An optical structure, a light emitting device and a preparation method thereof, and a display device

Abstract

The application belongs to the technical field of display, and relates to an optical structure, a light-emitting device and a preparation method thereof, and a display device. The optical structure comprises a substrate and a pixel definition layer, wherein the pixel definition layer is arranged on the substrate; the pixel definition layer is provided with a first groove, a second groove and a connecting channel, and the first groove is communicated with the second groove through the connecting channel. By arranging the first groove, the second groove and the connecting channel on the pixel definition layer, the defect state of a carrier function layer in the first groove can be improved, and the light-emitting efficiency and service life of the light-emitting device are improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to an optical structure, a light-emitting device, a method for fabricating the same, and a display device. Background Technology

[0002] Colloidal quantum dots have attracted widespread attention due to their unique properties, such as high quantum efficiency, high color purity, low-cost solution processability, and easily tunable emission wavelength. They are considered a potential alternative light-emitting material for next-generation lighting and display applications using light-emitting diodes (LEDs). For light-emitting devices using colloidal quantum dots to fabricate the quantum dot emitting layer, an electron transport layer is typically included. In existing technologies, defects in the electron transport layer material quench the excitons in the quantum dot emitting layer, affecting the luminous efficiency and lifespan of the light-emitting device. Summary of the Invention

[0003] To address the aforementioned technical problems, this application provides an optical structure that employs the following technical solution:

[0004] An optical structure comprising:

[0005] substrate;

[0006] A pixel defining layer is disposed on the substrate;

[0007] The pixel defining layer is provided with a first groove, a second groove and a connecting channel, and the first groove is connected to the second groove through the connecting channel.

[0008] To address the aforementioned technical problems, this application provides a light-emitting device, which employs the following technical solution:

[0009] A light-emitting device, comprising:

[0010] An optical structure, wherein the optical structure is the optical structure described above;

[0011] A light-emitting layer is disposed in the first groove;

[0012] A first charge carrier functional layer is disposed on the light-emitting layer, and the first charge carrier functional layer and the connection channel are adjacent to each other in the first groove.

[0013] An adsorption layer is disposed in the second groove, and the adsorption layer is adjacent to the connecting channel in the second groove.

[0014] To address the aforementioned technical problems, this application also provides a method for fabricating a light-emitting device, which employs the following technical solution:

[0015] A method for fabricating a light-emitting device includes the following fabrication steps:

[0016] Provide substrate;

[0017] A first electrode is disposed on the substrate;

[0018] A pixel defining layer is provided on the first electrode, wherein the pixel defining layer is provided with a first groove, a second groove and a connecting channel, and the first groove is connected to the second groove through the connecting channel;

[0019] A light-emitting layer and a first charge carrier functional layer are sequentially formed within the first groove;

[0020] An adsorption layer is formed in the second groove to obtain a prefabricated device;

[0021] The prefabricated device is exposed to air for a preset time;

[0022] A second electrode is disposed on the exposed prefabricated device to obtain the light-emitting device.

[0023] To address the aforementioned technical problems, this application also provides a display device, which employs the following technical solution:

[0024] A display device includes the optical structure described above, or includes the light-emitting device described above, or is a light-emitting device prepared using the method described above.

[0025] Compared with the prior art, the embodiments of this application have the following main advantages:

[0026] This application improves the luminous efficiency and lifespan of the light-emitting device by setting a first groove, a second groove, and a connection channel on the pixel defining layer. When the first groove is provided with a carrier functional layer, the defect states of the carrier functional layer can be improved. Attached Figure Description

[0027] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0028] Figure 1 A top view of the optical structure provided in an embodiment of the present invention;

[0029] Figure 2 As shown in one embodiment of the present invention, along Figure 1A sectional view of the line of sight shown in section AA;

[0030] Figure 3 In another embodiment of the present invention, along Figure 1 A sectional view of the line of sight shown in section AA;

[0031] Figure 4 This application is based on Figure 2 A structural diagram of the light-emitting device formed by the optical structure shown.

[0032] Figure 5 This application is based on Figure 3 A structural diagram of another light-emitting device formed by the optical structure shown;

[0033] Figure 6 This is a flowchart illustrating the fabrication method of the light-emitting device according to the embodiments of the application.

[0034] Figure label:

[0035] 1. Substrate; 11. Substrate; 12. TFT layer; 2. Pixel defining layer; 21. First groove; 22. Second groove; 23. Connecting channel; 3. Anode; 4. Hole injection layer; 5. Hole transport layer; 6. Light emitting layer; 7. Electron transport layer; 8. Adsorption layer; 9. Cathode. Detailed Implementation

[0036] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0037] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0038] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0039] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0040] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0041] In existing light-emitting devices, defects on the surface of the electron transport layer have a quenching effect on quantum dot excitons, affecting the luminous efficiency and lifespan of the light-emitting devices.

[0042] Please refer to Figure 1 and Figure 2 To address the aforementioned problems, this application provides an optical structure comprising a substrate 1 and a pixel defining layer 2. The pixel defining layer 2 is disposed on the substrate 1 and has a first groove 21, a second groove 22, and a connecting channel 23. The first groove 21 communicates with the second groove 22 through the connecting channel 23. The number of the first groove 21, the second groove 22, and the connecting channel 23 is at least one. The first groove 21 is used to accommodate at least one carrier functional layer, such as an electron transport layer. The second groove 22 is used to accommodate a passivating agent. The connecting channel 23 is used to introduce the passivating agent in the second groove 22 into the carrier functional layer of the first groove 21.

[0043] In this embodiment, when the light-emitting device adopts this optical structure, a first groove 21, a second groove 22 and a connecting channel 23 are provided on the pixel defining layer 2. The connecting channel 23 is used to introduce the passivating agent in the second groove 22 into the first groove 21. The passivating agent can improve the defect state of the carrier functional layer in the first groove 21, thereby improving the luminous efficiency and lifespan of the light-emitting device.

[0044] In this embodiment, the specific location of the connection channel 23 is not limited. The connection channel 23 can be disposed on the top or bottom surface of the pixel boundary layer 2, or it can be disposed in the pixel boundary layer 2. In the following embodiments, the connection channel 23 is disposed in the pixel boundary layer 2 as an example.

[0045] In some embodiments, the connection channel 23 is located between the first groove 21 and the second groove 22. The two ends of the connection channel 23 are respectively provided with a channel inlet and a channel outlet. The channel inlet communicates with the second groove 22, the channel outlet communicates with the first groove 21, and the channel outlet is disposed adjacent to the charge carrier functional layer in the first groove 21.

[0046] In this embodiment, the passivating agent in the second groove 22 can enter the connecting channel 23 through the channel inlet, then move along the connecting channel 23 to the channel outlet, and then enter the first groove 21 from the channel outlet. The channel outlet is arranged adjacent to the carrier functional layer in the first groove 21, so that the passivating agent can enter the carrier functional layer accurately and achieve the passivation effect on the carrier functional layer.

