A method for manufacturing a composite organic packaging substrate with glass core build-up and a structure thereof

Abstract

The application discloses a manufacturing method of a composite organic packaging substrate with a glass core and layer increasing and a packaging structure thereof. The method first prepares an organic core substrate with a multilayer conductor circuit, fills and levels a groove of a top layer circuit of the organic core substrate, then adheres a whole or single glass core substrate to a surface of the organic core substrate through high-transmittance double-sided adhesive, processes a TGV hole on the glass core substrate, removes double-sided adhesive at the bottom of the hole, and then performs metallization and plating hole filling to realize conduction between the glass core and the organic core circuit, and finally, the method press-bonds an insulating film, increases a fine circuit, and manufactures a solder resist layer and a tin ball bump array. Through the composite structure of the organic core and the glass core, the application realizes high-density wiring by means of the TGV technology of the glass core, relieves the glass brittleness problem by relying on the organic core substrate, and realizes accurate alignment by using high-transmittance materials, thereby improving the wiring density of the substrate, the processing yield and the mass production feasibility, and adapting to the packaging demand of high-performance chips.

Description

Technical Field

[0001] This invention relates to the field of semiconductor chip packaging, and in particular to a method and structure for fabricating a composite organic packaging substrate with a glass core layer, wherein the organic packaging substrate structure is used as a carrier for chip packaging. Background Technology

[0002] Existing substrates used for high-performance chip packaging typically consist of an organic core layer with double-sided wiring of 0.4-1.4 mm and stack-up layers on both sides of the core layer (e.g., ...). Figure 16 Because the core board layer is relatively thick, and due to the aspect ratio limitation, the via diameter of the core board layer is 150um and above, which limits the surface mount wiring density and cannot meet the increasing demand for wiring density in high-performance chip packaging.

[0003] To increase the density of through-holes in the core layer, the industry has been developing the use of glass core boards to replace organic core boards. Through-glass interconnects (TGV) are achieved by drilling through-holes in the glass core. The aperture and spacing of the holes processed on the glass core are smaller than those in the organic core layer. Therefore, adding layers on both sides of the glass core can achieve smaller wiring and thus higher wiring density. However, the inherent physical brittleness of glass core boards leads to serious breakage and core layer fracture problems during mass production, especially when using large-sized workpieces (e.g., 500mm long and 400mm wide or more). These boards are extremely prone to breakage during clamping and lamination of the organic insulating layer during layering, resulting in low processing yield and extremely high mass production difficulty.

[0004] Therefore, overcoming the aforementioned shortcomings has become an important issue that urgently needs to be addressed by those skilled in the art. Summary of the Invention

[0005] This invention overcomes the shortcomings of the above-mentioned technologies and provides a method for manufacturing a composite organic packaging substrate with a glass core layer.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] In one aspect, this invention provides a method for fabricating a composite organic packaging substrate with a glass core layer, comprising the following steps:

[0008] A method for fabricating a composite organic encapsulation substrate with a glass core layer, characterized by comprising the following steps:

[0009] Step A: Prepare an organic core substrate 000 with multilayer conductor lines, wherein a first conductor line layer 410 and a second conductor line layer 510 are formed on the upper and lower surfaces of the organic core substrate 000, respectively.

[0010] Step B: Pre-treatment of the upper surface of the organic core substrate 000: Filling the grooves between the lines of the first conductor line layer 410 of the organic core substrate 000 to form a flat surface of the organic core substrate 000.

[0011] Step C: Provide a glass core substrate and attach the glass core substrate to the upper surface of the organic core substrate 000 using a double-sided adhesive layer;

[0012] Step D: Form TGV holes 630 on the glass core substrate;

[0013] Step E: Remove the double-sided adhesive layer at the bottom of the TGV hole 630 to form a first through hole 640 to expose the underlying first conductor line layer 410. Then, perform metallization and electroplating filling on the upper surface of the glass core substrate and inside the first through hole 640 to form a first conductive filling hole 650 and a third conductor line layer 660 that are connected to the first conductor line layer 410.

[0014] Step F: An insulating film is pressed onto the surface of the third conductor line layer 660 and the upper surface of the glass core substrate to form a first insulating layer 700, so as to completely embed the third conductor line layer 660 and the glass core substrate therein;

[0015] Step G: Form a second conductive filling hole 710 and a fourth conductor circuit layer 720 on the surface of the first insulating layer 700;

[0016] The first insulating layer 700 on the surface of the glass core here uses an additive film, which is not limited to ABF from Ajinomoto Co., Ltd. of Japan. The additive layer can be made by processes such as lamination, curing, laser drilling, metallization, etc.; it can also be other equivalent insulating films; or it can be made by using photosensitive polyimide PSPI material, which is printed or spin-coated onto the surface of the third conductor circuit layer 660 and then cured by exposure and development. The second conductive filling hole 710 is formed by exposure and development.

[0017] Step H: Corresponding solder resist layers are formed on the surfaces of the second conductor circuit layer 510 and the fourth conductor circuit layer 720 respectively; each solder resist layer has multiple solder resist openings;

[0018] Step I: Fabricate a solder ball bump array 820 for chip packaging at the solder mask opening formed in the second conductor line layer 510.

