Metasurface array structure

Abstract

This application provides a metasurface array structure, relating to the field of communication technology. The metasurface array structure includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, and a phase-shifting network layer. The first metal layer includes multiple array units, each including a reflective patch. The first dielectric layer is located on one side of the first metal layer; the second metal layer is located on one side of the first dielectric layer; the second dielectric layer is located on one side of the second metal layer; the phase-shifting network layer is located on one side of the second dielectric layer, and includes a first phase-shifting network structure and a second phase-shifting network structure. The first and second phase-shifting network structures are electrically connected to the reflective patches, respectively. In this way, not only can bandwidth and linear modulation be achieved over a wider frequency band, but also dual-polarization independent operation can be achieved, effectively reducing the size of the array units, improving the scanning capability of the array units, and avoiding interference from the first and second phase-shifting network structures to the reflective patches.

Description

Technical Field

[0001] This application relates to the field of communication technology, and more specifically, to a metasurface array structure. Background Technology

[0002] Metasurface arrays are composed of artificially designed periodic units, with dynamically adjustable electronic components added within these units. This allows for dynamic control of parameters such as amplitude, phase, and polarization of incident electromagnetic waves, altering the superposition of electromagnetic waves in different spatial directions, and ultimately achieving active optimization and control of the electromagnetic environment.

[0003] However, traditional metasurface arrays have a narrow phase modulation band and poor linearity. Summary of the Invention

[0004] In order to at least overcome the above-mentioned shortcomings in the prior art, the purpose of this application is to provide a metasurface array structure.

[0005] In a first aspect, embodiments of this application provide a metasurface array structure, the metasurface array structure comprising: A first metal layer, comprising a plurality of array units arranged in an array, wherein each array unit includes a reflective patch; A first dielectric layer located on one side of the first metal layer; A second metal layer located on the side of the first dielectric layer away from the first metal layer; The second dielectric layer is located on the side of the second metal layer away from the first dielectric layer; A phase-shifting network layer is located on the side of the second dielectric layer away from the second metal layer. The phase-shifting network layer includes a plurality of first phase-shifting network structures and a plurality of second phase-shifting network structures. The first phase-shifting network structures and the second phase-shifting network structures are electrically connected to the reflective patch through a first connection hole and a second connection hole, respectively. The first connection hole and the second connection hole at least penetrate the first dielectric layer, the second metal layer and the second dielectric layer.

[0006] In one possible implementation, the first phase-shifting network structure includes a first bias line extending along a second direction and a first phase-shifting structure connected to the first bias line. The first phase-shifting structure includes a first DC blocking capacitor, a second DC blocking capacitor, a first electrically tunable element, and a first branch line structure. One end of the first DC blocking capacitor is connected to the first branch line structure, and the other end of the first DC blocking capacitor is connected to the reflective patch through the first connection hole. One end of the second DC blocking capacitor is connected to the first branch line structure, and the other end of the second DC blocking capacitor is connected to the second metal layer. One end of the first electrically tunable element is connected to the first branch line structure, and the other end of the first electrically tunable element is connected to the second metal layer. The second phase-shifting network structure includes a second bias line extending along the second direction and a second phase-shifting structure connected to the second bias line. The second phase-shifting structure includes a third DC blocking capacitor, a fourth DC blocking capacitor, a second electronically tunable element, and a second branch line structure. One end of the third DC blocking capacitor is connected to the second branch line structure, and the other end of the third DC blocking capacitor is connected to the reflective patch through the second connection hole. One end of the fourth DC blocking capacitor is connected to the second branch line structure, and the other end of the fourth DC blocking capacitor is connected to the second metal layer. One end of the second electronically tunable element is connected to the second branch line structure, and the other end of the second electronically tunable element is connected to the second metal layer.

[0007] In one possible implementation, the first bias line is provided with a first filter stub, which is used to filter out radio frequency signals on the first bias line; the second bias line is provided with a second filter stub, which is used to filter out radio frequency signals on the second bias line.

[0008] In one possible implementation, the metasurface array structure further includes a plurality of third connection holes that penetrate at least the second dielectric layer and connect the second metal layer and the phase-shifting network layer. One end of the second DC blocking capacitor not connected to the first branch line structure is connected to the second metal layer through at least one of the third connection holes. One end of the first electronically controlled element not connected to the first branch line structure is connected to the second metal layer through at least one of the third connection holes. One end of the fourth DC blocking capacitor not connected to the second branch line structure is connected to the second metal layer through at least one of the third connection holes. One end of the second electronically controlled element not connected to the second branch line structure is connected to the second metal layer through at least one of the third connection holes.

[0009] In one possible implementation, the metasurface array structure further includes a voltage adjustment device connected to a plurality of first bias lines and a plurality of second bias lines, the voltage adjustment device being used to adjust the voltage applied to each of the first bias lines and the second bias lines respectively to adjust the reflection phase of each of the array elements.

[0010] In one possible implementation, the array unit further includes a guide plate located on one side of the reflective patch, the orthographic projection of the guide plate on the first dielectric layer at least partially overlapping the orthographic projection of the reflective patch on the first dielectric layer; In the direction away from the reflective patch, the distance between the guide plate and the reflective patch ranges from 0.03λ to 0.08λ, where λ represents the shortest operating wavelength.

