Display device and light emitting device

Abstract

The display device according to an embodiment of the present disclosure may include: a substrate; an insulating layer disposed on the substrate and having a groove; a first lower electrode disposed on the insulating layer; a first light-emitting device disposed on the insulating layer and including a first electrode and a second electrode; a trapping material disposed inside the groove; a second light-emitting device disposed on the trapping material and including a first electrode and a second electrode; and a second lower electrode disposed on the first lower electrode and connected to the first electrode of the second light-emitting device.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0202067, filed on December 31, 2024, which is incorporated herein by reference for all purposes, as if fully set forth herein. Technical Field

[0003] The embodiments disclosed herein relate to display devices and light-emitting devices. Background Technology

[0004] Display devices are used in a wide variety of electronic devices, such as TVs, mobile phones, laptops, and tablets. Display devices include self-emissive organic light-emitting displays (OLEDs) and liquid crystal displays (LCDs) that require a separate light source.

[0005] Recently, display devices including light-emitting diodes (LEDs) have attracted attention as the next generation of display devices. Because the light-emitting device or LED is made of inorganic materials rather than organic materials, display devices including LEDs can have faster turn-on speeds, superior luminous efficiency, and can display high-brightness images compared to liquid crystal displays or organic light-emitting displays.

[0006] However, in the case of display devices with light-emitting devices, there may be cases where defects are found in some of the light-emitting devices that are transferred to the display panel. Summary of the Invention

[0007] The embodiments of this disclosure can provide a display device having a structure that allows for easy repair of sub-pixels including the defective light-emitting device in the event of a defect in the light-emitting device disposed on the display panel.

[0008] The embodiments of this disclosure can provide a display device having a structure that can repair both dark spot defects and bright spot defects in the light-emitting device when defects occur in the light-emitting device disposed on the display panel.

[0009] The embodiments disclosed herein can provide a light-emitting device with an electrode structure that facilitates repair processes.

[0010] The embodiments disclosed herein can provide a light-emitting device having a structure capable of contacting the sides of electrodes on a display panel.

[0011] The purposes of the embodiments disclosed herein are not limited to those described herein, and other purposes will be clearly understood by those skilled in the art from the following description.

[0012] The display device according to an embodiment of the present disclosure may include: a substrate; an insulating layer disposed on the substrate and having a groove; a first lower electrode disposed on the insulating layer; a first light-emitting device disposed on the insulating layer and including a first electrode and a second electrode; a trapping material disposed inside the groove; a second light-emitting device disposed on the trapping material and including a first electrode and a second electrode; and a second lower electrode disposed on the first lower electrode and connected to the first electrode of the second light-emitting device.

[0013] The display device according to an embodiment of the present disclosure may include: a substrate; an insulating layer disposed on the substrate and having a groove; a first lower electrode disposed on the insulating layer; a first light-emitting device disposed on the insulating layer and including a first electrode and a second electrode; at least one organic layer surrounding the first light-emitting device and filling the interior of the groove; and an upper electrode disposed on at least one organic layer.

[0014] The light-emitting device according to embodiments of the present disclosure may include: a first electrode; a first semiconductor layer on the first electrode; a light-emitting layer on the first semiconductor layer; a second semiconductor layer on the light-emitting layer; and a second electrode on the second semiconductor layer. The first electrode may include: a lower electrode having a first area; and an upper electrode disposed on the lower electrode and having a second area smaller than the first area.

[0015] According to embodiments of the present disclosure, a display device can be provided having a structure that allows for easy repair of sub-pixels including the defective light-emitting device in the event of a defect in the light-emitting device disposed on the display panel.

[0016] According to embodiments of this disclosure, a display device with the following structure can be provided: in the event of a defect in the light-emitting device disposed on the display panel, the structure is capable of repairing both dark spot defects and bright spot defects of the light-emitting device.

[0017] According to embodiments of this disclosure, a light-emitting device with an electrode structure that facilitates repair processes can be provided.

[0018] According to embodiments of this disclosure, a light-emitting device having a structure capable of contacting the side of an electrode on a display panel can be provided.

[0019] According to the embodiments of this disclosure, process optimization can be achieved by effectively repairing subpixels with defective light-emitting devices without significantly altering the panel structure.

[0020] According to the embodiments of this disclosure, since there is no need to use redundant structures to additionally transfer expensive light-emitting devices in preparation for light-emitting device failure, the size and weight of the display panel can be reduced, thereby simplifying the design of the display panel and significantly reducing the product price of the display panel.

[0021] The effects of the embodiments disclosed herein are not limited to those described herein, and those skilled in the art will clearly understand other effects as described in the claims. Attached Figure Description

[0022] This disclosure will be more fully understood in light of the detailed description and accompanying drawings provided below, which are provided for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0023] Figure 1 This is a system configuration diagram of a display device according to an embodiment of the present disclosure.

[0024] Figure 2 It is the equivalent circuit of a sub-pixel in a display device according to an embodiment of the present disclosure.

[0025] Figure 3 , Figure 4A and Figure 4B A light-emitting device of a display apparatus according to an embodiment of the present disclosure is shown.

[0026] Figure 5A , Figure 5B , Figure 6 and Figure 7 This is a cross-sectional view of a display panel according to an embodiment of the present disclosure.

[0027] Figures 8 to 16 The manufacturing process of a display panel according to an embodiment of the present disclosure is shown. Detailed Implementation

[0028] In the following description of examples or embodiments of the invention, reference will be made to the accompanying drawings, which illustrate specific examples or embodiments that may be implemented by way of illustration. The same reference numerals and symbols in the drawings may be used to indicate the same or similar components, even when these components are shown in different drawings. Furthermore, in the following description of examples or embodiments of the invention, detailed descriptions of well-known functions and components incorporated herein may render the subject matter of some embodiments of the invention quite unclear. Terms such as “comprising,” “having,” “including,” “constituting,” “made of,” and “formed by” as used herein are generally intended to allow for the addition of additional components, unless said terms are used in conjunction with the term “only.” As used herein, the singular form is intended to include the plural form unless the context clearly indicates otherwise.

[0029] The elements of the present invention may be described herein using terms such as “first,” “second,” “A,” “B,” “(A),” or “(B).” Each of these terms is not used to define the nature, order, sequence, or number of the elements, but is only used to distinguish the corresponding element from other elements.

[0030] When referring to a first element being "connected or linked to" a second element, or "in contact with or overlapping" a second element, it should be interpreted as the first element not only being "directly connected or linked to" or "in direct contact with or overlapping" a second element, but also having a third element "inserted" between the first and second elements, or the first and second elements being "connected or linked to" each other, or "in contact with or overlapping" each other, via a fourth element. Here, the second element may include at least one of two or more elements that are "connected or linked" or "in contact with or overlapping" each other.

[0031] When time-related terms such as “after,” “follow,” “next,” “before,” etc., are used to describe the process or operation of an element or configuration, or the flow or steps in an operation, treatment, or manufacturing method, these terms may be used to describe discontinuous or non-sequential processes or operations unless used with the terms “directly” or “immediately.”

[0032] Additionally, when referring to any size, relative dimensions, etc., it should be considered that, even without a specific description, the numerical values ​​or corresponding information of a component or feature (e.g., level, range, etc.) include tolerances or error ranges that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.). Furthermore, the term "may" fully encompasses all the meanings of the term "able to".

[0033] In the following sections, various embodiments of this disclosure will be described in detail with reference to the accompanying drawings.

[0034] Figure 1 This is a system configuration diagram of 100 according to the implementation scheme of this disclosure.

[0035] Reference Figure 1 The display device 100 according to embodiments of the present disclosure may include a display panel 110 and a display driving circuit as components for displaying images. The display driving circuit may be a circuit for driving the display panel 110. The display driving circuit may include a data driving circuit 120, a gate driving circuit 130, and a controller 140, but embodiments of the present disclosure are not limited thereto.

[0036] The display panel 110 may include a substrate 111 and a plurality of sub-pixels SP arranged on the substrate 111.

[0037] The substrate 111 may include a display area DA and a non-display area NDA. The display area DA is the area where an image can be displayed, and may also be referred to as an active area. Multiple sub-pixels SP for displaying images may be arranged in the display area DA. The non-display area NDA is the area where no image is displayed, and may be the outer area of ​​the display area DA. The non-display area NDA may also be referred to as a border (or border area). The non-display area NDA may include pad areas.

[0038] According to the embodiments of this disclosure, the display device 100 may be a self-emissive display device in which the display panel 110 emits its own light.

[0039] Each of the plurality of sub-pixels SP arranged on the display panel 110 of the display device 100 according to an embodiment of the present disclosure may include a light-emitting device that emits light by itself. Each of the plurality of sub-pixels SP arranged on the display panel 110 of the display device 100 according to an embodiment of the present disclosure may include at least one transistor for driving the light-emitting device, and may also include at least one capacitor. However, the present disclosure is not limited thereto.

[0040] Various types of signal lines for driving multiple sub-pixels SP can be arranged on the substrate 111 of the display panel 110. For example, the various types of signal lines may include multiple data lines DL for transmitting data signals (also known as data voltages or image signals) and multiple gate lines GL for transmitting gate signals (also known as scan signals).

[0041] For example, multiple data lines DL and multiple gate lines GL may intersect each other. Each of the multiple data lines DL may be arranged to extend in a column direction, and each of the multiple gate lines GL may be arranged to extend in a row direction. According to embodiments of this disclosure, the column direction and the row direction may be opposite directions. For example, depending on the viewing angle, the column direction may be the row direction, and depending on the viewing angle, the row direction may be the column direction. Hereinafter, for ease of explanation, examples of each of the multiple data lines DL being arranged in a column direction and each of the multiple gate lines GL being arranged in a row direction will be described, but embodiments of this disclosure are not limited thereto. In embodiments of this disclosure, the angle formed by the row direction and the column direction may be orthogonal (or 90 degrees), or may be an angle different from the orthogonal angle. In addition, in embodiments of this disclosure, the row direction may be referred to as a first direction, and the column direction may be referred to as a second direction.

[0042] The data driving circuit 120 can be a circuit used to drive multiple data lines DL, and can output data signals corresponding to the image signals to the multiple data lines DL.

[0043] The data drive circuit 120 can receive image data DATA in digital form from the controller 140, convert the received image data DATA into an analog data signal (or also known as an image voltage), and output the converted data signal to multiple data lines DL.

[0044] For example, the data driving circuit 120 can be connected to the display panel 110 via tape automated bonding (TAB), connected to the bonding pads of the display panel 110 via chip-on-glass (COG) or chip-on-panel (COP), or implemented and connected to the display panel 110 via chip-on-film (COF), but is not limited thereto.

