Anti-vibration enhancement structure of DDR module connector and preparation method thereof

Abstract

The application relates to the field of electronic component connectors and discloses a vibration-resistant enhanced structure of a DDR module connector and a preparation method, which comprises an insulating body, a negative Poisson's ratio microskeleton array, a piezoelectric doped shear thickening gel, an asymmetric dielectric guide rail and a microfluid pressure relief flow channel, a slot for accommodating a DDR module is arranged in the insulating body, and a metal terminal array is embedded in the two side walls of the slot in the longitudinal direction. In the application, the self-adaptive mechanical locking mechanism is constructed by the negative Poisson's ratio microskeleton array and the piezoelectric doped shear thickening gel, under the vibration working condition, the longitudinal micro-displacement makes the cells be stretched to produce transverse expansion deformation, lateral pressure is applied to the DDR module, the local shear rate is increased to promote the agglomeration of nanoparticles in the gel, and the nanoparticles are changed from a liquid phase into a solid phase. The structure dissipates kinetic energy by internal friction, effectively limits the relative sliding of the DDR module and avoids fretting wear of the golden fingers.

Description

Technical Field

[0001] This invention relates to the field of electronic component connectors, and more particularly to a vibration-resistant reinforced structure and manufacturing method for a DDR module connector. Background Technology

[0002] DDR memory modules are widely used in various computing and control devices. They are usually installed and fixed on the system motherboard through the slot of the DDR module connector. As the application scenarios of electronic devices continue to expand, such as in industrial automation, automotive electronics and edge computing, the devices often face complex external mechanical vibration and physical impact conditions in the actual operating environment.

[0003] Traditional DDR module connectors primarily rely on mechanical latches on both sides and the static elasticity of the metal terminals to hold the DDR module. When subjected to external periodic mechanical vibrations, the existing static assembly structure lacks dynamic response capability. Under vibration excitation, the DDR module is prone to longitudinal micro-displacement away from the bottom of the slot, causing repeated relative slippage between the internal metal terminal array of the connector and the gold fingers of the DDR module. This continuous relative slippage induces fretting wear, damages the contact interface, and consequently reduces the long-term reliability of physical contact and electrical connection.

[0004] Meanwhile, affected by external mechanical vibration, the microscopic contact state between the metal terminal array and the gold fingers changes, inevitably causing high-frequency transient fluctuations in the contact resistance. These fluctuations can generate transient high-frequency noise signals in the high-speed transmission link of digital signals. The existing connector structure only serves as a basic electrical conduction carrier and lacks a dynamic signal decoupling mechanism associated with mechanical vibration. It cannot absorb and bypass such high-frequency stray electromagnetic signals, thus affecting the integrity of high-frequency signals in a vibration environment.

[0005] Furthermore, during operation, the equipment may encounter non-periodic extreme mechanical shocks. Traditional connector insulation bodies are mostly made of rigid resin material through solid injection molding, lacking internal physical volume buffer space for stress unloading. When transient overload impact stress acts directly on the insulation body, the mechanical impact energy cannot be effectively converted and released, easily leading to brittle fracture at the weakest point of the insulation body. Moreover, the internal frictional heat generated by mechanical friction and structural deformation tends to remain inside the slot, and existing connectors do not provide cross-domain dissipation channels for mechanical stress unloading and internal heat dissipation. Summary of the Invention

[0006] To overcome the above deficiencies, this invention provides a vibration-resistant enhancement structure and manufacturing method for a DDR module connector. It aims to improve the technical defects of existing DDR module connectors when facing complex vibration and impact conditions, such as fretting wear due to lack of dynamic clamping, high-frequency noise interference due to lack of dynamic signal decoupling mechanism, and easy breakage of the insulation body due to lack of stress buffer and heat dissipation channel.

[0007] To achieve the above objectives, the present invention employs the following technical solution: including an insulating body, a negative Poisson's ratio microstructure array, a piezoelectric doped shear thickening gel, an asymmetric dielectric rail, and a microfluidic pressure relief channel; The insulating body has a slot for accommodating a DDR module inside. The insulating body has metal terminal arrays embedded longitudinally on both sides of the slot. The bottom edge of the insulating body has a grounding pin. The insulating body has a pre-reserved wiring groove. The pre-reserved wiring groove is filled with a pre-embedded metal wiring. One end of the pre-embedded metal wiring is connected to the grounding pin, and the other end extends to the surface of the slot side wall. The negative Poisson's ratio microstructure array is attached to the two side walls of the slot and is spatially misaligned with the metal terminal array, embedded in the gap area between two adjacent metal terminals in the metal terminal array. The negative Poisson's ratio microstructure array is composed of continuous concave polygonal cells connected together. Cell pores are formed inside the concave polygonal cells. Each cell pore is interconnected to form a three-dimensional pore network. The top layer of concave polygonal cells forms an open end facing the top of the slot. The piezoelectric doped shear thickening gel fills the cell pores. The piezoelectric doped shear thickening gel includes a base liquid and shear thickening nanoparticles and piezoelectric nanoparticles suspended in the base liquid. An elastic sealing film layer is provided at the open end to seal the piezoelectric doped shear thickening gel in the cell pores. The asymmetric dielectric rail is a conductive metal thin film structure, attached to the outer surface of the concave polygon cell, and electrically connected to the grounding pin through the pre-embedded metal trace. The microfluidic pressure relief channel is formed in the bottom space of the insulating body. The microfluidic pressure relief channel has a liquid inlet and a liquid outlet. The liquid outlet is encapsulated with a thermally conductive elastic film. The liquid inlet penetrates the bottom wall of the insulating body and is connected to the cell pores of the concave polygonal cell in the bottom layer.

[0008] As a further description of the above technical solution: The concave polygonal cell adopts a concave hexagonal topological configuration, including two parallel vertical cantilever arms and four inclined sidewalls. The length direction of the two vertical cantilever arms is parallel to the longitudinal depth direction of the slot. The four inclined sidewalls are divided into two groups and are respectively connected between the end connection nodes of the two vertical cantilever arms. The inclined sidewalls are inclined towards the inner geometric center and form a concave angle with the adjacent vertical cantilever arms. Multiple concave polygonal cells are connected in series by sharing the end connection nodes in the longitudinal depth direction and are connected in parallel by sharing the vertical cantilever arms in the transverse direction perpendicular to the longitudinal depth direction to form a two-dimensional mesh structure.

[0009] As a further description of the above technical solution: The asymmetric dielectric rails are laid only on the outer surface facing the metal terminal array. The inner surface of the concave polygonal cell remains insulated to form a spatially asymmetric dielectric layer. The asymmetric dielectric rails extend along the two-dimensional mesh structure to form a continuous conductive network. The bottom of the continuous conductive network is integrally formed with a bottom bus terminal, which physically overlaps with the pre-embedded metal trace.

