Display device

Abstract

The utility model relates to a display device. The display device includes a first emission area, a second emission area disposed adjacent to the first emission area, and a non-emission area; a base member disposed in the first emission region, the second emission region, and the non-emission region; a light emitting element portion including a first light emitting element disposed in the first emission region and a second light emitting element disposed in the second emission region; a wavelength conversion portion disposed on the light emitting element portion and including a first wavelength conversion pattern; a first insulating layer covering the first wavelength conversion pattern, opening at a portion disposed adjacent to the first emission region, and exposing a portion of the first wavelength conversion pattern; and a light blocking member disposed in the non-emission region and covering the portion of the first wavelength conversion pattern. The wavelength conversion portion is disposed in the second emission region.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0042115 filed in the Korean Intellectual Property Office (KIPO) on March 30, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments relate to a display device and a method for manufacturing the same. Background Art

[0004] As multimedia technology develops, the importance of display devices continues to increase. Therefore, various types of display devices, such as liquid crystal display devices, organic light emitting display devices, etc., have been developed.

[0005] The pixels of the display device emit light corresponding to each primary color. For example, the pixels of the display device can emit red light, green light, or blue light respectively. By controlling the brightness of the light emitted from each pixel, various colored images can be displayed by the display device.

[0006] As a method for enabling each pixel of a display device to display a primary color, there may be provided a method of providing a color conversion pattern or a wavelength conversion pattern on a light path from a light source to a viewer. Utility Model Content

[0007] The present disclosure provides a high-resolution display device including a wavelength conversion pattern and a method of manufacturing the same.

[0008] However, aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] According to one aspect of the present disclosure, a display device may include: a first emission region, a second emission region, and a non-emission region, the second emission region being disposed adjacent to the first emission region, and the non-emission region being disposed between the first emission region and the second emission region; a base member disposed in the first emission region, the second emission region, and the non-emission region; a light emitting element portion disposed on the base member and including a first light emitting element disposed in the first emission region and a second light emitting element disposed in the second emission region; a wavelength conversion portion disposed on the light emitting element portion and including a first wavelength conversion pattern disposed in the second emission region; a first insulating layer covering the first wavelength conversion pattern, opening at a portion disposed adjacent to the first emission region, and exposing a portion of the first wavelength conversion pattern; and a light blocking member disposed in the non-emission region and covering the portion of the first wavelength conversion pattern. The wavelength conversion portion may be disposed only in the second emission region between the first emission region and the second emission region.

[0010] In an embodiment, the display device may further include: a first color filter disposed on the first light emitting element in the first emission region; and a second color filter disposed on the first wavelength conversion pattern in the second emission region.

[0011] In an embodiment, the first color filter and the second color filter may be disposed on different layers, and the first color filter may be disposed closer to the light emitting element portion than the second color filter.

[0012] In an implementation, the first color filter may directly contact a side surface of the light blocking member.

[0013] In an embodiment, the second light emitting element may be a first color light emitting element emitting light of a first color, and the first wavelength conversion pattern may include a first wavelength converter converting the light of the first color into light of a second color.

[0014] In an implementation, the second color filter may be a color filter of a second color that transmits light of the second color.

[0015] In an embodiment, the first light emitting element may be a first color light emitting element that emits light of a first color, and the first color filter may include a first color filter that transmits the light of the first color.

[0016] In an implementation, the second color filter may be disposed on the first insulating layer.

[0017] In an embodiment, the display device may further include a second insulating layer disposed on the second color filter as a whole in a display region including the first emission region and the second emission region. The second insulating layer may be opened at a portion disposed adjacent to the first emission region to expose the portion of the first wavelength conversion pattern.

[0018] In an implementation, the light blocking member may be disposed directly on the second insulating layer and the portion of the first wavelength conversion pattern.

[0019] In an implementation, the first color filter may be disposed on the second insulating layer.

[0020] In an embodiment, the display device may further include: a low refraction pattern, which is arranged on the light emitting element portion in the second emission area and overlaps with the first wavelength conversion pattern in a plan view; and a third insulating layer, which covers the low refraction pattern, is opened at a portion adjacent to the first emission area, and exposes the portion of the first wavelength conversion pattern.

[0021] In an implementation, the low-refractive pattern and the third insulating layer may be sequentially disposed on the first insulating layer.

[0022] In an implementation, the light blocking member may directly contact the portion of the first wavelength conversion pattern.

[0023] In an embodiment, the display device may further include: a protective member disposed on a base member on which a light-emitting element portion is disposed; a color filter portion disposed on a surface of the protective member facing the light-emitting element portion and including a first color filter disposed in a first emission area and a second color filter disposed in a second emission area; and a second insulating layer covering the color filter portion.

[0024] In an embodiment, the wavelength conversion portion may be provided on a surface of the second insulating layer to face the light emitting element portion.

[0025] In an embodiment, the display device may further include a display area including a plurality of emission areas, the plurality of emission areas including a first emission area and a second emission area. The display area may include a first pixel column, in which a first emission area including a first light-emitting element and not including a wavelength conversion pattern and a second emission area including a second light-emitting element and a first wavelength conversion pattern are alternately arranged.

[0026] In an embodiment, the display area may further include a second pixel column in which third emission regions including a third light emitting element and a second wavelength conversion pattern and first emission regions including a first light emitting element and no wavelength conversion pattern are alternately arranged.

[0027] In an embodiment, the first insulating layer may be entirely disposed in the display area and cover the first wavelength conversion pattern and the second wavelength conversion pattern. The first insulating layer may be opened between the first emission area and the second emission area and expose the portion of the first wavelength conversion pattern. The first insulating layer may be opened between the first emission area and the third emission area and expose a portion of the second wavelength conversion pattern.

[0028] According to one aspect of the present disclosure, a method for manufacturing a display device may include: preparing a base component, in which a first emission area, a second emission area arranged adjacent to the first emission area, and a non-emission area arranged between the first emission area and the second emission area are defined; forming a sacrificial pattern in only the second emission area among the first emission area and the second emission area on the base component; forming a first insulating layer on the base component on which the sacrificial pattern is formed; exposing a portion of the sacrificial pattern by removing a portion of the first insulating layer in the non-emission area adjacent to the first emission area; forming a cavity corresponding to the sacrificial pattern and opening toward the first emission area by removing the sacrificial pattern; imparting liquid repellency to the first emission area and the second emission area by surface treating the surface of the first insulating layer; providing ink including a first wavelength converter to the first emission area, and filling the cavity with ink through the portion of the first insulating layer from which the first emission layer is removed to form a wavelength conversion pattern in the second emission area; and forming a light blocking member in the non-emission area, and covering the exposed surface of the wavelength conversion pattern exposed when a portion of the first insulating layer is removed with the light blocking member.

[0029] According to an embodiment of the present disclosure, a high-resolution display device including a wavelength conversion pattern and a method of manufacturing the same may be provided.

[0030] However, the effects according to the embodiments of the present disclosure are not limited to those described above as examples, and various other effects are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0032] Figure 1 is a schematic perspective view of a display device according to an embodiment;

[0033] Figure 2 is a schematic cross-sectional view showing a configuration of a display device according to an embodiment;

[0034] Figure 3 is a schematic cross-sectional view showing a configuration of a display device according to an embodiment;

[0035] Figure 4 is a schematic plan view showing a display area of ​​a display device according to an embodiment;

[0036] Figure 5 is a schematic plan view showing a display area of ​​a display device according to an embodiment;

[0037] Figure 6 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X1-X1';

[0038] Figure 7 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X2-X2';

[0039] Figure 8 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X1-X1';

[0040] Fig. 9 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X2-X2';

[0041] Fig.10 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X1-X1';

[0042] Fig.11 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X1-X1';

[0043] Fig.12 It is along Figure 4 A schematic cross-sectional view of a display device according to an embodiment taken along line X1-X1';

[0044] Figures 13 to 22 is based on Figure 6 A schematic cross-sectional view showing a method for manufacturing a display device according to an embodiment;

[0045] Fig.23 is available for use according to the implementation Fig.15 and Fig.16 A schematic plan view of a mask in a manufacturing step of;

[0046] Fig.24 is with Fig.23 The line X3-X3' corresponds to Fig.15 and Fig.16 A schematic cross-sectional view of a display device in a manufacturing step of ;

[0047] Figures 25 to 32 is based on Figure 8 A schematic cross-sectional view showing a method for manufacturing a display device according to an embodiment; and

[0048] Figures 33 to 41 is based on Fig.10 A schematic cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0049] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the devices or methods disclosed herein. However, it is apparent that various embodiments may be practiced without these specific details or with one or more equivalent arrangements. Here, various embodiments are not necessarily exclusive and do not limit the present disclosure. For example, a specific shape, configuration, and characteristics of an embodiment may be used or implemented in another embodiment.

[0050] The present disclosure will now be described more fully below with reference to the accompanying drawings, in which embodiments of the present disclosure are shown. However, the present disclosure may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be more thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0051] The term used herein is for the purpose of describing a particular embodiment, rather than being intended to limit. As used herein, unless the context clearly indicates otherwise, the singular "one", "a kind of" and "the" are intended to also include plural forms. In addition, when used in this specification, the term "comprises", "comprising", "including", "comprising", "comprising", "having (has)" and / or "having (having)" represent the existence of stated features, integral bodies, steps, operations, elements, parts and / or its groups, but do not exclude the existence or addition of one or more other features, integral bodies, steps, operations, elements, parts and / or its groups. It should also be noted that, as used herein, the term "substantially", "about" and other similar terms are used as approximate terms, and are not used as terms of degree, and therefore, are used to explain the measured values, calculated values ​​and / or the inherent deviation of the provided values ​​that those of ordinary skill in the art will recognize.

[0052] It will also be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it may be "directly on" or "directly connected to" another element or layer, or there may also be intervening layers. However, when an element or layer is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers. For this reason, the term "connected" may represent a physical, electrical and / or fluid connection with or without an intervening element. In addition, the first direction DR1, the second direction DR2, and the third direction DR3 are not limited to the three axes of a rectangular coordinate system (such as, the x-axis, the y-axis, and the z-axis), and may be interpreted in a broader sense. For example, the first direction DR1, the second direction DR2, and the third direction DR3 may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. Throughout the specification, the same reference numerals indicate the same parts.

[0053] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0054] When a component is described herein as being “connected” to another component or as being “connected to” another component, the components may be connected to each other as separate elements, or the components may be integral with each other.

[0055] Throughout the specification, when an element is referred to as being “connected” to another element, the element may be “directly connected” to the other element, or “electrically connected” to the other element with one or more intervening elements interposed therebetween. In addition, when an element is referred to as being “in contact with” or “in contact with” another element, etc., the element may be “electrically in contact with” or “physically in contact with” the other element; or “indirectly in contact with” or “directly in contact with” the other element.

[0056] Spatially relative terms such as "below," "down," "above," "on," "on the side," etc. may be used herein for descriptive purposes, and are therefore used to describe the relationship of one element to another element(s) as shown in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is turned over, the elements described as being "below" or "below" other elements or features will then be oriented to be "above" the other elements or features. Therefore, the exemplary term "below" can cover both the above and below orientations. In addition, the device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are therefore interpreted accordingly.

[0057] For the purpose of the present disclosure, the phrase “at least one of A and B” may be interpreted as only A, only B, or any combination of A and B. “At least one of X, Y, and Z,” “at least two of X, Y, and Z,” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. In addition, “at least two of X, Y, and Z” may be interpreted as two or more of X, Y, and Z, such as both X and Y, both X and Z, both Y and Z, or all of X, Y, and Z.

[0058] In the specification and claims, for the purpose of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in the sense of conjunctions or antonymous conjunctions and may be understood to be equivalent to "and / or".

[0059] According to the convention in the art, for functional blocks, units and / or modules, some embodiments are described and shown in the drawings. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits (such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, etc.) that can be formed using semiconductor-based preparation techniques or other manufacturing techniques. In the case where blocks, units and / or modules are implemented by microprocessors or other similar hardware, software (e.g., microcode) can be used to program and control the blocks, units and / or modules to perform the various functions discussed herein, and optionally, they can be driven by firmware and / or software. It is also considered that each block, unit and / or module can be implemented by dedicated hardware, or implemented as a combination of dedicated hardware that performs some functions and processors (e.g., one or more programmed microprocessors and related circuits) that perform other functions. In addition, without departing from the scope of the present disclosure, each block, unit and / or module of some exemplary embodiments can be physically divided into two or more interactive and discrete blocks, units and / or modules. Furthermore, the blocks, units and / or modules of some exemplary embodiments may be physically combined into more complex blocks, units and / or modules without departing from the scope of the present disclosure.