[0045] The data driving circuit 120 may be connected to one side of the display panel 110 (e.g., the top or bottom side). In another example, depending on the driving method or panel design method, the data driving circuit 120 may be connected to both sides of the display panel 110 (e.g., the top and bottom sides) or to two or more of the four sides of the display panel 110.

[0046] The data driving circuit 120 can be connected to the outside of the display area DA of the display panel 110, but as another example, it can be set in the display area DA of the display panel 110.

[0047] The gate drive circuit 130 is a circuit used to drive multiple gate lines GL and can output gate signals to multiple gate lines GL.

[0048] The gate drive circuit 130 can receive a first gate voltage corresponding to an on-state voltage (also called an on-level voltage) and a second gate voltage corresponding to an off-state voltage (also called an off-level voltage), as well as various gate drive control signals GCS, generate a gate signal including portions having the first gate voltage and portions having the second gate voltage, and supply the generated gate signal to multiple gate lines GL. As an example, the on-state voltage can be a high-level voltage, and the off-state voltage can be a low-level voltage. As another example, the on-state voltage can be a low-level voltage, and the off-state voltage can be a high-level voltage.

[0049] In the display device 100 according to an embodiment of the present disclosure, the gate driving circuit 130 may be built into the display panel 110 as a gate-in-panel (GIP) type, but the embodiments of the present disclosure are not limited thereto. If the gate driving circuit 130 is an in-panel type, the gate driving circuit 130 may be formed on the substrate 111 of the display panel 110 during the manufacturing process of the display panel 110. If the gate driving circuit 130 is an in-panel type, the gate driving circuit 130 may be referred to as a gate-in-panel circuit (GIPC).

[0050] For example, the gate drive circuit 130 can be disposed in the non-display area NDA of the display panel 110.

[0051] In another example, the gate driving circuit 130 may be disposed in the display area DA of the display panel 110. For example, the gate driving circuit 130 may be disposed in a first portion of the display area DA (e.g., the left or right portion of the display area DA). As another example, the gate driving circuit 130 may be disposed in a first portion of the display area DA (e.g., the left or right portion of the display area DA) and a second portion of the display area DA (e.g., the right or left portion of the display area DA). As yet another example, the gate driving circuit 130 may be disposed over the entire area of ​​the display area DA.

[0052] The gate drive circuit 130 of the in-board gate type may include a plurality of transistors. Each of the plurality of transistors included in the gate drive circuit 130 may include an active layer comprising a first semiconductor material, and each of the plurality of transistors included in the sub-pixel SP may include an active layer comprising a second semiconductor material. As an example, the first semiconductor material and the second semiconductor material may be substantially the same. In another example, the first semiconductor material and the second semiconductor material may be different from each other. For example, the first semiconductor material may be a silicon-based semiconductor material (e.g., low-temperature polycrystalline silicon; LTPS), and the second semiconductor material may be an oxide semiconductor material. For example, the active layer may be a semiconductor layer, but is not limited thereto.

[0053] The controller 140 is a device for controlling the data driving circuit 120 and the gate driving circuit 130, and can control the driving timing of multiple data lines DL and multiple gate lines GL.

[0054] The controller 140 can supply a data drive control signal DCS to the data drive circuit 120 to control the data drive circuit 120, and can supply a gate drive control signal GCS to the gate drive circuit 130 to control the gate drive circuit 130.

[0055] The controller 140 can receive input image data from the host system 150 and supply image data DATA to the data drive circuit 120 based on the input image data.

[0056] The controller 140 can be implemented as a separate component from the data drive circuit 120, or it can be implemented as an integrated circuit by integrating it with the data drive circuit 120.

[0057] The controller 140 can be mounted on a printed circuit board or flexible printed circuit and can be electrically connected to the data drive circuit 120 and the gate drive circuit 130 via the printed circuit board or flexible printed circuit.

[0058] The display device 100 according to the embodiments of this disclosure may be a mobile terminal such as a smartphone or tablet computer, or a monitor or television (TV) of various sizes, and may be a display of various types and sizes capable of displaying information or images, but is not limited thereto.

[0059] The display device 100 according to embodiments of this disclosure may also include electronic devices such as a camera (e.g., an image sensor) or a detection sensor. For example, the detection sensor may be a sensor that detects objects or the human body by receiving light such as infrared, ultrasonic, or ultraviolet light, but embodiments of this disclosure are not limited thereto.

[0060] Figure 2 It is the equivalent circuit of the sub-pixel SP of the display device 100 according to the embodiment of the present disclosure.

[0061] Reference Figure 2 Each of the plurality of sub-pixels SP may include a light-emitting device ED and a sub-pixel circuit SPC configured to drive the light-emitting device ED.

[0062] The light-emitting device (ED) may include a first electrode and a second electrode. The first electrode may be connected to a sub-pixel circuit (SPC). The second electrode may be connected to a common voltage line to which a common voltage is applied.

[0063] For example, the first electrode can be a pixel electrode disposed in each sub-pixel SP, and the second electrode can be a common electrode. For example, the first electrode can be an anode electrode, and the second electrode can be a cathode electrode. In another example, the first electrode can be a cathode electrode, and the second electrode can be an anode electrode.

[0064] The common voltage required to drive the sub-pixel SP may include a low-potential common voltage VSS and a high-potential common voltage VDD. To drive the sub-pixel SP, the common voltage lines connected to the sub-pixel SP may include a low-potential common voltage line VSSL to which the low-potential common voltage VSS is applied and a high-potential common voltage line VDDL to which the high-potential common voltage VDD is applied.

[0065] The low-potential common voltage VSS and low-potential common voltage line VSSL can also be referred to as the base voltage and base voltage line, and the high-potential common voltage VDD and high-potential common voltage line VDDL can also be referred to as the driving voltage VDD and driving voltage line VDDL.

[0066] For example, such as Figure 2 As shown, the light-emitting device ED can be connected between the driving transistor DT and the low-potential common voltage line VSSL. In this case, the second electrode of the light-emitting device ED can be electrically connected to the low-potential common voltage line VSSL. The first electrode of the light-emitting device ED can be electrically connected to the sub-pixel circuit SPC.

[0067] In another example, the light-emitting device ED can be connected between the high-potential common voltage line VDDL and the driving transistor DT. In this case, the first electrode of the light-emitting device ED can be electrically connected to the high-potential common voltage line VDDL. The second electrode of the light-emitting device ED can be electrically connected to the sub-pixel circuit SPC.

[0068] For example, a light-emitting device ED can include an inorganic light-emitting diode (LED). For example, an inorganic light-emitting diode (LED) can also be called a miniature light-emitting diode (miniature LED).

[0069] The subpixel circuit SPC may include a driving transistor DT, a scanning transistor ST, and a storage capacitor Cst.

[0070] The driving transistor DT can be a transistor used to supply driving current to the light-emitting device ED. For example, the driving transistor DT can be connected between a common voltage line (e.g., a high-potential common voltage line VDDL or a low-potential common voltage line VSSL) and the light-emitting device ED.

[0071] The driving transistor DT may include a first node N1, a second node N2, and a third node N3. For example, the first node N1 of the driving transistor DT may be electrically connected to the first electrode of the light-emitting device ED, the second node N2 of the driving transistor DT may be supplied with a data signal VDATA, and the third node N3 of the driving transistor DT may be electrically connected to the high-potential common voltage line VDDL.

[0072] For example, in the driving transistor DT, the second node N2 can be the gate node, the first node N1 can be the source node or the drain node, and the third node N3 can be the drain node or the source node.

[0073] The scanning transistor ST can be a switching transistor used to transmit a data signal (VDATA) corresponding to the image signal to the second node N2, which is the gate node of the driving transistor DT.

[0074] For example, the scan transistor ST can be turned on and off by the scan signal SC to control the electrical connection between the second node N2 of the drive transistor DT and the data line DL. The scan signal SC is a type of gate signal applied through the scan line SCL, which is a type of gate line GL. The drain or source electrode of the scan transistor ST can be electrically connected to the data line DL, the source or drain electrode of the scan transistor ST can be electrically connected to the second node N2 of the drive transistor DT, and the gate electrode of the scan transistor ST can be electrically connected to the scan line SCL.

[0075] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the driving transistor DT. The storage capacitor Cst can include at least one capacitor electrode electrically connected to the first node N1 of the driving transistor DT or corresponding to the first node N1 of the driving transistor DT, and at least one capacitor electrode electrically connected to the second node N2 of the driving transistor DT or corresponding to the second node N2 of the driving transistor DT.

[0076] The storage capacitor Cst can be an external capacitor intentionally designed outside the driving transistor DT, rather than a parasitic capacitor (e.g., Cgs, Cgd) that can exist between the first node N1 and the second node N2 of the driving transistor DT. The driving transistor DT and the scan transistor ST can each be an n-type transistor or a p-type transistor.

[0077] For example, the semiconductor material contained in the active layer of the driving transistor DT and the semiconductor material contained in the active layer of the scanning transistor ST can be the same. For example, the semiconductor material contained in the active layer of both the driving transistor DT and the scanning transistor ST can be an oxide semiconductor material or a silicon-based semiconductor material (e.g., low-temperature polycrystalline silicon).

[0078] In another example, the semiconductor material contained in the active layer of the driving transistor DT and the semiconductor material contained in the active layer of the scanning transistor ST can be different from each other. For example, the semiconductor material contained in the active layer of the driving transistor DT can be an oxide semiconductor material, and the semiconductor material contained in the active layer of the scanning transistor ST can be a silicon-based semiconductor material (e.g., LTP), but is not limited thereto.

[0079] Sub-pixel circuit SPC can be like Figure 2 The diagram shows a 2T (transistor) 1C (capacitor) structure comprising two transistors DT and ST and a capacitor Cst, and may further include one or more transistors or one or more capacitors depending on the application. For example, a subpixel circuit SPC may have a structure comprising three to four transistors and a capacitor Cst. As another example, a subpixel circuit SPC may have a structure comprising five to nine transistors and one or more capacitors Cst, however, it is not limited thereto.

[0080] As an example, the light-emitting device ED can be a vertical light-emitting diode (see...). Figure 3 (and Figure 4). As another example, the light-emitting device ED can be a flip-chip light-emitting diode. As another example, the light-emitting device ED can be a lateral light-emitting diode; however, it is not limited thereto. In the following, a light-emitting device ED as an example of a vertical light-emitting diode will be described.

[0081] Figure 3 , Figure 4A and Figure 4B The light-emitting device ED of a display device 100 according to an embodiment of the present disclosure is shown.

