Indium sheet processing method and indium sheet processing machine

Abstract

A method for processing indium wafers is disclosed. In the method, a wafer head without any indium wafer is moved above a laser distance sensor to perform a first measurement operation by the laser distance sensor to obtain a reference height of the wafer head without any indium wafer. An indium wafer pickup operation is performed by the wafer head. After the indium wafer pickup operation, the wafer head is moved above the laser distance sensor to perform a second measurement operation by the laser distance sensor to obtain a detected height of the wafer head. A controller determines whether the amount of indium wafer pickup by the wafer head in the indium wafer pickup operation is abnormal based on the difference between the reference height and the detected height. The method can accurately measure and determine whether the amount of indium wafer pickup after the indium wafer pickup operation is abnormal, so that different subsequent actions can be performed according to the pickup situation to avoid processing of indium wafers in an abnormal amount to cause product scrap. The disclosure also relates to an indium wafer processing machine.

Description

Technical Field

[0001] This disclosure relates to a processing method and a processing machine, and particularly to a method for processing indium wafers and a processing machine for indium wafers. Background Technology

[0002] In the indium wafer bonding process, normally the bonding head picks up one indium wafer at a time and places it in the work area for bonding. However, during actual operation, the bonding head may pick up overlapping indium wafers. Because current technology lacks a mechanism to detect the height or thickness of the indium wafers, the bonding head will continue the bonding process regardless of whether it picks up a single indium wafer or two or more overlapping wafers. If the product is processed with multiple overlapping indium wafers, the height of the processed position will be higher than originally designed, potentially failing to meet the original design specifications and resulting in the product being scrapped.

[0003] Traditionally, heat sink overlap detection relies on optical sensors recording the Z-axis motor's ascent height on a machining center. The system determines if the heat sink is stacked once the motor reaches a height sufficient for light to pass through. A height exceeding the expected range indicates stacking. However, indium foil is a relatively new heat dissipation material with a very thin thickness, only 0.3 to 0.5 millimeters. Detecting indium foil thickness using optical sensors based on the Z-axis motor's ascent height lacks sufficient resolution and cannot accurately determine if stacking is present. Summary of the Invention

[0004] Therefore, one objective of this disclosure is to provide an indium sheet processing method and an indium sheet processing machine with high detection accuracy, capable of detecting extremely thin novel heat dissipation material indium sheets. Thus, using the processing method and machine of this disclosure, it is possible to correctly determine whether indium sheets are stacked, and remove indium sheets with abnormal stacking, avoiding the situation where stacked indium sheets are processed on products, causing the products to fail to meet the original design and thus requiring scrapping.

[0005] In accordance with the aforementioned objectives of this disclosure, a method for processing indium wafers is proposed. In this method, a wafer loading head without any indium wafer is moved above a laser rangefinder sensor to perform a first measurement operation using the laser rangefinder sensor, thereby obtaining a reference height for the wafer loading head without any indium wafer. An indium wafer pick-up operation is then performed using the wafer loading head. After the indium wafer pick-up operation, the wafer loading head is moved above the laser rangefinder sensor to perform a second measurement operation using the laser rangefinder sensor, thereby obtaining a detection height for the wafer loading head. A controller uses the difference between the reference height and the detection height to determine whether the amount of indium wafer picked up by the wafer loading head during the indium wafer pick-up operation is abnormal.

[0006] According to one embodiment of this disclosure, the determination of whether the amount of indium absorbed by the implantation head in the indium sheet pick-up operation is abnormal includes determining that the amount of indium absorbed by the implantation head in the indium sheet pick-up operation is normal when the difference between the reference height and the detection height is less than 1.2 times the thickness of the indium sheet and greater than 0.8 times the thickness of the indium sheet.

[0007] According to one embodiment of this disclosure, the determination of whether the amount of indium absorbed by the implantation head during the indium sheet pick-up operation is abnormal includes determining that the amount of indium absorbed by the implantation head during the indium sheet pick-up operation is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium sheet.

