A memory single-particle irradiation testing system and method based on multi-dimensional intelligent chart analysis

Abstract

This application discloses a memory single-event irradiation testing system and method based on multi-dimensional intelligent chart analysis. The system includes a lower-level data acquisition module and a higher-level multi-dimensional intelligent analysis platform. The lower-level data acquisition module writes reference data to the full address of the memory according to the test mode configured by the higher-level computer. During irradiation, it reads the full address data of the memory in real time and compares it with the reference data to capture single-event flip error addresses and error data. The error addresses, error data, real-time irradiation parameters, and test configuration parameters are packaged into raw data and sent to the higher-level computer. The higher-level multi-dimensional intelligent analysis platform is used to configure the test mode, memory operating parameters, and irradiation-related parameters, and generates multi-dimensional intelligent charts based on the raw data. This application provides accurate and reliable data support and visual decision-making basis for memory radiation resistance design optimization, sensitive bit protection strategy formulation, and reliability assessment.

Description

Technical Field

[0001] This application relates to the field of semiconductor memory device reliability testing technology, and in particular to a memory single-event irradiation testing system and method based on multi-dimensional intelligent chart analysis. Background Technology

[0002] With the rapid development of high-reliability applications such as aerospace, nuclear industry, and satellites, single-event effects (SEUs) in memory devices under radiation environments have become a key factor affecting system reliability. A SEU causes data bits in a memory cell to flip, leading to system errors or functional failures.

[0003] Existing single-event irradiation testing methods primarily rely on irradiation equipment (such as heavy-ion accelerators and proton sources) to irradiate the memory, while simultaneously collecting error data through external testing instruments or FPGA control boards. However, traditional testing methods have the following shortcomings: insufficient correlation analysis of multiple factors (such as radiation type, dose, time, operating frequency, and test mode), making it difficult to reveal flip-flop patterns; lack of quantification of the irradiation sensitivity characteristics of the data port (DQ port), failing to provide targeted basis for circuit design optimization; and low data visualization, mainly relying on raw logs or simple statistics, resulting in low analysis efficiency and difficulty in identifying hotspot areas or trends.

[0004] Therefore, a system and method integrating real-time data acquisition and multi-dimensional intelligent chart analysis are needed to accurately mine the single-particle flip-flop pattern of memory and optimize its radiation resistance performance. Summary of the Invention

[0005] This application provides a memory single-event irradiation testing system and method based on multi-dimensional intelligent chart analysis, which provides accurate and reliable data support and visual decision-making basis for memory radiation resistance design optimization, sensitive bit protection strategy formulation and reliability assessment.

[0006] This application provides the following solution:

[0007] According to the first aspect, a memory single-particle irradiation testing system based on multi-dimensional intelligent chart analysis is provided. The system includes: a lower-level data acquisition module and a higher-level multi-dimensional intelligent analysis platform. The lower-level data acquisition module is used to connect to the memory and the irradiation equipment, write reference data to the full address of the memory according to the test mode configured by the higher-level computer, read the full address data of the memory in real time during the irradiation process, compare it with the reference data to capture the error address and error data of single-particle flip, and simultaneously acquire the real-time irradiation parameters output by the irradiation equipment. The error address, error data, real-time irradiation parameters and test configuration parameters are packaged into raw data and sent to the higher-level computer. The higher-level multi-dimensional intelligent analysis platform is used to configure the test mode, memory operating parameters and irradiation correlation parameters, receive the raw data sent by the lower-level computer, and generate a multi-dimensional intelligent chart based on the raw data. The multi-dimensional intelligent chart supports combined correlation analysis of radiation type, dose, time, operating frequency and test mode.

[0008] According to one achievable method in an embodiment of this application, the test mode includes at least one of a fixed value mode, an incremental data mode, and a decremental data mode, wherein the reference data is determined by the host computer according to the configured test mode.

[0009] According to one achievable method in the embodiments of this application, the multi-dimensional intelligent chart includes an irradiation error distribution heatmap. The generation of the irradiation error distribution heatmap includes: splitting the collected error addresses into high-order address segments and low-order address segments, which correspond to the row coordinates and column coordinates of the heatmap, respectively, and establishing a two-dimensional address matrix; accumulating and counting the number of flips that occur during the test for each address location, and associating it with the corresponding irradiation dose or irradiation time information.

[0010] According to one achievable method in an embodiment of this application, the multi-dimensional intelligent chart includes an address hotspot map, and the generation of the address hotspot map includes: obtaining erroneous addresses and dividing pages into pages with a preset number of consecutive addresses; calculating the flip density of each page based on the cumulative number of reads, the number of addresses within the page, and the cumulative number of flips within the page; and marking pages with a flip density greater than or equal to a preset threshold as hotspot pages.

[0011] According to one achievable method in an embodiment of this application, the multi-dimensional intelligent chart includes a flipped bit distribution statistical chart. The generation of the flipped bit distribution statistical chart includes: obtaining a flipped bit mask by bitwise XORing the error data with the reference data; calculating the cumulative flipped number of each data port within the test period based on the flipped bit mask; the flipping includes flipping from 0 to 1 and flipping from 1 to 0; sorting the data ports according to the cumulative flipped number and marking the data ports with higher irradiation sensitivity.

[0012] According to one achievable method in an embodiment of this application, the multi-dimensional intelligent chart includes an irradiation error distribution and an irradiation dose correlation curve. The generation of the irradiation error distribution and irradiation dose correlation curve includes: generating a corresponding correlation curve with irradiation dose as the horizontal axis and at least one of the cumulative flip count, data port flip count, and / or address flip distribution as the vertical axis; performing fitting processing on the correlation curve using a linear fitting or polynomial fitting algorithm, calculating the correlation coefficient of each curve, and the correlation coefficient quantifies the correlation strength between irradiation dose and flip count.

[0013] According to one achievable method in an embodiment of this application, the multi-dimensional intelligent chart includes an irradiation error distribution and a test mode correlation curve. The generation of the irradiation error distribution and test mode correlation curve includes: under the conditions of fixed irradiation dose, irradiation time, and memory operating frequency, performing tests and collecting flip-over data for each test mode; respectively calculating the overall cumulative flip-over count of the memory, the cumulative flip-over count of each data port, and / or the flip-over situation of hotspot address regions under each test mode; plotting a comparison chart with the test mode as the horizontal axis and the flip-over count or flip-over characteristic index as the vertical axis; marking the test mode with the fewest flip-over counts or the most uniform flip-over distribution as the better mode, and / or marking the test mode with the most flip-over counts or the most uneven distribution as the worse mode.

[0014] According to one achievable method in the embodiments of this application, the multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve of operating frequency. The generation of the irradiation error distribution and the correlation curve of operating frequency includes: under fixed irradiation dose, test mode and irradiation time conditions, grouping the collected error data according to a preset operating frequency gradient; respectively counting the total cumulative number of flips of each operating frequency group, the number of flips of hotspot address regions and / or the number of flips of each data port; plotting a line curve with operating frequency as the horizontal axis and the number of flips as the vertical axis, and marking the frequency points where the flip characteristics change abruptly or abnormally.