[0082] Reference Figure 3 , Figure 4A and Figure 4B The light-emitting device ED may include a first electrode E1 and a second electrode E2, and an intermediate layer 310 between the first electrode E1 and the second electrode E2. The intermediate layer 310 may include a first semiconductor layer 311 disposed on the first electrode E1, a light-emitting layer 313 disposed on the first semiconductor layer 311, and a second semiconductor layer 312 disposed on the light-emitting layer 313.

[0083] As an example, refer to Figure 3 and Figure 4A The first electrode E1 can be an anode electrode, and the second electrode E2 can be a cathode electrode. As another example, refer to... Figure 4B The first electrode E1 can be a cathode electrode, and the second electrode E2 can be an anode electrode. Here, the anode electrode can also be called a p-type electrode (where "p" means hole), and the cathode electrode can also be called an n-type electrode (where "n" means electron).

[0084] For example, a pixel voltage supplied to the sub-pixel circuit SPC of the corresponding sub-pixel SP can be applied to the first electrode E1, and a common voltage (e.g., a low-potential common voltage VSS) can be applied to the second electrode E2. Here, the pixel voltage can be a voltage that changes according to the image or driving state.

[0085] In another example, a common voltage (e.g., a high-potential common voltage VDD) can be applied to the first electrode E1, and a pixel voltage supplied to the sub-pixel circuit SPC of the corresponding sub-pixel SP can be applied to the second electrode E2. Here, the pixel voltage can be a voltage that changes according to the image or driving state.

[0086] For example, the first electrode E1 may contain at least one of gold (Au), copper (Cu), tin (Sn), titanium (Ti), aluminum (Al), and silver (Ag). For example, the second electrode E2 may be made of a transparent metallic material capable of transmitting light (e.g., a transparent conductive material; TCO) (e.g., ITO (indium tin oxide) and IZO (indium zinc oxide)).

[0087] The first semiconductor layer 311 may be disposed on the first electrode E1. For example, the first semiconductor layer 311 may be a p-type semiconductor and may contain a semiconductor material having the chemical formula AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. For example, the semiconductor material contained in the first semiconductor layer 311 may be at least one of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto. The first semiconductor layer 311 may be doped with a p-type dopant, and the p-type dopant may be Mg, Zn, Ca, Se, or Ba, but is not limited thereto. For example, the first semiconductor layer 311 may be p-GaN doped with p-type Mg, but is not limited thereto.

[0088] Simultaneously, the light-emitting device ED may also include an electron blocking layer disposed on the first semiconductor layer 311. The electron blocking layer may be a layer used to suppress or prevent excessive electron flow to the light-emitting layer 313. For example, the electron blocking layer may be p-AlGaN doped with p-type Mg, but is not limited to this. The electron blocking layer may be omitted.

[0089] The light-emitting layer 313, also known as the active layer, can be disposed on the first semiconductor layer 311 or the electron blocking layer. The light-emitting layer 313 emits light through the recombination of electron-hole pairs based on an electrical signal applied through the first semiconductor layer 311 and the second semiconductor layer 312. The light-emitting layer 313 can emit one of a first color light, a second color light, and a third color light. For example, the first color light can be red light, the second color light can be green light, and the third color light can be blue light.

[0090] The emitting layer 313 may contain a material having a single quantum well or a multi-quantum well structure. If the emitting layer 313 contains a material having a multi-quantum well (MQW) structure, the emitting layer may have a structure in which multiple well layers and barrier layers are alternately laminated. In this case, the well layers may be formed of InGaN, and the barrier layers may be formed of GaN or AlGaN, but are not limited thereto.

[0091] Alternatively, the light-emitting layer 313 may have a structure in which semiconductor materials with large bandgap energy and semiconductor materials with small bandgap energy are alternately laminated, and may contain different Group III to Group V semiconductor materials depending on the wavelength of the emitted light. For example, if indium is included in the semiconductor materials contained in the light-emitting layer 313, the color of the emitted light can be changed depending on the indium content. For example, as the indium content increases, longer wavelength bands of light can be emitted. For example, if the indium content is about 15%, light in the blue wavelength band can be emitted; if the indium content is about 25%, light in the green wavelength band can be emitted; and if the indium content is 35% or more, light in the red wavelength band can be emitted.

[0092] Simultaneously, the light-emitting device ED may also include a superlattice layer disposed on the light-emitting layer 313. The superlattice layer may be a layer used to alleviate the stress between the second semiconductor layer 312 and the light-emitting layer 313. For example, the superlattice layer may be formed of InGaN or GaN. The superlattice layer may be omitted.

[0093] The second semiconductor layer 312 can be disposed on the light-emitting layer 313 or the superlattice layer. For example, the second semiconductor layer 312 can be an n-type semiconductor and can contain a semiconductor material having the chemical formula AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. For example, the semiconductor material contained in the second semiconductor layer 312 can be at least one of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto. For example, the second semiconductor layer 312 can be doped with an n-type dopant, and the n-type dopant can be Si, Ge, Sn, etc., but is not limited thereto. For example, the second semiconductor layer 312 can be n-GaN doped with n-type Si, but is not limited thereto.

[0094] The first electrode E1 can be composed of a single electrode layer or multiple electrode layers.

[0095] If the first electrode E1 is composed of multiple electrode layers, it may include a lower electrode E1a having a first area and an upper electrode E1b disposed on the lower electrode E1a and having a second area smaller than the first area. The upper electrode E1b may have an area smaller than the first semiconductor layer 311. Therefore, an undercut structure in which the lower part of the first semiconductor layer 311 is recessed can be formed. Thus, during the panel manufacturing process, after the transfer of the light-emitting device ED, the metal (e.g., the second lower electrode LE2) or insulating layer deposited on the light-emitting device ED can be cut or disconnected around the light-emitting device ED.

[0096] The light-emitting device ED may also include a protective film covering all or part of the side surface of the intermediate layer 310.

[0097] Reference Figure 3 The protective film of the light-emitting device ED may include a first protective film 320, which covers a portion of the lower surface and side surface of the first semiconductor layer 311 and the side surface of the light-emitting layer 313. The first protective film 320 may also cover a portion of the side surface of the second semiconductor layer 312.

[0098] The first protective film 320 may cover a portion of the side surface of the first electrode E1. For example, the first protective film 320 may cover a portion of the side surface of the upper electrode E1b of the first electrode E1, but may not cover the side surface of the lower electrode E1a of the first electrode E1. The upper surface of the lower electrode E1a of the first electrode E1 of the light-emitting device ED may be spaced apart from the first protective film 320.

[0099] The first protective film 320 may have holes, and at least a portion of the first semiconductor layer 311 may be exposed through the holes in the first protective film 320. The first semiconductor layer 311 and the first electrode E1 may be connected at the portion of the first semiconductor layer 311 exposed through the holes in the first protective film 320. For example, the upper electrode E1b of the first electrode E1 may be connected to the first semiconductor layer 311 through the holes in the first protective film 320.

[0100] For example, such as Figure 3 and Figure 4A As shown, the second semiconductor layer 312 can be formed to be thicker than the first semiconductor layer 311, allowing the light-emitting layer 313 to be positioned closer to the first electrode E1 than the second electrode E2. In this case, the first electrode E1 can be a p-type electrode. As another example, such as Figure 4B As shown, the second semiconductor layer 312 can be formed thinner than the first semiconductor layer 311, so that the light-emitting layer 313 can be positioned closer to the second electrode E2 than the first electrode E1. In this case, the second electrode E2 can be a p-type electrode.

[0101] Reference Figure 3The protective film of the light-emitting device ED may include a second protective film 330, which covers the side surface of the second semiconductor layer 312. The second protective film 330 may cover the entire side surface of the second electrode E2 and a portion of the upper surface of the second electrode E2. The second protective film 330 may have holes, and at least a portion of the second electrode E2 may be exposed through the holes in the second protective film 330. The portion of the second electrode E2 exposed through the holes in the second protective film 330 may be connected to another electrode located above the second electrode E2 (e.g., ...). Figure 5A The upper electrode (UE) in the middle.

[0102] Reference Figure 3 A first protective film 320 may be disposed on a first side (e.g., the lower side) of the intermediate layer 310, and a second protective film 330 may be disposed on a second side (e.g., the upper side) of the intermediate layer 310. The first protective film 320 and the second protective film 330 may contact each other at the boundary between the first and second sides. The first protective film 320 and the second protective film 330 may contact each other at the boundary between the first and second sides while protruding outward toward the outside of the light-emitting device ED. Therefore, the sealing characteristics of the light-emitting device ED with respect to the intermediate layer 310 can be improved. In addition, an undercut structure in which the lower portion of the first protective film 320 is recessed toward the center of the light-emitting device ED can be formed. As a result, after the light-emitting device ED is formed, the metal (e.g., the second lower electrode LE2) or insulating layer deposited on the light-emitting device ED can be cut off around the light-emitting device ED.

[0103] Reference Figure 4A The protective film of the light-emitting device ED may include a first protective film 320 covering each side of the first semiconductor layer 311 and the light-emitting layer 313, but may not include a second protective film 330 covering the side of the second semiconductor layer 312. In this case, the light-emitting layer 313 may be positioned closer to the first electrode E1 than the second electrode E2, and the first protective film 320 may cover the side of the light-emitting layer 313.

[0104] Reference Figure 4B The protective film of the light-emitting device ED may include a second protective film 330 covering the side surface of the second semiconductor layer 312, but may not include the first protective film 320 covering the respective side surfaces of the first semiconductor layer 311 and the light-emitting layer 313. In this case, the light-emitting layer 313 may be positioned closer to the second electrode E2 than the first electrode E1, and the second protective film 330 may cover the side surface of the light-emitting layer 313.

[0105] like Figure 4BAs shown, by omitting the lower first protective film 320 in the first protective film 320 and the second protective film 330, an undercut structure in which the lower surface of the intermediate layer 310 is more significantly recessed can be effectively formed. Therefore, a more precise disconnection structure can be formed for the deposited metal or insulating layer after the transfer light-emitting device ED.

[0106] Reference Figure 3 , Figure 4A and Figure 4B The size SIZE_E1 of the first electrode E1 can be equal to or larger than the chip size of the light-emitting device ED. Furthermore, the size SIZE_E1 of the first electrode E1 can be larger than the size SIZE_OTHER of the portion of the light-emitting device ED excluding the first electrode E1. Here, the size SIZE_OTHER of the portion of the light-emitting device ED excluding the first electrode E1 can be the area inside the outer edge of the protective films 320 and 330, or the area inside the outer edge of the intermediate layer 310. The size SIZE_E1 of the first electrode E1 can be the area of ​​the first electrode E1. The size SIZE_E1 of the first electrode E1 can be the first area of ​​the lower electrode E1a.

