A multiple quantum well active region and method of fabricating the same

Abstract

The application discloses a kind of multi-quantum well active region and preparation method thereof, including periodically grown multi-quantum well active layer;Single cycle of multi-quantum well active layer includes by sequentially stacking from bottom to top multi-quantum well active region well layer, multi-quantum well active region indium isolation layer, multi-quantum well active region cap layer, multi-quantum well active region interface processing layer and multi-quantum well active region barrier layer, to improve the overall light emitting uniformity of multi-quantum well active region, effectively reduce the half-width of light emitting spectrum, and inhibit blue shift phenomenon, obtain higher color purity, better stability light emitting spectrum.

Description

Technical Field

[0001] This invention relates to the field of LED epitaxial structure technology, and in particular to a multi-quantum-well active region and its fabrication method. Background Technology

[0002] Currently, mainstream white LEDs (Light Emitting Diodes) on the market are typically manufactured by exciting yellow YAG phosphors with blue light chips (wavelength in the 450-460nm range). However, the white light emitted by LEDs produced by this packaging method has a discontinuous spectrum, with a spectral gap around 500nm (i.e., the cyan to green light band). This not only affects the light quality of the white light but also makes it difficult to improve its color rendering index. Furthermore, the high proportion of blue light in the spectrum also leads to blue light pollution, which may have adverse effects on human eye health with prolonged use.

[0003] To improve the spectral continuity of white LEDs, enhance the color rendering index, and reduce blue light hazards, an effective technical approach is to utilize cyan LED chips with wavelengths in the 490-500nm range to fill the aforementioned spectral gap, thereby constructing a white light source with a relatively full spectrum. Cyan light has a wavelength of 490-500nm, falling between the mainstream blue (450nm) and green (520nm) LEDs. This leads to several problems, including: a larger full width at half maximum (FWHM) of the emitted light; and a significant wavelength shift under low current, known as the "blue shift."

[0004] In full-color display applications, wavelength shifts will cause changes in the emitted color, resulting in impure colors and affecting the visual effect of the display screen. Changes in peak wavelengths will cause shifts in chromaticity coordinates, causing changes in the color or color temperature of white light. Summary of the Invention

[0005] The technical problem to be solved by this invention is: how to solve the problems of half-width at half maximum (FWHM) and blue shift of the emission wavelength of cyan LED chips.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: a multi-quantum well active region, comprising a periodically grown multi-quantum well active layer; a single period of the multi-quantum well active layer comprises, from bottom to top, a multi-quantum well active region well layer, a multi-quantum well active region indium isolation layer, a multi-quantum well active region cap layer, a multi-quantum well active region interface processing layer, and a multi-quantum well active region barrier layer.

[0007] Furthermore, the thickness of the multi-quantum well active layer is 0.15-0.2 μm, and its number of periods is 8-14.

[0008] Furthermore, the doping concentration of In in the multi-quantum-well active region well layer is 1E+20-2E+20 atom / cm².3 .

[0009] Furthermore, the thickness of the indium isolation layer in the active region of the multi-quantum well is 0.001-0.003 μm; the material of the indium isolation layer in the active region of the multi-quantum well is at least one of AlN / AlGaN / BN / BGaN / BAlN / BAlGaN.

[0010] Furthermore, the cap layer thickness of the multi-quantum well active region is 0.001-0.003 μm; the interface treatment layer of the multi-quantum well active region cooperates with the indium isolation layer of the multi-quantum well active region to form a steep well barrier interface.

[0011] Furthermore, the barrier layer of the multi-quantum well active region is doped with SiH4, and the doping concentration of SiH4 is 1-3E+17 atom / cm³. 3 The thickness of the barrier layer in the active region of the multi-quantum well is 0.002-0.007 μm.

[0012] Furthermore, a method for fabricating a multi-quantum-well active region includes: under the conditions of a reaction chamber temperature of 700-950℃, a reaction chamber pressure of 100-500mbar, and the introduction of a trimethylindium source and a triethylgallium source, a multi-quantum-well active region well layer, a multi-quantum-well active region indium isolation layer, a multi-quantum-well active region cap layer, a multi-quantum-well active region interface treatment layer, and a multi-quantum-well active region barrier layer are stacked sequentially from bottom to top, forming one cycle for the multi-quantum-well active region well layer, the multi-quantum-well active region indium isolation layer, the multi-quantum-well active region cap layer, the multi-quantum-well active region interface treatment layer, and the multi-quantum-well active region barrier layer.