[0015] According to one achievable method in an embodiment of this application, the multi-dimensional intelligent chart includes an irradiation error distribution and time-related curve. The generation of the irradiation error distribution and time-related curve includes: under the conditions of fixed irradiation dose rate, memory operating frequency, and test pattern, collecting or statistically analyzing flip data at preset time intervals; calculating the number of new single-particle flips within each time interval, the cumulative number of flips at the end of the time interval, and the corresponding real-time or cumulative irradiation dose; plotting a curve with the test time as the horizontal axis and the number of new flips and / or cumulative flips as the vertical axis, and superimposing a reference curve showing the change of irradiation dose over time; marking or highlighting time periods in which the rate of increase in the number of flips changes significantly.

[0016] According to the second aspect, a method for single-event irradiation testing of memory based on multi-dimensional intelligent chart analysis is provided. The method includes: configuring a test mode, memory operating parameters, and irradiation correlation parameters; writing reference data determined according to the test mode to the full address of the memory; reading the full address data of the memory in real time during irradiation, comparing it with the reference data to capture error addresses and error data of single-event flips, and simultaneously acquiring real-time irradiation parameters output by the irradiation device; packaging the error addresses, error data, real-time irradiation parameters, and test configuration parameters into raw data; receiving the raw data, and generating a multi-dimensional intelligent chart based on the raw data, wherein the multi-dimensional intelligent chart supports combined correlation analysis of radiation type, dose, time, operating frequency, and test mode.

[0017] According to the specific embodiments provided in this application, the following technical effects are disclosed:

[0018] This application utilizes a lower-level computer to write reference data to the entire address in real time, capture flip-over errors through high-frequency reading and comparison during irradiation, and simultaneously collect irradiation parameters. The upper-level computer then receives the raw data and generates multi-dimensional intelligent charts supporting arbitrary combinations and correlation analysis of multiple factors such as radiation type, dose, time, operating frequency, and test mode. This significantly improves the analytical depth and efficiency of single-event effect testing for memory. The system overcomes the shortcomings of traditional testing methods, such as insufficient multi-factor correlation analysis, difficulty in quantifying data port sensitivity, and low visualization. It can intuitively present the distribution of flip-over addresses, hotspot areas, data port sensitivity, and the independent and synergistic influence patterns of various key factors. This provides accurate and reliable data support and visualized decision-making basis for memory radiation-resistant design optimization, sensitive bit protection strategy formulation, and reliability assessment, demonstrating high engineering application value.

[0019] Of course, any product implementing this application does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 System architecture diagram applicable to the memory single-particle irradiation testing system based on multi-dimensional intelligent chart analysis provided in the embodiments of this application;

[0022] Figure 2 A flowchart of a memory single-particle irradiation testing method based on multi-dimensional intelligent chart analysis provided in this application embodiment. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0024] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0025] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0026] Depending on the context, the word "if" as used here can be interpreted as "when," "when," "in response to determination," or "in response to detection." Similarly, depending on the context, the phrase "if determination" or "if detection (of the stated condition or event)" can be interpreted as "when determination," "in response to determination," "when detection (of the stated condition or event)," or "in response to detection (of the stated condition or event)."

[0027] This invention uses a 24-bit address, 16-bit wide memory as a typical application scenario. It collects single-event flip (SET) region addresses and error data from the entire memory address range during irradiation in real time via a lower-level computer. Combined with test mode reference values ​​configured on the upper-level computer, memory operating parameters, and irradiation environment parameters, a multi-dimensional intelligent chart analysis system is constructed. The system focuses on quantitatively analyzing the irradiation sensitivity characteristics of the memory data ports (DQ0-DQ15), while also correlating key influencing factors such as single-event type, dose, time, and operating frequency to accurately uncover the SET patterns of the memory. This invention solves the problems of insufficient multi-factor correlation analysis, inability to quantify data port sensitivity characteristics, and low visualization in traditional testing, providing precise data support for optimizing the radiation resistance performance of memory. It is applicable to the evaluation of single-event irradiation performance of various types of memory, including DDR, SRAM, and DRAM.

[0028] To facilitate understanding of this application, the system architecture on which this application is based will be described first. Figure 1An exemplary system architecture that can be applied to embodiments of this application is shown, such as Figure 1 As shown, the architecture of the system 100 may include: a lower-level data acquisition module 101 and a higher-level multi-dimensional intelligent analysis platform 102.

[0029] The lower-level data acquisition module 101 is used to connect to the memory and irradiation equipment. It writes reference data to the full address of the memory according to the test mode configured by the upper-level computer. During the irradiation process, it reads the full address data of the memory in real time and compares it with the reference data to capture the error address and error data of single particle flip. It also collects the real-time irradiation parameters output by the irradiation equipment at the same time. It packages the error address, error data, real-time irradiation parameters and test configuration parameters into raw data and sends it to the upper-level computer.

[0030] The host computer multi-dimensional intelligent analysis platform 102 is used to configure test modes, memory operating parameters and irradiation correlation parameters, receive raw data sent by the slave computer, and generate multi-dimensional intelligent charts based on the raw data. The multi-dimensional intelligent charts support combined correlation analysis of radiation type, dose, time, operating frequency and test mode.

[0031] Specifically, the lower-level data acquisition module 101 provides raw data for analysis. The lower-level device is connected to the memory under test and the irradiation equipment. The memory under test has a 24-bit address space (address range from 0x000000 to 0xFFFFFF) and a 16-bit data width (corresponding to data ports DQ0 to DQ15). The lower-level device performs the following operations according to the configuration instructions issued by the upper-level device:

[0032] (1) Write the corresponding baseline data into the full address space of the memory according to the test mode configured by the host computer;

[0033] (2) During the irradiation experiment, the full address data of the memory is read in real time in a loop according to the working frequency configured by the host computer and the cumulative number of full address reads;

[0034] (3) Compare the read data with the pre-written reference data bit by bit. When the data is found to be inconsistent, it is determined to be a single particle flip event. Record the 24-bit error address and the corresponding 16-bit error data of the flip.

[0035] (4) Synchronously collect real-time irradiation parameters output by the irradiation equipment, including but not limited to single particle type, cumulative irradiation dose and irradiation timestamp;

[0036] (5) Pack the recorded error addresses, error data, irradiation parameters and test configuration parameters into a preset unified data frame format, wherein the data frame format includes a frame header, address field, error data field, irradiation parameter field, configuration parameter field, check bit and frame tail;

[0037] (6) Send the packaged data frame to the host computer in real time.