[0060] The features of each of the various embodiments of the present disclosure may be combined with each other partially or in whole, and may interact with each other differently technically, and the embodiments may be implemented independently of each other, or may be implemented together in association with each other.

[0061] Unless otherwise specified, the illustrated embodiments will be understood to provide exemplary features of the present disclosure. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter, individually or collectively referred to as "elements") of various embodiments may be combined, separated, interchanged and / or rearranged without departing from the present disclosure.

[0062] The use of cross-hatching and / or shading in the drawings is generally to make the boundaries between adjacent elements clear. Therefore, unless otherwise specified, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between illustrated elements, and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiments can be implemented differently, the specific processing order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or in an order opposite to the described order. In addition, the same reference numerals represent the same elements.

[0063] Various embodiments are described herein with reference to cross-sectional views and / or exploded views, which are schematic representations of embodiments and / or intermediate structures. Therefore, deviations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the specific illustrated shapes of the regions, but rather will include deviations in shape due to, for example, manufacturing. In this manner, the regions shown in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and therefore are not necessarily intended to be limiting.

[0064] The display surface may be parallel to the surface defined by the first direction DR1 and the second direction DR2. The normal direction of the display surface, i.e., the thickness direction of the display device DD, may indicate a third direction DR3. In the present specification, the expression "when viewed from the top" or "in a plan view" may indicate the situation when viewed from the third direction DR3. In the following, the front surface (or top surface) and the rear surface (or bottom surface) of each of the layers or units may be distinguished by the third direction DR3. However, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 may be relative concepts and may be converted relative to each other, for example, converted into opposite directions.

[0065] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted as an ideal or overly formal meaning unless clearly defined in the specification.

[0066] Figure 1 is a schematic perspective view of a display device DD according to an embodiment. Figure 1 A display device DD having a display panel, which is a component (eg, a main component) of the display device DD, is schematically shown.

[0067] refer to Figure 1, the display device DD can be applied to various electronic devices, that is, small and medium-sized electronic devices (such as tablet personal computers (PCs), smart phones, car navigation units, cameras, center information displays (CIDs) provided in vehicles, watch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), game consoles, etc.) and medium and large-sized electronic devices (such as televisions, external billboards, monitors, personal computers, laptop computers, etc.). However, the present disclosure is not limited thereto, and the display device DD may also be applied to other electronic devices without departing from the present disclosure.

[0068] In an embodiment, the display device DD may have a rectangular shape in a plan view. The display device DD may include two first sides extending in a first direction DR1 and two second sides extending in a second direction DR2 intersecting the first direction DR1. In an embodiment, a corner where the first side and the second side of the display device DD intersect may have a right angle. However, the present disclosure is not limited thereto, and in another embodiment, the corner may have a curved surface. In an embodiment, the first side may be shorter than the second side, but the present disclosure is not limited thereto. In another embodiment, the shape of the display device DD may have a circular shape or other shapes in a plan view.

[0069] The first direction DR1, the second direction DR2 and the third direction DR3 are defined as follows: Figure 1 As shown. The first direction DR1 and the second direction DR2 may intersect each other, the first direction DR1 and the third direction DR3 may intersect each other, and the second direction DR2 and the third direction DR3 may intersect each other. The first direction DR1 may be a vertical direction in the drawings, and the second direction DR2 may be a horizontal direction in the drawings. The third direction DR3 may be an upward direction in the drawings (or a thickness direction or a height direction of the display device DD).

[0070] The display device DD may include a display area DA and a non-display area NDA (also referred to as a "frame area"). The display area DA may be an area where an image is displayed, and includes pixels PX. The non-display area NDA may be an area other than the display area DA, and an image may not be displayed in the non-display area NDA. In an embodiment, the non-display area NDA may be disposed adjacent to the display area DA, and may surround the display area DA.

[0071] Figure 2 is a schematic cross-sectional view showing the configuration of a display device DD according to the embodiment.

[0072] refer to Figure 2 (with reference Figure 1), the display device DD may include a base member 100 (also referred to as a "base layer" or a "substrate"), and a panel circuit portion 200, a light emitting element portion 300, and a light conversion portion 400 sequentially disposed (or provided) on the base member 100. However, the structure of the display device DD is not limited thereto. For example, in another embodiment, the light emitting element portion 300 may be disposed on a surface of the base member 100, and the panel circuit portion 200 may be disposed on the light emitting element portion 300. In another embodiment, the panel circuit portion 200 may not be disposed or provided in the display panel of the display device DD.

[0073] The base member 100 may be a rigid or flexible substrate, a film, etc. In an embodiment, the base member 100 may be a glass substrate, a plastic substrate, etc. For example, the base member 100 may be a glass substrate, a quartz substrate, a glass ceramic substrate, a film substrate including a polymer organic material, and a plastic substrate. In an embodiment, the base member 100 may include a glass fiber reinforced plastic (FRP).

[0074] The panel circuit portion 200 may include circuit elements and wiring disposed inside the display panel. For example, the panel circuit portion 200 may include circuit elements (e.g., transistors and capacitors) disposed in the display area DA and constituting each of the pixel circuits in the pixel PX, and wiring electrically connected to the pixel PX. In an embodiment, the panel circuit portion 200 may also include at least a portion of a driving circuit portion that provides a driving signal to the pixel PX. For example, the panel circuit portion 200 may also include a circuit element of a gate driver that provides a gate driving signal (e.g., a scan signal) to the pixel PX. The circuit element of the gate driver may be disposed in the non-display area NDA, or may be disposed in a distributed manner within the display area DA.

[0075] The light emitting element portion 300 (also referred to as a "light source portion" or a "light emitting element layer") may include a light emitting element that serves as a light source for each of the pixels PX. For example, the light emitting element portion 300 may include a self-luminous element disposed or formed in each pixel PX. In an embodiment, the light emitting element portion 300 may be at least one of an organic light emitting diode, a quantum dot light emitting diode, an inorganic micron light emitting diode (e.g., a micron LED), an inorganic nano light emitting diode (e.g., a nano LED), etc., and a combination thereof. Hereinafter, in order to simplify the description, an embodiment in which the light emitting element is an organic light emitting element will be described.

[0076] The light conversion portion 400 may include a light conversion pattern (or a light conversion element) for converting or controlling light emitted from the light emitting element portion 300. For example, the light conversion portion 400 may include a pattern (or element) for converting a wavelength band of light generated by the light emitting element portion 300 and / or selectively transmitting light of a specific wavelength band among the light generated by the light emitting element portion 300.

[0077] In an embodiment, the light conversion portion 400 may include a wavelength conversion pattern (e.g., a pattern layer including a wavelength converter such as quantum dots, etc.), which is provided to at least some of the pixels PX and converts or transforms the wavelength of light emitted from the light emitting element of the pixel PX so that the pixel PX emits light of a color (e.g., a specific or selectable color). The light conversion portion 400 may also include a color filter (e.g., a color filter corresponding to the primary color of each pixel PX), which controls the transmission of light so that the pixel PX emits light corresponding to each primary color.

[0078] Figure 3 is a schematic cross-sectional view showing the configuration of a display device DD according to the embodiment.

[0079] refer to Figure 3 (with reference Figure 1 and Figure 2 ), the display device DD may further include a protection member 500 disposed (or provided) on the light conversion portion 400.

[0080] The protective member 500 may have a single or multiple insulating layers, or may be a glass substrate, a plastic substrate, etc., but the present disclosure is not limited thereto. The protective member 500 may be formed or disposed (e.g., directly formed or disposed) on the base member 100 on which the light emitting element portion 300 and the like are disposed, or may be disposed separately from the base member 100 and combined with the base member 100 by a sealing material, a filler, etc., or a combination thereof. In the case where the protective member 500 is disposed separately from the base member 100, the light conversion portion 400 may be formed or disposed (e.g., directly formed or disposed) on the base member 100 on which the light emitting element portion 300 and the like are disposed, or may be disposed or provided on the light emitting element portion 300 by a bonding process after being formed or disposed on the protective member 500 separately from the light emitting element portion 300.

[0081] Figure 3 Description of other configurations and Figure 2 The descriptions of the configurations are basically the same or similar, and the same descriptions will be omitted.

[0082] Figure 4 is a schematic plan view showing a display area DA of a display device DD according to an embodiment. Figure 4A portion of the display area DA corresponding to four pixel rows ROW1 , ROW2 , ROW3 , and ROW4 and four pixel columns COL1 , COL2 , COL3 , and COL4 is shown, and a structure (eg, overall structure) of the display area DA will be described below.

[0083] refer to Figure 4 (with reference Figures 1 to 3 ), the display area DA may include emission areas EA arranged in a plurality of pixel rows ROW1, ROW2, ROW3, ​​and ROW4 and pixel columns COL1, COL2, COL3, and COL4, and non-emission areas NEA disposed adjacent to (or surrounding) the emission areas EA. The emission area EA may be an area in which light generated by the light emitting element part 300 passes through the light conversion part 400 and is emitted to the outside of the display device DD. The non-emission area NEA may be an area in which light is not emitted, and may correspond to a light blocking area.

[0084] The light emitted from the emission area EA may be light corresponding to the primary color of the pixel PX corresponding to each of the emission areas EA. In an embodiment, the emission area EA may include a first emission area EA1 that emits light of a first color, a second emission area EA2 that emits light of a second color, and a third emission area EA3 that emits light of a third color. For example, the emission area EA may include a first emission area EA1 (e.g., an emission area of ​​a blue pixel) that emits blue light (e.g., blue light having a peak wavelength in the range of about 440nm to about 480nm), a second emission area EA2 (e.g., an emission area of ​​a red pixel) that emits red light (e.g., red light having a peak wavelength in the range of about 610nm to about 650nm), and a third emission area EA3 (e.g., an emission area of ​​a green pixel) that emits green light (e.g., green light having a peak wavelength in the range of about 510nm to about 550nm). However, the primary colors of the light emitted from each of the emission areas EA are not limited thereto.

[0085] In an embodiment, the light conversion portion 400 may include a wavelength conversion portion WCP disposed or provided only in some of the emission areas EA. For example, the wavelength conversion portion WCP may include a first wavelength conversion pattern WCP1 and a second wavelength conversion pattern WCP2, the first wavelength conversion pattern WCP1 being disposed in the second emission area EA2 and converting the light of the first color generated by the light emitting element in each of the second emission areas EA2 into the light of the second color, and the second wavelength conversion pattern WCP2 being disposed in the third emission area EA3 and converting the light of the first color generated by the light emitting element in each of the third emission areas EA3 into the light of the third color. The wavelength conversion portion WCP may not be disposed or provided in the first emission area EA1. In an embodiment, each of the first emission areas EA1 may not include a wavelength conversion pattern. The light of the first color generated by the light emitting element in each of the first emission areas EA1 may pass through the light conversion portion 400 and / or the protective member 500 and be emitted to the outside of the display device DD. In an embodiment, the light conversion portion 400 may further include a color filter disposed or provided in the emission area EA. Therefore, light corresponding to each primary color may be emitted from the emission area EA.

[0086] In an embodiment, at least one first emission area EA1 may be disposed (e.g., directly disposed) adjacent to the periphery of each of the second emission areas EA2. At least one first emission area EA1 may be disposed (e.g., directly disposed) adjacent to the periphery of each of the third emission areas EA3. Each of the first wavelength conversion pattern WCP1 disposed or provided in the second emission area EA2 and the second wavelength conversion pattern WCP2 disposed or provided in the third emission area EA3 may include a wavelength converter introduced through at least one adjacent first emission area EA1. Therefore, even in a high-resolution display device DD in which the width (e.g., the width W1 in the first direction DR1 and / or the width W2 in the second direction DR2) and / or the area of ​​each of the unit pixels UPA is reduced and the emission areas EA are densely disposed with a smaller area, the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 may be easily formed in the second emission area EA2 and the third emission area EA3, respectively, by an inkjet method. A detailed description thereof will be given below.

[0087] In an embodiment, the display area DA may include a unit pixel UPA, and the unit pixel UPA includes a plurality of pixel rows and / or pixel columns. Figure 4 It is shown that each of the unit pixels UPA includes four emission areas EA, in which two pixel rows (eg, ROW1 and ROW2) and two pixel columns (eg, COL1 and COL2) are arranged adjacent to each other. Figure 4, only one unit pixel UPA including four emission areas EA (eg, EA1, EA2, and EA3) arranged in first and second pixel rows ROW1 and ROW2 and first and second pixel columns COL1 and COL2 among the plurality of unit pixels UPA will be illustrated.

