A low-residual, heat-resistant and anti-static semiconductor wafer cutting protective film

Abstract

The application relates to the technical field of functional films for semiconductor material processing, and discloses a low-residual, heat-resistant and anti-static semiconductor wafer cutting protection film. The protection film comprises a functional adhesive layer arranged on the surface of a base film, and the functional adhesive layer is composed of a synergistically modified polymer matrix, an organic small-molecule interface regulator, a heat-resistant toughening agent, an anti-static auxiliary agent, a residual inhibiting auxiliary agent and a rheological adjusting agent. The synergistically modified polymer matrix is formed by synergistic modification of an acrylate main chain polymer, 2-aminoethyl methacrylate, p-benzene dicarboxaldehyde, tannic acid and an amino-terminated polydimethylsiloxane, and the organic small-molecule interface regulator is 2,5-dihydroxybenzoic acid. The preparation method is simple and controllable, and is suitable for the semiconductor wafer cutting process with high requirements for cleanliness, heat resistance and static control.

Description

Technical Field

[0001] This invention relates to the field of functional thin film technology for semiconductor material processing, and specifically to a semiconductor wafer dicing protective film that is low in residue, heat-resistant, and antistatic. Background Technology

[0002] In the semiconductor device manufacturing process, wafers need to undergo precision processing steps such as thinning, dicing, and dicing. To prevent the wafer surface from being damaged by mechanical impact, debris contamination, and electrostatic discharge during the dicing process, a wafer dicing protective film is usually attached to the wafer surface to provide temporary protection. The protective film is then peeled off after dicing is completed.

[0003] Existing protective films for semiconductor wafer dicing are mostly based on acrylic pressure-sensitive adhesive systems, which adjust the adhesion of the adhesive layer to meet the adhesion requirements during the dicing process. However, in practical applications, the above-mentioned existing technologies still have the following shortcomings: On the one hand, during wafer dicing and subsequent cleaning and drying processes, the protective film is often exposed to high temperature or high-speed friction environments. Traditional pressure-sensitive adhesive systems are prone to softening, migration, or thermal decomposition, resulting in adhesive residues on the wafer surface, which in turn affects subsequent precision processes such as photolithography and bonding. On the other hand, the antistatic methods commonly used in existing protective films mostly rely on low molecular weight antistatic agents or ionic additives. These substances are prone to migration or precipitation during use, and their antistatic performance degrades significantly under high temperature conditions, which may further aggravate the wafer surface contamination problem.

[0004] Simply reducing adhesive adhesion to mitigate residual risk can easily lead to protective film lifting, displacement, or even detachment during dicing, affecting dicing accuracy and wafer yield. Therefore, achieving low-residue peeling under high-temperature conditions while ensuring stable adhesion during dicing, and maintaining durable and stable antistatic properties, remains a critical technical challenge in the field of semiconductor wafer dicing protective films. Summary of the Invention

[0005] To overcome the technical challenges of residual semiconductor wafer dicing protective films under high-temperature conditions, unstable antistatic properties, and difficulty in simultaneously achieving stable adhesion and low-residue peeling, as described in the background art, this invention aims to provide a low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film and its preparation method. This invention employs a functional adhesion layer system constructed primarily of a synergistically modified polymer matrix, incorporating organic small-molecule interface modifiers, and combined with heat-resistant toughening agents, antistatic agents, residue-inhibiting agents, and rheology modifiers. Through synergistic regulation of the polymer structure and interfacial behavior, the protective film maintains stable adhesion during wafer dicing, achieves low-residue release during the peeling stage, and possesses excellent heat resistance and antistatic properties. This invention significantly reduces wafer surface residue while ensuring stable adhesion during dicing and maintains a durable antistatic effect under high-temperature processing conditions.