[0011] In one possible implementation, the array unit includes a plurality of guide sheets arranged in a direction away from the reflective patch; the orthographic projections of the plurality of guide sheets arranged in a direction away from the reflective patch on the first dielectric layer at least partially overlap.

[0012] In one possible implementation, the metasurface array structure further includes a connection component and mounting holes penetrating the first metal layer, the first dielectric layer, the second metal layer, the second dielectric layer, and the phase-shifting network layer; The guide plate and the reflective patch are fixedly connected by a connecting assembly passing through the mounting hole.

[0013] In one possible implementation, the reflective patch includes a first region, a first protrusion extending along a first direction, and a second protrusion extending along a second direction, wherein the first protrusion and the second protrusion are respectively connected to the first region; the first direction is perpendicular to the second direction; The orthographic projection of the first connecting hole on the reflective patch is located inside the second protrusion, and the orthographic projection of the first connecting hole on the reflective patch is located on the side of the second protrusion away from the first region. The orthographic projection of the second connecting hole on the reflective patch is located inside the first protrusion, and the orthographic projection of the second connecting hole on the reflective patch is located on the side of the first protrusion away from the first region.

[0014] In one possible implementation, the size of the periodic arrangement of the array cells is calculated in the following way:

[0015] Where L represents the size of the array unit, λ represents the shortest operating wavelength, and θ represents the scanning angle of the array unit.

[0016] Based on any of the above aspects, the metasurface array structure provided in this application embodiment, by setting the first phase-shifting network structure and the second phase-shifting network structure on the side of the second dielectric layer away from the first metal layer, and realizing the electrical connection between the first phase-shifting network structure and the second phase-shifting network structure and the reflective patch through the first connection hole and the second connection hole respectively, can not only achieve large-range, high-precision phase modulation and realize independent dual-polarization control, but also effectively reduce the size of the array unit and improve the scanning capability of the array unit. At the same time, it can also avoid the interference of the first phase-shifting network structure and the second phase-shifting network structure to the reflective patch. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is one of the structural schematic diagrams of the metasurface array structure provided in this embodiment; Figure 2 This is the second schematic diagram of the metasurface array structure provided in this embodiment; Figure 3 This is the third schematic diagram of the metasurface array structure provided in this embodiment; Figure 4 This is the fourth schematic diagram of the metasurface array structure provided in this embodiment; Figure 5 This is the fifth schematic diagram of the metasurface array structure provided in this embodiment; Figure 6 This is the sixth schematic diagram of the metasurface array structure provided in this embodiment; Figure 7 This is the seventh schematic diagram of the metasurface array structure provided in this embodiment; Figure 8 This is a schematic diagram illustrating the effect of the capacitance change of the first electrically tunable element on the reflection amplitude of the metasurface array structure in this embodiment. Figure 9 This is a schematic diagram illustrating the effect of capacitance change of the first electrically tunable element on the reflection phase of the metasurface array structure in this embodiment; Figure 10 This is a schematic diagram illustrating the effect of the capacitance change of the second electrically tunable element on the reflection amplitude of the metasurface array structure in this embodiment; Figure 11 This is a schematic diagram illustrating the effect of capacitance change of the second electrically tunable element provided in this embodiment on the reflection phase of the metasurface array structure.

[0019] Icons: 100 - First metal layer; 110 - Reflective patch; 111 - First region; 112 - First protrusion; 113 - Second protrusion; 101 - Array unit; 200 - First dielectric layer; 300 - Second metal layer; 400 - Second dielectric layer; 500 - Phase-shifting network layer; 510 - First phase-shifting network structure; 511 - First bias line; 512 - First phase-shifting structure; 513 - First DC blocking capacitor; 514 - Second DC blocking capacitor; 515 - First electronically tunable element; 516-First branch line structure; 517-First filter stub; 520-Second phase-shifting network structure; 521-Second bias line; 522-Second phase-shifting structure; 523-Third DC blocking capacitor; 524-Fourth DC blocking capacitor; 525-Second electronically controlled element; 526-Second branch line structure; 527-Second filter stub; 600-Connecting assembly; 610-First connecting hole; 620-Second connecting hole; 630-Third connecting hole; 640-Mounting hole; 700-Directional piece. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0024] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0025] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0026] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0027] The inventors discovered that, currently, to achieve large-scale, high-precision phase modulation of metasurface array structures, a phase-shifting network structure is typically combined with the array elements, and the phase-shifting network structure and the reflective patches in the array elements are placed on the same layer. However, this leads to an increase in the size of the array elements, thereby reducing the scanning capability of the metasurface array structure. Furthermore, the phase-shifting network structure can interfere with the array elements, affecting the accuracy of phase modulation.

[0028] This embodiment provides a solution to the above problems. The specific implementation of this application will be described in detail below with reference to the accompanying drawings.

