Touch panel and panel capacitance compensation method

Abstract

This application discloses a touch panel and a capacitance compensation method for the panel, relating to the field of capacitive touch technology. The touch panel includes a substrate and a touch electrode layer disposed on the substrate. The touch electrode layer includes multiple touch nodes, each touch node having a ring-shaped fusible region around its periphery. Each ring-shaped fusible region includes multiple sub-regions connected end-to-end along the ring-shaped fusible region. Each sub-region includes a capacitance compensation structure and a fusible microbridge structure connected to the capacitance compensation structure. The fusible microbridge structure includes a fusible signal input section. The fusible microbridge structure is a fusible material under the action of the fusible signal, and the melting point of the fusible material is greater than or equal to the melting point of the capacitance compensation structure. The method of this application significantly improves the manufacturing yield and stability of touch device performance, and also provides a guarantee for the long-term reliability of touch devices in complex usage environments.

Description

Technical Field

[0001] This disclosure generally relates to the field of capacitive touch technology, and more particularly to a touch panel and a method for compensating panel capacitance. Background Technology

[0002] For touch panels of touch devices (such as capacitive screens), the weak electric field they rely on is easily affected by manufacturing processes, environmental changes and electromagnetic interference, leading to inaccurate detection of capacitance changes. This inaccuracy directly damages the accuracy and stability of touch positioning, causing performance problems such as insensitive touch, touch point offset or false triggering.

[0003] To address the aforementioned performance issues, related technologies employ a method of manufacturing touch panels by arranging a static compensation area around the touch electrodes. While this method avoids performance problems caused by manufacturing processes, environmental changes, and electromagnetic interference, the static compensation area around the touch electrodes is formed in a single, fixed process. Consequently, the weak electric field upon which the touch panel relies during subsequent use cannot be fine-tuned when performance issues such as inaccurate touch position determination or lack of touch response arise due to coupling interference from multiple factors, including temperature changes, material aging, and encapsulation stress. This results in a low yield rate for touch device manufacturing. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide a touch panel and a panel capacitance compensation method, which can effectively solve the problem that the capacitance of the touch panel cannot be dynamically fine-tuned during the use of the touch device, significantly improve the manufacturing yield of the touch device and the stability of the touch performance, and also provide a guarantee for the long-term reliability of the touch device in complex usage environments.

[0005] In a first aspect, this application provides a touch panel, comprising: a substrate and a touch electrode layer disposed on the substrate. The touch electrode layer includes multiple touch nodes, and each touch node has an annular fusible region around its periphery. Each annular fusible region includes multiple sub-regions connected end-to-end along the annular fusible region. Each sub-region includes a capacitance compensation structure and a fusible microbridge structure connected to the capacitance compensation structure. The fusible microbridge structure includes a fusible signal input section. The fusible microbridge structure is a fusible material under the action of the fusible signal, and the melting point of the fusible material is greater than or equal to the melting point of the capacitance compensation structure.

[0006] In conjunction with the first aspect, in one possible implementation, the touch electrode layer includes a first electrode layer, a second electrode layer, a fusible layer disposed on the side of the first electrode layer away from the substrate, and a capacitance compensation layer disposed on the side of the microbridge structure layer away from the first electrode layer. The fusible layer includes a plurality of the fusible microbridge structures, and the capacitance compensation layer includes a plurality of the capacitance compensation structures.

[0007] In conjunction with the first aspect, in one possible implementation, an insulating layer is provided between the second electrode layer and the capacitor compensation layer.

[0008] In conjunction with the first aspect, in one possible implementation, the fusible microbridge structure has a width of 10–30 μm, a thickness of 1–2 μm, and a length of 30–100 μm.

[0009] In conjunction with the first aspect, in one possible implementation, the spacing between the fusible microbridge structures of adjacent sub-regions is 50–200 μm.

[0010] In conjunction with the first aspect, in one possible implementation, the fuse signal input section includes a first binding area and a second binding area disposed at both ends of the fusible microbridge structure; the first binding area and the second binding area are electrically connected to the DAC output terminal of the control chip of the touch panel, and are used to receive the pulse current output by the DAC output terminal, wherein the pulse current is the fuse signal.

[0011] In conjunction with the first aspect, in one possible implementation, the capacitor compensation structure is a copper foil or an aluminum foil, and the fusible microbridge structure is a Sn-Cu microbridge structure.

[0012] Secondly, this application also provides a panel capacitance compensation method, applied to the touch panel described in the first aspect above, the method comprising: Based on the initial capacitance value and target capacitance value of each touch node in the touch panel, the target fusible microbridge structure in the target annular fusible region corresponding to the target touch node is determined; the target touch node is the touch node whose capacitance value needs to be compensated. A preset pulse current is input to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure, and the panel capacitance compensation result of the touch panel is determined based on the fuse-breaking process result.

[0013] In conjunction with the second aspect, in one possible implementation, the step of inputting a preset pulse current to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure, and determining the panel capacitance compensation result of the touch panel based on the fuse-breaking process result, includes: During the first duration, a preset pulse current is continuously input to the fuse signal input section of the target fusible microbridge structure, and during the second duration after the input of the preset pulse current ends, the microbridge resistance measurement mode is entered, and the fuse processing result of the target fusible microbridge structure is determined based on the current resistance value of the target fusible microbridge structure. If the fusing process result indicates that the target fusible microbridge structure has been successfully fused, then the current capacitance value of each touch node in the touch panel is obtained, and the panel capacitance compensation result is determined based on the multiple current capacitance values.

[0014] In conjunction with the second aspect, in one possible implementation, the method further includes: If the fusing process result indicates that the target fusible microbridge structure has not been successfully fused, then a preset pulse current is input to the fusing signal input section of the backup fusible microbridge structure in the target annular fusible region corresponding to the target touch node, and the fusing process is performed on the backup fusible microbridge structure. The number of fusible microbridge structures contained in the target annular fusible region is the sum of the number of the spare fusible microbridge structures and the target fusible microbridge structures.

[0015] This application provides a touch panel and a capacitance compensation method for the panel. The touch panel, by setting an annular fusible region and a fusible microbridge structure around each touch node in the touch electrode layer, can selectively melt specific fusible microbridge structures by precisely controlling the melting signal, thereby melting the corresponding capacitance compensation structure. This on-demand melting capability allows the capacitance value of the touch panel to be finely and irreversibly adjusted after manufacturing and even throughout the product lifecycle. Furthermore, by setting the melting point of the fusible material of the fusible microbridge structure to be greater than or equal to the melting point of the capacitance compensation structure, the accuracy and safety of the melting process are ensured, damage to non-target areas is avoided, and the effectiveness of capacitance compensation is further guaranteed. This effectively solves the problem in the prior art that the capacitance value of touch panels cannot be dynamically fine-tuned during the use of touch devices, significantly improving the manufacturing yield and stability of touch performance, and also providing a guarantee for the long-term reliability of touch devices in complex usage environments. Attached Figure Description

[0016] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a top view of a touch node and its surrounding annular fusible region in one embodiment; Figure 2 This is a schematic diagram of the annular copper foil area surrounding the touch node in one embodiment; Figure 3 This is a front view schematic diagram of the touch electrode layer in one embodiment; Figure 4 This is a schematic diagram of an independent pad + DAC driver connection method in one embodiment; Figure 5 This is a front view schematic diagram of the touch electrode layer after capacitance compensation in one embodiment; Figure 6 This is one of the flowcharts illustrating a panel capacitance compensation method in one embodiment; Figure 7 This is a second schematic flowchart of a panel capacitance compensation method in one embodiment; Figure 8 This is the third flowchart of a panel capacitance compensation method in one embodiment; Figure 9 This is the fourth flowchart of a panel capacitance compensation method in one embodiment; Figure 10 This is the fifth flowchart illustrating the panel capacitance compensation method in one embodiment; Figure 11 This is a schematic diagram of the panel capacitance compensation method in one embodiment, number six. Figure 12 This is an internal structural diagram of a touch device in one embodiment. Detailed Implementation

[0017] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0018] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present application will now be described in detail with reference to the accompanying drawings and embodiments. Furthermore, the term "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. The terms "first" and "second," etc., in the specification and claims of the embodiments of this application are used to distinguish different objects, not to describe a specific order of objects.

[0019] First, the relevant terms used in this application will be explained: Encapsulation stress mainly refers to the mechanical or thermodynamic stress generated inside the product during the encapsulation process due to material, process, or environmental factors. These stresses may affect touch performance, reliability, and lifespan.

[0020] Manufacturing yield refers to the percentage of qualified products out of the total production quantity during the manufacturing process of touch devices (such as touch screens, touch modules, etc.). A low yield reflects process or design problems in the production process, and if these problems are not resolved, they may affect the long-term reliability of the product, thereby shortening its service life.

[0021] Capacitance dynamic drift refers to the phenomenon in capacitive touch technology where the capacitance value detected by the touch electrode fluctuates unexpectedly over time or due to environmental changes, leading to inaccurate touch position determination or accidental touches.

[0022] For touch panels of touch devices (such as capacitive screens), the weak electric field they rely on is easily affected by manufacturing processes, environmental changes and electromagnetic interference, leading to inaccurate detection of capacitance changes. This inaccuracy directly damages the accuracy and stability of touch positioning, causing performance problems such as insensitive touch, touch point offset or false triggering.

[0023] To address the aforementioned performance issues, related technologies employ a method of manufacturing touch panels by arranging a static compensation area around the touch electrodes. While this method avoids performance problems caused by manufacturing processes, environmental changes, and electromagnetic interference, the static compensation area around the touch electrodes is formed in a single, fixed process. Consequently, the weak electric field upon which the touch panel relies during subsequent use cannot be fine-tuned when performance issues such as inaccurate touch position determination or lack of touch response arise due to coupling interference from multiple factors, including temperature changes, material aging, and encapsulation stress. This results in a low yield rate for touch device manufacturing.

