Light-emitting device, preparation method thereof, backlight module, display panel and display device

Abstract

A light emitting device includes a substrate; a first semiconductor layer, a light emitting layer, and a second semiconductor layer which are sequentially stacked on the substrate; a first electrode provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; and a transparent antistatic layer provided on a side of the substrate distal from the first semiconductor layer.

Description

Light-emitting devices and their fabrication methods, backlight modules, display panels, and display devices. Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a light-emitting device and its preparation method, a backlight module, a display panel, and a display device. Background Technology

[0002] With the development of LED technology, backlights using sub-millimeter or even micrometer-scale LEDs have become widely used. This allows backlights that utilize transmissive displays to achieve the same contrast ratio as OLED displays, while retaining the technological advantages of LCDs, thus enhancing display quality and providing users with a superior visual experience.

[0003] Summary of the Invention

[0004] On one hand, a light-emitting device is provided. The light-emitting device includes: a substrate; a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked on the substrate; a first electrode disposed on the first semiconductor layer; a second electrode disposed on the second semiconductor layer; and a transparent antistatic layer disposed on the side of the substrate away from the first semiconductor layer.

[0005] In some embodiments, the transparent antistatic layer comprises a transparent metal oxide material.

[0006] In some embodiments, the transparent metal oxide material is doped with conductive particles.

[0007] In some embodiments, the transparent antistatic layer comprises a transparent insulating material and conductive particles doped in the transparent insulating material.

[0008] In some embodiments, the conductive particles include at least one of metal particles, conductive polymers, and carbon materials.

[0009] In some embodiments, the transparent antistatic layer comprises a dissipative material.

[0010] In some embodiments, the transparent antistatic layer is doped with scattering particles.

[0011] In some embodiments, the material of the scattering particles may be at least one of polystyrene resin, polymethyl methacrylate, polycarbonate, and silicon dioxide.

[0012] In some embodiments, the light-emitting device further includes: a first Bragg reflective layer disposed on the substrate and covering the first semiconductor layer, the light-emitting layer and the second semiconductor layer; and / or, the first electrode and the second electrode are metal electrodes.

[0013] In some embodiments, the light-emitting device further includes a second Bragg reflector layer disposed between the transparent antistatic layer and the substrate.

[0014] In some embodiments, the second Bragg reflector layer includes a bandpass filter; the emission center wavelength of the emission layer is located in the transmission band of the bandpass filter, and the emission bandwidth of the emission layer is smaller than the transmission bandwidth of the bandpass filter.

[0015] In some embodiments, the transparent antistatic layer is a semi-transparent and semi-reflective film, and / or the transparent antistatic layer includes: alternatingly stacked high refractive index layers and low refractive index layers; wherein at least one high refractive index layer or at least one low refractive index layer is a conductive layer.

[0016] In some embodiments, the transparent antistatic layer includes a bandpass filter; the light emission center wavelength of the light-emitting layer is located in the light transmission band of the bandpass filter, and the light emission bandwidth of the light-emitting layer is smaller than the light transmission bandwidth of the bandpass filter.

[0017] In some embodiments, the layer furthest from the substrate among the alternately stacked high-refractive-index and low-refractive-index layers is a conductive layer.

[0018] In some embodiments, the light-emitting device further includes: a light pattern optimization layer disposed between the transparent antistatic layer and the substrate, the light pattern optimization layer being used to adjust the angle of the emitted light from the light-emitting device.

[0019] In some embodiments, the light pattern optimization layer includes scattering particles.

[0020] In some embodiments, the thickness of the transparent antistatic layer ranges from 100nm to 1000nm.

[0021] On the other hand, a method for fabricating a light-emitting device is provided. The method includes: sequentially growing a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate; forming a first electrode on the first semiconductor layer; forming a second electrode on the second semiconductor layer; and forming a transparent antistatic layer on the side of the substrate away from the first semiconductor layer.

[0022] In another aspect, a display panel is provided, comprising: a driving substrate; and a plurality of light-emitting devices as described in any of the above embodiments located on the driving substrate.

[0023] In another aspect, a backlight module is provided, comprising: a substrate; and a plurality of light-emitting devices as described in any of the above embodiments located on the substrate. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual process of the method, etc. involved in the embodiments of this disclosure.

[0025] Figure 1 is a structural diagram of a display device according to some embodiments;

[0026] Figure 2 is a structural diagram of a display panel according to some embodiments;

[0027] Figure 3 is a structural diagram of another display device according to some embodiments;

[0028] Figure 4 is a structural diagram of a backlight module according to some embodiments;

[0029] Figure 5 is a structural diagram of another backlight module according to some embodiments;

[0030] Figure 6 is a structural diagram of another display panel according to some embodiments;

[0031] Figure 7 is a structural diagram of a light-emitting device during the die bonding process according to some embodiments;

[0032] Figure 8 is a structural diagram of the die bonding process of another light-emitting device according to some embodiments;

[0033] Figure 9A is a structural diagram of a light-emitting device according to some embodiments;

[0034] Figure 9B is a structural diagram of another light-emitting device according to some embodiments;

[0035] Figure 9C is a structural diagram of another light-emitting device according to some embodiments;

[0036] Figure 10 is a structural diagram of another light-emitting device according to some embodiments;

[0037] Figure 11 is a structural diagram of another light-emitting device according to some embodiments;

[0038] Figure 12 is a structural diagram of another light-emitting device according to some embodiments;

[0039] Figure 13 is a structural diagram of another light-emitting device according to some embodiments;

[0040] Figure 14 is a flowchart of a method for manufacturing a light-emitting device according to some embodiments. Detailed Implementation

[0041] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0042] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0043] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0044] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. The term "connected" should be interpreted broadly; for example, a "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection via an intermediate medium. The term "coupled," for example, indicates that two or more components have direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0045] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0046] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0047] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0048] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0049] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0050] Some embodiments of this disclosure provide a display device 1000, which can be any device that displays images, whether moving (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, the embodiments are contemplated to be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants, handheld or portable computers, GPS receivers / navigators, cameras, video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0051] In other examples, the display device 1000 may also be a product that does not have image display capabilities. For example, the display device 1000 may be an image display panel, etc.

[0052] The embodiments disclosed herein do not further limit the display device 1000. The following description uses a product with image display function as an example to illustrate the concept.

[0053] In some examples, the aforementioned display device 1000 may be an LCD (Liquid Crystal Display).

[0054] In some examples, as shown in FIG1, FIG1 is a structural diagram of a display device according to some embodiments. As shown in FIG1, the display device 1000 includes a frame 100, a cover plate 200, a display panel 300, a circuit board 400, and other electronic components including a camera.

[0055] The frame 100 has a U-shaped longitudinal section. The display panel 300, circuit board 400, and other electronic components, including a camera, are housed within the frame 100. The circuit board 400 is located between the display panel 300 and the frame 100. The cover plate 200 is located on the light-emitting side of the display panel 300. The light-emitting side of the display panel 300 refers to the side of the display panel 300 used for displaying images, and the side of the display panel 300 opposite to its light-emitting side is the backlight side of the display panel 300.

[0056] For example, the circuit board 400 is located on the backlight side of the display panel 300 and is electrically connected to the display panel 300. The circuit board 400 is used to provide driving signals to the display panel 300, thereby ensuring the normal display of the display panel 300.