[0038] The above operations are executed in real time by the lower-level hardware logic and firmware to ensure the capture of erroneous data, the synchronous acquisition of irradiation parameters, and the highly reliable transmission of data during the irradiation process, thereby providing a complete and accurate raw data foundation for the multi-dimensional intelligent analysis of the upper-level computer.

[0039] The host computer multi-dimensional intelligent analysis platform 102 provides benchmarks and variables for analysis through parameter configuration. Specific configuration details include the following:

[0040] (1) Test mode configuration

[0041] Users can select and set the test mode through the configuration interface, which serves as the baseline data type for writing to the full address space of memory. Supported test modes include, but are not limited to:

[0042] Fixed value patterns, such as all 0s (0x0000), all 1s (0xFFFF), alternating patterns (0x5555, 0xAAAA), etc.;

[0043] Incremental data pattern, that is, the base data starts from 0x0000 and changes according to the address increment rule until 0xFFFF;

[0044] Decreasing data pattern, where the base data starts from 0xFFFF and changes according to the address decreasing pattern until 0x0000.

[0045] The baseline data corresponding to the selected test mode is automatically stored in the local database after the host computer is configured, and serves as the comparison benchmark for subsequent real-time data reading.

[0046] (2) Memory operating parameter configuration

[0047] Users can set the operating frequency of the memory, covering common test conditions (e.g., continuously adjustable from 100MHz to 2000MHz).

[0048] The cumulative number of full address reads can be set (e.g., configurable from 100 to 10,000 times) to control the read depth and total exposure time of the test.

[0049] (3) Irradiation-related parameter configuration

[0050] Users can specify the types of single-particle radiation to be collected synchronously during this test, including but not limited to protons, heavy ions, and gamma rays. This parameter is matched with the communication protocol of the irradiation equipment to ensure that the irradiation parameters collected by the lower-level machine are consistent with the actual irradiation conditions, and to facilitate subsequent multi-factor correlation analysis.

[0051] After the user confirms the above configuration items, they are sent to the lower-level machine through the communication interface as control instructions for test execution and data processing benchmarks, thereby realizing the controllability and repeatability of test conditions and the flexible expansion of analysis dimensions.

[0052] After receiving raw data from the slave device, the host computer constructs multi-dimensional intelligent charts based on the logic of "benchmark comparison - data classification and statistics - multi-factor correlation - visualization rendering". These multi-dimensional intelligent charts support combined correlation analysis of radiation type, dose, time, operating frequency, and test mode. The multi-dimensional intelligent charts generated by the system do not simply display a single factor independently, but simultaneously incorporate multiple key influencing factors such as radiation type (e.g., protons, heavy ions, gamma rays), irradiation dose, irradiation time, operating frequency, and test mode (i.e., the benchmark data pattern written to the memory). The system also comprehensively analyzes the interactions and synergistic effects between these factors. Through this combined correlation analysis, users can intuitively observe and reveal the influence of different factors, whether acting individually or in combination, on the single-event flip characteristics of the memory. Examples include differences in flip distribution caused by different radiation types at the same dose, the modulation effect of test modes on the sensitivity of the data port at different operating frequencies, or a comparison of the cumulative flip trend between long-term low-dose irradiation and short-term high-dose irradiation. This provides more comprehensive and in-depth data support and decision-making basis for optimizing the radiation resistance design of the memory.

[0053] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution heatmap. The generation of the irradiation error distribution heatmap includes: splitting the collected error addresses into high-order address segments and low-order address segments, which correspond to the row coordinates and column coordinates of the heatmap, respectively, and establishing a two-dimensional address matrix; accumulating and counting the number of flips that occur at each address location during the test, and associating it with the corresponding irradiation dose or irradiation time information.

[0054] Specifically, the irradiation error distribution heatmap is used to realize a three-dimensional visual mapping between error address, cumulative flip count and irradiation dose. Its data sources include error addresses collected by the lower-level machine (corresponding to the full address space of the memory), cumulative flip count of each address position and associated real-time irradiation dose information.

[0055] To construct the heatmap, the erroneous addresses are first mapped: the high-order bits of the erroneous address are mapped to row coordinates of the heatmap matrix, and the low-order bits are mapped to column coordinates, thus establishing a two-dimensional address matrix. The size of this matrix is ​​determined by the memory address width. For example, for a 24-bit address, the high 12 bits can be used as row indices and the low 12 bits as column indices, forming a two-dimensional grid structure.

[0056] In terms of quantized rendering rules, an address matrix is ​​used as the basis, with two dimensions—cumulative flip count and irradiation dose—overlaid for visualization. The cumulative flip count is characterized by color depth or color gradient; the higher the flip count, the darker or more prominent the color. Irradiation dose is distinguished by color transparency, brightness, or auxiliary hue; the higher the dose, the stronger the visual salience of the corresponding area. Specifically: 0 flips are displayed as white, 1 to 5 flips as light red, 6 to 10 flips as dark red, and more than 10 flips as purplish-red. Irradiation dose is further distinguished by color transparency; the higher the dose value, the lower the color transparency of the corresponding area.

[0057] The specific steps for generating a heatmap include:

[0058] (1) Establish a data table relating error address, cumulative number of flips and irradiation dose, and segment the data according to the irradiation dose value, for example, divide the data into segments every 0.1 Gy dose interval;

[0059] (2) For each dose data segment, count the cumulative number of flips of each address position within that segment;

[0060] (3) Based on the statistical results, a suitable interpolation algorithm is used to fill the two-dimensional address matrix with color to generate a heat map image of the corresponding dose range;

[0061] (4) Users can switch between displaying the corresponding heat map view by different dose segments or dose ranges through the interactive interface, so as to dynamically observe the change law of the flip distribution with the accumulation of dose.

[0062] (5) When the user hovers the pointer or selects any address in the matrix, the system displays the complete address information, cumulative number of flips and corresponding irradiation dose value in real time, which facilitates refined analysis and data traceability.

[0063] In the above manner, the irradiation error distribution heatmap can intuitively reflect the distribution characteristics of single-particle flips in the address space and their correlation with irradiation dose, providing an effective visualization tool for identifying potential sensitive address regions and dose-dependent flip patterns.

[0064] As an implementable approach, the multi-dimensional intelligent chart includes an address hotspot map, the generation of which includes: obtaining erroneous addresses and dividing pages into pages based on a preset number of consecutive addresses; calculating the flip density of each page based on the cumulative number of reads, the number of addresses within the page, and the cumulative number of flips within the page; and marking pages with a flip density greater than or equal to a preset threshold as hotspot pages.

[0065] Specifically, the address hotspot map is used to analyze the page-level distribution characteristics and flip density of single-event flips in the memory address space. Its data sources include 24-bit error addresses collected by the lower-level machine, the cumulative number of flips at the corresponding addresses, and the cumulative number of full address reads configured by the upper-level machine.

[0066] The page partitioning rule is as follows: 1024 consecutive addresses are used as one page, and the 24-bit address space is divided into a total of 65536 pages, with the page number range from 0x0000 to 0xFFFF.

