Plasma chamber backplate modifications

Abstract

A processing chamber for processing a substrate is provided. The processing chamber includes a chamber body disposed about an interior volume, a substrate support positioned in the interior volume, a showerhead positioned above the substrate support, and a backplate positioned above the showerhead. A plenum is formed between the showerhead and the backplate, the backplate includes a gas inlet, a first gas outlet positioned at a center of the backplate, and a first plurality of additional gas outlets fluidically coupled to the gas inlet by a plurality of internal passages of the backplate.

Description

Background Technology

[0001] field

[0002] Embodiments of this disclosure generally relate to modified backplanes for use in processing chambers, such as semiconductor plasma processing chambers.

[0003] Related technical descriptions

[0004] Plasma processing can be used to perform many processes on substrates, such as semiconductor substrates. Plasma-enhanced chemical vapor deposition (PECVD) can be used to deposit layers over a substrate. During a PECVD process, plasma can be formed by one or more precursor gases supplied to the interior space of a processing chamber located above the substrate. While PECVD processes can be used to form a variety of layers on a variety of substrates, they can also result in undesirable deposits inside the processing chamber. These undesirable deposits can ultimately affect the performed process, therefore the interior of the processing chamber must be cleaned to remove them.

[0005] One method of cleaning the interior of a processing chamber uses a remote plasma source to supply plasma of a cleaning agent, such as nitrogen trifluoride (NF3). Cleaning with plasma cleaning agents (such as NF3) can be costly and may ultimately damage components inside the processing chamber due to the corrosive nature of plasma species in the cleaning plasma, such as fluoride ions and free radicals. Furthermore, cleaning inside the processing chamber can often be uneven. For example, in some processing chambers, remote plasma can typically clean the center of the processing chamber at a faster rate than the outer portions of the chamber near the sidewalls.

[0006] Therefore, there is a continuous need to reduce the operational costs associated with cleaning the interior of the processing chamber without damaging the internal components, while achieving a high degree of uniformity in cleanliness during these cleaning procedures. Summary of the Invention

[0007] Embodiments of this disclosure generally relate to modified backplanes for use in processing chambers, such as semiconductor plasma processing chambers.

[0008] In one embodiment, a processing chamber for processing a substrate is provided. The processing chamber includes: a chamber body disposed around an internal space; a substrate support located within the internal space; a spray head positioned above the substrate support; and a back plate positioned above the spray head, wherein an air chamber is formed between the spray head and the back plate, the back plate including a gas inlet, a first gas outlet positioned at the center of the back plate, and a first plurality of additional gas outlets fluidly coupled to the gas inlet through a plurality of internal channels of the back plate.

[0009] In another embodiment, a processing system is provided, the processing system comprising: a radio frequency power supply; a remote plasma source; and a processing chamber for processing a substrate, the processing chamber comprising: a chamber body disposed around an internal space; a substrate support located within the internal space; a spray head positioned above the substrate support; and a back plate positioned above the spray head, the back plate comprising a gas inlet, a first gas outlet positioned at the center of the back plate, and a first plurality of additional gas outlets fluidly coupled to the gas inlet via a plurality of internal channels of the back plate, wherein the radio frequency power supply is connected to the back plate, a gas chamber is formed between the spray head and the back plate, and the remote plasma source is fluidly connected to the inlet of the back plate.

[0010] In another embodiment, a processing system is provided, the processing system comprising: a remote plasma source; a cleaning gas source fluidly coupled to the remote plasma source; and a processing chamber for processing a substrate, the processing chamber comprising: a chamber body disposed around an internal space; a substrate support located within the internal space; a spray head positioned above the substrate support; and a back plate positioned above the spray head, the back plate including a gas inlet, a first gas outlet positioned at the center of the back plate, and a first plurality of additional gas outlets passing through a plurality of internal channels of the back plate. A fluidly coupled gas inlet is provided, wherein each of the first plurality of additional gas outlets is located at a first distance from the center of the backplate; an RF power supply is connected to the backplate; a gas chamber is formed between the spray head and the backplate; and a remote plasma source is fluidly connected to the inlet of the backplate; and a controller is configured to: direct cleaning gas from the cleaning gas source to the remote plasma source; energize the remote plasma source to form a plasma of the cleaning gas directed to the remote plasma source; and introduce the plasma generated in the remote plasma source into the gas chamber formed between the spray head and the backplate through the first plurality of additional gas outlets of the backplate. Attached Figure Description

[0011] To enable a detailed understanding of the features described above, the disclosure, which has been briefly summarized above, can be further described with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be construed as limiting their scope, and other equally effective embodiments are permissible.