[0013] Furthermore, when growing the indium isolation layer in the active region of the multi-quantum well, the reaction chamber temperature is 750-800℃, the trimethylindium source and the triethylgallium source are turned off, and the trimethylaluminum source and / or the triethylboron source are introduced, with nitrogen and hydrogen as carriers.

[0014] Furthermore, during the growth of the multi-quantum well active region interface treatment layer, the reaction chamber temperature is 820-870°C, the trimethylindium source and the triethylgallium source are turned off, and nitrogen and hydrogen are used as carriers; while growing the multi-quantum well active region interface treatment layer, the multi-quantum well active region cap layer is etched in situ.

[0015] Furthermore, during the growth of the multi-quantum well active region well layer, the reaction chamber temperature is 750-800°C, and a trimethylindium source and a triethylgallium source are introduced, with nitrogen and ammonia as carriers; during the growth of the multi-quantum well active region cap layer, the reaction chamber temperature is 750-800°C, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers; during the growth of the multi-quantum well active region barrier layer, the reaction chamber temperature is 780-900°C, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers.

[0016] The beneficial effects of this invention are as follows: It provides a multi-quantum-well active region and its preparation method. By setting an indium barrier layer in the multi-quantum-well active region, the diffusion of indium elements from the well layer to the barrier layer of the multi-quantum-well active region can be effectively blocked, thus avoiding the precipitation of indium elements. By combining the multi-quantum-well active region interface treatment layer with the indium barrier layer, a steep well barrier interface is formed. At the same time, the wide bandgap of the indium barrier layer in the multi-quantum-well active region is used as a current spreading layer to make the current uniformly distributed and weaken the influence of uneven electric field distribution caused by current congestion. This improves the overall luminescence uniformity of the multi-quantum-well active region, effectively reduces the half-width at half-maximum of the emission spectrum, and suppresses the blue shift phenomenon, resulting in an emission spectrum with higher color purity and better stability. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a multi-quantum-well active region according to the present invention; Figure 2 This is a schematic diagram of the structure of a multi-quantum-well active region in this embodiment; Figure 3 This is a graph showing the relationship between forward current and wavelength for this embodiment and the comparative example. Label Explanation: 1. Well layer of multi-quantum well active region; 2. Indium isolation layer of multi-quantum well active region; 3. Cap layer of multi-quantum well active region; 4. Interface treatment layer of multi-quantum well active region; 5. Barrier layer of multi-quantum well active region. Detailed Implementation

[0018] To explain in detail the technical content, objectives, and effects of the present invention, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0019] Before detailing the embodiments of this application, some related concepts will first be explained: Table 1

[0020] Please refer to Figure 1 Embodiment 1 of the present invention provides a multi-quantum well active region, including a periodically grown multi-quantum well active layer; a single period of the multi-quantum well active layer includes a multi-quantum well active region well layer 1, a multi-quantum well active region indium isolation layer 2, a multi-quantum well active region cap layer 3, a multi-quantum well active region interface treatment layer 4, and a multi-quantum well active region barrier layer 5 stacked sequentially from bottom to top.

[0021] As can be seen from the above description, the beneficial effects of the present invention are as follows: It provides a multi-quantum-well active region and its preparation method. By setting the indium barrier layer 2 in the multi-quantum-well active region, the diffusion of indium element from the well layer 1 to the barrier layer 5 of the multi-quantum-well active region can be effectively blocked, thus avoiding the precipitation of indium element. By cooperating with the interface treatment layer 4 of the multi-quantum-well active region and the indium barrier layer 2 of the multi-quantum-well active region, a steep well barrier interface is formed. At the same time, the wide bandgap of the indium barrier layer 2 of the multi-quantum-well active region is used as a current spreading layer, so that the current is uniformly distributed and the influence of the uneven electric field distribution caused by current congestion is weakened, thereby improving the overall luminescence uniformity of the multi-quantum-well active region, effectively reducing the half-width of the emission spectrum, suppressing the blue shift phenomenon, and obtaining an emission spectrum with higher color purity and better stability.

[0022] Furthermore, the thickness of the multi-quantum well active layer is 0.15-0.2 μm, and its number of periods is 8-14.