[0006] The objective of this invention can be achieved through the following technical solutions: A low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film is disclosed. The semiconductor wafer dicing protective film includes a functional adhesion layer disposed on the surface of a base film. The functional adhesion layer comprises the following raw materials in parts by weight: 60-85 parts of a synergistically modified polymer matrix; 0.1-3.0 parts of an organic small molecule interface modifier; 2-10 parts of a heat-resistant toughening agent; 0.5-5.0 parts of an antistatic agent; 0.1-2.0 parts of a residue-inhibiting agent; and 0.1-1.5 parts of a rheology modifier. The synergistically modified polymer matrix is ​​a reversible network polymer system synergistically constructed through dynamic covalent bonds and aromatic π-π interactions. The organic small molecule interface modifier is 2,5-dihydroxybenzoic acid.

[0007] Optionally, the synergistically modified polymer matrix comprises the following raw materials in parts by weight: 75-90 parts of acrylate backbone polymer; 1-6 parts of 2-aminoethyl methacrylate; 0.2-3.0 parts of terephthalaldehyde; 0.5-4.0 parts of tannic acid; and 1-8 parts of amino-terminated polydimethylsiloxane.

[0008] Optionally, the preparation method of the synergistically modified polymer matrix includes the following steps: (1) Add the acrylate main chain polymer to the reactor and heat it to the melting state under stirring to obtain a homogeneous polymer matrix system; (2) 2-aminoethyl methacrylate and terephthalaldehyde are added sequentially to the polymer matrix system and reacted under stirring conditions to form a stable modified structure in the system, thus obtaining an intermediate modified system. (3) Add tannic acid and amino-terminated polydimethylsiloxane to the intermediate modified system, continue the reaction under stirring and disperse fully, and cool after the reaction to obtain the synergistically modified polymer matrix.

[0009] Optionally, the reaction conditions in step (1) are stirring at 50-80°C, stirring speed of 200-500 r / min, and reaction time of 30-90 min.

[0010] Optionally, the reaction conditions in step (2) are as follows: the reaction is carried out at 60-100°C, the stirring speed is 300-700 r / min, and the reaction time is 60-180 min.

[0011] Optionally, the reaction conditions in step (3) are as follows: the reaction is carried out at 40-70°C, the stirring speed is 200-600 r / min, the reaction time is 30-120 min, and the reaction is allowed to cool naturally to room temperature after the reaction is completed.

[0012] Optionally, the heat-resistant toughening agent is a mixture of polyethersulfone and polyetherimide in a mass ratio of 3:1; the antistatic agent is a mixture of sodium sulfonated polystyrene and polyvinylpyrrolidone in a mass ratio of 1:4; the residue-inhibiting agent is a mixture of polydimethylsiloxane oil and polytetrafluoroethylene micro powder in a mass ratio of 2:1; and the rheology modifier is a mixture of fumed silica and polyamide wax powder in a mass ratio of 3:2.

[0013] Optionally, a method for preparing a low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film includes the following steps: S1, the synergistically modified polymer matrix is ​​added to a mixing container, and an organic small molecule interface regulator is added under stirring conditions to fully disperse it, thus obtaining a matrix mixing system; S2, heat-resistant toughening agent, antistatic agent, residue inhibitor and rheology modifier are added sequentially to the matrix mixture system and mixed and dispersed under stirring conditions to obtain functional adhesive layer coating liquid; S3, the functional adhesive layer coating liquid is coated on the surface of the base film, and after drying, a functional adhesive layer is formed on the surface of the base film, resulting in a semiconductor wafer dicing protective film with low residue, heat resistance and antistatic properties.

[0014] Optionally, the reaction conditions for step S1 are: stirring and dispersing at 25–50°C, stirring speed of 200–500 r / min, and stirring time of 20–60 min; the reaction conditions for step S2 are: mixing and dispersing at 30–70°C, stirring speed of 300–700 r / min, and mixing time of 30–120 min.

[0015] Optionally, the reaction conditions for step S3 are as follows: film is formed by coating at a temperature of 30–60°C, followed by drying at 60–120°C for 5–30 minutes.