[0067] The quantitative indicator is defined as the flipping density, and the calculation formula is as follows:

[0068] Flip density = (cumulative flip count within the page) / (cumulative read count × number of addresses within the page) × 100%.

[0069] The specific implementation steps include:

[0070] (1) Group all the collected error addresses according to the page number and count the cumulative number of flips in each page;

[0071] (2) Based on the cumulative number of reads configured by the host computer, calculate the flip density value for each page according to the flip density calculation formula above;

[0072] (3) Construct a bar chart with page number as the horizontal axis and flip density as the vertical axis; in this bar chart, pages with a flip density greater than or equal to 5% are marked as hot pages and highlighted in red.

[0073] (4) Supports segmented processing based on irradiation time. For example, each minute is a time period, and corresponding heat maps are generated for the erroneous data in each time period, thus forming a dynamic heat map to show the trend of the hot page evolving with irradiation time.

[0074] In this way, the address hotspot map can clearly reflect the relative probability differences of single-event flips in different address pages of the memory, highlight hotspot areas with high flip density, and support dynamic tracking analysis in the time dimension, which helps to identify potential address-sensitive areas and their changes with the irradiation process.

[0075] As an implementable approach, the multi-dimensional intelligent chart includes a flipped bit distribution statistical chart, the generation of which includes: obtaining a flipped bit mask by bitwise XORing the erroneous data with the baseline data; calculating the cumulative flipped number of each data port during the test period based on the flipped bit mask; the flipping includes flipping from 0 to 1 and flipping from 1 to 0; sorting the data ports according to the cumulative flipped number and marking the data ports with higher irradiation sensitivity.

[0076] Specifically, the flip bit distribution statistics map is used to accurately quantify and analyze the irradiation sensitivity of each data port (DQ0 to DQ15) of the memory, and further distinguish the directional characteristics of the flip state.

[0077] The data sources include 16-bit error data collected by the lower-level machine, the baseline value corresponding to the test mode configured by the upper-level machine, and the toggle record associated with the error address.

[0078] The quantitative analysis dimensions mainly include two aspects:

[0079] (1) Cumulative number of flips: Count the total number of flips that occurred in each data port (DQ0 to DQ15) during the entire test period (regardless of the flip direction, i.e., whether it is from 0 to 1 or from 1 to 0, it is counted in the cumulative count).

[0080] (2) Distribution of flip state: The number of flips from "0 to 1" and "1 to 0" for each data port were counted to reveal the differences in flip bias of different data ports under irradiation conditions.

[0081] The specific implementation steps are as follows:

[0082] First, perform a bitwise XOR operation on the 16-bit error data corresponding to each error address and the pre-written base value to obtain a flipped bit mask, where a bit in the mask being 1 indicates that the corresponding data bit has been flipped;

[0083] Secondly, based on the obtained flipped bit mask, the cumulative flip count of each data bit from DQ0 to DQ15 is counted.

[0084] The third step is to further distinguish the flip direction by comparing the original bit state of the erroneous data with that of the reference value: when the reference bit value is 0 and the erroneous bit value is 1, it is recorded as "0→1" flip; when the reference bit value is 1 and the erroneous bit value is 0, it is recorded as "1→0" flip; the number of flips for each data port is accumulated for each of the two types.

[0085] Finally, using the data port numbers (DQ0 to DQ15) as the horizontal axis, two types of charts were constructed respectively:

[0086] "Cumulative Flip Count Bar Chart": Displays the total flip count for each data port, sorted from highest to lowest by cumulative flip count;

[0087] "Flip State Distribution Stacked Chart": Displays the number of "0→1" flips and the number of "1→0" flips for each data port simultaneously in a stacked bar chart format;

[0088] In the above chart, the system automatically labels the data port with the most cumulative flips as the most sensitive data port, and the data port with the fewest cumulative flips as the least sensitive data port.

[0089] Through the above implementation method, the flip-bit distribution statistics chart can clearly and intuitively quantify and compare the sensitivity of each data port under irradiation environment and its flip-bit direction characteristics, providing a direct and reliable basis for targeted strengthening of radiation protection measures for sensitive data ports in memory circuit design.

[0090] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and an irradiation dose correlation curve. The generation of the irradiation error distribution and irradiation dose correlation curve includes: generating a corresponding correlation curve with irradiation dose as the horizontal axis and at least one of the cumulative flip count, data port flip count, and / or address flip distribution as the vertical axis; performing a linear fitting or polynomial fitting algorithm on the correlation curve, calculating the correlation coefficient of each curve, and the correlation coefficient quantifies the correlation strength between irradiation dose and flip count.

[0091] Specifically, the irradiation error distribution and irradiation dose correlation curve are used to analyze the influence of irradiation dose on the single-event flip characteristics of memory and its correlation with multiple variables. The data sources include: cumulative flip times by address, by data port (DQ port) and overall, real-time irradiation dose value, test mode type configured by host computer and memory operating frequency.

[0092] The logic for controlling variables is as follows: under the premise of fixed memory operating frequency and test mode type, focus on examining the impact of a single variable, irradiation dose, on the number of flips, so as to achieve a clear quantification of the dose-response relationship.

[0093] The specific implementation steps include:

[0094] (1) Divide the collected data into intervals according to the preset irradiation dose interval (e.g., each 0.5 Gy is a data segment);

[0095] (2) For each dose interval, the total cumulative number of flips within that interval, the total number of flips for each data port (DQ port), and the total number of flips for the hotspot page are counted separately;

[0096] (3) Using the irradiation dose as the horizontal axis, select the total cumulative number of flips, the cumulative number of flips of sensitive data ports (such as DQ3), and the cumulative number of flips of hot pages as the vertical axis to construct multiple comparison curves;

[0097] (4) The above curves are fitted using a linear fitting algorithm or a polynomial fitting algorithm, and the correlation coefficient (R² value) of each curve is calculated. The magnitude of the R² value is used to quantify the correlation strength between the irradiation dose and the number of flips. The closer the R² value is to 1, the more significant the linear or polynomial correlation between the dose and the number of flips.

[0098] (5) Supports users to switch test mode type or memory operating frequency parameters and regenerate correlation curves under different variable combinations, thereby enabling comparative analysis of the influence of test mode or operating frequency on dose-flip relationship.

[0099] Through the above implementation method, the correlation curve can clearly show the independent influence of irradiation dose on overall flipping, specific data port flipping, and hotspot address region flipping. At the same time, through multi-curve comparison and fitting parameter quantification, it reveals the modulation effect of other variables such as operating frequency or test mode on dose dependence, providing a quantitative analysis basis for the evaluation and optimization of memory anti-single-event performance under different irradiation conditions.