[0012] Figure 1A schematic side cross-sectional view of a processing system according to one embodiment is shown.

[0013] Figure 2A According to one embodiment Figure 1 A semi-transparent bottom view of the back panel.

[0014] Figure 2B According to one embodiment Figure 2A A semi-transparent bottom view of the first gas outlet in the middle.

[0015] Figure 2C Showing according to one embodiment Figure 2B Side view of the first channel in the middle.

[0016] For ease of understanding, where possible, the same reference numerals have been used to indicate common elements in the figures. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further elaboration. Detailed Implementation

[0017] Embodiments of this disclosure generally relate to improved backplanes for use in processing chambers, such as semiconductor plasma processing chambers. The backplane disclosed herein includes multiple internal channels and multiple outlets fluidly coupled to said internal channels, allowing for the dispersion of gas and / or plasma over a wider area compared to conventional backplanes. The gas and / or plasma is dispersed by the backplane into a gas chamber formed between the backplane and a spray head in the processing chamber. The spray head then distributes the gas and / or plasma supplied to the gas chamber into a process space between a substrate support and the spray head.

[0018] The internal channels and additional outlets of the backplate disclosed herein can be used to increase the cleaning rate of components in the outer regions of the interior space of a processing chamber, such as components near the sidewalls of the processing chamber. Increasing the cleaning rate of components in the outer regions of the interior space is useful because, otherwise, similar cleaning processes performed using a processing chamber with a conventional backplate would result in components in the outer regions of the interior space being cleaned at a significantly slower rate. With the backplate disclosed herein, components in the outer regions of the interior space can be cleaned at a rate consistent with that of components in the inner regions of the interior space. Because different parts of the interior space are cleaned at similar rates, operating costs are reduced, as less cleaning gas and / or cleaning plasma is required to clean the interior of the chamber to a sufficient level of cleanliness. Furthermore, cleaning components in the inner and outer regions of the interior space at similar rates prevents damage to components in the inner regions caused by excessive exposure to cleaning plasma when cleaning the interior space using a conventional backplate.

[0019] Figure 1A schematic side cross-sectional view of a processing system 100 according to one embodiment is shown. The processing system 100 includes a processing chamber 101, a process gas source 141, a cleaning gas source 142, an RF power supply 145, a remote plasma source 146, and a controller 185.

[0020] Processing chamber 101 includes a chamber body 102 and a cover 107 positioned (e.g., directly positioned) above the chamber body 102. The chamber body 102 and cover 107 are disposed around an interior space 110 of the processing chamber 101. The chamber body 102 includes one or more sidewalls 103 and a bottom 104. The processing chamber 101 also includes a slit valve 109 positioned within an opening in one of the sidewalls 103 of the chamber body 102. The slit valve 109 can be configured to open, thereby allowing the substrate 50 to move in and out of the interior space 110 of the processing chamber 101.

[0021] The processing chamber 101 also includes a back plate 200, a spray head 120, and a substrate support assembly 130. The substrate support assembly 130 includes a substrate support member 135 for supporting the substrate 50 during processing. The internal space 110 located between the spray head 120 and the substrate support member 135 is part of the process space 111.

[0022] The substrate support assembly 130 also includes a shaft 136 and an actuator 138 coupled to the substrate support 135. The actuator 138 may be configured to move the shaft 136, thereby raising and lowering the substrate support 135. In some embodiments, the actuator 138 may also be configured to rotate the shaft 136 and the substrate support 135 during processing. The substrate support assembly 130 may additionally include a first plurality of lifting rods 131 and a second plurality of lifting rods 132. The different lengths of the lifting rods 131, 132 in the Z direction may reduce the bending of the substrate 50 when the substrate 50 is supported by the lifting rods 131, 132.