[0010] As a further description of the above technical solution: The main body of the microfluidic pressure relief channel extends horizontally, and the inner wall of the microfluidic pressure relief channel has a variable cross-sectional shrinkage shape with a cross-sectional area that gradually decreases along the fluid flow direction. The outer surface of the bottom of the insulating body is configured as a thermally conductive interface, and the horizontal cross-section of the liquid outlet is distributed towards the thermally conductive interface. The thermally conductive interface is suitable for contact with an external heat dissipation module.

[0011] As a further description of the above technical solution: The shear-thickening nanoparticles are amorphous silica nanospheres with a silane coupling agent molecular layer grafted on their surface, and the piezoelectric nanoparticles are tetragonal barium titanate nanoparticles with a surfactant molecular layer on their outer surface.

[0012] As a further description of the above technical solution: The average particle size distribution range of the shear-thickening nanoparticles is 100 nm to 500 nm, and the mass fraction in the base liquid is 15% to 35%. The average particle size distribution range of the piezoelectric nanoparticles is 50 nm to 150 nm, and the mass fraction in the total mass of the piezoelectric doped shear-thickening gel is 5% to 15%.

[0013] As a further description of the above technical solution: The negative Poisson's ratio microstructure array exhibits a negative Poisson's ratio effect, resulting in lateral expansion deformation when subjected to longitudinal tensile strain. The shear-thickening nanoparticles possess rheological phase transition properties, causing the shear-thickening nanoparticles inside the piezoelectric-doped shear-thickening gel to mechanically aggregate and form a rigid particle cluster network when subjected to local shear exceeding the critical shear rate threshold, transforming from a liquid phase to a highly rigid solid. The negative Poisson's ratio microstructure array, in conjunction with the solid-state piezoelectric-doped shear-thickening gel, restricts the relative slippage of the DDR module.

[0014] As a further description of the above technical solution: The piezoelectric nanoparticles exhibit a positive piezoelectric effect. They are embedded in the pores formed within the rigid particle cluster network and undergo lattice structure deformation and generate polarized bound charges under the compressive stress of the rigid particle cluster network. These polarized bound charges are used to increase the local equivalent dielectric constant of the piezoelectric doped shear thickening gel, thereby forming a decoupling capacitor with dynamically increasing capacitance between the asymmetric dielectric rails and the metal terminal array.

[0015] As a further description of the above technical solution: The structural yield limit of the piezoelectric-doped shear-thickening gel is configured to be lower than the brittle fracture stress of the insulating body, so that when subjected to extreme mechanical impact and exceeding the structural yield limit, the piezoelectric-doped shear-thickening gel restores macroscopic fluidity and flows under pressure into the microfluidic pressure relief channel through the liquid inlet. The thermally conductive elastic film at the liquid outlet has elastic recovery force, which, together with the local negative pressure brought about by the restoration of the initial configuration of the cell pores, is used to draw the piezoelectric-doped shear-thickening gel back into the cell pores after the mechanical impact is eliminated.

[0016] As a further description of the above technical solution: The preparation method includes the following steps: S1. Import the three-dimensional structural model data characterizing the insulating body, the negative Poisson's ratio micro-skeleton array, the microfluidic pressure relief channel and the reserved wiring trench into the projection micro-stereolithography equipment, and use photosensitive resin solution to perform integrated molding to establish a mechanically rigid base. S2. Perform surface plasma bombardment activation treatment on the insulating body, place a metallization mask and use magnetron sputtering to target and deposit conductive metal target particles, and simultaneously form the asymmetric dielectric rail and the pre-embedded metal trace; after removing the metallization mask, mechanically embed and press the metal terminal array and the grounding pin into the interior of the insulating body, so that the grounding pin and the pre-embedded metal trace form an electrical connection; S3. Immerse the portion containing the concave polygonal cell below the liquid surface of the piezoelectric doped shear thickening gel and place it in a vacuum differential pressure infusion device. After establishing a reference vacuum environment and venting the air, apply a positive infusion pressure to the liquid surface. Under the condition that the local shear rate is controlled to be lower than the critical shear rate threshold, the piezoelectric doped shear thickening gel fills the cell pores and the microfluidic pressure relief channel. S4. Cover the liquid outlet with a thermally conductive elastic film and weld it in place. Inject UV-curable sealing resin around the open end and apply UV light to the point of application to induce an in-situ cross-linking reaction and cure the elastic sealing film layer.

[0017] The present invention has the following beneficial effects: 1. In this invention, an adaptive mechanical locking mechanism is constructed using a negative Poisson's ratio microstructure array and a piezoelectric-doped shear-thickening gel. Under vibration conditions, longitudinal micro-displacement causes the cell units to be stretched, resulting in lateral expansion deformation and applying lateral pressure to the DDR module. Simultaneously, the increased local shear rate promotes the aggregation of nanoparticles within the gel, causing it to change from a liquid phase to a solid phase. This structure utilizes internal friction to dissipate kinetic energy, effectively limiting the relative slippage of the DDR module and preventing fretting wear on the gold fingers.

[0018] 2. In this invention, a signal decoupling compensation mechanism is constructed using the physical properties of piezoelectric nanoparticles. The mechanical stress field generated by mechanical vibration forces the piezoelectric nanoparticles to deform and polarize bound charges. The polarized bound charges increase the local equivalent dielectric constant of the piezoelectric doped shear-thickening gel, causing the asymmetric dielectric rails, ground pins, and pre-embedded metal traces to connect and form a decoupling capacitor network with dynamically increasing capacitance. Based on the spatial capacitive coupling effect, the asymmetric dielectric rails can absorb high-frequency stray electromagnetic signals generated at the metal terminal array and guide these signals to the ground pin via the pre-embedded metal traces for bypass elimination, thereby compensating for the high-frequency signal integrity under mechanical vibration conditions.

[0019] 3. In this invention, the overload fluid unloading mechanism is realized by setting up a microfluidic pressure relief channel and a thermally conductive elastic film. Under non-periodic extreme mechanical impact conditions, the concave polygonal cell undergoes extreme compression deformation, causing the piezoelectric doped shear thickening gel in a high-rigidity solid state to break through the structural yield limit. It flows into the microfluidic pressure relief channel through the liquid inlet opening for buffering, alleviating the transient high pressure inside the insulating body and preventing brittle fracture of the insulating body. At the same time, the piezoelectric doped shear thickening gel carries viscous frictional heat energy to the liquid outlet opening, and the thermally conductive elastic film simultaneously conducts the viscous frictional heat energy to the externally attached heat dissipation module for heat dissipation, realizing the cross-domain dissipation of mechanical energy into thermal energy. Attached Figure Description

[0020] Figure 1This is a diagram illustrating the method for fabricating the vibration-resistant reinforcement structure of the DDR module connector in this invention; Figure 2 This is a structural framework diagram of the vibration-resistant enhancement structure of the DDR module connector in this invention. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Reference Figure 1 - Figure 2 This invention provides a vibration-resistant enhancement structure and preparation method for a DDR module connector. The vibration-resistant enhancement structure is mainly constructed based on piezoelectric doped variable stiffness gel and negative Poisson's ratio microframework. It includes an insulating body, a negative Poisson's ratio microframework array, a piezoelectric doped shear thickening gel, an asymmetric dielectric rail, and a microfluidic pressure relief channel.

