Mother pixel arrangement structure and micro display device

Abstract

This invention relates to a mother pixel arrangement structure and a microdisplay device, comprising a driving backplate and multiple sub-pixels. In two sub-pixels located in different pixel layers, one sub-pixel in the lower pixel layer has an internal channel, and a peripheral light-emitting area is formed around the channel. The projection area of ​​the peripheral light-emitting area on the driving backplate is a second projection area. The other sub-pixel in the upper pixel layer is located above the channel, and its projection area on the driving backplate is a first projection area. The first and second projection areas partially overlap, so that light emitted from the peripheral light-emitting area is at least partially emitted through the periphery of the sub-pixel above the channel. The sub-pixel with the channel and the sub-pixel above the channel are coaxially arranged. This invention also discloses a microdisplay device using the above-described mother pixel arrangement structure. This invention can effectively improve the luminous efficiency and reliability of microdisplay devices, meeting the needs of different application scenarios.

Description

[0001] This application is a divisional application of Chinese invention patent application No. 2026100611563, filed on January 16, 2026, entitled "Mother Pixel Arrangement Structure and Microdisplay Device". Technical Field

[0002] This invention relates to the field of semiconductor technology, and in particular to a mother pixel arrangement structure and a microdisplay device. Background Technology

[0003] Microdisplay devices, characterized by their small size, high resolution, and high brightness, can be applied in numerous fields such as AR / VR devices, automotive displays, medical detection, and smart wearables. Micro-LED and Micro-OLED technologies, in particular, have seen widespread development in recent years. Micro-LED technology, with its advantages of high efficiency, low power consumption, high density, and high stability, is considered one of the most promising next-generation display and light-emitting devices. In the field of microdisplays, to further ensure pixel size and density, multi-color stacking integration is required for color displays. Multi-layer stacked LED devices typically have a driving backplane (with driving circuitry) and multiple layers above it. Pixels are arranged in each layer, and each pixel needs to be electrically connected to the driving backplane. This results in a complex overall structure, significant loss of light-emitting area for each pixel, and difficulty in adjusting the light-emitting area, hindering optimal light distribution. Furthermore, the overall device consumes more power, which is detrimental to the reliability and stability of the LED display. Summary of the Invention

[0004] Therefore, the technical problem to be solved by the present invention is to improve the light efficiency and reliability of micro-display devices in the prior art.

[0005] To address the aforementioned technical problems, this invention provides a mother pixel arrangement structure, comprising:

[0006] Drive backplane;

[0007] Multiple sub-pixels, at least two of which are located in different pixel layers; all of the pixel layers are stacked sequentially from bottom to top above the driving backplate;

[0008] In two sub-pixels located in different pixel layers, one of the sub-pixels in the lower pixel layer has an internal channel, and a peripheral light-emitting area is formed around the channel. The projection area of ​​the peripheral light-emitting area on the driving backplate is a second projection area. The other sub-pixel in the upper pixel layer is located above the channel, and its projection area on the driving backplate is a first projection area. The first projection area and the second projection area... Partial overlapSo that the light emitted from the peripheral light-emitting area is at least partially emitted through the periphery of the sub-pixel above the channel;

[0009] The sub-pixel with the aperture and the sub-pixel above the aperture are coaxially arranged.

[0010] In some embodiments of the present invention, at least two sub-pixels located in different pixel layers are located above the same aperture.

[0011] In some embodiments of the present invention, in the sub-pixel having the aperture and another sub-pixel above the aperture, the overlapping area of ​​the first projection area and the second projection area is not greater than 1 / 2 of the area of ​​the second projection area.

[0012] In some embodiments of the present invention, the same pixel layer includes at least two sub-pixels, one of which has the aperture and the other does not.

[0013] In some embodiments of the present invention, the same pixel layer includes at least two sub-pixels, and both sub-pixels have holes.

[0014] In some embodiments of the present invention, the interior of the aperture is through which interconnecting conductive elements pass, the top end of the interconnecting conductive elements inside the aperture is electrically connected to the bottom end of a sub-pixel above the aperture, and light emitted from the peripheral light-emitting area outside the aperture is emitted at least partially through the periphery of the upper sub-pixel electrically connected to the interconnecting conductive elements inside the aperture.

[0015] In some embodiments of the present invention, a first insulating filling area is provided inside the channel, and the interconnecting conductive element inside the channel passes directly through the first insulating filling area.

[0016] In some embodiments of the present invention, a compound semiconductor region is disposed inside the channel, and the interconnecting conductive element inside the channel passes through the compound semiconductor region.

[0017] In some embodiments of the present invention, at least two sub-pixels located in different pixel layers emit different colors.

[0018] The present invention also discloses a micro-display device, including at least one mother pixel, each mother pixel including multiple sub-pixels, and each mother pixel adopting the mother pixel arrangement structure described in any of the above claims.

[0019] The technical solution of the present invention has the following advantages compared with the prior art:

[0020] The mother pixel arrangement structure and microdisplay device described in this invention can flexibly adjust the light-emitting area and position of the sub-pixels, and also help reduce the occlusion of the light-emitting surface of the lower sub-pixels, ensure the effective light-emitting area of ​​the lower sub-pixels, reduce energy waste, thereby achieving the best light distribution effect, effectively improving the light efficiency and reliability of the display device, and also enabling its light pattern to meet the needs of different application scenarios. Attached Figure Description

[0021] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0022] Figure 1 This is a schematic diagram of the structure of the first micro-display device of the present invention (two-layer structure);

[0023] Figure 2 yes Figure 1 A schematic diagram (top view) showing the arrangement of sub-pixels in the microdisplay device.

