Semiconductor device

Abstract

The present application provides a semiconductor device that suppresses temperature rise of a heat generating component. The semiconductor device (10) includes: a substrate (15); a semiconductor element (21, 22, 23, 24) connected to a substrate surface (150); a P terminal (61) connected to the substrate (15) and having conductivity; and a resistance element (750) connected to the substrate (15) and generating heat by current flow; when the resistance element (750) is projected in a thickness direction (DT) of the substrate (15), the projected resistance element (750) overlaps the P terminal (61). Thus, a semiconductor device that suppresses temperature rise of a heat generating component can be provided.

Description

Technical Field

[0001] This disclosure relates to semiconductor devices. Background Technology

[0002] Conventionally, as described in Patent Document 1, semiconductor devices comprising a printed circuit board, a semiconductor chip, an interposer, and a buffer circuit are known. The semiconductor chip is connected to the printed circuit board via the interposer. The buffer circuit is disposed on the surface of the printed circuit board opposite to the semiconductor chip.

[0003] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2023-183026 Summary of the Invention

[0004] In the semiconductor device described in Patent Document 1, heat-generating components such as the semiconductor chip and buffer circuits generate heat during operation. The heat generated by the semiconductor chip is greater than that generated by the heat-generating components. Furthermore, when the heat-generating components are projected along the thickness direction of the printed circuit board, the projected heat-generating components overlap with the semiconductor chip. As a result, the heat generated by the semiconductor chip is easily conducted to the heat-generating components through the interposer and the printed circuit board. Consequently, the temperature of the heat-generating components easily rises, thereby increasing the thermal stress applied to the heat-generating components. Therefore, in the semiconductor device described in Patent Document 1, heat-generating components such as buffer circuits are prone to damage.

[0005] The purpose of this disclosure is to provide a semiconductor device for suppressing the temperature rise of a heat-generating component.

[0006] According to one aspect of this disclosure, a semiconductor device includes: a substrate; a semiconductor element connected to the surface of the substrate; a terminal connected to the substrate and having conductivity; and a heating element connected to the substrate and heated by the flow of current, wherein when the heating element is projected along the thickness direction of the substrate, the projected heating element overlaps with the terminal.

[0007] According to another aspect of this disclosure, a semiconductor device includes: a substrate; a semiconductor element connected to the surface of the substrate; a heat dissipation member connected to the side of the semiconductor element opposite to the substrate and extending in a direction orthogonal to the thickness direction of the substrate; and a heat-generating member connected to the back side of the substrate and heated by the flow of current, wherein when the heat-generating member is projected along the thickness direction, the projected heat-generating member overlaps with the heat dissipation member.

[0008] According to another aspect of this disclosure, a semiconductor device includes: a substrate; a semiconductor element connected to a surface of the substrate; a terminal connected to the surface and having conductivity; and a heating element connected to the surface and heated by the flow of current, wherein the distance from the heating element to the terminal in a direction orthogonal to the thickness direction of the substrate is shorter than the distance from the heating element to the semiconductor element in a direction orthogonal to the thickness direction.

[0009] Therefore, the heat generated by the heat-generating component is easily conducted to the terminals. Consequently, the heat generated by the heat-generating component is easily dissipated. Furthermore, the heat generated by the semiconductor element is difficult to conduct to the heat-generating component. Therefore, the temperature rise of the heat-generating component is suppressed. Attached Figure Description

[0010] Figure 1 This is a top view of the semiconductor device according to the first embodiment.

[0011] Figure 2 yes Figure 1 Sectional view along line II-II.

[0012] Figure 3 yes Figure 1 Sectional view along line III-III.

[0013] Figure 4 It is a circuit diagram of a semiconductor device.

[0014] Figure 5 This is a cross-sectional view of the semiconductor device of Comparative Example 1.

[0015] Figure 6 This is a graph showing the temperature distribution of the semiconductor device in Comparative Example 1.

[0016] Figure 7 This is a graph showing the temperature of the resistive element in the semiconductor device of Comparative Example 1 and the first embodiment.

[0017] Figure 8 This is a diagram showing the temperature distribution of the semiconductor device according to the first embodiment.

[0018] Figure 9 This is a cross-sectional view of the semiconductor device in Comparative Example 2.

[0019] Figure 10 This is a top view of the semiconductor device according to the second embodiment.

[0020] Figure 11 yes Figure 10 Sectional view along line XI-XI.

[0021] Figure 12 yes Figure 10 Sectional view along line XII-XII.

[0022] Figure 13 This is a top view of the semiconductor device according to the third embodiment.

[0023] Figure 14 yes Figure 13 Sectional view along line XIV-XIV.

[0024] Figure 15 This is a top view of the semiconductor device according to the fourth embodiment.

[0025] Figure 16 It is a circuit diagram of a semiconductor device.

[0026] Figure 17 This is a top view of the semiconductor device according to the fifth embodiment.

[0027] Figure 18 This is a cross-sectional view of the semiconductor device according to the sixth embodiment.

[0028] Figure 19 This is a cross-sectional view of the semiconductor device according to the seventh embodiment.

[0029] Figure 20 This is a cross-sectional view of the semiconductor device according to the eighth embodiment.

[0030] Figure 21 This is a cross-sectional view of the semiconductor device according to the ninth embodiment.

[0031] Figure 22 This is a cross-sectional view of the semiconductor device according to the tenth embodiment.

[0032] Figure 23 This is a cross-sectional view of the semiconductor device according to the eleventh embodiment.

[0033] Figure 24 This is a cross-sectional view of the semiconductor device according to the twelfth embodiment.

[0034] Figure 25 This is a cross-sectional view of the semiconductor device according to the thirteenth embodiment.

[0035] Figure 26 This is a cross-sectional view of the semiconductor device according to the fourteenth embodiment.

[0036] Figure 27 This is a cross-sectional view of the semiconductor device according to the fifteenth embodiment.

[0037] Figure 28 It is a circuit diagram of a semiconductor device.

[0038] Figure 29 This is a top view of the semiconductor device according to the sixteenth embodiment.

[0039] Figure 30 yes Figure 29 Sectional view along line XXX-XXX.

[0040] Figure 31 yes Figure 29 Sectional view along line XXXI-XXXI.

[0041] Figure 32 This is a top view of the semiconductor device according to the seventeenth embodiment.

[0042] Figure 33 yes Figure 32 Sectional view along line XXXIII-XXXIII. Detailed Implementation

[0043] Hereinafter, embodiments will be described with reference to the accompanying drawings. Furthermore, in each of the following embodiments, the same reference numerals will be used to label the same or equivalent parts, and their descriptions will be omitted.

[0044] (First Implementation) The semiconductor device of this embodiment suppresses the temperature rise of the heat-generating component. Specifically, as... Figures 1-4 As shown, the semiconductor device 10 includes a substrate 15, a first semiconductor element 21, a bonding material 31 for the first semiconductor element, a first gate wiring 41, a second semiconductor element 22, a bonding material 32 for the second semiconductor element, a second gate wiring 42, and a first heat dissipation component 51. Furthermore, the semiconductor device 10 includes a third semiconductor element 23, a bonding material 33 for the third semiconductor element, a third gate wiring 43, a fourth semiconductor element 24, a bonding material 34 for the fourth semiconductor element, a fourth gate wiring 44, and a second heat dissipation component 52. Additionally, the semiconductor device 10 includes a P-terminal 61, a P-terminal bonding material 71, an O-terminal 62, an O-terminal bonding material 72, an N-terminal 63, an N-terminal bonding material 73, a buffer circuit 75, a sealing resin 80, a heat conduction component 85, and a cooler 90.

[0045] Substrate 15 is a printed circuit board made of glass epoxy resin such as FR4. FR4 is an abbreviation for Flame Retardant Type 4. Furthermore, the thickness direction of substrate 15 will be abbreviated as thickness direction DT below.