[0029] Please refer to Figure 1 , Figure 1 Example: A schematic diagram of the metasurface array structure provided in this embodiment. The metasurface array structure may include a first metal layer 100, a first dielectric layer 200, a second metal layer 300, a second dielectric layer 400, and a phase-shifting network layer 500, which are stacked sequentially from top to bottom.

[0030] Please refer to Figure 2 The first metal layer 100 may include a plurality of array units 101 arranged in an array along a first direction D1 and a second direction D2. Each array unit 101 may include a reflective patch 110, with the first direction perpendicular to the second direction. Each array unit 101 is provided with a reflective patch 110.

[0031] In some examples, the metasurface array structure can be composed of 49 array units 101 arranged in a rectangular grid array of 7×7, and the spacing between the array units 101 can be 68×68mm. The operating frequency band of the metasurface array structure in different polarization directions can be 1.71~2.17GHz, with a relative bandwidth of 23.7%.

[0032] Please refer to this again. Figure 1 The first dielectric layer 200 can be located on one side of the first metal layer 100, the second metal layer 300 can be located on the side of the first dielectric layer 200 away from the first metal layer 100, the second dielectric layer 400 can be located on the side of the second metal layer 300 away from the first dielectric layer 200, and the phase-shifting network layer 500 can be located on the side of the second dielectric layer 400 away from the second metal layer 300. The second metal layer 300 is a ground layer.

[0033] In some examples, the materials of the first dielectric layer 200 and the second dielectric layer 400 can be determined according to the operating frequency band of the metasurface array structure. For example, when the operating frequency band of the metasurface array structure is the millimeter-wave band, the materials of the first dielectric layer 200 and the second dielectric layer 400 can be ceramic. When the operating frequency band of the metasurface array structure is the infrared band, the materials of the first dielectric layer 200 and the second dielectric layer 400 can be one or more of quartz and high-resistivity silicon. When the operating frequency band of the metasurface array structure is the ultraviolet band, the materials of the first dielectric layer 200 and the second dielectric layer 400 can be one or more of fused silica and titanium dioxide. The materials of the first dielectric layer 200 and the second dielectric layer 400 can be the same or different, and can be determined according to actual needs, without limitation here.

[0034] Please refer to Figure 3 The phase-shifting network layer 500 may include a plurality of first phase-shifting network structures 510 and a plurality of second phase-shifting network structures 520 arranged along the second direction. The first phase-shifting network structures 510 and 520 are arranged adjacent to each other in the first direction; that is, in the first direction, a first phase-shifting network structure 510 may be located between two adjacent second phase-shifting networks, and a second phase-shifting network structure 520 may be located between two adjacent first phase-shifting networks. The first phase-shifting network structures 510 and 520 are electrically connected to the reflective patch 110 through first connecting holes 610 and second connecting holes 620, respectively. The first connecting holes 610 and second connecting holes 620 at least penetrate the first dielectric layer 200, the second metal layer 300, and the second dielectric layer 400.

[0035] In this embodiment, each reflective patch 110 can be electrically connected to a first phase-shifting network structure 510 and a second phase-shifting network structure 520 simultaneously. The number of first phase-shifting network structures 510 and second phase-shifting network structures 520 is the same, which is equal to the number of reflective patches 110. Specifically, a reflective patch 110 can be electrically connected to a first phase-shifting network structure 510 through a first connection hole 610 that penetrates at least through the first dielectric layer 200, the second metal layer 300, and the second dielectric layer 400, and can be electrically connected to a second phase-shifting network structure 520 through a second connection hole 620 that penetrates at least through the first dielectric layer 200, the second metal layer 300, and the second dielectric layer 400. The number of first connection holes 610 can be equal to the number of first phase-shifting network structures 510, and the number of second connection holes 620 can be equal to the number of second phase-shifting network structures 520.

[0036] Specifically, when the polarization direction of the incident electromagnetic wave is the first direction (i.e., the horizontal direction), the reflective patch 110 can transmit the electromagnetic wave signal to the second phase-shifting network structure 520 through the first connection hole 610. After the second phase-shifting network structure 520 adjusts the phase of the signal, the adjusted signal is fed back to the reflective patch 110 through the first connection hole 610, thereby realizing independent phase control of the incident electromagnetic wave in the first polarization direction. When the polarization direction of the incident electromagnetic wave is the second direction (i.e., the vertical direction), the reflective patch 110 transmits the signal to the first phase-shifting network structure 510 through the second connection hole 620. After the first phase-shifting network structure 510 adjusts the phase of the signal, the adjusted signal is fed back to the reflective patch 110 through the second connection hole 620, thereby realizing independent phase control of the incident electromagnetic wave in the second polarization direction.

[0037] In some examples, the first connection hole 610 and the second connection hole 620 can penetrate the phase-shifting network layer 500, the second dielectric layer 400, the second metal layer 300, the first dielectric layer 200, and the first metal layer 100. The first connection hole 610 and the second connection hole 620 can be metallized through holes, that is, conductive metal material is deposited on the inner wall of the through hole to achieve electrical conduction and ensure a stable electrical connection between the reflective patch 110 and the phase-shifting network layer 500. The material of the first connection hole 610 and the second connection hole 620 can be one or more of copper, gold, and silver.