[0088] In an embodiment, each of the unit pixels UPA may include two first emission areas EA1, one second emission area EA2, and one third emission area EA3. For example, each unit pixel UPA may be composed of two first color pixels, one second color pixel, and one third color pixel.

[0089] However, the present disclosure is not limited thereto. For example, in another embodiment, each of the unit pixels UPA may include a first emission area EA1, a second emission area EA2, and a third emission area EA3. Figure 4 In the unit pixel UPA, one of the two first emission areas EA1 may be changed into or replaced by the non-emission area NEA, the transparent window area, the sensor area, etc.

[0090] In an embodiment, in each pixel column COL1, COL2, COL3 or COL4 of the display area DA, in the first direction DR1, the first emission area EA1 and the second emission area EA2 may be arranged sequentially or alternately, or the third emission area EA3 and the first emission area EA1 may be arranged sequentially or alternately. For example, in the odd pixel columns (e.g., the first pixel column COL1 and the third pixel column COL3) of the display area DA, the first emission area EA1 and the second emission area EA2 may be arranged alternately and repeatedly, and in the even pixel columns (e.g., the second pixel column COL2 and the fourth pixel column COL4) of the display area DA, the third emission area EA3 and the first emission area EA1 may be arranged alternately and repeatedly.

[0091] In an embodiment, in each pixel row ROW1, ROW2, ROW3 or ROW4 of the display area DA, in the second direction DR2, the first emission area EA1 and the third emission area EA3 may be arranged sequentially or alternately, or the second emission area EA2 and the first emission area EA1 may be arranged sequentially or alternately. For example, in the odd pixel rows (e.g., the first pixel row ROW1 and the third pixel row ROW3) of the display area DA, the first emission area EA1 and the third emission area EA3 may be arranged alternately and repeatedly, and in the even pixel rows (e.g., the second pixel row ROW2 and the fourth pixel row ROW4) of the display area DA, the second emission area EA2 and the first emission area EA1 may be arranged alternately and repeatedly.

[0092] In an embodiment, the first emission areas EA1 may be arranged in a checkerboard shape in a plan view in the display area DA. For example, in each pixel column COL1, COL2, COL3, or COL4 and each pixel row ROW1, ROW2, ROT3, or ROW4 of the display area DA, the first emission areas EA1 may be discontinuously arranged to be non-adjacent to each other. However, the arrangement structure of the emission areas EA is not limited thereto.

[0093] Figure 5 is a schematic plan view showing a display area DA of a display device DD according to an embodiment.

[0094] refer to Figure 5 (with reference Figures 1 to 4 ),and Figure 4 Compared with the width of the first emission area EA1, Figure 5 The width of the first emission area EA1 may be reduced. For example, by forming the width of each of the first emission areas EA1 to be smaller than the width of each of the second emission area EA2 and / or the third emission area EA3, the color balance of light emitted from each of the unit pixels UPA may be adjusted. Figure 5 In each of the first emission areas EA1, only the width in the second direction DR2 is reduced, but the present disclosure is not limited thereto. For example, in another embodiment, by reducing the width of each of the first emission areas EA1 in the first direction DR1 or reducing the width of each of the first emission areas EA1 in both the first direction DR1 and the second direction DR2, the color balance (e.g., white balance) of light emitted from each of the unit pixels UPA may be adjusted.

[0095] Figure 6 It is along Figure 4 Schematic cross-sectional view of the display device DD according to the embodiment, taken along line X1 - X1 ′. Figure 7 It is along Figure 4A schematic cross-sectional view of a display device DD according to an embodiment taken along line X2 - X2 ′.

[0096] refer to Figure 6 and Figure 7 (with reference Figures 1 to 5 ), the display device DD may include a base member 100, and a panel circuit portion 200, a light emitting element portion 300, and a light conversion portion 400 sequentially disposed (or provided) on the base member 100. In an embodiment, the display device DD may further include a panel circuit portion 200 disposed or provided on the light conversion portion (for example, see Figure 3 400) on the protective member (for example, see Figure 3 500) (e.g., an insulating layer or an upper substrate).

[0097] As described above, the base member 100 may be a rigid or flexible substrate, film, etc. In an embodiment, the base member 100 may further include a separate layer, such as a buffer layer or an insulating layer, disposed on the substrate, film, etc.

[0098] The display area DA may be defined in the base member 100, and the emission area EA and the non-emission area NEA may be defined in the display area DA. For example, the base member 100 may include the display area DA, and the display area DA may include the emission area EA and the non-emission area NEA. For example, a plurality of emission areas EA including a first emission area EA1, a second emission area EA2, and a third emission area EA3, and a non-emission area NEA disposed adjacent to (or surrounding) the emission area EA may be defined in the display area DA of the base member 100. For example, the display area DA may include the first emission area EA1, the second emission area EA2, and the non-emission area NEA. A portion of the non-emission area NEA may be disposed between adjacent emission areas EA in the first direction DR1 and the second direction DR2.

[0099] The panel circuit part 200 may be selectively disposed or provided on the base member 100. The panel circuit part 200 may include circuit elements such as transistors T, wirings, etc. In an embodiment, Figure 6 A transistor T electrically connected to the light emitting element ED of the pixel PX is schematically shown among the circuit elements provided to the panel circuit part 200. In an implementation, each of the transistors T may be a thin film transistor including polysilicon, a thin film transistor including an oxide semiconductor, or the like.

[0100] The insulating layer 210 may be disposed (or provided) on circuit elements such as transistors T, wiring, etc. In an embodiment, the insulating layer 210 may be a planarization layer. In an embodiment, the insulating layer 210 may be formed of an organic layer. For example, the insulating layer 210 may include acrylic resin, epoxy resin, imide resin, ester resin, etc., or a combination thereof.

[0101] The light emitting element portion 300 including the light emitting element ED may be disposed (or provided) on the panel circuit portion 200. The light emitting element ED may be disposed in the emission area EA, and each of the emission areas EA may include at least one light emitting element ED. For example, the first light emitting element ED1 may be disposed in the first emission area EA1, and the second light emitting element ED2 may be disposed in the second emission area EA2. Similarly, the third light emitting element ED3 may be disposed in the third emission area EA3. In an embodiment, the light emitting element ED may be formed (e.g., directly formed) on the base member 100 on which the panel circuit portion 200 is formed.

[0102] Each of the light emitting elements ED may include an anode electrode AE, a light emitting layer OL, and a cathode electrode CE. In an embodiment, the anode electrode AE, the light emitting layer OL, and the cathode electrode CE may be sequentially stacked on the insulating layer 210 of the panel circuit portion 200. However, the present disclosure is not limited thereto. For example, the cathode electrode CE may be disposed on the insulating layer 210 of the panel circuit portion 200, and the light emitting layer OL and the anode electrode AE ​​may be sequentially stacked on the cathode electrode CE. Each of the light emitting elements ED may penetrate the insulating layer 210 of the panel circuit portion 200 and be electrically connected to at least one circuit element (e.g., transistor T) constituting the pixel circuit of the corresponding pixel PX.

[0103] In an embodiment, the anode electrode AE ​​may be a reflective electrode, and the anode electrode AE ​​may include a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, etc., or an alloy thereof. In another embodiment, the anode electrode AE ​​may further include a metal oxide layer stacked or disposed on the metal layer. In an embodiment, each of the anode electrodes AE may have a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF, or a multilayer structure such as ITO / Ag / ITO, etc. In an embodiment, the anode electrodes AE may be formed as separate patterns separated from each other.

[0104] The pixel defining layer 310 may be disposed on the anode electrode AE. For example, the pixel defining layer 310 may be disposed on an end of the anode electrode AE ​​and a portion of the insulating layer 210. The pixel defining layer 310 may be disposed in the non-emission area NEA and may define an opening that exposes each of the anode electrodes AE corresponding to each of the emission areas EA. For example, the pixel defining layer 310 may define the emission area EA and the non-emission area NEA.

[0105] In an embodiment, the pixel defining layer 310 may include an organic insulating material including at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB). In an embodiment, the pixel defining layer 310 may overlap with the light blocking member BM in a plan view.

[0106] The light emitting layer OL may be disposed on the anode electrode AE ​​and the pixel defining layer 310. In an embodiment, the light emitting layer OL may have a shape of a continuous layer formed in the emission area EA and the non-emission area NEA. For example, the light emitting layer OL may have a shape of a common layer formed (e.g., integrally formed) in the display area DA. In an embodiment, the light emitting layer OL may emit light of a first color, and each of the light emitting elements ED may emit light of substantially the same color. For example, all of the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 may emit blue light.

[0107] The cathode electrode CE may be disposed on the light emitting layer OL. In an embodiment, the cathode electrode CE may have a semi-transmissive or transmissive characteristic. In the case where the cathode electrode CE has a semi-transmissive characteristic, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, etc., or a compound or mixture thereof (such as a mixture of Ag and Mg), or include a material having a multilayer structure such as LiF / Ca or LiF / Al. In the case where the cathode electrode CE has a thickness of tens to hundreds of angstroms, the cathode electrode CE may have a semi-transmissive characteristic.

[0108] In the case where the cathode electrode CE has a transmissive characteristic, the cathode electrode CE may include a transparent conductive oxide (TCO) or the like. For example, the cathode electrode CE may include tungsten oxide (W x O y ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc., or a combination thereof.

[0109] The first color light (eg, blue light) emitted from each of the first light emitting elements ED1 may pass through the first color filter CF1 and be emitted to the outside. Thus, the first color light may be emitted from the first emission area EA1.

[0110] The first color light (e.g., blue light) emitted from each of the second light emitting elements ED2 may be converted into the second color light (e.g., red light) by passing through the first wavelength conversion pattern WCP1 and passing through the second color filter CF2 to be emitted to the outside. Therefore, the second color light may be emitted from the second emission area EA2.

[0111] The first color light (e.g., blue light) emitted from each of the third light emitting elements ED3 may be converted into the third color light (e.g., green light) by passing through the second wavelength conversion pattern WCP2 and passing through the third color filter CF3 to be emitted to the outside. Therefore, the third color light may be emitted from the third emission area EA3.

[0112] The encapsulation layer 320 may be disposed or provided on the cathode electrode CE. The encapsulation layer 320 may be commonly disposed in the emission area EA and the non-emission area NEA. In an embodiment, the encapsulation layer 320 may cover (e.g., directly cover) the cathode electrode CE. In an embodiment, a capping layer (not shown) covering the cathode electrode CE may be disposed between the encapsulation layer 320 and the cathode electrode CE, and the encapsulation layer 320 may cover (e.g., directly cover) the capping layer.

[0113] In an embodiment, the encapsulation layer 320 may include a first encapsulation layer 321, a second encapsulation layer 323, and a third encapsulation layer 325 sequentially stacked on the cathode electrode CE. In an embodiment, each of the first encapsulation layer 321 and the third encapsulation layer 325 may include an inorganic layer including silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, etc., or a combination thereof. In an embodiment, the second encapsulation layer 323 may include an organic layer including acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc. However, the structure of the encapsulation layer 320 and the material constituting the encapsulation layer 320 are not limited thereto.

[0114] The encapsulation layer 320 may constitute the light emitting element portion 300 together with the light emitting element ED. In another embodiment, the encapsulation layer 320 may be a separate member from the light emitting element portion 300.

[0115] The light conversion part 400 may be disposed (or provided) on the light emitting element part 300. The light conversion part 400 may include a wavelength conversion part (eg, see Figure 4 In an embodiment, the light conversion portion 400 may further include at least one of a first insulating layer 410 (or a first capping layer), a second insulating layer 420 (or a second capping layer), a third insulating layer 430 (or a third capping layer), a fourth insulating layer 440, and a fifth insulating layer 450. In an embodiment, the wavelength conversion portion (for example, see the embodiment of the present invention) may be formed on the base member 100 on which the light emitting element portion 300 is formed (for example, directly formed). Figure 4 WCP), color filter part CF, light blocking member BM, etc.

[0116] Wavelength conversion part (see, for example, Figure 4 The wavelength conversion portion (eg, WCP) may include a first wavelength conversion pattern WCP1 disposed in the second emission area EA2 and a second wavelength conversion pattern WCP2 disposed in the third emission area EA3, which are disposed on the light emitting element portion 300. In an embodiment, the wavelength conversion portion (eg, see Figure 4 The WCP) may not be disposed or provided in the first emission area EA1. In an embodiment, the wavelength conversion portion (eg, see Figure 4 The WCP) can be formed by an inkjet method.

[0117] The first wavelength conversion pattern WCP1 may be disposed on the second light emitting element ED2 and may be disposed in the second emission area EA2. In each of the second emission areas EA2, the first wavelength conversion pattern WCP1 may overlap the second color filter CF2 in a plan view. For example, the first wavelength conversion pattern WCP1 may be disposed below the second color filter CF2.