[0023] As described above, this structure can improve the luminescence intensity while ensuring the stability of the device. The number of cycles is controlled between 8 and 14 based on in-depth research on luminescence intensity and crystal quality. If the number of cycles is too small (less than 8), the luminescence intensity will be insufficient and the device brightness will be low. If the number of cycles is too large (more than 14), since the quantum well is a low-temperature doped layer, too many cycles will introduce V-pits defects. These defects will affect the crystal quality of the active region of the multi-quantum-well and enhance the polarization effect, thereby leading to a decrease in photoelectric performance.

[0024] Furthermore, the doping concentration of the 1In well layer in the multi-quantum well active region is 1E+20-2E+20 atom / cm². 3 .

[0025] As can be seen from the above description, this doping concentration range avoids carrier leakage due to excessively low doping or crystal quality degradation due to excessively high doping, thus maintaining good crystal integrity while ensuring high luminous efficiency.

[0026] Furthermore, the thickness of the indium isolation layer 2 in the active region of the multi-quantum well is 0.001-0.003 μm; the material of the indium isolation layer 2 in the active region of the multi-quantum well is at least one of AlN / AlGaN / BN / BGaN / BAlN / BAlGaN.

[0027] As can be seen from the above description, the design of this thickness range can effectively prevent indium diffusion without affecting the carrier tunneling and transport process between the wells and barriers; the above materials all have wide bandgap characteristics, which can effectively block the diffusion of indium atoms while acting as a current spreading layer.

[0028] Furthermore, the thickness of the cap layer 3 of the multi-quantum well active region is 0.001-0.003 μm; the interface treatment layer 4 of the multi-quantum well active region cooperates with the indium isolation layer 2 of the multi-quantum well active region to form a steep well barrier interface.

[0029] As described above, while growing the multi-quantum well active region interface treatment layer 4, the multi-quantum well active region cap layer 3 needs to be etched in situ. The thickness of the multi-quantum well active region cap layer 3 provides sufficient material margin for the in-situ etching process. Since the indium isolation layer 2 of the multi-quantum well active region blocks the upward diffusion of indium atoms, the multi-quantum well active region interface treatment layer 4 performs in-situ etching on the surface of the cap layer below. The two work together to form a steep well barrier interface.

[0030] Furthermore, the multi-quantum well active region barrier layer 5 is doped with SiH4, and the SiH4 doping concentration is 3E+17 atom / cm³. 3 The thickness of the multi-quantum well active region barrier layer 5 is 0.002-0.007 μm.

[0031] As described above, this doping concentration can effectively adjust the conductivity of the barrier layer and balance the distribution of charge carriers in the multi-period structure; this thickness can shorten the distance that charge carriers travel through the barrier layer while ensuring sufficient barrier height, thereby reducing the series resistance.

[0032] Please refer to Figure 1 Embodiment 1 of the present invention provides a method for preparing a multi-quantum well active region. The preparation method includes: under the conditions of reaction chamber temperature of 700-950℃, reaction chamber pressure of 100-500mbar, and introduction of trimethylindium source and triethylgallium source, a multi-quantum well active region well layer 1, a multi-quantum well active region indium isolation layer 2, a multi-quantum well active region cap layer 3, a multi-quantum well active region interface treatment layer 4, and a multi-quantum well active region barrier layer 5 are stacked sequentially from bottom to top, forming one cycle for the multi-quantum well active region well layer 1, the multi-quantum well active region indium isolation layer 2, the multi-quantum well active region cap layer 3, the multi-quantum well active region interface treatment layer 4, and the multi-quantum well active region barrier layer 5.

[0033] As can be seen from the above description, the beneficial effects of the present invention are as follows: a method for preparing a multi-quantum-well active region is provided. Under reaction conditions of 700-950℃ and 100-500mbar, by controlling the on / off state of the trimethylindium source and the triethylgallium source, the multi-quantum-well active region layer can be periodically grown in a cycle consisting of a multi-quantum-well active region well layer 1, a multi-quantum-well active region indium barrier layer 2, a multi-quantum-well active region cap layer 3, a multi-quantum-well active region interface treatment layer 4, and a multi-quantum-well active region barrier layer 5 stacked sequentially from bottom to top.

[0034] Furthermore, when growing the indium isolation layer 2 of the multi-quantum well active region, the reaction chamber temperature is 750-800℃, the trimethylindium source and the triethylgallium source are turned off, and the trimethylaluminum source and / or the triethylboron source are introduced, with nitrogen and hydrogen as carriers.

[0035] As described above, under these conditions, it is beneficial to form dense AlN, BN, or BAlN-based thin films, which effectively suppresses the diffusion of indium atoms.

