A transient total temperature probe based on MEMS micro high-frequency temperature sensing chip

Abstract

This application discloses a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip, which consists of a probe part and a support structure part. The probe part includes: a MEMS temperature chip (1), a flow-guiding shield (2), a signal contact (3), and a ceramic lead cover (4). The MEMS temperature chip (1) is fixedly installed inside the flow-guiding shield (2). The flow-guiding shield (2) covers the MEMS temperature chip (1) and forms a local flow-guiding channel. The signal contact (3) is located at the edge of the MEMS temperature chip (1). One end of the ceramic lead cover (4) is located on one side of the flow-guiding shield (2) and close to the signal contact (3). The support structure part is connected to the other end of the ceramic lead cover (4). The lead wire (5) passes through the support structure part and the ceramic lead cover (4) and is connected to the signal contact (3).

Description

Technical Field

[0001] This application belongs to the field of sensor technology, specifically relating to a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip. Background Technology

[0002] In the internal flow fields of aero-engines, gas turbines, and various turbomachinery, the total temperature parameters often change rapidly with time and spatial location. Especially in the blade wake region, the static-to-dynamic interference region, the shock wave oscillation region, and the local high-gradient flow region, the flow field temperature exhibits significant unsteady characteristics. Accurate acquisition of unsteady total temperature parameters is crucial for loss mechanism analysis, blade profile optimization, flow control, and overall system efficiency improvement.

[0003] Measuring unsteady total temperature is a key issue in turbomachinery and high-temperature aerodynamic testing. Traditional steady-state temperature measurement methods can provide average temperature information, but they are insufficient to reflect transient characteristics such as temperature fluctuations, thermal pulsations, and non-uniform flow structures. For high-speed compressors, turbine-stage flow fields, wake mixing regions, and thermoacoustic coupling environments, the true total temperature often changes over a short timescale. If the temperature sensor itself has insufficient response capability, the output signal will exhibit significant lag, thus affecting subsequent mechanism research and model verification.

[0004] Currently, commonly used total temperature probes are mostly wire thermocouples, sheathed thermocouples, or conventional small resistance temperature detectors (RTDs). Their shortcomings are mainly reflected in the following aspects: First, the sensing element is relatively large in size and has a high heat capacity, resulting in limited transient response speed; second, the probe's frontal area is relatively large, easily causing additional disturbances to the local flow field; third, under the impact of high-speed airflow, the small sensing element is prone to vibration, damage, or additional errors if insufficient support is provided; fourth, some encapsulated structures contain fluid stagnation zones, leading to insufficient local heat transfer and unstable total temperature recovery characteristics.

[0005] With the development of MEMS technology, it has become possible to fabricate temperature sensors at the millimeter level or even smaller. By forming thermocouple or resistance temperature detector (RTD) sensing structures on micro-substrates and introducing microstructures such as vias, bridging beams, thermal insulation grooves, and central temperature-sensing regions, the heat capacity of the temperature-sensing element can be significantly reduced, improving dynamic response capabilities. Meanwhile, MEMS chips also possess advantages such as small size, high integration, and suitability for mass production, providing a new approach for developing transient total temperature probes with high spatial and temporal resolution.

[0006] However, most existing MEMS temperature chips are mainly used for surface temperature measurement, device thermal management, or local static temperature detection. When used directly as total temperature probes, issues such as total temperature recovery under high-speed inflow, fluid turnover, mechanical protection, lead packaging, and engineering adaptation still need to be addressed. Therefore, it is necessary to propose a transient total temperature probe with an integrated design encompassing chip structure, probe current guiding, package support, and lead protection. Summary of the Invention

[0007] The purpose of this application is to address the problems existing in the prior art and to provide a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip.

[0008] To solve the technical problem, the technical solution of this application is: a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip, which consists of a probe part and a support structure part; The probe portion includes: a MEMS temperature chip, a current-guiding shield, a signal contact, and a ceramic lead cover. The MEMS temperature chip is fixedly installed inside the current-guiding shield. The current-guiding shield covers the MEMS temperature chip and forms a local current-guiding channel. The signal contact is located at the edge of the MEMS temperature chip. One end of the ceramic lead cover is located on one side of the current-guiding shield and is close to the signal contact. The support structure is connected to the other end of the ceramic lead cover, and the lead passes through the support structure and the ceramic lead cover to connect to the signal contact.