[0118] In an embodiment, the first wavelength conversion pattern WCP1 may have a larger area and / or a larger width than the second emission area EA2, and an end of the first wavelength conversion pattern WCP1 may be disposed in the non-emission area NEA. For example, with respect to the first direction DR1, both ends of the first wavelength conversion pattern WCP1 may be disposed in the non-emission area NEA between the first emission area EA1 and the second emission area EA2.

[0119] In an embodiment, the first wavelength conversion pattern WCP1 may be disposed or provided under the first insulating layer 410, and may fill a first space SPA1 opened toward the adjacent first emission area EA1 through a first opening OPN1 formed in the first insulating layer 410 and / or the second insulating layer 420 between the first emission area EA1 and the second emission area EA2 adjacent in the first direction DR1 (and / or in a direction opposite to the first direction DR1). For example, in the non-emission area NEA between the first emission area EA1 and the second emission area EA2 adjacent in the first direction DR1, the first wavelength conversion pattern WCP1 may fill a first space SPA1 of a structure (for example, a tunnel structure extending in the first direction DR1 and forming the first opening OPN1 at both ends in the first direction DR1) whose ends in the first direction DR1 are not covered by the first insulating layer 410 and are open. The first opening OPN1 may be covered by the light blocking member BM disposed or provided in the non-emission area NEA. Therefore, the first space SPA1 may be closed by the light blocking member BM.

[0120] The first wavelength conversion pattern WCP1 may emit light by converting or transforming the peak wavelength of incident light to another peak wavelength (e.g., a specific peak wavelength). For example, the first wavelength conversion pattern WCP1 may convert the first color light (e.g., blue light) emitted from each of the second light emitting elements ED2 into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emit the red light.

[0121] In an embodiment, each of the first wavelength conversion patterns WCP1 may include a first base resin BS1 and first wavelength converters WS1 dispersed in the first base resin BS1. In an embodiment, each of the first wavelength conversion patterns WCP1 may further include first scatterers SC1 dispersed in the first base resin BS1.

[0122] The first base resin BS1 may include a material having high light transmittance. In an embodiment, the first base resin BS1 may include an organic material. For example, the first base resin BS1 may include an organic material such as epoxy resin, acrylic resin, cardo resin, imide resin, etc., or a combination thereof.

[0123] The first wavelength converter WS1 can convert or transform the peak wavelength of the incident light to another peak wavelength (e.g., a specific peak wavelength). For example, the first wavelength converter WS1 can convert the first color light (e.g., blue light) provided from the second light emitting element ED2 into a second color light (e.g., red light having a single peak wavelength in the range of about 610 nm to about 650 nm) and emit red light.

[0124] For example, the first wavelength converter WS1 may include quantum dots, quantum rods, phosphors, etc. or a combination thereof. For example, the first wavelength converter WS1 may include quantum dots including a granular material that emits light of a color (eg, a specific or selectable color) when electrons transition from a conduction band to a valence band.

[0125] The first wavelength converter WS1 may include quantum dots including semiconductor nanocrystal materials. Depending on the composition and size of the quantum dots, the quantum dots may have a band gap (e.g., a specific or selectable band gap). Therefore, the quantum dots may absorb light and emit light having a wavelength (e.g., an intrinsic wavelength). For example, the first wavelength converter WS1 including quantum dots may include semiconductor nanocrystals, such as group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, etc., or a combination thereof.

[0126] The II-VI compounds may be selected from the group consisting of binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; ternary compounds such as AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, C dZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0127] The III-V compounds can be selected from the group consisting of: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, GaAlNP and mixtures thereof.

[0128] The IV-VI group compound may be selected from the group consisting of: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge or mixtures thereof. The IV group compound may be selected from the group consisting of: binary compounds such as SiC, SiGe or mixtures thereof.

[0129] The binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle divided into a state where the concentration distribution is partially different. In addition, the particle may have a core-shell structure in which a quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0130] In an embodiment, the quantum dot may have a core-shell structure including a core comprising the nanocrystal described above and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for maintaining semiconductor properties by preventing chemical modification of the core, and / or may be used as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may have a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. For example, the shell of the quantum dot may include a metal oxide, a non-metal oxide, a semiconductor compound, etc., or a combination thereof.

[0131] For example, metal oxides or non-metal oxides may include binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO, etc. or mixtures thereof; or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4、 CoMn 2 O 4 etc. or mixtures thereof, but the present disclosure is not limited thereto.

[0132] The semiconductor compound may be, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., or a combination thereof, but the present disclosure is not limited thereto.

[0133] In an embodiment, the light emitted from the first wavelength converter WS1 may have a full width at half maximum (FWHM) of an emission wavelength spectrum less than or equal to about 45 nm. In an embodiment, the light emitted from the first wavelength converter WS1 may have a FWHM of an emission wavelength spectrum less than or equal to about 40 nm. In an embodiment, the light emitted from the first wavelength converter WS1 may have a FWHM of an emission wavelength spectrum less than or equal to about 30 nm. Therefore, the purity and reproducibility of the color displayed by the display device DD may be further improved. The light emitted from the first wavelength converter WS1 may be emitted in various directions regardless of the incident direction of the incident light. Therefore, the side visibility of the second color light emitted from each of the second emission areas EA2 may be improved.

[0134] Some of the light of the first color provided from each of the second light emitting elements ED2 may pass through the first wavelength conversion pattern WCP1 without being converted into light of the second color by the first wavelength converter WS1. The light of the first color incident to the second color filter CF2 without being converted by the first wavelength conversion pattern WCP1 may be blocked by the second color filter CF2. On the other hand, the light of the second color converted from the light of the first color provided from each of the second light emitting elements ED2 by the first wavelength conversion pattern WCP1 may pass through the second color filter CF2 and be emitted to the outside. Therefore, the light of the second color may be emitted from the second emission area EA2.

[0135] The first scatterer SC1 and the first base resin BS1 may have different refractive indices and form an optical interface. For example, the first scatterer SC1 may be light scattering particles. The first scatterer SC1 is not particularly limited as long as it is a material capable of scattering at least a portion of the transmitted light, and in an embodiment, the first scatterer SC1 may be metal oxide particles, organic particles, etc., or a combination thereof. For example, the first scatterer SC1 may include a metal oxide such as titanium oxide (TiO 2 )、ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 )、ZnO、SnO 2 ), etc. or a combination thereof. For example, the first scatterer SC1 may include organic particles including acrylic resin, urethane resin, etc. or a combination thereof. The first scatterer SC1 may scatter light in random directions regardless of the incident direction of the incident light without substantially converting the wavelength of the light passing through the light conversion portion 400.

[0136] The second wavelength conversion pattern WCP2 may be disposed on each of the third light emitting elements ED3 and may be disposed in each of the third emission areas EA3. In each of the third emission areas EA3, the second wavelength conversion pattern WCP2 may overlap the third color filter CF3 in a plan view. For example, the second wavelength conversion pattern WCP2 may be disposed below the third color filter CF3.

[0137] In an embodiment, the second wavelength conversion pattern WCP2 may have a larger area and / or a larger width than the third emission area EA3, respectively, and ends of the second wavelength conversion pattern WCP2 may be respectively disposed in the non-emission area NEA. For example, with respect to the first direction DR1, both ends of the second wavelength conversion pattern WCP2 may be disposed in the non-emission area NEA between the first emission area EA1 and the third emission area EA3.

[0138] In an embodiment, the second wavelength conversion pattern WCP2 may be disposed or provided under the first insulating layer 410, and may fill the second space SPA2 opened toward the adjacent first emission area EA1 through the second opening OPN2, respectively, which is formed in the first insulating layer 410 and / or the second insulating layer 420 between the first emission area EA1 and the third emission area EA3 adjacent in the first direction DR1 (and / or in a direction opposite to the first direction DR1). For example, in the non-emission area NEA between the first emission area EA1 and the third emission area EA3 adjacent in the first direction DR1, the second wavelength conversion pattern WCP2 may fill the second space SPA2 of a structure (for example, a tunnel structure extending in the first direction DR1 and forming the second opening OPN2 at both ends in the first direction DR1) whose ends in the first direction DR1 are not covered by the first insulating layer 410 and are open. The second opening OPN2 may be covered by the light blocking member BM disposed or provided in the non-emission area NEA. Therefore, the second space SPA2 may be closed by the light blocking member BM.

[0139] The second wavelength conversion pattern WCP2 can emit light by converting or transforming the peak wavelength of the incident light to another peak wavelength (e.g., a specific peak wavelength). For example, the second wavelength conversion pattern WCP2 can convert the first color light (e.g., blue light) emitted from each of the third light emitting elements ED3 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit green light.

[0140] In an embodiment, each of the second wavelength conversion patterns WCP2 may include a second base resin BS2 and second wavelength converters WS2 dispersed in the second base resin BS2. In an embodiment, each of the second wavelength conversion patterns WCP2 may further include second scatterers SC2 dispersed in the second base resin BS2.

[0141] The second base resin BS2 may include a material having high light transmittance. In an embodiment, the second base resin BS2 may include an organic material. For example, the second base resin BS2 and the first base resin BS1 may include the same material, or the second base resin BS2 may include at least one of the materials described as examples of constituent materials of the first base resin BS1.

[0142] The second wavelength converter WS2 can convert or transform the peak wavelength of the incident light to another peak wavelength (e.g., a specific peak wavelength). For example, the second wavelength converter WS2 can convert the first color light (e.g., blue light) provided from the third light emitting element ED3 into a third color light (e.g., green light having a peak wavelength in the range of about 510 nm to about 550 nm).

[0143] For example, the second wavelength converter WS2 may include quantum dots, quantum rods, phosphors, etc. or a combination thereof. The description of the second wavelength converter WS2 is substantially similar to the description of the first wavelength converter WS1, and the same description will be omitted.

[0144] In an embodiment, both the first wavelength converter WS1 and the second wavelength converter WS2 may be formed of quantum dots. The particle size of the quantum dots forming the first wavelength converter WS1 may be greater than the particle size of the quantum dots forming the second wavelength converter WS2.

[0145] The second scatterer SC2 and the second base resin BS2 may have different refractive indices and form an optical interface. For example, the second scatterer SC2 may be light scattering particles. The description of the second scatterer SC2 is substantially the same or similar to the description of the first scatterer SC1, and the same description will be omitted.

[0146] The first insulating layer 410 may be disposed or provided on the wavelength conversion portion (eg, see Figure 4 The first insulating layer 410 may cover each of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2, and may be formed (eg, integrally formed) in the display area DA including the first emission area EA1, the second emission area EA2, and the third emission area EA3.

[0147] In an embodiment, the first insulating layer 410 may be a protective wavelength conversion portion (eg, see Figure 4 The first insulating layer 410 may include a capping layer of a WCP and may include an inorganic material. For example, the first insulating layer 410 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc. or a combination thereof.

[0148] In an embodiment, the first insulating layer 410 may define a first space SPA1 in which each of the first wavelength conversion patterns WCP1 is formed. The first insulating layer 410 may define a second space SPA2 in which each of the second wavelength conversion patterns WCP2 is formed.

[0149] The first insulating layer 410 may open between the first and second emission regions EA1 and EA2 to expose a portion of the first wavelength conversion pattern WCP1. Similarly, the first insulating layer 410 may open between the first and third emission regions EA1 and EA3 to expose a portion of the second wavelength conversion pattern WCP2.

[0150] In an embodiment, the first insulating layer 410 may be opened adjacent to the first emission region EA1 in the first direction DR1 among the portions thereof covering each of the first wavelength conversion patterns WCP1, and may expose a portion of the first wavelength conversion pattern WCP1. For example, the first insulating layer 410 may be opened toward at least one adjacent first emission region EA1 at at least one end thereof in the first direction DR1 among the portions thereof covering each of the first wavelength conversion patterns WCP1, and may expose a portion of the first wavelength conversion pattern WCP1.

[0151] For example, at one of the second emission regions EA2 arranged in the middle of the row in the display area DA, the first insulating layer 410 may be opened at both ends thereof in the first direction DR1 toward two first emission regions EA1 disposed adjacent to the second emission region EA2 in a portion thereof covering the first wavelength conversion pattern WCP1 in the second emission region EA2, and both ends of the first wavelength conversion pattern WCP1 may be exposed. Both exposed ends of the first wavelength conversion pattern WCP1 may be covered by the light blocking member BM.