[0047] In some embodiments, such as Figure 2 As shown, the channel outlet is located in the middle of the groove wall of the first groove 21. In the direction perpendicular to the surface of the substrate 1, the average distance between the side of the channel outlet near the substrate 1 and the bottom of the first groove 21 is 0.1–0.5 μm, optionally 0.2–0.4 μm. In this embodiment, Figure 2 The structure shown is suitable for the fabrication of upright light-emitting devices. On the one hand, depending on the position of the charge carrier functional layer in the first groove 21, the distance between the channel outlet and the bottom of the first groove 21 is also different, which is not limited here. On the other hand, the bottom of the first groove 21 is not a perfectly regular plane and there is an uneven bottom. Therefore, ensuring that the average distance between the channel outlet and the bottom of the first groove 21 meets the aforementioned range can guarantee that the channel outlet and the charge carrier functional layer in the first groove 21 are adjacent in position.

[0048] In some optional embodiments of this example, the distance between the channel outlet and the bottom of the first groove 21 is within the range of any one or any two of 0.1μm, 0.2μm, 0.3μm, 0.4μm, 0.5μm, etc.

[0049] In some embodiments, such as Figure 3 As shown, different Figure 2The structure shown has the channel inlet located at the bottom of the groove wall of the second groove 22, and in a direction parallel to the surface of the substrate 1, the side of the channel inlet closest to the substrate 1 is flush with the bottom of the second groove 22. In this embodiment, Figure 3 The structure shown is suitable for the fabrication of upright light-emitting devices. The second groove 22 is used to place adsorbent material to adsorb passivating agents including water and / or hydroxyl-containing agents. These passivating agents accumulate at the bottom of the second groove 22 under the action of gravity. The channel inlet is located at the bottom of the second groove 22 so that the collected passivating agents can quickly enter the connection channel 23 and fully act on the carrier functional layer.

[0050] In other embodiments, for inverted light-emitting devices, the channel entrance can also be located on the bottom of the second groove 22, which has the same effect as the channel entrance being located at the bottom of the groove wall of the second groove 22.

[0051] In some embodiments, the shape of the connection channel 23 is one or more of a straight line, an arc, a U-shape, or an S-shape. Different shapes can provide different passivation rates to meet the passivation effects of different passivating agents for different charge carrier functional layer materials.

[0052] In some embodiments, the average length of the connecting channel 23 is 5–100 μm, optionally 5–95 μm. In this embodiment, the length of the connecting channel 23 varies depending on the distance between the first groove 21 and the second groove 22, or the shape of the connecting channel 23; this application does not impose a limitation on this. In this embodiment, since the connecting channel 23 is within the pixel boundary layer, the length of the connecting channel 23 needs to be adapted to the size of the pixel boundary layer. Using the aforementioned length range ensures that the size of the pixel boundary layer is appropriate, avoiding printing color mixing or decreased display resolution during the fabrication of the light-emitting device, thereby improving the display effect.

[0053] In some optional embodiments of this example, the length of the connection channel 23 is any one or any two of the following: 5μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm.

[0054] In some embodiments, the average cross-sectional area of ​​the connection channel 23 is 1–400 μm. 2 The size can be selected from 1 to 100 μm. 2In this embodiment, since the channel outlet is located on the wall of the first groove 21, the maximum cross-sectional area of ​​the connecting channel 23 is the maximum area of ​​the wall of the first groove 21. When the size of the first groove 21 meets the requirements for printing accuracy and display resolution, the aforementioned range of the average cross-sectional area of ​​the connecting channel 23 facilitates the diffusion of the passivating agent from the second groove 22 to the first groove 21. Furthermore, depending on the required flow rate of the passivating agent, the average cross-sectional area of ​​the connecting channel 23 can be adaptively selected from the aforementioned range in practical applications. Changing the cross-sectional area of ​​the connecting channel 23 can change the flow rate of the passivating agent within the connecting channel 23, and this application does not impose any limitations on this.

[0055] In some optional embodiments of this example, the cross-sectional area of ​​the connection channel 23 is 1 μm. 2 10μm 2 20μm 2 30μm 2 40μm 2 50μm 2 60μm 2 70μm 2 80μm 2 90μm 2 100μm 2 200μm 2 300μm 2 400μm 2 The range between any one or any two of them.

[0056] In some embodiments, the first groove 21 and / or the second groove 22 are shaped as one or more of the following: funnel-shaped, cylindrical, elliptical cylindrical, cuboid, cube, prism, and pyramidal.

[0057] In some embodiments, the first groove 21 is funnel-shaped, and a first opening is provided at one end of the first groove 21 away from the substrate 1. The width of the first groove 21 gradually decreases from the first opening toward the substrate 1, and the width of the first opening is 10 to 100 μm, optionally 10 to 95 μm.

[0058] In some optional embodiments of this example, the width of the first opening is within the range of any one or any two of the following: 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm.

[0059] In some embodiments, the second groove 22 is funnel-shaped, with a second opening at one end away from the substrate 1. The width of the second groove 22 gradually decreases from the second opening towards the substrate 1, and the width of the second opening is 10–100 μm, optionally 10–95 μm. In this embodiment, by setting the second groove 22 to be wider at the top and narrower at the bottom, when the second groove 22 is filled with absorbent material, the contact area between the upper part of the absorbent material and the air can be increased, thereby increasing the adsorption rate of water vapor.

[0060] In some optional embodiments of this example, the width of the second opening is within the range of any one or any two of 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc.

[0061] In some embodiments, the distance between the center of the first groove 21 and the center of the second groove 22 is 10 to 100 μm, and optionally 10 to 95 μm.

[0062] In some optional embodiments of this example, the distance between the center of the first groove 21 and the center of the second groove 22 is any one or any two of the following: 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm.

[0063] In some embodiments, the depth of the first groove 21 is 1 to 2 μm, and optionally 1.1 to 1.9 μm.

[0064] In some optional embodiments of this example, the depth of the first groove 21 is within the range of any one or any two of 1.0μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm, 2.0μm, etc.

[0065] In some embodiments, the depth of the second groove 22 is 1 to 2 μm, and optionally 1.1 to 1.9 μm.

[0066] In some optional embodiments of this example, the depth of the second groove 22 is within the range of any one or any two of 1.0μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm, 2.0μm, etc.

[0067] Regarding the following structural data mentioned in the above embodiments:

[0068] (1) The average distance between the side of the channel outlet near the substrate 1 and the bottom of the first groove 21;

[0069] (2) The average length of the connecting channel 23;

[0070] (3) The average cross-sectional area of ​​the connecting channel 23;

[0071] (4) The widths of the first opening and the second opening;

[0072] (5) The depths of the first groove 21 and the second groove 22;

[0073] (6) The distance between the center of the first groove 21 and the center of the second groove 22.