[0009] Preferably, the flow-guiding shield is a cylindrical shell structure, with a flow-facing area at the front, a limiting step in the middle, and a bottom hole at the rear. The flow-facing area and the bottom hole are connected to form a local flow-guiding channel. The MEMS temperature chip is fixedly mounted on the limiting step, and the ceramic lead cover is set on one side of the flow guide shield and communicates with the flow-facing area. The axis of the flow guide shield is perpendicular to the axis of the ceramic lead cover.

[0010] Preferably, the flow-facing area consists of a local transition section and a central square hole. The local transition section is divided into four parts, which are respectively connected to the four sides of the central square hole. The local transition section is an arc surface or a slope surface.

[0011] Preferably, the included angle between the tangents of the two local transition segments is 120° to 150°.

[0012] Preferably, the flow-guiding shield is also provided with side holes, which are evenly distributed circumferentially in the form of a multi-hole array and are connected to the flow-facing area.

[0013] Preferably, the MEMS temperature chip is a resistance temperature detector (RTD) microstructure. The RTD microstructure has a circular through hole in the center, a circular temperature sensing core area is arranged circumferentially near the circular through hole, and a series of circumferentially radial microstructures are arranged around the circular temperature sensing core area. The circumferentially radial microstructures are tooth-shaped, beam-shaped, or cantilever-shaped. The periphery of the circumferentially radial microstructure is also provided with several through holes or auxiliary openings.

[0014] Preferably, the MEMS temperature chip is a thermocouple-type microstructure. A circular through hole is also provided in the center of the thermocouple-type microstructure. Four bridged thermocouples are arranged around the circular through hole. The temperature sensing area of ​​the thermocouple is close to the circular through hole. The two ends of the thermocouple are connected to the signal contacts on the edge of the MEMS temperature chip through the bridged microstructure. The signal contacts are connected to the leads. The thermocouple is made of Pt and PtRh materials.

[0015] Preferably, when the MEMS temperature chip is a resistance temperature detector (RTD) microstructure, the relationship between the resistance of the RTD microstructure and the measured temperature is as follows: in, The temperature to be measured T The resistance below, Reference temperature The initial resistance below, alpha is the temperature coefficient of resistance.

[0016] Preferably, when the MEMS temperature chip is a thermocouple-type microstructure, the relationship between the thermoelectric potential of the thermocouple-type microstructure and the measured temperature is as follows: in, E The temperature to be measured Th Thermoelectric potential under, S This is the Seebeck coefficient of the thermocouple. Tr This is the reference temperature.

[0017] Preferably, the support structure is an external probe rod, with leads passing through the external probe rod and the ceramic lead cover to connect to the signal contacts.

[0018] Compared with the prior art, the advantages of this application are: (1) This application proposes a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip. By integrating a MEMS temperature chip into a micro probe and cooperating with a flow guide shield, signal contacts and ceramic lead wire cover, a local flow guide channel is formed in the flow guide shield. The side wall of the flow guide shield is provided with side holes distributed in a multi-hole array, so as to achieve high-precision, high-dynamic and high-reliability measurement of total temperature parameters of high-speed unsteady flow field. (2) This application achieves high precision, high dynamic response and high reliability transient total temperature measurement under the working conditions of total temperature range of 0℃~600℃ and incoming flow velocity of about 0.8Ma through the collaborative design of MEMS temperature chip, current guide shield, signal contact and ceramic lead cover; (3) This application reduces heat capacity and improves fluid flow by setting through holes or thermal insulation microstructures on the chip; optimizes local flow total temperature recovery by using a flow-guiding shield; and improves lead wire insulation and mechanical support reliability by using a ceramic lead wire cover, thereby forming a miniature high-frequency transient total temperature probe suitable for engineering applications; (4) This application significantly improves the dynamic response capability of total temperature measurement and is suitable for unsteady flow field testing; this application reduces the probe size and MEMS temperature chip size, and improves spatial resolution; at the same time, it reduces the interference to the original flow field and temperature field, and improves the accuracy of measurement. (5) This application improves the internal fluid flow and total temperature recovery characteristics of the probe, reduces gas retention error, improves the structural reliability, stability and repeatability under high temperature and high speed airflow environment, and the MEMS temperature chip is compatible with both RTD and thermocouple chip solutions, and has good engineering adaptability. Attached Figure Description

[0019] Figure 1 This is a three-dimensional view of a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip according to this application. Figure 2 This is a top view of a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip according to this application. Figure 3 This is a cross-sectional view of a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip according to this application. Figure 4 This is a schematic diagram of the thermocouple-type MEMS temperature chip of this application.