[0038] Based on the above design, in the metasurface array structure provided in this embodiment, by setting the first phase-shifting network structure 510 and the second phase-shifting network structure 520 on the side of the second dielectric layer 400 away from the first metal layer 100, and by realizing the electrical connection between the first phase-shifting network structure 510 and the second phase-shifting network structure 520 and the reflective patch 110 through the first connection hole 610 and the second connection hole 620 respectively, it can not only realize wide-range, high-precision phase modulation (bandwidth and linear modulation in a wide frequency band) and realize independent dual-polarization control, but also effectively reduce the size of the array unit 101 and improve the scanning capability of the array unit 101. At the same time, it can also avoid the interference of the first phase-shifting network structure 510 and the second phase-shifting network structure 520 to the reflective patch 110.

[0039] In one possible implementation, please refer to Figure 4 The first phase-shifting network structure 510 can be used to control incident electromagnetic waves with a polarization direction of the second direction. The first phase-shifting network structure 510 may include a first bias line 511 extending along the second direction and a first phase-shifting structure 512 connected to the first bias line 511. The first phase-shifting structure 512 may include a first DC blocking capacitor 513, a second DC blocking capacitor 514, a first electronically tunable element 515, and a first branch line structure 516. One end of the first DC blocking capacitor 513 is connected to the first branch line structure 516, and the other end of the first DC blocking capacitor 513 is connected to the reflective patch 110 through a first connection hole 610. One end of the second DC blocking capacitor 514 is connected to the first branch line structure 516, and the other end of the second DC blocking capacitor 514 is connected to the second metal layer 300. One end of the first electronically tunable element 515 is connected to the first branch line structure 516, and the other end of the first electronically tunable element 515 is connected to the second metal layer 300.

[0040] In this embodiment, the first phase-shifting structure 512 may include a first DC blocking capacitor 513, a second DC blocking capacitor 514, four first electrical control elements 515, and a first branch line structure 516. The first DC blocking capacitor 513 and the second DC blocking capacitor 514 can be used to isolate DC current signals, and the first electrical control elements 515 can be used to change the phase state of the first phase-shifting structure 512. In some examples, the first electrical control elements 515 can be varactor diodes or PIN diodes. The first branch line structure 516 can be rectangular in shape. The first phase shifting structure 512 can also include a first connection terminal, a second connection terminal, a third connection terminal, and a fourth connection terminal located at the four right angles of the rectangle. One end of the first DC blocking capacitor 513 is connected to the first connection terminal, and the other end of the first DC blocking capacitor 513 is connected to the reflective patch 110 through the first connection hole 610. One end of the second DC blocking capacitor 514 is connected to the second connection terminal, and the other end of the second DC blocking capacitor 514 is connected to the second metal layer 300. Two first electrical control elements 515 are respectively connected to the third connection terminal, and two other first electrical control elements 515 are respectively connected to the fourth connection terminal. The other ends of the four first electrical control elements 515 that are not connected to the third or fourth connection terminal are all connected to the second metal layer 300. The first bias line 511 may include a first portion extending along a second direction, a second portion extending along a second direction, and a third portion connecting the first portion and the second portion. The third portion extends along the first direction. The first portion of the first bias line 511 may be perpendicularly connected to the first phase-shifting structure 512. The second portion of the first bias line 511 may extend to the edge region of the metasurface array structure for connection with a voltage adjustment device.

[0041] Please refer to this again. Figure 4 The second phase-shifting network structure 520 can be used to control incident electromagnetic waves with a polarization direction of the first direction. The second phase-shifting network structure 520 may include a second bias line 521 extending along the second direction and a second phase-shifting structure 522 connected to the second bias line 521. The second phase-shifting structure 522 may include a third DC blocking capacitor 523, a fourth DC blocking capacitor 524, a second electronically tunable element 525, and a second branch line structure 526. One end of the third DC blocking capacitor 523 is connected to the second branch line structure 526, and the other end of the third DC blocking capacitor 523 is connected to the reflective patch 110 through the second connection hole 620. One end of the fourth DC blocking capacitor 524 is connected to the second branch line structure 526, and the other end of the fourth DC blocking capacitor 524 is connected to the second metal layer 300. One end of the second electronically tunable element 525 is connected to the second branch line structure 526, and the other end of the second electronically tunable element 525 is connected to the second metal layer 300.