[0046] Furthermore, such as Figures 1-3 As shown, substrate 15 has a substrate surface 150 and a substrate back surface 152. The substrate surface 150 is one side of the substrate 15 in the thickness direction DT. The substrate back surface 152 is the other side of the substrate 15 in the thickness direction DT, and is the side of the substrate 15 opposite to the substrate surface 150.

[0047] The first semiconductor element 21 is, for example, a MOSFET using Si or SiC. MOSFET is an abbreviation for Metal-Oxide-Semiconductor Field-Effect Transistor.

[0048] In addition, such as Figure 2 as well as Figure 3 As shown, the source electrode of the first semiconductor element 21 is connected to the substrate surface 150 via a first semiconductor element bonding material 31. The gate electrode of the first semiconductor element 21 is connected to the first gate wiring 41 formed on the substrate 15 via the first semiconductor element bonding material 31. The first semiconductor element bonding material 31 is, for example, solder, sintered silver, etc.

[0049] The second semiconductor element 22 is, for example, a MOSFET using Si or SiC. The source electrode of the second semiconductor element 22 is connected to the substrate surface 150 via a second semiconductor element bonding material 32. Furthermore, as... Figure 4 As shown, the second semiconductor element 22 is connected in parallel with the first semiconductor element 21. (Return) Figure 2 as well as Figure 3 The gate electrode of the second semiconductor element 22 is connected to the second gate wiring 42 formed on the substrate 15 via a second semiconductor element bonding material 32. The second semiconductor element bonding material 32 is, for example, solder, sintered silver, etc.

[0050] The first heat dissipation component 51 dissipates the heat generated by the first semiconductor element 21 and the second semiconductor element 22 to the outside. The first heat dissipation component 51 is, for example, an insulating circuit board, having a first heat dissipation part 510, a first insulating part 512, and a second heat dissipation part 514.

[0051] The first heat sink 510 is formed of copper or the like. Therefore, the first heat sink 510 is conductive and has a relatively high thermal conductivity. Furthermore, the first heat sink 510 is formed in a plate shape. And, the first heat sink 510 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22.

[0052] The first insulating portion 512 is formed of ceramic or the like. Therefore, the first insulating portion 512 has electrical insulation properties. Furthermore, the first insulating portion 512 is formed in a plate shape. Moreover, the first insulating portion 512 is connected in the thickness direction DT to the side of the first heat dissipation portion 510 opposite to the first semiconductor element 21 and the second semiconductor element 22.

[0053] The second heat sink 514 is formed of copper or the like. Therefore, the second heat sink 514 is electrically conductive and has a relatively high thermal conductivity. Furthermore, the second heat sink 514 is formed in a plate shape. Moreover, the second heat sink 514 is connected in the thickness direction DT to the side of the first insulating portion 512 opposite to the first heat sink 510. Therefore, when the first semiconductor element 21 and the second semiconductor element 22 generate heat, the heat from the first semiconductor element 21 and the second semiconductor element 22 is dissipated through conduction to the first heat sink 51.

[0054] The third semiconductor element 23 is, for example, a MOSFET using Si or SiC. Furthermore, the source electrode of the third semiconductor element 23 is connected to the substrate surface 150 via a third semiconductor element bonding material 33. The gate electrode of the third semiconductor element 23 is connected to the third gate wiring 43 formed on the substrate 15 via the third semiconductor element bonding material 33. The third semiconductor element bonding material 33 is, for example, solder, sintered silver, etc.

[0055] The fourth semiconductor element 24 is, for example, a MOSFET using Si or SiC. The source electrode of the fourth semiconductor element 24 is connected to the substrate surface 150 via a fourth semiconductor element bonding material 34. Furthermore, as... Figure 4 As shown, the fourth semiconductor element 24 is connected in parallel with the third semiconductor element 23. Return to Figure 2 as well as Figure 3 The gate electrode of the fourth semiconductor element 24 is connected to the fourth gate wiring 44 formed on the substrate 15 via a fourth semiconductor element bonding material 34. The fourth semiconductor element bonding material 34 is, for example, solder, sintered silver, etc.

[0056] The second heat dissipation component 52 dissipates the heat generated by the third semiconductor element 23 and the fourth semiconductor element 24 to the outside. The second heat dissipation component 52 is, for example, an insulating circuit board, having a third heat dissipation part 520, a second insulating part 522, and a fourth heat dissipation part 524.

[0057] The third heat dissipation section 520 is formed of copper or the like. Therefore, the third heat dissipation section 520 is conductive and has a relatively high thermal conductivity. Furthermore, the third heat dissipation section 520 is formed in a plate shape. Moreover, the third heat dissipation section 520 is connected to the drain electrode of the third semiconductor element 23 and the drain electrode of the fourth semiconductor element 24.

[0058] The second insulating portion 522 is formed of ceramic or the like. Therefore, the second insulating portion 522 has electrical insulation properties. Furthermore, the second insulating portion 522 is formed in a plate shape. Moreover, the second insulating portion 522 is connected in the thickness direction DT to the side of the third heat dissipation portion 520 opposite to the third semiconductor element 23 and the fourth semiconductor element 24.

[0059] The fourth heat dissipation portion 524 is formed of copper or the like. Therefore, the fourth heat dissipation portion 524 is electrically conductive and has a relatively high thermal conductivity. Furthermore, the fourth heat dissipation portion 524 is formed in a plate shape. Moreover, the fourth heat dissipation portion 524 is connected in the thickness direction DT to the side of the second insulating portion 522 opposite to the third heat dissipation portion 520. Therefore, when the third semiconductor element 23 and the fourth semiconductor element 24 generate heat, the heat from the third semiconductor element 23 and the fourth semiconductor element 24 is dissipated through conduction to the second heat dissipation member 52.

[0060] The P-terminal 61 is conductive by being formed of a metal or the like. Furthermore, the P-terminal 61 is formed, for example, in a plate shape. Moreover, as... Figure 2 As shown, the P-terminal 61 is connected to the substrate surface 150 in the thickness direction DT via a P-terminal bonding material 71. The P-terminal bonding material 71 is, for example, solder, sintered silver, etc. Furthermore, the P-terminal 61 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via the P-terminal bonding material 71, vias and wiring layers formed on the substrate 15, bonding material, and the first heat sink 510. Therefore, as... Figure 4 As shown, one end of the P terminal 61 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22.

[0061] Furthermore, the other end of the P terminal 61 is connected to one end of the supply capacitor 92. The supply capacitor 92 is disposed outside the semiconductor device 10. In addition, the supply capacitor 92 is charged by power from a power source (not shown). Furthermore, the supply capacitor 92 supplies the charged power to the semiconductor device 10 via the P terminal 61.

[0062] The O terminal 62 is conductive by being formed of a metal or the like. Furthermore, the O terminal 62 may be formed, for example, in a plate shape. Figure 2 and Figure 3 As shown, the O terminal 62 is connected to the substrate surface 150 in the thickness direction DT via the O terminal bonding material 72. The O terminal bonding material 72 is, for example, solder, sintered silver, etc.

[0063] Furthermore, the O-terminal 62 is connected to the source electrode of the first semiconductor element 21 via the O-terminal bonding material 72, the vias and wiring layers formed on the substrate 15, and the first semiconductor element bonding material 31. Also, the O-terminal 62 is connected to the source electrode of the second semiconductor element 22 via the O-terminal bonding material 72, the vias and wiring layers formed on the substrate 15, and the second semiconductor element bonding material 32. Additionally, the O-terminal 62 is connected to the drain electrode of the third semiconductor element 23 and the drain electrode of the fourth semiconductor element 24 via the O-terminal bonding material 72, the vias and wiring layers formed on the substrate 15, the bonding material, and the third heat dissipation portion 520. Therefore, as... Figure 4 As shown, one end of the O terminal 62 is connected to the source electrode of the first semiconductor element 21, the source electrode of the second semiconductor element 22, the drain electrode of the third semiconductor element 23, and the drain electrode of the fourth semiconductor element 24.