[0023] One or more sidewalls 103 may include an inner flange 106 extending inward toward the substrate support 135. The inner flange 106 may extend around the entire interior space 110 (e.g., 360 degrees). The processing chamber 101 may further include a first liner 161 positioned on top of the inner flange 106, and a second liner 162 covering the portion of the inner surface of one or more sidewalls 103 above the inner flange 106 and below the spacer 126, which will be described further below. The liners 161 and 162 may be formed of a ceramic material, such as alumina (Al2O3). In some embodiments, the second liner 162 may be secured to one or more sidewalls 103 using a fastener 108.

[0024] A spray head 120 is positioned above a substrate support 135. A back plate 200 is positioned above the spray head 120. A gas chamber 112 is formed between the spray head 120 and the back plate 200. The spray head 120 includes a plurality of channels 122 for distributing gas and / or plasma into a process space 111 above the substrate support 135. The processing chamber 101 further includes a conduit 147 fluidly coupled to a process gas source 141 and a remote plasma source 146. The conduit 147 is further coupled to a gas inlet 201 of the back plate 200, such that gas and / or plasma can be distributed into the process space 111 through (1) the back plate 200, (2) the spray head 120, and (3) the back plate 200.

[0025] The backplate 200 includes a body 204 formed of a conductive material, such as aluminum. The backplate 200 further includes a gas inlet 201, a main gas outlet 202, a central cavity 203, a plurality of internal channels 205, a first plurality of auxiliary gas outlets 210, and a second plurality of auxiliary gas outlets 220. The main gas outlet 202 is located at the center 200C of the backplate 200. The first plurality of auxiliary gas outlets 210 and the second plurality of auxiliary gas outlets 220 are each coupled to the gas inlet 201 via the central cavity 203 and the internal channels 205. The main gas outlet 202, the first plurality of auxiliary gas outlets 210, and the second plurality of auxiliary gas outlets 220 are each configured to discharge gas and / or plasma into a gas chamber 112. A spray head 120 then distributes the gas and / or plasma from the gas chamber 112 into a process space 111 below the spray head 120.

[0026] The body 204 of the backplate 200 may include a plurality of sidewalls 207. In some embodiments, a plurality of internal channels 205 may be drilled through one of the sidewalls 207 through the body 204 to the central cavity 203. Furthermore, in some embodiments, as shown, a plug 208 may be positioned in the opening of the internal channel 205 at the sidewall 207 as shown, or at another location, for example, immediately downstream of the gas outlet 220 on the internal channel 205. The plug 208 prevents plasma and / or gas in the internal channel 205 from being discharged from the backplate 200 from a location other than the intended gas outlets 202, 210, 220.

[0027] Each of the internal channels 205 may have a relatively narrow cross-section (e.g., diameter) while having a substantially long length. For example, in some embodiments, each internal channel 205 may each have a length that is at least 25 times or at least 50 times the cross-sectional dimension (e.g., diameter) of the channel 205. In one embodiment, each channel 205 may have a diameter of about 0.5 inches to about 2.0 inches, such as about 1.0 inch, while having a length of about 20 inches to about 100 inches, such as about 40 inches. The configuration of the internal channels 205 extending outward from the central cavity 203 may be analogous to a narrow wheel spoke extending outward from the center of a wheel.