[0042] In this embodiment, the second phase-shifting structure 522 may include a third DC blocking capacitor 523, a fourth DC blocking capacitor 524, four second electrical control elements 525, and a second branch line structure 526. The third DC blocking capacitor 523 and the fourth DC blocking capacitor 524 can be used to isolate DC current signals, and the second electrical control elements 525 can be used to change the phase state of the second phase-shifting structure 522. In some examples, the second electrical control element 525 can be a varactor diode or a PIN diode. The second branch line structure 526 can be rectangular in shape. The second phase shifting structure 522 can also include a fifth connection terminal, a sixth connection terminal, a seventh connection terminal, and an eighth connection terminal located at the four right angles of the rectangle. One end of the third DC blocking capacitor 523 is connected to the fifth connection terminal, and the other end of the third DC blocking capacitor 523 is connected to the reflective patch 110 through the second connection hole 620. One end of the fourth DC blocking capacitor 524 is connected to the sixth connection terminal, and the other end of the fourth DC blocking capacitor 524 is connected to the second metal layer 300. Two second electrical control elements 525 are respectively connected to the seventh connection terminal, and two other second electrical control elements 525 are respectively connected to the eighth connection terminal. The other ends of the four second electrical control elements 525 that are not connected to the seventh or eighth connection terminal are all connected to the second metal layer 300. The second bias line 521 may include a fourth portion extending along the second direction, a fifth portion extending along the second direction, and a sixth portion connecting the fourth and fifth portions. The sixth portion extends along the first direction. The fourth portion of the second bias line 521 may be perpendicularly connected to the second phase-shifting structure 522. The fifth portion of the second bias line 521 may extend to the edge region of the metasurface array structure for connection with a voltage adjustment device.

[0043] In some examples, when the first power-adjusting element 515 and the second power-adjusting element 525 are varactor diodes, the capacitance variation range of the first power-adjusting element 515 and the second power-adjusting element 525 can be 0.04~0.2pF, and the corresponding applied voltage range can be 0~20V.

[0044] In one possible implementation, please refer again. Figure 4 The first bias line 511 is provided with a first filter stub 517, which can be used to filter out radio frequency signals on the first bias line 511. The second bias line 521 is provided with a second filter stub 527, which can be used to filter out radio frequency signals on the second bias line 521.

[0045] In some examples, the first filter stub 517 and the second filter stub 527 are both fan-shaped structures. The first filter stub 517 can be located at the connection position of the first part and the third part of the first bias line 511, and the second filter stub 527 can be located at the connection position of the fourth part and the sixth part of the second bias line 521.

[0046] In one possible implementation, please refer again. Figure 4 The metasurface array structure may further include at least a plurality of third connection holes 630 that penetrate the second dielectric layer 400 and connect the second metal layer 300 and the phase-shifting network layer 500. The end of the second DC blocking capacitor 514 that is not connected to the first branch line structure 516 can be connected to the second metal layer 300 through at least one third connection hole 630. The end of the first electronically controlled element 515 that is not connected to the first branch line structure 516 can be connected to the second metal layer 300 through at least one third connection hole 630. The end of the fourth DC blocking capacitor 524 that is not connected to the second branch line structure 526 can be connected to the second metal layer 300 through at least one third connection hole 630. The end of the second electronically controlled element 525 that is not connected to the second branch line structure 526 can be connected to the second metal layer 300 through at least one third connection hole 630.

[0047] In this embodiment, a second DC blocking capacitor 514 of the first phase-shifting structure 512 can be electrically connected to the second metal layer 300 through a third connection hole 630. The four first electronically adjustable elements 515 of the first phase-shifting structure 512 can be electrically connected to the second metal layer 300 through the four third connection holes 630 respectively. A fourth DC blocking capacitor 524 of the second phase-shifting structure 522 can be electrically connected to the second metal layer 300 through a third connection hole 630. The four second electronically adjustable elements 525 of the second phase-shifting structure 522 can be electrically connected to the second metal layer 300 through the four third connection holes 630 respectively.

[0048] In some examples, the orthographic projection of a portion of the third connection hole 630 on the first metal layer 100 may lie within the reflective patch 110. When the orthographic projection of the third connection hole 630 on the first metal layer 100 lies within the reflective patch 110, the third connection hole 630 may penetrate the phase-shifting network layer 500, the second dielectric layer 400, the second metal layer 300, the first dielectric layer 200, and the first metal layer 100. Alternatively, the orthographic projection of a portion of the third connection hole 630 on the first metal layer 100 may not lie within the reflective patch 110. When the orthographic projection of the third connection hole 630 on the first metal layer 100 does not lie within the reflective patch 110, the third connection hole 630 may penetrate the phase-shifting network layer 500, the second dielectric layer 400, the second metal layer 300, and the first dielectric layer 200.

[0049] In one possible implementation, the metasurface array structure may further include a voltage adjustment device connected to a plurality of first bias lines 511 and a plurality of second bias lines 521. The voltage adjustment device may be used to adjust the voltage applied to each first bias line 511 and the second bias line 521 respectively to adjust the reflection phase of each array unit 101.

[0050] In this embodiment, please refer again. Figure 3 In the metasurface array structure, the first bias line 511 and the second bias line 521 can form multiple hubs at both ends of the phase-shifting network layer 500, respectively. For example, multiple first bias lines 511 and multiple second bias lines 521 can be connected to n hubs, where n is an integer and n≥1.

