Low-residue, heat-resistant and anti-static semiconductor wafer cutting protective film

By introducing synergistically modified polymer matrix and organic small molecule interface modifier into the semiconductor wafer dicing protective film, a functional adhesion layer is constructed, which solves the problems of instability in residue and antistatic performance under high temperature conditions, and achieves the effects of low residue, heat resistance and antistatic properties, thereby improving wafer processing efficiency and product quality.

CN122445294APending Publication Date: 2026-07-24深圳市精恒光电科技有限公司
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Patent Information

Application Number
CN202610607735.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-05-06
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing semiconductor wafer dicing protective films are prone to residue buildup under high-temperature conditions and have unstable antistatic properties, making it difficult to balance stable adhesion with low-residue peeling.

Method used

A functional adhesion layer is constructed by using a synergistically modified polymer matrix and organic small molecule interface regulators, along with heat-resistant toughening agents, antistatic agents, residue-inhibiting agents, and rheology modifiers. A reversible network polymer system is built through dynamic covalent bonds and aromatic π-π interactions, achieving stable adhesion and low-residue peeling of the protective film during wafer dicing.

Benefits of technology

It significantly reduces wafer surface residue under high temperature conditions, maintains a long-lasting antistatic effect, improves cutting accuracy and yield, and enhances process reliability.

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Abstract

The invention relates to the technical field of functional films for semiconductor material processing, and discloses a low-residue, heat-resistant and antistatic semiconductor wafer cutting protective film. The protective film comprises a functional adhesion layer arranged on the surface of a base film, and the functional adhesion layer is composed of a synergistic modified polymer matrix, an organic micromolecule interface regulating agent, a heat-resistant toughening agent, an anti-static auxiliary agent, a residue inhibition auxiliary agent and a rheology modifier. The synergetic modified polymer matrix is formed by synergetic modification of an acrylate main chain polymer, 2-aminoethyl methacrylate, terephthalaldehyde, tannic acid and amino-terminated polydimethylsiloxane, and the small organic molecule interface regulating agent is 2, 5-dihydroxybenzoic acid. The preparation method is simple in process, high in controllability and suitable for the semiconductor wafer cutting process with high requirements for cleanliness, heat resistance and electrostatic control.
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