[0064] Furthermore, the other end of terminal O 62 is connected to a load (not shown). Additionally, terminal O 62 outputs current to the load corresponding to the on / off state of the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0065] return Figure 3 The N-terminal 63 is connected to the substrate surface 150 in the thickness direction DT via the N-terminal bonding material 73. The N-terminal bonding material 73 is, for example, solder or sintered silver. Furthermore, the N-terminal 63 is connected to the source electrode of the third semiconductor device 23 via the N-terminal bonding material 73, via a via and wiring layer formed on the substrate 15, and via a third semiconductor device bonding material 33. Additionally, the N-terminal 63 is connected to the source electrode of the fourth semiconductor device 24 via the N-terminal bonding material 73, via a via and wiring layer formed on the substrate 15, and via a fourth semiconductor device bonding material 34. Therefore, as... Figure 4 As shown, one end of the N terminal 63 is connected to the source electrode of the third semiconductor element 23 and the source electrode of the fourth semiconductor element 24. The other end of the N terminal 63 is connected to the other end of the supply capacitor 92.

[0066] The buffer circuit 75 receives power from the supply capacitor 92 and supplies the received power to the semiconductor device 10. Through the buffer circuit 75, the current path is shortened compared to the case where power is supplied from the supply capacitor 92 to the semiconductor device 10, thus suppressing the increase in inductance. For example, the buffer circuit 75 includes a resistive element 750 and a capacitive element 760.

[0067] The resistive element 750 is equivalent to a heating component; it is a resistive body that heats up when current flows through it. Additionally, as... Figure 1 and Figure 2As shown, the resistor element 750 is connected to the back surface 152 of the substrate in the thickness direction DT. Furthermore, one end of the resistor element 750 is connected to the P terminal 61 via a via (not shown) and a wiring layer formed on the substrate 15. Additionally, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 overlaps with the P terminal 61. Moreover, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0068] Furthermore, one end of the resistive element 750 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via a via (not shown) and a wiring layer formed on the substrate 15. Furthermore, as... Figure 4 As shown, the resistor element 750 is connected in parallel with the first semiconductor element 21 and the second semiconductor element 22.

[0069] Capacitor element 760 is a capacitor, such as Figure 1 and Figure 3 As shown, it is connected to the back side 152 of the substrate in the thickness direction DT. Additionally, one end of the capacitor element 760 is connected to the other end of the resistor element 750 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, as... Figure 4 As shown, capacitor element 760 and resistor element 750 are connected in series.

[0070] Additionally, return to Figure 1 and Figure 3 The other end of capacitor element 760 is connected to the source electrode of third semiconductor element 23 and the source electrode of fourth semiconductor element 24 via vias (not shown) and wiring layers formed on substrate 15. Furthermore, as... Figure 4 As shown, capacitor element 760 is connected in parallel with third semiconductor element 23 and fourth semiconductor element 24.

[0071] return Figure 2 and Figure 3The sealing resin 80, which acts as a cover, is formed of resin. Furthermore, the sealing resin 80 covers the substrate 15, the first semiconductor element 21, the bonding material 31 for the first semiconductor element, and the first gate wiring 41. It also covers the second semiconductor element 22, the bonding material 32 for the second semiconductor element, the second gate wiring 42, and the first heat dissipation component 51. Additionally, the sealing resin 80 covers the third semiconductor element 23, the bonding material 33 for the third semiconductor element, the third gate wiring 43, the fourth semiconductor element 24, the bonding material 34 for the fourth semiconductor element, the fourth gate wiring 44, and the second heat dissipation component 52. Finally, the sealing resin 80 covers a portion of the P-terminal 61, the bonding material 71 for the P-terminal, a portion of the O-terminal 62, the bonding material 72 for the O-terminal, a portion of the N-terminal 63, and the bonding material 73 for the N-terminal.

[0072] Furthermore, the back surface 152 of the substrate is exposed from the sealing resin 80. Also, the side of the second heat dissipation portion 514 opposite to the first insulating portion 512 is exposed from the sealing resin 80. Additionally, the side of the fourth heat dissipation portion 524 opposite to the second insulating portion 522 is exposed from the sealing resin 80. Moreover, the P terminal 61, O terminal 62, and N terminal 63 protrude from the sealing resin 80 in a direction orthogonal to the thickness direction DT.

[0073] The heat-conducting component 85 is formed of TIM. Therefore, the heat-conducting component 85 has a relatively high thermal conductivity. Additionally, TIM is an abbreviation for Thermal Interface Material.

[0074] Furthermore, the heat-conducting component 85 is formed in a gel-like, sheet-like, or clay-like form. The heat-conducting component 85 is connected to the exposed surfaces of the second heat dissipation portion 514 and the fourth heat dissipation portion 524 in the thickness direction DT. Additionally, the heat-conducting component 85 is connected to the surfaces of the sealing resin 80 adjacent to the exposed surfaces of the second heat dissipation portion 514 and the fourth heat dissipation portion 524 in the thickness direction DT. Moreover, when the heat-conducting component 85 is projected along the thickness direction DT, the projected heat-conducting component 85 overlaps with the P-terminal 61 and the resistive element 750. Furthermore, when the heat-conducting component 85 is projected along the thickness direction DT, the projected heat-conducting component 85 overlaps with the first semiconductor element 21 and the second semiconductor element 22. Furthermore, when the heat-conducting component 85 is projected along the thickness direction DT, the projected heat-conducting component 85 overlaps with the third semiconductor element 23 and the fourth semiconductor element 24.

[0075] A cooler 90 is disposed within the semiconductor device 10 on the substrate surface 150 side. Furthermore, the cooler 90 is connected to the side of the heat-conducting component 85 opposite to the sealing resin 80. Thus, the cooler 90 cools the semiconductor device 10. Moreover, when the cooler 90 is projected along the thickness direction DT, the projected cooler 90 overlaps with the P-terminal 61, the resistive element 750, and the heat-conducting component 85. Therefore, the P-terminal 61 is easily cooled. Alternatively, the cooler 90 can be, for example, a pipe, through which water flows to cool the semiconductor device 10. Or, the cooler 90 can be, for example, a fin, corrugated fin, or needle-shaped fin formed from a metal with high thermal conductivity such as copper or aluminum.

[0076] As described above, the semiconductor device 10 constitutes the first embodiment. Next, the suppression of temperature rise of the resistive element 750, which is a heat-generating component, by the semiconductor device 10 will be explained.

[0077] Here, as Figure 5 As shown, in Comparative Example 1, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 overlaps with the first semiconductor element 21 and the second semiconductor element 22. Furthermore, it is assumed that the first semiconductor element 21, the second semiconductor element 22, and the resistor element 750 are driven. In this case, the heat generated by the first semiconductor element 21 and the second semiconductor element 22 is easily conducted to the resistor element 750 via the bonding material 31 for the first semiconductor element, the bonding material 32 for the second semiconductor element, and the substrate 15. Therefore, the temperature of the resistor element 750 easily rises, such as... Figure 6 and Figure 7 As shown, the temperature of the resistive element 750 during operation of the device in Comparative Example 1 is approximately 250°C.

[0078] In contrast, in the semiconductor device 10 of this embodiment, such as Figure 2 As shown, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 overlaps with the P terminal 61. In addition, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0079] Therefore, the heat generated by the resistive element 750 is easily conducted to the P terminal 61. Consequently, the heat generated by the resistive element 750 is easily dissipated. Furthermore, the heat generated by the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24 is difficult to conduct to the resistive element 750. Therefore, the temperature rise of the resistive element 750, as a heat-generating component, is suppressed.

[0080] In addition, the semiconductor device 10 of the first embodiment also has the following effects.

[0081] [1-1] The P-terminal 61 is connected to the substrate surface 150. The resistive element 750 is connected to the substrate back side 152. The semiconductor device 10 also includes a cooler 90. The cooler 90 is disposed on the substrate surface 150 side and cools the P-terminal 61. In addition, when the cooler 90 is projected along the thickness direction DT, the projected cooler 90 overlaps with the P-terminal 61 and the resistive element 750.