[0051] Specifically, in the second direction, the multiple first phase-shifting network structures 510 and the multiple second phase-shifting network structures 520 in the same column can be divided into a first group and a second group arranged along the second direction. The first bias line 511 of each first phase-shifting network structure 510 and the second bias line 521 of each second phase-shifting network structure 520 in the first group can extend to one end of the phase-shifting network layer 500 to form at least one hub end. The first bias line 511 of each first phase-shifting network structure 510 and the second bias line 521 of each second phase-shifting network structure 520 in the second group can extend to the other end of the phase-shifting network layer 500 to form at least one hub end. Therefore, the voltage adjustment device can be connected to multiple hubs formed by the first bias line 511 and the second bias line 521. Each hub is provided with multiple pins, which are respectively connected to the first bias line 511 and the second bias line 521. By applying different DC voltages to each pin on the hub, the voltage adjustment device can adjust the working state of the first electrical control element 515 in each first phase-shifting network structure 510 and the second electrical control element 525 in each second phase-shifting network structure 520, thereby realizing independent control of the metasurface array structure in different polarization directions and different frequency bands.

[0052] In one possible implementation, please refer to Figure 5 The array unit 101 may further include a director 700 located on one side of the reflective patch 110, the orthographic projection of the director 700 on the first dielectric layer 200 at least partially overlapping the orthographic projection of the reflective patch 110 on the first dielectric layer 200; in the direction away from the reflective patch 110, the distance between the director 700 and the reflective patch 110 ranges from 0.03λ to 0.08λ, where λ may represent the shortest operating wavelength. In some examples, the distance between the director 700 and the reflective patch 110 may be 7 mm.

[0053] In this embodiment, the guide piece 700 can be located directly above the reflective patch 110, and the geometric center of the orthographic projection of the guide piece 700 on the first dielectric layer 200 can coincide with the geometric center of the orthographic projection of the reflective patch 110 on the first dielectric layer 200. The orthographic projection of the guide piece 700 on the first dielectric layer 200 can be rectangular, and the material of the guide piece 700 can be a metal material.

[0054] Specifically, when the polarization direction of the incident electromagnetic wave is the first direction (i.e., the horizontal direction), the incident electromagnetic wave can be transmitted to the reflective patch 110 via the director 700, and then transmitted to the second phase-shifting network structure 520 via the first connection hole 610. After the signal is phase-adjusted by the second electronically tunable element 525 of the second phase-shifting network structure 520, different reflection phases are obtained. The adjusted signal is then fed back to the reflective patch 110 via the first connection hole 610, thereby realizing independent phase control of the incident electromagnetic wave in the first polarization direction. When the polarization direction of the incident electromagnetic wave is the second direction (i.e., the vertical direction), the incident electromagnetic wave can be transmitted to the reflective patch 110 via the director 700, and then the signal is transmitted to the first phase-shifting network structure 510 through the second connection hole 620. After the first phase-shifting network structure 510's first electronically tunable element 515 adjusts the phase of the signal, different reflection phases are obtained. The adjusted signal is then fed back to the reflective patch 110 through the second connection hole 620, thereby realizing independent phase control of the incident electromagnetic wave in the second polarization direction.

[0055] In the above design, by setting a guide plate 700 above the reflective patch 110, it is possible to ensure that the metasurface array structure operates in the same voltage state over a wide bandwidth, and also to increase the resonant frequency point in the operating frequency band, realize linear and large-range change of the reflection phase in a wide bandwidth, and reduce the phase modulation loss in the operating frequency band.

[0056] In one possible implementation, please refer to Figure 6 The array unit 101 may include a plurality of guide pieces 700 arranged in a direction away from the reflective patch 110, and the orthographic projections of the plurality of guide pieces 700 arranged in a direction away from the reflective patch 110 on the first dielectric layer 200 overlap.

[0057] In this embodiment, when there are multiple director pieces 700, the multiple director pieces 700 are arranged sequentially in the direction away from the reflective patch 110, and the orthographic projections of the multiple director pieces 700 arranged in the direction away from the reflective patch 110 on the first dielectric layer 200 can completely overlap. The number of director pieces 700 provided in each array unit 101 can be equal, and the spacing between the multiple director pieces 700 can be equal or unequal. Specifically, it can be optimized according to the operating frequency band and phase control requirements.

[0058] It should be noted that the number of guide plates 700 is not limited to... Figure 6 The two in the word can also be three, four, etc., without being specifically limited here.

[0059] In the above design, by setting multiple guide plates 700 above the reflective patch 110, the operating frequency band can be further widened, and the flexibility and accuracy of phase control can be enhanced.

[0060] In one possible implementation, please refer again. Figure 5 and Figure 6 The metasurface array structure may also include a connecting component 600 and a mounting hole 640 penetrating the first metal layer 100, the first dielectric layer 200, the second metal layer 300, the second dielectric layer 400 and the phase-shifting network layer 500; the guide plate 700 and the reflective patch 110 can be fixedly connected by the connecting component 600 passing through the mounting hole 640.

[0061] In this embodiment, the mounting hole 640 can pass through the director piece 700, the reflective patch 110, the first dielectric layer 200, the second metal layer 300, the second dielectric layer 400, and the phase-shifting network layer 500. The connecting component 600 can be a connecting post with threads at both ends. By passing the connecting post through the mounting hole 640 and fixing the two ends of the connecting post with nuts corresponding to the threads of the connecting post, the director piece 700 is fixed above the reflective patch 110.