[0152] In an embodiment, the first insulating layer 410 may be opened adjacent to the first emission region EA1 in the first direction DR1 among the portions thereof covering each of the second wavelength conversion patterns WCP2, and may expose a portion of the second wavelength conversion pattern WCP2. For example, the first insulating layer 410 may be opened toward at least one adjacent first emission region EA1 at at least one end thereof in the first direction DR1 among the portions thereof covering each of the second wavelength conversion patterns WCP2, and may expose a portion of the second wavelength conversion pattern WCP2.

[0153] For example, at one of the third emission regions EA3 arranged in the middle of the row in the display area DA, the first insulating layer 410 may be opened at both ends in the first direction DR1 in a portion thereof covering the second wavelength conversion pattern WCP2 in the third emission region EA3 toward two first emission regions EA1 disposed adjacent to the third emission region EA3, and both ends of the second wavelength conversion pattern WCP2 may be exposed. Both exposed ends of the second wavelength conversion pattern WCP2 may be covered by the light blocking member BM.

[0154] The color filter portion CF may include a first color filter CF1 disposed or provided in each of the first emission areas EA1, a second color filter CF2 disposed or provided in each of the second emission areas EA2, and a third color filter CF3 disposed or provided in each of the third emission areas EA3.

[0155] The first color filter CF1 may be disposed on each of the first light emitting elements ED1. For example, the first color filter CF1 may be disposed or provided on the first insulating layer 410 and the second insulating layer 420 to overlap with the first light emitting element ED1 in a plan view. The first color filter CF1 may transmit light of a first color (e.g., blue light) emitted from the first light emitting element ED1, and may block or absorb light of other colors (e.g., red light and green light). For example, the first color filter CF1 may be a blue color filter and may include a blue colorant (such as a blue dye, a blue pigment, etc.).

[0156] The second color filter CF2 may be disposed on each of the first wavelength conversion patterns WCP1. For example, the second color filter CF2 may be disposed or provided on the first insulating layer 410 to overlap each of the first wavelength conversion patterns WCP1 in a plan view. The second color filter CF2 may block or absorb the first color light (e.g., blue light). For example, the second color filter CF2 may be used as a blue light blocking filter that blocks blue light. In an embodiment, the second color filter CF2 may transmit the light of the second color (e.g., red light) and block or absorb the light of the first color (e.g., blue light) and the light of the third color (e.g., green light). For example, the second color filter CF2 may be a red color filter and may include a red colorant.

[0157] The third color filter CF3 may be disposed on each of the second wavelength conversion patterns WCP2. For example, the third color filter CF3 may be disposed or provided on the first insulating layer 410 to overlap each of the second wavelength conversion patterns WCP2 in a plan view. The third color filter CF3 may block or absorb light of a first color (e.g., blue light). For example, the third color filter CF3 may also be used as a blue light blocking filter. In an embodiment, the third color filter CF3 may selectively transmit light of a third color (e.g., green light) and block or absorb light of a first color (e.g., blue light) and light of a second color (e.g., red light). For example, the third color filter CF3 may be a green color filter and may include a green colorant.

[0158] In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be disposed on different layers. For example, in the case where the light conversion portion 400 is formed or disposed (e.g., directly formed or disposed) on the base member 100 on which the light emitting element portion 300 is disposed, the wavelength conversion portion (e.g., see Figure 4 The WCP) may not be provided between the first color filter CF1 and the light emitting element portion 300, and the wavelength conversion portion (eg, see Figure 4WCP) can be arranged between the second color filter CF2 and the light emitting element part 300 and between the third color filter CF3 and the light emitting element part 300, so that the first color filter CF1 can be arranged closer to the light emitting element part 300 than the second color filter CF2 and the third color filter CF3.

[0159] The second insulating layer 420 may be disposed or provided on the second color filter CF2 and the third color filter CF3. In an embodiment, the first color filter CF1 may be disposed or provided on the second insulating layer 420, and may be formed after forming the light blocking member BM. For example, the light blocking member BM and the first color filter CF1 may be formed sequentially or continuously, and the first color filter CF1 may contact (e.g., directly contact) the side surface of the light blocking member BM.

[0160] The second insulating layer 420 may cover the second and third color filters CF2 and CF3. In an implementation, the second insulating layer 420 may be disposed or provided (eg, entirely disposed or provided) in the display area DA including the first, second, and third emission areas EA1, EA2, and EA3.

[0161] In an embodiment, the second insulating layer 420 may be a capping layer for protecting the second color filter CF2 and the third color filter CF3, and may include an inorganic material. For example, the second insulating layer 420 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc., or a combination thereof.

[0162] In an implementation, the second insulating layer 420 may be opened at a portion disposed adjacent to the first emission area EA1 together with the first insulating layer 410. Thus, the second insulating layer 420 may expose a portion of each of the first and second wavelength conversion patterns WCP1 and WCP2.

[0163] For example, the second insulating layer 420 may be opened on or around each of the first wavelength conversion patterns WCP1 toward at least one adjacent first emission area EA1 (e.g., two first emission areas EA1 disposed adjacent to each of the first wavelength conversion patterns WCP1 in the first direction DR1), and may expose a portion of the first wavelength conversion pattern WCP1 (e.g., a portion corresponding to both ends of the first wavelength conversion pattern WCP1 with respect to the first direction DR1). The exposed portion of the first wavelength conversion pattern WCP1 may be covered by the light blocking member BM.

[0164] Similarly, the second insulating layer 420 may be opened on or around each of the second wavelength conversion patterns WCP2 toward at least one adjacent first emission region EA1 (e.g., two first emission regions EA1 disposed adjacent to each of the second wavelength conversion patterns WCP2 in the first direction DR1), and may expose a portion of the second wavelength conversion pattern WCP2 (e.g., a portion corresponding to both ends of the second wavelength conversion pattern WCP2 with respect to the first direction DR1). The exposed portion of the second wavelength conversion pattern WCP2 may be covered by the light blocking member BM.

[0165] The light blocking member BM may be disposed in the non-emission area NEA and block the transmission of light. In an embodiment, the light blocking member BM may cover the exposed portions of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2. For example, the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 exposed at both ends in the first direction DR1 before forming the light blocking member BM may be covered by the light blocking member BM. In an embodiment, the light blocking member BM may be disposed or formed (e.g., directly disposed or formed) on the exposed portions of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2, and on a portion of the second insulating layer 420 disposed adjacent to the exposed portions of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2. The light blocking member BM may contact (e.g., directly contact) the exposed portions of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2.

[0166] The light blocking member BM may be disposed between the emission areas EA and around the emission area EA to surround the emission area EA, and may prevent color mixing between the emission areas EA. In an implementation, the light blocking member BM may include an organic light blocking material.

[0167] At least one insulating layer may be disposed or provided on the surface of the base member 100 on which the color filter portion CF and the light blocking member BM are formed. For example, the third insulating layer 430 may be formed (e.g., integrally formed) in the display area DA to cover the color filter portion CF and the light blocking member BM, and the fourth insulating layer 440 and the fifth insulating layer 450 may be sequentially formed on the third insulating layer 430. In an embodiment, the third insulating layer 430, the fourth insulating layer 440, and the fifth insulating layer 450 may be disposed or provided (e.g., integrally disposed or provided) in the display area DA including the first emission area EA1, the second emission area EA2, and the third emission area EA3. However, the number, type, stacking structure, etc. of the insulating layers covering the color filter portion CF and the light blocking member BM are not limited thereto.

[0168] The third insulating layer 430 may be disposed or provided on the base member 100 on which the color filter portion CF, the second insulating layer 420, the light blocking member BM, etc. are formed. In an embodiment, the third insulating layer 430 may be a capping layer for protecting the first color filter CF1, and may cover at least the first color filter CF1. In an embodiment, the third insulating layer 430 may include an inorganic material. For example, the third insulating layer 430 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc., or a combination thereof.

[0169] The fourth insulating layer 440 and the fifth insulating layer 450 may be disposed or provided on the third insulating layer 430. The fourth insulating layer 440 and the fifth insulating layer 450 may seal components disposed under the fourth insulating layer 440 and the fifth insulating layer 450. In an implementation, the fourth insulating layer 440 may include an organic material, and the fifth insulating layer 450 may include an inorganic material.

[0170] In an embodiment, a protective member (see, for example, Figure 3 The protective member 500 may be disposed on the light conversion portion 400. For example, the protective member 500 may be a protective film, an upper substrate, a window, etc., but the present disclosure is not limited thereto.

[0171] Figure 8 It is along Figure 4 Schematic cross-sectional view of the display device DD according to the embodiment, taken along line X1 - X1 ′. Fig. 9 It is along Figure 4 A schematic cross-sectional view of a display device DD according to an embodiment taken along line X2 - X2 ′.

[0172] and Figure 6 and Figure 7 Compared with the display device DD, Figure 8 and Fig. 9 The display device DD may further include a low refraction pattern LRP and a sixth insulating layer 460 . Figure 8 and Fig. 9 Description of other configurations and Figure 6 and Figure 7 The descriptions of the configurations are basically the same or similar, and the same descriptions will be omitted.

[0173] refer to Figure 8 and Fig. 9 (with reference Figures 1 to 7 ), the display device DD may further include a low refraction pattern LRP disposed in the light conversion portion 400 and a sixth insulating layer 460 covering the low refraction pattern LRP. In an implementation, the low refraction pattern LRP and the sixth insulating layer 460 may be sequentially disposed or provided on the first insulating layer 410.

[0174] In a plan view, the low refractive pattern LRP (or the low refractive layer) may be aligned with the wavelength conversion portion (eg, see Figure 4 The low refraction pattern LRP may overlap with the first wavelength conversion pattern WCP1 in a plan view and may be disposed in the second emission area EA2 and the third emission area EA3. For example, a low refraction pattern LRP overlapping with the first wavelength conversion pattern WCP1 in a plan view may be disposed or provided in each of the second emission areas EA2, and a low refraction pattern LRP overlapping with the second wavelength conversion pattern WCP2 in a plan view may be disposed or provided in each of the third emission areas EA3. In an embodiment, the low refraction pattern LRP disposed or provided in each of the second emission areas EA2 may be disposed or provided between the first wavelength conversion pattern WCP1 and the second color filter CF2, and the low refraction pattern LRP disposed or provided in each of the third emission areas EA3 may be disposed between the second wavelength conversion pattern WCP2 and the third color filter CF3. The position of the low refraction pattern LRP may be changed according to the embodiment in consideration of various factors such as light efficiency, process efficiency, etc.

[0175] In an embodiment, the low refraction pattern LRP may include a material having a lower refractive index than the wavelength conversion portion WCP (e.g., the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2). For example, the low refraction pattern LRP may include an organic layer including an organic material having a refractive index in the range of about 1.1 to about 1.4. Light loss traveling from the wavelength conversion portion WCP to the color filter portion CF (e.g., the second color filter CF2 and the third color filter CF3) may be reduced by the low refraction pattern LRP.

[0176] A sixth insulating layer 460 covering the low refraction pattern LRP may be disposed or provided on the low refraction pattern LRP. In an embodiment, the sixth insulating layer 460 may be disposed or provided (eg, integrally disposed or provided) in the display area DA including the first, second, and third emission areas EA1, EA2, and EA3.

[0177] In an embodiment, the sixth insulating layer 460 may be a capping layer for protecting a lower part such as the low refractive pattern LRP, and may include an inorganic material. For example, the sixth insulating layer 460 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc., or a combination thereof.

[0178] In an implementation, the sixth insulating layer 460 may be opened at a portion disposed adjacent to the first emission area EA1 together with the first and second insulating layers 410 and 420. Thus, the sixth insulating layer 460 may expose a portion of each of the first and second wavelength conversion patterns WCP1 and WCP2.

[0179] For example, the sixth insulating layer 460 may be opened on or around each of the first wavelength conversion patterns WCP1 toward at least one adjacent first emission region EA1 (e.g., two first emission regions EA1 disposed adjacent to each of the first wavelength conversion patterns WCP1 in the first direction DR1), and may expose a portion of the first wavelength conversion pattern WCP1 (e.g., a portion corresponding to both ends of the first wavelength conversion pattern WCP1 with respect to the first direction DR1). The exposed portion of the first wavelength conversion pattern WCP1 may be covered by the light blocking member BM.

[0180] Similarly, the sixth insulating layer 460 may be opened on or around each of the second wavelength conversion patterns WCP2 toward at least one adjacent first emission region EA1 (e.g., two first emission regions EA1 disposed adjacent to each of the second wavelength conversion patterns WCP2 in the first direction DR1), and may expose a portion of the second wavelength conversion pattern WCP2 (e.g., a portion corresponding to both ends of the second wavelength conversion pattern WCP2 with respect to the first direction DR1). The exposed portion of the second wavelength conversion pattern WCP2 may be covered by the light blocking member BM.