[0023] The insulating body has a slot for accommodating a DDR module. Metal terminal arrays are longitudinally embedded on both sides of the slot, so that the metal terminal arrays can make physical contact and electrical connection with the gold fingers of the DDR module in use. A grounding pin is provided on the bottom edge of the insulating body. In addition, a pre-reserved wiring groove is provided inside the insulating body, and a pre-embedded metal wiring is laid in the pre-reserved wiring groove. One end of the pre-embedded metal wiring is connected to the grounding pin, and the other end extends to the side wall surface of the slot.

[0024] The negative Poisson's ratio microstructure array is attached to the two side walls of the slot of the insulating body. To avoid structural interference, the negative Poisson's ratio microstructure array and the metal terminal array are arranged in a staggered spatial position. That is, the negative Poisson's ratio microstructure array is embedded in the gap region between two adjacent metal terminals. The negative Poisson's ratio microstructure array is composed of continuous concave polygonal cells. The walls of the concave polygonal cells define the internal cell pores. The concave polygonal cells have an inner surface facing the inside of the slot and an outer surface facing the two side walls of the slot. In three-dimensional space, the cell pores of each concave polygonal cell are interconnected, forming a three-dimensional pore network that allows fluid to flow up and down. The end of the top concave polygonal cell facing the top of the slot forms an open end.

[0025] The piezoelectric-doped shear-thickening gel fills the pores of the concave polygonal cell. The piezoelectric-doped shear-thickening gel includes a base liquid, in which shear-thickening nanoparticles and piezoelectric nanoparticles are suspended. An elastic sealing film layer is provided at the open end of the concave polygonal cell, which seals the piezoelectric-doped shear-thickening gel inside the cell pores.

[0026] The asymmetric dielectric rail is attached to the outer surface of the concave polygon cell. The asymmetric dielectric rail is a conductive metal thin film structure and is electrically connected to the grounding pin through pre-embedded metal traces.

[0027] The microfluidic pressure relief channel is located in the bottom space of the insulating body. The microfluidic pressure relief channel has an inlet opening and an outlet opening. The inlet opening penetrates the bottom wall of the insulating body and communicates with the cell pores of the concave polygonal cell located in the bottom layer. The outlet opening is located on the outer surface of the bottom of the insulating body. The vibration-resistant enhancement structure of the DDR module connector has a dynamic multi-physics field collaborative working mechanism in the actual operating environment. Under normal assembly conditions, the local shear rate generated by the input external mechanical vibration is lower than the critical shear rate threshold of the piezoelectric doped shear thickening gel, so that the base liquid of the piezoelectric doped shear thickening gel is in a low viscosity state. At this time, the negative Poisson's ratio micro-skeleton array maintains the stress-free initial configuration, and the basic physical contact resistance is maintained between the metal terminal array and the gold fingers of the DDR module.

[0028] When subjected to external periodic mechanical vibration, the DDR module undergoes a longitudinal micro-displacement away from the bottom of the slot. Relying on the surface friction coupling between the outer surface of the concave polygonal cell and the edge of the DDR module, the longitudinal micro-displacement applies longitudinal tensile strain to the negative Poisson's ratio micro-skeleton array. The concave polygonal cell undergoes lateral expansion deformation under stress, thereby applying lateral pressure to the edge surface of the DDR module. At the same time, the increase in local shear rate caused by mechanical vibration causes the shear thickening nanoparticles inside the piezoelectric doped shear thickening gel to undergo mechanical aggregation, causing the piezoelectric doped shear thickening gel to change from a liquid phase to a high-rigidity solid phase. The internal friction dissipates the vibrational kinetic energy to limit the relative slippage of the DDR module.

[0029] The structural compression of the negative Poisson's ratio microstructure array and the phase transition hardening effect of the piezoelectric doped shear-thickening gel create a mechanical stress field within the cell pores. This mechanical stress field forces the piezoelectric nanoparticles to deform and generate polarized bound charges. The polarized bound charges increase the local equivalent dielectric constant of the piezoelectric doped shear-thickening gel, enabling the asymmetric dielectric rails, ground pins, and embedded metal traces to connect and form a decoupling capacitor network with dynamically increasing capacitance. Based on the spatial capacitive coupling effect, the asymmetric dielectric rails absorb the high-frequency stray electromagnetic signals generated at the metal terminal array and guide these signals to the ground pin via the embedded metal traces for bypass elimination.

[0030] Under non-periodic extreme mechanical impact conditions, the insulating body and the negative Poisson's ratio micro-skeleton array are subjected to transient overload impact stress. The concave polygonal cells undergo ultimate compression deformation, causing the piezoelectric doped shear thickening gel in the high-rigidity solid state to break through the structural yield limit and flow into the microfluidic pressure relief channel through the liquid inlet opening. The mechanical energy carried by the transient overload impact stress is converted into the fluid displacement potential energy of the piezoelectric doped shear thickening gel. The piezoelectric doped shear thickening gel is transported along the microfluidic pressure relief channel, and the internal volume of the microfluidic pressure relief channel is used for buffering to alleviate the transient high pressure inside the insulating body.

[0031] After the external mechanical vibration and impact excitation are eliminated, the local shear rate inside the system decreases below the critical shear rate threshold of the piezoelectric-doped shear-thickening gel. The shear-thickening nanoparticles inside the piezoelectric-doped shear-thickening gel deagglomerate, causing the gel to return to a low-viscosity liquid state. Subsequently, the negative Poisson's ratio microstructure array recovers to its initial configuration due to material elasticity. The cell pores expand, generating local negative pressure, which draws the piezoelectric-doped shear-thickening gel that entered the microfluidic pressure relief channel back into the cell pores. At the same time, the polarization charge on the surface of the piezoelectric nanoparticles dissipates, and the local equivalent dielectric constant falls back to the reference value, thus improving the resistance of the DDR module connector. The vibration-enhanced structure completes physical unloading and returns to its normal assembly state. The negative Poisson's ratio micro-skeleton array is composed of continuous concave polygonal cells. The concave polygonal cells adopt a concave hexagonal topology, which includes two vertical cantilever arms and four inclined sidewalls. The two vertical cantilever arms are arranged in parallel to each other, and the length direction of the two vertical cantilever arms is parallel to the longitudinal depth direction of the slot. The two ends of the vertical cantilever arms have end connection nodes. The four inclined sidewalls are divided into two groups and are connected between the end connection nodes of the two vertical cantilever arms respectively. The inclined sidewalls are inclined towards the internal geometric center of the concave polygonal cells, so that the adjacent vertical cantilever arms and inclined sidewalls form a concave angle.

