Symmetrical stacked integrated 10-kilowatt class GaN solid-state microwave power source system

Abstract

This invention discloses a symmetrically stacked integrated 10,000-watt GaN solid-state microwave power source system. Multiple kilowatt-level GaN power devices are integrated in an array on a stacked microfluidic heat dissipation substrate. An array-type power control unit is connected to each kilowatt-level GaN power device to drive the power devices and control radio frequency signals. A separate microwave source integration unit is connected to each kilowatt-level GaN power device to receive output signals and achieve high-power output for the entire system. The overall solution of this invention adopts a symmetrical stacking structure, symmetrically mirroring and stacking the kilowatt-level GaN power units with the microfluidic heat dissipation substrate. Power combining is performed using a separate structure, ensuring efficient heat dissipation and power output capabilities. This achieves high integration and high reliability of the 10,000-watt solid-state microwave power source, significantly reducing the size of the power source.

Description

Technical Field

[0001] This invention belongs to the field of research and development of high-power solid-state microwave devices, specifically a symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system. Background Technology

[0002] High-quality, large-size diamond materials, as potential next-generation semiconductor materials and high thermal conductivity materials, are widely used in high-power device integration and the development of novel semiconductor devices. However, current high-power microwave source systems for large-size diamond material development mostly employ magnetron microwave sources, which are insufficient to meet the high-quality requirements of diamond development. While GaN-based microwave sources possess high frequency and power stability and long lifespan, they still lag behind magnetron microwave sources in terms of integration density, especially in high-power integration. Furthermore, the mechanical alignment of waveguide integration interfaces further affects the output characteristics of solid-state microwave power sources due to alignment deviations. These shortcomings severely limit their application in diamond growth equipment. Therefore, there is an urgent need to design and fabricate highly integrated, kilowatt-level GaN solid-state microwave power sources to solve the integration density and mechanical alignment problems, thereby enhancing the application capabilities of GaN solid-state microwave power sources in diamond growth. This is of fundamental and urgent importance for meeting the growth requirements of high-quality, large-size diamond semiconductor materials and supporting the leapfrog development of diamond semiconductor devices. Summary of the Invention

[0003] To address the aforementioned problems, the present invention aims to provide a symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system.

[0004] The specific technical solution for achieving the objective of this invention is as follows:

[0005] A symmetrical stacked integrated kilowatt-level GaN solid-state microwave power source system includes an array of kilowatt-level GaN power units, a stacked microfluidic heat dissipation substrate, an array of power control units, and a separate microwave source integration unit.

[0006] The array-type kilowatt-level GaN power unit includes multiple kilowatt-level GaN power devices, which are integrated in an array on a stacked microfluidic heat dissipation substrate.

[0007] The array-type power control unit is connected to each kilowatt-level GaN power device to realize the driving and radio frequency signal control of each kilowatt-level GaN power device.

[0008] The separate microwave source integration unit is connected to each kilowatt-level GaN power device, receives the output signals of each kilowatt-level GaN power device, and realizes the high-power output of the entire system.

[0009] Furthermore, the stacked microfluidic heat dissipation substrate includes a substrate body and parallel microchannels;

[0010] The multiple kilowatt-level GaN power devices are symmetrically arranged in a stacked manner on the substrate body. A parallel microchannel is set in the center of the substrate body. Each parallel microchannel is an array structure and corresponds to the kilowatt-level GaN power devices on both sides.

[0011] The stacked microfluidic heat dissipation substrate has liquid inlets and outlets on both sides to achieve liquid supply and cooling of the parallel microfluidic channels.

[0012] Furthermore, the array-type power control unit is arranged between symmetrically arranged kilowatt-level GaN power devices and includes an electrical signal input control module and a signal control module.

[0013] The array-type power control unit and each kilowatt-level GaN power device are individually controlled based on a one-to-one drive.

[0014] Furthermore, the discrete microwave source integration unit includes a coaxial radio frequency output module and a high-power integrated waveguide output module;

[0015] The coaxial flexible radio frequency output module corresponds to each kilowatt-level GaN power device and is connected to the high-power integrated waveguide output module. The high-power integrated waveguide output module realizes the high-power output of multiple kilowatt-level GaN power devices.

[0016] Furthermore, the spacing between the microchannels of the stacked microfluidic heat dissipation substrate is consistent with the size of the microchannels.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0018] (1) The overall solution of the present invention adopts a symmetrical stacked structure, and integrates the kilowatt-level GaN power unit and the microfluidic heat dissipation substrate in a symmetrical mirror design and stacking. Power synthesis is carried out using a separate structure, which ensures efficient heat dissipation and power output capabilities, and realizes high integration and high reliability of the 10,000-watt solid-state microwave power source. The size of the power source is greatly reduced. Compared with the power source system of the traditional structure, it has higher integration, smaller size and stronger availability.