[0057] For example, the display panel 300 described above includes a light-emitting device 10. For instance, the light-emitting device 10 may include an LED (Light Emitting Diode).

[0058] For example, the display panel 300 described above can be an LCD (Liquid Crystal Display) display panel.

[0059] For example, the display panel 300 can be driven by either a passive matrix (PM) or an active matrix (AM) method. When the display panel 300 is driven by an active matrix method, it can be, for example, a thin-film transistor liquid crystal display (TFT-LCD).

[0060] For example, as shown in FIG2, the display panel 300 may include an array substrate 310, a liquid crystal layer 320, and a color filter substrate 330 stacked in sequence.

[0061] For example, the array substrate 310 may include a plurality of pixel electrodes 311 and a plurality of pixel driving circuits 312. The plurality of pixel electrodes 311 are electrically connected to the plurality of pixel driving circuits 312 in a one-to-one correspondence, and the pixel driving circuits 312 provide pixel voltages to the corresponding pixel electrodes 311.

[0062] For example, the display panel 300 also includes a common electrode.

[0063] The location of the common electrode is related to the display type of the display panel 300. In the embodiments of this disclosure, the display type of the display panel 300 can be ADS (Advanced Super Dimension Switch), IPS (In-Plane Switching), VA (Vertical Alignment), FFS (Fringe Field Switching), TN (Twisted Nematic), etc. Therefore, there are multiple locations for the common electrode in the embodiments of this disclosure.

[0064] For example, when the display panel 300 is an IPS display type, the common electrode can be disposed on the array substrate 310 and disposed on the same layer as the pixel electrode 311. Thus, the common electrode and the pixel electrode 311 can be formed simultaneously in one patterning process, thereby simplifying the manufacturing process of the display panel 300.

[0065] For example, when the display panel 300 is an FFS or ADS display type, the common electrode can be disposed on the array substrate 310 and located on a different layer from the pixel electrode 311. This avoids interference between the pixel voltage signal on the pixel electrode 311 and the common voltage on the common electrode, improving the signal accuracy of both the pixel voltage signal and the common voltage.

[0066] For example, if the display panel 300 is a TN or VA display type, the common electrode can be disposed on the color filter substrate 330.

[0067] For example, the liquid crystal layer 320 includes a plurality of liquid crystal molecules. For instance, taking the display panel 300 as a TN display type, an electric field can be formed between the pixel electrode 311 and the common electrode, and the liquid crystal molecules located between the pixel electrode 311 and the common electrode can be deflected under the action of the electric field.

[0068] For example, the color filter substrate 330 includes various color filters. For instance, when the light incident on the color filter is white light, the color filter may include a red filter, a green filter, and a blue filter. For example, a red filter allows only red light in the incident light to pass through, a green filter allows only green light in the incident light to pass through, and a blue filter allows only blue light in the incident light to pass through. Similarly, when the light incident on the color filter is blue light, the color filter may include a red filter and a green filter.

[0069] Of course, the color filter substrate 330 also includes a black matrix. The black matrix can be used to prevent light mixing.

[0070] In some embodiments, as shown in FIG3, the display device 1000 further includes a backlight module 500. A display panel 300 is stacked on the light-emitting side of the backlight module 500. The backlight module 500 provides backlight to the display panel 300. The light-emitting side of the backlight module 500 refers to the side of the backlight module 500 from which light rays are emitted.

[0071] Understandably, the backlight provided by the backlight module 500 can pass through the array substrate 310 and be incident on the liquid crystal molecules in the liquid crystal layer 320. Under the influence of the electric field formed between the pixel electrode 311 and the common electrode, the liquid crystal molecules undergo a certain degree of flipping, thereby changing the polarization direction of the light passing through the liquid crystal molecules. The light then passes through the color filter substrate 330 and exits. This exited light includes various colors of light, such as red, green, and blue light, and the various colors of light work together to enable the display device 1000 to display.

[0072] For example, the backlight module 500 can be a direct-lit backlight module or an edge-lit backlight module. Figure 4 shows an edge-lit backlight module, and Figure 5 shows a direct-lit backlight module.

[0073] As shown in Figures 4 and 5, edge-lit backlight modules are generally thinner and lighter than direct-lit backlight modules. However, direct-lit backlight modules can independently control the brightness of different areas, thus providing localized backlighting and ultra-high contrast backlighting.

[0074] The following section uses the 500 backlight module as an example, which is a direct-lit backlight module, to introduce the backlight module.

[0075] In some embodiments, as shown in FIG4, the backlight module 500 includes a substrate 20 and a plurality of light-emitting devices 10 located on the substrate 20. The light-emitting devices 10 may be LED light-emitting devices.

[0076] The substrate 20 includes a base plate 201 and a plurality of side plates 202 disposed perpendicular to the base plate 201.

[0077] In some examples, as shown in Figure 4, the backlight module 500 also includes a light guide plate 203 (LGP) located on the base plate 201. The light guide plate 203 has a plate-like structure, and at least one side of the light guide plate 203 is the light incident surface of the light guide plate 203. The light-emitting device 10 is disposed on the light incident surface of the light guide plate 203.

[0078] Furthermore, one light-emitting surface of the light-emitting device 10 is positioned opposite to the light-incident surface of the light guide plate 203, thereby allowing the light emitted by the light-emitting device 10 to enter the interior of the light guide plate 203 from the side. Then, through the dot pattern at the bottom of the light guide plate 203, the total internal reflection of the light inside the light guide plate 203 is disrupted, thereby allowing some of the light inside the light guide plate 203 to exit from the top of the light guide plate 203.

[0079] In other embodiments, the display panel 300 can be used directly for image display. In this case, the display device 1000 is an active light-emitting display device. This type of display device is commonly used in commercial displays, such as traffic management command center displays or commercial plaza displays.

[0080] Understandably, since the display panel 300 can emit light itself, there is no need to configure a separate backlight module.

[0081] For example, as shown in FIG6, the display panel 300 includes a driving substrate 301 and a plurality of light-emitting devices 10 located on the driving substrate 301.

[0082] For example, the light-emitting device 10 can be an LED light-emitting device, such as a sub-millimeter light-emitting diode (Mini LED) with a size of 100μm to 500μm, or a micro light-emitting diode (Micro LED) with a size of less than 100μm, or a larger LED.

[0083] For example, multiple light-emitting devices 10 emit light under the control of a driving substrate 301.

[0084] It is understood that there are various ways for the driving substrate 301 to control the working state of the multiple light-emitting devices 10, which can be set according to the actual situation. The embodiments disclosed herein do not limit this.

[0085] In some examples, as shown in Figure 6, the display panel 300 also includes a plurality of chips 302, which can be arranged in multiple rows and columns. Each chip 302 is electrically connected to at least one light-emitting device 10.

[0086] For example, a chip 302 is electrically connected to a light-emitting device 10. The chip 302 controls the operating state of the light-emitting device 10 electrically connected to it.

[0087] For example, as shown in Figure 6, a chip 302 is electrically connected to multiple light-emitting devices 10. The chip 302 controls the operating state of the multiple light-emitting devices 10 electrically connected to it.