[0028] Gun drilling of the internal channels 205 allows them to be formed into an elongated profile resembling wheel spokes. This elongated profile of the internal channels 205 allows each of the channels 205 to be angularly spaced from the other channels 205 by a considerable angular distance. For example, Figure 2A Each of the eight internal channels 205 shown is spaced from the next nearest internal channel at approximately 40 to approximately 45 degrees. Multiple additional gas outlets 210, 220 may be spaced apart from each other at similar angular pitch. The elongated profile of the internal channels 205 and the relatively small footprint of the additional gas outlets 210, 220 allow for the provision of additional cleaning plasma to the outer portion of the internal space 110 during cleaning, improving the cleaning rate of the outer portion of the internal space 110 without significantly altering the spatial distribution of process gases above the substrate during processes such as deposition. Other designs for distributing gases and / or plasma to the outer region of the backplane interior having one or more large internal gas chambers (such as a single large cavity spanning a large portion of the backplane interior or two or more annular gas chambers) may improve the cleaning rate of the outer portion of the internal space 110, but may result in excessive process gas being directed to the outer region of the process space 111 during processing (e.g., deposition), which can reduce process outcomes (e.g., deposition rate and center-to-edge thickness uniformity) of processes performed on the substrate (e.g., deposition). By having each of the internal channels 205 originate from the central cavity 203, it is possible to achieve flow balance through the backplate, thereby improving the cleaning rate of the outer region of the internal space 110 without significantly reducing the process results of the process performed on the substrate.

[0029] RF power supply 145 may be electrically coupled to backplane 200. Processing chamber 101 may further include one or more supports 125. Supports 125 may be formed of a conductive material to electrically couple RF energy supplied to backplane 200 to spray head 120, such that RF energy applied to spray head 120 may be used to generate plasma in process space 111 during processing.

[0030] The chamber body 102 and cover 107 are electrically connected to ground. In some embodiments, the substrate support 135 may also be electrically coupled to ground, allowing plasma to be generated in the process space 111 by providing RF energy to the spray head 120, using the substrate support 135 as part of a return path to ground. In some embodiments, the substrate support 135 may include electrodes (not shown) electrically connected to the chamber body 102 as part of a path to ground. One or more sidewalls 103 of the chamber body 102 may include one or more inner flanges 105. The processing chamber 101 may include one or more spacers 126 positioned on one or more inner flanges 105 of one or more sidewalls 103. A backplate 200 may be positioned on one or more spacers 126. The one or more spacers 126 may be formed of an electrically insulating material to electrically isolate the backplate 200 from the chamber body 102. In one embodiment, the one or more spacers 126 are formed of a dielectric material.

[0031] One or more cleaning gases (e.g., NF3) may be supplied to a remote plasma source 146, enabling the remote plasma source 146 to generate plasma containing the one or more cleaning gases. The remote plasma source 146 may include an RF power supply or other energy source for generating plasma in the remote plasma source 146. The plasma generated by the remote plasma source 146 may then be supplied to the process space 111 via a backplane 200 and a spray head 120. Process gases from the process gas source 141 may be supplied to the process space 111 via a conduit 147, backplane 200, and spray head 120, following a similar gas flow path to the cleaning plasma.

[0032] The processing system 100 also includes a controller 185 for controlling the process executed by the processing system 100. The controller 185 can be any type of controller used in an industrial environment, such as a programmable logic controller (PLC). The controller 185 includes a processor 187, a memory 186, and input / output (I / O) circuitry 188. The controller 185 may further include one or more of the following components (not shown): one or more power supplies, clocks, communication components (e.g., network interface cards), and user interfaces typically found in controllers of semiconductor devices.

[0033] Memory 186 may include non-transitory memory. The non-transitory memory may be used to store programs and settings as described below. Memory 186 may include one or more readily available memory types, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, floppy disk, hard disk), or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM)).

[0034] Processor 187 is configured to execute various programs stored in memory 186, such as deposition and cleanup processes. During the execution of these programs, controller 185 can communicate with I / O devices via I / O circuitry 188. For example, during the execution of these programs and communication via I / O circuitry 188, controller 185 can control outputs, such as energizing RF power supply 145 or changing the position of a valve (not shown) to deliver process gas or cleanup plasma to the interior space 110 of processing chamber 101. Memory 186 may also include various operational settings for controlling processing system 100. For example, these settings may include the duration for which different valves remain open or closed during different deposition and cleanup processes.