[0062] In some examples, the guide plate 700 and the reflective patch 110 can be fixedly connected by two connecting components 600 passing through two mounting holes 640 respectively.

[0063] In one possible implementation, please refer to Figure 7 The reflective patch 110 may include a first region 111, a first protrusion 112 extending along a first direction, and a second protrusion 113 extending along a second direction. The first protrusion 112 and the second protrusion 113 are respectively connected to the first region 111, and the first direction is perpendicular to the second direction. The orthographic projection of the first connecting hole 610 on the reflective patch 110 may be located within the second protrusion 113, and the orthographic projection of the first connecting hole 610 on the reflective patch 110 is located on the side of the second protrusion 113 away from the first region 111. The orthographic projection of the second connecting hole 620 on the reflective patch 110 is located within the first protrusion 112, and the orthographic projection of the second connecting hole 620 on the reflective patch 110 is located on the side of the first protrusion 112 away from the first region 111.

[0064] In this embodiment, the first protrusion 112 can be perpendicularly connected to the first side of the first region 111 extending along the second direction, and the second protrusion 113 can be perpendicularly connected to the second side of the first region 111 extending along the first direction. The geometric center of the first region 111 is located at the intersection of the axis of symmetry of the first protrusion 112 in the first direction and the axis of symmetry of the second protrusion 113 in the second direction. The orthographic projection of the first connecting hole 610 on the reflective patch 110 can be located on the side of the second protrusion 113 away from the first region 111 and on the axis of symmetry of the second protrusion 113 in the second direction. The orthographic projection of the second connecting hole 620 is located on the side of the first protrusion 112 away from the first region 111 and on the axis of symmetry of the first protrusion 112 in the first direction.

[0065] It should be noted that the positions of the first connecting hole 610 and the second connecting hole 620 can be flexibly adjusted according to the layout requirements of the first phase-shifting network structure 510 and the second phase-shifting network structure 520, so as to achieve efficient electrical connection between the phase-shifting network layer 500 and the reflective patch 110. No specific limitation is made here.

[0066] In one possible implementation, the size of the array element 101 is negatively correlated with its scanning capability; that is, the larger the size of the array element 101, the weaker its scanning capability. To ensure the scanning capability of the array element 101 while avoiding grating lobes in the reflected beam, the maximum size of the periodic arrangement of the array elements 101 can be calculated as follows:

[0067] Where L can represent the size of the periodic arrangement of array units 101, λ can represent the shortest operating wavelength, and θ can represent the scanning angle of array units 101.

[0068] Please refer to Figure 8 , Figure 8 Example: A schematic diagram showing the effect of capacitance change of the first electronically controlled element 515 on the reflection amplitude of the metasurface array structure. When the first electronically controlled element 515 is a varactor diode and the operating frequency band of the metasurface array structure is 1.71~2.17GHz, the electromagnetic wave reflection amplitude of the unit can be within -6dB.

[0069] Please refer to Figure 9 , Figure 9 Example: A schematic diagram of the change in the capacitance of the first electronically adjustable element 515 provided in this application on the change in the reflection phase of the metasurface array structure. When the first electronically adjustable element 515 is a varactor diode and the capacitance of the first electronically adjustable element 515 gradually changes from 0.04pF to 0.2pF, the adjustable range of the reflection phase of the incident electromagnetic wave in the 1.71~2.17GHz frequency band exceeds 320°.

[0070] Please refer to Figure 10 , Figure 10 Example: A schematic diagram showing the effect of capacitance change of the second electronically controlled element 525 on the reflection amplitude of the metasurface array structure. When the second electronically controlled element 525 is a varactor diode and the operating frequency band of the metasurface array structure is 1.71~2.17GHz, the electromagnetic wave reflection amplitude of the unit can be within -6dB.

[0071] Please refer to Figure 11 , Figure 11 Example: A schematic diagram of the change in the capacitance of the second electronically adjustable element 525 provided in this application on the change in the reflection phase of the metasurface array structure. When the second electronically adjustable element 525 is a varactor diode and the capacitance of the second electronically adjustable element 525 gradually changes from 0.04pF to 0.2pF, the adjustable range of the reflection phase of the incident electromagnetic wave in the 1.71~2.17GHz frequency band exceeds 320°.

[0072] In summary, this embodiment provides a metasurface array structure. By setting the first phase-shifting network structure and the second phase-shifting network structure on the side of the second dielectric layer away from the first metal layer, and electrically connecting the first phase-shifting network structure and the reflective patch through the first connection hole and the second connection hole respectively, it can not only achieve wide-range, high-precision phase modulation and dual-polarization independent control, but also effectively reduce the size of the array unit and improve the scanning capability of the array unit. At the same time, it can also avoid interference from the first phase-shifting network structure and the second phase-shifting network structure to the reflective patch.

