Wafer high-low temperature testing device and method

Abstract

This invention relates to the field of semiconductor manufacturing technology, and more particularly to a wafer high and low temperature testing device and method. The device includes a temperature control stage, on which a thermally conductive support surface and multiple vertically arranged vacuum channels are provided. A piston is slidably and sealed within each vacuum channel. A return spring is provided at the bottom of the piston, and a flexible suction cup is provided at the top. A connecting hole is provided on the piston to connect the flexible suction cup and the vacuum channel. A ranging camera is used to measure the Z-axis height of multiple feature points on the wafer surface after adsorption and fixation. A control component is used to receive the measured height data and control the Z-axis slide to perform height compensation when the test probe is stuck. This invention uses a piston and spring linkage structure to make the warped wafer after adsorption adhere to the thermally conductive support surface, and cooperates with the ranging camera and Z-axis slide for height compensation, so as to solve the problem of inconsistent probe contact caused by poor wafer fixation and adhesion in existing testing devices.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer high and low temperature testing device and method. Background Technology

[0002] High and low temperature testing of wafers is a critical step in the semiconductor manufacturing process. High and low temperature testing equipment is used to verify the functionality, performance, and reliability of chips under extreme temperature environments. During testing, the wafer is placed on a temperature-controlled stage, fixed by vacuum adsorption, and heated or cooled to the target test temperature by the stage. Subsequently, probe cards perform electrical tests.

[0003] Currently, discrete device wafers typically require back-side thinning before packaging to facilitate chip heat dissipation and subsequent packaging processes. After thinning, the wafer loses the support of its original substrate structure. Under the combined effects of multiple stresses—material growth thermal stress, front-side film stress, and damage stress from thinning—the wafer's structure undergoes slight deformation, with the center concave and the edges warping. This wafer warping phenomenon is disclosed in a current technical solution for a wafer carrier device and prober (authorization announcement number: CN219226260U). For example... Figure 9 As shown, warping results in a height difference d between the central region and the edge region of the wafer.

[0004] During vacuum adsorption, the thermally conductive support surface of the existing temperature control stage does not adhere well to the back of the wafer, resulting in a significant height difference after the wafer is fixed. This height difference causes inconsistent contact between the probe at the high and low points of the wafer, affecting the accuracy and stability of electrical testing of the lower-level chips. More seriously, the probe is prone to piercing the contact surface at the high points, damaging the wafer. Summary of the Invention

[0005] In view of this, the present invention proposes a wafer high and low temperature testing device and method, which uses a piston and spring linkage structure to make the adsorbed warped wafer fit against the thermally conductive support surface, and uses a ranging camera and Z-axis slide for height compensation to solve the problem of inconsistent probe contact caused by poor wafer fixation in existing testing devices.

[0006] The technical solution of this invention is implemented as follows: On one hand, the present invention provides a wafer high and low temperature testing device, including a temperature control stage, a control component and a Z-axis slide stage disposed on the temperature control stage, wherein a ranging camera and a test probe card are provided on the output end of the Z-axis slide stage, wherein... The temperature control platform is provided with a heat-conducting support surface and multiple vertically arranged vacuum channels, and a piston is slidably and sealed in each vacuum channel; The piston is provided with a return spring at the bottom and a flexible suction cup at the top. The piston is provided with a communication hole for connecting the flexible suction cup and the vacuum channel. The ranging camera is used to measure the Z-axis height of multiple feature points on the wafer surface after adsorption and fixation. The control component is used to receive the measured height data and control the Z-axis slide to perform height compensation when the test probe is stuck.

[0007] Based on the above technical solutions, preferably, a medium circulation channel is provided inside the temperature control platform and at a position corresponding to the lower part of the heat-conducting support surface.

[0008] Based on the above technical solutions, preferably, the temperature control console has an air chamber inside, wherein... The lower ends of multiple vacuum channels are connected to the gas cavity; A suction pipe is connected to the side of the air chamber.

[0009] Based on the above technical solutions, preferably, multiple vacuum holes are provided at circumferential intervals at the edge of the thermally conductive support surface.

[0010] Based on the above technical solution, preferably, an X-axis slide is fixed on the temperature control platform, a support frame is fixed on the output end of the X-axis slide, and a Y-axis slide is fixed on the support frame. The output end of the Y-axis slide is fixedly connected to the Z-axis slide.