[0024] For example, using photolithography to arrange static compensation patterns around the touch electrodes, such as adding virtual electrodes or metal blocks to create a one-time pattern, traditional photolithography re-production is costly and time-consuming. Once photolithography is completed, it cannot be changed again. It cannot cope with the dynamic drift of capacitance caused by adverse factors such as subsequent temperature changes, material aging, and packaging stress. It is also impossible to fine-tune the capacitance value a second time after the touch device is produced, resulting in a low yield of touch device manufacturing.

[0025] To address the aforementioned technical issues (such as the performance degradation of touch devices caused by capacitance drift due to adverse factors like material aging, temperature changes, and encapsulation stress during subsequent use of the touch panel), and to achieve adjustable capacitance after subsequent touch and display assembly, this application provides a touch panel and a panel capacitance compensation method that can perform capacitance compensation in a one-time, instantaneous manner. This method enables independent capacitance uniformity adjustment of the touch panel, avoiding inter-panel differences caused by uniform pattern compensation through overall photomask changes, and requires additional thickness and power consumption. The capacitance difference is reduced to within ±1%.

[0026] The following is through Figures 1 to 12 This application describes a touch panel and a panel capacitance compensation method, wherein the touch panel can be applied to other electronic devices such as smartphones, tablets, laptops, and smart wearable devices. This application does not specifically limit the specific form of the electronic device.

[0027] To facilitate understanding of the touch panel provided in the embodiments of this application, the touch panel will be described in detail below through several exemplary embodiments. It is understood that these exemplary embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0028] The touch panel provided in this application includes: a substrate and a touch electrode layer disposed on the substrate. The touch electrode layer includes multiple touch nodes. Each touch node has an annular fusible region around its periphery. Each annular fusible region includes multiple sub-regions connected end-to-end along the annular fusible region. Each sub-region includes a capacitor compensation structure and a fusible microbridge structure connected to the capacitor compensation structure. The fusible microbridge structure includes a fusible signal input section. The fusible microbridge structure is a fusible material under the action of the fusible signal, and the melting point of the fusible material is greater than or equal to the melting point of the capacitor compensation structure.

[0029] Specifically, refer to Figure 1 This is a top view schematic diagram of the touch node and its surrounding annular fusible region provided in the embodiments of this application, as shown below. Figure 1 As shown, the touch node is specifically a mesh structure formed by silver paste conductive adhesive and a pitch center. The red lines surrounding it form a ring-shaped fusible area, and the four red segments on the red lines are all fusible microbridge structures (i.e., Figure 1 The fusible microbridge (Sn-Cu) has a ring-shaped fusible region with a width of 10 μm and a fusible microbridge structure with a width of 30 μm.

[0030] for Figure 1 The touch node and its surrounding annular fusible region shown have a complete process that includes both materials and equipment, as well as process steps. The materials and equipment include silver conductive paste, a hot press head, and a substrate. The silver content of the silver conductive paste is 55–60%, the viscosity is 25–30 Pa·s, the curing temperature is 150 ℃, and the polymer material is H200 series. The hot press head operates at 150℃±3℃, with a pressure of 0.3MPa and a time of 5s. The substrate material is glass, polyethylene terephthalate (PET), or indium tin oxide (ITO), with a thickness of 100nm.

[0031] The process includes five sub-steps: surface cleaning, silver paste printing, pre-drying, hot-press bonding, and post-curing and testing. Surface cleaning can be achieved by laser etching or plasma cleaning of the ITO surface to remove organic residues, with Ra < 5 nm. Silver paste printing can be achieved by screen printing / dispensing to deposit 20–30 µm thick silver paste dots with a diameter of 0.3 mm on the ITO pads. Pre-drying can be achieved by drying in an 80 ℃ oven for 2 min to evaporate solvents and avoid bubbles. Hot-press bonding can be achieved by aligning a compensation copper foil (4 µm thick, 0.5 mm wide) with the silver paste dots and hot-pressing at 150 ℃, 0.3 MPa, and 5 s for curing. Post-curing and testing can be achieved by fully curing in a 150 ℃ oven for 10 min, and four-probe testing can be achieved by ensuring a connection resistance ≤ 50 mΩ and a shear force ≥ 5 N / mm². The specific implementation process involved can be referenced from the existing technologies regarding surface cleaning, silver paste printing, pre-drying, hot pressing, and post-curing and testing principles. These will not be elaborated upon here.

[0032] The substrate can be made of glass or other materials such as PET, and it serves as the structural foundation of the touch panel, supporting and carrying other functional layers laid on it.

[0033] The touch electrode layer can be understood as the core functional layer in the touch panel used to sense touch signals. It can form a mutual capacitance node matrix by arranging the upper and lower electrodes in a cross pattern, with each intersection being an independent touch node.

[0034] A touch node can be understood as the smallest unit or area in the touch electrode layer used to sense changes in local capacitance. Each touch node corresponds to an independently detectable touch point, and its capacitance value directly affects the sensitivity and accuracy of touch.

[0035] The annular fusible area can be understood as a fusible area with adjustable capacitance characteristics set around the periphery of the touch node. Its annular design aims to provide uniform capacitance compensation and allows for fine adjustment of capacitance through a melting operation.

[0036] A fusible microbridge structure can be understood as a miniature conductive bridge made of fusible material. When it receives a specific fusible signal, it can break or change the circuit connection by fusing itself, thereby affecting the capacitor compensation structure connected to it and adjusting the capacitance value.

[0037] The fuse signal input section can be understood as an interface or connection point on the fusible microbridge structure for receiving external fuse signals. The fuse signal applied through this input section can trigger the fuse of the fusible microbridge structure.

[0038] A fusing signal can be understood as a specific electrical signal used to trigger the fusing of a fusible microbridge structure, such as a high-energy pulsed current. Its function is to make the fusible material of the fusible microbridge structure reach its melting point and undergo physical fracture.

[0039] Specifically, in order to achieve fine adjustment of the capacitance of the touch node, an annular fusible area is set around each touch node; this annular design ensures that the various capacitor compensation structures can be evenly distributed around the touch node, avoiding touch performance deviation caused by uneven compensation.

[0040] Each annular fusible region comprises multiple sub-regions, which are connected end-to-end along the annular fusible region. This design allows the overall capacitance of the annular fusible region to be adjusted discretely. For example, the annular fusible region can be divided into several sector-shaped or rectangular segments, each of which is a sub-region. By selectively manipulating these sub-regions, the capacitance of the touch node can be adjusted incrementally.

[0041] It should be noted that, for any of the multiple annular fusible regions, which include multiple sub-regions, one side of the fusible microbridge structure in a certain sub-region is connected to the copper foil of the capacitor compensation structure and connected to the cathode, and the other side is connected to the copper foil of the capacitor compensation structure and connected to the anode. In this way, when the fusible signal input part of the fusible microbridge structure in that sub-region receives the fusible signal, electrons flow from the copper foil connected to the cathode in that sub-region into the fusible microbridge structure. The copper foil on the cathode side undergoes electromigration and dissolution to form a 3~5μm gap. This sub-region is electrically isolated. The capacitor compensation structure in another sub-region connected to the copper foil connected to the anode does not dissolve and remains connected to the subsequent sub-region.

[0042] The fusible microbridge structure further includes a fusible signal input section, which can be a physical interface for receiving external fusible signals, for example, it can be designed as pads or connection points at both ends of the microbridge.

[0043] The touch electrode layer can be made of ITO or metal mesh, with a thickness of 100–150 nm. Each touch node in the touch electrode layer has a 4 mm pitch, meaning that the distance between two adjacent touch nodes in the touch electrode layer is 4 mm. For example, there is an independent touch node arranged in the electrode array every 4 mm, forming a regular grid structure.

[0044] For example, the touch panel is 8 inches in size, with an effective touch area of ​​approximately 172.8 mm × 108.0 mm based on a 16:10 aspect ratio. The touch electrode layer includes 300 touch nodes, and 300 annular copper foil areas corresponding one-to-one with each touch node. Each touch node is surrounded by an independently set annular copper foil area, and each annular copper foil area is 0.5 mm wide (embedded in the gap between touch nodes and does not occupy the effective touch area). The compensation copper foil area for a single touch node is: 4 mm × 0.5 mm × 2 (both sides) = 4 mm². For example, refer to... Figure 2 The diagram shows the annular copper foil area surrounding the touch node. Figure 2 The conventional touch electrode (ITO, 4mm pitch) in the touch field can be understood as the center of the touch node.

[0045] Twenty fusible microbridge structures are set within each annular copper foil region. The area of ​​the capacitor compensation structure reduced by 0.2 mm² is controlled by the melting of a single microbridge. 2 The touch node gap is 0.5mm (for routing and compensation structure). The gap area of ​​the touch node is embedded in the annular copper foil area, which does not block the effective touch area of ​​the touch electrode layer. The fusible microbridge structure and pads are arranged in the corner of the gap and connected to the touch IC through FPC lead wires.

[0046] The touch panel provided in this application embodiment, by setting an annular fusible area and a fusible microbridge structure around each touch node in the touch electrode layer, can selectively melt specific fusible microbridge structures by precisely controlling the melting signal, thereby melting the corresponding capacitor compensation structure. This on-demand melting capability allows the capacitance value of the touch panel to be finely and irreversibly adjusted after manufacturing and even throughout the product lifecycle. In addition, by setting the melting point of the fusible material of the fusible microbridge structure to be greater than or equal to the melting point of the capacitor compensation structure, the accuracy and safety of the melting process are ensured, damage to non-target areas is avoided, and the effectiveness of capacitance compensation is further guaranteed. This effectively solves the problem in the prior art that the capacitance value of the touch panel cannot be dynamically fine-tuned during the use of the touch device, significantly improves the manufacturing yield and stability of the touch device, and also provides a guarantee for the long-term reliability of the touch device in complex usage environments.

