Method for adjusting the position of a susceptor in an epitaxial reactor and control device
By using a driving device to physically interfere with the base and the stop component within the epitaxial reaction chamber, the problem of uneven epitaxial layer thickness caused by base position displacement is solved, enabling base position adjustment in a closed state and improving production efficiency and overall equipment efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
- Filing Date
- 2026-04-09
- Publication Date
- 2026-07-17
AI Technical Summary
In epitaxial growth equipment, the positional displacement of the substrate leads to uneven thickness of the epitaxial layer deposited on the wafer surface, and existing technologies make it difficult to effectively adjust this without opening cavities.
By using a driving device within a closed epitaxial reaction chamber to physically interfere with the base and the stop component, the radial displacement of the base is achieved using the reaction force, thereby adjusting the concentricity of the base and the preheating ring.
Adjusting the base position without compromising vacuum and gas atmosphere reduces the risk of particulate contamination, improves production efficiency, minimizes process interruptions, lowers maintenance costs, and restores the uniformity of the process gas flow field.
Smart Images
Figure CN122406367A_ABST