[0088] It is understandable that each chip 302 works independently, thereby controlling the different operating states of the different light-emitting devices 10 that are electrically connected to different chips.

[0089] For example, when a chip 302 is electrically connected to multiple light-emitting devices 10, there are various ways to electrically connect the multiple light-emitting devices 10 to the chip 302, which can be set according to actual needs. The embodiments of this disclosure do not limit this.

[0090] For example, multiple light-emitting devices 10 are individually and directly electrically connected to the same chip 302.

[0091] For example, as shown in Figure 6, at least two light-emitting devices 10 are connected in series to form a light-emitting device group 10A, and at least one light-emitting device group 10A is electrically connected to a chip 302.

[0092] By using the above configuration, the chip 302 can be used to control the light emission of multiple light-emitting devices 10, thereby facilitating the control of the light-emitting devices 10.

[0093] With the improvement of Mini LED die bonding technology and the need for cost reduction, the light-emitting device 10 is becoming smaller and smaller. The inventors of this disclosure have found that the smaller the light-emitting device 10 is, that is, the smaller the light-emitting area and size of the light-emitting device 10, the smaller the corresponding electrostatic discharge (ESD) capability of the light-emitting device 10.

[0094] Furthermore, the light-emitting device 10 includes a P-electrode layer, an N-electrode layer, and a light-emitting layer disposed between the P-electrode layer and the N-electrode layer. The P-electrode layer, the N-electrode layer, and the light-emitting layer disposed between the P-electrode layer and the N-electrode layer form a PN junction. Changes in the applied voltage of the PN junction cause the "entry" and "extraction" of electrons and holes in the barrier region, resulting in a change in the amount of space charge in the barrier region with the applied voltage, exhibiting capacitive characteristics. In the PN junction, this capacitive effect is called barrier capacitance.

[0095] Under reverse bias, the barrier capacitance C B The square of the reverse bias V R The relation is:

[0096] Where A is the PN junction area, Q is the electron charge, N is the impurity concentration on the lightly doped side of the semiconductor, E is the dielectric constant of the semiconductor, and ε0 is the vacuum dielectric constant. D This is the contact potential difference. V R This is a reverse bias voltage.

[0097] When two light-emitting devices 10 originate from adjacent positions on the same epitaxial wafer, that is, when two light-emitting devices 10 are fabricated on the same wafer, under the same reverse bias voltage V R Measuring the barrier capacitance C B Then N and V D V R ε, ε0, and q can be considered as fixed constants. From the above formula, it can be seen that the barrier capacitance C... BIt is positively correlated with the PN junction area A. That is, as the PN junction area A increases, the barrier capacitance C increases. B This also increases the resistance to the diffusion of majority carriers to the other side, allowing the light-emitting device 10 to withstand higher reverse voltages. Theoretically, as the size increases, the electrostatic charge per unit area decreases, and the probability of electrostatic failure decreases accordingly. In other words, the larger the size of the light-emitting device 10, the stronger the anti-electrostatic discharge. Conversely, the smaller the size of the light-emitting device 10, the weaker the anti-electrostatic discharge.

[0098] Furthermore, when the light-emitting device 10 is applied to the display panel 300, the light-emitting device 10 is bonded to the driving substrate 301 by a die-bonding film attached to its back side.

[0099] Die bonding is a process in which a wafer is bonded to a designated area of ​​a die bonder using a colloid to form an electrical path.

[0100] Specifically, referring to Figures 7 and 8, the light-emitting device 10 is attached to the die-bonding film 01 (e.g., a UV film). With the ejector pin 02, UV film 01, light-emitting device 10, and driving substrate 301 in the same vertical position, one light-emitting device 10 on the UV film is aligned with the pad on the driving substrate 301 for electrically connecting the light-emitting device 10. Then, the ejector pin moves downward to lift the UV film, causing the light-emitting device 10 on the UV film to be die-bonded to the pad on the driving substrate 301 for electrically connecting the light-emitting device 10. Then, the second light-emitting device 10 is die-bonded to the pad on the driving substrate 301 in the same manner. The above process is repeated until the entire pad on the driving substrate 301 is die-bonded.

[0101] When the light-emitting device 10 is applied to the backlight module 500, the light-emitting device 10 is die-bonded onto the substrate 20 by a die-bonding film attached to its back side. Specifically, the light-emitting device 10 is attached to the die-bonding film (e.g., a UV film). With the ejector pin, UV film, light-emitting device 10, and substrate 20 in the same vertical position, one light-emitting device 10 on the UV film is aligned with the pad on the substrate 20 for electrically connecting the light-emitting device 10. Then, the ejector pin moves downward to lift the UV film, causing the light-emitting device 10 on the UV film to be die-bonded to the pad on the substrate 20 for electrically connecting the light-emitting device 10. Then, the second light-emitting device 10 is die-bonded to the pad on the substrate 20 for electrically connecting the second light-emitting device 10 in the same manner. The above process is repeated until the pads on the entire substrate 20 are die-bonded.

[0102] During the high-speed die bonding process, as the ejector pin moves rapidly and comes into contact with the die bonding film (e.g., UV film), electrostatic charges will continuously accumulate on the die bonding film and on the light-emitting device 10 located on the die bonding film. When the electrostatic charges accumulate to a certain level, a charging and discharging phenomenon may occur, which may damage the light-emitting device 10.

[0103] Furthermore, in COG (Chip on Glass, a technology that bonds chips to glass, reducing the number of traces and layers on a PCB and is widely used in LCD display devices) products, the glass substrate has weak ESD capabilities, and the accumulation of static electricity during the die bonding process can damage the substrate circuit layers (e.g., the aforementioned driving substrate 301).

[0104] Based on this, some embodiments of this disclosure provide a light-emitting device 10, as shown in FIG9A.

[0105] As shown in Figure 9A, the light-emitting device 10 includes a substrate 11.

[0106] For example, the substrate 11 can be selected from one of sapphire substrate, sapphire composite substrate, silicon substrate, silicon carbide substrate, gallium nitride substrate, and zinc oxide substrate.

[0107] As shown in Figure 9A, the light-emitting device 10 further includes a first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 sequentially stacked on the substrate 11. The first semiconductor layer 12, the light-emitting layer 13, and the second semiconductor layer 14 can be referred to as epitaxial wafers.

[0108] For example, as shown in FIG9A, at least a portion of the first semiconductor layer 12 and the second semiconductor layer 14 are offset along the thickness direction of the light-emitting device 10. That is, a portion of the light-emitting layer 13 and the second semiconductor layer 14 is removed to expose the first semiconductor layer 12.

[0109] For example, the material of the first semiconductor layer 12 can be n-GaN (n-type gallium nitride). The first semiconductor layer 12 is used to provide electrons.

[0110] For example, the light-emitting layer 13 is located on the side of the first semiconductor layer 12 away from the substrate 11.

[0111] For example, the material of the light-emitting layer 13 can be a multiple quantum well (MQW).

[0112] For example, the second semiconductor layer 14 is located on the side of the light-emitting layer 13 away from the first semiconductor layer 12.

[0113] For example, the material of the second semiconductor layer 14 can be p-GaN (p-type gallium nitride). The second semiconductor layer 14 is used to provide holes.