[0019] Preferably, step A, which involves preparing the organic core substrate 000 with multilayer conductor lines, includes the following steps:

[0020] Step A1: A double-sided copper-clad laminate is used as the initial substrate to serve as the core board layer 100; the core board layer 100 has conductor circuit layers formed on its upper and lower surfaces, and a third conductive filling hole 103 is formed to connect the two conductor circuit layers on the upper and lower surfaces.

[0021] Step A2: Add layers to the upper and lower surfaces of the core board layer 100, adding one or more dielectric layers and conductor lines on each side to form an organic core substrate 000 with the first conductor line layer 410 and the second conductor line layer 510.

[0022] Preferably, step B includes:

[0023] Step B1: Fill the grooves between the lines of the first conductor line layer 410 of the organic core substrate 000 with organic resin 430 by printing or roller coating.

[0024] Step B2: After filling, perform heat curing treatment, and then level the surface by brushing to make the top of the first conductor circuit layer 410 flush with the top of the organic resin 430.

[0025] Preferably, step C includes:

[0026] Step C1-1: Provide a monolithic glass core substrate 600 whose dimensions match those of the organic core substrate 000;

[0027] Step C1-2: Use double-sided adhesive to attach the whole glass core substrate 600 to the surface of the first conductor circuit layer 410, and then heat-bake and cure it. After the double-sided adhesive is cured, the first double-sided adhesive layer 610 is formed.

[0028] Preferably, step C includes:

[0029] Step C2-1: Cut the glass core substrate into multiple corresponding single glass core substrates 900 according to the size of the packaging substrate unit in the preset drawing;

[0030] Step C2-2: The single glass core substrate 900 is attached one by one to the preset area of ​​the organic core substrate 000 using double-sided adhesive. Multiple single glass core substrates 900 are arranged at intervals and cured by heat baking. After the double-sided adhesive is cured, a second double-sided adhesive layer 910 is formed.

[0031] Preferably, the light transmittance of the double-sided adhesive layer is greater than 70%, and it is made of epoxy resin film or DAF film with a thickness of 3-20μm; the glass core substrate is made of one of alkali-free glass, alkaline glass, alumina glass, borosilicate glass or quartz glass, with a coefficient of thermal expansion of 1ppm / ℃~12ppm / ℃, a thermal conductivity of 1W / m・K~5W / m・K, and a thickness of 50-250μm.

[0032] Preferably, step D includes:

[0033] Step D1: Use laser-induced method to locally change a preset area of ​​the glass core substrate;

[0034] Step D2: Use hydrofluoric acid for wet etching, laser ablation, or plasma etching to remove the glass at the modified site and form a TGV hole.

[0035] Preferably, in step E, the double-sided adhesive layer at the bottom of the TGV hole 630 is removed by laser etching, plasma etching, or potassium permanganate oxidation etching; the metallization process includes depositing a metal layer on the surface of the glass core substrate and the inner wall of the first via 640.

[0036] Preferably, in step F, the first insulating layer 700 is an ABF film.

[0037] Secondly, this invention provides a composite organic substrate structure with a glass core layer, manufactured according to the method described in the first aspect, comprising:

[0038] An organic core substrate 000 has multiple conductor lines. A first conductor line layer 410 and a second conductor line layer 510 are respectively provided on the upper and lower surfaces. The line grooves of the first conductor line layer 410 are filled with organic resin 430. The top of the first conductor line layer 410 is flush with the top of the organic resin 430.

[0039] Double-sided adhesive layer, attached to the flat upper surface of the organic core substrate 000;

[0040] The glass core substrate is fixedly connected to the organic core substrate 000 by the double-sided adhesive layer. The glass core substrate is provided with a first through hole 640 formed after removing the bottom double-sided adhesive layer of the TGV hole 630. The first through hole 640 is filled with metal to form a first conductive filling hole 650. The first conductive filling hole 650 is connected to the first conductor circuit layer 410.

[0041] The third conductor circuit layer 660 is disposed on the upper surface of the glass core substrate and is electrically connected to the first conductive filling hole 650.

[0042] The first insulating layer 700 is pressed onto the surface of the glass core substrate and the third conductor circuit layer 660, completely burying both.

[0043] The fourth conductor circuit layer 720 is disposed on the surface of the first insulating layer 700 and is connected to the third conductor circuit layer 660 through the second conductive filling hole 710.

[0044] Solder resist layers are respectively disposed on the surfaces of the second conductor circuit layer 510 and the fourth conductor circuit layer 720;

[0045] The solder ball bump array 820 is located at the solder mask window of the solder mask layer corresponding to the second conductor line layer 510 and is used for chip packaging docking.

[0046] Compared with the prior art, the beneficial effects of the present invention are:

[0047] 1. This invention transfers the high-density wiring task to the glass core substrate by bonding a glass core substrate onto the organic core substrate. The glass core substrate can achieve smaller via diameters and spacings through TGV technology, enabling fine-line layering with linewidths and spacings as low as 1 micrometer, significantly improving the overall substrate wiring density, meeting the requirements of high-performance chips, and solving the problem of limited wiring density. The organic core substrate is then responsible for carrying and implementing relatively low-density line connections.