[0024] Figure 3 This is a schematic diagram of the structure of the second type of microdisplay device of the present invention (two-layer structure).

[0025] Figure 4 yes Figure 3 A schematic diagram (top view) showing the arrangement of sub-pixels in the microdisplay device.

[0026] Figure 5 This is a schematic diagram of the arrangement of sub-pixels in the third type of micro-display device of the present invention (two-layer structure);

[0027] Figure 6 This is a schematic diagram of the arrangement of sub-pixels in the fourth type of micro-display device of the present invention (two-layer structure);

[0028] Figure 7 This is a schematic diagram of the structure of the fifth type of microdisplay device of the present invention (two-layer structure).

[0029] Figure 8 This is a schematic diagram of the structure of the sixth type of microdisplay device of the present invention (three-layer structure).

[0030] Figure 9 This is a schematic diagram (top view) of the arrangement of sub-pixels in a three-layer microdisplay device.

[0031] Figure 10 This is a schematic diagram of the structure of the seventh micro-display device of the present invention (three-layer structure).

[0032] Figure 11 yes Figure 10 A schematic diagram (top view) showing the arrangement of sub-pixels in the microdisplay device.

[0033] Figure 12 This is a schematic diagram of the arrangement of sub-pixels in the eighth type of micro-display device of the present invention (three-layer structure);

[0034] Figure 13 This is a schematic diagram of the arrangement of sub-pixels in the ninth type of micro-display device of the present invention (three-layer structure);

[0035] Figure 14 This is a schematic diagram of the arrangement of sub-pixels in the tenth type of micro-display device of the present invention (three-layer structure);

[0036] Figure 15 This is a schematic diagram of the arrangement of sub-pixels in the eleventh micro-display device of the present invention (three-layer structure).

[0037] Figure 16 This is a schematic diagram of the structure of the twelfth microdisplay device of the present invention (two-layer structure);

[0038] Figure 17 yes Figure 16 A schematic diagram (top view) showing the arrangement of sub-pixels in the microdisplay device.

[0039] Figure 18 This is a schematic diagram of the structure of the thirteenth micro-display device of the present invention (three-layer structure).

[0040] Figure 19 yes Figure 18 A schematic diagram (top view) showing the arrangement of sub-pixels in the microdisplay device.

[0041] Explanation of reference numerals on the accompanying drawings:

[0042] 10. Drive backplane; 101. Type I electrode contact; 102. Type II electrode contact;

[0043] 20. First pixel layer;

[0044] 30. Second pixel layer;

[0045] 40. Third pixel layer;

[0046] 50. Subpixel; 501. Aperture; 502. Peripheral luminous area;

[0047] 60. Top conductive layer;

[0048] 70. Bottom conductive layer;

[0049] 80. Non-common conductive components;

[0050] 90. Common electrode conductive component;

[0051] 100. First insulation filling area;

[0052] 110. Second insulation filling area;

[0053] 120. Compound semiconductor region; Detailed Implementation

[0054] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments described are not intended to limit the present invention. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present disclosure or its application or use.

[0055] In the description of this invention, it should be understood that the terms "vertical," "upper," "lower," "top," "side," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0056] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0057] Traditional LED devices using multi-layer stacking have complex overall structures, resulting in significant loss of light-emitting area for each pixel. This makes it difficult to adjust the light-emitting area and achieve optimal light distribution. Furthermore, the overall device consumes more power, which is detrimental to the reliability and stability of the LED display device. In view of this, this application provides a micro-display device to improve the above-mentioned problems, thereby better ensuring the photoelectric performance and reliability of the LED display device.

[0058] It should be noted that in this invention, sub-pixels are generally obtained by etching a compound semiconductor layer. A compound semiconductor layer refers to a layer structure with a certain thickness prepared from a compound semiconductor material. Compound semiconductors typically refer to compounds formed from two or more elements, including crystalline inorganic compounds (such as III-V and II-VI compound semiconductors) and oxide semiconductors. The compound semiconductors involved in this application are mainly epitaxial materials for light-emitting diodes, such as InGaN ternary material systems or AlGaInP quaternary material systems, whose emission wavelengths can cover the entire spectrum from ultraviolet, visible, and infrared. Their substrate materials can be GaN, Si, SiC, Sapphire, GaAs, InP, etc.

[0059] Taking the Micro-LED field as an example, some compound semiconductor materials involved in this application are shown in Table 1. In some practical applications, the film layers of compound semiconductors are more complex, or there are cases where materials are used interchangeably. Typical compound semiconductors mainly include P-type semiconductor materials, N-type semiconductor materials, and MQW active quantum wells and other functional layers (barrier layers, confinement layers, waveguide layers, buffer layers, etc.) sandwiched between the two:

[0060] Table 1. Material Table of Film Layers for Compound Semiconductors

[0061]

[0062] The structure of the microdisplay device of this application will be further described below with reference to the following specific embodiments.

[0063] Example 1

[0064] See Figure 1 This embodiment discloses a multi-layer stacked micro-display device, including at least one mother pixel, each mother pixel having multiple (two or more) sub-pixels. The structure of the above micro-display device is described in detail below with a mother pixel having two sub-pixels as an example. The structure shown in the figure only shows the case of one mother pixel. When there are multiple mother pixels, the internal structure of each mother pixel is basically the same.