[0011] Based on the above technical solutions, preferably, the multiple vacuum channels are distributed in a multi-layered concentric circle shape within the edge contour range of the heat-conducting support surface.

[0012] Based on the above technical solutions, preferably, the flexible suction cup includes a suction cup portion and a telescopic portion, wherein, The telescopic part is a vertically arranged elastic hollow tube structure, with its lower end fixedly connected to the piston and communicating with the connecting hole, and its upper end fixedly connected to the suction cup part and communicating with the inner cavity of the suction cup part.

[0013] Based on the above technical solutions, preferably, an elastic frame is coaxially arranged inside the telescopic part, wherein... The elastic skeleton is in the shape of a helical spring, and its lower end is fixedly connected to the piston.

[0014] Based on the above technical solutions, preferably, the top of the vacuum channel is provided with a settling groove, wherein... The interior of the settling tank is equipped with a movable block that can slide horizontally. The top of the movable block is provided with a shaping hole, the shape of which matches the shape of the bottom of the suction cup part; The bottom of the shaping hole is provided with a through hole for the telescopic part to pass through; Both the movable block and the suction cup are thermally conductive.

[0015] On the other hand, the present invention also provides a wafer high and low temperature testing method, applied to the above-mentioned wafer high and low temperature testing device, comprising the following steps: S1. Place the wafer on the flexible suction cup and use an external vacuum device to evacuate the vacuum. During the process, the flexible suction cup adsorbs the back of the wafer and overcomes the elastic force of the return spring to drive the piston to move downward, so that the back of the wafer is in close contact with the thermally conductive support surface, thus completing the wafer fixation. S2. The wafer is heated or cooled to the target test temperature using the temperature control station; S3. The Z-axis height of multiple feature points on the fixed wafer surface is measured by the ranging camera. The control component receives the measured height data and controls the Z-axis slide to perform height compensation when the test probe is stuck.

[0016] The wafer high and low temperature testing device and method of the present invention have the following advantages over the prior art: (1) By setting up a piston that can slide up and down, a return spring and a flexible suction cup, the back of the wafer is pressed tightly against the thermally conductive support surface of the temperature control stage during vacuuming, which effectively eliminates the height difference caused by wafer warping and improves the fit and stability of wafer fixation. At the same time, the Z-axis height of multiple feature points on the wafer surface after fixation is measured by a range camera, and the Z-axis slide is controlled by the control component to perform height compensation when the probe is inserted, which solves the problem of inconsistent probe contact caused by wafer warping, avoids the risk of probe puncturing the wafer, and significantly improves the accuracy and reliability of high and low temperature testing.

[0017] (2) By setting multiple vacuum holes at circumferential intervals at the edge of the thermally conductive support surface, it is easy to open after the flexible suction cup completes the main adsorption, which enhances the adsorption force on the edge area of ​​the wafer, effectively suppresses the warping of the wafer edge, further improves the stability of wafer fixation, and is used for secondary bonding correction after wafer fixation to improve the accuracy of height control.

[0018] (3) By setting up an X-axis slide, a support frame and a Y-axis slide, and fixing the output end of the Y-axis slide to the Z-axis slide, the range camera and test probe can move arbitrarily in the horizontal plane, which facilitates multi-point height measurement and pin piercing test of different wafer areas, and improves the flexibility and coverage of the test.

[0019] (4) By setting the flexible chuck as a chuck part and a telescopic part, and the telescopic part is an elastic hollow tube structure, the telescopic part can elastically stretch and flex to deform according to the warped shape of the back of the wafer during the vacuuming process. When the warped wafer is attached to the thermal support surface, the micro-deformation of the back of the wafer will cause the chuck part to shift in position. The telescopic part adapts to change its posture through elastic flexing, so that the chuck part always maintains the best contact angle with the back of the wafer, avoiding the hard pulling caused by rigid connection, preventing wafer damage, and improving the adaptability to wafers with different degrees of warping.

[0020] (5) By setting a sink at the top of the vacuum channel and setting a movable block with a shaping hole in the sink, the movable block can be adaptively adjusted to follow the horizontal displacement caused by the wafer warping of the flexible chuck, ensuring that the shaping hole is always well aligned with the chuck part, avoiding jamming or sealing failure caused by rigid interference; at the same time, the chuck part is constrained by the shaping hole to expand radially during the sinking process, maintaining the shape stability of the chuck part and improving the adsorption effect.