[0019] (2) The stacked microfluidic heat dissipation substrate in the present invention adopts a symmetrical microfluidic heat dissipation structure. Each parallel microfluidic channel is an array structure used for heat dissipation of two sets of kilowatt-level GaN power devices, which ensures both heat dissipation capacity and low flow resistance.

[0020] (3) The array-type power control unit in the present invention adopts a one-to-one drive structure to form a single one-to-one control, which ensures the maintainability and economic efficiency of the 10,000-watt power source.

[0021] (4) The separate microwave source integration unit in the present invention integrates the coaxial output module with the waveguide output module using a flexible coaxial cable to achieve control of the output power and frequency at the 10,000-watt level; the waveguide output module is interconnected with the isolator of the diamond growth equipment, which not only meets the docking requirements with the application system, but also solves the problem of reliability and performance degradation caused by mechanical docking.

[0022] The present invention will be further described below with reference to specific embodiments. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system architecture of the present invention.

[0024] Figure 2 This is a schematic diagram of a symmetrically stacked integrated 10,000-watt GaN solid-state microwave power source system in an embodiment of the present invention. Detailed Implementation

[0025] Example

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. The described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0028] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this application. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0029] Combination Figure 1 A symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system includes an array-type kilowatt-level GaN power unit A, a stacked microfluidic heat dissipation substrate B, an array-type power control unit C, and a separate microwave source integration unit D.

[0030] The array-type kilowatt-level GaN power unit A includes multiple kilowatt-level GaN power devices, which are integrated in an array on a stacked microfluidic heat dissipation substrate B.

[0031] The array-type power control unit C is connected to each kilowatt-level GaN power device a, and is used to drive and control the radio frequency signals of each kilowatt-level GaN power device a.

[0032] The separate microwave source integration unit D is connected to each kilowatt-level GaN power device a, receives the output signals of each kilowatt-level GaN power device a, and realizes the high-power output of the entire system.

[0033] This invention employs a symmetrical stacked structure, integrating kilowatt-level GaN power units with a microfluidic heat dissipation substrate through symmetrical mirror design and stacking. By utilizing a discrete structure for power combining, it ensures efficient heat dissipation and power output capabilities, achieving high integration and high reliability of a 10,000-watt solid-state microwave power source. It significantly reduces the size of the power source, resulting in higher integration, smaller size, and greater usability compared to traditional power source systems.

[0034] The stacked microfluidic heat dissipation substrate B includes a substrate body b and parallel microfluidic channels b-1;

[0035] In this embodiment, the plurality of kilowatt-level GaN power devices a are symmetrically arranged in a stacked manner on the substrate body b. Figure 2It can be seen that the kilowatt-level GaN power devices in the array-type kilowatt-level GaN power unit A are divided into two groups, forming two parallel columns, and are mechanically integrated on the substrate body b. At the same time, a high thermal conductivity heat dissipation pad a-1 is set at the connection between the kilowatt-level GaN power device a and the substrate body b to improve the heat transfer capability. Generally speaking, the thickness of the high thermal conductivity heat dissipation pad a-1 is between 50um and 100um to ensure the synergistic effect of mechanical stress and heat transfer capability.

[0036] In this embodiment, 12 kilowatt-level GaN power devices are arrayed on the two surfaces of the substrate body b, which ensures the high integration of the 10,000-watt power source. The output power of a single kilowatt-level GaN power device (a) is 1KW~1.5KW, and the maximum power output of 3.6KW can be achieved in the end.

[0037] A parallel microchannel b-1 is set in the center of the substrate body b. Each parallel microchannel b-1 is an array structure and corresponds to the kilowatt-level GaN power devices on both sides. It is used for heat dissipation of the two sets of kilowatt-level GaN power devices (a), which ensures both heat dissipation capacity and low flow resistance. In addition, the spacing between the microchannels of the stacked microfluidic heat dissipation substrate is consistent with the size of the microchannels.

[0038] In this embodiment, the microchannel (b-1) is 3-6mm in size, and the spacing is consistent with the microchannel size to ensure efficient solid-liquid heat transport; the integrated surface (b-2) is designed to be 2-3mm thick, and the total thickness of the symmetrical integration is designed to be 15-20mm to ensure integration reliability; the stacked microchannels adopt a high-temperature resistant bonding and laser welding process, and the middle aligned integration (b-3) forms a microfluidic heat dissipation substrate, which ensures the heat dissipation capability of the symmetrically stacked kilowatt-level GaN device.

[0039] The stacked microfluidic heat dissipation substrate b has liquid inlets and outlets on both sides to provide liquid cooling for the parallel microfluidic channels, meeting the heat dissipation requirements of the 10,000-watt power source.

[0040] The array-type power control unit C is arranged between symmetrically arranged kilowatt-level GaN power devices, and includes an electrical signal input control module and a signal control module.

[0041] The electrical signal input control module is used to realize the electrical drive of the tens of millions of GaN power devices, and the signal control module mainly realizes the output control of microwave signals for the tens of thousands of GaN power devices.