[0100] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve between the test modes. The generation of this correlation curve involves: under fixed irradiation dose, irradiation time, and memory operating frequency, performing tests and collecting flip-over data for each test mode; statistically analyzing the overall cumulative flip-over count of the memory, the cumulative flip-over count of each data port, and / or the flip-over status of hotspot address regions under each test mode; plotting a comparison chart with the test mode on the x-axis and the flip-over count or flip-over characteristic index on the y-axis; marking the test mode with the fewest flip-over counts or the most uniform flip-over distribution as the superior mode, and / or marking the test mode with the most flip-over counts or the most uneven distribution as the poor mode.

[0101] Specifically, the irradiation error distribution and test mode correlation curves are used to evaluate the impact of different test modes on the single-event flip characteristics of the memory. The data sources include: the total cumulative number of flips, the flip state distribution of each data port (DQ port), and the address flip distribution, all obtained under different test modes. The test modes specifically include, but are not limited to, fixed value modes (0x0000, 0x5555, 0xAAAA, 0xFFFF), incrementing data modes, and decrementing data modes.

[0102] The logic of the control variables is as follows: under the premise of fixed irradiation dose, memory operating frequency and irradiation time, we focus on examining the independent impact of a single variable of the test mode on the flip characteristics, so as to achieve comparative analysis of the flip performance between different modes.

[0103] The specific implementation steps include:

[0104] (1) Perform tests for each test mode and collect corresponding data, and count the total number of flips, the total number of flips for each data port, and the number of hot pages under that mode;

[0105] (2) Using the test mode type as the horizontal axis, select the total cumulative number of flips, the number of hot pages, and the cumulative number of flips of sensitive data ports as the vertical axis to construct the corresponding bar charts;

[0106] (3) For each test mode, its "flipping uniformity" index is further calculated using the following formula:

[0107] Flip uniformity = (maximum cumulative flip count in each data port - minimum cumulative flip count in each data port) / average cumulative flip count in all data ports;

[0108] This metric is used to quantify the impact of the test mode on the uniformity of the flip distribution of each data port. The smaller the flip uniformity value, the more uniform the flip distribution.

[0109] (4) Based on the statistical results and the flipping uniformity index, mark the best test mode (i.e. the mode with the fewest overall flips and the highest flipping uniformity) and the worst test mode (i.e. the mode with the most overall flips and the lowest flipping uniformity) in the chart.

[0110] Through the above implementation method, the correlation curve can intuitively compare the differences in the total amount of flips, hot spot occurrence, and data port flip distribution of different test modes under the same irradiation conditions. It also provides a quantitative evaluation basis through the flip uniformity index, thereby providing scientific guidance and data support for selecting test modes or benchmark data patterns with better radiation resistance.

[0111] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve between the irradiation error distribution and the operating frequency. The generation of the correlation curve between the irradiation error distribution and the operating frequency includes: grouping the collected error data according to a preset operating frequency gradient under fixed irradiation dose, test mode, and irradiation time conditions; calculating the total cumulative number of flips for each operating frequency group, the number of flips for hotspot address regions, and / or the number of flips for each data port; plotting a line curve with the operating frequency as the horizontal axis and the number of flips as the vertical axis, and marking the frequency points where the flip characteristics change abruptly or abnormally.

[0112] Specifically, the correlation curve between irradiation error distribution and operating frequency is used to examine the dynamic influence and law of memory operating frequency on single-event flip characteristics. The data sources include: the cumulative number of flips, the number of flips of each data port (DQ port), the address flip distribution, and the associated irradiation dose information obtained under different operating frequency conditions.

[0113] The logic of the control variables is as follows: under the premise of fixed irradiation dose, test mode and irradiation time, we focus on analyzing the influence of the single variable of working frequency on the number of flips, so as to reveal the independent action law of frequency change on single-event flip effect.

[0114] The specific implementation steps include:

[0115] (1) Group the collected data according to the preset working frequency gradient, for example, using typical frequency points such as 200MHz, 400MHz, 800MHz, and 1600MHz as the grouping basis;

[0116] (2) For each frequency group, the total cumulative number of page flips, the total number of page flips of hot pages, and the number of page flips of each data port are counted separately for that frequency.

[0117] (3) Construct a line chart with the working frequency as the horizontal axis and the number of flips (including the total cumulative number of flips, the number of flips of hot pages, or the number of flips of each data port) as the vertical axis;

[0118] (4) Mark the frequency nodes in the line graph where the number of flips changes significantly or abnormally to highlight the frequency-sensitive threshold or inflection point;

[0119] (5) Based on the recommended operating frequency range given in the product manual of the memory under test, compare and analyze the change law and trend of the number of flip-flops when the operating frequency exceeds the recommended range, such as whether the number of flip-flops increases sharply, grows non-linearly, or saturates.

[0120] (6) Based on the above analysis results, data and reference suggestions are provided for the selection of the operating frequency of memory in practical application scenarios, so as to optimize the reliability and single-event resistance of the system under irradiation environment.

[0121] Through the above implementation, the correlation curve can intuitively present the dynamic correlation between the operating frequency and the total number of single-event flips, hotspot address regions, and data port flip characteristics. By comparing it with the recommended frequency range, it reveals the potential reliability risks when the frequency exceeds the limit, providing quantitative guidance and decision support for memory circuit design, clock strategy optimization, and system-level radiation hardening.

[0122] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and time-dependent curve. The generation of the irradiation error distribution and time-dependent curve includes: collecting or statistically analyzing flip count data at preset time intervals under conditions of fixed irradiation dose rate, memory operating frequency, and test pattern; calculating the number of new single-particle flips within each time interval, the cumulative number of flips at the end of that time interval, and the corresponding real-time or cumulative irradiation dose; plotting a curve with test time as the horizontal axis and the number of new flips and / or cumulative flips as the vertical axis, and overlaying a reference curve showing the change in irradiation dose over time; and marking or highlighting time periods where the rate of increase in the number of flips changes significantly.

[0123] Specifically, the irradiation error distribution and time correlation curve are used to track the changing trend of single-particle flip characteristics with irradiation time and its synergistic relationship with dose changes. The data sources include: the cumulative number of flips collected at preset time intervals, real-time irradiation dose values, and corresponding error address distribution information.

[0124] The logic of the control variables is as follows: under the premise of fixed irradiation dose rate, memory operating frequency and test mode, we focus on examining the impact of the single variable of irradiation time on the number of flips, so as to reveal the temporal evolution law and time-dependent characteristics of the flip process.

[0125] The specific implementation steps include:

[0126] (1) Based on the test start time (horizontal axis range, for example, 0 to 600 seconds), record and count the number of new flips in each time interval, the cumulative number of flips at the end of the time point, and the current irradiation dose value in real time according to the preset time interval (for example, every 10 seconds is a collection point);

[0127] (2) Construct two types of core charts:

[0128] The "Cumulative Flips - Time" line chart is used to show the overall trend of the total number of flips over time.