[0114] For example, by applying different voltages to the first semiconductor layer 12 and the second semiconductor layer 14, a voltage difference is generated between the first semiconductor layer 12 and the second semiconductor layer 14. The light-emitting layer 13 emits light under the action of this voltage difference, and the light can be, for example, natural light.

[0115] As shown in Figure 9A, the light-emitting device 10 further includes a first electrode 15 and a second electrode 16. The first electrode 15 is disposed on the first semiconductor layer 12; the second electrode 16 is disposed on the second semiconductor layer 14.

[0116] For example, the first electrode 15 can be an N electrode and the second electrode 16 can be a P electrode.

[0117] For example, the materials of the first electrode 15 and the second electrode 16 may both include indium tin oxide.

[0118] For example, as shown in FIG9A, the first electrode 15 includes a first sub-electrode 151 and a second sub-electrode 152. The first sub-electrode 151 and the second sub-electrode 152 can be an integral structure.

[0119] For example, as shown in FIG9A, the second electrode 16 includes a third sub-electrode 161 and a fourth sub-electrode 162. The third sub-electrode 161 and the fourth sub-electrode 162 can be an integral structure.

[0120] For example, the light-emitting device 10 in this embodiment of the present disclosure has a flip-chip structure. The light emitted by the light-emitting layer 13 passes through the substrate 11 and exits.

[0121] In some examples, as shown in FIG9A, the light-emitting device 10 further includes a transparent antistatic layer 17 disposed on the side of the substrate 11 away from the first semiconductor layer 12.

[0122] "Transparent" means that light can pass through a transparent structure. For example, the light transmittance of the transparent antistatic layer 17 in this disclosure can reach 80% or more. The light emitted by the light-emitting layer 13 can pass through the transparent antistatic layer 17 and exit from the side of the transparent antistatic layer 17 away from the light-emitting layer 13.

[0123] For example, the material of the transparent antistatic layer 17 includes at least one of a conductive metal and a conductive metal oxide. For instance, the conductive metal includes aluminum, silver, copper, titanium, molybdenum, etc. The conductive metal oxide includes at least one of indium zinc oxide, indium tin oxide, zinc oxide, and aluminum-doped zinc oxide.

[0124] In this embodiment, by providing a transparent antistatic layer 17, the static electricity generated by the light-emitting device 10 during operation can be released through the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10 and ensuring the luminous efficiency of the light-emitting device 10.

[0125] Furthermore, it is understood that during the high-speed die bonding process, the transparent antistatic layer 17 disposed in the light-emitting device 10 comes into contact with the die bonding film (e.g., UV film). Thus, during the high-speed die bonding process, the electrostatic charge accumulated on the die bonding film (e.g., UV film) is released in multiple stages to the transparent antistatic layer 17 of the multiple light-emitting devices 10 during the fixing process. This reduces the probability of charging and discharging phenomena easily occurring when there is a large amount of electrostatic charge accumulated on the die bonding film (e.g., UV film). It improves the problem that when there is a large amount of electrostatic charge accumulated on the die bonding film (e.g., UV film), charging and discharging phenomena are easily occurring, thereby causing damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product.

[0126] In some embodiments, the transparent antistatic layer 17 comprises a transparent metal oxide material.

[0127] For example, the transparent metal oxide material may be at least one of indium tin oxide, aluminum zinc oxide, or indium zinc oxide.

[0128] Indium tin oxide (ITO) is mainly composed of a mixture of In₂O₃ and SnO₂, exhibiting good light transmittance and electrical conductivity. Indium zinc oxide (IZO) also possesses good light transmittance and electrical conductivity. Taking indium tin oxide as an example, an ITO thin film can be deposited by sputtering, such as using PVD (Physical Vapor Deposition), to form a transparent antistatic layer 17. The transparent antistatic layer 17 made of either indium tin oxide or indium zinc oxide can reduce light obstruction, thereby improving the light extraction efficiency of the light-emitting device 10.

[0129] It should be noted that indium tin oxide or indium zinc oxide may exist in various forms, and the embodiments disclosed herein do not limit the form of indium tin oxide or indium zinc oxide, that is, they include all forms. Taking indium tin oxide as an example, it includes amorphous indium tin oxide and polycrystalline indium tin oxide.

[0130] In this embodiment, the transparent antistatic layer 17 includes a transparent metal oxide material. The transparent antistatic layer 17 can release the static electricity generated by the light-emitting device 10 during operation, thereby improving the ESD resistance of the light-emitting device 10. Moreover, since indium tin oxide and indium zinc oxide have good light transmittance and conductivity, their impact on light blocking is minimal, thus avoiding affecting the light output efficiency of the light-emitting device 10.

[0131] In some embodiments, as shown in FIG10, the transparent metal oxide material is doped with conductive particles 171.

[0132] It should be noted that the actual size of the conductive particles 171 is extremely small. For clarity, the dimensions of each structure in the accompanying drawings of the embodiments of this disclosure are enlarged and do not represent the actual size and proportion. Furthermore, Figure 10 only shows the dispersion state of the conductive particles 171 in the transparent antistatic layer 17. The sizes of the multiple conductive particles 171 can be the same or different, and the embodiments of this disclosure do not limit this.

[0133] It should be noted that, in the embodiments of this disclosure, "particle" refers to a geometric body with a characteristic shape within a certain size range. This "certain size" is typically on the order of nanometers to millimeters. Therefore, the aforementioned diffused particles refer to particles with a relatively small size, and their specific microscopic shape is not limited to spheres; they can have various shapes without specific limitation.

[0134] For example, conductive particles 171 are uniformly distributed in the transparent metal oxide material of the transparent antistatic layer 17. Here, "uniformly distributed" means that after the area where the conductive particles 171 are located is divided into multiple unit areas, the number of conductive particles 171 in each unit area is approximately the same; and conductive particles 171 of various particle sizes are distributed in each unit area.

[0135] For example, the microscopic shape of the conductive particles 171 includes one or more of the following shapes: conical, pyramidal, columnar, linear, rod-shaped, needle-shaped, spherical, scale-like, and dendritic. The embodiments of this disclosure are not limited in this regard.

[0136] Furthermore, the conductive particles 171 may have a size of less than 1 micrometer, or less than 500 nanometers, or less than 100 nanometers in at least one dimension. The conductive particles 171 may have an elongated structure, such as one or more of the following: elongated cone, pyramidal axis, columnar, linear, rod-shaped, and needle-shaped. In some cases, the conductive particles 171 may also be spherical particles. The conductive particles 171 may have various cross-sectional shapes, such as circular cross-sections, polygonal cross-sections, etc. The embodiments disclosed herein are not limited in this regard.

[0137] When the conductive particles 171 can be spherical or near-spherical in shape, the particle sizes of multiple conductive particles 171 can be the same or different, and the embodiments of this disclosure do not limit this. For example, the conductive particles 171 doped in the transparent metal oxide material have uniform shapes or similar shapes and sizes.

[0138] For example, the conductive particles 171 may be formed of a material capable of transmitting electrical signals, such as various types of conductive particles. The embodiments of this disclosure are not limited in this respect.

[0139] In some examples, the transparent antistatic layer 17 also includes carrier particles. Conductive particles 171 are adsorbed by the carrier particles.