[0048] 2. To achieve precise electrical connection between the TGV aperture on the glass core substrate and the circuit layer on the organic core substrate, this solution utilizes the excellent light transmittance of the glass core substrate and the double-sided adhesive. During the bonding process, optical identification systems such as CCDs can be used to accurately identify the positions of the TGV apertures on the glass core substrate and the circuit patterns on the organic core substrate, achieving high-precision alignment and ensuring the reliability of the electrical connection.

[0049] 3. In this case, before bonding the glass core substrate, the grooves between the top layer circuits of the organic core substrate were filled with resin and ground smooth, ensuring that the surface of the organic core substrate was flat, optimizing the bonding interface, providing a good foundation for the reliable bonding of the glass core substrate, and avoiding stress concentration or gap problems caused by uneven surface.

[0050] 4. This case also addresses the issue of easy breakage during the processing of large-size panels due to the brittleness of glass materials. The glass core substrate is pre-cut into individual pieces, and these smaller glass core substrates are then individually bonded to the organic core substrate. Because the size of a single glass core substrate is much smaller than the entire working panel, the stress it experiences during subsequent processing, such as clamping and pressing, is greatly reduced. This significantly reduces the risk of glass core substrate breakage and fracture, improves processing yield, and solves the problem of glass core substrate breakage. Attached Figure Description

[0051] Figures 1 to 12 This is a process flow diagram of the fabrication method of the composite organic encapsulation substrate with glass core enhancement layer in Example 1.

[0052] Figure 13 This is a structural diagram of the packaged product described in Example 4 after chip packaging using the composite organic packaging substrate manufactured in this case.

[0053] Figures 14 to 15 This is a flowchart of the manufacturing process in Example 2, in which the glass core substrate is first cut into individual pieces and then stacked on the organic core substrate.

[0054] Figure 16 This is a schematic diagram of the traditional structure described in the background section;

[0055] in, Figure 1 This is a schematic diagram of the core board layer in step A1 of Example 1. Figure 2 This is a schematic diagram of the structure of the organic core substrate with multilayer conductor lines prepared in step A of Example 1. Figure 3 This is a schematic diagram of the structure of the organic core substrate that has undergone leveling pretreatment in step B. Figure 4 This is a schematic diagram of the structure in step C of Example 1, in which the entire glass core substrate is bonded to the organic core substrate by a double-sided adhesive layer. Figure 5 This is a schematic diagram of the structure of the glass core substrate after laser-induced modification in step D of Example 1. Figure 6 This is a schematic diagram of the structure with TGV holes formed by the modified etching in step D of Example 1. Figure 7 This is a schematic diagram of the structure after removing the corresponding double-sided adhesive layer at the bottom of the TGV hole in step E of Example 1. Figure 8 This is a schematic diagram of the structure after the first conductive filling hole and the third conductor circuit layer are in step E. Figure 9 This is a schematic diagram of the structure after pressing the insulating film in step F. Figure 10 This is a schematic diagram of the structure formed by step G, which creates the via and the fourth conductor circuit layer. Figure 11 This is a schematic diagram of the structure after the solder resist layer is processed in step H. Figure 12 This is a schematic diagram of the structure of the composite organic packaging substrate after the tin ball bump array is fabricated in the steps of Example 1. Figure 14 This is a schematic diagram of the structure after the glass core substrate has been cut into individual pieces and covered with double-sided adhesive on one side, but before it is mounted. Figure 15 yes Figure 14 A schematic diagram of a structure in which a single glass core substrate is mounted on an organic core substrate. Detailed Implementation

[0056] The following examples further illustrate the features and other related characteristics of the present invention in detail, to facilitate understanding by those skilled in the art:

[0057] Example 1

[0058] like Figures 1-12 As shown, a method for fabricating a composite organic encapsulation substrate with a glass core layer includes the following steps:

[0059] Step A: Prepare an organic core substrate 000 with multilayer conductor lines, wherein a first conductor line layer 410 and a second conductor line layer 510 are formed on the upper and lower surfaces of the organic core substrate 000, respectively; specifically, as shown in... Figure 2 The diagram shows an organic core substrate 000 with 6 layers (or 4 layers, etc.) of conductive lines. This substrate also includes vias for interlayer communication, such as 103, 420, and 520 shown in the figure. The organic core substrate can be relatively large, for example, 400mm × 500mm.

[0060] Step B: Pre-treatment of the upper surface of the organic core substrate 000: Filling the grooves between the lines of the first conductor line layer 410 of the organic core substrate 000 to form a flat surface of the organic core substrate 000; thus facilitating the subsequent bonding of the glass core substrate.

[0061] Step C: Provide a glass core substrate and stack the glass core substrate on the upper surface of the organic core substrate 000 using double-sided adhesive.

[0062] Step D: Form TGV holes 630 on the glass core substrate; In specific implementation, firstly, a laser-induced method is used to locally modify specific locations on the glass substrate, changing its structure to make it easier to etch (e.g., Figure 5 (As shown). Then, the modified area was wet-etched using hydrofluoric acid HF to form TGV holes 630 with diameters ranging from 10 to 100 micrometers (as shown). Figure 6 (As shown); In addition, laser ablation or plasma etching can also be used to form TGV holes.

[0063] Step E, as Figure 7 and Figure 8 As shown, the double-sided adhesive layer at the bottom of the TGV hole 630 is removed to form a first through hole 640 to expose the underlying first conductor line layer 410. Metallization and electroplating are performed on the upper surface of the glass core substrate and inside the first through hole 640 to form a first conductive filling hole 650 and a third conductor line layer 660 that are connected to the first conductor line layer 410.