[0035] Generally, conventional backplates for plasma processing chambers include a central opening, such as gas outlet 202, but do not include additional gas outlets 210, 220. Due to this configuration, cleaning procedures performed using conventional backplates typically result in components in the center of the interior space 110 (e.g., the center of the substrate support 135) being cleaned faster than components in the outer portions of the interior space 110, such as the exposed portions of sidewall 103, gaskets 161, 162, and support 125. These uneven cleaning rates result in: (1) the use of more cleaning gas than would be used with a more uniform cleaning rate; and (2) eventual damage to components in the center of the interior space 110, as these components are exposed to a large amount of cleaning plasma after being cleaned to a sufficient level, which shortens their lifespan.

[0036] By using the backplate 200, additional cleaning plasma can be provided through additional gas outlets 210, 220, and components in the outer portion of the interior space 110 can be cleaned at a higher rate. Cleaning these components in the outer portion of the interior space 110 allows for a more uniform cleaning rate between the inner and outer portions of the interior space 110. This improved cleaning uniformity allows components in both the inner and outer portions of the interior space 110 to reach a sufficient level of cleanliness approximately simultaneously during the cleaning process, preventing significant overexposure of components in the inner portion of the interior space 110 to the corrosive plasma of the cleaning agent, which can occur when cleaning rates are uneven. Therefore, the backplate disclosed herein allows the cleaning process to be completed more quickly with lower material costs (e.g., using less NF3), while also preventing reduced service life of components in the inner portion of the interior space 110 due to overexposure to plasma during uneven cleaning processes performed using conventional backplates.

[0037] Figure 2A According to one embodiment Figure 1A semi-transparent bottom view of the back panel 200. The view is described as semi-transparent because... Figure 2A Some of the internal components shown, such as internal channel 205, are actually not visible in the bottom view of back panel 200.

[0038] The back panel 200 includes four sidewalls 2071-2074. The back panel 200 includes a plurality of internal channels 205, a first plurality of additional gas outlets 210, and a second plurality of additional gas outlets 220. The plurality of internal channels 205 includes eight different internal channels 2051-2058, each internal channel 205 extending from an opening in one of the sidewalls 207 to a center 200C of the back panel 200. Each internal channel 205 may extend at different angles relative to the center 200C of the back panel 200. Each internal channel 205 may connect with a central cavity 203 (see...). Figure 1 Fluid coupling allows plasma and / or gas supplied to gas inlet 201 to be distributed to each of the plurality of additional gas outlets 210, 220 via central cavity 203 and internal channel 205.

[0039] The first plurality of auxiliary gas outlets 210 may include eight gas outlets 2101-2108, wherein each gas outlet 210 is fluidly coupled to a different one of the internal channels 2051-2058. Similarly, the second plurality of auxiliary gas outlets 220 may include eight gas outlets 2201-2208, wherein each gas outlet 220 is fluidly coupled to a different one of the internal channels 2051-2058. Each gas outlet 210 of the first plurality of auxiliary gas outlets 210 is located at a first distance D1 from the center 200C of the back panel 200. Each gas outlet 220 of the second plurality of auxiliary gas outlets 220 is located at a second distance D2 from the center 200C of the back panel 200. The second distance D2 is longer than the first distance D1. Figure 2A The distances D1 and D2 shown are merely exemplary distances, and the gas outlets 210 and 220 can be located at any distance from the center 200C of the back panel 200, including locations exactly near the center 200C, locations located on or adjacent to one of the sidewalls 207, and locations between the center 200C and the sidewall 207. Furthermore, some embodiments may include gas outlets, such as gas outlets 210 and 220, located at three or more distances from the center of the back panel.

[0040] When compared to the other gas outlets 210 in the first plurality of gas outlets 210, each gas outlet 210 is located at a different angular position relative to the center 200C of the back plate 200. Similarly, when compared to the other gas outlets 220 in the second plurality of gas outlets 220, each gas outlet 220 is located at a different angular position relative to the center 200C of the back plate 200. Figure 2AIn this configuration, each gas outlet 210 is located at the same angular position relative to its counterpart in the gas outlets 220 relative to the center 200C. However, in some embodiments, the gas outlets 210 and 220 may be staggered, and each gas outlet 210 may be positioned at an angular position relative to the center 200C that differs from the angular positions of some or all of the gas outlets 220 relative to the center 200C. In embodiments where the angular positions of the gas outlets 210 and one or more angular positions of the gas outlets 220 are staggered, the back panel may include additional internal channels 205 for these additional gas outlet positions. In embodiments that include gas outlets located at three or more different distances from the center of the back panel, the angular positions of the gas outlets at the different distances may be shared or staggered with other gas outlets among the three or more gas outlets.