[0020] Explanation of reference numerals in the attached figures: 1. MEMS temperature chip, 2. Current guiding shield, 3. Signal contact, 4. Ceramic lead cover, 5. Lead wire, 6. External probe rod; 1-1. Circular through hole; 1-2. Circular temperature sensing core area; 1-3. Circular radial microstructure; 1-4. Thermocouple; 2-1. Frontal area; 2-2. Limiting step; 2-3. Bottom hole; 2-4. Side hole; 2-1-1, Local transition section; 2-1-2, Central square hole. Detailed Implementation

[0021] The present application is described in detail below with reference to the accompanying drawings and specific embodiments, but the present application is not limited to these embodiments. The present application covers any alternatives, modifications, equivalent methods, and solutions made within the spirit and scope of the present application. To provide the public with a thorough understanding of the present application, specific details are described in detail in the following embodiments, but those skilled in the art will fully understand the present application even without these detailed descriptions.

[0022] like Figures 1-4 As shown, this application discloses a transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip, which consists of a probe part and a support structure part; The probe part includes: a MEMS temperature chip 1, a current-guiding shield 2, a signal contact 3, and a ceramic lead cover 4. The MEMS temperature chip 1 is fixedly installed inside the current-guiding shield 2. The current-guiding shield 2 covers the MEMS temperature chip 1 and forms a local current-guiding channel. The signal contact 3 is located at the edge of the MEMS temperature chip 1. One end of the ceramic lead cover 4 is located on one side of the current-guiding shield 2 and is close to the signal contact 3. The supporting structure is connected to the other end of the ceramic lead cover 4, and the lead 5 passes through the supporting structure and the ceramic lead cover 4 to connect to the signal contact 3.

[0023] like Figure 3 As shown, preferably, the flow-guiding shield 2 is a cylindrical shell structure. The flow-guiding shield 2 has a front flow-facing area 2-1, a limiting step 2-2 in the middle, and a bottom hole 2-3 at the rear. The front flow-facing area 2-1 and the bottom hole 2-3 are connected to form a local flow-guiding channel. The MEMS temperature chip 1 is fixedly mounted on the limiting step 2-2, and the ceramic lead cover 4 is set on one side of the flow guide shield 2 and communicates with the flow-facing area 2-1. The axis of the flow guide shield 2 is perpendicular to the axis of the ceramic lead cover 4.

[0024] like Figure 3 As shown, preferably, the flow-facing region 2-1 is composed of a local transition section 2-1-1 and a central square hole 2-1-2. The local transition section 2-1-1 is divided into four parts, and the four parts of the local transition section 2-1-1 are respectively connected to the four sides of the central square hole 2-1-2. The local transition section 2-1-1 is an arc surface or a slope surface.

[0025] Preferably, the included angle between the tangents of the two local transition segments 2-1-1 is 120°~150°.

[0026] like Figure 3 As shown, preferably, the included angle between the tangents of the two local transition segments 2-1-1 is 120°.

[0027] like Figure 3 As shown, preferably, the flow-guiding shield 2 is also provided with side holes 2-4, which are evenly distributed in a multi-hole array along the circumference and are connected to the flow-facing region 2-1.

[0028] like Figure 2 As shown, preferably, the MEMS temperature chip 1 is a resistance temperature detector (RTD) microstructure. A circular through-hole 1-1 is opened in the center of the RTD microstructure. A circular temperature sensing core area 1-2 is arranged circumferentially near the circular through-hole 1-1. A series of circumferentially radial microstructures 1-3 are arranged around the circular temperature sensing core area 1-2. The circumferentially radial microstructures 1-3 are toothed, beam-shaped, or cantilever-shaped. The circumferentially radial microstructure 1-3 is also provided with several through holes or auxiliary openings on its periphery.

[0029] like Figure 4 As shown, preferably, the MEMS temperature chip 1 is a thermocouple-type microstructure. A circular through hole 1-1 is also provided in the center of the thermocouple-type microstructure. Four bridged thermocouples 1-4 are arranged around the circular through hole 1-1. The temperature sensing area of ​​the thermocouples 1-4 is close to the circular through hole 1-1. The two ends of the tail of the thermocouples 1-4 are connected to the signal contact 3 on the edge of the MEMS temperature chip 1 through the bridged microstructure. The signal contact 3 is connected to the lead wire 5. The thermocouples 1-4 are made of Pt and PtRh materials.