[0064] Step F: An organic insulating film (e.g., ABF film) is laminated onto the surface of the third conductor line layer 660 and the upper surface of the glass core substrate to form a first insulating layer 700, so as to completely embed the third conductor line layer 660 and the glass core substrate therein;

[0065] Step G, as Figure 10 As shown, a second conductive filling hole 710 and a fourth conductor line layer 720 are formed on the surface of the first insulating layer 700.

[0066] Step H: Form corresponding solder resist layers on the surfaces of the second conductor line layer 510 and the fourth conductor line layer 720 respectively; in specific implementation, if only two conductor lines need to be added to the surface of the glass core substrate, then after the fourth conductor line layer 720 is processed, a first solder resist layer 800 is formed on the surface of the second conductor line layer 510 and a second solder resist layer 900 is formed on the surface of the fourth conductor line layer 720; for example Figure 11 As shown, the first solder resist layer 800 has a first solder resist opening 810, and the second solder resist layer 900 has a second solder resist opening 910.

[0067] Step I, as Figure 12 A solder ball bump array 820 for chip packaging is fabricated at the first solder mask opening 810 formed on the second conductor line layer 510.

[0068] As described above, the solution in this case involves bonding a glass core substrate to the surface of the conductor circuit layer of an organic core substrate, and achieving conductivity between the glass core substrate and the organic core substrate circuit layer through processes such as TGV. Utilizing the light transmittance of glass, precise alignment of the TGV holes on the glass core substrate with the circuit layer of the organic substrate can also be achieved. Depending on the wiring requirements of the packaging substrate, multiple layers of fine circuitry can be added to the surface of the glass core substrate. Specifically, step A forms an organic core substrate 000 as a base, providing the physical support foundation for all subsequent lamination and processing. Step B involves filling and leveling the grooves of the first conductor circuit layer of the organic core substrate with resin, ensuring the flatness of the bonding surface between the glass core substrate and the organic core substrate, and avoiding conductivity failure caused by uneven bonding or misalignment. Step C utilizes the adhesive force of double-sided tape to stack the fragile glass core board onto the lower, larger, and more robust organic core substrate. This leverages the ability of glass to process micro-apertures and small-pitch holes, solving the problem of insufficient wiring density and via diameters (≥150μm) inherent in traditional organic core substrates due to aspect ratio limitations. It achieves high-density wiring in the glass core upslab region, with a minimum linewidth / spacing of 2μm, meeting the increasing demands for wiring density in high-performance chip packaging. Furthermore, the excellent mechanical toughness of the organic core substrate mitigates the inherent physical brittleness of the glass core board, effectively avoiding the risk of breakage during clamping and pressing in the processing of large-size workpieces, significantly improving processing yield and mass production feasibility. Step D forms TGV vias on the fixed glass core substrate, creating the physical channels required for high-density interconnection. Step E removes the double-sided tape from the bottom of the TGV vias, exposing the first conductor layer of the lower organic core board, thus preparing the glass core and organic core substrate at the electrical connection point. Subsequently, in-hole metallization and electroplating are performed. Since the glass core is already firmly supported, and the TGV hole depth-to-width ratio is optimized for direct drilling of the thick glass, the difficulty of seed layer deposition and electroplating is significantly reduced. This makes it easier to obtain hole-free, highly dense metal pillars, ensuring excellent conductivity and reliability of vertical interconnects. Step F involves laminating an insulating film to form the first insulating layer, completely encapsulating the completed TGV interconnect glass core structure with the insulating film. This provides electrical insulation and further reinforces the entire substrate packaging structure, making the glass core more securely embedded in the organic core substrate. Steps G to I, through the processing of circuit layers, solder mask, and solder ball bump fabrication, retain the advantages of mature organic substrate processing and controllable costs. Furthermore, the glass core layer addition breaks through the upper limit of wiring density in organic substrates, enabling mass production of high-performance packaging substrates without significant modifications to existing organic substrate production lines, significantly reducing process upgrade costs and barriers. Simultaneously, the composite structure design gives the substrate both good mechanical strength and signal transmission integrity, adapting to the packaging requirements of high-frequency, high-density chips and expanding the substrate's application scenarios.

[0069] like Figures 1 to 2 As shown, in a preferred embodiment, step A of preparing the organic core substrate 000 with multilayer conductor lines includes the following steps:

[0070] Step A1: A double-sided copper-clad laminate is used as the initial substrate to serve as the core board layer 100. A fifth conductor circuit layer 110 is formed on the upper surface of the core board layer 100 and a sixth conductor circuit layer 120 is formed on the lower surface. The core board layer 100 also has a third conductive filling hole 103 that connects the two conductor circuit layers on the upper and lower surfaces.

[0071] Step A2: Add layers to both sides of the core board layer 100, adding one or more dielectric layers and conductor lines on each side to form an organic core substrate 000 with the first conductor line layer 410 and the second conductor line layer 510. Figure 2 or Figure 3 As shown, two dielectric layers (first dielectric layer 200 and second dielectric layer 400) are sequentially added to the upper surface of the core board layer 100, with a seventh conductor line layer 210 formed in the first dielectric layer 200 and a first conductor line layer 410 formed in the second dielectric layer 400. Two dielectric layers (third dielectric layer 300 and fourth dielectric layer 500) are sequentially added to the lower surface of the core board layer 100, with an eighth conductor line layer 310 formed in the third dielectric layer 300 and a second conductor line layer 510 formed in the fourth dielectric layer 500.