[0047] In one example embodiment, considering that an unclear layered structure may lead to inconsistencies in the positional relationship between the fusible microbridge structure and the capacitor compensation structure, affecting the accuracy of the fusing operation and the stability of the compensation effect, this application embodiment also provides a layered structure for the touch electrode layer, as follows: The touch electrode layer includes a first electrode layer, a second electrode layer, a fusible layer disposed on the side of the first electrode layer away from the substrate, and a capacitor compensation layer disposed on the side of the microbridge structure layer away from the first electrode layer. The fusible layer includes multiple fusible microbridge structures, and the capacitor compensation layer includes multiple capacitor compensation structures.

[0048] For example, when the first electrode layer is specifically a lower electrode ITO, the second electrode layer is specifically an upper electrode ITO, the capacitance compensation layer is specifically a compensation copper foil, the fusible layer is specifically a Sn-Cu microbridge, and the substrate is specifically a glass substrate, the following can be obtained: Figure 3 A front view schematic diagram of the touch electrode layer shown.

[0049] The first electrode layer, as the basic component of the touch electrode layer in the touch panel, mainly provides electrical pathways and mechanical support. It can be a transparent conductive film, such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a metal mesh structure, such as copper mesh or silver nanowires.

[0050] The second electrode layer, together with the first electrode layer, constitutes the touch electrode layer, used to realize the sensing and transmission of touch signals. The second electrode layer can use the same material and structure as the first electrode layer, or it can use different materials and structures. For example, the first electrode layer is ITO, and the second electrode layer is a metal mesh or ITO.

[0051] The fusible layer carries multiple fusible microbridge structures for capacitance regulation. It is located on the side of the first electrode layer away from the substrate to isolate the fusing operation from the substrate, reduce potential impact on the substrate, and facilitate the input of the fusing signal.

[0052] The capacitance compensation layer carries multiple capacitance compensation structures for providing capacitance compensation. It is located on the side of the microbridge structure layer away from the first electrode layer, which is intended to further isolate the influence of the touch electrode layer on the capacitance compensation structure and ensure the independence and accuracy of the compensation.

[0053] Multiple fusible microbridge structures can be understood as the core components for achieving capacitance adjustment. By changing their conduction state through a fusing operation, the total capacitance of the touch node can be adjusted. Furthermore, these multiple fusible microbridge structures can be made of low-melting-point metal materials.

[0054] Multiple capacitor compensation structures can be understood as components that provide additional capacitance, achieving precise compensation of the capacitance of touch nodes by connecting or disconnecting them from the fusible microbridge structure.

[0055] Specifically, to achieve precise capacitance adjustment, the fusible layer is strategically positioned on the side of the first electrode layer away from the substrate. This arrangement effectively avoids potential interference to the substrate during fusing operations and provides a convenient path for the input of the fusing signal, making selective fusing of multiple fusible microbridge structures possible. Simultaneously, the capacitance compensation layer is positioned on the side of the microbridge structure layer away from the first electrode layer, aiming to further isolate the influence of the touch electrode layer on the capacitance compensation structure, ensuring the independence and accuracy of capacitance compensation.

[0056] The multiple fusible microbridge structures within the fusible layer directly perform the function of adjusting capacitance through fusing, while the multiple capacitor compensation structures within the capacitor compensation layer directly provide the required capacitance adjustment capability. This layered arrangement allows the fusible microbridge structures and capacitor compensation structures to have clearly defined and independent spatial positions, thereby enabling precise control during manufacturing and operation.

[0057] The touch panel provided in this application embodiment, through a layered design of the touch electrode layer, clarifies the spatial relationship between the fusible microbridge structure and the capacitor compensation structure. This structural layout allows the fusing operation to be applied more precisely to the target microbridge structure, avoiding accidental impacts on other areas and thus improving the accuracy of the fusing process. Simultaneously, the capacitor compensation structure is effectively isolated, ensuring the independence and stability of its compensation effect and reducing interference from the touch electrode layer on compensation accuracy. This layered design not only simplifies the alignment and integration difficulties in the manufacturing process but also enables more reliable capacitance compensation throughout the entire lifecycle of the touch panel. It effectively solves the capacitance drift problem caused by factors such as manufacturing processes, environmental changes, and material aging, significantly improving the manufacturing yield and long-term performance stability of the touch panel.

[0058] In one example embodiment, considering the specific process of implementing capacitance compensation, if there is a lack of insulation between the second electrode layer and the capacitance compensation layer, it may lead to electrical short circuits or signal interference, affecting the accuracy and reliability of capacitance compensation. Therefore, the touch panel provided in this application embodiment further includes an insulating layer, specifically as follows: An insulating layer is provided between the second electrode layer and the capacitor compensation layer.

[0059] The insulating layer can be made of polyimide (PI) or photoresist (PR), and its thickness can be 10–20 μm.

[0060] Specifically, the insulating layer can be understood as a material layer with high resistivity. Its main function is to prevent the fuse signal from passing through, thereby achieving electrical isolation, preventing the second electrode layer and the capacitor compensation layer from being directly short-circuited, and ensuring the integrity of the touch electrode signal. In other words, its main function is to isolate and protect the second electrode layer. The secondary function of the insulating layer is physical protection to prevent thermal / mechanical damage from the fuse operation.

[0061] For example, in combination Figure 3 It is understood that the touch panel also includes an insulating layer disposed on the side of the compensating copper foil away from the Sn-Cu microbridge and a cover layer disposed on the side of the upper electrode ITO away from the insulating layer. The cover layer can be made of glass, PET, or plastic, and its thickness can be 0.3–0.7 mm.

[0062] The touch panel provided in this application introduces an insulating layer between the second electrode layer and the capacitor compensation layer. This insulating layer first acts as a physical barrier and dielectric, effectively isolating the second electrode layer from the capacitor compensation layer. This isolation prevents potential direct short circuits between the two layers, ensuring circuit integrity and stability. Second, the presence of the insulating layer significantly reduces the capacitive coupling effect between the two layers, reducing signal crosstalk and noise interference. This ensures more accurate and reliable measurement and adjustment of capacitance values ​​during capacitor compensation operations. Furthermore, when the fusible microbridge structure melts under the action of a fusible signal, local high temperatures and current changes occur. The insulating layer effectively limits the diffusion of this heat and current, protecting other sensitive components in the touch panel from damage, further improving the overall performance and lifespan of the touch panel. Therefore, the insulating layer not only solves potential electrical short circuit and signal interference problems but also improves the compensation accuracy, stability, and reliability of the touch panel.

[0063] In one example embodiment, considering the implementation of the fusible microbridge structure to compensate for the capacitance of the touch node through melting, failure to optimize the dimensional parameters of the fusible microbridge structure may lead to low melting efficiency, insufficient compensation accuracy, or low reliability. Therefore, the touch panel provided in this application optimizes the dimensional parameters of the fusible microbridge structure as follows: The width of the fusible microbridge structure is 10–30 μm, the thickness is 1–2 μm, and the length is 30–100 μm.

[0064] Specifically, for the fusible microbridge structure, its length includes the shell span of 10–70 μm and the contact of the pads on both sides. The total length can be determined according to the gap width between adjacent capacitor compensation structures and the pad overlap requirements.

[0065] For multiple sub-regions connected end to end along the extension direction of the annular fusible region, the ratio of the span l_bridge of the fusible microbridge structure to the length L_cell of the capacitor compensation structure along the perimeter can be 1:50 to 1:20, that is, l_bridge = (0.02~0.05) × L_cell; this ratio ensures that the fusible microbridge structure occupies only a very small area (<5%) of the gap between the corresponding sub-regions, which not only ensures the reliability of the electrical connection, but also ensures that the insulation gap formed after melting does not affect the effective compensation area of ​​the adjacent sub-regions.

[0066] It is important to note that the width of the fusible microbridge structure is a key parameter affecting its resistance, heat dissipation, and fusing uniformity. If the width is too narrow, the fusible microbridge structure may vaporize instantaneously due to excessively high current density under the action of the fusing signal, making the fusing process difficult to control and potentially damaging surrounding structures. If the width is too wide, a larger fusing current and a longer fusing time are required, reducing fusing efficiency and potentially leading to incomplete fusing or excessive residue after fusing. Therefore, limiting its width to the range of 10–30 μm ensures that the fusible microbridge structure has appropriate resistance and heat capacity during fusing, making the fusing process controllable and uniform.

[0067] The thickness of the fusible microbridge structure is directly related to its mechanical strength and thermal response speed when it melts. If the thickness is too small, the fusible microbridge structure may be too fragile and easily damaged during manufacturing or use. It may also break instantly when melting, making it difficult to accurately control the melting amount. If the thickness is too large, it will increase the energy and time required for melting and affect the compensation efficiency. Therefore, the thickness is limited to the range of 1–2 μm to balance the mechanical strength and thermal response characteristics of the fusible microbridge structure.

[0068] The length of the fusible microbridge structure determines the amount of resistance change before and after fusing, thus affecting its contribution to capacitance compensation. If the length is too short, the capacitance change after fusing may be insufficient, making it difficult to achieve precise capacitance compensation. If the length is too long, it will increase the initial resistance of the fusible microbridge structure, which may affect the transmission of touch signals, and the energy and time required for fusing will also increase. Therefore, its length is limited to the range of 30–100 μm to provide sufficient resistance path length to ensure that a predictable and effective capacitance change can be generated when fusing.