[0032] Multiple concave polygonal cells are arranged in a periodic array in a two-dimensional plane parallel to the sidewall surface of the slot. In the longitudinal depth direction, adjacent concave polygonal cells are connected in series by sharing the end connection nodes of the vertical cantilever. In the transverse direction perpendicular to the longitudinal depth direction, adjacent concave polygonal cells are connected in parallel by sharing the vertical cantilever, forming a two-dimensional network structure. The bottom end connection nodes of the negative Poisson's ratio micro-skeleton array are fixedly connected to the bottom wall of the insulating body, while the top end connection nodes of the negative Poisson's ratio micro-skeleton array are in an unfixed state as the force-bearing end.

[0033] When the DDR module undergoes longitudinal displacement, relying on the surface friction coupling between the DDR module and its edge, the DDR module applies longitudinal tensile stress to the top end connection node of the negative Poisson's ratio microstructure array, causing the vertical cantilever to displace longitudinally. The longitudinal tensile stress is transmitted to the inclined sidewalls, forcing the inclined sidewalls to bend and rotate rigidly around the end connection node. This results in an increase in the angle of the concave angle, and the four inclined sidewalls deflect outwards from the internal geometric center.

[0034] The deflection motion of the inclined sidewall is converted into a lateral displacement component perpendicular to the longitudinal depth, and the concave angle is set as... The length of the vertical cantilever is The length of the inclined sidewall is The equivalent Poisson's ratio of a negative Poisson's ratio microstructure array Satisfying Relationship: Based on the concave configuration of the inclined sidewalls, the equivalent Poisson's ratio When the value is negative, under the continuous action of longitudinal tensile stress, the lateral displacement component generates geometric superposition in the periodic array arrangement, causing the entire negative Poisson's ratio micro-skeleton array to expand laterally. The lateral expansion amplifies the longitudinal tensile strain inside the input system and converts it into a lateral physical clamping force on the edge surface of the DDR module. Asymmetric dielectric rails are attached to the outer surface of the concave polygonal cell. The asymmetric dielectric rails are conductive metal thin film structures and are only laid on the outer surface facing the metal terminal array. The inner surface of the concave polygonal cell does not contain a metal plating layer and remains in an insulating state, thus forming a spatially asymmetric dielectric layer. The asymmetric dielectric rails extend along the two-dimensional mesh structure of the negative Poisson's ratio micro-skeleton array, forming a continuous conductive network consistent with the topology of the concave polygonal cell.

[0035] The bottom of the continuous conductive network is integrated with a bottom bus terminal. The bottom bus terminal is physically connected to the pre-embedded metal traces laid inside the insulating body. The pre-embedded metal traces extend downward along the solid interior of the insulating body, and their ends are welded to the grounding pin. This allows the asymmetric dielectric rails, the pre-embedded metal traces, and the grounding pin to jointly construct a bypass discharge channel for high-frequency radio frequency signals.

[0036] The microfluidic pressure relief channel is located in the bottom space of the insulating body. Its main body extends horizontally and penetrates the bottom solid structure of the insulating body. The liquid inlet is located at the top of the microfluidic pressure relief channel and penetrates the bottom wall of the insulating body vertically. The longitudinal projection of the liquid inlet covers the concave polygonal cell at the bottom layer of the negative Poisson's ratio micro-skeleton array, so that the liquid inlet and the cell pores inside the concave polygonal cell are interconnected.

[0037] The liquid outlet is located at the horizontal end of the microfluidic pressure relief channel and is opened on the outer surface of the bottom of the insulating body. To prevent internal fluid loss, a thermally conductive elastic film is encapsulated at the liquid outlet. The inner wall of the microfluidic pressure relief channel has a variable cross-sectional shrinkage shape with a cross-sectional area that gradually decreases along the fluid flow direction to provide fluid flow resistance space inside. The outer surface of the bottom of the insulating body is configured as a thermally conductive interface, which is suitable for contact with the external heat dissipation module on the external motherboard, and the horizontal cross-section of the liquid outlet is distributed towards the thermally conductive interface.

[0038] When the piezoelectric-doped shear-thickening gel is pressurized and enters the microfluidic pressure relief channel, it moves along a variable cross-section contraction shape, carrying the internal frictional heat generated by mechanical vibration to the liquid outlet. The internal frictional heat is conducted to the external heat dissipation module through a thermally conductive elastic film for heat dissipation. The microfluidic pressure relief channel provides physical volume buffer space while working with the external heat dissipation module to unload mechanical stress and dissipate internal heat. The piezoelectric-doped shear-thickening gel includes a base liquid, shear-thickening nanoparticles, and piezoelectric nanoparticles. The base liquid is made of low molecular weight polyethylene glycol (e.g., PEG-200 or PEG-400) and serves as the continuous phase fluid medium for the piezoelectric-doped shear-thickening gel. The shear-thickening nanoparticles added to the base liquid are amorphous silica nanospheres with an average particle size distribution range of 100 nm to 500 nm and a mass fraction of 15% to 35% in the base liquid. The base liquid and shear-thickening nanoparticles are mixed to form a shear-thickening dispersion system, in which the piezoelectric nanoparticles are uniformly suspended and distributed.

[0039] The surface of the shear-thickening nanoparticles is grafted with a silane coupling agent molecular layer. The silane coupling agent molecular layer creates a steric hindrance effect inside the base liquid. This steric hindrance effect can overcome the van der Waals attraction between the shear-thickening nanoparticles in a static assembly state or a low shear strain rate physical environment. This causes the shear-thickening dispersion system to maintain a fluid thermodynamic equilibrium state dominated by Brownian motion, thereby giving the piezoelectric doped shear-thickening gel macroscopically low viscosity fluid characteristics.

[0040] When the negative Poisson's ratio micro-skeleton array transmits mechanical vibration energy inward, the local shear rate inside the shear thickening dispersion system increases. When the local shear rate reaches the set critical shear rate threshold, the hydrodynamic lubrication between adjacent shear thickening nanoparticles of the base fluid fails. At this time, the external mechanical energy provided by the mechanical vibration energy overcomes the repulsive barrier added by the steric hindrance effect of the silane coupling agent molecular layer.