[0072] As described above, this invention uses a double-sided copper-clad laminate as the initial substrate to form the core layer, and achieves the conductivity of the initial conductor circuit layers on the upper and lower surfaces through the second conductive filling hole, laying a stable and reliable basic circuit architecture for subsequent layer addition. The "core layer + double-sided layer addition" method allows for flexible addition and removal of dielectric and conductor circuit layers, adapting to different chip wiring requirements and exhibiting strong versatility. The layered layer addition process conforms to existing mature processing procedures, ensuring processing stability and yield, and providing a regular and reliable bearing foundation for glass core substrate bonding.

[0073] Because the original grooves on the surface of the first conductor layer cause surface height differences, if they are not filled, the double-sided adhesive layer will form gaps or uneven filling at the grooves during subsequent bonding of the glass core, resulting in microbubbles or differences in adhesive layer thickness. In subsequent processing such as lamination and drilling, these uneven points will become localized stress concentration points, easily leading to microcracks or even breakage of the brittle glass core at the corresponding locations. Therefore, if... Figure 3 As shown, step B in this case includes:

[0074] Step B1: Fill the grooves between the lines of the first conductor line layer 410 of the organic core substrate 000 with organic resin 430 by printing or roller coating.

[0075] Step B2: After filling, a thermosetting process is performed, followed by a brushing process to level the surface, ensuring that the top of the first conductor circuit layer 410 is flush with the top of the organic resin 430, with a flatness error not exceeding ±1μm, thus forming a flat organic core substrate. In practice, the organic resin 430 can be filled into the grooves between the circuits using screen printing, followed by thermosetting, and finally, excess resin is removed by mechanical brushing to achieve the required surface roughness. Thus, through resin filling and brushing leveling, gaps, stress concentrations, or alignment errors caused by surface unevenness can be avoided, thereby improving the bonding reliability of the composite substrate and the accuracy of subsequent processing, providing a physical basis for high-precision alignment.

[0076] like Figure 4 As shown, in a preferred embodiment, step C includes:

[0077] Step C1-1: Provide a monolithic glass core substrate 600 whose dimensions match those of the organic core substrate 000;

[0078] Step C1-2: The monolithic glass core substrate 600 is bonded to the surface of the first conductor circuit layer 410 using double-sided adhesive tape, and then cured by heat baking. After curing, the double-sided adhesive layer 610 is formed. In this way, the monolithic bonding is suitable for the size of the core substrate, simplifying the bonding process and improving mass production efficiency; heat baking and curing ensures a stable bond between the glass core substrate and the core substrate, guaranteeing structural integrity; and the elimination of glass substrate cutting reduces processing steps and the risk of glass breakage, thus lowering production costs.

[0079] In a preferred embodiment, the double-sided adhesive in the first double-sided adhesive layer 610 is a white or light-colored double-sided adhesive with good light transmittance. It can be an epoxy resin film with a certain degree of adhesion commonly used in the electronics industry, or a die-attach film (DAF film) from the semiconductor industry, such as the HR-900 series and HR-300 series DAF films from Linuosen Electronic Materials Co., Ltd. The thickness is selected between 3-20 micrometers to ensure high-precision alignment during TGV processing of the glass core substrate, where the CCD can identify the conductor pattern position of the first conductor line 410 layer. After the glass core substrate is bonded, the double-sided adhesive is cured by thermal baking, ensuring a highly reliable bond between the glass core substrate and the organic core substrate. The material and type of double-sided adhesive are not limited to the above-mentioned materials. The thickness of the glass core substrate can be selected according to requirements, typically 50-250 micrometers. Glass substrates of this thickness have good physical strength and are not easily broken, while also facilitating the processing of TGV holes.

[0080] As an optional implementation, the glass core substrate can be one of alkali-free glass, alkaline glass, alumina glass, borosilicate glass, and quartz glass, with a coefficient of thermal expansion of 1ppm / ℃ to 12ppm / ℃, a thermal conductivity of 1W / m・K to 5W / m・K, and a thickness of 50-250μm. The glass core substrate is then heat-treated to relieve stress. Specifically, a 100-micron-thickness borosilicate glass with a coefficient of thermal expansion of 3ppm / °C can be used as the glass core substrate, and it undergoes annealing to eliminate internal stress, making it less prone to cracking during subsequent laser drilling and wet etching processes.

[0081] This provides a variety of glass material options and defines optimized ranges for their coefficients of thermal expansion and thermal conductivity. These properties help reduce substrate deformation or cracking due to thermal stress under temperature changes, improving the long-term reliability of the substrate. Stress-relief heat treatment of the glass substrate further reduces the inherent brittleness of the glass, significantly reducing the risk of breakage during subsequent processing and thus improving processing yield.

[0082] like Figures 5 to 6 As shown, in a preferred embodiment, step D includes:

[0083] Step D1, Laser-induced modification: A pulsed laser is used to locally irradiate a preset area 620 of the glass core substrate. The laser energy changes the microstructure of the glass in this area, making the chemical etching rate of the modified area significantly higher than that of the unmodified area, thereby achieving anisotropic selective etching in subsequent etching processes.