[0008] According to one embodiment of this disclosure, the aforementioned reference height is a first distance between the wafer loading head, which is not carrying any indium wafers, and the laser rangefinder, and the detection height is a second distance between the wafer loading head and the laser rangefinder after the indium wafer pick-up operation.

[0009] According to an embodiment of this disclosure, in the first measurement operation described above, a first height of the bottom of the graft head relative to the laser rangefinder is obtained using a laser rangefinder. A second height of the imaging plane of the graft head relative to the laser rangefinder is obtained using the laser rangefinder, wherein the imaging plane is not located at the bottom of the graft head. A first difference between the second height and the first height is used as a reference height. In the second measurement operation described above, a third height of the bottom of the graft head relative to the laser rangefinder is obtained using the laser rangefinder. A fourth height of the imaging plane of the graft head relative to the laser rangefinder is obtained using the laser rangefinder. A second difference between the fourth height and the third height is used as a detection height.

[0010] According to one embodiment of this disclosure, when it is determined that the amount of indium sheet picked up by the indium sheet pick-up head during the indium sheet pick-up operation is abnormal and the indium sheet pick-up head has picked up several indium sheets, the indium sheet processing method further includes using the indium sheet pick-up head to transport the indium sheets to a recycling area to recycle these indium sheets.

[0011] According to one embodiment of this disclosure, before performing the indium wafer pick-up operation using the wafer placement head, the indium wafer processing method further includes detecting the center position of the substrate in the working area using an upper detection device. When it is determined that the indium wafer pick-up amount by the wafer placement head is normal and the wafer placement head has picked up the indium wafer, the indium wafer processing method further includes using the wafer placement head to transport the indium wafer above the lower detection device, so as to detect the center position of the indium wafer using the lower detection device, and to perform an alignment operation using a controller based on the center position of the substrate and the center position of the indium wafer.

[0012] In accordance with the aforementioned objectives of this disclosure, an indium wafer processing machine is further provided, comprising a platform, at least one feeding device, a conveying device, at least one wafer placement head, at least one laser rangefinder sensor, and a controller. The platform has at least one working area and at least one feeding area. The feeding device is disposed in the feeding area and configured to supply a plurality of indium wafers. The conveying device is disposed in the working area and configured to convey a plurality of substrates in one direction. The wafer placement head is movable on the platform along the X-axis, Y-axis, and Z-axis, and is configured to pick up and convey indium wafers, and to attach these indium wafers to the substrates. The laser rangefinder sensor is disposed on the platform and configured to measure the reference height of the wafer placement head when no indium wafers are being conveyed, and the detection height of the wafer placement head after the wafer picking operation. The controller is signal-connected to the laser rangefinder sensor and configured to receive the reference height and the detection height, and determine whether the amount of indium wafer picked up by the wafer placement head during the wafer picking operation is abnormal based on the difference between the reference height and the detection height.

[0013] According to one embodiment of this disclosure, the platform further includes a recycling area. When it is determined that the indium sheet pick-up volume of the wafer transfer head is abnormal and the wafer transfer head has picked up several indium sheets, the wafer transfer head is further configured to transport the indium sheets to the recycling area for recycling.

[0014] According to one embodiment of this disclosure, the aforementioned indium wafer processing machine further includes at least one upper detection device and at least one lower detection device. The upper detection device is movably mounted on the platform and signal-connected to a controller. The upper detection device is configured to measure the center position of each substrate in the working area and transmit the center positions of these substrates to the controller. The lower detection device is mounted on the platform and signal-connected to the controller. The lower detection device is configured to measure the center position of the indium wafer picked up by the wafer loading head and transmit the center position of the indium wafer to the controller for alignment operation. Attached Figure Description

[0015] A better understanding of embodiments of the present disclosure can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features can be arbitrarily increased or decreased for clarity of discussion.

[0016] Figure 1 This is a schematic diagram illustrating an indium wafer processing machine according to one embodiment of the present disclosure.

[0017] Figure 2 This is a block diagram illustrating an indium wafer processing machine according to one embodiment of the present disclosure.

[0018] Figure 3 This is a schematic flowchart illustrating an indium sheet processing method according to a first embodiment of the present disclosure.