[0074] In actual measurement, (1), (2), (4), (5), and (6) can be obtained by following along... Figure 1 The substrate is cut along line AA as shown, and the relevant structural data are obtained by measuring the cross-section of the substrate using a scanning electron microscope; for (3), it can be obtained by following... Figure 1 The BB line shown cuts the substrate, and the relevant structural data are obtained by measuring the cross-section of the substrate using a scanning electron microscope.

[0075] In some embodiments, the thickness of the pixel defining layer 2 is 1 to 2 μm, and optionally 1.1 to 1.9 μm.

[0076] In some optional embodiments of this example, the thickness of the pixel defining layer 2 is within the range of any one or any two of 1.0μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm, 2.0μm, etc.

[0077] In some embodiments, the pixel defining layer 2 is made of a hydrophobic material. In some optional embodiments of this example, the hydrophobic material includes one or more of the following: polyamide, polyimide, polysiloxane, polymethyl methacrylate, polybutyl methacrylate, polycyclohexyl methacrylate, polystyrene, polyisoprene, polyhexafluoropropylene, fluorinated poly(p-xylene), fluorinated polysiloxane, fluorinated polyimide, and fluorinated polyamide.

[0078] In some embodiments, the substrate 1 includes a substrate 11 and a TFT layer 12 disposed on the substrate 11, wherein the material of the substrate 11 includes one or more of glass, quartz, polyimide, polyethylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, metal, and alloy; the material of the TFT layer includes metal oxide or polycrystalline silicon, and the metal oxide includes one of indium gallium zinc oxide, indium zinc oxide, indium gallium oxide, and gallium zinc oxide.

[0079] This application also provides a light-emitting device, such as... Figure 3 As shown, the light-emitting device includes Figure 1The optical structure shown includes multiple functional layers disposed within it. The specific structure of the optical structure can be referenced from the optical structure described in the above embodiments. Each functional layer includes at least a light-emitting layer 6, a first carrier functional layer, and an adsorption layer 8. The light-emitting layer 6 is disposed in the first groove 21, and the first carrier functional layer is disposed on the light-emitting layer 6, with the first carrier functional layer and the connecting channel 23 adjacent to each other in the first groove 21. The adsorption layer 8 is disposed in the second groove 22 and is used to adsorb a passivating agent. The passivating agent in the adsorption layer 8 can be introduced into the first carrier functional layer through the connecting channel 23. Specifically, refer to... Figure 3 The first carrier functional layer includes at least an electron transport layer 7. The first carrier functional layer is disposed on the light-emitting layer 6, and the electron transport layer 7 and the connection channel 23 are adjacent to each other in the first groove 21. The adsorption layer 8 and the connection channel 23 are adjacent to each other in the second groove 22. The passivating agent adsorbed by the adsorption layer 8 is introduced into the electron transport layer 7 through the connection channel 23.

[0080] In this embodiment, the passivating agent adsorbed by the adsorption layer 8 is introduced into the first carrier functional layer (such as the electron transport layer 7) through the connection channel 23, which can improve the defect state of the first carrier functional layer, thereby improving the luminous efficiency and lifespan of the light-emitting device.

[0081] In some embodiments, the material of the first carrier functional layer includes a metal oxide, and the adsorption layer is used to adsorb a passivating agent, which includes water and / or a hydroxyl-containing substance. In this embodiment, metal oxides generally have oxygen vacancy defects, which can trap excitons in the light-emitting layer 6, leading to exciton quenching and reducing device performance. The passivating agent includes water and / or a hydroxyl-containing substance, where oxygen atoms in the hydroxyl group can electrostatically interact with metal atoms on the surface of the metal oxide. Through this electrostatic interaction, the oxygen atoms in the hydroxyl group can fill the oxygen vacancies in the metal oxide, thereby passivating these surface defects, reducing exciton quenching, and thus improving the luminous efficiency and lifespan of the light-emitting device.

[0082] In some embodiments, the metal oxide includes one or more of the following: zinc oxide, magnesium oxide, calcium oxide, indium oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, zinc magnesium oxide, zinc calcium oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, lithium titanium oxide, and zinc aluminum oxide, whether in a doped or undoped state. The doped elements in the doped metal oxide include one or more of yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and halogens. These materials exhibit good electrical conductivity when used to fabricate functional layers in light-emitting devices.

[0083] In some embodiments, the hydroxyl-containing substance is selected from alcohol compounds; wherein the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, pentanol, butanediol, ethylene glycol, propylene glycol, dipropylene glycol, isohexyl glycol, 2-methyl-2,4-pentanediol, glycerol, polyethylene glycol, and polyvinyl alcohol. These substances have hydroxyl groups, which can passivate oxygen vacancy defects on the surface of metal oxides.

[0084] In some embodiments, the passivating agent is water, and correspondingly, the material of the pixel defining layer 2 includes a hydrophobic material. In this embodiment, since the pixel defining layer 2 contains a hydrophobic material, and the first groove 21 is formed by the recess of the pixel defining layer 2, the groove wall of the first groove 21 also contains a hydrophobic material, directly exposing the first charge carrier functional layer in the first groove 21 to the air. The hydrophobic material has a certain repulsive effect on water molecules in the air, and the adsorption efficiency of the first charge carrier functional layer for water molecules is low, affecting the passivation effect of water molecules on the first charge carrier functional layer. In this embodiment, on the one hand, the material of the adsorption layer 8 has a strong adsorption effect on water molecules in the air. The material of the adsorption layer 8 can adsorb more water molecules in the air and release the adsorbed water molecules under certain conditions. The water molecules then move to the first charge carrier functional layer through the connecting channel 23, which can effectively improve the passivation effect of water molecules on the metal oxide in the first charge carrier functional layer. On the other hand, the adsorption layer 8 is disposed in the second groove 22, which is spaced apart from the first groove 21. The adsorption layer 8 will not be introduced into the interior of the first groove 21, which can prevent the material of the adsorption layer 8 from having a negative impact on the functional layer in the first groove 21.

[0085] In some embodiments, the thickness of the adsorption layer 8 is 1–2 μm, optionally 1.1–1.9 μm, to ensure adsorption effect. In this embodiment, the thickness of the adsorption layer 8 varies depending on the required amount of passivating agent. Adjusting the thickness of the adsorption layer 8 can adjust the amount of passivating agent adsorbed by the adsorption layer 8, which is not limited herein.

[0086] In some optional embodiments of this example, the thickness of the adsorption layer 8 is within the range of any one or any two of 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, 2.0 μm, etc.

[0087] In some embodiments, the material of the adsorption layer 8 includes one or more of the following: polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyurethane, polyamide, cellulose ether and its derivatives, chitosan and its derivatives, alginate and its derivatives, hyaluronic acid and its derivatives, pentosan and its derivatives, dextran and its derivatives, phosphorus pentoxide, potassium carbonate, sodium sulfate, calcium sulfate, magnesium sulfate, calcium chloride, magnesium chloride, hyaluronic acid, and molecular sieve.