[0016] The beneficial effects of this invention are: This invention introduces a synergistically modified polymer matrix composed of 2-aminoethyl methacrylate, terephthalaldehyde, tannic acid, and amino-terminated polydimethylsiloxane into a functional adhesive layer. This forms a dynamically adjustable polymer network structure within the material, enabling the protective film to rearrange its structure and release stress during wafer dicing when heat and mechanical stress are generated. This effectively suppresses the softening migration and adhesive residue problems that easily occur in traditional pressure-sensitive adhesive systems under high-temperature conditions. Simultaneously, by introducing 2,5-dihydroxybenzoic acid as an organic small-molecule interface regulator, the interfacial energy between the protective film and the wafer surface is finely controlled, ensuring uniform release of interfacial forces during peeling and significantly reducing the risk of trace residues and contamination on the wafer surface. The restricted distribution of the antistatic additive within the synergistically modified polymer matrix network structure ensures that the protective film maintains stable and durable antistatic properties during high-temperature dicing and subsequent processes, preventing it from easily failing. In summary, this invention achieves a synergistic improvement in low residual peeling, good heat resistance, and long-lasting antistatic properties while ensuring stable adhesion performance during the cutting process, which can effectively improve the yield and process reliability of semiconductor wafer cutting. Attached Figure Description

[0017] The invention will now be further described with reference to the accompanying drawings.

[0018] Figure 1 A comparison of the infrared spectra of the polymer matrix and the synergistically modified polymer matrix; Figure 2 A comparison chart of the test results for low residue performance of samples with different formulation ratios; Figure 3 This is a comparison chart of the heat resistance test results for samples with different formulation ratios. Detailed Implementation

[0019] The present invention will be further described below with reference to specific embodiments. However, the present invention is not limited to the following embodiments. Equivalent adjustments made without departing from the spirit and essence of the present invention should also be considered to fall within the protection scope of the present invention. Example

[0020] This embodiment aims to verify that when the amount of each raw material and the reaction conditions are taken at the lower limit of the range defined in the claims, the prepared semiconductor wafer dicing protective film can still achieve the comprehensive effects of low residue, heat resistance and antistatic properties while ensuring basic adhesion performance.

[0021] Preparation method S1, Preparation of synergistically modified polymer matrix 75 parts of the acrylate backbone polymer were added to a reaction vessel and heated to 50°C under stirring at 200 rpm for 30 min to ensure complete dissolution, resulting in a homogeneous polymer matrix system. Subsequently, 1 part of 2-aminoethyl methacrylate and 0.2 parts of terephthalaldehyde were added to the polymer matrix system, and the reaction was carried out at 60°C and 300 rpm for 60 min to obtain an intermediate modified system. Then, 0.5 parts of tannic acid and 1 part of amino-terminated polydimethylsiloxane were added to the intermediate modified system, and the reaction was carried out at 40°C and 200 rpm for 30 min. After the reaction, the mixture was allowed to cool naturally to room temperature to obtain a synergistically modified polymer matrix. Figure 1 The infrared spectrum comparison shows that the unmodified sample mainly exhibits typical characteristic peaks of the acrylate system, with peaks at approximately 1730 cm⁻¹. -1 A distinct C=O stretching vibration peak of the ester group appears at 1160–1100 cm⁻¹. -1 C–O–C stretching vibration peaks can be observed within the range, and the overall spectral structure is relatively simple; the modified sample retains the original ester group characteristic peaks in the 3600–3200 cm⁻¹ range. -1 The appearance of a significantly broadened absorption band within the range indicates the introduction of polyphenolic hydroxyl groups and hydrogen bonding interactions; simultaneously, at approximately 1650 cm⁻¹... -1 A new absorption peak appears at 1100–1000 cm⁻¹, corresponding to the stretching vibration of the imine bond C=N, indicating that the modification reaction has occurred successfully; -1 The presence of enhanced and broadened absorption peaks within the range is attributed to the Si–O–Si framework vibration, further demonstrating that the siloxane structure has been introduced into the synergistically modified polymer matrix. Overall results indicate that the chemical structure of the modified polymer system is more complex, and the synergistic modification characteristics are obvious. S2, Preparation of Functional Adhesive Layer Coating Solution Add 60 parts of the above-mentioned synergistically modified polymer matrix to a mixing container, add 0.1 parts of 2,5-dihydroxybenzoic acid at 25℃ and 200 r / min, and stir and disperse for 20 min; then add 2 parts of heat-resistant toughening agent, 0.5 parts of antistatic agent, 0.1 parts of residue inhibitor and 0.1 parts of rheology modifier in sequence, and mix and disperse at 30℃ and 300 r / min for 30 min to obtain the functional adhesive layer coating liquid; S3, Film Formation Treatment The functional adhesive coating liquid is coated onto the surface of the base film by coating at 30°C and dried at 60°C for 5 minutes to obtain a semiconductor wafer dicing protective film with low residue, heat resistance and antistatic properties. Example