[0041] The rheological state of a shear-thickened dispersion system is defined by a power-law equation relating apparent viscosity to shear rate. The apparent viscosity of the shear-thickened dispersion system is set as... The local shear rate is The fluid consistency coefficient is The mobility behavior index is Its rheological equations satisfy: Flow behavior index under static assembly state or low shear strain rate physical environment satisfy When the local shear rate reaches the critical shear rate threshold, the flow behavior index Mutation occurs and satisfies .

[0042] Accompanying Flow Behavior Index The sudden change in shear-thickening nanoparticles leads to physical collisions and mechanical aggregation in the fluid shear flow field, forming a rigid particle cluster network that penetrates the space of the base liquid. This rigid particle cluster network blocks the continuous flow path of the base liquid, causing the apparent viscosity of the shear-thickening dispersion system to increase exponentially. This completes the rheological state transition from liquid phase change to high-rigidity solid. The exponential increase in apparent viscosity causes the piezoelectric-doped shear-thickening gel to convert mechanical vibration kinetic energy into internal frictional heat in the fluid, thereby establishing physical damping within the concave polygonal cell to restrict the micro-displacement of the DDR module. The piezoelectric nanoparticles in the piezoelectric-doped shear-thickening gel are uniformly suspended and distributed within the shear-thickening dispersion system. The piezoelectric nanoparticles are made of tetragonal barium titanate nanoparticles with an average particle size distribution range of 50 nm to 150 nm, and a mass fraction of 5% to 15% in the total mass of the piezoelectric-doped shear-thickening gel. To achieve uniform doping, the piezoelectric nanoparticles are uniformly dispersed into the shear-thickening dispersion system through ultrasonic dispersion and high-shear mechanical stirring processes.

[0043] In addition, the piezoelectric nanoparticles are coated with a surfactant molecular layer. The surfactant molecular layer creates a steric hindrance effect inside the base liquid. This steric hindrance effectively prevents the spontaneous physical aggregation of piezoelectric nanoparticles. This allows the piezoelectric nanoparticles to maintain an isotropic and uniform distribution between the base liquid and the shear-thickening nanoparticles, thereby ensuring the spatial consistency of the mechanical and electrical response properties inside the piezoelectric-doped shear-thickening gel.

[0044] When external mechanical vibration energy causes a rheological phase transition in a shear-thickening dispersion system and forms a rigid particle cluster network, the rigid particle cluster network constructs a microscopic mechanical transmission medium inside the cell pores of the concave polygonal cell. The rigid particle cluster network converts the lateral expansion and extrusion force transmitted by the negative Poisson's ratio micro-skeleton array into microscopic compressive stress. Since the piezoelectric nanoparticles are embedded in the three-dimensional network pores of the rigid particle cluster network, the microscopic compressive stress formed by the mutual extrusion of the shear-thickening nanoparticles that undergo mechanical aggregation directly acts on the outer surface of the piezoelectric nanoparticles along the force chain path inside the rigid particle cluster network.

[0045] Piezoelectric nanoparticles capture microscopic compressive stress and undergo lattice deformation. This deformation disrupts the coincidence of positive and negative charge centers within the tetragonal barium titanate nanoparticles, generating polarized bound charges on the outer surface of the nanoparticles. The number of polarized bound charges is directly proportional to the microscopic compressive stress, establishing a local micro-electric field within and around the concave polygonal cell. This local micro-electric field increases the local equivalent dielectric constant of the piezoelectric-doped shear-thickening gel, thereby increasing the dynamic decoupling capacitance between the metal terminal array and the asymmetric dielectric rails. The increase in value reduces the high-frequency AC impedance of the system, thereby utilizing the asymmetric dielectric rail to bypass and absorb and discharge high-frequency stray electromagnetic signals. Based on the aforementioned physical properties of the negative Poisson's ratio microstructure array and piezoelectric doped shear thickening gel, the vibration-enhancing structure of the DDR module connector establishes an adaptive mechanical locking mechanism for the edge of the DDR module under mechanical vibration environment. When the DDR module generates a longitudinal micro-displacement away from the bottom of the slot due to external mechanical vibration excitation, the longitudinal micro-displacement is converted into longitudinal tensile strain input to the negative Poisson's ratio microstructure array through surface friction coupling.

[0046] Longitudinal tensile strain triggers topological deformation of concave polygonal cells, based on the equivalent Poisson's ratio of the concave polygonal cells. The characteristic of a negative value is that the concave polygon cell outputs a lateral expansion displacement in the direction perpendicular to the longitudinal depth, thereby forming lateral strain. Lateral expansion displacement eliminates the original assembly gap between the negative Poisson's ratio micro-skeleton array and the edge surface of the DDR module, thereby applying a lateral physical clamping force to the edge surface of the DDR module.

[0047] With the generation of longitudinal micro-displacement, the local shear rate inside the cell pores increases synchronously. When the local shear rate exceeds the critical shear rate threshold of the piezoelectric doped shear thickening gel, the shear thickening nanoparticles inside the piezoelectric doped shear thickening gel construct a rigid particle cluster network that penetrates the base liquid. This enables the piezoelectric doped shear thickening gel to complete the rheological phase transition from a low-viscosity liquid to a high-rigidity solid, and its material elastic modulus undergoes a step increase.

[0048] Following a rheological phase transition, the piezoelectric-doped shear-thickened gel fills and physically supports the internal structural space of the concave polygonal cell. The topological stiffness of the concave polygonal cell and the material stiffness of the solidified piezoelectric-doped shear-thickened gel form a mechanical superposition, jointly determining the equivalent composite modulus of the negative Poisson's ratio microstructure array. The equivalent composite modulus is set as... The effective contact area between the DDR module and the negative Poisson's ratio microstructure array is The transverse strain induced by longitudinal tensile strain is The dynamic clamping force output by the adaptive mechanical locking mechanism Satisfy the following mathematical model: Due to the rheological phase transition of the piezoelectric-doped shear-thickened gel, the dramatic increase in its elastic modulus leads to an increase in the equivalent composite modulus. The shear strain rate exhibits a nonlinear growth pattern, which in turn affects the dynamic clamping force output by the aforementioned linear physical model. On a macroscopic level, the energy input by external mechanical vibration increases nonlinearly and significantly, forming a physical damping resistance against longitudinal micro-displacement. This physical damping resistance rigidly locks the DDR module inside the slot, restricting the spatial degrees of freedom of the DDR module and preventing fretting wear caused by relative slippage between the metal terminal array and the gold fingers of the DDR module. Based on the aforementioned phase-change hardened piezoelectric doped shear-thickening gel and the internally constructed rigid particle cluster network, the vibration-enhancing structure of the DDR module connector provides physical damping resistance while simultaneously constructing a signal decoupling compensation mechanism for electromechanical coupling. During the process of the rigid particle cluster network bearing external mechanical vibration energy and structural extrusion force, a three-dimensional spatially distributed micro-mechanical stress field is generated inside the rigid particle cluster network. The rigid particle cluster network directly transmits the micro-mechanical stress field to the piezoelectric nanoparticles embedded in the network pores.