[0021] (6) By setting a spiral spring-shaped elastic skeleton coaxially inside the telescopic part, the tensile strength of the telescopic part is significantly enhanced, the service life of the flexible suction cup is extended, and the reliability and stability of the device in long-term high and low temperature tests are guaranteed, while ensuring the normal elastic flex of the telescopic part and the unobstructed internal air passage.

[0022] (7) By setting both the movable block and the suction cup to be thermally conductive, the thermal void effect in the sink area is reduced, thus ensuring the temperature uniformity of the wafer surface. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a front view of a wafer high and low temperature testing device according to the present invention; Figure 2 This is a side view of a wafer high and low temperature testing device according to the present invention; Figure 3 This is a diagram showing the internal structure of the temperature control console; Figure 4 This is a top view of the temperature control panel; Figure 5 for Figure 4 Sectional view along axis AA; Figure 6 for Figure 5 Enlarged view of point A; Figure 7 for Figure 6 A partial structural diagram; Figure 8 This is a schematic diagram of the connection structure between the elastic skeleton and the flexible suction cup. Figure 9 This is a schematic diagram of the structure of an existing warped wafer; In the diagram: 1. Temperature control table; 2. Control component; 3. Z-axis slide; 4. Rangefinder camera; 5. Test probe card; 11. Piston; 12. Return spring; 13. Flexible suction cup; 15. X-axis slide; 16. Support frame; 17. Y-axis slide; 18. Movable block; 101. Heat-conducting support surface; 102. Vacuum channel; 103. Medium circulation channel; 104. Gas chamber; 131. Suction cup part; 132. Telescopic part; 133. Elastic skeleton; 1011. Vacuum hole; 1021. Settling tank; 1101. Connecting hole; 1801. Shaping hole; 1802. Through hole. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0026] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0027] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention.

[0028] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0029] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0030] The following disclosure provides numerous different embodiments or examples for implementing various structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples. Such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. Additionally, examples of various specific processes and materials are provided in this invention; however, those skilled in the art will recognize the applicability of other processes and / or the use of other materials.

[0031] like Figure 1-8 As shown, a wafer high and low temperature testing device of the present invention includes a temperature control stage 1, a control component 2 and a Z-axis slide 3 disposed on the temperature control stage 1, and a distance measuring camera 4 and a test probe card 5 disposed on the output end of the Z-axis slide 3.

[0032] The temperature control station 1 is used to support and regulate the wafer temperature. It is equipped with a thermally conductive support surface 101 and multiple vertically arranged vacuum channels 102. The thermally conductive support surface 101 is a flat, rigid thermally conductive surface, which is used to directly contact the back side of the wafer after it is adsorbed, so as to achieve efficient heat conduction.

[0033] To achieve temperature control, a medium circulation channel 103 is provided inside the temperature control station 1 and below the corresponding thermally conductive support surface 101. By circulating a heating or cooling medium (such as heat transfer oil, cooling water, or gas) into the medium circulation channel 103, the temperature of the temperature control station 1 can be adjusted, thereby enabling the wafer to quickly reach the target test temperature.

[0034] A piston 11 is slidably and sealed within each vacuum channel 102, forming a piston movement structure. A return spring 12 is located at the bottom of the piston 11, and a flexible suction cup 13 is located at the top. A connecting hole 1101 is provided on the piston 11 to connect the flexible suction cup 13 to the vacuum channel 102.

[0035] During vacuuming, external vacuum equipment evacuates air through vacuum channel 102. The airflow acts on flexible chuck 13 through connecting hole 1101, causing chuck 13 to adhere to the back side of the wafer. As the vacuum level increases, the adsorption force overcomes the elasticity of return spring 12, driving piston 11 to move downwards, ultimately bringing the back side of the wafer tightly against the thermally conductive support surface 101 of temperature control station 1. This process effectively eliminates height differences caused by wafer warpage, improving the fit and stability of wafer fixation. After the vacuum is broken, return spring 12 pushes piston 11 upwards to reset, and flexible chuck 13 extends out of thermally conductive support surface 101 again, facilitating wafer loading and unloading.

[0036] To simplify the vacuum piping and improve the adsorption consistency of each adsorption unit, a gas chamber 104 is provided inside the temperature control station 1. The lower ends of multiple vacuum channels 102 are connected to the gas chamber 104, and suction pipes are connected to the sides of the gas chamber 104, which are connected to an external vacuum generator. When the vacuum generator is working, a negative pressure is formed inside the gas chamber 104, and adsorption force is applied to each flexible suction cup 13 simultaneously through each vacuum channel 102.