[0065] In this invention, the micro-display device has a Z-direction, an X-direction, and a Y-direction, which are perpendicular to each other. The Z-direction is the stacking direction of each layer of sub-pixels, that is, the up and down direction, which can also be understood as the direction away from / closer to the driving backplate. Here, "height" or "up and down" or "top and bottom" are all in the Z-direction.

[0066] In this invention, "bottom end of sub-pixel" refers to the end of the sub-pixel that is close to the driving backplate, and "top end of sub-pixel" refers to the end of the sub-pixel that is away from (away from) the driving backplate.

[0067] It should be noted that the cross-sectional views in the XZ plane in the accompanying drawings of this invention can be schematic diagrams after cutting a single cross section or schematic diagrams after cutting multiple cross sections together, in order to show the connection situation of different electrode contacts.

[0068] In this embodiment, the LED display device includes a mother pixel, which includes a driving backplate and multiple sub-pixels 50.

[0069] The driving backplate 10 is a component with a driving circuit. The first type of electrode contact 101 and the second type of electrode contact 102 are the lead-out terminals of the driving circuit, used to electrically connect the driving circuit and the sub-pixel 50. The sub-pixel 50 is a light-emitting element. Through the electrical connection between the driving backplate 10 and the sub-pixel 50, the connection between the sub-pixel and the driving circuit is realized, thereby driving the sub-pixel to emit light, so that each sub-pixel can be driven individually and emit light independently.

[0070] The aforementioned driving backplane 10 includes, but is not limited to, a CMOS (Complementary Metal Oxide Semiconductor) driving backplane.

[0071] The driving backplate 10 may be provided with a first type of electrode contact 101 and a second type of electrode contact 102. The polarities of the first type of electrode contact 101 and the second type of electrode contact 102 are opposite, with one being the anode and the other the cathode. Understandably, in order to prevent short circuits, the first type of electrode contact 101 and the second type of electrode contact 102 need to be insulated from each other. Through the provision of the first type of electrode contact 101 and the second type of electrode contact 102, the driving backplate 10 can be electrically connected to the sub-pixel 50, thereby controlling the light emission of each sub-pixel 50 using the driving backplate 10.

[0072] Understandably, the two ends of sub-pixel 50 along the Z direction are the bottom and the top, respectively; the bottom and top of sub-pixel 50 are the two ends with opposite polarities. Sub-pixel 50 includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer arranged sequentially along the Z direction. The active layer is used to emit light. The top of sub-pixel 50 is the end where the N-type semiconductor layer is located (or the end where the P-type semiconductor layer is located - anode), and the bottom is the end where the P-type semiconductor layer is located (or the end where the N-type semiconductor layer is located - cathode), which need to be connected to electrode contacts of different polarities respectively.

[0073] See Figures 1-2 The microdisplay device in this embodiment includes a driving backplate 10 and two pixel layers. Each pixel layer is provided with sub-pixels 50. Sub-pixels with different light emission colors are located in different pixel layers. All pixel layers are stacked sequentially from bottom to top above the driving backplate 10.

[0074] The mother pixel in the microdisplay device includes a plurality of sub-pixels 50, which adopt the following mother pixel arrangement structure, which includes a driving backplane 10 and a plurality of sub-pixels 50, wherein at least two of the sub-pixels are located in different pixel layers.

[0075] In two sub-pixels 50 located in different pixel layers: one sub-pixel 50 in the lower pixel layer has an aperture 501 inside, and an outer light-emitting area 502 is formed around the aperture 501. The projection area of ​​the outer light-emitting area 502 on the driving backplate 10 is the second projection area. The other sub-pixel 50 in the upper pixel layer is located above the aperture 501, and its projection area on the driving backplate 10 is the first projection area. The first projection area and the second projection area do not overlap at least partially, so that the light emitted by the outer light-emitting area 502 is at least partially emitted through the periphery of the sub-pixel above the aperture 501 without being blocked, increasing the effective light-emitting area of ​​the lower sub-pixel and facilitating the achievement of optimal light distribution. Figure 1 As shown in the figure, the direction of the dashed arrow is the light emission direction of the first layer sub-pixel 50.

[0076] It is understood that in this embodiment, "sub-pixel above the aperture" refers to sub-pixel 50 located above the aperture and at least partially covering the opening above the aperture. The aforementioned "peripheral light-emitting area" is an area that can emit light after being powered on.

[0077] In addition, in this embodiment, the projection area of ​​the sub-pixel on the driving backplate refers to the entire area surrounded by the outer edge of the projection. For example, the projection area of ​​the sub-pixel 50 with a hole on the driving backplate 10 refers to the entire area surrounded by the outer edge of the projection, including the hole area.

[0078] The projection area of ​​the sub-pixel above the aperture on the driving backplate is the first projection area. This "first projection area" is actually the projection area of ​​the sub-pixel on the driving backplate, which refers to the entire area surrounded by the outer edge of its projection.

[0079] The aforementioned structure creates a channel inside the lower sub-pixel, with the upper sub-pixel positioned above the channel of the lower sub-pixel. This allows light emitted from the outer light-emitting area of ​​the lower sub-pixel to be emitted at least partially through the outer periphery of the sub-pixel above the channel, effectively reducing obstruction of the light-emitting area of ​​the lower sub-pixel and increasing its effective light-emitting area, thus facilitating optimal light distribution. It also reduces the problem of light blocking and absorption by the metal bonding layer on the lower sub-pixel when the upper sub-pixel has a metal bonding layer at its bottom, thereby reducing energy waste in the lower sub-pixel and minimizing overheating caused by energy loss converting into heat. This effectively increases the luminous efficiency and reliability of the display device.