[0019] Figures 4 to 6 This is a schematic diagram of an apparatus for an intermediate step in the indium wafer processing method of the first embodiment.

[0020] Figure 7 This is a schematic flowchart illustrating an indium sheet processing method according to a second embodiment of the present disclosure.

[0021] Figures 8 to 10 This is a schematic diagram of an apparatus for an intermediate step in the indium wafer processing method of the second embodiment.

[0022] The reference numerals in the attached figures are explained as follows:

[0023] 100: Indium wafer processing machine

[0024] 110: Platform

[0025] 112: Work Area

[0026] 114: Material Supply Area

[0027] 116: Recycling Area

[0028] 120: Feeding device

[0029] 130: Transport device

[0030] 140: Implant head

[0031] 142: Bottom

[0032] 144: Image plane

[0033] 146: Spring

[0034] 150: Laser rangefinder sensor

[0035] 160: Controller

[0036] 170: Upper detection device

[0037] 180: Lower detection device

[0038] 200: Steps

[0039] 210: Steps

[0040] 220: Steps

[0041] 230: Steps

[0042] 300: Steps

[0043] 310: Steps

[0044] 320: Steps

[0045] 330: Steps

[0046] D1: First Distance

[0047] D2: Second Distance

[0048] D2': Second distance

[0049] H1: First Height

[0050] H2: Second Altitude

[0051] H3: Third Height

[0052] H3': Third Height

[0053] H4: Fourth Height

[0054] H4': Fourth Height

[0055] X: Direction

[0056] Y: direction

[0057] Z: Direction Detailed Implementation

[0058] The embodiments of this disclosure are discussed in detail below. However, it will be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific situations. The discussed and disclosed embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. All embodiments of this disclosure disclose a variety of different features, but these features may be implemented individually or in combination as needed.

[0059] In addition, the terms "first" and "second" used in this article do not specifically refer to order or sequence, but are only used to distinguish elements or operations described using the same technical terms.

[0060] The spatial relationship between the two elements described in this disclosure applies not only to the orientation shown in the accompanying drawings, but also to orientations not shown in the drawings, such as inverted orientations. Furthermore, the terms "connection," "electrical connection," or similar expressions used in this disclosure to refer to two components are not limited to a direct or electrical connection, but may also include indirect or electrical connections as needed.

[0061] Please refer to Figure 1 and Figure 2 These are schematic diagrams illustrating an indium wafer processing machine 100 according to one embodiment of the present disclosure. Figure 2This is a block diagram illustrating an indium wafer processing machine 100 according to an embodiment of the present disclosure. The indium wafer processing machine 100 is suitable for indium wafer placement operations in semiconductor manufacturing processes. The indium wafer processing machine 100 mainly includes a platform 110, at least one feeding device 120, a transport device 130, at least one wafer placement head 140, at least one laser rangefinder sensor 150, and a controller 160.

[0062] Platform 110 has at least one working area 112 and at least one feeding area 114. In some embodiments, such as Figure 1 As shown, the work area 112 is elongated and can be located adjacent to the center of the platform 110, and can span the platform 110 parallel to the X direction. The work area 112 can be located on the platform 110 in different orientations, which is not limited in this disclosure. The work area 112 provides space for substrate transport and processing operations. The number of feeding areas 114 can be the same as the work area 112, and they are respectively corresponding to the work area 112. The feeding areas 114 are located on the platform 110 and are located on one side of the corresponding work area 112. The feeding device 120 is correspondingly located in the feeding area 114 and can supply indium sheets required for indium sheet processing.

[0063] A transport device 130 is disposed in the work area 112. In an embodiment where the work area 112 is disposed parallel to the platform 110 in direction X, the transport device 130 can transport the substrate along direction X. A wafer placement head 140 is disposed on the platform 110 and can move along directions X, Y, and Z. Directions X, Y, and Z are perpendicular to each other. Each wafer placement head 140 can correspond to one work area 112 and one feeding device 120. The wafer placement head 140 can pick up the indium wafer supplied by the corresponding feeding device 120, transport the picked-up indium wafer to the corresponding work area 112, and attach the picked-up indium wafer to the substrate carried by the transport device 130 in the corresponding work area 112.