[0088] In some embodiments, the mass ratio of the metal oxide to the material of the adsorption layer 8 is (1-10000):1. By appropriately setting the mass ratio of the metal oxide to the material of the adsorption layer 8, the adsorption effect of the adsorption layer 8 on water molecules can be ensured, thereby ensuring the passivation effect of water molecules on the metal oxide.

[0089] In some optional embodiments of this example, the mass ratio of the metal oxide to the material of the adsorption layer 8 is any one or any two of the following: 1:1, 50:1, 100:1, 500:1, 1000:1, 3000:1, 5000:1, 7000:1, 9000:1, 10000:1.

[0090] In some embodiments, the thickness of the first carrier functional layer is 10–100 nm, and optionally 10–95 μm.

[0091] In some optional embodiments of this example, the thickness of the first carrier functional layer is within the range of any one or any two of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0092] In some embodiments, the light-emitting device further includes a first electrode, a second carrier functional layer, and a second electrode. The first electrode is disposed on the substrate 1, and its position corresponds to and is exposed in the first groove 21. The second carrier functional layer, the light-emitting layer 6, the first carrier functional layer, and the second electrode are sequentially stacked on the first electrode. In this embodiment, the first electrode constitutes a part of the bottom of the first groove 21.

[0093] In some embodiments, reference Figure 4The first electrode is an anode 3, the second electrode is a cathode 9, the first carrier functional layer includes an electron transport layer 6, and the second carrier functional layer includes a hole transport layer 5 and a hole injection layer 4; wherein the electron injection layer is adjacent to the cathode, the electron transport layer and the hole transport layer are adjacent to the light-emitting layer, and the hole injection layer is adjacent to the anode. In other embodiments, the first carrier functional layer may further include the electron injection layer (not shown), which is located between the cathode 9 and the electron transport layer 7. In other embodiments, the second carrier functional layer may include only the hole transport layer 3, or only the hole injection layer 4.

[0094] In another embodiment, reference Figure 5 Unlike Figure 4 The upright light-emitting device shown is... Figure 5 The light-emitting device shown is an inverted light-emitting device, which is based on Figure 3 The optical structure shown is fabricated such that, correspondingly, the first electrode is a cathode 9, the second electrode is an anode 3, the first carrier functional layer includes a hole transport layer 5 and a hole injection layer 4, and the second carrier functional layer includes an electron transport layer 7. In other embodiments, the second carrier functional layer may further include the electron injection layer (not shown), which is located between the cathode 9 and the electron transport layer 7. In other embodiments, the first carrier functional layer may also include only the hole transport layer 3, or only the hole injection layer 4.

[0095] In the above embodiments, regardless of whether the light-emitting device is upright or inverted, the electron injection layer is adjacent to the cathode 9, the electron transport layer 7 and the hole transport layer 5 are adjacent to the light-emitting layer 6, and the hole injection layer 4 is adjacent to the anode 3.

[0096] In some embodiments, the light-emitting device further includes an encapsulation layer disposed on the second electrode.

[0097] In some embodiments, the thickness of the first electrode is 10–100 nm.

[0098] In some optional embodiments of this example, the thickness of the first electrode is within the range of any one or any two of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0099] In some embodiments, the thickness of the second electrode is 10–100 nm.

[0100] In some optional embodiments of this example, the thickness of the second electrode is within the range of any one or any two of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0101] In some embodiments, the thickness of the light-emitting layer 6 is 10–100 nm.

[0102] In some optional embodiments of this example, the thickness of the light-emitting layer 6 is within the range of any one or any two of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0103] In some embodiments, the thickness of the hole injection layer 4 is 10–100 nm.

[0104] In some optional embodiments of this example, the thickness of the hole injection layer 4 is within the range of any one or any two of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0105] In some embodiments, the thickness of the hole transport layer 5 is 10–100 nm.

[0106] In some optional embodiments of this example, the thickness of the hole transport layer 5 is within the range of any one or any two of the following: 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0107] In some embodiments, the encapsulation layer is an organic encapsulation layer with a thickness of 0.1 μm to 1 μm. In some optional embodiments of this example, the thickness of the organic encapsulation layer is any one or any two of 0.1 μm, 0.2 μm, 0.4 μm, 0.6 μm, 0.8 μm, 1.0 μm, etc.; the material of the organic encapsulation layer is selected from at least one of acrylic resin, epoxy resin, polyimide, and polyethylene.

[0108] In another embodiment, the encapsulation layer is an inorganic encapsulation layer with a thickness of 0.1 μm to 1 μm. In some optional embodiments of this example, the thickness of the inorganic encapsulation layer is any one or any two of 0.1 μm, 0.2 μm, 0.4 μm, 0.6 μm, 0.8 μm, and 1.0 μm. The material of the inorganic encapsulation layer is selected from at least one of nitrides, non-metallic oxides, and metal oxides that have water and oxygen barrier properties, such as silicon oxide, silicon nitride, and Al2O3.

[0109] In some embodiments, the anode 3 and the cathode 9 are each selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2. At least one of O2 / Al / TiO2; and / or,

[0110] The material of the light-emitting layer 6 includes at least one of organic light-emitting materials, single-structure quantum dots, and core-shell structure quantum dots. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex light-emitting materials. The shell of the core-shell structure quantum dot includes one or more layers.The material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are each selected from at least one of group I-VI compounds, group I-V-VI compounds, group II-IV compounds, and group III-VI compounds, wherein group I Group I-VI compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. Group V-VI compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; Group II-IV compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAl One or more of PAs, GaAl PSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and group III-VI compounds including at least one of CuInS2, CuInSe2, and AgInS2; and / or,

[0111] The materials of the electron transport layer 7 and the electron injection layer are respectively selected from inorganic or organic materials; the inorganic materials are selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin sulfide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate; the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic materials are selected from one or more of the following: quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or,

[0112] The hole injection layer 4 is selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, high-conductivity organic molecular materials, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60; wherein the high-conductivity organic molecular material is selected from poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), free phthalocyanine (H2PC), copper phthalocyanine (CuPc), platinum phthalocyanine (PtPC), titanium phthalocyanine (T... iOPC), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN), 7,7,8,8-tetracyano-p-benzodiquinone dimethyl ether (TCNQ), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine (Di-NPB), N,N′-di(phenyl)-N,N′-di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl At least one of the following: N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) (3DMFL-BPA), and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxide is selected from N... At least one of iO, MoO3, WO3, CuO, and Cu2O; the transition metal sulfide compound is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS; and / or,