[0080] Furthermore, the sub-pixel distribution structure described above allows for more flexible design of the light-emitting area of ​​each sub-pixel layer, compensating for the shortcomings of certain sub-pixels being too bright or too dark. For example, by adjusting the size and position of the internal channels of the sub-pixels, the size and position of the peripheral light-emitting area can be flexibly adjusted, thereby achieving adjustment of the light-emitting area and region. This is suitable for different application requirements and makes it easier to adjust the light-emitting area. The structure also facilitates the control of the position of the upper sub-pixels, allowing the upper sub-pixels to be placed at different positions of the lower sub-pixels, thereby controlling the light pattern of the multi-color stacked device to meet the different needs of XR (extended reality) applications.

[0081] In this embodiment, "upper pixel layer" refers to the pixel layers located above the lowermost pixel layer, while "lower pixel layer" is the pixel layer located below the upper pixel layer. Similarly, "upper subpixel" refers to the subpixels located above the lowermost subpixel, while "lower subpixel" is the subpixel located below the upper subpixel.

[0082] In some implementations, in the sub-pixel 50 having the aperture 501 and another sub-pixel 50 above the aperture 501: the overlapping area of ​​the first projection area and the second projection area is not greater than 1 / 2 of the area of ​​the second projection area.

[0083] Furthermore, in the sub-pixel 50 with aperture 501 and another sub-pixel 50 above aperture 501: the overlapping area of ​​the first projection area and the second projection area is no greater than 1 / 4 of the area of ​​the second projection area. In some embodiments, the overlapping area of ​​the first projection area and the second projection area can be no greater than 1 / 5, 1 / 6, or 1 / 7 of the area of ​​the second projection area, etc., to further reduce the overlapping area of ​​the two, reduce the occlusion of the lower sub-pixel by the upper sub-pixel, and maximize the light-emitting area of ​​the lower sub-pixel to enhance the light effect.

[0084] Furthermore, in the sub-pixel 50 having aperture 501 and another sub-pixel 50 above aperture 501: as Figures 1-2 As shown, the first projection area of ​​the sub-pixel 50 above the aperture 501 is completely located inside the projection area of ​​the aperture 501 on the driving backplate 10. This method ensures that the sub-pixel above the aperture is completely located within the area where the aperture is located, so that the light emitted from the outer light-emitting area of ​​the lower sub-pixel can be completely emitted from the outer periphery of the upper sub-pixel without being blocked, thus maximizing the light-emitting area of ​​the lower sub-pixel and improving the light efficiency.

[0085] In some implementations, the sub-pixel with aperture 501 and the sub-pixel above aperture 201 are coaxially arranged.

[0086] For example, see Figures 1-2 ,in, Figure 1 It can be Figure 2 A cross-sectional view of the structure along point AA. The structure is a two-layer structure. The first pixel layer 20 has a sub-pixel 50 with a channel 501. The second pixel layer 30 has another sub-pixel 50, which is located above the channel and is coaxially arranged with the sub-pixel with the channel below (the axes coincide). Figure 2 In the first pixel layer 20, sub-pixel 50 is denoted as i1, and the first type of electrode contact 101 connected to it is denoted as c1. In the second pixel layer 30, sub-pixel 50 is denoted as i2, and the first type of electrode contact 101 connected to it is denoted as c2.

[0087] In other embodiments, the sub-pixel having the aperture 501 is arranged off-axis (the axes do not coincide) with at least one sub-pixel located above the aperture 501.

[0088] For example, see Figures 3-4 ,in, Figure 3 It can be Figure 4 A cross-sectional view of the structure along BB. The structure is a two-layer structure. The first pixel layer 20 has a sub-pixel 50 with a channel 501. The second pixel layer 30 has another sub-pixel 50, which is located above the channel and is arranged on opposite axes (the axes do not coincide) with the sub-pixel with the channel below. Figure 4 In the first pixel layer 20, sub-pixel 50 is denoted as i1, and the first type of electrode contact 101 connected to it is denoted as c1. In the second pixel layer 30, sub-pixel 50 is denoted as i2, and the first type of electrode contact 101 connected to it is denoted as c2.

[0089] In some implementations, the same pixel layer includes at least two sub-pixels 50, one of which has an aperture and the other does not; for example, such as Figures 5-6 As shown, the first pixel layer 20 has two sub-pixels 50, one with an aperture and the other without an aperture. The second pixel layer 30 has one sub-pixel 50, which is located above the aperture 501. This arrangement ensures that at least two sub-pixels are arranged in the same pixel layer within the parent pixel.

[0090] Alternatively, in other ways, the same pixel layer includes at least two sub-pixels 50, both of which have apertures 501.

[0091] The shape of each sub-pixel is not limited; it can be a circle, ellipse, polygon (triangle, trapezoid, rectangle, etc.) or other shapes.

[0092] In some implementations, such as Figure 1As shown, the interior of the aperture 501 is used for interconnecting conductive components to pass through. The top of the interconnecting conductive component inside the aperture 501 is electrically connected to the bottom of a sub-pixel 50 above the aperture 501. At least part of the light emitted from the peripheral light-emitting area 502 outside the aperture 501 is emitted through the periphery of the upper sub-pixel 50 electrically connected to the interconnecting conductive component inside the aperture 501. This can make full use of the space inside the aperture, facilitate the electrode connection of the sub-pixel, effectively reduce the obstruction of the light-emitting surface of the lower sub-pixel, increase the effective light-emitting area of ​​the lower sub-pixel, and help achieve the best light distribution effect.