[0064] A laser rangefinder 150 corresponds to the feeding area 114. The laser rangefinder 150 is mounted on the platform 110. Figure 1 In this embodiment, the laser rangefinder 150 is located on one side of the work area 112 and adjacent to the corresponding feed area 114. The laser rangefinder 150 is configured to measure the reference height of the wafer loading head 140 when it is not carrying any indium wafers, and the detection height of the wafer loading head 140 after it has performed an indium wafer pick-up operation from the corresponding feed device 120.

[0065] Specifically, when the wafer loading head 140 is not carrying any indium wafers, the laser range sensor 150 can measure the distance between the bottom 142 of the wafer loading head 140, which has moved above it, and the imaging plane 144 of the wafer loading head 140, which is different from the bottom 142. The reference height can be obtained from these two distances. On the other hand, after the wafer loading head 140 performs an indium wafer picking operation, the laser range sensor 150 can again measure the distance between the bottom 142 of the wafer loading head 140, which has moved above it, and the imaging plane 144 of the wafer loading head 140, which is different from the bottom 142. The detection height can be obtained from the two distances measured again.

[0066] Please refer to Figure 2 The controller 160 can be integrated into the indium wafer processing machine 100 or set up independently. For example, the controller 160 can be integrated into the computer used with the indium wafer processing machine 100, such as an industrial computer, or it can be implemented directly in the central processing unit of the computer used with the indium wafer processing machine 100; alternatively, the controller 160 can also be set up independently on the platform 110, and there are no limitations on this. The controller 160 can be connected to the laser range sensor 150 via wired or wireless means. In this way, the controller 160 can receive the distance information measured by the laser range sensor 150. The controller 160 can use this distance information to obtain or calculate the reference height and the detection height. The controller 160 can then calculate the difference between the reference height and the detection height, and determine whether the amount of indium wafer picked up by the wafer pick-up head 140 is abnormal based on the difference between the reference height and the detection height.

[0067] exist Figure 1 In this embodiment, platform 110 further includes a recycling area 116. The recycling area 116 is located on one side of the work area 112, and on the same side as the feeding area 114. For example, when platform 110 has two feeding areas 114, the indium wafer processing machine 100 includes two laser range sensors 150 located between these two feeding areas 114, and the recycling area 116 can be located between the two laser range sensors 150. The recycling area 116 can be used to recycle abnormal indium wafers. When controller 160 determines that the indium wafer pick-up amount by the wafer loading head 140 is abnormal, and the wafer loading head 140 picks up more than two indium wafers, the wafer loading head 140 can transport these indium wafers to the recycling area 116 to recycle the indium wafers, avoiding the processing of products with abnormally large quantities of indium wafers.

[0068] In some embodiments, the indium wafer processing machine 100 further includes at least one upper detection device 170 and at least one lower detection device 180. The number of upper detection devices 170 and lower detection devices 180 corresponds to the number of working areas 112. The upper detection device 170 is movably mounted on the platform 110 and can be signal-connected to the controller 160 via wired or wireless means. The upper detection device 170 can measure the center position of each substrate in the working area 112 and transmit the center position of the substrate to the controller 160. The lower detection device 180 is mounted on the platform 110 and can be signal-connected to the controller 160 via wired or wireless means. After the wafer placement head 140 picks up the indium wafer, it moves above the lower detection device 180. The lower detection device 180 can measure the center position of the indium wafer picked up by the wafer placement head 140 and transmit the center position of the indium wafer to the controller 160. The controller 160 can use the information of the center position of the substrate and the information of the center position of the indium wafer to perform an alignment operation so that the indium wafer can be accurately attached to the substrate.