[0022] This embodiment aims to verify the comprehensive performance of the synergistic modification of the polymer matrix and the functional adhesive layer when the dosage of each component and the reaction conditions are taken as the median value of the range defined in the claims, and to evaluate its applicability in the wafer dicing process.

[0023] Preparation method S1, Preparation of synergistically modified polymer matrix 82 parts of the acrylate backbone polymer were added to a reaction vessel and heated to 65°C under stirring at 350 r / min for 60 min to obtain a homogeneous polymer matrix system. 3 parts of 2-aminoethyl methacrylate and 1.5 parts of terephthalaldehyde were added to the mixture, and the reaction was carried out at 80°C and 500 r / min for 120 min to obtain an intermediate modified system. Then, 2 parts of tannic acid and 4 parts of amino-terminated polydimethylsiloxane were added, and the reaction was carried out at 55°C and 400 r / min for 60 min. After the reaction was completed, the mixture was naturally cooled to room temperature to obtain a synergistically modified polymer matrix. S2, Preparation of Functional Adhesive Layer Coating Solution 72 parts of the synergistically modified polymer matrix were added to a mixing container, and 1.5 parts of 2,5-dihydroxybenzoic acid were added at 40℃ and 350 r / min. The mixture was stirred and dispersed for 40 min. Subsequently, 6 parts of heat-resistant toughening agent, 2.5 parts of antistatic agent, 1 part of residue inhibitor and 0.8 parts of rheology modifier were added in sequence. The mixture was stirred and dispersed at 50℃ and 500 r / min for 80 min to obtain the functional adhesive layer coating liquid. S3, Film Formation Treatment The functional adhesive coating liquid is applied to the surface of the base film, coated at 45°C, and dried at 90°C for 15 minutes to obtain a semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties. Example

[0024] This embodiment aims to verify the stability and applicability of the synergistically modified polymer matrix and the resulting wafer dicing protective film under high temperature and high load conditions when the amount of each raw material and the reaction conditions are taken to the upper limit of the range defined in the claims.

[0025] Preparation method S1, Preparation of synergistically modified polymer matrix 90 parts of the acrylate main chain polymer were added to a reaction vessel and heated to 80°C under stirring at 500 r / min for 90 min to obtain a homogeneous polymer matrix system. 6 parts of 2-aminoethyl methacrylate and 3.0 parts of terephthalaldehyde were added to the system, and the mixture was reacted at 100°C and 700 r / min for 180 min to obtain an intermediate modified system. Then, 4 parts of tannic acid and 8 parts of amino-terminated polydimethylsiloxane were added, and the mixture was reacted at 70°C and 600 r / min for 120 min. After the reaction was completed, the mixture was naturally cooled to room temperature to obtain a synergistically modified polymer matrix. S2, Preparation of Functional Adhesive Layer Coating Solution 85 parts of the synergistically modified polymer matrix were added to a mixing container, and 3.0 parts of 2,5-dihydroxybenzoic acid were added at 50℃ and 500 r / min. The mixture was stirred and dispersed for 60 min. Subsequently, 10 parts of heat-resistant toughening agent, 5.0 parts of antistatic agent, 2.0 parts of residue inhibitor and 1.5 parts of rheology modifier were added in sequence. The mixture was stirred and dispersed at 70℃ and 700 r / min for 120 min to obtain the functional adhesive layer coating liquid. S3, Film Formation Treatment The functional adhesive coating liquid is coated onto the surface of the base film, coated at 60°C, and dried at 120°C for 30 min to obtain a semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties.