[0041] Figure 2B According to one embodiment Figure 2A A semi-transparent bottom view of the first gas outlet 2101 in [the structure]. The view is described as semi-transparent because... Figure 2B Some internal components shown, such as those indicated by dashed lines, are actually not visible in the bottom view of the first gas outlet 2101. In some embodiments, the bottom view of the other gas outlets 210 may be consistent with... Figure 2B The views shown are identical. Similarly, in some embodiments, the bottom views of the other gas outlets 220 in the second plurality of gas outlets 220 may also be identical. Figure 2B The views shown are the same.

[0042] The first gas outlet 2101 includes a body 211, such as a metal body. The body 211 of the first gas outlet 2101 includes four gas channels 2171-2174. Each channel 217 is arranged symmetrically at different angular positions around a central vertical axis C extending through the center of the first gas outlet 2101. Other embodiments may include more or fewer channels 217. Furthermore, other embodiments may include those relative to… Figure 2B As shown in channel 217, there are channels at different distances from the central vertical axis C and oriented at different angles.

[0043] Each gas passage 217 includes a corresponding inlet opening 215 and a corresponding outlet opening 216. Each inlet opening 215 is fluidly coupled to an internal passage 205 extending through the internal volume of the backplate 200 (see...). Figure 2A An internal passage within a passage 217. Each passage 217 can extend outward as it extends downward from the inlet opening 215 to the outlet opening 216. The inlet opening 215 of each passage 217 can be located closer to the central vertical axis C than the outlet opening 216.

[0044] Figure 2CShowing according to one embodiment Figure 2B A side view of the first channel 2171 in the image. (See image for reference.) Figure 2C As shown, the inlet opening 2151 is located closer to the central vertical axis C than the outlet opening 2161. The channel 2171 is oriented at an angle Θ relative to the vertical direction V. The angle Θ can be from about 10 degrees to about 50 degrees, such as about 30 degrees relative to the vertical direction V. This orientation, which causes the channel 2171 to be angled outward away from the central vertical axis C as it extends downward, helps to disperse the gas and / or plasma flowing through the channel 2171 away from the gas outlet 2101 in the X and Y directions away from the gas outlet 2101 when the gas and / or plasma exits the outlet opening 216 of the gas outlet 2101 and enters the gas chamber 112.

[0045] While the foregoing describes embodiments of this disclosure, other and further embodiments may be devised without departing from its basic scope.

Claims

1. A processing chamber for processing a substrate, the processing chamber comprising: A chamber body, wherein the chamber body is arranged around an internal space; A substrate support member, wherein the substrate support member is located in the internal space; A spray head, the spray head being positioned above the substrate support; as well as A backplate positioned above the spray head, wherein an air chamber is formed between the spray head and the backplate, the backplate including a gas inlet, a first gas outlet positioned at the center of the backplate, and a first plurality of additional gas outlets fluidly coupled to the gas inlet through a plurality of internal channels of the backplate.

2. The processing chamber of claim 1, wherein each of the first plurality of additional gas outlets is located at a first distance from the center of the back plate.

3. The processing chamber of claim 2, wherein each of the first plurality of additional gas outlets is positioned at a different angular location relative to the center of the back plate.

4. The processing chamber of claim 1, wherein each of the first plurality of additional gas outlets includes a plurality of gas passages fluidly coupled to the gas chamber.

5. The processing chamber of claim 4, wherein each of the gas channels in each of the first plurality of additional gas outlets is oriented at an angle of about 10 degrees to about 50 degrees relative to the vertical direction.