[0140] Carrier particles have the function of adsorbing tiny particles, and can be composed of adsorbent materials. That is, carrier particles have a larger specific surface area, suitable pore size structure and surface microstructure, and have a strong adsorption capacity for adsorbates (i.e., conductive particles).

[0141] For example, the carrier particles may be composed of at least one material selected from carbon black, activated carbon, carbon nanotubes, and molecular sieves (i.e., crystalline silicates or aluminosilicates).

[0142] The conductive particles 171 are adsorbed by the carrier particles in a manner that, for example, allows the conductive particles 171 to be adsorbed into channels such as the internal pores of the carrier particles. In this adsorption method, the microscopic shape of the conductive particles 171 can be, for example, a spherical structure, and the size of the conductive particles 171 is smaller than the channel size of the carrier particles. The adsorption of the conductive particles 171 by the carrier particles allows them to be more uniformly dispersed in the transparent metal oxide material with the help of the carrier particles, thereby improving the overall conductivity of the transparent antistatic layer 17.

[0143] In this embodiment, conductive particles 171 are doped into the transparent metal oxide material, thereby further improving the conductivity of the transparent antistatic layer 17. The electrostatic charge generated by the light-emitting device 10 during operation can be more easily released through the transparent antistatic layer 17, further improving the ESD resistance of the light-emitting device 10. In addition, during high-speed die bonding, it is easier for the electrostatic charge accumulated on the die bonding film (e.g., UV film) to enter the multiple light-emitting devices 10 in multiple stages during the fixing process, and through the transparent antistatic layer 17 provided in the light-emitting device 10. This further reduces the probability of charging and discharging phenomena when there is a lot of electrostatic charge accumulated on the die bonding film (e.g., UV film), and improves the problem that charging and discharging phenomena are easy to occur when there is a lot of electrostatic charge accumulated on the die bonding film (e.g., UV film), thereby causing damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product.

[0144] In some embodiments, as shown in FIG11, the transparent antistatic layer 17 includes a transparent insulating material 170 and conductive particles 171 doped in the transparent insulating material 170. That is, the raw materials for making the transparent antistatic layer 17 are formed by doping the conductive particles 171 into the transparent insulating material 170.

[0145] For example, the transparent insulating material 170 is the main material of the transparent antistatic layer 17 and is used to fix the conductive particles 171.

[0146] The transparent insulating material 170 may include, but is not limited to, resin materials. Various resin materials can be selected, such as acrylic resin, epoxy resin, bisphenol A type epoxy resin, polyvinyl butyral resin, diethylene glycol monobutyl ether acetate, carboxyl-containing polyurethane resin, etc. For example, the transparent insulating material 170 may specifically be PET (polyethylene terephthalate).

[0147] For example, conductive particles 171 are uniformly distributed in the transparent insulating material 170 of the transparent antistatic layer 17.

[0148] For example, there are multiple conductive particles 171. The multiple conductive particles 171 doped in the transparent insulating material 170 are connected by molecular formula or chemical bond, thereby conducting away the static electricity accumulated on the transparent antistatic layer 17.

[0149] With the above configuration, the static electricity generated by the light-emitting device 10 during operation can be released through the conductive particles 171, thereby improving the ESD resistance of the light-emitting device 10 and ensuring its luminous efficiency. Furthermore, during high-speed die bonding, the transparent antistatic layer 17 disposed in the light-emitting device 10 comes into contact with the die bonding film (e.g., UV film). Thus, during high-speed die bonding, the static charge accumulated on the die bonding film (e.g., UV film) is released multiple times to the transparent antistatic layer 17 of the multiple light-emitting devices 10 during the bonding process. This reduces the probability of charging and discharging phenomena easily occurring when a large amount of static charge accumulates on the die bonding film (e.g., UV film), thus mitigating the problem of damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product caused by the easy occurrence of charging and discharging phenomena when a large amount of static charge accumulates on the die bonding film (e.g., UV film).

[0150] In some embodiments, the conductive particles 171 include at least one of metal particles, conductive polymers, and carbon materials.

[0151] For example, the aforementioned metal ions may include, but are not limited to, materials composed of at least one of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), and tin (Sn). The conductive polymer is a polymer with conductive properties. Carbon materials specifically include: carbon nanotubes, graphene, carbon fibers, etc.

[0152] For example, when the transparent antistatic layer 17 includes a conductive material, the resistivity of the conductive material used in the transparent antistatic layer 17 is less than 10. -4 Ω.cm. This ensures that the transparent antistatic layer 17 has good electrical conductivity.

[0153] In this embodiment, the metal particles, conductive polymer, and carbon material all have excellent conductivity and low resistivity, and can remain relatively stable at different temperatures. They can maintain the conductivity of the transparent antistatic layer 17 for a long time. Thus, the static electricity generated by the light-emitting device 10 during operation can be released through the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10. Moreover, since indium tin oxide and indium zinc oxide have good light transmittance and conductivity, their impact on light blocking is minimal, thus avoiding affecting the light extraction efficiency of the light-emitting device 10.

[0154] In other embodiments, the transparent antistatic layer 17 comprises a dissipative material.

[0155] It should be noted that dissipative materials can absorb and dissipate energy, dampen vibrations, or electromagnetic waves.

[0156] For example, dissipative materials mainly include electrostatic dissipative materials, which provide a slow discharge path for static electricity and can prevent rapid discharge.

[0157] For example, the resistivity of the dissipative material used in the transparent antistatic layer 17 is greater than 10. 6 Ω.cm.

[0158] For example, the resistivity of the dissipative material used in the transparent antistatic layer 17 remains relatively stable even under conditions of large temperature variations. This ensures the dissipative performance of the dissipative material.

[0159] In addition, the electrostatic dissipation of dissipative materials can be improved by adding conductive components (such as carbon black) or by using hygroscopic agents on the surface to absorb moisture from the air.

[0160] In this embodiment, the transparent antistatic layer 17 includes a dissipative material. The static electricity generated by the light-emitting device 10 during operation can be absorbed by the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10 and ensuring the luminous efficiency of the light-emitting device 10. In addition, during the high-speed die bonding process, the static charge accumulated on the die bonding film (e.g., UV film) is absorbed by the transparent antistatic layer 17 multiple times during the fixing of multiple light-emitting devices 10. This reduces the probability of charging and discharging phenomena when there is a large amount of static charge accumulated on the die bonding film (e.g., UV film), and improves the problem that charging and discharging phenomena are prone to occur when there is a large amount of static charge accumulated on the die bonding film (e.g., UV film), thereby preventing damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product.

[0161] In some embodiments, as shown in FIG12, the transparent antistatic layer 17 is doped with scattering particles 172.

[0162] For example, the scattering particles 172 are uniformly distributed in the transparent antistatic layer 17. Here, "uniformly distributed" means that after the area where the scattering particles 172 are located is divided into multiple unit areas, the number of scattering particles 172 in each unit area is approximately the same; and in each unit area, scattering particles 172 of various sizes are distributed.

[0163] For example, the material of the scattering particles 172 can be at least one of polystyrene resin (also known as styrene resin, abbreviated as PS), polymethyl methacrylate (also known as acrylic resin, abbreviated as PMMA), polycarbonate (abbreviated as PC), silicon dioxide (SiO2), and titanium dioxide (TiO2).