[0107] According to the embodiments of this disclosure, the size SIZE_E1 of the first electrode E1 of the light-emitting device ED is designed to be equal to or greater than the chip size of the light-emitting device ED, or the size SIZE_E1 of the first electrode E1 of the light-emitting device ED is designed to be greater than the size SIZE_OTHER of other parts, so that if a defect occurs in the light-emitting device ED, it is convenient to repair the sub-pixel SP including the defective light-emitting device ED.

[0108] The height of the upper electrode E1b can be greater than the height of the lower electrode E1a.

[0109] According to the embodiments of this disclosure, since the upper surface of the lower electrode E1a of the first electrode E1 of the light-emitting device ED is spaced apart from the first protective film 320, if a defect occurs in the light-emitting device ED, it is convenient to repair the sub-pixel SP of the defective light-emitting device ED.

[0110] The following text will describe in more detail the following, including Figure 3 The display panel 110 of the light-emitting device ED. Referring to it in the following description... Figures 1 to 4A and Figure 4B .

[0111] Figure 5A and Figure 5B This is a cross-sectional view of the display panel 110 according to an embodiment of the present disclosure.

[0112] Figure 5A and Figure 5BThis is a cross-sectional view of the display panel 110 manufactured by determining that the first light-emitting device ED1 included in the first sub-pixel SP is normal during the inspection process performed during the manufacturing process of the display panel 110.

[0113] Figure 5A This is a cross-sectional view of a display panel 110, which was manufactured without any repair processing because it was determined that the first light-emitting device ED1 included in the first sub-pixel SP was normal and all light-emitting devices included in the other sub-pixels SP were normal.

[0114] Figure 5B This is a cross-sectional view of display panel 110, which is manufactured by performing repair processing on the second sub-pixels when it is determined that the first light-emitting device ED1 included in the first sub-pixel SP is normal, but the light-emitting device included in the second sub-pixel in other sub-pixels SP is defective. (Refer to...) Figure 5A and Figure 5B According to an embodiment of the present disclosure, the display panel 110 may include a substrate 111, an insulating layer 560 disposed on the substrate 111 and having a plurality of grooves GRV, a first lower electrode LE1 disposed on the insulating layer 560, a first light-emitting device ED1 disposed on the insulating layer 560 and including a first electrode E1 and a second electrode E2, at least one organic layer 570 and 580 disposed around the first light-emitting device ED1 and filling the interior of the groove GRV adjacent to the first light-emitting device ED1 in the plurality of grooves GRV of the insulating layer 560, and an upper electrode UE disposed on the organic layers 570 and 580.

[0115] The insulating layer 560 may have multiple recessed grooves (GRVs). Each of the multiple recessed grooves (GRVs) formed in the insulating layer 560 may exist for each sub-pixel SP. In some cases, two or more of the multiple recessed grooves (GRVs) formed in the insulating layer 560 may exist for each sub-pixel SP. Each of the multiple recessed grooves (GRVs) formed in the insulating layer 560 may be a repair site for repairing the corresponding sub-pixel SP, and may be a region of a light-emitting device transferred during the repair process to replace a defective light-emitting device included in the corresponding sub-pixel SP. The recessed groove (GRV) adjacent to the first light-emitting device ED1 may be a recessed groove (GRV) located in the region of the first sub-pixel SP among the multiple recessed grooves (GRVs) formed in the insulating layer 560, and may be a recessed groove (GRV) provided for repairing the first sub-pixel SP.

[0116] The first light-emitting device ED1 can be disposed on the insulating layer 560, located outside the groove GRV, and can be disposed adjacent to the groove GRV.

[0117] The first light-emitting device ED1 is included in the first sub-pixel SP and can be a light-emitting device capable of normal light emission. The first light-emitting device ED1 can be a light-emitting device that is determined to be a normal light-emitting device during an inspection process performed during the panel manufacturing process.

[0118] The first lower electrode LE1 can be positioned on the insulating layer 560 and can be connected by extending into the groove GRV. That is, the first lower electrode LE1 can be continuously connected inside the groove GRV of the insulating layer 560. For example, the first lower electrode LE1 can be formed of a transparent electrode and can be formed of a transparent metallic material that can transmit light (e.g., a transparent conductive material; TCO) (e.g., ITO (indium tin oxide) and IZO (indium zinc oxide)), but is not limited thereto.

[0119] At least one organic layer may include a first organic layer 570 and a second organic layer 580 on the first organic layer 570. The first organic layer 570 may surround the first protective film 320, and the second organic layer 580 may surround the second protective film 330.

[0120] Insulating layer 560 can also be called adhesive layer.

[0121] The display panel 110 may also include a connection electrode CE disposed on the insulating layer 560. The connection electrode CE may be disposed below the first lower electrode LE1 and may be connected to the first lower electrode LE1. For example, the connection electrode CE may be a reflective electrode.

[0122] The display panel 110 may also include a transistor TFT included in the sub-pixel circuit SPC for driving the first light-emitting device ED1.

[0123] A transistor TFT may include an active layer ACT, a source electrode S, a drain electrode D, and a gate electrode G.

[0124] The source electrode S or drain electrode D of the transistor TFT can be electrically connected to the connection electrode CE. That is, the source electrode S or drain electrode D of the transistor TFT can be electrically connected to the first lower electrode LE1 through the connection electrode CE.

[0125] To form the transistor TFT, the display panel 110 may further include an insulating layer, which includes a gate insulating layer 520, at least one interlayer insulating layer 530 and 540 on the gate insulating layer 520, and a passivation layer 550 on the at least one interlayer insulating layer 530 and 540. The insulating layer 560 may be disposed on the passivation layer 550.

[0126] An active layer ACT can be formed on substrate 111.

[0127] A gate insulating layer 520 can be set on the active layer ACT.

[0128] The gate electrode G can be disposed on the gate insulating layer 520.

[0129] At least one interlayer insulating layer 530 and 540 may be provided on the gate electrode G. For example, at least one interlayer insulating layer 530 and 540 may include a first interlayer insulating layer 530 provided on the gate electrode G and a second interlayer insulating layer 540 provided on the first interlayer insulating layer 530.

[0130] The source electrode S and the drain electrode D can be disposed on the second interlayer insulating layer 540.

[0131] The source electrode S can be connected to a portion of the active layer ACT through holes in the second interlayer insulating layer 540, the first interlayer insulating layer 530, and the gate insulating layer 520.

[0132] The drain electrode D can be connected to another part of the active layer ACT through another hole in the second interlayer insulating layer 540, the first interlayer insulating layer 530 and the gate insulating layer 520.

[0133] A passivation layer 550 can be formed on the source electrode S and the drain electrode D.

[0134] An insulating layer 560 can be provided on the passivation layer 550.

[0135] The connecting electrode CE can be electrically connected to the source electrode S or drain electrode D of the transistor TFT through the holes in the insulating layer 560 and the passivation layer 550.

[0136] The display panel 110 may also include a power line 545 to which a common voltage is applied. For example, the common voltage applied to the power line 545 may be a low-potential common voltage VSS. In this case, the power line 545 may be a low-potential common voltage line VSSL or wiring connected thereto. In another example, the common voltage applied to the power line 545 may be a high-potential common voltage VDD. In this case, the power line 545 may be a high-potential common voltage line VDDL or wiring connected thereto.

[0137] Power line 545 can be disposed below insulating layer 560. Upper electrode UE can be electrically connected to power line 545 through holes in second organic layer 580, first organic layer 570, and insulating layer 560. For example, power line 545 can be disposed between second interlayer insulating layer 540 and passivation layer 550, and upper electrode UE can be electrically connected to power line 545 through holes in second organic layer 580, first organic layer 570, insulating layer 560, and passivation layer 550.

[0138] In the display panel 110, light emitted from the first light-emitting device ED1 can be emitted in an upward direction, opposite to the direction toward the substrate 111. Here, the upward direction can be the direction from the first electrode E1 toward the second electrode E2.

[0139] Reference Figure 5A and Figure 5B The display panel 110 may also include a buffer layer 510 between the substrate 111 and the gate insulating layer 520, and a shielding metal BSM disposed between the substrate 111 and the buffer layer 510 and overlapping with the active layer ACT of the transistor TFT.

[0140] Figure 5A and Figure 5B The transistor TFT can be a transistor included in the sub-pixel circuit SPC and connected to the first light-emitting device ED1. For example, Figure 5A and Figure 5B The transistor TFT can be a driving transistor DT or a switching transistor. Here, the switching transistor can be a transistor that is turned on or off by a scan signal or a transmit control signal, and can be connected to one of the first to third nodes of the driving transistor DT.

[0141] Reference Figure 5A and Figure 5B The first electrode E1 of the first light-emitting device ED1 can be electrically connected to the first lower electrode LE1. The second electrode E2 of the first light-emitting device ED1 can be electrically connected to the upper electrode UE.

[0142] In the structure in which the first electrode E1 of the first light-emitting device ED1 is connected to the first lower electrode LE1, the back surface of the first electrode E1 of the first light-emitting device ED1 may not be connected to the upper surface of the first lower electrode LE1, but the side surface and the upper surface of the first electrode E1 of the first light-emitting device ED1 may be connected to the first lower electrode LE1. This connection structure can be called a side contact structure.

[0143] For example, the first electrode E1 of the first light-emitting device ED1 can be an anode electrode, and the second electrode E2 of the first light-emitting device ED1 can be a cathode electrode. In this case, the first lower electrode LE1 can be an anode wiring, and the upper electrode UE can be a cathode wiring.

[0144] In another example, the first electrode E1 of the first light-emitting device ED1 can be a cathode electrode, and the second electrode E2 of the first light-emitting device ED1 can be an anode electrode. In this case, the first lower electrode LE1 can be a cathode wiring, and the upper electrode UE can be an anode wiring.

[0145] Reference Figure 5A and Figure 5BThe first electrode E1 of the first light-emitting device ED1 may have the largest size in the first light-emitting device ED1.

[0146] The first electrode E1 may include a lower electrode E1a disposed on the insulating layer 560 and an upper electrode E1b disposed on the lower electrode E1a. The lower electrode E1a may have a first area, and the upper electrode E1b may have a second area smaller than the first area.

[0147] Among the plurality of groove GRVs in the insulating layer 560, the groove GRV formed in the region including the first sub-pixel SP of the first light-emitting device ED1 can be a space that is transferred to replace the light-emitting device ED1 during the repair process of the first sub-pixel SP. That is, the groove GRV of the insulating layer 560 can be a space arranged as a repair site. If no repair process is performed, the groove GRV of the insulating layer 560 can be filled with the first organic layer 570.