[0129] The "Number of Flips - Time" bar chart is used to reflect the intensity of flip events within each time period.

[0130] Meanwhile, a reference curve showing the change of irradiation dose over time (which can be represented by a secondary axis or different colored lines on the same axis) is superimposed on the above chart to visually compare the correspondence between the number of flips and the dose change.

[0131] (3) By using algorithms or thresholds, the time intervals in which the number of flips increases rapidly are automatically identified, and the characteristics of the change in irradiation dose within the time interval are analyzed in relation to reveal the synergistic influence between "dose-time-number of flips", such as whether there is a phenomenon that the flip rate accelerates significantly after the dose accumulation reaches a certain critical point.

[0132] (4) Supports splitting data by address region (such as hot page) or by data port (DQ port) to generate corresponding local cumulative flip count-time curve or new flip count-time curve to show the flip trend differences and local sensitivity characteristics of different address regions or different data ports.

[0133] Through the above implementation, the time correlation curve can dynamically and in real time present the evolution of single-particle flip with irradiation time and its coupling effect with dose change, supporting multi-level trend analysis of global and local conditions. It provides an effective visualization tool and quantitative basis for evaluating the cumulative damage law of memory under long-term irradiation environment, predicting potential failure time window, and optimizing irradiation tolerance design.

[0134] The multi-dimensional intelligent charts provided by this invention all support combined correlation analysis of any dimension, and their core analysis logic is as follows:

[0135] By fixing two variables—single particle type and irradiation dose—and simultaneously varying two variables—operating frequency and test mode—this study analyzes the synergistic influence of operating frequency and test mode on the irradiation sensitivity characteristics of each data port (DQ port). Specifically, under the same single particle type and cumulative dose conditions, by comparing indicators such as the cumulative number of DQ port flips, flip state distribution, and flip uniformity under different combinations of operating frequencies and test modes, the interaction and modulation effect of the two variables on the data port sensitivity are revealed.

[0136] By fixing two variables—operating frequency and test mode—and simultaneously varying two variables—single-particle type and irradiation time—the differences in flipping trends under different single-particle types were analyzed. Specifically, under the same operating frequency and test mode, by comparing the cumulative number of flips, the number of new flips, the evolution of flipping hotspots, and the dose accumulation curves of different single-particle types (such as protons, heavy ions, and gamma rays) on the irradiation time axis, the unique influence of different radiation particles on the single-particle flipping process of the memory and its time-dependent characteristics were revealed.

[0137] All seven types of charts mentioned above support complete data backtracking functionality. Users can directly view and display the original error information corresponding to any data point in the chart (including heatmap grid cells, bar / line chart data points, hotspot markers, etc.) by clicking or selecting it. This information includes, but is not limited to: the specific timestamp of the flip, the radiation dose value at that time, the complete error address, the error data content, the baseline comparison results, and the corresponding test configuration parameters, thereby enabling traceable analysis from the visualized charts to the original collected data.

[0138] The above-mentioned multi-factor correlation analysis logic, by combining the control variable method with combinatorial analysis, breaks through the limitations of traditional single-factor analysis. It can systematically and comprehensively explore the independent, interactive, and synergistic effects of five key factors—radiation single particle type, dose, time, operating frequency, and test mode—on the single-event flip characteristics of memory. This provides a scientific and reliable quantitative basis for the precise optimization of memory radiation resistance, the formulation of sensitive data port protection strategies, and reliability assessment.

[0139] Figure 2 This application provides a flowchart of a memory single-event irradiation testing method based on multi-dimensional intelligent chart analysis, which can be implemented by... Figure 1 The system execution is as shown. (As shown in the image) Figure 2 As shown, the method may include the following steps:

[0140] Step 201: Configure the test mode, memory operating parameters, and irradiation-related parameters.

[0141] Step 202: Write the baseline data determined according to the test mode to the full address of the memory.

[0142] Step 203: During the irradiation process, read the full address data of the memory in real time, compare it with the reference data to capture the error address and error data of single particle flip, and simultaneously collect the real-time irradiation parameters output by the irradiation equipment.

[0143] Step 204: Package the error address, error data, real-time irradiation parameters, and test configuration parameters into raw data.

[0144] Step 205: Receive the raw data and generate a multi-dimensional intelligent chart based on the raw data. The multi-dimensional intelligent chart supports combined correlation analysis of radiation type, dose, time, working frequency, and test mode.

[0145] First, the test mode, memory operating parameters, and irradiation correlation parameters are configured via the host computer to set the baseline and control variables for the entire testing process. The test mode determines the baseline data pattern written to the memory, directly affecting the manifestation of flip sensitivity. The memory operating parameters mainly include the operating frequency and the number of read cycles, used to simulate the working state under actual application scenarios. The irradiation correlation parameters specify information such as the type of radiation that needs to be collected synchronously, ensuring that subsequent analysis corresponds one-to-one with actual irradiation conditions. These configuration items determine the repeatability of the test and the controllability of the variables, which is the foundation for realizing multi-factor correlation analysis.

[0146] Next, the lower-level computer writes reference data into the full address space of the memory according to the configuration, and reads the full address data in real time at a set frequency after irradiation begins. By comparing the read data bit by bit with the pre-written reference data, any flip events caused by single-event effects are immediately captured, and the specific error address and corresponding error data of the flip are recorded. At the same time, the lower-level computer maintains synchronous communication with the irradiation equipment, and collects and records key parameters during the irradiation process in real time, such as radiation type and cumulative dose. These operations ensure the spatiotemporal correspondence between flip events and irradiation conditions, providing high-fidelity raw data for subsequent analysis.

[0147] The collected error addresses, error data, real-time irradiation parameters, and test configuration parameters are packaged according to a unified data frame format to form structured raw data packets, which are then sent to the host computer in real time. This packaging mechanism not only ensures the integrity and reliability of data transmission but also retains all necessary context information, enabling the host computer to accurately reconstruct the background of each flip event.

[0148] After receiving the raw data, the host computer systematically processes and statistically analyzes it, ultimately generating multi-dimensional intelligent charts. These charts are not single-dimensional displays, but support arbitrary combinations and correlation analyses of multiple key factors such as radiation type, irradiation dose, irradiation time, memory operating frequency, and test mode. Through this multi-factor cross-analysis capability, the system can reveal the independent influence, interaction, and synergistic effects between different variables. For example, it can reveal the differences in the flip bias of different radiation types on a specific data port under the same dose, the modulation effect of test modes on flip uniformity at different operating frequencies, or the comparative patterns of the cumulative flip trend between long-term low-dose irradiation and short-term high-dose irradiation.

[0149] The overall technical feature of this method is that it not only achieves real-time flip-over capture and multi-parameter synchronous acquisition across the entire address range, but also breaks through the limitations of single-factor analysis in traditional testing through the combined correlation analysis of multi-dimensional intelligent charts. It provides comprehensive, in-depth, and visualized data support and technical means for the optimized design of memory resistance to single-particle irradiation, sensitive bit identification and targeted protection, and reliability assessment.