[0049] Under the continuous action of a micro-mechanical stress field, piezoelectric nanoparticles undergo lattice structure deformation. This deformation causes a rearrangement of the electric dipole moments inside the piezoelectric nanoparticles, inducing polarization-bound charges on the outer surface of the nanoparticles based on the positive piezoelectric effect. The large accumulation of polarization-bound charges alters the local micro-electric field distribution inside the piezoelectric-doped shear-thickening gel. This change in the local micro-electric field distribution leads to a nonlinear increase in the overall equivalent dielectric constant of the piezoelectric-doped shear-thickening gel.

[0050] In terms of spatial arrangement, piezoelectric-doped shear-thickening gel physically fills the space between the asymmetric dielectric rails and the metal terminal array. Together, these three elements constitute an equivalent capacitance physical model with the piezoelectric-doped shear-thickening gel as the core medium. The nonlinear increase in the overall equivalent dielectric constant leads to the formation of a dynamically changing decoupling capacitor between the asymmetric dielectric rails and the metal terminal array. The overall equivalent dielectric constant at this point is set to... The area of ​​the asymmetric dielectric rails and the metal terminal array that form capacitive coupling is... The effective physical dielectric spacing between the two is Dynamic capacitance of decoupling capacitor Satisfy the following mathematical model: Under mechanical vibration conditions, high-frequency transient fluctuations in contact resistance inevitably occur between the metal terminal array and the gold fingers of the DDR module. This, in turn, generates transient high-frequency noise signals in the digital signal transmission link. Based on the physical principles of AC impedance, the decoupling capacitor exhibits capacitive reactance and dynamic capacitance for AC signals. And the dynamic capacitance is inversely proportional to the electrical signal frequency; therefore, the dynamic capacitance value... The increase significantly reduces the AC impedance between the asymmetric dielectric rail and the metal terminal array for transient high-frequency noise signals.

[0051] The reduced AC impedance guides transient high-frequency noise signals away from the original data transmission path, allowing the asymmetric dielectric rail to absorb transient high-frequency noise signals through spatial capacitive coupling effects. These signals are then guided to the grounding pin via pre-embedded metal traces physically connected to the rail, thus achieving electrical bypass discharge. This mechanism enables the adjustment of electrical parameters driven by mechanical stress, compensating for the high-frequency signal integrity under mechanical vibration conditions. Based on the previously disclosed spatial connectivity of the phase-change hardened piezoelectric doped shear-thickening gel and the microfluidic pressure relief channel, the vibration-enhancing structure of the DDR module connector possesses an overload fluid unloading mechanism under non-periodic extreme mechanical impact conditions. When encountering external extreme mechanical impact, the resulting transient overload impact stress is transmitted through the DDR module and directly acts on the insulating body and the negative Poisson's ratio microstructure array. The transient overload impact stress forces the concave polygonal cells to undergo macroscopic compression deformation, resulting in a reduction in the volume of the cell pores inside the concave polygonal cells, thereby applying compressive stress to the piezoelectric doped shear-thickening gel in the phase-change hardened state.

[0052] When the compressive stress exceeds the structural yield limit of the rigid particle cluster network, the compressive stress disrupts the mechanical equilibrium structure of the rigid particle cluster network inside the piezoelectric doped shear thickening gel. This causes the piezoelectric doped shear thickening gel to undergo structural disintegration and restore macroscopic fluidity. The piezoelectric doped shear thickening gel, now restored to macroscopic fluidity, flows under pressure into the microfluidic pressure relief channel through the inlet opening and moves towards the outlet opening along the variable cross-section contraction shape inside the microfluidic pressure relief channel. During the fluid movement and work, the mechanical energy carried by the transient overload impact stress is converted into the fluid displacement potential energy and viscous frictional heat energy of the piezoelectric doped shear thickening gel, thereby achieving stress unloading on the insulating body structure and preventing brittle fracture of the insulating body.

[0053] The piezoelectric-doped shear-thickening gel carries viscous frictional heat energy to the liquid outlet at the end of the microfluidic pressure relief channel and contacts and pushes against the thermally conductive elastic film that seals the liquid outlet. Under the pressure of the fluid, the thermally conductive elastic film undergoes elastic deformation to provide additional physical accommodation space. At the same time, the thermally conductive elastic film conducts viscous frictional heat energy to the external heat dissipation module that is attached to it. Subsequently, the external heat dissipation module dissipates the viscous frictional heat energy to the external environment of the system, realizing the cross-domain dissipation of mechanical energy into thermal energy.

[0054] After the energy of the ultimate mechanical impact is dissipated, the transient overload impact stress acting on the concave polygonal cell is eliminated. The thermally conductive elastic film recovers its initial flat configuration due to material elasticity and applies a reverse push pressure to the piezoelectrically doped shear-thickening gel inside the microfluidic pressure relief channel. Simultaneously, the concave polygonal cell recovers its original configuration due to topological elasticity, causing the volume of the cell pores to expand and generating a local negative pressure at the liquid inlet. The local negative pressure and the reverse push pressure together drive the piezoelectrically doped shear-thickening gel to flow back into the cell pores along the microfluidic pressure relief channel. Finally, the piezoelectrically doped shear-thickening gel refills the cell pores, allowing the DDR module to... The vibration-resistant reinforcement structure of the block connector is restored to its initial assembly and ready state. Based on the aforementioned disclosed solid topological features of the insulating body, negative Poisson's ratio micro-skeleton array, and microfluidic pressure relief channel, the basic three-dimensional framework of the vibration-resistant reinforcement structure of the DDR module connector is manufactured in an integrated manner using projection micro-stereolithography. The three-dimensional structural model data characterizing the insulating body, negative Poisson's ratio micro-skeleton array, microfluidic pressure relief channel, and reserved wiring trenches for laying pre-embedded metal wiring are imported into the projection micro-stereolithography equipment. The working tank of the projection micro-stereolithography equipment is loaded with a high-temperature resistant liquid crystal polymer photosensitive resin solution as the molding substrate.

[0055] The projection micro-stereolithography equipment projects a specific wavelength of ultraviolet light beam based on three-dimensional structural model data. The ultraviolet light beam performs layer-by-layer exposure on the surface of a high-temperature resistant liquid crystal polymer photosensitive resin solution. The high-temperature resistant liquid crystal polymer photosensitive resin solution excited by the ultraviolet light beam undergoes free radical polymerization and cross-linking. The solidified resin material is built up layer by layer to construct the outer shell of the insulating body. While forming the insulating body, the projection micro-stereolithography equipment uses layer exposure parameter control to simultaneously generate concave polygonal cells of negative Poisson's ratio micro-skeleton array on both sides of the slot and microfluidic pressure relief channels at the bottom. This integrated molding technology eliminates the assembly tolerances that exist in separate manufacturing.