[0069] The touch panel provided in this application embodiment ensures that the fusible microbridge structure can be broken uniformly, stably and efficiently when it is broken by precisely defining the width, thickness and length of the fusible microbridge structure, and generates a predictable amount of capacitance change. This significantly improves the accuracy and reliability of capacitance compensation in the touch panel, so that the touch panel can still maintain its touch performance by fine-tuning the capacitance value when used for a long time or facing complex environmental changes, thereby improving the manufacturing yield of touch devices and user experience.

[0070] In one example embodiment, considering the implementation of the fusible microbridge structure for adjusting the capacitance of the touch panel, improper spacing between adjacent microbridge structures may lead to mutual interference of thermal diffusion, signal coupling, or manufacturing errors during fusing, affecting compensation accuracy and panel reliability, and reducing yield. Therefore, the touch panel provided in this application embodiment has a reasonable arrangement of the spacing between adjacent microbridge structures, as follows: The spacing between the fusible microbridge structures in adjacent sub-regions is 50–200 μm.

[0071] The spacing between the fusible microbridge structures in adjacent sub-regions can be understood as the distance between the fusible microbridge structures contained in each of the two adjacent sub-regions within the annular fusible area of ​​the touch panel. This spacing is designed to optimize the spatial layout of the fusible microbridge structures, ensuring that the thermal or electromagnetic effects of a single fusible microbridge structure do not adversely affect adjacent fusible microbridge structures during the fusible operation, thereby achieving thermal isolation and preventing accidental fussing.

[0072] Specifically, when the annular fusible region surrounding a certain touch node is divided into multiple N capacitor compensation structures along its annular circumference, adjacent capacitor compensation structures are electrically connected through fusible microbridge structures. Each capacitor compensation structure corresponds to one fusible microbridge structure, forming a one-to-one control relationship between capacitor compensation structure and fusible microbridge structure. Each capacitor compensation structure-fusible microbridge structure is a sub-region, that is, each annular fusible region can include N sub-regions; N is a positive integer from 2 to 100, and in this embodiment, N=20 is preferred.

[0073] The touch panel provided in this application effectively solves problems such as mutual interference from thermal diffusion, signal coupling, and manufacturing errors that may occur during the fusing operation by precisely defining the spacing between the fusible microbridge structures in adjacent sub-regions. This ensures that when the touch panel is subjected to capacitance compensation, the fusible microbridge structure that needs to be compensated for capacitance can be fused independently and accurately without adversely affecting the adjacent fusible microbridge structures. This not only improves the accuracy and reliability of capacitance compensation and avoids compensation failure or overcompensation due to erroneous fusing, but also optimizes the overall performance and stability of the touch panel.

[0074] In one example embodiment, considering that the fuse signal input section is used to receive a fuse signal to fuse the microbridge structure and thereby adjust the capacitance compensation of the touch node, the fuse signal transmission may be inaccurate due to unstable connection or inaccurate signal source, affecting the reliability of capacitance compensation and the performance stability of the touch panel. Therefore, the touch panel provided in this application provides a driving arrangement for the fuse signal input section included in the fusible microbridge structure, as follows: The fuse signal input section includes a first bonding area and a second bonding area disposed at both ends of the microbridge structure; the first bonding area and the second bonding area are electrically connected to the DAC output terminal of the control chip of the touch panel, and are used to receive the pulse current output by the DAC output terminal, the pulse current being the fuse signal.

[0075] To ensure effective transmission and precise action of the fusible signal, the fusible signal input section can be designed to include a first bonding area and a second bonding area. The first and second bonding areas can be understood as physical interfaces used to establish an electrical connection between the external circuit and the fusible microbridge structure. They can be, for example, metal pads, conductive adhesive connection points, or areas connected by wire bonding, designed to provide stable and reliable electrical contact. The first and second bonding areas are strategically positioned at both ends of the corresponding fusible microbridge structure. This arrangement ensures that the fusible signal can flow directly and efficiently through the fusible microbridge structure, thereby achieving precise local heating and fusing.

[0076] The fuse signal input section can be used to receive the pulse current output from the DAC output terminal. This pulse current serves as the fuse signal, and its parameters (such as pulse width, amplitude, frequency, etc.) can be precisely adjusted according to the material properties of the fusible microbridge structure and the desired fusing effect.

[0077] Specifically, when both the first and second bonding areas are metal pads, the independent pads at both ends of each fusible microbridge structure are connected to the gold fingers on the flexible printed circuit board through a bonding process. Each fusible microbridge structure is connected to the corresponding internal digital-to-analog converter (DAC) output channel of the IC through the gold fingers. The gold fingers are a row of conductive contacts located on the edge of the flexible circuit board, used to realize the electrical connection between the fusible microbridge structure and the corresponding internal DAC output channel of the IC.

[0078] Understandably, the control chip of a touch panel can integrate a multi-channel DAC module, with each channel corresponding to one or a set of fusible microbridge structures. The first and second bonding areas can be designed as micron-sized metal pads, such as gold or copper, and connected to external test equipment or the output pins of the control chip through standard wire bonding processes or probe contact methods.

[0079] For example, when the capacitor compensation layer is specifically a compensation copper foil, and both the first bonding area and the second bonding area are metal pads, it can be referred to Figure 4 The diagram shown illustrates the independent pad + DAC driver connection method. Figure 4 As shown, the gold fingers of a flexible printed circuit (FPC) can be understood as the gold fingers on a flexible printed circuit board. Each pad is 5μm × 50μm in size and is collinear with the FPC gold fingers.

[0080] Depend on Figure 4 It is understandable that when the pulse parameters are set to a single pulse current I_pulse of 1–5 A, a pulse current width t_pulse of 5–20 μs, and a single pulse current energy ≤100 μJ, and without damaging the surrounding ITO electrodes, the driving method of the fusible microbridge structure is independent driving. Each end of the fusible microbridge structure has a 50 µm × 50 µm pad directly bonded to the FPC gold finger. Each end of each fusible microbridge structure has an independent pad directly bonded to the FPC gold finger, corresponding one-to-one with the IC's built-in DAC channel. Each DAC channel independently controls the fusing operation of one fusible microbridge structure, realizing fine adjustment of capacitance at the level of a single sub-region (i.e., the level of a single fusible microbridge structure). No row and column decoding is required, and parallel fusing is possible, making it suitable for narrow bezels or irregularly shaped screens.

[0081] The touch panel provided in this application embodiment has a fuse signal input section that is electrically connected to the DAC output terminal of the control chip of the touch panel through a first bonding area and a second bonding area disposed at both ends of the microbridge structure. It receives the pulse current output by the DAC as a fuse signal, thereby ensuring accurate input and reliable transmission of the fuse signal. This effectively solves the problem of inaccurate fuse due to unstable signal transmission or inaccurate signal source, significantly improving the accuracy and reliability of the fuse operation of the fuselable microbridge structure. This makes the capacitance compensation process of the touch panel more precise and controllable, and ultimately improves the performance stability, touch positioning accuracy and product yield of the touch panel.

[0082] In one example embodiment, considering that improper material selection may lead to unreliable fusing process, unstable compensation effect, or material compatibility issues during the implementation of fusible capacitor compensation using the capacitor compensation structure and fusible microbridge structure, affecting the accuracy of capacitor adjustment and the overall yield of the touch panel, the touch panel provided in this application specifies the materials for the capacitor compensation structure and fusible microbridge structure as follows: The capacitor compensation structure is made of copper foil or aluminum foil, and the fusible microbridge structure is a Sn-Cu microbridge structure.

[0083] The material of the fusible microbridge structure is Sn-Cu alloy (e.g., Sn 60% and Cu 40%). The Sn-Cu alloy has a melting point of 227℃ and a low resistance of 2~3mΩ.

[0084] When the width w_bridge of the fusible microbridge structure is 10–30 μm, the thickness t_bridge is 1–2 μm, and the length is 30–100 μm, it can be fused by continuously applying a 1A pulse current for 10 μs.

[0085] Specifically, when copper foil is used in the capacitor compensation structure, it has excellent conductivity, good ductility and mechanical strength, is easy to process and form through processes such as photolithography and etching, and has relatively low cost. When aluminum foil is used in the capacitor compensation structure, it also has good conductivity, is lightweight and corrosion resistant, and is easy to form the required capacitor compensation structure through processes such as etching.

[0086] When all fusible microbridge structures are Sn-Cu microbridge structures, the Sn-Cu alloy (tin-copper alloy) has a specific melting point range and good electrical properties. Its melting point can be finely adjusted by changing the ratio of tin to copper to adapt to different fusing signal strength and fusing accuracy requirements. Moreover, this Sn-Cu alloy can form a clear fracture upon fusing, avoiding residues or incomplete fusing.

[0087] For example, under the action of a fuse signal (such as a pulse current), the melting of the Sn-Cu microbridge structure leads to the dissolution of the corresponding capacitor compensation structure (such as copper foil material), and the reduction in the area of ​​the capacitor compensation structure leads to a change in the capacitance value of the corresponding touch node.

[0088] The quantitative relationship between the Sn-Cu microbridge structure and the effective area reduction caused by instantaneous thermal migration-alloying in capacitor compensation structures (such as copper foil) is as follows: At 150℃, 2.5×10 4 Under A / cm² and 10 µs pulse conditions, the instantaneous alloying depth of the Sn-Cu microbridge structure for the capacitance compensation structure of copper foil is approximately 3–5 µm. Within this depth, the copper foil and Sn-Cu form a Cu6Sn5+Cu3Sn mixed IMC with a volume expansion coefficient of ≈ 1.1. Therefore, the actual effective thickness reduction of the copper foil is approximately 3–5 µm.