[0069] Please refer to the following at the same time Figures 1 to 6 ,in Figure 3 This is a schematic flowchart illustrating an indium wafer processing method according to a first embodiment of the present disclosure. Figures 4 to 6 This is a schematic diagram of an apparatus illustrating an intermediate step in the indium wafer processing method of the first embodiment. In the indium wafer processing method, step 200 can be performed first to move the wafer loading head 140, which is not carrying any indium wafer, above the corresponding laser rangefinder 150, and then a first measurement operation can be performed using this laser rangefinder 150, such as... Figure 4 As shown. In the first measurement operation, a first distance D1 is measured between the bottom 142 of the wafer mounting head 140 (without any indium wafers) and the laser range sensor 150 using a laser range sensor 150. In this embodiment, this first distance D1 is used as a reference height for the wafer mounting head 140 without any indium wafers. The laser range sensor 150 can transmit the measured first distance D1 to the controller 160 via signal transmission.

[0070] After obtaining the reference height of the wafer placement head 140, step 210 can be performed, whereby the wafer placement head 140 is moved above the corresponding feeding area 114, and the wafer placement head 140 is used to perform an indium wafer pick-up operation, so as to pick up the indium wafer from the feed area 114. Figure 1 The feeding device 120 picks up the indium sheet.

[0071] After the indium wafer pick-up operation, step 220 can be performed to move the wafer placement head 140 above the laser range sensor 150, and then a second measurement operation is performed using the laser range sensor 150. In the second measurement operation, the laser range sensor 150 measures the second distance D2 between the bottom 142 of the wafer placement head 140 after the indium wafer pick-up operation and the laser range sensor 150, such as... Figure 5As shown. At this time, the bottom 142 of the implantation head 140 has picked up the indium wafer, and the second distance D2 can be the distance between the indium wafer and the laser range sensor 150. In this embodiment, the second distance D2 is used as the detection height of the implantation head 140 after the indium wafer picking operation. The laser range sensor 150 can transmit the measured second distance D2 information to the controller 160 via signal transmission.

[0072] exist Figure 6 In this embodiment, the indium wafer pick-up operation results in wafer stacking. In this case, the laser range sensor 150 measures a second distance D2' between the bottom 142 of the wafer placement head 140 after the indium wafer pick-up operation and the laser range sensor 150 during the second measurement operation. In this case, the second distance D2' is the detection height of the wafer placement head 140 after the indium wafer pick-up operation. The laser range sensor 150 can also transmit the measured second distance D2' information to the controller 160 via signal transmission.

[0073] After obtaining the reference height and detection height, the controller 160 can proceed to step 230. In step 230, the controller 160 can first calculate the difference between the reference height and the detection height, and then, based on this difference, determine whether the indium wafer pick-up amount by the wafer placement head 140 during the indium wafer pick-up operation is abnormal. Figure 5 In the illustrated case, the implantation head 140 picks up only one indium wafer, indicating that the indium wafer pick-up volume during the indium wafer pick-up operation is normal. In some embodiments, the second distance D2 is essentially equal to the first distance D1 minus the thickness of the indium wafer. The thickness of the indium wafer is the difference between the detection height and the reference height.

[0074] Because the indium sheets may vary slightly in thickness due to manufacturing tolerances, or the laser rangefinder 150 may have measurement errors, in some embodiments, the controller 160 determines that the amount of indium sheet picked up by the indium sheet pick-up head 140 is normal when the difference between the reference height and the detection height is less than 1.2 times and greater than 0.8 times the thickness of the indium sheet.

[0075] exist Figure 6 In the scenario shown, the implantation head 140 picks up two indium sheets, indicating that the implantation head 140 has picked up a stack of indium sheets, and the amount of indium sheets picked up by the implantation head 140 during the indium sheet picking operation is abnormal. At this time, the difference between the second distance D2' and the first distance D1 calculated by the controller 160, that is, the difference between the reference height and the detection height, is significantly greater than the thickness of a single indium sheet, so it is determined that the indium sheet picking operation of the implantation head 140 is abnormal.

[0076] Considering the manufacturing tolerances of the indium sheet and the measurement error of the laser rangefinder 150, in some embodiments, the controller 160 determines that the amount of indium sheet picked up by the indium sheet pick-up head 140 is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium sheet.