[0093] In some implementations, such as Figure 1 As shown, a first insulating filling area 100 is provided inside the channel 501, and the interconnecting conductive components inside the channel 501 directly pass through the first insulating filling area 100 and are electrically connected to the first type of electrode contact 101.

[0094] The above structure can be fabricated using the following method: filling the cavity 501 with insulating material to form a first insulating filling region 100, so that the interconnecting conductive element directly passes through the first insulating filling region 100 and is electrically connected to the first type of electrode contact 101.

[0095] For example, the filling material used in the first insulating filling region 100 may be one or more of silicon oxide, silicon nitride, silicon carbide (SiC), silicon carbon nitride (SiCN), silicon phosphosilicate glass (PSG), borosilicate glass (BPSG), or polyimide.

[0096] In other implementations, such as Figure 7 As shown, a compound semiconductor region 120 is disposed inside the channel 501. The interconnecting conductive components inside the channel 501 pass through the compound semiconductor region 120 and are electrically connected to the first type of electrode contact 101. This method can retain more compound semiconductor material, which has good thermal conductivity, thus improving the overall heat dissipation effect of the device.

[0097] Understandably, the compound semiconductor region 120 penetrated by the interconnecting conductive components does not emit light when energized.

[0098] Furthermore, the hole wall of the channel 501 and the internal compound semiconductor region 120 are insulated from each other. For example, insulating material can be filled between the hole wall of the channel 501 and the internal compound semiconductor region 120.

[0099] The above structure can be fabricated using the following method: a portion of the compound semiconductor material is retained inside the channel 501 to form a compound semiconductor region 120, and an interconnecting conductive element is electrically connected to the first type of electrode contact 101 through the compound semiconductor region 120.

[0100] In some embodiments, a second insulating filling area 110 is provided around the sub-pixel 50 with the aperture 501 to achieve insulating isolation between sub-pixels 50 in the same layer.

[0101] In some implementations, at least two sub-pixels located in different pixel layers emit different colors. For example, in a two-layer structure with two pixel layers, the sub-pixels in each pixel layer may emit the same color, while the sub-pixels in different pixel layers emit different colors. Alternatively, one pixel layer may have two sub-pixels with different emission colors, while another pixel layer may have a sub-pixel whose emission color is different from that of at least one sub-pixel in the first layer.

[0102] For example, in the two-layer structure, the sub-pixels 50 in the first pixel layer 20 and the second pixel layer 30 emit different colors to achieve a dual-color configuration. For instance, the emission colors of each sub-pixel 50 from bottom to top are red and green, or they could be red and blue, or green and blue, etc.

[0103] This embodiment also discloses a micro-display device, including at least one mother pixel, each mother pixel including multiple sub-pixels 50, and the multiple sub-pixels 50 in each mother pixel are arranged in the form of the above-described mother pixel arrangement structure.

[0104] In some implementations, the bottom of each sub-pixel 50 in the mother pixel is electrically connected to the corresponding first type electrode contact 101 through the bottom conductive layer 70, and the top of each sub-pixel 50 is electrically connected to the corresponding second type electrode contact 102 through the top conductive layer 60. The first type electrode contact 101 and the second type electrode contact 102 have opposite polarities, one being an anode and the other a cathode.

[0105] The first type of electrode contact 101 and the second type of electrode contact 102 are provided on the drive back plate 10 to serve as electrode terminals of the drive circuit inside the drive back plate.

[0106] like Figure 1 As shown, the bottom of each sub-pixel 50 in the mother pixel is electrically connected to the corresponding first type of electrode contact 101 through the bottom conductive layer 70. The tops of multiple sub-pixels 50 are electrically interconnected through the top conductive layer 60 and are jointly electrically connected to the second type of electrode contact 102 to form a top common electrode structure. That is, the top conductive layers 60 of each sub-pixel in the top common electrode structure are electrically connected together and conduct electricity to each other.

[0107] In this embodiment, the mother pixel adopts the above-described top common electrode structure when making electrical connections.

[0108] Furthermore, in the two sub-pixels 50 located in different pixel layers, one sub-pixel 50 has a channel 501 inside, and the channel 501 allows interconnecting conductive elements to pass through. The top of the interconnecting conductive elements inside the channel 501 is electrically connected to the bottom conductive layer 70 of the other sub-pixel 50 in the upper pixel layer.

[0109] In the aforementioned top common-pole structure, such as Figure 1 As shown, the aforementioned interconnecting conductive component is a non-common conductive component 80, whose top end is electrically connected to the bottom conductive layer 70 of a sub-pixel 50 in the upper pixel layer, and whose bottom end is electrically connected to the corresponding first-type electrode contact 101. It can be understood that a "non-common conductive component" refers to a conductive component that provides non-common terminal electrical connection for sub-pixels.

[0110] The material of the aforementioned non-common conductive component 80 can be metals such as aluminum (Al), copper (Cu), and tungsten (W) and their corresponding adhesive or barrier layers, such as titanium (Ti), titanium nitride (TiN), tantalum nitride / copper (Ti / Cu), tantalum nitride / copper (TaN / Cu), etc.

[0111] Example 2

[0112] See Figures 8-15 The main difference between this embodiment and embodiment one is that the micro-display device in this embodiment has three pixel layers. All pixel layers are stacked sequentially from bottom to top above the driving backplate 10. At this time, the structure is a three-layer structure. The mother pixel has three sub-pixels 50. The three sub-pixels 50 are located in different pixel layers. The three pixel layers from bottom to top are the first pixel layer 20, the second pixel layer 30 and the third pixel layer 40.