[0164] For example, the shape of the scattering particle 172 can be spherical or near-spherical. This increases the contact area for light correction.

[0165] For example, the particle sizes of the multiple scattering particles 172 may be the same or different, and the embodiments of this disclosure do not limit this.

[0166] It is understood that the light-emitting device 10 can be used to emit light of different colors. For example, the light-emitting device 10 can emit red, blue, or green light. The material, size, and density of the scattering particles 172 added to the light-emitting device 10 for emitting different colors of light can be the same or different. The embodiments of this disclosure do not limit this.

[0167] Those skilled in the art will understand that the angle of the light emitted by the light-emitting device 10 for emitting blue and green light is larger than that of the light-emitting device 10 for emitting red light. In the embodiments of this disclosure, by adding scattering particles 172 of different degrees (e.g., the material, size, and density of the added scattering particles 172), the difference between the emitted light of the light-emitting device 10 for emitting different colors of light is reduced, and the color difference between the emitted light of the light-emitting device 10 for emitting different colors of light is reduced.

[0168] By employing the above configuration, the transparent antistatic layer 17 can release the static electricity generated by the light-emitting device 10 during operation, thereby improving the ESD resistance of the light-emitting device 10. Furthermore, it effectively scatters light emitted from the light-emitting layer 13 and incident on the transparent antistatic layer 17, increasing the emission angle of the light-emitting device 10. This allows users to see the laser spot from multiple different angles, thus improving the user experience. It should be noted that a larger emission angle of the light-emitting device 10 allows it to be used in display devices requiring a wider viewing angle.

[0169] In some embodiments, as shown in FIG9A, the light-emitting device 10 further includes a first distributed Bragg reflection layer (DBR) 19. The first Bragg reflection layer 19 is disposed on the substrate 11 and covers the epitaxial wafer (wherein, the first semiconductor layer 12, the light-emitting layer 13 and the second semiconductor layer 14 are referred to as the epitaxial wafer), thereby providing protection for the epitaxial wafer.

[0170] Among the light emitted from the light-emitting layer 13, some light rays are emitted directly from the direction of the substrate 11, while another part of the light rays are emitted in a direction away from the substrate 11. This part of the light rays can be reflected again by the first Bragg reflector layer 19 and then emitted from the direction of the substrate 11, thereby improving the light emission efficiency of the light-emitting device 10.

[0171] For example, the first Bragg reflector layer 19 can be a multi-layered structure. For instance, the first Bragg reflector layer 19 includes alternating high-refractive-index layers and low-refractive-index layers. According to the principle of Bragg reflectors, Fresnel reflection occurs at the interface between the high-refractive-index layers and the low-refractive-index layers, causing all reflected light at the interface to undergo destructive interference, resulting in very strong reflected light.

[0172] In some examples, the transparent antistatic layer 17 is a semi-transparent and semi-reflective film.

[0173] As can be seen from the above, the first Bragg reflector layer 19 can reflect light. When the transparent antistatic layer 17 is a semi-transparent and semi-reflective film, a resonant cavity is formed between the first Bragg reflector layer 19 and the transparent antistatic layer 17. The light emitted from the light-emitting layer 13 is reflected between the first Bragg reflector layer 19 and the transparent antistatic layer 17, thereby realizing the micro-luminescence enhancement of the light-emitting device 10.

[0174] It is understandable that the light-emitting device 10 can be used to emit light of different colors. For example, the light-emitting device 10 can emit red, blue, or green light. In order to ensure the color purity and light emission efficiency of the light-emitting devices 10 that emit different colors of light, the micro-resonance cavity lengths (the total thickness of the film between the reflective surface of the first Bragg reflective layer 19 and the reflective surface of the transparent antistatic layer 17) of the red, green, and blue light-emitting devices 10 can be different.

[0175] With the above configuration, the static electricity generated by the light-emitting device 10 during operation can be released through the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10. In addition, a resonant cavity is formed between the transparent antistatic layer 17 and the first Bragg reflector layer 19. The light emitted from the light-emitting layer 13 is reflected between the first Bragg reflector layer 19 and the transparent antistatic layer 17, thereby realizing the micro-luminescence enhancement of the light-emitting device 10.

[0176] In other embodiments, the first Bragg reflector layer 19 can be replaced with an insulating layer that covers the epitaxial wafer (wherein the first semiconductor layer 12, the light-emitting layer 13, and the second semiconductor layer 14 are referred to as the epitaxial wafer), thereby providing protection for the epitaxial wafer.

[0177] In some instances, the first electrode 15 and the second electrode 16 are metal electrodes with reflective properties. When the transparent antistatic layer 17 is a semi-transparent and semi-reflective film, resonant cavities can be formed between the first electrode 15 and the transparent antistatic layer 17, and between the second electrode 16 and the transparent antistatic layer 17. The light emitted from the light-emitting layer 13 is reflected between the first electrode 15 and the transparent antistatic layer 17, and between the second electrode 16 and the transparent antistatic layer 17, thereby achieving micro-luminescence enhancement of the light-emitting device 10.

[0178] In some embodiments, as shown in FIG9B, the light-emitting device 10 further includes a second Bragg reflective layer 21 disposed between the transparent antistatic layer 17 and the substrate 11; the second Bragg reflective layer 21 includes alternating high refractive index layers and low refractive index layers.

[0179] In some examples, the second Bragg reflector layer 21 includes a first high-refractive-index layer and a first low-refractive-index layer stacked sequentially along a direction away from the substrate 11. In other examples, the second Bragg reflector layer 21 includes a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, and a second low-refractive-index layer stacked sequentially along a direction away from the substrate 11. These are merely illustrative examples, and the arrangement of the high-refractive-index layer and the low-refractive-index layer in this disclosure is not limited to these examples.

[0180] For example, the high refractive index layer can be made of one of TiO2, Ti3O5, Ta2O5, or Nb2O5; the low refractive index layer can be made of SiO2 or SiN. x One of Al2O3.

[0181] For example, the second Bragg reflective layer 21 disposed between the transparent antistatic layer 17 and the substrate 11 can be a semi-transparent and semi-reflective film, which can be used to effectively improve the light emission efficiency of the light-emitting layer 13.

[0182] In some instances, the second Bragg reflector layer 21 can serve as a bandpass filter. The emission center wavelength of the emitting layer 13 is located in the transmission band of the bandpass filter, and the emission band bandwidth of the emitting layer 13 is smaller than the transmission bandwidth of the bandpass filter. Therefore, the second Bragg reflector layer 21 can narrow the emission bandwidth of the light-emitting device.

[0183] In some instances, as shown in Figure 9B, the light-emitting device 10 includes both a first Bragg reflector layer 19 and a second Bragg reflector layer 21. The first Bragg reflector layer 19 can reflect the light emitted from the light-emitting layer 13 (e.g., the reflected wavelength includes the light-emitting wavelength of the light-emitting layer), thereby causing the light reflected by the second Bragg reflector layer 21 as a bandpass filter to be reflected again, effectively improving the light emission efficiency of the light-emitting layer 13.

