Probes and probe cards
CN122374657APending Publication Date: 2026-07-10NIHON DENSHIZAIRYO
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NIHON DENSHIZAIRYO
- Filing Date
- 2023-11-28
- Publication Date
- 2026-07-10
AI Technical Summary
Technical Problem
The existing probes suffer from wear and overheating at the tip during repeated use, and the plating is easily peeled off and lacks adhesion after replacing palladium-cobalt with boron-nickel.
Method used
The probe employs a multi-layer structure, consisting of a low-resistance section made of copper and gold, a high-resistance section made of palladium-cobalt alloy, and a medium-resistance section made of boron-nickel alloy surrounding it. This multi-layer structure is achieved through MEMS technology, ensuring the probe's wear resistance and low heat generation.
Benefits of technology
This design achieves wear resistance, low heat generation, and high adhesion between components, thereby improving the probe's service life and current conduction capability.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122374657A_ABST
Abstract
A probe (20) has a contact portion (20C) at one end and a terminal portion (20T) that contacts a circuit substrate at the other end, and includes a low-high resistance portion (20LH) that covers a low resistance portion (20L) made of a first metal with a high resistance portion (20H) made of a second metal having a higher resistivity than the low resistance portion (20L), and a middle-high resistance portion (20MH) that has a middle resistance portion (20M) connected to the low resistance portion (20L) in a longitudinal direction (X) of the probe (20) and made of a third metal having a lower resistivity than the high resistance portion (20H) and a higher resistivity than the low resistance portion (20L), and a high resistance portion (20H) connected to the high resistance portion (20H) of the low-high resistance portion (20LH) on both sides of the middle resistance portion (20M) in one direction.
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