[0113] The bottom of each of the three sub-pixels 50 is electrically connected to the corresponding first type electrode contact 101 through the bottom conductive layer 70, and the top of the three sub-pixels is electrically connected to the second type electrode contact 102 through the top conductive layer 60 to form a top common electrode structure.

[0114] The sub-pixel 50 with aperture 501 and the sub-pixel 50 located above aperture 501 can be arranged in the following manner:

[0115] The first type: The sub-pixels with holes and the sub-pixels above the holes are all set coaxially.

[0116] For example, the mother pixel has three sub-pixels 50, see [reference] Figures 8-9The bottommost sub-pixel has a channel. This sub-pixel is coaxially arranged with the sub-pixels of the second layer and also with the sub-pixels of the third layer, that is, the three sub-pixels 50 are coaxially arranged. Among them, the sub-pixel 50 located in the first pixel layer 20 is denoted as i1, and the first type electrode contact 101 connected to it is denoted as c1. The sub-pixel 50 located in the second pixel layer 30 is denoted as i2, and the first type electrode contact 101 connected to it is denoted as c2. The sub-pixel 50 located in the third pixel layer 40 is denoted as i3, and the first type electrode contact 101 connected to it is denoted as c3.

[0117] Furthermore, at least two sub-pixels located in different pixel layers are situated above the same aperture. For example, the parent pixel has three sub-pixels 50, see [reference]. Figures 8-9 The bottommost sub-pixel has a hole 501, and the second and third layer sub-pixels 50 are all located above their holes 501.

[0118] The second type: The sub-pixel with the aperture is set off-axis from at least one sub-pixel above the aperture.

[0119] For example, see Figures 10-12 The mother pixel has three sub-pixels 50, with the bottom sub-pixel having a hole. The sub-pixels 50 in the second pixel layer 30 and the third pixel layer 40 are arranged off-axis from the sub-pixels 50 in the first pixel layer 20. Figure 10 It can be Figure 11 The diagram shows a cross-sectional view of the structure at FF. It should be noted that in the first pixel layer 20, sub-pixel 50 is denoted as i1, and the connected first-type electrode contact 101 is denoted as c1; in the second pixel layer 30, sub-pixel 50 is denoted as i2, and the connected first-type electrode contact 101 is denoted as c2; in the third pixel layer 40, sub-pixel 50 is denoted as i3, and the connected first-type electrode contact 101 is denoted as c3. The shape of sub-pixel 50 is not limited; for example… Figure 11 and Figure 12 The shapes of the first layer sub-pixels 50 are different; one is circular and the other is square.

[0120] In some schemes, a single sub-pixel 50 is provided with multiple apertures 501, and the sub-pixels 50 above the apertures 501 correspond one-to-one with the apertures 501. For example, see Figures 11-13 The first layer of sub-pixels 50 has two apertures 501, and the second layer of sub-pixels 50 and the third layer of sub-pixels 50 are each located above their respective apertures 501. The sub-pixels above can be symmetrically or asymmetrically distributed.

[0121] In some schemes, the projections of the individual sub-pixels 50 above the aperture 501 onto the driving backplate 10 do not overlap at all.

[0122] Furthermore, the sub-pixels 50 above the aperture 501 are circumferentially distributed around the axis of the sub-pixel 50 having the aperture; for example, they can be evenly distributed circumferentially. See, for example, [link to relevant documentation]. Figure 11 The first layer of sub-pixels 50 has two apertures 501. The second layer of sub-pixels 50 and the third layer of sub-pixels 50 are each located above their respective apertures 501. The two sub-pixels 50 of the second and third layers are circumferentially distributed around the axis of the sub-pixel 50 with apertures below.

[0123] In this context, the axis of sub-pixel 50 refers to its geometric center line.

[0124] In other schemes, the projections of the sub-pixels 50 above the aperture 501 onto the driving backplate 10 partially overlap. For example, the sub-pixels 50 of the first layer have two apertures 501, and the sub-pixels 50 of the second layer and the third layer are each located above their respective apertures 501. The projections of the two sub-pixels 50 of the second and third layers onto the driving backplate 10 partially overlap, while the other parts do not overlap.

[0125] In some implementations, the same pixel layer includes at least two sub-pixels 50, one of which has an aperture 501 and the other does not have an aperture 501.

[0126] Alternatively, the same pixel layer may include at least two sub-pixels 50, both of which have apertures 501. For example, see [reference needed]. Figure 14 The second pixel layer 30 has two sub-pixels 50, and the first pixel layer 20 and the third pixel layer 40 can each have one sub-pixel 50. The sub-pixel 50 of the first pixel layer 20 has three apertures 501, and the three upper sub-pixels 50 are each located above their respective apertures 501. Alternatively, see [link to relevant documentation]. Figure 15 The first pixel layer 20 has two sub-pixels 50, and the second pixel layer 30 and the third pixel layer 40 can each have one sub-pixel 50. The sub-pixel 50 of the first pixel layer 20 has two apertures 501, and the two upper sub-pixels 50 are each located above the corresponding apertures 501.

[0127] This embodiment also discloses a microdisplay device, including at least one mother pixel, each mother pixel including multiple sub-pixels 50. The bottom end of each sub-pixel 50 in the mother pixel is electrically connected to a corresponding first type electrode contact 101 through a bottom conductive layer 70, and the top end of each sub-pixel 50 is electrically connected to a corresponding second type electrode contact 102 through a top conductive layer 60. The first type electrode contact 101 and the second type electrode contact 102 have opposite polarities, one being an anode and the other a cathode.