[0077] Please refer to the following at the same time Figure 1 , Figure 2 ,and Figures 7 to 10 ,in Figure 7 This is a schematic flowchart illustrating an indium wafer processing method according to a second embodiment of the present disclosure. Figures 8 to 10 This is a schematic diagram illustrating an intermediate step in the indium wafer processing method of the second embodiment. In performing the indium wafer processing method of the second embodiment, step 300 can be performed first, where the wafer loading head 140, which is not carrying any indium wafer, is moved above the laser rangefinder 150, and then a first measurement operation is performed using the laser rangefinder 150, such as... Figure 8 As shown. In the first measurement operation, the distance between the bottom 142 of the implantation head 140 and the laser range sensor 150 is measured using the laser range sensor 150 to obtain a first height H1. Simultaneously, the distance between the image-capturing plane 144 of the implantation head 140 and the laser range sensor 150 is also measured using the laser range sensor 150 to obtain a second height H2. In this embodiment, the first difference between the first height H1 and the second height H2 is used as a reference height. The laser range sensor 150 can transmit the measured information of the first height H1 and the second height H2 to the controller 160 via signal transmission.

[0078] In some embodiments, the controller 160 calculates the first difference between the first height H1 and the second height H2, and after obtaining the reference height, step 310 can be performed. In step 310, the wafer placement head 140 is moved above the feeding area 114, and the wafer placement head 140 is used to perform an indium wafer picking operation to pick up the indium wafer from the feeding device 120.

[0079] After the indium wafer pick-up operation, step 320 can be performed to move the wafer placement head 140 above the laser rangefinder 150, and then use the laser rangefinder 150 to perform a second measurement operation. For example... Figure 9As shown, in the second measurement operation, the laser range sensor 150 measures the distance between the bottom 142 of the indium wafer pick-up head 140 and the laser range sensor 150 after the indium wafer pick-up operation to obtain a third height H3. Furthermore, the laser range sensor 150 measures the distance between the image-capturing plane 144 of the indium wafer pick-up head 140 and the laser range sensor 150 after the indium wafer pick-up operation to obtain a fourth height H4. In this embodiment, the second difference between the third height H3 and the fourth height H4 is used as the detection height. The laser range sensor 150 can transmit the measured information of the third height H3 and the fourth height H4 to the controller 160 via signal transmission.

[0080] exist Figure 10 In this embodiment, the indium wafer pick-up operation results in wafer stacking. In this case, the laser rangefinder 150 measures the distance between the bottom 142 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser rangefinder 150, and the distance between the imaging plane 144 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser rangefinder 150, respectively, to obtain a third height H3' and a fourth height H4'. In this embodiment, the second difference between the third height H3' and the fourth height H4' is used as the detection height. The laser rangefinder 150 can transmit the measured information of the third height H3' and the fourth height H4' to the controller 160 via signal transmission.

[0081] In some embodiments, the controller 160 can calculate a second difference between the third height H3 and the fourth height H4, or a second difference between the third height H3' and the fourth height H4', to obtain the corresponding detection height. After the controller 160 calculates the reference height and the detection height, step 330 can be performed. In step 330, the controller 160 can first calculate the difference between the reference height and the detection height, and then use the difference between the reference height and the detection height to determine whether the indium wafer pick-up amount of the wafer implantation head 140 is abnormal during the indium wafer pick-up operation. Figure 9 In the illustrated embodiment, the implantation head 140 picks up only one indium wafer, indicating that the indium wafer picking operation is normal. In some embodiments, the detection height at this time is essentially equal to the reference height plus the thickness of the indium wafer.

[0082] Considering the manufacturing tolerances of the indium sheet and the measurement error of the laser rangefinder 150, in some embodiments, the controller 160 determines that the amount of indium sheet picked up by the indium sheet pick-up head 140 is normal when the difference between the reference height and the detection height is less than 1.2 times and greater than 0.8 times the thickness of the indium sheet.

[0083] exist Figure 10In the scenario shown, the implantation head 140 picks up two indium sheets, indicating that the implantation head 140 has picked up a stack of indium sheets, and the amount of indium sheets picked up by the implantation head 140 during the indium sheet picking operation is abnormal. At this time, the difference between the reference height and the detection height calculated by the controller 160 is significantly greater than the thickness of a single indium sheet, and the controller 160 judges that the indium sheet picking operation of the implantation head 140 is abnormal based on this difference.