[0113] The hole transport layer 5 is made of materials selected from TFB, PVK, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS and its derivatives, TAPC, MCC, C60, 9,9'-(1,3-phenyl)di-9H-carbazole (mCP), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), N,N'-di(naphthyl-2-yl)-N,N'-di(phenyl)biphenyl-4,4'-diamine (B-NPB), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine (Spiro-NPB), N2,N7-D 1-1-Naphthyl-N2,N7,9,9-Tetraphenyl-9H-fluorene-2,7-diamine (DPFL-NPB), 9,9-Di(2-ethylhexyl)-N,N'-Di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine (DOFL-NPB), N4,N4'-Di(4-vinylphenyl)-N4,N4'-di-1-naphthylbiphenyl-4,4'-diamine (VNPB), 3,6-bis(9-phenyl-9H-carbazole-3-yl)-9-phenyl-9H-carbazole (Tr i s-PCz), 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazol-3-yl)-pyridine (PCzAc), N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (PCbz-PA1), 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine (DMFL-TPD), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (Sp i) ro-TPD), N,N,N',N'-tetra(2-naphthyl)-1,1'-biphenyl-4,4'-diamine (β-TNB), 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobisfluorene (Sp i ro-TAD), N,N'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine (BF-DPB), N,N,N',N'-tetraphenylbenzidinediamine (BPBPA), 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA), 9,9-bis[4-[bis(bis(biphenyl-4-yl)amino]phenyl]fluorene (BPAPF), tri(4-biphenyl)amine (TBA), 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline) (TSBPA), 4,At least one of 4'-(9H-fluorene-9-alkylene)bis[N,N-bis(4-methylphenyl)-benzylamine (DTAF).

[0114] This application also provides a method for manufacturing a light-emitting device according to any of the above examples, such as... Figure 6 As shown, it includes the following steps:

[0115] S11, Provide a substrate;

[0116] S12. A first electrode is disposed on the substrate;

[0117] S13. A pixel defining layer is provided on the first electrode, wherein the pixel defining layer is provided with a first groove, a second groove and a connecting channel, and the first groove is connected to the second groove through the connecting channel;

[0118] S14. A light-emitting layer and a first charge carrier functional layer are sequentially formed in the first groove;

[0119] S15. An adsorption layer is formed in the second groove to obtain a prefabricated device;

[0120] S16. Expose the prefabricated device to air;

[0121] S17. A second electrode is disposed on the exposed prefabricated device to obtain the light-emitting device.

[0122] The number of the first groove, the second groove, and the connecting channel is at least one; the adsorption layer is used to adsorb the passivating agent, and the connecting channel is used to introduce the passivating agent in the adsorption layer into the first carrier functional layer.

[0123] In this embodiment, a first groove, a second groove, and a connection channel are provided on the pixel defining layer. The first carrier functional layer is located in the first groove. The adsorption layer in the second groove is used to adsorb the passivating agent. The connection channel is used to introduce the passivating agent in the second groove into the first carrier functional layer of the first groove. The passivating agent can improve the defect state of the first carrier functional layer, thereby improving the luminous efficiency and lifespan of the light-emitting device.

[0124] In one embodiment, prior to forming the light-emitting layer, the method further includes forming a second carrier functional layer within the first groove. Accordingly, the light-emitting layer and the first carrier functional layer are sequentially formed on the second carrier functional layer.

[0125] In some embodiments, the material of the first carrier functional layer comprises a metal oxide, and the adsorption layer is used to adsorb a passivating agent, the passivating agent comprising water and / or a hydroxyl-containing substance. In this embodiment, the surface of the metal oxide generally has oxygen vacancy defects, which can trap excitons in the light-emitting layer, leading to exciton quenching and reducing device performance. The passivating agent comprises hydroxyl groups, and the oxygen atoms in the hydroxyl groups can generate electrostatic interactions with the metal atoms on the surface of the metal oxide. Through this electrostatic interaction, the oxygen atoms in the hydroxyl groups can fill the oxygen vacancies on the surface of the metal oxide, thereby passivating these surface defects, reducing exciton quenching, and thus improving the luminous efficiency and lifespan of the light-emitting device.

[0126] In some embodiments, the mass ratio of the metal oxide to the adsorption layer material is (1-10000):1. By appropriately setting the mass ratio of the metal oxide to the adsorption layer material, the adsorption effect of the adsorption layer on water molecules can be ensured, thereby ensuring the passivation effect of water molecules on the metal oxide.

[0127] In some optional embodiments of this example, the mass ratio of the metal oxide to the material of the adsorption layer is any one or any two of (1:1), (50:1), (100:1), (500:1), (1000:1), (3000:1), (5000:1), (7000:1), (9000:1), (10000:1), etc.

[0128] In some embodiments, the metal oxide includes one or more of the following: zinc oxide, magnesium oxide, calcium oxide, indium oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, zinc magnesium oxide, zinc calcium oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, lithium titanium oxide, and zinc aluminum oxide, and the doping element of the doped metal oxide includes one or more of yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and halogens.

[0129] In some embodiments, the hydroxyl-containing substance is selected from alcohol compounds; the alcohol compounds are selected from one or more of methanol, ethanol, propanol, butanol, pentanol, butanediol, ethylene glycol, propylene glycol, dipropylene glycol, isohexyl glycol, 2-methyl-2,4-pentanediol, glycerol, polyethylene glycol, and polyvinyl alcohol.

[0130] In some embodiments, the passivating agent is water, and correspondingly, the material of the pixel defining layer includes a hydrophobic material. In this embodiment, since the pixel defining layer contains a hydrophobic material, and the first groove is formed by the recess of the pixel defining layer, the groove wall of the first groove also includes a hydrophobic material, directly exposing the first charge carrier functional layer in the first groove to the air. The hydrophobic material has a certain repulsive effect on water molecules in the air, resulting in low adsorption efficiency of the first charge carrier functional layer for water molecules, which affects the passivation effect of water molecules on the first charge carrier functional layer. However, in this embodiment, on the one hand, the material of the adsorption layer has a strong adsorption effect on water molecules in the air, allowing the material of the adsorption layer to adsorb more water molecules in the air and release the adsorbed water molecules under certain conditions. The water molecules then move to the first charge carrier functional layer through the connecting channel, which can effectively improve the passivation effect of water molecules on the metal oxides in the first charge carrier functional layer. On the other hand, the adsorption layer is disposed in the second groove, which is spaced apart from the first groove. The adsorption layer is not introduced into the interior of the first groove, which can prevent the material of the adsorption layer from having a negative impact on the functional layer in the first groove.

[0131] In some embodiments, the material of the adsorption layer includes one or more of the following: polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyurethane, polyamide, cellulose ether and its derivatives, chitosan and its derivatives, alginate and its derivatives, hyaluronic acid and its derivatives, pentosan and its derivatives, dextran and its derivatives, phosphorus pentoxide, potassium carbonate, sodium sulfate, calcium sulfate, magnesium sulfate, calcium chloride, magnesium chloride, hyaluronic acid, and molecular sieve.