[0082] Therefore, P terminal 61 is easily cooled. Thus, the heat generated by the resistive element 750 is easily transferred to the cooler 90 via P terminal 61. Therefore, as... Figure 7 and Figure 8 As shown, the temperature of the resistive element 750 during operation of the semiconductor device 10 in this embodiment is approximately 160°C. Therefore, compared to the device in Comparative Example 1, the temperature of the resistive element 750 is reduced by 90°C. Thus, the temperature rise of the resistive element 750 is suppressed.

[0083] Here, as described in Japanese Patent No. 5558645, as a comparative example 2, such as Figure 9 As shown, in the case where the P-terminal 61 is connected to the first heat sink 510 via a bonding material and the substrate 15 is connected to the P-terminal 61. Furthermore, in the apparatus of Comparative Example 2, a resistive element 750 is connected to the surface of the substrate 15 opposite to the P-terminal 61. Additionally, in the apparatus of Comparative Example 2, when the cooler 90 is projected along the thickness direction DT, the projected cooler 90 does not overlap with the P-terminal 61 and the resistive element 750. Therefore, the heat path from the resistive element 750 to the cooler 90 via the P-terminal 61 is relatively long. Therefore, in the apparatus of Comparative Example 2, the temperature of the resistive element 750 tends to rise.

[0084] In contrast, in the semiconductor device 10 of the first embodiment, when the cooler 90 is projected along the thickness direction DT, the projected cooler 90 overlaps with the P terminal 61 and the resistor element 750. Therefore, the heat path from the resistor element 750 to the cooler 90 via the P terminal 61 is shorter. Consequently, the temperature rise of the resistor element 750 is also suppressed compared to the device of Comparative Example 2.

[0085] [1-2] The semiconductor device 10 includes a sealing resin 80 and a heat-conducting component 85. The sealing resin 80 covers the substrate 15, the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the P-terminal 61. The heat-conducting component 85 is connected to the sealing resin 80 and the cooler 90. When the P-terminal 61 is projected along the thickness direction DT, the projected P-terminal 61 overlaps with the heat-conducting component 85.

[0086] Therefore, heat from the P terminal 61 is easily transferred to the cooler 90 via the sealing resin 80 and the heat conduction component 85. Thus, heat generated by the resistive element 750 is easily transferred to the cooler 90 via the P terminal 61, the sealing resin 80, and the heat conduction component 85. Therefore, heat generated by the resistive element 750 is easily dissipated, thereby suppressing the temperature rise of the resistive element 750.

[0087] (Second Implementation) In the second embodiment, the shapes of the P terminal 61, N terminal 63, and resistive element 750 differ from those in the first embodiment. Otherwise, they are the same as in the first embodiment.

[0088] Specifically, such as Figure 10 and Figure 11 As shown, P-terminal 61 is connected to the back surface 152 of the substrate in the thickness direction DT via P-terminal bonding material 71, rather than to the surface 150 of the substrate. Figure 10 and Figure 12 As shown, the N-terminal 63 is connected to the back surface 152 of the substrate in the thickness direction DT via the N-terminal bonding material 73, rather than to the surface 150 of the substrate. Figure 11 As shown, the resistor element 750 is connected to the substrate surface 150 in the thickness direction DT, rather than to the substrate back side 152.

[0089] As described above, the semiconductor device 10 constitutes the second embodiment. In this second embodiment, it also achieves the same effects as the first embodiment.

[0090] (Third Implementation) In the third embodiment, the shape of the capacitor element 760 differs from that in the second embodiment. Otherwise, it is the same as in the second embodiment.

[0091] Specifically, such as Figure 13 and Figure 14 As shown, the capacitor element 760 is connected to the substrate surface 150 in the thickness direction DT, rather than to the substrate back side 152.

[0092] As described above, the semiconductor device 10 constitutes the third embodiment. In this third embodiment, it also achieves the same effects as the second embodiment.

[0093] (Fourth Implementation) In the fourth embodiment, the semiconductor device 10 replaces the P-terminal 61 with a first P-terminal 611 and a second P-terminal 612. Furthermore, the configuration of the buffer circuit 75 of the semiconductor device 10 differs from that of the first embodiment. Otherwise, it is the same as the first embodiment.

[0094] The first P terminal 611 corresponds to the P terminal 61 and is conductive by being formed of a metal or the like. Additionally, as... Figure 15 and Figure 16 As shown, the first P-terminal 611 is formed, for example, in a plate shape. Furthermore, the first P-terminal 611 is connected to the substrate surface 150 in the thickness direction DT via a bonding material. In addition, the first P-terminal 611 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via the bonding material, vias and wiring layers formed on the substrate 15, and the first heat dissipation portion 510. Therefore, as... Figure 16 As shown, one end of the first P terminal 611 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22. The other end of the first P terminal 611 is connected to one end of the supply capacitor 92.

[0095] The second P terminal 612 is conductive because it is formed of a metal or the like. Additionally, as... Figure 15 and Figure 16 As shown, the second P-terminal 612 is formed, for example, in a plate shape. Furthermore, the second P-terminal 612 is connected to the substrate surface 150 in the thickness direction DT via a bonding material. In addition, the second P-terminal 612 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via the bonding material, vias and wiring layers formed on the substrate 15, and the first heat dissipation portion 510. Therefore, as... Figure 16 As shown, one end of the second P terminal 612 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22. Furthermore, the second P terminal 612 is connected in parallel with the first P terminal 611. Additionally, the other end of the second P terminal 612 is connected to one end of the supply capacitor 92.

[0096] like Figure 15 As shown, the buffer circuit 75 replaces the resistor element 750 and the capacitor element 760 and has a first resistor element 751, a second resistor element 752, a first capacitor element 761 and a second capacitor element 762.

[0097] The first resistive element 751 is a heating element that generates heat when current flows through it. Furthermore, the first resistive element 751 is connected to the back surface 152 of the substrate in the thickness direction DT. One end of the first resistive element 751 is connected to the first P-terminal 611 via a via (not shown) and wiring layer formed on the substrate 15. Additionally, when the first resistive element 751 is projected along the thickness direction DT, the projected first resistive element 751 overlaps with the first P-terminal 611. Moreover, when the first resistive element 751 is projected along the thickness direction DT, the projected first resistive element 751 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0098] Additionally, one end of the first resistive element 751 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, as... Figure 16 As shown, the first resistive element 751 is connected in parallel with the first semiconductor element 21 and the second semiconductor element 22.

[0099] The second resistive element 752 is equivalent to a heating component; it is a resistive element that heats up when current flows through it. Additionally, as... Figure 15 As shown, the second resistive element 752 is connected to the back surface 152 of the substrate in the thickness direction DT. Furthermore, one end of the second resistive element 752 is connected to the second P-terminal 612 via a via (not shown) and wiring layer formed on the substrate 15. Additionally, when the second resistive element 752 is projected along the thickness direction DT, the projected second resistive element 752 overlaps with the second P-terminal 612. Moreover, when the second resistive element 752 is projected along the thickness direction DT, the projected second resistive element 752 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0100] Additionally, one end of the second resistive element 752 is connected to the drain electrode of the first semiconductor element 21 and the drain electrode of the second semiconductor element 22 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, as... Figure 16 As shown, the second resistive element 752 is connected in parallel with the first semiconductor element 21 and the second semiconductor element 22.

[0101] Furthermore, when the first resistive element 751 is projected along the thickness direction DT, the entire projected first resistive element 751 overlaps with the first P terminal 611. Similarly, when the second resistive element 752 is projected along the thickness direction DT, the entire projected second resistive element 752 overlaps with the second P terminal 612.

[0102] The first capacitor element 761 is a capacitor, such as Figure 15 As shown, it is connected to the back surface 152 of the substrate in the thickness direction DT. Additionally, one end of the first capacitor element 761 is connected to the other end of the resistor element 750 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, as... Figure 16 As shown, the first capacitor element 761 and the first resistor element 751 are connected in series.