[0181] Fig.10 It is along Figure 4 Schematic cross-sectional view of the display device DD according to the embodiment, taken along line X1 - X1 ′. Fig.11 It is along Figure 4 Schematic cross-sectional view of the display device DD according to the embodiment, taken along line X1 - X1 ′. Fig.12 It is along Figure 4 Schematic cross-sectional view of the display device DD according to the embodiment, taken along line X1 - X1 ′.

[0182] and Figures 6 to 9 Compared with the display device DD, Fig.10 , Fig.11 and Fig.12 Each of the display devices DD may have a different structure. For example, Fig.10 , Fig.11 and Fig.12The display device DD may further include a protection member 500 , and may have a structure in which the light conversion part 400 is formed or provided (eg, directly formed or provided) on the protection member 500 and is bonded to the base member 100 to face the light emitting element part 300 . Fig.10 , Fig.11 and Fig.12 Each of the display devices DD may selectively further include a filler 600 .

[0183] refer to Fig.10 (with reference Figures 1 to 9 ), the display device DD may include a protective member 500 disposed on the base member 100 on which the light emitting element portion 300 is disposed, and a light conversion portion 400 disposed on a surface of the protective member 500 facing the light emitting element portion 300.

[0184] In an embodiment, the protection member 500 may be an upper substrate or a protection film, and may be a rigid or flexible substrate, film, etc. In an embodiment, the light conversion part 400 may be disposed or formed (e.g., directly disposed or formed) on a surface of the protection member 500 (e.g., a surface facing the light emitting element part 300). The protection member 500 may be a base member used as a substrate when forming the light conversion part 400.

[0185] The light conversion part 400 may include a color filter part CF, a second insulating layer 420, a wavelength conversion part (eg, see Figure 4 WCP) (see, for example, Fig.10 The first wavelength conversion pattern WCP1 and Fig. 9 The light conversion portion 400 may further include at least one of a third insulating layer 430, a fourth insulating layer 440, and a fifth insulating layer 450 sequentially disposed or formed on the surface of the protective member 500 on which the light blocking member BM is disposed. Fig.10 Only those components of the wavelength conversion portion WCP are shown. Figure 4 The line X1-X1' corresponds to the first wavelength conversion pattern WCP1 disposed or provided in the second emission area EA2, but the present disclosure is not limited thereto, and according to Fig.10 The display device DD of the embodiment may include a second wavelength conversion pattern WCP2 disposed or provided in the third emission area EA3.

[0186] The color filter portion CF may be disposed on a surface of the protective member 500 facing the light emitting element portion 300. As described above, the color filter portion CF may include a first color filter CF1 disposed or provided in the first emission area EA1, a second color filter CF2 disposed or provided in the second emission area EA2, and a third color filter CF3 disposed or provided in the third emission area EA3. In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be disposed or provided on substantially the same layer.

[0187] The second insulating layer 420 may be disposed on the surface of the protective member 500 on which the color filter portion CF is disposed to cover the color filter portion CF. For example, the second insulating layer 420 may be formed (e.g., entirely formed) in the display area DA to cover the first color filter CF1, the second color filter CF2, and the third color filter CF3.

[0188] The wavelength conversion portion WCP may be disposed on a surface of the protection member 500 on which the second insulating layer 420 is disposed, and may face the light emitting element portion 300. As described above, the wavelength conversion portion WCP may be disposed or provided in the second emission area EA2 and the third emission area EA3, but may not be disposed or provided in the first emission area EA1.

[0189] The first insulating layer 410 may be disposed on the surface of the protection member 500 on which the wavelength conversion portion WCP is disposed to cover the wavelength conversion portion WCP. In an embodiment, the first insulating layer 410 may be disposed or provided (e.g., disposed or provided entirely) in the display area DA. For example, the first insulating layer 410 may also be disposed or provided in the first emission area EA1. As described above, the first insulating layer 410 may expose a portion of each of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 (e.g., both ends in the first direction DR1).

[0190] The low refraction pattern LRP may be disposed on the surface of the first insulating layer 410 to overlap with the wavelength conversion portion WCP in a plan view. For example, the low refraction pattern LRP may be disposed between the light emitting element portion 300 and the wavelength conversion portion WCP. However, the position of the low refraction pattern LRP is not limited thereto.

[0191] The sixth insulating layer 460 may be disposed on the surface of the protective member 500 on which the low-refractive pattern LRP is disposed to cover the low-refractive pattern LRP. In an embodiment, the sixth insulating layer 460 may be disposed or provided (e.g., disposed or provided as a whole) in the display area DA. For example, the sixth insulating layer 460 may also be disposed or provided in the first emission area EA1. As described above, the sixth insulating layer 460 may expose a portion of each of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 (e.g., both ends in the first direction DR1).

[0192] The light blocking member BM may be disposed on a surface of the protective member 500 on which the color filter portion CF, the wavelength conversion portion WCP, the low refraction pattern LRP, etc. are disposed, and may be disposed in the non-emission area NEA. As described above, the light blocking member BM may cover an exposed portion of each of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2.

[0193] In an embodiment, the filler 600 may be disposed between the light emitting element part 300 and the light conversion part 400. For example, the filler 600 may fill a space between the base member 100 on which the light emitting element part 300 and the like are disposed and the protective member 500 on which the light conversion part 400 is disposed.

[0194] In an embodiment, the filler 600 may include a light-transmitting material. In an embodiment, the filler 600 may include an organic material. For example, the filler 600 may include a silicon-based organic material, an epoxy-based organic material, a mixture of a silicon-based organic material and an epoxy-based organic material, etc., but the present disclosure is not limited thereto. In another embodiment, the filler 600 may be omitted.

[0195] Figures 10 to 12 Description of other configurations and Figures 6 to 9 The descriptions of the configurations are basically the same or similar, and the same descriptions will be omitted.

[0196] refer to Fig.11 (with reference Fig.10 ), the display device DD may further include a light blocking pattern LBP disposed between adjacent color filters. The light blocking pattern LBP may be disposed in the non-emission area NEA and may overlap with the light blocking member BM in a plan view. The light blocking pattern LBP and the light blocking member BM may include the same light blocking material, or may include different light blocking materials. In another embodiment, in the case where the light blocking pattern LBP is not disposed in the non-emission area NEA, color mixing may be prevented by overlapping at least two color filters in a plan view.

[0197] Fig.11Description of other configurations and Fig.10 The configuration description is Fig.10 The descriptions are substantially the same or similar, and the same descriptions will be omitted.

[0198] refer to Fig.12 (with reference Fig.10 ),like Fig.10 As in the embodiment of the present invention, the display device DD in which the light conversion part 400 is disposed (e.g., directly disposed) on the surface of the protective member 500 and is bonded to the base member 100 on which the light emitting element part 300 and the like are disposed may not include the low refraction pattern LRP and the sixth insulating layer 460. For example, the low refraction pattern LRP and the sixth insulating layer 460 may be selectively disposed in the display device DD according to the embodiment.

[0199] The display device DD may include a protective member 500 disposed on the base member 100 on which the light emitting element portion 300 is disposed, and a light conversion portion 400 disposed on a surface of the protective member 500 facing the light emitting element portion 300 .

[0200] Fig.12 Description of other configurations and Fig.10 The descriptions of the configurations are basically the same or similar, and the same descriptions will be omitted.

[0201] Figures 13 to 22 is based on Figure 6 1 is a schematic cross-sectional view showing a method for manufacturing a display device DD according to an embodiment. Fig.23 is available for use according to the implementation Fig.15 and Fig.16 Schematic plan view of the mask MK in the manufacturing steps. Fig.24 is with Fig.23 The line X3-X3' corresponds to Fig.15 and Fig.16 Schematic cross-sectional view of a display device DD in a manufacturing step.

[0202] refer to Figures 13 to 24 (with reference Figures 1 to 7 ),like Fig.13 As shown, the base member 100 may be prepared, and the panel circuit part 200 may be formed (eg, selectively formed) on the base member 100. Furthermore, the light emitting element part 300 may be formed on the base member 100 on which the panel circuit part 200 is formed.

[0203] As described above, an emission area EA including a first emission area EA1, a second emission area EA2, and a third emission area EA3 and a non-emission area NEA may be defined on the base member 100. For example, the base member 100 may include a first emission area EA1, a second emission area EA2, and a non-emission area NEA. The first emission area EA1 may be an emission area of ​​a first color pixel, and the second emission area EA2 may be an emission area of ​​a second color pixel. The third emission area EA3 may be an emission area of ​​a third color pixel. Each pixel PX may include at least one emission area EA that emits light corresponding to each color (e.g., a base color or a selectable color). For example, each pixel PX may include a first emission area EA1, a second emission area EA2, or a third emission area EA3. The circuit elements of the panel circuit portion 200 and the light emitting elements ED of the light emitting element portion 300 may be formed on the base member 100 according to a position (e.g., a predetermined or selectable position).

[0204] After forming the circuit elements and the light emitting element ED, a sacrificial pattern SP (or sacrificial layer) may be formed on the base member 100 on which the light emitting element part 300 etc. is formed. A first insulating layer 410 may be formed on the base member 100 on which the sacrificial pattern SP is formed.

[0205] The sacrificial pattern SP may be formed in the second emission area EA2 and the third emission area EA3, and may not be formed in the first emission area EA1. In an embodiment, the sacrificial pattern SP may be formed to have a width greater than a width of each of the second emission area EA2 and the third emission area EA3, so that both ends of the sacrificial pattern SP are disposed in the non-emission area NEA in the first direction DR1. In an embodiment, the sacrificial pattern SP may be formed by applying a photosensitive organic material and exposing and developing the photosensitive organic material. In an embodiment, the sacrificial pattern SP may have a thickness in a range of about 1 μm to about 20 μm, but the present disclosure is not limited thereto.

[0206] The first insulating layer 410 may be formed on the base member 100 on which the sacrificial pattern SP is formed. In an embodiment, the first insulating layer 410 may be formed in a region (e.g., the entire region) of the display area DA including the first emission area EA1, the second emission area EA2, and the third emission area EA3. In an embodiment, the first insulating layer 410 may include an inorganic insulating material and may be formed by a plasma enhanced chemical vapor deposition (PECVD) process, etc. In an embodiment, the first insulating layer 410 may have a thickness of about to about The thickness is within the range of , but the present disclosure is not limited thereto.

[0207] like Fig.14 As shown, a second color filter CF2 may be formed in the second emission area EA2 on the first insulating layer 410. Fig.14 Although not shown in the drawings, a third color filter CF3 may be formed in the third emission area EA3 on the first insulating layer 410. The second color filter CF2 and the third color filter CF3 may be formed to overlap the sacrificial pattern SP in a plan view. In an embodiment, the second color filter CF2 and the third color filter CF3 may be formed to have a width smaller than that of the sacrificial pattern SP in the first direction DR1 and be disposed at the center of the sacrificial pattern SP. For example, the second color filter CF2 and the third color filter CF3 may not be disposed on both ends of the sacrificial pattern SP in the first direction DR1.

[0208] After forming the second color filter CF2 and the third color filter CF3, a second insulating layer 420 may be formed on the base member 100 on which the second color filter CF2 and the third color filter CF3 are formed. In an embodiment, the second insulating layer 420 may be formed in a region (e.g., the entire region) of the display area DA including the first emission area EA1, the second emission area EA2, and the third emission area EA3. In an embodiment, the second insulating layer 420 may include an inorganic insulating material and may be formed by a plasma enhanced chemical vapor deposition (PECVD) process, etc. In an embodiment, the second insulating layer 420 may have a thickness of about 100 mm / s. to about The thickness is within the range of , but the present disclosure is not limited thereto.

[0209] like Fig.15 As shown, a mask MK may be disposed on the second insulating layer 420. In an embodiment, as shown in FIG. Fig.15 , Fig.23 and Fig.24 As shown, the mask MK may be formed to cover the emission area EA, and the mask MK may be formed to expose a portion of the non-emission area NEA between the first emission area EA1 and the second emission area EA2 disposed adjacent to each other in the first direction DR1 and between the first emission area EA1 and the third emission area EA3 disposed adjacent to each other in the first direction DR1. For example, the mask MK may be opened so that it is not disposed at both ends of the sacrificial pattern SP (at a portion disposed adjacent to the first emission area EA1 in the first direction DR1). In an embodiment, the mask MK may be opened in a strip shape in the second direction DR2 at a boundary between adjacent pixel rows. For example, the mask MK may be opened in a slit shape extending in the second direction DR2 between adjacent pixel rows. In an embodiment, the mask MK may be formed using a photosensitive organic material. Fig.23 against Figure 4The display area DA of FIG. 1 schematically shows the positions of the sacrificial pattern SP and the mask MK to explain the position of the mask MK according to the embodiment.