[0056] The integrally molded insulating body is removed from the projection micro-stereolithography equipment and ultrasonically cleaned using isopropanol cleaning solution. This ultrasonic cleaning process is used to remove unreacted resin solution remaining in the cell pores of the concave polygonal cells and in the microfluidic pressure relief channels. After cleaning, the insulating body enters the ultraviolet curing chamber for secondary light curing treatment to promote the complete cross-linking of the monomer molecules remaining in the insulating body and establish a mechanical stiffness base that meets the physical stress conditions of assembly.

[0057] In the selective metallization process, the insulating body undergoes surface plasma bombardment activation treatment. This treatment generates polar oxygen-containing functional groups on the surface of the negative Poisson's ratio microstructure array, thereby increasing the surface free energy of the concave polygonal cell surface. This increase in surface free energy improves the physical interface bonding between the conductive metal target particles and the resin matrix.

[0058] A metallization mask is placed on the surface of the insulating body. (For the narrow microscopic three-dimensional spatial structure of the slot, a three-dimensional sprayed photoresist sacrificial layer technique or a combination of structural shadow shielding effect can be used for local masking.) This allows the solid area of ​​the metallization mask to cover and mask the inner surface of the concave polygonal cell and the insulating area of ​​the insulating body, while its cutout area precisely exposes the outer surface of the concave polygonal cell and the internal reserved wiring trenches. Considering the longitudinal depth dimension of the slot, a tilted angle rotating magnetron sputtering process is adopted. The magnetron sputtering equipment continuously targets and deposits conductive metal target particles (preferably copper, gold, or silver target particles) onto the exposed outer surface, causing the conductive metal target particles to crystallize and grow on the exposed outer surface to form a conductive metal thin film structure with conductive properties (i.e., asymmetric dielectric rails).

[0059] During the process of forming asymmetric dielectric rails using magnetron sputtering equipment, pre-embedded metal traces are simultaneously deposited inside the reserved trace grooves, thereby enabling the asymmetric dielectric rails and pre-embedded metal traces to achieve integrated physical conductivity. After removing the metallization mask, the metal terminal array and grounding pins are mechanically embedded and pressed into the corresponding mounting positions inside the insulating body. The grounding pins in the embedded state and the ends of the pre-embedded metal traces establish a rigid physical pressing and electrical conductivity network. Based on the rigid physical pressing and electrical conductivity network established by the grounding pins in the embedded state and the ends of the pre-embedded metal traces, the piezoelectric doped shear thickening gel in a low-viscosity liquid state and the embedded insulating body are simultaneously placed into the working chamber of the vacuum differential pressure infusion equipment. In order to construct the fluid infusion path, the part of the insulating body containing concave polygonal cells is immersed below the liquid surface of the piezoelectric doped shear thickening gel. Subsequently, the vacuum differential pressure infusion equipment extracts the air inside the working chamber to establish a set reference vacuum environment.

[0060] The reference vacuum environment causes residual gas in the cell pores inside the concave polygonal cell and the microfluidic pressure relief channel to overflow. After the gas is vented, the vacuum differential pressure infusion device applies positive pressure to the surface of the piezoelectric doped shear thickening gel in a low viscosity liquid state, so that the piezoelectric doped shear thickening gel is driven by the ambient pressure difference to immerse into the structural gaps inside the insulating body.

[0061] During infusion, the vacuum differential pressure infusion equipment controls the flow rate of the piezoelectric doped shear-thickening gel, ensuring that the local shear rate of the piezoelectric doped shear-thickening gel flowing through the concave polygonal cell is below the critical shear rate threshold. This limitation on the local shear rate ensures that the piezoelectric doped shear-thickening gel maintains macroscopic fluid flow during infusion, preventing phase transition and aggregation of the shear-thickening nanoparticles inside the piezoelectric doped shear-thickening gel. This ensures that the piezoelectric doped shear-thickening gel fills the cell pores and microfluidic pressure relief channels without damage.

[0062] The insulating body containing piezoelectric doped shear thickening gel is removed from the vacuum differential pressure infusion device, and a thermally conductive elastic film is covered at the liquid outlet at the end of the microfluidic pressure relief channel. The edge of the thermally conductive elastic film is then welded and sealed to the outer surface of the bottom of the insulating body using an ultrasonic welding device, thereby blocking the physical path of the piezoelectric doped shear thickening gel from leaking out of the liquid outlet.

[0063] UV-curable sealing resin is injected around the open end of the top of the insulating body that contacts the negative Poisson's ratio microstructure array. The UV-curable sealing resin covers the top end connection nodes of the negative Poisson's ratio microstructure array and the open ends of the exposed cell pores. The UV-curable sealing resin is irradiated at specific points using a UV light source of a specific wavelength, causing the UV-curable sealing resin to undergo an in-situ cross-linking reaction under UV excitation, curing to form an elastic sealing film layer with physical elasticity. The elastic sealing film layer is tightly attached to the solid structure of the insulating body and forms a closed cavity. The closed cavity cuts off the physical evaporation path of the base liquid inside the piezoelectric doped shear thickening gel, maintaining the stability of the internal chemical components of the piezoelectric doped shear thickening gel, thereby completing the integrated fabrication and encapsulation of the vibration-resistant reinforcement structure of the DDR module connector.

[0064] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A vibration-resistant enhancement structure for a DDR module connector, characterized in that: It includes an insulating body, a negative Poisson's ratio microstructure array, a piezoelectric doped shear thickening gel, an asymmetric dielectric rail, and a microfluidic pressure relief channel; The insulating body has a slot for accommodating a DDR module inside. The insulating body has metal terminal arrays embedded longitudinally on both sides of the slot. The bottom edge of the insulating body has a grounding pin. The insulating body has a pre-reserved wiring groove. The pre-reserved wiring groove is filled with a pre-embedded metal wiring. One end of the pre-embedded metal wiring is connected to the grounding pin, and the other end extends to the surface of the slot side wall. The negative Poisson's ratio microstructure array is attached to the two side walls of the slot and is spatially misaligned with the metal terminal array, embedded in the gap area between two adjacent metal terminals in the metal terminal array. The negative Poisson's ratio microstructure array is composed of continuous concave polygonal cells connected together. Cell pores are formed inside the concave polygonal cells. Each cell pore is interconnected to form a three-dimensional pore network. The top layer of concave polygonal cells forms an open end facing the top of the slot. The piezoelectric doped shear thickening gel fills the cell pores. The piezoelectric doped shear thickening gel includes a base liquid and shear thickening nanoparticles and piezoelectric nanoparticles suspended in the base liquid. An elastic sealing film layer is provided at the open end to seal the piezoelectric doped shear thickening gel in the cell pores. The asymmetric dielectric rail is a conductive metal thin film structure, attached to the outer surface of the concave polygon cell, and electrically connected to the grounding pin through the pre-embedded metal trace. The microfluidic pressure relief channel is formed in the bottom space of the insulating body. The microfluidic pressure relief channel has a liquid inlet and a liquid outlet. The liquid outlet is encapsulated with a thermally conductive elastic film. The liquid inlet penetrates the bottom wall of the insulating body and is connected to the cell pores of the concave polygonal cell in the bottom layer.