[0132] In some embodiments, in step S17, both the adsorption layer and the first charge carrier functional layer in the prefabricated device are exposed to air, so that the adsorption layer and the first charge carrier functional layer can simultaneously adsorb water molecules in the air.

[0133] Furthermore, the exposure time of the prefabricated device in air is 10 min to 1440 min, and / or the humidity in the air is 50% to 100%; in this example, by appropriately setting the exposure time and air humidity, it is ensured that the adsorption layer can absorb sufficient water molecules.

[0134] In some optional embodiments of this example, the exposure time of the prefabricated device in air is any one or any two of the following: 10 min, 60 min, 240 min, 480 min, 960 min, 1080 min, 1200 min, 1440 min.

[0135] In some alternative embodiments of this example, when the prefabricated device is exposed to air, the humidity of the air is within the range of any one or any two of 50%, 60%, 70%, 80%, 90%, 100%, etc.

[0136] In some embodiments, after step S17, the method further includes annealing the light-emitting device. In this embodiment, annealing the light-emitting device allows the adsorbed water molecules in the adsorption layer to be released again. After being released, the water molecules move through the connecting channel to the first groove, thereby achieving passivation of the first carrier functional layer.

[0137] In some embodiments, the annealing process for the light-emitting device involves an annealing temperature of 100°C to 150°C and / or an annealing time of 10 min to 60 min. In this example, by appropriately setting the annealing time and temperature, it is ensured that the water molecules adsorbed by the adsorption layer can obtain sufficient energy to overcome the interaction forces with the molecules of the adsorption layer material, thereby ensuring that the water molecules can be fully released and move into the first groove.

[0138] In some optional embodiments of this example, the annealing temperature is a range between any one or any two of 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, etc.

[0139] In some optional embodiments of this example, the annealing temperature is any one or any two of 10 min, 20 min, 30 min, 40 min, 50 min, 60 min, etc.

[0140] The specific structures of the first carrier functional layer, the second carrier functional layer, the first electrode, and the second electrode in this embodiment can be referred to the relevant content in the above-mentioned light-emitting device embodiment, and will not be elaborated here.

[0141] This application also provides a display device, which includes the light-emitting device described above or the light-emitting device prepared by the method described above.

[0142] In some implementations, the display device can be any electronic product with display functionality, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among these, smart wearable devices can be, for example, smart bracelets, smartwatches, or virtual reality devices.

[0143] The above solution will be further explained below with reference to specific embodiments. The preferred embodiments of this application are described in detail below.

[0144] Example 1

[0145] This application provides a method for fabricating a light-emitting device, the method of which is as follows:

[0146] Step 1: Provide a substrate.

[0147] Step 2: Set an ITO anode on the substrate. The thickness of the anode is 100 nm.

[0148] Step 3: A pixel boundary layer is formed on the anode using a photolithography process. The pixel boundary layer is made of polyimide and has an average thickness of 1 μm. The pixel boundary layer has at least one first groove, one second groove, and a connecting channel. The first groove is connected to the second groove through the connecting channel, and the anode is exposed in the first groove.

[0149] Step 4: Using inkjet printing, a hole injection layer, a hole transport layer, a light-emitting layer, and a first carrier functional layer are sequentially formed in the first groove; wherein, the hole injection layer is made of PEDOT:PSS and has an average thickness of 40nm; the hole transport layer is made of TFB and has a thickness of 20nm; the light-emitting layer is made of CdSe and has a thickness of 30nm; and the first carrier functional layer is made of ZnO and has a thickness of 30nm.

[0150] Step 5: An adsorption layer is formed in the second groove to obtain a prefabricated device. The material of the adsorption layer is hyaluronic acid. The adsorption layer is used to adsorb water molecules. The thickness of the adsorption layer is 1 μm. The mass ratio of ZnO to hyaluronic acid is 100:1.

[0151] Step 6: Expose the prefabricated components to air for 30 minutes at a humidity of 90%.

[0152] Step 7: Prepare a cathode on the prefabricated device by vapor deposition. The cathode material is Al and the cathode thickness is 100 nm.

[0153] Step 8: Form an encapsulation layer on the cathode to obtain a light-emitting device.

[0154] Step 9: Anneal the light-emitting device for 20 minutes at a temperature of 140°C.

[0155] Example 2

[0156] The difference from Example 1 is as follows:

[0157] The material of the adsorption layer in step 5 is hydroxypropyl methylcellulose.

[0158] Example 3

[0159] The difference from Example 1 is as follows:

[0160] In step 4, the material of the first carrier functional layer is Mg-doped ZnO.

[0161] Example 4

[0162] The difference from Example 1 is as follows:

[0163] In step 5, the mass ratio of ZnO to hyaluronic acid is 1:1. 。

[0164] Example 5

[0165] The difference from Example 1 is as follows:

[0166] In step 5, the mass ratio of ZnO to hyaluronic acid is 10000:1. 。

[0167] Example 6

[0168] The difference from Example 1 is as follows:

[0169] In step 6, the prefabricated components are exposed to air for 10 minutes.

[0170] Example 7

[0171] The difference from Example 1 is as follows:

[0172] In step 6, the prefabricated components are exposed to air for 1440 minutes.

[0173] Example 8

[0174] The difference from Example 1 is as follows:

[0175] In step 9, the light-emitting device is annealed at a temperature of 100°C.

[0176] Example 9

[0177] The difference from Example 1 is as follows:

[0178] In step 9, the light-emitting device is annealed at a temperature of 150°C.

[0179] Comparative Example 1

[0180] The difference from Example 1 is as follows:

[0181] Step 5 was not performed;

[0182] The corresponding change in step 6 is to expose the first carrier functional layer to air.

[0183] Comparative Example 2

[0184] The difference from Example 1 is as follows:

[0185] Step 6 was not performed.

[0186] Comparative Example 3

[0187] The difference from Example 1 is as follows:

[0188] Step 9 was not performed.

[0189] Comparative Example 4

[0190] The difference from Example 1 is as follows:

[0191] In step 5, the mass ratio of ZnO to hyaluronic acid is 1,000,000:1.

[0192] Comparative Example 5

[0193] The difference from Example 1 is as follows:

[0194] In step 6, the prefabricated components are exposed to air for 3 minutes.

[0195] Comparative Example 6

[0196] The difference from Example 1 is as follows:

[0197] In step 9, the light-emitting device is annealed at a temperature of 30°C.

[0198] The light-emitting devices prepared in Examples 1 to 9 and Comparative Examples 1 to 6 were subjected to current efficiency tests and lifespan tests.

[0199] The method for testing current efficiency is as follows: The luminous area is set to 2mm × 2mm = 4mm. 2 The brightness values ​​of the light-emitting device are intermittently collected within the driving voltage range of 0V to 8V. The initial voltage value for collecting the brightness is 0.5V, and the brightness is collected every 0.2V. The current efficiency of the light-emitting device under the current collection condition is obtained by dividing the brightness value collected each time by the corresponding current density.