[0084] Step D2, Etching and Shaping: Select any of the following etching methods to form the TGV hole 630:

[0085] 1. Hydrofluoric acid wet etching: The laser-modified glass core substrate is immersed in hydrofluoric acid etching solution, and the glass in the modified area is completely etched away through chemical reaction to form TGV hole 630.

[0086] 2. Laser ablation method: A high-power pulsed laser is used to directly ablate a predetermined area of ​​the glass core substrate. The laser energy directly ablates the glass material to form a TGV hole 630 in one go. It is suitable for scenarios where the hole diameter accuracy requirement is moderate (±5μm).

[0087] 3. Plasma Etching Method: The glass core substrate is placed in a plasma etching apparatus, and a fluorine-containing gas (such as SF6) is introduced as the etching gas. Under the action of a radio frequency electric field, the plasma generates high-energy particles, which physically bombard and chemically react the modified glass area, forming TGV holes 630 with high sidewall perpendicularity and low surface roughness, suitable for high-precision interconnect requirements. In specific implementation, the size of the TGV hole 630 can be achieved by adjusting the laser parameters in step D1; the diameter of the TGV hole 630 can be between 10 and 100 micrometers.

[0088] As described above, various methods for fabricating TGV vias are provided, particularly for the combined process of laser-induced and hydrofluoric acid wet etching, which enables the production of high-precision, small-diameter TGV vias to meet high-density wiring requirements. Laser-induced modification of glass properties followed by wet etching effectively controls the via shape and sidewall quality, reducing microcracks and improving TGV reliability. Furthermore, by defining the TGV via diameter range as 10-100 micrometers, significantly smaller than the 150-micrometer or larger vias in traditional organic substrates, this directly supports the achievement of high-density wiring capabilities with linewidths / spacings as low as 2 micrometers on glass-core substrates. Precise and small-sized TGV vias are fundamental to achieving reliable electrical connections between the glass and organic layers, crucial for improving the overall substrate's wiring density and signal transmission performance. Simultaneously, alternative methods such as laser ablation or plasma etching are provided, increasing process flexibility and adaptability to accommodate different glass materials and production needs.

[0089] like Figures 5 to 6 As shown, in a preferred embodiment, step E involves removing the double-sided adhesive layer at the bottom of the TGV hole 630 using laser etching, plasma etching, or potassium permanganate oxidation etching. The metallization process includes depositing a metal layer on the surface of the glass core substrate and the inner wall of the TGV hole 630. This provides a variety of efficient and precise double-sided adhesive removal methods—laser, plasma, and strong oxidants—ensuring that the double-sided adhesive residue at the bottom of the TGV hole is completely removed, thereby enabling reliable conduction between the TGV hole and the conductor line 410 of the organic core substrate. Thorough cleaning avoids poor contact or high resistance, which is crucial for achieving highly reliable electrical connections and is essential for subsequent metallization and electroplating, directly affecting the electrical performance of the final product.

[0090] In a preferred embodiment, in step F, the first insulating layer 700 is an organic insulating film. The organic insulating film can be a mature ABF film from Ajinomoto Co., Ltd. in the substrate industry, with its thickness and type selected according to actual needs. In step G, the linewidth / spacing of the fourth conductor circuit layer 720 can be as low as 2μm, meeting the high-density interconnection requirements of high-performance chips. Thus, step F uses a mature ABF film from the substrate industry as the first insulating layer, which is compatible with existing processing technologies, easy to procure, and cost-effective. It can reliably bury the glass core substrate and the third conductor circuit layer, ensuring insulation performance and structural stability. Furthermore, ABF film is a high-performance dielectric material widely used in advanced packaging, possessing excellent dielectric properties, good dimensional stability, and fine circuit processing capabilities, ensuring that the added-layer wiring not only has high density but also excellent electrical performance.

[0091] Example 2

[0092] like Figures 14 to 15 As shown, step C in Embodiment 2, which differs from Embodiment 1, includes:

[0093] Step C2-1: Cut the glass core substrate into multiple corresponding single glass core substrates 900 according to the size of the packaging substrate unit in the preset drawing;

[0094] Step C2-2: The single glass core substrate 900 is attached one by one to the preset area of ​​the organic core substrate 000 using double-sided adhesive. Multiple single glass core substrates 900 are arranged at intervals and cured by heat baking. After the double-sided adhesive is cured, the second double-sided adhesive layer 910 is formed.

[0095] As described above, the glass core substrate is cut into individual substrate sizes according to the size of a single unit of the packaging substrate, thereby enabling the individual glass core substrates to be bonded to the surface of the organic core substrate. This greatly reduces glass breakage caused by the brittleness of the glass substrate and significantly improves the processing yield. The size of a single glass core is flexible, ranging from a few millimeters to 100 millimeters, adapting to the needs of different specifications of packaging substrate units, and has strong versatility. Figure 14-15 The image shows a single glass core substrate bonded to the surface of an organic substrate 000. The second double-sided adhesive layer 910 uses the same type of double-sided adhesive as the first double-sided adhesive layer 610.