[0037] To further suppress wafer edge warping, multiple vacuum holes 1011 are spaced circumferentially along the edge of the thermally conductive support surface 101. These vacuum holes 1011 are individually connected to another vacuum device. After the flexible chuck 13 completes vacuum adsorption, these vacuum holes 1011 directly generate adsorption force on the edge region of the back side of the wafer, working in synergy with the adsorption effect of the flexible chuck 13 to enhance the fixing effect on the wafer edge. Especially for wafers with a large degree of warping, the edge vacuum holes 1011 can effectively pull down the wafer edge, making it tightly adhere to the thermally conductive support surface 101, thereby further improving the stability of wafer fixing.

[0038] Furthermore, multiple vacuum channels 102 are distributed in a multi-layered concentric circle pattern within the edge contour of the thermally conductive support surface 101. For example, three concentric rings can be arranged, with 8 to 12 vacuum channels 102 evenly distributed in each ring. This layout allows the flexible chuck 13 to form uniformly distributed adsorption points on the back of the wafer, avoiding wafer deformation due to excessive local adsorption force, while ensuring that all areas of the warped wafer can be effectively adsorbed, thus improving the overall bonding effect.

[0039] In this embodiment, the Z-axis slide 3 is used to drive the ranging camera 4 and the test probe card 5 to move along the Z-axis direction. Further, an X-axis slide 15 is fixed on the temperature control station 1, a support frame 16 is fixed to the output end of the X-axis slide 15, and a Y-axis slide 17 is fixed on the support frame 16. The output end of the Y-axis slide 17 is fixedly connected to the Z-axis slide 3. Through the coordinated movement of the X-axis slide 15 and the Y-axis slide 17, the ranging camera 4 and the test probe card 5 can move arbitrarily in the horizontal plane, facilitating multi-point Z-axis height measurement and pin insertion testing of different wafer regions. The Z-axis slide 3 is responsible for the vertical compensation movement during pin insertion. All slides are electrically driven linear modules used to drive the linear movement of the target. This structure improves the flexibility and coverage of the test.

[0040] In the above structure, the flexible suction cup 13 includes a suction cup part 131 and a telescopic part 132. The telescopic part 132 is a vertically arranged elastic hollow tube structure (such as a corrugated tube or smooth tube made of silicone rubber or fluororubber), with the lower end fixedly connected to the piston 11 and communicating with the connecting hole 1101, and the upper end fixedly connected to the suction cup part 131 and communicating with the inner cavity of the suction cup part 131.

[0041] During the vacuuming process, the telescopic part 132 can elastically expand, contract, and flex to adapt to the warped shape of the wafer's back side. When the warped wafer is adhered to the heat-conducting support surface 101 under the action of adsorption force, the slight deformation of the wafer's back side causes the position of the suction cup part 131 to shift. At this time, the telescopic part 132 adaptively changes its posture through its elastic flexural ability, ensuring that the suction cup part 131 always maintains the optimal contact angle and position with the wafer's back side, avoiding the forced pulling caused by rigid connections. This structure ensures the effective transmission of adsorption force, avoids additional mechanical stress on the wafer or flexible suction cup 13, prevents damage to the wafer during the bonding process, and improves the adaptability to wafers with different degrees of warping.

[0042] To further improve the durability of the telescopic part 132, a retractable and flexible elastic frame 133 is coaxially arranged inside the telescopic part 132. The elastic frame 133 is in the shape of a helical spring, and its lower end is fixedly connected to the piston 11. The elastic frame 133 can be made of stainless steel wire, nickel-titanium alloy wire, or high-elasticity polymer material. Under the premise of ensuring normal elastic flexural deformation of the telescopic part 132 and unobstructed internal air passage, the elastic frame 133 significantly enhances the tensile strength of the telescopic part 132, preventing the telescopic part 132 from plastic deformation or breakage due to excessive stretching during repeated vacuuming and resetting processes. This effectively extends the overall service life of the flexible suction cup 13 and ensures the reliability and stability of the device in long-term high and low temperature tests.

[0043] Based on the above structure, a recess 1021 is provided at the top of the vacuum channel 102. A movable block 18 is horizontally slidable inside the recess 1021. A shaping hole 1801 is provided at the top of the movable block 18, and the shape of the shaping hole 1801 matches the shape of the bottom of the suction cup part 131. A through hole 1802 is provided at the bottom of the shaping hole 1801 for the telescopic part 132 to pass through.