[0200] The lifespan test method is as follows: Under constant current (2mA) drive, a 128-channel QLED lifespan test system is used to perform electroluminescence lifespan analysis on each light-emitting device, record the time (T95, h) required for each light-emitting device to decay from maximum brightness to 95%, and calculate the time (T95@1000nit, h) required for each light-emitting device to decay from 100% brightness to 95% brightness at 1000nit using the decay fitting formula.

[0201] The test results are shown in Table 1.

[0202] Table 1

[0203]

[0204] As shown in Table 1, compared to Comparative Example 1, Examples 1-9, by providing at least one first groove, one second groove, and a connecting channel on the pixel defining layer, with the first charge carrier functional layer located within the first groove and an adsorption layer in the second groove for adsorbing passivating agent, and the connecting channel for guiding the passivating agent from the second groove into the first groove, significantly increase the current efficiency and lifetime of the devices. This is likely because the adsorption layer of the light-emitting devices in Examples 1-9 has a strong adsorption effect on the passivating agent, allowing it to adsorb more passivating agent. This enables more passivating agent to move through the connecting channel to the first charge carrier functional layer, improving the passivation effect of the passivating agent on the first charge carrier functional layer, reducing defects and exciton quenching on the surface of the first charge carrier functional layer, and thus improving the luminous efficiency and lifetime of the light-emitting device.

[0205] Based on the test results of Examples 1, 4, and 5 of the light-emitting device and Comparative Example 4 of the light-emitting device, it can be seen that by appropriately setting the mass ratio of the metal oxide to the adsorption layer material, the passivation effect of the passivating agent on the first carrier functional layer can be further ensured, thereby improving the luminous efficiency and service life of the light-emitting device.

[0206] Based on the test results of Examples 1, 6, and 7 of the light-emitting device and Comparative Examples 2 and 5 of the light-emitting device, it can be seen that by exposing the pre-fabricated device to air for a certain period of time, the adsorption effect of the adsorption layer on the passivating agent can be improved, further ensuring the passivation effect of the passivating agent on the first carrier functional layer, and improving the luminous efficiency and service life of the light-emitting device.

[0207] Based on the test results of Examples 1, 8, and 9 of the light-emitting device and Comparative Examples 3 and 6 of the light-emitting device, it can be seen that by appropriately setting the annealing temperature range, the passivation effect of the passivating agent on the first carrier functional layer can be further ensured, thereby improving the luminous efficiency and service life of the light-emitting device.

[0208] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. An optical structure, characterized in that, include: substrate; A pixel defining layer is disposed on the substrate; The pixel defining layer is provided with a first groove, a second groove and a connecting channel, and the first groove is connected to the second groove through the connecting channel.

2. The optical structure according to claim 1, characterized in that, The connecting channel is located between the first groove and the second groove. The connecting channel includes a channel inlet and a channel outlet. The channel inlet communicates with the second groove, and the channel outlet communicates with the first groove. Wherein, the channel outlet is located in the middle of the groove wall of the first groove, and in the direction perpendicular to the surface of the substrate, the average distance between the side of the channel outlet near the substrate and the bottom of the first groove is 0.1 to 0.5 μm, optionally 0.2 to 0.4 μm; and / or, The channel inlet is located at the bottom of the groove wall of the second groove, and in a direction parallel to the surface of the substrate, the side of the channel inlet closest to the substrate is flush with the bottom of the second groove; or, the channel inlet is located on the bottom of the second groove; and / or, The connecting channel is in one or more shapes, including straight, arc-shaped, U-shaped, and S-shaped; and / or, The average length of the connection channel is 5–100 μm, optionally 5–95 μm; and / or, The average cross-sectional area of ​​the connecting channel is 1–400 μm. 2 The size can be selected from 1 to 100 μm. 2 .

3. The optical structure according to claim 1 or 2, characterized in that, The first groove and / or the second groove are shaped like one or more of the following: funnel, cylinder, elliptical cylinder, cuboid, cube, prism, and pyramid; and / or, The first groove is funnel-shaped, and a first opening is provided at the end of the first groove away from the substrate. The width of the first groove gradually decreases from the first opening towards the substrate, and the width of the first opening is 10–100 μm, optionally 10–95 μm; and / or, The second groove is funnel-shaped, and a second opening is provided at the end of the second groove away from the substrate. The width of the second groove gradually decreases from the second opening towards the substrate, and the width of the second opening is 10–100 μm, optionally 10–95 μm; and / or, The distance between the center of the first groove and the center of the second groove is 10–100 μm, optionally 10–95 μm; and / or, The depth of the first groove is 1–2 μm, optionally 1.1–1.9 μm; and / or, The depth of the second groove is 1–2 μm, optionally 1.1–1.9 μm; and / or, The thickness of the pixel defining layer is 1–2 μm, optionally 1.1–1.9 μm; and / or, The pixel defining layer is made of a hydrophobic material; and / or, The substrate includes a substrate and a TFT layer disposed on the substrate.

4. The optical structure according to claim 3, characterized in that, The hydrophobic material includes one or more of the following: polyamide, polyimide, polysiloxane, polymethyl methacrylate, polybutyl methacrylate, polycyclohexyl methacrylate, polystyrene, polyisoprene, polyhexafluoropropylene, fluorinated poly(p-xylene), fluorinated polysiloxane, fluorinated polyimide, and fluorinated polyamide; and / or, The substrate material includes one or more of the following: glass, quartz, polyimide, polyethylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, metal, and alloy; and / or, The material of the TFT layer includes metal oxide or polycrystalline silicon, and the metal oxide includes one of indium gallium zinc oxide, indium zinc oxide, indium gallium oxide, and gallium zinc oxide.

5. A light-emitting device, characterized in that, include: An optical structure, wherein the optical structure is the optical structure as described in any one of claims 1 to 4; A light-emitting layer is disposed in the first groove; A first charge carrier functional layer is disposed on the light-emitting layer, and the first charge carrier functional layer and the connection channel are adjacent to each other in the first groove. An adsorption layer is disposed in the second groove, and the adsorption layer is adjacent to the connecting channel in the second groove.

6. The light-emitting device according to claim 5, characterized in that, The material of the first carrier functional layer includes metal oxides; and / or, The adsorption layer is used to adsorb passivating agents, which include water and / or hydroxyl-containing substances; and / or, The pixel defining layer is made of a hydrophobic material; and / or, The thickness of the adsorption layer is 1–2 μm, optionally 1.1–1.9 μm; and / or, The thickness of the first carrier functional layer is 10–100 nm, and optionally 10–95 μm.