[0103] Additionally, the other end of the first capacitor element 761 is connected to the source electrode of the third semiconductor element 23 and the source electrode of the fourth semiconductor element 24 via a via and wiring layer (not shown) formed on the substrate 15. Furthermore, the first capacitor element 761 is connected in parallel with the third semiconductor element 23 and the fourth semiconductor element 24.

[0104] The second capacitor element 762 is a capacitor, such as Figure 15 As shown, it is connected to the back side 152 of the substrate in the thickness direction DT. Additionally, one end of the second capacitor element 762 is connected to the other end of the resistor element 750 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, as... Figure 16 As shown, the second capacitor element 762 and the second resistor element 752 are connected in series.

[0105] Additionally, the other end of the second capacitor element 762 is connected to the source electrode of the third semiconductor element 23 and the source electrode of the fourth semiconductor element 24 via a via (not shown) and wiring layer formed on the substrate 15. Furthermore, the second capacitor element 762 is connected in parallel with the third semiconductor element 23 and the fourth semiconductor element 24.

[0106] return Figure 15 Here, the area of ​​the surface of the first P terminal 611 opposite to the first resistive element 751 in the thickness direction DT is designated as Sp1. The area of ​​the surface of the second P terminal 612 opposite to the second resistive element 752 in the thickness direction DT is designated as Sp2. The area of ​​the surface of the N terminal 63 opposite to the first capacitor element 761 and the second capacitor element 762 in the thickness direction DT is designated as Sn.

[0107] Furthermore, the sum of Sp1 and Sp2 is greater than Sn, that is, Sp1 + Sp2 > Sn.

[0108] As described above, the semiconductor device 10 constitutes the fourth embodiment. In this fourth embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the fourth embodiment, the following effects are also achieved.

[0109] [2-1] The buffer circuit 75 has a first resistive element 751 and a second resistive element 752. When the first resistive element 751 is projected along the thickness direction DT, the projected first resistive element 751 overlaps with the first P terminal 611. When the second resistive element 752 is projected along the thickness direction DT, the projected second resistive element 752 overlaps with the second P terminal 612. Furthermore, the first P terminal 611 corresponds to the first terminal. The second P terminal 612 corresponds to the second terminal.

[0110] Therefore, in the presence of multiple heat-generating components, the situation where heat is concentrated and conducted to a single terminal is suppressed. Consequently, the temperature rise of the first P terminal 611 and the second P terminal 612 is suppressed. Therefore, the heat generated by the first resistive element 751 is easily dissipated to the first P terminal 611, and the heat generated by the second resistive element 752 is easily dissipated to the second P terminal 612. Thus, the temperature rise of both the first resistive element 751 and the second resistive element 752 is suppressed.

[0111] [2-2] The sum of Sp1 and Sp2 is greater than Sn, that is, Sp1 + Sp2 > Sn.

[0112] Therefore, compared to the case where Sp1+Sp2≤Sn, the heat transfer from the first resistive element 751 to the first P terminal 611 and from the second resistive element 752 to the second P terminal 612 increases. Thus, the temperature rise of the first resistive element 751 and the second resistive element 752 is suppressed.

[0113] (Fifth Implementation) In the fifth embodiment, the shapes of the P terminal 61 and the N terminal 63 differ from those in the first embodiment. Otherwise, they are the same as in the first embodiment.

[0114] Here, as Figure 17 As shown, the area of ​​the surface of P terminal 61 opposite to the resistive element 750 in the thickness direction DT is set as Sp0. The area of ​​the surface of N terminal 63 opposite to the capacitive element 760 in the thickness direction DT is set as Sn0. Furthermore, P terminal 61 corresponds to the first terminal, and N terminal 63 corresponds to the second terminal.

[0115] Furthermore, Sp0 is greater than Sn0, that is, Sp0 > Sn0.

[0116] Furthermore, when the resistor element 750 is projected along the thickness direction DT, the entire projected resistor element 750 overlaps with the P terminal 61.

[0117] As described above, the semiconductor device 10 constitutes the fifth embodiment. In this fifth embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the fifth embodiment, the following effects are also achieved.

[0118] [3] Since Sp0 > Sn0, the heat transfer from the resistive element 750 to the P terminal 61 is greater than that in the case of Sp0 ≤ Sn0. Therefore, the temperature rise of the resistive element 750 is suppressed.

[0119] (Sixth Implementation Method) In the sixth embodiment, the shape of the P terminal 61 differs from that in the first embodiment. Otherwise, it is the same as in the first embodiment.

[0120] Specifically, such as Figure 18 As shown, the P terminal 61 has a protrusion 615. The protrusion 615 protrudes from the portion of the P terminal 61 that overlaps with the resistive element 750 toward the cooler 90. Moreover, the protrusion 615 is formed in the shape of a quadrangular prism. In addition, the protrusion 615 is not limited to being formed in the shape of a quadrangular prism, and may also be formed in the shape of a cylinder, an arc-shaped cylinder, a hemispherical shape, etc.

[0121] As described above, the semiconductor device 10 constitutes the sixth embodiment. In this sixth embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the sixth embodiment, the following effects are also achieved.

[0122] [4] The P terminal 61 has a protrusion 615. Through the protrusion 615, heat from the P terminal 61 is easily transferred to the cooler 90. Therefore, heat generated by the resistive element 750 is easily transferred to the cooler 90 via the P terminal 61. Therefore, heat generated by the resistive element 750 is easily dissipated, thus suppressing the temperature rise of the resistive element 750.

[0123] (Seventh Implementation) In the seventh embodiment, the semiconductor device 10, as Figure 19 As shown, it also includes a connecting member 94 and a heat transfer member 96. Apart from this, it is the same as the first embodiment.

[0124] The connecting component 94 is connected to the portion of the P terminal 61 that overlaps with the resistive element 750. Alternatively, the connecting component 94 may be, for example, solder, sintered silver, or an adhesive.

[0125] The heat transfer component 96 is made of copper or the like. Therefore, the heat transfer component 96 has a relatively high thermal conductivity. Furthermore, the heat transfer component 96 is connected to the side of the connecting component 94 opposite to the P terminal 61. Additionally, the heat transfer component 96 protrudes from the boundary with the connecting component 94 toward the cooler 90. Moreover, the heat transfer component 96 is formed in a quadrangular prism shape. However, the heat transfer component 96 is not limited to being formed in a quadrangular prism shape; for example, it may also be formed in a cylindrical shape, an arcuate cylindrical shape, a hemispherical shape, etc.

[0126] As described above, the semiconductor device 10 constitutes the seventh embodiment. In this seventh embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the seventh embodiment, the following effects are also achieved.

[0127] [5] The semiconductor device 10 also includes a connection member 94 and a heat transfer member 96. Thus, heat from the P-terminal 61 is easily transferred to the cooler 90. Therefore, heat generated by the resistive element 750 is easily transferred to the cooler 90 via the P-terminal 61. Heat generated by the resistive element 750 is easily dissipated, thus suppressing the temperature rise of the resistive element 750.

[0128] (Eighth Implementation Method) In the eighth embodiment, such as Figure 20 As shown, the semiconductor device 10 also includes a connection member 94, a first heat transfer member 961, an insulating member 98, and a second heat transfer member 962. Apart from this, it is the same as in the first embodiment.

[0129] The connecting component 94 is connected to the portion of the P terminal 61 that overlaps with the resistive element 750. Alternatively, the connecting component 94 may be, for example, solder, sintered silver, or an adhesive.

[0130] The first heat transfer component 961 is made of copper or the like. Therefore, the first heat transfer component 961 has a relatively high thermal conductivity. Furthermore, the first heat transfer component 961 is connected to the side of the connecting component 94 opposite to the P terminal 61. Additionally, the first heat transfer component 961 is formed in a plate shape. However, the first heat transfer component 961 is not limited to being formed in a plate shape; for example, it can also be formed in a cylindrical shape, an arcuate cylindrical shape, a hemispherical shape, etc.