[0210] In an embodiment, Fig.15 , Fig.23 and Fig.24 The positions of the sacrificial pattern SP and the mask MK are shown, but the present disclosure is not limited thereto. In another embodiment, the position of the sacrificial pattern SP may be changed corresponding to the position where the wavelength conversion portion WCP will be formed. In another embodiment, the position of the mask MK may be changed according to the supply point or inflow direction of the material used to form the wavelength conversion portion WCP. In another embodiment, when the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 are formed in the second emission area EA2 and the third emission area EA3, respectively, the material for forming the wavelength conversion portion WCP may be provided to the second emission area EA2 and the third emission area EA3 through the adjacent first emission area EA1 in each pixel row. The shape, position and / or arrangement direction of the mask MK or the position where the sacrificial pattern SP is exposed may be changed according to the opening position of the first insulating layer 410, etc.

[0211] like Fig.16 As shown, a portion of the sacrificial pattern SP may be exposed by removing the first insulating layer 410 and the second insulating layer 420 from the non-emission area NEA disposed adjacent to the first emission area EA1 using a mask MK. For example, both ends of each of the sacrificial patterns SP may be exposed by removing the first insulating layer 410 and the second insulating layer 420 in the non-emission area NEA between the first emission area EA1 and the second emission area EA2 disposed adjacent to each other in the first direction DR1 and between the first emission area EA1 and the third emission area EA3 disposed adjacent to each other in the first direction DR1 through an etching (e.g., dry etching) process or the like.

[0212] like Fig.17 As shown, by removing the sacrificial pattern SP and the mask MK, a cavity CVT corresponding to the sacrificial pattern SP can be formed. In an embodiment, the sacrificial pattern SP and the mask MK can be removed by providing a material such as a developer, a stripper solution, etc. or by an ashing process, etc. For example, the sacrificial pattern SP and the mask MK can be removed by a stripping process, and the cavity CVT corresponding to the sacrificial pattern SP can be easily formed by forming a sacrificial pattern SP having a material and / or size suitable for being easily removed by a stripper solution. In an embodiment, each cavity CVT can be formed as a space having a tunnel structure, and the tunnel structure is open toward at least one first emission area EA1 adjacent in the first direction DR1 (for example, the first emission areas EA1 arranged on both sides of the cavity CVT in the first direction DR1).

[0213] like Fig.18 As shown, by performing surface treatment on the second insulating layer 420, liquid repellency can be imparted to the emission area EA. For example, hydrogen (H 2 ) Plasma treatment makes the surface of the second insulating layer 420 hydrophobic.

[0214] After imparting liquid repellency, e.g. Fig.19 and Fig. 20 As shown, by providing a material for forming a wavelength conversion portion WCP to the first emission region EA1, a wavelength conversion portion WCP may be formed in the second emission region EA2 and the third emission region EA3.

[0215] For example, Fig.19 As shown, the ink IK including the first wavelength converter WS1 (for example, the ink IK in which the first wavelength converter WS1 and the first scatterer SC1 are dispersed in the first base resin BS1) can be discharged to the pixel column (for example, see FIG. 1 ) in which the first emission area EA1 and the second emission area EA2 are provided by using the nozzle NZ or the like. Figure 4 and Figure 5 The ink IK can be introduced into the cavity CVT corresponding to the surrounding second emission area EA2 by capillary action, thereby filling the cavity CVT. Fig. 20 As shown, a first wavelength conversion pattern WCP1 may be formed in the second emission area EA2.

[0216] In addition, in substantially the same manner as described above, the ink IK including the second wavelength converter WS2 (e.g., the ink IK in which the second wavelength converter WS2 and the second scatterer SC2 are dispersed in the second base resin BS2) may be discharged to the pixel columns in which the first emission area EA1 and the third emission area EA3 are provided (e.g., see Figure 4 and Figure 5 The ink IK may be introduced into the cavity corresponding to the surrounding third emission area EA3 by capillary action, thereby filling the cavity. As a result, a second wavelength conversion pattern WCP2 may be formed in the third emission area EA3.

[0217] In an embodiment, since the surface of the emission area EA (e.g., the surface of the second insulating layer 420) is surface-treated to be liquid-repellent or hydrophobic, the ink IK can easily flow into the cavity CVT through the opening portion of the cavity CVT (e.g., the portion where the first insulating layer 410 and the second insulating layer 420 have been removed). Since the surface of the emission area EA is surface-treated to be liquid-repellent or hydrophobic, the ink IK can easily flow into the cavity CVT even if the ink IK accidentally falls on the surrounding second emission area EA2 or third emission area EA3. In an embodiment, the amount of ink IK provided to each of the first emission areas EA1 can be appropriately adjusted in consideration of the size of the cavity CVT. For example, taking into account the error range, the ink IK can be provided to each first emission area EA1 in an amount sufficient to fill the surrounding cavity CVT.

[0218] As described above, in the case of using the first emission area EA1 as an inkjet droplet area (for example, an area to which the ink IK including the first wavelength converter WS1 or the second wavelength converter WS2 is provided by an inkjet method), even in a display device DD having a high resolution in which the size of the pixel PX is reduced and the pixels PX are densely arranged, a sufficient area and / or width of the inkjet droplet area can be ensured. In addition, the inkjet process can be performed before forming the light blocking member BM, and not only each first emission area EA1 but also a portion of the non-emission area NEA disposed near the first emission area EA1 can be used as an inkjet droplet area. For example, in addition to each first emission area EA1, a portion of the non-emission area NEA disposed between the cavity portions CVT on both sides of the first emission area EA1 in the first direction DR1 can also be used as an inkjet droplet area for providing the ink IK to the second emission area EA2 or the third emission area EA3 disposed adjacent to the first emission area EA1.

[0219] After the inkjet process, Fig.21 As shown, a light blocking member BM may be formed in the non-emission area NEA. The light blocking member BM may be formed to cover the exposed surfaces of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 (which are exposed in the portions where the first insulating layer 410 and the second insulating layer 420 have been removed). The light blocking member BM may allow the emission area EA of the pixel PX and the non-emission area NEA adjacent to the emission area EA to be more clearly distinguished.

[0220] like Fig. 22As shown, a first color filter CF1 may be formed in each first emission area EA1. Even if residues of the ink IK remain in the first emission area EA1, the first color filter CF1 may prevent light having a color other than the first color (e.g., red light or green light) from being emitted from the first emission area EA1. In an embodiment, the first color filter CF1 may be formed on the second insulating layer 420 in the first emission area EA1 and may contact (e.g., directly contact) the side surface of the light blocking member BM.

[0221] After forming the first color filter CF1, a third insulating layer 430 may be formed on the base member 100 on which the light blocking member BM, the first color filter CF1, etc. are formed. In an embodiment, the third insulating layer 430 may be formed in a region (e.g., the entire region) of the display area DA including the first emission area EA1, the second emission area EA2, and the third emission area EA3. In an embodiment, the third insulating layer 430 may include an inorganic insulating material and may be formed by a plasma enhanced chemical vapor deposition (PECVD) process, etc. In an embodiment, the third insulating layer 430 may have a thickness of about 100 to about 1000. to about In an embodiment, the process of forming the third insulating layer 430 may be omitted.

[0222] After forming the third insulating layer 430, the Figure 6 and Figure 7 The display device DD is manufactured by using the fourth insulating layer 440 , the fifth insulating layer 450 , etc. as shown.

[0223] Figures 25 to 32 is based on Figure 8 A schematic cross-sectional view of a method for manufacturing a display device DD according to an embodiment is shown. Figures 25 to 32 In the method for manufacturing a display device DD according to an embodiment, Figures 25 to 32 Description of the components and Figures 13 to 24 The descriptions of the components are substantially the same or similar, and the same descriptions will be omitted.

[0224] refer to Figures 25 to 32 (with reference Figures 1 to 5 , Figure 8 and Fig. 9 ),like Fig.25As shown, a base member 100 in which an emission area EA and a non-emission area NEA are defined may be provided, and a panel circuit portion 200, a light emitting element portion 300, a sacrificial pattern SP (or a sacrificial layer), and a first insulating layer 410 may be sequentially formed on the base member 100. After forming the panel circuit portion 200, the light emitting element portion 300, the sacrificial pattern SP, and the first insulating layer 410, a low refractive pattern LRP and a sixth insulating layer 460 may be sequentially formed on the first insulating layer 410.

[0225] In an embodiment, the low refraction pattern LRP may be formed in the second emission area EA2 and the third emission area EA3, and may not be formed in the first emission area EA1. In an embodiment, the low refraction pattern LRP may be formed to have a width smaller than that of the sacrificial pattern SP in the first direction DR1 and be disposed at the center of the sacrificial pattern SP. For example, the low refraction pattern LRP may not be disposed at both ends of the sacrificial pattern SP in the first direction DR1.

[0226] In an embodiment, the sixth insulating layer 460 may be formed in a region (e.g., the entire region) of the display area DA including the first emission region EA1, the second emission region EA2, and the third emission region EA3. In an embodiment, the sixth insulating layer 460 may include an inorganic insulating material and may be formed by a plasma enhanced chemical vapor deposition (PECVD) process, etc. In an embodiment, the sixth insulating layer 460 may have a thickness of about 1000 Å. to about The thickness is within the range of , but the present disclosure is not limited thereto.

[0227] like Fig.26 As shown, a second color filter CF2 may be formed in the second emission area EA2 on the sixth insulating layer 460. Fig.26 Although not shown in the figure, a third color filter CF3 may be formed in the third emission area EA3 on the sixth insulating layer 460. The second color filter CF2 and the third color filter CF3 may be formed to overlap with the low refraction pattern LRP and the sacrificial pattern SP in a plan view. In an embodiment, the second color filter CF2 and the third color filter CF3 may be formed to have a width smaller than that of the sacrificial pattern SP in the first direction DR1, while being disposed at the center of the sacrificial pattern SP, and may not be disposed on both ends of the sacrificial pattern SP. After forming the second color filter CF2 and the third color filter CF3, a second insulating layer 420 may be formed on the base member 100 on which the second color filter CF2 and the third color filter CF3 are formed.

[0228] like Fig. 27As shown, a mask MK may be disposed on the second insulating layer 420. In an embodiment, the mask MK may be formed to cover the emission area EA, and may be formed to expose a portion of the non-emission area NEA between the first emission area EA1 and the second emission area EA2 disposed adjacent to each other in the first direction DR1 and between the first emission area EA1 and the third emission area EA3 disposed adjacent to each other in the first direction DR1. For example, the mask MK may be opened so that it is not disposed at both ends of the sacrificial pattern SP at a portion disposed adjacent to the first emission area EA1 in the first direction DR1.

[0229] After exposing a portion of the non-emission area NEA, a portion of the sacrificial pattern SP may be exposed by removing the first insulating layer 410, the second insulating layer 420, and the sixth insulating layer 460 in the non-emission area NEA disposed adjacent to the first emission area EA1. For example, by partially removing the first insulating layer 410, the second insulating layer 420, and the sixth insulating layer 460 through an etching process using a mask MK, both ends of each of the sacrificial patterns SP may be exposed.

[0230] like Fig.28 As shown, by removing the sacrificial pattern SP and the mask MK, the cavity portions CVT each corresponding to the sacrificial pattern SP may be formed. Subsequently, by surface-treating the second insulating layer 420, liquid repellency or hydrophobicity may be imparted to the emission area EA.

[0231] like Fig.29 and Fig.30 As shown, by providing a material for forming a wavelength conversion portion WCP to the first emission area EA1, a wavelength conversion portion WCP may be formed in the second emission area EA2 and the third emission area EA3. In an embodiment, a material for forming a first wavelength conversion pattern WCP1 may be provided to the first emission area EA1 of a pixel column in which the second emission area EA2 is arranged, and a material for forming a second wavelength conversion pattern WCP2 may be provided to the first emission area EA1 of a pixel column in which the third emission area EA3 is arranged.

[0232] For example, Fig.29 As shown, the ink IK including the first wavelength converter WS1 or the second wavelength converter WS2 can be discharged to each of the first emission areas EA1 by an inkjet method using a nozzle NZ. The ink IK can be introduced into the cavity CVT corresponding to the second emission area EA2 or the third emission area EA3 by capillary action, thereby filling the cavity CVT. Therefore, the first wavelength conversion pattern WCP1 can be formed in the second emission area EA2, and the second wavelength conversion pattern WCP2 can be formed in the third emission area EA3. Although Fig.30The third emission area EA3 is not shown, but the second wavelength conversion pattern WCP2 may be formed in the third emission area EA3, and the second wavelength conversion pattern WCP2 formed in the third emission area EA3 and the first wavelength conversion pattern WCP1 formed in the second emission area EA2 may have substantially the same structure and / or method.