[0036] Furthermore, during the growth of the multi-quantum well active region interface treatment layer 4, the reaction chamber temperature is 820-870℃, the trimethylindium source and the triethylgallium source are turned off, and nitrogen and hydrogen are used as carriers; while growing the multi-quantum well active region interface treatment layer 4, the multi-quantum well active region cap layer 3 is etched in situ.

[0037] As described above, under these conditions, in-situ etching can be performed on the underlying cap layer, achieving atomic-level surface planarization. In-situ etching eliminates the need to remove the sample, avoiding secondary contamination and ensuring that the next cycle of barrier layer growth occurs on a high-quality surface, thereby forming a steep trap-barrier interface.

[0038] Furthermore, during the growth of the multi-quantum well active region well layer 1, the reaction chamber temperature is 750-800°C, and a trimethylindium source and a triethylgallium source are introduced, with nitrogen and ammonia as carriers; during the growth of the multi-quantum well active region cap layer 3, the reaction chamber temperature is 750-800°C, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers; during the growth of the multi-quantum well active region barrier layer 5, the reaction chamber temperature is 780-900°C, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers.

[0039] As described above, by combining the multi-quantum-well active region interface treatment layer 4 with the multi-quantum-well active region indium barrier layer 2, a steep well barrier interface is formed. At the same time, the wide bandgap of the multi-quantum-well active region indium barrier layer 2 is used as a current spreading layer to make the current uniformly distributed and weaken the influence of the uneven electric field distribution caused by current congestion. This improves the overall luminescence uniformity of the multi-quantum-well active region, effectively reduces the half-width at half maximum of the emission spectrum, and suppresses the blue shift phenomenon, resulting in an emission spectrum with higher color purity and better stability.

[0040] Specifically, this embodiment includes the following steps: S1. Using magnetron sputtering, the substrate (sapphire + SiO2 composite PSS substrate) is placed into the magnetron sputtering reaction chamber, and an AlN thin film layer with a thickness of 0.02μm is grown on its front side at a temperature of 550℃. S2. Using metal-organic chemical vapor deposition (MOCVD), a substrate coated with an AlN thin film is placed into the reaction chamber of a metal-organic chemical vapor deposition equipment. Under the conditions of a reaction chamber pressure of 135 mbar, a temperature of 890 °C, hydrogen and ammonia as carriers, and a trimethylgallium (TMGa) source of 80 sccm, a buffer layer with a thickness of 0.02 μm is grown on the substrate. S3. Under the conditions of a temperature of 1060℃, a reaction chamber pressure of 200mbar, and a trimethylgallium (TMGa) source of 860sccm, a U-shaped GaN layer with a thickness of 3μm is grown. S4. Under the conditions of a temperature of 1100℃, a reaction chamber pressure of 200mbar, and a trimethylgallium (TMGa) source of 1500sccm, an N-type semiconductor layer with a thickness of 1.5μm is grown using SiH4 as dopant. S5. Under conditions of 700-900℃, 100-500mbar pressure in the reaction chamber, and the introduction of triethylgallium (TEGa) source, trimethylindium (TMIn) source and ammonia gas, an InGaN / GaN superlattice stress relief layer is periodically grown on the N-type semiconductor layer in a cycle of sequentially growing an InGaN layer and a GaN layer, with a thickness of 0.15-0.3μm and a cycle number of 3-6. S51. An InGaN layer is grown at a temperature of 780℃, a reaction chamber pressure of 260 mbar, and under the conditions of a trimethylindium (TMIn) source at 1200 sccm and a triethylgallium (TEGa) source at 1000 sccm. S52. Under the conditions of a temperature of 800℃, a reaction chamber pressure of 260mbar, and a triethylgallium (TEGa) source of 1000sccm, a GaN layer is grown. S53, the stress relief layer has 3 cycles and a thickness of 0.2μm; S6. Under the conditions of a temperature of 700-950℃, a reaction chamber pressure of 100-500mbar, and the introduction of a trimethylindium (TMIn) source of 1200-1500sccm and a triethylgallium (TEGa) source of 100-1000sccm, a multi-quantum well active region layer is periodically grown on the stress relief layer, with the following layers stacked sequentially from bottom to top: multi-quantum well active region well layer 1, multi-quantum well active region indium isolation layer 2, multi-quantum well active region cap layer 3, multi-quantum well active region interface treatment layer 4, and multi-quantum well active region barrier layer 5, forming one cycle, for a total of 12 cycles. S61. Under conditions of 760℃, 260mbar reaction chamber pressure, and a 1500sccm trimethylindium (TMIn) source and a 200sccm triethylgallium (TEGa) source, with nitrogen and ammonia as support gases, a multi-quantum-well active region well layer 1 is grown, with an In doping concentration of 2E+20 atom / cm. 3 The thickness is 0.003 μm; S62. At a temperature of 760°C, with the trimethylindium (TMIn) source and the triethylgallium (TEGa) source turned off, and a trimethylaluminum (TMAl) source of 200 sccm introduced, and with nitrogen and hydrogen as carriers, an indium isolation layer 2 with a thickness of 0.002 μm is grown in the active region of AlN multiple quantum wells. S63. Under the conditions of temperature drop to 760℃, reaction chamber pressure of 260mbar, introduction of 250sccm of triethylgallium (TEGa) source, and nitrogen and ammonia as carriers, a multi-quantum well active region cap layer 3 with a thickness of 0.003μm is grown. S64. At a temperature of 840°C, with the trimethylindium (TMIn) source and the triethylgallium (TEGa) source turned off, and with nitrogen and hydrogen as carriers, the interface treatment layer 4 of the multi-quantum well active region is grown, and the cap layer 3 of the multi-quantum well active region is etched in situ for 30 seconds. S65. A multi-quantum well active region barrier layer 5 was grown at 850°C with a triethylgallium (TEGa) source at 1100 sccm, using nitrogen and ammonia as support gases. The layer was doped with SiH4, achieving a density of 3E+17 atom / cm². 3 Thickness 0.002μm; S7. In a reaction chamber at a temperature of 900℃ and a pressure of 130mbar, ammonia gas (NH3) at 55000 sccm, a trimethylgallium (TMGa) source at 40 sccm, and a TMAL source at 30 sccm are introduced to grow an AlGaN electron blocking layer with a thickness of 0.02μm. S8. In a reaction chamber at a temperature of 950℃ and a pressure of 260mbar, ammonia gas (NH3) at 55000 sccm and a trimethylgallium (TMGa) source at 50 sccm are introduced. The magnesium pyrocene (Mg) source is Cp2Mg and the Mg doping concentration is 1.5E+20 atom / cm3 to grow a P-type semiconductor layer.