[0131] The insulating member 98 is formed of ceramic or the like. Therefore, the insulating member 98 has electrical insulation properties. Furthermore, the insulating member 98 is connected to the side of the first heat transfer member 961 opposite to the connecting member 94. Additionally, the insulating member 98 is formed in a plate shape. However, the insulating member 98 is not limited to being formed in a plate shape; for example, it can also be formed in a cylindrical shape, an arcuate cylindrical shape, a hemispherical shape, etc.

[0132] The second heat transfer component 962 is formed of copper or the like. Therefore, the second heat transfer component 962 has a relatively high thermal conductivity. Furthermore, the second heat transfer component 962 is connected to the side of the insulating component 98 opposite to the first heat transfer component 961. Additionally, the second heat transfer component 962 is formed in a plate shape. Therefore, the second heat transfer component 962, together with the first heat transfer component 961 and the insulating component 98, constitutes an insulating circuit board. Moreover, the second heat transfer component 962 is opposite to the cooler 90 in the thickness direction DT. Furthermore, the side of the second heat transfer component 962 opposite to the insulating component 98 is exposed from the sealing resin 80. And, the side of the second heat transfer component 962 opposite to the insulating component 98 is connected to the heat conduction component 85. Furthermore, the second heat transfer component 962 is not limited to being formed in a plate shape; for example, it can also be formed in a cylindrical shape, an arcuate cylindrical shape, a hemispherical shape, etc.

[0133] As described above, the semiconductor device 10 constitutes the eighth embodiment. In this eighth embodiment, it also achieves the same effects as in the first embodiment. Furthermore, in the eighth embodiment, the following effects are also achieved.

[0134] [6] The semiconductor device 10 also includes a connection component 94, a first heat transfer component 961, an insulating component 98, and a second heat transfer component 962.

[0135] Therefore, heat from terminal 61 is easily transferred to cooler 90. Thus, heat generated by resistor 750 is easily transferred to cooler 90 via terminal 61. Therefore, heat generated by resistor 750 is easily dissipated, thereby suppressing the temperature rise of resistor 750.

[0136] (Ninth Implementation) In the ninth embodiment, the semiconductor device 10 is as follows: Figure 21 As shown, it also includes a heat transfer component 96 and an insulation component 98. Apart from this, it is the same as the first embodiment.

[0137] The heat transfer component 96 is made of copper or the like. Therefore, the heat transfer component 96 has a relatively high thermal conductivity. Furthermore, the heat transfer component 96 is connected to the side of the insulating component 98 opposite to the P terminal 61 (described later). Additionally, the heat transfer component 96 is formed in a quadrangular prism shape. Moreover, the heat transfer component 96 faces the cooler 90 in the thickness direction DT. Furthermore, the side of the heat transfer component 96 opposite to the insulating component 98 is exposed from the sealing resin 80. And, the side of the heat transfer component 96 opposite to the insulating component 98 is connected to the heat conduction component 85. Furthermore, the heat transfer component 96 is not limited to being formed in a plate shape; for example, it can also be formed in a cylindrical shape, an arcuate cylindrical shape, a hemispherical shape, etc.

[0138] The insulating component 98 is formed of resin, ceramic, or the like. Therefore, the insulating component 98 has electrical insulation properties. Furthermore, the insulating component 98 is connected to the portion of the P-terminal 61 that overlaps with the resistive element 750 via an adhesive or the like. Moreover, the insulating component 98 is formed in a quadrangular prism shape. However, the insulating component 98 is not limited to being formed in a quadrangular prism shape; for example, it may also be formed in a cylindrical shape, an arcuate prism shape, a hemispherical shape, etc.

[0139] As described above, the semiconductor device 10 constitutes the ninth embodiment. In this ninth embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the ninth embodiment, the following effects are also achieved.

[0140] [7] The semiconductor device 10 also includes an insulating component 98 and a heat transfer component 96. Therefore, heat from the P-terminal 61 is easily transferred to the cooler 90. Therefore, heat generated by the resistive element 750 is easily transferred to the cooler 90 via the P-terminal 61. Therefore, heat generated by the resistive element 750 is easily dissipated, thus suppressing the temperature rise of the resistive element 750.

[0141] (Tenth Implementation) In the tenth embodiment, the shape of the heat-conducting component 85 differs from that in the first embodiment. Otherwise, it is the same as in the first embodiment.

[0142] In the first embodiment, when the heat-conducting component 85 is projected along the thickness direction DT, the projected heat-conducting component 85 overlaps with the P terminal 61. In contrast, in the tenth embodiment, as... Figure 22 As shown, when the heat conduction component 85 is projected along the thickness direction DT, the projected heat conduction component 85 does not overlap with the P terminal 61.

[0143] As described above, the semiconductor device 10 constitutes the tenth embodiment. This tenth embodiment is also the same as the first embodiment.

[0144] (Eleventh Implementation Method) In the eleventh embodiment, such as Figure 23 As shown, the semiconductor device 10 replaces the heat conduction component 85 with a first heat conduction component 851 and a second heat conduction component 852. Otherwise, it is the same as the first embodiment.

[0145] The first heat-conducting component 851 is formed from epoxy resin or the like for bottom and side filling, and is in the form of a gel, sheet, or clay. Furthermore, the first heat-conducting component 851 is connected in the thickness direction DT to the portion of the sealing resin 80 overlapping with the P terminal 61 and the portion of the cooler 90. Additionally, when the first heat-conducting component 851 is projected along the thickness direction DT, the projected first heat-conducting component 851 overlaps with the P terminal 61, the resistive element 750, and the cooler 90. Moreover, when the first heat-conducting component 851 is projected along the thickness direction DT, the projected first heat-conducting component 851 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0146] The second heat conduction component 852 is formed from a material different from that of the first heat conduction component 851, and can be in the form of a gel, sheet, or clay. For example, the material of the second heat conduction component 852 may be solder, sintered silver, etc. Furthermore, the second heat conduction component 852 is connected to the exposed surfaces of the second heat dissipation portion 514 and the fourth heat dissipation portion 524 in the thickness direction DT. Moreover, when the second heat conduction component 852 is projected along the thickness direction DT, the projected second heat conduction component 852 overlaps with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the cooler 90. When the second heat conduction component 852 is projected along the thickness direction DT, the projected second heat conduction component 852 does not overlap with the P terminal 61 and the resistor element 750.

[0147] As described above, the semiconductor device 10 constitutes the eleventh embodiment. In this eleventh embodiment, it also achieves the same effects as the first embodiment. Furthermore, in the eleventh embodiment, the following effects are also achieved.

[0148] [8] The semiconductor device 10 includes a first heat-conducting component 851 and a second heat-conducting component 852. The material of the first heat-conducting component 851 is different from that of the second heat-conducting component 852. The first heat-conducting component 851 contains epoxy resin. As a result, the connection between the sealing resin 80 and the cooler 90 becomes more secure.

[0149] (Twelfth Implementation) In the twelfth embodiment, the shape of the P terminal 61 and the first heat dissipation component 51 differs from that in the first embodiment. Otherwise, they are the same as in the first embodiment.

[0150] Specifically, such as Figure 24 As shown, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 does not overlap with the P terminal 61.

[0151] Furthermore, the first heat dissipation portion 510, the first insulation portion 512, and the second heat dissipation portion 514 of the first heat dissipation component 51 extend in a direction orthogonal to the thickness direction DT. As a result, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 overlaps with the first heat dissipation portion 510, the first insulation portion 512, and the second heat dissipation portion 514.

[0152] As described above, the semiconductor device 10 constitutes the twelfth embodiment. In this twelfth embodiment, it also achieves the same effects as the first embodiment.

[0153] (Thirteenth Implementation Method) In the thirteenth embodiment, the shape of the P terminal 61 differs from that in the twelfth embodiment. Otherwise, it is the same as in the twelfth embodiment.

[0154] Specifically, such as Figure 25 As shown, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 overlaps with the P terminal 61, instead of not overlapping with the P terminal 61 as in the twelfth embodiment.