[0096] Example 3

[0097] like Figure 13 As shown, Embodiment 3 is a composite organic substrate structure with a glass core layer, fabricated using the method of Embodiment 1. This composite organic substrate includes:

[0098] There is an organic core substrate 000, which has multiple conductor lines. The upper and lower surfaces are respectively provided with a first conductor line layer 410 and a second conductor line layer 510. The line groove of the first conductor line layer 410 is filled with organic resin 430, and the top of the first conductor line layer 410 is flush with the top of the organic resin 430.

[0099] Double-sided adhesive layer, attached to the flat upper surface of the organic core substrate 000;

[0100] The glass core substrate is fixedly connected to the organic core substrate 000 by the double-sided adhesive layer. The glass core substrate is provided with a first through hole 640 formed after removing the bottom double-sided adhesive layer of the TGV hole 630. The first through hole 640 is filled with metal to form a first conductive filling hole 650. The first conductive filling hole 650 is connected to the first conductor circuit layer 410.

[0101] The third conductor circuit layer 660 is disposed on the upper surface of the glass core substrate and is electrically connected to the first conductive filling hole 650.

[0102] The first insulating layer 700 is pressed onto the surface of the glass core substrate and the third conductor circuit layer 660, completely burying both.

[0103] The fourth conductor circuit layer 720 is disposed on the surface of the first insulating layer 700 and is connected to the third conductor circuit layer 660 through the second conductive filling hole 710.

[0104] Solder resist layers are respectively disposed on the surfaces of the second conductor circuit layer 510 and the fourth conductor circuit layer 720;

[0105] The solder ball bump array 820 is located at the solder mask window of the solder mask layer corresponding to the second conductor line layer 510 and is used for chip packaging docking.

[0106] Example 4

[0107] like Figure 13 As shown, a chip packaging structure is an example of chip packaging based on the composite organic substrate in Embodiment 3 of this case.

[0108] A chip packaging structure includes: the composite organic substrate of Example 3, and

[0109] The chip body 830 is mounted on the surface of the solder ball bump array 820 of the composite organic substrate; the pins on the lower surface of the chip body 830 are connected to the solder ball bump array 820 to realize the electrical interconnection between the chip body 830 and the composite organic substrate.

[0110] Bottom filler 840 is filled in the gap between the chip body 830 and the composite organic substrate to enhance the mechanical connection strength between the chip and the substrate and improve the impact resistance and thermal cycling resistance.

[0111] Solder ball 920 is located at the solder mask window corresponding to the second conductor line layer 510 of the composite organic substrate, and is used to interface the packaged chip structure with the external PCB motherboard.

[0112] In summary, this invention discloses a method and structure for fabricating a composite organic packaging substrate with a glass core layer, belonging to the field of semiconductor chip packaging. The method first prepares an organic core substrate with multilayer conductor lines, and then fills and flattens the top layer of the circuit grooves with resin. Next, a whole or single glass core substrate is bonded to the surface of the organic core substrate using high-transmittance double-sided adhesive. Subsequently, TGV holes are processed on the glass core substrate, and after removing the double-sided adhesive from the bottom of the holes, metallization and electroplating are performed to fill the holes, achieving conductivity between the glass core and the organic core circuitry. Finally, an insulating film is laminated, a fine circuit layer is added, and a solder resist layer and solder ball bump array are fabricated. The corresponding packaging substrate consists of an organic core substrate, a glass core substrate, and multilayer circuitry layers, which can further encapsulate chips to form a complete structure. This invention, through an "organic core + glass core" composite structure, achieves high-density wiring with linewidth / spacing as low as 2μm using glass core TGV technology, while mitigating the brittleness of glass by relying on the organic core substrate. Simultaneously, high-transmittance materials are used to achieve precise alignment, improving substrate wiring density, processing yield, and mass production feasibility, thus meeting the needs of high-performance chip packaging.

[0113] As stated above, this case protects a method and structure for manufacturing a composite organic packaging substrate with a glass core layer. All technical solutions that are the same as or similar to this case should be considered to fall within the scope of protection of this case.

Claims

1. A method for fabricating a composite organic encapsulation substrate with a glass core layer, characterized in that, Includes the following steps: Step A: Prepare an organic core substrate (000) with multilayer conductor lines, wherein a first conductor line layer (410) and a second conductor line layer (510) are formed on the upper and lower surfaces of the organic core substrate (000), respectively. Step B: Pre-treatment of the upper surface of the organic core substrate (000): The grooves between the lines of the first conductor line layer (410) of the organic core substrate (000) are filled to form a flat surface organic core substrate (000). Step C: Provide a glass core substrate and attach the glass core substrate to the upper surface of the organic core substrate (000) using a double-sided adhesive layer; Step D: Form TGV holes (630) on the glass core substrate. Step E: Remove the double-sided adhesive layer at the bottom of the TGV hole (630) to form a first through hole (640) to expose the underlying first conductor line layer (410), and perform metallization and electroplating filling on the upper surface of the glass core substrate and inside the first through hole (640) to form a first conductive filling hole (650) and a third conductor line layer (660) that are connected to the first conductor line layer (410). Step F: An insulating film is laminated onto the surface of the third conductor line layer (660) and the upper surface of the glass core substrate to form a first insulating layer (700), so as to completely embed the third conductor line layer (660) and the glass core substrate therein; Step G: Form a second conductive filling hole (710) and a fourth conductor circuit layer (720) on the surface of the first insulating layer (700). Step H: Form corresponding solder resist layers on the surfaces of the second conductor circuit layer (510) and the fourth conductor circuit layer (720); each solder resist layer has multiple solder resist openings; Step I: Fabricate a solder ball bump array (820) for chip packaging at the solder mask opening formed in the second conductor line layer (510).