[0026] Comparative Example 1: This comparative example aims to verify the effect of using only 2-aminoethyl methacrylate to modify the acrylate backbone polymer on the overall performance of the synergistically modified polymer matrix and functional adhesive layer, while keeping the amounts of other components and reaction conditions consistent with Example 2.

[0027] Preparation method S1, Preparation of synergistically modified polymer matrix 82 parts of the acrylate backbone polymer were added to a reaction vessel and heated to 65°C under stirring at 350 r / min for 60 min to obtain a homogeneous polymer matrix system. 3 parts of 2-aminoethyl methacrylate were added to the system, and the reaction was carried out at 80°C and 500 r / min for 120 min to obtain an intermediate modified system. Then, 2 parts of tannic acid and 4 parts of amino-terminated polydimethylsiloxane were added, and the reaction was carried out at 55°C and 400 r / min for 60 min. After the reaction was completed, the system was naturally cooled to room temperature to obtain a synergistically modified polymer matrix. S2, Preparation of Functional Adhesive Layer Coating Solution 72 parts of the synergistically modified polymer matrix were added to a mixing container, and 1.5 parts of 2,5-dihydroxybenzoic acid were added at 40℃ and 350 r / min. The mixture was stirred and dispersed for 40 min. Subsequently, 6 parts of heat-resistant toughening agent, 2.5 parts of antistatic agent, 1 part of residue inhibitor and 0.8 parts of rheology modifier were added in sequence. The mixture was stirred and dispersed at 50℃ and 500 r / min for 80 min to obtain the functional adhesive layer coating liquid. S3, Film Formation Treatment The functional adhesive coating liquid is applied to the surface of the base film, coated at 45°C, and dried at 90°C for 15 minutes to obtain a semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties.

[0028] Comparative Example 2: This comparative example aims to verify the effect of using only terephthalaldehyde to modify the acrylate backbone polymer on the overall performance of the synergistically modified polymer matrix and functional adhesive layer, while keeping the amounts of other components and reaction conditions consistent with Example 2.

[0029] Preparation method S1, Preparation of synergistically modified polymer matrix 82 parts of the acrylate main chain polymer were added to a reaction vessel and heated to 65°C under stirring at 350 r / min for 60 min to obtain a homogeneous polymer matrix system. 1.5 parts of terephthalaldehyde were added to the system and reacted at 80°C and 500 r / min for 120 min to obtain an intermediate modified system. Then, 2 parts of tannic acid and 4 parts of amino-terminated polydimethylsiloxane were added and reacted at 55°C and 400 r / min for 60 min. After the reaction was completed, the system was naturally cooled to room temperature to obtain a synergistically modified polymer matrix. S2, Preparation of Functional Adhesive Layer Coating Solution 72 parts of the synergistically modified polymer matrix were added to a mixing container, and 1.5 parts of 2,5-dihydroxybenzoic acid were added at 40℃ and 350 r / min. The mixture was stirred and dispersed for 40 min. Subsequently, 6 parts of heat-resistant toughening agent, 2.5 parts of antistatic agent, 1 part of residue inhibitor and 0.8 parts of rheology modifier were added in sequence. The mixture was stirred and dispersed at 50℃ and 500 r / min for 80 min to obtain the functional adhesive layer coating liquid. S3, Film Formation Treatment The functional adhesive coating liquid is applied to the surface of the base film, coated at 45°C, and dried at 90°C for 15 minutes to obtain a semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties.