[0155] As described above, the semiconductor device 10 constitutes the thirteenth embodiment. In this thirteenth embodiment, it also achieves the same effects as in the twelfth embodiment.

[0156] (Fourteenth Implementation) In the fourteenth embodiment, the semiconductor device 10 further includes a connection member 94. Otherwise, it is the same as in the thirteenth embodiment.

[0157] The connecting component 94 is formed of solder or the like. Additionally, as... Figure 26 As shown, the connecting member 94 is connected in the thickness direction DT to the side of the P terminal 61 opposite to the P terminal bonding material 71. Furthermore, the connecting member 94 is connected to the first heat dissipation part 510.

[0158] As described above, the semiconductor device 10 constitutes the fourteenth embodiment. In this fourteenth embodiment, it also achieves the same effects as in the thirteenth embodiment.

[0159] (Fifteenth Implementation) In the fifteenth embodiment, the semiconductor device 10 as follows Figure 27 and Figure 28 As shown, it also includes a shunt resistor of 100. Apart from this, it is the same as the first embodiment.

[0160] like Figure 27As shown, the shunt resistor 100 is connected to the back surface 152 of the substrate in the thickness direction DT. When the shunt resistor 100 is projected along the thickness direction DT, the projected shunt resistor 100 overlaps with the O terminal 62, the heat conduction component 85, and the cooler 90.

[0161] Furthermore, the shunt resistor 100 is connected to the source electrode of the first semiconductor element 21 via vias and wiring layers formed on the substrate 15, and to the first semiconductor element bonding material 31. The shunt resistor 100 is also connected to the source electrode of the second semiconductor element 22 via vias and wiring layers formed on the substrate 15, and to the second semiconductor element bonding material 32. Additionally, the shunt resistor 100 is connected to the drain electrode of the third semiconductor element 23 and the drain electrode of the fourth semiconductor element 24 via vias and wiring layers formed on the substrate 15, the bonding material, and the third heat dissipation portion 520. Finally, the shunt resistor 100 is connected to the O terminal 62 via vias and wiring layers formed on the substrate 15, and to the O terminal bonding material 72. Therefore, as... Figure 28 As shown, one end of the shunt resistor 100 is connected to the source electrode of the first semiconductor element 21, the source electrode of the second semiconductor element 22, the drain electrode of the third semiconductor element 23, and the drain electrode of the fourth semiconductor element 24. The other end of the shunt resistor 100 is connected to the O terminal 62. Therefore, the shunt resistor 100 detects the current flowing through the O terminal 62 corresponding to the on / off state of the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24.

[0162] As described above, the semiconductor device 10 constitutes the fifteenth embodiment. In this fifteenth embodiment, it also achieves the same effects as the first embodiment.

[0163] (Sixteenth Implementation) In the sixteenth embodiment, the shapes of the first resistive element 751 and the second resistive element 752 differ from those in the fourth embodiment. Otherwise, they are the same as in the fourth embodiment.

[0164] Specifically, such as Figure 29 as well as Figure 30 As shown, the first resistive element 751 is connected to the substrate surface 150 in the thickness direction DT, rather than to the substrate back surface 152. Furthermore, as... Figure 30As shown, the first resistive element 751 is disposed between the first semiconductor element 21 and the first P-terminal 611 in a direction orthogonal to the thickness direction DT. Furthermore, when the first resistive element 751 is projected along the thickness direction DT, the projected first resistive element 751 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the first P-terminal 611. When the first resistive element 751 is projected along a direction orthogonal to the thickness direction DT, the projected first resistive element 751 overlaps with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the first P-terminal 611.

[0165] Here, the shortest distance from the first resistive element 751 to the first P terminal 611 in a direction orthogonal to the thickness direction DT is defined as Drp1. The shortest distance from the first resistive element 751 to the first semiconductor element 21 in a direction orthogonal to the thickness direction DT is defined as Drs1.

[0166] Furthermore, Drp1 is shorter than Drs1, i.e., Drp1 < Drs1.

[0167] like Figure 29 and Figure 31 As shown, the second resistive element 752 is connected to the substrate surface 150 in the thickness direction DT, rather than to the substrate back surface 152. Furthermore, as... Figure 31 As shown, the second resistive element 752 is disposed between the first semiconductor element 21 and the second P-terminal 612 in a direction orthogonal to the thickness direction DT. Furthermore, when the second resistive element 752 is projected along the thickness direction DT, the projected second resistive element 752 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the second P-terminal 612. When the second resistive element 752 is projected along a direction orthogonal to the thickness direction DT, the projected second resistive element 752 overlaps with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the second P-terminal 612.

[0168] Here, as Figure 31 As shown, the shortest distance from the second resistive element 752 to the second P terminal 612 in a direction orthogonal to the thickness direction DT is defined as Drp2. The shortest distance from the second resistive element 752 to the first semiconductor element 21 in a direction orthogonal to the thickness direction DT is defined as Drs2.

[0169] Furthermore, Drp2 is shorter than Drs2, i.e., Drp2 < Drs2.

[0170] As described above, the semiconductor device 10 constitutes the sixteenth embodiment. In this sixteenth embodiment, it also achieves the same effects as in the fourth embodiment.

[0171] (Seventeenth Implementation) In the seventeenth embodiment, the shape of the resistive element 750 differs from that in the first embodiment. Otherwise, it is the same as in the first embodiment.

[0172] Specifically, such as Figure 32 as well as Figure 33 As shown, the resistor element 750 is connected to the substrate surface 150 in the thickness direction DT, rather than to the substrate back surface 152. Furthermore, the resistor element 750 is disposed between the first semiconductor element 21 and the P-terminal 61 in a direction orthogonal to the thickness direction DT. Additionally, when the resistor element 750 is projected along the thickness direction DT, the projected resistor element 750 does not overlap with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the P-terminal 61. However, when the resistor element 750 is projected in a direction orthogonal to the thickness direction DT, the projected resistor element 750 overlaps with the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, the fourth semiconductor element 24, and the P-terminal 61.

[0173] Here, the shortest distance from the resistive element 750 to the P terminal 61 in the direction orthogonal to the thickness direction DT is defined as Drp0. The shortest distance from the resistive element 750 to the first semiconductor element 21 in the direction orthogonal to the thickness direction DT is defined as Drs0.

[0174] Furthermore, Drp0 is shorter than Drs0, i.e., Drp0 < Drs0.

[0175] As described above, the semiconductor device 10 constitutes the seventeenth embodiment. In this seventeenth embodiment, it also achieves the same effects as the first embodiment.

[0176] (Other implementation methods) This disclosure is not limited to the above-described embodiments, and appropriate modifications can be made to the above-described embodiments. In addition, in each of the above embodiments, the elements constituting the embodiments are of course not essential, except where they are specifically expressed as necessary or where they are obviously considered necessary in principle.

[0177] In the above embodiments, the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24 are MOSFETs. However, the first semiconductor element 21, the second semiconductor element 22, the third semiconductor element 23, and the fourth semiconductor element 24 are not limited to MOSFETs; for example, they could also be IGBTs. Furthermore, IGBT is short for Insulated Gate Bipolar Transistor.

[0178] In the above embodiments, the P terminal 61, O terminal 62, N terminal 63, first P terminal 611, and second P terminal 612 are formed in a plate shape. In contrast, the P terminal 61, O terminal 62, N terminal 63, first P terminal 611, and second P terminal 612 are not limited to being formed in a plate shape; for example, they may also be formed in a cylindrical shape, an arc-shaped shape, or a rod shape.

[0179] In the above embodiments, the heat-generating components include the resistor 750, the first resistor 751, and the second resistor 752 of the buffer circuit 75. However, the heat-generating component is not limited to the first resistor 751 and the second resistor 752 of the buffer circuit 75; for example, it could also be a shunt resistor 100.

[0180] In the above embodiments, the first heat dissipation component 51 and the second heat dissipation component 52 are insulating circuit boards. However, the first heat dissipation component 51 and the second heat dissipation component 52 are not limited to insulating circuit boards; for example, they may also be copper plates.