[0030] Preferably, when the MEMS temperature chip 1 is a resistance temperature detector (RTD) microstructure, the relationship between the resistance of the RTD microstructure and the measured temperature is as follows: in, The temperature to be measured T The resistance below, Reference temperature The initial resistance below, alpha is the temperature coefficient of resistance.

[0031] Preferably, when the MEMS temperature chip 1 is a thermocouple-type microstructure, the relationship between the thermoelectric potential of the thermocouple-type microstructure and the measured temperature is as follows: in, E The temperature to be measured Th Thermoelectric potential under, S This is the Seebeck coefficient of the thermocouple. Tr This is the reference temperature.

[0032] like Figure 1 As shown, preferably, the support structure is an external probe rod 6, and the lead wire 5 passes through the external probe rod 6 and the ceramic lead wire cover 4 to connect to the signal contact 3.

[0033] Example 1 The transient total temperature probe in this embodiment mainly consists of a probe part and a support structure part. The probe part is the core temperature measurement unit, and the support structure part is used for installation, fixation, and lead wire output. The probe part mainly includes: MEMS temperature chip 1, current-guiding shield 2, signal contact 3, and ceramic lead wire cover 4.

[0034] like Figure 2 As shown, the probe's front view structure is illustrated, such as... Figure 3 The diagram shows the probe's cross-sectional structure to simultaneously illustrate the positional relationships between the MEMS temperature chip, the flow-guiding shield, the signal contacts, and the ceramic lead cover. The probe employs a miniaturized design; preferably, the sensitive measurement surface size of the MEMS temperature chip is controlled to be less than 2mm × 2mm, with a typical chip size of 1.8mm × 1.8mm. The overall outer diameter of the probe is no greater than 3mm to reduce its obstructive effect on the measured flow field and additional interference, thereby improving spatial resolution.

[0035] The flow-guiding shield 2 is set outside the probe to cover the MEMS temperature chip 1 and form a local flow-guiding channel. The flow-guiding shield serves both as mechanical protection and as a means to rectify, buffer, and shield the high-speed incoming flow, so that the airflow forms a relatively stable local heat exchange environment near the flow-facing area. The signal contact 3 is set on the upper part or edge area of ​​the MEMS temperature chip 1 to lead out the temperature measurement signal of the MEMS temperature chip 1. The ceramic lead cover 4 is set on one side of the probe to provide insulation protection and structural support for the lead wire 5.

[0036] like Figure 1 As shown, the flow-guiding shield preferably adopts a cylindrical shell structure, with a flow-facing area formed at the front. The local transition section 2-1-1 of the flow-facing area can be designed as a local arc surface, cone, or expansion flow-guiding cavity, so that the high-speed airflow is locally decelerated and redistributed before entering the central square hole 2-1-2 (chip temperature sensing area), thereby enhancing the overall temperature recovery capability.

[0037] like Figure 2 As shown, side holes 2-4 are provided on the side wall of the flow guide shield 2. The side holes 2-4 can be in the form of a multi-hole array and are evenly distributed along the circumference. Their function is to improve the fluid renewal capability inside the probe, reduce gas retention in the packaging space, and enhance the convective heat transfer effect near the MEMS temperature chip. The side holes 2-4 cooperate with the front flow-facing area 2-1 of the probe to make the flow field inside the probe closer to the actual total temperature recovery conditions, thereby improving the measurement accuracy.

[0038] like Figure 2As shown, a MEMS temperature chip 1 is installed inside the flow-guiding shield 2. The signal contact 3 at the rear of the MEMS temperature chip 1 is connected to the lead wire 5. The lead wire 5 passes through the ceramic lead wire cover 4 and the external probe rod 6. After the signal of the MEMS temperature chip 1 is led out through the signal contact 3, it is insulated and mechanically supported by the ceramic lead wire cover 4. This structure not only reduces the thermal interference of the lead wire area to the chip temperature sensing area, but also improves the packaging reliability under high temperature and high speed flow field environment.