[0041] Please refer to Figure 1Embodiment 2 of the present invention provides a multi-quantum-well active region. The difference from Embodiment 1 is that when growing the indium isolation layer 2 of the multi-quantum-well active region, the temperature is set to 760°C, TMI and TEGa are turned off, and a trimethylaluminum (TMAl) source of 200 sccm and a triethylboron (TEB) source of 100 sccm are introduced. Nitrogen and hydrogen are used as carriers to grow the BAlN multi-quantum-well active region indium isolation layer 2 with a thickness of 0.003 μm. Other steps are the same as in Embodiment 1.

[0042] Please refer to Figure 2 The present invention provides a multi-quantum well active region in comparison, which differs from Example 1 in that it only includes a multi-quantum well active region well layer 1, a multi-quantum well active region cap layer 3, a multi-quantum well active region interface treatment layer 4, and a multi-quantum well active region barrier layer 5, without the multi-quantum well active region indium isolation layer 2. The other steps are the same as in Example 1.

[0043] Table 2

[0044] Please refer to Table 2. Epitaxial wafers prepared using Examples 1 and 2, as well as the comparative example, were processed to achieve a thickness of 35 mm. A 22mil chip was tested for a 120mA current.

[0045] The epitaxial wafer prepared by the method of Example 2 has the highest luminous brightness, the lowest half-width, and the smallest blue shift. The epitaxial wafer prepared by the method of Example 1 is in the middle. The epitaxial wafer prepared by the comparative method has the lowest luminous brightness, the lowest half-width, and the largest blue shift. This shows that the preparation methods in Examples 1 and 2 can significantly improve luminous uniformity and reduce luminous half-width and blue shift.

[0046] Please refer to Figure 3 The epitaxial wafers prepared using Examples 1 and 2, as well as the comparative example, were used to prepare 35... For a 22mil chip, a current test of 0-2500mA was conducted. The epitaxial wafer prepared using the method of Example 2 showed the smallest change in emission wavelength and the most stable performance. The epitaxial wafer prepared using the method of Example 1 was in the middle. The epitaxial wafer prepared using the comparative method showed a larger change in emission wavelength. This indicates that the preparation methods in Examples 1 and 2 can significantly improve the uniformity of emission and the stability of emission wavelength.