[0044] The movable block 18 can slide freely in the horizontal direction within the sink 1021, thereby adaptively adjusting to the horizontal displacement of the flexible chuck 13 caused by wafer warping or mounting deviations. This ensures that the shaping hole 1801 remains well aligned with the chuck portion 131, avoiding jamming or sealing failure caused by rigid interference. During the downward pulling of the chuck portion 131 by the piston 11, the wall of the shaping hole 1801 applies radial constraint to the bottom of the chuck portion 131, preventing excessive radial expansion of the chuck portion 131 during axial stretching. This maintains the shape stability of the chuck portion 131 and improves the adsorption effect.

[0045] Furthermore, both the movable block 18 and the suction cup portion 131 are thermally conductive. The movable block 18 can be made of a thermally conductive metal (such as copper, aluminum, or stainless steel) or a high thermally conductive ceramic (such as aluminum nitride), and the suction cup portion 131 can be made of an elastic material doped with high thermally conductive fillers (such as boron nitride or aluminum oxide). After being closely attached to the thermally conductive support surface 101 on the back side of the wafer, the movable block 18 and the suction cup portion 131 can serve as auxiliary heat conduction paths to conduct the heat from the temperature control station 1 to the back side of the wafer, reducing the thermal void effect caused by the presence of the movable block 18 and the suction cup portion 131 in the sink 1021 area, and improving the temperature uniformity of the wafer surface.

[0046] In the above structure, control component 2 employs a programmable logic controller (PLC) to receive data and issue control commands. A PLC is a digital computing and operating electronic system specifically designed for industrial environments, possessing high reliability, strong anti-interference capabilities, and fast instruction processing capabilities, and is widely used in semiconductor manufacturing and testing. In this device, the PLC communicates with the host computer, ranging camera 4, Z-axis slide 3, and various sensors via an industrial fieldbus, receiving height measurement data in real time and controlling the Z-axis slide 3 to perform needle height compensation. Height compensation can be achieved using a flatness compensation method for a high and low temperature testing worktable (CN112578267B) in the prior art, the details of which will not be elaborated upon.

[0047] This embodiment also provides a wafer high and low temperature testing method, which uses the above-mentioned wafer high and low temperature testing device and includes the following steps: S1. Place the wafer on the flexible chuck 13 and activate the external vacuum equipment to evacuate the wafer. During this process, the flexible chuck 13 adheres to the back of the wafer and overcomes the elastic force of the return spring 12 to move the piston 11 downward, making the back of the wafer tightly adhere to the thermally conductive support surface 101, thus completing the wafer fixation. This step eliminates the height difference caused by warping through physical bonding.

[0048] S2. The wafer is heated or cooled to the target test temperature, such as -40℃ to 150℃, using the temperature control station 1. The dielectric circulates within the dielectric circulation channel 103 to ensure temperature uniformity.

[0049] S3. Measure the Z-axis height of multiple feature points (such as 9 or 25 points divided according to the map) on the wafer surface after adsorption and fixation using a ranging camera 4. During measurement, the ranging camera 4 is moved sequentially to directly above each feature point using the X-axis slide 15 and Y-axis slide 17, and the Z-axis height value of that point is obtained using the ranging camera 4. The control component 2 receives the measured height data in real time, calculates the height difference between other feature points based on the central feature point, and precisely controls the Z-axis slide 3 to perform height compensation when the test probe card 5 is inserted, ensuring that the probe performs electrical testing with a consistent contact force at each test point.

[0050] In step S1, after the wafer is fixed, a secondary bonding correction step can be performed: the vacuum hole 1011 is kept in the adsorption state, the vacuum of the vacuum channel 102 is closed, and the flexible chuck 13 is temporarily released. The wafer rebounds slightly under its own elastic recovery stress, but the rebound amplitude is limited because the edge is still adsorbed and fixed by the vacuum hole 1011. After a predetermined interval (e.g., 0.5 to 2 seconds), the vacuum of the vacuum channel 102 is reopened, the flexible chuck 13 adsorbs the back of the wafer again and drives the piston 11 to move downward, so that the wafer is re-bonded to the thermally conductive support surface 101 in a state of lower internal stress.