[0039] like Figure 2 As shown, the MEMS temperature chip 1 can adopt a resistance temperature detector (RTD) microstructure. A circular temperature-sensing core area 1-2 is set in the center of the chip, and a circumferentially radiating microstructure 1-3 is set around it. The microstructure can be toothed, beam-shaped, or cantilever-shaped. Its function is to reduce the heat conduction between the temperature-sensing core area and the external support area, improve the thermal isolation effect, and reduce the equivalent heat capacity of the MEMS temperature chip 1. Several through holes or auxiliary openings can also be set on the MEMS temperature chip 1 to improve local fluid flow and heat exchange path and reduce internal gas retention.

[0040] Through the above structural design, the circular temperature-sensing core area 1-2 can quickly reach thermal equilibrium with the fluid, and can also maintain the necessary mechanical support through the circumferentially radiating microstructure 1-3, thus taking into account both high-frequency response and structural reliability.

[0041] like Figure 4 As shown, the MEMS temperature chip 1 can also adopt a thermocouple-type microstructure. The chip adopts a four-way bridging or symmetrical wiring structure, with the temperature sensing area in the center and the surrounding area connected to the outer frame through bridging microstructures. Signal lead-out pads are set on the periphery. The different material wiring forms shown in the figure can be used for corresponding thermocouple measurement routes. Therefore, this application can also form a thermocouple / resistance temperature detector compatible design scheme.

[0042] When using a resistance-type microstructure, temperature measurement can be achieved by measuring changes in resistance; when using a thermocouple-type chip, total temperature measurement can be achieved by measuring the thermoelectric potential output. Both types of chips can be installed in similar probe structures, differing only in the chip sensing element and lead connection method, thus offering good engineering adaptability.

[0043] The high-frequency response capability of the MEMS temperature chip in this application mainly depends on the heat capacity and local convection heat transfer capability of the MEMS temperature chip. The thermal response time constant of the sensor can be approximately expressed as: in, tau The thermal response time constant, Cth The equivalent heat capacity of the MEMS temperature chip. h The convective heat transfer coefficient is... A For effective heat exchange area.

[0044] Further, there are: in, rho For material density, c For specific heat capacity, V This refers to the volume of the MEMS temperature chip.

[0045] As can be seen from the above relationships, reducing the size of MEMS temperature chips... V Reduce heat capacity Cth At the same time, increase the effective heat exchange area. A and convective heat transfer coefficient h This can significantly reduce the time constant. tau This reduces the time to approximately 1 microsecond, improving the dynamic response speed of the sensor. This application achieves this goal through MEMS miniaturization, circumferential radial microstructures, and through-hole flow guidance design.

[0046] When a MEMS temperature chip uses a resistance-type microstructure, its resistance and temperature satisfy the following relationship: in, The temperature to be measured T The resistance below, Reference temperature The initial resistance below, alpha is the temperature coefficient of resistance.

[0047] When a MEMS temperature chip uses a thermocouple-type microstructure, its output thermoelectric potential approximately satisfies: in E The temperature to be measured Th Thermoelectric potential under, S This is the Seebeck coefficient of the thermocouple. Tr This is the reference temperature.

[0048] Based on the two temperature measurement principles mentioned above, the probe of this application can be configured as either a high-precision resistance temperature detector (RTD) probe or a high-dynamic thermocouple probe.

[0049] The probe described in this application is used for measurements within the total temperature range of 0℃ to 600℃, and is suitable for fluid velocities up to approximately 0.8 Ma (about 306 m / s). The measurement accuracy is 0.5℃ to 1℃, with repeatability and stability reaching 0.1℃. Because the probe's sensitive surface size is less than 2mm × 2mm, it has high spatial resolution and is suitable for total temperature measurements in narrow flow channels and localized high-gradient temperature fields in turbomachinery.

[0050] When in use, either a resistance temperature detector (RTD) MEMS temperature chip or a thermocouple temperature chip can be selected according to the testing requirements. The chip is installed inside the flow guide shield and connected to the external leads through signal contacts. The rear is encapsulated and protected by a ceramic lead cover. The RTD chip has a temperature sensing core area, circumferential radial microstructures and through holes on its surface to reduce heat capacity and enhance local fluid heat transfer. After the probe is installed in the testing system, it can be used for transient total temperature measurement of high-speed unsteady flow fields inside turbomachinery.

[0051] The preferred embodiments of this application have been described in detail above. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application.

[0052] Many other changes and modifications can be made without departing from the concept and scope of this application. It should be understood that this application is not limited to the specific embodiments, and the scope of this application is defined by the appended claims.