[0233] like Fig.31 As shown, a light blocking member BM may be formed in the non-emission area NEA. The light blocking member BM may be formed to cover exposed surfaces of the first and second wavelength conversion patterns WCP1 and WCP2 (which are exposed in portions where the first, second, and sixth insulating layers 410, 420, and 460 have been removed).

[0234] like Fig.32 As shown, a first color filter CF1 may be formed in each of the first emission regions EA1. In an embodiment, the first color filter CF1 may be formed on the second insulating layer 420 in the first emission region EA1 and may contact (e.g., directly contact) the side surface of the light blocking member BM. After forming the first color filter CF1, a third insulating layer 430 may be selectively formed on the base member 100 on which the light blocking member BM, the first color filter CF1, etc. are formed.

[0235] After forming the third insulating layer 430, the Figure 8 and Fig. 9 The display device DD is manufactured by using the fourth insulating layer 440 and the fifth insulating layer 450 as shown.

[0236] Figures 33 to 41 is based on Fig.10 A schematic cross-sectional view of a method for manufacturing a display device DD according to an embodiment is shown. Figures 33 to 41 In the method for manufacturing a display device DD according to an embodiment, Figures 33 to 41 Description of the components and Figures 13 to 24 and / or Figures 25 to 32 The descriptions of the components are substantially the same or similar, and the same descriptions will be omitted.

[0237] refer to Figures 33 to 41 (with reference Figures 1 to 5 and Fig.10 ),like Fig.33As shown, a protective member 500 corresponding to the emission area EA (or light transmission area) and the non-emission area NEA (or light blocking area) may be prepared, and a color filter portion CF and a second insulating layer 420 may be formed on the protective member 500. For example, a first color filter CF1 may be formed in the first emission area EA1, and a second color filter CF2 may be formed in the second emission area EA2. Fig.33 Although not shown, a third color filter CF3 may be formed in the third emission area EA3. The second insulating layer 420 may cover the first, second, and third color filters CF1, CF2, and CF3, and may be formed in a region (eg, the entire region) of the display area DA.

[0238] After forming the color filter portion CF and the second insulating layer 420, as shown in FIG. Fig.34 As shown, a sacrificial pattern SP (or sacrificial layer) and a first insulating layer 410 may be sequentially formed on the second insulating layer 420. The sacrificial pattern SP may be formed in the second emission area EA2 and the third emission area EA3, and may not be formed in the first emission area EA1. In an embodiment, the sacrificial pattern SP may be formed such that both ends of the sacrificial pattern SP in the first direction DR1 are disposed in the non-emission area NEA.

[0239] like Fig.35 As shown, a low refraction pattern LRP and a sixth insulating layer 460 may be sequentially formed on the first insulating layer 410. In an embodiment, the low refraction pattern LRP may be formed in the second emission area EA2 and the third emission area EA3, and may not be formed in the first emission area EA1. In an embodiment, the low refraction pattern LRP may be formed to have a width smaller than that of the sacrificial pattern SP in the first direction DR1, and be disposed at the center of the sacrificial pattern SP.

[0240] In an embodiment, in manufacturing according to Fig.12 In the case of the display device DD according to the embodiment of the present invention, the steps of forming the low refraction pattern LRP and the sixth insulating layer 460 may be omitted.

[0241] like Fig.36 As shown, a mask MK may be disposed on the sixth insulating layer 460. In an embodiment, the mask MK may be formed to cover the emission area EA, and may be opened and not disposed on both ends of the sacrificial pattern SP at portions disposed adjacent to the first emission area EA1 in the first direction DR1.

[0242] After disposing the mask MK, the first and sixth insulating layers 410 and 460 may be removed from the non-emission area NEA disposed adjacent to the first emission area EA1 through an etching process using the mask MK. Thus, portions of the sacrificial pattern SP (eg, both ends of the sacrificial pattern SP in the first direction DR1) may be exposed.

[0243] Then, if Fig.37 As shown, by removing the sacrificial pattern SP and the mask MK, cavities CVT each corresponding to the sacrificial pattern SP can be formed. After forming the cavity CVT, by surface-treating the second insulating layer 420, liquid repellency or hydrophobicity can be imparted to the emission area EA (eg, the surface of the sixth insulating layer 460).

[0244] like Fig.38 and Fig.39 As shown, by providing a material for forming a wavelength conversion portion WCP to the first emission area EA1, a wavelength conversion portion WCP may be formed in the second emission area EA2 and the third emission area EA3. Fig.38 As shown, the ink IK including the first wavelength converter WS1 or the second wavelength converter WS2 can be discharged to each of the first emission areas EA1 by an inkjet method using a nozzle NZ. The ink IK can be introduced into the cavity CVT corresponding to the second emission area EA2 or the third emission area EA3 by capillary action, thereby filling the cavity CVT. Therefore, the first wavelength conversion pattern WCP1 can be formed in the second emission area EA2, and the second wavelength conversion pattern WCP2 can be formed in the third emission area EA3. Although Fig.38 and Fig.39 The third emission area EA3 is not shown, but the second wavelength conversion pattern WCP2 may be formed in the third emission area EA3, and the second wavelength conversion pattern WCP2 formed in the third emission area EA3 and the first wavelength conversion pattern WCP1 formed in the second emission area EA2 may have substantially the same structure and / or method.

[0245] like Fig.40 As shown, a light blocking member BM may be formed in the non-emission area NEA. The light blocking member BM may be formed to cover exposed surfaces of the first and second wavelength conversion patterns WCP1 and WCP2 (which are exposed in portions where the first and sixth insulation layers 410 and 460 have been removed).

[0246] After forming the light blocking member BM, the third insulating layer 430 may be formed, and after forming the third insulating layer 430, a further insulating layer may be selectively formed or disposed. Fig.10 A fourth insulating layer 440 and a fifth insulating layer 450 are shown.

[0247] like Fig.41 As shown, the protective member 500 on which the light conversion part 400 is disposed may be disposed on top of the base member 100 on which the panel circuit part 200, the light emitting element part 300, etc. are disposed. After the protective member 500 is disposed, the display device DD may be manufactured through a bonding process using a sealing material (not shown), a filler 600, etc.

[0248] According to various embodiments described above, the first emission area EA1 not including a wavelength conversion pattern may be used as an inkjet dropping area to form first and second wavelength conversion patterns WCP1 and WCP2 in the second and third emission areas EA2 and EA3 , respectively.

[0249] For example, in the above description, at least one first emission area EA1 may be disposed adjacent to each of the second emission area EA2 and the third emission area EA3. Cavity portions CVT for forming the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 may be formed in the second emission area EA2 and the third emission area EA3, respectively, by using sacrificial patterns SP.

[0250] In an embodiment, the cavity CVT may be formed as a space having a tunnel structure that opens toward at least one first emission area EA1 disposed adjacent to (e.g., directly disposed to) each of the second emission area EA2 and the third emission area EA3. In an embodiment, before forming the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2, a surface of the base member 100 on which the cavity CVT is disposed may be surface-treated so that liquid repellency or hydrophobicity may be imparted to the surface of the remaining area except the interior of the cavity CVT (e.g., the exposed surface of the emission area EA).

[0251] After forming the cavity CVT, in the case where the ink IK including the first wavelength converter WS1 or the second wavelength converter WS2 is provided to each first emission area EA1, the ink IK may be introduced into the cavity CVT of the adjacent second emission area EA2 or the third emission area EA3 to fill the cavity CVT. As a result, a first wavelength conversion pattern WCP1 may be formed in each second emission area EA2, and a second wavelength conversion pattern WCP2 may be formed in each third emission area EA3.

[0252] According to the above description, by using the first emission area EA1 and the surrounding non-emission area NEA as the inkjet drop area for forming the wavelength conversion portion WCP in the second emission area EA2 and the third emission area EA3, a sufficient area and / or width of the inkjet drop area can be ensured. For example, even in a display device DD with a high resolution of about 160ppi or more (for example, a display device with a high resolution of about 220ppi, where the width W1 of the unit pixel UPA in the first direction DR1 and / or the width W2 of the unit pixel UPA in the second direction DR2 is less than or equal to about 120μm) where the area of ​​the unit pixel UPA is reduced and the pixels PX are densely arranged, the minimum inkjet drop area required for the inkjet process can be ensured. Therefore, a high-resolution display device DD including a wavelength conversion pattern can be manufactured by an inkjet process.

[0253] According to the above description, the size of each of the first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 can be finely adjusted by adjusting the size of the sacrificial pattern SP (e.g., the area and / or height of the sacrificial pattern SP). Therefore, the ink IK can be used effectively or economically, so that the manufacturing cost of the display device DD can be reduced. The first wavelength conversion pattern WCP1 and the second wavelength conversion pattern WCP2 can be uniformly formed, so that the brightness deviation between the pixels PX can be reduced or minimized, and the quality of the display device DD can be improved.

[0254] According to an embodiment in which the light conversion portion 400 is formed (e.g., directly formed) on the surface of the base member 100 on which the light emitting element portion 300 and the like are formed, the manufacturing process of the display device DD can be continuously and / or continuously performed without turning the manufactured object upside down during the manufacturing process of the display device DD. Therefore, the risk of damage that may occur in the manufacturing process of the display device DD can be reduced or prevented, and the display device DD can be stably manufactured.

[0255] The above description is an example of the technical features of the present disclosure, and those skilled in the art to which the present disclosure belongs will be able to make various modifications and changes.Therefore, the embodiments of the present disclosure described above can be implemented separately or in combination with each other.

[0256] Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical spirit of the present disclosure, but are intended to describe the technical spirit of the present disclosure, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. The protection scope of the present disclosure should be interpreted by the attached claims, and should be interpreted as all technical spirits within the equivalent scope are included in the scope of the present disclosure.

Claims

1. A display device, characterized in that include: a first emission region, a second emission region and a non-emission region, wherein the second emission region is arranged adjacent to the first emission region, and the non-emission region is arranged between the first emission region and the second emission region; Basic components; The light emitting element part is arranged on the base member and comprises: A first light emitting element is disposed in the first emission area; and A second light emitting element is disposed in the second emission area; a wavelength conversion portion disposed on the light emitting element portion and including a first wavelength conversion pattern disposed in the second emission region; a first insulating layer covering the first wavelength conversion pattern, opening at a portion adjacent to the first emission region, and exposing a portion of the first wavelength conversion pattern; and a light blocking member disposed in the non-emission region and covering the portion of the first wavelength conversion pattern, Wherein, the wavelength conversion portion is only arranged in the second emission area between the first emission area and the second emission area.

2. The display device according to claim 1, characterized in that Also includes: a first color filter disposed on the first light emitting element in the first emission region; as well as A second color filter is disposed on the first wavelength conversion pattern in the second emission area.

3. The display device according to claim 2, characterized in that: The second light emitting element is a first color light emitting element that emits light of a first color, The first wavelength conversion pattern includes a first wavelength converter that converts light of the first color into light of a second color, and The second color filter is a color filter of the second color, which transmits light of the second color.

4. The display device according to claim 2, characterized in that: The first light emitting element is a first color light emitting element that emits light of a first color, and The first color filter includes a color filter of the first color that transmits light of the first color.

5. The display device according to claim 2, characterized in that: The second color filter is disposed on the first insulating layer.

6. The display device according to claim 5, characterized in that: Also includes: a second insulating layer, which is entirely disposed on the second color filter in a display region including the first emission region and the second emission region; The second insulating layer is opened at a portion adjacent to the first emission region to expose the portion of the first wavelength conversion pattern.

7. The display device according to claim 6, characterized in that: The first color filter is disposed on the second insulating layer.

8. The display device according to claim 1, characterized in that: Also includes: a low refraction pattern disposed on the light emitting element portion in the second emission region and overlapping the first wavelength conversion pattern in a plan view; as well as A third insulating layer covers the low-refractive pattern, is opened at a portion adjacent to the first emission region, and exposes the portion of the first wavelength conversion pattern.

9. The display device according to claim 8, characterized in that: The low-refractive pattern and the third insulating layer are sequentially disposed on the first insulating layer.

10. The display device according to claim 1, characterized in that Also includes: a protective member provided on the base member on which the light emitting element portion is provided; a color filter portion provided on a surface of the protection member facing the light emitting element portion and comprising: a first color filter disposed in the first emission region; and a second color filter disposed in the second emission region; and a second insulating layer, covering the color filter portion, The wavelength conversion portion is provided on a surface of the second insulating layer and faces the light emitting element portion.

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