[0051] This secondary correction step releases the internal elastic stress accumulated during the initial bonding process of the wafer, further improving the bonding uniformity between the wafer and the thermally conductive support surface 101. Repeating the correction step multiple times can further improve the bonding uniformity between the wafer and the thermally conductive support surface 101, which is beneficial for improving the accuracy of height control.

[0052] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A wafer high and low temperature testing device, characterized in that: It includes a temperature control platform (1), a control component (2) and a Z-axis slide (3) mounted on the temperature control platform (1), wherein a rangefinder camera (4) and a test probe card (5) are mounted on the output end of the Z-axis slide (3), wherein, The temperature control panel (1) is provided with a heat-conducting support surface (101) and a plurality of vertically arranged vacuum channels (102), and a piston (11) is slidably and sealed in each vacuum channel (102). The piston (11) is provided with a return spring (12) at the bottom and a flexible suction cup (13) at the top. The piston (11) is provided with a connecting hole (1101) for connecting the flexible suction cup (13) and the vacuum channel (102). The ranging camera (4) is used to measure the Z-axis height of multiple feature points on the wafer surface after adsorption and fixation. The control component (2) is used to receive the measured height data and control the Z-axis slide (3) to perform height compensation when the test probe card (5) is inserted.

2. The wafer high and low temperature testing device as described in claim 1, characterized in that: The temperature control console (1) is provided with a medium circulation channel (103) inside and at a position corresponding to the lower part of the heat-conducting support surface (101).

3. The wafer high and low temperature testing device as described in claim 1, characterized in that: The temperature control console (1) has an air chamber (104) inside, wherein, The lower ends of the multiple vacuum channels (102) are connected to the gas chamber (104); The air chamber (104) is connected to a suction pipe on its side.

4. The wafer high and low temperature testing device as described in claim 1, characterized in that: Multiple vacuum holes (1011) are provided at circumferential intervals at the edge of the thermally conductive support surface (101).

5. The wafer high and low temperature testing device as described in claim 1, characterized in that: An X-axis slide (15) is fixed on the temperature control console (1), a support frame (16) is fixed on the output end of the X-axis slide (15), and a Y-axis slide (17) is fixed on the support frame (16). The output end of the Y-axis slide (17) is fixedly connected to the Z-axis slide (3).

6. The wafer high and low temperature testing device as described in claim 1, characterized in that: Multiple vacuum channels (102) are distributed in a multi-layered concentric circle shape within the edge contour of the thermally conductive support surface (101).

7. The wafer high and low temperature testing device as described in claim 1, characterized in that: The flexible suction cup (13) includes a suction cup portion (131) and a telescopic portion (132), wherein, The telescopic part (132) is a vertically arranged elastic hollow tube structure. Its lower end is fixedly connected to the piston (11) and communicates with the connecting hole (1101). Its upper end is fixedly connected to the suction cup part (131) and communicates with the inner cavity of the suction cup part (131).

8. The wafer high and low temperature testing device as described in claim 7, characterized in that: The telescopic part (132) is coaxially provided with an elastic frame (133) inside, wherein, The elastic skeleton (133) is in the shape of a helical spring, and its lower end is fixedly connected to the piston (11).

9. The wafer high and low temperature testing device as described in claim 7, characterized in that: The top of the vacuum channel (102) is provided with a settling groove (1021), wherein, The interior of the settling tank (1021) is provided with a movable block (18) that can slide horizontally. The top of the movable block (18) is provided with a shaping hole (1801), the shape of which matches the shape of the bottom of the suction cup part (131); The bottom of the shaping hole (1801) is provided with a through hole (1802) through which the telescopic part (132) passes. Both the movable block (18) and the suction cup (131) are thermally conductive.

10. A wafer high and low temperature testing method, applied to the wafer high and low temperature testing apparatus as described in any one of claims 1-9, characterized in that: Includes the following steps: S1. Place the wafer on the flexible suction cup (13) and use an external vacuum device to evacuate the vacuum. During the process, the flexible suction cup (13) adsorbs the back of the wafer and overcomes the elastic force of the return spring (12) to drive the piston (11) to move downward, so that the back of the wafer is in close contact with the heat-conducting support surface (101) to complete the wafer fixing. S2. The wafer is heated or cooled to the target test temperature using the temperature control station (1); S3. The Z-axis height of multiple feature points on the fixed wafer surface is measured by the ranging camera (4). The control component (2) receives the measured height data and controls the Z-axis slide (3) to perform height compensation when the test probe card (5) is inserted.

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