Claims

1. A transient total temperature probe based on a MEMS miniature high-frequency temperature sensing chip, characterized in that: It consists of a probe section and a support structure section; The probe part includes: a MEMS temperature chip (1), a flow-guiding shield (2), a signal contact (3), and a ceramic lead cover (4). The MEMS temperature chip (1) is fixedly installed inside the flow-guiding shield (2). The flow-guiding shield (2) covers the MEMS temperature chip (1) and forms a local flow-guiding channel. The signal contact (3) is located at the edge of the MEMS temperature chip (1). One end of the ceramic lead cover (4) is located on one side of the flow-guiding shield (2) and is close to the signal contact (3). The supporting structure is connected to the other end of the ceramic lead cover (4), and the lead wire (5) passes through the supporting structure and the ceramic lead cover (4) and is connected to the signal contact (3).

2. The transient total temperature probe based on MEMS micro high-frequency temperature sensing chip according to claim 1, characterized in that: The flow-guiding shield (2) is a cylindrical shell structure. The flow-guiding shield (2) forms a flow-facing area (2-1) at the front, a limiting step (2-2) in the middle, and a bottom hole (2-3) at the rear. The flow-facing area (2-1) and the bottom hole (2-3) are connected to form a local flow-guiding channel. The MEMS temperature chip (1) is fixedly installed on the limiting step (2-2), and the ceramic lead cover (4) is set on one side of the flow guide shield (2) and connected to the flow-facing area (2-1). The axis of the flow guide shield (2) is perpendicular to the axis of the ceramic lead cover (4).

3. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 2, characterized in that: The incoming flow area (2-1) consists of a local transition section (2-1-1) and a central square hole (2-1-2). The local transition section (2-1-1) is divided into four parts, and the four parts of the local transition section (2-1-1) are respectively connected to the four sides of the central square hole (2-1-2). The local transition section (2-1-1) is an arc surface or a slope.

4. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 3, characterized in that: The included angle between the tangents of the two local transition segments (2-1-1) is 120°~150°.

5. A transient total temperature probe based on a MEMS micro high-frequency temperature sensing chip according to claim 2, characterized in that: The flow guide shield (2) is also provided with side holes (2-4). The side holes (2-4) are arranged in a multi-hole array and are evenly distributed in the circumferential direction and are connected to the flow-facing area (2-1).

6. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 1, characterized in that: The MEMS temperature chip (1) is a resistance temperature detector (RTD) microstructure. A circular through hole (1-1) is opened in the center of the RTD microstructure. A circular temperature sensing core area (1-2) is arranged around the circular through hole (1-1). A series of circumferentially radial microstructures (1-3) are arranged around the circular temperature sensing core area (1-2). The circumferentially radial microstructures (1-3) are tooth-shaped, beam-shaped or cantilever-shaped. The periphery of the circumferentially radial microstructure (1-3) is also provided with several through holes or auxiliary openings.

7. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 1, characterized in that: The MEMS temperature chip (1) is a thermocouple-type microstructure. A circular through hole (1-1) is also provided in the center of the thermocouple-type microstructure. Four bridged thermocouples (1-4) are arranged around the circular through hole (1-1). The temperature sensing area of ​​the thermocouples (1-4) is close to the circular through hole (1-1). The two ends of the tail of the thermocouples (1-4) are connected to the signal contact (3) on the edge of the MEMS temperature chip (1) through the bridged microstructure. The signal contact (3) is connected to the lead wire (5). The thermocouples (1-4) are made of Pt and PtRh materials.

8. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 6, characterized in that: When the MEMS temperature chip (1) is a thermal resistance type microstructure, the relationship between the resistance of the thermal resistance type microstructure and the measured temperature is: wherein, R is the resistance at the measured temperature T R is the initial resistance at the reference temperature R is the initial resistance at the reference temperature R is the initial resistance at the reference temperature alpha R is the initial resistance at the reference temperature 9. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 7, characterized in that: When the MEMS temperature chip (1) is a thermocouple type microstructure, the relationship between the thermoelectric potential of the thermocouple type microstructure and the measured temperature is: wherein E is the thermoelectric potential at the measured temperature Th , S is the Seebeck coefficient of the thermocouple, Tr is the reference end temperature.

10. The transient total temperature probe based on MEMS micro high frequency temperature sensing chip according to claim 1, characterized in that: The support structure part is an external probe rod (6), and a lead wire (5) passes through the external probe rod (6) and a ceramic lead cover (4) to be connected with a signal contact (3).

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