[0084] In other embodiments, taking into account the manufacturing tolerances and measurement errors of the indium sheet, the controller 160 determines that the amount of indium sheet absorbed by the indium sheet pick-up head 140 is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium sheet.

[0085] In the second embodiment, considering the elastic change caused by the spring 146 above the implantation head 140, the implantation head 140 may not return to its original height after performing the indium wafer pick-up operation. However, the relative distance between the imaging plane 144 and the bottom 142 of the implantation head 140 is fixed. Therefore, the difference between the detection height and the reference height obtained in the second embodiment is not affected by the elastic change. Thus, compared to the first embodiment, the second embodiment can more accurately determine whether abnormal wafer stacking occurs during the indium wafer pick-up operation of the implantation head 140.

[0086] In some embodiments, when the controller 160 calculates the difference between the reference height and the detection height and determines that the indium wafer pick-up operation of the wafer loading head 140 is abnormal—that is, the wafer loading head 140 may have picked up two or more indium wafers—the indium wafer processing method further utilizes the wafer loading head 140 to transport the abnormal number of indium wafers to the recycling area 116 for recycling. This prevents the abnormal number of indium wafers from being used in subsequent product processing, causing product defects or even scrapped products.

[0087] In some embodiments, before the indium wafer pick-up operation by the wafer placement head 140, the indium wafer processing method may utilize the upper detection device 170 to detect the center position of the substrate to be mounted in the working area 112 and transmit the center position information of the substrate to the controller 160. In the indium wafer processing method, after the wafer placement head 140 performs the indium wafer pick-up operation, and when the controller 160 determines that the amount of indium wafer picked up by the wafer placement head 140 is normal, the wafer placement head 140 first transports the indium wafer above the lower detection device 180, so that the lower detection device 180 can detect the center position of the indium wafer. Then, the lower detection device 180 transmits the center position information of the indium wafer to the controller 160. Subsequently, the controller 160 performs an alignment operation based on the obtained center position of the substrate and the center position of the indium wafer, thereby controlling the wafer placement head 140 to change the orientation of the picked-up indium wafer so that the center position of the indium wafer can be aligned with the center position of the substrate. In this way, the wafer attaching head 140 can accurately attach the indium wafer it has picked up to the substrate in the working area 112.

[0088] As can be seen from the above embodiments, the advantage of this disclosure is that the indium sheet processing method of this disclosure can measure and determine whether the amount of indium sheet absorbed after the indium sheet absorption operation is abnormal, and then perform different subsequent actions according to the absorption situation. When it is determined that the indium sheet absorption operation is abnormal, indium sheets with abnormal quantity can be excluded, avoiding the situation where abnormal quantity of indium sheets is processed on the product, causing subsequent product abnormalities that cannot complete the original design and must be scrapped.

[0089] Although this disclosure has been provided above with reference to embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make various changes and modifications without departing from the concept and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the claims.

Claims

1. A method for processing indium sheets, characterized in that, The indium wafer processing method includes: A wafer-mounting head without any indium wafers is moved above a laser rangefinder to perform a first measurement operation using the laser rangefinder to obtain a reference height of the wafer-mounting head without any indium wafers. This wafer pick-up head is used to perform an indium wafer pick-up operation. After the indium wafer pick-up operation, the wafer implantation head is moved above the laser rangefinder to perform a second measurement operation using the laser rangefinder to obtain a detection height of the wafer implantation head; and A controller uses the difference between the reference height and the detection height to determine whether the amount of indium wafer picked up by the implantation head during the indium wafer pick-up operation is abnormal.

2. The indium wafer processing method as described in claim 1, characterized in that, If the amount of indium absorbed by the implantation head during the indium sheet pick-up operation is abnormal, and the difference between the reference height and the detection height is less than 1.2 times the thickness of an indium sheet but greater than 0.8 times the thickness of the indium sheet, then the amount of indium sheet absorbed by the implantation head during the indium sheet pick-up operation is considered normal.