[0030] Comparative Example 3: This comparative example aims to verify the effect of not adding the organic small molecule interface regulator 2,5-dihydroxybenzoic acid on the interface regulation ability and overall performance of the functional adhesive layer, while keeping the preparation process of the synergistic modified polymer matrix, the amount of other components and the reaction conditions the same as in Example 2.

[0031] Preparation method S1, Preparation of synergistically modified polymer matrix 82 parts of the acrylate backbone polymer were added to a reaction vessel and heated to 65°C under stirring at 350 r / min for 60 min to obtain a homogeneous polymer matrix system. 3 parts of 2-aminoethyl methacrylate and 1.5 parts of terephthalaldehyde were added to the mixture, and the reaction was carried out at 80°C and 500 r / min for 120 min to obtain an intermediate modified system. Then, 2 parts of tannic acid and 4 parts of amino-terminated polydimethylsiloxane were added, and the reaction was carried out at 55°C and 400 r / min for 60 min. After the reaction was completed, the mixture was naturally cooled to room temperature to obtain a synergistically modified polymer matrix. S2, Preparation of Functional Adhesive Layer Coating Solution 72 parts of the synergistically modified polymer matrix were added to a mixing container and stirred and dispersed at 40℃ and 350r / min for 40min. Then, 6 parts of heat-resistant toughening agent, 2.5 parts of antistatic agent, 1 part of residue inhibitor and 0.8 parts of rheology modifier were added in sequence and mixed and dispersed at 50℃ and 500r / min for 80min to obtain the functional adhesive layer coating liquid. S3, Film Formation Treatment The functional adhesive coating liquid is applied to the surface of the base film, coated at 45°C, and dried at 90°C for 15 minutes to obtain a semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties.

[0032] Performance testing: 1. Low residual performance test method The semiconductor wafer dicing protective films prepared in Examples 1, 2, and 3, as well as Comparative Examples 1-3, were cut to the same size and attached to the surface of a cleaned and polished silicon wafer under the same bonding pressure and time conditions. The attached wafer samples were then placed in a set temperature environment for a certain period to simulate wafer dicing and related heat treatment processes. After processing, the protective films were peeled off the wafer surface at a constant speed at room temperature. The wafer surface was then inspected using an optical microscope and surface observation methods to observe for the presence of colloidal residues, surface contamination, or adhesion marks, in order to evaluate the low-residue performance of different samples.

[0033] 2. Test method for heat resistance The semiconductor wafer dicing protective films prepared in Examples 1, 2, and 3, as well as Comparative Examples 1-3, were respectively attached to base film carriers of the same specifications. They were then placed in constant-temperature environments at different temperatures for predetermined times under no external force to simulate the thermal effects caused by friction and equipment operation during wafer dicing. After heat treatment, the samples were allowed to cool naturally to room temperature. The appearance of the protective films was observed, and phenomena such as softening, flow, blistering, edge lifting, detachment, or significant deformation were recorded. The adhesion status was also checked to evaluate the heat resistance stability of the protective films.

[0034] 3. Antistatic performance test method The semiconductor wafer dicing protective films prepared in Examples 1, 2, and 3, as well as Comparative Examples 1-3, were cut into samples of the same size and subjected to antistatic performance tests under the same environmental conditions. During the test, the samples were placed in a specified test area, and the accumulation and dissipation of surface charge on the samples were tested using an electrostatic performance testing device. The electrostatic response of the samples under friction or contact conditions was recorded. By comparing the test performance of different samples, the stability of the antistatic performance of the protective films under different formulations and structural conditions was evaluated.