[0184] In some embodiments, as shown in FIG9C, the transparent antistatic layer 17 is a semi-transparent and semi-reflective film. The transparent antistatic layer 17 includes: a high refractive index layer 173 and a low refractive index layer 174 alternately stacked; wherein at least one high refractive index layer 173 or at least one low refractive index layer 174 is a conductive layer.

[0185] For example, the transparent antistatic layer 17 includes a first high refractive index layer and a first low refractive index layer sequentially stacked along a direction away from the substrate 11. For example, the transparent antistatic layer 17 includes a first high refractive index layer, a first low refractive index layer, a second high refractive index layer, and a second low refractive index layer sequentially stacked along a direction away from the substrate 11. This is merely an example, and the arrangement of the high and low refractive index layers in this disclosure is not limited to these examples.

[0186] With the above configuration, the static electricity generated by the light-emitting device 10 during operation can be released through the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10. Moreover, by setting the transparent antistatic layer 17 as a stacked structure of alternating high refractive index layer 173 and low refractive index layer 174, the transparent antistatic layer 17 can also act as a Bragg reflector, thereby improving the collimation and efficiency of the light emitted from the light-emitting layer 13.

[0187] In some embodiments, the layer furthest from the substrate 11 among the alternately stacked high refractive index layer 173 and low refractive index layer 174 is a conductive layer.

[0188] With the above configuration, during the die bonding process of the light-emitting device 10, the conductive layer is in direct contact with the die bonding film 01. As a result, the electrostatic charge accumulated on the die bonding film can be released into the transparent antistatic layer 17 of the multiple light-emitting devices 10 in multiple stages during the fixing process. This reduces the probability of charging and discharging phenomena when a large amount of electrostatic charge accumulates on the die bonding film (e.g., UV film), and improves the problem that charging and discharging phenomena are prone to occur when a large amount of electrostatic charge accumulates on the die bonding film (e.g., UV film), thereby causing damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product.

[0189] Furthermore, the transparent antistatic layer 17 can serve as the semi-transparent and semi-reflective layer, which can effectively improve the light emission efficiency of the light-emitting layer 13.

[0190] Furthermore, the transparent antistatic layer 17 can serve as a bandpass filter. The light emission center wavelength of the light-emitting layer 13 is located in the light transmission band of the bandpass filter, and the light emission bandwidth of the light-emitting layer 13 is smaller than the light transmission bandwidth of the bandpass filter. Therefore, the transparent antistatic layer 17 can narrow the light emission bandwidth of the light-emitting device.

[0191] Furthermore, for example, as shown in FIG9C, the light-emitting device 10 includes a first Bragg reflector layer 19 and a transparent antistatic layer 17, and the transparent antistatic layer 17 can be used as a bandpass filter. The first Bragg reflector layer 19 can reflect the light emitted by the light-emitting layer (e.g., the reflected wavelength includes the light-emitting wavelength of the light-emitting layer), thereby reflecting the light reflected by the transparent antistatic layer 17 as a bandpass filter again, which can effectively improve the light emission efficiency of the light-emitting layer 13.

[0192] Furthermore, for example, if the transparent antistatic layer 17 is a semi-transparent and semi-reflective film, the transparent antistatic layer 17 includes: alternatingly stacked high refractive index layers 173 and low refractive index layers 174; wherein at least one high refractive index layer 173 or at least one low refractive index layer 174 is a conductive layer. For example, the layer furthest from the substrate 11 among the alternatingly stacked high refractive index layers 173 and low refractive index layers 174 is a conductive layer.

[0193] In some embodiments, as shown in FIG13, the light-emitting device 10 further includes a light pattern optimization layer 18 disposed between the transparent antistatic layer 17 and the substrate 11, the light pattern optimization layer 18 being used to adjust the angle of the emitted light from the light-emitting device 10.

[0194] For example, the light pattern optimization layer can be formed on the light-emitting side of the substrate 11 by evaporation or coating using PECVD (Plasma Enhanced Chemical Vapor Deposition).

[0195] By using the above settings, the angle of the emitted light from the light-emitting device 10 is adjusted by the light pattern optimization layer 18, so that the user can see the laser spot from multiple different angles, thereby improving the user experience.

[0196] In some embodiments, as shown in FIG13, the light pattern optimization layer 18 includes scattering particles 172.

[0197] For example, for example, scattering particles 172 are uniformly distributed in the light pattern optimization layer 18.

[0198] In this embodiment, the light pattern optimization layer 18 includes scattering particles 172, which can effectively scatter the light emitted from the light-emitting layer 13 and incident into the light pattern optimization layer 18, thereby increasing the light emission angle of the light-emitting device 10. This allows the user to see the laser spot from multiple different angles, thus improving the user experience.

[0199] In some embodiments, the thickness of the transparent antistatic layer 17 ranges from 100 nm to 1000 nm. For example, the thickness of the transparent antistatic layer 17 can be 100 nm, 100 nm, 100 nm, 100 nm, 1000 nm, etc. The embodiments disclosed herein limit this.

[0200] By adopting the above configuration, it is possible to avoid the transparent antistatic layer 17 being too thin, thus ensuring the conductivity of the transparent antistatic layer 17, and also to avoid the transparent antistatic layer 17 being too thick, thus blocking the emitted light of the light-emitting device 10.

[0201] The embodiments of this disclosure also provide a method for manufacturing a light-emitting device, which is used, for example, to manufacture the light-emitting device 10 provided in some of the above embodiments. FIG14 is a flowchart of a method for manufacturing the light-emitting device 10 provided in some embodiments of this disclosure.

[0202] It should be understood that the steps shown in Figure 14 are not exclusive, and other steps may be performed before, after, or between any of the steps shown. Furthermore, some of the steps may be performed simultaneously, or they may be performed in a different order than that shown in Figure 14.

[0203] As shown in Figure 14, the above manufacturing method includes the following a1 to a4.

[0204] a1: A first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 are sequentially grown on a substrate 11.

[0205] For example, at least a portion of the first semiconductor layer 12 and the second semiconductor layer 14 are staggered along the thickness direction of the light-emitting device 10.

[0206] The substrate 11 is prepared by using a crystal growth process to prepare a sapphire (aluminum oxide (Al2O3)) crystal pillar. The crystal pillar is then sliced ​​and polished to obtain the substrate 11.

[0207] For example, a first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 can be sequentially grown on a substrate 11 using an MOCVD (Metal-organic Chemical Vapor Deposition) process. The first semiconductor layer 12, the light-emitting layer 13, and the second semiconductor layer 14 are referred to as an epitaxial wafer.

[0208] Specifically, a multi-quantum well layer can be grown on the first semiconductor layer 12 as the light-emitting layer 13.

[0209] For example, the quantum well layer is mainly composed of InGaN and GaN, and its thickness can be from 3nm to 7nm. The proportion of In in the light-emitting layer 13 can be adjusted to allow the light-emitting layer 13 to emit light of different colors, such as light with a wavelength of 450nm (i.e., blue light).

[0210] As can be seen from the above, in the light-emitting device 10, the first electrode 15 needs to be electrically connected to the first semiconductor layer 12. Therefore, after the first semiconductor layer 12, the light-emitting layer 13, and the second semiconductor layer 14 are fabricated, the film layer on the first semiconductor layer 12, namely a portion of the light-emitting layer 13 and the second semiconductor layer 14, needs to be etched away so that the first semiconductor layer 12 has an area not covered by the light-emitting layer 13 and the second semiconductor layer 14. This area is used to couple with the first electrode 15.