[0047] In summary, the epitaxial structure of the blue LED chip and its fabrication method of the present invention have the following beneficial effects: 1. By setting the indium isolation layer 2 in the multi-quantum well active region, the diffusion of indium element from the well layer 1 in the multi-quantum well active region to the barrier layer 5 in the multi-quantum well active region can be effectively blocked, thus avoiding the precipitation of indium element. 2. By combining the multi-quantum well active region interface treatment layer 4 with the multi-quantum well active region indium isolation layer 2, a steep well barrier interface is formed. At the same time, the wide bandgap of the multi-quantum well active region indium isolation layer 2 is utilized to make the current uniformly distributed, thereby weakening the influence of uneven electric field distribution caused by current crowding, improving the overall luminescence uniformity of the multi-quantum well active region, effectively reducing the half-width of the emission spectrum, and suppressing the blue shift phenomenon, resulting in an emission spectrum with higher color purity and better stability.

[0048] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification and drawings, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A multi-quantum-well active region, characterized in that, It includes a periodically grown multi-quantum well active layer; a single period of the multi-quantum well active layer includes, from bottom to top, a multi-quantum well active region well layer, a multi-quantum well active region indium isolation layer, a multi-quantum well active region cap layer, a multi-quantum well active region interface processing layer, and a multi-quantum well active region barrier layer.

2. The multi-quantum-well active region according to claim 1, characterized in that, The thickness of the multi-quantum well active layer is 0.15-0.2 μm, and the number of its periods is 8-14.

3. The multi-quantum-well active region according to claim 1, characterized in that, The In doping concentration of the In well layer in the multi-quantum well active region is 1E+20-2E+20 atom / cm². 3 .

4. The multi-quantum-well active region according to claim 1, characterized in that, The thickness of the indium isolation layer in the active region of the multi-quantum well is 0.001-0.003 μm; the material of the indium isolation layer in the active region of the multi-quantum well is at least one of AlN / AlGaN / BN / BGaN / BAlN / BAlGaN.

5. The multi-quantum-well active region according to claim 1, characterized in that, The cap layer thickness of the multi-quantum well active region is 0.001-0.003 μm; the interface treatment layer of the multi-quantum well active region cooperates with the indium isolation layer of the multi-quantum well active region to form a steep well barrier interface.

6. The multi-quantum-well active region according to claim 1, characterized in that, The barrier layer of the multi-quantum well active region is doped with SiH4, and the doping concentration of SiH4 is 1-3E+17 atom / cm. 3 The thickness of the barrier layer in the active region of the multi-quantum well is 0.002-0.007 μm.

7. A method for fabricating a multi-quantum-well active region as described in any one of claims 1-6, characterized in that, The preparation method includes: under the conditions of a reaction chamber temperature of 700-950℃, a reaction chamber pressure of 100-500mbar, and the introduction of a trimethylindium source and a triethylgallium source, a multi-quantum well active region layer is periodically grown, with the multi-quantum well active region indium isolation layer, multi-quantum well active region cap layer, multi-quantum well active region interface treatment layer and multi-quantum well active region barrier layer stacked sequentially from bottom to top as one cycle.

8. The method for fabricating a multi-quantum-well active region according to claim 7, characterized in that, When growing the indium isolation layer of the active region of the multi-quantum well, the reaction chamber temperature is 750-800℃, the trimethylindium source and the triethylgallium source are turned off, and the trimethylaluminum source and / or the triethylboron source are introduced, with nitrogen and hydrogen as carriers.

9. The method for fabricating a multi-quantum-well active region according to claim 7, characterized in that, During the growth of the multi-quantum well active region interface treatment layer, the reaction chamber temperature is 820-870℃, the trimethylindium source and the triethylgallium source are turned off, and nitrogen and hydrogen are used as carriers; while growing the multi-quantum well active region interface treatment layer, the multi-quantum well active region cap layer is etched in situ.

10. The method for fabricating a multi-quantum-well active region according to claim 7, characterized in that, When growing the active region well layer of the multi-quantum well, the reaction chamber temperature is 750-800℃, and a trimethylindium source and a triethylgallium source are introduced, with nitrogen and ammonia as carriers; when growing the cap layer of the active region of the multi-quantum well, the reaction chamber temperature is 750-800℃, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers; when growing the barrier layer of the active region of the multi-quantum well, the reaction chamber temperature is 780-900℃, and a triethylgallium source is introduced, with nitrogen and ammonia as carriers.

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