[0089] The dissolution rate Δh (μm) of the copper foil capacitor compensation structure approximately satisfies Δh ≈ k·J·t, k ≈ 1.2 × 10⁻⁶, where k ≈ 1.2 × 10⁻⁶. -4 μm / (A·μs); at this time, J = 2.5×10 4 With an area of ​​A / cm² and a t = 10 μs, Δh ≈ 1.2 × 10⁻⁶.-4 ×2.5×10 4 ×10 ≈3μm, which is consistent with the experimental value.

[0090] When the width of the Sn-Cu microbridge structure is 60 μm and the thickness is 2 μm, the gap area of ​​the capacitor compensation structure of the copper foil material after the Sn-Cu microbridge structure melts is A_gap = w×Δh≈60μm×3μm =180μm², corresponding to a capacitance increment ΔC ≈2.4 fF (experimental calibration); the capacitance of the touch electrode is usually in the pF (picofarad) range, and the fine adjustment accuracy requires the fF (fefad) range.

[0091] It should be noted that when the copper foil is located at the cathode, electrons flow to the solder in the Sn-Cu microbridge structure, increasing the copper foil dissolution rate by approximately 30%; when located at the anode, dissolution is suppressed. Therefore, this application uses a uniform cathode connection to ensure consistent melting point each time.

[0092] For example, for Figure 3 Capacitance compensation can be performed on the touch electrode layer shown to obtain... Figure 5 The diagram shown is a front view of the touch electrode layer after capacitance compensation. Figure 5 As shown, the white sub-region in the red capacitor compensation layer (such as red compensation copper foil) is the copper foil dissolution area, which is also the gap area A_gap of the capacitor compensation structure made of copper foil. Figure 3 The yellow fusible layer (such as the yellow Sn-Cu microbridge structure) in the middle does not conduct electricity through the melting of the Sn-Cu microbridge structure, and is thus... Figure 5 The complete white area in the image (between the compensation copper foil containing the white sub-region and the lower electrode ITO) is shown.

[0093] The touch panel provided in this application utilizes copper or aluminum foil as the capacitor compensation structure. This allows the touch panel to achieve excellent electrical conductivity and mechanical stability, ensuring high efficiency and stability of capacitor compensation, effectively reducing signal loss and preventing compensation deviations caused by material deformation. Simultaneously, the adoption of a Sn-Cu microbridge structure guarantees the reliability and accuracy of the melting process. Under the action of a preset melting signal, the microbridge can melt cleanly and predictably, avoiding problems such as incomplete melting, accidental melting, or material degradation. This significantly improves the accuracy and consistency of the touch panel's capacitor adjustment, thereby improving touch performance and increasing the manufacturing yield of touch devices.

[0094] The panel capacitance compensation method provided in this application will be described in detail below. The panel capacitance compensation method is applied to the touch panel in the foregoing embodiments, and the execution subject of the panel capacitance compensation method is the control chip of the touch panel in the foregoing embodiments.

[0095] To facilitate understanding of the panel capacitance compensation method provided in this application, the following exemplary embodiments will provide a detailed description of the panel capacitance compensation method. It is understood that these exemplary embodiments can be combined with each other, and similar concepts or processes may not be repeated in some embodiments.

[0096] Reference Figure 6 This is a flowchart illustrating the panel capacitance compensation method provided in an embodiment of this application. Figure 6 As shown, the panel capacitance compensation method includes the following steps 101 and 102.

[0097] Step 101: Based on the initial capacitance value and target capacitance value of each touch node in the touch panel, determine the target fusible microbridge structure in the target annular fusible area corresponding to the target touch node; the target touch node is the touch node whose capacitance value needs to be compensated.

[0098] The target capacitance value is the capacitance of each touch node in a touch panel that will not exhibit performance issues such as inaccurate touch position determination or unresponsive touch during long-term use. The target capacitance value can be determined based on the initial capacitance values ​​of all touch nodes in the touch panel. For example, the average of all initial capacitance values ​​can be used as the panel capacitance value to avoid overall deviation by using the average initial capacitance value as a benchmark; alternatively, the target capacitance value for each touch node can be preset according to the touch panel's design specifications or calibration standards.

[0099] It should be noted that for a completed touch panel, the first step is to identify the specific touch nodes in the touch panel that require capacitance compensation, and then further locate the target fusible microbridge structure to be melted within the annular fusible area corresponding to the specific touch node. Specifically, professional capacitance testing equipment can be used to scan each touch node to obtain its initial capacitance value. At the same time, according to the relevant specifications or calibration standards of the touch panel, the target capacitance value of each touch node is set. Then, software algorithms are used to compare the initial capacitance value with the target capacitance value of each touch node, identifying touch nodes whose capacitance deviation exceeds a preset threshold as target touch nodes. Furthermore, based on the capacitance deviation of the target touch nodes and the capacitance adjustment that a single microbridge melt can provide, the number of microbridges that need to be melted is calculated, and the specific target fusible microbridge structure is determined.

[0100] As another implementation, a capacitance detection module can be integrated into the control chip of the touch panel. This module automatically measures and records the initial capacitance value of each touch node upon initial power-on or during periodic calibration. The target capacitance value can be pre-stored in the non-volatile memory of the control chip. When a significant difference is detected between the initial capacitance value and the target capacitance value of a touch node, that touch node is marked as the target touch node. At this point, the control chip can determine the specific microbridge structure to be melted according to a preset melting strategy, that is, determine the target meltable microbridge structure within the target annular meltable region corresponding to the target touch node.

[0101] Step 102: Input a preset pulse current into the fuse signal input section of the target fusible microbridge structure to perform fuse processing on the target fusible microbridge structure, and determine the panel capacitance compensation result of the touch panel based on the fuse processing result.

[0102] The preset pulse current can be a pulse current under temperature limits, such as a preset pulse current of 150℃ and 2.5×10. 2 A pulse current of A / cm².

[0103] Alternatively, the preset pulse current includes pulse parameters such as current intensity, current density, and pulse width. For example, current intensity: I = 2.5 A, based on the electromigration threshold of Sn-Cu alloy, current density J = 2.5 × 10⁴ A / cm²; pulse width: t = 10 μs, energy E = I²Rt = 2.5² × 2 × 10⁴ A / cm²; -3 ×10×10 -6 = 125μJ, which meets the safety limit of ≤100μJ by 1.25 times (achieved by optimizing the contact resistance to 2 mΩ, while the original 3 mΩ exceeded the limit of 187.5μJ); Polarity: the copper foil is connected to the cathode and the Sn-Cu microbridge structure is connected to the anode. The electron wind effect is used to accelerate the migration of Cu atoms to the Sn-Cu microbridge structure side, promote the rapid formation of Cu6Sn5 intermetallic compound, and increase the effective thickness reduction rate of the copper foil by about 30% S4.5.3.

[0104] It should be noted that, as the core operation for actually performing capacitance compensation, the control chip can apply a specific electrical signal (such as a preset pulse current) to the selected target fusible microbridge structure, causing it to melt and thus changing the total capacitance of the target touch node. Simultaneously, the melting process is monitored and the result is judged to ensure the effectiveness and accuracy of the compensation. Specifically, an external programmer or testing device can be connected to the DAC output of the control chip built into the touch panel to output a preset pulse current. This preset pulse current is applied to the target fusible microbridge structure through the melting signal input section (e.g., composed of a first bonding area and a second bonding area). Since the target fusible microbridge structure is made of a fusible material, it will melt when the heat generated by the preset pulse current reaches its melting point. After the target fusible microbridge structure melts, the success of the melting can be determined by measuring the resistance value across the target fusible microbridge structure. Based on the success or failure of the melting and the number of melted target fusible microbridge structures, the panel capacitance compensation result of the touch panel can be calculated.

[0105] As another implementation, a fuse driver module can be integrated into the control chip of the touch panel. This module can precisely control the DAC output to generate a preset pulse current based on the received current output command. When a target fuseable microbridge structure that needs to be fused is identified, the fuse driver module is activated and sends the preset pulse current to the corresponding fuse signal input. During or after the preset pulse current, the control chip can switch to resistance measurement mode and measure the resistance change of the microbridge using its internal ADC. If the resistance value increases significantly, the fuse is considered to have been successfully fused. Based on the number of successfully fused target fuseable microbridge structures, the capacitance model of the touch node can be updated, and the panel capacitance compensation result can be output.

[0106] The panel capacitance compensation method provided in this application accurately determines the target touch node to be compensated and its corresponding target fusible microbridge structure based on the initial capacitance and target capacitance of each touch node in the touch panel, thus achieving precise positioning of capacitance deviation. Furthermore, by inputting a preset pulse current to the fusible signal input section of the target fusible microbridge structure to perform fusing processing, and determining the panel capacitance compensation result based on the fusing processing result, the touch panel can dynamically adjust the capacitance value of the touch nodes according to actual needs after manufacturing or during use. This achieves the purpose of completing capacitance compensation in one go and instantly, not only improving the yield of the touch panel but also giving it the ability to resist environmental changes and aging effects during long-term use, ensuring the accuracy and stability of touch positioning, significantly improving the user experience, and avoiding performance problems such as touch insensitivity, touch point offset, or false triggering.

[0107] Based on the above Figure 6In one example embodiment of the method shown, step 102 involves inputting a preset pulse current to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure, and determining the panel capacitance compensation result of the touch panel based on the fuse-breaking process result. The specific process in this embodiment can be achieved through… Figure 7 Steps 201 and 202 shown are implemented.

[0108] Step 201: During the first duration, a preset pulse current is continuously input to the fuse signal input section of the target fusible microbridge structure, and during the second duration after the input of the preset pulse current ends, the microbridge resistance measurement mode is entered, and the fuse processing result of the target fusible microbridge structure is determined based on the current resistance value of the target fusible microbridge structure.