[0181] In the embodiments described above, the back surface 152 of the substrate is exposed from the sealing resin 80. However, the back surface 152 of the substrate is not limited to being exposed from the sealing resin 80. The back surface 152 of the substrate may also not be exposed from the sealing resin 80, but may be covered by the sealing resin 80.

[0182] In the above embodiments, the second heat dissipation portion 514 and the fourth heat dissipation portion 524 are exposed from the sealing resin 80. However, the second heat dissipation portion 514 and the fourth heat dissipation portion 524 are not limited to being exposed from the sealing resin 80. The second heat dissipation portion 514 and the fourth heat dissipation portion 524 may also not be exposed from the sealing resin 80, but may be covered by the sealing resin 80.

[0183] In the eighth embodiment described above, the second heat transfer component 962 is exposed from the sealing resin 80. However, the second heat transfer component 962 is not limited to being exposed from the sealing resin 80. The second heat transfer component 962 may also not be exposed from the sealing resin 80, but rather be covered by the sealing resin 80.

[0184] In the ninth embodiment described above, the heat transfer component 96 is exposed from the sealing resin 80. However, the heat transfer component 96 is not limited to being exposed from the sealing resin 80. The heat transfer component 96 may also not be exposed from the sealing resin 80, but may be covered by the sealing resin 80.

[0185] The above-described embodiments can also be combined appropriately.

Claims

1. A semiconductor device, characterized in that, have: substrate; Semiconductor elements are connected to the surface of the substrate; Terminals, connected to the substrate, and having electrical conductivity; and The heating element is connected to the substrate and generates heat through the flow of electric current. When the heating element is projected along the thickness direction of the substrate, the projected heating element overlaps with the terminal.

2. The semiconductor device according to claim 1, characterized in that, When the heating element is projected along the thickness direction, the projected heating element does not overlap with the semiconductor element.

3. The semiconductor device according to claim 1, characterized in that, The terminal is configured to protrude to the outside of the semiconductor device and be able to be connected to a capacitor that supplies power to the semiconductor device.

4. The semiconductor device according to claim 1, characterized in that, The terminal is connected to the back side of the substrate. The heating element is connected to the surface.

5. The semiconductor device according to claim 1, characterized in that, The terminal is connected to the surface. The heating element is connected to the back side of the substrate.

6. The semiconductor device according to claim 5, characterized in that, The semiconductor device also includes a cooler. The cooler is disposed on the surface side and cools the terminal. When the cooler is projected along the thickness direction, the projected cooler overlaps with the terminal and the heat-generating component.

7. The semiconductor device according to claim 6, characterized in that, The terminal has a protrusion. The protrusion extends from the portion of the terminal that overlaps with the heating element toward the cooler.

8. The semiconductor device according to claim 6, characterized in that, The semiconductor device also includes connecting components and heat transfer components. The connecting component is connected to the portion of the terminal that overlaps with the heating component. The heat transfer component is connected to the side of the connecting component opposite to the terminal, and protrudes from the connecting component toward the cooler.

9. The semiconductor device according to claim 6, characterized in that, The semiconductor device further includes a connecting component, a first heat transfer component, an insulating component, and a second heat transfer component. The connecting component is connected to the portion of the terminal that overlaps with the heating component. The first heat transfer component is connected to the side of the connecting component opposite to the terminal. The insulating component is electrically insulating and is connected to the side of the first heat transfer component opposite to the connecting component. The second heat transfer component is connected to the side of the insulating component opposite to the first heat transfer component, and is opposite to the cooler in the thickness direction.

10. The semiconductor device according to claim 6, characterized in that, The semiconductor device also includes insulating components and heat transfer components. The insulating component is electrically insulating and is connected to the portion of the terminal that overlaps with the heating component. The heat transfer component is connected to the side of the insulating component opposite to the terminal, and is opposite to the cooler in the thickness direction.

11. The semiconductor device according to claim 6, characterized in that, The semiconductor device also includes a cover and a heat-conducting component. The cover portion covers the substrate, the semiconductor element, and the terminal. The heat conduction component is connected to the cover and the cooler. When the terminal is projected along the thickness direction, the projected terminal overlaps with the heat conduction component.

12. The semiconductor device according to claim 11, characterized in that, The heat conduction component is the first heat conduction component. The semiconductor device also includes a heat dissipation component and a second heat conduction component. The heat dissipation component is connected to the side of the semiconductor element opposite to the substrate and is covered by the covering portion. The second heat conduction component is connected to the heat dissipation component and the cooler. When the second heat-conducting component is projected in the thickness direction, the projected second heat-conducting component overlaps with the semiconductor element. The material of the first heat conduction component is different from that of the second heat conduction component.

13. The semiconductor device according to claim 12, characterized in that, The first heat-conducting component comprises epoxy resin.

14. The semiconductor device according to any one of claims 1 to 13, characterized in that, The semiconductor device has a buffer circuit. The buffer circuit has resistive and capacitive elements. The heating element is the resistive element. When the resistive element is projected along the thickness direction, the entire projected resistive element overlaps with the terminal.

15. The semiconductor device according to any one of claims 1 to 13, characterized in that, The terminal is the first terminal. The semiconductor device also has a second terminal and a buffer circuit. The second terminal is connected via the substrate to the same location in the semiconductor element as the location connected to the first terminal, and is conductive. The buffer circuit has a first resistive element, a second resistive element, and a capacitive element. The heating element is the first resistive element and the second resistive element. When the first resistive element is projected in the thickness direction, the projected first resistive element overlaps with the first terminal. When the second resistive element is projected in the thickness direction, the projected second resistive element overlaps with the second terminal.

16. The semiconductor device according to any one of claims 1 to 13, characterized in that, The terminal is the first terminal. The semiconductor device also has a second terminal and a buffer circuit. The second terminal is connected via the substrate to the same location in the semiconductor element as the location connected to the first terminal, and is conductive. The buffer circuit has resistive and capacitive elements. The heating element is the resistive element. When the resistive element is projected along the thickness direction, the projected resistive element overlaps with the first terminal. When the capacitor element is projected along the thickness direction, the projected capacitor element overlaps with the second terminal. The area of ​​the surface of the first terminal opposite the resistive element in the thickness direction is greater than the area of ​​the surface of the second terminal opposite the capacitive element in the thickness direction.

17. A semiconductor device, characterized in that, have: substrate; Semiconductor elements are connected to the surface of the substrate; A heat dissipation component is connected to the side of the semiconductor element opposite to the substrate and extends in a direction orthogonal to the thickness direction of the substrate; as well as The heating element is connected to the back side of the substrate and heats up through the flow of electric current. When the heat-generating component is projected along the thickness direction, the projected heat-generating component overlaps with the heat-dissipating component.

18. The semiconductor device according to claim 17, characterized in that, The semiconductor device also includes terminals. The terminal is connected to the surface and is conductive. When the heat-generating component is projected along the thickness direction, the projected heat-generating component overlaps with the heat-dissipating component and the terminal.

19. The semiconductor device according to claim 18, characterized in that, The semiconductor device also includes a connection component. The connecting component is connected to the heat dissipation component and the terminal.

20. The semiconductor device according to claim 18, characterized in that, The terminal is configured to protrude to the outside of the semiconductor device and be able to be connected to a capacitor that supplies power to the semiconductor device.

21. The semiconductor device according to any one of claims 17 to 20, characterized in that, When the heating element is projected along the thickness direction, the projected heating element does not overlap with the semiconductor element.

22. A semiconductor device, characterized in that, have: substrate; Semiconductor elements are connected to the surface of the substrate; A terminal, connected to the surface, and having electrical conductivity; and A heating element is connected to the surface and generates heat through the flow of electric current. The distance from the heating element to the terminal in a direction orthogonal to the thickness direction of the substrate is shorter than the distance from the heating element to the semiconductor element in a direction orthogonal to the thickness direction.

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