[0150] As one feasible approach, the test mode includes at least one of: fixed value mode, incremental data mode, and decrementing data mode, wherein the reference data is determined by the host computer according to the configured test mode.

[0151] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution heatmap. The generation of the irradiation error distribution heatmap includes: splitting the collected error addresses into high-order address segments and low-order address segments, which correspond to the row coordinates and column coordinates of the heatmap, respectively, and establishing a two-dimensional address matrix; accumulating and counting the number of flips that occur at each address location during the test, and associating it with the corresponding irradiation dose or irradiation time information.

[0152] As an implementable approach, the multi-dimensional intelligent chart includes an address hotspot map, the generation of which includes: obtaining erroneous addresses and dividing pages into pages based on a preset number of consecutive addresses; calculating the flip density of each page based on the cumulative number of reads, the number of addresses within the page, and the cumulative number of flips within the page; and marking pages with a flip density greater than or equal to a preset threshold as hotspot pages.

[0153] As an implementable approach, the multi-dimensional intelligent chart includes a flipped bit distribution statistical chart, the generation of which includes: obtaining a flipped bit mask by bitwise XORing the erroneous data with the baseline data; calculating the cumulative flipped number of each data port during the test period based on the flipped bit mask; the flipping includes flipping from 0 to 1 and flipping from 1 to 0; sorting the data ports according to the cumulative flipped number and marking the data ports with higher irradiation sensitivity.

[0154] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and an irradiation dose correlation curve. The generation of the irradiation error distribution and irradiation dose correlation curve includes: generating a corresponding correlation curve with irradiation dose as the horizontal axis and at least one of the cumulative flip count, data port flip count, and / or address flip distribution as the vertical axis; performing a linear fitting or polynomial fitting algorithm on the correlation curve, calculating the correlation coefficient of each curve, and the correlation coefficient quantifies the correlation strength between irradiation dose and flip count.

[0155] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve between the test modes. The generation of this correlation curve involves: under fixed irradiation dose, irradiation time, and memory operating frequency, performing tests and collecting flip-over data for each test mode; statistically analyzing the overall cumulative flip-over count of the memory, the cumulative flip-over count of each data port, and / or the flip-over status of hotspot address regions under each test mode; plotting a comparison chart with the test mode on the x-axis and the flip-over count or flip-over characteristic index on the y-axis; marking the test mode with the fewest flip-over counts or the most uniform flip-over distribution as the superior mode, and / or marking the test mode with the most flip-over counts or the most uneven distribution as the poor mode.

[0156] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve between the irradiation error distribution and the operating frequency. The generation of the correlation curve between the irradiation error distribution and the operating frequency includes: grouping the collected error data according to a preset operating frequency gradient under fixed irradiation dose, test mode, and irradiation time conditions; calculating the total cumulative number of flips for each operating frequency group, the number of flips for hotspot address regions, and / or the number of flips for each data port; plotting a line curve with the operating frequency as the horizontal axis and the number of flips as the vertical axis, and marking the frequency points where the flip characteristics change abruptly or abnormally.

[0157] As an implementable approach, the multi-dimensional intelligent chart includes an irradiation error distribution and time-dependent curve. The generation of the irradiation error distribution and time-dependent curve includes: collecting or statistically analyzing flip count data at preset time intervals under conditions of fixed irradiation dose rate, memory operating frequency, and test pattern; calculating the number of new single-particle flips within each time interval, the cumulative number of flips at the end of that time interval, and the corresponding real-time or cumulative irradiation dose; plotting a curve with test time as the horizontal axis and the number of new flips and / or cumulative flips as the vertical axis, and overlaying a reference curve showing the change in irradiation dose over time; and marking or highlighting time periods where the rate of increase in the number of flips changes significantly.

[0158] The systems and methods provided in the embodiments of this application have the following beneficial effects:

[0159] (1) A precise quantitative analysis of the radiation sensitivity characteristics of memory data ports was achieved. Through bit-by-bit comparison of erroneous data with reference values ​​and multi-dimensional statistical processing, a quantitative assessment of the radiation sensitivity of each data port from DQ0 to DQ15 was achieved for the first time. The cumulative number of flips and the distribution characteristics of "0→1" and "1→0" flip states for each data port can be clearly given. This quantitative result provides a direct and reliable basis for memory circuit design optimization. In particular, for data ports with high radiation sensitivity, it can guide the implementation of targeted enhanced protection measures, such as increasing redundancy design, local shielding, or adjusting wiring strategies, thereby effectively improving the overall resistance to single-event upsets.

[0160] (2) Significantly enhanced multi-factor correlation analysis capabilities. This invention organically correlates five key factors: single-particle type, irradiation dose, irradiation time, memory operating frequency, and test mode. Through a rigorous controlled variable method and flexible combination analysis, it systematically reveals the independent influence of each factor on single-particle flip characteristics and their synergistic effects. This method effectively overcomes the limitations of "single-factor isolated analysis" commonly found in traditional single-particle irradiation tests, enabling researchers to more comprehensively and accurately understand the complex causes of flip characteristics, and providing solid data support for the mechanism research and optimization design of memory radiation resistance performance.

[0161] (3) Significantly improved the visualization and intuitiveness of data analysis. Various multi-dimensional intelligent charts are designed for actual memory scenarios with specific address widths (24 bits) and data bit widths (16 bits). They employ various visualization forms such as heatmaps, address hotspot maps, flip bit distribution statistics, dose correlation curves, test mode correlation curves, operating frequency correlation curves, and time correlation curves to intuitively present the address space distribution of flip errors, the evolution of hotspot areas, data port sensitivity differences, and dynamic trends under the influence of various factors. Users can quickly obtain key insights without performing tedious manual calculations or data conversions, significantly reducing the analysis threshold and improving the efficiency of test data interpretation and engineering application value.

[0162] (4) It possesses extremely strong data traceability and result verifiability. This invention establishes a one-to-one correspondence between the benchmark value, original error data, real-time irradiation parameters, and the final generated chart data corresponding to the test mode. All charts support interactive data backtracking functions. Users can directly view and display complete information such as the original error address, error data, benchmark value comparison results, occurrence time, irradiation dose, and test configuration parameters corresponding to any chart data point by clicking or selecting it. This ensures the accuracy, transparency, and repeatability of the analysis conclusions, effectively meeting the stringent requirements for the integrity and auditability of test data in high-reliability fields.

[0163] (5) It has good versatility and adaptability. The design of this system and method fully considers the diversity of memory and supports various memory devices with different address widths and data bit widths. By flexibly configuring the types of test modes, operating frequency ranges and other test parameters, it can be adapted to various memory types such as DDR, SRAM, and DRAM. It is suitable for application scenarios with extremely high requirements for radiation reliability, such as aerospace, nuclear industry, satellite communication, and high-energy physics experiments, and provides a general technical solution for radiation resistance performance evaluation and optimization in different engineering projects.