[0109] Step 202: If the fusing process result indicates that the target fusing microbridge structure has been successfully fusing, then obtain the current capacitance value of each touch node in the touch panel, and determine the panel capacitance compensation result based on multiple current capacitance values.

[0110] Specifically, a 2.5 A pulse current of 10 μs is applied to the fusing signal input section of the target fusible microbridge structure (Sn-Cu alloy microbridge structure, 2-3 mΩ) through probe-pad contact. The electron wind effect induces copper foil-solder alloying and thermal migration, causing the target fusible microbridge structure to physically break. Within 20 μs after the preset pulse current ends, the system switches to a four-wire 1mA DC detection mode to measure the resistance of the target fusible microbridge structure. The current resistance value of the target fusible microbridge structure determines whether it has been successfully fusing. That is, the system judges whether the current resistance of the target fusible microbridge structure changes abruptly (e.g., increases) within a certain period of time. This abrupt change occurs within 8-10 μs after the preset pulse current is applied, and the resistance confirmation measurement is completed within 20 μs after the preset pulse current ends.

[0111] For example, when the first duration is 10μs and the second duration is 20μs, the circuit breaker timing sequence is as follows: (1) t=0~10μs: Input a 2.5A pulse current into the fuse signal input section of the target fusible microbridge structure, and monitor the resistance at a sampling rate of 10MHz simultaneously; (2) t=8~10μs: The target fusible microbridge structure melts, and the resistance rises sharply from 5mΩ to 1MΩ within <1μs; (3) t=10~30μs: The preset pulse current ends the input. At this time, a 1mA detection current is applied to the fuse signal input part of the target fusible microbridge structure (Sn-Cu alloy microbridge structure, 2-3 mΩ). If the current resistance value of the target fusible microbridge structure is determined to be >1MΩ within 20μs, it can be determined that the target fusible microbridge structure has been successfully fused.

[0112] (4) If the current resistance value of the target fusible microbridge structure does not reach >1MΩ within 30μs, it is determined that the target fusible microbridge structure has not been successfully fused.

[0113] Based on this, when it is determined that the target fusible microbridge structure has been successfully fused, the compensation capacitance verification process can be initiated. For example, the current capacitance value of each touch node in the touch panel is rescanned. If each current capacitance value is the target capacitance value, or the deviation of each current capacitance value relative to the target capacitance value is within the preset deviation range, then the capacitance value of the touch panel is determined to have been successfully compensated. Conversely, if at least one of the multiple current capacitance values ​​has not reached the target capacitance value, or the deviation of each current capacitance value relative to the target capacitance value is not within the preset deviation range, then the capacitance value of the touch panel is determined to have not been successfully compensated.

[0114] For example, if multiple current capacitance values ​​all reach 13.4pF, or if the deviation of each current capacitance value from the target capacitance value is within a preset deviation range of -0.8% to +0.8%, then it is determined that the capacitance of the touch panel has been successfully compensated.

[0115] It should be noted that when there are multiple target fusible microbridge structures and some of them fail to fuse, the number of failed fusible microbridge structures within the target annular fusible region where the multiple target fusible microbridge structures are located can be counted. If the number of failed fusible microbridge structures is greater than a preset threshold, the corresponding target annular fusible region is marked as a partially failed region, and the actual maximum capacitance compensation amount ΔC_max(i) = n_actual(i)×ΔC_unit (ΔC_unit = 0.12pF is the single microbridge capacitance adjustment amount) of this partially failed region is recorded and uploaded to the control chip to store the compensation limit of this partially failed region.

[0116] Furthermore, when there are multiple target touch nodes, after all target fusible microbridge structures have been successfully fused, the target fusible microbridge structures that have been successfully fused in the annular fusible area of ​​each target can be summarized, and the actual capacitance compensation amount can be calculated for subsequent capacitance re-inspection and comparison.

[0117] For example, when the number of failed fusible microbridge structures is greater than 4, the corresponding target annular fusible region can be marked as a partially failed region, and the number of failed fusible microbridge structures can include spare fusible microbridge structures, and the number of failed fusible microbridge structures accounts for 20% of the number of fusible microbridge structures in the target annular fusible region.

[0118] The panel capacitance compensation method provided in this application ensures sufficient supply of fusing energy by continuously inputting a preset pulse current during the first duration; and provides real-time and reliable fusing status feedback by entering a microbridge resistance measurement mode during the second duration and determining the fusing result based on the current resistance value. This feedback mechanism makes the compensation process more intelligent and automated. Once successful fusing is confirmed, the current capacitance value of the touch node is immediately acquired and evaluated, thereby enabling timely and accurate determination of the panel capacitance compensation result. This significantly improves the success rate and efficiency of touch panel capacitance compensation, and reduces production costs and rework rates.

[0119] In one example embodiment, the panel capacitance compensation result of the touch panel is determined based on the fuse-breaking process in step 102. The specific process can also be implemented through the following steps in this embodiment.

[0120] If the fusing process indicates that the target fusible microbridge structure has not been successfully fused, a preset pulse current is input to the fusing signal input section of the backup fusible microbridge structure in the target annular fusible area corresponding to the target touch node, and fusing process is performed on the backup fusible microbridge structure.

[0121] The number of fusible microbridge structures contained in the target annular fusible region is the sum of the number of spare fusible microbridge structures and the number of target fusible microbridge structures.

[0122] Specifically, for all fusible microbridge structures within the target annular fusible region corresponding to the target touch node, a preset proportion of fusible microbridge structures can be used as target fusible microbridge structures, and the remaining fusible microbridge structures can be used as backup fusible microbridge structures. In this way, when the target fusible microbridge structure is not successfully fused (its resistance value does not increase sharply to 1 MΩ within 10μs after applying a 2.5A pulse current for 10μs), the backup fusible microbridge structure within the target annular fusible region corresponding to the target touch node can be activated, and a preset pulse current can be input to the fusible signal input section of the backup fusible microbridge structure to perform fusible processing on the backup fusible microbridge structure.

[0123] The panel capacitance compensation method provided in this application first performs fusing processing by inputting a preset pulse current to the target fusible microbridge structure in the target annular fusible area corresponding to the target touch node during capacitance compensation. After the fusing processing is completed, it automatically enters the microbridge resistance measurement mode. If it is determined from the current resistance value of the target fusible microbridge structure that the target fusible microbridge structure has not been successfully fused, it automatically switches to the backup mechanism to perform fusing processing on the backup fusible microbridge structure. This design ensures that even if the main fusing path fails, there is still a backup path to complete the capacitance compensation, thereby avoiding compensation interruption. At the same time, the target annular fusible area is designed to contain a sufficient number of fusible microbridge structures, providing necessary redundancy resources for the subsequent capacitance compensation process, significantly enhancing fault tolerance and compensation success rate, effectively compensating for the impact of the main structure fusing failure, ensuring the smooth completion of panel capacitance compensation, and thus improving the stability and manufacturing yield of the touch panel.

[0124] Based on the above Figure 7 In one example embodiment of the method shown, step 202 determines the panel capacitance compensation result based on multiple current capacitance values. The specific process of this method in this embodiment can be described by... Figure 8 Steps 301 and 302 shown are implemented.

[0125] Step 301: Determine the capacitance compensation difference of the touch panel based on multiple current capacitance values ​​and the target capacitance value.

[0126] Step 302: If the capacitance compensation difference is within the preset difference range, or if each current capacitance value is within the preset capacitance range, then the panel capacitance compensation result is determined to be successful.

[0127] Specifically, when it is determined that the target fusible microbridge structure has been successfully fused based on its current resistance value, a thermal equilibrium waiting mode can be entered. This mode ensures that the capacitor compensation layer is thermally stable after the fusion process is completed and the touch panel temperature drops to its pre-fusion temperature. For example, the thermal equilibrium waiting mode can ensure a 2-second wait after the fusion process is completed, thereby ensuring the thermal stability of the capacitor compensation layer and allowing the touch panel temperature to decrease from its peak value of <60°C to room temperature of 25°C.

[0128] Then, rescan each touch node in the touch panel to obtain the current capacitance value of each touch node. Calculate the capacitance compensation difference of the touch panel based on multiple current capacitance values ​​and the target capacitance value. For example, calculate the capacitance compensation difference δ_verify using equation (1).

[0129] δ_verify = (C_verify_max - C_verify_min) / C_target×100% (1) In equation (1), C_verify_max represents the maximum capacitance value among multiple current capacitance values, C_verify_min represents the minimum capacitance value among multiple current capacitance values, and C_target represents the target capacitance value.

[0130] At this point, it is determined whether the capacitance compensation difference is within the preset difference range, or whether each current capacitance value belongs to the preset capacitance range. If the capacitance compensation difference is within the preset difference range, or each current capacitance value belongs to the preset capacitance range, then the panel capacitance compensation result is determined to be successful.

[0131] For example, if the initial capacitance difference of the touch panel before capacitance compensation is ≥18% (due to process fluctuations, edge effects, and stress distribution), and the capacitance compensation difference after capacitance compensation is ≤±1%, the capacitance compensation result can be determined to be successful. Alternatively, if the touch panel detects that the current capacitance of each touch node is within the preset capacitance range of 13.29pF to 13.51pF after capacitance compensation, the capacitance compensation result can also be determined to be successful.

[0132] It should be noted that the panel capacitance compensation can also be determined by calculating the fuse control accuracy and comparing it with the preset accuracy. In fact, if the current capacitance values ​​of multiple touch nodes are all compensated to the target capacitance value, or each current capacitance value is within the preset capacitance value range, the deviation of each current capacitance value from the target capacitance value is within the preset deviation range, or the capacitance compensation difference is within the preset difference range, the calculated fuse control accuracy will necessarily be within the preset accuracy range. For example, the preset accuracy is ±5%.