[0035] 4. Wafer dicing suitability and peel integrity test methods The semiconductor wafer dicing protective films prepared in Examples 1, 2, and 3, as well as Comparative Examples 1-3, were respectively attached to the surface of silicon wafers of the same specifications. Dicing tests were conducted under the same wafer dicing equipment and consistent dicing process parameters. During the dicing process, it was observed whether the protective film would shift, curl, crack, or detach. After dicing, the protective film was peeled off as a whole, and the smoothness and continuity of the peeling process were observed. The surface condition of the wafer after peeling was also checked. The above process was used to comprehensively evaluate the applicability and peeling integrity of different samples in actual wafer dicing processes.

[0036] Table 1 Comparison of performance test results between the examples and the comparative examples. Example 1 1.8 140 <![CDATA[1.2×10 9 ]]> Complete peeling good Example 2 0.6 160 <![CDATA[6.5×10 8 ]]> Complete peeling optimal Example 3 1.2 150 <![CDATA[8.9×10 8 ]]> Complete peeling Superior Comparative Example 1 4.5 120 <![CDATA[3.6×10¹ 0 ]]> Local damage Poor Comparative Example 2 5.1 115 <![CDATA[4.2×10¹ 0 ]]> Local damage Poor Comparative Example 3 3.9 130 <![CDATA[6.8×10¹ 0 ]]> Obvious residue Poor As shown in Table 1, the semiconductor wafer dicing protective films prepared in Examples 1, 2, and 3 outperform the comparative samples in all performance indicators. Figure 2 Example 2 exhibits the most outstanding overall performance, with a residual area ratio of only 0.6% after peeling, significantly lower than 1.8% in Example 1 and 1.2% in Example 3, and also significantly lower than the residual levels of 4.5%, 5.1%, and 3.9% in Comparative Examples 1, 2, and 3, respectively; Regarding heat resistance, Figure 3Example 2 can withstand temperatures up to 160°C, higher than Example 1's 140°C and Example 3's 150°C, while the comparative sample's heat resistance temperature is only 115–130°C, indicating significantly insufficient stability under high-temperature conditions. Regarding antistatic properties, Example 2 has a surface resistivity of 6.5 × 10⁻⁶. 8 Ω, lower than 1.2 × 10 in Example 1. 9 Ω and 8.9 × 10 in Example 3 8 Ω, and significantly better than the comparative sample of 3.6 × 10¹ 0 ~6.8×10¹ 0 The test results for Ω indicate that its static dissipation ability is more stable.

[0037] Further analysis of the differences between the embodiments reveals that although Embodiments 1 and 3 are slightly inferior to Embodiment 2 in some indicators, they still exhibit superior overall performance. For example, both Embodiments 1 and 3 can achieve complete peeling after cutting, with residual area ratio controlled below 2%, heat resistance temperature not lower than 140℃, and surface resistivity maintained at 10. 9 The resistance was within the order of Ω; in contrast, Comparative Example 1 and Comparative Example 2 both showed localized damage after cutting, while Comparative Example 3 showed significant residual problems, and its surface resistivity was generally higher than 10¹. 0 Ω indicates that it is difficult to achieve low residue, heat resistance, and antistatic properties when using a single modification method or lacking organic small molecule interface regulators.

[0038] In summary, through the synergistic effect of the modified polymer matrix and the organic small molecule interface regulator, the semiconductor wafer dicing protective film of the present invention has achieved significant improvements in residue control, thermal stability, antistatic properties, and peeling integrity after dicing. Among them, the median ratio system used in Example 2 shows the best performance in all performance indicators, which fully demonstrates the rationality and superiority of the technical solution of the present invention in semiconductor wafer dicing applications.

Claims

1. A low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film, characterized in that, The semiconductor wafer dicing protective film includes a functional adhesion layer disposed on the surface of a base film. The functional adhesion layer comprises the following raw materials in parts by weight: 60-85 parts of a synergistic modified polymer matrix; 0.1-3.0 parts of an organic small molecule interface regulator; 2-10 parts of a heat-resistant toughening agent; 0.5-5.0 parts of an antistatic agent; 0.1-2.0 parts of a residue-inhibiting agent; and 0.1-1.5 parts of a rheology modifier. The synergistic modified polymer matrix is ​​a reversible network polymer system synergistically constructed through dynamic covalent bonds and aromatic π-π interactions. The organic small molecule interface regulator is 2,5-dihydroxybenzoic acid.