7. The light-emitting device according to claim 6, characterized in that, The mass ratio of the metal oxide to the adsorption layer material is (1-10000):1; and / or, The metal oxide includes one or more of the following in a doped or undoped state: zinc oxide, magnesium oxide, calcium oxide, indium oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, zinc magnesium oxide, zinc calcium oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, lithium titanium oxide, and zinc aluminum oxide. The doped elements in the doped state of the metal oxide include one or more of yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and halogens; and / or, The adsorption layer material includes one or more of the following: polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyurethane, polyamide, cellulose ether and its derivatives, chitosan and its derivatives, alginate and its derivatives, hyaluronic acid and its derivatives, pentosan and its derivatives, dextran and its derivatives, phosphorus pentoxide, potassium carbonate, sodium sulfate, calcium sulfate, magnesium sulfate, calcium chloride, magnesium chloride, hyaluronic acid, and molecular sieves; and / or, The hydroxyl-containing substance is selected from alcohol compounds; wherein the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, pentanol, butanediol, ethylene glycol, propylene glycol, dipropylene glycol, isohexyl glycol, 2-methyl-2,4-pentanediol, glycerol, polyethylene glycol, and polyvinyl alcohol.

8. The light-emitting device according to any one of claims 5 to 7, characterized in that, The light-emitting device further includes a first electrode, a second carrier functional layer, and a second electrode. The first electrode is disposed on the substrate, and the position of the first electrode corresponds to that of the first groove and is exposed in the first groove. The second charge carrier functional layer, the light-emitting layer, the first charge carrier functional layer, and the second electrode are sequentially stacked on the first electrode.

9. The light-emitting device according to claim 8, characterized in that, The first electrode is the anode, the second electrode is the cathode, the first carrier functional layer includes an electron injection layer and / or an electron transport layer, and the second carrier functional layer includes a hole transport layer and / or a hole injection layer; or, The first electrode is a cathode, the second electrode is an anode, the first carrier functional layer includes a hole transport layer and / or a hole injection layer, and the second carrier functional layer includes an electron injection layer and / or an electron transport layer. The electron injection layer is adjacent to the cathode, the electron transport layer and the hole transport layer are adjacent to the light-emitting layer, and the hole injection layer is adjacent to the anode.

10. The light-emitting device according to claim 9, characterized in that, The anode and the cathode are each selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or, The material of the light-emitting layer includes at least one of organic light-emitting materials, single-structure quantum dots, and core-shell structure quantum dots. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex light-emitting materials. The shell of the core-shell structure quantum dot includes one or more layers.The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are each selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, and HgSe. One or more of the following compounds: Te, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and group IV-VI compounds including SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, and SnSeT. e, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and III-V compounds including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, and AlPSb One or more of InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and at least one of Group I-III-VI compounds including CuInS2, CuInSe2, and AgInS2; and / or, The electron transport layer and electron injection layer are respectively selected from inorganic or organic materials; the inorganic materials are selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin sulfide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate; the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic materials are selected from quinoxaline compounds, imidazole compounds, and triazine compounds. The hole injection layer is selected from one or more of the following: compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or the hole injection layer is selected from at least one of the following: TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, high-conductivity organic molecular materials, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60.The high-conductivity system organic molecular materials are selected from poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) (PEDOT:PSS), free phthalocyanine (H2PC), copper phthalocyanine (CuPc), platinum phthalocyanine (PtPC), titanium phthalocyanine (TiOPC), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN), 7,7,8,8-tetracyano-p-benzoquinone dimethyl ether (TCNQ), N,N'-bis[ [4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-biphenyl (Di-NPB), N,N'-di(phenyl)-N,N'-di(4'-(N,N-di(phenylamino)-4-biphenyl)-biphenyl (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-di-diphenylamino)-4-biphenyl)-biphenyl (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)-[4-(N,N-diphenylamino)-[4-biphenyl]-[4-[4,N-diphenylamino ... [p-Tolylamino]phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9 At least one of 9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine (3DMFL-BPA) and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxide is selected from at least one of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal sulfide is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS; and / or, The hole transport layer material is selected from TFB, PVK, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS and its derivatives, TAPC, MCC, C60, 9,9'-(1,3-phenyl)bis-9H-carbazole (mCP), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), N,N'-bis(naphthyl-2-yl)-N,N'-bis(phenyl)biphenyl-4,4'-diamine (B-NPB), N2,N7-bis-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H] [-fluorene]-2,7-diamine (Spiro-NPB), N2,N7-DI-1-naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7-diamine (DPFL-NPB), 9,9-di(2-ethylhexyl)-N,N'-di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine (DOFL-NPB), N4,N4'-di(4-vinylphenyl)-N4,N4'-di-1-naphthylbiphenyl-4,4'-diamine (VNPB), 3,6-bis(9-phenyl-9H-carbazole-3-yl)-9-phenyl-9H-carbazole (Tris-PCz), 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazole) Azol-3-yl)-idine (PCzAc), N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (PCbz-PA1), 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine (DMFL-TPD), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (Spiro-TPD), N,N,N',N'-tetra(2-naphthyl)-1,1 β-Biphenyl-4,4'-diamine (β-TNB), 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobisfluorene (Spiro-TAD), N,N'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine (BF-DPB), N,N,N',N'-tetraphenylbenzidine diamine (BPBPA), 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA), 9,9-bis[4-[bis(bisphenyl-4-yl)amino]phenyl]fluorene (BPAPF), tris(4-biphenyl)amine (TBA), 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline) (TSBPA), 4,At least one of 4'-(9H-fluorene-9-alkylene)bis[N,N-bis(4-methylphenyl)-benzylamine (DTAF).

11. A method for fabricating a light-emitting device, characterized in that, Includes the following steps: Provide substrate; A first electrode is disposed on the substrate; A pixel defining layer is provided on the first electrode, wherein the pixel defining layer is provided with a first groove, a second groove and a connecting channel, and the first groove is connected to the second groove through the connecting channel; A light-emitting layer and a first charge carrier functional layer are sequentially formed within the first groove; An adsorption layer is formed in the second groove to obtain a prefabricated device; Expose the prefabricated device to air; A second electrode is disposed on the exposed prefabricated device to obtain the light-emitting device.

12. The preparation method according to claim 11, characterized in that, After the step of setting the second electrode on the exposed prefabricated device, the method further includes: annealing the light-emitting device; and / or, Before forming the light-emitting layer, the method further includes: forming a second carrier functional layer in the first groove; the light-emitting layer and the first carrier functional layer are sequentially formed on the second carrier functional layer.

13. The preparation method according to claim 12, characterized in that, In the step of exposing the prefabricated device to air: the exposure time of the prefabricated device to air is 10 min to 1440 min, and / or the humidity in the air is 50% to 100%; and / or In the step of annealing the light-emitting device, the annealing temperature is 100℃~150℃, and / or the annealing time is 10min~60min.

14. A display device, characterized in that, It includes the optical structure as described in any one of claims 1 to 4, or the light-emitting device as described in any one of claims 5 to 10, or the light-emitting device prepared by the method described in any one of claims 11 to 13.

Images