[0133] The panel capacitance compensation method provided in this application introduces refined judgment logic. After performing the fuse-breaking process of the target fuselable microbridge structure, it first calculates the capacitance compensation difference of the touch panel based on the current capacitance value of each touch node in the touch panel and the preset target capacitance value. This difference quantifies the deviation between the actual capacitance state after compensation and the ideal state, providing an objective data basis for subsequent judgments. To ensure the comprehensiveness and reliability of the compensation, it avoids situations where the overall difference is small but individual nodes still have large deviations by checking whether the capacitance compensation difference falls within the preset difference range or whether the current capacitance value of each touch node falls within the preset capacitance value range. This judgment mechanism is closely integrated with the aforementioned fuse-breaking process to form a closed-loop compensation and verification process, ensuring that each compensation operation can be accurately evaluated. This effectively avoids performance problems caused by inaccurate or unverifiable compensation results, making the capacitance compensation process of the touch panel more intelligent and reliable, and significantly improving the accuracy of compensation and the final product manufacturing yield.

[0134] Based on the above Figure 6 In one example embodiment of the method shown, step 102 involves inputting a preset pulse current to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure. The specific process in this embodiment can be described by... Figure 9 Steps 401 and 402 shown are implemented.

[0135] Step 401: When there are multiple target annular fusible regions and multiple target fusible microbridge structures in each target annular fusible region, the multiple target annular fusible regions are divided into multiple region groups, and all target annular fusible regions in each region group are distributed according to a preset distribution method.

[0136] Step 402: According to the preset fusing rules, simultaneously input a preset pulse current to the fusing signal input unit of the target fusible microbridge structure in each region group, and perform fusing processing on all target fusible microbridge structures in multiple region groups.

[0137] Among them, the preset circuit breaker rules include parallel circuit breaker between groups, serial circuit breaker within a group, and serial circuit breaker of microbridges within a region.

[0138] Specifically, if the number of target touch nodes is m, then the m target annular fusible areas are divided into p region groups. Each region group includes (m / p) target annular fusible areas, and the (m / p) target annular fusible areas in each region group are distributed according to a preset distribution to avoid adjacent target annular fusible areas generating heat at the same time. Each region group corresponds to one independent DAC channel to achieve hardware parallelism.

[0139] At this point, a preset pulse current can be simultaneously input to the fuse signal input section of the target fusible microbridge structure in each region group. Based on the preset fuse rule, the DAC channels of p region groups are simultaneously activated, each executing the fuse of the target annular fusible region within its group. This achieves serial fuse execution of (m / p) target annular fusible regions within a single region group, avoiding thermal superposition; and serial fuse execution of multiple target fusible microbridge structures within a single (m / p) target annular fusible region, avoiding energy concentration. When the quotient of (m / p) is not a positive integer, it is rounded down.

[0140] For example, when there are 300 touch nodes on the touch panel, m=120, and p=8, it can be determined that the target annular fusible areas corresponding to 120 target touch nodes with high capacitance values ​​need to be melted, while the annular fusible areas corresponding to the remaining 180 touch nodes do not need compensation. In this case, the 120 target annular fusible areas are divided into 8 region groups, each containing 15 target annular fusible areas distributed in a dispersed manner, with each region group corresponding to one DAC channel. Based on this, the melting process can be as follows: the DAC channels of the 8 region groups are activated simultaneously, each melting the target annular fusible areas within its region group; the 12 target annular fusible areas within a single region group are melted serially to avoid heat accumulation; and multiple target fusible microbridge structures within a single target annular fusible area are melted serially to avoid heat concentration.

[0141] The operating cycle of a single fusible microbridge structure can be obtained by summing the contact detection time, pulse application time, resistance confirmation time, and thermal relaxation time. For example, the operating cycle of a single fusible microbridge structure = contact detection time 20μs + pulse application time 10μs + resistance confirmation time 20μs + thermal relaxation time 500μs = 550μs. The average time required for a single target annular fusible region to melt 10 target fusible microbridge structures is: 10 × 550μs = 5.5 ms. The average time required for a single target annular fusible region to melt 15 target annular fusible regions within a single region group is: 15 × 5.5 ms = 82.5 ms.

[0142] When there are 120 target touch nodes with relatively high capacitance on the touch panel, the reason why the number of area groups is preferably 8 is that the 8 area groups directly correspond to the 8 DAC output channels of the control chip, and each area group occupies 1 DAC output channel to achieve hardware parallelism; and, to achieve a balance between parallel efficiency (total time of 82.5ms) and thermal safety (sufficient spacing).

[0143] The number of region groups, p, can be determined by the number of DAC output channels built into the control chip, the production line cycle time, and the thermal design. The preferred value of p is 4 to 16. In this embodiment, p=8 and (m / p)=15, which achieves the optimal balance between 8 DAC output channels, a total time of 82.5ms, and a 2-pitch thermal spacing. Other p values ​​(such as 4, 12, 16, etc.) only need to adjust the number of target annular fusible regions (m / p) in each region group and adjust the spacing requirements accordingly.

[0144] The panel capacitance compensation method provided in this application significantly shortens the overall compensation time by dividing multiple target annular fusible regions into region groups and employing a parallel fusing strategy between groups. This effectively solves the problem of low efficiency in traditional one-by-one fusing methods. Furthermore, by combining the rules of serial fusing within a group and serial fusing of microbridges within a group, each fusing process can be precisely controlled, avoiding problems such as local overheating, uneven fusing, or fusing failure that may occur due to large-scale parallel operations. This ensures that each target fusible microbridge structure can be accurately fusing, thereby improving the accuracy and consistency of panel capacitance compensation. This layered, parallel, and serial fusing strategy enables touch panels to reliably perform capacitance fine-tuning during subsequent use, effectively improving the manufacturing yield and long-term stability of touch devices.

[0145] Based on the above Figure 1 In one example embodiment of the method shown, step 101 determines the target fusible microbridge structure in the target annular fusible region corresponding to the target touch node based on the initial capacitance value and the target capacitance value of each touch node in the touch panel. The specific process in this embodiment can be achieved through… Figure 10 Steps 501 and 502 shown are implemented.

[0146] Step 501: Determine the capacitance deviation of each touch node based on the initial capacitance value and the target capacitance value of each touch node, and identify the touch nodes with capacitance deviations greater than the preset capacitance threshold as target touch nodes.

[0147] Step 502: Determine the target fusible microbridge structure in the target annular fusible region based on the preset single microbridge capacitance adjustment amount, the initial capacitance of the target touch node, and the target capacitance.

[0148] Among them, the single microbridge capacitance adjustment amount is the capacitance change caused when a single target fusible microbridge structure is successfully fused.

[0149] Specifically, after the touch panel is manufactured, each touch node in the touch panel can be scanned to obtain the initial capacitance value of each touch node. For example, the control chip (such as the touch IC) can be pre-set to a power-on self-capacitance scanning mode. When the touch panel is powered on, the control chip detects the capacitance value of each touch node. Each touch node is sampled multiple times (e.g., 10 times), and the average is taken to obtain the initial capacitance value of each touch node. This initial capacitance value matrix is ​​then recorded. The i-th initial capacitance value in the initial capacitance value matrix can be denoted as C_init(i), where the maximum value of i corresponds one-to-one with the number of touch nodes in the touch panel. For example, when the touch panel contains 300 touch nodes, the initial capacitance value matrix will contain 300 initial capacitance values. For the initial capacitance value matrix, statistical parameters such as the initial average capacitance value, initial maximum capacitance value, initial minimum capacitance value, and initial capacitance value difference can be calculated.

[0150] For example, when the initial capacity matrix contains 300 initial capacity values, the calculation process of each statistical parameter is as shown in equations (2) to (5).

[0151] The initial average capacity C_avg = (ΣC_init(i)) / 300 (2) Initial maximum capacity C_max = max(C_init(i))(3) Initial minimum capacity C_min = min(C_init(i)) (4) Initial capacitance difference δ_init = (C_max - C_min) / C_avg × 100% (5) At this point, the capacitance compensation amount ΔC_need(i) of each touch node is calculated based on the initial capacitance value C_init(i) and the target capacitance value C_target of each touch node. The touch nodes with capacitance compensation amounts greater than the preset capacitance threshold are identified as touch nodes with excessive capacitance. The touch nodes with excessive capacitance are the touch nodes whose capacitance needs to be reduced, and the touch nodes with excessive capacitance are the target touch nodes.

[0152] For example, when the preset capacitance threshold is 0, the process for determining a touch node with a high capacitance value is: ΔC_need(i) = C_init(i) - C_target > 0, requiring reduction of the copper foil area; conversely, the process for determining a touch node with a high capacitance value is: ΔC_need(i) ≤ 0, requiring no compensation (maintaining the initial state). Specifically, touch nodes with a capacitance value greater than 0.134pF (i.e., > 1%) can be selected from multiple capacitance compensation values ​​and set as the target touch nodes for capacitance reduction.

[0153] For multiple fusible microbridge structures within the target annular fusible region corresponding to the target touch node, the target fusible microbridge structure within the target annular fusible region corresponding to the target touch node can be calculated based on the single microbridge capacitance adjustment amount, the initial capacitance value of the target touch node, and the target capacitance value. For example, first calculate the target capacitance value deviation between the initial capacitance value and the target capacitance value of the target touch node, and then divide the target capacitance value deviation by the single microbridge capacitance adjustment amount to obtain the quotient value, which is used as the multiple target fusible microbridge structures within the target annular fusible region.