[0042] The array-type power control unit C and each kilowatt-level GaN power device are driven individually to achieve one-to-one control of the kilowatt-level GaN power device a, enabling external regulation of the power output characteristics of the power source. Damage to one device does not affect the operation of other kilowatt-level GaN power devices a, ensuring the maintainability and economic efficiency of the 10,000-watt power source.

[0043] In this embodiment, the discrete microwave source integrated unit D includes a 2.45GHz coaxial radio frequency output module d-1 and a 915MHz high-power integrated waveguide output module d-2.

[0044] The coaxial flexible radio frequency output module d-1 corresponds to each kilowatt-level GaN power device and is connected to the high-power integrated waveguide output module d-2. The high-power integrated waveguide output module d-2 realizes the high-power output of multiple kilowatt-level GaN power devices.

[0045] The coaxial flexible output module d-1 is integrated with the waveguide output module d-2 using a flexible coaxial cable, achieving 10,000-watt-level output power and frequency control. This ensures frequency stability <0.1%, power stability <2%, integration efficiency >92%, and a maximum integrated output power of 33KW. The waveguide output module d-2 is interconnected with the isolator of the diamond growth equipment, which not only meets the docking requirements of the application system but also solves the problem of reliability and performance degradation caused by mechanical docking.

[0046] In practical use, this solution integrates a symmetrical stacked 10,000-watt GaN solid-state microwave power source with an array of kilowatt-level GaN power units A, a stacked microfluidic heat dissipation substrate B, an array of power control units C, and a separate microwave source integrated unit D. This system is assembled in a 4U standard cabinet through mechanical integration and circuit interconnection. The waveguide output module is located outside the structure and is interconnected with the internal units of the cabinet through flexible cables. It can be directly interconnected with the isolator of the diamond growth equipment.

[0047] This solution adopts a symmetrical stacked structure, which integrates kilowatt-level GaN power units with microfluidic heat dissipation substrates through symmetrical mirror design and stacking. Power combining is performed using a discrete structure, which ensures efficient heat dissipation and power output capabilities. This achieves high integration and high reliability of the 10,000-watt solid-state microwave power source, and significantly reduces the size of the power source. Compared with traditional power source systems, it has higher integration, smaller size, and stronger availability.

[0048] The embodiments described above are merely one implementation method of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system, characterized in that, It includes array-type kilowatt-level GaN power units, stacked microfluidic heat dissipation substrates, array-type power control units, and discrete microwave source integrated units; The array-type kilowatt-level GaN power unit includes multiple kilowatt-level GaN power devices, which are integrated in an array on a stacked microfluidic heat dissipation substrate. The array-type power control unit is connected to each kilowatt-level GaN power device to realize the driving and radio frequency signal control of each kilowatt-level GaN power device. The separate microwave source integration unit is connected to each kilowatt-level GaN power device, receives the output signals of each kilowatt-level GaN power device, and realizes the high-power output of the entire system.

2. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 1, characterized in that, The stacked microfluidic heat dissipation substrate includes a substrate body and parallel microfluidic channels; The multiple kilowatt-level GaN power devices are symmetrically arranged in a stacked manner on the substrate body. A parallel microchannel is set in the center of the substrate body. Each parallel microchannel is an array structure and corresponds to the kilowatt-level GaN power devices on both sides. The stacked microfluidic heat dissipation substrate has liquid inlets and outlets on both sides to achieve liquid supply and cooling of the parallel microfluidic channels.

3. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 2, characterized in that, The array-type power control unit is arranged between symmetrically arranged kilowatt-level GaN power devices and includes an electrical signal input control module and a signal control module. The electrical signal input control module is used to realize the electrical drive of the tens of millions of GaN power devices, and the signal control module mainly realizes the output control of microwave signals for the tens of thousands of GaN power devices. The array-type power control unit and each kilowatt-level GaN power device are individually controlled based on a one-to-one drive.

4. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 2, characterized in that, The discrete microwave source integrated unit includes a coaxial radio frequency output module and a high-power integrated waveguide output module. The coaxial flexible radio frequency output module corresponds to each kilowatt-level GaN power device and is connected to the high-power integrated waveguide output module. The high-power integrated waveguide output module realizes the high-power output of multiple kilowatt-level GaN power devices.

5. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 2, characterized in that, The spacing between the microchannels of the stacked microfluidic heat dissipation substrate is consistent with the size of the microchannels.

6. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 2, characterized in that, A high thermal conductivity heat dissipation pad is provided at the connection between the kilowatt-level GaN power device and the substrate body.

7. The symmetrical stacked integrated 10,000-watt GaN solid-state microwave power source system according to claim 6, characterized in that, The thickness of the high thermal conductivity heat dissipation pad is between 50um and 100um, ensuring a synergistic effect between mechanical stress and heat transfer capacity.

Images