowed to flow over a plate disposed above or below the substrate, the flow comprising allowing the second airflow to flow over the substrate after passing over the plate; and The substrate is heated.

59. The method of claim 58, wherein the first airflow flows over the substrate in a crossflow manner, and the second airflow flows into the substrate in a radial manner and flows over the substrate.

60. The method of claim 58, wherein the second airflow flows through a plurality of openings formed in the plate.

Images