[0073] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0074] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A metasurface array structure, characterized in that, include: A first metal layer, comprising a plurality of array units arranged in an array, wherein each array unit includes a reflective patch; A first dielectric layer located on one side of the first metal layer; A second metal layer located on the side of the first dielectric layer away from the first metal layer; The second dielectric layer is located on the side of the second metal layer away from the first dielectric layer; A phase-shifting network layer is located on the side of the second dielectric layer away from the second metal layer. The phase-shifting network layer includes a plurality of first phase-shifting network structures and a plurality of second phase-shifting network structures. The first phase-shifting network structures and the second phase-shifting network structures are electrically connected to the reflective patch through a first connection hole and a second connection hole, respectively. The first connection hole and the second connection hole at least penetrate the first dielectric layer, the second metal layer and the second dielectric layer.

2. The metasurface array structure according to claim 1, characterized in that, The first phase-shifting network structure includes a first bias line extending along a second direction and a first phase-shifting structure connected to the first bias line. The first phase-shifting structure includes a first DC blocking capacitor, a second DC blocking capacitor, a first electronically tunable element, and a first branch line structure. One end of the first DC blocking capacitor is connected to the first branch line structure, and the other end of the first DC blocking capacitor is connected to the reflective patch through the first connection hole. One end of the second DC blocking capacitor is connected to the first branch line structure, and the other end of the second DC blocking capacitor is connected to the second metal layer. One end of the first electronically tunable element is connected to the first branch line structure, and the other end of the first electronically tunable element is connected to the second metal layer. The second phase-shifting network structure includes a second bias line extending along the second direction and a second phase-shifting structure connected to the second bias line. The second phase-shifting structure includes a third DC blocking capacitor, a fourth DC blocking capacitor, a second electronically tunable element, and a second branch line structure. One end of the third DC blocking capacitor is connected to the second branch line structure, and the other end of the third DC blocking capacitor is connected to the reflective patch through the second connection hole. One end of the fourth DC blocking capacitor is connected to the second branch line structure, and the other end of the fourth DC blocking capacitor is connected to the second metal layer. One end of the second electronically tunable element is connected to the second branch line structure, and the other end of the second electronically tunable element is connected to the second metal layer.

3. The metasurface array structure according to claim 2, characterized in that, The first bias line is provided with a first filter stub, which is used to filter out the radio frequency signal on the first bias line; the second bias line is provided with a second filter stub, which is used to filter out the radio frequency signal on the second bias line.

4. The metasurface array structure according to claim 2, characterized in that, The metasurface array structure further includes at least a plurality of third connection holes that penetrate the second dielectric layer and connect the second metal layer and the phase-shifting network layer. The end of the second DC blocking capacitor that is not connected to the first branch line structure is connected to the second metal layer through at least one of the third connection holes. The end of the first electronically controlled element that is not connected to the first branch line structure is connected to the second metal layer through at least one of the third connection holes. The end of the fourth DC blocking capacitor that is not connected to the second branch line structure is connected to the second metal layer through at least one of the third connection holes. The end of the second electronically controlled element that is not connected to the second branch line structure is connected to the second metal layer through at least one of the third connection holes.

5. The metasurface array structure according to claim 2, characterized in that, The metasurface array structure further includes a voltage adjustment device connected to a plurality of first bias lines and a plurality of second bias lines. The voltage adjustment device is used to adjust the voltage applied to each of the first bias lines and the second bias lines respectively to adjust the reflection phase of each array unit.

6. The metasurface array structure according to claim 1, characterized in that, The array unit further includes a guide plate located on one side of the reflective patch, wherein the orthographic projection of the guide plate on the first dielectric layer at least partially overlaps with the orthographic projection of the reflective patch on the first dielectric layer; In the direction away from the reflective patch, the distance between the guide plate and the reflective patch ranges from 0.03λ to 0.08λ, where λ represents the shortest operating wavelength.

7. The metasurface array structure according to claim 6, characterized in that, The array unit includes a plurality of guide sheets arranged in a direction away from the reflective patch; the orthographic projections of the plurality of guide sheets arranged in a direction away from the reflective patch on the first dielectric layer at least partially overlap.

8. The metasurface array structure according to claim 6, characterized in that, The metasurface array structure further includes connection components and mounting holes penetrating the first metal layer, the first dielectric layer, the second metal layer, the second dielectric layer, and the phase-shifting network layer; The guide plate and the reflective patch are fixedly connected by a connecting assembly passing through the mounting hole.

9. The metasurface array structure according to claim 1, characterized in that, The reflective patch includes a first region, a first protrusion extending along a first direction, and a second protrusion extending along a second direction, wherein the first protrusion and the second protrusion are respectively connected to the first region; The first direction is perpendicular to the second direction; The orthographic projection of the first connecting hole on the reflective patch is located inside the second protrusion, and the orthographic projection of the first connecting hole on the reflective patch is located on the side of the second protrusion away from the first region. The orthographic projection of the second connecting hole on the reflective patch is located inside the first protrusion, and the orthographic projection of the second connecting hole on the reflective patch is located on the side of the first protrusion away from the first region.

10. The metasurface array structure according to claim 1, characterized in that, The dimensions of the periodic arrangement of the array elements are calculated in the following way: ； Where L represents the size of the array unit, λ represents the shortest operating wavelength, and θ represents the scanning angle of the array unit.

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