[0164] The foregoing has described specific embodiments of this specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired result. In some embodiments, multitasking and parallel processing are possible or may be advantageous.

[0165] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments. The system embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. Components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without creative effort.

[0166] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, use and processing of the relevant data must comply with the relevant laws, regulations and standards of the relevant countries and regions, and corresponding operation entry points are provided for users to choose to authorize or refuse.

[0167] In addition, embodiments of this application also provide a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the steps of the method described in any of the foregoing method embodiments.

[0168] And an electronic device comprising: one or more processors; and a memory associated with the one or more processors, the memory being used to store program instructions that, when read and executed by the one or more processors, perform the steps of the method described in any of the foregoing method embodiments.

[0169] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the method described in any of the foregoing method embodiments.

[0170] As can be seen from the above description of the embodiments, those skilled in the art can clearly understand that this application can be implemented by means of software plus necessary general-purpose hardware platforms. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a computer program product. This computer program product can be stored in a storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in various embodiments or some parts of the embodiments of this application.

[0171] The technical solutions provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A memory single event effects test system based on multi-dimensional intelligent graph analysis, characterized in that, The system includes: Lower-level data acquisition module and upper-level multi-dimensional intelligent analysis platform; The lower-level data acquisition module is used to connect to the memory and irradiation equipment, write reference data to the full address of the memory according to the test mode configured by the upper-level computer, read the full address data of the memory in real time during the irradiation process, compare it with the reference data to capture the error address and error data of single particle flip, and synchronously acquire the real-time irradiation parameters output by the irradiation equipment. The error address, error data, real-time irradiation parameters and test configuration parameters are packaged into raw data and sent to the upper-level computer. The host computer multi-dimensional intelligent analysis platform is used to configure test modes, memory operating parameters and irradiation correlation parameters, receive raw data sent by the slave computer, and generate multi-dimensional intelligent charts based on the raw data. The multi-dimensional intelligent charts support combined correlation analysis of radiation type, dose, time, operating frequency and test mode.

2. The system of claim 1, wherein, The test modes include at least one of the following: fixed value mode, incremental data mode, and decrementing data mode, and the benchmark data is determined by the host computer according to the configured test mode.

3. The system of claim 1, wherein, The multi-dimensional intelligent chart includes an irradiation error distribution heatmap, the generation of which includes: The collected error addresses are split into high-order address segments and low-order address segments, which correspond to the row coordinates and column coordinates of the heatmap, respectively, to establish a two-dimensional address matrix; The number of flips that occurred at each address location during the test is accumulated and statistically analyzed, and then associated with the corresponding irradiation dose or irradiation time information.

4. The system of claim 1, wherein, The multi-dimensional smart chart includes an address hotspot map, and the generation of the address hotspot map includes: Obtain the erroneous address and divide the page into pages with a preset number of consecutive addresses; Calculate the flip density per page based on the cumulative number of reads, the number of addresses within the page, and the cumulative number of page flips. Pages with a flipping density greater than or equal to a preset threshold are marked as hot pages.

5. The system of claim 1, wherein, The multi-dimensional smart chart includes a flipped position distribution statistical chart, the generation of which includes: The flipped bitmask is obtained by XORing the erroneous data with the reference data bit by bit. Based on the flipped bitmask, the cumulative number of flips for each data port during the test period is counted; the flips include 0 to 1 flips and 1 to 0 flips. The data ports are sorted according to the cumulative number of flips, and the data ports with higher irradiation sensitivity are marked.

6. The system according to claim 1, characterized in that, The multi-dimensional intelligent chart includes irradiation error distribution and irradiation dose correlation curves. The generation of the irradiation error distribution and irradiation dose correlation curves includes: With the irradiation dose as the horizontal axis and at least one of the cumulative number of flips, the number of data port flips, and / or the address flip distribution as the vertical axis, a corresponding correlation curve is generated. The correlation curves are fitted using linear or polynomial fitting algorithms, and the correlation coefficients of each curve are calculated. The correlation coefficients quantify the strength of the correlation between the irradiation dose and the number of flips.

7. The system according to claim 1, characterized in that, The multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve for test modes. The generation of the irradiation error distribution and the correlation curve for test modes includes: Under the conditions of fixed irradiation dose, irradiation time, and memory operating frequency, tests were performed for each test mode and data was collected for each flip. The total number of memory flips, the total number of flips for each data port, and / or the flipping of hot address regions are counted separately under each test mode. A comparison chart is drawn with the test mode as the horizontal axis and the number of flips or flip characteristic indicators as the vertical axis. The test mode marked with the fewest flips or the most even flip distribution is the better mode, and / or the test mode marked with the most flips or the most uneven distribution is the worse mode.

8. The system according to claim 1, characterized in that, The multi-dimensional intelligent chart includes an irradiation error distribution and a correlation curve between the operating frequency and the irradiation error distribution. The generation of this correlation curve includes: Under fixed irradiation dose, test mode and irradiation time conditions, the collected erroneous data are grouped according to the preset working frequency gradient; The total number of flips for each working frequency group, the number of flips for hotspot address regions, and / or the number of flips for each data port are counted separately. Plot a line curve with the operating frequency as the horizontal axis and the number of flips as the vertical axis, and mark the frequency points where the flipping characteristics change abruptly or abnormally.

9. The system according to claim 1, characterized in that, The multi-dimensional intelligent chart includes an irradiation error distribution and a time-dependent curve. The generation of the irradiation error distribution and the time-dependent curve includes: Under the conditions of fixed irradiation dose rate, memory operating frequency and test pattern, the flip data is collected or statistically analyzed at preset time intervals. Calculate the number of new single-particle flips within each time interval, the cumulative number of flips at the end of the time interval, and the corresponding real-time or cumulative irradiation dose. Plot a curve with test time on the x-axis and the number of new flips and / or the cumulative number of flips on the y-axis, and overlay a reference curve showing the change of irradiation dose over time. Mark or highlight the time periods in which the rate of increase in the number of flips changes significantly.

10. A single-particle irradiation testing method for memory based on multi-dimensional intelligent chart analysis, characterized in that, The method includes: Configure the test mode, memory operating parameters, and irradiation-related parameters; Write the baseline data determined according to the test mode to the full address of the memory; During the irradiation process, the full address data of the memory is read in real time and compared with the reference data to capture the erroneous address and erroneous data of single particle flip, and the real-time irradiation parameters output by the irradiation equipment are collected simultaneously. The error address, error data, real-time irradiation parameters, and test configuration parameters are packaged into raw data; The system receives the raw data and generates a multi-dimensional intelligent chart based on it. The multi-dimensional intelligent chart supports combined correlation analysis of radiation type, dose, time, operating frequency, and test mode.

Images