2. The vibration-resistant reinforcement structure of a DDR module connector according to claim 1, characterized in that: The concave polygonal cell adopts a concave hexagonal topological configuration, including two parallel vertical cantilever arms and four inclined sidewalls. The length direction of the two vertical cantilever arms is parallel to the longitudinal depth direction of the slot. The four inclined sidewalls are divided into two groups and are respectively connected between the end connection nodes of the two vertical cantilever arms. The inclined sidewalls are inclined towards the inner geometric center and form a concave angle with the adjacent vertical cantilever arms. Multiple concave polygonal cells are connected in series by sharing the end connection nodes in the longitudinal depth direction and are connected in parallel by sharing the vertical cantilever arms in the transverse direction perpendicular to the longitudinal depth direction to form a two-dimensional mesh structure.

3. The vibration-resistant reinforcement structure of a DDR module connector according to claim 2, characterized in that: The asymmetric dielectric rails are laid only on the outer surface facing the metal terminal array. The inner surface of the concave polygonal cell remains insulated to form a spatially asymmetric dielectric layer. The asymmetric dielectric rails extend along the two-dimensional mesh structure to form a continuous conductive network. The bottom of the continuous conductive network is integrally formed with a bottom bus terminal, which physically overlaps with the pre-embedded metal trace.

4. The vibration-resistant reinforcement structure of a DDR module connector according to claim 1, characterized in that: The main body of the microfluidic pressure relief channel extends horizontally, and the inner wall of the microfluidic pressure relief channel has a variable cross-sectional shrinkage shape with a cross-sectional area that gradually decreases along the fluid flow direction. The outer surface of the bottom of the insulating body is configured as a thermally conductive interface, and the horizontal cross-section of the liquid outlet is distributed towards the thermally conductive interface. The thermally conductive interface is suitable for contact with an external heat dissipation module.

5. The vibration-resistant reinforcement structure of a DDR module connector according to claim 1, characterized in that: The shear-thickening nanoparticles are amorphous silica nanospheres with a silane coupling agent molecular layer grafted on their surface, and the piezoelectric nanoparticles are tetragonal barium titanate nanoparticles with a surfactant molecular layer on their outer surface.

6. The vibration-resistant reinforcement structure of a DDR module connector according to claim 5, characterized in that: The average particle size distribution range of the shear-thickening nanoparticles is 100 nm to 500 nm, and the mass fraction in the base liquid is 15% to 35%. The average particle size distribution range of the piezoelectric nanoparticles is 50 nm to 150 nm, and the mass fraction in the total mass of the piezoelectric doped shear-thickening gel is 5% to 15%.

7. The vibration-resistant reinforcement structure of a DDR module connector according to claim 1, characterized in that: The negative Poisson's ratio microstructure array exhibits a negative Poisson's ratio effect, resulting in lateral expansion deformation when subjected to longitudinal tensile strain. The shear-thickening nanoparticles possess rheological phase transition properties, causing the shear-thickening nanoparticles inside the piezoelectric-doped shear-thickening gel to mechanically aggregate and form a rigid particle cluster network when subjected to local shear exceeding the critical shear rate threshold, transforming from a liquid phase to a highly rigid solid. The negative Poisson's ratio microstructure array, in conjunction with the solid-state piezoelectric-doped shear-thickening gel, restricts the relative slippage of the DDR module.

8. The vibration-resistant reinforcement structure of a DDR module connector according to claim 7, characterized in that: The piezoelectric nanoparticles exhibit a positive piezoelectric effect. They are embedded in the pores formed within the rigid particle cluster network and undergo lattice structure deformation and generate polarized bound charges under the compressive stress of the rigid particle cluster network. These polarized bound charges are used to increase the local equivalent dielectric constant of the piezoelectric doped shear thickening gel, thereby forming a decoupling capacitor with dynamically increasing capacitance between the asymmetric dielectric rails and the metal terminal array.

9. The vibration-resistant reinforcement structure of a DDR module connector according to claim 8, characterized in that: The structural yield limit of the piezoelectric-doped shear-thickening gel is configured to be lower than the brittle fracture stress of the insulating body, so that when subjected to extreme mechanical impact and exceeding the structural yield limit, the piezoelectric-doped shear-thickening gel restores macroscopic fluidity and flows under pressure into the microfluidic pressure relief channel through the liquid inlet. The thermally conductive elastic film at the liquid outlet has elastic recovery force, which, together with the local negative pressure brought about by the restoration of the initial configuration of the cell pores, is used to draw the piezoelectric-doped shear-thickening gel back into the cell pores after the mechanical impact is eliminated.

10. A method for preparing the vibration-resistant reinforcement structure of the DDR module connector according to any one of claims 1-9, characterized in that, The preparation method includes the following steps: S1. Import the three-dimensional structural model data characterizing the insulating body, the negative Poisson's ratio micro-skeleton array, the microfluidic pressure relief channel and the reserved wiring trench into the projection micro-stereolithography equipment, and use photosensitive resin solution to perform integrated molding to establish a mechanically rigid base. S2. Perform surface plasma bombardment activation treatment on the insulating body, place a metallization mask and use magnetron sputtering to target and deposit conductive metal target particles, and simultaneously form the asymmetric dielectric rail and the pre-embedded metal trace; after removing the metallization mask, mechanically embed and press the metal terminal array and the grounding pin into the interior of the insulating body, so that the grounding pin and the pre-embedded metal trace form an electrical connection; S3. Immerse the portion containing the concave polygonal cell below the liquid surface of the piezoelectric doped shear thickening gel and place it in a vacuum differential pressure infusion device. After establishing a reference vacuum environment and venting the air, apply a positive infusion pressure to the liquid surface. Under the condition that the local shear rate is controlled to be lower than the critical shear rate threshold, the piezoelectric doped shear thickening gel fills the cell pores and the microfluidic pressure relief channel. S4. Cover the liquid outlet with the thermally conductive elastic film and weld it in place. Inject UV-curable sealing resin around the open end and apply UV light to the point of application to form the elastic sealing film layer through in-situ crosslinking reaction.

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