[0148] Reference Figure 5A If it is determined during the panel manufacturing process that the first light-emitting device ED1 included in the first sub-pixel is normal and that all light-emitting devices included in other sub-pixels are normal, then no repair process is performed. Therefore, in the manufactured display panel 110, only the first lower electrode LE1 can be connected to the first electrode E1 of the normal first light-emitting device ED1.

[0149] Reference Figure 5B If, during the panel manufacturing process, it is determined that the first light-emitting device ED1 included in the first sub-pixel is normal, but it is determined that the light-emitting device included in the second sub-pixel in other sub-pixels is defective, then the second sub-pixel can be repaired. Therefore, in the completed display panel 110, both the first lower electrode LE1 and the second lower electrode LE2 can be connected to the first electrode E1 of the normal first light-emitting device ED1.

[0150] Figure 6 This is a cross-sectional view of the display panel 110 according to an embodiment of the present disclosure.

[0151] Figure 6 This is a cross-sectional view of a display panel 110 in which a defect was determined in the first light-emitting device ED1 included in the first sub-pixel SP during an inspection process performed during the manufacturing process of the display panel 110, and the first sub-pixel SP was repaired. Reference is also made to the following description. Figure 5A and Figure 5B . can be omitted and referenced. Figure 5A and Figure 5B Descriptions of content that are identical to the descriptions provided.

[0152] Reference Figure 6According to the embodiments of the present disclosure, the display panel 110 may include a substrate 111, an insulating layer 560 disposed on the substrate 111 and having a plurality of grooves GRV, a first lower electrode LE1 disposed on the insulating layer 560, and a first light-emitting device ED1 disposed on the insulating layer 560 and including a first electrode E1 and a second electrode E2.

[0153] Reference Figure 6 According to the embodiments of this disclosure, the display panel 110 may further include a capturing material CM, a second light-emitting device ED2, and a second lower electrode LE2.

[0154] The capturing material CM can be disposed inside the groove GRV adjacent to the first light-emitting device ED1 among the multiple groove GRVs in the insulating layer 560. Here, the groove GRV adjacent to the first light-emitting device ED1 is the groove GRV located in the region of the first sub-pixel SP among the multiple groove GRVs formed in the insulating layer 560, and can be a groove GRV provided for repairing the first sub-pixel SP.

[0155] The second light-emitting device ED2 can be disposed in the region including the first sub-pixel SP of the first light-emitting device ED1. The second light-emitting device ED2 can be used as the light-emitting device of the first sub-pixel SP in place of the first light-emitting device ED1, which is determined to be defective.

[0156] The second light-emitting device ED2 can be disposed on the capture material CM applied or formed inside the groove GRV (which is a repair site formed in the region of the first sub-pixel SP), and can include a first electrode E1 and a second electrode E2.

[0157] The second lower electrode LE2 can be disposed on the first lower electrode LE1 and can be connected to the first lower electrode LE1. Here, the metal constituting the second lower electrode LE2 can also be referred to as the second lower electrode metal.

[0158] In the region where each of the first light-emitting device ED1 and the second light-emitting device ED2 is disposed, a metal pattern MP may be present on the second protective film 330 and the second electrode E2 of each of the first light-emitting device ED1 and the second light-emitting device ED2. The metal pattern MP may be the same metal as the second lower electrode LE2 (i.e., the second lower electrode metal), and may be a metal pattern that is disconnected from the second lower electrode LE2 during the panel manufacturing process.

[0159] The first light-emitting device ED1 and the second light-emitting device ED2 may each have an undercut structure in which the lower part of the intermediate layer 310 is recessed inward. Therefore, during the panel manufacturing process, when the second lower electrode metal is deposited to form the second lower electrode LE2, the second lower electrode metal can be cut or broken along the respective edges of the first light-emitting device ED1 and the second light-emitting device ED2, so that the second lower electrode LE2 and the metal pattern MP can be formed separately.

[0160] For example, the first lower electrode LE1 and the second lower electrode LE2 can be transparent electrodes. In another example, the first lower electrode LE1 and the second lower electrode LE2 can be reflective electrodes. In yet another example, the first lower electrode LE1 can be a reflective electrode, and the second lower electrode LE2 can be a transparent electrode. For example, if at least one of the first lower electrode LE1 and the second lower electrode LE2 is configured as a transparent electrode capable of transmitting light, then at least one of the first lower electrode LE1 and the second lower electrode LE2 can be made of a transparent metallic material (e.g., a transparent conductive material; TCO) (e.g., ITO (indium tin oxide) and IZO (indium zinc oxide)), but is not limited thereto.

[0161] As an example, the first lower electrode LE1 and the second lower electrode LE2 can be electrodes patterned identically using the same mask. As another example, the first lower electrode LE1 and the second lower electrode LE2 can be electrodes patterned differently using different masks. In the area where the first light-emitting device ED1 and the second light-emitting device ED2 are located, a metal pattern MP made of the same metal as the second lower electrode LE2 can be formed on each of the first light-emitting device ED1 and the second light-emitting device ED2. Here, the metal pattern MP provided on each of the first light-emitting device ED1 and the second light-emitting device ED2 can be metal that is disconnected from the second lower electrode LE2 during the panel manufacturing process.

[0162] If a defect is found in the first light-emitting device ED1 during the inspection process during the panel manufacturing process, a repair process can be performed on the first sub-pixel SP including the first light-emitting device ED1.

[0163] The restoration process for the first sub-pixel SP may include the process of forming a capture material CM, a second light-emitting device ED2, and a second lower electrode LE2. That is, the capture material CM, the second light-emitting device ED2, and the second lower electrode LE2 may be components formed according to the restoration process.

[0164] Reference Figure 6As described above, both the first light-emitting device ED1 and the second light-emitting device ED2 can be included in the first sub-pixel SP. The first light-emitting device ED1 can be a defective light-emitting device that cannot emit light normally. The second light-emitting device ED2 can be a light-emitting device that replaces the first light-emitting device ED1, or it can be a normal light-emitting device that can emit light normally.

[0165] Reference Figure 6 The first electrode E1 of the second light-emitting device ED2 can contact the second lower electrode LE2. The first electrode E1 of the first light-emitting device ED1 can contact the first lower electrode LE1.

[0166] The first electrode E1 and the second lower electrode LE2 of the second light-emitting device ED2 can be connected to form a side contact structure. That is, it is not the back surface of the first electrode E1 of the second light-emitting device ED2 that is connected to the upper surface of the second lower electrode LE2, but rather the side surface and the upper surface of the first electrode E1 of the second light-emitting device ED2 that can be connected to the second lower electrode LE2.

[0167] Reference Figure 6 The trapping material CM can have a thickness corresponding to the depth of the groove GRV of the insulating layer 560. For example, the trapping material CM can include an adhesive organic material. For example, the trapping material CM can include photopolymer acrylic.

[0168] During the repair process, the second light-emitting device ED2 can be transferred onto the trapping material CM filled in the groove GRV of the insulating layer 560. Therefore, the height of the upper surface of the first light-emitting device ED1 from the substrate 111 can correspond to the height of the upper surface of the second light-emitting device ED2 from the substrate 111.

[0169] Reference Figure 6 A connection electrode CE can be disposed between the insulating layer 560 and the first lower electrode LE1. The connection electrode CE can electrically connect the first lower electrode LE1 to the source electrode S or drain electrode D of the transistor TFT through a hole in the insulating layer 560. Here, the first lower electrode LE1 can be disposed on the insulating layer 560, and the transistor TFT can be disposed below the insulating layer 560.

[0170] The connection point between the electrode CE and the transistor TFT can be located between the first light-emitting device ED1 and the second light-emitting device ED2. Therefore, the transistor TFT can be effectively connected to one of the first light-emitting device ED1 and the second light-emitting device ED2. Thus, effective driving of one of the first light-emitting devices ED1 and the second light-emitting device ED2 can be achieved.

[0171] Reference Figure 6At least one organic layer 570 and 580 may be disposed around the first light-emitting device ED1 and the second light-emitting device ED2. The at least one organic layer 570 and 580 may include a first organic layer 570 and a second organic layer 580. For example, the first organic layer 570 and the second organic layer 580 may each contain photopolymer acrylic.

[0172] Reference Figure 6 The upper electrode UE can be disposed on at least one organic layer 570 and 580, and can be connected to the second electrode E2 of the first light-emitting device ED1 and the second electrode E2 of the second light-emitting device ED2. A metal pattern MP made of the same metal as the second lower electrode LE2 can exist between the upper electrode UE and the second electrode E2 of the second light-emitting device ED2. The upper electrode UE can be connected to the metal pattern MP on the second light-emitting device ED2, and the metal pattern MP can be connected to the second electrode E2 of the second light-emitting device ED2, so that the upper electrode UE and the second electrode E2 of the second light-emitting device ED2 can be electrically connected to each other.

[0173] Reference Figure 6 The upper electrode UE can be electrically connected to a power line 545 to which a common voltage is applied. For example, the common voltage applied to the power line 545 can be a low-potential common voltage VSS. In this case, the power line 545 can be a low-potential common voltage line VSSL or wiring connected thereto. As another example, the common voltage applied to the power line 545 can be a high-potential common voltage VDD. In this case, the power line 545 can be a high-potential common voltage line VDDL or wiring connected thereto.

[0174] For example, the first electrode E1 of the second light-emitting device ED2 can be an anode electrode, and the second electrode E2 of the second light-emitting device ED2 can be a cathode electrode. In this case, the first lower electrode LE1 and the second lower electrode LE2 can be anode wiring, and the upper electrode UE can be cathode wiring.

[0175] As another example, the first electrode E1 of the second light-emitting device ED2 can be a cathode electrode, and the second electrode E2 of the second light-emitting device ED2 can be an anode electrode. In this case, the first lower electrode LE1 and the second lower electrode LE2 can be cathode wiring, and the upper electrode UE can be anode wiring.

[0176] The first light-emitting device ED1 and the second light-emitting device ED2 may each include an intermediate layer 310 between the first electrode E1 and the second electrode E2.

[0177] The intermediate layer 310 may include a light-emitting layer 313, a first semiconductor layer 311 between the first electrode E1 and the light-emitting layer 313, and a second semiconductor layer 312 between the second electrode E2 and the light-emitting layer 313.

[0178] Reference Figure 6 The first light-emitting device ED1 and the second light-emitting device ED2 may each include a first protective film 320 surrounding the side of the first semiconductor layer 311 and the side of the light-emitting layer 313. The first light-emitting device ED1 and the second light-emitting device ED2 may each include a second protective film 330 surrounding the second semiconductor layer 312.

