Silicon-based OLED structure capable of reducing electrical crosstalk

Abstract

The utility model discloses a silicon-based OLED structure capable of reducing electrical crosstalk, which comprises a silicon substrate, an anode, a pixel definition layer, an organic layer, a cathode and a packaging layer which are sequentially arranged, and the pixel definition layer is internally provided with a group of convex blocking structures used for blocking transverse current; and the convex blocking structure is a sharp corner blocking structure. The silicon-based OLED capable of reducing the electrical crosstalk is reasonable in structural design, the current blocking structure can at least block a current transverse conduction path of pixels on the hole injection layer, the electrical crosstalk between the pixels is reduced, the power consumption of a product is improved, and the color purity and the contrast ratio of the product are improved; and the convex blocking structure is a sharp-corner blocking structure, so that the preparation is convenient.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon-based OLED, in particular to a silicon-based OLED structure capable of reducing electrical crosstalk. Background Art

[0002] Compared with traditional AMOLED display technology, silicon-based OLED microdisplay uses single-crystal silicon chips as the substrate and uses mature CMOS technology to make its pixel size smaller and more integrated. It can be made into near-eye display products comparable to large-screen displays and has attracted widespread attention. Based on its technical advantages and broad market, silicon-based OLED microdisplay will set off a new wave of near-eye display in the military and consumer electronics fields, bringing users an unprecedented visual experience.

[0003] Most of the existing silicon-based OLED full-color products use WOLED (white light OLED) + CF (color filter) technology, and the device structure used is generally a two-layer or single-layer single-line access silicon-based micro-display device; no matter which type of silicon-based micro-display device is used, it faces serious electrical crosstalk problems. The existence of electrical crosstalk will seriously affect the product's contrast, color purity and other optical parameters.

[0004] For example, Chinese patent CN111192905A discloses an organic light-emitting diode display device and a manufacturing method thereof, wherein the organic light-emitting diode display device includes a substrate, a thin-film transistor array substrate, a plurality of anodes, a pixel defining layer, a plurality of strip-shaped grooves arranged on the pixel defining layer, a light-emitting functional layer, and a cathode arranged on the light-emitting functional layer; wherein the light-emitting functional layer includes a hole injection layer covering the plurality of anodes and the pixel defining layer, and the thickness of the hole injection layer is less than the depth of the plurality of strip-shaped grooves, and the lateral current between each of the pixel intervals is blocked by the plurality of strip-shaped grooves; the groove depth needs to be precisely controlled, which is not convenient for preparation. Utility Model Content

[0005] In view of the shortcomings of the prior art, the utility model provides a silicon-based OLED structure for reducing electrical crosstalk, which can effectively reduce the electrical crosstalk between pixels and is easy to prepare.

[0006] In order to solve the above technical problems, the technical solution adopted by the utility model is:

[0007] The silicon-based OLED structure for reducing electrical crosstalk comprises a silicon substrate, an anode, a pixel definition layer, an organic layer, a cathode and a packaging layer arranged in sequence, wherein the pixel definition layer is provided with a group of protruding blocking structures for blocking lateral current.

[0008] Further:

[0009] The protruding blocking structure is a sharp-angle blocking structure or a sawtooth wave blocking structure.

[0010] The protruding blocking structure is arranged on the pixel definition layer.

[0011] The pixel definition layer and the protrusion blocking structure form a unit layer structure, and the unit layer structure is a single layer or a stacked layer structure.

[0012] The protruding blocking structure is a blocking structure of polystyrene micro-nanospheres, silicon dioxide micro-nanospheres, titanium dioxide micro-nanospheres or polymethyl methacrylate micro-nanospheres.

[0013] The pointed corner blocking structure is a pointed corner protruding structure formed by photo-pressing.

[0014] The sharp corner of the sharp corner blocking structure is wrapped by the organic layer, and the tip of the sharp corner blocking structure is arranged close to the edge of the organic layer.

[0015] The light source for generating the light pressure is an ultraviolet light source, an infrared light source or a laser light source.

[0016] Compared with the prior art, the utility model has the following advantages:

[0017] The silicon-based OLED structure for reducing electrical crosstalk is reasonably designed. Multiple raised blocking structures for blocking lateral current are arranged in the pixel definition layer. The current blocking structures can at least block the lateral current conduction path of the pixel on the hole injection layer, reduce the electrical crosstalk between pixels, improve the power consumption of the product, and help improve the color purity and contrast of the product. The raised blocking structure is a sharp-angle blocking structure, which is easy to prepare. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following is a brief description of the contents and symbols in the drawings of this specification:

[0019] Figure 1 This is a schematic diagram of the structure of the silicon-based OLED of the utility model.

[0020] Figure 2 This is a schematic diagram of the preparation process of the silicon-based OLED structure of the utility model.