2. The method for fabricating a composite organic encapsulation substrate with a glass core layer according to claim 1, characterized in that, Step A, fabricating the organic core substrate (000) with multilayer conductor lines, includes the following steps: Step A1: A double-sided copper-clad laminate is used as the initial substrate to serve as the core board layer (100); the core board layer (100) has conductor circuit layers formed on its upper and lower surfaces, and a third conductive filling hole (103) is formed to connect the two conductor circuit layers on the upper and lower surfaces. Step A2: Add layers to the upper and lower surfaces of the core board layer (100), adding one or more dielectric layers and conductor lines on each side to form an organic core substrate (000) with the first conductor line layer (410) and the second conductor line layer (510).

3. The method for fabricating a composite organic encapsulation substrate with a glass core layer according to claim 1, characterized in that, Step B includes: Step B1: By printing or roller coating, organic resin (430) is filled into the grooves between the lines of the first conductor line layer (410) of the organic core substrate (000); Step B2: After filling, perform heat curing treatment, and then level the surface by brushing so that the top of the first conductor circuit layer (410) is flush with the top of the organic resin (430).

4. The method for fabricating a composite organic encapsulation substrate with a glass core layer according to claim 1, characterized in that, Step C includes: Step C1-1: Provide a monolithic glass core substrate (600) with dimensions matching the organic core substrate (000). Step C1-2: Use double-sided adhesive to attach the whole glass core substrate (600) to the surface of the first conductor circuit layer (410) and heat-baking to cure it. After the double-sided adhesive is cured, the first double-sided adhesive layer (610) is formed.

5. The method for fabricating a composite organic encapsulation substrate with a glass core layer according to claim 1, characterized in that, Step C includes: Step C2-1: Cut the glass core substrate into multiple single glass core substrates (900) according to the unit size of the packaging substrate in the preset drawing. Step C2-2: The single glass core substrate (900) is attached one by one to the preset area of ​​the organic core substrate (000) using double-sided adhesive. Multiple single glass core substrates (900) are arranged at intervals and cured by heat baking. After the double-sided adhesive is cured, a second double-sided adhesive layer (910) is formed.

6. The manufacturing method according to claim 1, characterized in that, The double-sided adhesive layer has a light transmittance of more than 70%, and is made of epoxy resin film or DAF film with a thickness of 3-20μm; the glass core substrate is made of one of alkali-free glass, alkaline glass, alumina glass, borosilicate glass or quartz glass, with a coefficient of thermal expansion of 1ppm / ℃~12ppm / ℃, a thermal conductivity of 1W / m・K~5W / m・K, and a thickness of 50-250μm.

7. The manufacturing method according to claim 1, characterized in that, Step D includes: Step D1: Use laser-induced method to locally change a preset area of ​​the glass core substrate; Step D2: Use hydrofluoric acid for wet etching, laser ablation, or plasma etching to remove the glass at the modified site and form a TGV hole.

8. The manufacturing method according to claim 1, characterized in that, In step E, the double-sided adhesive layer at the bottom of the TGV hole (630) is removed by laser etching, plasma etching or potassium permanganate oxidation etching; the metallization process includes depositing a metal layer on the surface of the glass core substrate and the inner wall of the first through hole (640).

9. The manufacturing method according to claim 1, characterized in that, In step F, the first insulating layer (700) is an ABF film.

10. A composite organic substrate with a glass core layer, characterized in that, The product is manufactured according to the manufacturing method of any one of claims 1-9, comprising: An organic core substrate (000) has multiple conductor lines, and a first conductor line layer (410) and a second conductor line layer (510) are respectively provided on the upper and lower surfaces. The line grooves of the first conductor line layer (410) are filled with organic resin (430), and the top of the first conductor line layer (410) is flush with the top of the organic resin (430). Double-sided adhesive layer, attached to the flat upper surface of the organic core substrate (000); A glass core substrate is fixedly connected to an organic core substrate (000) by the double-sided adhesive layer. The glass core substrate has a through hole (640) formed after removing the double-sided adhesive layer at the bottom of the TGV hole (630). The first through hole (640) is filled with metal to form a first conductive filling hole (650). The first conductive filling hole (650) is connected to the first conductor circuit layer (410). The third conductor circuit layer (660) is disposed on the upper surface of the glass core substrate and is electrically connected to the first conductive filling hole (650); The first insulating layer (700) is pressed onto the surface of the glass core substrate and the third conductor circuit layer (660), completely burying both. The fourth conductor circuit layer (720) is disposed on the surface of the first insulating layer (700) and is connected to the third conductor circuit layer (660) through the second conductive filling hole (710); Solder resist layers are respectively disposed on the surfaces of the second conductor circuit layer (510) and the fourth conductor circuit layer (720); The solder ball bump array (820) is located at the solder mask opening of the solder mask layer corresponding to the second conductor line layer (510) and is used for chip packaging docking.

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