[0179] Reference Figure 6 The first electrode E1 of each of the first light-emitting device ED1 and the second light-emitting device ED2 can be the portion with the largest area in each of the first light-emitting device ED1 and the second light-emitting device ED2. Therefore, the size of the light-emitting device ED can be the same as the size SIZE_E1 of the first electrode E1.

[0180] Reference Figure 6 The first electrode E1 of the first light-emitting device ED1 and the second light-emitting device ED2 may include a lower electrode E1a having a first area and an upper electrode E1b disposed on the lower electrode E1a and having a second area smaller than the first area.

[0181] Reference Figure 6 In the first electrode E1 of the second light-emitting device ED2, the lower electrode E1a can contact the second lower electrode LE2, which includes a lower electrode E1a and an upper electrode E1b. Here, the second light-emitting device ED2 can be a light-emitting device transferred during the repair process, and the second lower electrode LE2 can also be a newly formed electrode during the repair process.

[0182] The height of the upper electrode E1b of the first electrode E1 of the second light-emitting device ED2 can be greater than the height of the lower electrode E1a of the second light-emitting device ED2. Therefore, the second lower electrode LE2 can be easily inserted between the upper electrode E1b and the lower electrode E1a of the second light-emitting device ED2, and thus, the upper surface of the lower electrode E1a and the side surface of the upper electrode E1b can be well connected with the second lower electrode LE2.

[0183] In the first electrode E1 of the first light-emitting device ED1, the lower electrode E1a can contact the first lower electrode LE1. Here, the first light-emitting device ED1 is a light-emitting device transferred before the repair process, and the first lower electrode LE1 can also be an electrode formed before the repair process.

[0184] Reference Figure 6 The first electrode E1 of the first light-emitting device ED1 can be connected to the first lower electrode LE1 and the second lower electrode LE2.

[0185] Meanwhile, as described above, a metal pattern MP made of the same metal as the second lower electrode LE2 may exist on the first light-emitting device ED1 and the second light-emitting device ED2. The metal pattern MP existing on the first light-emitting device ED1 and the second light-emitting device ED2 may be physically and electrically separated from the second lower electrode LE2.

[0186] The metal pattern MP on the second light-emitting device ED2 can be disposed between the upper electrode UE and the second electrode E2 of the second light-emitting device ED2. That is, the rear surface of the metal pattern MP can be connected to the upper surface of the second electrode E2 of the second light-emitting device ED2, and the upper surface of the metal pattern MP can be connected to the rear surface of the upper electrode UE. Therefore, the upper electrode UE and the second electrode E2 of the second light-emitting device ED2 can be electrically connected through the metal pattern MP on the second light-emitting device ED2.

[0187] The first light-emitting device ED1 can be a defective light-emitting device that cannot emit light at all. In this case, the sub-pixel SP including the first light-emitting device ED1 can appear as a dark spot. That is, the first light-emitting device ED1 can be a defective light-emitting device that causes abnormal dark spots on the screen.

[0188] If the first light-emitting device ED1 is a defective light-emitting device that causes abnormal dark spots on the screen, that is, if the first light-emitting device ED1 is a defective light-emitting device that cannot emit light at all, then the first electrode E1 of the first light-emitting device ED1 can be connected to the first lower electrode LE1 and the second lower electrode LE2. Therefore, during the repair process, it is not necessary to disconnect the first electrode E1 of the defective light-emitting device ED1 from the first lower electrode LE1 and the second lower electrode LE2.

[0189] Meanwhile, the first light-emitting device ED1 can be a defective light-emitting device that emits abnormally bright light. In this case, the sub-pixel SP including the first light-emitting device ED1 can appear as a bright spot. In other words, the first light-emitting device ED1 can be a defective light-emitting device that causes abnormal bright spots on the screen.

[0190] In the following text, reference will be made to Figure 7 The description is of a defective light-emitting device ED1 that causes abnormal bright spots on the screen.

[0191] Figure 7 This is a cross-sectional view of the display panel 110 according to an embodiment of the present disclosure.

[0192] The first light-emitting device ED1 is a light-emitting device included in the first sub-pixel SP, and may be a defective light-emitting device that emits abnormally bright light. In this case, the first sub-pixel SP including the first light-emitting device ED1 may appear as a bright spot. In other words, the first light-emitting device ED1 may be a defective light-emitting device that causes abnormal bright spots on the screen.

[0193] For example, if the first electrode E1 and the second electrode E2 of the first light-emitting device ED1 are short-circuited, a defective bright spot may appear.

[0194] If the first light-emitting device ED1 is a defective light-emitting device that causes abnormal bright spots on the screen, that is, if the first light-emitting device ED1 is a defective light-emitting device that emits abnormally bright light, then the first electrode E1 of the first light-emitting device ED1 needs not be connected to the first lower electrode LE1 and the second lower electrode LE2.

[0195] Therefore, as Figure 7 As shown, during the repair process, it is necessary to disconnect or disconnect the first electrode E1 of the defective light-emitting device ED1 from the first lower electrode LE1 and the second lower electrode LE2.

[0196] Based on the results of the cutting process during the repair process, the first electrode E1 of the first light-emitting device ED1 can be disconnected from the first lower electrode LE1 and the second lower electrode LE2.

[0197] Figures 8 to 16 The manufacturing process of a display panel 110 according to an embodiment of the present disclosure is shown. Reference is also made in the following description. Figures 1 to 7 .

[0198] Reference Figures 8 to 11 The manufacturing process of the display panel 110 may include: a first step S10 of transferring the light-emitting device ED including the first light-emitting device ED1; a second step S20 of forming the first lower electrode LE1; a third step S30 of inspecting the light-emitting device ED including the first light-emitting device ED1; and a fourth step S40 of forming organic layers 570 and 580 and the upper electrode UE if it is determined in the third step S30 that the first light-emitting device ED1 is normal.

[0199] Reference Figures 12 to 16The manufacturing process of the display panel 110 may further include: a fifth step S50 in which a trapping material CM is formed at a repair site if a defect is determined in the third step S30; a sixth step S60 in which the second light-emitting device ED2 is transferred onto the trapping material CM; a seventh step S70 in which the second lower electrode LE2 is formed; an eighth step S80 in which the second light-emitting device ED2 is inspected; and a ninth step S90 in which organic layers 570 and 580 and the upper electrode UE are formed.

[0200] Based on the inspection results in step S30, step S40 can be performed, or steps S50 through S90 can be performed. That is, if the inspection results in step S30 determine that the first light-emitting device ED1 is normal, step S40 can be performed. If the inspection results in step S30 determine that the first light-emitting device ED1 is defective, step S40 is not performed, and steps S50 through S90 can be performed.

[0201] If the inspection result in the third step S30 determines that the first light-emitting device ED1 is defective, this could mean that the sub-pixel SP including the first light-emitting device ED1 is a defective sub-pixel.

[0202] Therefore, steps S50 to S90 can be processing techniques for repairing sub-pixels SP, including the first light-emitting device ED1.

[0203] Reference Figures 8 to 16 The manufacturing process of the display panel 110, which was briefly described above, will be described in more detail. For ease of explanation, from... Figures 8 to 16 The substrate 111, buffer layer 510, gate insulating layer 520, first interlayer insulating layer 530 and transistor TFT are omitted in the cross-sectional view.

[0204] Reference Figure 8 The first step, S10, is to transfer the light-emitting device ED.

[0205] Before performing the transfer process in the first step S10, a process for forming a transistor TFT can be performed.

[0206] In the process of forming a transistor TFT, the formation of the gate electrode G, source electrode S and drain electrode D of the transistor TFT can be combined to form an insulating film structure on the substrate 111 including a buffer layer 510, a gate insulating layer 520, a first interlayer insulating layer 530, a second interlayer insulating layer 540 and a passivation layer 550.

[0207] After the process of forming the transistor TFT, a transfer preparation step for transferring the light-emitting device ED can be performed. In the transfer preparation step, an insulating layer 560 corresponding to the adhesive layer can be formed on the passivation layer 550, and a connection electrode CE can be formed on the insulating layer 560.

[0208] In the transfer preparation step, the connecting electrode CE can be electrically connected to the source electrode S or drain electrode D of the transistor TFT through the holes in the insulating layer 560.

[0209] Additionally, during the transfer preparation step, grooved GRVs can be formed in the insulating layer 560. These grooved GRVs in the insulating layer 560 can serve as repair sites for future repair treatments.

[0210] After the transfer preparation step, the transfer process of the first step S10 (e.g., the first transfer process) can be performed, so that the light-emitting device ED including the first light-emitting device ED1 can be transferred onto the insulating layer 560. In this case, the connecting electrode CE can be open at the site where the light-emitting device ED is to be transferred. That is, the transferred light-emitting device ED and the connecting electrode CE can not overlap each other in the vertical direction.

[0211] The light-emitting device ED may include a first electrode E1 and a second electrode E2, and an intermediate layer 310 between the first electrode E1 and the second electrode E2. The intermediate layer 310 may include a first semiconductor layer 311 disposed on the first electrode E1, a light-emitting layer 313 disposed on the first semiconductor layer 311, and a second semiconductor layer 312 disposed on the light-emitting layer 313.

[0212] The first electrode E1 may include a lower electrode E1a having a first area and an upper electrode E1b disposed on the lower electrode E1a and having a second area smaller than the first area.

[0213] The light-emitting device ED may also include a first protective film 320 covering each side of the first semiconductor layer 311 and the light-emitting layer 313, and a second protective film 330 covering the side of the second semiconductor layer 312.

[0214] Reference Figure 9 In the second step S20, a first lower electrode LE1 can be formed. In the second step S20, the first lower electrode LE1 can be formed on the connecting electrode CE and can be electrically connected to the connecting electrode CE.

[0215] In the second step S20, the first lower electrode LE1 can be electrically connected to the first electrode E1 of the first light-emitting device ED1. For example, the first lower electrode LE1 can be electrically connected to the upper surface of the lower electrode E1a of the first electrode E1. The first lower electrode LE1 can also be electrically connected to the side surface of the upper electrode E1b of the first electrode E1.

[0216] In the second step S20, a first lower electrode LE1 may be formed inside the groove GRV of the insulating layer 560. The first lower electrode LE1 may be disposed on the inner surface of the groove GRV of the insulating layer 560, and may extend to be disposed on the bottom of the groove GRV.

[0217] Reference Figure 10 In the third step S30, the light-emitting device ED, including the first light-emitting device ED1, can be inspected. The inspection in the third step S30 can be an initial inspection to determine whether the light-emitting device ED transferred first is normal or defective.