2. The low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film according to claim 1, characterized in that, The synergistically modified polymer matrix comprises the following raw materials in parts by weight: 75-90 parts of acrylate main chain polymer; 1-6 parts of 2-aminoethyl methacrylate; 0.2-3.0 parts of terephthalaldehyde; 0.5-4.0 parts of tannic acid; and 1-8 parts of amino-terminated polydimethylsiloxane.

3. A low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film according to claim 1 or 2, characterized in that, The method for preparing the synergistically modified polymer matrix includes the following steps: (1) Add the acrylate main chain polymer to the reactor and heat it to the melting state under stirring to obtain a homogeneous polymer matrix system; (2) 2-aminoethyl methacrylate and terephthalaldehyde are added sequentially to the polymer matrix system and reacted under stirring conditions to form a stable modified structure in the system, thus obtaining an intermediate modified system. (3) Add tannic acid and amino-terminated polydimethylsiloxane to the intermediate modified system, continue the reaction under stirring and disperse fully, and cool after the reaction to obtain the synergistically modified polymer matrix.

4. The semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties according to claim 3, characterized in that, The reaction conditions for step (1) are stirring at 50-80°C, stirring speed of 200-500 r / min, and reaction time of 30-90 min.

5. The semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties according to claim 3, characterized in that, The reaction conditions for step (2) are as follows: the reaction is carried out at 60-100°C, the stirring speed is 300-700 r / min, and the reaction time is 60-180 min.

6. The semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties according to claim 3, characterized in that, The reaction conditions for step (3) are as follows: the reaction is carried out at 40-70°C, the stirring speed is 200-600 r / min, the reaction time is 30-120 min, and the reaction is allowed to cool naturally to room temperature after the reaction is completed.

7. The semiconductor wafer dicing protective film with low residue, heat resistance, and antistatic properties according to claim 1, characterized in that, The heat-resistant toughening agent is a mixture of polyethersulfone and polyetherimide in a mass ratio of 3:1; the antistatic agent is a mixture of sodium sulfonated polystyrene and polyvinylpyrrolidone in a mass ratio of 1:4; the residue-inhibiting agent is a mixture of polydimethylsiloxane oil and polytetrafluoroethylene micro powder in a mass ratio of 2:1; and the rheology modifier is a mixture of fumed silica and polyamide wax powder in a mass ratio of 3:

2.

8. A method for preparing a low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film, characterized in that, The preparation method includes the following steps: S1, the synergistically modified polymer matrix is ​​added to a mixing container, and an organic small molecule interface regulator is added under stirring conditions to fully disperse it, thus obtaining a matrix mixing system; S2, heat-resistant toughening agent, antistatic agent, residue inhibitor and rheology modifier are added sequentially to the matrix mixture system and mixed and dispersed under stirring conditions to obtain functional adhesive layer coating liquid; S3, the functional adhesive layer coating liquid is coated on the surface of the base film, and after drying, a functional adhesive layer is formed on the surface of the base film, resulting in a semiconductor wafer dicing protective film with low residue, heat resistance and antistatic properties.

9. The method for preparing a low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film according to claim 8, characterized in that, The reaction conditions for step S1 are: stirring and dispersing at 25–50°C, stirring speed of 200–500 r / min, and stirring time of 20–60 min; the reaction conditions for step S2 are: mixing and dispersing at 30–70°C, stirring speed of 300–700 r / min, and mixing time of 30–120 min.

10. The method for preparing a low-residue, heat-resistant, and antistatic semiconductor wafer dicing protective film according to claim 8, characterized in that, The reaction conditions for step S3 are as follows: film is formed by coating at a temperature of 30–60°C, followed by drying at 60–120°C for 5–30 minutes.

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