[0021] In the figure:

[0022] 1. Silicon substrate, 2. Anode, 3. Pixel definition layer, 4. Blocking structure, 5. OLED organic layer, 6. Cathode, 7. Encapsulation layer, 8. Color film and cover structure. DETAILED DESCRIPTION

[0023] The specific implementation of the utility model will be further explained in detail below through the description of embodiments with reference to the accompanying drawings.

[0024] like Figure 1 As shown, the silicon-based OLED structure for reducing electrical crosstalk includes a silicon substrate 1, an anode 2, a pixel definition layer 3, an OLED organic layer 5, a cathode 6, an encapsulation layer 7, and a color film and cover structure 8 arranged in sequence; a group of protruding blocking structures 4 for blocking lateral current are provided in the pixel definition layer 3.

[0025] The raised blocking structure 4 is a sharp-angle blocking structure or a sawtooth wave blocking structure; a sharp-angle blocking structure is preferred; multiple sharp-angle blocking structures are arranged in the pixel definition layer to block the lateral current. The current blocking structure can at least block the lateral current conduction path of the pixel on the hole injection layer, reduce the electrical crosstalk between pixels, improve the product power consumption, and help improve the product color purity and product contrast; its raised blocking structure is a sharp-angle blocking structure, which is easy to prepare.

[0026] The protruding blocking structure is arranged on the pixel definition layer 3; the sharp corner of the sharp corner blocking structure is wrapped by the organic layer, and the tip of the sharp corner blocking structure is arranged close to the edge of the organic layer. The hole injection layer in the OLED device can be broken at the blocking structure, thereby blocking the lateral conduction path of the current of the pixel on the hole injection layer and reducing the electrical crosstalk between pixels.

[0027] The pixel definition layer and the protrusion blocking structure form a unit layer structure, and the unit layer structure is a single layer or a stacked layer.

[0028] The pointed-angle blocking structure is a pointed-angle protruding structure formed by light pressure; the protruding blocking structure is a blocking structure of polystyrene micro-nanospheres, silicon dioxide micro-nanospheres, titanium dioxide micro-nanospheres or polymethyl methacrylate micro-nanospheres.

[0029] The light source for generating the optical pressure is an ultraviolet light source, an infrared light source or a laser light source; the blocking structure is first formed into a film layer by CVD coating or evaporation, and then the desired structure is formed by optical pressure; the desired blocking structure is obtained by assembling the micro-nanospheres attached to the surface of the film in an array by optical pressure.

[0030] like Figure 2 As shown, the method for preparing a silicon-based OLED structure for reducing electrical crosstalk includes the following steps: providing a silicon substrate - making an anode on the substrate - making a pixel definition layer PDL on the anode - making a structural layer - photo-pressing the required blocking structure - making an OLED film layer - making a cathode layer and an encapsulation layer - making a color filter and other film layers.

[0031] When the film layer is treated by optical pressure, a tapered optical fiber is used to converge the light; the tapered optical fiber has a convergence effect on light, and when the converged light acts on the film, it can produce optical pressure in a smaller area, achieving higher resolution control.

[0032] The above is only an explanation of the preferred embodiments of the present invention. The above technical features can be arbitrarily combined to form multiple embodiments of the present invention.

[0033] The utility model is described above by way of example in conjunction with the accompanying drawings. It is obvious that the specific implementation of the utility model is not limited to the above-mentioned method. As long as various non-substantial improvements are made using the concept and technical solution of the utility model, or the concept and technical solution of the utility model are directly applied to other occasions without improvement, they are all within the protection scope of the utility model.

Claims

1. A silicon-based OLED structure for reducing electrical crosstalk, comprising a silicon substrate, an anode, a pixel definition layer, an organic layer, a cathode and an encapsulation layer arranged in sequence, characterized in that: A group of protruding blocking structures for blocking lateral current are arranged in the pixel definition layer.

2. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 1, characterized in that: The protruding blocking structure is a sharp-angle blocking structure or a sawtooth wave blocking structure.

3. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 1, characterized in that: The protruding blocking structure is arranged on the pixel definition layer.

4. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 1, characterized in that: The pixel definition layer and the protrusion blocking structure form a unit layer structure, and the unit layer structure is a single layer or a stacked layer structure.

5. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 1, characterized in that: The protruding blocking structure is a blocking structure of polystyrene micro-nanospheres, silicon dioxide micro-nanospheres, titanium dioxide micro-nanospheres or polymethyl methacrylate micro-nanospheres.

6. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 2, characterized in that: The pointed corner blocking structure is a pointed corner protruding structure formed by photo-pressing.

7. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 2, characterized in that: The sharp corner of the sharp corner blocking structure is wrapped by the organic layer, and the tip of the sharp corner blocking structure is arranged close to the edge of the organic layer.

8. The silicon-based OLED structure for reducing electrical crosstalk as claimed in claim 6, characterized in that: The light source for generating the light pressure is an ultraviolet light source, an infrared light source or a laser light source.

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