[0154] It should be noted that the capacitance adjustment amount ΔC_unit of a single microbridge can be derived in advance based on the relationship between the fuse area and the capacitance value. Specifically, the formula for calculating the capacitance C of a parallel plate is C = ε0ε r In the case of A / d, if the vacuum permittivity ε0 is 8.85 × 10⁻⁶ 12 F / m, relative permittivity ε r When the air gap is 1 and the inter-board spacing d is 10μm for the touch node gap, the reduction in copper foil area ΔA results in a capacitance change of approximately ε0ε. r ΔA / d.

[0155] At this point, the control area of ​​a single fusible microbridge structure is ΔA = 0.2 mm² = 0.2 × 10⁻⁶. -6 m², theoretical value of single microbridge capacitance adjustment = (8.85 × 10) -12 ) 1 (0.2×10 -6 ) / (10×10 -6 = 0.177 fF, after correction, we can obtain the single microbridge capacitance adjustment ΔC_unit = 0.12 pF = 120 fF.

[0156] For example, when the capacitance adjustment of a single microbridge is ΔC_unit = 0.12 pF, the target touch nodes are 120 (for 300 touch nodes, about 40% of the touch nodes have high capacitance), the target touch node corresponds to a target annular fusible area containing 20 fusible microbridge structures, and 10 target fusible microbridge structures are melted within the target annular fusible area, the maximum capacitance adjustment of a single target annular fusible area can be determined to be 20 × 0.12 pF = 2.4 pF, and the number of target fusible microbridge structures that need to be melted for 120 target touch nodes is 120 × 10 = 1200.

[0157] Furthermore, it should be noted that if the initial maximum capacitance C_max = 15.8 pF (+18%) and the initial minimum capacitance C_min = 11.2 pF (-16%) are caused by process fluctuations, then the initial capacitance difference δ_init = (15.8-11.2) / 13.4 = 34.3% peak-to-peak value, which is ±17.15% (take ±18%).

[0158] The panel capacitance compensation method provided in this application can accurately identify touch nodes that need capacitance compensation, avoiding unnecessary processing of nodes that do not need compensation. At the same time, by quantitatively calculating the number of fusible microbridge structures that need to be fused, the accuracy of compensation is ensured, effectively avoiding the problems of insufficient or excessive compensation. This significantly improves the accuracy and efficiency of touch panel capacitance compensation, thereby improving the yield and performance stability of touch devices and solving the problem of low yield caused by the inability to fine-tune the capacitance of the touch panel during product use in traditional solutions.

[0159] Based on the above Figure 7 In one example embodiment of the method shown, step 202 determines the fusing result of the target fusible microbridge structure based on its current resistance value. This determination process, in this embodiment, can be achieved through… Figure 11 Steps 601 and 602 shown are implemented.

[0160] Step 601: If the current resistance value exceeds the preset resistance value within the third time period, then the fusing process result indicates that the target fusing microbridge structure has been successfully fusing.

[0161] Step 602: If the current resistance value does not exceed the preset resistance value within the third time period, then the fusing process result indicates that the target fusing microbridge structure has not been successfully fusing.

[0162] The third duration is the sum of the first and second durations. For example, when the first duration is 10 μs and the second duration is 20 μs, the third duration is 30 μs.

[0163] Specifically, a preset pulse current is continuously input to the fuse signal input section of the target fusible microbridge structure for a first duration (e.g., 10 μs). After the input of the preset pulse current to the target fusible microbridge structure ends, the system switches to a four-wire 1mA DC detection mode for a second duration (e.g., 20 μs) to measure the current resistance value of the target fusible microbridge structure and confirm whether the current resistance value has changed abruptly compared to its initial resistance value. This abrupt change occurs within 8 to 10 μs after the preset pulse current is applied, and the resistance confirmation measurement is completed within 20 μs after the preset pulse current is applied.

[0164] Therefore, it can be understood that if the current resistance value does not suddenly increase from the initial resistance value to the preset resistance value within the third time period, the target fusible microbridge structure is determined not to have been successfully fused. For example, if the current resistance value of the target fusible microbridge structure suddenly increases from the initial resistance value (<5 mΩ) to >1 MΩ within the third time period of 30 μs, the target fusible microbridge structure is determined to have been successfully fused. Conversely, if the current resistance value suddenly increases from the initial resistance value to exceed the preset resistance value within the third time period, the target fusible microbridge structure is determined to have been successfully fused.

[0165] The panel capacitance compensation method provided in this application, by setting a third time period including pulse input duration and resistance confirmation duration, and comparing the current resistance value of the target fusible microbridge structure with a preset resistance value within this third time period, can effectively avoid misjudgment caused by the dynamic nature of the fusing process or improper measurement timing, ensuring accurate identification of the microbridge fusing state, thus providing a solid foundation for subsequent panel capacitance compensation, significantly improving the accuracy and reliability of touch panel capacitance compensation, avoiding compensation deviation caused by incorrect fusing results, and thus ensuring the stability and touch performance of the touch panel.

[0166] It should be noted that although the operations of the method of this application are described in a specific order in the accompanying drawings, this does not require or imply that these operations must be performed in that specific order, or that all the operations shown must be performed to achieve the desired result. On the contrary, the steps depicted in the flowchart can be performed in a different order. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step, and / or one step may be broken down into multiple steps.

[0167] The following is for reference. Figure 12 The document illustrates a display device suitable for implementing embodiments of the present application. The display device includes a processing unit 701, a display unit 702, and a storage unit 703. The storage unit 703 stores a program executable by a processor; the processing unit 701 executes the program stored in the storage unit 703 to achieve executable... Figure 6 The steps of the method shown are illustrated; display unit 702 displays. Figure 6 The execution result of the method shown. For example, the processing unit 701 can specifically be a control chip.

[0168] On the other hand, this application also provides a computer-readable storage medium, which may be included in the computer device described in the above embodiments, or may exist independently and not assembled into the computer device. The aforementioned computer-readable storage medium stores one or more programs that, when used by one or more processors, execute the methods described in this application. For example, it may execute... Figure 6 The steps of the method shown are as follows.

[0169] This application provides a computer program product including instructions that, when executed, cause the method described in this application to be performed. For example, it can execute... Figure 6 The steps of the method shown are as follows.

[0170] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0171] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A touch panel, characterized in that, include: A substrate and a touch electrode layer disposed on the substrate. The touch electrode layer includes multiple touch nodes. Each touch node has an annular fusible region around its periphery. Each annular fusible region includes multiple sub-regions. The multiple sub-regions are connected end to end along the annular fusible region. Each sub-region includes a capacitor compensation structure and a fusible microbridge structure connected to the capacitor compensation structure. The fusible microbridge structure includes a fusible signal input section. The fusible microbridge structure is a fusible material under the action of the fusible signal, and the melting point of the fusible material is greater than or equal to the melting point of the capacitor compensation structure.

2. The touch panel according to claim 1, characterized in that, The touch electrode layer includes a first electrode layer, a second electrode layer, a fusible layer disposed on the side of the first electrode layer away from the substrate, and a capacitance compensation layer disposed on the side of the microbridge structure layer away from the first electrode layer. The fusible layer includes a plurality of fusible microbridge structures, and the capacitance compensation layer includes a plurality of capacitance compensation structures.

3. The touch panel according to claim 2, characterized in that, An insulating layer is provided between the second electrode layer and the capacitor compensation layer.

4. The touch panel according to claim 1, characterized in that, The fusible microbridge structure has a width of 10–30 μm, a thickness of 1–2 μm, and a length of 30–100 μm.

5. The touch panel according to claim 1, characterized in that, The spacing between the fusible microbridge structures in adjacent sub-regions is 50–200 μm.

6. The touch panel according to claim 1, characterized in that, The fuse signal input section includes a first binding area and a second binding area disposed at both ends of the fuselable microbridge structure; the first binding area and the second binding area are electrically connected to the DAC output terminal of the control chip of the touch panel, and are used to receive the pulse current output by the DAC output terminal, wherein the pulse current is the fuse signal.

7. The touch panel according to claim 1, characterized in that, The capacitor compensation structure is made of copper foil or aluminum foil, and the fusible microbridge structure is a Sn-Cu microbridge structure.

8. A panel capacitance compensation method, characterized in that, Applied to a touch panel according to any one of claims 1 to 7, the method comprises: Based on the initial capacitance value and target capacitance value of each touch node in the touch panel, the target fusible microbridge structure in the target annular fusible region corresponding to the target touch node is determined; the target touch node is the touch node whose capacitance value needs to be compensated. A preset pulse current is input to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure, and the panel capacitance compensation result of the touch panel is determined based on the fuse-breaking process result.

9. The method according to claim 8, characterized in that, The step of inputting a preset pulse current to the fuse signal input section of the target fusible microbridge structure to perform a fuse-breaking process on the target fusible microbridge structure, and determining the panel capacitance compensation result of the touch panel based on the fuse-breaking process result, includes: During the first duration, a preset pulse current is continuously input to the fuse signal input section of the target fusible microbridge structure, and during the second duration after the input of the preset pulse current ends, the microbridge resistance measurement mode is entered, and the fuse processing result of the target fusible microbridge structure is determined based on the current resistance value of the target fusible microbridge structure. If the fusing process result indicates that the target fusible microbridge structure has been successfully fused, then the current capacitance value of each touch node in the touch panel is obtained, and the panel capacitance compensation result is determined based on the multiple current capacitance values.

10. The method according to claim 9, characterized in that, The method further includes: If the fusing process result indicates that the target fusible microbridge structure has not been successfully fused, then a preset pulse current is input to the fusing signal input section of the backup fusible microbridge structure in the target annular fusible region corresponding to the target touch node, and the fusing process is performed on the backup fusible microbridge structure. The number of fusible microbridge structures contained in the target annular fusible region is the sum of the number of the spare fusible microbridge structures and the target fusible microbridge structures.

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