3. The indium wafer processing method as described in claim 1, characterized in that, If the difference between the reference height and the detection height is greater than 1.5 times the thickness of an indium sheet, it is determined that the amount of indium sheet absorbed by the implantation head during the indium sheet absorption operation is abnormal.

4. The indium wafer processing method as described in claim 1, characterized in that, The reference height is a first distance between the implantation head without any indium wafers and the laser rangefinder, and the detection height is a second distance between the implantation head and the laser rangefinder after the indium wafer pick-up operation.

5. The indium wafer processing method as described in claim 1, characterized in that, Performing this first measurement operation includes: The laser rangefinder is used to obtain a first height of the bottom of the implant head relative to the laser rangefinder. The laser rangefinder is used to obtain a second height of an image-capturing plane of the implantation head relative to the laser rangefinder, wherein the image-capturing plane is not located at the bottom; and The reference height is a first difference between the second height and the first height; and Performing this second measurement operation includes: The laser rangefinder is used to obtain a third height of the bottom of the implant head relative to the laser rangefinder. The laser rangefinder is used to obtain a fourth height of the imaging plane of the implantation head relative to the laser rangefinder; and The detection height is taken as a second difference between the fourth height and the third height.

6. The indium wafer processing method as described in claim 1, characterized in that, When it is determined that the amount of indium sheet picked up by the implantation head during the indium sheet picking operation is abnormal and the implantation head picks up multiple indium sheets, the indium sheet processing method further includes using the implantation head to transport the multiple indium sheets to a recycling area to recycle the multiple indium sheets.

7. The indium wafer processing method as described in claim 1, characterized in that, Before using the wafer pick-up head to perform the indium wafer pick-up operation, the indium wafer processing method further includes: The indium wafer processing method further includes using an upper detection device to detect the center position of a substrate in a working area, and when it is determined that the indium wafer pick-up amount by the wafer placement head is normal and the wafer placement head picks up an indium wafer, the indium wafer processing method further includes using the wafer placement head to transport the indium wafer above a lower detection device, so as to use the lower detection device to detect the center position of the indium wafer; and The controller performs an alignment operation based on the center position of the substrate and the center position of the indium wafer.

8. An indium wafer processing machine, characterized in that, The indium wafer processing machine includes: A platform having at least one work area and at least one material supply area; At least one feeding device is located in the at least one feeding area and configured to supply multiple indium wafers; A transport device is disposed in the at least one working area and configured to transport a plurality of substrates in one direction; At least one wafer transfer head is movable on the platform along an X-axis, a Y-axis, and a Z-axis, wherein the at least one wafer transfer head is configured to pick up and carry the plurality of indium wafers and attach the plurality of indium wafers to the plurality of substrates. At least one laser rangefinder sensor is disposed on the platform, wherein the at least one laser rangefinder sensor is configured to measure a reference height of the wafer loading head when it is not carrying any indium wafer, and a detection height of the wafer loading head after the wafer loading head has performed an indium wafer pick-up operation; and A controller is signal-connected to the at least one laser rangefinder sensor, wherein the controller is configured to receive the reference height and the detection height, and determine whether the amount of indium wafer picked up by the wafer implantation head during the indium wafer pick-up operation is abnormal based on a difference between the reference height and the detection height.

9. The indium wafer processing machine as described in claim 8, characterized in that, The platform also includes a recycling area. When it is determined that the amount of indium sheet absorbed by the implantation head during the indium sheet absorption operation is abnormal and the implantation head has absorbed multiple indium sheets, the implantation head is also configured to transport the multiple indium sheets to a recycling area for recycling.

10. The indium wafer processing machine as described in claim 8, characterized in that, The indium wafer processing machine also includes: At least one detection device is movably mounted on the platform and signal-connected to the controller, wherein the detection device is configured to measure a center position of each of the plurality of substrates in the at least one working area and transmit the plurality of center positions of the plurality of substrates to the controller. as well as At least one detection device is disposed on the platform and signal-connected to the controller, wherein the detection device is configured to measure the center position of an indium wafer picked up by the wafer implantation head and transmit the center position of the indium wafer to the controller for the controller to perform a alignment operation.

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