[0218] For example, the inspection in the third step S30 can be a lighting inspection to verify whether the previously transferred light-emitting device ED can emit light. The lighting inspection can be performed by applying a first inspection voltage V1 to the first lower electrode LE1 and a second inspection voltage V2, different from the first inspection voltage V1, to the second electrode E2 of each light-emitting device ED to check whether each light-emitting device ED can emit light. During the lighting inspection, light-emitting devices ED that emit light within a set brightness range can be determined to be normal; light-emitting devices ED that do not emit light can be determined to be defective light-emitting devices with dark spot defects; and light-emitting devices ED that emit light at a brightness or luminance exceeding the set brightness range can be determined to be defective light-emitting devices with bright spot defects.

[0219] As a result of the inspection, it can be determined whether each light-emitting device (ED) is normal or defective. Furthermore, the inspection results can also determine the type of defect in the defective EDs. Defects can include dark spots where the ED does not emit light at all, and bright spots where the ED emits abnormally bright light.

[0220] If the light-emitting device ED is a defective light-emitting device with dark spot defects, then the sub-pixel SP including the light-emitting device ED with dark spot defects can be presented as an abnormal dark spot. If the light-emitting device ED is a defective light-emitting device with bright spot defects, then the sub-pixel SP including the light-emitting device ED with bright spot defects can be presented as an abnormal bright spot.

[0221] If the inspection in step S30 is performed and it is determined that all light-emitting devices ED, including the first light-emitting device ED1, are normal, then step S40 can be performed.

[0222] Reference Figure 11 In the fourth step S40, a first organic layer 570 may be formed around the light-emitting device ED including the first light-emitting device ED1, a second organic layer 580 may be formed on the first organic layer 570, and an upper electrode UE may be formed on the second organic layer 580.

[0223] The upper electrode UE can be electrically connected to the second electrode E2 of each of the light-emitting devices ED, including the first light-emitting device ED1.

[0224] If the inspection in step S30 determines that the first light-emitting device ED1 in the light-emitting device ED is defective, then step S40 can be skipped, and a repair process can be performed. The repair process may include steps S50 through S90.

[0225] Reference Figure 12 In the fifth step S50, a trapping material CM can be applied within the groove GRV of the insulating layer 560, which is designated as a repair site. For example, the trapping material CM may include an organic material such as photopolymer acrylic.

[0226] For example, the height of the upper surface of the capturing material CM can correspond to the height of the upper surface of the insulating layer 560 on which the first light-emitting device ED1 is disposed.

[0227] Reference Figure 13 In the sixth step S60, the second light-emitting device ED2, which replaces the first light-emitting device ED1, can be transferred to the capturing material CM. The transfer in the sixth step S60 can be a secondary transfer for repair.

[0228] For example, the area of ​​the upper surface of the capturing material CM can be greater than or equal to the area (e.g., size) of the first electrode E1 of the second light-emitting device ED2. For example, the area of ​​the upper surface of the capturing material CM can be greater than or equal to the area (e.g., size) of the lower electrode E1a of the first electrode E1 of the second light-emitting device ED2. For example, the size of the groove GRV of the insulating layer 560 can be greater than or equal to the area (or size) of the first electrode of the second light-emitting device ED2.

[0229] Reference Figure 14 In the seventh step S70, a second lower electrode LE2 can be formed. The second lower electrode LE2 can be electrically connected to the first electrode E1 of the second light-emitting device ED2. For example, the second lower electrode LE2 can be electrically connected to the upper surface and side surface of the lower electrode E1a of the first electrode E1 of the second light-emitting device ED2. The second lower electrode LE2 can also be electrically connected to a portion of the side surface of the upper electrode E1b of the first electrode E1 of the second light-emitting device ED2.

[0230] When the second lower electrode metal is deposited to form the second lower electrode LE2, a portion of the second lower electrode metal can be disposed on the first lower electrode LE1 to form the second lower electrode LE2, and the other portion of the second lower electrode metal can be disposed on the first light-emitting device ED1 and the second light-emitting device ED2 to form a metal pattern MP.

[0231] The second lower electrode LE2 and the metal pattern MP can be physically disconnected by undercut structures formed below the second protective film 330 and the first protective film 320 of each of the first light-emitting devices ED1 and ED2. Therefore, electrical short circuits between the first electrode E1 and the second electrode E2 of each of the first light-emitting devices ED1 and ED2 can be prevented.

[0232] Reference Figure 14 If the defect of the first light-emitting device ED1 is a dark spot defect, then the first electrode E1 of the first light-emitting device ED1 can be electrically connected to the first lower electrode LE1 and the second lower electrode LE2. Therefore, if the defect of the first light-emitting device ED1 is a dark spot defect, then in the seventh step S70, there is no need for a cutting process to disconnect the electrical connection between the first electrode E1 of the first light-emitting device ED1 and the first lower electrode LE1 and the second lower electrode LE2.

[0233] However, if the defect of the first light-emitting device ED1 is a bright spot defect, then the first electrode E1 of the first light-emitting device ED1 should not be electrically connected to the first lower electrode LE1 and the second lower electrode LE2. Therefore, if the defect of the first light-emitting device ED1 is a bright spot defect, then in the seventh step S70, a cutting process can be performed to disconnect the electrical connection between the first electrode E1 of the first light-emitting device ED1 and the first lower electrode LE1 and the second lower electrode LE2.

[0234] Reference Figure 15 In step S80, an inspection can be performed to determine whether the second light-emitting device ED2 for secondary transfer is normal or defective. The inspection in step S80 can be a secondary inspection to determine whether the second light-emitting device ED2 for secondary transfer is normal or defective.

[0235] For example, the check in step S80 can be a lighting check to check whether the second light-emitting device ED2, which is used for secondary transfer, can emit light. The lighting check can be performed by applying a first check voltage V1 to the second lower electrode LE2 and a second check voltage V2, different from the first check voltage V1, to the second electrode E2 of the second light-emitting device ED2 to check whether the second light-emitting device ED2 emits light. During the lighting check, the second light-emitting device ED2 that emits light within a set brightness range can be determined as a normal light-emitting device; the second light-emitting device ED2 that does not emit light can be determined as having a dark spot defect; and the second light-emitting device ED2 that emits light at a brightness or light intensity exceeding the set brightness range can be determined as having a bright spot defect.

[0236] Reference Figure 16 If the test results in step S80 determine that the second light-emitting device ED2 is normal, then step S90, which involves forming organic layers 570 and 580 and the upper electrode UE, can be performed.

[0237] Meanwhile, the upper electrode UE formed in the ninth step S90 can be electrically connected to the second electrode E2 of the second light-emitting device ED2 through a metal pattern MP made of the same metal as the second lower electrode LE2.

[0238] Meanwhile, if the inspection in the third step S30 is performed and it is determined that the first light-emitting device ED1 is normal but other light-emitting devices are defective, the second sub-pixel including the defective light-emitting device can be repaired according to the fifth step S50 to the ninth step S90.

[0239] Therefore, if it is determined during the panel manufacturing process that the first light-emitting device ED1 included in the first sub-pixel is normal, but it is determined that the light-emitting device included in the second sub-pixel in other sub-pixels is defective, the second sub-pixel can be repaired. Therefore, in the completed display panel 110, both the first lower electrode LE1 and the second lower electrode LE2 can be connected to the first electrode E1 of the normal first light-emitting device ED1 (see...). Figure 5B ).

[0240] The display device according to the embodiments of this disclosure can be described as follows.

[0241] The display device according to an embodiment of the present disclosure may include: a substrate; an insulating layer disposed on the substrate and having a groove; a first lower electrode disposed on the insulating layer; a first light-emitting device disposed on the insulating layer and including a first electrode and a second electrode; a trapping material disposed inside the groove; a second light-emitting device disposed on the trapping material and including a first electrode and a second electrode; and a second lower electrode disposed on the first lower electrode and connected to the first electrode of the second light-emitting device.

[0242] In a display device according to an embodiment of the present disclosure, the groove in the insulating layer may be a repair site for a second light-emitting device that is transferred during the repair process to replace the defective first light-emitting device as the light-emitting device of the corresponding sub-pixel.

[0243] The first light-emitting device can be a defective light-emitting device that cannot emit normal light, and the second light-emitting device can be a normal light-emitting device that can emit normal light.

[0244] The first electrode of the second light-emitting device can contact the second lower electrode, and the first electrode of the first light-emitting device can contact the first lower electrode. That is, the first electrode of the second light-emitting device can be connected to the second lower electrode, and the first electrode of the first light-emitting device can be connected to the first lower electrode.

[0245] The capturing material can have a thickness corresponding to the depth of the groove. Therefore, the second light-emitting device can be positioned at the same height as the first light-emitting device.

[0246] The capturing material can include a sticky organic material. Therefore, the second light-emitting device can be stably mounted on the capturing material.

[0247] The height of the upper surface of the first light-emitting device from the substrate can correspond to the height of the upper surface of the second light-emitting device from the substrate.

[0248] The display device according to the embodiments of this disclosure may further include: a transistor disposed below an insulating layer; and a connection electrode disposed between the insulating layer and a first lower electrode.

[0249] The connecting electrode can electrically connect the first lower electrode to the source or drain electrode of the transistor through holes in the insulating layer. For example, the connecting electrode can be a reflective electrode. Therefore, the efficiency of light emitted from the second light-emitting device to the front surface of the display panel can be improved.

[0250] The connection point between the electrode and the transistor can be located between the first light-emitting device and the second light-emitting device. Therefore, the second light-emitting device can be driven efficiently according to the repair process.

[0251] In the display device according to the embodiments of the present disclosure, the first light-emitting device and the second light-emitting device may each be a vertical light-emitting diode.

[0252] The display device according to an embodiment of the present disclosure may further include: at least one organic layer surrounding the first light-emitting device and the second light-emitting device; and an upper electrode disposed on the at least one organic layer and connected to the second electrode of the first light-emitting device and the second electrode of the second light-emitting device.

[0253] The first light-emitting device and the second light-emitting device may each include an intermediate layer disposed between the first electrode and the second electrode. The intermediate layer may include: a light-emitting layer; a first semiconductor layer between the first electrode and the light-emitting layer; and a second semiconductor layer between the second electrode and the light-emitting layer.

[0254] The light-emitting layer can be positioned closer to the first semiconductor layer than the second semiconductor layer, or it can be positioned closer to the second semiconductor layer than the first semiconductor layer.

[0255] The first light-emitting device and the second light-emitting device may each include a first protective film surrounding the side surface of the first semiconductor layer and the side surface of the light-emitting layer.

[0256] The first light-emitting device and the second light-emitting device may each include a second protective film surrounding the second semiconductor layer.

[0257] For example, both a first protective film and a second protective film can be provided. In another example, only the first protective film can be provided.