[0128] The first type of electrode contact 101 and the second type of electrode contact 102 are provided on the drive back plate 10 to serve as electrode terminals of the drive circuit inside the drive back plate 10.

[0129] like Figure 1 As shown, the mother pixel has three sub-pixels 50, which are located in different pixel layers. The bottom of each sub-pixel 50 is electrically connected to the corresponding first type electrode contact 101 through the bottom conductive layer 70. The tops of the three sub-pixels 50 are electrically interconnected through the top conductive layer 60 and are electrically connected to the second type electrode contact 102 to form a top common electrode structure. That is, the top conductive layers of each sub-pixel in the top common electrode structure are electrically connected together and conduct electricity to each other.

[0130] In this embodiment, the mother pixel adopts the above-described top common electrode structure when making electrical connections.

[0131] Furthermore, in the two sub-pixels 50 located in different pixel layers, one sub-pixel 50 has a channel 501 inside, and the channel 501 allows interconnecting conductive elements to pass through. The top of the interconnecting conductive elements inside the channel 501 is electrically connected to the bottom conductive layer 70 of the other sub-pixel 50 in the upper pixel layer.

[0132] In the aforementioned top common-polarity structure, the interconnecting conductive element is a non-common-polarity conductive element 80, whose top end is electrically connected to the bottom conductive layer 70 of a sub-pixel 50 in the upper pixel layer, and whose bottom end is electrically connected to the corresponding first-type electrode contact 101. It can be understood that a "non-common-polarity conductive element" refers to a conductive element that provides non-common-polarity electrical connection for the sub-pixel.

[0133] In some implementations, at least two subpixels located in different pixel layers emit different colors.

[0134] For example, in a three-layer structure, the sub-pixels 50 in the first pixel layer 20, the second pixel layer 30, and the third pixel layer 40 emit different colors to achieve a three-color configuration. For example, the emission colors of each sub-pixel from bottom to top are red, green, and blue, respectively.

[0135] Example 3

[0136] See Figures 16-19 This embodiment also discloses a microdisplay device, which differs from the first embodiment in that the multiple sub-pixels 50 in the mother pixel adopt a bottom common electrode structure when connecting electrodes.

[0137] In this embodiment, the bottom of each sub-pixel 50 in the mother pixel is electrically connected to the corresponding first type electrode contact 101 through the bottom conductive layer 70, and the top of each sub-pixel 50 is electrically connected to the corresponding second type electrode contact 102 through the top conductive layer 60. The polarities of the first type electrode contact 101 and the second type electrode contact 102 are opposite.

[0138] The first type of electrode contact 101 and the second type of electrode contact 102 are provided on the drive back plate 10 to serve as electrode terminals of the drive circuit inside the drive back plate.

[0139] In this structure, the top of each sub-pixel 50 in the mother pixel is electrically connected to the corresponding second type electrode contact 102 through the top conductive layer 60, and the bottom ends of multiple sub-pixels 50 are interconnected through the bottom conductive layer 70 and electrically connected to the first type electrode contact 101 to form a bottom common electrode structure; that is, the bottom conductive layers 70 of each sub-pixel in the bottom common electrode structure are electrically connected together and conduct electricity to each other.

[0140] In this embodiment, the mother pixel adopts the aforementioned bottom common electrode structure when making electrical connections.

[0141] For example, such as Figure 16 As shown, the microdisplay device has two pixel layers, which are, from bottom to top, a first pixel layer 20 and a second pixel layer 30. The top of each of the two sub-pixels 50 is electrically connected to the corresponding second type electrode contact 102 through a top conductive layer 60, and the bottom ends of the two sub-pixels 50 are interconnected through a bottom conductive layer 70 to form a bottom common electrode structure.

[0142] Or, such as Figure 18 As shown, the microdisplay device has three pixel layers, which are, from bottom to top, a first pixel layer 20, a second pixel layer 30, and a third pixel layer 40. The top of each of the three sub-pixels 50 is electrically connected to a corresponding second-type electrode contact 102 through a top conductive layer 60, and the bottom ends of the three sub-pixels 50 are interconnected through a bottom conductive layer 70 to form a bottom common electrode structure.

[0143] Furthermore, in the two sub-pixels 50 located in different pixel layers, one sub-pixel 50 has a channel 501 inside, and the channel 501 allows interconnecting conductive elements to pass through. The top of the interconnecting conductive elements inside the channel 501 is electrically connected to the bottom conductive layer 70 of the other sub-pixel 50 in the upper pixel layer.

[0144] In the aforementioned bottom common electrode structure, the interconnecting conductive component is a common electrode conductive component 90. Its top end is electrically connected to the bottom conductive layer 70 of a sub-pixel 50 in the upper pixel layer, and its bottom end is electrically connected to the corresponding first-type electrode contact 101. It can be understood that a "common electrode conductive component" refers to a conductive component that provides common-end electrical connection for the sub-pixel. The material of the aforementioned common electrode conductive component 90 can be metals such as aluminum (Al), copper (Cu), and tungsten (W), and their corresponding adhesive or barrier layers, such as titanium (Ti), titanium nitride (TiN), tantalum nitride / copper (Ti / Cu), tantalum nitride / copper (TaN / Cu), etc.