6. The processing chamber as claimed in claim 2, wherein The backplate further includes a second plurality of additional gas outlets, which are fluidly coupled to the inlet of the backplate. Each of the second plurality of additional gas outlets is located at a second distance from the center of the back plate.

7. The processing chamber of claim 6, wherein each of the second plurality of additional gas outlets is positioned at a different angular location relative to the center of the back plate.

8. The processing chamber of claim 6, wherein each of the second plurality of additional gas outlets includes a plurality of gas passages fluidly coupled to the gas chamber.

9. The processing chamber of claim 8, wherein each of the gas passages in each of the second plurality of additional gas outlets is oriented at an angle of about 10 degrees to about 50 degrees relative to the vertical direction.

10. A processing system, the processing system comprising: RF power supply; Remote plasma source; as well as A processing chamber for processing a substrate, the processing chamber comprising: A chamber body, wherein the chamber body is arranged around an internal space; A substrate support member, wherein the substrate support member is located in the internal space; Spray head, the spray head being positioned above the substrate support; and A backplate, positioned above the spray head, includes a gas inlet, a first gas outlet located at the center of the backplate, and a plurality of additional gas outlets, the plurality of additional gas outlets being fluidly coupled to the gas inlet through a plurality of internal channels of the backplate. The radio frequency power supply is connected to the backplane. An air chamber is formed between the spray head and the back plate, and The remote plasma source is fluidly connected to the inlet of the backplate.

11. The processing system of claim 10, wherein each of the first plurality of additional gas outlets is located at a first distance from the center of the back plate.

12. The processing system of claim 11, wherein each of the first plurality of additional gas outlets is positioned at a different angular location relative to the center of the back plate.

13. The processing system of claim 10, wherein each of the first plurality of additional gas outlets includes a plurality of gas passages fluidly coupled to the gas chamber.

14. The processing system of claim 13, wherein each of the gas channels in each of the first plurality of additional gas outlets is oriented at an angle of about 10 degrees to about 50 degrees relative to the vertical direction.

15. The processing system of claim 11, wherein The backplate further includes a second plurality of additional gas outlets fluidly coupled to the inlet of the backplate, and Each of the second plurality of additional gas outlets is located at a second distance from the center of the back plate.

16. The processing system of claim 15, wherein each of the second plurality of additional gas outlets is positioned at a different angular location relative to the center of the back plate.

17. The processing system of claim 15, wherein each of the second plurality of additional gas outlets includes a plurality of gas passages fluidly coupled to the gas chamber.

18. The processing system of claim 17, wherein each of the gas channels in each of the second plurality of additional gas outlets is oriented at an angle of about 10 degrees to about 50 degrees relative to the vertical direction.

19. A processing system, the processing system comprising: Remote plasma source; A clean gas source, wherein the clean gas source is fluidly coupled to the remote plasma source; A processing chamber for processing a substrate, the processing chamber comprising: A chamber body, wherein the chamber body is arranged around an internal space; A substrate support member, wherein the substrate support member is located in the internal space; Spray head, the spray head being positioned above the substrate support; and A backplate, positioned above the spray head, includes a gas inlet, a first gas outlet located at the center of the backplate, and a plurality of additional gas outlets, the plurality of additional gas outlets being fluidly coupled to the gas inlet through a plurality of internal channels of the backplate. Each of the first plurality of additional gas outlets is located at a first distance from the center of the back plate. The radio frequency power supply is connected to the backplane. An air chamber is formed between the spray head and the back plate, and The remote plasma source is fluidly connected to the inlet of the backplate; and The controller is configured to: The cleaning gas is directed from the cleaning gas source to the remote plasma source; Powering the remote plasma source to form a plasma of the clean gas directed to the remote plasma source; and The plasma generated in the remote plasma source is introduced into the gas chamber formed between the spray head and the back plate through the first plurality of additional gas outlets of the back plate.

20. The processing system of claim 19, wherein The backplate further includes a second plurality of additional gas outlets, which are fluidly coupled to the inlet of the backplate. Each of the second plurality of additional gas outlets is located at a second distance from the center of the back plate.

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