[0258] If both a first protective film and a second protective film are provided, the first protective film and the second protective film can be formed integrally.

[0259] The first electrode of each of the first and second light-emitting devices can have a larger dimension than the dimensions of other parts of each of the first and second light-emitting devices. Therefore, the first light-emitting device can be stably mounted on the insulating layer.

[0260] In addition, the first electrode of the second light-emitting device can have the same size as the second light-emitting device, so that the first electrode of the second light-emitting device can be connected to the second lower electrode more precisely.

[0261] The first electrode of each of the first and second light-emitting devices may include: a lower electrode having a first area; and an upper electrode disposed on the lower electrode and having a second area smaller than the first area. Therefore, the first light-emitting device can be stably mounted on the insulating layer. Furthermore, the lower electrode of the first electrode of the second light-emitting device may have the same size as the second light-emitting device or may have a larger size than other parts of the second light-emitting device, allowing for a more precise connection between the lower electrode of the first electrode of the second light-emitting device and the second lower electrode.

[0262] In the first electrode of the second light-emitting device, the lower electrode can contact the second lower electrode. In the first electrode of the second light-emitting device, the lower electrode can be electrically connected to the second lower electrode.

[0263] The upper surface of the upper electrode of each of the first and second light-emitting devices can have a smaller area than the rear surface of the intermediate layer (e.g., the first semiconductor layer) of each of the first and second light-emitting devices. Therefore, an undercut structure in which the lower part (e.g., the lower part of the first protective film 320) of each of the first and second light-emitting devices is recessed can be formed.

[0264] A metal pattern can also be provided on the second light-emitting device. The metal pattern may contain the same metal as the second lower electrode, and may be physically and electrically spaced apart from or disconnected from the second lower electrode.

[0265] The metal pattern on the second light-emitting device can be disposed between the upper electrode and the second electrode of the second light-emitting device. That is, the rear surface of the metal pattern can be connected to the upper surface of the second electrode of the second light-emitting device, and the upper surface of the metal pattern can be connected to the rear surface of the upper electrode. Therefore, the upper electrode and the second electrode of the second light-emitting device can be electrically connected through the metal pattern on the second light-emitting device.

[0266] The lower electrode of the first electrode and the lower electrode of the upper electrode included in the first electrode of the first light-emitting device can be in contact with the first lower electrode. The lower electrode of the lower electrode and the lower electrode of the upper electrode included in the first electrode of the first light-emitting device can be connected to the first lower electrode.

[0267] If the first light-emitting device has a dark spot defect, the first electrode of the first light-emitting device can be connected to the first lower electrode and the second lower electrode.

[0268] If the first light-emitting device has a bright spot defect, the first electrode of the first light-emitting device can be disconnected from the first lower electrode and the second lower electrode. This can be the result of a cutting process during the repair process.

[0269] The display device according to an embodiment of the present disclosure may include: a substrate; an insulating layer disposed on the substrate and having a groove; a first lower electrode disposed on the insulating layer; a first light-emitting device disposed on the insulating layer and including a first electrode and a second electrode; at least one organic layer disposed around the first light-emitting device and filling the interior of the groove; and an upper electrode disposed on at least one organic layer.

[0270] According to an embodiment of this disclosure, the groove in the insulating layer can be a repair site for a second light-emitting device that is transferred during the repair process to replace the first light-emitting device as the light-emitting device of the corresponding sub-pixel.

[0271] The first electrode of the first light-emitting device can be connected to the first lower electrode.

[0272] The second electrode of the first light-emitting device can be connected to the upper electrode.

[0273] The size of the first electrode of the first light-emitting device can be equal to or larger than the size of other parts of the first light-emitting device. Therefore, the first light-emitting device can be stably mounted on the insulating layer.

[0274] The light-emitting device according to the embodiments of this disclosure may have a side-contact structure.

[0275] The light-emitting device according to embodiments of this disclosure may include: a first electrode; a first semiconductor layer on the first electrode; a light-emitting layer on the first semiconductor layer; a second semiconductor layer on the light-emitting layer; and a second electrode on the second semiconductor layer. The first electrode may include: a lower electrode having a first area; and an upper electrode disposed on the lower electrode and having a second area smaller than the first area.

[0276] The height of the upper electrode can be greater than the height of the lower electrode.

[0277] The upper surface of the upper electrode can have a smaller area than the rear surface of the first semiconductor layer.

[0278] Even if the first light-emitting device is functioning correctly, the display panel can still include a second lower electrode disposed on the first lower electrode if other sub-pixels are repaired during panel manufacturing. That is, the first electrode of a functioning first light-emitting device can be connected to both the first and second lower electrodes. In other words, even if one of all the light-emitting devices disposed on the display panel is defective, a second lower electrode can be disposed on the first lower electrode.

[0279] According to the embodiments of the present disclosure described above, a display device with the following structure can be provided: even if a defect occurs in the light-emitting device disposed on the display panel, the structure can easily repair the sub-pixels including the defective light-emitting device.

[0280] According to embodiments of this disclosure, a display device with the following structure can be provided: even if a defect occurs in the light-emitting device disposed on the display panel, the structure can repair both the dark spot defect and the bright spot defect of the light-emitting device.

[0281] According to embodiments of this disclosure, a light-emitting device can be provided having an electrode structure (e.g., the structure of a first electrode) that allows for easy repair processes.

[0282] According to embodiments of this disclosure, a light-emitting device can be provided having a structure capable of contacting the side of an electrode (e.g., a first lower electrode or a second lower electrode) on a display panel.

[0283] According to embodiments of this disclosure, process optimization can be achieved by effectively repairing sub-pixels, including defective light-emitting devices, without significantly altering the panel structure.

[0284] Furthermore, according to the embodiments of this disclosure, since there is no need to use redundant structures to additionally transfer expensive light-emitting devices to prepare for defective light-emitting devices, the size and weight of the display panel can be reduced, the design of the display panel can be simplified, and the product price can be significantly reduced.

[0285] The display device according to embodiments of this disclosure may be included in a wide variety of devices or electronic devices. For example, a wide variety of electronic devices may include wearable devices such as smartwatches, mobile devices, laptops, and monitors or TVs.

[0286] The above description has been presented to enable any person skilled in the art to understand and use the technical concept of the invention, and is provided in the context of a particular application and its requirements. Various modifications, additions, and substitutions to the described embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of the invention. The above description and drawings provide examples of the technical concept of the invention for illustrative purposes only. That is, the disclosed embodiments are intended to illustrate the scope of the technical concept of the invention.

Claims

1. A display device, comprising: substrate; An insulating layer on the substrate, the insulating layer having grooves; The first lower electrode on the insulating layer; A first light-emitting device on the insulating layer, the first light-emitting device comprising a first electrode and a second electrode; The material trapped inside the groove; A second light-emitting device on the capturing material, the second light-emitting device comprising a first electrode and a second electrode; as well as A second lower electrode is located on the first lower electrode, and the second lower electrode is connected to the first electrode of the second light-emitting device.

2. The display device according to claim 1, wherein the first light-emitting device is a defective light-emitting device that cannot emit normal light, and the second light-emitting device is a normal light-emitting device that can emit normal light.

3. The display device according to claim 1, wherein the first electrode of the second light-emitting device is connected to the second lower electrode, and the first electrode of the first light-emitting device is connected to the first lower electrode.

4. The display device according to claim 1, wherein the capturing material has adhesiveness and a thickness corresponding to the depth of the groove.

5. The display device according to claim 1, further comprising: The transistor beneath the insulating layer; as well as A connection electrode is provided between the insulating layer and the first lower electrode, which electrically connects the first lower electrode to the source or drain electrode of the transistor through a hole in the insulating layer. The connection point between the connecting electrode and the transistor is located between the first light-emitting device and the second light-emitting device.

6. The display device according to claim 1, further comprising: At least one organic layer surrounding the first light-emitting device and the second light-emitting device; as well as An upper electrode is disposed on the at least one organic layer, and the upper electrode is connected to the second electrode of the first light-emitting device and the second electrode of the second light-emitting device.

7. The display device according to claim 6, further comprising a metal pattern between the second electrode of the second light-emitting device and the upper electrode. The metal pattern therein contains the same metal as the second lower electrode.

8. The display device according to claim 6, wherein the first light-emitting device and the second light-emitting device each include an intermediate layer between the first electrode and the second electrode. The intermediate layer includes: Emissive layer; A first semiconductor layer between the first electrode and the light-emitting layer; as well as A second semiconductor layer between the second electrode and the light-emitting layer. The light-emitting layer is configured to be closer to the first electrode than the second electrode, or closer to the second electrode than the first electrode.

9. The display device according to claim 8, wherein the first light-emitting device and the second light-emitting device each further include a first protective film surrounding the side surface of the first semiconductor layer and the side surface of the light-emitting layer.

10. The display device according to claim 9, wherein the first light-emitting device and the second light-emitting device each further include a second protective film surrounding the second semiconductor layer.

11. The display device according to claim 10, wherein the first protective film is disposed on a first side of the intermediate layer. The second protective film is disposed on the second side of the intermediate layer. The first protective film and the second protective film protrude outwards while in contact with each other at the boundary between the first side and the second side.

12. The display device according to claim 1, wherein the size of the first electrode of each of the first light-emitting device and the second light-emitting device is equal to the size of each of the first light-emitting device and the second light-emitting device.

13. The display device according to claim 1, wherein the first electrode of each of the first light-emitting device and the second light-emitting device comprises: A lower electrode having a first area; as well as The upper electrode on the lower electrode has a second area smaller than the first area.

14. The display device according to claim 13, wherein, In the first electrode of the second light-emitting device, the lower electrode is connected to the second lower electrode.

15. The display device according to claim 13, wherein, In the first electrode of the first light-emitting device, the lower electrode is connected to the first lower electrode.

16. The display device according to claim 1, wherein the first electrode of the first light-emitting device is connected to the first lower electrode and the second lower electrode.

17. The display device according to claim 1, wherein the first electrode of the first light-emitting device is disconnected from the first lower electrode and the second lower electrode.

18. A light-emitting device, comprising: First electrode; A first semiconductor layer on the first electrode; A light-emitting layer on the first semiconductor layer; A second semiconductor layer on the light-emitting layer; as well as The second electrode on the second semiconductor layer The first electrode includes: A lower electrode having a first area; as well as The upper electrode on the lower electrode has a second area smaller than the first area.

19. The light-emitting device according to claim 18, wherein the height of the upper electrode is greater than the height of the lower electrode.

20. The light-emitting device according to claim 18, wherein the upper surface of the upper electrode has an area smaller than the rear surface of the first semiconductor layer.

Images