[0145] In some implementations, the top conductive layer 60 of each sub-pixel 50 is electrically connected to the corresponding second type electrode contact 102 via a non-common conductive element 80.

[0146] Furthermore, the second type of electrode contact 102 is located around any sub-pixel 50 having the channel 501 to better ensure the reliability of current transmission. Specifically, each second type of electrode contact 102 can be arranged around the periphery of the sub-pixel 50 with the largest width (X direction).

[0147] In some implementations, the microdisplay device may have two pixel layers disposed on the driving backplane 10 to form a two-layer structure.

[0148] For example, see Figures 16-17 The sub-pixel 50 with the aperture 501 and any upper sub-pixel 50 connected to the common conductive element 90 passing through the aperture 501 are all coaxially arranged (the axes coincide). Figure 16 It can be Figure 17 A rotated sectional view of the middle structure along G1-G1; it should be noted that... Figure 17 In the first pixel layer 20, sub-pixel 50 is denoted as i1, and the second type of electrode contact 102 connected to it is denoted as k1. In the second pixel layer 30, sub-pixel 50 is denoted as i2, and the second type of electrode contact 102 connected to it is denoted as k2.

[0149] The mother pixels in the two-layer structure described above can adopt various arrangement forms of the sub-pixels in the mother pixel arrangement structure of the two-layer structure in Embodiment 1, such as coaxial, off-axis, etc., which will not be elaborated here.

[0150] In other embodiments, the microdisplay device may form a three-layer structure by providing three pixel layers on the driving backplane 10.

[0151] For example, the mother pixel has three sub-pixels 50, see [reference] Figures 18-19 ,in, Figure 18 The middle structure can be Figure 19A rotated cross-sectional view at point G2-G2; the bottommost sub-pixel 50 has a channel 501, and this sub-pixel 50 is coaxially arranged with the second-layer sub-pixel 50 and also coaxially arranged with the third-layer sub-pixel 50, that is, the three sub-pixels 50 are coaxially arranged; it should be noted that Figure 19 In the first pixel layer 20, sub-pixel 50 is denoted as i1, and the connected second-type electrode contact 102 is denoted as k1. In the second pixel layer 30, sub-pixel 50 is denoted as i2, and the connected second-type electrode contact 102 is denoted as k2. In the third pixel layer 40, sub-pixel 50 is denoted as i3, and the connected second-type electrode contact 102 is denoted as k3. The shape of sub-pixel 50 is not limited.

[0152] The mother pixels in the above three-layer structure can all adopt various arrangement forms of the sub-pixels in the mother pixel arrangement structure of the three-layer structure in Embodiment 2, such as coaxial, off-axis, etc., which will not be elaborated here.

[0153] All the above-mentioned optional technical solutions can be combined in any way to form optional embodiments of the present invention. That is, any number of embodiments can be combined to meet the needs of different application scenarios. All of these are within the protection scope of this application and will not be described in detail here.

[0154] It should be noted that the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A mother pixel arrangement structure, characterized in that: include, Drive backplane; Multiple sub-pixels, at least two of which are located in different pixel layers; all of the pixel layers are stacked sequentially from bottom to top above the driving backplate; In two sub-pixels located in different pixel layers, a channel is formed inside one of the sub-pixels in the lower pixel layer, and a peripheral light-emitting area is formed around the channel. The projection area of ​​the peripheral light-emitting area on the driving backplate is a second projection area. The other sub-pixel in the upper pixel layer is located above the channel, and its projection area on the driving backplate is a first projection area. The first projection area and the second projection area partially overlap, so that the light emitted by the peripheral light-emitting area is at least partially emitted through the periphery of the sub-pixel above the channel. The sub-pixel with the aperture and the sub-pixel above the aperture are coaxially arranged.

2. The mother pixel arrangement structure according to claim 1, characterized in that: At least two sub-pixels located in different pixel layers are both located above the same aperture.

3. The mother pixel arrangement structure according to claim 1, characterized in that: In the sub-pixel with the aperture and the other sub-pixel above the aperture, the overlapping area of ​​the first projection region and the second projection region is no greater than 1 / 2 of the area of ​​the second projection region.

4. The mother pixel arrangement structure according to claim 1, characterized in that: The same pixel layer includes at least two sub-pixels, one of which has the aperture and the other does not.

5. The mother pixel arrangement structure according to claim 1, characterized in that: Each pixel layer includes at least two sub-pixels, and both sub-pixels have holes.

6. The mother pixel arrangement structure according to claim 1, characterized in that: The channel allows interconnecting conductive elements to pass through, and the top of the interconnecting conductive elements inside the channel is electrically connected to the bottom of a sub-pixel above the channel. Light emitted from the peripheral light-emitting area outside the channel is emitted at least partially through the periphery of the upper sub-pixel electrically connected to the interconnecting conductive elements inside the channel.

7. The mother pixel arrangement structure according to claim 6, characterized in that: The channel has a first insulating filling area inside, and the interconnecting conductive element inside the channel passes directly through the first insulating filling area.

8. The mother pixel arrangement structure according to claim 6, characterized in that: A compound semiconductor region is disposed inside the channel, and the interconnecting conductive element inside the channel passes through the compound semiconductor region.

9. The mother pixel arrangement structure according to claim 1, characterized in that: At least two of the sub-pixels located in different pixel layers emit different colors.

10. A microdisplay device, characterized in that: It includes at least one mother pixel, each mother pixel includes multiple sub-pixels, and each mother pixel adopts the mother pixel arrangement structure according to any one of claims 1-9.

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