[0211] a2: A first electrode 15 is formed on the first semiconductor layer 12.

[0212] In some examples, before forming the first electrode 15 on the first semiconductor layer 12, the fabrication method further includes forming a Bragg reflector layer 19 on the second semiconductor layer 14. The Bragg reflector layer 19 covers the surface of the epitaxial wafer away from the substrate 11, forming a planarized structure.

[0213] Furthermore, the Bragg reflector layer 19 has a via exposing the first semiconductor layer 12, which is used to enable the first electrode 15 to overlap with the first semiconductor layer 12. The Bragg reflector layer 19 also has a via exposing at least a portion of the second semiconductor layer 14, which is used to enable the second semiconductor layer 14 to overlap with the second electrode 16.

[0214] Specifically, a Bragg reflector layer can be deposited first, and then vias for exposing the first semiconductor layer 12 and at least a portion of the second semiconductor layer 14 can be formed by etching.

[0215] a3: A second electrode 16 is formed on the second semiconductor layer 14.

[0216] In some examples, after forming the second electrode 16 on the second semiconductor layer 14, the fabrication method further includes: depositing metal to form chip pads. When the light-emitting device 10 is applied to the backlight module 500, the chip pads are used to connect the light-emitting device 10 to the substrate 20 of the backlight module 500. When the light-emitting device 10 is applied to the display panel 300, the chip pads are used to connect the light-emitting device 10 to the driving substrate 301 of the display panel 300.

[0217] a4: A transparent antistatic layer 17 is formed on the side of the substrate 11 away from the first semiconductor layer 12.

[0218] For example, the transparent antistatic layer 17 can be formed by physical vapor deposition (PVD) methods, including magnetron sputtering, electron beam evaporation and ion beam sputtering.

[0219] In some examples, prior to step a4 above, the fabrication method further includes thinning the substrate 11, for example by polishing or grinding. Then, a transparent antistatic layer 17 is formed on the side of the thinned substrate 11 away from the first semiconductor layer 12.

[0220] It is understandable that after the transparent antistatic layer 17 is made, the whole light-emitting device 10 is obtained. The manufacturing method also includes cutting the substrate 11 to obtain several individual light-emitting devices 10.

[0221] In the light-emitting device 10 prepared by the above method, by providing a transparent antistatic layer 17, the static electricity generated by the light-emitting device 10 during operation can be released through the transparent antistatic layer 17, thereby improving the ESD resistance of the light-emitting device 10 and ensuring the luminous efficiency of the light-emitting device 10. In addition, during the high-speed die bonding process, the transparent antistatic layer 17 provided in the light-emitting device 10 comes into contact with the die bonding film (e.g., UV film). Therefore, during the high-speed die bonding process, the static charge accumulated on the die bonding film (e.g., UV film) is released to the transparent antistatic layer 17 of the multiple light-emitting devices 10 in multiple stages during the fixing of multiple light-emitting devices 10. This reduces the probability of charging and discharging phenomena easily occurring when there is a large amount of static charge accumulated on the die bonding film (e.g., UV film), and improves the problem that charging and discharging phenomena easily occur when there is a large amount of static charge accumulated on the die bonding film (e.g., UV film), thereby causing damage to the light-emitting device 10 and the glass substrate (e.g., the aforementioned driving substrate 301) in the COG product.

[0222] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting device, comprising: Substrate; A first semiconductor layer, a light-emitting layer, and a second semiconductor layer are sequentially stacked on the substrate; The first electrode is disposed on the first semiconductor layer; A second electrode disposed on the second semiconductor layer; and; A transparent antistatic layer is disposed on the side of the substrate away from the first semiconductor layer.

2. The light-emitting device according to claim 1, wherein, The transparent antistatic layer comprises a transparent metal oxide material.

3. The light-emitting device according to claim 2, wherein, The transparent metal oxide material is doped with conductive particles.

4. The light-emitting device according to claim 1, wherein, The transparent antistatic layer comprises a transparent insulating material and conductive particles doped in the transparent insulating material.

5. The light-emitting device according to claim 4, wherein, The conductive particles include at least one of metal particles, conductive polymers, and carbon materials.

6. The light-emitting device according to claim 1, wherein, The transparent antistatic layer includes a dissipative material.

7. The light-emitting device according to any one of claims 1 to 6, wherein, The transparent antistatic layer is doped with scattering particles.

8. The light-emitting device according to claim 7, wherein, The material of the scattering particles can be at least one of polystyrene resin, polymethyl methacrylate, polycarbonate, and silicon dioxide.

9. The light-emitting device according to any one of claims 1 to 8, wherein, Also includes: A first Bragg reflector layer disposed on the substrate and covering the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; And / or, the first electrode and the second electrode are metal electrodes.

10. The light-emitting device according to any one of claims 1 to 9, further comprising: A second Bragg reflective layer is disposed between the transparent antistatic layer and the substrate.

11. The light-emitting device according to claim 10, wherein, The second Bragg reflector layer includes a bandpass filter; The light emission center wavelength of the light-emitting layer is located in the light transmission band of the bandpass filter, and the light emission bandwidth of the light-emitting layer is smaller than the light transmission bandwidth of the bandpass filter.

12. The light-emitting device according to any one of claims 1 to 9, wherein, The transparent antistatic layer is a semi-transparent, semi-reflective film, and / or, The transparent antistatic layer includes: alternating stacked high refractive index layers and low refractive index layers; wherein at least one high refractive index layer or at least one low refractive index layer is a conductive layer.

13. The light-emitting device according to claim 12, wherein, The transparent antistatic layer includes a bandpass filter; The light-emitting center wavelength of the light-emitting layer is located in the transmission band of the bandpass filter, and the light-emitting wave of the light-emitting layer... The bandwidth of the segment is less than the transmittance bandwidth of the bandpass filter.

14. The light-emitting device according to claim 12 or 13, wherein, The layer furthest from the substrate among the alternately stacked high-refractive-index and low-refractive-index layers is a conductive layer.

15. The light-emitting device according to any one of claims 1 to 6, wherein, Also includes: A light pattern optimization layer is disposed between the transparent antistatic layer and the substrate, the light pattern optimization layer being used to adjust the angle of the emitted light from the light-emitting device.

16. The light-emitting device according to claim 15, wherein, The light pattern optimization layer includes scattering particles.

17. The light-emitting device according to any one of claims 1 to 16, wherein, The thickness of the transparent antistatic layer ranges from 100nm to 1000nm.

18. A method for fabricating a light-emitting device, comprising: A first semiconductor layer, a light-emitting layer, and a second semiconductor layer are sequentially grown on a substrate; A first electrode is formed on the first semiconductor layer; A second electrode is formed on the second semiconductor layer; A transparent antistatic layer is formed on the side of the substrate away from the first semiconductor layer.

19. A display panel, comprising: Drive substrate; A plurality of light-emitting devices as described in any one of claims 1 to 17 are located on the driving substrate.

20. A backlight module, comprising: substrate; A plurality of light-emitting devices as described in any one of claims 1 to 17 are located on the substrate.

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